CN1786828A

CN1786828A - Substrate processing apparatus and substrate processing method

Info

Publication number: CN1786828A
Application number: CN 200510129566
Authority: CN
Inventors: 安田周一; 金冈雅; 金山幸司; 宫城聪; 茂森和士; 浅野彻; 鸟山幸夫; 田口隆志; 三桥毅; 奥村刚
Original assignee: Dainippon Screen Manufacturing Co Ltd
Priority date: 2004-12-06
Filing date: 2005-12-06
Publication date: 2006-06-14
Anticipated expiration: 2025-12-06
Also published as: CN100520594C

Abstract

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a washing/development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. A resist film is formed on a substrate by the resist film processing block. The substrate is washed and dried by the washing processing unit in the washing/development processing block before the substrate is subjected to the exposure processing by the exposure device.

Description

Substrate board treatment and substrate processing method using same

Technical field

The present invention relates to a kind of substrate board treatment and substrate processing method using same that substrate is handled.

Background technology

For semiconductor substrate, base plate for liquid crystal display device, plasma display are carried out various processing with substrate, disk with the various substrates of substrate, optomagnetic base-board for plate, base board for optical mask etc. with substrate, CD, use substrate board treatment.

In such substrate board treatment, general continuous carries out a plurality of different processing to a substrate.The substrate board treatment that TOHKEMY 2003-324139 communique is put down in writing is made of with processing module, development treatment module and interface module with processing module, etchant resist indexing attachment module, antireflection film.Dispose the exposure device of establishing in addition with substrate board treatment as external device (ED) in mode adjacent to interface module.

In above-mentioned substrate board treatment, the substrate of moving into from the indexing attachment module after antireflection film carries out the formation of antireflection film and etchant resist with processing module with processing module and etchant resist coating is handled, via the interface module conveyance in exposure device.In exposure device, the etchant resist on the substrate is carried out after the exposure-processed, substrate via interface module by conveyance in the development treatment module.By in the development treatment module, the etchant resist on the substrate being carried out after development treatment forms corrosion-resisting pattern, substrate by conveyance to the indexing attachment module.

In recent years, be accompanied by the densification of equipment and highly integrated, the miniaturization of corrosion-resisting pattern becomes important problem.In general exposure device in the past, by with the pattern of groove via the projecting lens reduced projection on substrate, carry out exposure-processed., in such exposure device in the past, because the live width of exposing patterns is by the wavelength decision of the light source of exposure device, so the miniaturization of corrosion-resisting pattern is limited.

Therefore, as the exposure method of the further miniaturization of exposing patterns being proposed immersion method (for example with reference to international the 99/49504th trumpeter's volume that discloses).Disclose in the projection aligner of the 99/49504th trumpeter's volume in the world, full of liquid between projection optical system and substrate can shorten the exposure light wave of substrate surface.Thus, can be with the further miniaturization of exposing patterns.

, disclose in the projection aligner of the 99/49504th trumpeter's volume, under substrate and liquid state of contact, carry out exposure-processed, be dissolved in the liquid so be coated on the part of the composition of the resist on the substrate in the above-mentioned world.The composition that is dissolved into the resist in this liquid remains in the surface of substrate, may become bad reason.

In addition, be dissolved into the lens of the composition pollution exposure device of the resist in the liquid.Thus, may produce the bad and shape defect of size of exposing patterns.

Summary of the invention

The object of the present invention is to provide a kind of composition that can prevent the photosensitive material on the substrate to be dissolved into substrate board treatment and substrate processing method using same in the liquid of exposure device.

(1) substrate board treatment of one aspect of the present invention is the substrate board treatment that disposes in the mode adjacent to exposure device, it has and is used for handling part that substrate is handled, and the junction that is set up and carries out the handing-over of substrate in the mode adjacent to an end of handling part between handling part and exposure device; Handling part comprises: first processing unit that forms the photosensitive film that is made of photosensitive material on substrate; After forming photosensitive film and before carrying out exposure-processed, carry out second processing unit of the carrying out washing treatment of substrate by exposure device by first processing unit; After carrying out exposure-processed, substrate is carried out the 3rd processing unit of development treatment by exposure device.

In this substrate board treatment, in first processing unit, on substrate, form the photosensitive film that constitutes by photosensitive material.Then, in second processing unit, carry out the carrying out washing treatment of substrate.Then, substrate by the junction from handling part by conveyance to exposure device, in exposure device, substrate is carried out exposure-processed.Substrate after the exposure-processed by the junction from the exposure device conveyance to handling part, in the 3rd processing unit, substrate is carried out development treatment.

Like this, in exposure device, carry out in second processing unit, carrying out the carrying out washing treatment of substrate before the exposure-processed.Thus, a part is formed on the composition of the photosensitive film on the substrate in first processing unit dissolved, and rinse out.At this moment, even carry out exposure-processed under substrate and liquid state of contact in exposure-processed, the composition of the photosensitive material on the substrate also can dissolve hardly.Thus, when reducing the pollution in the exposure device, can prevent that also the composition of photosensitive material from remaining in the surface of substrate.Consequently, it is bad to be reduced in the processing of the substrate that produces in the exposure device.

(2) handling part has: first handles unit, and this first handles that unit comprises first processing unit, first thermal treatment unit that substrate is heat-treated and the first conveyance unit of conveyance substrate; With second handle unit, this second handles that unit comprises second processing unit, the 3rd processing unit, second thermal treatment unit that substrate is heat-treated and the second conveyance unit of conveyance substrate.

At this moment, handle in the unit, on substrate, form photosensitive film by first processing unit first.Then, substrate by the first conveyance unit conveyance to first thermal treatment unit, the thermal treatment of in first thermal treatment unit, substrate being stipulated.Then, substrate is by the processing unit of the first conveyance unit conveyance to adjacent other.

Then, handle in the unit, carry out the carrying out washing treatment of substrate by second processing unit second.Then, substrate by the junction from the handling part conveyance to exposure device, in exposure device, substrate is carried out exposure-processed.Substrate after the exposure-processed by the junction from the exposure device conveyance to handling part.

Then, handle in the unit, carry out the development treatment of substrate by the 3rd processing unit second.Then, substrate by the second conveyance unit conveyance to second thermal treatment unit, the thermal treatment of in second thermal treatment unit, substrate being stipulated.Then, substrate is by the processing unit of the second conveyance unit conveyance to adjacent other.

In this substrate board treatment, handle the carrying out washing treatment of the substrate before carrying out exposure-processed in the unit and the development treatment of the substrate after the exposure-processed second.Promptly, in existing substrate board treatment with the first and the 3rd processing unit, by append second processing unit to the processing unit of containing the 3rd processing unit, can handle the carrying out washing treatment of the substrate before carrying out exposure-processed in the unit and the development treatment of the substrate after the exposure-processed at one.Its result can reduce cost and not increase area occupied, and the processing that is reduced in the substrate that produces in the exposure device is bad.

(3) second handle unit can dispose adjacent to the mode of junction.At this moment, can before or after exposure-processed, carry out the carrying out washing treatment and the development treatment of substrate immediately.Thus, with substrate from second handle unit when the exposure device conveyance and from exposure device when second handles the unit conveyance, can prevent that dust etc. in the environment is attached on the substrate.Its result, the processing of the substrate that produces in the time of can being reduced in exposure-processed and during development treatment is bad.

(4) handling part also has the 3rd and handles unit, its be included in by first processing unit forms that photosensitive film forms that the of antireflection film is managed the unit everywhere before on substrate, the 3rd thermal treatment unit that substrate is heat-treated and the 3rd conveyance unit of conveyance substrate.At this moment, on substrate, form antireflection film, can reduce the standing wave and the halation that when exposure-processed, produce owing to manage the unit everywhere by the.The processing of the substrate that produces in the time of thus, can being reduced in exposure-processed is bad.

(5) also can have substrate and move into the portion of taking out of, it disposes in the mode adjacent with other end of handling part, carries out moving into substrate and taking out of substrate from handling part to handling part, and the 3rd handles unit can dispose adjacent to the mode that substrate is moved into the portion of taking out of.

At this moment, can carry out in first order of handling unit formation photosensitive film afterwards according to after handling part conveyance substrate, handling unit formation antireflection film the 3rd immediately.Thus, the formation of antireflection film on substrate and photosensitive film can successfully be carried out.

(6) junction can comprise substrate is carried out the 5th processing unit of predetermined processing and the loading part of temporary transient mounting substrate; The 4th conveyance unit of conveyance substrate between handling part, the 5th processing unit and loading part, and between loading part and exposure device the 5th conveyance unit of conveyance substrate.

At this moment, substrate by the 4th conveyance unit from handling part conveyance to the five processing units.After the 5th processing unit carries out predetermined process to substrate, substrate by the 4th conveyance unit conveyance to loading part.Then, substrate by the 5th conveyance unit from the loading part conveyance to exposure device.After exposure device carries out exposure-processed to substrate, substrate by the 5th conveyance unit from the exposure device conveyance to loading part.Then, substrate by the 4th conveyance unit from the loading part conveyance to handling part.

Like this, dispose the 5th processing unit in the junction, carry out the conveyance of substrate, thereby the area occupied that can need not to increase substrate board treatment can append contents processing by two conveyance unit.

(7) the 4th conveyance unit have first maintaining part and second maintaining part that keeps substrate; When the 4th conveyance unit, substrate before conveyance is carried out exposure-processed by exposure device, keep substrate, during substrate conveyance is carried out exposure-processed by exposure device after, by second maintaining part maintenance substrate by first maintaining part; The 5th conveyance unit has the 3rd maintaining part and the 4th maintaining part that keeps substrate; When the 5th conveyance unit, substrate before conveyance is carried out exposure-processed by exposure device, keep substrate, during substrate conveyance is carried out exposure-processed by exposure device after, by the 4th maintaining part maintenance substrate by the 3rd maintaining part.

At this moment, use during substrate that first maintaining part and the liquid of the 3rd maintaining part before the conveyance exposure-processed do not adhere to, second maintaining part and the 4th maintaining part after the conveyance exposure-processed be attached with the substrate of liquid the time use.Therefore, because liquid that can not is attached on first maintaining part and the 3rd maintaining part, so can prevent that liquid is attached on the substrate before the exposure-processed.Thus, can prevent the pollution of adhering to the substrate that causes by dust in the environment etc.Its result can prevent from can worsen the bad generation of processing that grade causes by resolution in exposure device.

