CN1779880A - Use of non-crystal diamond material - Google Patents
Use of non-crystal diamond material Download PDFInfo
- Publication number
- CN1779880A CN1779880A CN 200510109144 CN200510109144A CN1779880A CN 1779880 A CN1779880 A CN 1779880A CN 200510109144 CN200510109144 CN 200510109144 CN 200510109144 A CN200510109144 A CN 200510109144A CN 1779880 A CN1779880 A CN 1779880A
- Authority
- CN
- China
- Prior art keywords
- crystal diamond
- diamond material
- application
- energy
- material according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
An application of non-crystal diamond is disclosed. It can emit the greatest deal of electrons in vacuum by supplying the lowest energy to it. It contains the carbon atoms (at least 90%) and has a emitting surface with the roughness of 10-10000nm. It can be used for various vacuum devices such as switch, laser diode, etc.
Description
The application is that application number is 03148262.7, and the applying date is on 06 30th, 2003, and denomination of invention is divided an application for " non-crystal diamond material and manufacture method thereof and application ".
Technical field
The present invention mainly relates to the application of non-crystal diamond material, particularly in a kind of application like the device of generation electronics in the material with carbon element of diamond.In this please be to have comprised physics, chemistry, electronics and material science.
Background technology
A heat emission (Thermiomic Emission) and an emission (Field Emission) have many different utilizations already, for example cathode ray tube (Catbode Ray Tube), Field Emission Display (FieldEmission Display).
Usually heat emission refers to that electronics is heated and penetrates.Emission refers to that then electronics is ordered about by electric field and wears tunnel and penetrate.The example of these devices and description comprise following United States Patent (USP) 6,229,083; 6,204,595; 6,103,298; 6,064,137; 6,055,815; 6,039,471; 5,994,638; 5,984,752; 5,981,071; 5,874,039; 5,777,427; 5,722,242; 5,713,775; 5,712,488; 5,675,972; And 5,562,781 document etc.Though a lot of aspects that are applied in of electronics emission all have quite successful example, the successful case of heat emission is than lacking that the field emission comes.Though an emission is easier to reach, be subject to shoot material, the restriction of shortcomings such as elasticity, cost, life-span and efficient.
Many different materials are used among the field emission device already, and reach with less energy requirement, produce higher electric current output.Recently, have a kind of material to make industry that it is produced suitable interest because of its physical characteristic, that is exactly a diamond.Particularly, diamond has a kind of approximate negatron affinity (NegativeElectron Affinity; NEA), the affinity of this negative value then can penetrate the electronics that adds easily.Yet diamond also has high energy gap (Band Gap), and also because like this, diamond also becomes a kind of electronics that prevents and passes through wherein, or the insulator that leaves.Once the someone was attempting going to improve or reduce the energy gap of diamond, for example was to add some impurity (Dopant) in diamond, or made diamond form the structure with geometry in particular.But these attempts still exist into heterodyne, efficient is low and cost is high restriction therebetween.Therefore, in the application that the application of field emission device still is limited on the small scale and low current is exported.
Therefore, only need to draw quite a spot of energy and reach the material that high electric current is exported, still need seek this class material by the constantly effort of research and development by the power supply place.
Summary of the invention
The purpose of this invention is to provide a kind of non-crystal diamond material and manufacture method thereof and application, non-crystal diamond material combines the characteristic of material and geometry, this class material has comprised at least 90% carbon atom, and wherein at least 30% carbon atom is to be linked on the tetrahedron of distortion.The material of this class has still comprised an electronics surface of emission, and it is to have by 10-10, the rough height of 000 nanometer; On the other hand, the ratio that is linked at carbon atom on the tetrahedron of distortion is at least 50%, reaches behind the energy that obtains capacity the purpose of launching electronics in a vacuum.
The object of the present invention is achieved like this: a kind of non-crystal diamond material, it is characterized in that: it comprises at least 90% carbon atom, wherein at least 30% carbon atom be with the distortion the tetragonal body coordinate and bond together, this diamond material is to have the electronics surface of emission, this electronics surface of emission has a concavo-convex roughness height, and this concavo-convex roughness height is 10-10,000 nanometer, the energy of input capacity is to this diamond material, and this electronics surface of emission is an emitting electrons.
This concavo-convex roughness height is below 10,000 nanometers.This concavo-convex roughness height is 100-1,000 nanometer.This concavo-convex matsurface is to have most peak values, this peak density be on the surface of emission every square centimeter contain at least one 1,000,000 peaks.This concavo-convex matsurface is to have most peak values, this peak density be on the surface of emission every square centimeter contain at least ten hundred million peaks.
Having 50% carbon atom at least is that tetragonal body coordinate with this distortion combines.The energy of this input capacity be selected from following at least a: comprise heat energy, luminous energy or electric field energy.The temperature of this heat energy is less than 500 ℃.
The present invention also provides a kind of manufacture method of non-crystal diamond material, it is characterized in that: it comprises following step: a carbon source is provided; And utilize cathodic arc technique and form non-crystal diamond material.
