CN1821853A

CN1821853A - Method of forming inorganic orientation film, inorganic orientation film, substrate for electronic devices, liquid crystal panel, and electronic equipment

Info

Publication number: CN1821853A
Application number: CN 200610004143
Authority: CN
Inventors: 太田英伸
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2005-02-18
Filing date: 2006-02-20
Publication date: 2006-08-23

Abstract

In a method of forming an inorganic orientation film, a target is irradiated with ion beams supplied from an ion beam source to lead out sputter particles from the target, and then the sputter particles are made incident on a matrix to form the inorganic orientation film, wherein the film formation is carried out without replacing the whole of the target while carrying out a repair processing for supplementing or recovering a defect of the target. The target is formed from a plurality of separable members so that only a part of the separable members can be selected and replaced, and the repair processing is carried out by replacing a member within the plural separable members on which the defect is produced. According to this method, it is possible to manufacture an inorganic orientation film which is excellent in an orientation characteristic and also excellent in light resistance while effectively using the target. This saves resources and gives fewer burdens on an environment.

Description

Inorganic alignment film formation method, inorganic alignment film, electronic device substrate, liquid crystal board and electronic equipment

Technical field

The present invention relates to inorganic alignment film formation method, inorganic alignment film, electronic device substrate, liquid crystal board and electronic equipment.

Background technology

Known projection type image display apparatus is a projected image on screen.In this projection type image display apparatus, its image forms main use liquid crystal board.

Such liquid crystal board usually for liquid crystal molecule is orientated, has the alignment films that the tilt angle of the regulation found is set (pretilt) on certain orientation.In order to make these alignment films, known method is the film that is made of macromolecular compounds such as polyimide with film forming on base material, the method (for example, referring to Patent Document 1) of the friction treatment that rubs on a direction with regenerated fiber cloth such as (rayou)

But the film by macromolecular compounds such as polyimide constitute owing to environment for use, service time etc., can produce the light deterioration.If produced such light deterioration, the constituent material of alignment films, liquid crystal layer etc. decomposes, and its decomposition product can bring harmful effect to the performance of liquid crystal etc.Also have a problem to be in addition, produce static or dust in this friction treatment, it can make reliability decrease.

To be purpose in order addressing the above problem, to have attempted adopting the alignment films that constitutes by inorganic material.Usually form inorganic material by oblique side's vapour deposition method, when adopting such method, the vapor deposition source material disperses in chamber and becomes dust, has individual problem to be, and is very remarkable to adhering to of the dust of substrate, perhaps brings remarkable influence for the yield rate of goods.Also considered in addition to wait to form inorganic alignment film, in this case, following problem has been arranged by sputter.That is, though used discoid target, if use this smaller target, then high energy particle (for example, ion beam) bumps against on the target component for fixing etc. of backboard etc., and the composition beyond the constituent material of target is comprised in the alignment films of formation.If such impurity contains morely, then the characteristic of alignment films is brought very big harmful effect.In addition, for example, passing through ion beam irradiation on target, and draw in the ion beam sputtering of sputtering particle, usually be to make concentrated ion beam inject target, even but under the situation of using such ion beam of concentrating (concentrating the high energy particle line), the ion (high energy particle) of a part also can bump against on the target component for fixing etc., can cause above-mentioned problem.To solve such problem is purpose, has considered to use enough targets of big (for example, diameter is more than 20cm), in this case, is difficult to the target that utilizes film forming to use efficiently.Promptly, in ion beam sputtering, though the ions diffusion of a part is injected beyond the purpose zone, but because the major part of ion is injected the zone (purpose zone) of the regulation of target, so employed target of film forming, be consumed near the portion in the central, near the major part circumference can not be utilized by film forming.Because the employed target price general charged of the formation of alignment films is all higher,, not best from viewpoint energy-conservation, production cost so can not effectively utilize the situation of target as described above.

In addition, if the life-span of target (the utilizable amount of film forming is few) is short, then the operator will increase the frequency of the target in the chamber of changing device more, at this moment, must carry out vacuumizing in the chamber, and it becomes the reason that the throughput rate that further makes alignment films descends.In addition, when the replacing of such target, enter that the possibility of foreign matter uprises in the chamber, also bad from the viewpoint of the raising of the quality of the alignment films that forms.

Patent documentation 1: the spy opens flat 10-161133 communique (claims)

Summary of the invention

The objective of the invention is to, provide and not only can effectively utilize target (energy-conservation and give environment the little method of burden), and make the formation method of the inorganic alignment film of the inorganic alignment film that orientation characteristic (function of the state of orientation of control liquid crystal material) is good, photostability is good; Provide by described and form the inorganic alignment film that method obtains; Electronic device substrate, liquid crystal board and electronic equipment with described inorganic alignment film are provided.

Reach such purpose by following the present invention.

The formation method of inorganic alignment film of the present invention is, by drawing sputtering particle from the ion beam irradiation of ion beam source to target, described sputtering particle incided on the base material, forms the method for inorganic alignment film, it is characterized in that,

Need not change described target integral body, replenish or the damaged repair process that recovers described target comes film forming.

Thus, can provide the formation method of inorganic alignment film, it can effectively utilize target (energy-conservation and little to the burden of environment method), and it is good to make orientation characteristic (function of the state of orientation of control liquid crystal material), and the good inorganic alignment film of photostability.

In the formation method of inorganic alignment film of the present invention, as described target, use constitute by a plurality of parts that can cut apart and, can only select to change the target of the part among described a plurality of parts,

Preferably among suitably changing described parts, produce described damaged parts, carry out described repair process.

Thus, the formation method of inorganic alignment film can be provided, and it can effectively utilize target (energy-conservation and littler to the burden of environment method) more, and it is good to make orientation characteristic (function of the state of orientation of control liquid crystal material), and, the inorganic alignment film that photostability is good.

Preferably, in the formation method of inorganic alignment film of the present invention, described target has columned first parts; Surround second parts cylindraceous of the side face configuration of these first parts.

Thus, can further improve the utilization ratio of target.

In the formation method of inorganic alignment film of the present invention, preferably, described first parts are that diameter is the columned parts of 25～250mm.

Thus, can further improve the utilization ratio of target.

In the formation method of inorganic alignment film of the present invention, preferably, be 100～350mm as the diameter of described target integral body.

Thus, can obtain the utilization ratio of sufficiently high target, and can prevent more positively that ion beam is irradiated to target parts in addition.The good especially inorganic alignment film of the characteristic of the inorganic alignment film that can obtain forming consequently.

In the formation method of inorganic alignment film of the present invention, preferably, described repair process makes the position time to time change of described ion beam irradiation on described target.

In the formation method of inorganic alignment film of the present invention, preferably, when the irradiation of described ion beam, described target is relatively moved with respect to described ion beam source and described base material.

In the formation method of inorganic alignment film of the present invention, preferably, the relative moving speed with respect to described ion beam source and described base material of described target is 0.01～40mm/ second.

Thus, can make sputtering particle be deposited in desirable position on the base material, consequently can obtain being orientated the good especially inorganic alignment film of characteristic from desirable angle.

In the formation method of inorganic alignment film of the present invention, preferably, relatively moving of described target is moving back and forth to the one dimension direction.

Thus, can prevent the employed device of the manufacturing of alignment films maximize, complicated, and can effectively utilize target, by the little method of the burden of environment is formed inorganic alignment film.

In the formation method of inorganic alignment film of the present invention, preferably, the length on the face of described ion beam incident one side, described moving direction of described target is longer than the length of its vertical direction.

In the formation method of inorganic alignment film of the present invention, preferably, the accelerating potential of the described ion beam when shining described ion beam is more than 1200V.

Thus, can make sputtering particle be deposited in desirable position on the base material, consequently can obtain being orientated the good especially inorganic alignment film of characteristic from desirable angle.In addition, be made of column crystallization under the situation of inorganic alignment film, near the shape in top that can control this column crystallization becomes the shape that can more suitably make the liquid crystal material orientation, consequently can more positively control tilt angle.

In the formation method of inorganic alignment film of the present invention, preferably, the ion beam current of irradiated described ion beam is 50～500mA.

In the formation method of inorganic alignment film of the present invention, preferably, make described sputtering particle, from the tilt angle θ of regulation of the vertical direction with respect to the face of the described inorganic alignment film of formation of described base material _sDirection, incide on the described base material,

On described base material, the main column crystallization that is made of inorganic material forms the described inorganic alignment film of orientation under the state that the face direction for the face of the described inorganic alignment film of formation of described base material tilts.

Thus, tilt angle can be more positively controlled, the good especially inorganic alignment film of characteristic (function of the state of orientation of control liquid crystal material) can be obtained being orientated.

In the formation method of inorganic alignment film of the present invention, preferably, the angle θ of described regulation _sMore than 40 °.

Thus, can control near the shape the top of the column crystallization that constitutes inorganic alignment film, become and to make liquid crystal material stable more and the shape of orientation consequently can obtain being orientated the better inorganic alignment film of characteristic.

In the formation method of inorganic alignment film of the present invention, preferably,, control near the shape in top of the crystallization of described column by the energy and/or the quantity of the described sputtering particle on the described base material of control arrival.

In the formation method of inorganic alignment film of the present invention, preferably, the crystallization of described column is at the angle θ of the regulation that tilts with respect to described base material _cThe following orientation of state.

Thus, suitable tilt angle can be found, the state of orientation of liquid crystal material can be more suitably controlled.

In the formation method of inorganic alignment film of the present invention, preferably, described inorganic material is made of silica type.

Inorganic alignment film of the present invention is characterised in that, the formation method by inorganic alignment film of the present invention forms.

Thus, can provide orientation characteristic (function of the state of orientation of control liquid crystal material) good, and, the inorganic alignment film that photostability is good.

In inorganic alignment film of the present invention, preferably, the average thickness of inorganic alignment film is 0.02～0.3 μ m.

Thus, the tilt angle of appropriateness more can be found, the state of orientation of liquid crystal material can be more suitably controlled.

Electronic device substrate of the present invention is characterised in that to have electrode and inorganic alignment film of the present invention on substrate.

Thus, can provide orientation characteristic (function of the state of orientation of control liquid crystal material) good, and, photostability good electron equipment substrate.

Liquid crystal board of the present invention is characterised in that to have inorganic alignment film of the present invention and liquid crystal layer.

Thus, can provide orientation characteristic (function of the state of orientation of control liquid crystal material) good, and, the liquid crystal board that photostability is good.

Electronic equipment of the present invention is characterised in that to have liquid crystal board of the present invention.

Thus, can provide reliability high electronic equipment.

Description of drawings

Fig. 1 is the longitudinal section of pattern of first embodiment of expression liquid crystal board of the present invention.

Fig. 2 is the longitudinal section of the inorganic alignment film that formed by method of the present invention of expression.

Fig. 3 is the mode chart of the employed inorganic alignment membrane formation device of formation method of the inorganic alignment film of expression first embodiment of the present invention.

Fig. 4 is the stereographic map that is used to represent the shape of target.

Fig. 5 is the stereographic map that is used to represent the shape of target.

Fig. 6 is the mode chart of the employed inorganic alignment membrane formation device of formation method of the inorganic alignment film of second embodiment of the present invention.

Fig. 7 is the synoptic diagram that is used to represent the moving direction of the shape of target and target.

Fig. 8 is the longitudinal section of pattern of second embodiment of expression liquid crystal board of the present invention.

Fig. 9 is the stereographic map of structure of the PC of the expression mobile model (or notebook type) that uses electronic equipment of the present invention.

Figure 10 is the stereographic map of the structure of the expression mobile phone (containing PHS) that uses electronic equipment of the present invention.

