CN1817562A - Polishing method of lithium aluminate wafer - Google Patents
Polishing method of lithium aluminate wafer Download PDFInfo
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- CN1817562A CN1817562A CN 200610024584 CN200610024584A CN1817562A CN 1817562 A CN1817562 A CN 1817562A CN 200610024584 CN200610024584 CN 200610024584 CN 200610024584 A CN200610024584 A CN 200610024584A CN 1817562 A CN1817562 A CN 1817562A
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- 238000005498 polishing Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 26
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 71
- 230000007935 neutral effect Effects 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000004922 lacquer Substances 0.000 claims 1
- 230000000007 visual effect Effects 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 35
- 235000012431 wafers Nutrition 0.000 abstract description 30
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- 229910001651 emery Inorganic materials 0.000 abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052593 corundum Inorganic materials 0.000 description 7
- 239000010431 corundum Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910010093 LiAlO Inorganic materials 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
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Abstract
一种铝酸锂晶片的抛光方法，包括下列步骤：将提拉法生长的铝酸锂晶体，用内圆切割机将其切割成一定厚度的晶片；将此晶片放入浓度为78－80％的盐酸或者硝酸中，升温至80－100℃，保温15－30分钟，取出用氮气吹干，用大视场显微镜观察晶片正反面腐蚀坑的情况，选择腐蚀坑少的一面作为下一步的抛光面；将晶片的待抛光面放在胶盘上，首先选用氧化铝粉对其进行粗磨，粗抛，达到表面平均粗糙度为5－10nm的晶面；对晶面进行精抛，用pH＝8－9的SiO2抛光液，抛光时间为1－3小时，获得表面平均粗糙度为1－2nm的晶面；采用中性金刚砂液，对此晶面继续抛光，抛光时间1.5－2.5小时，可以得到表面平均粗糙度优于0.2nm的晶面的铝酸锂晶片。A method for polishing a lithium aluminate wafer, comprising the following steps: cutting the lithium aluminate crystal grown by the pulling method into wafers of a certain thickness with an internal circle cutting machine; putting the wafer into a wafer with a concentration of 78-80% In hydrochloric acid or nitric acid, heat up to 80-100°C, keep it warm for 15-30 minutes, take it out and blow it dry with nitrogen, observe the corrosion pits on the front and back of the wafer with a large-field microscope, and select the side with less corrosion pits as the next step of polishing surface; put the surface of the wafer to be polished on the rubber plate, first choose alumina powder for rough grinding and rough polishing, and achieve a crystal surface with an average surface roughness of 5-10nm; finely polish the crystal surface, use pH = 8-9 SiO 2 polishing liquid, the polishing time is 1-3 hours, and the crystal plane with an average surface roughness of 1-2nm is obtained; the neutral emery liquid is used to continue polishing the crystal plane, and the polishing time is 1.5-2.5 hours , a lithium aluminate wafer with a crystal face whose average surface roughness is better than 0.2nm can be obtained.
Description
技术领域technical field
本发明涉及铝酸锂，特别是一种铝酸锂晶片的抛光方法。The invention relates to lithium aluminate, in particular to a polishing method for a lithium aluminate wafer.