The present invention provides a kind of application of non-crystal diamond material again, it is characterized in that: it is applicable to the device of emitting electrons, the device of this emitting electrons is to comprise non-crystal diamond material, electrode and anode, this non-crystal diamond material includes 90% carbon atom, wherein 30% be one the distortion the tetragonal body coordinate in combination, this diamond material is to have the electronics surface of emission, and this electronics surface of emission is to have 10-10, the concavo-convex roughness height of 000 nanometer; This electrode is to combine with this non-crystal diamond material and form a negative electrode; This anode is with the surface of emission of this non-crystal diamond material and mutual opposition, and between being across a vacuum space, this negative electrode adds the energy of a capacity, electronics enters this vacuum space from its surface of emission.
The device of this emitting electrons still has a grid, this grid be the position in this vacuum space, and be between this surface of emission and anode, this grid produces an electric field when adding a forward grid voltage.This grid is a wire netting.The device of this emitting electrons still has a low-energy cation in the vacuum space, this is low-yield to be to be enough to reduce to the interelectric repulsive force that is emitted from the electronics surface of emission minimum.The low-energy cation of the device of this emitting electrons is to be selected from down at least a in the column element: it comprises lithium, sodium, potassium, rubidium, caesium, thulium, beryllium, magnesium, calcium, strontium or barium.The low-energy cation of the device of this emitting electrons is a caesium.The concavo-convex roughness height of the surface of emission of the device of this emitting electrons is less than 10,000 nanometers.The concavo-convex roughness height of the surface of emission of the device of this emitting electrons is 100-1,000 nanometer.The concavo-convex matsurface of the device of this emitting electrons is to have most peak values, this peak density be on the surface of emission every square centimeter contain at least one 1,000,000 peaks.The peak density of the device of this emitting electrons be on the surface of emission every square centimeter contain at least ten hundred million peaks.The carbon atom of the non-crystal diamond material of the device of this emitting electrons has at least 50% to be to be in the same place with the tetragonal body coordinate bond of distortion.The energy of the device of this emitting electrons be selected from following at least a: comprise heat energy, luminous energy or electric field energy.The temperature of the heat energy of the device of this emitting electrons is less than 500 ℃.The device of this emitting electrons is in order to as a motor generator.The device of this emitting electrons is in order to as a solar cell.The device of this emitting electrons is in order to as a cooling device.This cooling device is a radiating surface, and this radiating surface cools off an integrated circuit.This cooling device cools off a contiguous zone, and makes temperature be lower than 100 ℃.This electrode is coated with this non-crystal diamond material, and week is to strengthen the electronics output of this electrode.To this electrode coating non-crystal diamond material, in order to the service life of this electrode that extends.This electrode is the some of battery.This electrode is the some of electric deposition device.This electrode is the some of light emitting source device.
The rough height of the surface of emission of the device of emitting electrons of the present invention also can have many different structures, and rough height of the present invention is to be approximately below 10,000 nanometers, is preferably and is approximately 1,000 nanometer.
Except the height parameter, this rough surface of emission also has some peak density parameter, the peak density that this rough surface of emission had at least every square centimeter contain 1,000,000 peak values.Preferable peak density at least every square centimeter contain 100,000,000 peak values.
The many different form of energy that merges of heat energy, photon energy, electric field energy or above-mentioned each energy for example, can be changed by material of the present invention, and can quicken the electron stream that penetrates by this material, the form of this energy then may be by itself employed heat energy, or and the merging of electric field energy.On the other hand, this energy may be itself employed photon energy (luminous energy just), or and the energy that merges of electric field energy.The another kind of possible energy then is electric field energy.Many different energy intensities can use according to need, are using the required electric current of generation under the material of the present invention.The intensity of this energy can be made decision partly by the form of the employed certain material of reality, the rough surface of emission and the intake that uses.This energy may be the heat energy that has less than 500 ℃ of temperature.
Non-crystal diamond material of the present invention also can combine with many different peripheral cells or unite, so that on many devices of making a profit in can characteristic by material itself, and emitting electrons in vacuum.For example, form a device of emitting electrons this reciprocatable joining together of so-called non-crystal diamond material, this device then still has one and non-crystal diamond material and is coupled together mutually, to form the electrode of a negative electrode and anode, wherein, anode is the face of accepting with respect to non-crystal diamond material, and is and the cathode emission face vacuum space that is separated by, if after negative electrode has been imported enough energy, then can launch electronics at vacuum chamber.
Other different element also can be under needs and is added, and finishes a specific device.Electron emitting device still can comprise a grid, and it is to be positioned at the vacuum space, and accepts between the face at cathode emission face and anode, and when supply one voltage gave this grid, this grid can produce an electric field.This grid can be a metal screen.On the other hand, this vacuum space also can add a certain low-energy cation, and these cations can reduce to the interelectric repulsive force that is emitted by the electronics surface of emission minimum completely.Being fit to cationic element example is to include but not limited to lithium, sodium, potassium, rubidium, caesium, thulium, beryllium, magnesium, calcium, strontium, barium, or the mixing of above-mentioned each element.Preferable cation can be the caesium cation.
Every ripe in this skill person, can recognize that non-crystal diamond material can be used on many different devices, and be used for different purposes.The scope of this type of device also has other various device including but not limited to large scale or undersized motor generator, cooling device, transistor, switch, expander, negative electrode, electrode and annular laser free gyroscope.This device can be a motor generator; An or cooling device.This cooling device can be reduced to the temperature of an adjacent domain and be lower than about 100 ℃.
