CN1798864A - Plasma uniformity - Google Patents

Abstract

A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Description

Plasma uniformity

The present invention requires in the U.S. Provisional Patent Application sequence number 60/459 of submission on April 1st, 2003,405, and the right of priority of " not specifying the transferee " in the non-temporary patent application sequence number of the U.S. that on March 18th, 2004 submitted to, the exercise question of above-mentioned two applications is " Slotted Electrostatic ShieldModification for Improved Etch and CVD Process Uniformity ", and it all quotes in full as a reference at this.

Technical field

The manufacturing of this paper relate generally to semi-conductor and/or photoelectric device, and relate to the manufacturing that is used at semiconducter device more especially and improve the etching of film on substrate or the method and apparatus of deposition uniformity.This paper discussion be plasma uniformity.

Background technology

In the manufacturing of semiconductor integrated circuit and photoelectric device, have a plurality of wherein will be on substrate the process of composition or deposited material layer.The etching of this material or sedimentation rate are usually in the success of technology and transistorized correct function and the unicircuit or most important for the interconnection of integrated optical component.For guaranteeing higher chip output, these speed must closely be controlled and keep evenly on the entire wafer zone.Usually, this etching or deposition are to produce in the isoionic reactor by sense coupling source therein to finish.

The homogeneity of etching on each wafer in such reactor, sedimentation rate or deposit film character depends on and keeps its reaction key element, ion and the group excellent homogeneity for the wafer flow.This just requires the specific distribution of the power deposition from the induction antenna to the plasma body.This distribution that depends on reactor shape and gaseous tension makes the generation speed of ion and neutral reaction component be similar to constant on wafer.These speed are the function of gas density and Electron energy distribution, and it must be spatially quite even.The energy of the plasma electron in the inductively coupled plasma source is provided by the rf electric field that or some drive coils produce.This coil often provides E-M energy according to nonaxisymmetrical mode or radial distribution ground for the plasma body in the source, makes to have angle or radially relevant (dividing other) heterogeneity in the plasma body of adjacent wafer.Thereby need eliminating these two kinds of heterogeneities makes the character of plasma body and etching or CVD sedimentation rate even.

Usually use the approximate RF coil that is spirally wound on around the rotational symmetry vacuum vessel to finish for the sense coupling of the RF power of the plasma body in the source.When being encouraged by the RF power source, this coil produces RF magnetic field and electric field in volume source, if there is not electrostatic shielding.When induction field (producing by changing magnetic flux) can effectively provide energy and keep plasma body for electronics, electrostatic field (being caused by RF electromotive force on the coil) was also inessential and can make the plasma potential adjustment.This electrostatic field makes sheath electromotive force control variation, electric charge to semi-conductor and photoelectric device damage be arranged, and is easy to container material and is splashed on the substrate.For reducing these problems, flute profile electrostatic sheild (for example see the U.S. Patent No. 5,534,231 of authorizing Savas, and it being herein incorporated by reference) can be set between RF coil and vacuum vessel.This screen can obviously reduce do not expect from from the conduction displacement current of the coil electrostatic field to the plasma body, this electrostatic field has caused plasma potential adjustment and other above-mentioned not desired effects.Can together use any type of electrostatic sheild with the inductively coupled plasma source, still meeting be penetrated the RF power of screen, have been found that the flute profile electrostatic sheild is a kind of efficient manner.

Electrostatic sheild, known for technology controlling and process with avoid the advantage of metallic pollution except it, there not be discovery to have the potentiality of controlling for inductively coupled plasma source ionic medium at present.The applicant does not find any use electrostatic sheild control plasma uniformity so far or uses the trial of the technology of inductively coupled plasma.

With reference to Fig. 1, its schematically illustrated prior art frustoconical electrostatic sheild 101, it has and is wrapped in around the screen and has near the plasma body generation coil 102 of even interval trough 103 that is distributed in its periphery.In screen 101 is plasma container 104.Groove 103 extends in about the coil, makes magnetic field more effectively penetrate.This screen in fact always is symmetrical in the groove of rule fixed width at interval.Therefore, this screen structure is for the plasma body heterogeneity, no matter is that angle or radial effect are very little or do not have.

Usually, the most of obstinate heterogeneity in this plasma body source is heterogeneity radially.So far, the common mode that such plasma body heterogeneity is reduced to lower level is to use bigger plasma source diameter.In order to realize that plasma source is generally the intimate twice of pending wafer diameter for the heterogeneity of the required very little per-cent of semi-conductive etching or CVD system.Generally, the diameter of plasma source comes the wafer for 8 inches that suitable homogeneity is provided for 14 inches to 16 inches, no matter shielded or not shielding.Unfortunately, this bigger source need to be easy to proportional thereby bigger wafer transmission chamber, and this makes that etching/CVD system is expensive more and requires proportional more very expensive semiconductor manufacturing factory (Fab) space, place.This demonstrates present situation, and is consistent with the process uniformity of necessity, and ignores the as far as possible little fact of plasma source that should make etching/CVD chamber for economic reasons.

Produced and have the good radially source of inhomogeneity reduced size, but pressure that only limits to operate and power range are less.Because the shape in source has very strong influence for the radial variations of plasma density, but can be clearly to some narrow source its homogeneity of condition optimization.Yet this source can't be used to handle the situation of different substantially pressure and power level.

Obtaining this result is because gas pressure intensity can the strong distribution that transports and influenced thus ionization speed that influences the high-energy electron in the source.It is very valuable for the versatility of technology among the IC Fab that plasma source can be used in the ability of various different pressure and gaseous constituent.Yet the economic advantages in less source are abundant, and therefore expectation finds that a kind of method is so that this little source can be used for realizing the condition of uniform plasma volume density flexibly.

The angle heterogeneity of source ionic medium volume density is configured with significance for the high RF frequency or the non-helical drive coil that are used for plasma generation.Under the situation of high RF frequency, this is because the variation of RF electric current is the function of position on the coil.13.56MHz frequency be used for the variation more than 20% of being changed to that 14 inches plasma sources cause RF current amplitude about 10% on the drive coil usually.Therefore, the angle heterogeneity may be enough big, and this will cause being sent to the azimuthal variation of the power on the plasma body.The azimuthal variation that this power injects will cause the plasma density heterogeneity of similar type, and its big young pathbreaker depends on the pressure and the size thereof of gas in the source.Yet this high frequency is used for driving source provides some benefits, because generator and matching network easy to understand and it are the ISM standard frequencies.Because expect to have a kind of effective means and compensate the non axial symmetry of injecting from the power of multi-turn drive coil.

It often is axially symmetric having proposed the density of groove in the electrostatic sheild and the size of groove in the prior art, and asymmetric because power injects in inductively coupled plasma, can't alleviate or reduce the angle heterogeneity.For example, authorize the U.S. Patent No. 5,234,529 of Johnson and utilize the flute length of variation vertically and the axial location that position adjustment is formed on the plasma body in the cylindrical source, but supposition is axially symmetrical, and plasma body there is suitably (evenly) radial density.In the patent of Johnson, the groove of the variation length that the screen by two block constructions produces only is used to be set directly at the screen of the tubular between RF coil and the plasma chamber.Johnson has clearly instructed the variability of this screen can be used to adjust the purpose of the plasma position on the wafer.Particularly, Johnson instruction is that adjustment with groove shape only is used to adjust the position of plasma body and is not the shape of plasma body.

Therefore, still have so still unsatisfied needs in the prior art, strengthen the value in manufacturing process medium-high frequency or non-rotational symmetry sense coupling source thereby promptly reduce or eliminate plasma body angle heterogeneity.In addition, expectation provides even, adjustable radial plasma parameters.

