CN1805275A

CN1805275A - Method of manufacturing surface acoustic wave device and surface acoustic wave device

Info

Publication number: CN1805275A
Application number: CN 200510132693
Authority: CN
Inventors: 矢岛有继; 佐藤久克; 小岛贵志
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2004-12-20
Filing date: 2005-12-20
Publication date: 2006-07-19
Anticipated expiration: 2025-12-20
Also published as: CN100505532C

Abstract

A method of manufacturing a surface acoustic wave device formed in one chip and including over a semiconductor substrate at least an IC region and a surface acoustic wave element region that are horizontally disposed, the method including: forming in the IC region over the semiconductor substrate a semiconductor element layer that includes a semiconductor element and an insulation layer covering the semiconductor element and being deposited also in the surface acoustic wave element region; forming over the semiconductor element layer a wire layer that includes a plurality of wires coupled to the semiconductor element and a wire insulating film deposited over the plurality of wires to provide insulation among the wires, the wire insulating film being deposited also over the insulation layer in the surface acoustic wave element region; forming an interlayer insulating film having a flattened surface on the wire insulating film in the IC region and the surface acoustic wave element region; forming a piezoelectric thin film on the interlayer insulating film; and forming a surface acoustic wave element on the piezoelectric thin film in the surface acoustic wave element region.

Description

The manufacture method of surface acoustic wave device and surface acoustic wave device

Technical field

The present invention relates on semiconductor substrate IC zone and surface acoustic wave element zone are constituted the manufacture method and the surface acoustic wave device of the surface acoustic wave device of a chip.

Background technology

Since with SAW (surface acoustic wave) resonator or SAW filter be the surface acoustic wave element of representative have high frequency, small-sized, excellent characteristic such as can produce in batches, so be widely used in the communications field.In recent years, because portable communication device etc. is universal, strong request is in miniaturization, the lightweight of the parts of high-frequency domain use.

In the face of this requirement, for example shown in non-patent literature 1, the scheme of following surface acoustic wave device has been proposed: be not that surface acoustic wave element is used as the filter monomer, but on the semiconductor substrate that is formed with high-frequency amplifier circuit etc. on its part, form piezoelectric membrane, and form the SAW filter.

[non-patent literature 1] J.H.Viseer, IEEE, Ultrasonics Symposium, p.195-200 (1989)

Such on semiconductor substrate with IC zone and surface acoustic wave element zone in the transversely arranged surface acoustic wave device that constitutes a chip, in the IC zone, semiconductor element is stacked by dielectric film with the wiring that it is connected.On the other hand since on the surface acoustic wave element zone only stacked dielectric film, so between IC zone and surface acoustic wave element zone, produce step difference.Surface acoustic wave device although it is so normally forms a plurality of surface acoustic wave devices in semiconductor wafer makes them adjacent respectively, but by carrying out stacked to layers such as insulating barriers, this step difference is accompanied by and is tilted in the surface acoustic wave element regional development, and existence can not be guaranteed the problem of the flatness of surface acoustic wave element region surface.When the flatness on surface worsened, the making of surface acoustic wave element just can not be guaranteed dimensional accuracy, made the deterioration in characteristics of surface acoustic wave element.In addition, the concavo-convex deviation that will cause the thickness when forming piezoelectric membrane on the surface that causes because of the deterioration of flatness, deviation also will take place in the resonance frequency that can envision surface acoustic wave element.In addition, in such surface acoustic wave device, though before forming surface acoustic wave element, need to make the substrate planarization, do not use CMP (Chemical Mechanical Polishing: chemico-mechanical polishing) handle the knowledge that waits the flattening surface that makes the surface acoustic wave element zone.

Summary of the invention

The present invention proposes in order to solve above-mentioned problem, its purpose is to provide the manufacture method and the surface acoustic wave device of surface acoustic wave device, in the IC zone that on semiconductor substrate, constitutes a chip and the surface acoustic wave device in surface acoustic wave element zone, can guarantee to form the flatness of the part of surface acoustic wave element, and obtain good characteristic.

In order to solve above-mentioned problem, the manufacture method of surface acoustic wave device of the present invention is to possess the IC zone constitutes the surface acoustic wave device of a chip with the surface acoustic wave element zone, with their configurations arranged side by side manufacture method on semiconductor substrate at least, it is characterized in that, possess following operation: the above-mentioned IC zone on above-mentioned semiconductor substrate forms the operation of semiconductor element layer, and this semiconductor element layer possesses semiconductor element and the element insulating film that covers above-mentioned semiconductor element; Form the operation of wiring layer on above-mentioned semiconductor element layer, this wiring layer will be by carrying out with a plurality of wirings that are connected of above-mentioned semiconductor element and making that the wiring dielectric film that insulate between above-mentioned wiring carries out stackedly constituting; In above-mentioned each operation, the said elements dielectric film that will constitute above-mentioned semiconductor element layer in above-mentioned surface acoustic wave element zone carries out stacked with the above-mentioned wiring dielectric film that constitutes above-mentioned wiring layer, on the wiring dielectric film in above-mentioned IC zone and above-mentioned surface acoustic wave element zone, form the surface operation of the interlayer dielectric of planarization; On above-mentioned interlayer dielectric, form the operation of piezoelectric membrane; And the operation that forms surface acoustic wave element on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone.

According to the manufacture method of this surface acoustic wave device, carry out planarization by surface to interlayer dielectric, can make the piezoelectric membrane that on interlayer dielectric, forms keep smooth state and form.Thus, can be formed on the surface acoustic wave element that comprises IDT (interdigital transducer) electrode that forms on the piezoelectric membrane, the deviation, the characteristic surface of good acoustic wave device that do not have resonance frequency can be provided with good dimensional accuracy.In addition, by making the flattening surface of interlayer dielectric, also can obtain to improve crystalline orientation, the increase electromechanical coupling factor k of piezoelectric membrane ²Effect.

In addition, for the manufacture method of surface acoustic wave device of the present invention, the preferably above-mentioned formation surface operation of the interlayer dielectric of planarization is after forming interlayer dielectric the operation that CMP handles to be carried out on its surface.

According to the manufacture method of this surface acoustic wave device, handle the flattening surface make interlayer dielectric by CMP, can make the piezoelectric membrane that on interlayer dielectric, forms keep smooth state and form.Thus, can be formed on the surface acoustic wave element that comprises the IDT electrode that forms on the piezoelectric membrane, the deviation, the characteristic surface of good acoustic wave device that do not have resonance frequency can be provided with good dimensional accuracy.

In addition, for the manufacture method of surface acoustic wave device of the present invention, the above-mentioned formation surface operation of the interlayer dielectric of planarization also can be the operation that forms sog film.

According to the manufacture method of this surface acoustic wave device, (Spin On Glass: spin-on-glass) film can easily obtain the interlayer dielectric of flattening surface as interlayer dielectric by using SOG.This sog film can obtain by high-temperature baking behind rotation applying liquid SOG material.

In addition, the manufacture method of surface acoustic wave device of the present invention, preferably have on the above-mentioned semiconductor substrate in above-mentioned surface acoustic wave element zone or said elements dielectric film or above-mentioned wiring dielectric film on, the bed thickness that forms one deck is at least adjusted the operation of film.

Manufacture method according to this surface acoustic wave device, by bed thickness adjustment film suitably is set on the above-mentioned semiconductor substrate in the surface acoustic wave element zone or on element insulating film or the wiring dielectric film, the IC zone and the step difference in surface acoustic wave element zone are reduced, can carry out easily that CMP handles or the planarization of the interlayer dielectric of sog film in forming.

In addition, the manufacture method of surface acoustic wave device of the present invention, preferably make above-mentioned bed thickness adjust the below that film is provided in above-mentioned surface acoustic wave element, and, the region projection that forms above-mentioned surface acoustic wave element is formed by the position and the area that are included in the formed zone of above-mentioned bed thickness adjustment film to the zone on the thickness direction of above-mentioned surface acoustic wave device.