背景技术Background technique
近年来，蓝绿光发光二极管、激光二极管及其相关器件以其巨大市场应用前景成为研究热点，其中以GaN基系列材料的研究最为突出。目前，GaN基蓝绿光发光二极管(简称为LED)已实现商品化。在1997年，Nichia公司利用GaN研制的蓝光激光二极管(简称为LD)连续工作的寿命已超过10000小时。但是目前LED和LD的发光效率和寿命都难以得到进一步的提高，这主要是因为膜与衬底的晶格失配和热失配导致制备工艺的复杂化和巨大的应力引起的高缺陷密度。为了解决这个问题，人们发明了很多技术，如侧向外延技术，缓冲层技术，图形衬底技术等。但是解决这个问题的根本方法还是要靠同质外延。GaN体单晶的生长因其蒸汽压过高而存在很大的技术困难，特别是大块的GaN体单晶。因此，人们努力寻求可以取代GaN体单晶的GaN厚膜的制备方法，如目前用HVPE法制备GaN自支撑衬底已成为大尺寸高质量新型GaN基衬底制备的主流研究方向。但是，人们在常用的衬底(Sapphire，SiC等)上制备GaN基厚膜，都因应力问题出现不同程度的开裂现象，难以获得实用化的GaN自支撑衬底。γ-LiAlO2与Sapphire相比，与GaN之间的晶格失配小一个数量级，更重要的是近年来在γ-LiAlO2(100)面上成功获得了无极化的M面GaN薄膜(参见Nature.，2000，406：865)。以上优点使得γ-LiAlO2成为制备GaN厚膜首选材料。同时γ-LiAlO2硬度不高，且易被酸腐蚀，很容易将其上GaN厚膜剥落，获得自支撑GaN衬底。In recent years, blue-green light-emitting diodes, laser diodes and related devices have become research hotspots due to their huge market application prospects, among which the research on GaN-based series materials is the most prominent. Currently, GaN-based blue-green light-emitting diodes (abbreviated as LEDs) have been commercialized. In 1997, the continuous working life of the blue laser diode (LD for short) developed by Nichia Corporation using GaN exceeded 10,000 hours. However, the luminous efficiency and lifetime of LEDs and LDs are difficult to be further improved at present, mainly because the lattice mismatch and thermal mismatch between the film and the substrate lead to the complexity of the preparation process and the high defect density caused by huge stress. In order to solve this problem, many technologies have been invented, such as lateral epitaxy technology, buffer layer technology, graphic substrate technology and so on. But the fundamental way to solve this problem still depends on homogeneous extension. The growth of GaN bulk single crystals has great technical difficulties due to its high vapor pressure, especially bulk GaN bulk single crystals. Therefore, people are trying to find a method for preparing GaN thick films that can replace GaN bulk single crystals. For example, the preparation of GaN self-supporting substrates by HVPE has become the mainstream research direction for the preparation of large-scale and high-quality new GaN-based substrates. However, when people prepare GaN-based thick films on commonly used substrates (Sapphire, SiC, etc.), cracking occurs to varying degrees due to stress problems, and it is difficult to obtain practical GaN self-supporting substrates. Compared with Sapphire, γ-LiAlO 2 has an order of magnitude smaller lattice mismatch with GaN. More importantly, in recent years, non-polarized M-plane GaN films have been successfully obtained on the γ-LiAlO 2 (100) surface (see Nature., 2000, 406:865). The above advantages make γ-LiAlO 2 the preferred material for preparing GaN thick films. At the same time, the hardness of γ-LiAlO 2 is not high, and it is easy to be corroded by acid, so it is easy to peel off the thick GaN film on it to obtain a self-supporting GaN substrate.
但是铝酸锂晶体衬底的极性和水解性严重地影响了它的抛光质量，表现为表面平均粗糙度优于0.2nm晶片难以得到[参见J.Vac.Sci.Technol.B.，2003，21(4)：1350]，目前国外公司(美国、德国)对其抛光进行了一定的研究，但是都难以突破表面粗糙度优于0.2nm的难关。However, the polarity and hydrolysis of the lithium aluminate crystal substrate have seriously affected its polishing quality, and it is difficult to obtain a wafer with an average surface roughness better than 0.2nm [see J.Vac.Sci.Technol.B., 2003, 21(4): 1350], at present foreign companies (USA, Germany) have carried out some research on its polishing, but it is difficult to break through the difficulty that the surface roughness is better than 0.2nm.
发明内容Contents of the invention
本发明目的是为了获得表面平均粗糙度低于0.2nm的铝酸锂晶片，提供一种铝酸锂晶片抛光方法，从而在其上制备出高质量的无极性发光二极管。The object of the present invention is to provide a lithium aluminate wafer polishing method in order to obtain a lithium aluminate wafer with an average surface roughness lower than 0.2nm, thereby preparing a high-quality non-polar light-emitting diode thereon.