Summary of the invention

Be used for by implementing plasma related process and, introduce a kind of equipment and method the system that process object is handled to it.In one aspect of the invention, in treatment chamber, realize more uniform plasma body and technology, be used to use a kind of inductively coupled plasma source in reaction chamber, to handle the treat surface of process object, this inductively coupled plasma source utilize have an evenly spaced groove the groove electrostatic sheild arranged, produce asymmetric plasma density pattern at the treat surface place.Thereby there is the groove electrostatic sheild to adjust the plasma density pattern that adjustment is provided in described treat surface according to the mode of the described asymmetric plasma density pattern of compensation.Under a feature, the groove density pattern of the adjustment in the screen of adjusting forms, the first part of groove pattern of adjustment that feasible vicinity shows the first area of low plasma density has effective hole of the big increase in the average effective hole of the groove pattern of adjusting than integral body, thus in the first area, form the plasma density adjusted its greater than the gas ions density that reduces.Under another feature, by in the evenly groove pattern of integral body asymmetricly the broadening groove effective hole of increase is provided.

In another aspect of this invention, introduce a kind of equipment and method, it has treatment chamber, this treatment chamber usability coupling plasma source produces the plasma density with given radial variations characteristic on the treat surface of the electrostatic sheild process object therein that this inductively coupled plasma source use is given.Construct electrostatic shield arrangement to replace given electrostatic sheild according to the mode that on treat surface, produces the adjustment radial variations characteristic different with given radial variations characteristic.Under a feature, electrostatic shield arrangement on treat surface, produce than given radial variations characteristic more fixed adjust the radial variations characteristic.Under another feature, the inductively coupled plasma source defines symmetry axis, and electrostatic shield arrangement is configured to comprise the shape that extends through about the radius of described symmetry axis.Under another feature, electrostatic shield arrangement comprises the screen parts and the second outer screen parts at least the first.In the screen parts limit first aperture pattern and shield parts outward and limit second aperture pattern.In being enclosed within, outer screen parts shield near the parts.Outer screen parts internally shield the parts rotation mutually, and the aperture pattern of winning is cooperated according to the mode that the scope of adjusting the radial variations characteristic is provided on treat surface with second aperture pattern.Under a feature again, the swivel arrangement induction adjust the radial variations characteristic and rotate in response to the influence value of adjusting the radial variations characteristic in screen parts and outer screen parts one of them.Under further feature, electrostatic shield arrangement is constructed so that screen parts all are the structure of frustoconical with shielding parts outward in each.In the screen parts comprise in screen sidewall and shield parts outward and comprise outer screen sidewall, the screen sidewall is adjacent one another are with outer screen sidewall in making.Under another feature, electrostatic shield arrangement comprises at least the first screen parts and the second screen parts.The first screen parts limit first aperture pattern, support the second screen parts and shield parts to move according to the mode that produces the scope of adjusting the radial variations characteristic on treat surface is linear with respect to first.

Description of drawings

Be appreciated that the present invention by the accompanying drawing that briefly introduces below the combination with reference to following detailed description.

Fig. 1 is the perspective illustration of prior art electrostatic sheild assembly and plasma source, and it is being used for illustrating the even and equally spaced groove that is formed on screen assembly this illustrate;

Fig. 2 is the perspective illustration of tubular electrostatic sheild of the present invention, and it has groove distribution heterogeneous at its periphery, is used for quite favourable mode correction angle to heterogeneity;

Fig. 3 a is an isogram, shows to use the conventional electrostatic with uniform groove distribution to shield the etch-rate that produces on wafer surface, and the isogram of Fig. 3 a has shown tangible angle heterogeneity;

Fig. 3 b is another isogram, show the etch-rate that electrostatic sheild that use to adjust produces on wafer surface, it has replaced the traditional screen of the system of the isogram that is used for producing Fig. 3 a, and have groove density heterogeneous and distribute, compare with the figure of Fig. 3 a, the isogram of Fig. 3 b has shown for the heteropical tangible correction of angle;

Fig. 4 is the perspective illustration that an embodiment of electrostatic sheild assembly of the present invention is shown, and it has a magnification region in each groove, be used to adjust radially heterogeneity;

Fig. 5 for particle density to radially the distance (being the radial distance of Waffer edge and center wafer) hyperbolic chart, article one, curve produces with traditional electrostatic sheild, thereby and another curve uses the groove with adjustment greatly to improve radially inhomogeneity adjustment electrostatic sheild to produce;

Fig. 6 a illustrates to be used for the radially schema of a kind of embodiment of the technology of the position of rotation of parts of the used multi-part electrostatic sheild assembly of homogeneity of Control and Optimization;

Fig. 6 b illustrates to be used to control parts of multi-part electrostatic sheild assembly with respect to being used to optimize the radially schema of a kind of embodiment of the technology of the space relativeness of the miscellaneous part of inhomogeneity assembly;

Fig. 7 a is the local diagrammatic elevation view as the interior screen parts of parts of electrostatic sheild assembly, and it limits a plurality of grooves that separate, but in those grooves one only is shown;

Fig. 7 b to 7d is the local diagrammatic elevation view of the interior screen parts of Fig. 7 a, shields parts (only part illustrates) outward and is arranged near the interior screen parts, thereby show how can change effective hole by the relative rotation each other of inside and outside screen parts;

Fig. 7 e to 7g is the local diagrammatic elevation view of the interior screen parts of Fig. 7 a, in being arranged on, different outer screen parts (only part illustrates) shield near the parts, thereby show how can change effective hole, thereby produce continuously changing of effective hole site by the relative rotation each other of inside and outside screen parts;

Fig. 8 a and 8b show the local diagrammatic elevation view of screen parts, have wherein formed the shape of various exemplary grooves, and the RF that is used to slow down penetrates;

Fig. 9 a to 9c is the perspective illustration of two-piece type electrostatic sheild assembly, thereby in the separate each other mode of the ground movable RF of change magnetic field penetration of the rest part of the integral construction that is used to illustrate this assembly this illustrate and magnet switchboard and this assembly;

Figure 10 a is the perspective illustration with two-piece type electrostatic sheild assembly of inside and outside frustoconical shield member, its each part defines different groove shape, it cooperate with respect to the rotation of another screen parts with screen parts, and mode is for a change by each shape and area in the global pattern that shields effective hole that parts limited;

Figure 10 b to 10d is the diagrammatic elevation view that screen parts inside and outside the part of Figure 10 a are shown, an effective hole when showing inside and outside screen parts and being in different relative position, thus show several effective hole structure that can obtain according to this quite favourable mode;

Figure 10 e to 10g is the diagrammatic elevation view of a part that the outer screen parts of the interior screen parts of Figure 10 a and adjustment are shown, an effective hole when it shows inside and outside screen parts once more and is in different relative position, thus show several effective hole structure that can obtain according to this quite favourable mode;

Figure 11 a is the perspective illustration of another kind of two-piece type electrostatic sheild assembly, at the integral construction that is used to illustrate this assembly this illustrate, thereby it has in the frustoconical of trough of belt the screen parts and is configured in the main engagement screen component top and shields parts outward with the frustoconical that the relative rotation between the inside and outside screen parts changes the trough of belt of RF magnetic field penetration;

Figure 11 b to 11d is the schematic plan view at the screen assembly top of Figure 11 a, is being used to this illustrate illustrate that the relative rotation that utilizes between the inside and outside screen parts can obtain the various effective hole structure of a little;

Figure 12 a be have with the interior screen assembly of assembly shown in Figure 11 a similarly in the perspective illustration of two-piece type electrostatic sheild assembly of screen assembly, but its magnet switchboard is similar to the magnet switchboard of assembly shown in Fig. 9 a to 9c, and magnet switchboard and interior screen separate, thereby sufficient RF magnetic field penetration is provided; And

Figure 12 b to 12c is the perspective illustration of the two-piece type electrostatic sheild assembly of Figure 12 a, shows respectively with respect to interior screen parts to mediate and be positioned at the magnet switchboard of screen on the parts.

