CN1749448A - Germanium blending method for zone-melting silicon monocrystal by liquid smearing method - Google Patents
Germanium blending method for zone-melting silicon monocrystal by liquid smearing method Download PDFInfo
- Publication number
- CN1749448A CN1749448A CN 200510014891 CN200510014891A CN1749448A CN 1749448 A CN1749448 A CN 1749448A CN 200510014891 CN200510014891 CN 200510014891 CN 200510014891 A CN200510014891 A CN 200510014891A CN 1749448 A CN1749448 A CN 1749448A
- Authority
- CN
- China
- Prior art keywords
- germanium
- silicon
- zone
- liquid
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to liquid smearing process of doping germanium to zone melting silicon monocrystal. Hydrochloric acid solution containing germanium element is smeared to the surface of silicon monocrystal, and after stoving, the silicon monocrystal is loaded into zone melting furnace for zone melting or monocrystal growth in conventional process. The process as one ideal germanium doping has controllable germanium concentration in silicon, no contamination and high silicon monocrystal quality.
Description
Technical field
The present invention relates to semiconductor material, particularly a kind of germanium blending method of liquid streak method zone-melted silicon single crystal.
Background technology
Silicon single-crystal is the functional materials of electronic industry, its range of application, industrial scale all be other semiconductor material can not compare.Mix certain impurity and can change certain character of silicon single-crystal in silicon, can make silicon single-crystal have electronic conduction character such as mixing phosphorus arsenic, boron-doping can make it have hole conduction character.Nitrating can improve the physical strength of zone-melted silicon single crystal.Mix germanium in the silicon and belong to equivalent Doping, it does not change the conduction property of monocrystalline, and the lattice mismatch that causes because of silicon, the germanium covalent radius in crystal close (silicon is 1.07 dusts, and germanium is 1.22 dusts) is very little again, and is therefore little to the influence of silicon single-crystal perfection of lattice.Recent research shows that mixing germanium in the silicon is all having good effect aspect inhibition point defective, vaporific defective and the gettering.Aspect physical strength that improves monocrystalline and the research of crystalline anti-radiation performance very big progress is being arranged all also.Yet these work are mostly carried out in czochralski silicon monocrystal.It mainly is to mix phosphorus method (being the NTD method) with neutron transmutation at present that zone-melted silicon single crystal mixes.Also there are gas phase doping method and liquid phase to smear and mix the phosphorus method, mainly in order to control the electron density (being N type resistivity) of electronic conduction.Chinese patent 03109067.2 discloses the production method of the zone-melted silicon single crystal of pre-doping of gas phase and neutron irradiation doping combination.The method and the technology thereof of mixing germanium about zone-melted silicon single crystal yet there are no report.
Summary of the invention
The germanium blending method that the purpose of this invention is to provide a kind of liquid streak method zone-melted silicon single crystal.The present invention is the ideal germanium blending method, realizes the control of ge content in the monocrystalline and mixes the inhomogeneity control of germanium.Not only make germanium mix to such an extent that enter, and the concentration homogeneous and controllable of germanium in silicon, mix germanium technology and do not have contamination, guaranteed the quality of silicon single-crystal.
The present invention is to use the solution liquid that contains element Ge to spread upon the surface of silicon single-crystal, installs to after the oven dry on the zone melting furnace, by molten melting in common process of smelting district, district or growing single-crystal.
Concrete steps of the present invention are:
1) selects for use and mix the element Ge material, use dissolution solvent will mix the element Ge material dissolves and be saturated solution, and with dilution reagent the saturated solution of element Ge is diluted to and satisfies the germanium solution that in silicon, mixes different germanium concentration needs;
2) silicon rod of needs being mixed germanium carries out common acid corrosion and pure water clean, and oven dry, be placed in the operation box,
3) by mixing the germanium metered volume above-mentioned germanium solution is evenly spread upon on the silicon rod surface;
4) install on the zone melting furnace after will smearing back silicon rod oven dry, by molten melting in common process of smelting district, district or growing single-crystal.
Described element Ge material is the oxide compound of germanium simple substance or germanium; Described solvent is HCl.
The described germanium metered volume V that mixes
BNeed be applied to the volume of the solution of (length L of silicon rod, radius R are known) on the silicon rod exactly.V
BShould satisfy following formula:
V
B＝KC
Ge·πR
2L/C
B
K is a correction factor, and it is the difference of reflection Theoretical Calculation and actual doping process.C
Ge(cm
3) germanium concentration for needing in the silicon to mix, C
B(cm
3) be germanium concentration in the B doping liquid, π R
2L is the volume of silicon rod.
The present invention specifically selects technical scheme to comprise the steps:
1) selects that to mix the element Ge material be three oxidations, two germanium for use, use hydrochloric acid that three oxidations, two germanium are dissolved as saturated solution, and the saturated solution of element Ge is diluted to the hydrochloric acid soln that satisfies the germanium that mixes different germanium concentration needs in silicon with ethanol; The hydrochloric acid soln of for example saturated germanium and alcoholic acid volume ratio are made into: 1: 10-100.When mixing germanium, need be higher if mix the germanium amount in the silicon, can use high dense doped germanium solution.Need hang down the doped germanium solute doping liquid that can use lower concentration if mix the germanium amount.
2) silicon rod of needs being mixed germanium carries out common acid corrosion and pure water clean, and oven dry, be placed in the operation box,
3) by mixing the germanium metered volume above-mentioned germanium solution is evenly spread upon on the silicon rod surface;
4) will smear the back silicon rod and install on the zone melting furnace after under infrared lamp, dry, melt melting or growing single-crystal by common process of smelting district, district.
Germanium blending method of the present invention is realized the control of ge content in the monocrystalline and is mixed the inhomogeneity control of germanium.Not only make germanium mix to such an extent that enter, and the concentration homogeneous and controllable of germanium in silicon, the flexural strength of mixing the germanium sample is bigger than common sample, promptly mixes the physical strength that germanium can improve silicon chip.Simultaneously, it is better than the anti-radiation performance of common sample to mix the sample of germanium.The present invention mixes germanium technology does not have contamination, can guarantee the quality of silicon single-crystal.
Description of drawings
Fig. 1 is that the present invention smears and mixes the germanium operation chart.
Fig. 2 is the molten synoptic diagram of high frequency region.
Embodiment
Embodiment:
Development Φ 50mm,＜111〉crystal orientation, N type conduction, resistivity 30 ± 2 Ω cm mix the germanium zone-melted silicon single crystal.
1, major equipment and starting material
Zone melting furnace: QR-20 type zone melting furnace, operating frequency 2～3MHz, output rating 20kW.
Mix operation as shown in Figure 1,1, be used for the shove charge anchor clamps, 2, quartz holder, 3, wait to mix the silicon rod (wherein shadow part is that silicon rod has been smeared part) of germanium, 4, medical needle tubing (sucked V
BDoping liquid), 5, operation box, make with synthetic glass.(it has a loam cake, after doping is finished, should cover loam cake).。
Polycrystalline silicon rod: diameter of phi 34～36mm, basic phosphorus N type, 1000 ± 200 Ω cm, minority carrier life time is greater than 1000 μ s.Base boron P type is greater than 3000 Ω cm.Factory provides by the mount emei semiconductor material.
Three oxidations, two germanium (Ge
2O
3): white powder, purity 99.995% (5 " nine ").
Mixing with hydrochloric acid and ethanol is that (concentration is 38% to the pure hydrochloric acid of electronics.) and dehydrated alcohol, the HF that high-purity clean is used, HNO
3, acetone, dehydrated alcohol is that top grade is pure, deionized water purity is greater than 18M.
2, implement the detecting instrument of usefulness
The various testers of the various parameters of monocrystalline (comprising crystal orientation, conduction type, resistivity, minority carrier life time and lattice defect) are provided by applying unit and test, and carry out corresponding national standards.
Ge content in the monocrystalline is provided data, and is deferred to national standard by the neutron radioactivation analysis instrument test of Chinese nuclear power research institute.
3, specific implementation process
1) polycrystalline silicon rod (its length and diameter meet the requirement of zone melting furnace) of needs being mixed germanium is placed in the special-purpose etching tank, uses HF: HNO
3=1: the mix acid liquor about 3 corroded about 5～10 minutes.Take out silicon rod washed with de-ionized water 15～20 times then.
2) it is stand-by that the silicon rod that cleans with sour water is placed on the special bake oven oven dry, and temperature is less than 500 ℃.
3) will mix the molten melting in syringe needle, needle tubing, operation box and district that germanium uses and deoil with acetone and dehydrated alcohol scouring, then repeatedly, dry stand-by with washed with de-ionized water with anchor clamps, shove charge instrument and furnace chamber.
4) with Ge
2O
3Be made into saturated solution with hydrochloric acid, germanium concentration is 4 * 10 in the present embodiment as calculated
20Cm
-3
5) the last doping liquid of this example is mixed germanium liquid with B number,, is mixed with saturated solution: dehydrated alcohol=1: 100 that is.The germanium concentration that calculates is 4 * 10
18Cm
-3, the correction factor of experiment is K=1.15.
Thinner must be selected dehydrated alcohol for use, can dissolve mutually veritably to guarantee hydrochloric acid and dehydrated alcohol, and is not stratified, do not precipitate, and utilizes dehydrated alcohol volatility consumingly.
6) to extract volume out with needle tubing the germanium liquid be V from mixing for B number
BDoping liquid.V
BMethod of calculation be:
Wherein, K=1.15; L and R are length and the radiuses of mixing the germanium silicon rod, can directly measure, and silicon rod length L=30cm in this example, radius R=1.7cm (is a diameter of phi=34mm); C
B=4 * 10
18Cm
-3C
GeBeing the expection concentration of mixing germanium in silicon, is 10 in this example
17Cm
-3As calculated, V in this example
B=7.8cm
3
7) operation box is placed on the place of air draft, will be through 1), 2) silicon rod of two technologies is placed on the operation box quartz holder.
8) with cleaned needle tubing from 5) B that makes the technology mixes in the germanium liquid, the extraction volume is V
B=7.8cm
3Liquid, the silicon rod in operation box is mixed germanium liquid on slowly dripping equably from left to right, as shown in Figure 1.
9) will drip and have the silicon rod of mixing germanium liquid under infrared lamp, to dry, or dry naturally.
10) silicon rod of liquid being mixed germanium installs to the sweeping through the material technology in the zone melting furnace chamber district process of smelting, with the Ge on silicon rod surface
2O
3District's fusing from down to up is one time equably, makes the polycrystalline silicon rod that is mixed with certain ge content, as shown in Figure 2.
Fig. 2 is the molten synoptic diagram of high frequency region.6, go up anchor clamps, 7, silicon rod, 8, high frequency heating coil, 9, the preheating fork, 10, seed holder, 11, the furnace chamber lower shaft, 12, axle on the furnace chamber, 13, the Ar inlet mouth, 14, the Ar air outlet, 15, vacuum system, 16, the zone melting furnace chamber, 17, high-frequency current generator.
11) the germanium silicon rod of mixing that will distinguish fusing one time (sweeping through the material) takes out from zone melting furnace, carries out tests such as conductivity model, resistivity.At this moment, the size of conductivity model, resistivity and former polycrystalline silicon rod there is no too big difference.
12) with sweeping through the material technology mix the germanium silicon rod, through 1), 2) handle, prepare to be used for growing by zone melting monocrystalline technology.
13) k-factor has reflected that Theoretical Calculation and experiment mix the deviation between the germanium, can determine by mixing germanium experiment and test several times.The measuring method of using calibration is the neutron activation method with standard.
4, mix the growth of germanium zone-melted silicon single crystal
With in " specific implementation process " 10) the ready germanium silicon rod of mixing installs to the zone melting furnace chamber again, and loads onto seed crystal.Vacuumize, when vacuum tightness reaches 1 * 10
-2During mmHg, feed high-purity Ar (99.995%), according to growing by zone melting monocrystalline technology growing single-crystal.Single crystal growing will be passed through preheating, welding seed crystal, seeding, drawing-down neck, shouldering, isodiametric growth, finishes up, breaks, stops the supple of gas or steam, blowing out, tear technological processs such as stove open.(annotate: molten sweeping through the material in district and monocrystalline growing process have been very sophisticated technology in the semiconductor silicon material specialty, and all there are working specification and technical process in corresponding unit, seldom chats at this.)
