CN1815369A - Method for avoiding crack generation of ZEP520 electronic resist - Google Patents
Method for avoiding crack generation of ZEP520 electronic resist Download PDFInfo
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- CN1815369A CN1815369A CN 200510006189 CN200510006189A CN1815369A CN 1815369 A CN1815369 A CN 1815369A CN 200510006189 CN200510006189 CN 200510006189 CN 200510006189 A CN200510006189 A CN 200510006189A CN 1815369 A CN1815369 A CN 1815369A
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- zep520
- resistant
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- electronic corrosion
- electronic
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 26
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000001459 lithography Methods 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 3
- 230000007797 corrosion Effects 0.000 claims description 28
- 238000005260 corrosion Methods 0.000 claims description 28
- 238000007669 thermal treatment Methods 0.000 claims description 10
- 238000004026 adhesive bonding Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 230000007850 degeneration Effects 0.000 claims description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 abstract description 14
- 238000010894 electron beam technology Methods 0.000 abstract description 5
- 239000003292 glue Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
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- 238000004090 dissolution Methods 0.000 description 3
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- 238000011161 development Methods 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010011376 Crepitations Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005815 base catalysis Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000004291 polyenes Chemical class 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
At present, a high-resolution ZEP520 positive electron resist can be used for manufacturing a nanometer fine pattern by using electron beam direct writing lithography, but cracks are easy to generate in the resist by adopting a conventional process, particularly on a gallium arsenide substrate, and a corresponding solution to the problem does not exist. The method for avoiding the crack of the ZEP520 electronic resist is to carry out heat treatment on a wafer substrate and then immediately coat a ZEP520 glue, so that the crack of the ZEP520 can be avoided, and meanwhile, the use of a toxic Hexamethyldisilazane (HMDS) tackifier can be avoided.
Description
Technical field
The present invention relates to microelectronics technology, specifically, (chemical constitution is the using skill of α-chloromethyl propylene acid esters (α-chloromethacrylate) and the multipolymer of α-Jia Jibenyixi (α-methyl styrene)), and this directly influences the processing effect of final nano-scale pattern structure to relate to a kind of positive electronic corrosion-resistant ZEP520 commonly used in the e-beam direct write lithography technology with nanoscale working ability.
Background technology
At microelectronics technology, adopt e-beam direct write lithography processing to have nano level high-resolution graphic structure, it is the important means of nanoprocessing, its principle is: the macromolecular material in the electronic corrosion-resistant is subjected to the bombardment generation chain rupture (positive corrosion-resisting agent) or the crosslinked reactions such as (negative resists) of high-power electron beam, solubility property in developer solution changes, the dissolution velocity of exposure area and unexposed area is created a difference, it is slower than the zone that has than small-molecular weight to have the regional dissolution velocity of larger molecular weight, rapidly-soluble regional resist is dissolved to be fallen, the slower regional resist of dissolution velocity is retained, thereby plays anti-etching effect in subsequent etching technology.In order to produce the nanometer level superfine figure with electron beam lithography, the electronic corrosion-resistant that usability is good is very necessary.ZEP520 is one of comparatively general electronic corrosion-resistant of current application, and it is the very good resist of amplification positive non-chemically of a kind of performance, resolution height not only, and also highly sensitive, anti-etching performance is good; Shortcoming is relatively poor with the adhesiveness of substrate (especially gallium arsenide (GaAs) material), itself also be easy to generate crackle (Fig. 1), crackle and exposure figure weave in can destroy figure, even do not overlap with exposure figure, after over etching or other figure transfer technology, crackle also can be transferred in the lump, and this all can produce serious harmful effect to exposure.
Generally adopt at present the way of before gluing, carrying out the adhesion enhancer processing earlier to solve the problem of poor adhesion, the effect of adhesion enhancer is to play the base catalysis reaction in wafer surface, the free hydroxyl of transfer wafer surface, the adhesiveness of raising resist and wafer surface.Normally at the tackifier of wafer surface gas deposition a part layer, such as HMDS (HMDS) etc., there are two problems in this method: the one, and HMDS itself is poisonous, easily cause human injury and environmental pollution, the 2nd, for the adhering effect of the enhancing that HMDS is played, need to adopt special-purpose fumigator.And, also do not have series of solutions at present for problem how to avoid ZEP520 to crack.
Summary of the invention
The objective of the invention is to propose the method that a kind of ZEP520 of avoiding electronic corrosion-resistant cracks the adverse effect of avoiding HMDS simultaneously.
For achieving the above object, technical solution of the present invention provides the method that a kind of ZEP520 of avoiding electronic corrosion-resistant cracks, and comprises step:
A) substrate is heat-treated;
B) ready coating ZEP520 electronic corrosion-resistant immediately then;
C) adopt normal condition to carry out preceding baking (as toasting 30 minutes down at 180 ℃ with baking oven) at last, natural cooling gets finished product, uses for e-beam direct write lithography processing.
Described method, its described heat treated condition, comprise that (thermal treatment makes substrate expanded by heating just before gluing for heat treatment temperature (80～120 ℃), heat treatment time (1～3 minute), thermal treatment instrument (hot plate) and annealing stress free method, thereby the notable difference of substrate and ZEP520 degrees of expansion when having weakened preceding the baking, thereby the stress among the ZEP520 is reduced greatly, the generation of crackle is avoided).
Described method, the time interval between its described thermal treatment and the gluing should lack as far as possible, preferably remains within 5 seconds, reduces the degeneration of wafer surface attitude.
Described method, it does not use tackifier between substrate and electronic corrosion-resistant.
Described method, its described substrate is gallium arsenide (GaAa), silicon (Si) or indium phosphide (InP).
Method of the present invention has the following advantages:
1. be the method for physics fully, and operation is very simple;
2. can avoid using poisonous HMDS tackifier, avoid it adverse effects such as the injury of human body and environmental pollutions;
3. do not need specialized equipment,, can reduce cost as fumigator etc.;
4. can avoid ZEP520 to form crackle, avoid its adverse effect, be significant for the reliability that improves electron beam exposure to electron beam exposure;
5. this method itself is very stable, reliable, helps improving the yield rate of beamwriter lithography.When not adopting this method, go up the yield rate of carrying out electron beam exposure at gallium arsenide (GaAs), silicon (Si) and be about 20%, 80% respectively, and after adopting this method, yield rate all can be brought up to more than 90% with ZEP520.
Description of drawings
Fig. 1 is scanning electron microscope (SEM) the surface topography photo of the crackle that extensively distributes in the ZEP520 electronic corrosion-resistant on gallium arsenide (GaAs) substrate;
Fig. 2 is scanning electron microscope (SEM) the surface topography photo that does not have crackle in the ZEP520 electronic corrosion-resistant on gallium arsenide (GaAs) substrate.
Embodiment
Concrete grammar of the present invention is stifling HMDS before being coated with the ZEP520 electronic corrosion-resistant, but adopts the method for physics that the surface of substrate is heat-treated, and applies the ZEP520 electronic corrosion-resistant then immediately and can avoid the phenomenon (Fig. 2) that cracks.
Substrate mainly is at gallium arsenide (GaAs) substrate, when using silicon (Si), indium phosphide substrates such as (InP), for preventing to crack, preferably also wants thermal treatment before being coated with the ZEP520 electronic corrosion-resistant.
The time interval between thermal treatment and the gluing should lack as far as possible, preferably remains within 5 seconds.
By description, further describe concrete grammar of the present invention and principle thereof below in conjunction with accompanying drawing to specific embodiment, wherein:
Fig. 1 is scanning electron microscope (SEM) the surface topography photo of the very big crackle of the size that extensively distributes in the ZEP520 glue on gallium arsenide (GaAs) substrate, its process conditions are normal condition, be gallium arsenide (GaAs) substrate before gluing without bakingout process, four big squares and vertical slender threads are the groove pattern of ZEP520 among the figure;
Fig. 2 is scanning electron microscope (SEM) the surface topography photo when not having crackle in the ZEP520 electronic corrosion-resistant on gallium arsenide (GaAs) substrate, its corresponding condition is earlier gallium arsenide (GaAs) substrate to be heat-treated before gluing, apply ZEP520 electronic corrosion-resistant (can not be coated with HMDS (HMDS)) then immediately, identical among the groove pattern among Fig. 2 on the ZEP520 glue and Fig. 1.
By experiment as can be known, the use of the generation of crackle and HMDS (HMDS) whether, conditions such as the temperature of preceding baking, time, instrument (hot plate or baking oven), mode (temperature is taken out after being raised to and putting into substrate after the setting value and dried by the fire immediately, put under the room temperature to be warming up to after the substrate be cooled to room temperature earlier after setting value dry by the fire and take out substrate again), exposure dose, development time all have nothing to do.If but gluing (can not be coated with HMDS (HMDS)) immediately after gallium arsenide (GaAs) substrate heat-treated just can prevent the generation of resist figure crack performance behind the exposure imaging.
Gallium arsenide (GaAs) is during without thermal treatment, the ZEP520 electronic corrosion-resistant in preceding baking back, after exposure, all do not have glue to split phenomenon, but crackles a large amount of after development promptly display, and the distribution of crackle is very regular among Fig. 1, and the distribution of crackle and the distribution of figure are closely related, gallium arsenide (GaAs) was much more obvious than ZEP520 electronic corrosion-resistant expanded by heating when this explanation crack reason was preceding baking, thereby in the ZEP520 electronic corrosion-resistant, accumulated certain stress, these stress are released after exposure imaging produces figure, thereby form crackle.Be coated with the ZEP520 electronic corrosion-resistant after the thermal treatment immediately and can avoid cracking (Fig. 2), this is because thermal treatment makes gallium arsenide (GaAs) expanded by heating just before gluing, thereby the notable difference of gallium arsenide (GaAs) and ZEP520 electronic corrosion-resistant degrees of expansion when having weakened preceding the baking, thereby the stress in the ZEP520 electronic corrosion-resistant is reduced greatly, crackle is avoided.It is because the thermal expansivity of silicon (Si) is more much lower than gallium arsenide (GaAs) that the ZEP520 electronic corrosion-resistant is not easy to crack on silicon (Si), and more approaching with the thermal expansivity of organic polymer (containing polyester, polyene etc.), the thermal linear expansion coefficient of silicon (Si), gallium arsenide (GaAs) is respectively 2.59 * 10
-6K
-1With 5.75 * 10
-6/ K, and organic polymer generally is about 1 * 10
-6/ K magnitude.
Claims (5)
1. a method of avoiding the ZEP520 electronic corrosion-resistant to crack is characterized in that, comprises step:
A) substrate is heat-treated;
B) ready coating ZEP520 electronic corrosion-resistant immediately then;
C) adopt normal condition to carry out preceding baking at last, natural cooling gets finished product, uses for e-beam direct write lithography processing.
2. the method for claim 1 is characterized in that, the described a) step, it adopted hot plate with substrate thermal treatment, and heat treatment temperature is 80～120 ℃, and heat treatment time is 1～3 minute.
3. the method for claim 1 is characterized in that, described b) go on foot ready coating electronic corrosion-resistant immediately, be meant within 5 seconds to apply electronic corrosion-resistant that the time interval between thermal treatment and the gluing is short as far as possible, to reduce the degeneration of wafer surface attitude.
4. the method for claim 1 is characterized in that, does not use tackifier between substrate and electronic corrosion-resistant.
5. as claim 1,2 or 4 described methods, it is characterized in that described substrate is gallium arsenide, silicon or indium phosphide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510006189 CN1815369A (en) | 2005-01-31 | 2005-01-31 | Method for avoiding crack generation of ZEP520 electronic resist |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510006189 CN1815369A (en) | 2005-01-31 | 2005-01-31 | Method for avoiding crack generation of ZEP520 electronic resist |
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| Publication Number | Publication Date |
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| CN1815369A true CN1815369A (en) | 2006-08-09 |
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| CN 200510006189 Pending CN1815369A (en) | 2005-01-31 | 2005-01-31 | Method for avoiding crack generation of ZEP520 electronic resist |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101382733B (en) * | 2008-09-27 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing nanoscale pattern |
| CN101430503B (en) * | 2007-11-07 | 2011-06-29 | 中国科学院微电子研究所 | Method for removing double-layer glue for electron beam lithography stripping |
| CN101625522B (en) * | 2008-07-09 | 2012-03-21 | 中国科学院微电子研究所 | Method for making dense pattern on thick negative high-resolution electron beam resist HSQ |
| CN102608865A (en) * | 2012-02-20 | 2012-07-25 | 胡国兵 | High-temperature-resisting transparent thick-film photoresist and application thereof in preparing LED phosphor layer |
| CN102608863A (en) * | 2011-01-25 | 2012-07-25 | 中国科学院微电子研究所 | Method for preparing diffraction optical element with large height-width ratio |
-
2005
- 2005-01-31 CN CN 200510006189 patent/CN1815369A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101430503B (en) * | 2007-11-07 | 2011-06-29 | 中国科学院微电子研究所 | Method for removing double-layer glue for electron beam lithography stripping |
| CN101625522B (en) * | 2008-07-09 | 2012-03-21 | 中国科学院微电子研究所 | Method for making dense pattern on thick negative high-resolution electron beam resist HSQ |
| CN101382733B (en) * | 2008-09-27 | 2011-04-20 | 中国科学院微电子研究所 | Method for manufacturing nanoscale pattern |
| CN102608863A (en) * | 2011-01-25 | 2012-07-25 | 中国科学院微电子研究所 | Method for preparing diffraction optical element with large height-width ratio |
| CN102608865A (en) * | 2012-02-20 | 2012-07-25 | 胡国兵 | High-temperature-resisting transparent thick-film photoresist and application thereof in preparing LED phosphor layer |
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