CN1751885A - Bonding structure, actuator device and liquid-jet head - Google Patents

Bonding structure, actuator device and liquid-jet head Download PDF

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Publication number
CN1751885A
CN1751885A CN 200510105857 CN200510105857A CN1751885A CN 1751885 A CN1751885 A CN 1751885A CN 200510105857 CN200510105857 CN 200510105857 CN 200510105857 A CN200510105857 A CN 200510105857A CN 1751885 A CN1751885 A CN 1751885A
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bonding
line
drive
pad
spacing
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CN100418770C (en
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大胁宽成
宫田佳直
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

A bonding structure comprising bonding wires having a diameter A, bonding pads to which the bonding wires are connected, and bonding portions which, as sites of connection, are arranged on a straight line, and wherein the pitch P of the bonding portions is set at XA+sigma or more where 1.80<=X<=2.1, A is as defined above, and sigma denotes a variation for the bonding procedure.

Description

Bonding structure, actuator device and fluid jetting head
Technical field
The present invention relates to comprise the bonding structure of the bonding line that is connected to pad.More specifically, the present invention relates to such bonding structure, it is preferably applied to be equipped with the actuator device of oscillating plate and piezoelectric element, especially be preferably applied to fluid jetting head, wherein the part of the pressure generation chamber that is communicated with the jet hole that is used to spray ink droplet is made of oscillating plate, piezoelectric element is formed on the surface of oscillating plate, and ink droplet is injected by the displacement of piezoelectric layer.
Background technology
The actuator device that is equipped with the piezoelectric element of displacement by applying voltage for example is installed in the fluid jetting head that is used for liquid droplets.Be known that for example ink jet print head as such fluid jetting head, wherein the part of the pressure generation chamber that is communicated with jet hole is made of oscillating plate, and oscillating plate is out of shape with to the pressurization of the ink in the pressure generation chamber by piezoelectric element, sprays ink droplet from jet hole thus.Two types ink jet print head is put in the actual use.One of them is equipped with along the piezo-activator equipment of the longitudinal vibration mode of the axial stretching, extension of piezoelectric element and compression.Another kind is equipped with the piezo-activator equipment of beam mode.
A kind of ink jet print head in back adopts such structure, wherein for example, drive IC is installed on the plate that is attached to passage formation substrate (it has the pressure generation chamber that is formed on wherein) (for example liquid storage tank formation plate), and the end of the drive IC and the extraction electrode of drawing from each piezoelectric element is electrically connected (referring to for example Japanese Patent Application Laid-Open No.2002-160366 (the 3rd page, Fig. 2)) by bonding line by the mode of lead-in wire bonding.By using capillary that one end of bonding line is connected to the end of drive IC, then the other end of bonding line is connected to pad as the end of extraction electrode, finish the lead-in wire bonding that in the production of such ink jet print head, carries out.
For ink jet print head, people attempt to dwindle the size of the assembly that is mounted, and the high-density arrangement vibrator.For the also demanding density of equipment wiring of using bonding line.When fitting key zygonema obliquely, preferably arrange bonding line, so that dwindle the size of assembly with wide-angle.From the viewpoint of the high-density installation of vibrator, preferably reduce the spacing of bonding line in addition, to increase density.
Therefore, be used for applying obliquely bonding line to realize that the technology that size is dwindled is known (for example, Japanese Patent Application Laid-Open No.2003-31610 (Fig. 1,4 and 5)) so far.But conventional art is also unqualified to go out optimal spacing or angle, and the optimum state that regulation is arranged is desired.And, according to conventional art, by tortuous the layout to prevent to contact with adjacent line of bonding point obtained narrow spacing.But, consider the size of dwindling the assembly that is mounted, bonding point should preferably be disposed on the straight line.
The problems referred to above are not only for the fluid jetting head such as ink jet print head, and exist too for the equipment with bonding line syndeton that uses the semiconductor element such as LSI and IC.