Figure 11 is the stereographic map of the structure of the expression digital still camera that uses electronic equipment of the present invention.

Figure 12 is the synoptic diagram of the optical system of the pattern ground expression projection type image display apparatus that uses electronic equipment of the present invention.

Figure 13 is the stereographic map that is used to represent the shape of target.

Figure 14 is the stereographic map that is used to represent the shape of target.

Among the figure: 1A, the 1B-liquid crystal board, 2-liquid crystal layer, 3A, the 3B-inorganic alignment film, 4A, the 4B-inorganic alignment film, 5-nesa coating, 6-nesa coating, 7A, the 7B-light polarizing film, 8A, the 8B-light polarizing film, 9-substrate, 10-substrate, the 100-base material, the 101-base material, 200-electronic device substrate, 500-target, 510-first parts, 520-second parts, 530-the 3rd parts, S1-ion gun, the S11-filament, the S12-extraction electrode, S13-gas supply source, S100-is orientated membrane formation device, the S3-vacuum chamber, the S4-off-gas pump, S5-base material fixed mount, S6-target holding member (backboard), the S7-moving-member, 11-micro lens substrate, the 111-band micro lens substrate of recess, 112-recess, the 113-micro lens, the 114-top layer, 115-resin bed, 12-liquid crystal board counter substrate, 13-deceives matrix, the 131-opening, 14-nesa coating, 17-TFT substrate, the 171-glass substrate, the 172-pixel electrode, 173-thin film transistor (TFT), 1100-PC, the 1102-keyboard, the 1104-main part, 1106-display unit, 1200-mobile phone, the 1202-action button, obedient mouthful of 1204-, the 1206-mouth of talk, 1300-digital still camera, 1302-casing (body), the 1304-light receiving unit, 1306-shutter release button, 1308-circuit substrate, the 1312-video signal output terminal, the input and output terminal that the 1314-data communication is used, 1430-TV monitor, 1440-PC, the 300-projection type image display apparatus, the 301-light source, 302, the 303-compound lens, 304,306, the 309-catoptron, 305,307, the 308-dichronic mirror, 310～314-collector lens, 320-screen, the 20-optical module, the 21-colour splitting prism, 211,212-dichronic mirror one side, 213～215-face, the 216-exit facet, the 22-projection lens, 23-display unit, 24～26-liquid crystal light valve.

Embodiment

Below, with reference to the accompanying drawings, preferred embodiment be elaborated for of the present invention.

At first, before the formation method of explanation inorganic alignment film, describe for first embodiment of liquid crystal board of the present invention with alignment films of the present invention.

Fig. 1 is the longitudinal section of pattern of first embodiment of expression liquid crystal board of the present invention, the longitudinal section of Fig. 2 inorganic alignment film that to be expression formed by method of the present invention.

As shown in Figure 1, liquid crystal board 1A has: liquid crystal layer 2; Inorganic alignment film 3A, 4A;

Nesa coating

5,6; Light polarizing film 7A, 8A; And substrate 9,10.

Liquid crystal layer 2 mainly is made of liquid crystal material.

As the liquid crystal material that constitutes liquid crystal layer 2, so long as can be orientated to nematic liquid crystal, getting final product of disc-like liquid crystal etc., can use liquid crystal material arbitrarily, but under the situation of TN type liquid crystal board, preferably form nematic liquid crystal, for example, can enumerate: cyclohexylbenzene derivant liquid crystal, the biphenyl derivatives liquid crystal, xenyl cyclohexane derivant liquid crystal, terphenyl derivant liquid crystal, phenyl ether derivant liquid crystal, the phenyl ester derivatives liquid crystal, bicyclohexane derivant liquid crystal, azomethine derivant liquid crystal, azoxy derivant liquid crystal, the pyrimidine derivatives liquid crystal, the dioxane derivative liquid crystal, cubane derivant liquid crystal.And, in these nematic liquid crystal molecules, also contain the substituent liquid crystal molecule of fluorine class that has imported single fluorine-based, two fluorine-based, three fluorine-based, trifluoromethyl, trifluoromethoxy, two fluorine methoxyls etc.

Dispose inorganic alignment film 3A, 4A on the two sides of liquid crystal layer 2.

In addition, inorganic alignment film 3A is formed on the base material 100 that is made of nesa coating 5 and substrate 9 described later, and inorganic alignment film 4A is formed on the base material 101 that is made of nesa coating 6 and substrate 10 described later.

Inorganic alignment film 3A, 4A have the function of (when not applying voltage) state of orientation that control constitutes the liquid crystal material (liquid crystal molecule) of liquid crystal layer 2.

For example, form such inorganic alignment film 3A, 4A by method described later (the formation method of the inorganic alignment film that this law is bright), as shown in Figure 2, for the face direction of the face of the formation inorganic alignment film of base material 100, the angle θ that tilts to stipulate to the direction of regulation (necessarily) _cState under, the crystallization of column is arranged and is constituted.Especially, in the present embodiment, near the shape in top that constitutes the column crystallization of inorganic alignment film 3A, 4A becomes can make liquid crystal material stablize and the shape of orientation.

In the present embodiment, as shown in Figure 2, near the top of column crystallization, each column crystallization that constitutes inorganic alignment film 3A, 4A is more smooth, and, have the face angulation θ of the formation inorganic alignment film of itself and base material 100 _c' than the tiltangle of column crystallization _cLittle position.If form such structure, owing under stable status, liquid crystal molecule is configured in the more smooth position of each column crystallization respectively, so can find suitable tilt angle, the erecting of the liquid crystal molecule when more suitably deboost applies.

Column crystallization is with respect to the cant angle theta of base material 100 _cPreferably 30～60 °, more preferably 40～50 °.Thus, more suitable tilt angle can be found, the state of orientation of liquid crystal molecule can be more suitably controlled.

In addition, the width W of the crystallization of such column is 10～40nm preferably, more preferably 10～20nm.Thus, more suitable tilt angle can be found, the state of orientation of liquid crystal molecule can be more suitably controlled.

Inorganic alignment film 3A, 4A are made of inorganic material.Usually, compare with organic material because inorganic material has good chemical stability, with the alignment films that constitutes by existing such organic material to than, have good photostability especially.

In addition, as shown in Figure 2, the inorganic material that constitutes inorganic alignment film 3A, 4A preferably can column ground crystallization.Thus, can more easily control (when no-voltage applies) state of orientation (tilt angle) of the liquid crystal molecule that constitutes liquid crystal layer 2.

As above-mentioned such inorganic material, can use, for example SiO ₂Or silica type (oxide of silicon), Al such as SiO ₂O ₃Etc. Zinc-oxide-based (oxide of zinc), various metal oxides such as MgO, ITO such as alumina type (oxide of aluminium), ZnO.Wherein, the particularly preferred monox that is to use.Thus, the liquid crystal board that obtains has better photostability.

Such inorganic alignment film 3A, 4A, its preferred average thickness are 0.02～0.3 μ m, more preferably 0.02～0.08 μ m.If average thickness does not reach described lower limit, the tilt angle that then is difficult to make each position sometimes is homogeneous fully.On the other hand, if average thickness has surpassed described higher limit, then driving voltage uprises, and has consumed power to become big possibility.

Disposed nesa coating 5 in the outside surface side of inorganic alignment film 3A (face side of the face opposition side relative) with liquid crystal layer 2.Similarly, disposed nesa coating 6 in the outside surface side of inorganic alignment film 4A (face side of the face opposition side relative) with liquid crystal layer 2.

Nesa coating

5,6 by switching on, has the function of the liquid crystal molecule of driving (orientation is changed) liquid crystal layer 2 between it.

Control in the energising of 5,6 of nesa coatings is to be undertaken by the electric current that control provides from the control circuit (not shown) that links to each other with nesa coating.

Nesa coating

5,6 has electric conductivity, by for example, and indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂) wait formation.

On the outside surface side (face side of the face opposition side relative) of nesa coating 5, disposed substrate 9 with inorganic alignment film 3A.Similarly, on the outside surface side (face side of the face opposition side relative) of nesa coating 6, disposed substrate 10 with inorganic alignment film 4A.

Substrate 9,10 has the described liquid crystal layer 2 of support; Inorganic alignment film 3A, 4A;

Nesa coating

5,6; And the function of light polarizing film 7A described later, 8A.The constituent material of substrate 9,10 is restriction especially, for example, can enumerate plastic materials such as glass such as quartz glass or polyethylene terephthalate etc.Wherein, particularly preferably be by glass such as quartz glasss and constitute.Thus, can obtain being difficult to bending, the better liquid crystal board of stability.And, in Fig. 1, omitted the record of encapsulant, wiring etc.

On the outside surface side of substrate 9 (face side of the face opposition side relative), disposed light polarizing film 7A with nesa coating 5.Similarly, on the outside surface side of substrate 10 (face side of the face opposition side relative), disposed light polarizing film 8A with nesa coating 6.

As the constituent material of light polarizing film 7A, 8A, can enumerate, for example polyvinyl alcohol (PVA) (PVA) etc.In addition, can use also that doping iodine is used as light polarizing film in described material.

For example, the film that is made of described material can be extended on a direction of principal axis and be used as light polarizing film.

By being configured to such light polarizing film 7A, 8A, can more positively utilize the adjusting of energising amount to carry out the control of optical transmission rate.

Usually, decide the direction of the polarizing axis of light polarizing film 7A, 8A corresponding to the direction of orientation of inorganic alignment film 3A, 4A.

And, in the present embodiment,, be illustrated for as shown in Figure 2 structure, but be not limited to this as inorganic alignment film, so long as liquid crystal molecule is stable and have the shape of orientation, can be shape arbitrarily.

Then, describe for the formation method of inorganic alignment film of the present invention and the employed orientation membrane formation device of formation of inorganic alignment film of the present invention.

At first, first embodiment for the formation method of alignment films of the present invention describes.

Fig. 3 is the mode chart of the employed inorganic alignment membrane formation device of formation method of the inorganic alignment film of expression first embodiment of the present invention, Fig. 4, Fig. 5 be used to represent to use in the present embodiment the stereographic map of shape of target.

At first, describe for the orientation membrane formation device that uses in the present embodiment.

Orientation membrane formation device S100 shown in Figure 3 has: the off-gas pump S4 of the pressure in ion gun (ion beam source) S1, the vacuum chamber S3 of irradiation ion beam, the control vacuum chamber S3, the base material that will form inorganic alignment film are fixed on base material fixed mount S5 in the vacuum chamber S3, and the target holding member S6 (backboard) of maintenance target 500.

Ion gun S1 portion within it has filament S11 and extraction electrode S12.In addition, in ion gun S1, provide the gas of gas supply source S13 having connected on the ion gun S1.

In addition, usually, constitute target holding member S6 by the heat conductivity good metal material of stainless steel, copper, aldary etc.When inorganic alignment film formed, the bonding agent by In etc. was fixed on target 500 on the target holding member S6.

Then, use the such orientation membrane formation device of illustrated structure, describe for the formation method of the inorganic alignment film of first embodiment of the present invention.Below, representative ground describes for the situation that forms inorganic alignment film 3A.

＜1〉at first, on the target holding member S6 in vacuum chamber S3 target 500 is set.Can suitably select to constitute the material of target 500 by the material that forms inorganic alignment film 3A, for example, form by SiO ₂Under the situation of the inorganic alignment film that constitutes, can suitably use by SiO ₂The target 500 that constitutes in addition, under the situation that forms the inorganic alignment film that is made of SiO, can suitably use the target 500 that is made of SiO.And as shown in Figure 4, target 500 is by first parts 510 of cylindric (discoid), constitute with second parts 520 cylindraceous.These parts (first parts 510 and second parts 520) closely contact with the inner peripheral surface of second parts 520 at the side face (side face of cylinder) of first parts 510, but can cut apart as required.And, be described in detail afterwards for target 500.

