CN1804115A - Method for preparing n type CVD co-doped diamond film - Google Patents
Method for preparing n type CVD co-doped diamond film Download PDFInfo
- Publication number
- CN1804115A CN1804115A CN 200610023442 CN200610023442A CN1804115A CN 1804115 A CN1804115 A CN 1804115A CN 200610023442 CN200610023442 CN 200610023442 CN 200610023442 A CN200610023442 A CN 200610023442A CN 1804115 A CN1804115 A CN 1804115A
- Authority
- CN
- China
- Prior art keywords
- type
- diamond film
- cvd
- doped diamond
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The preparation method for n-type CVD co-doped diamond film comprises: with liquid acetone as carbon source, and solid B2O3 liquid (CH3)2S2 as the doped source for p-type B and n-type S respectively; doping two said atoms into diamond simultaneously with microwave plasma CVD technique; pretreating the silicon substrate to put in reaction chamber of microwave heater; vacuumizing the chamber to fill H2 and feed carbon-source gas and doped gas from chamber top; generating H plasma, active H and active group with C, B and S; adjusting gas flow to control pressure and doped atom concentration. This invention improves film properties comprehensively.
Description
Technical field
The present invention relates to the preparation method in a kind of material technology field, specifically is a kind of preparation method of n type CVD co-doped diamond film.
Background technology
Diamond is a kind of wide-band gap material (E
g=5.5eV), its electronics and hole mobility are very high, are respectively 2000cm under the room temperature
2/ V.S and 1600cm
2/ V.S, its excellent power, heat, optical property and chemical stability in addition, diamond is the ideal semiconductor material.The technology comparative maturity of p type diamond semiconductor film, its specific conductivity can reach 10
3/ Ω cm, hole mobility reaches 1500cm
2/ V.S, and be used to prepare semiconducter device such as schottky diode and field effect transistor.But chemical vapor deposition (CVD) diamond n type mixes and is unsuccessful, and the n type doping of high conductivity is most important in the application aspect the semi-conductor for the CVD diamond.
Find by prior art documents, people such as Okano are at " " Apply Physics A " (" Applied Physics A) " 1990, in " Synthesis of n-Type Semiconducting DiamondFilm Using Diphosphorous Pentaoxide As the Doping Source " (is that doped source prepares n type diamond thin with the Vanadium Pentoxide in FLAKES) of delivering on the 51:344-346, with P
2O
5Be doping agent, with the synthetic n type diamond thin of hot filament CVD (HFCVD), the doping content of phosphorus reaches 10
15Cm
-3, but its specific conductivity is very low, and about 10
-4/ Ω cm.People such as Nakazawa are at " Appl.Phys.Lett " (" Applied Physics wall bulletin ") 2003, the test of " the Cathodoluminescence and Hall-effect measurements in sulfur-dopedchemical-vapor-deposited diamond " that delivers on the 82:2074-2077 (adamantine cathodeluminescence of sulfur doping CVD and the test of Hall effect) shows, the diamond thin conduction type of sulfur doping is the n type most of the time, carrier concentration is bigger with variation of temperature, but present p type conduction sometimes, do not have ideal results.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, propose a kind of preparation method of n type CVD co-doped diamond film.The present invention utilizes chemical vapour deposition technique, adopt the method for codoped (p type foreign atom and n type foreign atom mix simultaneously), the n type that is implemented in the CVD diamond mixes, on the existing adulterated level of n type, comprehensively improve specific conductivity, electronic mobility and the carrier concentration of doping film, obtain the n type diamond thin of high conductivity.