The molten parameter of mixing the germanium silicon single-crystal in the district that this example grows out is: N type,＜111 〉, diameter of phi 50mm, resistivity 600～800 Ω cm, resistivity radially ununiformity less than 20%, minority carrier life time 800～1000 μ s, dislocation-free, no whirlpool.
5, neutron transmutation doping technology
Neutron transmutation doping method (NTD) is to mix phosphorus technology in the state-of-the-art silicon, is a kind of phosphorus method of mixing that generally adopts both at home and abroad.This method has realized pollution-free doping, can increase substantially the radial and axial resistivity evenness of silicon single-crystal, makes the zone-melted silicon single crystal quality obtain unprecedented raising.Its ultimate principle is, silicon single-crystal is placed on carries out thermal neutron irradiation in the reactor, makes Siliciumatom nuclear catch a thermal neutron, by
30Si becomes
31Si,
31Si emits gamma-rays and becomes through transmuting in 2.6 hours
31P also reflects the β ray, and reaction formula is as follows:
(detailed content is consulted: suffering is opened up, silicon neutron transmutation doping and application thereof, and semiconductor technology, 1986,5:38).
This example is the character of mixing the germanium zone-melted silicon single crystal in order to study, so resistivity is the N type, 30 ± 2 Ω cm, and existing germanium single crystal resistivity position 600～800 Ω cm that mix, therefore sample to be delivered to China Atomic Energy Science Research Institute and carry out neutron transmutation and mix phosphorus, obtain required sample at last.
The present invention is by top technology, and the significant parameter that obtains mixing the germanium zone-melted silicon single crystal is as follows: diameter of phi 50mm, N type,＜111 〉, resistivity 30 ± 2 Ω cm, radially ununiformity is less than 10% for resistivity, and the ge content in the monocrystalline is (4 ± 2) * 10
17/ cm
3
The neutron irradiation performance that the present invention obtains mixing the physical strength of germanium silicon single-crystal and monocrystalline relatively sees Table 1 and table 2.
Two kinds of silicon chips are measured with silicon chip bending strength test method, and testing standard adopts GB GB15615-1995 to carry out.
Table 1 is mixed the physical strength of germanium silicon and ordinary silicon
| Test No. | Sample number into spectrum | Properties of samples | Counter-bending big small intensity |
| 96067 | F Ge-2 | Mix the germanium sample | 68.3(kg/mm 2) |
| 96069 | Fp-1 | Common sample | 42.7(kg/mm 2) |
The flexural strength of mixing the germanium sample as can be seen from Table 1 is more much bigger than common sample.This has also proved mixes the physical strength that germanium can improve silicon chip.
With mixing the germanium zone-melted silicon single crystal and common zone melting single-crystal has carried out neutron irradiation experiment.Observed the variation of minority carrier life time behind pre-irradiation, to prove the difference of their irradiation behaviours.Now the results are shown in table 2.
The variation of minority carrier life time before and after table 2 neutron irradiation
Ge-1 in the table, Ge-2 is for mixing the germanium sample, and N-1, N-2 are common sample, and τ 1 and τ 2 are respectively the minority carrier life time of being surveyed behind the sample pre-irradiation, Δ τ
*=(τ 1-τ 2)/τ 1 * 100/100.Sample all reduces significantly behind neutron irradiation.With Δ τ behind the irradiation under the condition
*More little, the expression anti-radiation performance is good.The middle subchannel of irradiation experiment is 1 * 10
13N/cm
2Be not difficult to find out that from table 2 sample of mixing germanium is better than the anti-radiation performance of common sample.
Claims (10)
1, a kind of germanium blending method of liquid streak method zone-melted silicon single crystal is characterized in that it comprises the steps: to use the solution liquid that contains element Ge to spread upon the surface of silicon single-crystal, installs to after the oven dry on the zone melting furnace, distinguishes molten melting or growing single-crystal.
2, a kind of germanium blending method of liquid streak method zone-melted silicon single crystal is characterized in that it comprises the steps:
1) selects for use and mix the element Ge material, use dissolution solvent will mix the element Ge material dissolves and be saturated solution, and with dilution reagent the saturated solution of element Ge is diluted to and satisfies the germanium solution that in silicon, mixes different germanium concentration needs;
2) silicon rod of needs being mixed germanium carries out common acid corrosion and pure water clean, and oven dry, is placed in the operation box; 3) evenly, contactlessly spread upon above-mentioned germanium solution on the silicon rod surface by mixing the germanium metered volume;
4) install on the zone melting furnace after will smearing back silicon rod oven dry, distinguish molten melting or growing single-crystal.
3,, it is characterized in that described element Ge material is the oxide compound of germanium simple substance or germanium according to the germanium blending method of the described liquid streak method of claim 2 zone-melted silicon single crystal.
4, according to the germanium blending method of the described liquid streak method of claim 2 zone-melted silicon single crystal, it is characterized in that described solvent is HCl, thinner is an ethanol.
5,, it is characterized in that the described germanium metered volume V that mixes according to the germanium blending method of the described liquid streak method of claim 2 zone-melted silicon single crystal
BShould satisfy following formula:
V
B＝KC
Ge·πR
2L/C
B
K is a correction factor, C
GeBe the germanium concentration of mixing in the silicon, C
BBe B doping liquid, π R
2L is the volume of silicon rod.
6, a kind of germanium blending method of liquid streak method zone-melted silicon single crystal is characterized in that it comprises the steps:
1) selects three oxidations, two germanium for use, use hydrochloric acid that three oxidations, two germanium are dissolved as saturated solution, and the saturated solution of element Ge is diluted to the hydrochloric acid soln that satisfies the germanium that mixes different germanium concentration needs in silicon with dehydrated alcohol.
2) silicon rod of needs being mixed germanium carries out common acid corrosion and pure water clean, and oven dry, be placed in the operation box,
3) by mixing the germanium metered volume above-mentioned germanium solution is evenly spread upon on the silicon rod surface;
4) will smear the back silicon rod and install on the zone melting furnace after under infrared lamp, dry, and distinguish and melt melting or growing single-crystal.
7,, it is characterized in that the hydrochloric acid soln and the alcoholic acid volume ratio of described saturated germanium is made into: 1: 10-100 according to the germanium blending method of the described liquid streak method of claim 6 zone-melted silicon single crystal.
8, according to the germanium blending method of the described liquid streak method of claim 6 zone-melted silicon single crystal, it is characterized in that described smearing when mixing germanium liquid, use medical needle tubing to suck doping liquid, be titrated on the silicon rod, with controlled doping amount and the homogeneity of smearing.
9,, it is characterized in that the described germanium metered volume V that mixes according to the germanium blending method of the described liquid streak method of claim 6 zone-melted silicon single crystal
BShould satisfy following formula:
V
B＝KC
Ge·πR
2L/C
B
K=is a correction factor, C
GeBe the germanium concentration of mixing in the silicon, C
BBe B doping liquid, π R
2L is the volume of silicon rod.
10, according to the germanium blending method of the described liquid streak method of claim 9 zone-melted silicon single crystal, it is characterized in that: described germanium metered volume: the V that mixes
B=7.8cm
3, correction factor: K=1.15, the germanium concentration of mixing in the silicon: C
Ge=10
17Cm
-3, the length L=30cm of silicon rod, the radius R=1.7cm of silicon rod, B doping liquid: C
B=4 * 10
18Cm
-3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100148917A CN100371505C (en) | 2005-08-30 | 2005-08-30 | Germanium blending method for zone-melting silicon monocrystal by liquid smearing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100148917A CN100371505C (en) | 2005-08-30 | 2005-08-30 | Germanium blending method for zone-melting silicon monocrystal by liquid smearing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1749448A true CN1749448A (en) | 2006-03-22 |
| CN100371505C CN100371505C (en) | 2008-02-27 |
Family
ID=36605099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100148917A Expired - Fee Related CN100371505C (en) | 2005-08-30 | 2005-08-30 | Germanium blending method for zone-melting silicon monocrystal by liquid smearing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100371505C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597788B (en) * | 2009-06-24 | 2011-12-07 | 浙江大学 | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| CN114134558A (en) * | 2021-11-24 | 2022-03-04 | 陕西有色天宏瑞科硅材料有限责任公司 | Method for manufacturing standard silicon wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1095505C (en) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | Vertical pulling and zone melting process of producing monocrystalline silicon |
| CN1190525C (en) * | 2001-12-06 | 2005-02-23 | 浙江大学 | Micro germanium-doped vertical-pulling silicon single crystal |
| CN1260402C (en) * | 2003-04-03 | 2006-06-21 | 天津市环欧半导体材料技术有限公司 | Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method |
-
2005
- 2005-08-30 CN CNB2005100148917A patent/CN100371505C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101597788B (en) * | 2009-06-24 | 2011-12-07 | 浙江大学 | Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen |
| CN114134558A (en) * | 2021-11-24 | 2022-03-04 | 陕西有色天宏瑞科硅材料有限责任公司 | Method for manufacturing standard silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100371505C (en) | 2008-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1317429C (en) | Process for mfg. silicon single crystal having doped high volatile foreign impurity | |
| CN109468131B (en) | Organic-inorganic perovskite scintillator for nuclear radiation detection and preparation method thereof | |
| CN113337277A (en) | Organic-inorganic hybrid copper-based halide scintillator and preparation and application thereof | |
| CN108034989A (en) | The method and device of controllable anti-solvent diffusion method for growing large scale methylamine bromine leading crystal | |
| CN109399603A (en) | A method of supercapacitor N doping porous charcoal is prepared using metal organic framework compound | |
| US20010008116A1 (en) | Method for manufacturing a cerium-doped lutetium oxyorthosilicate scintillator boule having a graded decay time | |
| JPWO2019008663A1 (en) | Gallium arsenide crystal and gallium arsenide crystal substrate | |
| CN1749448A (en) | Germanium blending method for zone-melting silicon monocrystal by liquid smearing method | |
| CN1900387A (en) | Formulation and preparation of solar energy grade silicon single crystal material | |
| WO2024077976A1 (en) | Method for simultaneously and rapidly determining chlorine, bromine and iodine by means of combination of high-temperature hydrolysis and icp-ms | |
| CN114959870A (en) | Preparation method of high-temperature pressurized iron-doped zinc selenide crystal | |
| US8801854B2 (en) | Method for evaluating metal contamination of silicon single crystal | |
| Morrison et al. | Determination of traces of boron in silicon | |
| CN108165269A (en) | A kind of fluorination lutetium potassium that phase change delay and Up-conversion Intensity greatly improve is nanocrystalline and preparation method thereof | |
| CN104562202A (en) | Crystal transformation mechanism for sapphire crystal growth equipment | |
| CN1259465C (en) | Preparation of divalent cerium ion dosed rare earth silicate scintillating crystal | |
| CN1260402C (en) | Combined gas-phase pre-doping and neutron irradiation doping area fused silicon monocrystal production method | |
| CN214300460U (en) | Rotary external heating type high-frequency induction ultra-high purity germanium single crystal preparation equipment | |
| CN114014326A (en) | White carbon black modification method and modified white carbon black | |
| CN101092746A (en) | Combined different valence ions doped crystal of lead tungstate with high light yield, and prepartion method | |
| CN114361349A (en) | Perovskite single crystal X-ray detector with small ion migration and manufacturing method | |
| CN114989004A (en) | Application of metal organogel | |
| CN105623665A (en) | Oil soluble nanometer scintillation crystal and preparation method thereof | |
| CN112064115A (en) | Cs (volatile organic Compounds)4PbI6Perovskite crystal, preparation method and application | |
| CN1786295A (en) | Equipment and method of lifting phthalocganine compound mono crystal growth by evaporation process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |