CN1801513A - Method for preparing catalysis electrode for silicon based minisize direct carbinol fuel cell - Google Patents

Method for preparing catalysis electrode for silicon based minisize direct carbinol fuel cell Download PDF

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Publication number
CN1801513A
CN1801513A CNA2005100103367A CN200510010336A CN1801513A CN 1801513 A CN1801513 A CN 1801513A CN A2005100103367 A CNA2005100103367 A CN A2005100103367A CN 200510010336 A CN200510010336 A CN 200510010336A CN 1801513 A CN1801513 A CN 1801513A
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layer
fuel cell
silicon
platinum
preparation
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CN100369304C (en
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刘晓为
索春光
张宇峰
王蔚
田丽
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Harbin Institute of Technology
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Harbin Institute of Technology
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/50Fuel cells

Abstract

The invention provides a preparation method for catalysis electrode for silicon-base micro direct methanol fuel battery. Wherein, with silicon slice of flow-field figure as carrier for catalysis layer, forming porous silicon layer on carrier, depositing a Ti layer with physical evaporation; obtaining opposite catalysis layer on two electrodes with chemical plating metal method. This invention can reduce battery size and consumption of noble metal effectively, and improves catalytic activity.

Description

The preparation method of catalysis electrode for silicon based minisize direct carbinol fuel cell
(1) technical field
That the present invention relates to is a kind of catalysis electrode for silicon based minisize direct carbinol fuel cell preparation method, is exactly a kind of method that adopts method that physical vapour deposition (PVD) combines with chemical plating depositing noble metal or precious metal alloys on porous silicon layer to obtain Catalytic Layer specifically.
(2) background technology
Early 1990s has proposed the notion of micro cell.Reported that U.S. a company developed micro fuel cell in 2003.This battery can be used in the products such as mobile phone, notebook computer.The NEC of Japan also has relevant report with Toshiba.Direct methanol fuel cell has higher specific energy and energy conversion efficiency as a kind of minitype portable energy.
Yet the catalyst of direct methanol fuel cell adopts the method for spraying to be sprayed onto on the proton exchange membrane mostly at present, adopt the method for hot pressing to prepare membrane electrode (MEA) again, noble metal catalyst forms carbon supported catalyst by the codeposition with activated carbon powder in this method, if want to improve the carrying capacity of active catalyst like this, thereby the thickness that certainly will will increase membrane electrode is cost with the proton conductivity that reduces film, and prepares membrane electrode exists noble metal catalyst in spraying catalyst process serious waste phenomenon in this way.
There is research to adopt method depositing noble metal catalyst on the silicon chip pole plate of physical sputtering for micro direct methanol fuel battery, the method of this simple employing physical deposition, the adhesion that makes catalyst and silicon base material is not very good, and exists a large amount of noble metal wasting phenomenons yet and be unfavorable for large batch of processing in sputter procedure.
(3) summary of the invention
The purpose of this invention is to provide a kind of batch machining of being convenient to, the preparation method of the catalysis electrode for silicon based minisize direct carbinol fuel cell of dependable performance.
The object of the present invention is achieved like this: with the silicon chip that processes the flow field figure carrier as Catalytic Layer, at first on the carrier silicon chip, form porous silicon layer, adopt the method for physical evaporation on porous silicon layer, to deposit the layer of metal titanium layer then, adopt the method for chemically plating platinum and chemically plating platinum-ruthenium alloy obtaining corresponding Catalytic Layer on the minus plate He on the positive plate respectively at last.
The present invention can also comprise some features like this:
1, describedly forming porous silicon layer on the carrier silicon chip, is to adopt volume ratio to consist of HF: C 2H 5OH=1: 1 electrolyte system, silicon chip be as anode, and platinized platinum is as negative electrode, current density 10mA/cm 2Corrosion is 30 minutes under the condition.
2, adopting the thickness of physical evaporation method deposition layer of metal titanium layer on the described porous silicon layer is 200nm.
3, the pre-treatment of chemical plating comprises: alligatoring, sensitization, activation and reducing process.
4, minus plate adopts chemically plating platinum to obtain Catalytic Layer.
5, positive plate adopts chemically plating platinum-ruthenium alloy method to obtain Catalytic Layer.
There are some researches show that the noble metal catalyst that plating adopted or chemical plating obtain has more excellent catalytic activity, the Catalytic Layer that chemical plating obtains and the adhesion of substrate obviously are better than adopting the metal catalytic layer of physical evaporation or sputtering method preparation, all can reach more than 95% for the noble metal utilance in chemically plating platinum or the platinum-ruthenium alloy plating bath, can significantly reduce the wasting phenomenon of noble metal.Integrate, the invention has the advantages that following some:
1, is convenient to batch machining, can reduces manufacturing cost;
