CN1765820A - Low dielectric constant microwave dielectric ceramic material - Google Patents
Low dielectric constant microwave dielectric ceramic material Download PDFInfo
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- CN1765820A CN1765820A CN 200510019420 CN200510019420A CN1765820A CN 1765820 A CN1765820 A CN 1765820A CN 200510019420 CN200510019420 CN 200510019420 CN 200510019420 A CN200510019420 A CN 200510019420A CN 1765820 A CN1765820 A CN 1765820A
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Abstract
The invention provides a microwave medium ceramic material with low dielectric constant, low deterioration and good thermal stability. The material is a solid solution medium ceramic with a formula of uZnO-vSiO2-wTiO2, wherein 58.0 mol%<=u<=69.0 mol%, 28.0 mol%<=v<=35.0 mol%, 3.0 mol%<=w<=7 mol%, the principal crystalline phase is Zn2SiO4, the secondary crystalline is TiO2.
Description
Technical field
The invention belongs to microwave dielectric ceramic materials, particularly the low dielectric constant microwave dielectric ceramic material used of microwave devices such as the polyrod antenna in the communication system, medium substrate.
Background technology
In recent years, because low dielectric constant microwave dielectric ceramic material can be used for making polyrod antenna, medium substrate and other Primary Component of microwave communication system and microwave circuit, so in commercial and military affairs, be widely used.These requirements of using to low dielectric constant microwave dielectric ceramic material are: the specific inductivity (ε that (1) is certain
r); (2) low-loss (being high quality factor or Q*f (GHz) value); (3) temperature coefficient of resonance frequency that goes to zero (TCf) has good stability when the temperature fluctuation in order to guarantee device.These require greatly to have limited most of stupalith and are applied to practical devices.Though developed a series of low dielectric constant microwave dielectric ceramic material at present, as MgTiO
3-CaTiO
3And Ba (Zn
1/3Nb
2/3) O
3Deng, but its specific inductivity is generally all more than 20, and specific inductivity is lower than 10 microwave dielectric ceramic materials also seldom.
Summary of the invention
The invention provides a kind of low dielectric constant microwave dielectric ceramic material, purpose is that it has low-loss and good temperature stability, and specific inductivity is lower than 10 simultaneously.
Low dielectric constant microwave dielectric ceramic material of the present invention, it is uZnO-vSiO for expression formula
2-wTiO
2The sosoloid media ceramic, 58.0mol.%≤u≤69.0mol.% wherein, 28.0mol.%≤v≤35.0mol.%, 3.0mol.%≤w≤7mol.%, its principal crystalline phase are Zn
2SiO
4, parafacies is TiO
2
Described low dielectric constant microwave dielectric ceramic material, its content that is further characterized in that described each composition is: 61.0mol.%≤u≤66.0mol.%, 30.0mol.%≤v≤34.0mol.%, 4.0mol.%≤w≤5.5mol.%.
Microwave dielectric ceramic materials provided by the present invention is with ZnO-SiO
2-TiO
2Be major ingredient, by adding CaTiO
3Form, be mainly used in microwave device.In major ingredient, mix the CaTiO of 0.2~5wt.%
3After, can regulate the specific inductivity of major ingredient within the specific limits, and the TCf value can be transferred to and be approximately 0ppm/ ℃.Simultaneously because ZnO-SiO
2-TiO
2The sintering warm area narrow, by adding side ingredient CaTiO
3, can between 1250~1300 ℃, regulate the superior dielectric properties of sintering temperature in can obtaining very on a large scale.
Microwave dielectric ceramic materials of the present invention can be prepared from as follows:
(1) major ingredient is by the molar ratio weighing raw material uZnO of described u, v, w, vSiO
2, wTiO
2Be starting raw material, mix the back with deionized water and zirconium ball ball milling 3~6 hours in planetary ball mill;
(2) mixture is following dry 8~12 hours at 75~120 ℃;
(3) at 1100~1200 ℃ of following pre-burnings 2~4 hours, gained ZnO-SiO
2-TiO
2Be called for short ZST;
(4) when above-mentioned steps is carried out or timesharing, with the CaCO of 50.0mol%
3TiO with 50.0mol%
2As the starting raw material of side ingredient, mix the back with deionized water and zirconium ball ball milling 3~6 hours in planetary ball mill;
(5) said mixture is following dry 8~12 hours at 75~120 ℃;
(6) again at 1050~1150 ℃ of following pre-burnings 2~4 hours, gained CaTiO
3Be called for short CT;
(7) then, the CT after step (6) pre-burning is added among the ZST after step (3) pre-burning to CaTiO by 0.2~5wt.%
3Preferred incorporation be 0.3~1.0wt.%; Mixture is with deionized water and zirconium ball ball milling 3~6 hours in planetary ball mill;
(8) tackiness agent and granulation are added in dry back, at 1000kg/cm
2Pressure under extrusion forming, prepare the ceramic body of diameter 20mm, thickness 8~10mm;
(9) adopt a series of sintering process of temperature in 1250~1300 ℃ scope, sintering 2~4 hours.
For the dielectric properties of measure sample, at first the cylindrical ceramic sample is polished on 1200 order SiC sand paper, then it is cleaned in alcohol with ultrasonic wave.Adopt the dielectric properties of open type chamber method with transverse electric field (TE011 mould) analytic sample of microwave frequency, test frequency is at 6.5~8GHz.Resonant frequency by the measuring media resonator obtains the temperature coefficient of resonance frequency of sample with the variation of temperature rate, and the temperature range of measurement is 25~75 ℃.(XRD) carries out material phase analysis to the ceramics sample behind the sintering with X-ray diffraction analysis, and the result shows that its principal crystalline phase is Zn
2SiO
4, also have the TiO of a small amount of parafacies in addition
2
Microwave dielectric ceramic materials of the present invention, its specific inductivity is between 7~8, specific inductivity is lower than 10, has broken through traditional dielectric constant microwave ceramic medium specific inductivity and generally has been higher than 20 boundary, has low microwave dielectric loss and less temperature coefficient of resonance frequency simultaneously.Microwave dielectric ceramic materials provided by the invention can be used for the microwave device such as polyrod antenna, medium substrate in the communication system.
Embodiment
Table 1 illustrates several specific exampless and the microwaves corresponding dielectric properties thereof that constitute each component content of the present invention.
Sintering temperature and dielectric properties that table 1:CT adds the ZST material to
u(mol.%) | v(mol.%) | w(mol.%) | CT addition (wt%) | Sintering temperature (℃)/soaking time (h) | Density (g/cm 3) | ε r | Qf (GHz) | TCf (ppm/℃) |
58.0 | 35.0 | 7.0 | 0 | 1300/3 | 3.57 | 7.14 | 8400 | 53.5 |
58.0 | 35.0 | 7.0 | 0.5 | 1290/3 | 3.72 | 7.33 | 7600 | 60.2 |
60.0 | 35.0 | 5.0 | 0 | 1290/3 | 3.68 | 7.06 | 16700 | 6.7 |
60.0 | 35.0 | 5.0 | 0.2 | 1270/3 | 3.77 | 7.12 | 14800 | 9.8 |
61.0 | 33.5 | 5.5 | 0.3 | 1290/3 | 3.81 | 7.72 | 21100 | 11.4 |
62.0 | 34.0 | 4.0 | 0.7 | 1270/3 | 3.84 | 7.66 | 18500 | 4.8 |
63.6 | 31.8 | 4.6 | 0 | 1300/3 | 3.79 | 7.16 | 22300 | -8.5 |
63.6 | 31.8 | 4.6 | 0 | 1270/3 | 3.22 | - | - | Not-(not becoming porcelain) |
63.6 | 31.8 | 4.6 | 0.2 | 1270/3 | 3.93 | 7.68 | 15600 | -2.4 |
63.6 | 31.8 | 4.6 | 0.5 | 1270/3 | 3.95 | 7.72 | 14500 | -0.4 |
63.6 | 31.8 | 4.6 | 2.5 | 1270/3 | 4.06 | 7.92 | 10800 | 8.6 |
63.6 | 31.8 | 4.6 | 5.0 | 1250/3 | 4.18 | 8.28 | 6700 | 34.6 |
65.0 | 30.0 | 5.0 | 0 | 1270/3 | 3.78 | 7.27 | 24100 | -4.2 |
65.0 | 30.0 | 5.0 | 0.5 | 1250/3 | 3.86 | 7.44 | 15300 | 1.8 |
65.0 | 30.0 | 5.0 | 1.0 | 1250/3 | 3.88 | 7.49 | 10100 | 7.8 |
66.0 | 30.0 | 4.0 | 1.0 | 1270/3 | 3.72 | 7.32 | 11000 | 0.4 |
69.0 | 28.0 | 3.0 | 0 | 1300/3 | 3.64 | 6.88 | 10700 | -20.7 |
69.0 | 28.0 | 3.0 | 0.5 | 1270/3 | 3.67 | 7.41 | 8700 | -13.7 |
The dielectric properties of stupalith are to record under 6.5~8GHz in frequency.As shown in table 1, along with the increase and the SiO of ZnO content
2The minimizing of content, the specific inductivity of ceramics sample raises, and Qf value (Q is that quality factor are the inverse of dielectric loss, and f is a resonant frequency) raises, and the TCf value of sample moves to the negative value direction simultaneously.Work as TiO
2When content increases, the specific inductivity of ceramics sample and the rising of Qf value, but the TCf value is to moving on the occasion of direction, and the TCf value is subjected to TiO
2The influence of content is very big.Add CaTiO
3After, the density and the specific inductivity of ceramics sample all increase, and the TCf value has still also reduced simultaneously the Qf value of ceramics sample to moving on the occasion of direction, yet, CaTiO
3Mix and widened ZnO-SiO
2-TiO
2The sintering warm area, can make ZnO-SiO
2-TiO
2Can between 1250~1300 ℃, sinter porcelain into, and have the excellent microwave dielectric properties.
