CN1770019A - H2O plasma for simultaneous resist removal and charge releasing - Google Patents
H2O plasma for simultaneous resist removal and charge releasing Download PDFInfo
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- CN1770019A CN1770019A CN200510079870.3A CN200510079870A CN1770019A CN 1770019 A CN1770019 A CN 1770019A CN 200510079870 A CN200510079870 A CN 200510079870A CN 1770019 A CN1770019 A CN 1770019A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The present invention relates to a method for stripping photo resist layer from base plate with in-situ style, which utilizes H2O plasma recipe to substantially prevent charges from accumulating on the substrate or wafer during stripping of the layer of resist. Because the charge accumulation on the wafer surface with in-situ style at same time that the wafer stripping photo resist by using the method stripping photo resist and releasing charge, comparing with other previous process, the method of the invention advantages of being simple and efficient, greatly reducing manufacture time, energy and cost.
Description
Technical field
The present invention relates to a kind of method for making of semiconductor element, particularly relate to a kind of method that removes photoresistance from the wafer simultaneously and discharge electric charge.
Background technology
In the manufacture process of semiconductor element, normally be used as the light shield of etched wafer lower floor by the photoresist design layer of photolithography definition.Photoresist layer after the etching for example is photoresistance or electron beam photoresistance (E-Beam Resist), normally is removed in the oxygen plasma manufacture.In this oxygen plasma manufacture, wafer is that to be placed in that photoresistance divests deposition chamber and feed Main Ingredients and Appearance be the etching gas prescription (Recipe) of oxygen.The etching gas of this oxygen more can comprise other material, for example is H
2O steam and a spot of nitrogen.The gaseous ion electricity slurry that mainly comprises oxygen is formed on the top of wafer and is used for removing photoresist layer.
Illustrate as schematically shown in Figure 1, because oxygen base (O
2Radicals) negative electricity characteristic removes in the processing procedure at the photoresistance based on oxygen electricity slurry, and oxygen base ion has the height tendency of the electronics in the seizure electricity slurry, and this can cause low relatively electron density and cause the oxygen electricity of inhomogeneous space distribution to starch.The oxygen electricity slurry of this inhomogeneous space distribution can cause electric charge successively and be accumulated on the wafer, electric charge accumulation on the wafer then can cause some defective, include connection pad pitting (Pad Pitting), Jia Fanni metal erosion (GalvanicMetal Corrosion), tungsten corrosion (Tungsten Dredging) and inferior gate oxide etc., so be not limited thereto.
Therefore, but be starved of a kind of essence and eliminate the method that the photoresistance of electric charge accumulation on the wafer removes.
This shows that the method for making of above-mentioned conventional semiconductor element obviously still has inconvenience and defective, and demands urgently further being improved in manufacture method and use.The problem that exists for the method for making that solves semiconductor element, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and general manufacture method does not have appropriate manufacture method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of method for making of new semiconductor element, just become the current industry utmost point to need improved target.
Because the defective that the method for making of above-mentioned conventional semiconductor element exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and cooperate the utilization of studying the science, actively studied innovation, in the hope of founding a kind of new use H
2O electricity slurry removes photoresistance simultaneously and discharges the method for electric charge, can improve the method for making of general conventional semiconductor element, makes it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the defective that the method for making of conventional semiconductor element exists, and a kind of method that removes photoresistance and discharge electric charge new the time is provided, use and use H
2O electricity slurry removes photoresistance, but essence reduces the accumulation of electric charge on crystal column surface, thereby thereby the problem that has solved the electric charge accumulation defective that causes be suitable for practicality more.
Another object of the present invention is to, a kind of method that removes photoresistance simultaneously and discharge electric charge is provided, use critical mode and use H
2O electricity slurry can save known another H
2O toasts processing procedure (BakingProcess), thus, can significantly reduce time, the energy and the cost of manufacturing, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.Remove photoresist layer simultaneously and go electric charge to use the method that prevents this substrate charging according to a kind of of the present invention's proposition from substrate, it may further comprise the steps at least: put this substrate in a reaction chamber; Feed a gas to this reaction chamber, wherein this gas has a pressure, and comprises a H at least
2The O reactant, this H
2It is a dividing potential drop of 70% that the O reactant has essence at least; And in this reaction chamber, form an electricity slurry to remove this photoresist layer.
