CN1758819A - Organic light emitting device and method of manufacturing the same - Google Patents
Organic light emitting device and method of manufacturing the same Download PDFInfo
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- CN1758819A CN1758819A CNA2005101070996A CN200510107099A CN1758819A CN 1758819 A CN1758819 A CN 1758819A CN A2005101070996 A CNA2005101070996 A CN A2005101070996A CN 200510107099 A CN200510107099 A CN 200510107099A CN 1758819 A CN1758819 A CN 1758819A
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Abstract
An organic light emitting device (OLED) and a method for manufacturing the same are disclosed. In one embodiment, the OLED includes i) a pixel layer having a first electrode, a second electrode, and a light emitting portion interposed between the first electrode and the second electrode and having at least an emission layer, ii) a transparent member disposed in a direction in which light generated from the pixel layer is transmitted, iii) a diffraction grating disposed between the pixel layer and the transparent member, and iv) a low-refractive layer made of a material having a refractive index less than that of a material forming the transparent member, the low-refractive layer disposed between the diffraction grating and the transparent member. The OLED can prevent image spreading and deterioration in color purity while having enhanced light coupling efficiency.
Description
CROSS-REFERENCE TO RELATED PATENT
The application requires on October 5th, 2004 to the korean patent application Nos.10-2004-0079239 of Korea S Department of Intellectual Property submission and the rights and interests of 10-2004-0079240, is incorporated herein in full as a reference.
Technical field
The present invention relates to a kind of organic luminescent device and manufacture method thereof.More specifically, the present invention relates to a kind of image spreading and deterioration in color purity of preventing and have the organic luminescent device and the manufacture method thereof of the coupling efficiency of raising simultaneously.
Background technology
Usually, luminescent device is a kind of spontaneous emission device, and has many advantages and comprise wide visual angle, fabulous contrast and fast response speed.
According to the material that forms luminescent layer, luminescent device (LED) is divided into inorganic LED and organic LED.Usually, organic LED (OLED) therefore can show the better characteristic than inorganic LED owing to have fabulous brightness, low driving voltage and fast response speed, and can realize multiple color monitor.
OLED is constructed usually like this, promptly forms anode on substrate, and order forms illuminating part and the negative electrode that comprises luminescent layer at least on anode.Illuminating part can further comprise hole transmission layer and electron transfer layer except that luminescent layer.Hole transmission layer, luminescent layer and electron transfer layer are the organic films of being made by organic compound.
The optical efficiency of OLED generally comprises internal light emission efficiency and external light emission efficiency.Internal light emission efficiency depends on the photoelectric conversion efficiency of the organic compound that forms the organic layer that comprises hole transmission layer, luminescent layer, electron transfer layer etc.External light emission efficiency (being called as " coupling efficiency " hereinafter) depends on every layer refractive index.
Compare with the coupling efficiency of cathode ray tube (CRT), plasma display (PDP), Field Emission Display (FED) or other display device, the coupling efficiency of organic LED is low relatively.This is because because the cause of total internal reflection, meeting disappears and can not be transmitted to the air in device when the light that produces from illuminating part passes each layer of device.For example launch in (rear-emission) type OLED overleaf, normal light is propagated in three kinds of modes: i) anode/illuminating part mode, and wherein the light that produces at illuminating part is directed into anode or illuminating part at anode/substrate interface place then by total reflection; Ii) substrate mode, the light that has wherein produced is directed into substrate at the substrate/air interface place then by total reflection; And iii) external mode, the transmittance that has wherein produced is to the outside.In the OLED that uses the thick ITO layer of 200nm, the known light that produces at illuminating part about 45.2% relevant with anode/illuminating part mode, about 31.1% is relevant with the substrate mode, and about 23.5% is relevant with external mode.In other words, the coupling efficiency of common OLED is very low, and promptly about 23%.
One of them of the multiple trial of the coupling efficiency of raising OLED is relevant with the use diffraction grating.For example, Korean Patent publication No.10-0379396 discloses a kind of oled panel, it comprises the substrate of the groove (diffraction grating) with desired depth, be separated from each other and the groove of preset space length at interval, the anti-ducting layer that in the district that forms groove, forms, first electrode that on the whole surface of substrate, forms, what form on anti-ducting layer stops, and stop with first electrode on the order organic luminous layer and second electrode that form.
Korean Patent publication No.2003-0026450 discloses a kind of photonic crystal organic LED, it comprises the transparency carrier with formation irregularity thereon, the transparent electrode layer that on organic substrate, forms, the hole transport organic luminous layer that on transparent electrode layer, forms, the electric transmission organic luminous layer that on the hole transport organic layer, forms, and the cathode layer that on the electric transmission organic layer, forms.
Japan Patent No.2991183 discloses a kind of LED with laminated construction, sequential cascade transparency carrier, diffraction grating, transparency electrode, organic layer and reflecting electrode successively in this laminated construction.