Embodiment

Propose following the introduction and be to make those skilled in the art can obtain and use the present invention, and propose with the text of patent application and requirement thereof.Various changes for described embodiment are conspicuous to those skilled in the art, and General Principle herein can be applied to other embodiment.Therefore, the embodiment shown in the present invention should not be limited to, but should meet and the corresponding to wide region of the principle of herein introducing and feature.

So the place introduce and experience checking during research and development of the present invention, the position of the groove by being inserted in the electrostatic sheild between the plasma container in coil and the inductively coupled plasma and the suitable variation of size can be adjusted the distribution of the power in injected plasma source.Therefore, can substantially improve the spatially uniform of plasma body and the spatially uniform of the technology that the article on plasma body that causes thus carries out.This technology comprises, for example, and depositing operation, etch process and any substantially technology that smooth working face is exposed to plasma body.Owing to make plasma density more evenly also will make it possible to improve for example this inductively coupled plasma to be used for IC the homogeneity of etching when making/peel off, so this is crucial.Generally speaking, expect that two types density improves: (1) has the improvement of the heteropical density distribution of angle, and the heteropical improvement of (2) radial density.With introduce with the screen of single-piece by the fixed form adjustment radially with the angle heterogeneity, and by using one of them parts to carry out adjusting automatically and changeably with respect to the screen of another two of moving or multi-piece type.

The application discloses having usually at least approximately perpendicular to the electrostatic sheild of coil winding with the groove of the wall trend that is parallel to the source that use high conductivity material (such as metal) is made.This groove is longitudinally arranged the prior art that the patent of the patent that almost has been used for the Savas that as above introduces at large and Johnson is introduced.To further introduce, thereby the difference of the disclosure and prior art is the variable slot density around the use source or along the circumferential direction changes the length of groove or width reduces the angle of RF E-M field or heterogeneity and improve the homogeneity of chip etching/peel off thus radially.

Angle density is adjusted

Introduced Fig. 1 in front, now with reference to remaining accompanying drawing, similar Reference numeral project like the representation class all the time in each accompanying drawing wherein.In addition, accompanying drawing is that the mode with signal serves as that the mode that strengthens the reader understanding is showed in essence, rather than is used for restriction.In addition, accompanying drawing is not pro rata, and only is used for illustration purpose such as the term of for example upper and lower, left and right, T﹠B, and is not should be understood that the orientation of operation is construed as limiting.

See Fig. 2 now, it schematically shows produced according to the invention and synoptically by an embodiment of the device of Reference numeral 200 expressions.Device 200 comprises the cylindrical shaped electrostatic shield 201 that is centered on by 2 circle RF ruhmkorff coils 202.The a plurality of grooves that are formed in the screen move towards perpendicular to the direction of RF ruhmkorff coil usually.Zone 203 illustrates (observing in the drawings) on the right side, the density of groove is lower, and the density of the regional groove shown in the left side is higher.This screen is used to proofread and correct the plasma system with the screen of uniform groove, and this system has non-equal plasma density and treatment rate, and wherein the plasma density on right side is higher than mean value and the plasma density subaverage in left side.That is, the angle heterogeneity appears in unadjusted system.This proofreaies and correct with the screen of groove heterogeneous by use, thereby thereby it has on the right side that less groove reduces that RF power penetrates and the plasma density at this place and have in the left side that more groove raising RF power penetrates and the plasma density at this place.In this exemplary embodiments, the groove in the screen can distribute with the interval (density) that changes in the side periphery of axial symmetric plasma source.The relative increase of the density of groove or minimizing can be used to etching or depositing operation to improve the angle heterogeneity of plasma body.

If the source has the shape (symmetry axis is effectively in the arctic) of dome, then groove is basically parallel to warp.In this embodiment, drive coil can according to the mode of spiral roughly be wrapped in dome partly or entirely around, make that the RF electric current is angle substantially.The direction of groove is therefore perpendicular to angle or circumferential direction about symmetry axis.Groove can extend under the zone that is covered by coil at least in part.If extending fully, groove then can realize power transmission efficiency bigger in plasma body by the dome area (about the coil region) that covers by coil.If the source is a round shape, then groove will be purely in axial direction.

Fig. 2 is used to illustrate the notion of variable slot density, and wherein plasma source is a round shape, although this notion can be used for the shape in any source.Groove can axially extend under the zone that is covered by coil and preferably extend beyond coil region up and down, as shown in the figure.Improve the plasma density distribution that inhomogeneity method at first is to determine to have the screen of evenly spaced groove.Can change the density of groove subsequently, make groove find lower interregional of plasma density every closeer and/or at high relatively interregional of density every wideer.Thus, have the zone transmission more power of higher groove density, and improve partial plasma density, and the zone that has higher density again behind the distributing slot is accepted less power and reduced plasma density thus.

With reference to Fig. 3 a and 3b, etched heterogeneity is depicted on the wafer 220, and wherein level line 222 shows the isopleth of the etch-rate that equates.Those isopleth separate from an isopleth to next bar with the change in etch rate that equates.Produce the etched pattern of two accompanying drawings with identical source.Fig. 3 a shows the etch-rate figure of the screen with uniform groove.Obviously, RF power in the plasma body to penetrate for uniform screen be that angle is uneven, and etch-rate one side is obvious higher than opposite side.In the density of contiguous highdensity area change groove to half of initial value, etch-rate figure change and performance shown in Fig. 3 b.The change of this groove density is illustrated in its groove of right side area of the screen device 200 of Fig. 2 usually and compares bigger with the groove in left side at interval.Usually, the density of groove increase near the zone of low etch-rate and zone at high etch rates near reduction, thereby adjustment and make etch-rate more even.Etched pattern shown in comparison diagram 3a and the 3b, illustrate the angle homogeneity be improved significantly.Obviously, the reduction groove density has changed close plasma body center and has been the highest density region at the center of wafer thus.

Because E-M penetrating in plasma body also has been found that it is the width of groove or the monotonic increasing function of length, the invention provides the adjustment of plasma density, thereby become more even by the width (or length) of the groove around the periphery in change source.In this case, the distance of the center to center between groove remains unchanged and the width/height variation, thus, more power is injected into the groove broad, and (groove can form only broad on the part of its length, thereby its end that can concentrate on groove minimizes electrostatic field and penetrates) or grow in the zone of (density is lower), and that less power is injected into groove is narrower or lack the zone of (density is very high).

These methods alone or in combination, can be adjusted the angle heterogeneity of plasma body fully, and make the symmetry axis rotational symmetry of plasma density (and etch-rate or CVD characteristic) about the source thus.This technology relies on the azimuthal variation of groove characteristic, and wherein groove normally extends perpendicular to angular orientation.

Radial density is adjusted

There is a class to reduce the radially heteropical of plasma body and or even the groove adjustment carried out automatically.In one embodiment, this is applied to the wherein plasma source of the electrostatic sheild of the contiguous trough of belt of coil.Usually there are two kinds of methods to finish the radially adjustment of density.The first, can be at one end or the other end prolong or shorten groove, perhaps the second, can than the other end closely at one end near (or at one end) or along the width of its whole length change groove.

