CN1819245A - CMOS image sensor and fabricating method thereof - Google Patents
CMOS image sensor and fabricating method thereof Download PDFInfo
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- CN1819245A CN1819245A CNA200510137608XA CN200510137608A CN1819245A CN 1819245 A CN1819245 A CN 1819245A CN A200510137608X A CNA200510137608X A CN A200510137608XA CN 200510137608 A CN200510137608 A CN 200510137608A CN 1819245 A CN1819245 A CN 1819245A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000009413 insulation Methods 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 6
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- 239000011229 interlayer Substances 0.000 abstract description 4
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- 238000005516 engineering process Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 5
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- 238000000059 patterning Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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Abstract
A CMOS image sensor and fabricating method thereof are disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The present invention includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.
Description
The application requires the korean patent application No.10-2004-0116424 that proposes on December 30th, 2004 and the interests of the korean patent application No.10-2004-0116425 that proposes on December 30th, 2004, and combination is in this application by reference to be used for any purpose as setting forth fully at this for it.
Technical field
The present invention relates to a kind of cmos image sensor and its manufacture method.The present invention is suitable for using widely, and is particularly suitable for by providing inner micro-lens to strengthen the light congregational rate on semiconductor substrate.
Background technology
Imageing sensor is the semiconductor device that light image is converted to the signal of telecommunication.In CCD (charge coupled device) imageing sensor, a plurality of MOS (metal-oxide-metal) electric capacity is closely arranged each other to shift and the stored charge carrier.In CMOS (complementary MOS) imageing sensor, a plurality of MOS transistor are made corresponding to some pixels and by the CMOS technology.The CMOS technology uses control circuit and signal processing circuit as peripheral circuit, and uses MOS transistor progressively to detect the switching system of output.
Cmos image sensor comprises the signal processing chip that comprises photoelectric diode.Cmos image sensor has superiority on its integrated level, because amplifier, analog/digital (A/D) transducer, internal voltage generator, timing generator, Digital Logic etc. can be integrated on each chip.Cmos image sensor also has superiority in power and cost reduction.In addition, the large-scale production of cmos image sensor becomes possibility by the Silicon Wafer etch process more cheap than CCD manufacturing process.CCD is by the special process manufacturing.Therefore, this imageing sensor has expanded to as applications such as digital camera, smart phone, PDA (personal digital assistant), notebook computer, security camera, bar code wand and toys.
When the size of cmos image sensor reduces because of high integration, Pixel Dimensions descends.Therefore, the fill factor, curve factor of ratio of pixel region becomes usually and has only about 30-40% in the indication chip.Therefore, photosensitivity can not maximize.The method that increases fill factor, curve factor has been suggested to improve photosensitivity, yet the logical circuit part that is used for digital processing still has limitation in corresponding field.Therefore, lenticule (ML) comprises photoresist (photoresist) thereby layer makes and utilizes the maximum light absorption of photoelectric diode to become possibility, is incident on except that the path of the light on the zone of photoelectric diode and gathered light by turning to.Lenticule is mainly used in and makes the maximization of incident light intensity.
The method that manufacturing has a lenticular cmos image sensor according to correlation technique is explained as follows with reference to figure 1.
With reference to figure 1, a plurality of epitaxial loayer (not shown) can form on semiconductor substrate 10.A plurality of photoelectric diodes 18 form on epitaxial loayer.Especially, the first epitaxial loayer (not shown) can be grown on semiconductor substrate 10, ruddiness electricity diode (not shown) can form on first epitaxial loayer, the second epitaxial loayer (not shown) can be grown on first epitaxial loayer that comprises ruddiness electricity diode, and green glow electricity diode (not shown) can form on second epitaxial loayer then.
The 3rd epitaxial loayer (not shown) can be grown on second epitaxial loayer that comprises green glow electricity diode, and blue light electricity diode (not shown) can form on the 3rd epitaxial loayer, and is used for a groove of isolating and forms on the 3rd epitaxial loayer.STI (shallow trench isolation from) layer 11 is then by forming with the filling insulating material groove.