本发明铝酸锂晶片的抛光方法的工艺流程如下：The technological process of the polishing method of lithium aluminate wafer of the present invention is as follows:
<1>将提拉法生长的铝酸锂晶体，用内园切割机根据需要将其切割成一定厚度的晶片；<1> Cut the lithium aluminate crystal grown by the pulling method into wafers of a certain thickness with an inner circle cutting machine as required;
<2>将此晶片放入浓度为78％的盐酸或者硝酸中，升温至80-100℃，保温15-30分钟，取出用氮气吹干，用大视场显微镜观察晶片正反面腐蚀坑的情况，选择腐蚀坑较少的一面作为下一步的抛光面；<2>Put the wafer in hydrochloric acid or nitric acid with a concentration of 78%, raise the temperature to 80-100°C, keep it warm for 15-30 minutes, take it out and dry it with nitrogen, and observe the corrosion pits on the front and back of the wafer with a large-field microscope , select the side with less corrosion pits as the polishing surface in the next step;
<3>将晶片的待抛光面放在胶盘上，选用氧化铝粉对其进行粗磨，粗抛，达到表面平均粗糙度为5-10nm的晶面；<3> Put the surface of the wafer to be polished on the rubber plate, use alumina powder to roughly grind it, and roughly polish it to achieve a crystal surface with an average surface roughness of 5-10nm;
<4>对晶面进行精抛，用PH＝8-9的SiO2抛光液，抛光时间为1-3小时，获得表面平均粗糙度为1-2nm的晶面；<4> Perform fine polishing on the crystal surface, use SiO 2 polishing solution with PH=8-9, and the polishing time is 1-3 hours, to obtain a crystal surface with an average surface roughness of 1-2nm;
<5>采用中性金刚砂液，对此晶面继续抛光，抛光时间为1.5-2.5小时，得到表面平均粗糙度优于0.2nm的晶面的铝酸锂晶片。<5> Use neutral emery liquid to continue polishing the crystal face for 1.5-2.5 hours to obtain a lithium aluminate wafer with a crystal face whose average surface roughness is better than 0.2nm.
本发明的优点是通过化学腐蚀法选取适宜的晶面，然后利用铝酸锂的水解性能来抛光晶片，方法独特、简单，但效果明显。The invention has the advantages of selecting a suitable crystal face by chemical etching, and then using the hydrolysis performance of lithium aluminate to polish the wafer. The method is unique and simple, but the effect is obvious.
具体实施方式Detailed ways
下而结合实施例对本发明作进一步说明。The present invention will be further described below in conjunction with embodiment.
实施例1：Example 1:
一种铝酸锂晶片的抛光方法，包括下列步骤：A polishing method for a lithium aluminate wafer, comprising the following steps:
<1>将提拉法生长的直径2英寸长80mm的铝酸锂晶体，用内园切割机将其切割成厚度0.5～1mm的晶片；<1> Cut the lithium aluminate crystal with a diameter of 2 inches and a length of 80 mm grown by the pulling method into wafers with a thickness of 0.5 to 1 mm with an inner circle cutting machine;
<2>将此晶片放入浓度为78％的盐酸或者硝酸中，升温至80℃，保温15分钟，取出用氮气吹干，用大视场显微镜观察晶片正反面腐蚀坑的情况，选择腐蚀坑少的一面作为下一步的抛光面；<2>Put the wafer in hydrochloric acid or nitric acid with a concentration of 78%, raise the temperature to 80°C, keep it warm for 15 minutes, take it out and dry it with nitrogen, observe the corrosion pits on the front and back of the wafer with a large-field microscope, and select the corrosion pits The less side is used as the polishing surface in the next step;
<3>将晶片的待抛光面放在胶盘上，选用氧化铝粉对其进行粗磨，粗抛，经过此工艺达到表面平均粗糙度为5nm的晶面；<3> Put the surface of the wafer to be polished on the rubber plate, use alumina powder to roughly grind it, and roughly polish it. After this process, the crystal surface with an average surface roughness of 5nm is achieved;
<4>对晶面进行精抛，用PH＝8的SiO2抛光液，抛光时间为2小时，获得表面平均粗糙度为1.4nm的晶面；<4> Carry out fine polishing to crystal surface, use the SiO2 polishing liquid of PH=8, polishing time is 2 hours, obtain the crystal surface with average surface roughness of 1.4nm;
<5>采用中性金刚砂液，对此晶面继续抛光，抛光时间2.5小时，得到表面平均粗糙度优于0.15nm的晶面的铝酸锂晶片。<5>Using a neutral emery liquid, continue to polish the crystal face for 2.5 hours to obtain a lithium aluminate wafer with a crystal face whose average surface roughness is better than 0.15nm.