(8) second maintaining parts are arranged on the below of first maintaining part, and the 4th maintaining part is arranged on the below of the 3rd maintaining part.At this moment, even the substrate that liquid keeps from second maintaining part and the 4th maintaining part and their falls, on the substrate that liquid also can not keep attached to first maintaining part and the 3rd maintaining part and their.Thus, prevent that reliably liquid is attached on the substrate before the exposure-processed.

(9) the 5th processing units comprise the edge exposure portion of the periphery of exposure base.At this moment, in edge exposure portion the periphery of substrate is carried out exposure-processed.

(10) second processing units can further carry out the dried of substrate after the carrying out washing treatment of substrate.

At this moment, can prevent on the substrate after dust etc. in the environment is attached to washing.In addition, in the time of on the substrate after cleansing solution remains in washing, the one-tenth branch of photosensitive material is dissolved in the residual cleansing solution.Therefore, by at substrate washing back dry substrate, can prevent that the composition of the photosensitive material on the substrate is dissolved in the residual cleansing solution.Thus, can prevent to be coated in the photosensitive film generation shape defect on the substrate reliably, prevent the pollution in the exposure device simultaneously reliably.Its result can prevent reliably that the processing of substrate is bad.

(11) second processing units can have with substrate remain approximate horizontal base plate keeping device, make the rotating driving device of the substrate that keeps by base plate keeping device rotation around perpendicular to the axle of this substrate, to the cleansing solution supply unit of supplying with cleansing solution on the substrate that is held in base plate keeping device and after on substrate, supplying with cleansing solution by the cleansing solution supply unit, the inert gas supply unit of supply inert gas on substrate.

In this second processing unit, by base plate keeping device substrate is remained approximate horizontal, by rotating driving device, substrate perpendicular to this substrate the axle around the rotation.In addition,, on substrate, supply with cleansing solution, next, supply with inert gas by the inert gas supply unit by the cleansing solution supply unit.

At this moment, because supply with cleansing solution on substrate when making substrate rotation, the cleansing solution on the substrate moves and disperses to the periphery of substrate by centrifugal force.Therefore, can prevent that the composition that is dissolved in the photosensitive material in the cleansing solution from remaining on the substrate.In addition, because when making the substrate rotation, on substrate, supply with inert gas, so after the substrate washing, can get rid of the cleansing solution that remains on the substrate efficiently.Thus, when preventing the composition of residual photosensitive material on substrate reliably, dry substrate reliably.Therefore, can prevent reliably that with the substrate after the washing composition of the photosensitive material on the substrate is dissolved into again in the cleansing solution that remains on the substrate in during the exposure device conveyance.Its result can prevent to apply the bad generation of the shape that is formed on the photosensitive film on the substrate reliably, prevents the pollution in the exposure device simultaneously reliably.

(12) inert gas supply unit can be supplied with inert gas so that the cleansing solution that is supplied on the substrate by the cleansing solution supply unit moves the mode that above-mentioned cleansing solution is got rid of from substrate laterally from the central part on the substrate.

At this moment, remain in the central part on the substrate, so can prevent from reliably dry vestige to take place on the surface of substrate because can prevent cleansing solution.In addition, can prevent reliably that with the substrate after the washing composition of photosensitive material is dissolved into again in the cleansing solution that remains on the substrate in during the exposure device conveyance.Thus, can prevent reliably that the processing of substrate is bad.

(13) second processing units can also possess the washing fluid supply unit, and this washing fluid supply unit and before supplying with inert gas by the inert gas supply unit, is supplied with washing fluid on substrate after supplying with cleansing solution by the cleansing solution supply unit.

At this moment, because can wash out cleansing solution reliably, remain on the substrate so can prevent to be dissolved in the composition of the photosensitive material in the cleansing solution more reliably by washing fluid.

(14) inert gas supply unit can be supplied with inert gas so that the washing fluid that is supplied on the substrate by the washing fluid supply unit moves the mode that above-mentioned washing fluid is excluded from substrate laterally from the central part on the substrate.

At this moment, because can prevent the residual washing fluid of central part on substrate, so can prevent from reliably dry vestige to take place on the surface of substrate.In addition, can prevent reliably that with the substrate after the washing composition of the photosensitive material on the substrate is dissolved into again in the washing fluid that remains on the substrate in during the exposure device conveyance.Thus, can prevent reliably that the processing of substrate is bad.

(15) second processing units also can be by supplying with the carrying out washing treatment that the fluid-mixing that comprises cleansing solution and gas carries out substrate from fluid tip to substrate.

At this moment, the fluid-mixing that sprays from fluid tip contains the fine droplets of cleansing solution, and is therefore concavo-convex even if substrate surface has, and also can remove dirt attached to substrate surface by this fine droplets.In addition,, also can remove the dirt of substrate surface, therefore, can remove the dirt of substrate surface reliably by the fine droplets of cleansing solution even be formed under easy the to be moist low situation of the film on the substrate.

Thereby before exposure-processed, even the distillations such as solvent of the film that forms on substrate, its sublimate under the situation attached to substrate, in second processing unit, also can be removed this attachment once more reliably.Thus, can prevent the pollution that exposure device is interior reliably.Its result, the processing that can reduce substrate reliably is bad.

In addition, by the flow of adjustments of gas, the washing force in the time of can being easy to regulate the washing substrate.Thereby, have at the film that forms on the substrate under the situation of character of rapid wear, by reducing the breakage that washing force can prevent the film on the substrate.In addition, under the firm situation of the dirt of substrate surface, can remove the dirt of substrate surface reliably by strengthening washing force.Like this, by regulating washing force, can wash substrate reliably in the breakage of the film on preventing substrate according to the character of the film on the substrate and the degree of dirt.

(16) gas also can be inert gas.At this moment, even under the situation that soup used as cleansing solution, also can prevent influence, can remove the dirt of substrate surface simultaneously more reliably to being formed on the film on the substrate and cleansing solution being brought chemical.

(17) second processing units also can carry out the dried of substrate again after the carrying out washing treatment of substrate.

At this moment, can prevent that dust etc. in the environment is attached on the substrate after the carrying out washing treatment.In addition, if cleansing solution remains on the substrate after the carrying out washing treatment, then the one-tenth branch of photosensitive film is dissolved in the residual cleansing solution sometimes.Therefore, by dry substrate after the washing of substrate, can prevent that the composition of the photosensitive film on the substrate is dissolved in the cleansing solution that remains on the substrate.Thus, can prevent to be formed on the photosensitive film generation shape defect on the substrate reliably, prevent the pollution in the exposure device simultaneously reliably.Its result can prevent reliably that the processing of substrate is bad.

(18) second processing units also can comprise the inert gas supply unit, and it is by supplying with the dried that inert gas carries out substrate on substrate.At this moment, owing to use inert gas, can prevent to dry substrate reliably when being formed on the influence that film on the substrate brings chemical.

(19) fluid tip also can have the function of inert gas supply unit.At this moment, supply with inert gas to substrate, and carry out the dried of substrate from fluid tip.Thus, do not need inert gas supply unit and fluid tip are provided with separately respectively.Its result can reliably carry out the washing and the dried of substrate with simple structure.

(20) second processing units can also comprise: with the base plate keeping device of substrate approximate horizontal maintenance; Rotating driving device, it is rotated the substrate that kept by base plate keeping device around perpendicular to the axle of this substrate.

In this second processing unit, by the maintenance of base plate keeping device with the substrate approximate horizontal, by rotating driving device make substrate perpendicular to this substrate the axle around be rotated.In addition, fluid-mixing is supplied on the substrate, then, supply with inert gas by the inert gas supply unit by fluid tip.

At this moment, in the time of owing to rotary plate fluid-mixing is supplied on the substrate, so the fluid-mixing on the substrate moves the periphery that is distributed to substrate by centrifugal force.Therefore, the attachment that can prevent dust of removing by fluid-mixing etc. reliably remains on the substrate.In addition, in the time of owing to rotary plate inert gas is supplied on the substrate, so can efficiently get rid of the fluid-mixing that after the washing of substrate, remains on the substrate.Thus, can prevent reliably that the attachment of dust etc. from remaining on the substrate, simultaneously dry substrate reliably.Its result can prevent reliably that the processing of substrate is bad.

(21) second processing units also can be supplied with inert gas so that the fluid-mixing that supplies on the substrate from fluid tip moves the mode that above-mentioned fluid-mixing is got rid of from substrate laterally from the central part on the substrate.

At this moment, owing to can prevent that fluid-mixing from remaining in the central part on the substrate, so can prevent from reliably to produce dry vestige on the surface of substrate.Thus, can prevent reliably that the processing of substrate is bad.

(22) second processing units also can also comprise the washing fluid supply unit, and it has been after fluid tip has been supplied with fluid-mixing, and before supplying with inert gas by the inert gas supply unit, supply with washing fluid on substrate.

At this moment, can wash fluid-mixing reliably, remain on the substrate so can prevent the attachment of dust etc. more reliably by washing fluid.

(23) fluid tip also can have the function of washing fluid supply unit.At this moment, washing fluid supplies on the substrate from fluid tip.Thus, do not need washing fluid supply unit and fluid tip are provided with respectively.Its result just can carry out the washing and the dried of substrate reliably with simple structure.

(24) second processing units also can be supplied with inert gas so that the washing fluid that is supplied on the substrate by the washing fluid supply unit moves the mode that above-mentioned washing fluid is got rid of from substrate laterally from the central part on the substrate.

At this moment, owing to can prevent that washing fluid from remaining in the central part on the substrate, so can prevent from reliably to produce dry vestige on the surface of substrate.Thus, can prevent reliably that the processing of substrate is bad.

(25) fluid tip also can have: the liquid flow path of circulating liquid; The gas flow path of circulated gases; Be communicated with the also liquid ejection outlet of opening with liquid flow path; Be communicated with gas flow path when being arranged near liquid ejection outlet and the gas ejection ports of opening.