Insulation interbed 13 forms on the 3rd epitaxial loayer, and the first metal layer (not shown) can form on insulation interbed 13, and metal wire 14 forms by the patterning the first metal layer then.The technology that forms insulation interbed 13 and metal wire 14 repeats several times to pile up interbed (interlayer) 13 and metal wire 14.
Then, color-filter layer 15 forms on insulation interbed 14.Device protection insulating barrier 16 forms with protection device on color-filter layer 15 and avoids making moist or being subjected to physical shock.Lenticule 17 forms on device protection insulating barrier 16 then.
Yet, when making cmos image sensor, depend on focal length (focal length) between semiconductor substrate 10 and the top layer at the lenticule 17 that forms on the top layer according to correlation technique.Therefore, the light that the side reflected with long-focus of lenticule 17 does not enter photodiode.Alternatively, described light enters adjacent pixels, and this causes the optical crosstalk between the neighbor.
Summary of the invention
Therefore, the present invention relates to cmos image sensor and manufacture method thereof, it has been avoided basically because the limitation of correlation technique and one or more problems that shortcoming causes.
An advantage of the invention is provides cmos image sensor and manufacture method thereof, by its light congregational rate by between photodiode and lenticule, providing inner micro-lens to be enhanced.
Other feature and advantage of the present invention will be set forth in description subsequently, and part will be apparent by described description, maybe can be to understand by the practice of the present invention.Purpose of the present invention and other advantage will be recognized and reach by written description and claim and accompanying drawing specifically noted structure and method in this.
In order to realize these and other advantage and consistent with purpose of the present invention; such as embodiment and broadly described, cmos sensor according to the present invention is included in a plurality of photoelectric diodes on the semiconductor substrate, in a plurality of inner micro-lens on described a plurality of photoelectric diodes, at the insulation interbed on described a plurality of inner micro-lens, a plurality of metal wires, device protecting layer on described insulation interbed and a plurality of lenticules on described device protecting layer in described insulation interbed.
In another aspect of this invention, a plurality of inner micro-lens form to correspond respectively to a plurality of described photoelectric diodes at semiconductor-based intralamellar part.
In another aspect of this invention, semiconductor substrate is formed by the silicon that has del profile (profile) owing to etching degree (etched degree), and described etching degree changes according to the crystallization direction when using etchant etching.
In another aspect of this invention, semiconductor substrate forms by having the silicon of crystalline texture for (1,0,0).
In another aspect of this invention, cmos image sensor comprises: a plurality of photoelectric diodes on the semiconductor substrate, first on described a plurality of photoelectric diodes insulation interbed, in the described first insulation interbed first metal wire, in a plurality of inner micro-lens on the described first insulation interbed, at the insulation of second on described a plurality of inner micro-lens interbed, second metal wire, device protecting layer on the described second insulation interbed and a plurality of lenticules on described device protecting layer in the described second insulation interbed.
In another aspect of this invention, cmos image sensor further comprises the silicon layer that is attached on the first insulation interbed, and wherein a plurality of inner micro-lens form in described silicon layer, to correspond respectively to a plurality of photoelectric diodes.
In another aspect of this invention, described silicon layer is made of the silicon that has the del profile owing to the etching degree, and described etching degree changes according to the crystallization direction when using etchant etching.
In another aspect of this invention, semiconductor substrate constitutes by having the silicon of crystalline texture for (1,0,0).
In another aspect of this invention, the method for making cmos image sensor comprises: thus forming a plurality of photoelectric diodes on the semiconductor substrate, forming a plurality of inner micro-lens on described a plurality of photoelectric diodes, forming described insulation interbed on the described metal wire, on described insulation interbed, form device protecting layer and on described device protecting layer, forming a plurality of lenticules alternately forming insulation interbed and metal wire on described a plurality of inner micro-lens.