The present invention is achieved by the following technical solutions, the present invention is to be carbon source with aqueous acetone, be respectively the doped source of boron atom (p type) and sulphur atom (n type) with solid-state boron trioxide and liquid dimethyl base two sulphur, on silicon substrate, prepare n type codoped CVD diamond thin with microwave plasma CVD (MPCVD) technology.At first silicon substrate is carried out pre-treatment, place the microwave heating installation reaction chamber then, after vacuumizing, reaction chamber charges into hydrogen, be used to produce heating plasma bombardment surface of silicon, the silicon substrate temperature is controlled by the position of regulating microwave power and silicon substrate, and temperature is by being positioned at the thermocouple measurement at the substrate pedestal back side.Top feed-in carbon-source gas and doped source gas (p type and n type foreign atom) by reaction chamber, under the effect of microwave, produce active hydrogen atom and carbonaceous active group, control the pressure of reaction atmosphere and the concentration of doped source by the adjustments of gas flow, the codoped n type diamond thin that preparation has high conductivity.
The present invention is applicable to the diamond thin preparation, and the thickness of its film is the 1.0-3.0 micron.
After the reaction chamber of the present invention in device vacuumizes, charge into a certain amount of hydrogen, reaction chamber base vacuum degree is higher than 1 * 10
-3Pa, the pressure that charges into hydrogen is 1-3kPa.Its role is to: the hydrogen plasma of generation bombards cleaning to surface of silicon, and active hydrogen atom is the promotor of diamond film.
The described concentration of controlling the pressure and the foreign atom of reaction atmosphere by the adjustments of gas flow, concrete parameter is: gas flow is controlled between the 100-120 ml/min, the air pressure of reaction atmosphere is 1-3kPa, acetone/hydrogen is 1-4%, sulphur/carbon is 1000-4000ppm, and boron/sulphur is 0.02-0.5ppm.
Described microwave action, its power are between the 700W-1000W.
Described n type CVD co-doped diamond film, its specific conductivity is in 1-10/ Ω cm scope.
P and s is two kinds of donor impurities more likely, and they all have less activation energy, and its shortcoming is that the diamond lattice distortion is bigger after mixing phosphorus, cause going down more greatly of mobility, and sulphur solubleness in diamond lattice is less, and more current carrier can not be provided.These shortcoming can be by codoped the in addition certain compensation of method.
The present invention proposes first to realize CVD diamond high conductivity n type epitaxial film with the method for codoped, selects suitable codoped to studying.Codoped suitable in the diamond lattice reduces the lattice distortion that causes because of the difference between single foreign atom and the base carbon atomic radius to meeting, thereby improves perfection of lattice, helps the raising of mobility; Suitable codoped will be to improving the solubleness of donor impurity in diamond; Suitable codoped because coulomb interaction may be combined with each other and enter lattice, changes the position of donor level in the forbidden band between them during to donor impurity and acceptor impurity in this way, reduces ionized activation energy.The realization of this scheme promotes the application of CVD diamond at semiconductor applications greatly.
In the present invention, p type and n type doping agent are dissolved in the acetone, with the hydrogen Bubbling method it are carried and enter reaction chamber.Compare with the single-element doping, adopt its carrier concentration of n type CVD diamond thin of this technology preparation to improve 2 orders of magnitude, carrier mobility increases 3-10 doubly.