The object of the invention to solve the technical problems also adopts following technical measures further to realize.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging, comprise more at least from substrate: this pressure of adjusting this gas to essence between 0.1 Bristol and 10 Bristols.
Aforementionedly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said photoresist layer comprises at least and is selected from a group that is made up of photoresistance and electron beam photoresistance.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said substrate more comprises a metal level, and at least partly this photoresist layer is positioned on this metal level.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said metal level comprises the metal nitride of an aluminium base or tungsten base.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said substrate more comprises a metal level and at least partly is positioned at a dielectric layer on this metal level that at least partly this photoresist layer is positioned on this dielectric layer.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said metal level comprises metal nitride and this dielectric layer aluminium base or the tungsten base and comprises a silicon oxynitride.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said gas more comprises a non-reactant.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said non-reactant comprises at least and is selected from a group that is made up of argon gas, helium and above-mentioned combination.
Aforesaidly remove photoresist layer simultaneously and go electric charge to use to prevent the method for this substrate charging from substrate, wherein said gas more comprises a fluorine-based reactant.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
In order to achieve the above object, the present invention proposes a kind of method that removes photoresistance simultaneously and discharge electric charge, and its step comprises at least puts substrate in reaction chamber, feeds gas to reaction chamber, and wherein gas has a pressure, and comprises a H at least
2O reactant (Reactive Species), H
2It is a dividing potential drop of 70% that the O reactant has essence at least, and is released in the free electron in the reaction chamber, to form an electricity slurry in reaction chamber.
According to a preferred embodiment of the present invention, the pressure essence of above-mentioned gas is between 0.1 Bristol and 10 Bristols.
According to a preferred embodiment of the present invention, above-mentioned gas more comprises a non-reactant, for example is argon gas, helium and above-mentioned combination.
According to a preferred embodiment of the present invention, above-mentioned gas more comprises a fluorine-based reactant.
Use the above-mentioned method that removes photoresistance simultaneously and discharge electric charge, owing to be to carry out photoresistance when divesting processing procedure at wafer, reduce the accumulation of electric charge on the crystal column surface simultaneously in critical mode, so the present invention compares with other conventional process, the used method of the present invention is not only simple relatively and efficient, more significantly reduces manufacturing time, the energy and cost.
Via as can be known above-mentioned, the invention relates to that a kind of mode with critical (In-Situ) divests the method for photoresist layer from substrate or wafer, it is to utilize a H
2O electricity slurry formula (Recipe) can prevent substantially that electric charge is accumulated on substrate or the wafer when photoresistance divests.
In sum, the use H that the present invention is special
2O electricity slurry removes photoresistance simultaneously and discharges the method for electric charge, and a kind of method that removes photoresistance simultaneously and discharge electric charge is provided, and uses and uses H
2O electricity slurry removes photoresistance, but essence reduces the accumulation of electric charge on crystal column surface, thereby has solved the problem of the electric charge accumulation defective that causes.In addition, the invention provides a kind of method that removes photoresistance simultaneously and discharge electric charge, use critical mode and use H
2O electricity slurry can save known another H
2O toasts processing procedure (BakingProcess), thus, can significantly reduce time, the energy and the cost of manufacturing.It has above-mentioned many advantages and practical value, and in class methods, do not see have similar design to publish or use and really genus innovation, no matter it is all having bigger improvement on method or on the function, have large improvement technically, and produced handy and practical effect, and have the multinomial effect of enhancement than the method for making of conventional semiconductor element, thus be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 illustrates known photoresistance based on oxygen plasma to remove the synoptic diagram that method is caused the accumulation of crystal column surface electric charge;
Fig. 2 is the synoptic diagram that illustrates the typical electrical slurry reaction chamber that is used for implementing the inventive method;
Fig. 3 is the process flow diagram that illustrates method step of the present invention;
Fig. 4 illustrates the present invention with H
2O electricity slurry is that main photoresistance removes the synoptic diagram that method causes the crystal column surface electric charge to discharge;
Fig. 5 A～Fig. 5 C illustrates to use known oxygen electricity slurry formula and H of the present invention
2O electricity slurry formula carries out the crystal column surface charge pattern after photoresistance divests;
Fig. 6 A～Fig. 6 B is to use known oxygen electricity slurry formula to carry out being defined in after photoresistance divests the optical microscope photograph of the metallic pad on the wafer;
Fig. 7 A～Fig. 7 B is to use H of the present invention
2O electricity slurry formula carries out being defined in after photoresistance divests the optical microscope photograph of the metallic pad on the wafer;
Fig. 8 A illustrates to use another H
2O baking processing procedure tackles the schematic flow sheet of the conventional process of tungsten etching problem;
Fig. 8 B illustrates to use H of the present invention
2The photoresistance process for stripping of O electricity slurry solves the schematic flow sheet of the typical processes of tungsten etching problem;
Fig. 9 A illustrates the preceding typical crystal column surface charge pattern of electric charge;
Fig. 9 B illustrates in critical mode to carry out another known H on wafer
2Crystal column surface charge pattern behind the O baking processing procedure; And
Fig. 9 C illustrates in critical mode to carry out H on wafer
2O electricity slurry removes the crystal column surface charge pattern behind the electric charge processing procedure.