Referring now to Fig. 4, conical shield arrangement constructed in accordance is synoptically by Reference numeral 400 expressions.Screen device 400 comprises the electrostatic sheild 401 with the plasma body generation coil 402 that is wrapped in around shielding and the even interval trough 403 that distributes around it.In screen is plasma container 404.Groove 403 extend coil turn about, thereby magnetic field is more effectively penetrated.Groove is defined as in following/outer end has expansion section s or expanded hole 405, thereby allows magnetic field penetration.Experience confirms the effect that expansion section s 405 has played increases plasma body periphery density, and has increased the etch-rate of wafer periphery thus.Hole 405 has the plasma body of reduction plasma container bottom and the RF at increase plasma container outer rim place penetrates the effect that the simultaneously relative RF that reduces the plasma container center penetrates, change the radially homogeneity of plasma body thus, and the radial etch of the wafer of under this environment, handling or deposition uniformity.The shape that should be understood that the expansion section s of groove can still provide advantage described herein simultaneously by the variety of way adjustment.According in the disclosure and the adjustment of introducing all the time in claims screen parts, expect that primary screen parts can be changed in some cases, for example, by the hole of broadening such as groove or by forming new hole, in other cases simultaneously, may must provide new/the screen parts adjusted, for example, when the expectation adjustment pattern in the existing setting in hole and hole to be formed can't compatible overlay.

Fig. 5 shows the actual measurement ion density of waiting to introduce the plasma source of adjusting screen with another kind of form, and it is compared with the ion density of using even screen to show.The drafting of ion density is the distance of radially measuring from outer rim to the center wafer of wafer relatively.Use the screen structure of frustoconical, as shown in Figure 4.The ion density of using unadjusted screen is by Reference numeral 420 expressions, and the ion density of the adjustment that provides by the screen of adjusting is by Reference numeral 422 expressions.Curve 420 (being shown as solid line) produces in having the source of electrostatic sheild, and this electrostatic sheild has the groove that extends on the top, source.That is coil 402 tops that extend in shown in Figure 4.In the part (top of groove shown in the figure 403) of the axle in the most close source of having blocked groove, the density at center reduces, shown in the dotted line among Fig. 5 422.Notice that when comparing those curves, (therefore, at the outer rim place of wafer) density almost changes, and is illustrated in this power deposition that is in the plasma body and substantially changes at the edge plasma place.Can block groove according to any suitable mode, such as, for example by using crown cap.In another embodiment, can be towards the magnetic field switchboard made from outside mobile conductive material from electrostatic sheild, wherein switchboard controllably moves, with reference to follow-up some in the accompanying drawing as seen.

In the adjustment of automatic plasma body is implemented, can use transmitter and use real-time input, the parameter at sensing bulk measurement wafer surface place is such as etching and/or the sedimentation rate in the specific location of wafer surface.For example, can use the deposition and the etch-rate of reflective instrumentation amount certain material.In addition, can use any suitable luminescence technology in the part at interval position measurement etching and/or sedimentation rate, be used for determining homogeneity.Can in this automatic embodiment, use various motors and control device.

Fig. 6 a and 6b show the automatic control scheme that is used to operate two-piece type electrostatic sheild assembly.Fig. 6 a shows especially and is used to operate rotatable screen parts, common method by Reference numeral 440 expressions.Utilize this control scheme, thereby the shape of the groove of the gained that rotary components outer or top screen cause by the rotation by two overlapping patterns of the opening in each of screen assembly independently or size are (promptly, effective hole) variation changes radio frequency penetrating in the plasma container, shown in the subsequent drawings some.Step 442 is carried out the suitable measurement of show uniformity.Step 443 determines whether the uniformity measurement result can accept.If homogeneity can be accepted, step 444 is held in its current position with screen protection.If homogeneity is outside the tolerance zone that requires, step 446 compares the homogeneity (for example, etch-rate or sedimentation rate) of center wafer and the homogeneity of Waffer edge.If the processing speed of center wafer is low, step 447 is along the direction rotation rotatable screen part that increases the center wafer processing speed.In this example, this direction is designated as counterclockwise.Rotation orientation change into the processing speed difference from the center to the edge or the function of plasma density difference.On the other hand, if the processing speed of center wafer is with respect to the processing speed height of Waffer edge, step 448 is along opposite direction (be clockwise direction in this example) rotation rotatable screen part, thus the processing speed of reduction center wafer.All processes can repeat in the entire treatment process of wafer all the time by the mode that is fit to.

Thereby Fig. 6 b shows to be used to operate and can separate the control scheme that influences radially inhomogeneity screen parts.Utilize this control scheme, thereby the variation of rising the shape of the gained groove that the variation by gap between the screen parts that separate by two of the outer of assembly or top screen causes or size changes to penetrating of radially RF in the plasma container, as further introduction of some institutes in the reference subsequent drawings.Most of step that this technology has adopted the front to introduce with reference to Fig. 6 a, these steps are arranged by identical mode substantially.Yet step 447 is substituted by step 449, increases the processing speed of relative center wafer thereby the latter increases the interval of screen parts, thereby and step 450 reduces to shield the processing speed that the interval of parts reduces relative center wafer.

The variation of distance has changed the processing speed of center wafer with respect to Waffer edge between two parts of screen device.

Perhaps, can adopt and wherein on treat surface, carry out the method that off-line measurement is determined the homogeneity parameter.Thereafter, thus the mode that can adjust by expectation influences processing such as improving homogeneity.

The end towards groove block than the other end or the situation of broadening groove under, the RF E-M radiating spatial distribution that penetrates screen can change.Block or the broadening groove has changed the radially distribution of plasma generation owing to the change of the distribution of power absorbed in the plasma body.This has caused the changes in distribution of electronic heating subsequently, and the result is to have changed the radial distribution of ionization rate, plasma density and etching speed.

In one embodiment, the top of plasma source can be the frustoconical that the centre hole in source is higher than the uppermost edge of screen.(being similar to the source among Fig. 4).In the case, (distance axis is farther) prolongs or during broadening the groove in screen in the bottom, allow plasma body more the long radius place or stride across plasma body more the E-M radiation of long radius penetrate increase.If on the other hand, groove is in the position of more close reactor center axle constriction or block fully,, can make the plasma density at Waffer edge place increase with respect to the center wafer place owing to have bigger power to inject in outer radius.In order to make plasma body more even, this back one in the screen changes will compensate the not adjustment plasma density higher towards the center, increase the density and the etching speed of edge and cause etching/stripping technology more uniformly.

In another embodiment of the present invention, screen can be made of two parts, and one fixing with respect to given groove structure, and second overlap to small part and the groove pattern that is complementary to first parts.This pattern, for example, the triangular groove of identical center heart angular separation in the groove that can comprise fixed width in first parts and second parts.Because second parts are made for respect to the rotation of first parts, the length of groove changes, and enters the radial distribution change of the power of plasma body, causes the variation of plasma density and etch rate distribution.

Fig. 7 a to 7d schematically shows the work of an embodiment, screen parts 452 and outer screen parts 453 in this embodiment has, its each only partly illustrate.The screen device of this multi-piece type, similar with the screen of single-piece, can use such as any suitable metal of aluminium or copper and use to form such as mechanical workout, any suitable metal forming technology that rolls and weld.How the outer screen that these accompanying drawings demonstrate rotation two-piece type electrostatic sheild assembly changes the height (only partly illustrating) with respect to the position of RF ruhmkorff coil of effective groove.Even the device of a groove only is shown, it will be appreciated that in identical screen assembly, to form any amount of groove.Screen parts 452 and ruhmkorff coil 454 in Fig. 7 a shows, and not outer screen parts are used for clearly illustrating these features with respect to outer screen parts.Screen groove 456 in interior screen defines.Fig. 7 b additionally shows the cross section of the outer screen parts 453 that overlap with interior screen parts 452.Staggered sectional hole patterns 458 is limited by this cross section of outer screen parts 453.The combination of inside and outside screen causes defining the upwardly extending bottom effective vent/hole 460 from interior screen groove 456.Can see that the relative rotation of two screen parts causes the vertical shifting of effective vent.