Embodiment
Content in conjunction with the inventive method provides following examples:
Embodiment 1
Silicon substrate was ground 20 minutes with diamond paste, place the acetone soln ultrasonic vibration five minutes that contains 0.5 μ m boart boart then, clean with ionized water and put into reaction chamber after drying up, the microwave reaction chamber is evacuated to 1 * 10
-3Pa charges into the hydrogen of 3kPa pressure.Opening power is the microwave source of 700W, and behind the hydrogen plasma build-up of luminance, temperature is raised to 750 ℃ in 10 seconds, constant temperature 3 minutes.Feed reactant gases (hydrogen, acetone, boron source and sulphur source), begin the CVD depositing diamond film after adjusting chamber pressure, processing parameter is: reaction atmosphere pressure 1kPa, total gas flow rate 100 ml/min, acetone/hydrogen is 2% (volume ratio), sulphur/carbon is 1000ppm (atomicity ratio), and boron/sulphur is 0.02 (atom number ratio).The conduction type of film is the n type, and the conduction intensity of activation is 0.30eV, and Hall coefficient is 8.2cm
2V
-1s
-1, carrier concentration is 5.3 * 10
16Cm
-3
Embodiment 2
With the silicon carbide mixed grinding of diamond paste and 0.5 μ m 15 minutes, ultrasonic cleaning in acetone soln was then put into reaction chamber after drying up with silicon substrate, and the microwave reaction chamber is evacuated to 1 * 10
-3Pa charges into the hydrogen of 3kPa pressure.Opening power is the microwave source of 850W, and behind the hydrogen plasma build-up of luminance, temperature is raised to 750 ℃ in 10 seconds, constant temperature 3 minutes.Feed reactant gases (hydrogen, acetone, boron source and sulphur source), begin the CVD depositing diamond film after adjusting chamber pressure, processing parameter is: reaction atmosphere pressure 2kPa, total gas flow rate 110 ml/min, acetone/hydrogen is 2% (volume ratio), sulphur/carbon is 2000ppm (atom number ratio), and boron/sulphur is 0.2ppm (atomicity ratio).The conduction type of film is the n type, and the conduction intensity of activation is 0.31eV, and Hall coefficient is 70.1cm
2V
-1s
-1, carrier concentration is 2.92 * 10
18Cm
-3
Embodiment 3
The silicon carbide of silicon substrate with 0.5 μ m was ground 15 minutes, and ultrasonic cleaning in acetone soln is then put into reaction chamber after drying up, and the microwave reaction chamber is evacuated to 1 * 10
-3Pa charges into the hydrogen of 3kPa pressure.Opening power is the microwave source of 1000W, and behind the hydrogen plasma build-up of luminance, temperature is raised to 750 ℃ in 10 seconds, constant temperature 3 minutes.Feed reactant gases (hydrogen, acetone, boron source and sulphur source), begin the CVD depositing diamond film after adjusting chamber pressure, processing parameter is: reaction atmosphere pressure 3kPa, total gas flow rate 120 ml/min, acetone/hydrogen is 3% (volume ratio), and sulphur/carbon is that 4000ppm (atomicity ratio) boron/sulphur is 0.5ppm (atom number ratio).The conduction type of film is the n type, and the conduction intensity of activation is 0.33eV, and Hall coefficient is 29.1cm
2V
-1s
-1, carrier concentration is 3.6 * 10
14Cm
-3
Claims (6)
1, a kind of preparation method of n type CVD co-doped diamond film, it is characterized in that, with the aqueous acetone is carbon source, solid-state boron trioxide and liquid dimethyl base two sulphur are respectively the doped source of p type boron atom and n type sulphur atom, adopt the microwave plasma CVD technology that p type boron atom and two kinds of foreign atoms of n type sulphur atom are incorporated into acquisition codoped n type CVD diamond thin in the diamond crystal simultaneously: at first silicon substrate to be carried out pre-treatment, place the reaction chamber of microwave heating installation then, after vacuumizing, reaction chamber charges into hydrogen, top feed-in carbon-source gas and p type and n type doped source gas by reaction chamber, under microwave action, produce hydrogen plasma, active hydrogen atom and carbon containing, boron, the active group of sulphur, control the concentration of the pressure and the foreign atom of reaction atmosphere by the adjustments of gas flow, prepare n type CVD co-doped diamond film.
2, the preparation method of n type CVD co-doped diamond film according to claim 1 is characterized in that, charges into hydrogen after described reaction chamber vacuumizes, and is specially: reaction chamber base vacuum degree is higher than or equals 1 * 10
-3Pa, the pressure that charges into hydrogen is 1-3KPa.