Some light that above-mentioned diffraction grating diffraction is directed in anode/illuminating part mode are to go into to inject anode/substrate interface less than the angle of the critical angle of total internal reflection with identical, so that then be transmitted to the outside.The light that is not transmitted to the outside is directed into and propagates along anode and illuminating part.Yet because the pixel that is provided with in anode/illuminating part limits the reason of layer (PDL), the light that is directed can not propagate into neighbor.Even when the light that is directed can propagate into neighbor, the wide part of propagation is absorbed in anode and the illuminating part, disappears then, thus neighbor is not exerted one's influence basically.
Yet, can propagate into neighbor at the substrate/air interface place by total reflection and with the light that the substrate mode is directed, and the light that is directed then is transmitted to the outside herein.This be because, different with the refreshing illuminating part of anode, in substrate, be not formed for hindering the PDL that light is propagated, and because the cause of the very low efficiency of light absorption of substrate, the light that is directed can not eliminated from substrate.The light that has arrived neighbor is transmitted to the outside by the diffraction grating that is provided with at the neighbor place, thereby causes image spreading and deterioration in color purity, and finally can reduce organic light-emitting device picture quality.
Summary of the invention
An aspect of of the present present invention provides a kind of image spreading and deterioration in color purity of preventing to have the organic luminescent device of the coupling efficiency of raising simultaneously, and manufacture method.
Another aspect of the present invention provides a kind of organic luminescent device, this organic luminescent device comprises i) pixel layer, it has first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least, ii) transparent component, its direction setting along the transmittance that produces from pixel layer to the outside, iii) diffraction grating, it is arranged between pixel layer and the transparent component, and iv) forming low-refractive-index layer, it is made by having the refractive index materials lower than the refractive index of the material that forms transparent component, and this forming low-refractive-index layer is arranged between diffraction grating and the transparent component.
In one embodiment, transparent component, forming low-refractive-index layer, diffraction grating, first electrode, the illuminating part and second electrode be sequential cascade successively, and transparent component can be a substrate, and first electrode can be a transparency electrode.
In one embodiment, first electrode, illuminating part, second electrode, diffraction grating, forming low-refractive-index layer and transparent component be sequential cascade successively, and second electrode can be a transparency electrode, and transparent component can be protective layer or seal member.
In one embodiment, transparent component can be made by glass or plastic material.
In one embodiment, the refractive index of the material of formation forming low-refractive-index layer can be in about scope of 1～about 1.5.
In one embodiment, the material of formation forming low-refractive-index layer is a porous sio2.
In one embodiment, the forming low-refractive-index layer thickness that can have is in the scope of about 100nm～about 1000nm.
In one embodiment, diffraction grating can have linear, rectangle cylindricality or cylindrical projections.
In one embodiment, the spacing between the projection of diffraction grating is about 1/4～4 times of the light wavelength that produces from illuminating part.
In one embodiment, first electrode can be by ITO, IZO, ZnO or In
2O
3Make.
In one embodiment, second electrode can be by from comprising Li, Ca, and Al, Ag, at least two kinds combination of at least a and these materials of selecting in the group of Mg is made.
Another aspect of the present invention provides a kind of organic luminescent device, this organic luminescent device comprises i) pixel layer, it has first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least, ii) transparent component, its direction setting along the transmittance that produces from pixel layer to the outside, iii) diffraction grating, it is arranged between pixel layer and the transparent component, iv) forming low-refractive-index layer, it is made by having the refractive index materials lower than the refractive index of the material that forms transparent component, this forming low-refractive-index layer is arranged between diffraction grating and the transparent component, and v) light absorbing zone, and it is arranged between forming low-refractive-index layer and the transparent component.
In one embodiment, transparent component, light absorbing zone, forming low-refractive-index layer, diffraction grating, first electrode, the illuminating part and second electrode be sequential cascade successively, and transparent component can be a substrate, and first electrode can be a transparency electrode.
In one embodiment, first electrode, illuminating part, second electrode, diffraction grating, forming low-refractive-index layer, light absorbing zone and transparent component be sequential cascade successively, and second electrode can be a transparency electrode, and transparent component can be protective layer or seal member.
In one embodiment, transparent component can be made by glass or plastic material.
In one embodiment, the refractive index of the material of formation forming low-refractive-index layer can be in about scope of 1～about 1.5.
In one embodiment, the material of formation forming low-refractive-index layer is porous SiO
2
In one embodiment, the forming low-refractive-index layer thickness that can have is in the scope of about 100nm～about 1000nm.
In one embodiment, the absorption coefficient of the material of formation light absorbing zone can be in about scope of 0.01～about 0.05.
In one embodiment, light absorbing zone can be by TiO
2, Ta
2O
5Or Nb
2O
5Make.
In one embodiment, the light absorbing zone thickness that can have is in the scope of about 50nm～about 1 μ m.
In one embodiment, diffraction grating can have linear, rectangle cylindricality or cylindrical projections.
In one embodiment, the spacing between the projection of diffraction grating is about 1/4～4 times of the light wavelength that produces in illuminating part.
Another aspect of the present invention provides a kind of manufacturing organic light-emitting device method, this method is included in and forms forming low-refractive-index layer on the substrate, on forming low-refractive-index layer, form diffraction grating, and on diffraction grating, form pixel layer, this pixel layer have first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least.
