CN1811598A - Method for controlling flexibly electron beam photoetching developing time through layout - Google Patents
Method for controlling flexibly electron beam photoetching developing time through layout Download PDFInfo
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Abstract
The present invention belongs to the field of microfine processing technology, in particular, it relates to a method for flexibly controlling electronic-beam photoetching development time by means of domain design. The exposure data file is formed from formal exposure domain and test domain; in the exposure process a group of variable dosages is designed for test domain, so that the development time can be flexibly controlled according to the development condition of test domain. In the formal exposure domain, a group of patterns with different dosages is added and designed, so that the correct development time can be defined by means of observing development condition of these patterns. The domain of the described test pattern is designed according to the formal exposure domain, so that it has high flexibility. Said invention can be extensively used in domain design in the electronic beam exposure.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field, the flexible controlling electron beam photoetching development of particularly a kind of layout design time method.
Background technology
In the micro processing field of scientific research, electron-beam lithography system can be used for making mask plate, also can be used to directly write the generation figure.The more important thing is that the e-beam direct write lithography technology can obtain littler pattern character size, this research for the novel micro nanometer device has very important meaning.And an important indicator of e-beam direct write lithography technology is exactly, and whether has good consistance through the figure on the electron beam exposure and the back electron sensitive resist that develops and the domain figure of design.This index is by a lot of aspects factor decision, the graphic designs in the domain for example, and the resolution sizes of electron sensitive resist, the size of electron beam line and dosage, and the temperature and time of preceding baking and back baking etc.
In general, for a kind of specific resist, SAL601 negativity electron sensitive resist for example, temperature, the time of baking and back baking are fixed before it, and what need to determine is electron beam line and dosage size, and last development time.In the general Study process, usually determine the electron beam line earlier according to pattern character size, design one group then and become dosage, fixing development time, in developing result, observe figure at last, figure and the design configuration consistance of determining which group dosage are best, so later on then fixing this group dosage that uses in the exposure data file.Yet a problem that often occurs in the technological process of reality is that when having size dimension figure mixed exposure, test findings often can not repeat.That is to say, after having determined the dosage size, but in the development time of regulation, do not reach best development effect.This is because the existence of electron beam proximity effect makes different graphic designs have different developing result.On the other hand, because the variation of external condition, baking before whole, exposure, in the back baking and the process of developing, all can some difference between the test each time, this also can have influence on developing process to a certain extent, if fixing development time, the figure in so each test on the last electron sensitive resist all can be inconsistent, small size figure especially wherein.
Summary of the invention
The objective of the invention is to propose the flexible controlling electron beam photoetching development of a kind of layout design time method.Can make the figure of size dimension in the domain can both obtain desirable development effect according to the time of actual conditions controlling electron beam exposure flexibly back development.Mainly be that this directly has influence on the consistance of develop back figure and design configuration to the control of development time in e-beam direct write lithography (EBL) technology very crucial in the microfabrication.
For achieving the above object, in layout design, can add one group of figure that is used to control development time.In the exposure data file, design one group of dosage that changes to resolution chart.In developing process, when resolution chart is organized dosage development disappearance, must there be the developing result and the pre-best consistance of figure acquisition that designs of the formal figure of some dosage.And the design of this resolution chart is to be determined by the domain that actual needs exposes.
A kind of controlling electron beam photoetching development time method is characterized in that, the exposure data file is made up of formal exposure domain and test domain; To test domain and be designed to one group of change dosage in exposure process, development time is controlled flexibly according to the development situation of testing domain.
Described controlling electron beam photoetching development time method, the unit of test domain wherein needs to comprise the figure of live width minimum in the formal domain, and is arranged in cell array so that Direct observation development situation according to formal exposure layout design.
The dosage of test domain is the mean value of minimum dose and maximum dose in the design layout according to formal domain dosage, will test domain dosage be designed to the dosage of one group of variation.
One group of dosage that changes is 10,12,14,16,18,20,22,24,26,28, and its unit is μ C/cm
2Xiang Guan resolution chart dosage also is designed to identical change dosage simultaneously.
When dosage is 14 μ C/cm
2Resolution chart when disappearing, dosage is 18 μ C/cm
2Formal exposure figure development effect best.
Adopt SAL601 negativity electron sensitive resist, comprise the size dimension mixed graph of 0.2 ~ 20 μ m in the layout design.Because whether can't actual observation develop fully to little figure in the developing process, the control of development time becomes extremely important.If development time is long, little figure will remove, otherwise development time is too short, and it is not enough and do not reach requirement that figure develops again.Particularly, proximity effect makes the more difficult control of development time of different designs figure in the electron-beam direct writing.
Description of drawings
In conjunction with the accompanying drawings, can give an example this problem clearly is described.
Fig. 1 is the synoptic diagram that concerns between formal graphic element and the resolution chart unit.
Fig. 2 is layout design and the corresponding dosage design drawing that comprises resolution chart.
Fig. 3 is the process flow diagram of controlling electron beam photoetching development time method of the present invention.
Embodiment
As shown in Figure 1, comprise the large scale square of 20 μ m in the design configuration, and the long lines of the small size of 5 μ m square and 0.2 μ m.Develop to require is that lines with 0.2 μ m can well develop out.Because line size is very little, can not judge directly in the developing process whether lines reach requirement.At this moment can design one group of resolution chart that is used to control development time, the elementary cell in this resolution chart is the square of 5 μ m and the lines of 0.2 μ m.
For the ease of observing, can be with the array of one 20 * 20 of resolution chart unit design.The used dosage of electron beam when determining formal exposure, one group of dosage that changes of design earlier is as 10,12,14,16,18,20,22,24,26,28, μ C/cm
2Xiang Guan resolution chart dosage also is 10,12,14,16,18,20,22,24,26,28 simultaneously, μ C/cm
2, as shown in Figure 2.Because resolution chart can Direct observation, then can determine development time according to the development situation of resolution chart in developing process, find that working as dosage is 14 μ C/cm
2Resolution chart when showing to fall fully, dosage is 18 μ C/cm
2The developing result of formal domain in the developing result of big figure and little figure all fine.Thus, in formal exposure technology, exposure figure is designed to dosage 18 μ C/cm
2, the dosage of resolution chart still is designed to become dosage.Dosage is 14 μ C/cm during development
2The die-out time of lines be exactly needed development time.
The controlling electron beam photoetching development time method of Fig. 3, its concrete steps are as follows: step 1, with one group of resolution chart of software (as Ledit) design of drawing domain, as seen resolution chart requires macroscopic view, and conditions of exposure is the same with the conditions of exposure of core graphic in the formal figure;
Step 2 is handled resolution chart and formal exposure figure on workstation, and is write out the exposure file, and the dosage with resolution chart and formal figure all is designed to one group of change dosage hereof;
Step 3 is put into the cavity of direct electronic beam one-writing system after slice, thin piece handled well, the exposure file according to design carries out electron beam exposure then;
Step 4 is taken out slice, thin piece, and the back baking is developed, and in developing process, examines resolution chart, if the experience development time is m minute, so about m minute in dosage be that the resolution chart of A develops and just shows clean, develop and finish, subsequent technique develops;
Step 5 is observed slice, thin piece with microscope or SEM, finds out the best dosage of development effect in the formal figure, supposes it is dosage B;
Step 6, when doing formal slice, thin piece, the dosage dosage B of formal figure in the exposure file, and the dosage of resolution chart still is foregoing change dosage;
Step 7, in the developing process when dosage be the resolution chart of A when develop showing clean, take out slice, thin piece, the development effect that designs dosage this moment and be the formal figure of B is best.
Claims (6)
1. a controlling electron beam photoetching development time method is characterized in that, the exposure data file is made up of formal exposure domain and test domain; To test domain and be designed to one group of change dosage in exposure process, development time is controlled flexibly according to the development situation of testing domain.
2. according to the described controlling electron beam photoetching development of claim 1 time method, it is characterized in that, the unit of test domain wherein needs to comprise the figure of live width minimum in the formal domain, and is arranged in cell array so that Direct observation development situation according to formal exposure layout design.
3. according to the described controlling electron beam photoetching development of claim 1 time method, it is characterized in that, the dosage of test domain is the mean value of minimum dose and maximum dose in the design layout according to formal domain dosage, will test domain dosage be designed to the dosage of one group of variation.
4. according to the described controlling electron beam photoetching development of claim 3 time method, it is characterized in that one group of dosage that changes is 10,12,14,16,18,20,22,24,26,28, its unit is μ C/cm
2Xiang Guan resolution chart dosage also is designed to identical change dosage simultaneously.
5. according to claim 1 or 3 or 4 described controlling electron beam photoetching development time method, it is characterized in that, when dosage is 14 μ C/cm
2Resolution chart when disappearing, dosage is 18 μ C/cm
2Formal exposure figure development effect best.
6. according to the described controlling electron beam photoetching development of claim 1 time method, its concrete steps are as follows:
Step 1, with one group of resolution chart of software design of picture domain, as seen resolution chart requires macroscopic view, and conditions of exposure is the same with the conditions of exposure of core graphic in the formal figure;
Step 2 is handled resolution chart and formal exposure figure on workstation, and is write out the exposure file, and the dosage with resolution chart and formal figure all is designed to one group of change dosage hereof;
Step 3 is put into the cavity of direct electronic beam one-writing system after slice, thin piece handled well, the exposure file according to design carries out electron beam exposure then;
Step 4 is taken out slice, thin piece, and the back baking is developed, and in developing process, examines resolution chart, if the experience development time is m minute, so about m minute in dosage be that the resolution chart of A develops and just shows clean, develop and finish, subsequent technique develops;
Step 5 is observed slice, thin piece with microscope or SEM, finds out the best dosage of development effect in the formal figure, supposes it is dosage B;
Step 6, when doing formal slice, thin piece, the dosage dosage B of formal figure in the exposure file, and the dosage of resolution chart still is foregoing change dosage;
Step 7, in the developing process when dosage be the resolution chart of A when develop showing clean, take out slice, thin piece, the development effect that designs dosage this moment and be the formal figure of B is best.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200510005742 CN1811598A (en) | 2005-01-25 | 2005-01-25 | Method for controlling flexibly electron beam photoetching developing time through layout |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923289A (en) * | 2009-05-21 | 2010-12-22 | 台湾积体电路制造股份有限公司 | The monitoring electron beam covers and provides the method and system of Advanced process control |
| CN107728437A (en) * | 2017-11-17 | 2018-02-23 | 深圳市龙图光电有限公司 | The development pattern precision control method and its developing apparatus of mask plate |
-
2005
- 2005-01-25 CN CN 200510005742 patent/CN1811598A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923289A (en) * | 2009-05-21 | 2010-12-22 | 台湾积体电路制造股份有限公司 | The monitoring electron beam covers and provides the method and system of Advanced process control |
| CN101923289B (en) * | 2009-05-21 | 2012-05-23 | 台湾积体电路制造股份有限公司 | Method and system of monitoring e-beam overlay and providing advanced process control |
| CN107728437A (en) * | 2017-11-17 | 2018-02-23 | 深圳市龙图光电有限公司 | The development pattern precision control method and its developing apparatus of mask plate |
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