CN1815570A - Method for manufacturing magnetic recording medium - Google Patents
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- CN1815570A CN1815570A CN 200510131432 CN200510131432A CN1815570A CN 1815570 A CN1815570 A CN 1815570A CN 200510131432 CN200510131432 CN 200510131432 CN 200510131432 A CN200510131432 A CN 200510131432A CN 1815570 A CN1815570 A CN 1815570A
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Abstract
A method for manufacturing a magnetic recording medium is provided, which can manufacture a magnetic recording medium that includes a recording layer having a concavo-convex pattern and has a sufficiently flat surface. The method includes the steps of: forming an object to be processed including a recording layer having a predetermined concavo-convex pattern formed over a substrate and a first mask layer (temporary underlying material) formed at least on recording elements (convex portions) of the recording layer; depositing a filling material on the object to be processed to fill concave portions; removing a part of the filling material by dry etching to expose at least side faces of the first mask layer; and removing the first mask layer by an etching method in which an etching rate of the first mask layer is higher than that of the filling material to flatten a surface.
Description
Technical field
The present invention relates to a kind of manufacture method of magnetic recording media of the recording layer with relief pattern.
Background technology
Up to the present, magnetic recording medias such as hard disk, by improvement to the miniaturization of the magnetic particle that constitutes recording layer, the change of material, the miniaturization of magnetic head processing etc., realized significantly improving of area recording density, and wait in expectation and further improve area recording density from now on, but owing to the manufacturing limit of magnetic head, the diffusion in magnetic field, carry out recording of information mistakenly and problem such as crosstalk becomes obviously to track, thereby arrived the limit according to the raising of the area recording density of in the past modification method with adjacent other of track of record object.
To this,, discrete track medium or patterned media that relief pattern with regulation forms recording layer, formed the record key element as the protuberance of relief pattern have been proposed as the candidate of the magnetic recording media of the further raising that can realize area recording density.
On the other hand, magnetic recording medias such as hard disk, because existence is as if the big then hoverheight problem of unstable of magnetic head slider of concavo-convex degree on surface, so proposed to fill the magnetic recording media (for example with reference to TOHKEMY 2000-195042 communique) that writes down the recess between the key element and the surface of recording layer is carried out planarization with filling material.
The technology of carrying out planarization as the recess of the recording layer of filling relief pattern with filling material and to the surface of recording layer, known have a technology of utilizing demoulding (リ Off ト オ Off) method.Shown in one is for example following.At first, on substrate, be formed uniformly after continuous recording layer and the anticorrosive additive material, remove the anticorrosive additive material of the part suitable by exposure/development with the recess of relief pattern, and with anticorrosive additive material only to continuous recording layer in the suitable part of protuberance cover.Under this state, the part of exposing of continuous recording layer is carried out etching, and form the recording layer of relief pattern.Further, on recording layer and anticorrosive additive material, carry out film forming with filling material and fill the recess of recording layer with filling material.In addition, filling material forms with relief pattern according to the recording layer of relief pattern, and is deposited on the anticorrosive additive material.At last, by the organic solvent dissolution resist layer, and remove filling material on the anticorrosive additive material together with resist.Thus, filling material only remains in recess and makes have an even surface (for example with reference to the special fair 5-22291 communique of JP, TOHKEMY 2001-110050 communique).
But, filling material also by film forming to the side of anticorrosive additive material, this part with recess in the state that becomes one of filling material under, also may be residual after removing anticorrosive additive material.That is, filling material is not only filled the recess of relief pattern, also might form projection near the end of recess, thereby exists the surface not have the problem of abundant planarization.
In addition, if form anticorrosive additive material blocked up, then in the root portion of anticorrosive additive material side, filling material is difficult for film forming, thereby can suppress the formation of projection, but if form anticorrosive additive material blocked up, then exist the protuberance that is processed to the resist layer of relief pattern by exposure/development to become to collapse easily or the machining precision of recording layer under the degradation problem.
Summary of the invention
The present invention proposes in view of the above problems, and its purpose is to provide a kind of manufacture method of magnetic recording media, can make the abundant smooth magnetic recording media of recording layer and surface with relief pattern.
In the present invention, on the processed body that is formed with tentative base material on the protuberance of recording layer, fill with the filling material film forming after the recess, have than recess and selectivity is more promptly removed the dry-etching method of the tendency of protuberance by use, and remove unnecessary filling material, thereby can remove the filling material of the side that covers tentative base material expeditiously.Further, be higher than etching method, optionally remove tentative base material, and can make flattening surface the etch-rate of filling material by utilizing etch-rate to tentative base material.
Optionally remove the etching method of this tentative base material, preferably utilize the dry-etching method of reacting gas with the characteristic of removing tentative base material with tentative base material chemically reactive.So and since to unnecessary filling material remove and planarization (tentative base material remove) is all carried out with the dry-etching method, thereby with respect to and with dry process and wet process situation, more can significantly improve production efficiency.
In addition, also can be higher than dry-etching method by etch-rate, and in an operation, remove unnecessary filling material and tentative base material tentative base material to the etch-rate of filling material.Make flattening surface by operation of such usefulness, thereby can further enhance productivity.
Also have, the inventor thinks in invention process of the present invention at first, with having and selectivity is removed the such dry-etching of ion beam milling of the tendency of protuberance fast than recess, only remove the redundance that carries out the filling material of film forming according to the recording layer of relief pattern with relief pattern, just can make flattening surface, thereby in fact this method be tested.
But, only remove unnecessary filling material with ion beam milling, be difficult to the step difference on surface is fully reduced to the level of expectation, think that its reason is summarized as follows.
The dry-etching method though have the tendency that the protuberance on surface is removed fast than the recess selectivity, if also have the poor of width on the protuberance, then produce the poor of etch-rate, thereby than the wide protuberance of width, the narrow protuberance of width is removed fast.Here the width of said protuberance, be meant with protuberance top near the almost rectangular direction of short transverse on width in minimum width.
Magnetic recording media is divided into data area and servo area and uses, discrete track medium and patterned media etc. have the magnetic recording media of the recording layer of relief pattern, even the relief pattern of recording layer is roughly certain in the data area, but the relief pattern of data area is significantly different with the relief pattern of servo area.And the relief pattern of the recording layer in the servo area becomes corresponding to the situation of the complex pattern of servo-information pattern more.Therefore can produce the poor or step difference of surfaceness between data area and servo area or in the servo area.
With respect to this, if prepare the processed body that its recess constitutes with filling material and its protuberance constitutes with tentative base material, utilization is higher than dry-etching method to the etch-rate of the filling material that constitutes recess to the etch-rate of tentative base material, remove tentative base material, when can suppress recess processing so, to the whole protuberance that constitutes with tentative base material,, thereby can prevent to produce the poor or step difference of surfaceness no matter how its width all to remove at short notice.
