CN1815828A - Terahertz laser pulse generator of semiconductor pump - Google Patents
Terahertz laser pulse generator of semiconductor pump Download PDFInfo
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- CN1815828A CN1815828A CN 200510006351 CN200510006351A CN1815828A CN 1815828 A CN1815828 A CN 1815828A CN 200510006351 CN200510006351 CN 200510006351 CN 200510006351 A CN200510006351 A CN 200510006351A CN 1815828 A CN1815828 A CN 1815828A
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Abstract
The generator includes pumping source, semiconductor laser of coupling cavity, and non-linear laser crystal places along optical path in sequence. Characters are that using pumping source pumps semiconductor laser of coupling cavity to generate two beams of laser in single mode. The two beams are coherent in time and space, and difference of wavelength in certain range. Difference frequency between the said two beams of laser carried inside non-linear laser crystal can obtain laser pulse in tera hertz. Comparing with former technique, the invention possesses advantages of long service time, small volume, stable capability, operating at room temperature, output in single mode etc. The invention is applicable to imaging object, environmental monitoring, medical diagnosis, mobile communication in broadband, and satellite communication etc.
Description
Technical field
The present invention relates to a kind of terahertz laser pulse generator, particularly relate to a kind of semiconductor pumped terahertz laser pulse generator.
Background technology
Terahertz (THz) laser pulse is the electromagnetic radiation of wavelength magnitude at millimeter.The appearance of THz laser pulse makes physical mechanism, detection technique and the application technical research of Terahertz (THz) radiation obtain development in an all-round way.The special performance of Terahertz (THz) super-broadband electromagnetic impulse has brought profound influence for fields such as communication, radar, electronic countermeasures, ELECTROMAGNETIC WEAPON, astronomy, medical imaging, Non-Destructive Testing, safety inspection.High power Terahertz (THz) ultrabroad band photoconductivity switching microwave source almost relates to all applications of information industry as core component.Because electromagnetic strong transmission capacity of THz and low emittance (harmless fully) to human body, Terahertz (THz) imaging technique can be used for checking food freshness, substitute medical x-ray scenograph, CT, and be used for chemical and biological weapons inspections such as airport security inspection and anthrax-bacilus or the like.
In technological field of biochemistry,, utilize research to biochemical reaction Terahertz (THz) the absorption spectra molecular motion condition information in can obtaining reacting so because the rotation absorption spectras of many large biological molecules is in Terahertz (THz) frequency range.Strong means are provided for further research biochemical reaction.Aspect astronomy, in the universe, a large amount of materials is sending Terahertz (THz) electromagnetic wave.The a large amount of molecule of charcoal, water, carbon monoxide, nitrogen, oxygen or the like can be surveyed in the THz frequency range.And some material use before Terahertz (THz) technology that a part can't be surveyed at all another part can only be at height above sea level very high or moonscape just can detect.In the communication technology, the wireless transmission speed that Terahertz (THz) is used to communicate by letter and can obtains 10GB/s, this is than more than thousand times of the fast hundreds of to of current super-broadband tech, and compares it with infrared ray with visible light and have high directivity and stronger cloud and mist penetration capacity simultaneously.This just makes THz communication to carry out high secret satellite communication with high bandwidth.Though owing to lack Terahertz (THz) transmitting antenna and source efficiently, make it also can't be in communications field commercialization, this will be solved by novel emitter and emission source.
The production method of Terahertz (THz) laser pulse mainly contains both at home and abroad: under the vertical electromagnetic field effect of arranging, semi-conducting material, it mainly is germanium (Ge) material, light, heavy hole in the valence band are realized population inversion under pumping, produce Terahertz (THz) laser, ((the Infrared Physics ﹠amp of T～4K) that must under utmost point low temperature, work of this system; Technology, Vol.44, pp.75-78,2003).
Above-mentioned Terahertz (THz) laser has following shortcoming (a) volume big, (b) complex structure, and (c) light path adjustment difficulty, thereby laser lost efficacy easily, (d) life-span weak point, (e) many longitudinal modes work, zlasing mode is poor, (f) need work under utmost point low temperature etc.
Summary of the invention
The objective of the invention is to overcome that existing Terahertz (THz) laser pulse generating divice volume is big, shortcomings such as complex structure, light path are adjusted difficulty, the life-span is short, the work of many longitudinal modes and low-temperature working, thereby provide a kind of relevant single-mode laser that produces two bundles by pumping source pumping coupled-cavity semiconductor lasers, this two bundles laser carries out difference frequency in nonlinear optical crystal, can obtain the single mode terahertz laser pulse.Because the phase places of the two bundle laser that coupled-cavity semiconductor lasers produces all be concerned with on time and space, and wavelength differs in certain limit, therefore only needs this two bundles laser is carried out difference frequency, can obtain Terahertz (THz) laser pulse and export.Terahertz (THz) the laser pulse good stability that this generator architecture is simple, volume is little, produce, single mode output and working and room temperature.
The object of the present invention is achieved like this:
The invention provides a kind of semiconductor pumped terahertz laser pulse generator, the coupled-cavity semiconductor lasers and the non-linear laser crystal that comprise pumping source, on light path, place successively, it produces by pumping source pumping coupled-cavity semiconductor lasers that two bundles all are concerned with on time and space and wavelength differs laser in certain limit, this two bundles laser carries out nonlinear frequency transformation in nonlinear optical crystal, can obtain terahertz laser pulse.
Described semiconductor pumped terahertz laser pulse generator, its described pumping source places the top of coupled-cavity semiconductor lasers, the pumping source two ends are connected with negative electricity with the positive pole of coupled-cavity semiconductor lasers respectively, laser exit place at coupled-cavity semiconductor lasers is provided with nonlinear optical crystal, and nonlinear optical crystal is positioned on the light path of laser.
Described semiconductor pumped terahertz laser pulse generator, its described pumping source is a constant-current source, or laser.
The two bundle single-mode lasers that described semiconductor pumped terahertz laser pulse generator, its described coupled-cavity semiconductor lasers send take place in time simultaneously, spatially are in same area.
The two bundle single-mode lasers that described semiconductor pumped terahertz laser pulse generator, its described coupled-cavity semiconductor lasers send have time and spatial coherence, satisfy the requirement that realizes collinear phase matching.
The two bundle single-mode lasers that described semiconductor pumped terahertz laser pulse generator, its described coupled-cavity semiconductor lasers send, wave-length coverage is in 0.65 micron～1.55 micrometer ranges.
Described semiconductor pumped terahertz laser pulse generator, its described nonlinear frequency transformation mode in nonlinear optical crystal is a difference frequency.
Described semiconductor pumped terahertz laser pulse generator is characterized in that: the scope that described coupled-cavity semiconductor lasers generation two bundle single-mode laser wavelength differ is 8 nanometers～50 nanometers.
Described semiconductor pumped terahertz laser pulse generator, its described nonlinear optical crystal comprises periodic polarized titanyl potassium phosphate, periodic polarized lithium tantalate, periodic polarized lithium niobate.
Described semiconductor pumped terahertz laser pulse generator, it is at room temperature worked.
A kind of semiconductor pumped THz laser pulse generator provided by the invention, shortcomings such as existing terahertz laser pulse generating means complex structure, multimode output, low-temperature working have been overcome, and volume is little, stable performance, can be widely used in fields such as object image-forming, environmental monitoring, medical diagnosis, radio astronomy, broadband mobile communication, satellite communication and military radar.
Superiority of the present invention: compared with prior art, the present invention has following advantage:
1, simple in structure.The present invention only comprises semiconductor coupling cavity lasing light emitter and two critical pieces of non-linear laser crystal, and since the surface launching of coupling cavity laser, characteristic such as the space divergence angle is little, spot size is little non-linear laser crystal and semiconductor coupling cavity lasing light emitter can be arranged very compactly.
2, volume is little.The semiconductor coupling cavity lasing light emitter size of typical case TO5 encapsulation is less than 5 * 5 * 5mm
3, the size of nonlinear optical crystal is at 5 * 5 * 1mm
3, adding the pumping source of semiconductor-on-insulator coupling cavity lasing light emitter, the volume of semiconductor pumped terahertz laser pulse generator of the present invention is far smaller than the volume of existing any a terahertz laser pulse generator.
3, stable performance.Semiconductor pumped terahertz laser pulse generator of the present invention need not externally-applied magnetic field and electric field, need not cryogenic refrigeration, need not to insert the frequency-selecting element into selecting single mode to indulge at laser optical path, so stable performance.
4, single mode output.The output mode of a kind of semiconductor pumped Terahertz (THz) laser pulse generator provided by the invention is determined by coupled-cavity semiconductor lasers, the coupled-cavity semiconductor lasers that the present invention uses has the two row laser characteristics of single mode operation respectively, this two row laser produces Terahertz (THz) the laser output of unique single mode through after the nonlinear crystal difference frequency.
5, working and room temperature.The components and parts coupled-cavity semiconductor lasers and the nonlinear optical crystal of a kind of semiconductor pumped its formation of Terahertz (THz) laser pulse generator provided by the invention can at room temperature be worked, and therefore semiconductor pumped Terahertz provided by the invention (THz) laser pulse generator is at working and room temperature.
6, the life-span is long.Because the life-span of a kind of semiconductor pumped Terahertz (THz) laser pulse generator provided by the invention is depended on coupled-cavity semiconductor lasers, the life-span of semiconductor laser is more than 100,000 hours usually; The life-span decision of life-span externally-applied magnetic field, extra electric field or high frequency, the high power pulsed laser sources etc. of the Terahertz that prior art provides (THz) laser pulse device, about thousand hours its life-spans.