3, the preparation method of n type CVD co-doped diamond film according to claim 1, it is characterized in that, the described concentration of controlling the pressure and the foreign atom of reaction atmosphere by the adjustments of gas flow, concrete parameter is: gas flow is controlled between the 100-120 ml/min, the air pressure of reaction atmosphere is 1-3kPa, acetone/hydrogen is 1-4%, and sulphur/carbon is 1000-4000ppm, and boron/sulphur is 0.02-0.5ppm.
4, the preparation method of n type CVD co-doped diamond film according to claim 1 is characterized in that, described microwave action, its power are between the 700W-1000W.
5, the preparation method of n type CVD co-doped diamond film according to claim 1 is characterized in that, described n type CVD co-doped diamond film, and its specific conductivity is in 1-10/ Ω cm scope.
6, the preparation method of n type CVD co-doped diamond film according to claim 1 is characterized in that, described n type CVD co-doped diamond film, and the thickness of its film is the 1.0-3.0 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100234423A CN100390316C (en) | 2006-01-19 | 2006-01-19 | Method for preparing n type CVD co-doped diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100234423A CN100390316C (en) | 2006-01-19 | 2006-01-19 | Method for preparing n type CVD co-doped diamond film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1804115A true CN1804115A (en) | 2006-07-19 |
| CN100390316C CN100390316C (en) | 2008-05-28 |
Family
ID=36866256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100234423A Expired - Fee Related CN100390316C (en) | 2006-01-19 | 2006-01-19 | Method for preparing n type CVD co-doped diamond film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100390316C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127751A (en) * | 2011-01-11 | 2011-07-20 | 大连理工大学 | Boron-doped diamond micro-nano material with columnar array structure and preparation method thereof |
| CN103695863A (en) * | 2013-12-09 | 2014-04-02 | 四川大学 | Preparation method of boron-doped diamond film/carbon film composite electrode material |
| CN109913857A (en) * | 2019-04-26 | 2019-06-21 | 上海金铎禹辰水环境工程有限公司 | A kind of doped structure diamond thin and preparation method thereof |
| CN110565066A (en) * | 2019-09-17 | 2019-12-13 | 北京阿尔玛斯科技有限公司 | Co-doped diamond, preparation method thereof, semiconductor material and device |
| CN111593318A (en) * | 2020-07-13 | 2020-08-28 | 内蒙古科技大学 | Diamond nanocrystalline/nitrogen-doped silicon carbide interface phase n-type semiconductor composite film and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2726579A1 (en) * | 1994-11-07 | 1996-05-10 | Neuville Stephane | PROCESS FOR DEPOSITING A PROTECTIVE COATING OF THE PSEUDO CARBON DIAMOND AMORPHOUS TYPE |
| GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
-
2006
- 2006-01-19 CN CNB2006100234423A patent/CN100390316C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127751A (en) * | 2011-01-11 | 2011-07-20 | 大连理工大学 | Boron-doped diamond micro-nano material with columnar array structure and preparation method thereof |
| CN102127751B (en) * | 2011-01-11 | 2012-12-26 | 大连理工大学 | Boron-doped diamond micro-nano material with columnar array structure and preparation method thereof |
| CN103695863A (en) * | 2013-12-09 | 2014-04-02 | 四川大学 | Preparation method of boron-doped diamond film/carbon film composite electrode material |
| CN103695863B (en) * | 2013-12-09 | 2016-04-13 | 四川大学 | The preparation method of a kind of boron-doped diamond film/carbon film combination electrode material |
| CN109913857A (en) * | 2019-04-26 | 2019-06-21 | 上海金铎禹辰水环境工程有限公司 | A kind of doped structure diamond thin and preparation method thereof |
| CN110565066A (en) * | 2019-09-17 | 2019-12-13 | 北京阿尔玛斯科技有限公司 | Co-doped diamond, preparation method thereof, semiconductor material and device |
