CN1770421A - Analysis method - Google Patents
Analysis method Download PDFInfo
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- CN1770421A CN1770421A CN 200410092226 CN200410092226A CN1770421A CN 1770421 A CN1770421 A CN 1770421A CN 200410092226 CN200410092226 CN 200410092226 CN 200410092226 A CN200410092226 A CN 200410092226A CN 1770421 A CN1770421 A CN 1770421A
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- pattern
- analyzed
- analytical method
- reference pattern
- analytical
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- 238000004458 analytical method Methods 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 7
- 229920002521 macromolecule Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000005430 electron energy loss spectroscopy Methods 0.000 claims description 2
- 238000003701 mechanical milling Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 241000252073 Anguilliformes Species 0.000 claims 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims 1
- 238000000149 argon plasma sintering Methods 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 238000003696 structure analysis method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
This invention relates to one analysis method, which comprises the following steps: A, providing one baseboard with at least one film layer covering on the pattern and reference pattern; then, removing part film layer to the exposed reference pattern to position non-exposed pattern to be analyzed; finally analyzing the positioned pattern to avoid Damage on the pattern.
Description
Technical field
The present invention relates to a kind of analytical method, particularly relate to the failure analysis methods (failure analysis) of wafer in a kind of manufacturing process of integrated circuit.
Background technology
In recent years, development along with the semiconductor integrated circuit manufacturing technology, the quantity of contained element constantly increases in the chip, size of component is also constantly dwindled because of the lifting of integration, the line width of producing online use by inferior micron (sub-micron) even entered 0.11 micron more scope of fine dimension.Also therefore, along with the semiconductor element size is constantly dwindled, make must double the bottom conductor special pattern do accurate cross section and analyze and more and more be not easy.
The quite consuming time and poor accuracy of general existing technology, for example the structural analysis of semiconductor element bottom figure in the technology behind the tungsten deposit metal films is wanted the figure analyzed because of cannot see at top view (Top View), make and do the structural analysis sampling or utilize focused ion beam (Focused Ion Beam, do not know that where to start when FIB) cutting test piece, generally be to use wrong (the trial and error) method of attempting to seek special pattern to be analyzed.
In addition, return after the figure of shelling this level more comprehensively the method that special pattern is carried out the cross-sectional structure analysis have consuming time, and the artificial defect that produces when easily having back stripping or when doing the preparation of cross section sample to the shortcoming of the destruction (damage) of this patterned surface generation.
Summary of the invention
In view of this,, the object of the present invention is to provide a kind of accurate structure analysis method, can provide fast, analyze and avoid the destruction of figure accurately in order to address the above problem.
For reaching above-mentioned purpose, the invention provides a kind of accurate structure analysis method.At first, provide a substrate, wherein be formed with a plurality of retes on the substrate.A plurality of retes or substrate comprise a layer to be analyzed, and layer to be analyzed comprises a zone to be analyzed, and a pattern to be analyzed is arranged in zone to be analyzed.Remove to be analyzed extra-regional one and pre-local remove rete on the diaphragm area to a reference pattern that exposes layer to be analyzed.According to reference pattern as a reference, orient unexposed pattern to be analyzed.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A～1B is the schematic flow sheet of first embodiment of the invention along the section side.
Fig. 2 A～2C be first embodiment of the invention along on look the schematic flow sheet of side.
Fig. 3 A is the top view of a local etching method of first embodiment of the invention.
Fig. 3 B is the top view of another local etching method of first embodiment of the invention.
Fig. 4 A is the schematic diagram of TEM test piece alignment error.
Fig. 4 B is the section of structure that TEM test piece alignment error is shone.
Fig. 5 A is the correct schematic diagram of aiming at of TEM test piece.
Fig. 5 B is the correct section of structure that is shone of aiming at of TEM test piece.
Fig. 6 is the implementing procedure figure of first embodiment of the invention.
The simple symbol explanation
100～substrate; 102～zone to be analyzed;
104～rete; 106～surface;
204～pattern to be analyzed; 206～reference pattern;
208～zone to be analyzed; 210～pre-local the diaphragm area that removes;
214～extension straight line; 302～the second substrates;
306～macromolecule mask; 402～contact hole;
404～sample thin film; 406～rear structure;
408～ghost image.