That is,, can reach above-mentioned purpose according to following the present invention.
(1) manufacture method of kind magnetic recording media, it is characterized in that, comprise: processed system is made operation, makes the processed body with the tentative base material that forms on recording layer that forms with the relief pattern of stipulating on the substrate and the protuberance at least at this recording layer; The filling material film formation process, the filling material that film forming is different with aforementioned tentative base material on aforementioned processed body and fill the recess of aforementioned relief pattern; Filling material is removed operation, by the dry-etching method, at least a portion of the redundance that forms than the upper surface of the protuberance of aforementioned recording layer and in an opposite side with aforesaid base plate in the aforementioned filling material is removed, so that expose the side at least of the aforementioned tentative base material that forms on the protuberance of aforementioned recording layer; The planarization operation is higher than etching method to the etch-rate of aforementioned filling material by the etch-rate to aforementioned tentative base material, removes aforementioned tentative base material and makes flattening surface.
(2) according to the manufacture method of (1) described magnetic recording media, it is characterized in that, etching method in the aforementioned planarization operation is a dry-etching method of utilizing the reacting gas with the characteristic of removing this tentative base material with aforementioned tentative base material generation chemical reaction.
According to the manufacture method of (1) or (2) described magnetic recording media, it is characterized in that (3) aforementioned filling material is removed in the operation, from the direction that tilts with respect to the normal of aforementioned processed surface, to this processed body irradiation processing gas.
(4) according to the manufacture method of each described magnetic recording media in (1)～(3), it is characterized in that, remove in the operation at aforementioned filling material, adopt etch-rate to aforementioned tentative base material to be equal to or less than dry-etching method the etch-rate of aforementioned filling material.
(5) according to the manufacture method of each described magnetic recording media in (1)～(3), it is characterized in that, remove in the operation, adopt etch-rate to aforementioned tentative base material to be higher than dry-etching method the etch-rate of aforementioned filling material at aforementioned filling material.
(6) according to the manufacture method of (5) described magnetic recording media, it is characterized in that, do in the operation in aforementioned processed system, the filling material that will be lower than the etch-rate of aforementioned tentative base material with respect to the etch-rate that aforementioned filling material is removed the dry-etching of operation is removed the operation stopper film, is formed between aforementioned tentative base material and the aforementioned recording layer.
(7) according to the manufacture method of each described magnetic recording media in (4)～(6), it is characterized in that, remove in the operation at aforementioned filling material, adopt reacting gas with the characteristic that is removed with one of them selectivity generation chemical reaction of aforementioned filling material and aforementioned tentative base material.
(8) according to the manufacture method of each described magnetic recording media in (4)～(7), it is characterized in that, remove in the operation, use ion beam milling at aforementioned filling material.
(9) according to the manufacture method of each described magnetic recording media in (1)～(8), it is characterized in that, do in the operation in aforementioned processed system, to be lower than the planarization operation stopper film of the etch-rate of aforementioned tentative base material with respect to the etched etch-rate of aforementioned planarization operation, be formed between aforementioned tentative base material and the aforementioned recording layer.
(10) according to the manufacture method of each described magnetic recording media in (1)～(9), it is characterized in that, do in the operation in aforementioned processed system, with mask layer cover with the continuous recording layer that on aforesaid base plate, forms in the suitable part of protuberance of aforementioned relief pattern, and remove the part of exposing from aforementioned mask in the aforementioned continuous recording layer by etching method, form the recording layer of aforementioned relief pattern, and, the aforementioned mask layer that remains on the protuberance of this recording layer is used as at least a portion of aforementioned tentative base material.
(11) a kind of manufacture method of magnetic recording media, it is characterized in that, comprise: processed system is made operation, makes the processed body with the tentative base material that forms on recording layer that forms with the relief pattern of stipulating on the substrate and the protuberance at least at this recording layer; The filling material film formation process, the filling material that film forming is different with aforementioned tentative base material on aforementioned processed body and fill the recess of aforementioned relief pattern; The planarization operation, be higher than etching method by etch-rate, the redundance that forms than the upper surface of the protuberance of aforementioned recording layer and in an opposite side with aforesaid base plate in the aforementioned filling material and aforementioned tentative base material are removed and made flattening surface the etch-rate of aforementioned filling material to aforementioned tentative base material.
(12) according to the manufacture method of (11) described magnetic recording media, it is characterized in that, in aforementioned planarization operation, adopt to have and remove the reacting gas of the characteristic of this tentative base material with aforementioned tentative base material generation chemical reaction.
(13) according to the manufacture method of (11) or (12) described magnetic recording media, it is characterized in that, do in the operation in aforementioned processed system, to be lower than the planarization operation stopper film of the etch-rate of aforementioned tentative base material with respect to the etch-rate of the dry-etching of aforementioned planarization operation, be formed between aforementioned tentative base material and the aforementioned recording layer.
(14) according to the manufacture method of each described magnetic recording media in (11)～(13), it is characterized in that, in aforementioned planarization operation, from the direction that tilts with respect to the normal of aforementioned processed surface, to this processed body irradiation processing gas.
(15) according to the manufacture method of each described magnetic recording media in (11)～(14), it is characterized in that, do in the operation in aforementioned processed system, with mask layer cover with the continuous recording layer that on aforesaid base plate, forms in the suitable part of protuberance of aforementioned relief pattern, and remove the part of exposing from aforementioned mask in the aforementioned continuous recording layer by etching method, form the recording layer of aforementioned relief pattern, and, the aforementioned mask layer that remains on the protuberance of this recording layer is used as at least a portion of aforementioned tentative base material.
In addition, among the application, the meaning of said " with the recording layer of relief pattern formation " is, cut apart outside the recording layer that a plurality of record key elements of continuous recording layer constitute in order to the pattern of regulation, also comprise: continuous recording layer cut apart with the pattern part of regulation form, recording layer that record key element that a part is continuous constitutes; In addition, also comprise recording layer that for example as the recording layer of spiral helicine volute, on substrate a part forms continuously, be formed with protuberance and both continuous recording layers of recess.
In addition, among the application, the meaning of the term that said " etch-rate " is such is the processing capacity of each unit interval.
Also have, among the application, the meaning of the term that " magnetic recording media " is such is to be not limited to recording of information, only to utilize the hard disk, floppy disk (login trade mark), tape of magnetic etc. in reading, and also comprises and with the MO Magnetooptic recording mediums such as (Magneto Optical) of magnetic and light and and with the recording medium of magnetic and hot hot auxiliary type.