Summary of the invention
According to above-mentioned situation, finished the present invention.The purpose of this invention is to provide a kind of bonding structure, this bonding structure limits the The optimum layout state that can guarantee high-density wiring for the equipment that uses bonding line.
Another object of the present invention provides a kind of actuator device and fluid jetting head, and it adopts qualification can guarantee the bonding structure of the The optimum layout state of high-density wiring for the equipment that uses bonding line.
Be used to realize that a first aspect of the present invention of above-mentioned purpose is a kind of bonding structure, comprising: many bonding lines have diameter A; A plurality of pads, described bonding line are connected on the described pad; With a plurality of bonding parts as link position, described bonding part branch is arranged on the straight line, and wherein, and the spacing P between described bonding part divides is set as XA+ σ or bigger, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
According to described first aspect, can standard can provide the optimum state of institute's layout bonding spacing P partly of high-density wiring by the equipment that uses bonding line
A second aspect of the present invention is a kind of bonding structure, comprising: many bonding lines have diameter A; A plurality of pads, described bonding line are connected on the described pad; With a plurality of bonding parts as link position, described bonding part branch is arranged on the straight line, and wherein, described bonding line is to arrange with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of described bonding part, and the spacing of described bonding part is set as (XA+ σ)/cos θ or bigger, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
According to second aspect, can standard can provide the optimum state of institute's bonding of being arranged spacing P partly of high-density wiring for the equipment that uses the bonding line of arranging in the mode of tilt angle theta.
A third aspect of the present invention is a kind of bonding structure, comprising: many bonding lines have diameter A; A plurality of pads, described bonding line are connected on the described pad; With a plurality of bonding parts as link position, described bonding part branch is arranged on the straight line, and wherein, spacing P between described bonding part divides is set as XA+ σ or bigger, 1.80≤X≤2.1 wherein, and A is as defined above, σ represents the error of bond sequence, and wherein, described bonding line to be arranging with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of described bonding part, and make described angle θ less than cos -1(XA+ σ)/spacing P}, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
The optimum state that institute's bonding of being arranged spacing P partly of high-density wiring according to a third aspect of the invention we, can standard can be provided for the equipment that uses the bonding line of arranging in the mode of tilt angle theta.
A fourth aspect of the present invention be according to first in the third aspect each described bonding structure, it is characterized in that the surface that each each root with in the described bonding line in the described at least pad contacts comprises gold.
According to fourth aspect, used the pad that comprises gold, can be arranged with best configuration so comprise the bonding line of gold, and by bonding reliably.
A fifth aspect of the present invention is according to first aspect each described bonding structure in the fourth aspect, it is characterized in that in the described pad each is connected to the end portion of the drive IC of the drive part that is used for drive actuator equipment.
According to the 5th aspect, bonding line can be placed in optimal placement with respect to the pad that is arranged on the drive IC, and by bonding reliably.
A sixth aspect of the present invention is according to the described bonding structure in the 5th aspect, it is characterized in that each root in the described bonding line has an end of the described end portion that is connected to described drive IC, and have the other end that the direction of carrying out along described bond sequence is connected to the end portion of extraction electrode backward.
According to the 6th aspect, consider to be arranged on the bonding shape partly of the other end, can determine optimal placement.
A seventh aspect of the present invention is a kind of actuator device, comprising: oscillating plate is arranged on the surface of substrate; A plurality of piezoelectric elements, each in the described piezoelectric element is by forming by the set bottom electrode of described oscillating plate, piezoelectric layer and top electrode; Drive IC is used to drive described piezoelectric element; And pad, be connected to the end portion of described drive IC, and wherein bonding line by as pad as described in each described bonding structure is connected in first aspect to the six aspects.
According to the 7th aspect, actuator device can be provided with the bonding structure with the bonding part that is in the optimal placement state, and described bonding structure can provide high-density wiring for the equipment that uses bonding line.