At this moment, spray in the liquid flow path circulation and from liquid ejection outlet by cleansing solution, gas sprays in the gas flow path circulation and from gas ejection ports, thereby can be at the external mix cleansing solution and the gas of fluid tip.Thus, can generate vaporific fluid-mixing.

Like this, fluid-mixing generates by mixing, washing liquid and gas in the outside of fluid tip.Therefore, do not need to be provided for the space of mixing, washing liquid and gas in the inside of fluid tip.Its result, the fluid tip Miniaturizable.

(26) substrate processing method using same according to another aspect of the present invention, be to be configured in mode adjacent to exposure device, have in the substrate board treatment of first processing unit, second processing unit and the 3rd processing unit, the method that substrate is handled, this substrate processing method using same has: before carrying out exposure-processed by exposure device, formed the operation of the photosensitive film that is made of photosensitive material by first processing unit on substrate; After forming photosensitive film, and before carrying out exposure-processed, carry out the operation of the carrying out washing treatment of substrate by second processing unit by exposure device by first processing unit; After carrying out exposure-processed, substrate is carried out the operation of development treatment by the 3rd processing unit by exposure device.

In this substrate processing method using same, in first processing unit, on substrate, form after the photosensitive film that constitutes by photosensitive material, in second processing unit, carry out the carrying out washing treatment of substrate.Then, in exposure device, substrate is carried out exposure-processed.After the exposure-processed, carry out the development treatment of substrate by the 3rd processing unit.

(27) after the operation of the carrying out washing treatment of carrying out substrate by second processing unit, and, can also have the operation of carrying out the dried of substrate by second processing unit before carrying out exposure-processed by exposure device.

Therefore at this moment, in second processing unit, the dried of the substrate after washing can prevent on the substrate after dust etc. in the environment is attached to washing.In addition, if cleansing solution remains on the substrate after the washing of substrate, then the one-tenth branch of photosensitive material is dissolved in the residual cleansing solution sometimes.Therefore, by dry substrate after the washing of substrate, can prevent that the composition of the photosensitive material on the substrate is dissolved in the cleansing solution that remains on the substrate.Thus, in the generation of the shape defect of the photosensitive film that can prevent from reliably on substrate, to apply, can prevent pollution in the exposure device reliably.Its result can prevent reliably that the processing of substrate is bad.

According to the present invention, in exposure device, carry out in second processing unit, carrying out before the exposure-processed carrying out washing treatment of substrate.At this moment, in exposure device, even carry out exposure-processed under substrate and liquid state of contact, the composition of the photosensitive material on the substrate also can dissolve hardly.Thus, when reducing the pollution in the exposure device, can prevent that also the composition of photosensitive material from remaining in the surface of substrate.Consequently, it is bad to be reduced in the processing of the substrate that produces in the exposure device.

Description of drawings

Fig. 1 is the vertical view of the substrate board treatment that relates to of an embodiment of the invention.

Fig. 2 is the side view from the substrate board treatment of Fig. 1 of+directions X.

Fig. 3 is the side view from the substrate board treatment of Fig. 1 of a directions X.

Fig. 4 is the figure that is used to illustrate the structure of carrying out washing treatment unit.

Fig. 5 A, Fig. 5 B, Fig. 5 C are the figure that is used to illustrate the action of carrying out washing treatment unit.

Fig. 6 is provided with carrying out washing treatment is used the nozzle situation with nozzle and dried synoptic diagram integratedly.

Fig. 7 is the expression dried with other the synoptic diagram of example of nozzle.

Fig. 8 A, Fig. 8 B, Fig. 8 C are used to illustrate the dried of the having used Fig. 7 figure of the drying method of the substrate under the situation of nozzle.

Fig. 9 is the expression dried with other the synoptic diagram of example of nozzle.

Figure 10 is other the synoptic diagram of example of expression carrying out washing treatment unit.

Figure 11 is the figure that is used to illustrate the drying method of the substrate under the situation of the carrying out washing treatment unit that has used Figure 10.

Figure 12 is used for the specification interface structure of transport mechanism and the figure of action.

Figure 13 is that expression is used to wash and the longitudinal sectional drawing of an example of the inner structure of 2 fluid tips of dried.

Figure 14 A, Figure 14 B, Figure 14 C are used to illustrate the washing of the substrate under the situation of 2 fluid tips that use Figure 13 and the figure of drying method.

Embodiment

Below, at the substrate board treatment that one embodiment of the present invention relates to, use accompanying drawing to describe.In the following description, so-called substrate is meant semiconductor substrate, base plate for liquid crystal display device, plasma display substrate, photomask glass substrate, CD substrate, disk substrate, optomagnetic base-board for plate, base board for optical mask etc.

At each later figure of Fig. 1,, indicate arrow and represent orthogonal directions X, Y direction and Z direction for clear and definite position relation.Directions X and Y direction are vertical mutually in surface level, and the Z direction is equivalent to vertical.In addition, in all directions, the direction of arrow points is made as+direction, its opposite direction is made as-direction.In addition, will be that the sense of rotation at center is made as the θ direction with the Z direction.

As shown in Figure 1, substrate board treatment 500 comprises: indexing attachment module 9, antireflection film processing module 10, etchant resist processing module 11, washing/development treatment module 12 and interface module 13.Dispose exposure device 14 in mode adjacent to interface module 13.In exposure device 14, carry out the exposure-processed of substrate W by immersion method.

Below, each indexing attachment module 9, antireflection film are called processing module with processing module 10, etchant resist with processing module 11, washing/development treatment module 12 and interface module 13.

Indexing attachment module 9 comprises the master controller (control part) 30 of the action of controlling each processing module, a plurality of conveyer loading stage 60 and indexing attachment mechanical arm IR.Indexing attachment mechanical arm IR is provided with and is used to join the hand IRH of substrate W.

Antireflection film comprises that with portion 10 antireflection film thermal treatment portion 100,101, antireflection film are with applying the handling part 70 and the first center mechanical arm CR1.Antireflection film with coating handling part 70 across the first center mechanical arm CR1 and antireflection film with thermal treatment portion 100,101 relative to and be provided with.At the first center mechanical arm CR1, upper and lower settings is useful on hand CRH1, the CRH2 of handing-over substrate W.

Use between the processing module 10 in indexing attachment module 9 and antireflection film, be provided with environment and cut off with partition walls 15.In this partition walls 15, closely be provided with up and down and be used for the substrate loading part PASS1, the PASS2 that between indexing attachment module 9 and antireflection film are with processing module 10, carry out the handing-over of substrate W.The substrate loading part PASS1 of upside uses when substrate W is used processing module 10 from 9 conveyances of indexing attachment module to antireflection film, and the substrate loading part PASS2 of downside is using substrate W when antireflection film is used processing module 10 conveyances to indexing attachment module 9.

In addition, be provided with the sensor (not shown) of the optical profile type that has or not that detects substrate W at substrate loading part PASS1, PASS2.Thus, can judge in substrate loading part PASS1, PASS2 whether be mounted with substrate W.In addition, be provided with many supporting pins that fixedly install at substrate loading part PASS1, PASS2.In addition, the sensor of above-mentioned optical profile type and supporting pin are arranged on the described substrate loading part PASS3～PASS10 of back too.

Etchant resist comprises that with processing module 11 etchant resist thermal treatment portion 110,111, etchant resist are with applying the handling part 80 and the second center mechanical arm CR2.Etchant resist with coating handling part 80 across the second center mechanical arm CR2 and etchant resist with thermal treatment portion 110,111 relative to and be provided with.At the second center mechanical arm CR2, upper and lower settings is useful on hand CRH3, the CRH4 of handing-over substrate W.

Use between the processing module 11 with processing module 10 and etchant resist at antireflection film, be provided with the partition walls 16 that environment cuts off usefulness.In this partition walls 16, closely be provided with up and down and be used for the substrate loading part PASS3, the PASS4 that carry out the handing-over of substrate W with processing module 10 and etchant resist between with processing module 11 at antireflection film.The substrate loading part PASS3 of upside is using substrate W with processing module 10 conveyances from antireflection film when etchant resist is used processing module 11, the substrate loading part PASS4 of downside is using substrate W with processing module 11 conveyances from etchant resist when antireflection film is used processing module 10.

Washing/development treatment module 12 comprises developing dries with thermal treatment portion 121, development treatment portion 90, carrying out washing treatment portion 95 and the 3rd center mechanical arm CR3 with thermal treatment portion 120, exposure back.The oven dry of exposure back is adjacent with interface module 13 with thermal treatment portion 121, as described later, has substrate loading part PASS7, PASS8.Development treatment portion 90 and carrying out washing treatment portion 95 use thermal treatment portion 121 relative to setting with development with thermal treatment portion 120 and the oven dry of exposure back across the 3rd center mechanical arm CR3.At the 3rd center mechanical arm CR3, upper and lower settings is useful on hand CRH5, the CRH6 of handing-over substrate W.

Between etchant resist is with processing module 11 and washing/development treatment module 12, be provided with the partition walls 17 that environment cuts off usefulness.In this partition walls 17, closely be provided with substrate loading part PASS5, the PASS6 of the handing-over that is used between etchant resist is with processing module 11 and washing/development treatment module 12, carrying out substrate W up and down.The substrate loading part PASS5 of upside is using substrate W when etchant resist is used processing module 11 conveyances to washing/development treatment module 12, the substrate loading part PASS6 of downside uses when substrate W is used processing module 11 from 12 conveyances of washing/development treatment module to etchant resist.

Interface module 13 comprises the 4th center mechanical arm CR4, buffer store SBF, interface transport mechanism IFR and the EEW of edge exposure portion.In addition, at the downside of the EEW of edge exposure portion, be provided with the RBF of buffer store portion and substrate loading part PASS9, the PASS10 of returning described later.At the 4th center mechanical arm CR4, upper and lower settings is useful on hand CRH7, the CRH8 of handing-over substrate W.

In the substrate board treatment 500 that present embodiment relates to, be set side by side with indexing attachment module 9, antireflection film processing module 10, etchant resist processing module 11, washing/development treatment module 12 and interface module 13 successively along the Y direction.

Fig. 2 is the side view from the substrate board treatment 500 of Fig. 1 of+directions X.