In addition, among the application, the meaning of the term that said " ion beam milling " is such is, that for example utilizes ion powder etc. carries out that Ionized gas shines processed body and the general name of removing the job operation of processing object object.
According to the present invention, can make the very smooth magnetic recording media of recording layer and surface with relief pattern.
Description of drawings
Fig. 1 is the sectional side view of structure of processing base substrate that schematically shows the processed body of first embodiment of the invention.
Fig. 2 is the sectional side view that schematically shows the structure of the magnetic recording media of processing this processed body and obtaining.
Fig. 3 is the process flow diagram of overview of the manufacturing process of this magnetic recording media of expression.
Fig. 4 schematically shows the sectional side view that is transferred the relief pattern on the resist layer of the base substrate of aforementioned processed body.
Fig. 5 is the sectional side view that schematically shows the shape of the aforementioned processed body of cutting apart continuous recording layer.
Fig. 6 is the sectional side view that schematically shows the shape of the aforementioned processed body that makes the filling material film forming.
Fig. 7 schematically shows by removing the sectional side view of shape that unnecessary filling material exposes the aforementioned processed body of first mask layer.
Fig. 8 schematically shows by removing other the sectional side view of example of shape that unnecessary filling material exposes the aforementioned processed body of first mask layer.
Fig. 9 schematically shows by removing other the sectional side view of example of shape that unnecessary filling material exposes the aforementioned processed body of first mask layer.
Figure 10 is the sectional side view of the shape of the aforementioned processome that has been flattened of the surface that schematically shows filling material and stopper film.
Figure 11 is the process flow diagram of overview of manufacturing process of the magnetic recording media of expression second embodiment of the invention.
Figure 12 is other the sectional side view of example of shape that schematically shows the tentative base material of embodiment of the present invention.
Embodiment
Below, with reference to accompanying drawing preferred implementation of the present invention is described in detail.
First embodiment of the invention relates to following method: process by the processing base substrate that forms the processed body 10 as shown in Figure 1 of continuous recording layer 20 grades on substrate 12, with continuous recording layer 20 as shown in Figure 2 be divided into a plurality of record key element 32A (protuberance of recording layer) and when forming the recording layer 32 of relief pattern of regulation, filling material 36 is filled into the recess (recess of relief pattern) 34 between the record key element 32A and makes flattening surface, and make magnetic recording media 30, it is characterized in that the operation of removing the operation of unnecessary filling material 36 and making flattening surface.For other operation, owing to the understanding to first embodiment is not particular importance, so it has been done suitable omission.
The processing base substrate of processed body 10, as shown in Figure 1, be the structure that forms by the order of basalis 14, antiferromagnetic layer 15, soft ferromagnetic layer 16, oriented layer 18, continuous recording layer 20, stopper film 35, first mask layer (tentative base material), 22, second mask layer 24, resist layer 26 on the substrate 12.
The material of substrate 12 is glass, Al
2O
3(aluminium oxide) etc.The thickness of basalis 14 is 2～40nm, and its material is Ta etc.The thickness of antiferromagnetic layer 15 is 5～50nm, and its material is PtMn alloy, RuMn alloy etc.The thickness of soft ferromagnetic layer 16 is 50～300nm, and its material is Fe (iron) alloy or Co (cobalt) alloy.The thickness of oriented layer 18 is 2～40nm, and its material is duplexer, MgO of non magnetic CoCr alloy, Ti, Ru, Ru and Ta etc.
Also having, among the application so-called " incident angle ", be the incident angle with respect to the surface of processed body, is that the meaning of the angle that forms of the central shaft with the surface of processed body and ion beam is used.For example, when the central shaft of ion beam and processed body surperficial parallel, incident angle is 0 °.
Magnetic recording media 30 is the disks in the discrete track type of perpendicular recording type, and recording layer 32, becomes the shape of relief pattern that aforementioned continuous recording layer 20 is divided into the record key element 32A of a plurality of concentric circles arcuations on diametric(al) with fine interval.Form stopper film 35 on the record key element 32A.Also have, on stopper film 35 and filling material 36, protective seam 38, lubricating layer 40 are formed in proper order by this.Also have, magnetic recording media 30 is in servo area, with the servo pattern formation recording layer 32 of regulation.
The material of filling material 36 is SiO of nonmagnetic substance
2(silicon dioxide).
The material of protective seam 38 is the hard carbon films that are called as diamond-like-carbon.Also have, said in this explanation " diamond-like-carbon (hereinafter referred to as " DLC ") " this term is with the non crystalline structure of carbon as major component, to show 2 * 10 in the formula of dimension hardness measurement
9～8 * 10
10The meaning of the material of the hardness about Pa is used.The material of lubricating layer 40 is PFPE (PFPE).
Below, according to process flow diagram shown in Figure 3, the job operation of processed body 10 is described.
At first, carry out processed system and make operation (S102).Specifically, process the processing base substrate of processed body 10 shown in Figure 1, make and to have the recording layer 32 that forms with relief pattern and to be formed at processed body 10 as first mask layer 22 (tentative base material) on the record key element 32A of the protuberance of recording layer 32.This processes base substrate, be that the order by basalis 14, antiferromagnetic layer 15, soft ferromagnetic layer 16, oriented layer 18, continuous recording layer 20, stopper film 35, first mask layer 22, second mask layer 24 forms by sputtering method on substrate 12, further, apply by spin-coating method and obtain resist layer 26.In addition, also can apply resist layer 26 by infusion process.
On the resist layer 26 of the processing base substrate of this processed body 10, utilize transfer device (omitting diagram), as shown in Figure 4, by the nano impression method, transfer printing includes contact hole and servo pattern and the suitable relief pattern of track pattern regulation, and by with O
2Or O
3Gas is removed the resist layer 26 of concave bottom as the reactive ion etching of reacting gas.In addition, can also be by resist layer 26 be exposed, develop, and form relief pattern.
Below, by the ion beam milling (incident angle is about 90 °) that utilizes Ar gas, remove second mask layer 24 of concave bottom.Further, by utilizing O
2Or O
3Reactive ion etching, remove first mask layer 22 of concave bottom.Further, by utilizing the ion beam milling of Ar gas, remove the stopper film 35 and the continuous recording layer 20 of concave bottom, and continuous recording layer 20 is divided into a plurality of record key element 32A.At this moment, on record key element 32A, make first mask layer 22 residual as fixing tentatively base material.Thus, as shown in Figure 5, can obtain to have the recording layer 32 that forms with relief pattern and be formed on processed body 10 as first mask layer 22 (tentative base material) on the record key element 32A of the protuberance of recording layer 32.
