CN1779997A - Semiconductor light emitting diode structure - Google Patents
Semiconductor light emitting diode structure Download PDFInfo
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- CN1779997A CN1779997A CNA2004100523246A CN200410052324A CN1779997A CN 1779997 A CN1779997 A CN 1779997A CN A2004100523246 A CNA2004100523246 A CN A2004100523246A CN 200410052324 A CN200410052324 A CN 200410052324A CN 1779997 A CN1779997 A CN 1779997A
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Abstract
An epitaxially grown LED structure is composed of substrate, buffer layer, u GaN layer, n-type GaN:Si layer, multi-quantum-trap layer and P-type GaN:Mg layer. It features that an undoped u GaN isolating layer is grown between multi0quantum-trap layer and P-type GaN:Mg layer or N-type GaN:Si layer or both for decreasing the reverse leakage current.
Description
Technical field
The present invention relates to a kind of semiconductor LED structure, more particularly, relate to a kind of based on semiconductor LED structure gallium nitride (GaN) and compound thereof, that can be used for light-emitting diode (LED) or laser diode (LD).
Background technology
At Chinese invention patent application " composite quantum well structure high brightness GaN base blue-ray LED the epitaxial wafer growth method " (application number: 03118956.3) in of the applicant in proposition on April 16th, 2003, a kind of light-emitting diode (LED) epitaxial wafer growth method of composite quantum well structure has been proposed, wherein disclose a kind of employing MOCVD (metal-organic chemical vapor deposition equipment) technology epitaxial growth GaN base LED semiconductor structure, comprised the resilient coating on the substrate layer, plain uGaN layer, n type GaN:Si layer, multiple quantum well layer and p type GaN:Mg layer.By this LED semiconductor structure, under certain excitation current (for example 20mA), can inspire the blue light that wavelength is 455-475nm.
Because the multiple quantum well layer of this LED semiconductor structure is extremely thin, and it is very responsive to the fluctuation of MOCVD growing environment, therefore in the growth course of reality, be difficult to occur above-mentioned desirable LED semiconductor structure, the interface that n type GaN:Si layer and composite quantum well layer for example occur is unintelligible, wherein the Si that is mixed enter and even run through the composite quantum well layer, well-known, the Si element mix problems such as obviously can causing occurring the LED reverse leakage; In addition, can there be defective inevitably during crystal growth, the for example particularly appearance of helical dislocation of dislocation, if the unfavorable words of doping Si, Si can run through semiconductor structure in company with dislocation together when for example helical dislocation runs through the LED structure, the part " conducting " that causes n layer and p layer brings very big secondary face to ring for the photoelectric characteristic of LED structure.The reverse leakage that one of them secondary face sound is exactly LED, in normal product, if the LED structure is worked under 5V voltage, 20mA electric current, ideally electric leakage should be zero, but actual conditions are really not so, for above-mentioned reasons, generally all certain leakage current can occur, this will limit the photoelectric characteristic and the service condition of semiconductor LED structure, and reduces significantly the anti-attenuation performance and the useful life of light-emitting diode.According to the requirement of producing and using, under above-mentioned operating mode, general reverse leakage electric current preferably is no more than 1 μ A, and the maximum reverse leakage current can not surpass 10 μ A.But in the LED of prior art structure, reverse leakage surpasses the situation of 1 μ A even 10 μ A when regular meeting reverse leakage occurs and works under 5V voltage, 20mA electric current, greatly reduces the yields of LED reliability of structure and production.
Summary of the invention
The technical problem to be solved in the present invention is to overcome prior art the problems referred to above, and a kind of new light emitting diode construction is provided.
For solving above-mentioned prior art problems, the present invention proposes a kind of new LED structure, the leakage current when it can reduce LED work significantly, the while can not cause other decreased performance of LED again.Specifically, semiconductor LED structure provided by the invention, comprise resilient coating, uGaN layer, n type GaN:Si layer, multiple quantum well layer and p type GaN:Mg layer on the substrate layer, it is characterized in that, growth one deck uGaN interlayer between described multiple quantum well layer and described p type GaN:Mg layer.
According to an aspect of the present invention, growth one deck plain uGaN interlayer between multiple quantum well layer and n type GaN:Si layer, from the interface with multiple quantum well layer and n type GaN:Si layer from physically separating.
According to a further aspect in the invention, growth one deck plain uGaN interlayer between multiple quantum well layer and p type GaN:Mg layer, from the interface with multiple quantum well layer and p type GaN:Mg layer from physically separating.
According to a further aspect in the invention, simultaneously at the plain uGaN interlayer of one deck of all growing between multiple quantum well layer and the n type GaN:Si layer and between multiple quantum well layer and the p type GaN:Mg layer.
By above-mentioned setting, just can provide the LED structure of a kind of low electric leakage, high yield.