＜2〉then, on the base material fixed mount S5 in vacuum chamber S3 base material 100 is set.

＜3〉then, by off-gas pump S4 to reducing pressure in the vacuum chamber S3.

＜4〉then, in ion gun S1, provide gas by gas supply source S13.

＜5〉then, filament S11 is being applied voltage, producing thermoelectron by the power supply (not shown).Thermoelectron of Chan Shenging and the gas collisions that is imported in the ion gun S1 like this.Thus, gas ionization produces plasma.Under this state, by extraction electrode S12 is applied ion accelerating voltage, speeding-up ion shines to target 500 as ion beam.

From being drawn sputtering particle, this sputtering particle is injected on the base material 100, and makes its accumulation by the target 500 of ion beam irradiation.

Then, carry out irradiation, the accumulation of sputtering particle on base material 100, obtain on base material 100, forming the substrate (electronic device substrate of the present invention (electronic device substrate 200)) of inorganic alignment film 3A by the irradiation that continues the particle beams as described above.

But, by carrying out the irradiation of the ion beam to target as described above,, carrying out repeatedly under the situation of film forming owing to the thickness of target diminishes in time, need to change target.

Usually, in ion beam sputtering, in order to prevent ion beam irradiation to target parts in addition, (near the center of circle) is target irradiation ion beam near the center with target.Therefore, in the prior art, have individual problem to be, target selectively consumes near its center, almost is not consumed near the peripheral part and left behind.In other words, can not effectively utilize target, the unavailable part of film forming much all left behind, and is not best from viewpoint energy-conservation, production cost.In addition to prevent that producing problem as described above is purpose, and use under the situation of smaller target, ion beam also can bump against the holding member that is used to keep target, produces the problem in the alignment films that composition beyond the constituent material of target is comprised in formation.

To this, in the present invention, it is characterized in that changing target integral body, replenish or the damaged repair process that recovers target comes film forming.Thus, the generation of the inconvenience that the parts beyond the target cause can be prevented to bump against fully, and the utilization ratio of target can be improved owing to ion beam.

Especially, in the illustrated structure of present embodiment, use be the target 500 that constitutes by first parts 510 that can cut apart where necessary and second parts 520.That is,, constitute by a plurality of parts that can cut apart as target, and, by using the target that can only select to change the part in the described a plurality of parts, suitably change the damaged target that produces owing to ion beam in described parts, carry out repair process.Thus, the generation of the inconvenience that the parts beyond the target 500 cause can be prevented to bump against fully, and the utilization ratio of target 500 can be improved owing to ion beam.

In other words, because the ion particle that constitutes ion beam is with very high probability, bump constitutes near first parts 510 of center of target 500, so on first parts 510, can selectively carry out the consumption of target 500, on the other hand, by second parts 520 that the periphery of surrounding first parts 510 disposes, can prevent effectively that ion beam (constituting the ion particle of ion beam) from shining target 500 parts in addition.Therefore, under the situation of the formation (film forming) of carrying out alignment films repeatedly, only replace first parts 510 of the consumption of carrying out film forming, can utilize to former state second parts 520, consequently, can improve utilization ratio as target 500 integral body.

The diameter of first parts 510 is 25～250mm preferably, more preferably 50～100mm, most preferably 55～75mm.Thus, can improve the selectivity of ion beam especially, consequently can further improve the utilization ratio of target 500 to 510 irradiations of first parts.To this, if the diameter of first parts 510 does not reach described lower limit, the probability that then constitutes ion particle hits second parts 520 of ion beam uprises.Consequently the replacing frequency of second parts 520 (for the ratio of the replacing frequency of second parts 520 of the replacing frequency of first parts 510) also uprises.Demonstrate tendency as the decline of the utilization ratio of target 500 integral body.On the other hand, if the diameter of first parts 510 has surpassed described higher limit, then in first parts 510 film forming the ratio of unavailable part increase the possibility that consequently has the utilization ratio as target 500 integral body to descend.

In addition, as the diameter (external diameters of second parts 520) of target 500 integral body preferably 100～350mm, more preferably 110～310mm, further preferably 120～300mm.Can fully improve the utilization ratio of target 500 thus, and can more positively prevent the parts of ion beam irradiation beyond the target 500, consequently can make the characteristic of inorganic alignment film of formation good especially.To this,, then have to be difficult to fully prevent the possibility of ion beam irradiation to target 500 parts in addition if do not reach described lower limit as the diameter of target 500 integral body.On the other hand, if surpassed described higher limit as the diameter of target 500 integral body, then film forming does not have the ratio of the part of utilization to increase on target 500, and the possibility as the utilization ratio decline of target 500 integral body is consequently arranged.

And, in the above description, illustrated that target 500 is situations about being made of first parts 510 and second parts 520, but target 500 also can be by the parts more than three (first parts, second parts, the 3rd parts ...) constitute.For example, as shown in Figure 5, target 500 can be three parts (is first parts 510, second parts 520, the 3rd parts 530 from central side) that are configured to concentric circles.Thus, can further improve utilization ratio as target 500 integral body.Promptly, can make the bump probability of the ion particle that constitutes ion beam, reduce by the order of first parts 510, second parts 520, the 3rd parts 530, even when needs are changed second parts 520, can change the 3rd parts 530 etc., can utilize on former state ground.Like this, under the situation that target 500 is made of the parts more than three, the diameter of each parts (external diameter) can be littler than described.

In addition, when ion beam irradiation, preferably set the angle that is provided with of base material fixed mount S5, make: the sputtering particle that produces by target 500, for the vertical direction of the face of the formation inorganic alignment film 3A of base material 100, from the angle θ of the regulation that tilts _sDirection be injected on the base material 100.Thus, for the face direction of the face of the formation inorganic alignment film of base material, can make mainly the crystallization of the column that constitutes by inorganic material under the state that tilts, form the inorganic alignment film that is orientated.Consequently can more positively control the tilt angle of inorganic alignment film, can obtain the good especially inorganic alignment film of orientation characteristic (function of the state of orientation of control liquid crystal material) of inorganic alignment film.

Angle θ _sPreferably more than 40 °, more preferably more than 45 °, further preferably at 50～87 °, most preferably at 70～87 °.Thus, near the top of the column crystallization that constitutes inorganic alignment film 3A shape is become can make the liquid crystal molecule shape of stable orientations more, the function of the state of orientation of the inorganic alignment film 3A that consequently obtains control liquid crystal molecule is better.To this, if angle θ _sToo small, just can not get enough tilt angles, the possibility of the function of the state of orientation of controlled liquid crystal molecule is fully arranged.On the other hand, if angle θ _sExcessive, then be difficult to make the sputtering particle of drawing from target 500 positively attached on the base material 100, consequently might produce the problem that the compactedness of base material 100 and inorganic alignment film 3A descends.

In addition, the inventor finds, when film forming as described above, arrives the energy and/or the quantity of the sputtering particle of base material, the more suitably orientation of inorganic alignment film by control.If illustrate in greater detail, then arrive the energy and/or the quantity of the sputtering particle of base material by control, near the top of the column crystallization that constitutes inorganic alignment film 3A shape is become to make the liquid crystal material shape of stable orientations more, consequently can obtain the better inorganic alignment film of orientation characteristic of inorganic alignment film.

And, in following such condition (1) and (2), preferably satisfy a condition at least, more preferably satisfy two conditions simultaneously.

(1) is applied to the accelerating potential of the ion beam on the extraction electrode S12 more than 1200V.

(2) ion beam current of irradiated ion beam is 50～500mA.

In such condition (1) and (2), by satisfying at least one condition, near the top of the column crystallization that constitutes inorganic alignment film shape is become to make the liquid crystal molecule shape of stable orientations more, consequently can more positively control tilt angle.

Especially, by satisfying described condition (1) and (2) simultaneously, can make described effect more remarkable.

The accelerating potential of ion beam is preferably as mentioned above more than 1200V, but more preferably more than 1400V.If accelerating potential does not reach described lower limit, then be difficult to more positively control near the shape in top of column crystallization sometimes.

The electric current of ion beam is preferably as mentioned above at 50～500mA, but more preferably at 200～500mA.Thus, can more positively control near the shape in top of column crystallization, and can make ion beam irradiation (improve the selectivity of the irradiation position of ion beam), can further improve the utilization ratio of target at the position that becomes purpose.To this, if ion beam current does not reach described lower limit, sputtering raste reduces, and can not obtain enough throughput rate sometimes.On the other hand, if ion beam current has surpassed described higher limit, the tendency that produces deviation on the orientation of liquid crystal molecule is arranged then.

Usually, if under defined terms, make the sputtering particle oblique incidence to base material, the column crystallization that tilts in the corresponding direction of incident angle (illumination angle) with sputtering particle is grown up, can make inorganic alignment film integral body become alignment films, but the possibility that produces deviation on the orientation of liquid crystal molecule is also arranged with orientation.But, if satisfy above-mentioned condition, near the top of the column crystallization that constitutes inorganic alignment film 3A shape control is become can make the liquid crystal molecule shape of stable orientations more, consequently can more positively control tilt angle.

In addition, the pressure in the vacuum chamber S3, that is, the pressure of the gaseous environment when forming inorganic alignment film 3A is preferably 5.0 * 10 ^-2Below the Pa, more preferably 1.0 * 10 ^-2Below the Pa.Thus, can form the liquid crystal molecule inorganic alignment film 3A of stable orientations more.To this, if the hypertonia in the vacuum chamber S3, then the rectilinear propagation of sputtering particle descends sometimes, and the possibility that can not fully form column crystallization is consequently arranged.In addition, also have the orientation of crystallization not have the fully possibility of alignment.

The gas that is provided in the ion gun S1 by gas supply source S13 does not limit especially, but preferably inert gas, more preferably argon gas.Thus, can improve the formation speed (sputtering raste) of inorganic alignment film 3A.

The preferably lower temperature of temperature of the base material 100 when forming inorganic alignment film 3A.Specifically the temperature of base material 100 is preferably below 150 ℃, more preferably below 80 ℃, further preferably at 20～50 ℃.Thus, can suppress the phenomenon that moves from the position of adhering at first attached to the sputtering particle on the base material 100, promptly Qian Yi phenomenon can form the liquid crystal molecule inorganic alignment film 3A of stable orientations more.And the temperature of the base material 100 when forming inorganic alignment film 3A can also can be cooled off in above-mentioned scope as required.

The formation speed (film forming speed) of inorganic alignment film 3A does not limit especially, but preferably at 1～15nm/ branch, more preferably at 6～10nm/ branch.Thus, can not damage the orientation of the inorganic alignment film that obtains, can form inorganic alignment film more efficiently.

More than, be illustrated for the situation that forms inorganic alignment film 3A, but also can similarly form inorganic alignment film 4A.

Then, second embodiment for the formation method of alignment films of the present invention describes.

Fig. 6 is the mode chart of the employed inorganic alignment membrane formation device of formation method of the inorganic alignment film of second embodiment of the present invention, and Fig. 7 is the synoptic diagram that is used to represent the moving direction of the shape of target and target.

Orientation membrane formation device S100 shown in Figure 6 has: the off-gas pump S4 of the pressure in ion gun (ion beam source) S1, the vacuum chamber S3 of irradiation ion beam, the control vacuum chamber S3, the base material that will form inorganic alignment film are fixed on base material fixed mount S5 in the vacuum chamber S3, keep target holding member (backboard) S6 of target 500, reach the moving-member S7 that target 500 is moved with target holding member S6.

In addition, usually, constitute target holding member S6 by the heat conductivity good metal material of stainless steel, copper, aldary etc.When inorganic alignment film formed, the bonding agent by In etc. was fixed on target 500 on the target holding member S6.And, can move this target holding member S6 by moving-member S7.Thus, target 500 also can together move with target holding member S6.In other words, formed and to have made the time dependent structure in the position of ion beam irradiation on target 500.Further in other words, formed: by moving-member S7, the structure that target 500 can be relatively moved for ion gun S1 and base material.

Then, utilize to have the such orientation membrane formation device of illustrated structure, describe for the formation method of the inorganic alignment film of second embodiment of the present invention.Below, representative ground describes for the situation that forms inorganic alignment film 3A.

＜1〉at first, on the target holding member S6 in vacuum chamber S3 target 500 is set.Can suitably select to constitute the material of target 500 by the material that forms inorganic alignment film 3A, for example, form by SiO ₂Under the situation of the inorganic alignment film that constitutes, can suitably use by SiO ₂The target 500 that constitutes in addition, under the situation that forms the inorganic alignment film that is made of SiO, can suitably use the target 500 that is made of SiO.

＜3〉then, by off-gas pump S4 to reducing pressure in the vacuum chamber S3.

＜4〉then, in ion gun S1, providing gas by gas supply source S13.

At this moment, by moving-member S7, target holding member S6 is moved.Thus, can make the position time to time change of ion beam irradiation on target 500.In other words, with target holding member S6 together target 500 also move, concern time to time change (with reference to figure 7) for the relative position of ion gun S1 and base material 100.

Like this, in the present embodiment, by make target 500 for ion gun S1 and base material 100 to moving, and the irradiation ion beam carries out repair process.Thus, can make ion beam incident position time to time change on the target 500.Can prevent that consequently target 500 from consuming partly, can not waste and effectively utilize target 500.In addition, because can effectively utilize target 500, so can be by energy-conservation and the little method of the burden of environment formed inorganic alignment film.In addition, owing to can effectively utilize target 500, can reduce the replacing frequency of target 500, also can prevent from effectively to be accompanied by the replacing of target and the problem that produces.

As shown in Figure 7, in the present embodiment, use the target 500 of shape with minor coin, target 500 relatively move be to the moving back and forth of the roughly the same one dimension direction of the long axis direction of target 500.Thus, the maximization, complicated of the structure of membrane formation device can be prevented to be orientated, target 500 can be fully effectively utilized.

The translational speed of target 500 (with the relative moving speed of ion gun S1 and base material 100) is 0.01～40mm/ second preferably, 3～35mm/ second more preferably, further preferably 3～30mm/ second.If the translational speed of target 500 does not reach described lower limit,, just can not bring into play the effect that target 500 is relatively moved for ion gun S1 and base material 100 fully then according to the illuminate condition of ion beam etc.In addition, according to illuminate condition of ion beam etc., the heading potentially unstable of the sputtering particle of drawing from target 500 might be difficult to obtain the inorganic alignment film that the crystallization by column described later constitutes.On the other hand, if the translational speed of target 500 has surpassed described higher limit, then according to illuminate condition of ion beam etc., the heading potentially unstable of the sputtering particle of drawing from target 500 might be difficult to obtain the inorganic alignment film that the crystallization by column described later constitutes.

Then, the irradiation of the mobile continuation ion beam by being accompanied by above-mentioned target 500, carry out incident, the accumulation of sputtering particle on base material 100, obtain on base material 100, forming the substrate (electronic device substrate of the present invention (electronic device substrate 200)) of inorganic alignment film 3A.

(2) ion beam current of irradiated ion beam is 50～500mA.

The electric current of ion beam is preferably as mentioned above at 50～500mA, but more preferably at 200～500mA.If ion beam current does not reach described lower limit, sputtering raste reduces, and can not obtain enough throughput rate sometimes.On the other hand, if ion beam current has surpassed described higher limit, the tendency that produces deviation on the orientation of liquid crystal molecule is arranged then.

Then, second embodiment for liquid crystal board of the present invention describes.

Fig. 8 is the longitudinal section of pattern of second embodiment of expression liquid crystal board of the present invention.Below, for liquid crystal board 1B shown in Figure 8, be that the center illustrates with difference with described first embodiment, omit its explanation for identical item.

As shown in Figure 8, liquid crystal board (TFT liquid crystal board) 1B has: TFT substrate (liquid crystal drive substrate) 17; The inorganic alignment film 3B that engages with TFT substrate 17; Liquid crystal board counter substrate 12; The inorganic alignment film 4B that engages with counter substrate 12 with liquid crystal board; Enclosed the liquid crystal layer 2 that constitutes by liquid crystal in the space of inorganic alignment film 3B and inorganic alignment film 4B; The light polarizing film 7B that engages with the outside surface side (face side of the face opposition side relative) of TFT substrate (liquid crystal drive substrate) 17 with inorganic alignment film 4B; And the light polarizing film 8B that engages with the outside surface side (face side of the face opposition side relative) of counter substrate 12 with liquid crystal board with inorganic alignment film 4B.

Inorganic alignment film

3B, 4B are by forming with described inorganic alignment film 3A, method that 4A is identical (inorganic alignment film of the present invention form method), and light

polarizing film

7B, 8B are identical with described light polarizing film 7A, 8A.

Liquid crystal board has with counter substrate 12: micro lens substrate 11; The black matrix 13 of opening 131 that has been set at formation on the top layer 114 of this micro lens substrate 11; And the nesa coating (common electrode) 14 that black matrix 13 ground of covering are provided with on top layer 114.

Micro lens substrate 11 has: the band micro lens substrate (first substrate) 111 of recess that is provided with the recess (micro lens recess) 112 of a plurality of (majorities) with concave curved surface; Be engaged with by resin bed (adhesive phase) 115 and be provided with this band micro lens with the top layer (second substrate) 114 on the face of the recess 112 of the substrate 111 of recess, in addition, in resin bed 115, formed micro lens 113 by the resin that is filled in the recess 112.

Make the substrate 111 of band micro lens by flat mother metal (transparency carrier), formed the recess 112 of a plurality of (majorities) on its surface with recess.For example, can use mask, wait by dry ecthing method, wet etch method to form recess 112.

This band micro lens is with the substrate 111 of recess, for example, waits with glass to constitute.

The thermal expansivity of described mother metal preferably with the thermal expansivity of glass substrate 171 (for example the ratio of both thermal expansivity is about 1/10～10) about equally.Thus, in the liquid crystal board that obtains, prevent when temperature variation, owing to different warpage, the bendings that produce of both thermal expansivity, come off etc.

From this viewpoint, preferably constitute the substrate 111 and glass substrate 171 of band micro lens usefulness recess by the material of identical type.Thus, can prevent the difference of the thermal expansivity when temperature variation effectively and the warpage, the bending that produce, come off etc.

Especially, under the situation of the TFT liquid crystal board that micro lens substrate 11 is used for high temperature polysilicon, preferably constitute the substrate 111 of band micro lens with recess by quartz glass.The TFT liquid crystal board has the TFT substrate as liquid crystal drive substrate.To this TFT substrate, the quartz glass that the environmental characteristics when preferably using according to manufacturing is difficult to change.Therefore, corresponding with it, by constitute the substrate 111 of band micro lens with quartz glass, can obtain being difficult to produce the TFT liquid crystal board that has good stability of warpage, bending etc. with recess.

Be provided with the resin bed (adhesive phase) 115 of covering recess 112 with the upper surface of the substrate 111 of recess at the band micro lens.

In the inside of recess 112,, form micro lens 113 by the constituent material of potting resin layer 115.

For example, can pass through than the resin (bonding agent) of band micro lens with the also high refractive index of the refractive index of the constituent material of the substrate 111 of recess, constitute resin bed 115, for example, can by acrylic resin, epikote, the ultraviolet hardening resin of acrylic acid epoxy class waits suitably and constitutes.

Upper surface at resin bed 115 is provided with flat top layer 114.

Top layer (glassy layer) 114 can for example be made of glass.In this case, the thermal expansivity on top layer 114 preferably with the band micro lens with the thermal expansivity of the substrate 111 of recess (for example the ratio of both thermal expansivity is about 1/10～10) about equally.Thus, prevent owing to the band micro lens with the different warpages that produce, the bending of the substrate 111 of recess and the thermal expansivity on top layer 114, come off etc.If constitute the substrate 111 and top layer 114 of band micro lens with same material, can more effectively obtain such effect with recess.

Be used under the situation of liquid crystal board at the substrate 111 of band micro lens with recess, from obtaining the viewpoint of necessary optical characteristics, the thickness on top layer 114 is usually about 5～1000 μ m, more preferably about 10～150 μ m.

And top layer (barrier layer) 114 also can be made of for example pottery.And, as pottery, can enumerate: for example, nitride-based ceramic Al such as AlN, SiN, TiN, BN ₂O ₃, TiO ₂Deng oxide-based ceramic WC, TiC, the carbon compound pottery of ZrC, TaC etc. etc.Be made of pottery under the situation on top layer 114, the thickness on top layer 114 does not limit especially, but preferably about 20nm～20 μ m, more preferably about 40nm～1 μ m.

And can omit such top layer 114 as required.

Black matrix 13 has shade function, is made of the resin that has disperseed for example metal, carbon or titaniums etc. such as Cr, Al, Al alloy, Ni, Zn, Ti etc.

Nesa coating 14 has electric conductivity, by for example indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂) wait formation.

TFT substrate 17 is the substrates that drive the liquid crystal of liquid crystal layer 2, has: glass substrate 171; Be set on this glass substrate 171 and be aligned to the pixel electrode 172 of a plurality of (majorities) of rectangular (ranks shape); Thin film transistor (TFT) (TFT) 173 with each pixel electrode 172 corresponding a plurality of (majorities).And, in Fig. 8, omitted the record of encapsulant, wiring etc.

According to described reason, preferably constitute glass substrate 171 with quartz glass.

Pixel electrode 172 by and nesa coating (common electrode) 14 between discharge and recharge the liquid crystal that drives liquid crystal layer 2.By for example constituting this pixel electrode 172 with described nesa coating 14 identical materials.

Thin film transistor (TFT) 173 be connected with near corresponding pixel electrode 172 on.In addition, thin film transistor (TFT) 173 is connected on the not shown control circuit, the electric current that control provides to pixel electrode 172.Thus, control pixel electrode 172 discharges and recharges.

Inorganic alignment film 3B engages with the pixel electrode 172 of TFT substrate 17, and inorganic alignment film 4B engages with the nesa coating 14 of liquid crystal board with counter substrate 12.

Constituting liquid crystal layer 2 by liquid crystal material (liquid crystal molecule), with the discharging and recharging of counter substrate pixel electrode 172, this liquid crystal molecule, is that the orientation of liquid crystal changes corresponding to liquid crystal board.

In such liquid crystal board 1B, usually, a micro lens 113; An opening 131 with the corresponding black matrix 13 of optical axis Q of this micro lens 113; A pixel electrode 172; And a thin film transistor (TFT) 173 that is connected with this pixel electrode 172, corresponding with a pixel.

Use the substrate 111 of recess through the band micro lens with the incident light L of counter substrate 12 side incidents from liquid crystal board, when seeing through micro lens 113,, and see through opening 131, nesa coating 14, liquid crystal layer 2, pixel electrode 172, and the glass substrate 171 of resin bed 115, top layer 114, black matrix 13 by optically focused.At this moment, owing to be provided with light polarizing film 8B at the light incident side of micro lens substrate 11, when incident light L saw through liquid crystal layer 2, incident light L became rectilinearly polarized light.At this moment, corresponding to the state of orientation of the liquid crystal molecule of liquid crystal layer 2, control the direction of polarized light of this incident light L.Therefore, see through light polarizing film 7B, can control the brightness of emergent light by making incident light L through liquid crystal board 1B.

Like this, liquid crystal board 1B has micro lens 113, and the incident light L that sees through micro lens 113 is by the opening 131 of optically focused by black matrix 13.On the other hand, in the part that does not have to form the opening 131 of deceiving matrix 13, incident light L is by shading.Therefore, in liquid crystal board 1B, prevented to leak unwanted light from pixel part in addition, and, decay suppressed at the incident light L of pixel portion.Therefore, liquid crystal board 1B has high optical transmission rate in pixel portions.

Inorganic alignment film

3B, 4B have been formed at the TFT substrate by the known method manufacturing 17 for example and liquid crystal board on counter substrate 12 respectively, afterwards, by the encapsulant (not shown) both are engaged, then, from the inclosure hole (not shown) of the space part that forms thus liquid crystal is injected in the space part, then, can make this liquid crystal board 1B by stopping up this inclosure hole.

And, in above-mentioned liquid crystal board 1B, used the TFT substrate, but also can use other liquid crystal drive substrates beyond the TFT substrate as liquid crystal drive substrate, for example, TFD substrate, STN substrate etc. is used as liquid crystal drive substrate.

In addition, the liquid crystal board with above-mentioned inorganic alignment film can suitably use strong local of light or in outdoor application.

Then, the electronic equipment of the present invention (liquid crystal indicator) for having described liquid crystal board 1A is elaborated based on Fig. 9～embodiment shown in Figure 10.

In the figure, PC 1100 is made of with display unit 1106 main part 1104 with keyboard 1102, and main part 1104 supports that by hinge display unit 1106 can rotate.

In this PC 1100, display unit 1106 has described liquid crystal board 1A and not shown backlight.Can display image (information) by making from the light transmission liquid crystal board 1A of backlight.

In the figure, mobile phone 1200 has: a plurality of action buttons 1202; Obedient mouthful 1204; Speech mouth 1206; Described liquid crystal board 1A and not shown backlight.

Figure 11 is the stereographic map of the structure of the expression digital still camera that uses electronic equipment of the present invention.And, in the figure, also represented simply and being connected of external unit.

Herein, common camera makes the sensitization of silver salt photo egative film by the light image of the scenery of shooting, relative therewith, the imaging apparatus of digital still camera 1300 by CCD (Charge Coupled Device) etc. carries out light-to-current inversion to the light image of the scenery taken and generates image pickup signal (picture signal).

The back side at the casing (body) 1302 of digital still camera 1300, be provided with described liquid crystal board 1A and not shown backlight, formed the structure that the image pickup signal based on CCD shows, liquid crystal board 1A plays a role as the view finder of the electronic image that shows the scenery of taking.

Be provided with circuit substrate 1308 in the inside of casing.This circuit substrate 1308 is provided with the storer that can accommodate (storage) image pickup signal.

In addition, the light receiving unit 1304 that comprises optical lens (shooting optics) or CCD etc. face side being provided with of casing 1302.

The volume image that is taken that cameraman's affirmation shows in liquid crystal board 1A, if press shutter release button 1306, the image pickup signal of this CCD constantly is transmitted in the storer that is housed in circuit substrate 1308.

In addition, in this digital still camera 1300, be provided with the input and output terminal 1314 that video signal output terminal 1312 and data communication are used in the side of casing 1302.And, as shown in the figure, as required TV monitor 1430 is connected on the video signal output terminal 1312 respectively; PC 1440 is connected on the input and output terminal 1314 that data communication uses.And,, the image pickup signal that is housed in the storer of circuit substrate 1308 is outputed on TV monitor 1430 or the PC 1440 by the operation of regulation.

Then, as an example of electronic equipment of the present invention, describe for the electronic equipment (liquid crystal projector) that uses above-mentioned liquid crystal board 1B.

Figure 12 is the synoptic diagram of the optical system of pattern ground expression electronic equipment of the present invention (projection type image display apparatus).

As shown in the drawing, projection type image display apparatus 300 has: light source 301; Lamp optical system with a plurality of compound lenss; Color separation optical system (leaded light optical system) with a plurality of dichronic mirror etc.; The liquid crystal light valve of corresponding with redness (red usefulness) (liquid crystal light shutter array) 24; The liquid crystal light valve of corresponding with green (green usefulness) (liquid crystal light shutter array) 25; The liquid crystal light valve of corresponding with blueness (blue usefulness) (liquid crystal light shutter array) 26; Colour splitting prism (look combining optical) 21 and projection lens (transmission optics system) 22, described colour splitting prism 21 have formed the dichronic mirror one side 211 of a reflection red light and the dichronic mirror one side 212 of a reflect blue light.

In addition, lamp optical system has compound lens 302 and 303.Color separation optical system has: catoptron 304,306,309: the dichronic mirror 305 of reflect blue light and green light (only seeing through red light); The dichronic mirror 307 of reflects green; The dichronic mirror (or catoptron of reflect blue light) 308 of reflect blue light; Collector lens 310,311,312,313 and 314.

Liquid crystal light valve 25 has described liquid crystal board 1B.Liquid crystal

light valve

24 and 26 also has the structure identical with liquid crystal light valve 25.Liquid crystal board 1B with these liquid

crystal light valves

24,25 and 26 is connected respectively on the not shown driving circuit.

And in projection type image display apparatus 300, colour splitting prism 21 has constituted optical module 20 with projection lens 22.In addition, this optical module 20 has constituted display unit 23 with the liquid crystal

light valve

24,25 and 26 that is fixedly installed on the colour splitting prism 21.

Below, the effect of projection type image display apparatus 300 is described.

The white light (white light beam) that penetrates from light source 301 sees through compound lens 302 and 303.Make light intensity (Luminance Distribution) homogeneous of this white light by compound lens 302 and 303.Preferably its light intensity is bigger for the white light that penetrates from light source 301.Thus, can make the image that on screen 320, forms distinct more.In addition, in projection type image display apparatus 300,, even under the big situation of the light intensity that penetrates from light source 301, also can obtain good long term stability owing to used the good liquid crystal board 1B of photostability.

The white light that sees through compound lens 302 and 303 mirror 304 that is reflected reflexes to left side among Figure 12, and blue light among its reflected light (B) and green light (G) are reflexed to downside among Figure 12 by dichronic mirror 305 respectively, and red light (R) sees through dichronic mirror 305.

The red light that sees through dichronic mirror 305 mirror 306 that is reflected reflexes to downside among Figure 12, and this reflected light by shaping, is injected the liquid crystal light valve 24 of red usefulness by collector lens 310.

The blue light and the green light among the green light that are reflected by dichronic mirror 305 are reflexed to left side among Figure 12 by dichronic mirror 307, and blue light sees through dichronic mirror 307.

Passed through collector lens 311 by shaping by the green light that dichronic mirror 307 reflects, inject the liquid crystal light valve 25 of green usefulness.

In addition, the blue light that sees through dichronic mirror 307 is reflexed to left side among Figure 12 by dichronic mirror (or catoptron) 308, and this reflected light mirror 309 that is reflected reflexes to upside among Figure 12.Described blue light by shaping, is injected the liquid crystal light valve 26 of blue usefulness by collector lens 312,313 and 314.

Like this, the white light from light source 301 penetrates by color separation optical system, is separated into redness, green and blue three primary colors by look, is directed injecting corresponding liquid crystal light valve respectively.

At this moment, by the driving circuit (driver part) that moves based on the picture signal of redness usefulness, each pixel (thin film transistor (TFT) 173 and the pixel electrode 172 that is connected thereon) of the liquid crystal board 1B that liquid crystal light valve 24 is had is carried out switch control (On/Off), i.e. modulation.

Similarly, green light and blue light are injected liquid crystal light valve 25 and 26 respectively, and be modulated in liquid crystal board 1B separately, forms the image of green usefulness and the image of blue usefulness thus.At this moment, by the driving circuit that moves based on the picture signal of green usefulness, come each pixel of the liquid crystal board 1B that switch control liquid crystal light valve 25 had,, come each pixel of the liquid crystal board 1B that switch control liquid crystal light valve 26 had by driving circuit based on the picture signal action of blueness usefulness.

In view of the above, red light, green light and blue light by liquid crystal

light valve

24,25 and 26 modulation, form the image of the image of red usefulness, green usefulness and the image of blue usefulness respectively respectively.

The image of the redness usefulness that forms by described liquid crystal light valve 24, promptly from the red light of liquid crystal light valve 24, inject colour splitting prism 21 from face 213, reflexed to left side among Figure 12 by dichronic mirror one side 211, see through dichronic mirror one side 212, penetrate from exit facet 216.

In addition, the image of the green usefulness that is formed by described liquid crystal light valve 25, promptly from the green light of liquid crystal light valve 25 is injected colour splitting prism 21 from face 214, sees through dichronic mirror one

side

211 and 212 respectively, penetrates from exit facet 216.

In addition, the image of the blueness usefulness that is formed by described liquid crystal light valve 26, promptly from the blue light of liquid crystal light valve 26 is injected colour splitting prism 21 from face 215, is reflexed to left side among Figure 12 by dichronic mirror one side 212, sees through dichronic mirror one side 211, penetrates from exit facet 216.

Like this, from the light of all kinds of described liquid crystal

light valve

24,25 and 26, promptly each image that is formed by described liquid crystal

light valve

24,25 and 26 is synthesized by colour splitting prism 21, has formed colored image thus.By projection lens 22 with this image projection (enlarge projection) to the screen 320 that is arranged on the assigned position.

And electronic equipment of the present invention can also be enumerated except the projection type image display apparatus of the digital still camera of the mobile phone of the PC (mobile model PC) of Fig. 9, Figure 10, Figure 11, Figure 12: for example TV or video camera; The find a view video tape recorder of type, monitor direct viewing type; Automobile navigation apparatus; Pager; Electronic memo (having communication function); E-dictionary; Electronic calculator; Word processor; Workstation; Videophone; Antitheft with TV monitor, electronics binoculars; The POS terminal; Equipment (for example ATM (automatic teller machine) of financial institution, passimeter) with touch-screen; Medical Devices (for example electronic thermometer, sphygmomanometer, blood-glucose meter, cardiogram display device, diagnostic ultrasound equipment, endoscope-use display device); Fish finder; Various sensing equipments; Metering outfit class (for example, the metering outfit class of vehicle, aircraft, boats and ships) and aerolog etc.And, certainly use described liquid crystal board of the present invention, be used as display part, the monitor portion of these various electronic equipments.

More than, be illustrated based on illustrated embodiment, but the present invention is not limited to this.

For example, in the formation method of inorganic alignment film of the present invention, can append the operation of one or more any purpose.In addition, for example, in electronic device substrate of the present invention, liquid crystal board and electronic equipment, the structure of each several part can be replaced to the structure arbitrarily of performance said function, in addition, can also add structure arbitrarily.

In addition, in described first embodiment, constitute the situation of target although understand a plurality of parts to be configured to concentric circles, but the shape or the configuration mode that constitute the parts of target are not limited to described situation.For example shown in Figure 13, can constitute target 500 by the parts that form prism-shaped, square tube type.In addition as shown in figure 14, target 500 also can have the semi-tubular parts that shape when overlooking is U word shape, as second parts 520, the 3rd parts 530.Thus, can carry out the replacing of first parts 510 more easily.

In addition, target also can be to be formed by integrated by a plurality of parts etc., even this situation of target where necessary, can only selectively be changed the parts (for example, first parts) of the regulation that constitutes target.

In addition, in described second embodiment, when the irradiation ion beam, although understand the situation that target is moved on the one dimension direction, but target also can move on the direction more than the two dimension.

In addition, in described second embodiment, although understand that target is the situation with shape of minor coin, but the size of target does not limit especially.

In addition, in said embodiment, projection type image display apparatus (electronic equipment) has three liquid crystal boards, all uses situations of liquid crystal board of the present invention although understand their, but as long as they one of them be that liquid crystal board of the present invention is just passable at least.At this moment, preferably, the employed liquid crystal board of the liquid crystal light valve of blue at least usefulness is to use liquid crystal board of the present invention.

[embodiment]

[structure of liquid crystal board]

Make liquid crystal board shown in Figure 8 as described below.

(embodiment 1)

Make the micro lens substrate at first, as described below.

Prepare unprocessed quartz glass substrate (transparency carrier) that thickness is approximately 1.2mm as mother metal, it is immersed in 85 ℃ the cleaning fluid (mixed liquor of sulfuric acid and hydrogen peroxide) cleans, its surface is clean.

Afterwards, by the CVD method, on the surface of this quartz glass substrate and the back side, form the film of the polysilicon of thickness 0.4 μ m.

Then, on the polysilicon film that forms, form and the corresponding opening of recess that forms.

This is undertaken by following.At first, form resist layer on polysilicon film, this resist layer has the figure of the recess of formation.Then, carry out the dry ecthing of CF gas, form opening for polysilicon film.Then, remove described resist layer.

Then, quartz glass substrate is immersed in the etching solution (mixed solution of 10wt% fluoric acid+10wt% glycerine) carried out wet etching (etch temperature is 30 ℃) in 120 minutes, on quartz glass substrate, form recess.

Afterwards, quartz glass substrate was immersed in the 15wt% tetramethylammonium hydroxide aqueous solution 5 minutes,, obtains with the substrate of micro lens with recess by removing the polysilicon film that is formed on the surface and the back side.

Then, forming on the face of this band micro lens with the recess of the substrate of recess, bubble-freely smear the optical adhesive (refractive index 1.60) of ultraviolet ray (UV) constrictive type acrylic compounds, then, the cloche (top layer) of quartz glass system is engaged with this optical adhesive, then, this optical adhesive irradiation ultraviolet radiation is made the optical adhesive sclerosis, obtain laminate.

Afterwards, grind, the grinding cloche is to the thickness of 50 μ m, obtains the micro lens substrate.

And in the micro lens substrate that obtains, the thickness of resin bed is 12 μ m.

For the above micro lens substrate that obtains like that, utilize sputtering method and photoetching process, be formed on the corresponding position of the micro lens of cloche on the photomask (Cr film) of the thickness 0.16 μ m of opening is set, promptly black matrix.And, by the ITO film (nesa coating) of sputtering method formation thickness 0.15 μ m on black matrix, make the liquid crystal board counter substrate.

With on the nesa coating of counter substrate, utilize device shown in Figure 3, following such inorganic alignment film that forms at the liquid crystal board that obtains like this.

At first, by In, on the target holding member S6 that constitutes by copper, the SiO of shape as shown in Figure 4 is set as bonding agent ₂The target 500 of system.510 one-tenth of first parts that constitute target 500 are cylindric, and its diameter: 50mm, highly: 2mm; The internal diameter of the external diameter of second parts 520: 300mm, the part that contacts with first parts 510: 50mm, internal diameter partly: the 150mm that contacts with target holding member S6 (bonding agent), highly: 3mm becomes cylindric.

Then, liquid crystal board is arranged on the base material fixed mount S5 in the vacuum chamber S3 with counter substrate, by off-gas pump S4 to reducing pressure 7.0 * 10 in the vacuum chamber S3 ^-5Pa.

Then, provide the argon gas body by gas supply source S13 in ion gun S1, S11 applies voltage to filament, produces plasma, and extraction electrode S12 is applied the ion accelerating voltage of 1800V, speeding-up ion, as ion beam to target 500 irradiations.And the ion beam current of irradiated ion beam is 250mA.

From being drawn sputtering particle to liquid crystal board with counter substrate by the target 500 of ion beam irradiation, forming by average thickness on nesa coating is the SiO of 0.05 μ m ₂The inorganic alignment film that constitutes.And, the irradiating angle of sputtering particle (incident angle) θ _sIt is 80 °.In addition, the liquid crystal board during film forming is 100 ℃ with the temperature of counter substrate.

Use the tiltangle of counter substrate for the liquid crystal board of the column crystallization that constitutes the inorganic alignment film that forms as described above _cBe 45 °, the width of column crystallization is 25nm.

In addition, on the surface of the TFT substrate of separately preparing (quartz glass system),, also formed inorganic alignment film with similarly above-mentioned.

The liquid crystal board that will form inorganic alignment film by encapsulant engages with the TFT substrate that forms inorganic alignment film with counter substrate.The liquid crystal molecule that constitutes liquid crystal layer carries out this joint to the direction of orientation of left handed twist, the inorganic alignment film 90 ° of ground that stagger.

Then, from being formed on the inclosure hole of the space part between inorganic alignment film-inorganic alignment film, with liquid crystal (メ Le Network corporate system: mj99247) inject in the space part, stop up this inclosure hole then.The thickness of the liquid crystal layer that forms is approximately 3 μ m.

Afterwards, by on the outside surface side of liquid crystal board, engaging light polarizing film 8B, light polarizing film 7B respectively, make the TFT liquid crystal board of structure shown in Figure 8 with the outside surface side of counter substrate and TFT substrate.The light polarizing film that use makes the film that is made of polyvinyl alcohol (PVA) (PVA) extend to an axial direction.And, decide the direction of engagement of light polarizing film 7B, light polarizing film 8B respectively based on the direction of orientation of inorganic alignment film 3B, inorganic alignment film 4B.When applying voltage, do not see through incident light, when not applying voltage, incident light is seen through, engage light polarizing film 7B, light polarizing film 8B.

And the tilt angle of the liquid crystal board of manufacturing is in 3～9 ° scope.

(embodiment 2～6)

Each condition when forming inorganic alignment film is as shown in table 1, except forming by SiO ₂Outside the inorganic alignment film that constitutes, make liquid crystal board in the same manner with described embodiment 1.

(embodiment 7～10)

Use Al ₂O ₃As target 500, each condition when forming inorganic alignment film is as shown in table 1, except forming by Al ₂O ₃Outside the inorganic alignment film that constitutes, make liquid crystal board in the same manner with described embodiment 1.

(embodiment 11)

Except the target that uses shape shown in Figure 5, make liquid crystal board in the same manner with described embodiment 1.510 one-tenth of first parts that constitute target 500 are cylindric, its diameter: 50mm, highly: 2mm; 520 one-tenth of second parts are cylindric, its external diameter: 90mm, internal diameter: 50mm, highly: 2mm, 530 one-tenth of the 3rd parts are cylindric, the internal diameter of its external diameter: 300mm, the part that contacts with second parts 520: 90mm, internal diameter partly: the 100mm that contacts with target holding member S6 (bonding agent), highly: 3mm.

(comparative example 1)

Do not use device shown in Figure 3, prepare solution (Japan Synthetic Rubber Co. Ltd's system: AL6256) of polyimide based resin (PI), pass through spin-coating method, forming average thickness at liquid crystal board on the nesa coating of counter substrate is the film of 0.05 μ m, carry out friction treatment, make tilt angle become 2～3 °, except alignment films, make liquid crystal board in the same manner with described embodiment 1.And, in comparative example 1, when friction treatment, produced dust.

(comparative example 2)

Except using impartible SiO ₂Parts (diameter: 300mm, the thickness:, make liquid crystal board in the same manner of the collar plate shape of system with described embodiment 1 5mm) as beyond the target 500.

(comparative example 3)

Except using impartible SiO ₂Parts (diameter: 250mm, the thickness:, make liquid crystal board in the same manner of the collar plate shape of system with described embodiment 1 5mm) as beyond the target 500.

(comparative example 4)

Except do not make the sputtering particle oblique incidence that produces by target 500 to liquid crystal board with on the counter substrate, make liquid crystal board in the same manner with described embodiment 2.

(comparative example 5)

Except the use evaporation coating device forms inorganic alignment film, make liquid crystal board in the same manner with described embodiment 2.

[evaluation of the utilization ratio of target]

For the foregoing description 1～11 and comparative example 2～4, respectively with above-mentioned same method, do not change target, carry out the formation of inorganic alignment film repeatedly.Then, the inorganic alignment film that forms is carried out ultimate analysis, the containing ratio of the In in inorganic alignment film reaches the moment more than the 1ppm, ends the formation of alignment films.

In the less comparative example 3 of the size of the employed target of film forming, in the inorganic alignment film of first of formation, detected the In of high concentration.

In addition, in embodiment 1～11 and comparative example 2,4, in the moment of the inorganic alignment film that forms roughly the same quantity, the containing ratio of In reaches more than the normal concentration, in embodiment 1～11, second parts this moment (and the 3rd parts) almost are not consumed, and by only changing first parts (need not change second parts, the 3rd parts), just can carry out the manufacturing of inorganic alignment film repeatedly.In other words, in embodiment 1～11, can only change the violent part of consumption of target, the utilization ratio height of target.In addition, in embodiment 1～11, even under the situation about using continuously not changing second parts, the 3rd parts, by changing first parts, the detection limit of In descends once more, can form the few suitable alignment films of containing ratio of impurity.To this, in comparative example 2,4,, must change target integral body in order to continue the manufacturing of inorganic alignment film.

[evaluation of liquid crystal board]

For the liquid crystal board of in the foregoing description 1～11 and comparative example 1～5, making (as the liquid crystal board of first manufacturing), measure light transmission continuously.Each liquid crystal board is placed under 50 ℃ the temperature, under the state that does not apply voltage, by irradiation 151m/mm ²The white light of beam density carry out the mensuration of light transmission.

And, as the evaluation of liquid crystal board, beginning from the irradiation of the white light of the liquid crystal board comparative example 1, made, the light transmission at light transmission and initial stage compares, and is benchmark to drop to time (fast light time) of 50%, estimates by following four-stage.

◎: the fast light time is at more than five times of comparative example 1.

Zero: the fast light time is more than the twice of comparative example 1, less than five times.

△: the fast light time is at more than a times, less than twice of comparative example 1.

*: fast light time ratio comparative example 1 is poor.

Table 1 is summed up also and is shown: the formation condition of inorganic alignment film, the average thickness of inorganic alignment film, in the evaluation result of the utilization ratio of the pre-dumping angle of each liquid crystal board, target, the evaluation result of liquid crystal board.And, in table 1, the evaluation of the utilization ratio of target, best usefulness " ◎ " expression, enough good usefulness " zero " expression, poor slightly usefulness " △ " expression, usefulness " * " expression of non-constant." internal diameters of second parts " in the table 1, " internal diameters of the 3rd parts " in addition, expression respectively: with the value of the internal diameter of second parts at the contacted position of first parts; Value with the internal diameter of the 3rd parts at the contacted position of second parts.