Another aspect of the present invention provides a kind of manufacturing organic light-emitting device method, this method is included in and forms light absorbing zone on the substrate, on light absorbing zone, form forming low-refractive-index layer, on forming low-refractive-index layer, form diffraction grating, and on diffraction grating, form pixel layer, this pixel layer have first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least.
In one embodiment, diffraction grating can form by the plane of composition forming low-refractive-index layer towards the illuminating part direction.
In one embodiment, composition can comprise and the photoresist layer is coated on the forming low-refractive-index layer and utilizes electronic beam method or the resulting structure of laser hologram photography method composition.
Description of drawings
Embodiments of the invention will be described with reference to the accompanying drawings.
Fig. 1 illustrates organic light-emitting device schematic cross-section according to an embodiment of the invention.
Fig. 2 A and 2B illustrate the analysis result of the interlayer critical angle in device that does not have forming low-refractive-index layer and the device with forming low-refractive-index layer.
Fig. 3 illustrates diffraction grating according to an embodiment of the invention and the concept map of the change in optical path length that caused by diffraction grating.
Fig. 4～Fig. 6 is the organic light-emitting device schematic cross-section that illustrates according to other embodiment of the present invention.
Fig. 7 be illustrate do not have diffraction grating, any one organic light-emitting device schematic cross-section in forming low-refractive-index layer and the light absorbing zone.
Fig. 8 illustrates neither to have the organic light-emitting device schematic cross-section that forming low-refractive-index layer does not have light absorbing zone yet.
Embodiment
Describe organic luminescent device according to an embodiment of the invention in detail referring now to accompanying drawing.
In one embodiment, organic LED (OLED) comprises i) pixel layer, ii) transparent component, light propagates into the outside by this transparent component, iii) diffraction grating, it is arranged between pixel layer and the transparent component, and iv) forming low-refractive-index layer, it is made by having the refractive index materials lower than the refractive index of the material that forms transparent component, and this forming low-refractive-index layer is arranged between diffraction grating and the transparent component.
In one embodiment, by utilizing diffraction grating, the light that is directed into pixel layer has the incidence angle less than the critical angle of total internal reflection.Like this, the energy transmissive that is directed is to the outside of transparent component.Therefore, in one embodiment, OLED has high level coupling efficiency.
In one embodiment, forming low-refractive-index layer has reduced the ratio of the light of the transparent component that is directed into OLED.Therefore, owing to the reason of the light that is directed causes, image spreading and deterioration in color purity can be reduced to minimum or elimination.
Fig. 1 illustrates the schematic cross-section of organic luminescent device (OLED) according to an embodiment of the invention.First electrode 122, the illuminating part 126 and second electrode 130 form pixel layer usually.In one embodiment, first electrode 122 is transparency electrode and above-mentioned transparent component counterpart substrate 110.Like this, the transmittance that produces in the illuminating part 126 is to the outside of substrate 110.Fig. 1 embodiment shows a kind of back side emission OLED, and wherein light is towards the rear side emission of illuminating part 126, and promptly light passes first electrode, 122 propagation among Fig. 1.
In one embodiment, OLED has forming low-refractive-index layer 115 on first plane of substrate 110.In addition, as shown in Figure 1, first electrode 122, illuminating part 126 and second electrode, 130 sequential cascades are on forming low-refractive-index layer 115.In one embodiment, between the forming low-refractive-index layer 115 and first electrode 122, form diffraction grating 120 (groove or projection).In one embodiment, on second electrode 130, can further be provided for sealing from the outside i) first electrode 122, ii) illuminating part 126 and iii) the seal member (not shown) of second electrode 130.
In one embodiment, have silica and can be used as substrate 110 as the transparent glass substrate of main component.For the smoothness that obtains substrate 110 and prevent that impurity from infiltrating in the substrate 110, in one embodiment, can further be provided with the resilient coating (not shown) of being made by for example silica on substrate 110.In another embodiment, Rou Xing plastic material also can be used as substrate 110.
In one embodiment, forming low-refractive-index layer 115 is made the amount that produces and be directed into the light of substrate 110 from illuminating part 126 to reduce by having the refractive index materials lower than the refractive index of substrate 110.Adopt this mode, the light propagation that is directed into substrate 110 is passed substrate 110 so that propagating into the amount of the light in neighbor district is significantly reduced, and reduces image spreading and deterioration in color purity thus greatly.