A eighth aspect of the present invention is a kind of fluid jetting head, comprising: as the described actuator device in the 7th aspect; Form substrate with passage, the pressure generation chamber that is communicated with jet hole is formed on described passage and forms in the substrate, and described actuator device is set on the surface of described passage formation substrate.
According to eight aspect, use the wiring of the equipment of bonding line can be with high-density arrangement, the width of pad can be by constriction, and jet hole can be arranged with high density.
Description of drawings
In order to understand the present invention and advantage thereof more all sidedly, now come in conjunction with the accompanying drawings with reference to following description.
Fig. 1 is the decomposition diagram of fluid jetting head according to an embodiment of the invention.
Fig. 2 (a) and 2 (b) are respectively the plane and the sectional view of fluid jetting head according to an embodiment of the invention.
Fig. 3 (a) and 3 (b) show the sectional view of the major part of the bonding structure that goes between according to an embodiment of the invention.
Fig. 4 shows the plane of the major part of the bonding structure that goes between according to an embodiment of the invention.
Fig. 5 shows the sectional view of state capillaceous.
Fig. 6 shows the plane of the major part of lead-in wire bonding structure according to another embodiment of the present invention.
The specific embodiment
To describe the present invention in detail based on the following embodiment that provides now.
Fig. 1 shows the decomposition diagram of fluid jetting head according to an embodiment of the invention.Fig. 2 (a) and Fig. 2 (b) are respectively the plane and the sectional view of the fluid jetting head among Fig. 1.
The passage of constructing fluid jetting head in the present embodiment forms substrate 10 and is made of monocrystalline substrate.Be formed on the surface that passage forms substrate 10 by the elastic membrane of forming by the preformed silica of thermal oxide 50.Form in the substrate 10 at passage, the anisotropic etching that a plurality of pressure generation chambers 12 that are separated out by a plurality of partition walls 11 are undertaken by another surface that forms substrate 10 from passage forms.Vertical outside of the pressure generation chamber 12 of embarking on journey in layout, form connected component 13, connected component 13 be arranged on the liquid storage tank part 32 that liquid storage tank forms in the plate 30 (will being continued to describe in the back) and be communicated with, serve as the liquid storage tank 100 of the public fluid chamber that is used for each pressure generation chamber 12 with formation.Connected component 13 also is communicated with an end longitudinally of each pressure generation chamber 12 by liquid feed path 14.Wherein boring has the nozzle plate 20 of jet hole 21 to be secured to the open surfaces that passage forms substrate 10 by bonding agent or heat-sealing film.Jet hole 21 is communicated with pressure generation chamber 12 in a side opposite with liquid feed path 14.Nozzle plate 20 comprises glass ceramics, monocrystalline substrate or stainless steel, and its thickness is for example 0.01 to 1mm and at 300 ℃ or when lower, its linear expansion coefficient is for for example 2.5 arriving 4.5[* 10 -6/ ℃]
On a side opposite with the open surfaces of passage formation substrate 10, forming thickness for example is the elastic membrane 50 of about 10 μ m, as mentioned above.Thickness for example is formed on the elastic membrane 50 for the dielectric film 55 of about 0.4 μ m.On dielectric film 55, thickness for example for the lower electrode film 60 of about 0.2 μ m, thickness for example for the upper electrode film 80 that the piezoelectric layer 70 of about 1.0 μ m and thickness are about 0.05 μ m is formed with stacked state by certain technology (will be described later), with structure piezoelectric element 300.Piezoelectric element 300 is meant the part that comprises lower electrode film 60, piezoelectric layer 70 and upper electrode film 80.In general, one in the electrode of piezoelectric element 300 is used as public electrode, and another electrode and piezoelectric layer 70 by patterning by at each pressure generation chamber 12 structure.Be called as the piezoelectric activity part by the part that any one is formed in electrode that has been patterned and the piezoelectric layer 70 and piezoelectricity deformation takes place during to two electrode application voltage.In the present embodiment, lower electrode film 60 is used as the public electrode that is used for a plurality of piezoelectric elements 300, and upper electrode film 80 is used as the individual electrode of each piezoelectric element 300.But the purposes for the convenience of drive circuit or wiring with them does not have harm conversely.In arbitrary situation, all adopt for each pressure generation chamber and form the piezoelectric activity part.At this, the oscillating plate that piezoelectric element 300 and the driving by piezoelectric element 300 are subjected to displacement jointly is called piezo-activator.