This a kind of semiconductor pumped Terahertz provided by the invention (THz) laser pulse generator is simple in structure, working and room temperature, single mode output, and volume is little, stable performance, can be widely used in fields such as object image-forming, environmental monitoring, medical diagnosis, radio astronomy, broadband mobile communication, satellite communication and military radar.
Description of drawings
Fig. 1 is the structure and the index path of semiconductor pumped Terahertz (THz) laser pulse generator of the present invention;
Fig. 2 is the structure chart of the THz laser pulse generator of prior art.
Embodiment
The terahertz laser pulse generator that the present invention is semiconductor pumped, the coupled-cavity semiconductor lasers 2 and the non-linear laser crystal 3 that comprise pumping source 1, on light path, place successively, wherein, pumping source 1 places the top of coupled-cavity semiconductor lasers 2, pumping source 1 two ends are electrically connected with the anodal 2a and the negative pole 2e of coupled-cavity semiconductor lasers 2 respectively, laser exit place at coupled-cavity semiconductor lasers 2 is provided with nonlinear optical crystal 3, and nonlinear optical crystal 3 is positioned on the laser optical path.
The two bundle single-mode lasers that coupled-cavity semiconductor lasers 2 sends take place in time simultaneously, spatially are in same area.
The two bundle single-mode lasers that coupled-cavity semiconductor lasers 2 sends, wave-length coverage is in 0.65 micron～1.55 micrometer ranges.
The scope that coupled-cavity semiconductor lasers 2 generations two bundle single-mode laser wavelength differ is 8 nanometers～50 nanometers.
Nonlinear optical crystal 3 comprises periodic polarized titanyl potassium phosphate, periodic polarized lithium tantalate, periodic polarized lithium niobate.
Semiconductor pumped terahertz laser pulse generator of the present invention is at room temperature to work.
Produce two bundle laser by pumping source 1 pumping coupled-cavity semiconductor lasers 2, because the coupling of coupled-cavity semiconductor lasers 2 luminescent substances and light field, therefore the phase place of two of output bundle laser all is concerned with on time and space, satisfies the requirement that realizes collinear phase matching.
By the distance of two coupling cavitys of space adjusted, and then change the coupling power of two laser cavities, make this two bundles Wavelength of Laser differ within the specific limits (8nm～50nm).The mode of regulating the distance of two coupling cavitys has two kinds: for two laser cavities of vertical arrangement, in the material epitaxy growth course, change the thickness of material growth, thereby change the spacing of two laser cavities of vertically arranging; For two laser cavities of parallel arranged, in technology manufacturing process, change the interval between two laser cavities, and then change the distance of two coupling cavitys.
This two bundles laser carries out difference frequency for 3 li at nonlinear optical crystal, when two bundle Wavelength of Laser with and wavelength difference when satisfying following formula, can obtain behind the difference frequency wave-length coverage at 50 μ m to the terahertz laser pulse between the 500 μ m.
Δλ＝λ
1*λ
2/(50μm～500μm)
λ wherein
1, λ
1Be respectively two bundle Wavelength of Laser, Δ λ=λ
1-λ
1Be that two bundle Wavelength of Laser are poor.Unit is micron.
Embodiment 1:
Make a semiconductor pumped Terahertz (THz) laser pulse generator according to Fig. 1 below.Each parts is selected for use as follows:
Pumping source 1: An Jielun power supply, model: 8114A.
Coupled-cavity semiconductor lasers 2: impulse semiconductor laser, centre wavelength 1550nm, pulse duration is 100ns, frequency is 16.2 KHz, the about 30 μ W of average power, the two bundle Wavelength of Laser that produced are respectively 1550nm and 1558nm.
Nonlinear optical crystal 3:PPLN is of a size of 2 * 3 * 0.5mm
3, wherein the 3mm direction is an optical direction,
When pumping source 1 pumping coupled-cavity semiconductor lasers 2, the electric current that increases pumping source 1 makes coupled-cavity semiconductor lasers 2 outputs two bundle laser, average power is 30 microwatts, this two bundles Wavelength of Laser is respectively 1550nm and 1558nm, nonlinear optical crystal 3 is placed near coupled-cavity semiconductor lasers 2, wherein 2 * 2mm
2Be logical light face, wherein the spot diameter of two bundle laser in lbo crystal is about 10 microns, by the fine setting lbo crystal, can output wavelength is that 300 microns, frequency are about 1 microwatt of laser pulse, power output of 1THz.