Implement LED structure of the present invention, compare, can reduce the reverse leakage electric current I r of led chip significantly, and improve the yields of led chip with the LED of prior art.Diode structure of the present invention can be applicable to light-emitting diode (LED) or laser diode (LD).
Embodiment
Introduce the present invention in more detail below by specific embodiment.
Embodiment 1
The TS-19 type CCS-MOCVD machine that utilizes Britain Thomas Swan company to produce, epitaxial growth LED structure on substrate, the substrate of employing is the Sapphire Substrate of the diameter 50mm of company of Kyocera production, reaction with former material is:
Trimethyl gallium, trimethyl aluminium, trimethyl magnesium, trimethyl indium (photoelectricity company of Jiangsu Nanjing University provides);
High-purity hydrogen, nitrogen, high-purity ammon and silane (grand gas companies provides in Shenzhen);
These raw material also can other producer from the market have been bought.
Epitaxially grown LED structure is: the resilient coating on the substrate layer, uGaN layer, n type GaN:Si layer, uGaN
Interlayer, multiple quantum well layer and p type GaN:Mg layer.The process route that is adopted is:
1) buffer growth: reaction temperature 500-800 ℃, reaction chamber pressure 76-250Torr, carrier gas flux be the 10-30 liter/minute, the trimethyl gallium flow be the 20-120 micromole/minute, ammonia flow is the 20-80 moles/min.Time is 0.1-20 minute.
2) uGaN layer growth: reaction temperature 950-1150 ℃, reaction chamber pressure 76-250Torr, carrier gas flux be the 5-20 liter/minute, the trimethyl gallium flow be the 80-400 micromole/minute, ammonia flow is the 200-800 moles/min.Time is 20-60 minute.
3) GaN:Si layer growth: reaction temperature 950-1150 ℃, reaction chamber pressure 76-250Torr, carrier gas flux be the 5-20 liter/minute, the trimethyl gallium flow be the 80-400 micromole/minute, ammonia flow is the 200-800 moles/min, silane flow rate be the 0.2-2.0 nanomole/minute.Time is 10-30 minute.
4) UGaN interlayer growth: reaction temperature 950-1150 ℃, reaction chamber pressure 76-250Torr, carrier gas flux be the 5-20 liter/minute, the trimethyl gallium flow be the 80-400 micromole/minute, ammonia flow is the 200-800 moles/min.Time is 0.1-5 minute.
5) Multiple Quantum Well layer growth:
Trap layer: reaction temperature 700-900 ℃, reaction chamber pressure 100-500Torr, carrier gas flux be the 5-20 liter/minute, ammonia flow is the 200-800 moles/min, the trimethyl gallium flow be the 0.1-1.0 micromole/minute, the trimethyl indium flow be the 10-50 micromole/minute.Time is 0.1-5 minute.
Build layer: reaction temperature 700-900 ℃, reaction chamber pressure 100-500Torr, carrier gas flux be the 5-20 liter/minute, ammonia flow is the 200-800 moles/min, the trimethyl gallium flow be the 10-50 micromole/minute, the trimethyl indium flow be the 5-30 micromole/minute.Time is 0.1-5 minute.
6) p type GaN:Mg layer growth: reaction temperature 950-1100 ℃, reaction chamber pressure 76-250Torr, carrier gas flux be the 5-20 liter/minute, the trimethyl gallium flow be the 80-400 micromole/minute, ammonia flow is the 200-800 moles/min, trimethyl magnesium flow be the 0.5-5.0 micromole/minute.Time is 10-50 minute.
Embodiment 2
Epitaxially grown LED structure is: the resilient coating on the substrate layer, uGaN layer, n type GaN:Si layer, multiple quantum well layer, uGaN
Interlayer, p type GaN:Mg layer.Identical among the process route that is adopted when growing each structure sheaf and the embodiment 1 here repeats no more.Difference from Example 1 is, the uGaN interlayer is arranged between multiple quantum well layer and the p type GaN:Mg layer.
Embodiment 3
Epitaxially grown LED structure is: the resilient coating on the substrate layer, uGaN layer, n type GaN:Si layer, uGaN
Interlayer, multiple quantum well layer, uGaN
Interlayer, p type GaN:Mg layer.Identical among the process route that is adopted when growing each structure sheaf and the embodiment 1 here repeats no more.Difference from Example 1 is, on the basis of the LED of embodiment 1 layer structure, and identical in the growth one deck uGaN interlayer in addition between multiple quantum well layer and p type GaN:Si layer, its growth technique condition and embodiment 1.
Comparative example 1
Epitaxially grown LED structure is: the resilient coating on the substrate layer, uGaN layer, n type GaN:Si layer, multiple quantum well layer, p type GaN:Mg layer.Difference from Example 1 is, on the basis of the LED of embodiment 1 layer structure, does not add any uGaN interlayer, and identical among remaining growth technique condition and the embodiment 1 here repeats no more.
Above-mentioned three embodiment are become the standard chips of 14 mils with the LED structure fabrication of comparative example 1, the KEITHLEY2400 type photoelectricity test instrument that employing company provides, the photoelectric characteristic of the led chip of above-mentioned three embodiment of test and comparative example 1 under 20 milliamperes operating current.
In order to guarantee precision of test result, the epitaxial wafer of the LED structure that adopts above-mentioned three embodiment and comparative example 1 technology to grow is made into chip according to 14 identical mil standard technologies respectively, each test is respectively got 100 above-mentioned led chips and is carried out, measure its mean value, the result is compared as follows:
| Forward voltage Vf (V) | Reverse breakdown voltage Vz (V) | Dominant wavelength λ (nm) | Reverse leakage electric current I r (μ A) | Chip brightness (mcd) | Yields | |
| Embodiment 1 | 3.2 | 13.5 | 465.5 | 0.2 | 42 | 95.5％ |
| Embodiment 2 | 3.2 | 13.7 | 465 | 0.3 | 45 | 96.0％ |
| Embodiment 3 | 3.3 | 14.5 | 466 | 0.1 | 48 | 98.5％ |
| Comparative example 1 | 3.1 | 12.5 | 464 | 7 | 45 | 84.2％ |
From the The above results analysis, can find out significantly, by suitably adding the uGaN interlayer, can reduce the reverse leakage electric current I r of led chip significantly, and improve the yield of led chip.Therefore, the present invention has all obtained the effect of highly significant for the performance that the improves led chip yields of reverse leakage performance and chip manufacturing particularly.
Although introduced the present invention in conjunction with the embodiments, those skilled in the art is appreciated that fully based on identical principle, the present invention also can be applied to based on gallium nitride (GaN) and compound thereof laser diode (LD) structure on.
Claims (5)
1, a kind of semiconductor LED structure, comprise resilient coating, uGaN layer, n type GaN:Si layer, multiple quantum well layer and p type GaN:Mg layer on the substrate layer, it is characterized in that growth one deck uGaN interlayer between described multiple quantum well layer and described p type GaN:Mg layer.
2, semiconductor LED structure according to claim 1 is characterized in that, also is included in growth one deck uGaN interlayer between described multiple quantum well layer and the described n type GaN:Si layer.
3, a kind of semiconductor LED structure, comprise resilient coating, uGaN layer, n type GaN:Si layer, multiple quantum well layer and p type GaN:Mg layer on the substrate layer, it is characterized in that growth one deck uGaN interlayer between described multiple quantum well layer and described n type GaN:Si layer.
According to each described semiconductor LED structure in the claim 1 to 3, it is characterized in that 4, described semiconductor LED structure is based on light-emitting diode (LED) structure of gallium nitride (GaN) and compound thereof.
According to each described semiconductor LED structure in the claim 1 to 3, it is characterized in that 5, described semiconductor LED structure is based on laser diode (LD) structure of gallium nitride (GaN) and compound thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100523246A CN1779997A (en) | 2004-11-17 | 2004-11-17 | Semiconductor light emitting diode structure |
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| CNA2004100523246A CN1779997A (en) | 2004-11-17 | 2004-11-17 | Semiconductor light emitting diode structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495750C (en) * | 2007-12-10 | 2009-06-03 | 厦门大学 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
| CN103811605A (en) * | 2014-03-12 | 2014-05-21 | 合肥彩虹蓝光科技有限公司 | Epitaxial growth method for effectively improving reverse electric leakage of gallium nitride based light-emitting diode |
| CN108598242A (en) * | 2018-04-19 | 2018-09-28 | 如皋市大昌电子有限公司 | A kind of gallium nitride light-emitting diode and preparation method thereof |
-
2004
- 2004-11-17 CN CNA2004100523246A patent/CN1779997A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495750C (en) * | 2007-12-10 | 2009-06-03 | 厦门大学 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
| CN103811605A (en) * | 2014-03-12 | 2014-05-21 | 合肥彩虹蓝光科技有限公司 | Epitaxial growth method for effectively improving reverse electric leakage of gallium nitride based light-emitting diode |
| CN103811605B (en) * | 2014-03-12 | 2016-06-22 | 合肥彩虹蓝光科技有限公司 | A kind of epitaxial growth method of the reverse leakage improving gallium nitride based light emitting diode |
| CN108598242A (en) * | 2018-04-19 | 2018-09-28 | 如皋市大昌电子有限公司 | A kind of gallium nitride light-emitting diode and preparation method thereof |
| CN108598242B (en) * | 2018-04-19 | 2020-04-14 | 如皋市大昌电子有限公司 | Gallium nitride light-emitting diode and preparation method thereof |
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