CN1745466A - Method of manufacturing semiconductor device and display device - Google Patents
Method of manufacturing semiconductor device and display device Download PDFInfo
- Publication number
- CN1745466A CN1745466A CN 200480003254 CN200480003254A CN1745466A CN 1745466 A CN1745466 A CN 1745466A CN 200480003254 CN200480003254 CN 200480003254 CN 200480003254 A CN200480003254 A CN 200480003254A CN 1745466 A CN1745466 A CN 1745466A
- Authority
- CN
- China
- Prior art keywords
- wiring
- solution injection
- injection unit
- semiconductor device
- atmospheric pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
A method for manufacturing a semiconductor device comprises a step wherein wiring is formed by using a first solution jet means which sprays a conductive material, a step wherein a resist mask is formed on the wiring by using a second solution jet means, and a step wherein the wiring is etched by using an atmospheric pressure plasma apparatus having a linear plasma generating means or an atmospheric pressure plasma apparatus having a plurality of plasma generating means arranged linearly while using the resist mask as a mask.
Description
Technical field
The present invention relates to the manufacture method of semiconductor device, particularly use with the manufacture method of thin-film transistor (TFT) as the display unit of the display unit of the insulated-gate type field effect transistor of representative.
Background technology
In the thin-film transistor (TFT) that adopts film to form on insulating surface extensive use in integrated circuit etc.Wherein in the display floater of thin film display device that with liquid crystal TV set etc. is representative, be used as switch element, its purposes is just expanding portable terminal and large-scale display device etc. to more.
The display unit of use TFT in the past is to form film on the whole surface of substrate, utilizes photoetching process, etching technics and grinding technics etc. to form the figure of TFT etc. again.The over half many of such manufacturing process carry out in vacuum plant.
In the manufacturing process of TFT, the resist mask that use forms by photoetching, employing is carried out the method for removing after the etching with the major part of the film (resist, metal, semiconductor film, organic membrane etc.) that forms on the whole surface of substrate, and above-mentioned film is processed.Therefore, in the film that forms previously, wait the ratio that remains on the substrate only to be a few percent～tens percent as wiring.Have, resist film etc. are when utilizing spin coating to form again, and about 95% slatterns.
The major part that the manufacture method of TFT like this, in the past etc. will be thrown away material.Therefore, not only the manufacturing cost for the display unit of using the semiconductor device of making like this etc. exerts an influence, and causes increasing environmental pressure.
In addition, the large-screenization of display screen causes mother glass to increase area, and respective vacuum chamber chamber, vacuum pump equal vacuum device also maximize therewith, and the scale of manufacturing installation is very big.In addition, the price of device is also very high, must more massive equipment investment.
Substrate size in the production line flow maximizes, and above-mentioned tendency is obvious.
Therefore, problem of the present invention is propose to reduce that film forms the used fee of material of material and etching and grinding, the manufacture method of the display unit of time of reducing vacuum treatment and spent in addition.
In order to solve above-mentioned problem, adopt following method among the present invention.
Summary of the invention
The manufacture method of display unit of the present invention is characterized in that using the solution injection unit, object being treated is sprayed the solution that contains conductive material form wiring.
Here so-called wiring comprises the wiring of grid wiring, source wiring, connection TFT and pixel electrode etc.
Have again, also can in above-mentioned wiring, form resist film, form the resist mask, use this resist mask, finer shape is processed in described wiring.
In addition, as the one-tenth film unit of described resist film, can use the solution injection unit that adopts the solution that comprises anticorrosive additive material.
Unit as above-mentioned wiring being carried out etching can use the atmospheric pressure plasma device.
Have, the unit as above-mentioned resist mask is ground also can use the atmospheric pressure plasma device again.
Feature of the present invention is, have operation that the 1st solution injection unit that use to spray conductive material forms wiring, use the 2nd solution injection unit in above-mentioned wiring, to form the operation of resist mask and with above-mentioned resist mask as mask, the atmospheric pressure plasma device that use has a wire plasma generating unit carries out above-mentioned wiring the operation of etching.
In addition, feature of the present invention is, have the solution injection unit that use to spray conductive material form the operation of wiring, at least in above-mentioned wiring, form the operation of resist mask and with above-mentioned resist mask as mask, use atmospheric pressure plasma device above-mentioned wiring to be carried out the operation of etching with wire plasma producing apparatus.
Have again, feature of the present invention is, operation, use solution injection unit with the wiring of forming form the operation of resist mask at least and make mask with above-mentioned resist mask in above-mentioned wiring, use the atmospheric pressure plasma device with wire plasma generating unit above-mentioned wiring to be carried out the operation of etching.
Above-mentioned formation of the present invention can be used in the manufacture method of semiconductor device and display unit.
Above-mentioned atmospheric pressure plasma device comprises the plasma generating unit that has along the plasma jet mouth of a direction, can form the wire plasma.
Here, near the pressure so-called atmospheric pressure or the atmospheric pressure is meant the pressure in about 600～106000pa scope.
By the semiconductor device of making like that more than using, can make cheap display unit with low cost.
As other formation of the present invention, it is characterized in that, have operation that the 1st solution injection unit that use to spray conductive material forms wiring, use the 2nd solution injection unit in above-mentioned wiring, to form the operation of resist mask and with above-mentioned resist mask as mask, use the atmospheric pressure plasma device that a plurality of plasma generating units are the wire arrangement above-mentioned wiring to be carried out the operation of etching.
In addition, feature of the present invention is, have the solution injection unit that use to spray conductive material form the operation of wiring, at least in above-mentioned wiring, form the operation of resist mask and with above-mentioned resist mask as mask, use a plurality of plasma generating units are the operation that atmospheric pressure plasma device that wire arranges carries out above-mentioned wiring etching.
Have again, feature of the present invention is, have the wiring of forming operation, use the solution injection unit in above-mentioned wiring, to form the operation of resist mask at least and with above-mentioned resist mask as mask, use a plurality of plasma generating units are the operation that atmospheric pressure plasma device that wire arranges carries out above-mentioned wiring etching.
Above-mentioned formation of the present invention can be used in the manufacture method of semiconductor device and display unit.
Above-mentioned atmospheric pressure plasma device has a plurality of plasma generating units that are the wire arrangement, in above-mentioned a plurality of plasma generating units, uses selecteed specific plasma generating unit, can handle any part on the processed object.
Here, near the pressure so-called atmospheric pressure or the atmospheric pressure is meant the pressure in about 600～106000pa scope.