Embodiment 2:
Make a semiconductor pumped Terahertz (THz) laser pulse generator according to Fig. 1 below, each parts is selected for use as follows:
Pumping source 1: model: pacify prompt logical sequence 8114A.
Coupled-cavity semiconductor lasers 2: impulse semiconductor laser, centre wavelength 980nm, pulse duration is less than 100ns, the about 50 μ W of average power.
Nonlinear optical crystal 3: select the PPKTP crystal for use,, be of a size of 3 * 4 * 0.3mm
3, wherein the 3mm direction is an optical direction,
When pumping source 1 pumping coupled-cavity semiconductor lasers 2, coupled-cavity semiconductor lasers 2 outputs two bundle laser, this two bundles Wavelength of Laser is respectively 980nm and 948nm, and nonlinear optical crystal 3 is placed near coupled-cavity semiconductor lasers 2, wherein 3 * 3mm
2Be logical light face, wherein the spot diameter of two bundle laser in the PPKTP crystal is about 0.02mm, by the fine setting ktp crystal, can output wavelength is that 30 microns, frequency are the laser pulse of 10THz.
Claims (10)
1. semiconductor pumped terahertz laser pulse generator, the coupled-cavity semiconductor lasers (2) and the non-linear laser crystal (3) that comprise pumping source (1), on light path, place successively, it is characterized in that: produce that two bundles all are concerned with and wavelength differs laser in certain limit on time and space by pumping source (1) pumping coupled-cavity semiconductor lasers (2), this two bundles laser carries out nonlinear frequency transformation in nonlinear optical crystal (3) lining, can obtain terahertz laser pulse.
2. semiconductor pumped terahertz laser pulse generator according to claim 1, it is characterized in that: described pumping source (1) places the top of coupled-cavity semiconductor lasers (2), pumping source (1) two ends are electrically connected with the positive pole (2a) and the negative pole (2e) of coupled-cavity semiconductor lasers (2) respectively, be provided with nonlinear optical crystal (3) at the laser exit place of coupled-cavity semiconductor lasers (2), nonlinear optical crystal (3) is positioned on the light path of laser (4).
3. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: described pumping source (1) is a constant-current source, or laser.
4. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: the two bundle single-mode lasers that described coupled-cavity semiconductor lasers (2) sends, take place simultaneously in time, and spatially be in same area.
5. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: the two bundle single-mode lasers that described coupled-cavity semiconductor lasers (2) sends have time and spatial coherence, satisfy the requirement that realizes collinear phase matching.
6. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: the two bundle single-mode lasers that described coupled-cavity semiconductor lasers (2) sends, wave-length coverage is in 0.65 micron～1.55 micrometer ranges.
7. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: described nonlinear frequency transformation mode in nonlinear optical crystal (3) lining is a difference frequency.
8. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: the scope that described coupled-cavity semiconductor lasers (2) generation two bundle single-mode laser wavelength differ is 8 nanometers～50 nanometers.
9. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: described nonlinear optical crystal (3) comprises periodic polarized titanyl potassium phosphate, periodic polarized lithium tantalate, periodic polarized lithium niobate.
10. semiconductor pumped terahertz laser pulse generator according to claim 1 is characterized in that: at room temperature work.
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| CN 200510006351 CN1815828A (en) | 2005-02-02 | 2005-02-02 | Terahertz laser pulse generator of semiconductor pump |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008080300A1 (en) * | 2006-12-31 | 2008-07-10 | Tsinghua University | Method and device for measuring terahertz time-domain spectroscopy |
| CN100438237C (en) * | 2006-09-29 | 2008-11-26 | 华东师范大学 | Broad band TH2 light generator |
| CN106159641A (en) * | 2016-09-05 | 2016-11-23 | 华讯方舟科技有限公司 | Carry generating means and the production method of the THz wave of orbital angular momentum |
-
2005
- 2005-02-02 CN CN 200510006351 patent/CN1815828A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100438237C (en) * | 2006-09-29 | 2008-11-26 | 华东师范大学 | Broad band TH2 light generator |
| WO2008080300A1 (en) * | 2006-12-31 | 2008-07-10 | Tsinghua University | Method and device for measuring terahertz time-domain spectroscopy |
| GB2457409A (en) * | 2006-12-31 | 2009-08-19 | Univ Tsinghua | Method and device for measuring terahertz time-domain spectroscopy |
| GB2457409B (en) * | 2006-12-31 | 2011-01-05 | Univ Tsinghua | Method and apparatus for measuring terahertz time-domain spectrum |
| CN106159641A (en) * | 2016-09-05 | 2016-11-23 | 华讯方舟科技有限公司 | Carry generating means and the production method of the THz wave of orbital angular momentum |
| US10541507B2 (en) | 2016-09-05 | 2020-01-21 | China Communication Technology Co., Ltd. | Generation device and generation method of terahertz waves with orbital angular momentum |
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