Can analyze experiment by following critical angle and be proved by effect that forming low-refractive-index layer 115 reduces the amount of the light that is directed into substrate 110 is set.The target devices that critical angle is analyzed comprises example device 1 and 2.Device 1 comprises glass substrate, the ITO layer that 150nm is thick, the Al layer that EL layer that 1500 are thick and 3000 are thick.Device 2 has and device 1 identical construction, and comprises that further the forming low-refractive-index layer that 500nm is thick, this forming low-refractive-index layer are arranged between substrate and the ITO layer and the refractive index that has is 1.24.Device 1 and 2 critical angle are analyzed.Fig. 2 A and 2B explanation does not have the device (device 1) of forming low-refractive-index layer and has the analysis result of the interior interlayer critical angle of the device (device 2) of forming low-refractive-index layer.With reference to figure 2A, because the critical angle at ITO/ substrate interface place and substrate/air interface place is respectively 58 degree and 41 degree, therefore the light under the angle between 41 degree and 58 degree is directed into substrate 110.By contrast, with reference to figure 2B, owing in the critical angle at the interface of ITO/ forming low-refractive-index layer being 44 degree, therefore only the light under the angle between 41 degree and 44 degree is directed into substrate 110.
Device 1 and 2 is carried out Finite Difference-Time Domain divide simulation, its result illustrates below.
Table 1
| Device 1 | Device 2 | |
| ITO/ illuminating part mode | 33％ | 54％ |
| The substrate mode | 41％ | 22％ |
| External mode | 26％ | 24％ |
Reference table 1, the amount that is directed into the light of substrate in the substrate mode in device 1 is 41%, and the amount that is directed into the light of substrate in the substrate mode of device 2 is 22% at the most.This shows that forming low-refractive-index layer 115 has significantly reduced the ratio of the light that is directed into substrate, greatly reduces image spreading and deterioration in color purity thus.
In one embodiment, forming low-refractive-index layer 115 can be made by the material of the ranges of indices of refraction that has between about 1～about 1.5.Refractive index value 1 is relevant with the absolute index of refraction of air, and refractive index value 1.5 is relevant with the absolute index of refraction of the silica that generally is used as substrate 110.
In one embodiment, forming low-refractive-index layer 115 can be by porous SiO
2Make.In one embodiment, porous SiO
2Be silica xerogel (silica xerogel) or silica aerogel (silicaaerogel).
Silica aerogel is a kind of material with the porous network structure that is made of the silica fibre (silicastrands) of the thickness with several nanometers.That is to say that silica aerogel is a kind of super porous material with about 80%～porosity of about 99% and the magnitude range in hole for about 1nm～about 50nm, and has high-specific surface area (〉=700m
2/ g).In one embodiment, the method for preparing silica aerogel comprises by the sol-gel processing reaction and prepares wet gel, dry wet gel then, and can adopt multiple mode to carry out this method according to the kind of silica aerogel.
In one embodiment, forming low-refractive-index layer 115 thickness that can have is in the scope of about 100nm～about 1000nm.If the thickness of forming low-refractive-index layer 115 is less than about 100nm, the effect that reduces the amount of the light that is directed into substrate so can be very low.If, can producing crack and production cost and time so greater than 1000nm in forming low-refractive-index layer 115, the thickness of forming low-refractive-index layer 115 can increase.
On forming low-refractive-index layer 115, form first electrode of making by transparent conductive material 122.In one embodiment, first electrode 122 is by ITO, IZO, ZnO and In
2O
3Form.In one embodiment, on first electrode 122, form predetermined pattern by photoetching.In this embodiment, the predetermined pattern of first electrode 122 under the situation of passive matrix (PM) type can by be separated from each other and at interval the streak line of preset space length form, and at active matrix (AM) but respective pixel under the situation of type.Under AM type situation, thin-film transistor (TFT) the layer (not shown) with at least one TFT can be set further between first electrode 122 and substrate 110.First electrode 122 is electrically connected to the TFT layer.First electrode 122 is connected on outside first electrode terminal (not shown) with as anode.
In one embodiment, between first electrode 122 and forming low-refractive-index layer 115, form diffraction grating 120 (see figure 1)s.In one embodiment, as shown in Figure 1, between the forming low-refractive-index layer 115 and first electrode 122, can be formed directly in diffraction grating 120 at the interface.In another embodiment, new diffraction grating layer (not shown) can be arranged between the forming low-refractive-index layer 115 and first electrode 122.
Fig. 3 illustrates diffraction grating according to an embodiment of the invention and the concept map of the change in optical path length that caused by diffraction grating.As shown in Figure 3, when with θ
iDuring the diffracted optical grating reflection of the light of angle incident, obtain following equation:
Nd (sin θ
i-sin θ
0)=k λ＜equation 1 〉
Wherein k represents the number of the order of diffraction, θ
0The expression angle of reflection, d represents the spacing between the projection of diffraction grating, λ represents the incident light wavelength, and n represents the refractive index of diffraction grating 120.Can be that " d " comes accommodation reflex angle θ by the spacing of regulating between the projection
0Therefore, by utilizing diffraction grating 120 will become with the light greater than the angle incident of critical angle can increase the light that is transmitted to substrate 110 outsides with the light less than the angle incident of critical angle amount.
In one embodiment, the projection of diffraction grating 120 or groove can form with multiple shape.The example of shape for lugs comprises line, rectangular column, and cylinder, net etc., but be not limited to this.