100: in reaction chamber, place a wafer 110: feed process gas to reaction chamber
120: in reaction chamber, produce radio frequency 130: in reaction chamber, discharge free electron
200: electricity slurry reaction chamber 210: shell
220: crystal wafer platform 230: the gas access nozzle
240: gas access 260: waste gas outlet
270: vacuum pumps 280: substrate or wafer
282: photoresist layer 284: process gas
290:H
2O electricity slurry
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to the use H of foundation the present invention proposition
2O electricity slurry removes photoresistance simultaneously and discharges its embodiment of method, method, step, feature and the effect thereof of electric charge, describe in detail as after.
The object of the present invention is to provide a kind of remove photoresist layer but do not have electric charge essence from substrate or wafer in critical mode be accumulated in method on substrate or the wafer.In the present embodiment, use H
2The electric slurry formula of O prevents that with essence when removing photoresist layer electric charge (for example positive charge) is accumulated on substrate or the wafer.Divest in the processing procedure at photoresistance, use H
2The electric slurry formula of O, can suppress the electric charge accumulation increases caused electrochemical issues with electric charge, includes connection pad pitting, Jia Fanni metal erosion, tungsten corrosion and inferior gate oxide etc., so is not limited thereto.
This method is to carry out in electricity slurry reaction chamber, for example traditional photoresistance stripping chamber, electric paste etching reactor or other suitable electricity slurry reaction chamber.Fig. 2 illustrates the illustration electricity slurry reaction chamber 200 that is applied to method of the present invention, comprises the shell 210 of definition electricity slurry reaction chamber 200.Crystal wafer platform 220 is to be arranged in electricity slurry reaction chamber 200, substrate or wafer that desire is handled are to be positioned on this crystal wafer platform 220, the gas access nozzle 230 of shower head (shower head) shape is the top that is positioned at crystal wafer platform 220, reacting gas enters electricity slurry reaction chamber 200 via the gas access 240 that is communicated to gas access nozzle 230, and the waste gas outlet 260 that is connected to vacuum pumps 270 is to be used for that electricity is starched reaction chamber 200 to vacuumize, electric field generator (not shown) is to be used for producing an enough big electric field in electricity slurry reaction chamber 200, so that the process gas that flows in this electricity slurry reaction chamber 200 can dissociate and ionization, the electricity slurry is to use the field emission that for example causes from electricity slurry reaction chamber 200 interior negative bias electrodes, the free electron that discharges in electricity slurry reaction chamber 200 or radiate comes initialization, in the present embodiment, be used for producing H
2The electric field of O electricity slurry can be in the scope of microwave frequency, and the watt level of this microwave electric field is that essence is between 100 watts to 10000 watts.
