CN1803596A - Controllable hydrothermal constant pressure synthesis method for preparation of boron-carbon-nitrogen material - Google Patents
Controllable hydrothermal constant pressure synthesis method for preparation of boron-carbon-nitrogen material Download PDFInfo
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Abstract
The controllable hydrothermal constant-pressure synthesis method for boron carbonitride material comprises: treating the deionized water, preparing liquids for boron resource, carbon source and nitrogen source respectively; putting into the kettle; forcing 20~2000MPa pressure then heating the kettle to 240~1000Deg with 0.01~60Deg/min speed for reaction 6~480h. Wherein, it can adjust and control the system temperature and pressure independently as well as the reaction speed and direction. All the product of diamond, cubic boron nitride and carbonitride crystal block have wide application.
Description
Technical field
The present invention relates to a kind of hydrothermal constant pressure synthesis method that controllably prepares boron-carbon-nitrogen material, belong to chemical industry and field of new.
Background technology
In boron carbon nitrogen series compound, between atom with sp
3The cubic boron nitride of hybrid form be combined into, diamond and carbonitride are not only good superhard material, and be the broad stopband high temperature semiconductors of excellent performance, they have very high using value in daily life, mechanical workout, oil production, high temperature high power and development of short wavelength's semiconductor photoelectronic device and national defense industry, be the hi-tech material that a class will exert far reaching influence to our life.
Owing to have natural diamond at occurring in nature, its use value is familiar with by people very early, and has obtained using more widely.By contrast, owing to there is not natural cubic boron nitride, achieve success up to eighties of last century the fifties synthetic cubic boron nitride, people just recognize the excellent properties of this material, and it is applied to cutting, grinding and precision optical machinery processing and other fields.As for carbon nitride material, its hardness of theory expectation and diamond are suitable even be higher than diamond, therefore have high using value equally.
Just because of the significant application value of recognizing cubic boron nitride, diamond and cube carbon nitride material, people are carrying out unremitting effort always in decades, various synthetic methods have been developed, attempt to realize the preparation low-cost in enormous quantities of these superhard materials, and attempt growth body piece crystalline material.Existing synthetic method comprises: solid-state High Temperature High Pressure synthetic method, low-pressure chemical vapor deposition method, softening method and solvent thermal constant-pressure reaction method or the like.
Solid-state high temperature and high pressure method synthesizing cubic boron nitride and diamond have been obtained very ten-strike, and realized scale production, but it need use high temperature (1200～2000 ℃) and high pressure (3～200,000 normal atmosphere) extreme condition, thereby equipment has been proposed very harsh requirement.The direct result that this phenomenon causes is that input-output ratio is too high, and product price is difficult to reduce, and has limited cubic boron nitride and adamantine application, and this method can't grow body piece crystal big.
The condition that low-pressure chemical vapor deposition method uses is gentle relatively, and it does not need condition of high voltage, and can direct growth go out cubic boron nitride, carbonitride and diamond thin.But this method need be used large-scale vacuum equipment, and can only the growing film material, and used source material and substrate material are also had comparatively strict requirement.Have, this method can't be used for preparing powder body material and body piece crystalline material equally again.
In order to overcome above-mentioned difficulties, the investigation of materials worker has been developed again and has been comprised hydrothermal method diamond synthesis, the nanocrystalline multiple softening synthetic method of solvent thermal process synthesizing cubic boron nitride, has synthesized diamond and cubic boron nitride under gentle relatively condition.But there is more shortcoming equally in these methods: building-up process is to carry out in an airtight high pressure vessel, in case reaction raw materials and proportioning thereof are decided, then the temperature and pressure of system is just interrelated according to a fixed relation.Like this, we may intervene the reaction process in the sealed vessel hardly except control reaction temperature with the time again, also just are difficult to be familiar with at short notice reaction process, rapid Optimum synthesis condition.In light of this situation, the present inventor had once been developed the in-situ synthetic method mutually that selects under hydro-thermal and the solvent thermal condition, has realized controlling artificially as required the beginning and the termination of reaction process, and can regulate and control speed of response in quite on a large scale.Utilize the thing phase purity and the crystalline quality of the cubic boron nitride of this method preparation all to be significantly improved.However, the reaction process that takes place in the temperature and pressure decline process after this method is finished for the control reaction but seems powerless.This situation usually causes that multiple thing mixes mutually in the product, and use value is also had a greatly reduced quality thereupon.
In the existing method of systems analysis with as a result on the basis, we find: for the material system of those heterogeneous coexistences, the thing that generates under lower pressure mainly is thermodynamically stable phase mutually, for example hexagonal boron nitride, graphite and graphite mould carbonitride.If these things generate mutually and settle out, again they be transformed into cube meet very difficult.In addition, in the temperature-fall period after hydro-thermal and solvent thermal reaction are finished, the speed that the pressure lowering speed obviously reduces faster than temperature, thing cube might take place and reverses mutually in what generate when high temperature mutually, makes product become multiphase mixture again.In order to solve this difficult problem, we have proposed the solvent thermal constant-pressure reaction method again, by change the temperature and pressure of reaction system relatively independently, changed the relative stability between each thing phase in the boron-carbon-nitrogen material effectively, and controlled the generative process and the crystalline quality of material.This method prepared sizes evenly, the mutually simple boron carbon nitrogen of thing has remarkable advantages when nanocrystalline, and the reaction conditions gentleness, is easy to realize mass preparation.But, this method is owing to an organic solvent make medium, caused the difficulty of following several aspects: the one, organic solvent is relatively poor to the dissolving power of inorganics, causes the reaction system homogeneity desirable not enough, has brought certain secondary face to ring to the homogeneity of final product.The 2nd, organic solvent is easy to charing when temperature is higher, product has been caused certain pollution.The 3rd, under the solvent thermal condition, inorganics dissolves and transports difficulty, is difficult in and grows the boron carbon nitrogen body piece crystal with higher using value in this environment.
Summary of the invention
The present invention is directed to the shortcoming that existing boron-carbon-nitrogen material synthetic method exists, proposed the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material.This method, temperature and pressure that not only can relatively independent ground adjusting hydrothermal reaction system, in reaction process and the direction of controlling the synthetic boron-carbon-nitrogen material of hydro-thermal to a greater extent, and the thing that takes place when temperature and pressure reduces of inhibited reaction process later stage reverses mutually effectively, guarantees that product has high purity.In addition, utilize method of the present invention, can make the adjustable scope of temperature and pressure of reaction system bigger, the material category that can prepare is more.And, since can be as required modulation pressure arbitrarily, when having gas to participate in the reaction process or producing, utilize method of the present invention can also regulate and control speed of response and direction thereof effectively, thus thing phase, granularity and the productive rate of control final product.Method of the present invention is particularly suitable for synthetic nitride crystallite and the body piece crystal with high thing phase purity of high productivity under hydrothermal condition.
The hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material of the present invention may further comprise the steps, and wherein the preparation of boron source liquid, carbon source liquid and nitrogenous source liquid order is not limit:
1. at first use inert protective gas bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment, stand-by.
2. the preparation of boron source liquid and carbon source liquid
In protective atmosphere, boron source or carbon source are dissolved in the deionized water of step 1 gained, content is 0.005～18 mol, obtains the solution or the suspension liquid of boron source or carbon source after stirring fast.
3. the preparation of nitrogenous source liquid
In protective atmosphere, the nitrogenous source with stoichiometric ratio dissolves in the deionized water of step 1 gained while stirring, obtains the solution or the suspension liquid of nitrogenous source.
4. dress still
(1) during diamond synthesis, only above-mentioned carbon source solution or suspension liquid are joined in the autoclave, then add the reductive agent of stoichiometric ratio again.Use shielding gas packaged autoclave behind the bubbling in solution then.
When (2) synthesizing boron nitride, above-mentioned boron source liquid and nitrogenous source liquid are mixed by stoichiometric ratio, in the autoclave of packing into after stirring.With shielding gas bubbling eliminating air wherein in mixing solutions, packaged autoclave then.
When (3) synthesizing carbonitride, above-mentioned carbon source liquid and nitrogenous source liquid are mixed by stoichiometric ratio, in the autoclave of packing into after stirring.With shielding gas bubbling eliminating air wherein in mixing solutions, packaged autoclave then.
5. reaction
To before the autoclave heating, at first apply the pressure of a 20～2000MPa to it, the temperature of then controlling autoclave is heated to 240～1000 ℃ with 0.01～60 ℃/minute speed, reacts 6～480 hours.
6. product aftertreatment
Reaction is at first fallen the water suction filtration after finishing, and uses acetone and hydrochloric acid suction filtration product then successively, to remove by product and impurity wherein, uses deionized water repetitive scrubbing product again, is neutral up to filtrate.Above-mentioned product is heated to 60～200 ℃ of dryings in a vacuum, just can obtain boron carbon nitrogen crystallite or boron carbon nitrogen crystalline material.
In reaction process, the temperature and pressure difference of autoclave, the boron-carbon-nitrogen material that obtains can be quadrature boron nitride, cubic boron nitride, graphite, lonsdaleite, diamond, graphite mould carbonitride, cube carbonitride and β-carbonitride etc.Along with the raising of autoclave temperature and pressure, the boron carbon nitrogen content with cubic structure constantly increases.In addition, for the reaction that has gas to participate in or produce, all right controls reaction speed of the pressure of regulation and control autoclave, thereby the granularity and the crystalline quality of control gained material.
The shielding gas that uses in above-mentioned steps 1 is selected from nitrogen, helium, neon or argon gas.
One or more are chosen in the boron source of using in above-mentioned steps 2 from boric acid, borate, halogen borate, ammonium borate, ammonium biborate, boric anhydride, boride.Carbon source is chosen one or more from sulfide, carbon-silicon compound, amides, nitrile, aldehydes, urea, organic acid and the organic amine of the halogenide of carbon, haloalkane, carbon.
The nitrogenous source that uses in above-mentioned steps 3 is chosen one or more from metal nitride, trinitride, organic amine, hydrazine class, diethyldithiocarbamate, ammonia and ammonium salt, ureas, acid amides, three halo piperazines and paracyanogen and derivative thereof.
The reductive agent that uses in above-mentioned steps 4 (1) is chosen one or more from basic metal and alloy, alkaline-earth metal, aluminium, gallium, indium, silicon and phosphorus.
In above-mentioned steps (5), when the temperature of autoclave was elevated to preset value with the speed of 15～60 ℃/min, what obtain was the very little boron carbon nitrogen crystallite of granularity; When with 0.01～6 ℃/min of slower speed the temperature of autoclave being elevated to preset value, obtaining granularity is that tens of microns are to the above boron carbon nitrogen crystalline material of millimeter.
Method of the present invention is a kind of hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material, compare with existent method, main improvement of the present invention is as follows: first, method of the present invention is used the deionization water as solvent, various reaction raw materials solubleness therein is higher, it is easier that mineral ion transports therein, therefore utilizes this method not only can obtain the better boron-carbon-nitrogen material of thing phase purity, and the boron carbon nitrogen body piece crystalline material that can be used for growing.The second, the stability of deionized water is apparently higher than organic solvent, therefore under high-temperature and high-pressure conditions it can be owing to decomposition pollution products, thereby guarantee the high purity of synthetic boron-carbon-nitrogen material.The 3rd, in the hydrothermal constant pressure reaction process, can regulate and control the temperature and pressure of reaction system relatively independently, make us set corresponding temperature and pressure condition, the optionally synthetic thing phase that needs according to the relative stability of various boron carbon nitrogen thing phases.The 4th, method of the present invention can be synthesized boron-carbon-nitrogen material under higher temperature and pressure, and can prevent that the thing that occurs in the temperature and pressure decline process from reversing mutually after reaction is finished, therefore the thing phase and the crystalline quality of product can be more effectively controlled, and the range of application of this method can be expanded greatly.The 5th, method of the present invention is substituted with the machine solvent with deionized water, can reduce environmental pollution effectively, is easy to reduce preparation cost simultaneously and amplifies preparative-scale, realize low-cost in enormous quantities synthesize of boron-carbon-nitrogen material under relative mild conditions, therefore have important practical significance.At last, method of the present invention is the point of crossing of a plurality of subjects such as chemical reaction thermodynamics, kinetics, high-pressure physics and hydro-thermal be synthetic, and it also has very high reference value to the fundamental research of related discipline.
Hydrothermal constant pressure synthesis method of the present invention can also be used for " orientation " preparation of other 26S Proteasome Structure and Function materials (for example, zirconium white, titanium dioxide etc.) except can be used for preparing the boron-carbon-nitrogen material.Particularly when a plurality of things coexist mutually in the material, utilize method of the present invention can selectively synthesize the thing phase that some has special property; Except the control thing mutually, utilize method of the present invention can also control the speed and the direction of hydro-thermal reaction, growth boron carbon nitrogen body piece crystalline material.
Utilize method of the present invention, can successfully control the thing phase and the crystallisation process of materials such as water thermal synthesis of boron nitride, carbonitride, the boron-carbon-nitrogen material that obtains having the higher crystalline quality; Simultaneously, utilize method of the present invention, regulated and control the speed of hydro-thermal reaction significantly, and can prepare boron carbon nitrogen crystallite and crystalline material as required.These materials all have important application in precision optical machinery processing, national defense industry, oil drilling and exploitation, high temperature high power short wavelength semiconductor photoelectronic device production and our daily life.