Manufacture method according to this surface acoustic wave device, by below surface acoustic wave element and by position that comprises surface acoustic wave element and area, forming bed thickness adjustment film, the step difference of the part that forms surface acoustic wave element is reduced, can form the good face of flatness.

In addition, in the manufacture method of surface acoustic wave device of the present invention, the operation that is preferably formed above-mentioned bed thickness adjustment film is same operation with the operation that forms above-mentioned wiring, and above-mentioned bed thickness is adjusted film and formed with the above-mentioned wiring with one deck.

According to the manufacture method of this surface acoustic wave device, can be that the operation of same operation forms bed thickness adjustment film by operation with the wiring that forms the IC zone, can form bed thickness efficiently and adjust film.

In addition, the manufacture method of surface acoustic wave device of the present invention is characterised in that, comprise: after forming said elements dielectric film and above-mentioned wiring dielectric film, the operation that CMP handles is carried out on the surface of said elements dielectric film and above-mentioned wiring dielectric film, perhaps form operation as the above-mentioned sog film of said elements dielectric film and above-mentioned wiring dielectric film.

Manufacture method according to this surface acoustic wave device, particularly form under the situation of multiple wiring layer at needs, suitably element insulating film and the above-mentioned wiring dielectric film of IC zone with the surface acoustic wave element zone carried out the CMP processing or form sog film, can reduce IC zone and surface acoustic wave element step differences between regions.Like this, can easily make the interlayer dielectric planarization.

In addition, the manufacture method of surface acoustic wave device of the present invention is preferably carried out above-mentioned CMP and is handled or form above-mentioned sog film possessing under the wafer state of a plurality of above-mentioned surface acoustic wave devices.

According to the manufacture method of this surface acoustic wave device,, can implement the planarization of element insulating film, wiring dielectric film, interlayer dielectric efficiently by carrying out under the wafer state of a plurality of surface acoustic wave devices that CMP handles or form sog film possessing.

In addition, surface acoustic wave device of the present invention, on semiconductor substrate, dispose IC zone and surface acoustic wave element zone at least side by side, and constitute a chip, it is characterized in that, possess on the IC zone on the above-mentioned semiconductor substrate: semiconductor element layer, this semiconductor element layer are formed with semiconductor element and the above-mentioned semiconductor element of covering and arrive the element insulating film in above-mentioned surface acoustic wave element zone; Wiring layer, this wiring layer is by forming with the wiring that is connected of above-mentioned semiconductor element and the wiring dielectric film that makes insulation between above-mentioned wiring and arrive above-mentioned surface acoustic wave element zone stacked carrying out on the above-mentioned semiconductor element layer; Interlayer dielectric, this interlayer dielectric forms on the wiring dielectric film in above-mentioned IC zone and above-mentioned surface acoustic wave element zone, and the surface is planarization; The piezoelectric membrane that on above-mentioned interlayer dielectric, forms; And the surface acoustic wave element that forms on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone.

According to this structure, can make the flattening surface of interlayer dielectric, make the piezoelectric membrane that on interlayer dielectric, forms keep smooth state and form.Thus, can be formed on the surface acoustic wave element that comprises the IDT electrode that forms on the piezoelectric membrane, the deviation, the characteristic surface of good acoustic wave device that do not have resonance frequency can be provided with good dimensional accuracy.In addition, by the planarization on interlayer dielectric surface, also can obtain to improve crystalline orientation, the increase electromechanical coupling factor k of piezoelectric membrane ²Effect.

In addition, surface acoustic wave device of the present invention preferably on the above-mentioned semiconductor substrate in above-mentioned surface acoustic wave element zone or on said elements dielectric film or the above-mentioned wiring dielectric film, forms thick at least from level to level adjustment film.

According to this structure, by on the semiconductor substrate in the surface acoustic wave element zone or on element insulating film or the wiring dielectric film, bed thickness suitably is set adjusts film, the step difference in IC zone and surface acoustic wave element zone can be reduced, the planarization of planarization can be easily utilized interlayer dielectric.Thus, can form surface acoustic wave element with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device.

In addition, surface acoustic wave device of the present invention, preferably above-mentioned bed thickness is adjusted the below that film is provided in above-mentioned surface acoustic wave element, and the formed region projection of above-mentioned surface acoustic wave element is formed by the position and the area that are included in the zone that forms above-mentioned bed thickness adjustment film to the zone on the thickness direction of above-mentioned surface acoustic wave device.

According to this structure, by below surface acoustic wave element and by position that comprises the zone that forms surface acoustic wave element and area, forming bed thickness adjustment film, can reduce to form the step difference of surface acoustic wave element part, can form the good face of flatness.Thus, can form surface acoustic wave element with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device.

And then, the manufacture method of surface acoustic wave device of the present invention is to possess IC zone and surface acoustic wave element zone on semiconductor substrate at least, the above-mentioned surface acoustic wave element of configuration zone on above-mentioned IC zone, constitute the manufacture method of the surface acoustic wave device of a chip, it is characterized in that, possess: the above-mentioned IC zone on above-mentioned semiconductor substrate forms the operation possess semiconductor element and the semiconductor element layer of the element insulating film that covers above-mentioned semiconductor element; Form the operation of wiring layer on above-mentioned semiconductor element layer, this wiring layer will carry out with a plurality of wirings that are connected of above-mentioned semiconductor element and make the wiring dielectric film that insulate between above-mentioned wiring carry out stacked and constitute; On above-mentioned wiring layer, form the surface operation of the interlayer dielectric of planarization; On above-mentioned interlayer dielectric, form the operation of piezoelectric membrane; And on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone, form the operation of surface acoustic wave element.

According to the manufacture method of this surface acoustic wave device, carry out planarization by surface to interlayer dielectric, can make the piezoelectric membrane that on interlayer dielectric, forms keep smooth state and form.Thus, can be formed on the surface acoustic wave element that comprises the IDT electrode that forms on the piezoelectric membrane with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device.In addition, carry out planarization, also obtained to improve crystalline orientation, the increase electromechanical coupling factor k of piezoelectric membrane by surface to interlayer dielectric ²Effect.

In addition, for the manufacture method of surface acoustic wave device of the present invention, the preferred above-mentioned formation surface operation of the interlayer dielectric of planarization is after forming interlayer dielectric the operation that CMP handles to be carried out on its surface.

According to the manufacture method of this surface acoustic wave device, handle with the piezoelectric membrane that carries out planarization, can make on interlayer dielectric, forming and keep smooth state and form by the surface of interlayer dielectric being carried out CMP.Thus, can be formed on the surface acoustic wave element that comprises the IDT electrode that forms on the piezoelectric membrane with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device.

In addition, in the manufacture method of surface acoustic wave device of the present invention, the above-mentioned formation surface operation of the interlayer dielectric of planarization also can be the operation that forms sog film.

According to the manufacture method of this surface acoustic wave device, (Spin On Glass: spin-on-glass) film can easily obtain the surface interlayer dielectric of planarization as interlayer dielectric by using SOG.This sog film is to use spin coating method that liquid SOG material is rotated and applies after high-temperature baking obtains.

In addition, surface acoustic wave device of the present invention is to possess IC zone and surface acoustic wave element zone on semiconductor substrate at least, the above-mentioned surface acoustic wave element of configuration zone on above-mentioned IC zone, constitute the surface acoustic wave device of a chip, it is characterized in that, this surface acoustic wave device possesses: semiconductor element layer, this semiconductor element layer IC zone on above-mentioned semiconductor substrate is formed with semiconductor element and covers the element insulating film of above-mentioned semiconductor element; Wiring layer, this wiring layer on the above-mentioned semiconductor element layer to carrying out with the wiring that is connected of above-mentioned semiconductor element and making the wiring dielectric film that insulate between above-mentioned wiring carry out stacked and form; The surface that forms on the wiring dielectric film in above-mentioned IC zone is the interlayer dielectric of planarization; The piezoelectric membrane that on above-mentioned interlayer dielectric, forms; And the surface acoustic wave element that forms on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone.