Then, carry out filling material film formation process (S104).Specifically, by the bias sputtering method, with filling material 36 at processed body 10 surface filmings.SiO
2Particle is deposited in the surface of processed body 10 equably, so the surface presents concaveconvex shape, but by processed body 10 is applied bias voltage, sputter gas is loaded by the direction to processed body 10 and the SiO that piles up has been finished in collision
2Thereby, to having finished the SiO that piles up
2A part carry out etching.This etching action is to have finish the SiO that piles up
2In, the tendency that the outstanding part selectivity more Zao than other parts removed is so surperficial concavo-convexly become even to a certain extent.By making filming function exceed etching action, and carry out film forming when suppressing surface concavo-convex.
Thus, as shown in Figure 6, with the concavo-convex shape that has to a certain degree suppressed the surface filling material 36 is formed film in the mode that covers recording layer 32, and in recess 34, fill filling material 36.Also have, in order to understand this first embodiment, emphasize to have given prominence to concaveconvex shape more among Fig. 6 than reality.
Then, carry out filling material and remove operation (S106).Specifically, by utilizing the ion beam milling of Ar gas, with 2 ° of irradiations of incident angle Ar gas, as shown in Figure 7, remove be formed in the filling material 36 record key element 32A upper surface with redundances substrate 12 opposite sides, to expose the side at least of first mask layer (tentative base material) 22.
The dry-etching method, selectivity is removed the tendency of protuberance fast owing to have than recess, so can remove the filling material 36 of the side that covers first mask layer (fixing tentatively base material) 22 expeditiously.Especially ion beam milling (comprising the reactive ion beam etching) since than recess and selectivity to remove the tendency of protuberance fast big, so planarization is effective.And if use the processing gas of the such inert gas of Ar gas as ion beam milling, then the anisotropic etching effect improves, and the tendency of therefore removing protuberance than recess fast becomes big, can further improve the planarization effect.
Also have, though the incident angle of Ar gas unqualified be 2 °, shown in the arrow among Fig. 7, preferred Ar gas shines processed body 10 from the direction that tilts with respect to processed body 10 normals to a surface.Particularly, preferably the incident angle of Ar gas is set in-10～15 ° scope with respect to the surface.By like this, can increase the tendency of removing protuberance than recess fast, and can improve with respect to etch-rate at the filling material 36 of first mask layer, 22 side film forming, in addition, can improve the planarization effect.
When the height of the upper surface of the filling material in the recess 34 36 is almost consistent with the height of stopper film 35 upper surfaces, ion beam milling is stopped.Thus, as shown in Figure 7, the unnecessary filling material 36 on the record key element 32A is removed substantially.Also have, first mask layer 22 though its end is removed fast than other parts, remains on the stopper film 35 with the state that covers stopper film 35 fully.Thereby record key element 32A is protected the ion beam milling effect that exempts from by first mask layer 22.Also have, even just in case the end of first mask layer 22 is removed the position of the upper surface of stopper film 35, record key element 32A is protected the effect that exempts from ion beam milling by stopper film 35.
As mentioned above, the height of filling material 36 upper surfaces in recess 34, when almost consistent with the height of stopper film 35 upper surfaces, first mask layer 22 is to be lower than SiO with respect to the etch-rate ion beam milling that utilizes Ar gas, C (the first mask layer 22=fixes tentatively base material) with the residual reason of the state that covers stopper film 35 fully
2The etch-rate of (filling material 36).With respect to this, by utilization have with the C chemical reaction remove C character reacting gas as processing use gas, can make both etch-rates identical, perhaps make its counter-rotating.For example, by utilizing Ar gas and O
2Or O
3The mixed gas of gas with gas and adjust their throughput ratio, can make both etch-rates identical as processing, perhaps makes its counter-rotating.
When the etch-rate with respect to C (the first mask layer 22=fixes tentatively base material) is higher than with respect to SiO
2During the etch-rate of (filling material 36), as shown in Figure 8, table on the filling material 36 in the recess 34 and height when almost consistent with the height of stopper film 35 upper surfaces, near the part in the end of first mask layer 22 is removed the upper surface up to stopper film 35.By like this, the filling material 36 that covers first mask layer, 22 sides is positively removed, thereby can realize high-precision planarization.
Like this; when making etch-rate with respect to the tentative base material of the first mask layer 22=be higher than etch-rate with respect to filling material 36; 32A exempts from etched effect for protection record key element, as this first embodiment, especially preferably covers the upper surface of record key element 32A with stopper film 35.
Also have, at this moment, if the etch-rate that stopper film 35 is removed the dry-etching of operation (S106) with respect to filling material is lower than the etch-rate of filling material 36, then can easily controls filling material and remove etched stopping in the operation (S106), and it is can improve machining precision, so even more ideal.In this first embodiment, the material of stopper film 35 is Ta, and the material of filling material 36 is SiO
2, and the etch-rate of Ta of removing the dry-etching of operation (S106) with respect to filling material is lower than SiO
2Etch-rate, so satisfy this condition.
Also have, when the etch-rate that makes both equates, as shown in Figure 9, when the height of 36 upper surfaces of the filling material in the recess 34 is almost consistent with the height of stopper film 35 upper surfaces, first mask layer 22, with the state that covers stopper film 35 fully and make its end portion thickness almost become 0 mode, remain on the stopper film 35.By like this, the filling material 36 that is covered with first mask layer, 22 sides is positively removed, and can protect record key element 32 to avoid the effect of ion beam.
Then, carry out planarization operation (S108).Specifically, be higher than SiO according to etch-rate C (the first mask layer 22=fixes tentatively base material)
2The etching method of the etch-rate of (filling material 36) as shown in figure 10, is removed first mask layer 22 and is made flattening surface.For example, can use O
2Or O
3Gas is as the reactive ion etching of reacting gas.
Thus, in the time of the processing of the filling material 36 of inhibition formation recess, remove first mask layer 22 that constitutes protuberance rapidly.Constitute first mask layer of protuberance, because its width and temporary generation etch-rate is poor, but the first whole at short notice mask layers is removed.Also have, remove operation (S106) afterwards at filling material, the part of residual unnecessary filling material 36 on first mask layer 22 sometimes, and this also is removed together with first mask layer 22.Also have, fill the filling material 36 of stopper film 35 and recess 34, the etch-rate in the planarization operation (S106) is lower than first mask layer 22, thus with these upper surface height almost the state of unanimity be held.That is, make flattening surface.Also have, record key element 32A is protected in order to avoid suffer etched effect by stopper film 35.
Like this, first mask layer, 22 double as are fixed tentatively base material, in planarization operation (S108), constitute protuberance first mask layer 22 (tentative base material) no matter its width what, and optionally be removed at short notice, thereby prevent the difference or the difference in height of surfaceness.