Spacing between each projection of diffraction grating 120 can be set to from about 1/4～about 4 times of the light wavelength of illuminating part 126 generations.Above-mentioned reason is in order to make it less than critical angle by the incidence angle of diffraction grating 120 controls from the light of illuminating part 126 generations.If the spacing between each projection of diffraction grating 120 is greater than 4 times of the light wavelength that produces from illuminating part 126, the diffracted degree of light reduces so, that is, the angle of diffracted light can not fully reduce with the critical angle less than diffraction grating 120.If the spacing between each projection of diffraction grating 120 less than about 1/4 times of the light wavelength that produces from illuminating part 126, has only light in a small amount to pass diffraction grating 120 so, this can reduce coupling efficiency.In projection is under the situation of rectangular column shape, the corresponding d of the spacing between each projection of diffraction grating 120, as shown in Figure 3.The projection that those skilled in the art can understand diffraction grating 120 at an easy rate can have the different shape except that the rectangular column shape.
When second electrode 130 was the PM type, it can be formed by the strip line perpendicular to the pattern of first electrode 122.When second electrode 130 was the AM type, it can be formed with respective pixel.In the latter case, second electrode 130 can be formed on the top of the whole active area of display image.
Between first electrode 122 and second electrode 130, illuminating part 126 is set.In one embodiment, illuminating part 126 can be made by low molecule organic material or polymerization organic material.When illuminating part 126 was made by low molecule organic material, it can have the single or multiple lift lamination, comprises hole injection layer (HIL), hole transmission layer (HTL), luminescent layer (EML), electron transfer layer (ETL), electron injecting layer (EIL) etc.The example of available organic material comprises copper phthalocyanine (CuPc), N, N '-two (1-naphthyl)-N, N '-diphenyl-benzidine (N, N '-Di (naphthalene-1-yl)-N, N '-diphenyl-benzidine) (NPB) or three-oxine aluminium (Alq3) etc.Low molecule organic material can form by vacuum deposition.
When illuminating part 126 was made by the polymerization organic material, it can have the structure that comprises hole transmission layer (HTL) and luminescent layer (EML).In one embodiment, PEDOT (poly--3,4-ethylidene dioxy base thiophene) (Poly-3,4-ethylenedioxythiophene) as hole transmission layer and based on the polymerization organic material of PPV (polyphenylene vinylene) or poly-fluorenes as luminescent layer (EML).In the process of using polymerization organic material formation illuminating part 126, can adopt silk screen printing or ink jet printing herein.The formation of organic luminous layer is not limited to said method and can variously revises.
Fig. 4 is the organic light-emitting device schematic cross-section that illustrates according to another embodiment of the present invention.Fig. 4 embodiment shows a kind of positive surface launching (front-emission) OLED, and wherein light is towards the emission of the front side of illuminating part 126, and promptly light passes 130 propagation of second electrode.First electrode 122, the illuminating part 126 and second electrode 130 form pixel layer.In this embodiment, second electrode 130 is that light can pass transparency electrode wherein.In addition, on forming low-refractive-index layer 115, form transparent sealing parts 135.Like this, the light transmissive that produces in illuminating part 126 is to the outside of seal member 135.
In one embodiment, have silica and can be used as seal member 135 as the transparent glass substrate of main component.For protection forming low-refractive-index layer 115 penetrates into the there to prevent moisture or oxygen, on the bottom of seal member 135, the protective layer (not shown) can be set further.In one embodiment, protective layer can be made by silica.
In this embodiment, on second electrode 130, form forming low-refractive-index layer 115.In one embodiment, forming low-refractive-index layer 115 is made by having the refractive index materials lower than the refractive index of seal member 135, has reduced the ratio that produces and be directed into the light of seal member 135 from illuminating part 126 thus.Therefore, the amount that propagates into the light in neighbor district significantly reduces, and can reduce image spreading and deterioration in color purity greatly thus.Forming low-refractive-index layer 115 is with above-mentioned basic identical and do not provide its detailed description.
In Fig. 4 embodiment, between the forming low-refractive-index layer 115 and second electrode 130, insert diffraction grating 120.Increase the principle of coupling efficiency according to the use diffraction grating that is described with reference to figure 3, diffraction grating 120 can increase the amount of the light of the outside that is transmitted to seal member 135 thus with the light that is adjusted to the light greater than the angle incident of critical angle with the angle incident that is less than or equal to critical angle.Diffraction grating 120, first electrode 122, illuminating part 126 and second electrode 130 are with above-mentioned basic identical and do not provide its detailed description.
Fig. 5 is the organic light-emitting device schematic cross-section that illustrates according to another embodiment of the present invention.Equally among Fig. 5 embodiment and Fig. 1 embodiment show a kind of back side emission OLED.In this embodiment, as shown in Figure 5, this OLED is included in the light absorbing zone 117 between forming low-refractive-index layer 115 and the substrate 110.As mentioned above, forming low-refractive-index layer 115 has significantly reduced the amount of the light in the neighbor district that propagates on the substrate 110.Yet, still can have a certain amount of light that is directed into substrate 110.In this embodiment, light absorbing zone 117 absorb from the remaining light that is directed of substrate 110 in case the luminous energy of propagating along substrate 110 that is directed by the very fast disappearance of light absorbing zone 117.Therefore, in this embodiment, the light that is directed in the substrate mode propagate into light from here transmissive can eliminate substantially or fully to the phenomenon in the neighbor district of outside, can more effectively prevent image spreading and deterioration in color purity thus.
In Fig. 5 embodiment, sequential cascade first electrode 122, illuminating part 126 and second electrode 130 successively on forming low-refractive-index layer 115.Between the forming low-refractive-index layer 115 and first electrode 122, form diffraction grating 120.In one embodiment, on second electrode 130, can further be provided for the seal member (not shown) of potted component 122,126 from the outside and 130.
In one embodiment, form absorption coefficient that the material of light absorbing zone 117 has in about scope of 0.01～about 0.05.If the absorption coefficient of light absorbing zone 117 is less than about 0.01, the effect that absorbs the light that is directed in the substrate mode so is insignificant.If the absorption coefficient of light absorbing zone 117 is greater than about 0.05, optical coupling coefficient can undesirably be reduced so.
In one embodiment, light absorbing zone 117 can be formed by inorganic thin film.The example of inorganic thin film comprises TiO
2, Ta
2O
5, Nb
2O
5Deng, but be not limited to this.
In one embodiment, the thickness that has of light absorbing zone 117 is in the scope of about 50nm～about 1 μ m.If the thickness of light absorbing zone 117 is less than about 50nm, the effect that absorbs the light that is directed in the substrate mode so is insignificant.If the thickness of light absorbing zone 117 is greater than about 1 μ m, optical coupling coefficient can undesirably be reduced so.
In one embodiment, the light that is directed in the substrate mode that can cause image spreading and deterioration in color purity can be eliminated fully by forming low-refractive-index layer 115 and light absorbing zone 117.Like this, image spreading and deterioration in color purity can be avoided.
Fig. 6 is the organic light-emitting device schematic cross-section that illustrates according to another embodiment of the present invention.Fig. 6 embodiment such as Fig. 4 embodiment show a kind of positive surface launching OLED.In this embodiment, order forms forming low-refractive-index layer 115, light absorbing zone 117 and seal member 135 on second electrode 130.Between the forming low-refractive-index layer 115 and second electrode 130, diffraction grating 120 is set.
Though the embodiment that has described is about the back side or positive surface launching OLED, these embodiment also can be applied to comprising polytype OLED of two-sided emission type.
Manufacturing will be described with respect to Fig. 1 according to the method for the OLED of an embodiment.In one embodiment, this method comprises i) formation forming low-refractive-index layer 115 on substrate 110, ii) on forming low-refractive-index layer 115, form diffraction grating 120, and iii) forming pixel layer, this pixel layer has first electrode 122, second electrode 130 and is inserted in the illuminating part 126 that also has luminescent layer between first and second electrodes 122 and 130 at least.In one embodiment, form forming low-refractive-index layer 115 on the substrate 110 by applying or being deposited on.In another embodiment, forming low-refractive-index layer 115 can form by diverse ways according to the material that is used to form forming low-refractive-index layer 115.On forming low-refractive-index layer 115 form diffraction grating 120 thereafter.In one embodiment, diffraction grating 120 can use photoresist film to utilize photoetching process to form.In one embodiment, after forming photoresist film on the forming low-refractive-index layer 115,, use developer solution corrosion photoresist film then by electronic beam method or the resulting structure of laser hologram photography method composition.Then, use reactive ion etching (RIE) etching forming low-refractive-index layer 115, finish diffraction grating 120 thus.
Then, first electrode 122, illuminating part 126 and second electrode, 130 orders form.In one embodiment, electrode 122,130 and illuminating part 126 can form according to material use deposit that is used to form element 122,126 and 130 or coating.In one embodiment, after forming first electrode 122, optionally adopt glossing.
Manufacturing will be described with respect to Fig. 5 according to the method for the OLED of another embodiment.In one embodiment, this method is included in and forms light absorbing zone 117 on the substrate 110, forms forming low-refractive-index layer 115 on light absorbing zone 117, forms diffraction grating 120 on forming low-refractive-index layer 115, and forms pixel layer 122,126 and 130.
In one embodiment, at first form light absorbing zone 117 on the substrate 110 by being deposited on.In one embodiment, the suitable deposition process that forms light absorbing zone 117 can be selected according to the material that is used to form layer 117.Residue element 115,122,126 and 130 adopts mode same as described above to form.