How the outer screen that Fig. 7 c shows rotation two-piece type electrostatic sheild assembly changes the height of groove with respect to RF ruhmkorff coil position.Particularly, inside and outside screen position combines and limits length and be approximately equal among Fig. 7 a the effectively effective vent 460 ' of hole 460 length, and it moves up and makes and determine centers with respect to ruhmkorff coil 454.This changes, with the relative position of groove any other such change similarly, changed radially plasma density, this causes etching or the inhomogeneity influence of depositing operation.

The further change of rotation relationship between screen 452 and the outer screen 453 in Fig. 7 d shows, thus generation with Fig. 7 a in the amount opposite effective hole 460 of moving up in the position in effective hole 460 with respect to ruhmkorff coil 454 ".This of groove relative position changes the radially RF field that change is entered in the relevant plasma container (not shown) and penetrates, and to causing influencing etching or the radially inhomogeneity radially plasma density of depositing operation produces corresponding influence.

Refer again to Fig. 7 a to 7d, the hole of regular length can be moved with the length of quite favourable mode along unadjusted groove.Effectively the change of the relative height of groove can be used the notion shown in the following explanation, for increase progressively or successive.Another patterns of openings can be used to realize that the rotation RF with respect to two screen parts penetrates the friction-motion speed of change.Should be understood that at this point and introduce that this change can be used for variety of way.For example, shield 453 grooves that can limit outward, thereby be used for aiming at effective hole that this overall length optionally is provided with it corresponding to groove 456 overall lengths.As another example, can exchange the pattern of inside and outside screen.

In Fig. 7 e to 7g, the outer screen 453 of Fig. 7 b to 7d substitutes with the outer screen of adjusting 462, it only is shown limits outer a section of shielding hole 464.Shielding the hole in addition is typical continuous geometry shape, but not stepped edges, thereby thereby one of moves in having produced when changing its relative position about the length in hole and vertical position or both the continuous variation in effective hole at inside and outside screen parts.In Fig. 7 e shows screen hole 456 with shield outward aiming at it and unite the effective hole 466 that extends upward and have whole parallelogram shape bottom that limits from groove 456 between the hole 464.Fig. 7 f and 7g show screen parts are further rotated down effective hole 466 with respect to another screen parts different positions.Therefore, effectively the position in hole can change according to the successive mode, thereby changes the height of effective hole with respect to RF ruhmkorff coil 454 positions.That is, present embodiment provides the continuous adjustment of groove position and has changed near the ability of the useful length in effective hole up and down in groove 456 ends of not adjusting.The change of this groove relative position will change the radial penetration of RF field in the relevant plasma container (not shown), and will produce corresponding influence to plasma density radially, and radially plasma density will exert an influence to the radially homogeneity of etching or depositing operation.Can use multiple other patterns of openings to realize that RF penetrates the friction-motion speeds of change with respect to the rotation of two screen parts.Utilize the disclosure of being grasped, can easily carry out all these adjustment.

Fig. 8 a shows has the various difform screen parts 470 that are formed on groove wherein, thereby play the effect of great majority for the example of some in the asymmetric multiple different slots shape, it can be used for relaxing RF penetrating to relevant plasma container (not shown).The Different Diameter that every kind of shape (using with other groove of identical or analogous shape usually) will draw in the plasma container of being correlated with penetrates to RF, and every kind of shape will influence the plasma density of gained and homogeneity radially on the plasma process parameters such as pressure, power, gas type, gas flow rate and bias voltage thus.Notice that these shapes can be used for the screen of single type, perhaps be used for the screen of two-piece type with other form fit that is fit to.

Fig. 8 b shows the screen parts 470 with the other multiple difform groove that is formed at wherein once more, thereby plays in the multiple symmetrical channels shape example of some, and it can be used for relaxing RF penetrating to relevant plasma container (not shown).Equally, the Different Diameter that every kind of shape will draw in the relevant plasma container penetrates to RF, and every kind of shape will influence the plasma density of gained and homogeneity radially on some plasma process parameters thus.Same attention, these shapes can be used for the screen of single type, perhaps are used for the screen of two-piece type with other form fit that is fit to.

Notice that the shape among Fig. 8 a and the 8b will influence radially heterogeneity at it during as screen a part of, wherein this screen is configured to comprise the shape that extends through about the radius of the symmetry axis of plasma source.As nonrestrictive example, screen can be taper shape, frustoconical, trapezoidal (cross section) or cheese.In these cases, the field will strengthen at the lower region of container.Obviously, thus these shapes can be inverted the field that strengthens container top.

Note Fig. 9 a now, it shows another embodiment of electrostatic shield arrangement of the present invention, and it is generally by Reference numeral 500 expressions.Device 500 comprises magnetic field switchboard 502, and they can be with respect to trough of belt frustoconical shield member 504 rotations that are arranged on around the plasma source (not shown).Lifter motor 506 is connected in switchboard 502 by axle 508, is used for moving switchboard with respect to screen parts 504.Note, can use automatic control easily based on Fig. 6 a to 6b and above-mentioned relevant introduction thereof.

Fig. 9 a shows near the plate 502 that is arranged at least the screen parts 504, makes switchboard more as " cap ", and Fig. 9 b and 9c are used to show and move to and the plate 502 that shields the position that parts separate.Use this to relatively move, the RF field is to the influence that has been subjected to the change of spacing distance between magnetic field switchboard and the electrostatic sheild that penetrates at relevant plasma container center.This gap can be zero or can be very big.During interval very big (Fig. 9 c), with the distance ' ' d ' ' of magnetic field switchboard, magnetic field is penetrated in the container in screen parts 502 centers with a ratio gap hour higher relative density.This since between screen and the switchboard the bigger port area in container top place (screen parts) cause, and can penetrate bigger field density.(Fig. 9 a), be spaced apart zero between this place's screen and switchboard, the magnetic field line that can be penetrated into the center of container with less obstruction is obstructed now fully to utilize the switchboard of its lowest position.As a result, plasma density is higher relatively in the outer radius of wafer (not shown) in the outer radius of container thus.The ability of this change magnetic flux density allows the radially control of etching or deposition uniformity.

Still with reference to Fig. 9 a to 9c, the bottom of screen device has been generally slot part, and the largest portion of ruhmkorff coil can be close to this bottom, although this and inessential.The groove of bottom can sufficiently long, and the one road extends to the top of end screen parts, as shown in the figure, although this is dispensable.Usually groove is less at the top of this device (being magnetic control making sheet), and enough thick, makes it can not allow magnetic flux to penetrate wherein.Equally, when removing or obviously vertically rise this top of screen, it allows a large amount of magnetic flux to enter the center in source and pass through plasma body.The field that the center increases penetrates the plasma density that has increased the injection of E-M power and this place, and has increased the relative etching/peeling rate of center wafer thus.Thereby thereby this screen top can move up to allow more power be penetrated into the center or move down the power that allows still less and penetrates wherein.

When using the embodiment of Fig. 9 a to 9c, the ruhmkorff coil 454 that the outer circle of use screen assembly schematically shows is (only shown in Fig. 9 a, although being appreciated that this coil also exists in all the other accompanying drawings), and screen device 500 can be constructed so that plasma density (and etching speed) is even under subatmospheric when the switchboard 502 vicinity plasma sources of screen.During air pressure in the increase source, density and etching speed reduce in the position of more close plasma body centre portions.Under the situation of this higher pressure, certain distance is then risen at the top of screen, makes more power be coupled near plasma center.If can also raising at the center and make, structure screen rightly, plasma density and etching speed equal edge substantially.Thus, thus screen top mobile becomes a kind of power of adjusting injects the electronics heat transfer that the radial distribution compensation reduces and makes plasma body keep uniform mode.When implementing this embodiment, can pre-determine the accurate dimension at screen top, and the structure in source should make top mobile can allow plasma density and etching speed more even under the expected range of pressure.