Below, form the protective seam 38 of DLC at the upper surface of record key element 32A and filling material 36 with the thickness of 1～5nm by the CVD method, and then, with the thickness of 1～2nm the lubricating layer 40 of PFPE is coated in (S110) on the protective seam 38 with infusion process.Thus, finish magnetic recording media shown in Figure 2 as described above 30.
As described above, in the filling material film formation process (S104), even filling material 36 film forming are in the side of first mask layer (tentative base material) 22, this part, by having the dry-etching method of removing the tendency of protuberance than the recess selectivity fast, remove in the operation (S106) at filling material and be removed.Also have, double as is fixed tentatively first mask layer 22 of base material and is remained in the part of the unnecessary filling material 36 on it, be higher than etching method by etch-rate, in planarization operation (S108), removed and make flattening surface by selectivity to the etch-rate of filling material 36 to first mask layer (tentative base material) 22.Make the surperficial smooth really of (writing down on the key element 32A) stopper film 35 and filling material 36 form protective seam 38, lubricating layer 40 afterwards like this, so magnetic recording media 30, the surface is very smooth, and can positively obtain good head gimbal characteristic.
Also have, in the planarization operation (S108), optionally remove the etching method of first mask layer 22, it is the dry-etching method of utilizing reacting gas with the character of removing first mask layer 22 with first mask layer, 22 chemical reactions, and remove appointing in operation (S106), the planarization operation (S108) at filling material and watch and all use the dry-etching method in the operation, so height when production efficiency is used dry process and wet process than simultaneously.
Also have, because of being formed with stopper film 35 on the record key element 32A, so remove in operation (S106) and the planarization operation (S108) at filling material, record key element 32A can be not etched, and its magnetic characteristic can not worsen yet.That is, the record of magnetic recording media 30, playback accuracy are good.
And then, because of being formed with stopper film 35 on the record key element 32A, so in planarization operation (S108), do not carry out etching and can positively remove filling material 36 on the stopper film 35 to writing down key element 32A, from this point, magnetic recording media 30 also has good record, playback accuracy.
Because of stopper film 35 is low with respect to the etched etch-rate of planarization operation (S108), thus attenuate thickness correspondingly, even stopper film 35 remains on the record key element 32A, but very little to the influence of record, playback accuracy.
Also have, in this first embodiment, remove in the operation (S106), adopted and utilized Ar gas or Ar and O at filling material
2Or O
3The ion beam milling of mixed gas, but also can adopt the ion beam milling that utilizes Kr (krypton), Xe (xenon) to wait other rare gas, and then, also can adopt and utilize for example H
2Gas or NH
3Gas or SF
6, CF
4(carbon tetrafluoride), C
2F
6The reactive ion beam etching of halogen reacting gas such as (hexafluoroization two carbon), utilize other the dry-etching such as reactive ion beam etching of the mixed gas of reacting gas and inert gas.
The etch-rate of first mask layer 22 is higher than the combination of material of the filling material of the etch-rate of filling material 36 being removed material, first mask layer 22 of dry etching method in the operation (S106), filling material 36, can lists the combination of table 1.
Table 1
| Filling material is removed the type of the ion beam milling of operation | Filling material | First mask layer (tentative base material) | The engraving method of planarization operation | |
| Processing gas | The incident angle of ion beam | |||
| O 2、O 3、H 2、 NH 3Gas | More than or equal to-10 ° smaller or equal to 90 ° (full angles) | SiO 2、Si、TaSi、TiN、 Ta、ITO、MgO、Nb、 ZrO 2、WO 2、Al 2O 3 | C | Utilize O 2、O 3、 H 2、NH 3The reactive ion etching of gas |
| Ar, Kr, Xe, Ne (inert gas) | More than or equal to-10 ° smaller or equal to 15 ° | TaSi、TiN、Ta、Nb、 ZrO 2、WO 2、Al 2O 3、 | ||
| Cu | SiO 2、Si、ITO、 MgO | Utilize the reactive ion etching of halogen gas | ||
| Cr | SiO 2、Si、ITO、 MgO、Al 2O 3 | |||
| SF 6、CF 4、C 2 F 6、CL 2、BCl 3(halogen gas) | More than or equal to-10 ° smaller or equal to 90 ° (full angles) | Cu、Cr | SiO 2、Si、TaSi、 TiN、Ta、 ITOMgO、 ZrO 2、WO 2、 Al 2O 3 | |
ITO: tin-doped indium oxide
On the other hand, the etch-rate of first mask layer is lower than the combination of the filling material of the etch-rate of filling material 36 being removed the material of dry etching method in the operation (S106), filling material 36, first mask layer 22, can lists the combination of following table 2.
Table 2
| Filling material is removed the type of the ion beam milling of operation | Filling material | First mask layer (tentative base material) | The engraving method of planarization operation | |
| Processing gas | The incident angle of ion beam | |||
| Ar, Kr, Xe, Ne (inert gas) | More than or equal to-10 ° smaller or equal to 15 ° | SiO 2、Si、ITO、 MgO | C | Utilize O 2、O 3The reactive ion etching of gas |
| Cu | TaSi、TiN、Ta、C、 ZrO 2、WO 2、Al 2O 3 | Utilize the reactive ion etching of halogen gas | ||
| Cr | TaSi、TiN、Ta、 ZrO 2、WO 2、 | |||
Also have, in table 1, the table 2, represented to be used alone the example of processing with gas, but can be by adjusting the incident angle of processing with gas, or the mixed gas by using such reacting gas of oxygen class gas or halogen gas and inert gas and adjust its mixture ratio, thereby can adjust etch-rate, maybe can adjust to the etch-rate of first mask layer 22 and to the magnitude relationship of the etch-rate of filling material 36, and can make to the etch-rate of first mask layer 22 with to the etch-rate of filling material 36 much at one.
Also have, in this first embodiment, the material of filling material 36 is SiO
2, the material of first mask layer (tentative base material) 22 is C, also has, planarization operation (S108) is with O
2Or O
3Gas is as reacting gas, and use etch-rate to first mask layer 22 to be higher than reactive ion etching to the etch-rate of filling material 36, but, if select etch-rate to first mask layer 22 to be higher than combination, so the material of filling material 36, the material and the etch species of first mask layer (tentative base material) 22 be not particularly limited to the etch-rate of filling material 36.For example, can adopt other oxide, TiN nitride such as (titanium nitrides), Ta (tantalum), other nonmagnetic substances such as TaSi, Si as filling material 36.Also have,, also can adopt soft magnetic material as the material of filling material 36 according to purposes.In addition, the material as first mask layer (tentative base material) 22 also can adopt metal material and photo anti-corrosion agent material etc.Also have,, can adopt H as etch species
2Gas or NH
3Gas or halogen gas are as the dry-etching and the Wet-type etching of reacting gas.As the material of filling material 36, first mask layer 22, the dry etching method of planarization operation (S108), the Ideal Match example is charged to above-mentioned table 1 and table 2 simultaneously.