Though utilized back side emission OLED case description make the method for OLED, the present invention is not limited thereto.For example, this manufacture method can be applied to positive surface launching OLED shown in Fig. 4 and 6 and the type of other for example two-sided emission OLED.In above-mentioned OLED, improve the effect of coupling efficiency and prevent that the effect of image spreading and deterioration in color purity from can evaluate by multiple example and comparative example.Schematically illustrated in Fig. 1 with the structures of samples that illustrative example is prepared.At first, be painted on the glass substrate 110 as the porous silicon aeroge of forming low-refractive-index layer 115, thickness is 500nm.The refractive index that the porous silicon aeroge of formation forming low-refractive-index layer 115 has is 1.24.On forming low-refractive-index layer 115, form and have the height of about 0.3 μ m and be separated from each other the projection of about 0.5 μ m at interval.More specifically, form photoresist film on forming low-refractive-index layer 115, thickness is 0.2 μ m, and this photoresist film is exposed, composition and development, and formation has the irregularity of the height of 0.2 μ m thus.Thereafter, it is 0.3 μ m that the silica aerogel that has exposed is etched into the degree of depth, and remaining photoresist film is removed by dry etching, forms diffraction grating 120 thus on forming low-refractive-index layer 115.Then, ITO layer (first electrode; 122) form, thickness is 200nm, polishes the end face of ITO layer 122 then.On ITO layer 122, form the thick EL layer (illuminating part of 1500 ; 126) with as the thick Al layer of 3000 of second electrode 130.Resulting sample is called as sample 1.
In comparative example 1, except forming the diffraction grating not forming forming low-refractive-index layer on the substrate, adopt with example (sample 1) in identical mode prepare sample.Resulting sample is called as sample A.The structure of sample A is schematically illustrated in Fig. 8.With reference to figure 8, sample A is constructed like this, i.e. sequential cascade substrate 110 successively, diffraction grating 120, the first electrodes 122, illuminating part 126 and second electrode 130.
At comparative example 2 (sample B; Not shown in the table 2) in, except not forming the diffraction grating, adopt with comparative example 1 in identical mode prepare sample.Resulting sample is called as sample B.With reference to figure 7, sample B is constructed like this, i.e. sequential cascade substrate 110, the first electrodes 122, illuminating part 126 and second electrode 130 successively.
Sample 1, sample A and sample B are carried out the FDTD simulation, and the coupling efficiency raising rate of calculation sample A and sample 1 and image spreading rate.Result of calculation is shown in the table 2.Coupling efficiency raising rate is according to calculating from neither having the amount that diffraction grating do not have the light that the sample B of forming low-refractive-index layer extracts yet.Simultaneously, when electric field was applied in the intended pixel floor district of sample A or 1, term " image spreading rate " was used to represent from the amount of the light of the intended pixel floor district emission ratio to the amount of the light launched from the pixel layer district except that intended pixel floor district.
Table 2
| Sample A (comparative example 1) | Sample 1 (example) | |
| Coupling |
30％ | 50％ |
| The |
10％ | 4％ |
As shown in table 2, the coupling efficiency raising rate of sample 1 is 50%, and its coupling efficiency raising rate that is higher than sample A is 30%.The image spreading rate of sample 1 is 4%, and its image spreading rate (10%) than sample A is much lower.This confirms that the sample 1 of diffraction grating and forming low-refractive-index layer that comprises according to the present invention has the coupling efficiency of raising and the image spreading of reduction.
Then, coupling efficiency improves effect and prevents that the effect of image spreading and deterioration in color purity will be described with reference to figure 5 embodiment.
Schematically illustrated in Fig. 5 with the structures of samples that illustrative example is prepared.At first, on glass substrate 110, form TiO as light absorbing zone 117
2, thickness is 500nm.The absorption coefficient of light absorbing zone 117 is 0.01.Residue condition is identical with the condition of sample 1.Resulting sample is called as sample 2.
Sample 2 and sample A are carried out the FDTD simulation, and the image spreading rate of calculation sample 2 and sample A.Herein, sample A neither has light absorbing zone and does not also have forming low-refractive-index layer.Result of calculation is shown in the table 3.When electric field was applied in the intended pixel floor district of sample 2 or A, term " image spreading rate " was used to represent from the amount of the light of the intended pixel floor district emission ratio to the amount of the light launched from the pixel layer district except that intended pixel floor district.
Table 3
| Sample 2 | Sample A | |
| The |
0％ | 10％ |
Reference table 3 neither has sample A that light absorbing zone do not have a forming low-refractive-index layer yet and has and be no less than 10% image spreading rate.
By contrast, both had the sample 2 that forming low-refractive-index layer also has a light absorbing zone and had 0% image spreading rate, promptly in sample 2, do not produced image spreading.Therefore, the susceptible of proof sample 2 of diffraction grating, forming low-refractive-index layer and light absorbing zone that comprises according to an embodiment of the invention can prevent image spreading and deterioration in color purity.
According to embodiments of the invention, above-mentioned OLED can prevent that image spreading and deterioration in color purity have the coupling efficiency of raising simultaneously.Like this, can obtain high level relatively brightness, can save power consumption thus and obtain fabulous picture quality by identical quantity of power.Therefore, can make the OLED of reliability with raising.
Though foregoing description has pointed out to be applied to the novel feature of the present invention of various embodiment, but the technical staff should be appreciated that and do not departing from the scope of the present invention under the situation and can carry out various omissions, replacement and change to the form and the details of illustrated device or technology.Therefore, scope of the present invention is defined by the following claims rather than is limited by the description of front.Be included in its scope in the scope of the equivalent of claim and all modification in the intention.
Claims (21)
1. organic luminescent device comprises:
Pixel layer, it comprises i) first and second electrodes and the ii) illuminating part between electrode;
Transparent component, light pass this transparent component transmission;
Diffraction grating, it is arranged between pixel layer and the transparent component; And
Forming low-refractive-index layer, it has the refractive index lower than the refractive index of transparent component, and this forming low-refractive-index layer is arranged between diffraction grating and the transparent component.
2. organic luminescent device as claimed in claim 1, transparent component wherein, forming low-refractive-index layer, diffraction grating, first electrode, the illuminating part and second electrode be sequential cascade successively, and wherein transparent component is that the substrate and first electrode are transparency electrodes.
3. organic luminescent device as claimed in claim 1, first electrode wherein, illuminating part, second electrode, diffraction grating, forming low-refractive-index layer and transparent component be sequential cascade successively, and wherein second electrode is that transparency electrode and transparent component are protective layer or seal member.
4. organic luminescent device comprises:
Pixel layer, it comprises i) first and second electrodes and the ii) illuminating part between electrode;
Transparent component, light pass this transparent component transmission;
Diffraction grating, it is arranged between pixel layer and the transparent component;
Forming low-refractive-index layer, it has the refractive index lower than the refractive index of transparent component, and this forming low-refractive-index layer is arranged between diffraction grating and the transparent component; And
Light absorbing zone, it is arranged between forming low-refractive-index layer and the transparent component.
5. organic luminescent device as claimed in claim 4, transparent component wherein, light absorbing zone, forming low-refractive-index layer, diffraction grating, first electrode, the illuminating part and second electrode be sequential cascade successively, and wherein transparent component is that the substrate and first electrode are transparency electrodes.
6. organic luminescent device as claimed in claim 4, first electrode wherein, illuminating part; second electrode, diffraction grating, forming low-refractive-index layer; light absorbing zone and transparent component be sequential cascade successively, and wherein second electrode is that transparency electrode and transparent component are protective layer or seal member.
7. organic luminescent device as claimed in claim 1, wherein transparent component is formed by glass or plastic material.
8. organic luminescent device as claimed in claim 1, wherein the refractive index that has of forming low-refractive-index layer is in about scope of 1～about 1.5.
9. organic luminescent device as claimed in claim 1, wherein forming low-refractive-index layer is by porous SiO
2Form.
10. organic luminescent device as claimed in claim 1, wherein the thickness that has of forming low-refractive-index layer is in the scope of about 100nm～about 1000nm.
11. organic luminescent device as claimed in claim 4, wherein the absorption coefficient that has of light absorbing zone is in about scope of 0.01～about 0.05.
12. organic luminescent device as claimed in claim 4, wherein light absorbing zone is by TiO
2, Ta
2O
5Or Nb
2O
5Form.
13. organic luminescent device as claimed in claim 4, wherein the thickness that has of light absorbing zone is in the scope of about 50nm～about 1 μ m.
14. organic luminescent device as claimed in claim 1, wherein diffraction grating has linear, rectangle cylindricality or cylindrical projections.
15. as the organic luminescent device of claim 14, wherein the spacing between the projection of diffraction grating is about 1/4～4 times of the light wavelength that produces from illuminating part.
16. organic luminescent device as claimed in claim 1, wherein first electrode is by ITO, IZO, ZnO or In
2O
3Form.
17. organic luminescent device as claimed in claim 1, wherein second electrode is by following Li, Ca, Al, at least a formation among Ag and the Mg.
18. make the organic light-emitting device method, comprising for one kind:
Form forming low-refractive-index layer on substrate, wherein this forming low-refractive-index layer has the refractive index lower than the refractive index of substrate;
On forming low-refractive-index layer, form diffraction grating; And
Form pixel layer, this pixel layer have first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least.
19. make the organic light-emitting device method, comprising for one kind:
On substrate, form light absorbing zone;
Form forming low-refractive-index layer on light absorbing zone, wherein this forming low-refractive-index layer has the refractive index lower than the refractive index of substrate;
On forming low-refractive-index layer, form diffraction grating; And
Form pixel layer, this pixel layer have first electrode, second electrode and be inserted in first electrode and second electrode between and have the illuminating part of luminescent layer at least.
20. as the method for claim 18, wherein diffraction grating forms by the plane that is positioned at the illuminating part direction of composition forming low-refractive-index layer.
21. as the method for claim 20, wherein composition comprises and the photoresist layer is coated on the forming low-refractive-index layer and utilizes electronic beam method or the resulting structure of laser hologram photography method composition.
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| KR1020040079240 | 2004-10-05 | ||
| KR1020040079239A KR100615257B1 (en) | 2004-10-05 | 2004-10-05 | An electroluminescent display device and a method for preparing the same |
| KR1020040079239 | 2004-10-05 |
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| CN1758819A true CN1758819A (en) | 2006-04-12 |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100615257B1 (en) | 2006-08-25 |
| CN100493287C (en) | 2009-05-27 |
| KR20060030395A (en) | 2006-04-10 |
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