The invention will be further elaborated below in conjunction with description of drawings and embodiment.
Description of drawings
The infrared absorpting light spectra of carbonitride of preparation among Fig. 1 embodiment 1 is positioned at 1047 and 1089cm among the figure
-1The absorption peak ownership at place is C-N key, 1405cm
-1Ownership is C=N key, 1629cm
-1Ownership is-the OH key.
Transmission electron microscope (TEM) the microscopic appearance figure of the carbonitride crystal grain of preparation among Fig. 2 embodiment 1.
The selected area electron diffraction figure of the class cube carbonitride crystal grain of preparation among Fig. 3 embodiment 1.
The selected area electron diffraction figure of the β-type carbonitride crystal grain of preparation among Fig. 4 embodiment 1.
Transmission electron microscope (TEM) the microscopic appearance figure of the carbonitride crystal grain of preparation among Fig. 5 embodiment 16.
Graphite mould carbonitride (the g-C of preparation among Fig. 6 embodiment 17
3N
4) the high-resolution electron microscopy figure of crystal grain.
Graphite mould carbonitride (the g-C of preparation among Fig. 7 embodiment 17
3N
4) aerial thermogravimetric (TG) curve, X-coordinate unit be temperature (℃), ordinate zou is weight percent (%).
Graphite mould carbonitride (the g-C of preparation among Fig. 8 embodiment 18
3N
4) X-ray diffraction (XRD) spectrogram, indicate among the figure " ▲ " for the graphite mould carbonitride, indicate cube carbonitride that is of " ■ ".
Embodiment
Embodiment 1: at first feed nitrogen and carry out bubbling in deionized water, to get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under nitrogen protection, take by weighing the sodiumazide (NaN of stoichiometric ratio then
3) and carbon tetrabromide (CBr
4, 1.06 mol) and put into autoclave, seal behind the deionized water of adding 5ml through the deoxygenation processing.Apply the pressure of 164.0MPa on autoclave, the temperature of controlling autoclave again is elevated to 300 ℃ with 0.93 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 6 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 60 in a vacuum and ℃ carry out drying, just can obtain Carbon Nitride Crystal, its infrared absorption spectrum is seen accompanying drawing 1, transmission electron microscope microscopic appearance figure sees accompanying drawing 2, the electron-diffraction diagram of class cube carbonitride crystal grain is seen accompanying drawing 3, and the selected area electron diffraction figure of β-type carbonitride crystal grain sees accompanying drawing 4.
Embodiment 2: as described in embodiment 1, different is that shielding gas is an argon gas, and carbon source is tetracol phenixin (content 0.005 mol); nitrogenous source is a potassium azide, and temperature of reaction is 240 ℃, and pressure is 20MPa; heat-up rate is 1 ℃/minute, and the reaction times is 12 hours.
Embodiment 3: as described in embodiment 1, different is that shielding gas is a neon, and carbon source is bromofom (content 0.05 mol), and nitrogenous source is a barium azide, and temperature of reaction is 350 ℃, and pressure is 60MPa, and heat-up rate is 1.5 ℃/minute, and the reaction times is 15 hours.
Embodiment 4: as described in embodiment 1, different is that shielding gas is a helium, and carbon source is chloroform (content 0.2 mol), and nitrogenous source is a Trimethylamine 99, and temperature of reaction is 400 ℃, and pressure is 200MPa, and heat-up rate is 3 ℃/minute, and the reaction times is 20 hours.
Embodiment 5: as described in embodiment 1, different is that shielding gas is an argon gas, and carbon source is methylene dichloride (content 0.5 mol), and nitrogenous source is a triethylamine, and temperature of reaction is 450 ℃, and pressure is 300MPa, and heat-up rate is 5 ℃/minute, and the reaction times is 36 hours.
Embodiment 6: as described in embodiment 1; different is that shielding gas is an argon gas; carbon source is trichloromelamine (content 1.0 mol); nitrogenous source is tribenzylamine and 5: 1 mixture of ammoniacal liquor mol ratio; temperature of reaction is 500 ℃; pressure is 500MPa, and heat-up rate is 8 ℃/minute, and the reaction times is 60 hours.
Embodiment 7: as described in embodiment 1, different is that nitrogenous source is TERTIARY BUTYL AMINE and 3: 1 mixture of sodiumazide mol ratio, and temperature of reaction is 550 ℃, and pressure is 700MPa, and heat-up rate is 12 ℃/minute, and the reaction times is 72 hours.
Embodiment 8: as described in embodiment 1, different is that nitrogenous source is hydrazine hydrate and 1: 3 mixture of potassium azide mol ratio, and temperature of reaction is 600 ℃, and pressure is 800MPa, and heat-up rate is 15 ℃/minute, and the reaction times is 96 hours.
Embodiment 9: as described in embodiment 1, different is that nitrogenous source is ammoniacal liquor and 5: 1 mixture of barium azide mol ratio, and temperature of reaction is 650 ℃, and pressure is 900MPa, and heat-up rate is 20 ℃/minute, and the reaction times is 120 hours.
Embodiment 10: as described in embodiment 1, different is that nitrogenous source is diethyldithiocarbamate and 2: 3 mixture of potassium azide mol ratio, and temperature of reaction is 700 ℃, and pressure is 1000MPa, and heat-up rate is 25 ℃/minute, and the reaction times is 150 hours.
Embodiment 11: as described in embodiment 1, different is that nitrogenous source is a urea, and temperature of reaction is 750 ℃, and pressure is 1200MPa, and heat-up rate is 30 ℃/minute, and the reaction times is 180 hours.
Embodiment 12: as described in embodiment 1, different is that nitrogenous source is ammonium chloride and 4: 1 mixture of Trimethylamine 99 mol ratio, and temperature of reaction is 800 ℃, and pressure is 1400MPa, and heat-up rate is 35 ℃/minute, and the reaction times is 240 hours.
Embodiment 13: as described in embodiment 1, different is that nitrogenous source is volatile salt and 6: 1 mixture of sodiumazide mol ratio, and temperature of reaction is 850 ℃, and pressure is 1600MPa, and heat-up rate is 40 ℃/minute, and the reaction times is 300 hours.
Embodiment 14: as described in embodiment 1, different is that nitrogenous source is Neutral ammonium fluoride and 1: 1 mixture of sodiumazide mol ratio, and temperature of reaction is 900 ℃, and pressure is 1800MPa, and heat-up rate is 45 ℃/minute, and the reaction times is 360 hours.