The antireflection film of using processing module 10 at antireflection film is with applying handling part 70 (with reference to Fig. 1), and stacked on top of one another disposes 3 coating element BARC.Each coating element BARC has with flat-hand position absorption and keeps substrate W and the rotary chuck 71 that is rotated and supply with the supply nozzle 72 of the coating liquid of antireflection film to remaining on substrate W on the rotary chuck 71.

The etchant resist of using processing module 11 at etchant resist is with applying handling part 80 (with reference to Fig. 1), and stacked on top of one another disposes 3 coating element RES.Each coating element RES has with flat-hand position absorption and keeps substrate W and the rotary chuck 81 that is rotated and supply with the supply nozzle 82 of the coating liquid of etchant resist to remaining on substrate W on the rotary chuck 81.

In washing/development treatment module 12, stacked on top of one another disposes development treatment portion 90 and dried portion 95.In development treatment portion 90, stacked on top of one another disposes 4 development treatment cells D EV.Each development treatment cells D EV has with flat-hand position absorption and keeps substrate W and the rotary chuck 91 that is rotated and supply with the supply nozzle 92 of developer solution to remaining on substrate W on the rotary chuck 91.

In addition, in carrying out washing treatment portion 95, dispose 1 carrying out washing treatment cell S OAK.In this carrying out washing treatment cell S OAK, carry out washing and the dried of substrate W.About the concrete structure of carrying out washing treatment cell S OAK, narration in the back.

In interface module 13, stacked on top of one another disposes two EEW of edge exposure portion, returns the RBF of buffer store portion and substrate loading part PASS9, PASS10, disposes the 4th center mechanical arm CR4 (with reference to Fig. 1) and interface transport mechanism IFR simultaneously.Each EEW of edge exposure portion has the light illuminator 99 that keeps substrate W and the rotary chuck 98 that is rotated and the periphery that remains on the substrate W on the rotary chuck 98 is exposed with flat-hand position absorption.

Fig. 3 is the side view from the substrate board treatment 500 of-Fig. 1 that directions X is seen.

In the antireflection film thermal treatment portion 100 of antireflection film with processing module 10, stacked on top of one another disposes two 2 cooling units (coldplate) CP, in antireflection film thermal treatment portion 101, stacked on top of one another disposes 4 heating unit (heating plate) HP and 2 cooling unit CP.In addition, in antireflection film thermal treatment portion 100,101, its topmost disposes the local control LC of the temperature of control cooling unit CP and heating unit HP respectively.

In the etchant resist thermal treatment portion 110 of etchant resist with processing module 11, stacked on top of one another disposes 4 cooling unit CP, and in etchant resist thermal treatment portion 111, stacked on top of one another disposes 5 heating unit HP.In addition, in etchant resist thermal treatment portion 110,111, its topmost disposes the local control LC of the temperature of control cooling unit CP and heating unit HP respectively.

Development thermal treatment portion 120 in washing/development treatment module 12, stacked on top of one another disposes 3 heating unit HP and 4 cooling unit CP, oven dry thermal treatment portion 121 after exposure, stacked on top of one another disposes 4 heating unit HP, substrate loading part PASS7, PASS8 and 2 cooling unit CP.In addition, dry with thermal treatment portion 121 after developing with thermal treatment portion 120 and exposure, its topmost disposes the local control LC of the temperature of control cooling unit CP and heating unit HP respectively.

Below, the action of the substrate board treatment 500 that relates at present embodiment describes.

On the conveyer loading stage 60 of indexing attachment module 9, move into the multistage conveyer C that holds many substrate W.Indexing attachment mechanical arm IR uses hand IRH, takes out the untreated substrate W that is contained in the conveyer C.Then, the rotation of edge ± θ direction was moved when indexing attachment mechanical arm IR edge ± directions X moved, and substrate loading part PASS1 is arrived in untreated substrate W transfer.

In the present embodiment, adopt FOUP (front opening unifiedpod: front open type unified standard case) as conveyer C, but be not limited thereto, (StandardMechanical Inter Face: the standard mechanical interface) box maybe will hold substrate W and expose externally airborne OC (open cassette: open box) etc. to the open air also can to use SMIF.Further, at indexing attachment mechanical arm IR, first～the 4th center mechanical arm CR1～CR4 and interface transport mechanism IFR, use the linear motion-type carrying manipulator of the advance and retreat action of carrying out hand respectively with respect to substrate W linear slide, but be not limited thereto, also can use by making joint action come the multi-joint type mechanical arm of the advance and retreat action of carrying out hand of straight line.

The untreated substrate W of transfer to the substrate loading part PASS1, the hand CRH1 with the first center mechanical arm CR1 of processing module 10 receives by antireflection film.The first center mechanical arm CR1 moves into antireflection film with applying handling part 70 by hand CRH1 with substrate W.With applying in the handling part 70, the standing wave and the halation that produce when exposing in order to reduce apply the formation antireflection film by coating element BARC on substrate W at this antireflection film.

Then, the first center mechanical arm CR1 passes through hand CRH2 and takes out the substrate W that coating was handled from antireflection film with coating handling part 70, moves into antireflection film thermal treatment portion 100,101.

Then, the first center mechanical arm CR1 takes out heat treated substrate W from antireflection film with thermal treatment portion 100,101 by hand CRH1, and transfer is to substrate loading part PASS3.

Transfer is received by the hand CRH3 of etchant resist with the second center mechanical arm CR2 of processing module 11 to the substrate W of substrate loading part PASS3.The second center mechanical arm CR2 moves into etchant resist with applying handling part 80 by hand CRH3 with substrate W.This etchant resist with coating handling part 80 in, formed in coating by coating element RES that coating forms etchant resist on the substrate W of antireflection film.

Then, the second center mechanical arm CR2 passes through hand CRH4 and takes out the substrate W that coating was handled from etchant resist with coating handling part 80, and moves etchant resist thermal treatment portion 110,111 to.

Then, the second center mechanical arm CR2 is taken out with thermal treatment portion 110,111 from etchant resist by hand CRH3 and has finished heat treated substrate W, and transfer is to substrate loading part PASS5.

The substrate W of transfer to the substrate loading part PASS5 is received by the hand CRH5 of the 3rd center mechanical arm CR3 of washing/development treatment module 12.The 3rd center mechanical arm CR3 moves into carrying out washing treatment portion 95 by hand CRH5 with substrate W.In this carrying out washing treatment portion 95, carry out carrying out washing treatment and the dried of substrate W as described above by carrying out washing treatment cell S OAK.

Then, the 3rd center mechanical arm CR3 takes out from carrying out washing treatment cell S OAK by the substrate W that hand CRH5 will handle, and transfer is to substrate loading part PASS7.The substrate W of transfer to the substrate loading part PASS7, the hand CRH7 of the upside of the 4th center mechanical arm CR4 by interface module 13 is received.The 4th center mechanical arm CR4 moves into the EEW of edge exposure portion by hand CRH7 with substrate W.In the EEW of this edge exposure portion, the periphery of substrate W is implemented exposure-processed.

Then, the 4th center mechanical arm CR4 takes out from the EEW of edge exposure portion by hand CRH7 and has finished the substrate W that edge exposure is handled.Then, the 4th center mechanical arm CR4 by hand CRH7 with substrate W transfer to substrate loading part PASS9.

The substrate W of transfer to the substrate loading part PASS9 moves into exposure device 14 by interface with the hand H5 of transport mechanism IFR.After in exposure device 14, substrate W having been implemented exposure-processed, interface with transport mechanism IFR by hand H6 with substrate W transfer to PASS10.In addition, about the concrete structure of interface with transport mechanism IFR, narration in the back.

The substrate W of transfer to the substrate loading part PASS10 is received by the hand CRH8 of the downside of the 4th center mechanical arm CR4 of interface module 13.The 4th center mechanical arm CR4 moves into substrate W by hand CRH8 after the exposure of washing/development treatment module 12 oven dry with thermal treatment portion 121.Oven dry is used in the thermal treatment portion 121 after exposure, oven dry (PEB) after substrate W is exposed.Then, the 4th center mechanical arm CR4 takes out substrate W from the back oven dry that exposes with thermal treatment portion 121 by hand CRH8, and transfer is to substrate loading part PASS8.

The substrate W of transfer to the substrate loading part PASS8, the hand CRH6 of the 3rd center mechanical arm CR3 by washing/development treatment module 12 is received.The 3rd center mechanical arm CR3 moves into development treatment portion 90 by hand CRH6 with substrate W.In development treatment portion 90, EV carries out development treatment to substrate W by the development treatment cells D.

Then, the 3rd center mechanical arm CR3 takes out the substrate W that development treatment is crossed by hand CRH5 from development treatment portion 90, moves into and develops with thermal treatment portion 120.

Below, from developing with the substrate W after the 120 taking-up thermal treatments of thermal treatment portion, transfer is to substrate loading part PASS6 by hand CRH6 for the 3rd center mechanical arm CR3.

In addition, because fault etc., in the time of temporarily can not carrying out the development treatment of substrate W in development treatment portion 90, oven dry can temporarily be held substrate W certainly the RBF of the buffer store portion that returns in interface module 13 with in the thermal treatment portion 121 substrate W being implemented after the thermal treatment after exposure.

Transfer to the substrate W of substrate loading part PASS6 by etchant resist with the hand CRH4 of the second center mechanical arm CR2 of processing module 11 transfer to substrate loading part PASS4.The substrate W of transfer to the substrate loading part PASS4 be by the hand CRH2 of antireflection film with the first center mechanical arm CR1 of processing module 10, by transfer to substrate loading part PASS2.

The substrate W of transfer to the substrate loading part PASS2 is contained in the carrier C by the indexing attachment mechanical arm IR of indexing attachment module 9.Thus, each processing of the substrate W in the substrate board treatment finishes.

Utilize accompanying drawing that above-mentioned carrying out washing treatment cell S OAK is described in detail here.

The structure of carrying out washing treatment cell S OAK at first, is described.Fig. 4 is the figure that is used to illustrate the structure of carrying out washing treatment cell S OAK.

As shown in Figure 4, carrying out washing treatment cell S OAK has rotary chuck 621, makes substrate W rotation when this rotary chuck 621 is used for flatly keeping substrate W around the vertical turning axle at the center by substrate W.