Claims (2)
1. low dielectric constant microwave dielectric ceramic material, it is uZnO-vSiO for expression formula
2-wTiO
2The sosoloid media ceramic, 58.0mol.%≤u≤69.0mol.% wherein, 28.0mol.%≤v≤35.0mol.%, 3.0mol.%≤w≤7mol.%, its principal crystalline phase are Zn
2SiO
4, parafacies is TiO
2
2. low dielectric constant microwave dielectric ceramic material as claimed in claim 1 is characterized in that the content of described each composition is: 61.0mol.%≤u≤66.0mol.%, 30.0mol.%≤v≤34.0mol%, 4.0mol.%≤w≤5.5mol.%.
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CNB2005100194205A CN1317226C (en) | 2005-09-09 | 2005-09-09 | Low dielectric constant microwave dielectric ceramic material |
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CN1317226C CN1317226C (en) | 2007-05-23 |
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Cited By (8)
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CN105036732A (en) * | 2015-08-25 | 2015-11-11 | 成都顺康三森电子有限责任公司 | Low-dielectric-loss microwave electronic ceramic material |
CN107867841A (en) * | 2016-09-22 | 2018-04-03 | 施海月 | A kind of TiO2Adulterate ZnO/SiO2The preparation method of microwave-medium ceramics |
PL424833A1 (en) * | 2018-03-09 | 2019-09-23 | Instytut Technologii Elektronowej | Ceramic tape for microwave LTCC substrates |
CN110372347A (en) * | 2018-04-12 | 2019-10-25 | 中国科学院上海硅酸盐研究所 | A kind of low-loss dielectric constant microwave ceramic material and preparation method thereof |
CN111205083A (en) * | 2020-01-19 | 2020-05-29 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
CN111635226A (en) * | 2020-06-28 | 2020-09-08 | 厦门松元电子有限公司 | Low-dielectric-constant ceramic material and preparation method thereof |
CN112979297A (en) * | 2021-03-02 | 2021-06-18 | 山东国瓷功能材料股份有限公司 | Low-dielectric-constant microwave dielectric ceramic material and ceramic component |
CN113683413A (en) * | 2021-08-17 | 2021-11-23 | 浙江大学 | Millimeter wave dielectric ceramic |
Family Cites Families (3)
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CN1267377C (en) * | 2003-10-15 | 2006-08-02 | 华中科技大学 | Microwave medium ceramic and preparing method thereof |
CN1275901C (en) * | 2003-10-23 | 2006-09-20 | 浙江大学 | Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process |
CN1298668C (en) * | 2004-12-31 | 2007-02-07 | 清华大学 | Low-temperature sintered sosoloid microwave dielectric ceramic material |
-
2005
- 2005-09-09 CN CNB2005100194205A patent/CN1317226C/en not_active Expired - Fee Related
Cited By (12)
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CN105036732A (en) * | 2015-08-25 | 2015-11-11 | 成都顺康三森电子有限责任公司 | Low-dielectric-loss microwave electronic ceramic material |
CN107867841A (en) * | 2016-09-22 | 2018-04-03 | 施海月 | A kind of TiO2Adulterate ZnO/SiO2The preparation method of microwave-medium ceramics |
PL424833A1 (en) * | 2018-03-09 | 2019-09-23 | Instytut Technologii Elektronowej | Ceramic tape for microwave LTCC substrates |
CN110372347A (en) * | 2018-04-12 | 2019-10-25 | 中国科学院上海硅酸盐研究所 | A kind of low-loss dielectric constant microwave ceramic material and preparation method thereof |
CN110372347B (en) * | 2018-04-12 | 2021-10-01 | 中国科学院上海硅酸盐研究所 | Low-loss low-dielectric-constant microwave ceramic material and preparation method thereof |
CN111205083A (en) * | 2020-01-19 | 2020-05-29 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
CN111205083B (en) * | 2020-01-19 | 2022-04-22 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
CN111635226A (en) * | 2020-06-28 | 2020-09-08 | 厦门松元电子有限公司 | Low-dielectric-constant ceramic material and preparation method thereof |
CN111635226B (en) * | 2020-06-28 | 2022-03-11 | 厦门松元电子股份有限公司 | Low-dielectric-constant ceramic material and preparation method thereof |
CN112979297A (en) * | 2021-03-02 | 2021-06-18 | 山东国瓷功能材料股份有限公司 | Low-dielectric-constant microwave dielectric ceramic material and ceramic component |
CN112979297B (en) * | 2021-03-02 | 2022-07-01 | 山东国瓷功能材料股份有限公司 | Low-dielectric-constant microwave dielectric ceramic material and ceramic component |
CN113683413A (en) * | 2021-08-17 | 2021-11-23 | 浙江大学 | Millimeter wave dielectric ceramic |
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