Non-crystal diamond material of the present invention can use the known different technologies of industry to make.And the carbon source that need provide has been be provided this type of method, and desire forms the employed deposition process of non-crystal diamond.
Method of the present invention is by using a kind of cathodic arc technique to form non-crystal diamond material.
The prior characteristic of the present invention is summarized out, is not to show in the mode that enlarges, and so, detailed description after this can be easier to allow the people understand, and contribution of the present invention also can be made us knowing from experience.
Describe in detail below in conjunction with preferred embodiment and accompanying drawing.
Description of drawings
Fig. 1 is the schematic side view of non-crystal diamond material of the present invention;
Fig. 2 is the schematic side view of the non-crystal diamond material of Fig. 1, and it is to become one after absorbing enough energy, the device of emitting electrons in vacuum with different elements combination;
Fig. 3 is the schematic perspective view of diamond material of the present invention, and it is made by the cathode arc program;
Fig. 4 is the part enlarged diagram of non-crystal diamond material shown in Figure 3;
Fig. 5 is of the present invention by the map of current that electric field produced that non-crystal diamond material brought out;
Fig. 6 is the diamond tetrahedron with tetrahedron coordinate of general or normal carbon bond knot of the present invention;
Fig. 7 is the diamond tetrahedron with tetrahedron coordinate of non-general or undesired carbon bond knot of the present invention.
Embodiment
Before the present invention begins to disclose or illustrates, must recognize, the present invention is subject to these specific structures, step or disclosed material, but can extend to other similar structure, step or material, this is like being for ripe for this skill person in the relevant industries, is can utilize the revealer of institute and in addition the overline combination is general.Also need recognize that at this employed example only be to be used to illustrate particular specific embodiment, rather than be to limit the present invention.
What must notice is: in specification and protection range, a of odd number, an and the have most reference values, only in the literary composition clear and definite explanation its be meaning with other.Therefore, " diamond grains " comprised one or more diamond grains, and " carbon source " then is to have comprised one or more carbon source, and one " cathodic arc technique " then comprised one or more this type of technology.
Describing and advocating that when of the present invention, employed term will be used according to following definition:
1, " vacuum " used in the present invention refers in the situation of pressure condition less than the 10-2 Bristol.
2, " diamond " used in the present invention refer to carbon atom and other carbon atom with a kind of network mode of well-known sp3 bond bond a kind of structure together.Particularly, each carbon atom is to be surrounded by four carbon atom, and with its bond mutually, each carbon atom also is the top of being located in positive tetrahedron.In addition, the bond length between two carbon atoms is 1.54 dusts (), and the angle between any two bonds is 109 degree 28 minutes and 16 seconds under the normal temperature state.Normal tetrahedral structure is shown in Fig. 6 between carbon atom.The structure of diamond and character comprise its physical characteristic and electrically then are that industry is known.
3, " the tetrahedron coordinate of distortion " used in the present invention tetrahedral bonds junction structure of referring to carbon atom is irregular, has produced distortion by the structure of above-mentioned normal diamond positive tetrahedron.The distortion of this kind normally because of or some bond long in the length of some bond too short due to, simultaneously, between the angle of bond, produce variation and also can cause same result.In addition, tetrahedral distortion has changed the feature and the characteristic of carbon, makes its sp between between carbon atom
3Bond structure (diamond just), or sp
2Between the bond structure (graphite just).One contain carbon atom with the distortion tetragonal body and the example of bond material together is exactly a non-crystal diamond.Carbon atom then is presented at Fig. 7 with the tetragonal body coordinate bond representative graph together of distortion.
4, " non-crystal diamond " used in the present invention refers to a kind of material, and it is to be main element with carbon atom, and it is that bond is together with the tetragonal body coordinate of distortion for a large amount of carbon atom.It should be noted that: many different elements can also be impure or the mode of impurity and being present in the material of carbon containing, and these elements are then including but not limited to hydrogen, sulphur, phosphorus, boron, nitrogen, silicon, tungsten etc.The content of carbon can be at least 90% in non-crystal diamond material, wherein then at least 30% carbon be with the distortion the tetragonal body bond together.
5, " coarse " used in the present invention refers to by when doing surface analysis, the assessment of doing for the different characteristic of the concavity and convexity on surface.Many diverse ways all can be used as the pointer of surface roughness, for example peak or the height of protrusion from the teeth outwards, or in the surperficial trench or the degree of depth of depression.In addition, measure concavo-convex method and comprised peak or the quantity of depression (the just peak or the density of depression) in a specific zone, and the distance between between peak or depression.
What 6, " containing metal " used in the present invention referred to is exactly a kind of metal, or a kind ofly contains two kinds or the alloy of multiple metal.For this skill person, it is to know many different metal materials for ripe, and for example aluminium, copper, chromium, iron, steel, stainless steel, titanium, tungsten, zinc, zirconium, molybdenum etc. have also comprised the alloy and the synthetic of above-mentioned metal simultaneously.
7, " substantial " used in the present invention when the number of material or quantity, or during a certain characteristic of this material, it refers to: it is enough to provide the amount of the effect that this material or characteristic expection can provide.
8, " not having in fact " used in the present invention noun is used for a kind of number or when amount of material, or during a certain characteristic of this material, it refers to: lack this material or this characteristic, or the amount of this material or characteristic is to be enough to teach a measurable effect, and this measurable effect is normally taught by this kind material or characteristic.
9, " electron affinity " used in the present invention refers to: an atom attracts in the one track or in conjunction with the trend of an electronics.
10, " negatron affinity " used in the present invention (NEA) refers to the trend of atom refusal free electron, or under the energy input of an a small amount of, can discharge the trend of electronics in its track.Those are ripe in this skill person, when recognizing that negatron affinity is composition or its geometry that can be by material or the comprehensive method of aforesaid way forms.
11, the data on concentration, quantity and other numerical value is that form with a kind of scope is presented or represents.The use that should recognize this kind range format only is based on convenience and succinct, therefore when explaining, should have its elasticity and can comprise except citation clear and definite in scope coming out and as other numerical value the numerical value of restriction, also can be included in simultaneously interior all individual number of number range or underrange that institute quotes from out, this just looks like to be that each numerical value and underrange are that clear and definite quilt is quoted from out.
12, as example, a number range " about one micron to about five microns " should be construed to and not only comprise about one micron to about five microns that clearly citation is come out, and also should be included in interior each numerical value and the underrange of scope of this appointment simultaneously.Therefore, be contained in each numerical value in this number range, for example 2,3 and 4, or the underrange of 1-3,2-4 and 3-5 etc. for example.This principle also is applicable to only quotes from a single numerical value.No matter the institute's description scope or the width of characteristic are answered in this explanation, and are applicable to any situation without exception.
The invention relates to a kind of non-crystal diamond material and manufacture method thereof and application, it is behind input one enough energy and produce electronics under vacuum.
As in background technology, using many different materials all is to be that attempt reaches this purpose, and it is to have comprised diamond material and disclosed device in WO 01/39235.Because the characteristic of its high energy gap, the crystallization diamond also is not suitable for being used as an electronic emitter, unless its revised, to reduce or to change its energy gap.Therefore, be used to change the technology of diamond band gap, for example diamond soaked and moisten in different admixtures, and revise diamond structures,, all make the use generation of electronic emitter make us querying so that it has some structural feature etc.
Many different non-crystal diamond materials can be in supply emitting electrons during one energy source and easily.These materials are the NEA characteristics with diamond, but can't be subjected to the puzzlement of the band gap issues of pure diamond.So electrons excited is to pass through non-crystal diamond material like a cork by institute's supplying energy, and use less diamond to use energy still less to be launched.
Non-crystal diamond material of the present invention is the absorption region with a kind of high energy, and can allow broader energy be converted into electronics, promotes the efficient of conversion.
Many differences, and the specific non-crystal diamond material of required feature can be provided is to be included within the present invention.But the non-crystal diamond of relevant accelerated electron emission of the present invention promptly is the tetragonal body coordinate of its distortion, and the tetragonal body coordinate by this distortion, the in addition combination of many carbon atoms.
The tetragonal body coordinate can allow carbon atom obtain sp
3The bond characteristic, this then can promote the surface appearance that NEA is required.Simultaneously, because the bond of the different length of carbon atom, it also can provide most different and effective energy gaps of planting.Based on this, the problem of the energy gap of pure diamond has just overcome, and non-crystal diamond material can be in emitting electrons under the vacuum.
Can comprise about at least 90% carbon atom at non-crystal diamond material of the present invention, and comprise at least then that wherein 30% carbon atom is that bond is together with the tetragonal body coordinate of distortion.
Can comprise that at non-crystal diamond of the present invention at least 50% carbon atom is that bond is together with the tetragonal body coordinate of distortion.
Consult shown in Figure 1ly, can promote that relevant for non-crystal diamond of the present invention electronics emission is its structure of how much.A specific embodiment of the structure of the non-crystal diamond of making according to the present invention 5.Particularly, non-crystal diamond material is to have one can accept energy, for example is the energy input face 10 of heat energy, and one can be by this place the electronics surface of emission 15 of emitting electrons.In order more to promote the emission of electronics, this electronics surface of emission 15 is to have the uneven or surface of emission of roughness, and it is can concentrate electron stream and add heavy current output, is by most peaks and protrudes 20 and form in the roughness that this presented.
When many conventional apparatus all once attempted to concentrate electronics, for example, concentrate electronics by teaching most mound shapes or taper to a surface of emission, wherein without any a device under the situation of using energy input, and reach the demand that high electric current with multiple different application is exported.In addition, this kind shortcoming is owing to mound shape, taper etc. are all too big, so that its density is also too little, thus can't concentrate electronics according to demand, and strengthen electron stream.The size of conventional method in height is greater than most microns usually, and therefore allowing less than every square centimeter only is 1,000,000 protrusion density.But when carbon nano-tube can reach than the higher output of other traditional reflector, carbon nano-tube had shown its fragility, short life cycle simultaneously, and the defective that does not also match on electrical level and electron stream.