Embodiment
[first embodiment]
Figure 1A～1B is the schematic flow sheet of first embodiment of the invention section side.Look the schematic flow sheet of side on Fig. 2 A～2C first embodiment of the invention.Please refer to Figure 1A and Fig. 2 A, wherein Fig. 2 A is the top view of Figure 1A.At first, provide a substrate 100.In the present embodiment, can include a plurality of retes or any semiconductor and thin-film transistor element on the substrate 100 or in the substrate 100.General IC makes and is used as substrate 100 with semi-conducting materials such as for example silicon, but other LCD industry, for example with glass or resin as the structure of substrate 100 materials, also can use analytical method of the present invention.Above-mentioned rete can be the formed metallic film of method, dielectric film or the semiconductive thin film that adopts any film forming, and element can be via formed any element of existing skill or patterns such as deposition, etching or injections.Therefore shown in Fig. 2 A, owing to be coated with a plurality of retes on the substrate, can't judge in the retes or the position of pattern in the substrate by surface 106.
In the above-mentioned in the present embodiment rete or the pattern in the substrate is to have the pattern that certain regularity is arranged.For instance, above-mentioned pattern can be the contact hole (contact hole) of semiconductor element multilayer on-line composition, and this contact hole has certain rules alignment characteristics (for example: along certain axially-aligned, or the distance between contact hole and contact hole has certain rules).Shown in Figure 1A, regional 102 (zone to be analyzed of present embodiment is hole but does not limit in this) to be analyzed in the pattern of semiconductor element need be carried out accident analysis (Failure analysis).For instance, a hole 102 in second intermediate layer of semiconductor element need carry out accident analysis, but by storehouse thereon a plurality of retes 104 (for example metal level of tungsten or aluminium and for example silica or the dielectric layer of silicon nitride) is arranged.Also therefore be difficult for finding this zone 102 to analyze very accurately by surface 106 judgements.
Shown in Fig. 2 B, layer to be analyzed comprises that pattern 204 to be analyzed and reference pattern 206, pattern to be analyzed are arranged in the to be analyzed regional 208 of layer to be analyzed, and reference pattern is positioned at beyond to be analyzed regional 208.In the present embodiment, reference pattern 206 is positioned at same one deck with pattern 204 to be analyzed, but the present invention is not limited to this, easily says it, and reference pattern 206 can be positioned at different one decks with pattern 204 to be analyzed.
Next, remove to be analyzed regional 208 outer pre-parts and remove the part rete of diaphragm area 210 to a reference pattern 206 that exposes layer to be analyzed.Just part film on the diaphragm area 210 is removed in the pre-part that removes shown in 1B and 2B figure, to exposing for example reference pattern 206 of a plurality of contact holes.At this, reference pattern 206 has certain rules, for example be positioned at online and continuous arrangement always, and the distance between contact hole also has certain rules.And be arranged in to be analyzed regional 208 pattern to be analyzed 204 owing to be coated with a plurality of retes on the surface, can't find out the pattern form of pattern 204 to be analyzed by top view, and the position.
In the present embodiment, above-mentionedly remove pre-part to remove the method for the part rete of diaphragm area can be for example with focused ion beam (Focused Ion Beam, the method for local membrane removal FIB).That is use the argon ion of ion beam as diameter 1-2cm, or be the ion exposure source with gallium (Ga), electric weight and quality that this ion beam is bigger than electronics tool, when exposing on the solid sample, it can cause a series of bump and energy delivery, and spill neutral atom, ion, electronics and electromagnetic wave in phenomenon such as test piece surface generating gasification, ionization, also can cause phenomenons such as lattice damage, atom mixing when bump imports test piece than inside into, last incident ion injects test piece inside.Utilize this specific character, directly on above-mentioned film, come membrane removal with FIB.
In addition, the method for above-mentioned local membrane removal can also be used the mask definition, and the subsequent etch method.As shown in Figure 3A,, hide the zone of desire protection, expose pre-part and remove diaphragm area 210 if large-area local membrane removal can utilize second substrate 302 (for example chip) that cut.Or shown in Fig. 3 B, with macromolecule as mask 306 (for example with unusual pen, or the projection pen line is as mask), with the zone of protectiveness protection.Afterwards, substrate is inserted in the etching machine, adjust etching parameter and carry out local membrane removal.
What is more, the chemical mechanical milling method (CMP) that above-mentioned part tilts abrasive disk except that film method can also adopt, or calipers polishing (Dimple) are in order to reach the effect of local membrane removal.