In the example in front, the lower electrode film 60 of piezoelectric element 300, elastic membrane 50 and dielectric film 55 play the effect of oscillating plate.Extraction electrode 90 from the upper electrode film 80 of piezoelectric element 300 vertically on the end near the position extend near the end of pressure generation chamber 12 that passage forms substrate 10 position as lead-out wiring.Extraction electrode 90 for example comprises the wiring metal layer of gold (Au) or aluminium (Al) and is arranged on for example titanium tungsten (TiW) on the downside of gold layer or the bonding metal layer of nickel chromium triangle (NiCr).
Pass through hole 33 as the fore-end of extraction electrode 90 and the end portion 90a that comprises gold via bonding line 120 and be electrically connected to drive IC 110 (will continue in the back to discuss).
Liquid storage tank with liquid storage tank part 32 of at least a portion that constitutes liquid storage tank 100 forms plate 30 and is engaged on the passage formation substrate 10 by bonding agent 35, and wherein above-mentioned piezoelectric element 300 has been formed on described passage and has formed on the substrate 10.In the present embodiment, liquid storage tank part 32 is formed in and penetrates liquid storage tank on the thickness direction that liquid storage tank forms plate 30 and form plate 30, and extends along the width of pressure generation chamber 12.As previously described, liquid storage tank part 32 is communicated with the connected component 13 that passage forms substrate 10, serves as the liquid storage tank 100 of the public fluid chamber that is used for each pressure generation chamber 12 with formation.
Be provided with piezoelectric element retaining part 31 in the zone relative with piezoelectric element 300 that forms plate 30 at liquid storage tank, it has the space of moving that can not hinder piezoelectric element 300.Form being defined in the zone between liquid storage tank part 32 and the piezoelectric element retaining part 31 of plate 30 at liquid storage tank, be provided with through hole 33, described through hole 33 forms at liquid storage tank and penetrates liquid storage tank on the thickness direction of plate 30 and form plate 30.Extraction electrode 90 as the lead-out wiring of drawing from each piezoelectric element 300 has end and the adjacent domain that is exposed to the through hole 33.The material that is used for the liquid storage tank formation plate 30 of such structure for example is glass, ceramic material, metal or resin.Preferably, liquid storage tank formation plate 30 is formed by the material much at one that its thermal coefficient of expansion and passage form substrate 10.In the present embodiment, liquid storage tank forms plate 30 by forming as being used for the monocrystalline substrate that passage forms the same material of substrate 10.
The drive IC 110 that is used to drive each piezoelectric element 300 is set at liquid storage tank and forms plate 30.One end of bonding line 120 is connected to each end portion 111 of drive IC 110, to form the first bonding part 201.The other end of bonding line 120 is connected to the extraction electrode 90 end portion 90a as pad, to form the second bonding part 202 (referring to the Fig. 4 that will be described later).The linear diameter of bonding line 120 is for example 20 μ m, and for example, linear diameter is 20 μ m and comprises that the bonding line 120 of gold (Au) is used to present embodiment.
Shown in Fig. 1 and 2 (a), 2 (b), flexible board 40 is engaged to liquid storage tank and forms on the plate 30.In the relative zone of flexible board 40 and liquid storage tank 100, the area limiting that is different from liquid inlet port 44 goes out flexible portion 43, and described flexible portion 43 is formed on the thickness direction very thin.Liquid storage tank 100 is by flexible portion 43 sealings.Flexible portion 43 provides compliance for the inside of liquid storage tank 100.
Use description to the end portion 111 as the drive IC 110 of pad is connected to by bonding line 120 the lead-in wire bonding structure of the end portion 90a of extraction electrode 90 to Fig. 5 with reference to figure 3 (a), 3 (b).
Fig. 3 (a) and 3 (b) show the sectional view of the major part of the bonding structure that goes between according to an embodiment of the invention.Fig. 4 shows the plane of the major part of the bonding structure that goes between according to an embodiment of the invention.Fig. 5 shows the sectional view of state capillaceous.For simplicity of illustration explanation, its ratio etc. of being illustrated in aspect of the external diameter of the diameter of bonding line 120 and capillary 130 is provided with the state that is different from virtual condition in the drawings.
Shown in Fig. 3 (a), bonding line 120 passes the capillary 130 that constitutes the lead-in wire bonding apparatus by insertion and is held, and is connected to the end portion 111 of drive IC 110 by ball bonding, to form the first bonding part 201.The method of attachment of passing through ball bonding like this is by forming the fusing of the front end of bonding line 120 in ball and the end portion 111 that this ball presses drive IC 110 being carried out.
Then, shown in Fig. 3 (b), bonding line 120 is connected to the end portion 90a as the extraction electrode 90 of pad.At this moment, by bonding line 120 is heated bonding line 120 simultaneously and applies ultrasonic wave by the end portion 90a that capillary 130 presses extraction electrode 90, bonding line 120 is connected.By this operation, the second bonding part, 202 (see figure 4)s with pressing width are formed.
As shown in Figure 4, the first bonding part 201 with linear diameter A (for example, 20 μ m) bonding line 120 is arranged on the straight line with preset space length P.The first bonding part 201, is promptly sequentially arranged along bonding travel direction (wherein the top of bond sequence from figure carry out downwards direction) to the below by the top from figure.
The direction (direction of bonding line 120) of the second bonding part 202 on bonding line and the first bonding part, 201 opposite ends sides is with respect to perpendicular to the arranged direction of the first bonding part 201 (promptly, above-below direction among the figure) direction (that is the left and right directions among the figure) tilt angle theta.The direction at this angle θ place (promptly downward in the drawings) backward on the bonding travel direction.Spacing P and angle θ are configured to guarantee that capillary 130 and bonding line 120 discontiguous minimum clearance x can be held.
If linear diameter A is for example 20 μ m, then the feasible outer diameter D of capillary 130 is the scope of 2.60A to 3.20A.If the outer diameter D of capillary 130 is less than 2.60A, then capillary 130 will be too little with respect to linear diameter A.This will cause and can not bonding line 120 be pressed end portion 90a heating bonding line 120 and apply ultrasonic wave simultaneously fully by capillary 130, and the second bonding part 202 that has a pressing width to formation is brought difficulty thus.If on the other hand, the outer diameter D of capillary 130 is greater than 3.20A, and then capillary 130 will be too big with respect to linear diameter A.This will cause bonding line 120 being pressed end portion 90a reliably by capillary 130 and suitably apply simultaneously ultrasonic wave, and the second bonding part 202 that has a pressing width to formation is brought difficulty thus.
The spacing P of the first bonding part 201 can be set based on each distance, the cosine value of angle θ and the relation the x of gap from the reference position to the first bonding part 201.In other words, as can be seen from Figure 4, be used to keep the spacing P of gap x best for as follows:
Spacing P=(1/cos θ) { x+ (A+D)/2}
For example, when capillary 130 when to have scope be 2.65A to the outer diameter D of 3.18A,
The error of spacing P * cos θ=x+ (1.82~2.09) A hypothesis bonding operation is σ, and then x-σ>0 means that the capillary 130 that is closely adjacent to each other and line 120 are according to its relation that can not contact.Therefore, following relation of plane is set up:
Spacing P * cos θ-(1.82~2.09) A-σ=x-σ>0.About error σ, 3 σ (99.7%) are the order of magnitude of 10 μ.Because must consider 3 σ or more for practicality, so hypothesis σ=10 μ as product.Based on this hypothesis and by P * cos θ-(1.82~2.09) A>σ,
P×cosθ-(1.82~2.09)A>10。This can be represented as:
Spacing P>[(1.82~2.09) A}+10]/cos θ
If 0<θ<90, then it satisfies 0<cos θ<1.Therefore, when linear diameter is A and angle when being θ, spacing P is set as that { (1.82~2.09) A+10} or littler can keep the minimum clearance x that keeps capillary 130 and bonding line 120 can not contact thus.