实施例2：Example 2:
按照上述工艺流程中步骤将提拉法生长的直径2英寸长80mm的铝酸锂晶体，用内园切割机将其切割成厚度1mm的晶片，将此晶片放入盛有盐酸(浓度80％)的烧杯中，然后升温至100℃，保温30分钟；取出晶片，氮气吹干，在大视场显微镜观察晶片正反表面形貌，并选取腐蚀坑较少的晶面作为抛光晶面。对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为10nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为3小时，可以得到表面平均粗糙度为1.6nm的晶面，然后采用中性金刚砂抛光1.5小时可以得到表面平均粗糙度为0.18nm的晶面。According to the steps in the above-mentioned process flow, the lithium aluminate crystal with a diameter of 2 inches and a length of 80mm grown by the pulling method is cut into wafers with a thickness of 1mm with an inner circle cutting machine, and the wafers are placed in hydrochloric acid (80% concentration) Then raise the temperature to 100°C and keep it warm for 30 minutes; take out the wafer, blow it dry with nitrogen, observe the surface morphology of the front and back of the wafer under a large-field microscope, and select the crystal plane with fewer corrosion pits as the polished crystal plane. After coarse grinding and rough polishing of alumina powder, the crystal surface with an average surface roughness of 10nm is finely polished, and the SiO2 polishing solution with PH=8 is selected, and the polishing time is 3 hours, and the crystal surface with an average surface roughness of 1.6nm can be obtained. The crystal plane is then polished with neutral emery for 1.5 hours to obtain a crystal plane with an average surface roughness of 0.18 nm.
实施例3：Example 3:
具体方法如实施例1将晶片放入硝酸(浓度80％)中，升温至80℃，保温15min，吹干观察并选取腐蚀坑少的晶面作为抛光晶面。对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为10nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为3小时，可以得到表面平均粗糙度为1.6nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.18nm的晶面。The specific method is as in Example 1. Put the wafer into nitric acid (80% concentration), heat up to 80° C., keep it warm for 15 minutes, blow dry and observe, and select the crystal plane with few corrosion pits as the polished crystal plane. After coarse grinding and rough polishing of alumina powder, the crystal surface with an average surface roughness of 10nm is finely polished, and the SiO2 polishing solution with PH=8 is selected, and the polishing time is 3 hours, and the crystal surface with an average surface roughness of 1.6nm can be obtained. The crystal plane is then polished with neutral emery for 2 hours to obtain a crystal plane with an average surface roughness of 0.18 nm.
实施例4：Example 4:
具体方法如实施例2将晶片放入硝酸(浓度80％)中，升温至100℃，保温30min，吹干观察并选取腐蚀坑少的晶面作为抛光晶面。对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为10nm的晶面进行精抛，选取PH＝9的SiO2抛光液，抛光时间为3小时，可以得到表面平均粗糙度为1.6nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.18nm的晶面。The specific method is as in Example 2. Put the wafer into nitric acid (80% concentration), heat up to 100° C., keep it warm for 30 minutes, blow dry and observe, and select the crystal plane with few corrosion pits as the polished crystal plane. After coarse grinding and rough polishing of alumina powder, the crystal surface with an average surface roughness of 10nm is finely polished, and the SiO2 polishing solution with PH=9 is selected, and the polishing time is 3 hours, and the crystal surface with an average surface roughness of 1.6nm can be obtained. The crystal plane is then polished with neutral emery for 2 hours to obtain a crystal plane with an average surface roughness of 0.18 nm.
实施例5Example 5
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为7.5nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为2.5小时，可以得到表面平均粗糙度为1.8nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.19nm的晶面。Technological process is as embodiment 1, and it is characterized in that through aluminum oxide powder coarse grinding, rough polishing, the crystal face that surface average roughness is 7.5nm carries out fine polishing, selects the SiO of PH= 8 Polishing liquid, polishing time is 2.5 hours, A crystal plane with an average surface roughness of 1.8nm can be obtained, and then a crystal plane with an average surface roughness of 0.19nm can be obtained by polishing with neutral corundum for 2 hours.
实施例6Example 6
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为5nm的晶面进行精抛，选取PH＝9的SiO2抛光液，抛光时间为1小时，可以得到表面平均粗糙度为1.9nm的晶面，然后采用中性金刚砂抛光2.5小时可以得到表面平均粗糙度为0.17nm的晶面。Technological process is as embodiment 1, and the feature is that through alumina powder coarse grinding, rough polishing, the crystal face that surface average roughness is 5nm carries out fine polishing, chooses the SiO of PH= 9 Polishing fluid, polishing time is 1 hour, can A crystal plane with an average surface roughness of 1.9 nm was obtained, and then polished with neutral corundum for 2.5 hours to obtain a crystal plane with an average surface roughness of 0.17 nm.
实施例7Example 7
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为10nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为2小时，可以得到表面平均粗糙度为1.7nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.16nm的晶面。Technological process is as embodiment 1, and the characteristic is to pass through alumina powder rough grinding, rough polishing, the crystal face that surface average roughness is 10nm carries out fine polishing, chooses the SiO of PH= 8 Polishing liquid, polishing time is 2 hours, can A crystal plane with an average surface roughness of 1.7 nm was obtained, and then polished with neutral corundum for 2 hours to obtain a crystal plane with an average surface roughness of 0.16 nm.
实施例8Example 8
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为7.5nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为1.5小时，可以得到表面平均粗糙度为1.8nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.16nm的晶面。Technological process is as embodiment 1, and it is characterized in that through aluminum oxide powder rough grinding, rough polishing, the crystal face that surface average roughness is 7.5nm carries out fine polishing, selects the SiO of PH= 8 Polishing liquid, polishing time is 1.5 hours, A crystal plane with an average surface roughness of 1.8nm can be obtained, and then a crystal plane with an average surface roughness of 0.16nm can be obtained by polishing with neutral corundum for 2 hours.
实施例9Example 9
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为5nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为1.5小时，可以得到表面平均粗糙度为1.5nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.12nm的晶面。Technological process is as embodiment 1, and the feature is that through alumina powder coarse grinding, rough polishing, the crystal face that surface average roughness is 5nm carries out fine polishing, chooses the SiO of PH= 8 Polishing liquid, polishing time is 1.5 hours, can A crystal plane with an average surface roughness of 1.5 nm was obtained, and then polished with neutral corundum for 2 hours to obtain a crystal plane with an average surface roughness of 0.12 nm.
实施例10Example 10
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为10nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为2小时h，可以得到表面平均粗糙度为1.6nm的晶面，然后采用中性金刚砂抛光2小时h可以得到表面平均粗糙度为0.13nm的晶面。Technological process is as embodiment 1, and it is characterized in that through alumina powder rough grinding, rough polishing, the crystal face that surface average roughness is 10nm carries out fine polishing, selects the SiO of PH= 8 Polishing fluid, polishing time is 2 hours h, A crystal plane with an average surface roughness of 1.6 nm can be obtained, and then a crystal plane with an average surface roughness of 0.13 nm can be obtained by polishing with neutral corundum for 2 hours.
实施例11Example 11
工艺过程如实施例1，特点是对经过氧化铝粉粗磨，粗抛，表面平均粗糙度为7.5nm的晶面进行精抛，选取PH＝8的SiO2抛光液，抛光时间为1.75小时，可以得到表面平均粗糙度为1.6nm的晶面，然后采用中性金刚砂抛光2小时可以得到表面平均粗糙度为0.13nm的晶面。Technological process is as embodiment 1, and the feature is that through alumina powder coarse grinding, rough polishing, the crystal face that surface average roughness is 7.5nm carries out fine polishing, chooses the SiO of PH= 8 Polishing liquid, polishing time is 1.75 hours, A crystal plane with an average surface roughness of 1.6 nm can be obtained, and then a crystal plane with an average surface roughness of 0.13 nm can be obtained by polishing with neutral corundum for 2 hours.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN101954617B (en) * | 2009-07-20 | 2013-02-06 | 上海半导体照明工程技术研究中心 | Method for performing chemical mechanical polishing on lithium aluminate wafer |
| CN108081117A (en) * | 2017-11-29 | 2018-05-29 | 浙江工业大学 | A kind of lithium tantalate polishing method based on mild abrasives fixation grinding tool |
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| JP2787996B2 (en) * | 1992-03-02 | 1998-08-20 | 信越化学工業株式会社 | Method for producing lithium tetraborate single crystal |
| US5389194A (en) * | 1993-02-05 | 1995-02-14 | Lsi Logic Corporation | Methods of cleaning semiconductor substrates after polishing |
| US6218280B1 (en) * | 1998-06-18 | 2001-04-17 | University Of Florida | Method and apparatus for producing group-III nitrides |
| JP2006521984A (en) * | 2003-03-18 | 2006-09-28 | クリスタル フォトニクス，インコーポレイテッド | Method for fabricating a group III nitride device and the device so fabricated |
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| CN101954617B (en) * | 2009-07-20 | 2013-02-06 | 上海半导体照明工程技术研究中心 | Method for performing chemical mechanical polishing on lithium aluminate wafer |
| CN102263024A (en) * | 2011-07-18 | 2011-11-30 | 北京通美晶体技术有限公司 | Back side anticorrosion method of single side polishing wafer |
| CN108081117A (en) * | 2017-11-29 | 2018-05-29 | 浙江工业大学 | A kind of lithium tantalate polishing method based on mild abrasives fixation grinding tool |
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