CN1746639A - Pyroelectric unit infrared detector and production thereof - Google Patents
Pyroelectric unit infrared detector and production thereof Download PDFInfo
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- CN1746639A CN1746639A CN 200510021654 CN200510021654A CN1746639A CN 1746639 A CN1746639 A CN 1746639A CN 200510021654 CN200510021654 CN 200510021654 CN 200510021654 A CN200510021654 A CN 200510021654A CN 1746639 A CN1746639 A CN 1746639A
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- porcelain
- infrared detector
- bst
- electrode
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Abstract
A unit pyroelectric infrared detector consists of top and bottom electrodes, BST ceramic semiconductor and BST ceramic oxide layer media wrapped outside of said semiconductor. It features that BST ceramic semiconductor is prepared by high temperature sintering and reduction heat treating ( Ba 0.7 Sr 0.3 ) TiO3 ceramic base material doped with 1-5 wt% rare earth impurities with its thickness less than 0.20mm and resistance rate less than 10 omega cm, BST ceramic oxide layer media is prepared by oxidizing surface of ceramic semiconductor with its thickness of 5-10 mm. The preparing method is also provided.
Description
Technical field
The invention belongs to material and components and parts technical field, it is particularly related to the structure and the preparation of pyroelectric infrared detector spare.
Background technology
Characteristics such as everyone knows, pyroelectric infrared detector is owing to have working and room temperature, and response spectrum is wide, and is easy to use, and cost is low can be widely used in fields such as industry, agricultural, environment, military affairs, medical treatment.With the BST ferroelectric material is that the pyroelectric infrared detector that is operated under the dielectric pattern of representative enjoys people to pay attention to owing to having the high detection figure of merit.
Because the sensing unit dielectric thickness that pyroelectric infrared detector is used is very thin, usually below 0.1mm, release ceramic block even adopt state-of-the-art ceramic process to make BST heat, the sensing unit waste of material that is processed into last form after the technology through a series of complexity such as cutting, grindings is serious, under comparatively ideal situation, the utilization factor of material also only is 5%, and sensing unit dielectric thickness attenuate is subjected to process technology limit simultaneously.Utilize BST heat release the ceramic block dielectric material pyroelectric unit infrared detector structure as shown in Figure 1.
In order to obtain the utilization factor problem of thin as far as possible high-performance sensing unit medium and raising material, the casting technique that in the sensing unit material preparation, has the people to introduce, but because the intrinsic defective of casting technique, the one, the density that the organic ink that accounts for 30wt% that will add at least in the casting film-forming can reach limiting diaphragm, thereby influence the dielectric properties and the physical strength of sensing unit; The 2nd, when making multilayer ceramic capacitor, casting films as thin as a wafer (thickness is less than 0.03mm) generally all needs sintering behind the lamination, and the sensitive membrane of preparation infrared eye is a monofilm, can not carry out the lamination sintering, thereby can cause the distortion of diaphragm and warp according to common sintering method, be difficult to satisfy actual request for utilization.
Summary of the invention
The purpose of this invention is to provide a kind of pyroelectric unit infrared detector and preparation method thereof, compare with existing unit BST pyroelectric infrared detector spare, it is under the prerequisite of the physical strength of taking into account pyroelectric ceramic material and technology processibility, utilize unique microstructure to realize the attenuate of sensing unit dielectric thickness, adding (less than 10v) under the very low bias voltage, also can guarantee the sensing unit detection performance, thereby solve sensing unit performance and sensing unit physical strength and the conflicting problem of technology processibility, to satisfy actual request for utilization.Its preparation method is simple and easy to control.
Pyroelectric unit infrared detector comprises top electrode 1, bottom electrode 3, it is characterized in that, it also comprises the BST ceramic semiconductors 5 between upper/lower electrode and is wrapped in the BST ceramic oxide layer medium 6 of BST ceramic semiconductors 5 outsides; Thickness＜the 0.20mm of described BST ceramic semiconductors 5, resistivity is less than 10 Ω cm; The THICKNESS CONTROL of described BST ceramic oxide layer medium 6 is at 5～10um.
Described BST ceramic semiconductors 5 is by (the Ba that is mixed with 1～5wt% rare earth impurities
0.7Sr
0.3) TiO
3The base porcelain makes through high temperature sintering and heat of reduction processing.Wherein, described rare earth impurities can be by Nd
2O
3, CeO
2, Pr
6O
11, La
2O
3Deng in one or more compositions.Described BST ceramic oxide layer medium 6 is made through surface oxidation by BST ceramic semiconductors 5.
Described top electrode 1 and bottom electrode 3 are metal electrode.Described metal electrode material can be the metal that is fit to make electrode, as platinum (Pt), gold (Au), silver (Ag) or palladium (Pa) etc.
The preparation method of pyroelectric unit infrared detector is characterized in that, comprises following sequential steps at least:
The first step: the porcelain preparation, preparation is mixed with the (Ba of 1～5wt% rare earth impurities
0.7Sr
0.3) TiO
3Porcelain, described rare earth impurities can be by Nd
2O
3, CeO
2, Pr
6O
11, La
2O
3Deng in one or more compositions, form design by material, make this porcelain high temperature sintering in air have the insulativity of height, its resistivity is greater than 10
11Ω cm; Described porcelain crystal grain should be tiny, evenly;
Second step: the porcelain embryo is made, and adopts and squeezes film or roll membrane process, and the porcelain of first step gained is extruded or roll out the porcelain diaphragm of thickness＜0.20mm, and makes the ceramics of different size, binder removal under 600～800 ℃ of temperature environments then according to specific requirement;
The 3rd step: high temperature sintering, the porcelain embryo with the second step gained is incubated 2～3 hours under 1300～1380 ℃ air ambient, and to obtain the good porcelain body of intrinsic dielectric properties, its resistivity is greater than 10
11Ω cm;
The 4th step: reducing atmosphere thermal treatment, handle carrying out heat of reduction at reducing atmosphere with under 950～1100 ℃ of temperature environments after the ceramics surface grinding of the 3rd step gained, make the medium of high-insulation become semiconductor, make its resistivity less than 10 Ω cm;
The 5th step: surface oxidation, ceramic semiconductors with the 4th step gained, in 950～1050 ℃ air, carry out 0.5～3 hour thermal treatment, allow the oxygen of air in body, spread by the surface, make the dielectric surface uniform insulation form the oxide layer medium, the THICKNESS CONTROL that makes the porcelain body surrounding medium is at 5～10um;
The 6th step: electrode is made, and produces top electrode 1 and bottom electrode 3 in the BST stupalith upper and lower surface of good semiconducting in the surface elevation insulation of above-mentioned steps gained, body.
The N that reducing atmosphere in described the 4th step can adopt ammonia to decompose
2: H
2=1: 3 reducing atmosphere.
Electrode in described the 6th step is made and can be adopted sputter or evaporation process.
Six step of the first step to the, described step can be utilized the equipment and the technology of existing manufacturing ceramic capacitor.
Pyroelectric infrared detector spare of the present invention has unique microstructure: the porcelain body surface is that insulating, inside are semiconductings.Because porcelain body surface dielectric thickness has only 5～10um, adding under certain bias field effect, actual effective electric-field intensity on the medium is very big, the pyroelectric coefficient of favourable like this raising pyroelectric infrared detector spare, thus improve pyroelectric infrared detector sensitivity.By the suitable selection of porcelain body semiconduction layer and surface insulation layer thickness, not only can guarantee the intensity of detector but also can guarantee the performance of detector, to satisfy actual request for utilization.
Description of drawings
Fig. 1 utilizes BST heat to release the schematic cross-section of the pyroelectric unit infrared detector structure of ceramic block dielectric material,
Wherein, the 1st, top electrode, the 2nd, BST heat is released ceramic block, and the 3rd, bottom electrode.
Fig. 2 is the schematic cross-section of pyroelectric unit infrared detector structure of the present invention,
Wherein, the 1st, top electrode, the 5th, through the BST ceramic semiconductors material of high temperature sintering, reduction processing, the 6th, BST ceramic oxide layer medium, the 3rd, bottom electrode.
Fig. 3 is preparation method's process flow diagram of pyroelectric unit infrared eye of the present invention.
Fig. 4 is pyroelectric infrared detector voltage response curves figure of the present invention,
Wherein, curve 2 is a material design temperature change curve, and curve 3 is a material actual temperature change curve, and curve 1 is a material virtual voltage change curve.
Embodiment
Adding 0.5wt%Nd
2O
3, 1.0wt%CeO
2And 0.1wt%MnO
2(Ba
0.7Sr
0.3) TiO
3The pottery porcelain, obtain diameter phi=3.8mm through extrusion process, thickness d=0.20mm ceramics, this ceramics through sintering in 1360 ℃ of air after, after 1～2 hour, can obtain the semiconducting ceramics of resistivity 1000 ℃～1100 ℃ reducing atmosphere thermal treatment again less than 2 Ω cm, the semiconducting ceramics again in air through 900 ℃～1000 ℃ suitable oxidizing, under the 10v bias effect, can obtain pyroelectric coefficient greater than 2 * 10
-7C/cm
2K pyroelectric infrared detector material, this material exemplary dynamic pyroelectricity voltage response curves as shown in Figure 4.
Claims (9)
1, pyroelectric unit infrared detector comprises top electrode (1), bottom electrode (3), it is characterized in that, it also comprises the BST ceramic semiconductors (5) between upper/lower electrode and is wrapped in the BST ceramic oxide layer medium (6) of BST ceramic semiconductors (5) outside; Thickness＜the 0.20mm of described BST ceramic semiconductors (5), resistivity is less than 10 Ω cm; The THICKNESS CONTROL of described BST ceramic oxide layer medium (6) is at 5～10um.
2, pyroelectric unit infrared detector according to claim 1 is characterized in that, described BST ceramic semiconductors (5) is by (the Ba that is mixed with 1～5wt% rare earth impurities
0.7Sr
0.3) TiO
3The base porcelain makes through high temperature sintering and heat of reduction processing; Described BST ceramic oxide layer medium (6) is made through surface oxidation by BST ceramic semiconductors (5).
3, pyroelectric unit infrared detector according to claim 2 is characterized in that, described rare earth impurities can be by Nd
2O
3, CeO
2, Pr
6O
11, La
2O
3Deng in one or more compositions.
4, pyroelectric unit infrared detector according to claim 1 is characterized in that, described top electrode (1) and bottom electrode (3) are metal electrode.
5, pyroelectric unit infrared detector according to claim 4 is characterized in that, described metal electrode material can be the metal that is fit to make electrode, as Pt, Au, Ag or Pa etc.
6, the preparation method of pyroelectric unit infrared detector is characterized in that, comprises following sequential steps at least:
The first step: the porcelain preparation, preparation is mixed with the (Ba of 1～5wt% rare earth impurities
0.7Sr
0.3) TiO
3Porcelain, described rare earth impurities can be by Nd
2O
3, CeO
2, Pr
6O
11, La
2O
3Deng in one or more compositions, form design by material, make this porcelain high temperature sintering in air have the insulativity of height, its resistivity is greater than 10
11Ω cm; Described porcelain crystal grain should be tiny, evenly;
Second step: the porcelain embryo is made, and adopts and squeezes film or roll membrane process, and the porcelain of first step gained is extruded or roll out the porcelain diaphragm of thickness＜0.20mm, and makes the ceramics of different size, binder removal under 600-800 ℃ of temperature environment then according to specific requirement;
The 3rd step: high temperature sintering, with the porcelain embryo of the second step gained, insulation is 2-3 hour under 1300-1380 ℃ air ambient, and to obtain the good porcelain body of intrinsic dielectric properties, its resistivity is greater than 10
11Ω cm;
The 4th step: reducing atmosphere thermal treatment, handle carrying out heat of reduction at reducing atmosphere with under 950-1100 ℃ of temperature environment after the ceramics surface grinding of the 3rd step gained, make the medium of high-insulation become semiconductor, make its resistivity less than 10 Ω cm;
The 5th step: surface oxidation, ceramic semiconductors with the 4th step gained carries out 0.5-3 hour thermal treatment in 950-1050 ℃ air, allow the oxygen of air be spread in body by the surface, make the dielectric surface uniform insulation form the oxide layer medium, the THICKNESS CONTROL that makes the porcelain body surrounding medium is at 5～10um;
The 6th step: electrode is made, and produces top electrode 1 and bottom electrode 3 in the BST stupalith upper and lower surface of good semiconducting in the surface elevation insulation of above-mentioned steps gained, body.
7, pyroelectric unit infrared detector according to claim 6 is characterized in that, the N that the reducing atmosphere in described the 4th step can adopt ammonia to decompose
2: H
2=1: 3 reducing atmosphere.
8, pyroelectric unit infrared detector according to claim 6 is characterized in that, the electrode in described the 6th step is made and can be adopted sputter or evaporation process.
9, pyroelectric unit infrared detector according to claim 6 is characterized in that, six step of the first step to the, described step can be utilized the equipment and the technology of existing manufacturing ceramic capacitor.
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|---|---|---|---|
| CNB2005100216543A CN100414276C (en) | 2005-09-12 | 2005-09-12 | Pyroelectric unit infrared detector and production thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100216543A CN100414276C (en) | 2005-09-12 | 2005-09-12 | Pyroelectric unit infrared detector and production thereof |
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|---|---|
| CN1746639A true CN1746639A (en) | 2006-03-15 |
| CN100414276C CN100414276C (en) | 2008-08-27 |
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ID=36166270
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104098330A (en) * | 2014-07-22 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Method for preparing high-performance BST (barium strontium titanate) pyroelectric ceramics by adopting post-annealing process |
| CN105154829A (en) * | 2015-07-28 | 2015-12-16 | 昆明物理研究所 | Low-stress isotropic organic matter filling device and method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2656689A1 (en) * | 1989-12-29 | 1991-07-05 | Philips Electronique Lab | PYROELECTRIC SENSOR ELEMENT AND DEVICES FOR DETECTION OF THERMAL PHENOMENA. |
| JP2001267643A (en) * | 2000-03-21 | 2001-09-28 | Matsushita Electric Works Ltd | Pyroelectric infrared detector element and its manufacturing method |
-
2005
- 2005-09-12 CN CNB2005100216543A patent/CN100414276C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104098330A (en) * | 2014-07-22 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Method for preparing high-performance BST (barium strontium titanate) pyroelectric ceramics by adopting post-annealing process |
| CN105154829A (en) * | 2015-07-28 | 2015-12-16 | 昆明物理研究所 | Low-stress isotropic organic matter filling device and method |
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| Publication number | Publication date |
|---|---|
| CN100414276C (en) | 2008-08-27 |
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Granted publication date: 20080827 Termination date: 20110912 |