[table 1]

	The constituent material of alignment films	Pressure [Pa] in the vacuum chamber	The irradiating angle θ of sputtering particle _s[°]	Ion accelerating voltage [V]	Ion beam current [mA]	The diameter of first parts [mm]	The internal diameter of second parts [mm]	The internal diameter of the 3rd parts [mm]	The diameter of target [mm]	The average thickness of alignment films [μ m]	Tilt angle [°]	The utilization ratio of target	Photostability
	The constituent material of alignment films	Pressure [Pa] in the vacuum chamber	The irradiating angle θ of sputtering particle _s[°]	Ion accelerating voltage [V]	Ion beam current [mA]	The diameter of first parts [mm]	The internal diameter of second parts [mm]	The internal diameter of the 3rd parts [mm]	The diameter of target [mm]	The average thickness of alignment films [μ m]	Tilt angle [°]	The utilization ratio of target	Photostability	Embodiment 1	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.05	3～9	◎	◎
Embodiment 2	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.07	3～9	◎	◎	Embodiment 1	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.05	3～9	◎	◎
Embodiment 2	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.07	3～9	◎	◎	Embodiment 3	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.09	3～9	◎	○
Embodiment 4	SiO ₂	7×10 ^-5	80	2500	250	70	70	-	300	0.05	3～9	◎	○	Embodiment 3	SiO ₂	7×10 ^-5	80	1800	250	50	50	-	300	0.09	3～9	◎	○
Embodiment 4	SiO ₂	7×10 ^-5	80	2500	250	70	70	-	300	0.05	3～9	◎	○	Embodiment 5	SiO ₂	7×10 ^-5	80	2500	150	70	70	-	300	0.05	3～7	◎	◎
Embodiment 6	SiO ₂	7×10 ^-5	80	2500	100	70	70	-	300	0.05	3～7	◎	○	Embodiment 5	SiO ₂	7×10 ^-5	80	2500	150	70	70	-	300	0.05	3～7	◎	◎
Embodiment 6	SiO ₂	7×10 ^-5	80	2500	100	70	70	-	300	0.05	3～7	◎	○	Embodiment 7	Al ₂O ₃	7×10 ^-5	85	1800	200	70	70	-	300	0.05	3～9	◎	◎
Embodiment 8	Al ₂O ₃	7×10 ^-5	80	2000	200	70	70	-	300	0.05	3～9	◎	◎	Embodiment 7	Al ₂O ₃	7×10 ^-5	85	1800	200	70	70	-	300	0.05	3～9	◎	◎
Embodiment 8	Al ₂O ₃	7×10 ^-5	80	2000	200	70	70	-	300	0.05	3～9	◎	◎	Embodiment 9	Al ₂O ₃	7×10 ^-5	85	2300	200	70	70	-	300	0.05	3～9	◎	○
Embodiment 10	Al ₂O ₃	7×10 ^-5	80	2500	200	70	70	-	300	0.05	3～9	◎	○	Embodiment 9	Al ₂O ₃	7×10 ^-5	85	2300	200	70	70	-	300	0.05	3～9	◎	○
Embodiment 10	Al ₂O ₃	7×10 ^-5	80	2500	200	70	70	-	300	0.05	3～9	◎	○	Embodiment 11	SiO ₂	7×10 ^-5	78	1800	250	50	50	90	300	0.05	3～7	◎	◎
Comparative example 1	PI	-	-	-	-	-	-	-	-	0.05	2～3	-	-	Embodiment 11	SiO ₂	7×10 ^-5	78	1800	250	50	50	90	300	0.05	3～7	◎	◎
Comparative example 1	PI	-	-	-	-	-	-	-	-	0.05	2～3	-	-	Comparative example 2	SiO ₂	5×10 ^-4	80	1500	250	-	-	-	300	0.05	3～7	×	○
Comparative example 3	SiO ₂	5×10 ^-4	80	1500	250	-	-	-	250	0.05	3～7	×	△	Comparative example 2	SiO ₂	5×10 ^-4	80	1500	250	-	-	-	300	0.05	3～7	×	○
Comparative example 3	SiO ₂	5×10 ^-4	80	1500	250	-	-	-	250	0.05	3～7	×	△	Comparative example 4	SiO ₂	5×10 ^-4	0	1500	250	-	-	-	300	0.05	0	×	○
Comparative example 5	SiO ₂	-	-	-	-	-	-	-	-	0.05	0	×	△	Comparative example 4	SiO ₂	5×10 ^-4	0	1500	250	-	-	-	300	0.05	0	×	○

PI: polyimide resin

As can be seen from Table 1, in the present invention, can utilize target efficiently.Especially, in embodiment 11, the utilization ratio of target is superior especially, that is, in embodiment 11, when the replacing of first parts, second parts, the 3rd parts all almost are not consumed, and can see that especially the face shaping of the 3rd parts does not change.Therefore, carry out the formation of inorganic alignment film afterwards repeatedly,, can consider directly to utilize the 3rd parts even when the replacing of second parts arrives constantly.To this, in comparative example, the utilization ratio of target is poor.Promptly, in comparative example 3, in the inorganic alignment film of first of formation, detect the In of high concentration, just target can not be used for the formation of suitable inorganic alignment film, in addition, in comparative example 2,4, though target is consumed partly, have to change target integral body, the utilization ratio of target is low.

In addition, compare with the liquid crystal board of comparative example 1, liquid crystal board of the present invention has demonstrated good photostability.In addition, in liquid crystal board of the present invention, can access enough tilt angles, can positively control the state of orientation of liquid crystal molecule, in the liquid crystal board of comparative example 4 and 5, can not obtain enough tilt angles, be difficult to control the state of orientation of liquid crystal molecule.

[evaluation of liquid crystal projector (electronic equipment)]

The TFT liquid crystal board that use is made in the foregoing description 1～11 and comparative example 1～5 is assembled the liquid crystal projector (electronic equipment) of structure shown in Figure 12, this liquid crystal projector of continuous drive 5000 hours.

And, as the evaluation of liquid crystal projector, observe soon projects images and the back 5000 hours projects images of driving after driving, carry out the evaluation of vividness by following four-stage.

◎: observe distinct projects images.

Zero: observe roughly distinct projects images.

△: observe a little not too distinct projects images.

*: observe feint projects images.

Its result is as shown in table 2.

[table 2]

	Vividness
	Vividness		After the driving soon	Drive after 5000 hours
	Embodiment		After the driving soon	Drive after 5000 hours
1	Embodiment	◎	◎
1	Embodiment 2	◎	◎	◎	◎
Embodiment 3	Embodiment 2	◎	◎	◎	◎
Embodiment 3	Embodiment 4	◎	◎	◎	◎
Embodiment 5	Embodiment 4	◎	○	◎	◎
Embodiment 5	Embodiment 6	◎	○	◎	○
Embodiment 7	Embodiment 6	◎	◎	◎	○
Embodiment 7	Embodiment 8	◎	◎	◎	○
Embodiment 9	Embodiment 8	◎	◎	◎	○
Embodiment 9	Embodiment 10	◎	◎	◎	◎
Embodiment 11	Embodiment 10	◎	◎	◎	◎
Embodiment 11	Comparative example 1	◎	◎	◎	×
Comparative example 2	Comparative example 1	◎	○	◎	×
Comparative example 2	Comparative example 3	◎	○	○	△
Comparative example 4	Comparative example 3	△	△	○	△
Comparative example 4	Comparative example 5	△	△	△	△

As can be seen from Table 2, the liquid crystal projector (electronic equipment) that uses liquid crystal board of the present invention to make even under the driven situation of long-time continuous, also can obtain distinct projects images.

To this, in the liquid crystal projector that the liquid crystal board that uses comparative example 1 is made, along with driving time, the vividness of projects images obviously descends.This is because though initial stage, the orientation unanimity of liquid crystal molecule drives by long-term, alignment films deterioration, the orientation decline of liquid crystal molecule.And, in the liquid crystal projector that the liquid crystal board that uses comparative example 4 and 5 is made, initially just can not get distinct projects images from driving.This be because the orientation of inorganic alignment film originally with regard to low cause.

In addition, make PC, mobile phone, digital still camera, carry out same evaluation, can obtain identical result with liquid crystal board of the present invention.

From these results as can be seen, liquid crystal board of the present invention, electronic equipment have good photostability, even long-term use also can obtain stable properties.

[manufacturing of liquid crystal board]

Make liquid crystal board shown in Figure 8 as described below.

(embodiment 12)

At first, make the liquid crystal board counter substrate in the same manner with described embodiment 1.

Use device shown in Figure 6, with on the nesa coating of counter substrate, form inorganic alignment film as described below at the liquid crystal board that obtains.

At first, by In, on the target holding member S6 that constitutes by copper, SiO as shown in Figure 7 is set as bonding agent ₂Target 500 (long axis direction length: 500mm, short-axis direction length: 350mm, the thickness: 5mm) of the minor coin type of system.

Then, provide the argon gas body by gas supply source S13 in ion gun S1, S11 applies voltage to filament, produces plasma, and extraction electrode S12 is applied the ion accelerating voltage of 2000V, speeding-up ion, as ion beam to target 500 irradiations.And the ion beam current of irradiated ion beam is 250mA.

In addition, when ion beam irradiation, target is moved back and forth on its long axis direction.The translational speed of target is 30mm/ second.

In addition, on the surface of the TFT substrate of preparing separately (quartz glass system),, also formed inorganic alignment film with similarly above-mentioned.

Then, from the inclosure hole of the space part that between inorganic alignment film-inorganic alignment film, forms, with liquid crystal (メ Le Network corporate system: mj99247) inject in the space part, stop up this inclosure hole then.The thickness of the liquid crystal layer that forms is approximately 3 μ m.

Afterwards, by on the outside surface side of liquid crystal board, engaging light polarizing film 8B, light polarizing film 7B respectively, make the TFT liquid crystal board of structure shown in Figure 8 with the outside surface side of counter substrate and TFT substrate.The light polarizing film that use makes the film that is made of polyvinyl alcohol (PVA) (PVA) extend to an axial direction.And, decide the direction of engagement of light polarizing film 7B, light polarizing film 8B respectively based on the direction of orientation of inorganic alignment film 3B, inorganic alignment film 4B.That is, when applying voltage, do not see through incident light, when not applying voltage, incident light is seen through, engage light polarizing film 7B, light polarizing film 8B.

And the tilt angle of the liquid crystal board of manufacturing is in 3～7 ° scope.

(embodiment 13～18)

Each condition when forming inorganic alignment film is as shown in table 3, except forming by SiO ₂Outside the inorganic alignment film that constitutes, make liquid crystal board in the same manner with described embodiment 12.

(embodiment 19～21)

Use Al ₂O ₃As target 500, each condition when forming inorganic alignment film is as shown in table 3, except forming by Al ₂O ₃Outside the inorganic alignment film that constitutes, make liquid crystal board in the same manner with described embodiment 12.

(comparative example 6)

Do not use device shown in Figure 6, prepare solution (Japan Synthetic Rubber Co. Ltd's system: AL6256) of polyimide based resin (PI), pass through spin-coating method, forming average thickness at liquid crystal board on the nesa coating of counter substrate is the film of 0.05 μ m, carry out friction treatment, make tilt angle become 2～3 °, except alignment films, make liquid crystal board in the same manner with described embodiment 12.And, in comparative example 6, when friction treatment, produced dust.

(comparative example 7)

Except using SiO ₂The parts of the collar plate shape of system (diameter: 350mm, thickness: 5mm) as target 500, when ion beam irradiation, do not make beyond target moves, make liquid crystal board in the same manner with described embodiment 17.

(comparative example 8)

Except do not make the sputtering particle oblique incidence that produces by target 500 to liquid crystal board with on the counter substrate, make liquid crystal board in the same manner with described comparative example 7.

(comparative example 9)

Except the use evaporation coating device forms inorganic alignment film, make liquid crystal board in the same manner with described comparative example 7.

[evaluation of the utilization ratio of target]

For the foregoing description 12～21 and comparative example 7～8, respectively with above-mentioned same method, do not change target, carry out the formation of inorganic alignment film repeatedly.Then, the inorganic alignment film that forms is carried out ultimate analysis, the containing ratio of the In in inorganic alignment film reaches the moment more than the 0.5ppm, ends the formation of alignment films, is determined at the weight of the target in this moment.Press the utilization ratio of the benchmark evaluation target of following four-stage.

◎: the residual quantity of target is less than 65% of initial stage weight.

Zero: the residual quantity of target in the early stage more than 65% of weight, less than 75% of initial stage weight.

△: the residual quantity of target in the early stage more than 75% of weight, less than 85% of initial stage weight.

*: the residual quantity of target is more than 85% of weight in the early stage.

[evaluation of liquid crystal board]

For the liquid crystal board of in the foregoing description 12～21 and comparative example 6～9, making (as the liquid crystal board of first manufacturing), measure light transmission continuously.Each liquid crystal board is placed under 50 ℃ temperature, under the state that does not apply voltage, by irradiation 151m/mm ²The white light of beam density carry out the mensuration of light transmission.

And, as the evaluation of liquid crystal board, beginning from the irradiation of the white light of the liquid crystal board comparative example 6, made, the light transmission at light transmission and initial stage compares, and is benchmark to drop to time (fast light time) of 50%, estimates by following four-stage.

◎: the fast light time is at more than five times of comparative example 6.

Zero: the fast light time is more than the twice of comparative example 6, less than five times.

△: the fast light time is at more than a times, less than twice of comparative example 6.

*: fast light time ratio comparative example 6 is poor.

Table 3 gathers and shows: the formation condition of inorganic alignment film, the average thickness of inorganic alignment film, in the evaluation result of the utilization ratio of the pre-dumping angle of each liquid crystal board, target, the evaluation result of liquid crystal board.

[table 3]

	The constituent material of alignment films	Pressure [Pa] in the vacuum chamber	The irradiating angle θ of sputtering particle _s[°]	Ion accelerating voltage [V]	Ion beam current [mA]	The translational speed of target [mm/ second]	The average thickness of alignment films [μ m]	Tilt angle [°]	The utilization ratio of target	Photostability
	The constituent material of alignment films	Pressure [Pa] in the vacuum chamber	The irradiating angle θ of sputtering particle _s[°]	Ion accelerating voltage [V]	Ion beam current [mA]	The translational speed of target [mm/ second]	The average thickness of alignment films [μ m]	Tilt angle [°]	The utilization ratio of target	Photostability	Embodiment 12	SiO ₂	7×10 ^-5	80	2000	250	30	0.05	3～7	◎	◎
Embodiment 13	SiO ₂	7×10 ^-5	80	1800	250	25	0.05	3～7	◎	○	Embodiment 12	SiO ₂	7×10 ^-5	80	2000	250	30	0.05	3～7	◎	◎
Embodiment 13	SiO ₂	7×10 ^-5	80	1800	250	25	0.05	3～7	◎	○	Embodiment 14	SiO ₂	7×10 ^-5	80	1800	250	25	0.07	3～7	◎	◎
Embodiment 15	SiO ₂	7×10 ^-5	80	2000	250	30	0.07	3～7	○	◎	Embodiment 14	SiO ₂	7×10 ^-5	80	1800	250	25	0.07	3～7	◎	◎
Embodiment 15	SiO ₂	7×10 ^-5	80	2000	250	30	0.07	3～7	○	◎	Embodiment 16	SiO ₂	7×10 ^-5	80	1600	250	15	0.06	3～7	○	○
Embodiment 17	SiO ₂	7×10 ^-5	80	1500	250	10	0.07	3～7	◎	○	Embodiment 16	SiO ₂	7×10 ^-5	80	1600	250	15	0.06	3～7	○	○
Embodiment 17	SiO ₂	7×10 ^-5	80	1500	250	10	0.07	3～7	◎	○	Embodiment 18	SiO ₂	7×10 ^-5	80	2300	250	15	0.08	3～7	◎	○
Embodiment 19	Al ₂O ₃	7×10 ^-5	80	2000	250	20	0.04	3～7	◎	◎	Embodiment 18	SiO ₂	7×10 ^-5	80	2300	250	15	0.08	3～7	◎	○
Embodiment 19	Al ₂O ₃	7×10 ^-5	80	2000	250	20	0.04	3～7	◎	◎	Embodiment 20	Al ₂O ₃	7×10 ^-5	80	1800	250	30	0.05	3～7	◎	◎
Embodiment 21	Al ₂O ₃	7×10 ^-5	80	2500	250	40	0.04	3～7	○	◎	Embodiment 20	Al ₂O ₃	7×10 ^-5	80	1800	250	30	0.05	3～7	◎	◎
Embodiment 21	Al ₂O ₃	7×10 ^-5	80	2500	250	40	0.04	3～7	○	◎	Comparative example 6	PI	-	-	-	-	-	0.05	2～3	-	-
Comparative example 7	SiO ₂	5×10 ^-4	80	1500	250	-	0.05	3～7	×	◎	Comparative example 6	PI	-	-	-	-	-	0.05	2～3	-	-
Comparative example 7	SiO ₂	5×10 ^-4	80	1500	250	-	0.05	3～7	×	◎	Comparative example 8	SiO ₂	5×10 ^-4	0	1500	250	-	0.05	0	×	○
Comparative example 9	SiO ₂	-	-	-	-	-	0.05	0	×	△	Comparative example 8	SiO ₂	5×10 ^-4	0	1500	250	-	0.05	0	×	○

PI: polyimide resin

As can be seen from Table 3, in the present invention, can utilize target efficiently, to this, in comparative example 7,8, target is consumed partly, and the utilization ratio of target is low.

In addition, compare with the liquid crystal board of comparative example 6, liquid crystal board of the present invention has demonstrated good photostability.In addition, in liquid crystal board of the present invention, can access enough tilt angles, can positively control the state of orientation of liquid crystal molecule, in the liquid crystal board of comparative example 8 and 9, can not obtain enough tilt angles, be difficult to control the state of orientation of liquid crystal molecule.

[evaluation of liquid crystal projector (electronic equipment)]

The TFT liquid crystal board that use is made in the foregoing description 12～21 and comparative example 6～9 is assembled the liquid crystal projector (electronic equipment) of structure shown in Figure 12, this liquid crystal projector of continuous drive 5000 hours.

◎: observe distinct projects images.

Zero: observe roughly distinct projects images.

△: observe a little not too distinct projects images.

*: observe feint projects images.

Its result is as shown in table 4.

[table 4]

	Vividness
	Vividness		After the driving soon	Drive after 5000 hours
	Embodiment		After the driving soon	Drive after 5000 hours
12	Embodiment	◎	◎
12	Embodiment 13	◎	◎	◎	○
Embodiment 14	Embodiment 13	◎	◎	◎	○
Embodiment 14	Embodiment 15	◎	◎	◎	◎
Embodiment 16	Embodiment 15	◎	○	◎	◎
Embodiment 16	Embodiment 17	◎	○	◎	◎
Embodiment 18	Embodiment 17	◎	○	◎	◎
Embodiment 18	Embodiment 19	◎	○	◎	○
Embodiment 20	Embodiment 19	◎	○	◎	○
Embodiment 20	Embodiment 21	◎	○	◎	◎
Comparative example 6	Embodiment 21	◎	×	◎	◎
Comparative example 6	Comparative example 7	◎	×	◎	◎
Comparative example 8	Comparative example 7	△	△	◎	◎
Comparative example 8	Comparative example 9	△	△	△	△

As can be seen from Table 4, the liquid crystal projector (electronic equipment) that uses liquid crystal board of the present invention to make even under the driven situation of long-time continuous, also can obtain distinct projects images.

To this, in the liquid crystal projector that the liquid crystal board that uses comparative example 6 is made, along with driving time, the vividness of projects images obviously descends.This be because, though stage in the early stage, the orientation unanimity of liquid crystal molecule drives by long-term, the alignment films deterioration, the orientation of liquid crystal molecule descends.And, in the liquid crystal projector that the liquid crystal board that uses comparative example 8 and 9 is made, initially just can not get distinct projects images from driving.This be because the orientation of inorganic alignment film originally with regard to low cause.

Claims

1. the formation method of an inorganic alignment film by drawing sputtering particle from the ion beam irradiation of ion beam source to target, incides on the base material described sputtering particle, forms inorganic alignment film, it is characterized in that,

2. the formation method of inorganic alignment film according to claim 1, wherein,

As described target, use the target that constitutes and can only select to change the part among described a plurality of parts by a plurality of parts that can cut apart,

By producing described damaged parts among the described parts of suitable replacing, carry out described repair process.

3. the formation method of inorganic alignment film according to claim 2, wherein,

Described target has columned first parts and surrounds second parts cylindraceous of the outer peripheral face configuration of these first parts.

4. the formation method of inorganic alignment film according to claim 3, wherein,

Described first parts are that diameter is the columned parts of 25～250mm.

5. according to the formation method of any described inorganic alignment film in the claim 2 to 4, wherein,

Diameter as described target integral body is 100～350mm.

6. the formation method of inorganic alignment film according to claim 1, wherein,

Described repair process, the position time to time change that described ion beam is shone on described target.

7. the formation method of inorganic alignment film according to claim 6, wherein,

When the described ion beam of irradiation, described target is relatively moved with respect to described ion beam source and described base material.

8. according to the formation method of claim 6 or 7 described inorganic alignment films, wherein,

The relative moving speed with respect to described ion beam source and described base material of described target is 0.01～40mm/ second.

9. according to the formation method of any described inorganic alignment film in the claim 6 to 8, wherein,

Relatively moving of described target is moving back and forth to the one dimension direction.

10. according to the formation method of any described inorganic alignment film in the claim 6 to 9, wherein,

The length along described moving direction on the face of described ion beam one side of the incident of described target is longer than the length of its vertical direction.

11. according to the formation method of any described inorganic alignment film in the claim 1 to 10, wherein,

The accelerating potential of the described ion beam when shining described ion beam is more than 1200V.

12. according to the formation method of any described inorganic alignment film in the claim 1 to 11, wherein,

The ion beam current of irradiated described ion beam is 50～500mA.

13. according to the formation method of any described inorganic alignment film in the claim 1 to 12, wherein,

Make described sputtering particle from the tilt angle (θ of regulation of the vertical direction with respect to the face of the described inorganic alignment film of formation of described base material _s) direction incide on the described base material,

Be formed on the column crystallization that mainly constitutes of described inorganic alignment film on the described base material, the state orientation that tilts with face direction with respect to the face of the described inorganic alignment film of formation of described base material by inorganic material.

14. the formation method of inorganic alignment film according to claim 13, wherein,

The angle θ of described regulation _sMore than 40 °.

15. according to the formation method of any described inorganic alignment film in the claim 1 to 14, wherein,

By the energy and/or the quantity of the described sputtering particle on the described base material of control arrival, control near the shape in top of the crystallization of described column.

16. the formation method of inorganic alignment film according to claim 15, wherein,

The crystallization of described column is with the angle θ of the regulation that tilts with respect to described base material _cState orientation.

17. according to the formation method of any described inorganic alignment film in the claim 1 to 16, wherein,

Described inorganic material is made of silica type.

18. an inorganic alignment film is characterized in that,

Formation method by any described inorganic alignment film in the claim 1 to 17 forms.

19. inorganic alignment film according to claim 18, wherein,

The average thickness of inorganic alignment film is 0.02～0.3 μ m.

20. an electronic device substrate is characterized in that,

On substrate, have electrode and claim 18 or 19 described inorganic alignment films.

21. a liquid crystal board is characterized in that,

Have claim 18 or 19 described inorganic alignment film and liquid crystal layers.

22. an electronic equipment is characterized in that,

Has the described liquid crystal board of claim 21.