CN1792552A - System and method for identifying changing of workpiece parameter - Google Patents

System and method for identifying changing of workpiece parameter Download PDF

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Publication number
CN1792552A
CN1792552A CNA2005101246809A CN200510124680A CN1792552A CN 1792552 A CN1792552 A CN 1792552A CN A2005101246809 A CNA2005101246809 A CN A2005101246809A CN 200510124680 A CN200510124680 A CN 200510124680A CN 1792552 A CN1792552 A CN 1792552A
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time
derivative
signal processing
standard
signal
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欧格内·J·奥苏利文
绍姆·S·伯诺斯
曾伟志
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International Business Machines Corp
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International Business Machines Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A signal processing system has the detected mechanical, chemical, optical, electrical, or thermal signals generated during chemical-mechanical polishing (CMP) process collected, analyzed and differentiated with respect to time in-situ, in order to reveal the different stages during CMP for process control and end-pointing purposes. This control and/or end-pointing scheme may be used to detect the interface between two material layers sharing similar properties such as those of low-k dielectric stacks for semiconductor applications.

Description

The system and method that identification workpiece parameter changes
Technical field
Technical field of the present invention is the chemically mechanical polishing of the chemically mechanical polishing of material, especially IC wafer.
Background technology
Since it occurred, chemically mechanical polishing or complanation (Chemical-mechanicalpolishing or planarization (CMP)) had just become the treatment technology of the ability that is used for the IC manufacturing.Realize that in manufacturing environment CMP is provided with end point (end-point (EP)) for it before requiring to have the ability to monitor technology and metal below it corrodes the layer that into originally will remove or dielectric.
CMP technology is used to make high speed microprocessor, special IC (ASIC), MEMS (MEMS) and other IC or MEMS device.The present invention proposes the simple and accurate algorithm of a cover and the original physical signalling from the polishing incident is processed into discerns, repeatably, the high-resolution symbol of end point control is provided for CMP technology.
In order to realize this target, most of modern CMP equipment are equipped with sensor, and (for example United States Patent (USP) 5 to come to detect in polishing process thermal signal from wafer or pallet, 196,353), (for example United States Patent (USP) 5,069 for friction signal, 002), optical signal (for example United States Patent (USP) 5,433,651), (for example United States Patent (USP) 5 for vibration signal, 222,329), (for example United States Patent (USP) 6 for the electrochemical signals (for example United States Patent (USP) 5,637,185) or the signal of telecommunication, 072,313).The variation of the amplitude of these signals (below be referred to as judgment signal, because they are used for differentiating correct dwell time) mean from a material layer to another material layer alternately, therefore can be interpreted into the interface that has arrived required end point.But the signal that sends from the interface usually is faint, ambiguous and can't identification, so that end point has been seen by leakage.When relevant material layer had similar thermal characteristics, optical characteristics and mechanical property, the detection of this endpoint signal was just difficult more.
According to the present invention, sensor is appended on the parts of CMP equipment, to detect the variation of in glossing process physics or chemical signal.With such signal collection, amplify and be transferred to controller or computer, to be used for further processing.