| CN110565066B (en) * | 2019-09-17 | 2022-04-19 | 北京阿尔玛斯科技有限公司 | Co-doped diamond, preparation method thereof, semiconductor material and device |
| CN111593318A (en) * | 2020-07-13 | 2020-08-28 | 内蒙古科技大学 | Diamond nanocrystalline/nitrogen-doped silicon carbide interface phase n-type semiconductor composite film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100390316C (en) | 2008-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Davis | Thin films and devices of diamond, silicon carbide and gallium nitride | |
| Fan et al. | p-Type ZnO materials: Theory, growth, properties and devices | |
| Nishizawa et al. | Silicon molecular layer epitaxy | |
| Xie et al. | Preparation and characterization of SiCN films | |
| Gotoh et al. | Low temperature growth of gallium nitride | |
| JP2002057109A (en) | Silicon carbide-manufacturing method, silicon carbide, and semiconductor device | |
| JP4020748B2 (en) | Manufacturing method of solar cell | |
| Kuech et al. | Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs | |
| CN100390316C (en) | Method for preparing n type CVD co-doped diamond film | |
| Boo et al. | High vacuum chemical vapor deposition of cubic SiC thin films on Si (001) substrates using single source precursor | |
| Longo et al. | Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | |
| CN100366789C (en) | Low temperature method for preparing Nano crystal thin film of semiconductor in Znl-xMgxO structure of wurtzite | |
| Xu et al. | Gas source molecular epitaxy of Ge1− ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides | |
| CN115232615B (en) | Preparation method of microcrystalline diamond crystal grain with adjustable silicon vacancy color center luminous intensity | |
| CN103938183B (en) | A kind of method preparing high-quality ZnO material | |
| Wang et al. | A facile route to arsenic-doped p-type ZnO films | |
| Liu et al. | Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System | |
| JP2004343133A (en) | Manufacturing method of silicon carbide, silicon carbide, and semiconductor device | |
| Weng et al. | Characterizations of arsenic-doped zinc oxide films produced by atmospheric metal-organic chemical vapor deposition | |
| Comfort et al. | I n situ arsenic doping of epitaxial silicon at 800° C by plasma enhanced chemical vapor deposition | |
| Pung et al. | In situ doping of ZnO nanowires using aerosol-assisted chemical vapour deposition | |
| Xu et al. | CMOS compatible in-situ n-type doping of ge using new generation doping agents P (MH3) 3 and As (MH3) 3 (M= Si, Ge) | |
| Wan-lu et al. | Growth of Oriented Heteroepitaxial Diamond Films on Si (100) via Electron Emission in Hot Filament Chemical Vapor Deposition | |
| Monna et al. | Silicon thin films obtained by rapid thermal atmospheric pressure chemical vapour deposition | |
| Kim et al. | Nitrogen-doping effect on single-crystal diamond synthesis by HFCVD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20090424 Address after: 690 Jiangchuan Road, Minhang District, Shanghai, zip code: 200240 Co-patentee after: Shanghai Angdian Industry Co., Ltd Patentee after: Shanghai Dian Ji University Co-patentee after: Shanghai ang Electromechanical Science and Technology Development Co., Ltd. Address before: No. 1201, Jiangchuan Road, Shanghai, China: 200245 Patentee before: Shanghai Dianji University |
|
| CI01 | Correction of invention patent gazette |
Correction item: Patentee Correct: Shanghai Angdian Electromechanical Science and Technology Development Co., Ltd False: Shanghai ang Electromechanical Science and Technology Development Co., Ltd. Number: 21 Page: 1778 Volume: 25 |
|
| ERR | Gazette correction |
Free format text: CORRECT: PATENTEE; FROM: SHANGHAI CITY ANGDIAN MECHANO-ELECTRICAL DEVELOPMENT CO.,LTD. TO: SHANGHAIANGDIAN MACHINERY ELECTROMECHANICAL DEVELOPMENT CO., LTD. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080528 Termination date: 20150119 |
|
| EXPY | Termination of patent right or utility model |