Below, describe for second embodiment of the present invention.
Shown in the process flow diagram of Figure 11, this second embodiment, it is characterized in that, with respect to aforementioned first embodiment is to remove operation (S106) and these two operations of planarization operation (8108) by filling material to remove unnecessary filling material 36 and first mask layer 22 (tentative base material), and this second embodiment is that only (S202 removes unnecessary filling material 36 and first mask layer (fixing tentatively base material) 22 by the planarization operation.For other operation, because of identical with aforementioned first embodiment, the Therefore, omited explanation.
In the planarization operation (S202) of this second embodiment, as above-mentioned shown in Figure 6, filling material 36 is being carried out film forming and filling under the state of recess 34, utilization has with first mask layer 22 (tentative base material) chemical reaction removes the reacting gas of the character of first mask layer, and be higher than dry-etching method, and remove the redundance and first mask layer 22 of filling material 36 and make the surface become smooth the etch-rate of filling material 36 by etch-rate to first mask layer 22.
As such dry-etching method, for example, can enumerate Ar gas and O
2Or O
3The mixed gas of gas is as the reactive ion beam etching of processing with gas.By adjusting the flow rate ratio of mixed gas, can regulate the etch-rate of the filling material 36 and first mask layer 22.Specifically, by with Ar gas and O
2The ratio of gas is transferred to 3 (Ar): 2 (O
2) about, or increase O again than this ratio
2Ratio, then with to SiO
2Etch-rate compare, more can improve etch-rate to C.And according to the incident angle of processing with gas, etch-rate has change a little.
The height of filling material 36 upper surfaces in recess 34 when almost consistent with the height of stopper film 35 upper surfaces, stops dry-etching.Thus, shown in Figure 10 as described above, remove unnecessary filling material and first mask layer (tentative base material) 22 on the record key element 32A fully and make and have an even surface.
Also have, in the of short duration time after first mask layer (tentative base material) 22 on record key element 32A is removed fully, adjust first mask layer (tentative base material) 22 the thickness and the film forming thickness of filling material 36 that remain on the record key element 32A in advance, so that the upper surface of the filling material 36 of filling recess is almost consistent with the upper surface of stopper film 35.
If be lower than the etch-rate of filling material 36, can easily control so so that to fill the upper surface of filling material 36 of recess almost consistent with stopper film 35 upper surfaces with respect to the etch-rate of the stopper film 35 of the dry-etching of planarization operation (S202).In second embodiment, the material of stopper film 35 is Ta, and the material of filling material 36 is SiO
2, be lower than SiO with respect to the etch-rate of the Ta of the dry-etching of planarization operation (S202)
2Etch-rate, so satisfy this condition.
Like this, in planarization operation (S202), because of utilization has the dry-etching method of removing the tendency of protuberance than the recess selectivity rapidly, so can remove the filling material 36 of the side that covers first mask layer (tentative base material) 22 expeditiously.And, by utilizing the dry-etching method high, can remove first mask layer 22 on the record key element 32A rapidly to the etch-rate of first mask layer 22.Constitute first mask layer 22 of protuberance, because its width and temporary generation etch-rate is poor, but the first whole at short notice mask layers 22 is removed.Also have, because of the etch-rate of stopper film 35 in planarization operation (S202) is lower than first mask layer 22, so can suppress the processing of stopper film 35.So, can remove first mask layer 22 and unnecessary filling material 36 by an operation and make and have an even surface, therefore can realize the further raising of production efficiency.
Also have, in this second embodiment, the material of filling material 36 is SiO
2, the material of first mask layer (tentative base material) 22 is C, and planarization operation (S202) adopts etch-rate to first mask layer 22 to be higher than etch-rate to filling material 36, and uses and contain O
2Or O
3Processing with the reactive ion beam etching of gas, if but select etch-rate to first mask layer 22 to be higher than combination to the etch-rate of filling material 36, to the material of filling material 36, the material of first mask layer 22, the dry etching method of planarization operation (S202), be not particularly limited so.As the Ideal Match example, can enumerate the combination of table 3.
Table 3
| The kind of the ion beam milling of planarization operation | Filling material | First mask layer (tentative base material) | |
| Processing gas | The incident angle of ion beam | ||
| O 2、O 3、H 2、NH 3Gas | More than or equal to-10 ° smaller or equal to 90 ° (full angles) | SiO 2、Si、TaSi、 TiN、Ta、ITO、 MgO、Nb、ZrO 2、 WO 2、Al 2O 3 | C |
| Ar, Kr, Xe, Ne (inert gas) | More than or equal to-10 ° smaller or equal to 15 ° | TaSi、TiN、Ta、 Nb、ZrO 2、WO 2、 Al 2O 3、 | |
| Cu | SiO 2、Si、ITO、MgO | ||
| Cr | SiO 2、Si、ITO、MgO Al 2O 3、 | ||
| SF 6、CF 4、C 2F 6、 CL 2、BCl 3(halogen gas) | More than or equal to-10 ° smaller or equal to 90 ° (full angles) | Cr | SiO 2、Si、TaSi、TiN、 Ta、ITOMgO、ZrO 2、 WO 2、Al 2O 3 |
Also have, in the table 3, the example of a kind of processing with gas used in expression separately, but as above-mentioned second embodiment, to in the etch-rate of first mask layer 22 and the scope that the magnitude relationship of the etch-rate of filling material 36 is not reversed, also can utilize as oxygen class gas, H
2Gas, NH
3The reacting gas that gas and halogen gas are such and the mixed gas of inert gas.
Also have,, also can change the kind of processing with gas the carrying out in the process of planarization operation (S202) that the filling material of aforementioned first embodiment is removed the operation (S106) and second embodiment.For example, the planarization operation (S202) of the filling material of first embodiment being removed the operation (S106) or second embodiment is divided into two operations.In incipient operation, can use gas as processing by using with inert gases such as Ar gases, make the etch-rate of fixing tentatively base material is equal to or less than etch-rate to filling material; In next operation, use Ar gas and O
2, O
3Gas etc. and tentative base material carry out the mixed gas of the gas of chemical reaction, make the etch-rate to tentative base material be higher than the etch-rate of filling material also passable.And, remove in the planarization operation (S202) of the operation (S106) and second embodiment at the filling material of first embodiment, also can use the mixed gas that constitutes by multiple gases as processing gas, and at the ratio that carries out changing gradually in the process mixed gas of these operations.For example, in these operations, also can use inert gas and O
2Or O
3The mixed gas of gas is used gas as processing, and little by little increases O
2Or O
3The flow rate ratio of gas.