The signal that has after the processing of " ending " standard that is used for end of identification point is fed then to polishing machine, to stop glossing.Signal detected and that collect can be: from the signal of variations in temperature in the polishing process, as United States Patent (USP) 5,196,353 (are entitled as Method forControlling a Semiconductor (CMP) Process by Measuring a SurfaceTemperature and Developing a Thermal Image of the Wafer, Gurtej.S.Sandhu etc., transfer Micron Technology, Inc) described, perhaps, as serial United States Patent (USP) 5,597,442 about the detection of pallet variations in temperature, 5,643,050 and 5,647,952 (people such as Chen, it is described to transfer Hsin-chu Industrial Technology Research Institute (Industrial TechnologyResearch Institute of Hsinchu).These signals also can be the signals of telecommunication, as United States Patent (USP) 5,337,015 (is entitled as In-situ Endpoint Detection Method andApparatus for Chemical-mechanical Polishing Using Low AmplitudeInput Voltage, people such as Naftali E.Lustig transfer International Business Machine Corporation (IBM)) described; Or optical signal (for example reflectivity of wafer surface layer), as United States Patent (USP) 6,159,073 (is entitled as Method and Apparatus for Measuring Substrate layer Thicknessduring Chemical Mechanical Polishing, Applied Materials, the Andreas N.Wiswesser of Inc) described; Or platen/carrier change in torque (mechanical signal), as United States Patent (USP) 5,036,015 (is entitled as Method ofEndpoint Detection duringChemical/mechanical Planarization of Semiconductor Wafers, MicronTechnology, people such as the Gurtej.S.Sandhu of Inc) described; Perhaps vibration/acoustic signal, as United States Patent (USP) 5,222,329 (are entitled as Acoustical Method and System forDetecting and Controlling Chemical-mechanical Polishing (CMP) depths into Layers of Conductors, Semiconductors, and DielectricMaterial, Micron Technologies, people such as the Chris C.Yu of Inc.) described.
Although the mathematician recognizes the variation that can discern slope from the first order derivative of curve, what obtainable all CMP equipment used on the market known for inventor all is signal itself, rather than its derivative.
Summary of the invention
A feature of the present invention provides a kind of algorithm, and it can produce signal robust, that be easy to distinguish and think CMP technique initialization end point, to improve technology controlling and process and stability.
A feature of the present invention is with signal collection and is transferred to computer or signal processor,, according to following equation, their intensity (amplitude) is carried out differential with respect to the on-the-spot time (time in-situ) here:
dI/dt＝ε
Wherein, I represents the intensity (size) of detected signal such as temperature, motor current (being directly proportional with moment of torsion), the sound (tonequality), reflectivity, interference (interference), impedance, electric current (for example eddy current) or electric capacity; T is to be the time of unit with the second; ε is an intensity incremental change in time.
A feature of the present invention is when reaching required endpoint signal ε EpThe time, computer sends a command to polishing machine, stops to handle.
Another feature of the present invention is, when arriving relevant interface ε InThe time, computer sends order to polishing machine, before stopping to polish, proceed a period of time polishing (cross polishing, overpolishing), to satisfy the thickness standard of design.
Another feature of the present invention is further to handle the signal of collecting, to be disclosed in the more physical events in the polishing process, with auxiliary detection to required interface.For example, for the purpose that end point is set, can combine with dI/dt, generation and supervisory signal are to the second dervative d of time 2I/dt 2
Description of drawings
The schematic diagram of Fig. 1 illustrates the profile of the structure that just is carried out chemically mechanical polishing.
Fig. 2 provides the schematic diagram of the hardware setting that is used for signal collection described in the present invention and processing scheme.
Fig. 3 is the temperature-time curve of collecting in the CMP process of 200mm Si base semiconductor wafer.Referring to the feature of Fig. 1, in this example, layer 1 is F-TEOS ILD, and layer 2 and layer 3 do not occur.
Fig. 4 is the temperature that generates from Fig. 3 first order derivative with respect to the time.
Fig. 5 is the temperature-time curve of collecting in the CMP of another 200mm semiconductor wafer process.Referring to the feature of Fig. 1, in this example, layer 3 is PECVD SiN of 350 dusts x, the Si of the PECVD base of layer 2is 700 dusts wC xO yH zCMP stops layer, and layer 1 is the low K dielectrics material.Collect curve on the different CMP equipment of same type, although observed the variation of some curvature on these curves, they seem equivocal, can not clearly be identified as SiN xAnd Si wC xO yH zStop the interface between the layer.In addition, very big variation is arranged between distinct device.
Fig. 6 is the temperature that generates from Fig. 5 curve with respect to the first order derivative of time.
The specific embodiment
See Fig. 1, semiconductor structure has first dielectric layer 1 and hard mask/CMP polishing stop layer 2 and 3.Interface between layer 3 and the layer 2 is the interface of wanting detected or being set as halt.Depend on purposes, filler can be metal or dielectric.
What the present invention is directed to is to detect the CMP end point when the layer to materials similar chemically polishes, described similar material layer for example comprises singly to be inlayed or first dielectric of dual damascene thickness (multilayer of etching stopping layer that perhaps comprises embedding is dielectric laminated), and the chemical vapor deposition that strengthens of the multilayer of spin-on on first dielectric layer (spin-on) or plasma (plasma-enhanced chemically vapor deposited, PECVD) CMP stops layer (perhaps " cap layer " (a cap layer)).First dielectric layer can be made up of following substances: SiLK TM, GX-3 TM, porous SiLK (TM), GX -3p (TM), Black Diamond TM, NCS TMPerhaps other low K dielectrics material non-porous or porous.CMP stops layer and can be made up of a kind of of following material or their combination: TEOS oxide, silane oxide, SiN x, BLok TM, N-BLok TM, the Si of PECVD base wC xO yH zDielectric substance, AP 6000 TM, HOSP TM, HOSP BESt TM, Ensemble TMEtch Stop (etching stopping layer), Ensemble TMHard Mask (hard mask), hydrogen silsesquioxanes (hydridosilsesquioxanes), hydrogenation-organic sesqui siloxane copolymer (hydrido-organosilsesquioxanes copolymers), siloxanes, silsesquioxane or other spin coating or CVD material.
Described substrate can comprise electronic device, for example transistor or conductor element array.According to the present invention, can on substrate, form by filling oxide, liner oxide and SiNx CMP and stop the fleet plough groove isolation structure that layer constitutes, use the tungsten plug structure (tungstenplug structure) of TiN/Ti lining, perhaps the interconnection structure of forming by low K dielectrics and Cu line.Traditional CMP end point algorithm can require to collect from the signal of interface emission during 2 polishing downwards from layer 3 to layer in structure.
Fig. 2 illustrates the schematic diagram according to CMP of the present invention system.Square frame 100 is represented CMP equipment.Illustrate four kinds of possible sensor detection positions on the CMP equipment here: 1) sensor is embedded into carrier; 2) fixing point on the sensor monitoring pallet; 3) sensor is embedded in platen or the pallet, and perhaps sensor utilizes motor parameter, such as the electric current of motor absorption.Signal is collected and is transferred to computer or signal processor 150 is further analyzed.
Calculate single order (perhaps more high-order) derivative.For the purpose that monitors, provide ε-t curve at once.On this ε-t curve different peak mark the intensity of above-mentioned signal when change, thereby corresponding to the variation of the interface two layers of material characteristic between two-layer.
See Fig. 3 and Fig. 4 or Fig. 5 and Fig. 6, according to the present invention, the original temperature curve is handled and with respect to time diffusion after, can obtain definition, accuracy and reliability and improve many signals.
Fig. 3 illustrates two the classical curves of temperature to the time.They be in polishing process two groups different be that the downforce (down force (DF)) and the back pressure (backpressure (BP)) of unit generates down with psi.The beginning of the polishing of lining (4) has clearly displayed, but end point is not clear.The knee shape position of the curve of below is apparent in view, and top curve is then so unobvious.
In this example, polished structure only comprises a dielectric layer: layer 1, it is TEOS (F-TEOS) oxide that PECVD mixes fluorine.In this example, there are not layer 3 and layer 2.Like this, the interface that detect is exactly lining/F-TEOS interface.The temperature that monitors on pallet does not show the end that obvious characteristics can be identified as the purpose that is used for definite end point that arrives the lining polishing.
Fig. 4 illustrates the first derivative of temperature, and it is many that lining end point wherein manifests clearly.In this example, the amount of dT/dt is represented the transient temperature rate of change in the polishing process.In case lining polishing beginning, dT/dt curve promptly arrive a peak (point 1), drop to a paddy (point 2) afterwards, it has partly been removed corresponding to lining, the point that underlying bed 1 begins to expose.This curve rises again, arrives second peak (point 3), drops to a little 4 at last, and here rate temperature change dT/dt remains in 0 backward, the stage of polishing corresponding to individual layer (layer 1).In graphic object lesson, just in the example at the interface between lining (4) and the layer 1, this interface is positioned at somewhere between a little 2 (end of lining polishing) and the point 4 (beginning of ILD 1 polishing).In order to ensure removing lining fully, putting 4 in actual applications is relevant end point.Because the dT/dt curve keeps smooth after point 4, the end point of catching point 4 settles the standard and can be defined as: rate of temperature change remains 0 in a period of time, temperature remains on below certain finite value (near 0) the second dervative of time:
At Δ t=10 in second | dT/dt|≤m and | d 2T/dt 2|≤n equation (1)
Wherein m is | the cutoff of dT/dt| (for example being 0.5 in this example), n be | and d 2T/dt 2| cutoff (for example being 0.05 in this example), Δ t is window detection time.
According to the present invention, finish point value based on the empirical data regulation, when reaching this value, stop polishing.
Will describe in detail as following, dT/dt-t curve among Fig. 4 and Fig. 6 has disclosed and can be identified as characteristic peak as the required interface of end point by free burial ground for the destitute undoubtedly.By detecting the interface, can control and adjust the thickness of layer 2, to satisfy required device performance requirement from characteristic peak.
Fig. 5 and Fig. 6 have provided more difficult situation.With same structure shown in Figure 1 in, write down one group of 6 curve.In this example, there are layer 3 and layer 2, wish that the interface of location is layer 3-layer 2 interface.
Illustrate temperature curve in Fig. 5, shown that four curves flock together, two outside curves significantly depart from, and this is common situation.
Be easy to see that this situation is not suitable for temperature as discriminant parameter, because " knee " do not seen easily in curve.
Fig. 6 illustrates the first derivative of the temperature of some curve among Fig. 5, has wherein manifested more structural.Be similar to Fig. 4, in the lining polishing process, the dT/dt curve at first arrives the 1st peak, drop to then corresponding to the part of lining remove and following dielectric (layers 3, be SiN in this example x) the paddy of exposure.After being raised to second peak (point 3) again, quickly fall to the platform (point 4) of beginning SiNx polishing.At last, work as Si wC xO yH zCMP stops layer (layer 2), and when finally coming out, curve climbs once more.Depend on the device performance requirement, the end point that detect can be set to the interface between lining and the SiNx, the point 4 on the dT/dt curve just, so examination criteria can be defined as:
At Δ t=10 in second | dT/dt|≤u and | d 2T/dt 2|≤v equation (2)
Wherein u is | the cutoff of dT/dt| (for example being 1.5 in this example), v be | and d 2T/dt 2| cutoff (for example being 0.3 in this example), Δ t is window detection time.
In another example, SiNx and Si wC xO yH zThe interface that stops between the layer (based on Fig. 1, being respectively layer 3 and layer 2 for example) can be the interface (end point) that hope will detect.In this example, point 5 is end point.This point can reach like this: at first enable shown in above-mentioned equation (2) standard of catching SiNx, enable another standard then, identify that preset time (30 seconds) is afterwards afterwards at first detecting a little 4 | d 2T/dt 2| rise to the situation more than the particular value (being 0.3) in this example.
Invention has been described with regard to single preferred implementation above.Those of ordinary skill in the art will appreciate that, in the essential scope of claims, and can accomplished in various ways the present invention.

Claims (20)

1. be used to discern the system that the workpiece parameter changes, comprise:
The sensor that is used for the judgment signal of the described parameter of sensing;
The signal processing unit that be connected to described sensor, can carry out real time signal processing, described real time signal processing comprises: calculate at least one order derivative of described judgment signal with respect to the time; And
Comparison module in the described signal processing unit is used for described at least one order derivative is compared with standard.
2. the system as claimed in claim 1, wherein, described signal processing unit calculates the second dervative with respect to the time of described judgment signal.
3. the system as claimed in claim 1, wherein, described parameter is the thickness that is deposited on the lip-deep film of described workpiece.
4. the system as claimed in claim 1, wherein, described sensor is connected to chemical-mechanical polishing system.
5. system as claimed in claim 4, wherein, described chemical-mechanical polishing system is used to remove the ground floor on the described workpiece, and stops the removal of material after described ground floor is removed, the interface between the second layer under the described ground floor of described like this sensor sensing and this ground floor.
6. system as claimed in claim 4, wherein, described standard is a fixed value of the first derivative of described judgment signal.
7. system as claimed in claim 4, wherein, described first dielectric layer is made up of the material that is selected from following material: SiLK TM, GX-3 TM, porous SiLK (TM), GX-3p (TM), JSR LKD 5109 TM, JSR LKD 5130 TM, Black Diamond TM, NCS TM, porous spin coating or PECVD Si wC xO yH zPerhaps other low k's or the porous low k dielectric substance.
8. system as claimed in claim 7, wherein, described PEVCD or spin coating CMP protective layer are formed by being selected from a kind of of following material: TEOS oxide, silane oxide, SiN x, BLok TM, N-BLok TM, the PECVD base Si wC xO yH zDielectric substance, AP6000 TM, HOSP TM, HOSP BESt TM, Ensemble TMEtching stops material, Ensemble TMHard mask, hydrogen silsesquioxanes, hydrogenation-organic sesqui siloxane copolymer, siloxanes, silsesquioxane or other spin coating or CVD material, the perhaps combination of above-mentioned material.
9. system as claimed in claim 4, wherein, described standard be one section detection time the above first derivative amplitude less than first reference value, and between described detection period, be lower than second a reference value with respect to the amplitude of the second dervative of time.
10. be used to discern the method that the workpiece parameter changes, comprise:
Be provided for the sensor of the judgment signal of the described parameter of sensing;
The signal processing unit that provide and be connected to described sensor, can carry out real time signal processing, described real time signal processing comprises: calculate at least one order derivative of described judgment signal with respect to the time; And
Comparison module in the described signal processing unit is used for described at least one order derivative is compared with standard, comprises the following steps:
Calculate the first derivative of described judgment signal with respect to the time;
The currency of more described first derivative and described standard; And
When satisfying described standard, generate output signal.
11. method as claimed in claim 10, wherein, described signal processing unit calculates the second dervative with respect to the time of described judgment signal.
12. method as claimed in claim 10, wherein, described parameter is the thickness that is deposited on the lip-deep film of described workpiece.
13. method as claimed in claim 10, wherein, described sensor is connected to chemical-mechanical polishing system.
14. method as claimed in claim 13, wherein, described chemical-mechanical polishing system is used to remove the ground floor on the described workpiece, and stops the removal of material after described ground floor is removed, the interface between the second layer under the described ground floor of described like this sensor sensing and this ground floor.
15. method as claimed in claim 13, wherein, described standard is a fixed value of the first derivative of described judgment signal.
16. method as claimed in claim 14, wherein, described standard is a fixed value of the first derivative of described judgment signal.
17. method as claimed in claim 13, wherein, described standard be for one section detection time described first derivative amplitude less than first reference value, and the amplitude with respect to the second dervative of time is lower than second a reference value between described detection period.
18. method as claimed in claim 14, wherein, described standard be for one section detection time described first derivative amplitude less than first reference value, and the amplitude with respect to the second dervative of time is lower than second a reference value between described detection period.
19. method as claimed in claim 13, wherein, described first dielectric layer is made up of the material that is selected from following material: SiLK TM, GX-3 TM, porous SiLK (TM), GX-3p (TM), JSR LKD 5109 TM, JSR LKD 5130 TM, Black Diamond TM, NCS TM, porous spin coating or PECVD Si wC xO yH zPerhaps other low k's or the porous low k dielectric substance.
20. method as claimed in claim 19, wherein, described PEVCD or spin coating CMP protective layer are formed by being selected from a kind of of following material: TEOS oxide, silane oxide, SiN x, BLok TM, N-BLok TM, the PECVD base Si wC xO yH zDielectric substance, AP 6000 TM, HOSP TM, HOSP BESt TM, Ensemble TMEtching stops material, Ensemble TMHard mask, hydrogen silsesquioxanes, hydrogenation-organic sesqui siloxane copolymer, siloxanes, silsesquioxane or other spin coating or CVD material, the perhaps combination of above-mentioned material.
CNA2005101246809A 2004-11-17 2005-11-14 System and method for identifying changing of workpiece parameter Pending CN1792552A (en)

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US10/904,586 2004-11-17

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CN101456151B (en) * 2007-12-13 2013-04-17 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing and end-point detection method thereof
CN104897296A (en) * 2015-06-13 2015-09-09 广东工业大学 Temperature detection device of polishing interface and utilization of temperature signals in chemically mechanical polishing process
CN114952597A (en) * 2022-05-31 2022-08-30 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection

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CN114952597A (en) * 2022-05-31 2022-08-30 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection
CN114952597B (en) * 2022-05-31 2023-10-20 杭州众硅电子科技有限公司 Acquisition method and system for chemical mechanical planarization white light end point detection

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