Embodiment 15: as described in embodiment 1, different is that nitrogenous source is ethyleneimine and 3: 2 mixture of hydrazine hydrate mol ratio, and temperature of reaction is 950 ℃, and pressure is 2000MPa, and heat-up rate is 60 ℃/minute, and the reaction times is 400 hours.
Embodiment 16: as described in embodiment 1, different is that reaction pressure is 280MPa, and heat-up rate is 1.17 ℃/minute, and the microscopic appearance of gained sample is seen accompanying drawing 5.
Embodiment 17: as described in embodiment 1, different is that temperature of reaction is 350 ℃, and the high-resolution-ration transmission electric-lens of gained sample (HRTEM) photo is seen accompanying drawing 6, and thermogravimetric analysis (TG) curve is seen accompanying drawing 7.
Embodiment 18: as described in embodiment 1, different is that reaction pressure is 180MPa, and the X-ray diffractogram of sample (XRD) is seen accompanying drawing 8.
Embodiment 19: as described in embodiment 1, different is that the carbon source carbon tetrabromide substitutes with trichloromelamine (content 3.0 mol), nitrogenous source is aluminium nitride and 1: 4 mixture of ammoniacal liquor mol ratio, temperature of reaction is 1000 ℃, pressure is 1200MPa, heat-up rate is 10 ℃/minute, and the reaction times is 480 hours.
Embodiment 20: as described in embodiment 1, different is that carbon source is tetracol phenixin (content 9.0 mol), and nitrogenous source is diethyldithiocarbamate and 2: 3 mixture of ammoniacal liquor mol ratio, temperature of reaction is 800 ℃, pressure is 960MPa, and heat-up rate is 1 ℃/minute, and the reaction times is 300 hours.
Embodiment 21: as described in embodiment 1, different is that carbon source is trimeric cyanamide (content 15.0 mol), and nitrogenous source is ammonium chloride and 1: 1 mixture of potassium azide mol ratio, temperature of reaction is 700 ℃, pressure is 1500MPa, and heat-up rate is 1.2 ℃/minute, and the reaction times is 240 hours.
Embodiment 22: at first feed nitrogen bubble in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under nitrogen protection, in autoclave, add the formaldehyde and the ammoniacal liquor of stoichiometric ratio, adding deionized water to the cumulative volume of handling through deoxygenation at last is 8ml.Sealing applies the pressure of 800MPa after the autoclave thereon, and the temperature of controlling autoclave again is elevated to 600 ℃ with 1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 96 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 200 in a vacuum and ℃ carry out drying, just can obtain class cube carbonitride.
Embodiment 23: as described in embodiment 22, different is that shielding gas is an argon gas, and carbon source is a methane amide; nitrogenous source is sodiumazide and 1: 3 mixture of ammoniacal liquor mol ratio, and temperature of reaction is 650 ℃, and pressure is 950MPa; heat-up rate is 2 ℃/minute, and the reaction times is 120 hours.
Embodiment 24: as described in embodiment 22, different is that carbon source is the dithio diethylamide, and nitrogenous source is potassium azide and 3: 2 mixture of hydrazine hydrate mol ratio, temperature of reaction is 700 ℃, pressure is 1000MPa, and heat-up rate is 4 ℃/minute, and the reaction times is 150 hours.
Embodiment 25: as described in embodiment 22, different is that carbon source is a formic acid, and nitrogenous source is magnesium nitride and 3: 2 mixture of ammoniacal liquor mol ratio, and temperature of reaction is 750 ℃, and pressure is 1200MPa, and heat-up rate is 6 ℃/minute, and the reaction times is 180 hours.
Embodiment 26: as described in embodiment 22, different is that carbon source is a dithiocarbonic anhydride, and nitrogenous source is sodiumazide and 1: 4 mixture of ammoniacal liquor mol ratio, and temperature of reaction is 800 ℃, and pressure is 1300MPa, and heat-up rate is 3 ℃/minute, and the reaction times is 210 hours.
Embodiment 27: as described in embodiment 22, different is that carbon source is a urea, and nitrogenous source is sodiumazide and 1: 3 mixture of ammoniacal liquor mol ratio, and temperature of reaction is 850 ℃, and pressure is 1400MPa, and heat-up rate is 5 ℃/minute, and the reaction times is 240 hours.
Embodiment 28: as described in embodiment 22, different is that nitrogenous source is sodiumazide and 1: 3 mixture of diethyldithiocarbamate mol ratio, and temperature of reaction is 900 ℃, and pressure is 1500MPa, and heat-up rate is 8 ℃/minute, and the reaction times is 264 hours.
Embodiment 29: as described in embodiment 22, different is that nitrogenous source is a potassium azide, and temperature of reaction is 950 ℃, and pressure is 1600MPa, and heat-up rate is 10 ℃/minute, and the reaction times is 288 hours.
Embodiment 30: as described in embodiment 22, different is that nitrogenous source is barium azide and 1: 6 mixture of ammonium chloride mol ratio, and temperature of reaction is 1000 ℃, and pressure is 1700MPa, and heat-up rate is 15 ℃/minute, and the reaction times is 312 hours.
Embodiment 31: as described in embodiment 22, different is that nitrogenous source is sodiumazide and 3: 2 mixture of Trimethylamine 99 mol ratio, and temperature of reaction is 960 ℃, and pressure is 1200MPa, and heat-up rate is 30 ℃/minute, and the reaction times is 360 hours.
Embodiment 32: as described in embodiment 22, different is that nitrogenous source is potassium azide and 3: 1 mixture of triethylamine mol ratio, and temperature of reaction is 840 ℃, and pressure is 1650MPa, and heat-up rate is 40 ℃/minute, and the reaction times is 400 hours.
Embodiment 33: at first feed the neon bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under the neon protection, take by weighing an amount of ammonium chloride (NH then
4Cl) put into autoclave, add the acetonitrile (CH of stoichiometric ratio again
3CN) with through deionized water to the cumulative volume that deoxygenation is handled is 8ml, sealing.Apply the pressure of 300MPa on autoclave, the temperature of control autoclave is elevated to 500 ℃ with 0.1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 20 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 180 in a vacuum and ℃ carry out drying, just can obtain the graphite mould carbonitride.
Embodiment 34: as described in embodiment 33, different is that carbon source is the ammonia acetonitrile, and nitrogenous source is sodiumazide and 1: 5 mixture of ammonium chloride mol ratio, and temperature of reaction is 600 ℃, and pressure is 700MPa, and heat-up rate is 2.5 ℃/minute, and the reaction times is 60 hours.
Embodiment 35: as described in embodiment 33, different is that nitrogenous source is potassium azide and 3: 2 mixture of Trimethylamine 99 mol ratio, and temperature of reaction is 700 ℃, and pressure is 950MPa, and heat-up rate is 4 ℃/minute, and the reaction times is 90 hours.
Embodiment 36: as described in embodiment 33, different is that nitrogenous source is potassium azide and 5: 3 mixture of volatile salt mol ratio, and temperature of reaction is 800 ℃, and pressure is 1100MPa, and heat-up rate is 8 ℃/minute, and the reaction times is 132 hours.
Embodiment 37: as described in embodiment 33, different is that nitrogenous source is potassium azide and diethyldithiocarbamate mixture (mol ratio 1: 3), and temperature of reaction is 900 ℃, and pressure is 1350MPa, and heat-up rate is 60 ℃/minute, and the reaction times is 180 hours.
Embodiment 38: as described in embodiment 33, different is that nitrogenous source is hydrazine hydrate and ammonia water mixture (mol ratio 5: 2), and temperature of reaction is 1000 ℃, and pressure is 1500MPa, and heat-up rate is 25 ℃/minute, and the reaction times is 180 hours.
Embodiment 39: at first feed the argon gas bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under argon shield, the boric acid (content 0.005mol/L) and the sodiumazide that take by weighing stoichiometric ratio are put into autoclave then, add the deionized water that 8ml handles through deoxygenation again, sealing.Apply the pressure of 20MPa on autoclave, the temperature of controlling autoclave again is elevated to 280 ℃ with 0.5 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 12 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 70 in a vacuum and ℃ carry out drying, just can obtain the boron nitride crystallite.
Embodiment 40: as described in embodiment 39, different is that the boron source is Sodium Tetraborate (content 0.01mol/L), and nitrogenous source is a barium azide, and temperature of reaction is 320 ℃, and pressure is 60MPa, and heat-up rate is 1 ℃/minute, and the reaction times is 25 hours.
Embodiment 41: as described in embodiment 39, different is that the boron source is potassium borate (content 0.1mol/L), and nitrogenous source is a potassium azide, and temperature of reaction is 380 ℃, and pressure is 90MPa, and heat-up rate is 2 ℃/minute, and the reaction times is 36 hours.
Embodiment 42: as described in embodiment 39, different is that the boron source is ammonium biborate (content 0.6mol/L), and nitrogenous source is sodiumazide and hydrazine hydrate mixture (mol ratio 3: 2), 450 ℃ of temperature of reaction, pressure is 120MPa, and heat-up rate is 4 ℃/minute, and the reaction times is 60 hours.
Embodiment 43: as described in embodiment 39, different is that boron source boric acid concentration is increased to 2.0mol/L, the nitrogenous source sodiumazide substitutes with sodiumazide and ammonia water mixture (mol ratio 3: 5), temperature of reaction is 500 ℃, pressure is 160MPa, heat-up rate is 8 ℃/minute, and the reaction times is 96 hours.
Embodiment 44: as described in embodiment 39, different is that boron source boric acid concentration is increased to 5.0mol/L, the nitrogenous source sodiumazide substitutes with potassium azide and ammonium chloride mixt (mol ratio 2: 1), temperature of reaction is 550 ℃, pressure is 250MPa, heat-up rate is 10 ℃/minute, and the reaction times is 100 hours.
Embodiment 45: as described in embodiment 39, different is that boron source boric acid concentration is increased to 10.0mol/L, the nitrogenous source sodiumazide substitutes with potassium azide and ammonium nitrate mixture (mol ratio 5: 1), 600 ℃ of temperature of reaction, pressure is 650MPa, heat-up rate is 15 ℃/minute, and the reaction times is 150 hours.
Embodiment 46: as described in embodiment 39, different is that boron source boric acid concentration is increased to 12.0mol/L, the nitrogenous source sodiumazide substitutes with sodiumazide and volatile salt mixture (mol ratio 3: 1), temperature of reaction is 650 ℃, pressure is 900MPa, heat-up rate is 20 ℃/minute, and the reaction times is 200 hours.
Embodiment 47: as described in embodiment 39, different is that boron source boric acid concentration is increased to 15.0mol/L, the nitrogenous source sodiumazide substitutes with sodiumazide and hydrazine hydrate mixture (mol ratio 1: 1), 700 ℃ of temperature of reaction, pressure is 1000MPa, heat-up rate is 30 ℃/minute, and the reaction times is 240 hours.
Embodiment 48: as described in embodiment 39, different is that boron source boric acid concentration is increased to 18.0mol/L, and temperature of reaction is 800 ℃, and pressure is 1500MPa, and heat-up rate is 45 ℃/minute, and the reaction times is 300 hours.
Embodiment 49: at first feed the neon bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under the neon protection, the Sodium tetrafluoroborate (content 2.5mol/L) and the sodiumazide that take by weighing stoichiometric ratio are put into autoclave then, add the deionized water that 8ml handles through deoxygenation again, sealing.Apply the pressure of 125MPa on autoclave, the temperature of control autoclave is elevated to 500 ℃ with 1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 24 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 150 in a vacuum and ℃ carry out drying, just can obtain boron nitride crystallite sample.
Embodiment 50: as described in embodiment 49, different is that the boron source is potassium fluoborate (content 4.0mol/L), and nitrogenous source is a potassium azide, and temperature of reaction is 550 ℃, and pressure is 180MPa, and heat-up rate is 3 ℃/minute, and the reaction times is 36 hours.
Embodiment 51: as described in embodiment 49, different is that the boron source is ammonium borofluoride (content 6.5mol/L), and nitrogenous source is a barium azide, and temperature of reaction is 600 ℃, and pressure is 250MPa, and heat-up rate is 5 ℃/minute, and the reaction times is 48 hours.
Embodiment 52: as described in embodiment 49, different is that boron source Sodium tetrafluoroborate concentration is increased to 8.0mol/L, and nitrogenous source is sodiumazide and ammonia water mixture (mol ratio 3: 5), temperature of reaction is 650 ℃, pressure is 450MPa, and heat-up rate is 8 ℃/minute, and the reaction times is 90 hours.
Embodiment 53: as described in embodiment 49, different is that boron source Sodium tetrafluoroborate concentration is increased to 10.0mol/L, the nitrogenous source sodiumazide substitutes with potassium azide and hydrazine hydrate mixture (mol ratio 5: 2), temperature of reaction is 700 ℃, pressure is 750MPa, heat-up rate is 12 ℃/minute, and the reaction times is 100 hours.
Embodiment 54: as described in embodiment 49, different is that boron source Sodium tetrafluoroborate concentration is increased to 12.0mol/L, the nitrogenous source sodiumazide substitutes with potassium azide and ammonium chloride mixt (mol ratio 4: 3), temperature of reaction is 750 ℃, pressure is 800MPa, heat-up rate is 14 ℃/minute, and the reaction times is 120 hours.
Embodiment 55: as described in embodiment 49, different is that boron source Sodium tetrafluoroborate concentration is increased to 14.0mol/L, the nitrogenous source sodiumazide substitutes with ammoniacal liquor and hydrazine hydrate mixture (mol ratio 5: 2), 800 ℃ of temperature of reaction, pressure is 1000MPa, heat-up rate is 20 ℃/minute, and the reaction times is 160 hours.
Embodiment 56: at first feed nitrogen bubble in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under nitrogen protection, the boric anhydride, urea and the ammoniacal liquor that take by weighing stoichiometric ratio are put into autoclave then, add the deionized water that 8ml handles through deoxygenation again, sealing.Apply the pressure of 350MPa on autoclave, the temperature of control autoclave is elevated to 550 ℃ with 1.5 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 72 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 120 in a vacuum and ℃ carry out drying, just can obtain the boron nitride crystallite.
Embodiment 57: as described in embodiment 56, different is that the boron source is a Sodium Tetraborate, and temperature of reaction is 650 ℃, and pressure is 950MPa, and heat-up rate is 10 ℃/minute, and the reaction times is 144 hours.
Embodiment 58: as described in embodiment 56, different is that the boron source is a boric acid, and temperature of reaction is 700 ℃, and pressure is 1250MPa, and heat-up rate is 15 ℃/minute, and the reaction times is 192 hours.
Embodiment 59: as described in embodiment 56, different is that the boron source is a Sodium tetrafluoroborate, and nitrogenous source is a urea oxalate, and temperature of reaction is 750 ℃, and pressure is 1550MPa, and heat-up rate is 25 ℃/minute, and the reaction times is 240 hours.
Embodiment 60: as described in embodiment 56, different is that the boron source is an ammonium borofluoride, and nitrogenous source is urea and ammonia water mixture (mol ratio 1: 3), and temperature of reaction is 900 ℃, and pressure is 1750MPa, and heat-up rate is 40 ℃/minute, and the reaction times is 288 hours.So just can prepare the cubic boron nitride crystal material.
Embodiment 61: at first feed nitrogen bubble in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under nitrogen protection, the ammonium borofluoride (content 0.8mol/L), carbon tetrabromide (content 2mol/L) and the sodiumazide that take by weighing stoichiometric ratio are put into autoclave then, add the deionized water that 8ml handles through deoxygenation again, sealing.Apply the pressure of 60MPa on autoclave, the temperature of control autoclave is elevated to 300 ℃ with 1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 18 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, be neutral with deionized water repetitive scrubbing product up to filtrate again.Slowly heat product to 80 in a vacuum and ℃ carry out drying, just can obtain boron carbon nitrogen crystallite.
Embodiment 62: as described in embodiment 61, the concentration of different is boron source ammonium borofluoride is brought up to 2mol/L, and the concentration of carbon source carbon tetrabromide is brought up to 4mol/L.
Embodiment 63: as described in embodiment 61, the concentration of different is boron source ammonium borofluoride is brought up to 6mol/L, and the concentration of carbon source carbon tetrabromide is brought up to 10mol/L, and pressure is 200MPa, and temperature of reaction is 350 ℃, and the reaction times is for being increased to 60 hours.
Embodiment 64: as described in embodiment 61, different is that the boron source is a Sodium tetrafluoroborate, and carbon source is a tetracol phenixin, and nitrogenous source is a potassium azide, and pressure is 400MPa, and temperature of reaction is 400 ℃, and the reaction times is 144 hours.
Embodiment 65: as described in embodiment 61, different is that the boron source is a potassium fluoborate, and carbon source is that bromofom substitutes, and nitrogenous source is a barium azide, and pressure is 600MPa, 450 ℃ of temperature of reaction, and the reaction times is 192 hours.
Embodiment 66: as described in embodiment 61, different is that the boron source is a boric acid, and carbon source is a chloroform, and nitrogenous source is a hydrazine hydrate, and pressure is 800MPa, and temperature of reaction is 500 ℃, and the reaction times is 240 hours.
Embodiment 67: as described in embodiment 61, different is that the boron source is a potassium fluoborate, and carbon source is a methylene dichloride, and nitrogenous source is an ammonium chloride, and pressure is 1000MPa, and temperature of reaction is 600 ℃, and the reaction times is 276 hours.
Embodiment 68: as described in embodiment 61, different is that the boron source is a Sodium Tetraborate, and carbon source is a dithiocarbonic anhydride, and nitrogenous source is an ammoniacal liquor, and pressure is 1200MPa, and temperature of reaction is 650 ℃, and the reaction times is 320 hours.
Embodiment 69: as described in embodiment 61, different is that the boron source is an ammonium biborate, and carbon source is a rubeanic acid, and nitrogenous source is a Trimethylamine 99, and pressure is 1400MPa, and temperature of reaction is 700 ℃, and the reaction times is 360 hours.
Embodiment 70: as described in embodiment 61, different is that the boron source is a silicon boride, and carbon source is an acetonitrile, and nitrogenous source is a triethylamine, and pressure is 1600MPa, and temperature of reaction is 750 ℃, and the reaction times is 400 hours.
Embodiment 71: as described in embodiment 61, different is that the boron source is a silicon boride, and nitrogenous source is ammonium chloride and ammonia water mixture (mol ratio 1: 4), and pressure is 1700MPa, and temperature of reaction is 800 ℃, and the reaction times is 432 hours.
Embodiment 72: at first feed nitrogen bubble in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under nitrogen protection, take by weighing the potassium fluoborate (content 1.5mol/L) and 2,4 of stoichiometric ratio then; 6-three chloro-1,3,5-triazines (content 3mol/L) are put into autoclave; the ammoniacal liquor that adds stoichiometric ratio again, adding deionized water to the cumulative volume of handling through deoxygenation at last is 8ml, sealing.Apply the pressure of 160MPa on autoclave, the temperature of control autoclave is elevated to 540 ℃ with 2 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 36 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 120 in a vacuum and ℃ carry out drying, just can obtain boron carbon nitrogen crystallite.
Embodiment 73: as described in embodiment 72, different is that the boron source is Sodium tetrafluoroborate (content 4mol/L), and carbon source is formaldehyde (content 8mol/L), and pressure is 200MPa, and temperature of reaction is 600 ℃, and the reaction times is 60 hours.
Embodiment 74: as described in embodiment 72, different is that the boron source is Sodium tetrafluoroborate (content 6mol/L), and carbon source is dimethylamine (content 12mol/L), and pressure is 600MPa, and temperature of reaction is 700 ℃, and the reaction times is 84 hours.
Embodiment 75: as described in embodiment 72, different is that carbon source is a melamine, and pressure is 800MPa, and temperature of reaction is 300 ℃, and the reaction times is 24 hours.
Embodiment 76: as described in embodiment 72, different is that the boron source is a potassium borate, content 3mol/L, and carbon source is a formic acid, and content 0.5mol/L, pressure are 1000MPa, and temperature of reaction is 850 ℃, and the reaction times is 6 hours.
Embodiment 77: as described in embodiment 72, different is that carbon source is a tetracol phenixin, and nitrogenous source is that TERTIARY BUTYL AMINE substitutes.
Embodiment 78: as described in embodiment 72, different is that carbon source is an acetonitrile, and nitrogenous source is hydrazine hydrate and Trimethylamine 99 mixture, mol ratio 5: 2.
Embodiment 79: as described in embodiment 72, different is that carbon source is a formaldehyde, and nitrogenous source is an ethyleneimine.
Embodiment 80: as described in embodiment 72, different is that carbon source is a dithiocarbonic anhydride, and nitrogenous source is ammoniacal liquor and 3: 1 mixture of urea mol ratio.
Embodiment 81: as described in embodiment 72, different is that nitrogenous source is a diethyldithiocarbamate.
Embodiment 82: as described in embodiment 72, different is that nitrogenous source is ammoniacal liquor and 5: 3 mixture of tribenzylamine mol ratio.
Embodiment 83: at first feed the argon gas bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under argon shield, the dithiocarbonic anhydride and the zinc powder that take by weighing stoichiometric ratio are put into autoclave then, and adding deionized water to the volume of handling through deoxygenation at last is 8ml, sealing.Apply the pressure of 1000MPa on autoclave, the temperature of control autoclave is elevated to 750 ℃ with 1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 80 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 150 in a vacuum and ℃ carry out drying, just can obtain diamond crystallites.
Embodiment 84: as described in embodiment 83, different is that carbon source is the dithiocarbonic anhydride solution (concentration 1.5mol/L) of carbon tetrabromide, and reductive agent is the magnesium powder, and pressure is 1500MPa, and temperature of reaction is 850 ℃, and the reaction times is 120 hours.
Embodiment 85: as described in embodiment 83, different is that carbon source is a tetracol phenixin, and reductive agent is a silica flour, and pressure is 1800MPa, and temperature of reaction is 950 ℃, and the reaction times is 180 hours.
Embodiment 86: at first feed the argon gas bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Then, anhydrous hexane, tetrahydrofuran (THF) and glycol dimethyl ether are used sodium Metal 99.5 and benzophenone drying respectively, standby after in argon atmospher, distilling.Under argon shield, 100 milliliters of tetrahydrofuran (THF)s that the super-dry of learning from else's experience is handled and 5 milliliters of anhydrous dimethyl oxygen base ethane and 1.2 gram Na-K alloies are put into beaker, sonic oscillation after 5 minutes blue milk sap.In argon atmospher, get 3.2 gram bromofoms and be dissolved in 20 milliliters of tetrahydrofuran (THF)s, after fully refluxing 40 minutes, sonic oscillation limit, limit dropwise joins in the above-mentioned sodium potassium milk sap with the speed of 0.06 ml/min, refluxes 20 minutes; Naturally cooling adds the deionized water of handling through deoxygenation and removes unreacted Na-K alloy, suction filtration, evaporated under reduced pressure filtrate, residual solid is dissolved with methylene dichloride, again suction filtration, after slowly dripping the hexane that dewaters through deoxygenation in the filtrate, centrifugation gets brown ceramic powder, and is standby after the vacuum-drying.
After taking by weighing the above-mentioned brown ceramic powder and zinc powder adding autoclave of stoichiometric ratio, add the deionized water that 8ml handles through deoxygenation again, sealing.Apply the pressure of 1500MPa on autoclave, the temperature of control autoclave is elevated to 700 ℃ with 1 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 96 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 100 in a vacuum and ℃ carry out drying, just can obtain diamond crystallites.
Embodiment 87: as described in embodiment 86, different is that carbon source is a chloroform, and reductive agent is the magnesium powder, and pressure is 1600MPa, and temperature of reaction is 750 ℃, and the reaction times is 120 hours.
Embodiment 88: as described in embodiment 86, different is that carbon source is a methylene dichloride, and reductive agent is the gallium powder, and pressure is 1700MPa, and temperature of reaction is 850 ℃, and the reaction times is 150 hours.
Embodiment 89: as described in embodiment 86, different is that carbon source is a carbon tetrabromide, and reductive agent is a white phosphorus, and pressure is 1800MPa, and temperature of reaction is 900 ℃, and the reaction times is 200 hours.
Embodiment 90: as described in embodiment 86, different is that carbon source is a tetracol phenixin, and reductive agent is the indium powder, and pressure is 1900MPa, and temperature of reaction is 1000 ℃, and the reaction times is 240 hours.
Embodiment 91: as described in embodiment 86, different is that reductive agent is the magnesium powder, and pressure is 1750MPa, and the reaction times is 360 hours.
Embodiment 92: as described in embodiment 86, different is that reductive agent is an aluminium powder, and pressure is 1900MPa, and temperature of reaction is 900 ℃, and the reaction times is 400 hours.
Embodiment 93: as described in embodiment 86, different is that reductive agent is a white phosphorus, and pressure is 2000MPa, and temperature of reaction is 1000 ℃, and the reaction times is 480 hours.Under this condition, just can prepare the diamond crystal material.
Embodiment 94: at first feed the helium bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment.Under the helium protection, the silicon carbide that takes by weighing stoichiometric ratio is put into autoclave, adds the tetracol phenixin and the formic acid of stoichiometric ratio more then, and adding deionized water to the cumulative volume of handling through deoxygenation at last is 8ml, sealing.Apply the pressure of 1400MPa on autoclave, the temperature of control autoclave is elevated to 600 ℃ with 0.5 ℃/minute speed, and the constant temperature and pressure reaction naturally cooled to room temperature after 20 hours.
After reaction finishes, clean the deionized water suction filtration, use acetone and dilute hydrochloric acid washed product then successively, remove wherein organic by-products and other impurity, use deionized water repetitive scrubbing product again, be neutral up to filtrate.Slowly heat product to 160 in a vacuum and ℃ carry out drying, just can obtain diamond crystallites.
Embodiment 95: as described in embodiment 94, different is that tetracol phenixin substitutes with chloroform, and formic acid substitutes with acetate, and pressure is 1200MPa, and temperature of reaction is 700 ℃, and heat-up rate is 1 ℃/minute, and the reaction times is 50 hours.
Embodiment 96: as described in embodiment 94, different is that tetracol phenixin substitutes with methylene dichloride, and formic acid substitutes with oxalic acid, and pressure is 1500MPa, and temperature of reaction is 800 ℃, and heat-up rate is 2 ℃/minute, and the reaction times is 80 hours.
Embodiment 97: as described in embodiment 94, different is that reaction pressure is 1800MPa, and temperature of reaction is 900 ℃, and the reaction times is 120 hours.
Embodiment 98: as described in embodiment 94, that different is reaction pressure 1900MPa, and temperature of reaction is 950 ℃, and the reaction times is 240 hours.
Claims (7)
1. the hydrothermal constant pressure synthesis method of a controlled preparation boron-carbon-nitrogen material may further comprise the steps, and wherein the preparation of boron source liquid, carbon source liquid and nitrogenous source liquid order is not limit:
(1) at first uses inert protective gas bubbling in deionized water, get rid of wherein dissolved oxygen, then with the deionized water vapor enrichment;
(2) preparation of boron source liquid and carbon source liquid
In protective atmosphere, boron source or carbon source are dissolved in the above-mentioned deionized water, content is 0.005～18 mol, obtains the solution or the suspension liquid of boron source or carbon source after stirring fast;
(3) preparation of nitrogenous source liquid
In protective atmosphere, the nitrogenous source with stoichiometric ratio dissolves in the above-mentioned deionized water while stirring, obtains the solution or the suspension liquid of nitrogenous source;
(4) dress still
1. during diamond synthesis, only above-mentioned carbon source solution or suspension liquid are joined in the autoclave, then add the reductive agent of stoichiometric ratio again, use shielding gas packaged autoclave behind the bubbling in solution then;
When 2. synthesizing boron nitride, above-mentioned boron source liquid and nitrogenous source liquid are mixed by stoichiometric ratio, in the autoclave of packing into after stirring,, packaged autoclave then with shielding gas bubbling eliminating air wherein in mixing solutions;
When 3. synthesizing carbonitride, above-mentioned carbon source liquid and nitrogenous source liquid are mixed by stoichiometric ratio, in the autoclave of packing into after stirring,, packaged autoclave again with shielding gas bubbling eliminating air wherein in mixing solutions;
(5) reaction
To before the autoclave heating, at first apply the pressure of a 20～2000MPa to it, the temperature of then controlling autoclave is heated to 240～1000 ℃ with 0.01～60 ℃/minute speed, reacts 6～480 hours;
(6) product aftertreatment
After reaction finishes, at first the water suction filtration is fallen, use acetone and hydrochloric acid suction filtration product then successively, remove wherein by product and impurity, be neutral with deionized water repetitive scrubbing product to filtrate again, products therefrom is heated to 60～200 ℃ of dryings in a vacuum, just can obtain boron carbon nitrogen crystallite or boron carbon nitrogen crystalline material.
2. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1 is characterized in that, the shielding gas that uses in step (1) is selected from nitrogen, helium, neon or argon gas.
3. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1, it is characterized in that one or more are chosen in the boron source of using from boric acid, borate, halogen borate, ammonium borate, ammonium biborate, boric anhydride, boride in step (2).
4. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1, it is characterized in that used carbon source is selected from sulfide, carbon-silicon compound, amides, nitrile, aldehydes, urea, organic acid and the organic amine of haloalkane, carbon of halogenide, the carbon of carbon and chooses one or more in step (2).
5. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1, it is characterized in that the nitrogenous source that uses in the step (3) is chosen one or more from metal nitride, trinitride, organic amine, hydrazine class, diethyldithiocarbamate, ammonia and ammonium salt, ureas, acid amides, three halo piperazines and paracyanogen and derivative thereof.
6. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1, it is characterized in that the reductive agent that uses in 1. in step (4) is selected from one or more in basic metal and alloy, alkaline-earth metal, zinc, aluminium, gallium, indium, silicon and the phosphorus.
7. the hydrothermal constant pressure synthesis method of controlled preparation boron-carbon-nitrogen material as claimed in claim 1 is characterized in that, in step (5), when the temperature of autoclave is elevated to preset value with the speed of 15～60 ℃/min, obtains boron carbon nitrogen crystallite; When with 0.01～6 ℃/min of slower speed the temperature of autoclave being elevated to preset value, obtaining granularity is that tens of microns are to the above boron carbon nitrogen crystalline material of millimeter.
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| CN105692572A (en) * | 2016-03-11 | 2016-06-22 | 大连理工大学 | Method for synthesizing g-C3N4 nanomaterials with various shapes |
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| CN113441088A (en) * | 2021-08-18 | 2021-09-28 | 张相法 | Cubic boron nitride-diamond polycrystalline sintered body and manufacturing process thereof |
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Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60180908A (en) * | 1984-02-27 | 1985-09-14 | Shigeo Nishida | Manufacture of artificial diamond |
| SU1490869A1 (en) * | 1987-09-30 | 1991-04-23 | Институт элементоорганических соединений им.А.Н.Несмеянова | Method of producing diamond powders |
| CN1066417C (en) * | 1997-11-05 | 2001-05-30 | 中国科学技术大学 | Thermal reduction process of metal solvent to synthesize diamond and other material with similar structure |
| JP4288457B2 (en) * | 2002-07-25 | 2009-07-01 | 白石工業株式会社 | Microcrystalline diamond, polycrystalline diamond and method for producing them |
| AU2002368368A1 (en) * | 2002-11-15 | 2004-06-15 | University Of Science And Technology Of China | Process for producing diamond, graphite or mixture of diamond and graphite |
| CN1329290C (en) * | 2004-09-01 | 2007-08-01 | 山东大学 | Phase selection in-situ synthesis method used for controlling boron nitride object phase |
-
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| CN105692572A (en) * | 2016-03-11 | 2016-06-22 | 大连理工大学 | Method for synthesizing g-C3N4 nanomaterials with various shapes |
| CN105776201A (en) * | 2016-04-07 | 2016-07-20 | 东南大学 | Method for low-temperature and low-pressure nano-diamond synthesis by using oxidized graphene powder |
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| CN113441088A (en) * | 2021-08-18 | 2021-09-28 | 张相法 | Cubic boron nitride-diamond polycrystalline sintered body and manufacturing process thereof |
| CN113441088B (en) * | 2021-08-18 | 2023-04-11 | 张相法 | Cubic boron nitride-diamond polycrystalline sintered body and manufacturing process thereof |
| CN116282039A (en) * | 2022-12-19 | 2023-06-23 | 石河子大学 | Method for removing boron impurities in trichlorosilane |
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