In another aspect of this invention, wherein forming a plurality of inner micro-lens comprises: form the zone of photoresist pattern with the corresponding described a plurality of photoelectric diodes that expose on described semiconductor substrate; Form depression by using the photoresist pattern on described semiconductor substrate, to carry out wet etching as mask; And on the semiconductor substrate that comprises described depression (concave recess), form nitride layer.
In another aspect of this invention, being recessed to form step comprises by carry out wet etching on semiconductor substrate and produces the del profile and make the del profile become circle to form the step of each depression by chemical dry ecthing.
In another aspect of this invention, the method for manufacturing cmos image sensor may further comprise the steps: form a plurality of photoelectric diodes on semiconductor substrate; Thereby on described first metal wire, forms described first interbed that insulate alternately forming first insulation interbed and first metal wire on described a plurality of photoelectric diodes; On the described first insulation interbed, form a plurality of inner micro-lens; Thereby on described second metal wire, forms second interbed that insulate alternately forming second insulation interbed and second metal wire on described a plurality of inner micro-lens; On the described second insulation interbed, form device protecting layer; And on described device protecting layer, form a plurality of lenticules.
In another aspect of this invention, wherein form a plurality of inner micro-lens and comprise: adhere to silicon layer on the first insulation interbed, wherein oxide skin(coating) is coated in respectively on the top and bottom surface of silicon layer; On described silicon layer, form the zone of photoresist pattern with the corresponding a plurality of photoelectric diodes that expose; On described silicon layer, carry out wet etching to form depression by using described photoresist pattern as mask; And form nitride layer comprising on the semiconductor substrate of depression.
In another aspect of this invention, wherein forming depression comprises: produce the del profile by carry out wet etching on silicon layer; Remove oxide skin(coating) from the silicon layer top surface; And make the del profile become circle to form each depression by chemical dry ecthing.
Should understand aforesaid general description and detailed description subsequently and all be exemplary, and aim to provide of the present invention further explanation as claim with illustrative.
Description of drawings
Accompanying drawing is included to provide to further understanding of the present invention, and is merged in and constitutes the part of this specification, and embodiments of the invention have been described, and is used from explanation principle of the present invention with description one.In described figure:
Fig. 1 is according to the cross-sectional view of correlation technique by the cmos image sensor of cmos image sensor manufacture method manufacturing;
Fig. 2-the 5th, the cross-sectional view of the method for manufacturing cmos image sensor according to an embodiment of the invention;
Fig. 6 be to use etchant the picture of true picture of etched semiconductor substrate;
Fig. 7-the 13rd, the cross-sectional view of the method for manufacturing cmos image sensor according to another embodiment of the present invention;
Figure 14 is the simulation result figure of the location tracking (laytracing) of correlation technique and cmos image sensor of the present invention.
Embodiment
Reference to embodiments of the invention now will be carried out in detail, and the example illustrates in the accompanying drawings.As possible, identical reference marker will be used for quoting same or analogous part in whole accompanying drawing.
With reference to figure 2, a plurality of epitaxial loayer (not shown) can form on semiconductor substrate 30.A plurality of photodiodes form in photodiode area 32.For example, the first epitaxial loayer (not shown) can be grown on semiconductor substrate 30, ruddiness electricity diode (not shown) can form on first epitaxial loayer, the second epitaxial loayer (not shown) can be grown on the semiconductor substrate 30 that comprises ruddiness electricity diode, and green glow electricity diode (not shown) can form the back on second epitaxial loayer then.Subsequently, the 3rd epitaxial loayer (not shown) can be grown on second epitaxial loayer that comprises green glow electricity diode, blue light electricity diode (not shown) can form on the 3rd epitaxial loayer, a groove that is used for isolating forms on the 3rd epitaxial loayer, and STI (shallow trench isolation from) layer 33 is then by forming with the filling insulating material groove.
The photoresist (not shown) can be coated on the semiconductor substrate 30 that comprises STI layer 33.Photoresist pattern 39 is then by exposure with the zone on the photodiode area 32 of exposing of developing.
With reference to figure 3, use photoresist pattern 39 on semiconductor substrate 30, to carry out wet etching by etchant as mask.In the wet etching that uses etchant, the etching degree changes according to crystallization direction.Therefore, (1,0,0) silicon substrate can be used as semiconductor substrate 30 so that have the del profile.The plane inclined of del profile will have (1,1,1) direction then, and as shown in Figure 7, it shows the true picture by the semiconductor substrate of etchant etching.
With reference to figure 4, photoresist pattern 39 is removed.
The profile of etched semiconductor substrate 30 is by being used to make the marginal portion round chemical dry etching process of change of STI33 become round.
Nitride layer 41 with big refractive index is stacked on the semiconductor substrate 30 that becomes circle.Chemico-mechanical polishing is carried out on nitride 41 to form inner micro-lens 41.
With reference to figure 5, insulation interbed 34 forms on the semiconductor substrate 30 that comprises inner micro-lens 41.
The metal level (not shown) can form then patternable on the interbed 34 to form metal wire 35 in insulation.In one exemplary embodiment of the present invention, the technology that forms the insulation interbed 34 and first metal wire 35 repeats several times to form the insulation interbed 34 and first metal wire 35.Therefore, insulation interbed 34 is deposited on first metal wire 35.Color-filter layer 44 forms on the insulation interbed 34 of deposition.
Device protecting layer 45 can be an insulating barrier, is deposited on the color-filter layer 44 to avoid making moist or being subjected to physical shock with the protection transducer.Then, lenticule 46 forms on device protecting layer 45.
In another embodiment of the present invention, in order further to improve the light intensity that is incident on the photodiode by reducing focal length, inner micro-lens is by adhering to the oxide-coated silicon layer in insulation on the interbed and the accompanying silicon layer of etching forms, rather than direct etching semiconductor substrate.This is explained in detail with reference to figure 7-13.
With reference to figure 7, a plurality of epitaxial loayer (not shown) can form on semiconductor substrate 50 and a plurality of photodiode forms in photodiode area 52.Epitaxial loayer and photodiode form technology with explained with reference to figure 2 similar.The first insulation interbed 54 deposits on epitaxial loayer.
The first metal layer (not shown) can form then patterning on the interbed 54 to form first metal wire 55 in first insulation.In one exemplary embodiment of the present invention, the technology that forms the insulation interbed 54 and first metal wire 55 repeats several times to form the insulation interbed 54 and first metal wire 55.Therefore, insulation interbed 54 is deposited on first metal wire 55.STI (shallow trench isolation from) layer 53 is illustrated.
With reference to figure 8, silicon layer 57 is attached on the first insulation interbed 54.The top and bottom surface of silicon layer 57 can apply with thermal oxide layer 56 respectively.
With reference to figure 9, photoresist is coated on the thermal oxide layer 56.Expose and be developed in and carry out on the photoresist to form photoresist pattern 59, the part of the thermal oxide layer 56 on the exposure photodiode area 52.Silicon layer 57 is attached to the first insulation interbed 54 by the technology that is used to make SOI (silicon-on-insulator) wafer.
With reference to Figure 10, use photoresist pattern 59 on silicon layer 57, to carry out wet etching by etchant as mask.Photoresist pattern 59 is removed then.Figure 10 shows the enlarged drawing of etched silicon layer 57.
In the wet etching that uses etchant, the etching degree changes according to crystallization direction.Therefore, preferably use (1,0,0)-silicon layer as silicon layer 57 so that have the del profile.The clinoplain of del profile has (1,1,1) direction.
With reference to Figure 11, the oxide skin(coating) 56 on the top surface of silicon layer 57 can be removed.
The profile of silicon layer 57 is by being used to make the marginal portion of STI 53 become the chemical dry etching process of circle and become round as lens.
With reference to Figure 12, the nitride layer 60 with big refractive index is stacked on the silicon layer 57 that becomes circle.
Chemico-mechanical polishing is carried out on nitride to form inner micro-lens 60.
With reference to Figure 13, the second insulation interbed 62 forms on the semiconductor substrate 50 that comprises inner micro-lens 60.
The second metal level (not shown) can form on the second insulation interbed 62, and then patterning to form second metal wire 63.In one exemplary embodiment of the present invention, the technology that forms the second insulation interbed 62 and second metal wire 63 repeats several times to form the second insulation interbed 62 and second metal wire 63.Therefore, the second insulation interbed 62 is deposited on second metal wire 63.
Color-filter layer 64 forms on the second insulation interbed 62 of deposition.
Device protecting layer 65 can be an insulating barrier, is deposited on the color-filter layer 64 to avoid making moist or being subjected to physical shock with the protection transducer.Lenticule 66 forms on device protecting layer 65.
Figure 14 is the simulation result figure of the location tracking of correlation technique and cmos image sensor of the present invention.In (A) of Figure 14, be illustrated according to the location tracking simulation result of the cmos image sensor of correlation technique.In (B) of Figure 14, be illustrated according to the location tracking simulation result of cmos image sensor of the present invention.
With reference to Figure 14, the light intensity that gathers according to the photodiode of the cmos sensor with inner micro-lens of the present invention is better than the light intensity that gathers according to the photodiode that has lenticular cmos sensor on top layer of correlation technique.
Correspondingly, the invention provides following effect or advantage.
According to since the dependence of the focal length of the increase that causes of height integrated circuit can reduce.Particularly when light was incident on the photodiode, inner micro-lens and the lenticule that is provided on the top layer had compensated because the light loss that film interference or diffraction generation are caused.Therefore, the sensing ability obtains increasing to improve picture quality.
In addition, interior lens forms by the silicon layer that etching is attached to the insulation interbed, to reduce focal length.Therefore, the present invention can further improve the light intensity that is incident on the photodiode.
It will be apparent to those skilled in the art that under the situation that does not deviate from the spirit and scope of the present invention and can carry out various modifications and variations.Therefore, mean if to modifications and variations of the present invention in appended claim and equivalent scope thereof, the present invention covers described modifications and variations.
Claims (14)
1. a cmos image sensor comprises:
A plurality of photoelectric diodes on semiconductor substrate;
A plurality of inner micro-lens on described a plurality of photoelectric diodes;
Insulation interbed on described a plurality of inner micro-lens;
A plurality of metal wires in described insulation interbed;
Device protecting layer on described insulation interbed; And
A plurality of lenticules on described device protecting layer.
2. the described cmos image sensor of claim 1, wherein said a plurality of inner micro-lens provide in described semiconductor substrate to correspond respectively to described a plurality of photoelectric diode.
3. the described cmos image sensor of claim 2, wherein said semiconductor substrate is formed by the silicon that has the del profile owing to the etching degree, and described etching degree changes according to the crystallization direction when the use etchant etching.
4. the described cmos image sensor of claim 3, wherein said semiconductor substrate comprise having the silicon of crystalline texture for (1,0,0).
5. cmos image sensor comprises:
A plurality of photoelectric diodes on semiconductor substrate;
The first insulation interbed on described a plurality of photoelectric diodes;
First metal wire in the described first insulation interbed;
A plurality of inner micro-lens on the described first insulation interbed;
The second insulation interbed on described a plurality of inner micro-lens;
Second metal wire in the described second insulation interbed;
Device protecting layer on the described second insulation interbed; And
A plurality of lenticules on described device protecting layer.
6. the described cmos image sensor of claim 5 further comprises the silicon layer that is attached to the described first insulation interbed, and wherein said a plurality of inner micro-lens form in described silicon layer, with corresponding respectively with described a plurality of photoelectric diodes.
7. the described cmos image sensor of claim 6, wherein said silicon layer is made of the silicon that has the del profile owing to the etching degree, and described etching degree changes according to the crystallization direction when the use etchant etching.