According to this structure, can make the flattening surface of interlayer dielectric, make the piezoelectric membrane that on interlayer dielectric, forms keep smooth state and form.Like this, can be formed on the surface acoustic wave element that comprises the IDT electrode that forms on the piezoelectric membrane, the deviation, the characteristic surface of good acoustic wave device that do not have resonance frequency can be provided with good dimensional accuracy.In addition, by making the flattening surface of interlayer dielectric, also obtained to improve crystalline orientation, the increase electromechanical coupling factor k of piezoelectric membrane ²Effect.

In addition,, compare with situation about disposing side by side separately and can cut down area of chip, can make the surface acoustic wave device miniaturization owing on the IC zone, possess the surface acoustic wave element zone.

And then, by taking such structure, owing to shortening the length of arrangement wire that connects IC zone and surface acoustic wave element zone, so can expect to improve high frequency characteristics.

Description of drawings

Fig. 1 (a) is the schematic plan of the semiconductor wafer that uses in the manufacturing of surface acoustic wave device, (b) is the schematic plan of surface acoustic wave device.

Fig. 2 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 1st execution mode.

Fig. 3 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 1st execution mode.

Fig. 4 (a) and (b) are schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 1st execution mode.

Fig. 5 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 2nd execution mode.

Fig. 6 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 3rd execution mode.

Fig. 7 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 3rd execution mode.

Fig. 8 (a) and (b) are schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 3rd execution mode.

Fig. 9 (a) and (b) are schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 3rd execution mode.

Figure 10 is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 3rd execution mode.

Figure 11 (a) and (b) are schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 4th execution mode.

Figure 12 (a) is the schematic cross sectional view of the surface acoustic wave device of the 6th execution mode, (b) is its schematic side elevational view.

Figure 13 (a)～(d) is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 6th execution mode.

Figure 14 (a)～(d) is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 6th execution mode.

Figure 15 is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 6th execution mode.

Figure 16 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 7th execution mode.

Figure 17 (a)～(e) is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 8th execution mode.

Figure 18 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 8th execution mode.

Figure 19 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 8th execution mode.

Figure 20 is the schematic fragmentary cross-sectional view of manufacturing process of the surface acoustic wave device of expression the 8th execution mode.

Figure 21 (a) and (b), (c) are the schematic fragmentary cross-sectional views of manufacturing process of the surface acoustic wave device of expression the 9th execution mode.

Embodiment

Below, the execution mode of the present invention being specialized with reference to description of drawings.

(the 1st execution mode)

Before the manufacture method of the surface acoustic wave device that embodiments of the present invention are described, the summary situation of semiconductor wafer that just uses in manufacturing process and surface acoustic wave device describes.

Fig. 1 (a) is illustrated in the schematic plan of the semiconductor wafer that uses in the manufacturing of surface acoustic wave device, and Fig. 1 (b) is the schematic plan of surface acoustic wave device.

In the manufacture method of the surface acoustic wave device of embodiments of the present invention, in as the semiconductor wafer 2 of semiconductor substrate, form a plurality of surface acoustic wave devices 1, under the state of semiconductor wafer 2, carry out the manufacturing of surface acoustic wave device 1.

A surface acoustic wave device 1 possesses IC zone 10 and surface acoustic wave element zone 20, and is transversely arranged separately, and IC is electrically connected with surface acoustic wave element, constitutes a chip.Form semiconductor element (shown in Figure 2) on IC zone 10, it has and the 11 stacked same structures of general IC that Al is connected up.On the other hand, in surface acoustic wave element zone 20, form the SAW resonator that possesses broach shape IDT electrode 21 and reflector 22 as surface acoustic wave element 23.

Then, illustrate, constitute the manufacturing process of the surface acoustic wave device of a chip above-mentioned IC zone and the configuration side by side of surface acoustic wave element zone.

Fig. 2, Fig. 3, Fig. 4 are the schematic fragmentary cross-sectional views of the manufacturing process of explanation surface acoustic wave device, and manufacturing process is undertaken by the order from Fig. 2 to Fig. 4.

In Fig. 2 (a),, form a plurality of semiconductor elements 31 by existing known method in the IC zone of the semiconductor substrate 30 that forms by silicon.In addition, the IC zone on semiconductor substrate 30 and the boundary vicinity in surface acoustic wave element zone form the mute film 32 of a plurality of Al, carry out the adjustment of wiring density.

And, shown in Fig. 2 (b), on semiconductor substrate 30, form by SiO ₂The element insulating film 33 that forms makes semiconductor element 31 insulation.At this moment, not only in the IC zone, and also form element insulating film 33 in the surface acoustic wave element zone.

Like this, form the semiconductor element layer 45 that constitutes by semiconductor element 31 and element insulating film 33 in the IC zone.

In addition, element insulating film 33 is the uniform films of thickness, owing to form with methods such as sputters, produces step difference in part that forms the mute film 32 of semiconductor element 31 and Al and the part that does not have to form.

Then, shown in Fig. 2 (c),, imbed Al and form Al wiring 34 with semiconductor element 31 conductings by the part that etching is removed the element insulating film 33 on the semiconductor element 31 in the IC zone.Al connected up 34 o'clock in formation, also formed the mute film 35 of Al simultaneously.In addition, side by side form bed thickness with Al wiring 34 and the mute film 35 of Al and adjust film 36 in the surface acoustic wave element zone.Shown in Fig. 1 (b), bed thickness is adjusted the below that film 36 is located at the surface acoustic wave element 23 that is made of IDT electrode 21, reflector 22 that forms in the aftermentioned operation, to form the zone of the region projection of surface acoustic wave element 23, form by the position and the area that are included in the bed thickness adjustment film 36 formed zones to the thickness direction of surface acoustic wave device 1.

And, shown in Fig. 3 (a), in the IC zone and surface acoustic wave element zone form by SiO ₂The wiring dielectric film 37 that forms.

Like this, form the wiring layer 46 that constitutes by Al wiring 34 and wiring dielectric film 37 in the IC zone.

And then, shown in Fig. 3 (b), by in the IC zone and surface acoustic wave element zone form by Si ₃N ₄2 interlayer dielectrics 38 that form can improve the moisture resistance of IC.

Then, shown in Fig. 3 (c), by CMP (Chemical Mechanical Polishing: chemico-mechanical polishing) handle, to interlayer dielectric 38 grind interlayer dielectric 38 until IC zone and surface acoustic wave element zone flatten smooth till.At this moment, CMP handles and carries out under wafer state.It is that one side makes the lapping liquid of the molecule that mixed silica etc. and soup flow through the surface of grinding pad that this CMP handles, and one side by being pressed in the chemical grinding that carries out machinery on the pad, makes the processing method of wafer surface planarization with wafer.

Then, shown in Fig. 4 (a), on the interlayer dielectric 38 of handling planarization by CMP, in the IC zone and surface acoustic wave element zone form the piezoelectric membrane 39 that forms by ZnO.

Then, shown in Fig. 4 (b), on the piezoelectric membrane 39 in surface acoustic wave element zone, form surface acoustic wave element 40.Surface acoustic wave element 40 constitutes the SAW resonator of the IDT electrode 21 that possesses Fig. 1 shown in (b) and reflector 22.

Like this, can access on semiconductor substrate 30 IC zone and the transversely arranged surface acoustic wave device 1 that constitutes a chip in surface acoustic wave element zone.

Have again, also may be embodied as bed thickness adjusted that film 36 is arranged on the semiconductor substrate 30 or wiring dielectric film 37 on.In addition, also may be embodied as piezoelectric membrane 39 only is arranged on the surface acoustic wave element zone.And then, by the thickness of suitable adjustment element insulating film 33 and wiring dielectric film 37, also can be embodied as bed thickness adjustment film 36 is not set.

As mentioned above,, handle the flattening surface that makes interlayer dielectric 38, can make the piezoelectric membrane 39 that on interlayer dielectric 38, forms keep smooth states and form by CMP according to the manufacture method of the surface acoustic wave device 1 of present embodiment.Thus, can be formed on the smooth piezoelectric membrane 39 surface acoustic wave element 40 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 1.In addition, the planarization on the surface by interlayer dielectric 38, increases the electromechanical coupling factor k of surface acoustic wave element 40 at the crystalline orientation of the piezoelectric membrane 39 that also can be improved ²Effect.

In addition, on element insulating film 33 in the surface acoustic wave element zone or wiring dielectric film 37, bed thickness suitably is set adjusts film 36, can reduce the step difference in IC zone and surface acoustic wave element zone, can easily carry out the planarization of the interlayer dielectric 38 in the CMP processing.

And, because CMP handle to be to carry out under the wafer state of a plurality of surface acoustic wave devices possessing, handle so can carry out CMP efficiently.

In addition, by below surface acoustic wave element 40 and form bed thickness by position that comprises surface acoustic wave element 40 and area and adjust film 36, reduce to form the step difference of the part of surface acoustic wave element 40.Because reducing of this step difference reduced step difference and has been accompanied by the development that is tilted in the surface acoustic wave element zone, can form the good face of flatness.

And then, can be that the operation of same operation forms bed thickness adjustment film 36 by operation with the Al wiring that forms the IC zone, can form bed thickness efficiently and adjust film 36.

(the 2nd execution mode)

Then, as the 2nd execution mode, illustrate that (Spin On Glass: spin-on-glass) film forms the situation of the interlayer dielectric in the 1st execution mode by SOG.Is identical operation because the formation of (a) from Fig. 2 to Fig. 3 that illustrated in the 1st execution mode is connected up till the dielectric film 37, and its explanation of Therefore, omited uses Fig. 5 that the operation that it is later is described.Have again, on the structure member identical, mark same-sign with the 1st execution mode.

In Fig. 5 (a), on cloth line insulating layer 37, form sog film as interlayer dielectric 42.As the sog film of interlayer dielectric 42, be after applying the aqueous SOG material of for example inorganic system or organic system from 37 rotations of wiring dielectric film, to make solvent evaporates through high-temperature baking, SOG material polymerization reaction take place is formed.Have again, in the formation of this sog film, apply the SOG material, toast with wafer state.At this moment, by with the SOG coated materials on wiring dielectric film 37, be rotated coating, make the SOG material flow into the step difference place on wiring dielectric film 37 surfaces, can form thin smooth interlayer dielectric 42.

And, shown in Fig. 5 (b), on the interlayer dielectric 42 that forms by sog film, in the IC zone and surface acoustic wave element zone form the piezoelectric membrane 39 that forms by ZnO.

Then, shown in Fig. 5 (c), on the piezoelectric membrane 39 in surface acoustic wave element zone, form the surface acoustic wave element 40 that constitutes by IDT electrode and reflector.Like this, can access and on semiconductor substrate 30, make IC zone and the transversely arranged surface acoustic wave device 3 that constitutes a chip in surface acoustic wave element zone.

Like this, also can be enough sog film form interlayer dielectric 42, can be easily and obtain the interlayer dielectric 42 of planarization at an easy rate by using sog film.And, can make on interlayer dielectric 42 piezoelectric membrane 39 that forms keep smooth states and form, can form surface acoustic wave element 40 with good dimensional accuracy.Thus, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 3.

(the 3rd execution mode)

Then, as the 3rd execution mode, the situation that the multilayer Al wiring just is set in the wiring layer in IC zone describes.

Fig. 6, Fig. 7, Fig. 8, Fig. 9, Figure 10 are the schematic fragmentary cross-sectional views of the manufacturing process of explanation surface acoustic wave device, and manufacturing process is undertaken by the order from Fig. 6 to Figure 10.

In Fig. 6 (a),, form a plurality of semiconductor elements 51 with existing known method in the IC zone of the semiconductor substrate 50 that constitutes by silicon.In addition, the IC zone on semiconductor substrate 50 and the boundary vicinity in surface acoustic wave element zone form the mute film 52 of a plurality of Al, carry out the adjustment of wiring density.

And, shown in Fig. 6 (b), on semiconductor substrate 50, form by SiO ₂The element insulating film 53 that forms.At this moment, not only in the IC zone, and also form element insulating film 53 in the surface acoustic wave element zone.

Like this, form the semiconductor element layer 68 that constitutes by semiconductor element 51 and element insulating film 53 in the IC zone.

Element insulating film 53 is the uniform films of thickness, owing to form with methods such as sputters, produces step difference in part that is formed with the mute film 52 of semiconductor element 51 and Al and the part that does not form it.Particularly produce step difference on the border in IC zone and surface acoustic wave element zone.

Shown in Fig. 6 (c), the surface by CMP handles the element insulating film 53 that grinds the IC zone can reduce above-mentioned step difference.

Then, shown in Fig. 7 (a),, imbed Al and form 1Al wiring 54 with semiconductor element 51 conductings by the part that etching is removed the element insulating film 53 on the semiconductor element 51 in the IC zone.1Al connected up 54 o'clock in formation, also formed the mute film 55 of Al simultaneously.

In addition, shown in Fig. 7 (b), in the IC zone and surface acoustic wave element zone form by SiO ₂The 1st wiring dielectric film 56 that forms.

Then, shown in Fig. 7 (c),, reduce the step difference in IC zone and surface acoustic wave element zone by the surface that CMP handles the 1st wiring dielectric film 56 that grinds the IC zone.

Then, shown in Fig. 8 (a), on the 1st wiring dielectric film 56, form 2Al wiring 57 and the mute film 58 of Al.In addition, in the surface acoustic wave element zone, side by side form bed thickness with 2Al wiring 57 and the mute film 58 of Al and adjust film 59.Bed thickness is adjusted the place, below that film 59 is positioned at the surface acoustic wave element that is made of IDT electrode, reflector described later, with the region projection that the forms surface acoustic wave element zone to the thickness direction of surface acoustic wave device, form by being included in position and the area that bed thickness adjusts in the formed zone of film.

And, shown in Fig. 8 (b), forming by SiO ₂Behind the 2nd wiring dielectric film 60 that constitutes, the surface of handling the 2nd wiring dielectric film 60 that grinds the IC zone by CMP.

Then, shown in Fig. 9 (a), on the 2nd wiring dielectric film 60, form 3Al wiring 61 and the mute film 62 of Al, then, form by SiO ₂The 3rd wiring dielectric film 63 that constitutes.And, by the surface that CMP handles the 3rd wiring dielectric film 63 that grinds the IC zone, reduce the step difference in IC zone and surface acoustic wave element zone.

Like this, form the wiring layer 69 that constitutes by 1Al wiring 54,2Al wiring 57,3Al wiring the 61 and the 1st wiring dielectric film the 56, the 2nd wiring dielectric film the 60, the 3rd wiring dielectric film 63 in the IC zone.

And, shown in Fig. 9 (b), on the 3rd wiring dielectric film 63 in the surface acoustic wave element zone, form bed thickness and adjust film 64.Bed thickness is adjusted film 64 and bed thickness, and to adjust film 59 same, is positioned at the below of the surface acoustic wave element that is made of IDT electrode, reflector described later, formed by position that comprises surface acoustic wave element and area.Then, by in the IC zone and surface acoustic wave element zone form the interlayer dielectric 65 that constitutes by Si3N4, can improve the moisture resistance of IC.And, handle by CMP, grind interlayer dielectric 65 until IC zone and surface acoustic wave element zone smooth till.