And when linear diameter is A and angle when being θ, spacing P is set as that { (1.82~2.09) A+10}/cos θ or bigger, minimum clearance x can be kept thus.
In addition, angle θ is set to and is not more than [cos -1(1.82~2.09) A+10}/spacing P], minimum clearance x can be kept thus.
Therefore, the spacing P of the first bonding part 201 with bonding line 120 of diameter A is set to XA+ σ or bigger (1.80≤X≤2.1), and wherein σ represents the error of bond sequence.The optimum state of spacing P that the bonding part of high-density wiring like this, can standard can be provided for the equipment that uses bonding line 120.
And, the first bonding part 201 with bonding line 120 of diameter A is disposed on the straight line, bonding line 120 to be being arranged with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of the first bonding part 201, and the spacing P of the first bonding part 201 be set to (XA+ σ)/cos θ or bigger (1.80-≤X≤2.1) wherein σ represent the error of bond sequence.The optimum state of spacing P that the first bonding part 201 of being arranged of high-density wiring like this, can standard can be provided for the equipment that uses the bonding line of arranging in the mode of tilt angle theta 120.
In addition, the first bonding part 201 with bonding line 120 of diameter A is disposed on the straight line, and the spacing P of the first bonding part 201 is set to XA+ σ or bigger (1.80≤X≤2.1), and wherein σ represents the error of bond sequence.And bonding line 120 to be being arranged with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of the first bonding part 201, and makes angle θ less than cos -1{ (XA+ σ)/spacing P} (1.80≤X≤2.1), wherein σ represents the error of bond sequence.Optimum state and the best angle θ of spacing P that the first bonding part 201 of being arranged of high-density wiring like this, can standard can be provided for the equipment that uses the bonding line of arranging in the mode of tilt angle theta 120.
As shown in Figure 6, the direction of the second bonding part 202 (direction of bonding line 120) can be set as on the bonding travel direction and (that is, make progress in the drawings) forward.This has eliminated and has considered the external diameter of capillary 130 and the necessity of the gap x between the bonding line 120, and it can satisfy the external diameter of only considering capillary 130 with respect to the second bonding part 202.Therefore, even the spacing Px of the first bonding part 201 is set to little value, capillary 130 can not disturb with bonding line 120 yet.
But, in the case, the relation between the external diameter of necessary consideration second bonding part 202 and capillary 130.Because the second bonding part 202 has wide pressing district, thus capillary 130 disturb with the pressing district, if the spacing Px of the first bonding part 201 is little.Therefore, the spacing of the second bonding part 202 need become big.As a result, the spacing Px of the first bonding part 201 must be increased, and need be than the aforementioned intervals P of the first bonding part 201 bigger spacing Px.Perhaps, must adopt the layout of avoiding from the interference of the adjacent second bonding part 202 (for example, complications arrange that the spacing of the second bonding part 202 of perhaps wherein being arranged is greater than the layout of Px), make corresponding space necessitate thus.
In order to make the bonding part of winning divide 201 spacing P to minimize using under the situation of the confined space, optimum is to set the spacing P of the first bonding part 201 and the tilt angle theta of bonding line 120, as among Fig. 4 shown in the illustrated present embodiment.
In the present embodiment, the end portion 90a of the end portion 111 of drive IC 110 and extraction electrode 90 is electrically connected to together by the bonding line 120 that is connected by above-mentioned lead-in wire bonding structure.Wire bonding method described above and be used for the syndeton of bonding line can be applied to all electrodes that will connect by bonding line of fluid jetting head.Be different from the end portion 90a that is used for extraction electrode 90 bonding line other bonding lines be exemplified as the bonding line that is used to connect lower electrode film 60 and drive IC 110, and be used for and will be formed on the bonding line that the end portion of lip-deep cloth line electrode that liquid storage tank forms the supporting drive IC 110 of plate 30 is connected to the end portion of drive IC 110, bonding line although it is so is not illustrated.
Present embodiment shows and is used for the especially wire bonding method on the fluid jetting head of actuator device, and the bonding line syndeton that has formed by the method.But, the invention is not restricted to this, and can be applied to use other equipment of bonding line, for example semiconductor equipment.Should be appreciated that, can carry out these variations, substitute and replace at this, and not depart from the spirit and scope of the present invention that limit by claims.

Claims (8)

1. bonding structure comprises:
Many bonding lines have diameter A;
A plurality of pads, described bonding line are connected on the described pad; With
As a plurality of bonding parts of link position, described bonding part branch is arranged on the straight line, and
Wherein, the spacing P between described bonding part divides is set as XA+ σ or bigger, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
2. bonding structure comprises:
Many bonding lines have diameter A;
A plurality of pads, described bonding line are connected on the described pad; With
As a plurality of bonding parts of link position, described bonding part branch is arranged on the straight line, and
Wherein, described bonding line is to arrange with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of described bonding part, and the spacing of described bonding part is set as (XA+ σ)/cos θ or bigger, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
3. bonding structure comprises:
Many bonding lines have diameter A;
A plurality of pads, described bonding line are connected on the described pad; With
As a plurality of bonding parts of link position, described bonding part branch is arranged on the straight line, and
Wherein, the spacing P between described bonding part divides is set as XA+ σ or bigger, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence, and
Wherein, described bonding line to be arranging with respect to the mode perpendicular to the direction tilt angle theta of the arranged direction of described bonding part, and makes described angle θ less than cos -1(XA+ σ)/spacing P}, 1.80≤X≤2.1 wherein, A as defined above, σ represents the error of bond sequence.
4. according to each described bonding structure in the claim 1 to 3, the surface that each root with in the described bonding line of each in the wherein described at least pad contacts comprises gold.
5. according to each described bonding structure in the claim 1 to 3, each in the wherein said pad is connected to the end portion of the drive IC of the drive part that is used for drive actuator equipment.
6. bonding structure according to claim 5, each root in the wherein said bonding line has an end of the described end portion that is connected to described drive IC, and has the other end that the direction of carrying out along described bond sequence is connected to the end portion of extraction electrode backward.
7. actuator device comprises:
Oscillating plate is arranged on the surface of substrate;
A plurality of piezoelectric elements, each in the described piezoelectric element is by forming by the set bottom electrode of described oscillating plate, piezoelectric layer and top electrode;
Drive IC is used to drive described piezoelectric element; With
Pad is connected to the end portion of described drive IC, and
Wherein bonding line is by as pad as described in each described bonding structure is connected in the claim 1 to 6.
8. fluid jetting head comprises:
Actuator device as claimed in claim 7; With
Passage forms substrate, and the pressure generation chamber that is communicated with jet hole is formed on described passage and forms in the substrate, and described actuator device is set on the surface of described passage formation substrate.
CNB2005101058570A 2004-09-24 2005-09-23 Bonding structure, actuator device and liquid-jet head Expired - Fee Related CN100418770C (en)

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CN112543703A (en) * 2018-07-30 2021-03-23 锡克拜控股有限公司 Multi-chip module (MCM) package and print bar
CN112543703B (en) * 2018-07-30 2022-07-01 锡克拜控股有限公司 Multi-chip module (MCM) package and print bar
US11571894B2 (en) 2018-07-30 2023-02-07 Sicpa Holding Sa Multi-chip module (MCM) assembly and a printing bar

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