Can also adopt a laser membrane-removing method in addition, high-octane laser beam irradiation is carried out membrane removal in the zone of desiring membrane removal.Above-mentioned give an example remove film method, can implement according to this with the user, but not be limited to above-mentioned method.
Therefore, with the reference pattern 206 that exposes after the membrane removal as a reference, can orient unexposed pattern to be analyzed 204.This especially exemplified by example in the middle of, shown in Fig. 2 C, just connect a straight line 214 and extend in to be analyzed regional 208, and extend on straight line 214 at this with the contact hole of reference pattern 206, according to the rule characteristic of contact hole mutual distance, orient the position to be analyzed of pattern 204 to be analyzed.Further, analyze, detect, carry out accident analysis according to the position to be analyzed of orienting.
[second embodiment]
The part of second embodiment is removed film method and is same as first embodiment, and unique difference is the characteristic that the reference pattern that exposes after unexposed pattern to be analyzed and the membrane removal does not have rule.That is, be difficult for by reference pattern orienting pattern to be analyzed via simple reckoning.Therefore, utilize the reference pattern that exposes after the membrane removal to be reference in the present embodiment, be aided with and include pattern to be analyzed and reference pattern layout patterns (CAD layout), extrapolate pattern to be analyzed position to be analyzed via the comparison of layout patterns and reference pattern and analyze, so can find out zone to be analyzed more accurately and analyze.
When making test piece of penetration type electron microscope (TEM sample), if pattern to be analyzed is covered by for example rete, can use above-mentioned first embodiment or the method for second embodiment, remove the part rete to exposing reference pattern, and with reference pattern as a reference, orient unexposed pattern to be analyzed.
Fig. 4 A is the schematic diagram of TEM test piece alignment error.Fig. 4 B is the section of structure that TEM test piece alignment error is shone.Please refer to Fig. 4 A,, accurately contact hole 402 is not placed sample thin film 404 centers between the TEM line of cut, shown in Fig. 4 B, promptly can produce ghost images 408 phenomenons because of the structure 406 at contact hole 402 rears as shown in the figure if when making the TEM test piece.Fig. 5 A is the correct schematic diagram of aiming at of TEM test piece.Fig. 5 B is the correct section of structure that is shone of aiming at of TEM test piece.Please refer to Fig. 5 A, use accurate positioning method of the present invention, when the TEM specimen preparation, can accurately contact hole 402 be placed sample thin film 404 centers, because the cutting test piece does not have the structure that comprises other rear or the place ahead, therefore the section of contact hole 402 is unaffected as can be seen, so is impossible ghost image phenomenon (shown in Fig. 5 B).
Implementing procedure of the present invention as shown in Figure 6.At first provide one to be formed with the substrate S600 that at least one rete covers a pattern to be analyzed and a reference pattern.Next, carry out local membrane removal, remove the above-mentioned rete of part to exposing reference pattern S602.According to reference pattern as a reference, orient unexposed to be analyzed pattern S604 thereafter.Then, preparation test piece S606.The test piece S608 that ultimate analysis prepares.The method of the analysis test piece of present embodiment can be to be applied in semiconductor technology or any analytical method of LCD technology, for example can utilize sweep electron microscope Scanning Electron Microscope (SEM), transmission electron microscope Transmission Electron Microscope (TEM), scanning transmission electron microscope Scanning Transmission Electron Microscope (STEM), or focused ion beam Focused Ion Beam (FIB) waits and carries out fractograph analysis (optionally making its test piece).Also can arrange in pairs or groups again X-ray energy spectrometer instrument Energy dispersive X-ray spectrometry (EDX), electron energy analyzer Electron energy loss spectrometry (EELS), Ou Jie electron microscope Auger etc. carry out the analysis of surface characteristic, material or element.
Therefore, precision architecture analytical method provided by the invention and analysis test piece can provide fast, analyze and avoid the destruction of figure accurately.And can overcome subsequent analysis or specimen preparation because of the not accurate ghost image phenomenon that produces of contraposition.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (18)
1, a kind of analytical method comprises the following steps:
One substrate is provided, wherein is formed with at least one rete on this substrate and covers a pattern to be analyzed and a reference pattern;
Remove this rete of part to exposing this reference pattern;
According to this reference pattern as a reference, orient unexposed this pattern to be analyzed; And
The pattern to be analyzed of having good positioning is analyzed.
2, analytical method as claimed in claim 1, wherein this pattern to be analyzed and this reference pattern are the continuous pattern that rule is arranged.
3, analytical method as claimed in claim 1, wherein this pattern to be analyzed and this reference pattern comprise the contact hole that a plurality of continuous rules are arranged.
4, analytical method as claimed in claim 3, wherein those contact holes are positioned at online always.
5, analytical method as claimed in claim 1, the method that wherein removes those retes is the method with the local membrane removal of focused ion beam.
6, analytical method as claimed in claim 1, wherein this removes the chemical mechanical milling method of method for an abrasive disk is tilted of those retes.
7, analytical method as claimed in claim 1, wherein this method that removes those retes is a calipers polishing.
8, analytical method as claimed in claim 1, wherein this method that removes those retes is an engraving method.
9, analytical method as claimed in claim 8, wherein this engraving method comprises with a macromolecule layer as mask covering layer to be analyzed top.
10, analytical method as claimed in claim 8, wherein this engraving method comprises with a chip that cut as mask covering layer to be analyzed top.
11, analytical method as claimed in claim 1, wherein this method that removes those retes is a laser membrane-removing method.
12, analytical method as claimed in claim 1, wherein this pattern to be analyzed and this reference pattern are the pattern of irregular arrangement.
13, analytical method as claimed in claim 12, wherein this step of orienting unexposed this pattern to be analyzed comprises and utilizes one to include a layout patterns of this pattern to be analyzed and this reference pattern and the comparison of this reference pattern to extrapolate the position of this pattern to be analyzed.
14, analytical method as claimed in claim 1, wherein the step that the pattern to be analyzed of having good positioning is analyzed comprises that with this substrate manufacture be a test piece, and analyzes this test piece, wherein this pattern to be analyzed is arranged in this test piece.
15, analytical method as claimed in claim 1, wherein the step that the pattern to be analyzed of having good positioning is analyzed adopts sweep electron microscope, transmission electron microscope or scanning transmission electron microscope to carry out fractograph analysis.
16, analytical method as claimed in claim 15, wherein this analytical method also comprises with analytical instrument (EDX), high parsing transmission electron microscope (EELS), electronic spectrograph (Auger), Huo Shi changes infrared spectrometer (FTIR) or X-ray light scattering apparatus (XPS) carries out the analysis of surface characteristic, material or element.
17, analytical method as claimed in claim 1, wherein this pattern to be analyzed and this reference pattern are positioned at same one deck.
18, analytical method as claimed in claim 1, wherein this pattern to be analyzed and this reference pattern are positioned at different layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100922265A CN100399530C (en) | 2004-11-03 | 2004-11-03 | Analysis method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100922265A CN100399530C (en) | 2004-11-03 | 2004-11-03 | Analysis method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1770421A true CN1770421A (en) | 2006-05-10 |
| CN100399530C CN100399530C (en) | 2008-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100922265A Expired - Fee Related CN100399530C (en) | 2004-11-03 | 2004-11-03 | Analysis method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779725A (en) * | 2011-05-11 | 2012-11-14 | 南亚科技股份有限公司 | Method for obtaining a layout design of an integrated circuit |
| CN104392902A (en) * | 2014-11-03 | 2015-03-04 | 中国科学院物理研究所 | Method for positioned cutting multi-walled carbon nanotubes |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100197114B1 (en) * | 1995-07-19 | 1999-06-15 | 김영환 | 3 dimesion inspection method of layer defect for memory device |
| US5821549A (en) * | 1997-03-03 | 1998-10-13 | Schlumberger Technologies, Inc. | Through-the-substrate investigation of flip-chip IC's |
-
2004
- 2004-11-03 CN CNB2004100922265A patent/CN100399530C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779725A (en) * | 2011-05-11 | 2012-11-14 | 南亚科技股份有限公司 | Method for obtaining a layout design of an integrated circuit |
| CN102779725B (en) * | 2011-05-11 | 2016-03-02 | 南亚科技股份有限公司 | Obtain the method for layout design of integrated circuit |
| CN104392902A (en) * | 2014-11-03 | 2015-03-04 | 中国科学院物理研究所 | Method for positioned cutting multi-walled carbon nanotubes |
| CN104392902B (en) * | 2014-11-03 | 2017-07-28 | 中国科学院物理研究所 | The method of location cutting multi-walled carbon nanotube |
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| CN100399530C (en) | 2008-07-02 |
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