8. the described cmos image sensor of claim 7, wherein said semiconductor substrate comprise having the silicon of crystalline texture for (1,0,0).
9. method of making cmos image sensor comprises:
On semiconductor substrate, form a plurality of photoelectric diodes;
On described a plurality of photoelectric diodes, form a plurality of inner micro-lens;
On described a plurality of inner micro-lens, alternately form insulation interbed and metal wire, thereby on described metal wire, form described insulation interbed;
On described insulation interbed, form device protecting layer; And
On described device protecting layer, form a plurality of lenticules.
10. the described method of claim 9 wherein forms a plurality of inner micro-lens and comprises:
On described semiconductor substrate, form the photoresist pattern with the zone of exposure corresponding to described a plurality of photoelectric diodes;
On described semiconductor substrate, carry out wet etching to form depression by using described photoresist pattern as mask; And
Form nitride layer comprising on the described semiconductor substrate of described depression.
11. the described method of claim 10, the wherein said step that is recessed to form comprises:
Produce the del profile by on semiconductor substrate, carrying out described wet etching; And
Make described del profile become circle by chemical dry ecthing to form each described depression.
12. a method of making cmos image sensor comprises:
On semiconductor substrate, form a plurality of photoelectric diodes;
Thereby on described first metal wire, forms described first interbed that insulate alternately forming first insulation interbed and first metal wire on described a plurality of photoelectric diodes;
On the described first insulation interbed, form a plurality of inner micro-lens;
Thereby on described second metal wire, forms described second interbed that insulate alternately forming second insulation interbed and second metal wire on described a plurality of inner micro-lens;
On the described second insulation interbed, form device protecting layer; And
On described device protecting layer, form a plurality of lenticules.
13. the described method of claim 12 wherein forms a plurality of inner micro-lens and comprises:
Adhere to silicon layer on the described first insulation interbed, wherein oxide skin(coating) is coated in respectively on the top and bottom surface of described silicon layer;
On described silicon layer, form the photoresist pattern with the zone of exposure corresponding to described a plurality of photoelectric diodes;
Form depression by the wet etching that uses described photoresist pattern on described silicon layer, to carry out as mask; And
Form nitride layer comprising on the described semiconductor substrate of described depression.
14. the described method of claim 13 wherein forms depression and comprises:
Produce the del profile by on described silicon layer, carrying out wet etching;
Remove oxide skin(coating) from the top surface of described silicon layer; And
Make described del profile become circle by chemical dry ecthing to form each described depression.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040116424A KR100649010B1 (en) | 2004-12-30 | 2004-12-30 | CMOS image sensor and method of manufacturing the same |
| KR1020040116425 | 2004-12-30 | ||
| KR1020040116424 | 2004-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1819245A true CN1819245A (en) | 2006-08-16 |
| CN100468758C CN100468758C (en) | 2009-03-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200510137608XA Expired - Fee Related CN100468758C (en) | 2004-12-30 | 2005-12-26 | CMOS image sensor and fabricating method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100649010B1 (en) |
| CN (1) | CN100468758C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987422A (en) * | 2018-07-27 | 2018-12-11 | 深圳阜时科技有限公司 | Imaging sensor and its manufacturing method, identity recognition device and equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110083936A (en) * | 2010-01-15 | 2011-07-21 | 삼성전자주식회사 | A unit picture element including micro-lens for refracting photons, back-side illumination cmos image sensor including the unit picture element and a generating method for the unit picture element |
-
2004
- 2004-12-30 KR KR1020040116424A patent/KR100649010B1/en not_active IP Right Cessation
-
2005
- 2005-12-26 CN CNB200510137608XA patent/CN100468758C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987422A (en) * | 2018-07-27 | 2018-12-11 | 深圳阜时科技有限公司 | Imaging sensor and its manufacturing method, identity recognition device and equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100468758C (en) | 2009-03-11 |
| KR20060077534A (en) | 2006-07-05 |
| KR100649010B1 (en) | 2006-11-27 |
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