Also have, in aforementioned first and second embodiment, the material of stopper film 35 is Ta, but if the low material of etch-rate that filling material is removed in operation (S106) and the planarization operation (S108, S202) gets final product, can utilize the material of other nonmagnetic substance as stopper film 35.
And in aforementioned first embodiment, stopper film 35 double as filling materials are removed operation with stopper film and smooth chemical industry preface stopper film, remove operation with stopper film and smooth chemical industry preface stopper film but also can form filling material respectively.
Also have, in aforementioned first embodiment, in any one operation among filling material is removed operation (S106) and smooth chemical industry preface (S108), generation damages the problem of recording layer 32 because of etching, and when not taking place to damage the problem of recording layer 32 in another operation because of etching, also can be only to the etching of operation of the problem of recording layer 32 takes place to damage because of etching, use the material of the low material of etch-rate as stopper film 35.
Also have, in the time of can protecting record key element 32A to exempt from etched damage fully by first mask layer 22, and, also can omit stopper film 35 if write down influence that key element 32A is subjected to because of etching very little the time.At this moment, unnecessary filling material 36 be removed, so that the upper surface of the filling material 36 of filling recess is consistent with the upper surface of record key element 32A.For aforementioned second embodiment also is same.
Also have, in aforementioned first and second embodiment, when on recording layer 32, processing continuous recording layer 20, making first mask layer 22 remain in record key element 32A goes up and utilizes as tentative base material, but on recording layer 32, process after the continuous recording layer 20, as shown in figure 12, can on recording layer 32, film forming fix tentatively basalis 50.And tentative basalis 50 also is formed on the bottom surface and side of recess 34.At this moment, the material of first mask layer 22 can not be subjected to suitably to select from be fit to the recording layer material processed as the restriction of the function of tentative basalis.And, when on recording layer 32, processing continuous recording layer 20, first mask layer 22 is remained on the record key element 32A, can will fix tentatively basalis 50 again and form thereon.At this moment, the material of tentative basalis 50, so long as the planarization operation (S106, S202) etch-rate in the material that is higher than filling material 36 gets final product, its material also can be and first mask layer, 22 identical materials, can also be the material different with first mask layer 22.
Also have, in aforementioned first and second embodiment, first mask layer 22, second mask layer 24, resist layer 26 are formed on the continuous recording layer 20, and cut apart continuous recording layer 20 according to the dry-etching of 4 steps, and the tentative base material of first mask layer, 22 double as, but if continuous recording layer 20 can be cut apart with high precision, so the material of resist layer, mask layer, stacked number, thickness etc. are not particularly limited.For example, also can omit second mask layer.And, also can omit second mask layer 22 and first mask layer both and resist layer is formed directly on the continuous recording layer, and when resist layer cut apart continuous recording layer as mask layer, make the resist layer double as fix tentatively base material.
Also have, in aforementioned first and second embodiment, carry out film forming, but for example also can utilize other film build method such as the sputtering method that do not apply substrate bias power, CVD method, IBD method, filling material 36 is carried out film forming by bias sputtering method filling material 36.
Also have, in aforementioned first embodiment, and then carry out filling material afterwards in filling material film formation process (S104) and remove operation (S106), and in second embodiment, and then carry out planarization operation (S202) afterwards in filling material film formation process (S104), but also can make after filling material 36 film forming, with the cladding material of filling material 36 unlike materials further film forming on filling material 36, then carry out filling material and remove operation (S106) or planarization operation (S202).At this moment, filling material is removed in the operation (S106) (being planarization operation (S202) in second embodiment), preferably selects cladding material and engraving method, and feasible etch-rate to cladding material is lower than the etch-rate to filling material 36.And, at this moment, also can fill recess 34 with filling material 36 and cladding material.For example, in filling material film formation process (S104), in recess 34, carry out film forming with the thickness thinner a little with filling material 36, and by to carrying out film forming with cladding material on it than the degree of depth of recess 34, thus can both fill recess 34 with filling material 36 and cladding material.
Also have, in aforementioned first and second embodiment, the material of continuous recording layer 20 (record key element 32A) is the CoCr alloy, but for example also can use other alloys that contain iron family element (Co, Fe (iron), Ni), these other materials such as duplexer.
Also have, in aforementioned first and second embodiment, be formed with basalis 14, antiferromagnetic layer 15, soft ferromagnetic layer 16, oriented layer 18 under the continuous recording layer 20, but, can suitably change the structure of continuous recording layer 20 lower floors according to the kind of magnetic recording media.For example, can omit one or more layer among basalis 14, antiferromagnetic layer 15, soft ferromagnetic layer 16, the oriented layer 18.In addition, can also directly on substrate, form continuous recording layer.
Also have, in aforementioned first and second embodiment, magnetic recording media 30, its recording layer 32 grades only are formed on a side of substrate 12, but the present invention also can be applicable to the manufacturing of the both sides recording magnetic recording media that possesses recording layer in the both sides of substrate.
Also have, in aforementioned first and second embodiment, magnetic recording media 30, be at orbital drive to disk with the discrete track type of the perpendicular recording type of trickle interval cutting recording layer 32, but the present invention also can be applicable to certainly track circumference direction (fan-shaped direction) with the disk of trickle interval cutting recording layer, orbital drive to and the disk cut apart with trickle interval of the both direction of track circumference direction, have relief pattern continuous disk, the recording layer of palm (PERM) type of recording layer present the manufacturing of spiral-shaped disk.Also have, the present invention also can be applicable to the manufacturing with magnetic recording media of the recording layer of recordable type in the face.Also have, the present invention also can be applicable to photomagneto disk such as MO, and with the hot auxiliary type disk of magnetic heat, especially have a manufacturing of magnetic recording media of the recording layer of disc shape other relief patterns in addition such as tape.
The present invention for example can be used in the manufacturing of magnetic recording media that discrete track medium, patterned media etc. have the recording layer of relief pattern.
Claims (15)
1. the manufacture method of a magnetic recording media is characterized in that, comprising:
Processed system is made operation, makes the processed body with the tentative base material that forms on recording layer that forms with the relief pattern of stipulating on the substrate and the protuberance at least at this recording layer;
The filling material film formation process, the filling material that film forming is different with aforementioned tentative base material on aforementioned processed body and fill the recess of aforementioned relief pattern;
Filling material is removed operation, by the dry-etching method, at least a portion of the redundance that forms than the upper surface of the protuberance of aforementioned recording layer and in an opposite side with aforesaid base plate in the aforementioned filling material is removed, so that expose the side at least of the aforementioned tentative base material that forms on the protuberance of aforementioned recording layer;
The planarization operation is higher than etching method to the etch-rate of aforementioned filling material by the etch-rate to aforementioned tentative base material, removes aforementioned tentative base material and makes flattening surface.
2. according to the manufacture method of the described magnetic recording media of claim 1, it is characterized in that, etching method in the aforementioned planarization operation is a dry-etching method of utilizing the reacting gas with the characteristic of removing this tentative base material with aforementioned tentative base material generation chemical reaction.
3. according to the manufacture method of the described magnetic recording media of claim 1, it is characterized in that aforementioned filling material is removed in the operation, from the direction that tilts with respect to the normal of aforementioned processed surface, to this processed body irradiation processing gas.
4. according to the manufacture method of the described magnetic recording media of claim 1, it is characterized in that, remove in the operation, adopt etch-rate to aforementioned tentative base material to be equal to or less than dry-etching method the etch-rate of aforementioned filling material at aforementioned filling material.
5. according to the manufacture method of the described magnetic recording media of claim 1, it is characterized in that, remove in the operation, adopt etch-rate to aforementioned tentative base material to be higher than dry-etching method the etch-rate of aforementioned filling material at aforementioned filling material.
6. according to the manufacture method of the described magnetic recording media of claim 5, it is characterized in that, do in the operation in aforementioned processed system, the filling material that will be lower than the etch-rate of aforementioned tentative base material with respect to the etch-rate that aforementioned filling material is removed the dry-etching of operation is removed the operation stopper film, is formed between aforementioned tentative base material and the aforementioned recording layer.
7. according to the manufacture method of the described magnetic recording media of claim 4, it is characterized in that, remove in the operation at aforementioned filling material, adopt reacting gas with the characteristic that is removed with one of them selectivity generation chemical reaction of aforementioned filling material and aforementioned tentative base material.
8. according to the manufacture method of the described magnetic recording media of claim 4, it is characterized in that, remove in the operation, use ion beam milling at aforementioned filling material.
9. according to the manufacture method of the described magnetic recording media of claim 1, it is characterized in that, do in the operation in aforementioned processed system, to be lower than the planarization operation stopper film of the etch-rate of aforementioned tentative base material with respect to the etched etch-rate of aforementioned planarization operation, be formed between aforementioned tentative base material and the aforementioned recording layer.
10. according to the manufacture method of each described magnetic recording media in the claim 1～9, it is characterized in that, do in the operation in aforementioned processed system, with mask layer cover with the continuous recording layer that on aforesaid base plate, forms in the suitable part of protuberance of aforementioned relief pattern, and remove the part of exposing from aforementioned mask in the aforementioned continuous recording layer by etching method, form the recording layer of aforementioned relief pattern, and, the aforementioned mask layer that remains on the protuberance of this recording layer is used as at least a portion of aforementioned tentative base material.
11. the manufacture method of a magnetic recording media is characterized in that, comprising:
Processed system is made operation, makes the processed body with the tentative base material that forms on recording layer that forms with the relief pattern of stipulating on the substrate and the protuberance at least at this recording layer;
The filling material film formation process, the filling material that film forming is different with aforementioned tentative base material on aforementioned processed body and fill the recess of aforementioned relief pattern;
The planarization operation, be higher than etching method by etch-rate, the redundance that forms than the upper surface of the protuberance of aforementioned recording layer and in an opposite side with aforesaid base plate in the aforementioned filling material and aforementioned tentative base material are removed and made flattening surface the etch-rate of aforementioned filling material to aforementioned tentative base material.
12. the manufacture method according to the described magnetic recording media of claim 11 is characterized in that, in aforementioned planarization operation, adopts to have with aforementioned tentative base material generation chemical reaction and removes the reacting gas of the characteristic of this tentative base material.
13. manufacture method according to the described magnetic recording media of claim 11, it is characterized in that, do in the operation in aforementioned processed system, to be lower than the planarization operation stopper film of the etch-rate of aforementioned tentative base material with respect to the etch-rate of the dry-etching of aforementioned planarization operation, be formed between aforementioned tentative base material and the aforementioned recording layer.
14. the manufacture method according to the described magnetic recording media of claim 11 is characterized in that, in aforementioned planarization operation, from the direction that tilts with respect to the normal of aforementioned processed surface, to this processed body irradiation processing gas.
15. manufacture method according to each described magnetic recording media in the claim 11～14, it is characterized in that, do in the operation in aforementioned processed system, with mask layer cover with the continuous recording layer that on aforesaid base plate, forms in the suitable part of protuberance of aforementioned relief pattern, and remove the part of exposing from aforementioned mask in the aforementioned continuous recording layer by etching method, form the recording layer of aforementioned relief pattern, and, the aforementioned mask layer that remains on the protuberance of this recording layer is used as at least a portion of aforementioned tentative base material.
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| CN102473422A (en) * | 2009-07-10 | 2012-05-23 | 昭和电工株式会社 | Manufacturing method for magnetic recording medium, magnetic recording reproduction device |
| CN101952707B (en) * | 2008-02-21 | 2013-07-24 | 精工电子有限公司 | Tip type probe manufacturing method, tip type probe, and tip type probe manufacturing apparatus |
| CN109427580A (en) * | 2017-08-21 | 2019-03-05 | 三星电子株式会社 | The method for forming pattern |
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| JP2802213B2 (en) * | 1993-08-13 | 1998-09-24 | 株式会社日立製作所 | Method and apparatus for manufacturing magnetic recording medium |
| US6665145B2 (en) * | 1999-02-10 | 2003-12-16 | Tdk Corporation | Magnetic recording medium with unit minute recording portions |
| JP4042107B2 (en) * | 2003-02-14 | 2008-02-06 | 富士電機ホールディングス株式会社 | Manufacturing method of magnetic transfer master disk |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101952707B (en) * | 2008-02-21 | 2013-07-24 | 精工电子有限公司 | Tip type probe manufacturing method, tip type probe, and tip type probe manufacturing apparatus |
| CN102473422A (en) * | 2009-07-10 | 2012-05-23 | 昭和电工株式会社 | Manufacturing method for magnetic recording medium, magnetic recording reproduction device |
| CN102473422B (en) * | 2009-07-10 | 2014-10-29 | 昭和电工株式会社 | Manufacturing method for magnetic recording medium, magnetic recording reproduction device |
| CN109427580A (en) * | 2017-08-21 | 2019-03-05 | 三星电子株式会社 | The method for forming pattern |
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