With reference to Figure 10 a to 10d, the another embodiment of electrostatic sheild assembly of the present invention is generally by Reference numeral 600 expressions.The relative rotation of assembly 600 by two different parts of this assembly changed RF field penetrating in the plasma container (not shown).Though can move two parts, keeping a part stationary and only move another parts can be convenient.Screen assembly 600 is made of the rotatable outer screen 606 of screen 602 in the immobilized that limits a plurality of rectangular tanks 604 and a plurality of trapezoidal holes 608 of qualification.This rotation use realizes by the motor 609a that axle 609b rotatably is connected in outer screen 606, is used for rotating shown in arrow 609c.Motor 609a can use suitable controller 609d control.This control device is easy to implement and can be used to any embodiment of rotation control that needs that rotation control is provided.Small adjustment provides wherein adopts straight line and non-rotating mobile control.Notice that " groove " (in general, opening) that is fit to shape can be used for making up with " hole " of suitable shape, and this diagram is not intended to become restriction.

Figure 10 b to 10d is under counterrotating situation, along three in the mutual orientation of not limitting quantity, the operation of screen device 600 has been described by the interior screen that comprises a groove 604 and a hole 608 respectively 602 and the enlarged view of outer screen 606 that part is shown.In this figure, effectively the overhead height and the width in hole are adjustable.Figure 10 b shows to rectangle but the effective hole 610 narrower than the groove 604 of interior screen parts, and the length in this effective hole does not change with respect to groove 604.Figure 10 c shows effective hole 610 ', wherein goes up the extension with respect to groove 604 constrictions.Figure 10 d shows effective hole 610 " not only go up the extension constriction, and its height is compared also with groove 604 and has been reduced.Therefore, effectively hole dimension reduces with respect to the fixed position of RF ruhmkorff coil (not shown) or increases, and the solid bottom position in effective hole is provided, and changes RF penetrating to the plasma container (not shown) of being correlated with thus.Thereby also can in screen, use other opening to form different RF penetration density.

Figure 10 e to 10g shows the screen device 600 that uses the outer screen parts of adjusting 606 '.Basically be inverted in the hole 608 of Figure 10 a to 10d, and use Reference numeral 608 ' expression in Figure 10 e to 10g.Therefore, effectively the extension of going up most in hole 610 ' keeps, and effectively the lower extension branch in hole can reduce width or effectively the hole can shorten further.That is, the bottom position of groove reduces with respect to the fixed position of RF ruhmkorff coil (not shown) or increases, and fixed groove tip position is provided, and changes RF penetrating to relevant plasma container (not shown) thus.Particularly, Figure 10 e shows and has groove 604 total lengths but effective hole 620 that width reduces.Figure 10 f shows effective hole 620 ' of the bottom with constriction, and Figure 10 g shows effective hole 620 of the bottom with further constriction ".As mentioned above, thus can use other opening to form different RF penetration density.

Consider the invention of above-mentioned Johnson once more, only instructed columnar screen.Being used to change the inhomogeneity quite favourable two-piece type trough of belt screen of the present invention of plasma radial is not cylindrical shield.It is very favourable that the present invention admits to have the screen of containing with respect to the shape of system's symmetry axis radius (being the part conical surface, flat top or dome surface).Utilize such screen, the mutability of groove can produce the radially-arranged variation that the power in the plasma body injects.This power injects the variation that the variation that distributes has caused the plasma radial density distribution.

Figure 11 a shows the adjustment form of electrostatic sheild embodiment shown in Figure 10 a, generally by Reference numeral 700 expressions.This accompanying drawing shows the electrostatic sheild assembly of two-piece type, and the top 704 by two-piece type electrostatic sheild assembly is by rotating control RF penetrating in the relevant plasma container (not shown) shown in the arrow 702 thus.This assembly also comprise bottom 706 its have the sidewall 708 that limits the periphery and by its extend internally and with the roof 710 of the last peripheral adjacency of sidewall 708.Ruhmkorff coil 454 is schematically illustrated and be set to adjacent sidewall 708.Notice that top 704 is shown that to separate with bottom 706 be for clearly purpose is described, and treats to move towards its working position as arrow 711 indications.Sidewall 708 and roof 710 are engaged in the bottom 706 of screen assembly and limit a plurality of grooves that separate 712.Yet, in this example, each of groove 712 be defined as that the edge bottom that has with screen assembly bottom separates bottom 714.Groove 712 is successive and extends to roof 710 towards its center.Each groove 712 has the structure of whole wedgewise.

Still with reference to Figure 11 a, the top 704 of screen embodiment 700 comprises the center plate-shaped member 716 and the peripheral edge 718 that extends of general planar downwards.Top 704 limits the groove 720 of a plurality of wedge shapes, and it optionally rotatably can be aimed at the topmost of groove 712 in the screen assembly bottom.Thereby showing, this accompanying drawing aims at the top allow the screen that maximum RF field penetrates.Equally, top screen part is shown as by the bottom and raises up, and only is for demonstration groove pattern aligned purpose in two screen parts.

11a is with reference to Figure 11 b to 11d in conjunction with the accompanying drawings, and its each accompanying drawing comprises that T﹠B screen parts rotate to the schematic plan view of the screen assembly 700 of different relative positions.Note, only schematically shown the flat of going up most of screen parts for simple purpose.Among Figure 11 b, the groove 720 in the screen part of top is aimed at the groove 712 in the end screen part substantially.Thus, thus the groove on the open fully screen assembly top of two component alignment of screen assembly, thus in the relatively large effective hole of qualification, the top of whole assembly.Among Figure 11 c, arrange two screen parts, thereby partly seal the groove on the screen assembly top, reduce the relative dimension in the effective hole shown in the whole screen assembly top last 722 ' thus.Among Figure 11 d, two screen partial rotation are aimed at, and make effective hole complete closed on the screen assembly top, penetrate to the RF at the plasma container (not shown) center of being correlated with thus to minimize.

With reference to Figure 12 a, the electrostatic sheild assembly that produces according to the present invention is generally by Reference numeral 800 expressions.Assembly 800 is similar to the screen assembly 500 of Fig. 9 a to 9c, the minority difference that limits for succinct purpose except this introduction.Particularly, screen assembly 800 comprises that the 706 identical ends of end screen part of basic and Figure 11 a to 11d shield part 802.Magnetic control making sheet 804 is moved in the mode shown in Fig. 9 a to 9c according to the mode that the RF field that changes the screen assembly top penetrates.This moves by double-headed arrow 806 expressions.Figure 12 b shows the switchboard 804 that mediates with respect to end screen part 802, and Figure 12 c shows the switchboard 804 that is positioned on the end screen part 802.

Though the disclosure introduced the article on plasma volume density adjustment its according to after determining density regions, increasing plasma density in this zone by the effective screen hole that increases contiguous this zone then, it is effective equally near the effective screen hole that effectively reduces the zone with higher plasma density.Any mode has produced same notion result.

Broadly summarize, herein disclosed is and use the groove electrostatic sheild that has to form the embodiment of more uniform plasma body, be used to use the inductively coupled plasma source processing process object that produces asymmetrical plasma density pattern in treat surface with evenly spaced groove.This has the groove electrostatic sheild to adjust according to the mode of compensation asymmetric plasma density, thereby the plasma density of adjustment is provided in treat surface.Introduced radially uniform more plasma process, wherein constructed the given electrostatic sheild of electrostatic shield arrangement replacement according to being provided at the mode that produces the radial variations feature of adjusting on the treat surface.The inductively coupled plasma source defines symmetry axis, and electrostatic shield arrangement is configured to comprise the shape that extends through about the symmetry axis radius.