Rotary chuck 621 is fixed on the upper end of the turning axle 625 that rotates by chuck rotary drive mechanism 636.In addition, on rotary chuck 621, be formed with air-breathing path (not having diagram), by exhaust in air-breathing path under the state that substrate W is loaded on the rotary chuck 621, thereby, substrate W can be kept with flat-hand position lower surface and rotary chuck 621 vacuum suction of substrate W.

Arranged outside at rotary chuck 621 has first rotation motor 660.First rotation motor 660 is connected with first turning axle 661.In addition, first arm 662 is connected on first turning axle 661 in the mode of extending to horizontal direction, and at the front end of first arm 662 carrying out washing treatment nozzle 650 is set.

Make 662 rotations of first arm in the time of by first rotation motor 660 rotation, first turning axle 661, carrying out washing treatment moves to top by the substrate W of rotary chuck 621 maintenances with nozzle 650.

Carrying out washing treatment is set with supply pipe 663 in the mode of the inside by first rotation motor 660, first turning axle 661 and first arm 662.Carrying out washing treatment connects cleansing solution supply source R1 and washing fluid supply source R2 with supply pipe 663 by valve Va and valve Vb.By controlling the switch of this valve Va, Vb, can supply to carrying out washing treatment with the selection of the treating fluid of supply pipe 663 and the adjustment of quantity delivered.In the structure of Fig. 4, by opening valve Va, cleansing solution can be supplied to carrying out washing treatment with supply pipe 663, by opening valve Vb, washing fluid can be supplied to carrying out washing treatment supply pipe 663.

Cleansing solution or washing fluid are supplied to carrying out washing treatment nozzle 650 with supply pipe 663 from cleansing solution supply source R1 or washing fluid supply source R2 by carrying out washing treatment.Thus, can supply with cleansing solution or washing fluid to the surface of substrate W.Cleansing solution for example can use pure water, dissolved the liquid of complex compound (ionization) or fluorine class soup etc. in pure water.Washing fluid for example can use any of pure water, carbonated water, hydrogen water, electrolytic ionic water and HFE (hydrogen fluorine ether).

Arranged outside at rotary chuck 621 has second rotation motor 671.Second rotation motor 671 is connected with second turning axle 672.In addition, second arm 673 is connected second turning axle 672 in the mode of extending to horizontal direction, and at the front end of second arm 673 dried nozzle 670 is set.

Make 673 rotations of second arm in the time of by second rotation motor 671 rotation, second turning axle 672, dried moves to top by the substrate W of rotary chuck 621 maintenances with nozzle 670.

Dried is set with supply pipe 674 in the mode of the inside by second rotation motor 671, second turning axle 672 and second arm 673.Dried is connected in inert gas supply source R3 with supply pipe 674 via valve Vc.By controlling the switch of this valve Vc, can adjust the quantity delivered of the inert gas that supplies to dried usefulness supply pipe 674.

With nozzle 670, supply with inert gas with supply pipe 674 from inert gas supply source R3 in dried by dried.Thus, can supply with inert gas to the surface of substrate W.Inert gas for example can use nitrogen (N ₂).

When cleansing solution or washing fluid are supplied with in the surface of substrate W, carrying out washing treatment is positioned at the top of substrate with nozzle 650, and when inert gas is supplied with on the surface of substrate W, the position of stipulating is kept out of the way in washing with nozzle 650.

In addition, when cleansing solution or washing fluid are supplied with in the surface of substrate W, dried is kept out of the way the position of stipulating with nozzle 670, and when inert gas is supplied with on the surface of substrate W, dried is positioned at the top of substrate W with nozzle 670.

The substrate W that is kept by rotary chuck 621 is housed inside in the processing cup 623.In the inboard of handling cup 623, be provided with the spaced walls 633 of tubular.In addition, with surround rotary chuck 621 around mode be formed with the discharge opeing space 631 of the treating fluid (cleansing solution or washing fluid) that the processing that is used for discharging substrate W uses.Further, be formed with the recovery liquid space 632 that is used for handling the treating fluid that the processing of reclaiming substrate W between cup 623 and the spaced walls 633 uses in the mode of surrounding discharge opeing space 631.

In discharge opeing space 631, connecting the discharging tube 634 that is used for to discharge opeing treating apparatus (not shown) boot process liquid, connecting the recovery tube 635 that is used for to recycling and processing device (not shown) boot process liquid at recovery liquid space 632.

Handle cup 623 above be provided with the protective device 624 that is used to prevent that the treating fluid from substrate W from dispersing laterally.This protective device 624 is by constituting with respect to turning axle 625 rotational symmetric shapes.Inner face in protective device 624 upper ends, ring-type forms the discharge opeing guiding groove 641 of cross section "＜" word shape.

In addition, the inner face in the bottom of protective device 624 forms the recovery liquid guide portion 642 that the dip plane that tilted by below laterally constitutes.Near the upper end of reclaiming liquid guide portion 642, be formed with the spaced walls holding tank 643 that is used to hold the spaced walls 633 of handling cup 623.

Be provided with the protective device lift drive mechanism (not shown) that constitutes with ball screw framework etc. at this protective device 624.The protective device lift drive mechanism, make the peripheral end face of the substrate W of protective device 624 on reclaiming liquid guide portion 642 and remaining on rotary chuck 621 relative to recovery position and discharge opeing guiding groove 641 and the peripheral end face that remains on the substrate W on the rotary chuck 621 relatively to the discharge opeing position between move up and down.Be positioned under the situation that reclaims position (position of protective device as shown in Figure 4) at protective device 624, will be directed to recovery liquid space 632 by reclaiming liquid guide portion 642 from the treating fluid that substrate W disperses laterally, and reclaim by recovery tube 635.On the other hand, when protective device 624 is positioned at the discharge opeing position, will be directed to discharge opeing space 631 by discharge opeing guiding groove 641 from the treating fluid that substrate W disperses laterally, by discharging tube 634 discharge opeings.According to above structure, carry out the discharge opeing and the recovery for the treatment of fluid.

Then, the processing action to carrying out washing treatment cell S OAK with said structure describes.In addition, below the action of each constitutive requirements of the carrying out washing treatment cell S OAK of explanation is controlled by the master controller 30 of Fig. 1.

At first, when moving into substrate W, when protective device 624 descended, the 3rd center mechanical arm CR3 of Fig. 1 was loaded into substrate W on the rotary chuck 621.Be loaded in the substrate W on the rotary chuck 621, be adsorbed maintenance by rotary chuck 621.

Then, when protective device 624 moved to above-mentioned discharge opeing position, carrying out washing treatment moved to the central part top of substrate W with nozzle 650.Afterwards, turning axle 625 rotation is accompanied by this rotation and is maintained at substrate W rotation on the rotary chuck 621.Afterwards, cleansing solution is sprayed onto the upper surface of substrate W with nozzle 650 from carrying out washing treatment.Thus, carry out the washing of substrate W, the composition of the resist on the substrate W is dissolved in the cleansing solution.In the washing of substrate W, go up the supply cleansing solution to substrate W when making substrate W rotation here.At this moment, the cleansing solution on the substrate W is because centrifugal force always moves to the periphery of substrate W disperses.Thereby, can prevent that the composition that is dissolved into the resist in the cleansing solution from remaining on the substrate W.In addition, the composition of above-mentioned resist also can be for example by filling with pure water and keeping certain hour to dissolve on substrate W.Also have, the supply of the cleansing solution on substrate W also can be undertaken by the flexible spray regime of using 2 fluid tips.

Through after the stipulated time, stop the supply of cleansing solution, from carrying out washing treatment nozzle 650 jet douche liquid.Thus, the cleansing solution on the flushing substrate W.Its result, the composition that can prevent to be dissolved into the resist liquid in the cleansing solution reliably remains on the substrate W.

Further, through after the stipulated time, the rotational speed of turning axle 625 reduces.Thus, the amount of the washing fluid of throwing away by the rotation of substrate W reduces, and shown in Fig. 5 A, forms the liquid layer L of washing fluid on the whole on the surface of substrate W.In addition, the rotation of turning axle 625 is stopped and forming liquid layer L on the whole on the surface of substrate W.

In the present embodiment, adopt following structure: handling the mode of supplying with cleansing solution and washing fluid with nozzle 650 arbitrarily from cleansing solution, employing shared cleansing solution in the supply of the supply of cleansing solution and washing fluid is handled the structure with nozzle 650, but also can adopt cleansing solution to supply with the structure that the nozzle of usefulness and nozzle that washing fluid is handled usefulness separate respectively.

In addition, when supplying with washing fluid, do not spread to the back side of substrate W in order to make washing fluid, it is also passable that the never illustrated anti-flushing in the back side of substrate W is supplied with pure water with nozzle.

In addition, use at the cleansing solution that washs substrate W under the situation of pure water, do not need to carry out the supply of washing fluid.

Below, stop the supply of washing fluid, when carrying out washing treatment was kept out of the way the position of regulation with nozzle 650, dried moved to the central part top of substrate W with nozzle 670.Afterwards, spray inert gas from dried with nozzle 670.Thus, become following state shown in Fig. 5 B: the washing fluid of the central part of substrate W moves to the periphery of substrate W, and only there is liquid layer L in the periphery of substrate W.

Then, when the rotating speed of turning axle 625 (with reference to Fig. 4) rose, shown in Fig. 5 C, dried slowly moved with nozzle 670 direction periphery top from the central part of substrate W.Thus, in the very big centrifugal force of liquid layer L effect on substrate W, can therefore, can remove the liquid layer L on the substrate W reliably to the surperficial integral spray inert gas of substrate W.Its result can make substrate W dry reliably.

Below, stopping the supply of inert gas, dried nozzle 670 stops the rotation of turning axle 625 when keeping out of the way the position of stipulating.The 3rd center mechanical arm CR3 of Fig. 1 took out of substrate W when afterwards, protective device 624 descended from carrying out washing treatment cell S OAK.Thus, the processing release among the carrying out washing treatment cell S OAK.

In addition, preferably suitably change of the position of the protective device 624 in washing and the dried according to the needs of the recovery for the treatment of fluid or discharge opeing.