2, the adhesion excellence of coating and matrix;
3, the catalytic activity height of catalysis electrode;
4, the utilance height of noble metal helps reducing noble metal consumption.
(4) description of drawings
Fig. 1 is a preparation THE EXPERIMENT OF POROUS SILICON device;
Fig. 2 is the sem photograph of chemically plating platinum-ruthenium alloy catalysis electrode.
(5) specific embodiments
1, the cleaning of silicon chip: adopting resistivity is P type or N type<100 of 0.012~0.013 Ω cm〉silicon chip, carry out ultrasonic cleaning with toluene, acetone and ethanol respectively;
2, the oxidation of silicon chip: the silicon chip after the cleaning places oxidation furnace, the controlled oxidation furnace temperature is at 1180 ℃, at bath temperature is 95~97 ℃, and oxygen flow is that aerating oxygen carries out oxidation under the condition of 1l/min, generates thickness and be 1.0~1.5 microns silicon dioxide layer;
3, photoetching: on silicon chip, adopt photoetching technique to form the flow field figure;
4, etching: but adopt wet etching technology silicon chip to form the flow field, wherein the weight ratio concentration of KOH etchant solution is between 30%-40%, and corrosion depth is at 150 μ m~240 μ m;
5, form porous silicon layer: silicon anode electrochemical caustic solution is adopted in the preparation of porous silicon, device double flute system as shown in Figure 1, loading electrolyte 2 in the PTFE groove 1, platinum electrode 3 and silicon chip 4, and adopting the advantage of double flute corrosion is to avoid the problem of silicon chip back face metalization.Electrolyte system consists of HF: C 2H 5OH=1: 1 (volume ratio), silicon chip be as anode, and platinized platinum is as negative electrode, current density 10mA/cm 2Corrosion obtained porous silicon layer in 30 minutes under the condition;
6, evaporation titanium layer: adopt physical evaporation method deposition layer of metal titanium layer on porous silicon, thickness is 200nm;
7, chemically plating platinum or chemically plating platinum-ruthenium alloy pre-treating technology condition:
(1) alligatoring: the purpose of alligatoring is to make matrix surface be micro-rough, increases the contact area of coating and matrix, thereby increases the adhesion of coating and matrix.Method is for adopting 200 #~400 #Fine sandpaper polishing surface dries up after cleaning;
(2) sensitization: it is the silicon base after the alligatoring to be put into the solution that contains sensitizer flood that sensitization is handled, make the material of the easy oxidation of silicon chip surface absorption one deck, when activation processing subsequently, these materials are reduced activator and form the catalysis nucleus, stay product surface, later chemical plating can be carried out on this surface, thereby shortens the induction period of chemical plating.Sensitizing solution composition and process conditions are as follows:
Stannous chloride 10~50g/L
Hydrochloric acid 30~50ml/L
The tin grain is an amount of
Room temperature 3~5 minutes
(3) activation: activation processing is that the silicon chip after sensitization is handled immerses in the solution of the precious metal chemical complex that contains catalytic activity and handles, makes silicon chip surface generate the layer of precious metal that one deck has catalytic activity, as chemical plating redox reaction catalyst.Activating solution composition and process conditions are as follows:
Palladium bichloride 0.25~0.5g/L
Hydrochloric acid 20~35ml/L
15~25 1~5 minute
(4) reduction: the silicon chip after the ionic activating solution is handled and cleaned must reduce processing, purpose is in order to prevent that the remaining activator of silicon chip surface from bringing subsequent processing-chemically plating platinum or chemically plating platinum-ruthenium alloy solution into, causes the pollution of chemical plating fluid and decomposes in advance.Can also improve simultaneously the catalytic activity of silicon chip surface, accelerate chemical deposition speed.Reduction Treatment Solution composition and process conditions are as follows:
Sodium hypophosphite 10~30g/L
Room temperature 0.5~2 minute
8, the preparation of cathode catalysis electrode: the minus plate through pre-treatment can carry out surperficial platinum plating so that obtain the metal platinum catalyst layer on the porous silicon layer;
Chemically plating platinum solution composition and process conditions such as following table 1:
Table 1 chemically plating platinum solution and process conditions
Technological specification Parameter
Pt(NH 3) 2(NO 2) 2/g·L -1 2~4
NH 4OH 28%/ml·L -1 200~300
Add platinum salt earlier and add following reducing agent again
Solid NH 2OH·HCl/g·L -1 25~50
80% hydrazine/mlL -1 8~25
pH 11±1.0
Temperature/℃ 40~50
Time/min 5~30
9, the preparation of anode-catalyzed electrode: the positive plate through pre-treatment can carry out surface chemistry platinum plating-ruthenium alloy, so that obtain platinum-ruthenium alloy catalysts layer on the porous silicon layer.The sem test of coating as shown in Figure 2, the catalyst particle size in the coating is little and be evenly distributed as can be seen;
Chemically plating platinum-ruthenium alloy solution composition and process conditions such as following table 2:
Table 2 chemically plating platinum-ruthenium alloy solution and process conditions
Technological specification Parameter
Pt(NH 3) 2(NO 2) 2/g·L -1 2~4
RuCl 3·3H 2O/g·L -1 2~6
NaNO 2/g·L -1 5~10
NH 4OH 28%/ml·L -1 240~340
Solid NH 2OH·HCl/g·L -1 30~60
80% hydrazine/mlL -1 10~40
pH 11±1.0
Temperature/℃ 40~50
Time/min 5~30
10, the assembling of battery: each battery component that will prepare is assembled into silicon based minisize direct carbinol fuel cell.