Have the specific various parts of tendency separately although above-mentioned physical embodiment has been depicted as, should be understood that the present invention can adopt various concrete structures, wherein each parts are arranged on each position and are orientated mutually.In addition, the method for Jie Shaoing can be adjusted by multiple mode herein, for example by the rearrangement order, adjust and reconfigure each step.Therefore, device obviously disclosed herein and methods involving can be with various structures with the different ways adjustment, and the present invention can not break away from the spirit and scope of the invention with multiple other specific form enforcement.Therefore, that this example and method are answered taken as illustrative and nonrestrictive, the details that the invention is not restricted to herein provide.

Claims (51)

1. method that is used for producing more uniform plasma body and processing at treatment chamber, be used to utilize have an evenly spaced groove the groove electrostatic sheild arranged, use produces the inductively coupled plasma source of asymmetric plasma density pattern at the treat surface place, handle the treat surface of process object in reaction chamber, described method comprises step:

Thereby provide the mode of the plasma density pattern of adjustment to adjust the described groove electrostatic sheild that has in described treat surface according to the described asymmetric plasma density pattern of compensation.

2. the method for claim 1, wherein asymmetric plasma density pattern comprises the first area with the low plasma density that is lower than the average plasma density of asymmetric plasma density pattern, and the step of wherein adjusting described screen is included in and forms the groove pattern of adjusting in the screen of described adjustment and make the first part of the contiguous described first area of groove pattern adjusted comprise the bigger effective hole of increase, average effective hole of adjusting the groove pattern than integral body, thereby sets up the adjustment plasma density bigger than described low plasma density in described first area.

3. the method for claim 1, wherein asymmetric plasma density pattern comprises the first area with the low plasma density that is lower than the average plasma density of asymmetric plasma density pattern, and the step of wherein adjusting described screen is included in the adjustment pattern that forms opening in the screen of adjustment makes the contiguous described first area of the adjustment pattern first part of opening comprise the bigger effective hole of increase, average effective hole of the adjustment pattern of ratio open, thereby sets up the adjustment plasma density bigger than described low plasma density in described first area.

4. method as claimed in claim 3, comprise the wherein said described evenly spaced groove that the groove electrostatic sheild arranged along circumference have the groove electrostatic sheild around limiting uniform groove density and each groove limits the channel opening of equal areas, and the groove density of the described groove of the contiguous described first area of the screen of wherein said adjustment is greater than this uniform groove density.

5. method as claimed in claim 3, the wherein said described evenly spaced groove that the groove electrostatic sheild arranged along circumference have the groove electrostatic sheild around limiting uniform groove density and each groove limits channel opening unadjusted, equal areas, and the screen of wherein said adjustment comprises the groove setting of contiguous described first area, described groove setting is adjusted groove by at least one and is constituted, and described adjustment groove has the channel opening of adjustment, and it defines contiguous described first area and greater than the described adjustment area of not adjusting area.

6. in the treatment chamber in the inductively coupled plasma source that produces the plasma density with given radial variations characteristic on the treat surface of using in process object, use given electrostatic sheild in this treatment chamber, a kind of method comprises step:

Construct electrostatic shield arrangement to replace described given electrostatic sheild according to the mode that on described treat surface, produces the adjustment radial variations characteristic different with described given radial variations characteristic.

7. method as claimed in claim 6 comprises and uses electrostatic shield arrangement to produce on described treat surface than the given radial variations characteristic step of the described adjustment radial variations of constant characteristic more.

8. method as claimed in claim 6, wherein said inductively coupled plasma source defines symmetry and takes out, and described electrostatic shield arrangement is configured to comprise at least one side wall arrangement, and it has the shape that extends through about the radius of described symmetry axis.

9. method as claimed in claim 8, thereby comprise and form the adjustment slot device that described electrostatic shield arrangement comprises that the adjustment groove by a plurality of elongations constitutes, its each be included in the length that extends through the part of described at least radius in the described sidewall, and its each comprise at least in part and to be used to produce described adjustment radial variations characteristic along the width of described length variations.

10. method as claimed in claim 8, wherein said electrostatic shield arrangement are whole at least to be tepee structure.

11. method as claimed in claim 8, wherein said electrostatic shield arrangement are whole at least is that frustoconical is constructed.

12. method as claimed in claim 8, wherein said electrostatic shield arrangement are whole at least is that cheese is constructed.

13. comprising, method as claimed in claim 8, wherein said electrostatic shield arrangement be set to the tabular upper surface that intersects with described symmetry axis.

14. method as claimed in claim 8, wherein constitution step comprises that thereby described electrostatic shield arrangement is set comprises the screen parts and the second outer screen parts at least the first, the screen parts limit first aperture pattern and described outer screen parts limit second aperture pattern in described, and the interior screen parts outside and contiguous in shield parts outside the screen member supporting and make the outer parts that shield internally shield parts mutually and rotate, the aperture pattern of winning is cooperated with the mode of second aperture pattern according to the scope that described adjustment radial variations characteristic is provided on described treat surface.

15. method as claimed in claim 14 comprises being used for responding to the influence value of adjustment radial variations characteristic and response adjustment radial variations characteristic and rotating interior parts and the outer swivel arrangement that shields one of parts of shielding.

16. method as claimed in claim 14, wherein said electrostatic shield arrangement is constructed so that the screen parts all are the structure of frustoconical with outer screen parts in each, screen sidewall and the described outer parts that shield comprised outer screen sidewall in described interior screen parts comprised, it is adjacent one another are with outer screen sidewall to shield sidewall in making.

17. method as claimed in claim 8, wherein constitution step comprises that thereby described electrostatic shield arrangement is set comprises at least the first screen parts and the second screen parts, the described first screen parts limit first aperture pattern, and support the described second screen parts in the first screen parts outside, be used for that the screen parts are linear moves relative to first according to the mode of the scope that described adjustment radial variations characteristic is provided on described treat surface.

18. method as claimed in claim 17, the wherein said first screen parts are the frustoconical structure with narrow end, support the described second screen parts be used for towards or move away from the narrow end of the first screen parts.

19. method as claimed in claim 18 comprises forming the described narrow end with through hole, and the described second screen parts towards or move away from described through hole.

20. method as claimed in claim 18, wherein the frustoconical structure of the first screen parts comprises circular cone sidewall with upper peripheral edge and the roof with outer peripheral edges of the upper peripheral edge that is connected in the circular cone sidewall.

21. cooperating, method as claimed in claim 20, wherein said circular cone sidewall and described roof limit according to the whole aperture pattern of successive mode from the circular cone sidewall to roof.

22. method as claimed in claim 21 comprises that forming described whole aperture pattern is the arrangement along circumference of wedged hole, its each be defined as base edge and the summit in described roof that has in the circular cone sidewall.

23. method as claimed in claim 8, wherein constitution step comprises that thereby described electrostatic shield arrangement is set comprises at least the first screen parts and the second screen parts, described first the screen parts limit first aperture pattern and described second the screen parts limit second aperture pattern, and at the described second screen parts of the first screen parts outside support, be used for moving about symmetry axis and with respect to the rotation of the first screen parts, this rotation is moved according to the mode that produces the scope of described adjustment radial variations characteristic by making the relative first screen parts rotation of the second screen parts on described treat surface.