Please refer to Fig. 2 and process flow diagram shown in Figure 3, about method of the present invention, at first in step 100, in electricity slurry reaction chamber substrate or wafer 280 are placed on the crystal wafer platform 220, this substrate or wafer 280 can be made up of semiconductor material, for example silicon.Substrate or wafer 280 include formation photoresist layer 282 thereon, and this photoresist layer 282 comprises for example photoresistance or electron beam photoresistance at least, and photoresist layer 282 at least partly is positioned on the metal level of substrate or wafer 280; Or at least partly be positioned on the dielectric layer of substrate or wafer 280 (dielectric layer at least partly is positioned on the metal level of substrate or wafer 280), metal level comprises metal nitride for example aluminium base or the tungsten base at least, and dielectric layer comprises silicon oxynitride or other dielectric material at least.Basically, substrate or wafer 280 have just finished etch process, and wherein using photoresist layer to be used as is metal level or the dielectric layer that light shield comes patterning lower floor.
In step 110, under pressure via gas access 240 and gas access nozzle 230, the process gas 284 that will comprise one or more chemical substance is conveyed into to electricity slurry reaction chamber 200.The electric field institute ionization that this one or more chemical substance is produced in the reaction chamber.This one or more chemical substance comprises H at least
2O, argon gas, helium, fluorine-based material and above-mentioned combination, wherein H
2O and fluorine-based material and above-mentioned combination are to comprise reactant at least, and argon gas, helium and above-mentioned combination are non-reactants.In the present invention, do not use the material of oxygen or nitrogen to prevent the electric charge accumulation.Before initialization electricity slurry, in the electricity slurry reaction chamber 200 by process gas institute applied pressure (dividing potential drop), be adjusted to essence and be general pressure that process gas 284 applied 70% to 100% between.
In step 120, utilize the electric field generator in electricity slurry reaction chamber 200, to produce electric field.
In step 130, the free electron that is released in the electricity slurry reaction chamber 200 passed through process gas to form pure H in electricity slurry reaction chamber 200
2O electricity slurry 290.As this pure H
2 O electricity slurry 290 is by behind the stabilization, and the pressure of the process gas 284 that is applied in electricity slurry reaction chamber 200 is adjusted to essence between 0.1 Bristol and 10 Bristols.Illustrate pure H as schematically shown in Figure 4
2O electricity slurry 290 when substrate or wafer 280 remove or divest photoresist layer 282, essence stored charge on substrate or wafer 280 not.
Fig. 5 A～Fig. 5 C illustrates to use known oxygen electricity slurry formula and H of the present invention
2O electricity slurry formula carries out the crystal column surface charge pattern of photoresistance after divesting on naked Silicon Wafer (not having the photoresistance coating).This surface charge figure can compare and goes the electric charge ability between prior art method and the inventive method.More particularly, Fig. 5 A illustrates first wafer to divest the surface charge figure of fabrication process after 80 seconds through photoresistance, it is to use the first known oxygen plasma prescription, and this first known oxygen plasma prescription comprises the H of 500 cubic centimeters of the nitrogen flow of 200 cubic centimeters of oxygen flow, per minutes of per minute 5000 cubic centimeters (sccm) and per minutes at least
2The O flow.First wafer has 8.18 volts of average surface electric charges with 0.17 volt of standard deviation.Fig. 5 B illustrates second wafer to divest the surface charge figure of fabrication process after 120 seconds through photoresistance, and it is to use the second known oxygen plasma prescription, and this second known oxygen plasma prescription comprises the oxygen flow of 500 cubic centimeters of per minutes at least.Second wafer has 14.1 volts of average surface electric charges with 7.77 volts of standard deviations.Fig. 5 C illustrates the 3rd wafer to divest the surface charge figure of fabrication process after 130 seconds through photoresistance, and it is to use H of the present invention
2O electricity slurry formula, this H
2O electricity slurry formula comprises the H of 500 cubic centimeters of per minutes at least
2The O flow.The 3rd wafer has 0.328 volt of average surface electric charge with 0.058 volt of standard deviation.
Fig. 6 A～Fig. 6 B and Fig. 7 A～Fig. 7 B are for using known oxygen electricity slurry formula and H of the present invention
2O electricity slurry formula carries out after the photoresistance strip process, is defined in the optical microscope photograph of the metallic pad on the wafer.Fig. 6 A～Fig. 6 B show to use known oxygen electricity slurry formula to carry out the optical microscope photograph of the metallic pad after the photoresistance strip process.Shown in photo, metallic pad has serious connection pad pitting and produces after the photoresistance strip process of using oxygen electricity slurry formula.Fig. 7 A～Fig. 7 B shows to use H of the present invention
2O electricity slurry formula carries out the optical microscope photograph of the metallic pad after the photoresistance strip process.Shown in photo, use can neutralize or discharge the H of electric charge when photoresistance divests processing procedure
2After O electricity slurry formula carried out the photoresistance strip process, metallic pad did not in fact have the connection pad pitting and produces.
After the photoresistance strip process, the wafer of some product has and is about 20 minutes waiting time.Can find to use the last metal on the product wafer after known oxygen electricity slurry formula carries out the photoresistance strip process that serious Jia Fanni metal erosion is arranged.The order of severity that it is generally acknowledged corrosion is owing to accumulation positive charge on these products quickens the Jia Fanni metal erosion.H of the present invention
2O electricity slurry formula is because prolong the extremely about 4 hours time of corrosion window, so but essence solves the problem of Jia Fanni metal erosion.Can allow to wait the time lengthening of window so successively.Be noted that adding oxygen or nitrogen are to H
2Can essence reduce the extremely about 20 minutes time of corroding window in the electric slurry formula of O, be commonly considered as owing to adding oxygen or nitrogen to H
2Can induced positive in the O electricity slurry formula and cause the deterioration of Jia Fanni metal erosion.
Along with the development of inferior micron technology, the stacked error that reduces between metal wire and metal (for example tungsten) the filling interlayer hole can cause some technical difficulties, and the electric charge induction corrosion (Dredge) of the tungsten plug of interlayer hole is one of them problem, uses H of the present invention
2But O electricity slurry formula replaces oxygen electricity slurry formula carries out the problem that photoresistance divests the corrosion of processing procedure essence solution tungsten.Fig. 8 A is the process flow diagram that illustrates conventional process, all can add the problem that H2O baking processing procedure (not having radio frequency) goes to tackle the tungsten corrosion now.Yet some electric charges still remain on the crystal column surface after through the H2O baking processing procedure that adds, if use H
2O electricity slurry formula, the processing flow figure that is illustrated as Fig. 8 B, but can not need another H2O baking processing procedure just essence remove residual charge on the crystal column surface.
Another aspect of the present invention provides to comprise at least and uses above-mentioned H
2O electricity slurry formula remove the electric charge processing procedure, in the present invention, use H
2O electricity slurry can be used to remove all electric charges from substrate.H
2O electricity slurry goes the electric charge processing procedure to have than another known H2O baking processing procedure the bigger ability of removing electric charge, and it can be found from the surface charge figure that Fig. 9 A～Fig. 9 C is illustrated.Fig. 9 A is removing the last typical crystal column surface charge pattern of electric charge for illustrating, and this wafer had 10.6 volts of average surface electric charges with 0.176 volt of standard deviation before removing electric charge.Fig. 9 B illustrates in critical mode not have radio frequency to carry out the crystal column surface charge pattern of another known H2O baking fabrication process wafer after 50 seconds, and this wafer has 2.26 volts of average surface electric charges with 0.154 volt of standard deviation after removing electric charge through prior art method.Fig. 9 C carries out H for illustrating in critical mode
2O electricity slurry removes the crystal column surface charge pattern of electric charge fabrication process wafer after 130 seconds, and this wafer is using H
2O electricity slurry removes to have behind the electric charge 1.57 volts of average surface electric charges with 0.214 volt of standard deviation.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1, a kind ofly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that it may further comprise the steps at least from substrate:
Put this substrate in a reaction chamber;
Feed a gas to this reaction chamber, wherein this gas has a pressure, and comprises a H at least
2The O reactant, this H
2It is a dividing potential drop of 70% that the O reactant has essence at least; And
In this reaction chamber, form an electricity slurry to remove this photoresist layer.
2, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that comprising more at least from substrate:
This pressure of adjusting this gas to essence between 0.1 Bristol and 10 Bristols.
3, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said photoresist layer comprises at least to be selected from a group that is formed by photoresistance and electron beam photoresistance from substrate.
4, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate from substrate, it is characterized in that wherein said substrate more comprises a metal level, at least partly this photoresist layer is positioned on this metal level.
5, according to claim 4ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said metal level comprises the metal nitride of an aluminium base or tungsten base from substrate.
6, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate from substrate, it is characterized in that wherein said substrate more comprises a metal level and at least partly is positioned at a dielectric layer on this metal level, at least partly this photoresist layer is positioned on this dielectric layer.
7, according to claim 6ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said metal level comprises metal nitride and this dielectric layer aluminium base or the tungsten base and comprises a silicon oxynitride from substrate.
8, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said gas more comprises a non-reactant from substrate.
9, according to claim 8ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said non-reactant comprises at least to be selected from a group that forms by argon gas, helium and above-mentioned combination from substrate.
10, according to claim 1ly remove photoresist layer simultaneously and go electric charge to use the method that prevents the charging of this substrate, it is characterized in that wherein said gas more comprises a fluorine-based reactant from substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58371904P | 2004-06-29 | 2004-06-29 | |
| US60/583,719 | 2004-06-29 | ||
| US11/140,115 | 2005-05-27 |
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| Publication Number | Publication Date |
|---|---|
| CN1770019A true CN1770019A (en) | 2006-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200510079870.3A Pending CN1770019A (en) | 2004-06-29 | 2005-06-29 | H2O plasma for simultaneous resist removal and charge releasing |
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| US (1) | US20050287814A1 (en) |
| CN (1) | CN1770019A (en) |
| TW (1) | TWI284936B (en) |
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| CN107219648A (en) * | 2017-06-08 | 2017-09-29 | 京东方科技集团股份有限公司 | A kind of exposure machine board, exposure system and its exposure method |
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| US20060199393A1 (en) * | 2004-06-29 | 2006-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | H20 plasma and h20 vapor methods for releasing charges |
| US7550390B2 (en) * | 2006-01-04 | 2009-06-23 | Macronix International Co., Ltd | Method and apparatus for dielectric etching during integrated circuit fabrication |
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| US6130167A (en) * | 1999-03-18 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Method of preventing corrosion of a metal structure exposed in a non-fully landed via |
| TW425619B (en) * | 1999-06-14 | 2001-03-11 | Mosel Vitelic Inc | Process for removing photoresist by a photoresist remover using the adjustment of photoresist removing stop and the continuous sequenced arrangement of chips |
| US6281135B1 (en) * | 1999-08-05 | 2001-08-28 | Axcelis Technologies, Inc. | Oxygen free plasma stripping process |
| US6794298B2 (en) * | 2000-02-04 | 2004-09-21 | Advanced Micro Devices, Inc. | CF4+H2O plasma ashing for reduction of contact/via resistance |
| US6271115B1 (en) * | 2000-06-26 | 2001-08-07 | Chartered Semiconductor Manufacturing Ltd. | Post metal etch photoresist strip method |
| US6387723B1 (en) * | 2001-01-19 | 2002-05-14 | Silicon Light Machines | Reduced surface charging in silicon-based devices |
| US7205250B2 (en) * | 2003-03-18 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
| KR100551326B1 (en) * | 2003-09-01 | 2006-02-09 | 동부아남반도체 주식회사 | Method for manufacturing a semiconductor device having capacitor |
| US20060063388A1 (en) * | 2004-09-23 | 2006-03-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for using a water vapor treatment to reduce surface charge after metal etching |
-
2005
- 2005-05-27 US US11/140,115 patent/US20050287814A1/en not_active Abandoned
- 2005-06-29 TW TW094121963A patent/TWI284936B/en active
- 2005-06-29 CN CN200510079870.3A patent/CN1770019A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107219648A (en) * | 2017-06-08 | 2017-09-29 | 京东方科技集团股份有限公司 | A kind of exposure machine board, exposure system and its exposure method |
| CN107219648B (en) * | 2017-06-08 | 2020-03-31 | 京东方科技集团股份有限公司 | Exposure machine table, exposure system and exposure method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI284936B (en) | 2007-08-01 |
| US20050287814A1 (en) | 2005-12-29 |
| TW200601444A (en) | 2006-01-01 |
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