Have, the CMP in the described so far present embodiment handles and carries out under wafer state again.

Then, as shown in figure 10, on the interlayer dielectric 65 of handling planarization by CMP, in the IC zone and surface acoustic wave element zone form the piezoelectric membrane 66 that constitutes by ZnO.Then, on the piezoelectric membrane 66 in surface acoustic wave element zone, form surface acoustic wave element 67.Surface acoustic wave element 67 constitutes the SAW resonator of the IDT electrode 21 that possesses Fig. 1 shown in (b) and reflector 22.

Like this, can access and on semiconductor substrate 50, make IC zone and the transversely arranged surface acoustic wave device 70 that constitutes a chip in surface acoustic wave element zone.

Have, bed thickness is adjusted

film

59,64 and also can be formed on any part on semiconductor substrate 50 or element insulating film 53 or the 1st wiring dielectric film the 56, the 2nd wiring dielectric film the 60, the 3rd wiring dielectric film 63 again.In addition, no matter how many layers wiring layer is, can both adjusts film by suitable formation bed thickness and implement.

As mentioned above,, handle the flattening surface that makes interlayer dielectric 65, can make the piezoelectric membrane 66 that on interlayer dielectric 65, forms keep smooth states and form by CMP according to the manufacture method of the surface acoustic wave device 70 of present embodiment.Thus, can be formed on the smooth piezoelectric membrane 66 surface acoustic wave element that comprises the IDT electrode 67 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 70.In addition, by making the flattening surface of interlayer dielectric 65, the electromechanical coupling factor k of the crystalline orientation of the piezoelectric membrane 66 that also can be improved, increase surface acoustic wave element 67 ²Effect.

In addition, on element insulating film 53 in the surface acoustic wave element zone or the 1st wiring dielectric film the 56, the 2nd wiring dielectric film the 60, the 3rd wiring dielectric film 63, bed thickness suitably is set adjusts

film

59,64, the step difference in IC zone and surface acoustic wave element zone can be reduced, the planarization of the interlayer dielectric 65 in the CMP processing can be easily carried out.

And then, respectively element insulating film 53 and the 1st wiring dielectric film the 56, the 2nd wiring dielectric film the 60, the 3rd wiring dielectric film 63 are carried out the CMP processing, reduce the step difference in IC zone and surface acoustic wave element zone, can easily utilize the planarization of CMP processing interlayer dielectric 65.This makes that under the situation of multilayer laminated Al wiring the IC zone alleviates with the expansion of the step difference in surface acoustic wave element zone, and the planarization of interlayer dielectric 65 is had effect.

And, be under the wafer state that possesses a plurality of surface acoustic wave devices 70, to carry out because CMP handles, handle so can carry out CMP efficiently.

In addition,, the step difference of the part that forms surface acoustic wave element 67 is reduced, can form the good face of flatness by below surface acoustic wave element 67 and by position that comprises surface acoustic wave element 67 and area, forming bed

thickness adjustment film

59,64.

And then, can be that the operation of same operation forms bed

thickness adjustment film

59,64 by operation with the Al wiring that forms the IC zone, can form bed thickness efficiently and adjust

film

59,64.

(the 4th execution mode)

Also can form interlayer dielectric in above-mentioned the 3rd execution mode by sog film.As the 4th execution mode, just the situation that forms the interlayer dielectric in the 3rd execution mode by sog film describes.Because the operation till formation the 3rd wiring dielectric film 63 of (a) from Fig. 6 to Fig. 9 that illustrated in the 3rd execution mode is identical operation, Figure 11 explanation operation is thereafter used in its explanation of Therefore, omited.The identical symbol of mark on the structure member identical with the 3rd execution mode is arranged again.

In Figure 11 (a), on the 3rd wiring dielectric film 63 in the surface acoustic wave element zone, form bed thickness and adjust film 64, reduce the step difference in IC zone and surface acoustic wave element zone.

Then, on the 3rd wiring dielectric film 63, form sog film as interlayer dielectric 72.Sog film as interlayer dielectric 72 is by after applying the aqueous SOG material of for example inorganic system or organic system from 63 rotations of the 3rd wiring dielectric film, makes solvent evaporates through high-temperature baking, and SOG material polymerization reaction take place is formed.Have again, in the formation of this sog film, under wafer state, apply the SOG material, toast.At this moment, by with the SOG coated materials on the 3rd wiring dielectric film 63, be rotated coating, make the SOG material flow into the step difference place on the 3rd wiring dielectric film 63 surfaces, can form thin smooth interlayer dielectric 72.

And, shown in Figure 11 (b), on the interlayer dielectric 72 that forms by sog film, in the IC zone and surface acoustic wave element zone form the piezoelectric membrane 66 that constitutes by ZnO.

Then, on the piezoelectric membrane 66 in surface acoustic wave element zone, form the surface acoustic wave element 67 that constitutes by IDT electrode and reflector.Do like this, can access and on semiconductor substrate 50, make IC zone and the transversely arranged surface acoustic wave device 71 that constitutes a chip in surface acoustic wave element zone.

Like this, also can form interlayer dielectric 72 by enough sog films,, can easily obtain the interlayer dielectric 72 of cheap planarization by using sog film.And, can make the piezoelectric membrane 66 that on interlayer dielectric 72, forms keep smooth state to form, can form surface acoustic wave element 67 with good dimensional accuracy.Thus, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 71.

(the 5th execution mode)

The execution mode of surface acoustic wave device of the present invention then, is described.The surface acoustic wave device of present embodiment is made by the manufacture method of the surface acoustic wave device in the above-mentioned execution mode 1～4.

Surface acoustic wave device 1 shown in Fig. 1 (b) possesses IC zone 10 and surface acoustic wave element zone 20.In IC zone 10, on semiconductor substrate, form semiconductor element, the stacked Al wiring 11 that is used to connect semiconductor element thereon.In addition, in order to adjust the Al wiring density, disposed the mute film 12 of Al.And, Al pad 13 is set, carry out and outside being electrically connected.In addition, the high-frequency circuits such as oscillating circuit that include the drive surfaces acoustic elecment in IC zone 10.

In surface acoustic wave element zone 20, form the SAW resonator that possesses IDT electrode 21 and reflector 22, in order to be provided with Al pad 24 with being electrically connected of outside as surface acoustic wave element 23.

Like this, on semiconductor substrate that IC zone 10 is transversely arranged with surface acoustic wave element zone 20, thus constitute incorporate surface acoustic wave device 1.

For example shown in Fig. 4 (b),, on element insulating film 33, form bed thickness and adjust film 36, reduce the step difference in IC zone 10 and surface acoustic wave element zone 20 in surface acoustic wave element zone 20.In addition, interlayer dielectric 38 is carried out CMP and handles, and makes IC zone 10 not have step difference and planarization with surface acoustic wave element zone 20.And, form piezoelectric membrane 39 on the interlayer dielectric 38 of planarization at this, and then form surface acoustic wave element 40 thereon.

Have again, bed thickness is adjusted film 36 below the surface acoustic wave element 40 that is made of IDT electrode 21 and reflector 22, and the region projection that will form surface acoustic wave element 40 is formed by the position and the area that are included in the bed thickness adjustment film 36 formed zones to the zone of the thickness direction of surface acoustic wave device 1.

Like this, owing to be formed flatly the surface of the interlayer dielectric 38 of surface acoustic wave device 1, can make the piezoelectric membrane 39 that on interlayer dielectric 38, forms keep smooth state to form.Thus, can be formed on the piezoelectric membrane 39 surface acoustic wave element that comprises the IDT electrode 40 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 1.In addition, by making the flattening surface of interlayer dielectric 38, the crystal property of the piezoelectric membrane 39 that also can be improved, increase electromechanical coupling factor k ²Effect.

In addition, adjust film 36 by on the element insulating film 33 in surface acoustic wave element zone or the dielectric film 37 that connects up, bed thickness being set suitably, can reduce the step difference in IC zone and surface acoustic wave element zone, utilize planarization such as CMP processing can easily carry out the planarization of interlayer dielectric 38.

And then, by below surface acoustic wave element, and form bed thickness by position that comprises surface acoustic wave element and area and adjust film 36, can reduce to form the step difference of surface acoustic wave element part, can form the good face of flatness.

Have again, in the above-described embodiment,, in the scope of the electric field that does not influence surface acoustic wave, also may be embodied in bed thickness adjustment film and open a plurality of holes though be to make bed thickness adjust film to form uniform film.

(the 6th execution mode)

Then, the surface acoustic wave device that possesses the surface acoustic wave element zone above the IC zone is described simply.

Figure 12 (a) is the schematic cross sectional view of surface acoustic wave device, and Figure 12 (b) is a schematic side elevation.

Surface acoustic wave device 100 possesses: the IC zone 110 that has formed semiconductor element and wiring on semiconductor substrate 130; The surface acoustic wave element zone 120 that forms above IC zone 110, IC and surface acoustic wave element are electrically connected to fetch and constitute a chip.

In surface acoustic wave element zone 120 piezoelectric membrane 139 is set, possesses surface acoustic wave element 123 thereon, this surface acoustic wave element 123 has the IDT electrode 121 and reflector 122 of broach shape.In addition, a plurality of Al pads 113 of configuration in this surface acoustic wave device 100 are electrically connected with IDT electrode 121 and IC by connecting Al wiring 124 from a part of Al pad 113.

Manufacturing process with regard to the surface acoustic wave device 100 of above structure describes.

Figure 13, Figure 14, Figure 15 are the schematic fragmentary cross-sectional views of the manufacturing process of explanation surface acoustic wave device, and manufacturing process is undertaken by the order from Figure 13 to Figure 15.

In Figure 13 (a), on the semiconductor substrate 130 that constitutes by silicon, form a plurality of semiconductor elements 131 and Al wiring 132 with known method so far.

And, shown in Figure 13 (b), on semiconductor substrate 130, form by SiO ₂The element insulating film 133 that constitutes, insulator-semiconductor element 131 and Al wiring 132.

Do like this, form the semiconductor element layer 145 that constitutes by semiconductor element 131 and element insulating film 133.Methods such as these element insulating film 133 usefulness sputters form.

Then, shown in Figure 13 (c),, imbed Al, form Al wiring 134,135, Al pad 136 with semiconductor element 131 conductings by the part that etching is removed the element insulating film 133 on the semiconductor element 131.

And, shown in Figure 13 (d), form by SiO from it ₂The wiring dielectric film 137 that constitutes.

Like this, form the wiring layer 146 that constitutes by Al wiring 134,135, Al pad 136 and the dielectric film 137 that connects up.

Then, shown in Figure 14 (a), on wiring dielectric film 137, form by Si ₃N ₄The interlayer dielectric 138 that constitutes.Here, the surface of interlayer dielectric 138 produces step difference according to semiconductor element under it 131 or having or not of Al wiring 132,134,135.This is owing to element insulating film 133, wiring dielectric film 137, interlayer dielectric 138 are the causes that form with the high methods such as sputter of film thickness uniformity.

Then, shown in Figure 14 (b), by CMP (Chemical Mechanical Polishing: chemico-mechanical polishing) handle, grind interlayer dielectric 138 till smooth.At this moment, CMP handles and carries out under wafer state.It is that one side makes the molecule that mixed silica etc. and the lapping liquid of soup flow through the surface of grinding pad that this CMP handles, and one side by being pressed on the pad, carries out mechanical chemical grinding, the processing method of wafer surface being carried out planarization with wafer.

Then, shown in Figure 14 (c), handling by CMP planarization interlayer dielectric 138 on, form the piezoelectric membrane 139 that constitutes by ZnO.

Then, shown in Figure 14 (d), the wiring dielectric film 137 of the top of etching Al pad 136, interlayer dielectric 138, piezoelectric membrane 139 form aperture portion 143.

And, as shown in figure 15,, above piezoelectric membrane 139, form and connect Al wiring 124 from the sidewall of aperture portion 143 from Al pad 136.

Then, on piezoelectric membrane 139, form surface acoustic wave element 123.Surface acoustic wave element 123 constitutes the SAW resonator that possesses IDT electrode 121 and reflector 122 shown in Figure 12 (a).

Like this, can obtain above the IC zone, possessing the surface acoustic wave element zone on the semiconductor substrate 130, constituting the surface acoustic wave device 100 of a chip.

As mentioned above, manufacture method according to the surface acoustic wave device 100 of present embodiment, handle to carry out planarization by the surface C MP that carries out, can make the piezoelectric membrane 139 that on interlayer dielectric 138, forms keep smooth state to form interlayer dielectric 138.Thus, can be formed on the smooth piezoelectric membrane 139 surface acoustic wave element 123 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 100.In addition, by making the flattening surface of interlayer dielectric 138, the crystalline orientation of piezoelectric membrane 139, the electromechanical coupling factor k of increase surface acoustic wave element 123 have also been obtained to improve ²Effect.And, because CMP handle to be to carry out under the wafer state of a plurality of surface acoustic wave devices possessing, handle so can carry out CMP efficiently.

(the 7th execution mode)

Then, as the 7th execution mode, illustrate that (Spin On Glass: spin-on-glass) film forms the situation of the interlayer dielectric in the 6th execution mode with SOG.Because what illustrated in the 6th execution mode is identical operation till the wiring dielectric film 137 that forms Figure 13, its explanation of Therefore, omited is with Figure 16 explanation operation thereafter.Have again, on the structure member identical, mark prosign with the 6th execution mode.

In Figure 16 (a), on wiring dielectric film 137, form sog film as interlayer dielectric 142.Sog film as interlayer dielectric 142 is by after applying the aqueous SOG material of for example inorganic system or organic system from 137 rotations of wiring dielectric film, makes solvent evaporates through high-temperature baking, and SOG material polymerization reaction take place is formed.Have again, in the formation of this sog film, under wafer state, apply the SOG material, toast.At this moment, by with the SOG coated materials on wiring dielectric film 137, be rotated coating, make the SOG material flow into the step difference on wiring dielectric film 137 surfaces, can form thin smooth interlayer dielectric 142.

And, shown in Figure 16 (b), on the interlayer dielectric 142 that forms with sog film, form the piezoelectric membrane 139 that constitutes by ZnO.

Then, shown in Figure 16 (c), the wiring dielectric film 137 of the top of etching Al pad 136, interlayer dielectric 142, piezoelectric membrane 139, form aperture portion 143, from Al pad 136, above piezoelectric membrane 139, form and connect Al wiring 124 from the sidewall of aperture portion 143.

And, on piezoelectric membrane 139, form surface acoustic wave element 123.

Like this, can access and above the IC zone, possessing the surface acoustic wave element zone on the semiconductor substrate 130, constituting the surface acoustic wave device 101 of a chip.

Like this, also can be enough sog film form interlayer dielectric 142, by use sog film can easily obtain cheap, planarization interlayer dielectric 142.And, can make the piezoelectric membrane 139 that on interlayer dielectric 142, forms keep smooth state to form, can form surface acoustic wave element 123 with good dimensional accuracy.Thus, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 101.

(the 8th execution mode)

Then, as the 8th execution mode, the situation that the multilayer Al wiring is set is described in the wiring layer in IC zone.

Figure 17, Figure 18, Figure 19, Figure 20 are the schematic fragmentary cross-sectional views of the manufacturing process of explanation surface acoustic wave device, and manufacturing process is undertaken by the order from Figure 17 to Figure 20.

In Figure 17 (a), on the semiconductor substrate 150 that constitutes by silicon, form a plurality of semiconductor elements 151 and Al wiring 152 with known method so far.

And, shown in Figure 17 (b), on semiconductor substrate 150, form by SiO ₂The element insulating film 153 that constitutes.

Like this, form the semiconductor element layer 168 that constitutes by semiconductor element 151 and element insulating film 153.

Because element insulating film 153 is the uniform films of thickness, form with methods such as sputters, so produced step difference with the part that does not form it in the part that forms semiconductor element 151 and Al wiring 152.

And, shown in Figure 17 (c), handle the surface of grinding element dielectric film 153 by CMP.Thus, can reduce above-mentioned step difference.

Then, shown in Figure 17 (d),, imbed the 1Al wiring 154,155 of Al formation and semiconductor element 151 conductings by the part that etching is removed the element insulating film 153 on the semiconductor element 151.

And, shown in Figure 17 (e), form by SiO ₂The 1st wiring dielectric film 156 that constitutes.

Then, shown in Figure 18 (a), handle the surface of grinding the 1st wiring dielectric film 156, reduce the step difference on the surface of the 1st wiring dielectric film 156 by CMP.

Then, shown in Figure 18 (b), on the 1st wiring dielectric film 156, form 2Al wiring 158.

And, shown in Figure 18 (c), forming by SiO ₂Behind the 2nd wiring dielectric film 160 that constitutes, handle the surface of grinding the 2nd wiring dielectric film 160 by CMP.

Similarly, on the 2nd wiring dielectric film 160, form 3Al wiring 162 and Al pad 161, after forming the 3rd wiring dielectric film 163, handle the surface of grinding the 3rd wiring dielectric film 163 by CMP.

Like this, form the wiring layer 169 that constitutes by 1Al wiring 154,2Al wiring 158,3Al wiring the 162 and the 1st wiring dielectric film the 156, the 2nd wiring dielectric film the 160, the 3rd wiring dielectric film 163.

Then, shown in Figure 19 (a), form by Si ₃N ₄The interlayer dielectric 165 that constitutes.And, shown in Figure 19 (b), handle by CMP, grind interlayer dielectric 165 till smooth.

Have, the CMP in the described before present embodiment handles and carries out under wafer state again.

Then, shown in Figure 19 (c), handle planarization by CMP interlayer dielectric 165 on, form the piezoelectric membrane 166 that constitutes by ZnO.

Then, as shown in figure 20, the 3rd wiring dielectric film 163 of etching Al pad 161 tops, interlayer dielectric 165, piezoelectric membrane 166, form aperture portion 159, from Al pad 161, above piezoelectric membrane 166, form and connect Al wiring 164 from the sidewall of aperture portion 159.And, on piezoelectric membrane 166, form surface acoustic wave element 167.

Like this, can access above the IC zone of semiconductor substrate 150 surface acoustic wave device 102 that possesses the surface acoustic wave element zone, constitutes a chip.

As mentioned above,, handle the flattening surface that makes interlayer dielectric 165, can make the piezoelectric membrane 166 that on interlayer dielectric 165, forms keep smooth state to form by CMP according to the manufacture method of the surface acoustic wave device 102 of present embodiment.Thus, can be formed on the smooth piezoelectric membrane 166 surface acoustic wave element that comprises the IDT electrode 167 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 102.In addition, by making the flattening surface of interlayer dielectric 165, the crystalline orientation of piezoelectric membrane 166, the electromechanical coupling factor k of increase surface acoustic wave element 167 have also been obtained to improve ²Effect.

And then, respectively element insulating film 153 and the 1st wiring dielectric film the 156, the 2nd wiring dielectric film the 160, the 3rd wiring dielectric film 163 are carried out the CMP processing, reduce step difference, can easily utilize the planarization of CMP processing to interlayer dielectric 165.This can reduce the expansion of step difference under the situation of multilayer laminated Al wiring, be effective to the planarization of interlayer dielectric 165.

And, be under the wafer state that possesses a plurality of surface acoustic wave devices 102, to carry out because CMP handles, handle so can carry out CMP efficiently.

(the 9th execution mode)

Then, as the 9th execution mode, illustrate that (Spin On Glass: spin-on-glass) film forms the situation of the interlayer dielectric in the 8th execution mode with SOG.Because what illustrate in the 8th execution mode is identical operation to forming till the 3rd wiring dielectric film 163 from Figure 17 to Figure 18, it illustrates the Therefore, omited, with Figure 21 thereafter operation is described.The identical symbol of mark on the structure member identical with the 8th execution mode is arranged again.

In Figure 21 (a), on the 3rd wiring dielectric film 163, form sog film as interlayer dielectric 157.As the sog film of interlayer dielectric 157 is by after applying the aqueous SOG material of for example inorganic systems or organic system from 163 rotations of the 3rd wiring dielectric film, makes solvent evaporates through high-temperature baking, makes SOG material polymerization reaction take place and forms.Have again, in the formation of this sog film, under wafer state, apply the SOG material, toast.At this moment, the SOG coated materials on the 3rd wiring dielectric film 163, is applied by rotation, make the SOG material flow into the step difference place on the 3rd wiring dielectric film 163 surfaces, can form thin smooth interlayer dielectric 157.

And, shown in Figure 21 (b), on the interlayer dielectric 157 that forms by sog film, form the piezoelectric membrane 166 that constitutes by ZnO.

Then, shown in Figure 21 (c), the 3rd wiring dielectric film 163 of the top of etching Al pad 161, interlayer dielectric 157, piezoelectric membrane 166, form aperture portion 159, from Al pad 161, above piezoelectric membrane 166, form and connect Al wiring 164 from the sidewall of aperture portion 159.And, on piezoelectric membrane 166, form surface acoustic wave element 167.

Like this, can access and above the IC zone, possessing the surface acoustic wave element zone on the semiconductor substrate 150, constituting the surface acoustic wave device 103 of a chip.

Like this, also can form interlayer dielectric 157 by enough sog films,, can easily obtain interlayer dielectric 157 cheap, planarization by using sog film.And, can make the piezoelectric membrane 166 that on interlayer dielectric 157, forms keep smooth state to form, can form surface acoustic wave element 167 with good dimensional accuracy.Thus, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 103.

(the 10th execution mode)

Then, the execution mode that possesses the surface acoustic wave device in surface acoustic wave element zone above the IC zone of the present invention is described.The surface acoustic wave device of present embodiment is made (with reference to Figure 12) by the manufacture method of the surface acoustic wave device in the above-mentioned execution mode 6～9.

For example, surface acoustic wave device 100 as shown in figure 15 is such, owing to be formed flatly the surface of the interlayer dielectric 138 of surface acoustic wave device 100, can make the piezoelectric membrane 139 that forms on interlayer dielectric 138 keep smooth state to form.Thus, can be formed on the piezoelectric membrane 139 surface acoustic wave element that comprises the IDT electrode 123 that forms with good dimensional accuracy, can provide do not have the resonance frequency deviation, characteristic surface of good acoustic wave device 100.In addition, by making the flattening surface of interlayer dielectric 138, also obtained to improve crystal property, the increase electromechanical coupling factor k of piezoelectric membrane 139 ²Effect.

In addition,, compare, can cut down area of chip, can make the surface acoustic wave device miniaturization with situation about disposing side by side separately owing on the IC zone, possess the surface acoustic wave element zone.

And then, by adopting such structure,, can expect to improve high frequency characteristics owing to shortened the length of arrangement wire that connects IC zone and surface acoustic wave element zone.

Have again, also can be enough sog film form wiring dielectric film in the wiring layer of present embodiment, implement the planarization on wiring layer surface.

In addition, in execution mode, just use silicon to be illustrated, in addition, also can use for example Ge, SiGe, SiC, SiSn, PbS, GaAs, InP, GaP, GaN, ZnSe etc. as the situation of the material of semiconductor substrate.

In addition, in execution mode, just use ZnO to be illustrated, in addition, for example also can use AlN etc. as the situation of the material of piezoelectric membrane.

And then, in execution mode, be illustrated as the situation of surface acoustic wave element, but also can constitute surface acoustic wave filter with regard to the SAW resonator.

Claims

1, a kind of manufacture method of surface acoustic wave device, be on semiconductor substrate, to possess the IC zone constitutes the surface acoustic wave device of a chip with the surface acoustic wave element zone, with their configurations arranged side by side respectively manufacture method at least, it is characterized in that possessing following operation:

Above-mentioned IC zone on above-mentioned semiconductor substrate forms the operation of semiconductor element layer, and this semiconductor element layer possesses semiconductor element and the element insulating film that covers above-mentioned semiconductor element;

Form the operation of wiring layer on above-mentioned semiconductor element layer, this wiring layer will be by carrying out with a plurality of wirings that are connected of above-mentioned semiconductor element and making the wiring dielectric film that insulate between above-mentioned wiring carry out stackedly constituting;

The said elements dielectric film that will constitute above-mentioned semiconductor element layer in above-mentioned each operation in above-mentioned surface acoustic wave element zone carries out stacked with the above-mentioned wiring dielectric film that constitutes above-mentioned wiring layer;

On the wiring dielectric film in above-mentioned IC zone and above-mentioned surface acoustic wave element zone, form the surface operation of the interlayer dielectric of planarization;

On above-mentioned interlayer dielectric, form the operation of piezoelectric membrane; And

Form the operation of surface acoustic wave element on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone.

2, the manufacture method of surface acoustic wave device as claimed in claim 1 is characterized in that:

The above-mentioned formation surface operation of the interlayer dielectric of planarization is the operation of its surface being carried out chemical mechanical polish process after forming interlayer dielectric.

3, the manufacture method of surface acoustic wave device as claimed in claim 1 is characterized in that:

The above-mentioned formation surface operation of the interlayer dielectric of planarization is the operation that forms the spin-on-glass film.

4, as the manufacture method of any one described surface acoustic wave device in the claim 1 to 3, it is characterized in that:

Have on the above-mentioned semiconductor substrate in above-mentioned surface acoustic wave element zone or said elements dielectric film or above-mentioned wiring dielectric film on, the bed thickness that forms one deck is at least adjusted the operation of film.

5, the manufacture method of surface acoustic wave device as claimed in claim 4 is characterized in that:

Above-mentioned bed thickness is adjusted the below that film is provided in above-mentioned surface acoustic wave element, and, the region projection that forms above-mentioned surface acoustic wave element is formed by the position and the area that are included in the zone that forms above-mentioned bed thickness adjustment film to the zone on the thickness direction of above-mentioned surface acoustic wave device.

6, as the manufacture method of claim 4 or 5 described surface acoustic wave devices, it is characterized in that:

Above-mentioned formation bed thickness is adjusted the operation of film and the operation of above-mentioned formation wiring is same operation, and above-mentioned bed thickness is adjusted film and formed with the above-mentioned wiring with one deck.

7, as the manufacture method of any one described surface acoustic wave device in the claim 1 to 6, it is characterized in that:

Comprise: after forming said elements dielectric film and above-mentioned wiring dielectric film, the operation of chemical mechanical polish process is carried out on the surface of said elements dielectric film and above-mentioned wiring dielectric film, perhaps form operation as the above-mentioned spin-on-glass film of said elements dielectric film and above-mentioned wiring dielectric film.

8, as the manufacture method of any one described surface acoustic wave device in the claim 1 to 7, it is characterized in that:

Carry out above-mentioned chemical mechanical polish process under the wafer state of a plurality of above-mentioned surface acoustic wave devices or form above-mentioned spin-on-glass film possessing.

9, a kind of surface acoustic wave device, it disposes the IC zone at least side by side and constitutes a chip with the surface acoustic wave element zone on semiconductor substrate, it is characterized in that:

Possess:

Semiconductor element layer, this semiconductor element layer IC zone on above-mentioned semiconductor substrate is formed with semiconductor element and the above-mentioned semiconductor element of covering and arrives the element insulating film in above-mentioned surface acoustic wave element zone;

Wiring layer, this wiring layer is by forming with the wiring that is connected of above-mentioned semiconductor element and the wiring dielectric film that makes insulation between above-mentioned wiring and arrive above-mentioned surface acoustic wave element zone stacked carrying out on the above-mentioned semiconductor element layer;

Interlayer dielectric, this interlayer dielectric forms on the wiring dielectric film in above-mentioned IC zone and above-mentioned surface acoustic wave element zone, and the surface is planarization;

Ask the piezoelectric membrane that forms on the dielectric film at above-mentioned layer; And

The surface acoustic wave element that forms on the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone.

10, surface acoustic wave device as claimed in claim 9 is characterized in that:

On the above-mentioned semiconductor substrate in above-mentioned surface acoustic wave element zone or on said elements dielectric film or the above-mentioned wiring dielectric film, form thick at least from level to level adjustment film.

11, surface acoustic wave device as claimed in claim 10 is characterized in that:

Above-mentioned bed thickness is adjusted the below that film is provided in above-mentioned surface acoustic wave element, and the formed region projection of above-mentioned surface acoustic wave element is formed by the position and the area that are included in the formed zone of above-mentioned bed thickness adjustment film to the zone on the thickness direction of above-mentioned surface acoustic wave device.

12, a kind of manufacture method of surface acoustic wave device, be on semiconductor substrate, to possess IC zone and surface acoustic wave element zone at least, on above-mentioned IC zone, dispose above-mentioned surface acoustic wave element zone, constitute the manufacture method of the surface acoustic wave device of a chip, it is characterized in that possessing:

Above-mentioned IC zone on above-mentioned semiconductor substrate forms the operation possess semiconductor element and the semiconductor element layer of the element insulating film that covers above-mentioned semiconductor element;

Form the operation of wiring layer on above-mentioned semiconductor element layer, this wiring layer will carry out with a plurality of wirings that are connected of above-mentioned semiconductor element and make the wiring dielectric film that insulate between above-mentioned wiring carry out stacked and constitute;

On above-mentioned wiring layer, form the surface operation of the interlayer dielectric of planarization;

On the above-mentioned piezoelectric membrane in above-mentioned surface acoustic wave element zone, form the operation of surface acoustic wave element.

13, the manufacture method of surface acoustic wave device as claimed in claim 12 is characterized in that:

14, the manufacture method of surface acoustic wave device as claimed in claim 12 is characterized in that:

15, as the manufacture method of any one described surface acoustic wave device in the claim 12 to 14, it is characterized in that:

16, as the manufacture method of any one described surface acoustic wave device in the claim 12 to 15, it is characterized in that:

Under the state of the wafer that possesses a plurality of above-mentioned surface acoustic wave devices, carry out above-mentioned chemical mechanical polish process or form above-mentioned spin-on-glass film.

17, a kind of surface acoustic wave device, it possesses IC zone and surface acoustic wave element zone at least on semiconductor substrate, and the above-mentioned surface acoustic wave element of configuration zone constitutes a chip on above-mentioned IC zone, it is characterized in that this surface acoustic wave device possesses:

Semiconductor element layer, this semiconductor element layer IC zone on above-mentioned semiconductor substrate is formed with semiconductor element and covers the element insulating film of above-mentioned semiconductor element;

Wiring layer, this wiring layer on the above-mentioned semiconductor element layer to carrying out with the wiring that is connected of above-mentioned semiconductor element and making the above-mentioned wiring dielectric film that insulate between above-mentioned wiring carry out stacked and form;

The surface that forms on the wiring dielectric film in above-mentioned IC zone is the interlayer dielectric of planarization;

The piezoelectric membrane that on above-mentioned interlayer dielectric, forms; And