In addition, in carrying out washing treatment cell S OAK shown in Figure 4, carrying out washing treatment is provided with separately respectively with nozzle 670 with nozzle 650 and dried, but as shown in Figure 6, also carrying out washing treatment can be wholely set with nozzle 670 with nozzle 650 and dried.At this moment, because need be when the carrying out washing treatment of substrate W or carrying out washing treatment is moved respectively with nozzle 670 separately with nozzle 650 and dried during dried, so driving mechanism is oversimplified.

In addition, replace dried nozzle 670, and use dried as shown in Figure 7 also to be fine with nozzle 770.

The dried of Fig. 7 has the take-off pipe 771,772 that extends to oblique below from the side when vertical lower is extended with nozzle 770.Form gas ejection ports 770a, 770b, the 770c that sprays inert gas in dried with the lower end of nozzle 770 and the lower end of take-off pipe 771,772.Shown in the arrow of Fig. 7, spray inert gas respectively from each injection orifice 770a, 770b, 770c to vertical below and tiltedly.That is, with in the nozzle 770, spray inert gas in the mode that enlarges spray regime downwards in dried.

Here, when using dried with nozzle 770, carrying out washing treatment cell S OAK carries out the dried of substrate W by the action of following explanation.

Fig. 8 A～Fig. 8 C is used to illustrate used the figure of dried with the drying method of the substrate W of the situation of nozzle 770.

At first, after the surface of substrate W formed liquid layer L, shown in Fig. 8 A, dried moved to the central part top of substrate W with nozzle 770 by the method that illustrates in Fig. 5 A.Afterwards, spray inert gas from dried with nozzle 770.Thus, become following state shown in Fig. 8 B, the washing fluid of the central part of substrate W moves to the periphery of substrate W, and only there is liquid layer L in the periphery of substrate W.In addition, at this moment, dried moves so that be present in the washing fluid of the central part of substrate W reliably with the surface of nozzle 770 near substrate W.

Then, when the rotating speed of turning axle 625 (with reference to Fig. 4) rose, dried was moved upward with nozzle 770 shown in Fig. 8 C.Thus, in the very big centrifugal force of the liquid layer L effect on substrate W, the expanded range that the inert gas on the substrate W sprays.Its result can remove the liquid layer L on the substrate W reliably.In addition, dried makes 672 oscilaltions of second turning axle with nozzle 770 by the turning axle elevating mechanism (not shown) on second turning axle 672 that is arranged on Fig. 4, thereby can move up and down.

In addition, replace dried nozzle 770, and use dried as shown in Figure 9 also can with nozzle 870.The dried of Fig. 9 has downwards the slowly injection orifice 870a of enlarged diameter with nozzle 870.Spray inert gas from this injection orifice 870a along arrow shown in Figure 9 to vertical below and tiltedly.That is, though in dried with nozzle 870, also the dried with Fig. 7 is identical with nozzle 770, sprays inert gas in the mode of the expanded range of spraying downwards.Thereby, use dried nozzle 870, thereby also by carrying out the dried of substrate W with the identical method of the situation of nozzle 770 with using dried.

In addition, replace carrying out washing treatment cell S OAK shown in Figure 4, also can use carrying out washing treatment cell S OAKa as shown in figure 10.

The difference of carrying out washing treatment cell S OAKa as shown in figure 10 and carrying out washing treatment cell S OAK shown in Figure 4 is following illustrated point.

In the carrying out washing treatment cell S OAKa of Figure 10, above rotary chuck 621, be provided with the discoideus baffle board 682 that has opening at central part.To vertical direction bolster 689 is set near the front end of arm 688, in the lower end of this bolster 689, baffle board 682 with remain on rotary chuck 621 on the upper surface of substrate W relative to mode be installed with.

In the inside of bolster 689, be through with the gas feed path of with the open communication of baffle board 682 690.For example supply with nitrogen (N at gas feed path 690 ₂).

At arm 688, connecting baffle board lift drive mechanism 697 and baffle board rotary drive mechanism 698.Baffle board lift drive mechanism 697 make baffle board 682 and remain on the approaching position of the upper surface of the substrate W on the rotary chuck 621 and escape to from rotary chuck 621 above the position between move up and down.

In the carrying out washing treatment cell S OAKa of Figure 10, when the dried of substrate W, as shown in figure 11, under the state that makes baffle board 682 near substrate W, inert gas is supplied with from gas feed path 690 in the gap between substrate W and the baffle board 682.At this moment, can supply with inert gas efficiently to periphery, therefore, can remove the liquid layer L on the substrate W reliably from the central part of substrate W.

In addition, in the above-mentioned embodiment, in carrying out washing treatment cell S OAK, substrate W is carried out dried, but also can pass through other drying means such as drying under reduced pressure method, air knife drying means substrate W execution dried by the Rotary drying method.

In addition, in the above-described embodiment, be under the state of the liquid layer L that forms washing fluid, supply with inert gas from dried with nozzle 670, but in the situation of the liquid layer L that does not form washing fluid or do not use under the situation of washing fluid, make substrate W rotation and after in a single day the liquid layer of cleansing solution thrown away, with nozzle 670 supply inert gases substrate W bone dry also is fine from dried immediately.

As mentioned above, in the substrate board treatment 500 that present embodiment relates to, in exposure device 14, substrate W is carried out in carrying out washing treatment cell S OAK substrate W being carried out carrying out washing treatment before the exposure-processed.When this carrying out washing treatment, the part of the composition of the resist liquid on the substrate W is dissolved in cleansing solution or the washing fluid, and is rinsed.For this reason, even substrate W contacts with liquid in exposure-processed 14, the composition of the resist on the substrate W almost is not dissolved in the liquid.Thus, when reducing the pollution in the exposure device 14, also can prevent composition at the remained on surface resist of substrate W.Its result, the processing that can be reduced in the substrate W that produces in the exposure device 14 is bad.

In addition, in carrying out washing treatment cell S OAK, owing to after carrying out washing treatment, carry out the dried of substrate W, so during the substrate W after the carrying carrying out washing treatment, can prevent that dust etc. in the environment is attached on the substrate W.Thus, can prevent the pollution of substrate W.

In addition, washing/development treatment module 12 is provided with in the mode adjacent to interface module 13.At this moment, can be before the exposure-processed of exposure device 14 and the carrying out washing treatment and the development treatment of carrying out substrate W afterwards immediately.Thus, with substrate W from washing/development treatment module 12 to exposure device 14 conveyances and from exposure device 14 during to 12 conveyances of washing/development treatment module, can prevent that dust etc. in the environment is attached on the substrate W.Its result, the processing of the substrate W that produces in the time of can fully being reduced in exposure-processed and during development treatment is bad.

In addition, in carrying out washing treatment cell S OAK, spray inert gas to periphery, carry out the dried of substrate W by central part in rotary plate W from substrate W.At this moment, owing to can remove cleansing solution and washing fluid on the substrate W reliably, so can prevent reliably that dust etc. in the environment is attached on the substrate W after the washing.Thus, can prevent the pollution of substrate W reliably, can prevent to produce dry vestige simultaneously on the surface of substrate W.

In addition, owing to can prevent residual cleansing solution of substrate W and washing fluid after washing reliably, so from carrying out washing treatment cell S OAK with substrate W conveyance during the exposure device 14, can prevent reliably that the composition of resist further is dissolved in cleansing solution and the washing fluid.Thus, the generation of the shape defect of etchant resist can be prevented reliably, the pollution in the exposure device 14 can be prevented simultaneously reliably.

These result is to prevent reliably that the processing of substrate W is bad.

Below, describe with transport mechanism IFR at interface.Figure 12 is used for the specification interface structure of transport mechanism IFR and the figure of action.

At first, describe at the structure of interface with transport mechanism IFR.As shown in figure 12, interface is screwed to one with the movable table 21 of transport mechanism IFR with screw axis 22.Screw axis 22 is rotatably supported by brace table 23 in the mode of extending at directions X.End at screw axis 22 is provided with motor M1, by this motor M1, and screw axis 22 rotation, movable table 21 moves horizontally on ± directions X.

In addition, in movable table 21, rotatable and at ± liftable hand support the platform 24 that is mounted with of Z-direction in ± θ direction.Hand support platform 24 is connected via the motor M2 in turning axle 25 and the movable table 21, and by this motor M2, hand support platform 24 rotates.Can be provided with two hand H5, H6 that keep substrate W with flat-hand position about in the of 24 at the hand support platform with freely advancing and retreat.

Below, the action with transport mechanism IFR describes at interface.Interface is controlled by the master controller 30 of Fig. 1 with the action of transport mechanism IFR.

At first, interface transport mechanism IFR at the position of Figure 12 A, makes 24 rotations of hand supporting station, and edge+Z direction rises simultaneously, makes the hand H5 of upside enter substrate loading part PASS9.In substrate loading part PASS9, when hand H5 received substrate W, interface made hand H5 retreat from substrate loading part PASS9 with transport mechanism IFR, and hand support platform 24 edge-Z directions are descended.

Then, interface moves with transport mechanism IFR edge-directions X, and at position B, when making 24 rotations of hand support platform, the substrate that makes hand H5 enter exposure device 14 is moved into the 14a of portion (with reference to Fig. 1).Substrate W is moved into substrate move into after the 14a of portion, interface makes hand H5 move into the 14a of portion from substrate with transport mechanism IFR and retreats.

Then, the interface substrate that makes hand H6 enter exposure device 14 with transport mechanism IFR is taken out of the 14b of portion (with reference to Fig. 1).Take out of among the 14b of portion at substrate, during substrate W after hand H6 receives exposure-processed, interface makes hand H6 take out of the 14b of portion from substrate with transport mechanism IFR and retreats.

Then, interface moves with transport mechanism IFR edge+directions X, and edge+Z direction rises when position A makes 24 rotations of hand support platform, makes hand H6 enter the PASS10 of substrate-placing portion, and the PASS10 of substrate-placing portion is arrived in substrate W transfer.

In addition, with substrate W from the PASS9 of substrate-placing portion conveyance to exposure device 14 during, can not accept at exposure device 14 under the situation of substrate W, substrate W temporarily hold the keeping in buffer store SBF.

As mentioned above, in the present embodiment, substrate W during to exposure device 14, is being used the hand H5 of interface with transport mechanism IFR from the PASS9 of substrate-placing portion conveyance, substrate W during from exposure device 14 conveyances to the PASS10 of substrate-placing portion, is being used hand H6.That is, hand H6 is used in after the exposure-processed conveyance of the substrate W that is attached with liquid soon, and hand H5 is used in the conveyance of the substrate W that liquid do not adhere to.Therefore, the liquid that can not of substrate W is attached on the hand H5.

In addition because hand H6 is arranged on the below of hand H5, so even liquid from hand H6 with and the substrate W that keeps fall, liquid also not can attached to hand H5 with and the substrate W that keeps on.

And as mentioned above, even in the 4th center mechanical arm CR4, use the hand CRH8 of downside in the conveyance of the substrate W that has adhered to liquid after exposure-processed (substrate loading part PASS10 and the oven dry of exposure back are with between the thermal treatment portion 121), used the hand CRH7 of upside in the conveyance of the substrate W of the not attaching liq before exposure-processed (between substrate loading part PASS7 and the EEW of edge exposure portion and between EEW of edge exposure portion and the substrate loading part PASS9).Therefore, even in the 4th center mechanical arm CR4, liquid can be attached on the substrate W before the exposure-processed yet.

These result is, owing to can prevent on the substrate W before liquid is attached to exposure-processed, so can prevent the pollution of adhering to the substrate W that causes of the dust etc. in the environment.Thus, can prevent in exposure device 14 because the deterioration of resolution performance causes the bad generation of processing of substrate W.

In addition, in the present embodiment, carry out the conveyance of substrate W with transport mechanism IFR, but also can use a plurality of interfaces to carry out the conveyance of substrate W with transport mechanism IFR by 1 interface.

In addition, can move into the position that the 14a of portion and substrate are taken out of the 14b of portion according to the substrate of exposure device 14, the change interface is with action and the structure of transport mechanism IFR.For example, the substrate of exposure device 14 move into the 14a of portion and substrate take out of the 14b of portion be in position A with Figure 12 relative to the position time, the screw axis 22 of Figure 12 can be set.

In addition, the number of coating element BARC, RES, development treatment cells D EV, carrying out washing treatment cell S OAK, heating unit HP and cooling unit CP also can suitably change corresponding to the processing speed of each processing module.

In addition, in carrying out washing treatment cell S OAK, replace carrying out washing treatment as shown in Figure 4 to use 2 fluid tips as shown in figure 13 also passable with a side of nozzle 670 or both sides with nozzle 650 and dried.

Figure 13 is that expression is used to wash and the longitudinal sectional drawing of an example of the inner structure of 2 fluid tips 950 of dried.From 2 fluid tips 950 fluid-mixing of gas jet, liquid and gas and liquid optionally.

2 fluid tips 950 of present embodiment are called as external mix type.2 fluid tips 950 of external mix type as shown in figure 13 are made of inside subject portion 311 and outer body portion 312.Inside subject portion 311 for example is made of quartz etc., and outer body portion 312 for example is made of the fluororesin of PTFE (teflon) etc.

Central shaft along inside subject portion 311 forms liquid introduction part 311b cylindraceous.The carrying out washing treatment supply pipe 663 of Fig. 4 is installed at liquid introduction part 311b.Thus, will import to liquid introduction part 311b from cleansing solution or the washing fluid that carrying out washing treatment is supplied with supply pipe 663.

Lower end in inside subject portion 311 is formed with the liquid ejection outlet 311a that is communicated with liquid introduction part 311b.Inside subject portion 311 is inserted in the outer body portion 312.In addition, the upper end of inside subject portion 311 and outer body portion 312 is bonded with each other, and the lower end is not bonded together.

Between inside subject portion 311 and outer body portion 312, be formed with gas cylindraceous by the 312b of portion.Externally the lower end of main part 312 is formed with the gas ejection ports 312a that is communicated with by the 312b of portion with gas.Externally on the circumferential wall of main part 312, to be communicated in dried that the mode of gas by the 312b of portion be installed with Fig. 4 with supply pipe 674.Thus, will import to gas from the inert gas that dried is supplied with supply pipe 674 by the 312b of portion.

Gas is by the 312b of portion, near gas ejection ports 312a, along with downwards and diameter diminishes.Consequently, the flow velocity of inert gas quickens, and 312a is ejected by gas ejection ports.

Near the outside mixed lower end of 2 fluid tips 950 of cleansing solution that sprays from liquid ejection outlet 311a and the inert gas that sprays from gas ejection ports 312a, generation contains the vaporific fluid-mixing of the fine droplets of cleansing solution.

Figure 14 A～Figure 14 C is the washing of the substrate W when being used to illustrate 2 fluid tips 950 that used Figure 13 and the figure of drying method.

At first, as shown in Figure 4, substrate W is adsorbed maintenance by rotary chuck 621, rotates along with the rotation of turning axle 625.At this moment, the rotating speed of turning axle 625 for example is about 500rpm.

Under this state, shown in Figure 14 A, spray the vaporific fluid-mixing that constitutes by cleansing solution and inert gas to the upper surface of substrate W from 2 fluid tips 950, slowly move 2 fluid tips 950 direction periphery top from the central part of substrate W simultaneously.Thus, fluid-mixing to all injections in the surface of substrate W, carries out the washing of substrate W from 2 fluid tips 950.

Below, as shown in Figure 14B, stop the supply of fluid-mixing, when the rotational speed of turning axle 625 reduces, go up jet douche liquid to substrate W from 2 fluid tips.At this moment, for example about 10rpm of the rotational speed of turning axle 625.Thus, at the whole liquid layer L that forms washing fluid in the surface of substrate W.In addition, the rotation of turning axle 625 is stopped, the whole liquid layer L that forms on the surface of substrate W.In addition, use under the situation of pure water as the cleansing solution in the fluid-mixing of washing substrate W, also can not supply with washing fluid.

Form after the liquid layer L, stop the supply of washing fluid.Then, shown in Figure 14 C, on substrate W, spray inert gas from 2 fluid tips 950.Thus, the cleansing solution of the central part of substrate W moves to the periphery of substrate W, becomes the state that liquid layer L exists only in the periphery of substrate W.

After this, the rotational speed of turning axle 625 rises.At this moment, the rotational speed of turning axle 625 for example is about 100rpm.Thus, because the very big centrifugal force of liquid layer L effect on substrate W, so can remove liquid layer L on the substrate W.Its result makes substrate W drying.

In addition, during liquid layer L on removing substrate W, 2 fluid tips 950 also can slowly move from direction periphery top on the central part of substrate W.Thus, can therefore can remove the liquid layer L on the substrate W reliably to the surperficial integral spray inert gas of substrate W.Its result can make substrate W drying reliably.

As mentioned above, in 2 fluid tips of Figure 13, the fluid-mixing that sprays from 2 fluid tips 950 comprises the fine droplets of cleansing solution, even the therefore irregular situation in substrate W surface also can be removed attached to the dirt on the substrate W by the fine droplets of cleansing solution.Thus, can remove the dirt on substrate W surface reliably.In addition, under easy the to be moist low situation of the film on the substrate W, because remove the dirt on substrate W surface, so can remove the dirt on substrate W surface reliably by the fine droplets of cleansing solution.

Therefore, when passing through heating unit HP to substrate W enforcement thermal treatment before exposure-processed, the solvent of etchant resist etc. distils in heating unit HP, even its sublimate is once more attached under the situation on the substrate W, in carrying out washing treatment cell S OAK, also can remove its attachment reliably.Thus, can prevent pollution in the exposure device 14 reliably.

In addition, by regulating the flow of inert gas, the washing force in the time of can being easy to regulate washing substrate W.Thus, have at the organic membrane on the substrate W (etchant resist) under the situation of character of rapid wear, can prevent the breakage of the organic membrane on the substrate W by washing force is weakened.In addition, can remove the dirt on substrate W surface reliably by strengthening washing force under the situation that the dirt on substrate W surface is firm.Like this, regulate washing force by degree, thereby can prevent the breakage of the organic membrane on the substrate W, can wash substrate W reliably simultaneously according to the character of the organic membrane on the substrate W and dirt.

In addition, externally in 2 fluid tips 950 of mixed type, fluid-mixing is to generate by mixing, washing liquid and inert gas in the outside of 2 fluid tips 950.In the inside of 2 fluid tips 950, inert gas is distinguished circulation with cleansing solution at different respectively streams.Thus, can residual cleansing solution in by the 312b of portion at gas, and can be with independent the spraying from 2 fluid tips 950 of inert gas.Further, supply with washing fluids by use supply pipe 663 from carrying out washing treatment, and washing fluid can be sprayed separately from 2 fluid tips 950.Thereby, fluid-mixing, inert gas and washing fluid optionally can be sprayed from 2 fluid tips 950.

In addition, using under the situation of 2 fluid tips 950, do not needing to be provided for respectively to supply with the nozzle of cleansing solution or washing fluid and be used for supplying with the nozzle of inert gas to substrate W to substrate W.Thus, just can carry out washing and the drying of substrate W reliably with simple structure.

In addition, in the above description, supply with washing fluid to substrate W, but also can supply with washing fluid to substrate W with other nozzle by 2 fluid tips 950.

In addition, in the above description, supply with inert gas to substrate W, but also can supply with inert gas to substrate W with other nozzle by 2 fluid tips 950.

In the present embodiment, antireflection film processing module 10, etchant resist is equivalent to handling part with processing module 11 and washing/development treatment module 12, interface module 13 is equivalent to the junction, indexing attachment module 9 is equivalent to substrate and moves into the portion of taking out of, coating element RES is equivalent to first processing unit, etchant resist is equivalent to first with processing module 11 and handles unit, carrying out washing treatment cell S OAK, SOAKa is equivalent to second processing unit, development treatment cells D EV is equivalent to the 3rd processing unit, washing/development treatment module 12 is equivalent to second and handles unit, coating element BARC is equivalent to and manages the unit everywhere, antireflection film is equivalent to the 3rd with processing module 10 and handles unit, and etchant resist is equivalent to photosensitive film.

In addition, heating unit HP and cooling unit CP are equivalent to first～the 3rd thermal treatment unit, the second center mechanical arm CR2 is equivalent to the first conveyance unit, the 3rd center mechanical arm CR3 is equivalent to the second conveyance unit, the first center mechanical arm CR1 is equivalent to the 3rd conveyance unit, the 4th center mechanical arm CR4 is equivalent to the 4th conveyance unit, interface is equivalent to the 5th conveyance unit with transport mechanism IFR, hand CRH7 is equivalent to first maintaining part, hand CRH8 is equivalent to second maintaining part, hand H5 is equivalent to the 3rd maintaining part, and hand H6 is equivalent to the 4th maintaining part, substrate loading part PASS9, PASS10 is equivalent to loading part.

In addition, rotary chuck 621 is equivalent to base plate keeping device, turning axle 625 and chuck rotary drive mechanism 636 are equivalent to rotating driving device, carrying out washing treatment is equivalent to cleansing solution supply unit and washing fluid supply unit with nozzle 650, and dried is equivalent to the inert gas supply unit with nozzle 670,770,870.

In addition, 2 fluid tips 950 are equivalent to fluid tip, and liquid introduction part 311b is equivalent to liquid flow path, and gas is equivalent to gas flow path by the 312b of portion.

Claims

1. a substrate board treatment disposes in the mode adjacent to exposure device, it is characterized in that having:

Handling part, it is used for substrate is handled;

The junction, it is provided with in the mode adjacent to an end of above-mentioned handling part, is used for carrying out between above-mentioned handling part and above-mentioned exposure device the handing-over of substrate;

Above-mentioned handling part comprises:

First processing unit, it forms the photosensitive film that is made of photosensitive material on substrate;

Second processing unit, it carries out the carrying out washing treatment of substrate after forming above-mentioned photosensitive film by above-mentioned first processing unit and before carrying out exposure-processed by above-mentioned exposure device;

The 3rd processing unit, it is undertaken after the exposure-processed substrate being carried out development treatment by above-mentioned exposure device.

2. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned handling part has:

First handles unit, first thermal treatment unit that it comprises above-mentioned first processing unit, heat-treat substrate and the first conveyance unit of conveyance substrate;

Second handles unit, second thermal treatment unit that it comprises above-mentioned second processing unit, above-mentioned the 3rd processing unit, heat-treat substrate and the second conveyance unit of conveyance substrate.

3. substrate board treatment as claimed in claim 2 is characterized in that, above-mentioned second handles unit disposes in the mode adjacent to above-mentioned junction.

4. substrate board treatment as claimed in claim 2 is characterized in that, above-mentioned handling part also has the 3rd and handles unit,

The 3rd handles unit comprises:

Manages the unit everywhere, and it formed antireflection film on substrate before forming above-mentioned photosensitive film by above-mentioned first processing unit;

The 3rd thermal treatment unit, it is heat-treated substrate; And

The 3rd conveyance unit, its conveyance substrate.

5. substrate board treatment as claimed in claim 4 is characterized in that, also has substrate and moves into the portion of taking out of, and it disposes in the mode adjacent with other end of above-mentioned handling part, carry out moving into substrate and taking out of substrate from above-mentioned handling part to above-mentioned handling part,

The above-mentioned the 3rd handles unit disposes in the mode of moving into the portion of taking out of adjacent to aforesaid substrate.

6. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned junction comprises:

The 5th processing unit, it carries out predetermined process to substrate;

Loading part, its temporary transient mounting substrate;

The 4th conveyance unit, it is the conveyance substrate between above-mentioned handling part, above-mentioned the 5th processing unit and above-mentioned loading part;

The 5th conveyance unit, it is the conveyance substrate between above-mentioned loading part and above-mentioned exposure device.

7. substrate board treatment as claimed in claim 6 is characterized in that, above-mentioned the 4th conveyance unit comprises first and second maintaining part that keeps substrate,

During the substrate of above-mentioned the 4th conveyance unit before conveyance is carried out exposure-processed by above-mentioned exposure device, keep substrate, and during the substrate after conveyance is carried out exposure-processed by above-mentioned exposure device, keep substrate by above-mentioned second maintaining part by above-mentioned first maintaining part,

Above-mentioned the 5th conveyance unit comprises the 3rd and the 4th maintaining part that keeps substrate,

During the substrate of above-mentioned the 5th conveyance unit before conveyance is carried out exposure-processed by above-mentioned exposure device, keep substrate, and during the substrate after conveyance is carried out exposure-processed by above-mentioned exposure device, keep substrate by above-mentioned the 4th maintaining part by above-mentioned the 3rd maintaining part.

8. substrate board treatment as claimed in claim 7 is characterized in that above-mentioned second maintaining part is arranged on the below of above-mentioned first maintaining part, and above-mentioned the 4th maintaining part is arranged on the below of above-mentioned the 3rd maintaining part.

9. substrate board treatment as claimed in claim 6 is characterized in that, above-mentioned the 5th processing unit comprises the edge exposure portion that the periphery to substrate exposes.

10. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned second processing unit also carries out dried to substrate after substrate is carried out carrying out washing treatment.

11. substrate board treatment as claimed in claim 10 is characterized in that, above-mentioned second processing unit has:

Base plate keeping device, it keeps the substrate approximate horizontal;

Rotating driving device, it is rotated the substrate that kept by the aforesaid substrate holding device around perpendicular to the axle of this substrate;

The cleansing solution supply unit, it supplies with cleansing solution on the substrate that is held in the aforesaid substrate holding device;

The inert gas supply unit, it supplies with inert gas on substrate after supplying with cleansing solution by above-mentioned cleansing solution supply unit on substrate.

12. substrate board treatment as claimed in claim 11, it is characterized in that, above-mentioned inert gas supply unit so that the cleansing solution that is supplied on the substrate by above-mentioned cleansing solution supply unit moves the mode that above-mentioned cleansing solution is got rid of from substrate laterally from the central part on the substrate, is supplied with inert gas.

13. substrate board treatment as claimed in claim 11, it is characterized in that, above-mentioned second processing unit also has the washing fluid supply unit, this washing fluid supply unit is after supplying with cleansing solution by above-mentioned cleansing solution supply unit, and before supplying with inert gas, on substrate, supply with washing fluid by above-mentioned inert gas supply unit.

14. substrate board treatment as claimed in claim 13, it is characterized in that, above-mentioned inert gas supply unit so that the washing fluid that is supplied on the substrate by above-mentioned washing fluid supply unit moves the mode that above-mentioned washing fluid is got rid of from substrate laterally from the central part on the substrate, is supplied with inert gas.

15. substrate board treatment as claimed in claim 1 is characterized in that, above-mentioned second processing unit is by supplying with the carrying out washing treatment that the fluid-mixing that contains cleansing solution and gas carries out substrate from fluid tip to substrate.

16. substrate board treatment as claimed in claim 15 is characterized in that, above-mentioned gas is an inert gas.

17. substrate board treatment as claimed in claim 15 is characterized in that, above-mentioned second processing unit also carries out dried to substrate after substrate is carried out carrying out washing treatment.

18. substrate board treatment as claimed in claim 17 is characterized in that, above-mentioned second processing unit comprises the inert gas supply unit, and this inert gas supply unit is by supplying with the dried that inert gas carries out substrate on substrate.

19. substrate board treatment as claimed in claim 18 is characterized in that, above-mentioned fluid tip has the function of above-mentioned inert gas supply unit.

20. substrate board treatment as claimed in claim 18 is characterized in that, above-mentioned second processing unit also comprises:

Base plate keeping device, it keeps the substrate approximate horizontal;

Rotating driving device, it is rotated the substrate that kept by the aforesaid substrate holding device around perpendicular to the axle of this substrate.

21. substrate board treatment as claimed in claim 18, it is characterized in that, above-mentioned second processing unit so that the fluid-mixing that supplies on the substrate from above-mentioned fluid tip moves the mode that above-mentioned fluid-mixing is got rid of from substrate laterally from the central part on the substrate, is supplied with inert gas.

22. substrate board treatment as claimed in claim 18, it is characterized in that, above-mentioned second processing unit also comprises the washing fluid supply unit, this washing fluid supply unit is after above-mentioned fluid tip has been supplied with fluid-mixing, and before supplying with above-mentioned inert gas, on substrate, supply with washing fluid by above-mentioned inert gas supply unit.

23. substrate board treatment as claimed in claim 22 is characterized in that, above-mentioned fluid tip has the function of above-mentioned washing fluid supply unit.

24. substrate board treatment as claimed in claim 22, it is characterized in that, above-mentioned second processing unit so that the washing fluid that is supplied on the substrate by above-mentioned washing fluid supply unit moves the mode that above-mentioned washing fluid is got rid of from substrate laterally from the central part on the substrate, is supplied with inert gas.

25. substrate board treatment as claimed in claim 15 is characterized in that, above-mentioned fluid tip has: the liquid flow path of circulating liquid; The gas flow path of circulated gases; Be communicated with the also liquid ejection outlet of opening with the aforesaid liquid stream; Be communicated with the above-mentioned gas stream when being arranged near aforesaid liquid injection orifice and the gas ejection ports of opening.

26. a substrate processing method using same is the method for treatment substrate in the substrate board treatment that disposes in the mode adjacent to exposure device, have first processing unit, second processing unit and the 3rd processing unit, it is characterized in that, comprising:

Before carrying out exposure-processed, on substrate, form the operation of the photosensitive film that constitutes by photosensitive material by above-mentioned first processing unit by above-mentioned exposure device;

After forming above-mentioned photosensitive film, and before carrying out exposure-processed, carry out the operation of the carrying out washing treatment of substrate by above-mentioned second processing unit by above-mentioned exposure device by above-mentioned first processing unit;

After carrying out exposure-processed, substrate is carried out the operation of development treatment by above-mentioned the 3rd processing unit by above-mentioned exposure device.

27. substrate processing method using same as claimed in claim 26, it is characterized in that, after the operation of the carrying out washing treatment of carrying out substrate by above-mentioned second processing unit, and before carrying out exposure-processed, also has the operation of carrying out the dried of substrate by above-mentioned second processing unit by above-mentioned exposure device.