24. method as claimed in claim 23, the wherein said first screen parts are to have the circular cone sidewall and by the frustoconical structure of the narrow end of upper surface sealing, and described circular cone sidewall and described upper surface cooperate and limit described first aperture pattern for by a plurality of spaced apertures of successive mode from the circular cone sidewall to upper surface, and the described second screen parts form comprise according to the major surfaces of described upper surface disposed in opposing relation of the first screen parts, described major surfaces is limited with a plurality of grooves, as second aperture pattern, with the described spaced apertures complementation that is limited to the first screen parts upper surface qualification, and the second screen parts are set are used for, make the second screen parts adjust described radial variations characteristic with respect to the rotation of the first screen parts about described symmetry axis rotation.

25. method as claimed in claim 24, wherein the described groove of the described spaced openings of first aperture pattern and second aperture pattern each be configured to wedge shape, making screen each opening in the parts of winning comprise base edge in the circular cone sidewall and the summit in the described upper surface.

26. method as claimed in claim 24, comprise that thereby forming the described second screen parts comprises extending out from the outermost edge of described major surfaces and become the train of dress of opposed relationship with the described circular cone sidewall of the first screen parts, and at least a portion of described second aperture pattern is limited in the described train of dress.

27. the method for claim 1 comprises and uses semiconductor wafer as described process object.

28. in comprising the treatment system of treatment chamber, a kind of equipment that is used in described treatment chamber, producing more uniform plasma body and processing, described treatment chamber is used for usability coupling plasma source and handles the object that wherein has treat surface, described inductively coupled plasma source uses given electrostatic sheild to produce asymmetrical plasma density on treat surface, and described device comprises:

The electrostatic shield arrangement of adjusting is used to replace described given electrostatic sheild, thereby the described asymmetric plasma density pattern of the feasible electrostatic shield arrangement compensation deals surface of adjusting provides the plasma density pattern of adjustment on described wafer.

29. equipment as claimed in claim 28, wherein asymmetric plasma density pattern comprises the first area with the low plasma density that is lower than the average plasma density of asymmetric plasma density pattern, and the electrostatic sheild of wherein said adjustment comprises that the first part of the contiguous described first area of the feasible groove pattern of adjusting of the groove pattern of adjustment comprises the bigger effective hole of increase, average effective hole of adjusting the groove pattern than integral body, thereby forms the adjustment plasma density bigger than described low plasma density in described first area.

Producing the inductively coupled plasma source of the plasma density with given radial variations characteristic on the treat surface of process object and use given electrostatic sheild in this treatment chamber 30. have its use of a treatment chamber in a system, a kind of equipment comprises:

Electrostatic shield arrangement is used to replace described given electrostatic sheild, thereby produces the radial variations characteristic of the adjustment different with described given radial variations characteristic on treat surface.

31. equipment as claimed in claim 30, wherein said electrostatic shield arrangement are configured on described treat surface to produce than the given radial variations characteristic radial variations characteristic adjusted of constant more.

32. equipment as claimed in claim 30, wherein said inductively coupled plasma source defines symmetry axis, and described electrostatic shield arrangement comprises at least side wall arrangement it has the shape that extends through about the radius of described symmetry axis.

33. equipment as claimed in claim 32, wherein said electrostatic shield arrangement forms the groove setting that comprises adjustment, its adjustment groove by a plurality of elongations forms, its each be included in the length that extends through the part of described at least radius in the described sidewall, and its each comprise at least in part and to be used to produce described adjustment radial variations characteristic along the width of described length variations.

34. equipment as claimed in claim 32, wherein said adjustable electrostatic shield arrangement are whole at least to be tepee structure.

35. equipment as claimed in claim 32, wherein said adjustable electrostatic shield arrangement are whole at least is that frustoconical is constructed.

36. equipment as claimed in claim 32, wherein said adjustable electrostatic shield arrangement are whole at least is that cheese is constructed.

37. comprising, equipment as claimed in claim 32, wherein said adjustable electrostatic shield arrangement is set to the tabular upper surface that intersects with described symmetry axis.

38. equipment as claimed in claim 32, thereby wherein said electrostatic shield arrangement comprises the screen parts and the second outer screen parts at least the first, the screen parts limit first aperture pattern and described outer screen parts limit second aperture pattern in described, and shield parts covers outward and shield near the parts outside, and support inside and outside screen parts and be used to rotate relative to one another, the aperture pattern of winning is cooperated with the mode of second aperture pattern according to the scope that described adjustment radial variations characteristic is provided on described treat surface.

39. equipment as claimed in claim 38 comprises being used for responding to and adjusts the radial variations characteristic and be used to respond the influence value of adjusting the radial variations characteristic and the swivel arrangement of one of screen parts and outer screen parts in rotating.

40. equipment as claimed in claim 38, wherein said electrostatic shield arrangement is constructed so that the screen parts all are the structure of frustoconical with outer screen parts in each, screen sidewall and the described outer parts that shield comprised outer screen sidewall in described interior screen parts comprised, it is adjacent one another are with outer screen sidewall to shield sidewall in making.

41. equipment as claimed in claim 32, wherein said electrostatic shield arrangement comprises at least the first screen parts and the second screen parts, the described first screen parts limit first aperture pattern, and support the described second screen parts, be used for moving relative to the first screen parts linearity according to the mode of the scope that described adjustment radial variations characteristic is provided on described treat surface.

42. equipment as claimed in claim 41, the wherein said first screen parts are the frustoconical structure with narrow end, support the described second screen parts be used for towards or move away from the narrow end of the first screen parts.

43. equipment as claimed in claim 42, wherein said narrow end is formed with through hole, and the described second screen parts towards or move away from described through hole.

44. equipment as claimed in claim 42, wherein the frustoconical structure of the first screen parts comprises circular cone sidewall with upper peripheral edge and the roof with outer peripheral edges of the upper peripheral edge that is connected in the circular cone sidewall.

45. cooperating, equipment as claimed in claim 44, wherein said circular cone sidewall and described roof limits according to the whole aperture pattern of successive mode from the circular cone sidewall to roof.

46. equipment as claimed in claim 45, wherein said whole aperture pattern forms the arrangement along circumference of wedged hole, its each be defined as base edge and the summit in described roof that has in the circular cone sidewall.

47. equipment as claimed in claim 32, wherein said electrostatic shield arrangement comprises at least the first screen parts and the second screen parts, described first the screen parts limit first aperture pattern and described second the screen parts limit second aperture pattern, and at the described second screen parts of the first screen parts outside support, be used for moving about symmetry axis and with respect to the first screen parts rotation, this rotation is moved according to the mode that produces the scope of described adjustment radial variations characteristic by making the relative first screen parts rotation of the second screen parts on described treat surface.

48. equipment as claimed in claim 47, the wherein said first screen parts are to have the circular cone sidewall and by the frustoconical structure of the narrow end of upper surface sealing, and described circular cone sidewall and described upper surface cooperate and limit described first aperture pattern for by a plurality of spaced apertures of successive mode from the circular cone sidewall to upper surface, and the described second screen parts form and comprise the major surfaces that becomes disposed in opposing relation according to the described upper surface with the first screen parts, described major surfaces is limited with a plurality of grooves, as second aperture pattern, with the described spaced apertures complementation that is limited in the first screen parts upper surface, thereby the rotation of the relative first screen parts of the second screen parts produces described adjustment radial variations characteristic.

49. equipment as claimed in claim 48, wherein said hole and described groove are configured to wedge shape, making screen each hole in the parts of winning comprise base edge in the circular cone sidewall and the summit in the described upper surface.

50. equipment as claimed in claim 48, comprise that thereby forming the described second screen parts comprises extending out from the outermost edge of described major surfaces and become the train of dress of opposed relationship with the described circular cone sidewall of the first screen parts, and at least a portion of described second aperture pattern is limited in the described train of dress.

51. equipment as claimed in claim 28 comprises and uses semiconductor wafer as described process object.

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