The roughness of the surface of emission of the present invention is the height that has by 10 to 10,000 nanometers.The height of this roughness may be to have about 10,000 nanometers, or has about 1,000 nanometer.In addition, roughness can be to have peak density to be at least on the surface of emission, every square centimeter of nearly 1,000,000 peaks, or roughness can be to have peak density to be at least on the surface of emission, every square centimeter of nearly 100,000,000 peaks, or roughness can be to have peak density to be at least on the surface of emission, every square centimeter of nearly 1,000,000,000 peaks.The height of any numeral and the combination of density all can be used, and to reach a kind of specific surface of emission roughness, this roughness then is to be used for producing electronics to export required.Roughness is to comprise being 10 approximately at least, the height of 000 nanometer, or on the surface of emission greater than the about density at 1,000,000 peaks of every square of metric cube, roughness is to comprise being 1 approximately at least, the height of 000 nanometer, or on the surface of emission greater than the about density at 1,000,000,000 peaks of every square of metric cube.
Non-crystal diamond material of the present invention is to utilize many different energy input patterns to produce electronics.Then comprise about the example of suitable energy but be not to be limited to, high temperature or heat energy, light or luminous energy and electric field energy.All ripe in this skill person, when recognizing that other is suitable for so that the electron production in non-crystal diamond material is effectively shaken, so that the release of material and the energy pattern of passing through and leaving also can be used.In addition, the combination of different-energy also can be used, and reaching a specific result, or the function that equity decide device modified, so as non-crystal diamond can and its cooperation.
Energy pattern used in the present invention can be a heat energy.A kind of acceptor of energy then can produce related with non-crystal diamond of the present invention or be coupled together mutually, so then can assist to the absorption of heat and with thermal conversion to material.Knowing this skill person, can to realize this kind absorber be to have comprised many storing in advance can absorb the material of heat energy, for example black carbon etc.Can have by the heat energy that non-crystal diamond material absorbed and to be lower than 500 ℃ temperature.
The present invention can be electric field energy (a grid bias-voltage just) in order to the energy that promotes electron stream.This electric field energy utilize following grid or utilize those for ripe be to be applied to non-crystal diamond material in this skill person for the mechanism of quite being familiar with.
Non-crystal diamond material of the present invention can also be worked in coordination with or combination mutually with many different elements, can produce different devices.
Consult shown in Figure 2ly, it is the made motor generator of the present invention.It should be noted that: non-crystal diamond material 5 is to have an electrode 25 that is coupled together mutually with energy input face 10, and forms a negative electrode.In addition, a kind of energy harvester 40 is with this electrode 25 and coupling mutually.Energy harvester 40 can be included within the present invention according to need, strengthens the heat energy or the collection of luminous energy and is transmitted into non-crystal diamond material.An anode 30 is the surface of emissions 15 that are close to non-crystal diamond material, then is by a vacuum space 35 surface of emission 15 and anode to be separated therebetween.The grid 45 that can comprise an electric field is to be placed within the vacuum space 35, and is close to the surface of emission 15, and in one aspect, then is to come coupling with it, or can be connected with it, for example is by a kind of dielectric support (not shown).Those are ripe can or should to be added in the assembly shown in Figure 2 when the element that can understand other easily in this skill person, reaching a certain specific target, or makes a device especially.Do not lie under the situation of restriction, a connecting line 50 is can be placed between negative electrode and the anode, and finishes a whole circuit, allows electric current pass through, and allows the one or more device (not shown)s of electric current that need operate, or exercises other work.
In addition, the input and output line, for example be that a power supply (not shown) can be connected with this grid, and provide needed electric current, bring out an electric field, or the postivie grid bias-voltage, general like the element that is other needs, reach a specific device, this for ripe be can understand quite easily in this skill person.
Above-mentioned element can have different structures, also may be made by different materials.Grid 45 can be to be made by a conduction or metal material, can also be coupled together mutually by an insulator (not shown) simultaneously with the surface of emission 15, and this insulator then to can be used as be a sept or support.Grid can be a metal screen or a screen cloth.This kind screen or screen cloth can be supported at the side that installs, and only come to separate with the surface of emission by this vacuum space.When structure is that aforesaid needs for insulator have just no longer included this demand as this moment.In addition, for the electric conducting material that is fit to of electrode 25 and anode 30 for those ripe for this skill person be quite easily full of beard and.This type of material and structure partly are to be decided by the function of installing, and this device then this assembly merges.
Hindering or at least in a certain degree is slowed down most reasons by surface of emission emitting electrons, one is the electronics that is transmitted into already in the space, true chamber.Particularly, the Electronic Negative electric charge that appears in the vacuum space repels the electronics that can be transmitted in the vacuum space in one aspect.So, this vacuum space is the low energy cation that can comprise an amount, and it is to be enough to and will to reduce to minimum between interelectric repulsive force.Most cations of planting are quite to be suitable for this purpose, and it is to comprise but be not the cation that is limited to lithium, sodium, potassium, rubidium, caesium, thulium, beryllium, magnesium, calcium, strontium, barium etc., with and composition thereof, cation is preferable can be the strontium cation.
Because electronics is can utilize non-crystal diamond material of the present invention and the event of generation easily, has comprised that the electron stream that uses an electric field can quicken the absorption of heat energy at the electronics input face, can allow electronic emitter of the present invention become a cooling device.Therefore, present invention includes a kind of cooling device, it is to absorb heat energy in the vacuum by electronics is emitted in the electric field that brings out.The element that this class device can have different forms and use many supports, it is like being above-mentioned motor generator.Cooling device can be cooled near zone and be lower than 100 ℃.
Employed in the present invention non-crystal diamond material can via use ripe in this skill person institute detail knowledge many diverse ways and produce.This material or can be via using a kind of cathode arc mode obtain.The method of many cathode arcs is quite known for this skill person for ripe, for example in United States Patent (USP) the 4th, 448,799; 4,511,593; 4,556,471; 4,620,913; 4,622,452; 5,294,322; Disclose in 5,458,754 and 6,139,964, generally speaking, cathodic arc technique has included carbon atom at a subject matter or the evaporation deposition of suprabasil physics (Physical Vapor Deposition; PVD).Electric arc is by a big electric current is passed a graphite electrode that is used as negative electrode, and carbon atom is vaporized with this electric current.The carbon atom of vaporization also gives ionization simultaneously, with the portability positive charge.The negative-grid bias-voltage of varying strength is to be used for driving carbon atom towards a conduction target.If carbon atom has the energy (just about 100eV) of capacity, it will clash into object, and adheres in its surface, to form a material containing carbon, for example non-crystal diamond.
Generally speaking, how much contained energy is to obtain by the amount of adjusting the grid bias-voltage in atom, and deposition then can be controlled by the control arc current.Also can adjust simultaneously the twisting coefficient (sp just of carbon atom tetragonal body coordinate for these parameters and other parameter control
3/ sp
2And how much or the structure of non-crystal diamond material (also just for example is that a kind of high negative-grid bias-voltage is can quicken carbon atom and increase sp ratio),
3Bond).
In addition, increase arc current and can increase the impact rate of high-throughout carbon ion target.Therefore, under the situation that temperature raises, the carbon of deposition will be converted into more stable graphite.So the final structure of non-crystal diamond material and composition (just its energy gap, NEA and surface of emission roughness) all can be controlled by the situation of controlling the cathode arc that forms at this material.
Non-crystal diamond material of the present invention also can be applicable to have the condition shape of atmospheric pressure or positive pressure.For example, electrode and negative electrode can be designed so that to use non-crystal diamond material, for example coating layer of metal electronics emission material on fluorescent tube.In this case, not only the function of non-crystal diamond coating is the usefulness as protection, has also extended widely the service life of metal electrode simultaneously, and also can assist the emission of electronics.Therefore, requiredly can reduce greatly, and it also can reduce the temperature of metal electron emitter in order to the gas in the bulb is given luminous voltage.This combination with various advantages can extend the service life of fluorescent lamp synergistically significantly.
In addition, other need also can obtain similar advantage by the device that emitting electrons produces light, and for example scanner, photocopier, lcd screen then are that the light of automobile is that other also has various application in addition.
In addition, non-crystal diamond also can be coated on general electrode, with flowing of accelerated electron.The electrode of this class can be applied in the electro-deposition of battery and metal, for example electroplates.This type of electrode is can be used in the solution of water.For example, in order to monitoring water quality by measuring resistivity of water, or the electrode of edible things such as fruit juice, beer, soda for example.Because etch-proof characteristic, the electrode of non-crystal diamond have produced great advantage for traditional electrode.
Amorphous diamond electrodes has tangible advantage especially in some specific application, that is exactly an electro-deposition applications.Particularly, most of electric deposition devices the problem that can suffer from be exactly because electrode has absorbed the different polarization that gas produced.Yet based on the strong inertia speciality of non-crystal diamond, the electrode made by non-crystal diamond can't polarize the most at last.
In addition, the speciality of inertia has also formed the normal high electrical potential energy that is in the aqueous solution.Under normal situation, this voltage will evaporate water.Based on the high electrical potential energy of having of non-crystal diamond, the solute in solution will be separated out before the water evaporation.This specific character will be suitable useful, and it can utilize the electrical potential energy of high oxidation that element is given electro-deposition, and for example lithium and sodium though be suitable difficulty, are basic impossibilities in the past.
One similar aspect because the high potential energy of being reached in solution by non-crystal diamond, the solute that presents with atomic a small amount of can be by separating out in the solution, and detect out.Therefore, material of the present invention is in that to make tool high responsive and can measure in solution, and it is suitable useful for example having on the diagnostic tool that is lower than the plumbous different elements of part per billion (ppb) or the device.This application has comprised any element that can separate out or be adsorbed on the electric charge, and it has comprised biochemical material, for example is the body fluid of blood and other urine etc.
Based on above-mentioned explanation, present invention includes in the manufacture method of this illustrated diamond material and the method for use.Except above-mentioned motor generator of mentioning and cooling device, but the device of a lot of and work theoretical based on emitting electrons in a vacuum also the application of the invention non-crystal diamond material and benefit a great deal.Many can be by knowing the device that this skill person can realize, comprised but be not limited to transistor, supper-fast switch, annular laser free gyroscope, current amplifier, microwave emitter and other electron beam device.
A kind ofly the method that enough energy come the manufacturing non-crystal diamond material of emitting electrons be can absorb in a vacuum, the step that a carbon source is provided, the method that forms the step of non-crystal diamond material and use a kind of cathode arc by the carbon source of being prepared comprised.This kind method also can comprise on the surface of emission collaborative or coupling in a grid, can when an electric field is provided, strengthening the emission of electronics.In addition, this method has also comprised can cation at the end of surface of emission placed around under vacuum, its amount how much be to be enough to reduce to the interelectric repulsive force that is emitted by the electronics surface of emission minimum.
A kind of electron stream or method of electric current of producing in a vacuum comprised the step of formation non-crystal diamond material described herein, and imports the energy that is enough to produce electron stream in this material.
It what follows is the example that is to illustrate according to the whole bag of tricks of manufacturing electronic emitter of the present invention.
Consult Fig. 3-shown in Figure 5, a kind of non-crystal diamond material is to use cathodic arc deposition and makes.Camber that it should be noted that the surface of emission is the height with about 200 nanometers, and to have every square centimeter approximately be the peak density that 1,000,000 peaks are arranged.In making this kind material, at first, a kind of silica-based N type wafer with (200) orientation is to come etching about 20 minutes by mercury ion.Secondly, etched Silicon Wafer then is to utilize by Multi-Arc Rodkaway, and the Tetrabond of Niu Zexi manufacturing is coated with.The graphite electrode of coating system is vaporized and forms the electric arc with 80 amperes, and this electric arc then can be by the negative-grid bias-voltage of one 20 volts of voltages guiding silicon substrate, and in this silicon substrate place deposition.Remaining non-crystal diamond material then is by removing in this coating system, and observes under an atomic force microscope, as shown in Figure 3 and Figure 4.
Consult shown in Figure 5, non-crystal diamond material thereafter then with electrode coupling mutually, forming a negative electrode, and provide a grid bias-voltage that adds.By the electric current that non-crystal diamond material produced then is as measurement and record in addition as shown in Fig. 5.
Certainly, should recognize that above-mentioned explanation only is the application that is to describe theory of the present invention.The modification of countless versions and become can development be come out not breaking away under spirit of the present invention and the category in this skill person by ripe, the therefore spirit according to the present invention modification and the change of doing all belongs within protection scope of the present invention.
Though the present invention is by specific example and is regarded as the most practical most preferred embodiment and is described in detail; for knowing this skill person; modify including but not limited to the change in described size, material, shape, form, function and operational method, assembly and the use, all contain and be placed among the protection of the present invention.
Claims (25)
1, a kind of application of non-crystal diamond material, it is characterized in that: it is applicable to the device of emitting electrons, the device of this emitting electrons is to comprise non-crystal diamond material, electrode and anode, this non-crystal diamond material includes 90% carbon atom, wherein 30% be one the distortion the tetragonal body coordinate in combination, this diamond material is to have the electronics surface of emission, and this electronics surface of emission is to have 10-10, the concavo-convex roughness height of 000 nanometer; This electrode is to combine with this non-crystal diamond material and form a negative electrode; This anode is with the surface of emission of this non-crystal diamond material and mutual opposition, and between being across a vacuum space, this negative electrode adds the energy of a capacity, electronics enters this vacuum space from its surface of emission.
2, the application of non-crystal diamond material according to claim 1, it is characterized in that: the device of this emitting electrons still has a grid, this grid be the position in this vacuum space, and be between this surface of emission and anode, this grid produces an electric field when adding a forward grid voltage.
3, the application of non-crystal diamond material according to claim 2 is characterized in that: this grid is a wire netting.
4, the application of non-crystal diamond material according to claim 1, it is characterized in that: the device of this emitting electrons, still have a low-energy cation in the vacuum space, this is low-yield to be to be enough to reduce to the interelectric repulsive force that is emitted from the electronics surface of emission minimum.
5, the application of non-crystal diamond material according to claim 4 is characterized in that: the low-energy cation of the device of this emitting electrons is to be selected from down at least a in the column element: lithium, sodium, potassium, rubidium, caesium, thulium, beryllium, magnesium, calcium, strontium or barium.
6, the application of non-crystal diamond material according to claim 4 is characterized in that: the low-energy cation of the device of this emitting electrons is the caesium cation.
7, the application of non-crystal diamond material according to claim 1 is characterized in that: the concavo-convex roughness height of the surface of emission of the device of this emitting electrons is 100-1,000 nanometer.
8, the application of non-crystal diamond material according to claim 1 is characterized in that: the concavo-convex matsurface of the device of this emitting electrons is to have most peak values, this peak density be on the surface of emission every square centimeter contain at least one 1,000,000 peaks.
9, the application of non-crystal diamond material according to claim 8 is characterized in that: the peak density of the device of this emitting electrons be on the surface of emission every square centimeter contain at least ten hundred million peaks.
10, the application of non-crystal diamond material according to claim 1 is characterized in that: the carbon atom of the non-crystal diamond material of the device of this emitting electrons has at least 50% to be to be in the same place with the tetragonal body coordinate bond of distortion.
11, the application of non-crystal diamond material according to claim 1 is characterized in that: the energy of the device of this emitting electrons be selected from following at least a: heat energy, luminous energy or electric field energy.
12, the application of non-crystal diamond material according to claim 11 is characterized in that: the energy of the device of this emitting electrons is a heat energy.
13, the application of non-crystal diamond material according to claim 11 is characterized in that: the energy of the device of this emitting electrons is a luminous energy.
14, the application of non-crystal diamond material according to claim 12 is characterized in that: the temperature of the heat energy of the device of this emitting electrons is less than 500 ℃.
15, the application of non-crystal diamond material according to claim 11 is characterized in that: the energy of the device of this emitting electrons is an electric field energy.
16, the application of non-crystal diamond material according to claim 1 is characterized in that: the device of this emitting electrons is in order to as a motor generator.
17, the application of non-crystal diamond material according to claim 1 is characterized in that: the device of this emitting electrons is in order to as a solar cell.
18, the application of non-crystal diamond material according to claim 1 is characterized in that: the device of this emitting electrons is in order to as a cooling device.
19, the application of non-crystal diamond material according to claim 18 is characterized in that: this cooling device is a radiating surface, and this radiating surface cools off an integrated circuit.
20, the application of non-crystal diamond material according to claim 18 is characterized in that: this cooling device cools off a contiguous zone, and makes temperature be lower than 100 ℃.
21, the application of non-crystal diamond material according to claim 1 is characterized in that: this cathode junction is should non-crystal diamond material, in order to strengthen the electronics output of this electrode.
22, the application of non-crystal diamond material according to claim 1 is characterized in that: this cathode junction is should non-crystal diamond material, in order to the service life of this electrode that extends.
23, according to the application of claim 21 or 22 described non-crystal diamond materials, it is characterized in that: this electrode is the some of battery.
24, according to the application of claim 21 or 22 described non-crystal diamond materials, it is characterized in that: this electrode is the some of electric deposition device.
25, according to the application of claim 21 or 22 described non-crystal diamond materials, it is characterized in that: this electrode is the some of light emitting source device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101091441A CN100356495C (en) | 2003-06-30 | 2003-06-30 | Use of non-crystal diamond material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101091441A CN100356495C (en) | 2003-06-30 | 2003-06-30 | Use of non-crystal diamond material |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03148262 Division CN1250451C (en) | 2003-06-30 | 2003-06-30 | Non-crystal diamond material and manufacturing method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1779880A true CN1779880A (en) | 2006-05-31 |
| CN100356495C CN100356495C (en) | 2007-12-19 |
Family
ID=36770139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101091441A Expired - Fee Related CN100356495C (en) | 2003-06-30 | 2003-06-30 | Use of non-crystal diamond material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100356495C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895500A (en) * | 2015-01-26 | 2016-08-24 | 汪乾昌 | Use of cesium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127773A (en) * | 1992-03-16 | 2000-10-03 | Si Diamond Technology, Inc. | Amorphic diamond film flat field emission cathode |
| WO1995012835A1 (en) * | 1993-11-04 | 1995-05-11 | Microelectronics And Computer Technology Corporation | Methods for fabricating flat panel display systems and components |
| US6204595B1 (en) * | 1995-07-10 | 2001-03-20 | The Regents Of The University Of California | Amorphous-diamond electron emitter |
-
2003
- 2003-06-30 CN CNB2005101091441A patent/CN100356495C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895500A (en) * | 2015-01-26 | 2016-08-24 | 汪乾昌 | Use of cesium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100356495C (en) | 2007-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6616495B1 (en) | Filming method of carbon nanotube and the field emission source using the film | |
| CN1707727A (en) | Field emission device and field emission display using the same | |
| CN1192288A (en) | Field electron emission materials and devices | |
| CN1479935A (en) | X-ray generating mechanism using electron field demission cathode | |
| CN1643636A (en) | Field emission devices using modified carbon nanotubes | |
| CN1812038A (en) | Carbon nanotube, electron emitter, electron emission device and manufacture method thereof | |
| US7358658B2 (en) | Amorphous diamond materials and associated methods for the use and manufacture thereof | |
| US6806629B2 (en) | Amorphous diamond materials and associated methods for the use and manufacture thereof | |
| JP3809182B2 (en) | Electron emitting material, method for manufacturing the same, and electron emitting device using the same | |
| KR101251183B1 (en) | Field emission lamp | |
| CN1828802A (en) | Electron emission source, its method of fabrication, an electron emission device using the electron emission source | |
| CN1250451C (en) | Non-crystal diamond material and manufacturing method and application thereof | |
| CN100343164C (en) | Production of non-crystal diamond material | |
| JP2005032638A5 (en) | ||
| CN1779880A (en) | Use of non-crystal diamond material | |
| CN1992142A (en) | Tapered carbon nano tube and electronic source used for the same | |
| TWI636479B (en) | Shaped cathode for a field emission arrangement and method for selecting the shape thereof | |
| CN1290151C (en) | Field emission display device | |
| CN1909162A (en) | Bent grid case acuate type array emitting structural panel display device and its production technique | |
| JP5343531B2 (en) | Electron emitting device, manufacturing method thereof, and surface light emitting device | |
| JP2008053172A (en) | Surface light emitting device | |
| JP2011210439A (en) | Electron emission element, method of manufacturing the same, and surface light emitting element using the electron emission element | |
| JP5406748B2 (en) | Field emission electron source and manufacturing method thereof | |
| JP2005299040A (en) | Expanded carbon fiber, method for producing the same and field emission device and field emission display containing the same | |
| CN1910722A (en) | Electron emission material, method of manufacturing the same, and electron emission element including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |