CN1770575A - Method for making gallium nitride based laser tube core using face-down bonding technique - Google Patents
Method for making gallium nitride based laser tube core using face-down bonding technique Download PDFInfo
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- CN1770575A CN1770575A CN 200410088729 CN200410088729A CN1770575A CN 1770575 A CN1770575 A CN 1770575A CN 200410088729 CN200410088729 CN 200410088729 CN 200410088729 A CN200410088729 A CN 200410088729A CN 1770575 A CN1770575 A CN 1770575A
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Abstract
This invention relates to reverse welding technique to process gallium nitride laser tube core method, which comprises the following steps: growing orderly electrode contact layer, light limit layer, waveguide layer, lighting source area, waveguide layer, light limit layer and electrode contact layer on underlay; etching electrode contacting layer and processing P shape Ohm contacting electrode; reducing underlay thickness; dividing laser tube core; using reverse welding technique to weld divided gallium nitride laser tube core N shape ohm electrode layer and supportive part and metal welding materials together; forming P shape electrode leading hole from supportive part back hole to isolation layer of earth silicon and silicon nitride; coating metal layer on supportive back and leading tube core P shape electrode to form one reverse gallium nitride laser tube core.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of method of utilizing face-down bonding technique to make GaN base laser tube core especially.
Background technology
The GaN of III-V family based compound semiconductor and quantum well structure laser (LD) thereof are in the optical storage density of the information of increase, laser printing, deep-sea communication, fields such as atmospheric environment detection have a wide range of applications, if GaN base laser substitutes present DVD shaven head, its packing density can reach existing 2-3 times, if printer adopts GaN base laser, its resolution can be brought up to 1200dpi from the 600dpi of present standard, there is a window at the deep-sea at blue light range, GaN base laser can be used for carrying out deep-sea detecting and communicating by letter, application has far reaching significance in the national defence field, and blue laser also can be used for the communication of short-range plastics light pricker in addition.Utilize face-down bonding technique to make the gallium nitride laser tube core, can increase heat conduction, reduce the lasing threshold of laser, improve the performance and the life-span of laser.The method that the general now face-down bonding technique that adopts is made GaN base laser tube core is, utilize the contact area of the method formation N type electrode of etching, prepare P type and N type Ohm contact electrode then, and on supporter, prepare corresponding scolder, at last the tube core upside-down mounting is soldered on the supporter.This preparation method's radiating effect is bad, has influenced the service behaviour and the life-span of tube core.
The purpose of this invention is to provide a kind of method of utilizing face-down bonding technique to make GaN base laser tube core, the conduction velocity that this method can further improve heat improves radiating effect, reduces the lasing threshold of laser, improves the performance and the life-span of tube core.
A kind of method of utilizing face-down bonding technique to make GaN base laser tube core of the present invention is characterized in that, comprises the steps:
Step 1: epitaxial growth of gallium nitride N type contact electrode layer successively on dielectric substrate, N type aluminum gallium nitride light limiting layer, n type gallium nitride ducting layer, luminescent active region, P type gallium nitride ducting layer, P type aluminum gallium nitride light limiting layer and P type gallium nitride electrode contact layer;
Step 2: utilize the ion beam etching technology with N type electrode contact zone with cut apart the zone and be etched to the n type gallium nitride contact electrode layer, then at its surface deposition insulation film, and formation P type and N type Ohm contact electrode hole, preparation P type Ohm contact electrode on the P of tube core type gallium nitride electrode contact layer, preparation N type Ohm contact electrode on the n type gallium nitride contact electrode layer;
Step 3: with reducing thin of sapphire substrate;
Step 4: laser tube core is cut apart, formed the tube core of single laser with chamber face and certain chamber length;
Step 5: deposition of silica or insulating silicon nitride separator on supporter, then the corresponding metal welding bed of material of evaporation and tube core P type and N type electrode and; Supporter is divided into the supporter of single laser tube core;
Step 6: utilize face-down bonding technique will cut apart on the P type Ohm contact electrode layer of good GaN base laser tube core and the supporter with the N type Ohm contact electrode layer of the corresponding metal welding bed of material of tube core P electrode size and tube core and supporter on weld together with the corresponding metal welding bed of material of tube core N electrode size;
Step 7: in the relevant position of tube core P electrode, up to dielectric isolation layers such as silicon dioxide or silicon nitrides, dielectric isolation layers such as the silicon dioxide of bottom, hole or silicon nitride are removed, form P type electrode fairlead from the back side perforate of supporter;
Step 8: the back side evaporated metal layer of the supporter after perforate, draw the P type electrode of tube core, form the tube core of the GaN base laser of a upside-down mounting.
Wherein said dielectric substrate is Sapphire Substrate or aluminium oxide or magnesium oxide substrate.
Wherein epitaxially grown successively method is a metallochemistry organic vapor phase deposition method on dielectric substrate.
Wherein reducing thin of sapphire substrate to 70 μ m between the 150 μ m.
Wherein in the fairlead of the back side of supporter perforate formation P type electrode, form metal level, P type electrode is drawn from the back side of supporter.
Wherein P type electrode draw the layer metal be nickel, gold, platinum, chromium, titanium, aluminium and alloy thereof or indium, indium stannum alloy, gold-tin alloy or terne metal, its thickness is between the 50-200 micron.
Wherein the supporter of tube core flip chip bonding is the material of silicon or beryllium oxide or aluminium nitride, diamond high heat conductance.
This method is compared with traditional technology, tube core supporter back side perforate from flip chip bonding, GaN base laser P type electrode is drawn from the back side of tube core supporter, the method of this making tube core is compared with the tube core that traditional face-down bonding technique is made, can improve radiating efficiency, further reduce the lasing threshold of laser, the performance and the life-span of improving laser tube core.
Description of drawings
In order to further specify content of the present invention, below in conjunction with embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the profile of the GaN base laser tube core structure among the present invention;
The laser tube core section of structure that has metal electrode before Fig. 2 flip chip bonding;
Fig. 3 is the sound face figure after tube core upside-down mounting of the present invention is soldered to supporter;
Fig. 4 is the profile that utilizes the tube core of face-down bonding technique making of the present invention.
Embodiment
At first see also shown in Figure 1, this is the profile of a GaN base laser tube core structure, its manufacturing process process is, on Sapphire Substrate 10, utilize MOCVD method epitaxial growth GaNN type contact electrode layer 11, N type AlGaN light limiting layer 12, N type GaN ducting layer 13, luminescent active region 14, P type GaN ducting layer 16, P type AlGaN light limiting layer 16 and P type GaN contact electrode layer 17.Consult shown in Figure 2 again, the wide of the tube core of laser is designed to 250 microns, the size that the structure of design GaN base laser tube core and corresponding tube core are cut apart, utilize the ion beam etching technology with the N type electrode contact zone of design with cut apart the zone and be etched to N type GaN contact electrode layer, be 0.2 micron silicon dioxide insulator film 20 then with PECVD at its surface deposition one layer thickness, and with photoetching and corroding method form wide be 5 μ m the P type and wide be the N type Ohm contact electrode hole 21 and 22 of 100 μ m, method with evaporation, on the P of the tube core that designs type GaN contact electrode layer 18, prepare Ni (0.1 μ m)/Au (0.4 μ m) metal level, and formed P type Ohm contact electrode 23 in 5 minutes at 700 degrees centigrade of alloys, on N type GaN contact electrode layer, prepare Ti (0.1 μ m)/Al (0.4 μ m) metal level, and formed N type Ohm contact electrode 24 in 5 minutes at 500 degrees centigrade of alloys, then Sapphire Substrate is thinned to 100 μ m from the back side with abrasive method with it, utilizes the scribing method laser tube core on the epitaxial wafer to be cut apart the tube core that forms the single laser with chamber face and certain chamber length along cutting apart of the tube core that designs.Consult shown in Figure 3 again, on supporter silicon substrate 30, utilize the PECVD method to deposit the thick silicon dioxide insulator separator 31 of 0.5 μ m, evaporate 0.5 μ m and the corresponding upside-down mounting scolder of tube core P type aspect indium metal 32 and 1.5 μ m and the corresponding upside-down mounting scolder of tube core N type aspect indium metal 33 thereon according to the die size of design again, the single laser tube core upside-down mounting that utilizes face-down bonding technique to be divided into then is soldered on the tube core supporter.Consult shown in Figure 4 at last, relevant position at tube core P electrode, use the reactive ion etching method perforate up to the silicon dioxide insulator separator from the back side of supporter, and remove with the method for chemical corrosion silicon dioxide insulator separator 31 with the bottom, hole, form P electrode fairlead 40, the back side of last supporter after perforate forms the P type electrode that the thick gold-tin alloy 41 of 5 μ m is drawn tube core with method of evaporating, forms a complete GaN base laser tube core with good heat conductive performance.
A kind of process of utilizing flip chip technology to prepare GaN base laser tube core of the present invention is: the structure of utilizing MOCVD method epitaxial growth of gallium nitride base laser on substrates such as sapphire, expose N type contact electrode layer with the method for etching, with silicon dioxide or the silicon nitride film of PECVD method in its surface deposition one deck insulation, and form the P type and the N type electrode contact hole of laser with the method for photoetching and chemical corrosion, with photoetching and evaporation, methods such as sputter are on the P of epitaxial wafer type aspect and N type contact electrode layer, die size according to design prepares P type and N type Ohm contact electrode, with abrasive method or ion milling technology it is thinned to 70 μ m between the 150 μ m, with patterning method or scribing method tube core is separately formed the singulated dies with laser cavity surface and certain chamber length along Cutting Road again; On the tube core supporter, use plasma P ECVD method evaporation layer of silicon dioxide or insulating silicon nitride separator, die size according to design forms on the supporter of silicon dioxide or insulating silicon nitride separator and the tube core P type and the corresponding metal welding bed of material of N type contact electrode face with methods such as photoetching and evaporations then, utilizes face-down bonding technique that the singulated dies upside-down mounting is soldered on the supporter; Relevant position at tube core P electrode, from the back side of supporter with dry etching or wet etching method perforate up to dielectric isolation layers such as silicon dioxide or silicon nitrides, then dielectric isolation layers such as silicon dioxide bottom the hole or silicon nitride are removed with the method for chemical corrosion, form P electrode fairlead, the back side evaporated metal layer of the supporter after perforate is drawn the P type electrode of tube core, forms the tube core of a complete laser with fine heat conductivility.
The invention provides a kind of method of utilizing flip chip technology to prepare GaN base laser, the method of this making GaN base laser tube core is compared with the method that traditional face-down bonding technique is made GaN base laser tube core, can further improve heat conduction, reduce the lasing threshold of laser, improve the performance and the life-span of laser tube core.
Claims (7)
1, a kind of method of utilizing face-down bonding technique to make GaN base laser tube core is characterized in that, comprises the steps:
Step 1: epitaxial growth of gallium nitride N type contact electrode layer successively on dielectric substrate, N type aluminum gallium nitride light limiting layer, n type gallium nitride ducting layer, luminescent active region, P type gallium nitride ducting layer, P type aluminum gallium nitride light limiting layer and P type gallium nitride electrode contact layer;
Step 2: utilize the ion beam etching technology with N type electrode contact zone with cut apart the zone and be etched to the n type gallium nitride contact electrode layer, then at its surface deposition insulation film, and formation P type and N type Ohm contact electrode hole, preparation P type Ohm contact electrode on the P of tube core type gallium nitride electrode contact layer, preparation N type Ohm contact electrode on the n type gallium nitride contact electrode layer;
Step 3: with reducing thin of sapphire substrate;
Step 4: laser tube core is cut apart, formed the tube core of single laser with chamber face and certain chamber length;
Step 5: deposition of silica or insulating silicon nitride separator on supporter, then the corresponding metal welding bed of material of evaporation and tube core P type and N type electrode and; Supporter is divided into the supporter of single laser tube core;
Step 6: utilize face-down bonding technique will cut apart on the P type Ohm contact electrode layer of good GaN base laser tube core and the supporter with the N type Ohm contact electrode layer of the corresponding metal welding bed of material of tube core P electrode size and tube core and supporter on weld together with the corresponding metal welding bed of material of tube core N electrode size;
Step 7: in the relevant position of tube core P electrode, up to dielectric isolation layers such as silicon dioxide or silicon nitrides, dielectric isolation layers such as the silicon dioxide of bottom, hole or silicon nitride are removed, form P type electrode fairlead from the back side perforate of supporter;
Step 8: the back side evaporated metal layer of the supporter after perforate, draw the P type electrode of tube core, form the tube core of the GaN base laser of a upside-down mounting.
2, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 1 is characterized in that wherein said dielectric substrate is Sapphire Substrate or aluminium oxide or magnesium oxide substrate.
3, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 1 is characterized in that wherein epitaxially grown successively method is a metallochemistry organic vapor phase deposition method on dielectric substrate.
4, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 1 is characterized in that, wherein reducing thin of sapphire substrate to 70 μ m between the 150 μ m.
5, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 1 is characterized in that, wherein forms metal level in the fairlead of the back side of supporter perforate formation P type electrode, and P type electrode is drawn from the back side of supporter.
6, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 5, it is characterized in that, wherein P type electrode draw the layer metal be nickel, gold, platinum, chromium, titanium, aluminium and alloy thereof or indium, indium stannum alloy, gold-tin alloy or terne metal, its thickness is between the 50-200 micron.
7, the method for utilizing face-down bonding technique to make GaN base laser tube core according to claim 1 is characterized in that, wherein the supporter of tube core flip chip bonding is the material of silicon or beryllium oxide or aluminium nitride, diamond high heat conductance.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882124A (en) * | 2012-10-11 | 2013-01-16 | 长春理工大学 | Semiconductor laser chip structure suitable for being welded reversely |
| CN103001119A (en) * | 2011-09-16 | 2013-03-27 | 山东浪潮华光光电子有限公司 | Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip |
| WO2014101877A1 (en) * | 2012-12-31 | 2014-07-03 | Huawei Technologies Co., Ltd. | Silicon-on-insulator platform for integration of tunable laser arrays |
| CN104538304A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of gallium-nitride-based high-electron-mobility transistor of flip-chip structure |
| CN108718030A (en) * | 2018-04-24 | 2018-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of low resistance, nitride-based semiconductor micro-cavity laser structure of low thermal resistance and preparation method thereof |
| CN111129941A (en) * | 2019-11-21 | 2020-05-08 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001168442A (en) * | 1999-12-07 | 2001-06-22 | Sony Corp | Method of manufacturing semiconductor laser element, installation substrate, and support substrate |
| JP2002043677A (en) * | 2000-07-25 | 2002-02-08 | Nec Corp | Optical device mounting structure and method therefor |
| JP3679720B2 (en) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | Nitride semiconductor device and method for forming nitride semiconductor |
| JP2002374029A (en) * | 2001-06-15 | 2002-12-26 | Sony Corp | Multibeam semiconductor laser device |
| KR100958054B1 (en) * | 2003-03-08 | 2010-05-13 | 삼성전자주식회사 | Submount of semiconductor laser diode, manufacturing method thereof and semiconductor laser diode assembly adopting the same |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103001119A (en) * | 2011-09-16 | 2013-03-27 | 山东浪潮华光光电子有限公司 | Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip |
| CN103001119B (en) * | 2011-09-16 | 2015-06-24 | 山东浪潮华光光电子有限公司 | Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip |
| CN102882124A (en) * | 2012-10-11 | 2013-01-16 | 长春理工大学 | Semiconductor laser chip structure suitable for being welded reversely |
| WO2014101877A1 (en) * | 2012-12-31 | 2014-07-03 | Huawei Technologies Co., Ltd. | Silicon-on-insulator platform for integration of tunable laser arrays |
| CN104538304A (en) * | 2014-12-24 | 2015-04-22 | 中国科学院半导体研究所 | Manufacturing method of gallium-nitride-based high-electron-mobility transistor of flip-chip structure |
| CN108718030A (en) * | 2018-04-24 | 2018-10-30 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | A kind of low resistance, nitride-based semiconductor micro-cavity laser structure of low thermal resistance and preparation method thereof |
| CN111129941A (en) * | 2019-11-21 | 2020-05-08 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
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