Claims (5)

1, a kind of preparation method of catalysis electrode for silicon based minisize direct carbinol fuel cell, it is characterized in that: with the silicon chip that processes the flow field figure carrier as Catalytic Layer, at first on the carrier silicon chip, form porous silicon layer, adopt the method for physical evaporation on porous silicon layer, to deposit the layer of metal titanium layer then, adopt the method for chemically plating platinum and chemically plating platinum-ruthenium alloy obtaining corresponding Catalytic Layer on the minus plate He on the positive plate respectively at last.
2, the preparation method of catalysis electrode for silicon based minisize direct carbinol fuel cell according to claim 1 is characterized in that: describedly forming porous silicon layer on the carrier silicon chip, is to adopt volume ratio to consist of HF: C 2H 5OH=1: 1 electrolyte system, silicon chip be as anode, and platinized platinum is as negative electrode, current density 10mA/cm 2Corrosion is 30 minutes under the condition.
3, the preparation method of catalysis electrode for silicon based minisize direct carbinol fuel cell according to claim 1 is characterized in that: adopting the thickness of physical evaporation method deposition layer of metal titanium layer on the described porous silicon layer is 200nm.
4, the preparation method of catalysis electrode for silicon based minisize direct carbinol fuel cell according to claim 1 is characterized in that: following technology is adopted in the pre-treatment of chemical plating:
(1) alligatoring: adopt 200 #~400 #Fine sandpaper polishing surface dries up after cleaning;
(2) sensitization: sensitizing solution composition and process conditions are as follows:
Stannous chloride 10~50g/L
Hydrochloric acid 30~50ml/L
The tin grain is an amount of
Room temperature 3~5 minutes
(3) activation: activating solution composition and process conditions are as follows:
Palladium bichloride 0.25~0.5g/L
Hydrochloric acid 20~35ml/L
15~25 ℃ 1~5 minute
(4) reduction: reduction Treatment Solution composition and process conditions are as follows:
Sodium hypophosphite 10~30g/L
Room temperature 0.5~2 minute
5, according to the preparation method of claim 1,2 or 4 described catalysis electrode for silicon based minisize direct carbinol fuel cell, it is characterized in that: solution composition of minus plate chemically plating platinum and process conditions are: Technological specification Parameter Pt(NH 3) 2(NO 2) 2/g·L -1 2~4 NH 4OH28%/ml·L -1 200~300 Add platinum salt earlier and add following reducing agent again Solid NH 2OH·HCl/g·L -1 25~50 80% hydrazine/mlL -1 8~25 pH 11±1.0 Temperature/℃ 40~50 Time/min 5~30
Positive plate chemically plating platinum-ruthenium alloy solution composition and process conditions are: Technological specification Parameter Pt(NH 3) 2(NO 2) 2/g·L -1 2~4 RuCl 3·3H 2O/g·L -1 2~6 NaNO 2/g·L -1 5~10 NH 4OH28%/ml·L -1 240~340 Solid NH 2OH·HCl/g·L -1 30~60 80% hydrazine/mlL -1 10~40 pH 11±1.0 Temperature/℃ 40~50 Time/min 5~30
CNB2005100103367A 2005-09-16 2005-09-16 Method for preparing catalysis electrode for silicon based minisize direct carbinol fuel cell Expired - Fee Related CN100369304C (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151424A (en) * 2013-03-12 2013-06-12 电子科技大学 Method for preparing metal electrode on surface of porous silicon by using improved chemical plating process
CN107876107A (en) * 2017-09-29 2018-04-06 海南汉地阳光石油化工有限公司 A kind of oil hydrogenation catalyst and preparation method thereof

Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
WO2019232835A1 (en) 2018-06-07 2019-12-12 上海尚理投资有限公司 Silicon pole plate and preparation method therefor, use of silicon in fuel cell, fuel cell stack structure, fuel cell and use thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638654B2 (en) * 1999-02-01 2003-10-28 The Regents Of The University Of California MEMS-based thin-film fuel cells
CN1349670A (en) * 1999-05-06 2002-05-15 三帝公司 Fuel cell and membrane
CA2392115A1 (en) * 1999-11-17 2001-05-25 Neah Power Systems, Inc. Fuel cells having silicon substrates and/or sol-gel derived support structures

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151424A (en) * 2013-03-12 2013-06-12 电子科技大学 Method for preparing metal electrode on surface of porous silicon by using improved chemical plating process
CN103151424B (en) * 2013-03-12 2015-12-02 电子科技大学 A kind of improvement chemical plating process prepares the method for metal electrode at porous silicon surface
CN107876107A (en) * 2017-09-29 2018-04-06 海南汉地阳光石油化工有限公司 A kind of oil hydrogenation catalyst and preparation method thereof
CN107876107B (en) * 2017-09-29 2020-08-14 海南汉地阳光石油化工有限公司 Petroleum hydrogenation catalyst and preparation method thereof

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