By the semiconductor device of making like that more than using, can make cheap display unit with low cost.
By using the solution injection unit to form film selectively, reducing the use amount of the film (resist, metal, semiconductor film, organic membrane etc.) that its major part in the past is wasted, thereby can reduce manufacturing cost.
Have, have mobile material by utilization and form wiring etc., it is good for the spreadability of contact hole and ladder to make, can reduce the generation of bad phenomenon such as loose contact and broken string.
In addition, carry out etching or grinding, can also reduce the use amount of gas, can reduce manufacturing cost by using wire plasma generating unit part.
Have again, arrange, carry out etching or grinding selectively, can also reduce the use amount of gas, can reduce manufacturing cost by a plurality of plasma generating units being wire.
In addition, by with etching or grind near atmospheric pressure or atmospheric pressure the pressure and handle, can simplify the vacuum chamber of constituent apparatus and pump etc., can prevent that locking apparatus maximizes.And, reduce the maintenance cost of device, and owing to can therefore can shorten the processing substrate time with will reach the processing of carrying out after the vacuum state and under near the pressure atmospheric pressure or the atmospheric pressure, need not vacuumize and handle vacuumizing in the chamber in the technology in the past.In addition, can invest (device price) by suppression equipment, can realize the low cost of equipment investment volume.
Description of drawings
Fig. 1 is the stereogram of explanation manufacture method of the present invention.
Fig. 2 is the stereogram of explanation manufacture method of the present invention.
Figure 3 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 4 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 5 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 6 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 7 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 8 shows that an example of the solution injection apparatus that uses among enforcement the present invention.
Figure 9 shows that an example of the solution injection apparatus that uses among enforcement the present invention.
Figure 10 shows that an example of the solution injection apparatus that uses among enforcement the present invention.
Figure 11 shows that an example of the atmospheric pressure plasma device that uses among enforcement the present invention.
Figure 12 shows that an example of the atmospheric pressure plasma device that uses among enforcement the present invention.
Figure 13 shows that the schematic diagram of wiring manufacture method of the present invention.
Figure 14 shows that an example of electronic equipment.
Figure 15 shows that an example of the atmospheric pressure plasma device that uses among enforcement the present invention.
Figure 16 shows that the schematic diagram of wiring manufacture method of the present invention.
Figure 17 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 18 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 19 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Figure 20 shows that the schematic diagram of method for fabricating thin film transistor of the present invention.
Shown in Figure 21 is the schematic diagram of method for fabricating thin film transistor of the present invention.
Shown in Figure 22 is the schematic diagram of method for fabricating thin film transistor of the present invention.
Shown in Figure 23 is the schematic diagram of method for fabricating thin film transistor of the present invention.
Shown in Figure 24 is the schematic diagram of method for fabricating thin film transistor of the present invention.
Embodiment
Describe example of the present invention in detail with accompanying drawing below.But the present invention is not limited to the following description, and under the situation that does not break away from aim of the present invention and scope thereof, its form and details can be carried out various variations, and this point is that the insider understands easily.Thereby the present invention is not limited to the explanation that the described content of example shown below is carried out.
(example 1)
With Fig. 1, Fig. 2 (A), Fig. 3 to Fig. 7 example of the present invention is described below.
Figure 1 shows that use solution injection unit of the present invention forms the method for wiring.Solution injection unit 103 moves above substrate 101, and sprayed solution on substrate 101 forms wiring figure 102.
Fig. 2 (A) expression uses the plasma generating unit to carry out the method for etching.In Fig. 2 (A), plasma generating unit 202 moves above substrate 101, and the part that does not cover resist 201 in the wiring figure 102 is carried out etching.
The following describes the above-mentioned method of in this example employing and make the method for semiconductor device.
Get various materials such as glass, quartz, semiconductor, plastics, metal, glass epoxy resin, pottery as substrate 301.Then, utilize solution injection unit 306 on substrate 301, to spray well-known constituent, by such formation gate electrode and connect up 302 and the capacitance electrode and 303 (Fig. 3 (A)) that connect up with conductivity.
Then, to formed gate electrode and connect up 302 and capacitance electrode and 303 the substrate of connecting up carry out heat treated etc., by making its flux volatilization like this, improve the viscosity of this constituent.In addition, this heat treated can be carried out when utilizing the solution spray regime to form film at every turn, also can carry out in each any operation, and also all operation is carried out after finishing together.
Then, utilize solution injection unit 306 to spray resists 304 and 305, make it cover and connect up 302 and the capacitance electrode and 303 (Fig. 3 (B)) that connect up with the gate electrode of above-mentioned operation injection.
Then, resist is formed figure (Fig. 3 (c)).
Then, use has the atmos plasma device of wire plasma generating unit 307 and support 300, form wire plasma 308, carry out gate electrode and connect up 302 and the etching of capacitance electrode and wiring line 303, utilize then to grind and remove resist (Fig. 4 (A, B)).
Utilize above such operation to form gate electrode and connect up 302 and capacitance electrode wiring 303.In addition, as forming gate electrode and connecting up 302 and capacitance electrode and 303 the material of connecting up, can enumerate the such conductive materials such as Al that comprise Mo, Ti, Ta, W, Cr, Al, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
Then, utilize well-known methods such as CVD method, form gate insulating film 401 (Fig. 4 (C)).In this example, be under atmospheric pressure to utilize the CVD method to form silicon nitride film as gate insulating film 401, but also can adopt silicon oxide film or their stepped construction.
Then, utilize well-known method (sputtering method, LP CVD method, plasma CVD etc.), form 25～80nm (preferably the semiconductor film 501 of 30～60nm) thickness, be to adopt amorphous semiconductor film, amorphous state SiGe film etc. to have the compound semiconductor film etc. of amorphous structure as this semiconductor film 501, the whole surface on substrate 301 forms (Fig. 5 (A)).
Then, form silicon nitride film etc. on whole surface, and form figure, form channel protection film 502 (Fig. 5 (B)) like this.
Then, form the semiconductor film 503 (Fig. 5 (C)) that has added the impurity element of giving the N type.
Then, use solution injection unit 306, form source electrode and drain electrode and 601 and 602 (Fig. 6 (A)) that connect up.In addition, source electrode and drain electrode wiring 601 and 602 as long as with Fig. 3 (A) to the gate electrode shown in Fig. 4 (B) and connect up 302 and the capacitance electrode and the 303 identical formation figures that connect up.As forming source electrode and drain electrode and 601 and 602 the material of connecting up, can enumerate the such conductive materials such as Al that comprise Mo, Ti, Ta, W, Cr, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
Then, for with source electrode and drain electrode and connect up 601 and 602 as mask, added the semiconductor film 503 and the semiconductor film 501 of the impurity element of giving the N type, use has the atmospheric pressure plasma device of wire plasma generating unit 307 and support 300, form wire plasma 308, carry out etching.
Then, utilize well-known methods such as CVD method, form diaphragm 603 (Fig. 6 (C)).In this example, be under atmospheric pressure to utilize the CVD method to form silicon nitride film as diaphragm 603, but also can adopt silicon oxide film or their stepped construction.In addition, also can adopt organic resin films such as propylene film.
Then, utilize solution injection unit 306 to spray after the resist, resist is formed figure.Then, use atmospheric pressure plasma device, form shape plasma 308, carry out the etching of diaphragm 603, form contact hole 701 (Fig. 7 (A)) with wire plasma generating unit 307 and support 300.
Then, utilize the solution spray regime, form pixel electrode 702.
In addition, pixel electrode 702 can use solution injection unit 306 directly to form, also can with Fig. 3 (A) to the gate electrode shown in Fig. 4 (B) and connect up 302 and capacitance electrode and the 303 identical figures that carry out that connect up form.As the material that forms pixel electrode 702, ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In can have been enumerated
2O
3-ZnO), zinc oxide nesa coatings such as (ZnO) or comprise such conductive materials such as Al of Mo, Ti, Ta, W, Cr, Al, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
The semiconductor device that utilizes this example to make is the so-called raceway groove protection type that utilizes the protection diaphragm that the channel formation region territory is protected.
In this example, shown is to adopt the solution spray regime to form the figure of wiring and resist etc., utilize atmospheric pressure plasma again with wire plasma generating unit, carry out etching and grinding, and with it as an example, but also can be implemented with the combination of the manufacture method of well-known various TFT.
By using the solution injection unit to form the figure of wiring and resist etc. selectively, with the use amount of employed material in semiconductor device is made that reduces that its major part in the past slatterns, thereby can reduce the manufacturing cost of the display unit that adopts above-mentioned semiconductor device.
Have again, have mobile material by utilization and form wiring etc., make, can reduce the generation of bad phenomenon such as loose contact and broken string for the covering performance of contact hole and ladder.
In addition, carry out etching or grinding, can also reduce the use amount of gas, can reduce manufacturing cost by using wire plasma generating unit part.
(example 2)
About this example, with Fig. 1, Fig. 2, Figure 17 to Figure 21 example of the present invention is described below.
Figure 1 shows that use solution injection unit of the present invention forms the method for wiring.Solution injection unit 103 moves above substrate 101, and sprayed solution on substrate 101 forms wiring figure 102.
In this example, illustrate to use to be the method that the cylindrical shape plasma generating unit that wire arranges carries out etching or grinding, makes semiconductor device.
Fig. 2 represents to use the plasma generating unit that uses in this example to carry out the method for etching.In Fig. 2, plasma generating unit 202 moves above substrate 101, and the part that does not cover resist 201 in the wiring figure 102 is carried out etching.
The vertical view of Fig. 2 (A) is figure (B), and a plurality of cylindrical shape plasma generating units 203 utilize the support sector 202 of plasma generating unit to be wire and arrange.Arrange by the plasma generating unit being wire, can carry out etching or grinding selectively, can also reduce the use amount of gas, can reduce manufacturing cost.
Get various materials such as glass, quartz, semiconductor, plastics, metal, glass epoxy resin, pottery as substrate 2301.Then, utilize solution to spray in 2306 and on substrate 2301, spray well-known constituent, by such formation gate electrode and connect up 2302 and the capacitance electrode and 2303 (Figure 17 (A)) that connect up with conductivity.
Then, to formed gate electrode and connect up 2302 and capacitance electrode and 2303 the substrate of connecting up carry out heat treated etc., by making its flux volatilization like this, improve the viscosity of this constituent.In addition, this heat treated can be carried out when utilizing the solution spray regime to form film at every turn, also can carry out in each any operation, and also all operation is carried out after finishing together.
Then, utilize solution injection unit 2306 to spray resists 2304 and 2305, make it cover and connect up 2302 and the capacitance electrode and 2303 (Figure 17 (B)) that connect up with the gate electrode of above-mentioned operation injection.
Then, resist is formed figure (Figure 17 (C)).
Then, use has and is a plurality of cylindrical shape plasma units 2307 that wire arranges and the atmos plasma device of support 2300, form plasma 2308 selectively, carry out gate electrode and connect up 2302 and the etching of capacitance electrode and wiring line 2303, utilize to grind then and remove resist (Figure 18 (A, B)).
Utilize above such operation to form gate electrode and connect up 2302 and capacitance electrode wiring 2303.In addition, as forming gate electrode and connecting up 2302 and capacitance electrode and 2303 the material of connecting up, can enumerate the such conductive materials such as Al that comprise Mo, Ti, Ta, W, Cr, Al, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
Then, utilize well-known methods such as CVD method, form gate insulating film 2401 (Figure 18 (C)).In this example, be under atmospheric pressure to utilize the CVD method to form silicon nitride film as gate insulating film 2401, but also can adopt silicon oxide film or their stepped construction.
Then, utilize well-known method (sputtering method, LP CVD method, plasma CVD etc.), form 25～80nm (preferably the semiconductor film 2501 of 30～60nm) thickness, be to adopt amorphous semiconductor film, amorphous state SiGe film etc. to have the compound semiconductor film etc. of amorphous structure as this semiconductor film 2501, the whole surface on substrate 2301 forms (Figure 19 (A)).
Then, form silicon nitride film etc. on whole surface, and form figure, form channel protection film 2502 (Figure 19 (B)) like this.
Then, form the semiconductor film 2503 (Figure 19 (C)) that has added the impurity element of giving the N type.
Then, use solution injection unit 2306, form source electrode and drain electrode and 2601 and 2602 (Figure 20 (A)) that connect up.In addition, source electrode and drain electrode wiring 2601 and 2602 as long as with Figure 17 (A) to the gate electrode shown in Figure 18 (B) and connect up 2302 and the capacitance electrode and the 2303 identical formation figures that connect up.
As forming source electrode and drain electrode and 2601 and 2602 the material of connecting up, can enumerate the such conductive materials such as Al that comprise Mo, Ti, Ta, W, Cr, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
Then, for with source electrode and drain electrode and connect up 2601 and 2602 as mask, added the semiconductor film 2503 and the semiconductor film 2501 of the impurity element of giving the N type, use has and is a plurality of cylindrical shape plasma generating units 2307 that wire arranges and the atmospheric pressure plasma device of support 2300, form plasma 2308 selectively, carry out etching.
Then, utilize well-known methods such as CVD method, form diaphragm 2603 (Figure 20 (C)).In this example, be under atmospheric pressure to utilize the CVD method to form silicon nitride film as diaphragm 2603, but also can adopt silicon oxide film or their stepped construction.In addition, also can adopt organic resin films such as propylene film.
Then, utilize solution injection unit 2306 to spray after the resist, resist is formed figure.Then, use to have to be a plurality of cylindrical shape plasma generating units 2307 that wire arranges and the atmospheric pressure plasma device of support 2300, form plasma 2308, carry out the etching of diaphragm 2603, form contact hole 2701 (Figure 21 (A)).
Then, utilize the solution spray regime, form pixel electrode 2702.
In addition, pixel electrode 2702 can use solution injection unit 2306 directly to form, also can with Figure 17 (A) to the gate electrode shown in Figure 18 (B) and connect up 2302 and capacitance electrode and the 2303 identical figures that carry out that connect up form.As the material that forms pixel electrode 2702, ITO (indium oxide tin oxide alloy), indium oxide zinc oxide alloy (In can have been enumerated
2O
3-ZnO), zinc oxide nesa coatings such as (ZnO) or comprise such conductive materials such as Al of Mo, Ti, Ta, W, Cr, Al, Cu, Nd etc., in addition also can be with the stacked use of multiple conductive material.
The semiconductor device that utilizes this example to make is the so-called raceway groove protection type that utilizes the protection diaphragm that the channel formation region territory is protected.
In this example, shown is to adopt the solution spray regime to form the figure of wiring and resist etc., utilize the atmospheric pressure plasma of plasma generating unit again with wire arrangement, carry out etching and grinding, and with it as an example, but also can be implemented with the combination of the manufacture method of well-known various TFT.
By using the solution injection unit to form the figure of wiring and resist etc. selectively, with the use amount of employed material in semiconductor device is made that reduces that its major part in the past slatterns, thereby can reduce the manufacturing cost of the display unit that adopts above-mentioned semiconductor device.
Have again, have mobile material by utilization and form wiring etc., make, can reduce the generation of bad phenomenon such as loose contact and broken string for the covering performance of contact hole and ladder.
In addition, the plasma generating unit that is the wire arrangement by use carries out etching or grinding selectively, can also reduce the use amount of gas, can reduce manufacturing cost.
(example 3)
In this example, the manufacture method of the device of the so-called channel-etch type that the not protected film in channel formation region territory covers is described with Figure 22 to Figure 24.
Identical with example 1 or example 2, on substrate, form gate electrode and connect up 3302 and capacitance electrode and connect up 3303, the semiconductor film 3503 that forms gate insulating film 3401, semiconductor film 3501 and added the impurity element of giving the N type.
Then, use solution injection unit 3306, spray the solution 3504 (Figure 22 (A)) that contains resist.
Then, use has the atmospheric pressure plasma device of wire plasma generating unit 3307 and support 3300, form wire plasma 3308, semiconductor film 3503 and the semiconductor film 3501 that has added the impurity element of giving the N type carried out etching (Figure 22 (B)).
Then, utilize grinding to remove resist (Figure 22 (C)).
Then, use solution injection unit 3306, form source electrode and drain electrode and connect up 3601 and 3602, make its covering add the semiconductor film 3503 and the semiconductor film 3501 (Figure 23 (A)) of the impurity element of giving the N type.In addition, source electrode and drain electrode and connect up 3601 and 3602 as long as with Fig. 3 (A) to the gate electrode shown in Fig. 4 (B) and connect up 3302 and the capacitance electrode and the 3303 identical figure of the carrying out formation of connecting up.As forming source electrode and drain electrode and 3601 and 3602 the material of distributing, can enumerate such conductive materials such as comprising Mo, Ti, Ta, W, Cr, Al, Cu, Nd, in addition also can be with the stacked use of multiple conductive material.
Then, utilize well-known methods such as CVD method, form diaphragm 3603 (Figure 23 (C)).In this example, be under atmospheric pressure to utilize the CVD method to form silicon nitride film as diaphragm 3603, but also can adopt silicon oxide film or their stepped construction.In addition, also can adopt organic resin films such as propylene film.
Then, utilize solution injection unit 3306 to spray after the resist, resist is formed figure.Then, use atmospheric pressure plasma device, form wire plasma 3308, carry out the etching of diaphragm 3603, form contact hole 3701 (Figure 24 (A)) with wire plasma generating unit 3307 and support 3300.
Then, identical with example 1 with example 2, form pixel electrode 3702.
The semiconductor device that utilizes this example to make is a so-called channel-etch type of not utilizing diaphragm that the channel formation region territory is protected.
In this example, be to use wire plasma generating unit, but also can use a plurality of cylindrical shape plasma generating units that wire is arranged that are shown in the example 2.
(example 4)
In the invention process form, when forming wiring and wait, adopt to have mobile material, the spreadability for contact hole or ladder is good like this, can reduce situations such as cut-out such as wiring figure or loose contact.
The particle diameter of used here wiring material must be less than contact hole, the reasonable particle that is to use a kind of several microns～sub-micron or nanometer size, and preferably the particle with multiple size is used in combination.
(example 5)
In the invention process form, when use has the substrate manufacturing semiconductor device of light transmission, be to adopt 600mm * 720mm, 680mm * 880mm, 1000mm * 1200mm, 1100mm * 1250mm, 1150mm * 1300mm, 1500mm * 1800mm, 1800mm * 2000mm, 2000 * 2100mm, 2200mm * 2600mm or the such large-area substrates of 2600mm * 3100mm as substrate size.
By adopting such large substrate, can reduce manufacturing cost.As the substrate that can use, can adopt with the #7059 glass of Corning Incorporated or #1737 glass etc. is glass substrates such as the barium Pyrex of representative or aluminium Pyrex.Have again,, also can adopt various light-transmitting substrates such as quartz, semiconductor, plastics, metal, glass epoxy resin, pottery as substrate.
(example 6)
To example 2, shown is the manufacture method of raceway groove protection type amorphous silicon TFT at example 1, adopts certainly to use the same method, and also can make channel-etch type amorphous silicon TFT.
In addition, example 1 to the manufacture method of wiring shown in the example 3 etc. also can be used for low temperature polycrystalline silicon TFT etc.
(example 7)
The semiconductor device of example manufacturing of the present invention can be used for liquid crystal indicator and is active illuminating type display unit of representative etc. with EL display etc.
(example 8)
With Fig. 8 to Figure 10 the one or more bunch examples of the solution injection apparatus of the solution injection unit of shape arrangement that are that have that use in order to implement above-mentioned example are described below.
Figure 8 shows that a configuration example of a little eliminating the solution injection apparatus, in addition Fig. 9 and Figure 10 shows that the solution injection unit of the configuration nozzle that this point-like solution injection apparatus is used.
Point-like solution injection apparatus shown in Figure 8 has solution injection unit 806 in device, utilize it to come sprayed solution, by obtain desirable figure like this on substrate 802.In this point-like solution injection apparatus,,, also can adopt with the plastic base to be the resin substrate of representative or to be the processed objects such as semiconductor wafer of representative with silicon except the glass substrate of desirable size as substrate 802.
In Fig. 8, substrate 802 is sent into housing 801 inside from sending into mouth 804, and the substrate of the solution inject process that is through with is sent from sending mouth 805.In housing 801 inside, substrate 802 is placed on the transfer station 803, transfer station 803 connection send into mouthful with track 810a that sends mouthful and 810b on mobile.
The 807a of support sector of solution injection unit and 807b support the solution injection unit 806 of sprayed solution and make the solution injection unit move to the mechanism of any part in the X-Y plane.The 807a of support sector of solution injection unit moves along the directions X parallel with band to band transfer module 803, with the 807b of support sector of the fixing solution injection unit of the 807a of support sector of solution injection unit on the solution injection unit 806 installed move along the Y direction vertical with directions X.If substrate 802 is sent into housing 801 inside, then meanwhile, the 807a of support sector of solution injection unit and solution injection unit 806 move along X and Y direction respectively, are set in the initial assigned position that carries out the solution inject process.The 807a of support sector of solution injection unit and solution injection unit 806 are when substrate is sent into or substrate carries out when sending to initial position mobile, by can efficiently carrying out the solution inject process like this.
In case utilize moving of transfer station 803, make substrate 802 arrive the assigned position that solution injection unit 806 is waited for, then begin the solution inject process.The solution inject process is that the combination that utilizes the solution that relatively moves and undertaken by the solution injection unit 806 that the support sector of solution injection unit supports of the 807a of support sector of solution injection unit and solution injection unit 806 and substrate 802 to spray is finished.In the cycle of the support sector by regulating substrate or solution injection unit and the translational speed of solution injection unit and the sprayed solution of being undertaken by solution injection unit 806, can on substrate 802, draw desirable figure.Particularly, when therefore preferably solution sprays the mobile of transfer station stopped, only making the support sector 807 and the scanning of solution injection unit of controlled good solution injection unit because the solution inject process requires high accuracy.In addition, the 807a of support sector of solution injection unit 806 and solution injection unit also can be not limited to only direction along the scanning of X-Y direction respectively, but by back and forth or come and go and repeat to carry out the solution inject process.
Solution is to supply with to enclosure interior from the solution supply unit 809 that is arranged on housing 801 outsides, and by the 807a of support sector and the 807b of solution injection unit, the solution chamber to solution injection unit 806 inside supplies with again.It is to utilize control unit 808 controls that are arranged on housing 801 outsides that this solution is supplied with, but also can utilize the interior control unit of adorning of the 807a of support sector of the solution injection unit of enclosure interior to control.
In addition, the same control unit 808 that is arranged on housing 801 outsides that utilizes that moves of the support sector of transfer station and solution injection unit is controlled.
Though do not draw among Fig. 8, also can be as required also the transducer used of the pattern alignment position on setting and substrate or the substrate, gas that gas is introduced housing introduce unit, enclosure interior exhaust exhaust unit, to substrate carry out the unit of heat treated, to the unit of substrate irradiates light and the unit etc. of measuring various physical parameters such as temperature and pressure.In addition, these unit also can utilize control unit 808 unified controls that are arranged on housing 801 outsides.Have again,, then can help boosting productivity from outside unified management operation if utilize LAN cable, WLAN, optical fiber etc. and production management system etc. to be connected control unit 808.
The following describes the structure of solution injection unit 806 inside.What Fig. 9 saw is the section parallel with the Y direction of the solution injection unit 806 of Fig. 8.
, after being stored in fluid reservoir 903 by solution chamber's circulation path 902, moves the solution of the internal feed of solution injection unit 806 from the outside to spraying the molten nozzle 909 of penetrating usefulness.Nozzle segment 910 is by in the nozzle that the solution of appropriateness is packed into and the fluid resistance part 904 that is provided with, constitute to the solution pressurization and to compression chamber 905 and solution jet 907 that the nozzle outer jet is used.
Lead zirconate titanate (Pb (Zr, Yi) O that adds voltage and be out of shape used in the configuration of 905 sidewall in the compression chamber
3) wait the piezoelectric element 906 of material with piezoelectric effect.Therefore, add voltage, just can extrude the solution in the compression chamber 905, to outside sprayed solution 908 by the piezoelectric element 906 that the target nozzle is disposed.
The diameter of nozzle is set at 0.1～50 μ m (preferably 0.6～26 μ m), is set at 0.00001pl～50pl (preferably 0.0001～40pl) from the emitted dose of the constituent of nozzle ejection.The increase that is directly proportional with the size of nozzle diameter of this emitted dose.In addition, in order to drop in desirable position, the distance of processed object and nozzle spray-orifice is preferably approaching as far as possible, and it is proper to be set at 0.1～2mm left and right sides.In addition, even do not change nozzle diameter, and, also can control emitted dose by changing to the added pulse voltage of piezoelectric element.Preferably set these injection conditions, make live width become below about 10 μ m.
In addition, the viscosity of used constituent is preferably below the 300mPas in the solution spray regime, and this is can spray constituent in order to prevent drying, to make swimmingly from jet.In addition, the surface tension of constituent is preferably below the 40nN/m.But, can suitably adjust the viscosity of constituent etc. according to used solvent or purposes.As an example, be 5～50mPas with ITO, ITSO, organo indium, organotin solution or the viscosity that is dispersed in the constituent in the solvent, be 10～20mPas with gold dissolving or the viscosity that is dispersed in the constituent in the solvent.
In the present invention, be that the employing piezoelectric element is that so-called piezoelectricity mode is carried out the solution injection, but depend on the material of solution, also can adopt the so-called thermojet mode that makes the heater heating and produce bubble and solution is extruded.In this case, adopt the structure that piezoelectric element 906 is replaced into heater.
In addition, spray in the nozzle 910 of usefulness at solution, the wettability of solution and solution chamber's circulation path 902, fluid reservoir 903, liquid resistance part 904, compression chamber 905 and solution jet 907 is very important.Therefore, also can in these circulation paths, form and adjust the carbon film used with the wettability of material and resin molding etc.
Utilize said units, can be on treatment substrate sprayed solution.In the solution spray regime dual mode is arranged, a kind of is continuous injection solution and form the so-called continuation mode of continuous threadlike graph, another kind is the what is called mode as required of point-like sprayed solution, shown in constituting is mode as required at device of the present invention, but also can use the solution injection unit according to continuation mode (not shown).
Figure 10 (A)～(C) is depicted as the bottom schematic view of the solution injection unit of Fig. 9.Figure 10 (A) is the basic configuration that a solution injection 1002 is set in solution injection unit bottom 1001.Different therewith is, in Figure 10 (B), is that solution jet 1002 with solution injection unit bottom 1001 increases to 3 and constitute bunch shape configuration of the such what is called of triangle.In addition, in Figure 10 (C), be up and down and row arrangement with the solution jet.In this configuration, after top solution jet 1002 sprayed solution, add that the time difference sprays same solution from following solution loophole 1002 to same position, by like this can be before the solution on the substrate that has sprayed produces dry or solidifies, pile up same solution again and increase thickness.In addition, when superincumbent solution jet produces hole plug because of solution etc., following solution jet is played as standby function.
By using the solution injection unit to form film selectively, reducing the use amount of the film (resist, metal, semiconductor film, organic membrane etc.) that its major part in the past is wasted, thereby can reduce manufacturing cost.
(example 9)
An example of the atmospheric pressure plasma device of can wire handling that uses in order to implement above-mentioned example with Figure 11 to Figure 12 explanation below.
It is device top view and cutaway view that Figure 11 (A) reaches (B).In the figure, in boxlike chamber 1106, place the glass substrate of desirable size and be the processed objects 1103 such as resin substrate of representative with the plastic base.As the load mode of processed object 1103, can enumerate horizontal transmission, be the vertical transmission of purpose but also can carry out reduce to transmit mechanical occupied area etc.
In transfer chamber 1107, utilize connecting gear (robot arm etc.) 1105 to transmit on the processed object 1103 that is configured in the boxlike chamber 1106 to plasma processing chamber 1108.In the plasma processing chamber 1108 adjacent, air-flow control unit 1100 is set, makes track 1104a and the 1104b that the plasma generating unit 1102 that forms the wire plasma moves and carries out mobile unit that processed object 1103 moves etc. with transfer chamber 1107.In addition, as required, well-known heating units (not shown) such as lamp can be set.
Air-flow control unit 1100 be with dustproof be the unit of purpose, utilize the inert gas that sprays from ejiction opening 1101 to carry out air-flow control, make and open with outer air bound.Plasma generating unit 1102 utilizes along the track 1104a of the direction of transfer configuration of processed object 1103 and the track 1104b that disposes along the direction vertical with this direction of transfer, moves to the position of regulation.
An example of plasma generating unit 1102 is described with Figure 12 below.Figure 12 (A) is depicted as the stereogram of the plasma generating unit 1102 that forms the wire plasma, and Figure 12 (B)～(D) is depicted as the electrode cutaway view.
In Figure 12 (B), dotted line is represented the path of gas, and 1201 and 1202 is the metal electrodes that had conductivity by aluminium, copper etc., and the 1st electrode 1201 is connected with power supply (high frequency electric source) 1206.In addition, also can be connected the cooling system (not shown) that makes cooling water circulation usefulness with the 1st electrode 1201.If cooling system is set, the then circulation of handy cooling water can prevent the heating when continuous surface is handled, and improves processed continuously efficient.The 2nd electrode 1202 has the shape on every side of surrounding the 1st electrode 1201, passes through circuit ground.In addition, the 1st electrode 1201 and the 2nd electrode 1202 have the cylindrical shape that the pinhole of nozzle-like is arranged at its front end.In the space between two electrodes of the 1st electrode 1201 and the 2nd electrode 1202, supply with technology gas by gas feed unit (gas tank) 1208 by valve 1205.So the atmosphere in this space is replaced, if under this state, utilize high frequency electric source 1206 to the 1st electrode 1201 add high frequency voltage (10～500MHz), in above-mentioned space plasma takes place then.Then, if the chemisms such as ion, atomic group that comprise that will utilize this plasma to generate encourage the surface irradiation of the reactive flow of kind to processed object, the then surface treatment that can stipulate on the surface of this processed object.
In addition, the technology of fill gas object supply unit (gas tank) 1208 will suitably be set according to the surface-treated kind of carrying out in the process chamber with the kind of gas.In addition, discharge filter 1203 and the valve 1205 of gas, introduce gas extraction system 1207 by removing the rubbish in the entrained gas.
In addition, some at least electrodes of the 1st electrode and the 2nd electrode must use solid dielectric (not shown) to cover.The electrode direct relative position each other if overwrite media is arranged not is then from this generation arc discharge.As solid dielectric, composite oxides such as plastics such as metal oxides such as silicon dioxide, aluminium oxide, zirconium dioxide, titanium dioxide, PETG, polytetrafluoroethylene, glass, barium titanate etc. can have been enumerated.The shape of solid dielectric can be a sheet, can be film like also, and thickness is 0.05～4mm preferably.In order to produce discharge plasma, need high voltage, if thin excessively, when then adding voltage, can cause insulation damages, produce arc discharge.
Then, Figure 12 (C) (D) is depicted as the wire plasma generating unit 1102 different with the section of Figure 12 (B).The 1st electrode 1201 to the 2 electrodes 1202 of Figure 12 (C) are long, and the 1st electrode 1201 have the sharp shape that has, the plasma generating unit 1102 shown in Figure 12 (D) has the plasma that will be between the 1st electrode 1201 and the 2nd electrode 1202 the takes place shape to outer jet in addition.
Arrange by gas nozzle being wire, etching or grinding are carried out in the part, can also reduce the use amount of gas, can reduce manufacturing cost.
In addition, by with etching or grind near atmospheric pressure or atmospheric pressure the pressure and handle, can simplify the vacuum chamber of constituent apparatus and pump etc., can prevent that locking apparatus maximizes.And the maintenance cost of reduction device, and owing in technology, do not need to reach the processing of carrying out after the vacuum state with vacuumizing in the chamber in the past, can under near the pressure atmospheric pressure or the atmospheric pressure, handle, therefore can shorten the processing substrate time.
(example 10)
The example of other structure of the plasma generating unit 1102 of above-mentioned example 9 is described with Figure 15 below.Figure 15 (A) is depicted as the stereogram that a plurality of cylinder electrodes is the plasma generating unit 1102 of wire configuration, and Figure 15 (B)～(D) is depicted as the cutaway view of a cylindrical shape plasma generating unit.
In Figure 15 (B), dotted line is represented the path of gas, and 1501 and 1502 is the metal electrodes that had conductivity by aluminium, copper etc., and the 1st electrode 1501 is connected with power supply (high frequency electric source) 1506.In addition, also can be connected the cooling system (not shown) that makes cooling water circulation usefulness with the 1st electrode 1501.If cooling system is set, the then circulation of handy cooling water can prevent the heating when continuous surface is handled, and improves processed continuously efficient.The 2nd electrode 1502 has the shape on every side of surrounding the 1st electrode 1501, passes through circuit ground.In addition, the 1st electrode 1501 and the 2nd electrode 1502 have the cylindrical shape that the pinhole of nozzle-like is arranged at its front end.In the space between two electrodes of the 1st electrode 1501 and the 2nd electrode 1502, supply with technology gas by gas feed unit (gas tank) 1508 by valve 1505.So the atmosphere in this space is replaced, if under this state, utilize high frequency electric source 1506 to the 1st electrode 1501 add high frequency voltage (10～500MHz), in above-mentioned space plasma takes place then.Then, if the chemisms such as ion, atomic group that comprise that will utilize this plasma to generate encourage the surface irradiation of the reactive flow of kind to processed object, the then surface treatment that can stipulate on the surface of this processed object.
In addition, the technology of fill gas object supply unit (gas tank) 1508 will suitably be set according to the surface treatment of carrying out in the process chamber with the kind of gas.In addition, discharge filter 1503 and the valve 1505 of gas 1504, introduce gas extraction system 1507 by removing the rubbish in the entrained gas.
In addition, some at least electrodes of the 1st electrode and the 2nd electrode must use solid dielectric (not shown) to cover.The electrode direct relative position each other if overwrite media is arranged not is then from this generation arc discharge.As solid dielectric, composite oxides such as plastics such as metal oxides such as silicon dioxide, aluminium oxide, zirconium dioxide, titanium dioxide, PETG, polytetrafluoroethylene, glass, barium titanate etc. can have been enumerated.The shape of solid dielectric can be a sheet, can be film like also, and thickness is 0.05～4mm preferably.In order to produce discharge plasma, need high voltage, if thin excessively, when then adding voltage, can cause insulation damages, produce arc discharge.
Then, Figure 15 (C) (D) is depicted as the wire plasma generating unit 1102 different with the section of Figure 15 (B).The 1st electrode 1501 to the 2 electrodes 1502 of Figure 15 (C) are long, and the 1st electrode 1501 have the sharp shape that has, the plasma generating unit 1502 shown in Figure 15 (D) has the plasma that will be between the 1st electrode 1501 and the 2nd electrode 1502 the takes place shape to outer jet in addition.
In addition, be wireless cylindrical shape plasma generating unit that wire arranges and must computerized control etc., can carry out plasma one by one and form.By like this, can form wire plasma zone certainly, can also selectively form plasma.
Have again, arrange cylindrical shape plasma generating unit, carry out etching or grinding selectively, can also reduce the use amount of gas, can reduce manufacturing cost by wire.
In addition, by with etching or grind near atmospheric pressure or atmospheric pressure the pressure and handle, can simplify the vacuum chamber of constituent apparatus and pump etc., can prevent that locking apparatus maximizes.And the maintenance cost of reduction device, and owing in technology, do not need to reach the processing of carrying out after the vacuum state with vacuumizing in the chamber in the past, can under near the pressure atmospheric pressure or the atmospheric pressure, handle, therefore can shorten the processing substrate time.
(example 11)
In the invention process form, the distance of gas ejection ports and substrate is below the 3mm, and reasonable is below the 1mm, preferably below the 0.5mm.Also can utilize contactless distance detecting transducer to wait the distance of control and treatment substrate surface and gas ejection ports.
(example 12)
In example 9 and example 10, also can be with the recovery such as unstrpped gas that once utilizing, through utilizations again such as clarifiers.
(example 13)
In the invention process form, Wiring method also can adopt following such method.
Get various materials such as glass, quartz, semiconductor, plastics, metal, glass epoxy resin, pottery as substrate 1300.Then, utilize injector head 1301 on substrate 1300, to spray the constituent that has particulate, receives particle and well-known electroconductive particle, by such formation wiring 1302 and 1303 (Figure 13 (A)).
Then, if be necessary, carry out heat treated etc.,, improve the viscosity of this constituent by making its solvent evaporates like this to having formed 1302 and 1303 the substrate of connecting up.In addition, this heat treated can be carried out when utilizing the solution spray regime to form film at every turn, also can carry out in each any operation, also can carry out together after the preface end on all.
Then, utilize solution spray mode, in wiring 1302 and 1303, spray resist 1304 and 1305 (Figure 13 (B)).
Then, utilize wire plasma generating unit 1306 and support 1310, resist 1304 and 1305 as mask, will be connected up and 1302 and 1303 carries out etching (Figure 13 (C)).
Then, utilize wire plasma generating unit 1306 and support 1310, remove resist 1304 and 1305 (Figure 13 (D)) by grinding.
Like this, when utilizing the solution spray regime to form wiring, do not adopt well-known photoetching process, and utilize the solution spray regime directly to carry out the formation of resist figure, by cutting down the use amount of photoetching process and resist like this.Have again, directly form wiring, can also cut down the use amount of resist and the etching procedure of wiring material by utilizing the solution spray regime.
By adopting such Wiring method, can cut down the sheet number of the photomask that in the past in each operation, used significantly.
(example 14)
In the invention process form, Wiring method also can adopt following such method.
Get various materials such as glass, quartz, semiconductor, plastics, metal, glass epoxy resin, pottery as substrate 1600.Then, utilize solution injection unit 1601 on substrate 1600, to spray the constituent that has particulate, receives particle and well-known electroconductive particle, by such formation wiring 1602 and 1603 (Figure 16 (A)).
Then, if be necessary, carry out heat treated etc.,, improve the viscosity of this constituent by making its solvent evaporates like this to having formed 1602 and 1603 the substrate of connecting up.In addition, this heat treated can be carried out when utilizing the solution spray regime to form film at every turn, also can carry out in each any operation, also can carry out together after the preface end on all.
Then, utilize solution spray mode, in wiring 1602 and 1603, spray resist 1604 and 1605 (Figure 16 (B)).
Then, utilize to be the plasma 1607 that a plurality of cylindrical shape plasma generating units 1606 that wire arranges and support 1610 form selectively, resist 1604 and 1605 as mask, will be connected up and 1602 and 1603 carries out etching (Figure 16 (C)).
Then, utilization is a plurality of cylindrical shape plasma generating units 1606 of wire arrangement and the plasma 1607 that support 1610 forms selectively, removes resist 1604 and 1605 (Figure 16 (D)) by grinding.
Like this, when utilizing the solution spray regime to form wiring, do not adopt well-known photoetching process, and utilize the solution spray regime directly to carry out the formation of resist figure, by cutting down the use amount of photoetching process and resist like this.Have again, directly form wiring, can also not use resist, in addition, cut down the etching procedure of wiring material by utilizing the solution spray regime.
By adopting such Wiring method, can cut down the sheet number of the photomask that in the past in each operation, used significantly.
(example 15)
In order to form wiring figure of the present invention, adopt to make metal microparticle be dispersed in constituent in the organic solvent.It is 1～50nm that metal microparticle adopts average grain diameter, be preferably the material of 3～7nm.Representational is silver or golden particulate, and at dispersants such as its surface coverage amine, alcohol, mercaptan.Organic solvent is that phenolic resins or epoxy are resin etc., is fit to adopt the material of Thermocurable or photo-curable.The viscosity adjustment of this constituent is as long as add thixotropic agent or retarder thinner.
Utilize the solution injection unit by heat treated or photo-irradiation treatment organic solvent to be solidified at the constituent that is formed an amount of injection on the face, the volume contraction that produces owing to the curing of following organic solvent, make between the metal microparticle to contact, promote fusion, molten sticking or cohesion.That is, to form average grain diameter be 1～50nm, be preferably the metal microparticle fusion of 3～7nm, the wiring of molten sticking or cohesion.Like this, utilize fusion, molten sticking or cohesion, form face state of contact between the metal microparticle, by the low resistance that can realize like this connecting up.
The present invention forms electroconductive member pattern by using such constituent, also forms live width easily and be the wiring figure about 1～10 μ m.In addition, even the diameter of contact hole is about 1～10 μ m, equally also constituent can be inserted wherein.That is, can form Miltilayer wiring structure with fine wiring figure.
Constituent shown in this example is applicable to whole forms of example 1～15.
(example 16)
Following as adopting electronic equipment of the present invention, can enumerate video camera, the data camera, goggle-type display (head-mounted display), navigation system, sound reproducing device (automobile audio, combination audio etc.), notebook personal computer, game machine, portable data assistance (mobile computer, mobile phone, portable game machine or e-book etc.), image playback apparatus with recording medium (is that Digital Versatile Disc recording mediums such as (DVD, digital universal discs) is reset specifically, and have a device of the display that can show its image) etc.Figure 14 shows that the object lesson of these electronic equipments.
Figure 14 (A) is a display unit, comprises housing 14001, supports platform 14002, display unit 14003, loudspeaker unit 14004, video input etc. 14005 etc.The present invention can be used in the circuit that constitutes display unit 14003.Utilize the present invention, finish the display unit shown in Figure 14 (A).In addition, display unit comprises personal computer and receives with, 20～80 inches television broadcasting and show with, advertisement that all information of using etc. shows and use display unit.
Figure 14 (B) is a digital camera, comprises body 14101, display unit 14102, taking unit 14103, operation keys 14104, outside connector 14105, shutter 14106 etc.The present invention can be used in the circuit that constitutes display unit 14102.In addition, utilize the present invention, finish the digital camera shown in Figure 14 (B).
Figure 14 (C) is a notebook personal computer, comprises body 14201, housing 14202, display unit 14203, keyboard 14204, outside connector 14205, location mouse 14206 etc.The present invention can be used in the circuit that constitutes display unit 14203.In addition, utilize the present invention, finish the notebook personal computer shown in Figure 14 (C).
Figure 14 (D) is a mobile computer, comprises body 14301, display unit 14302, switch 14303, operation keys 14304, infrared ray mouth 14305 etc.The present invention can be used in the circuit that constitutes display unit 14302.In addition, utilize the present invention, finish the mobile computer shown in Figure 14 (D).
Figure 14 (E) is the pocket image playback apparatus (being the DVD replay device specifically) with recording medium, comprises body 14401, housing 14402, display unit A 14403, display unit B 14404, recording medium (DVD etc.) and reads in unit 14405, operation keys 14406, loudspeaker unit 14407 etc.Display unit A 14403 main displays image information, display unit B 14404 main display text informations, the present invention can be used in 14403 and 14404 the circuit that constitutes display unit A and B.In addition, the image playback apparatus with recording medium also comprises home game machine etc.In addition, utilize the present invention, finish the DVD replay device shown in Figure 14 (E).
Figure 14 (F) is goggles display (head-mounted display), comprises body 14501, display unit 14502, support arm 14503.The present invention can be used in the circuit that constitutes display unit 14502.In addition, utilize the present invention, finish the goggle-type display shown in Figure 14 (F).
Figure 14 (G) is a video camera, comprises body 14601, display unit 14602, housing 14603, outside connector 14604, remote control receiving element 14605, taking unit 14606, battery 14607, sound input unit 14608, operation keys 14609 etc.The present invention can be used in the circuit that constitutes display unit 14602.In addition, utilize the present invention, finish the video camera shown in Figure 14 (G).
Figure 14 (H) is the unit, comprises body 14701, housing 14702, display unit 14702, sound input unit 14704, voice output unit 14705, operation keys 14706, outside connector 14707, antenna 14708 etc.The present invention can be used in the circuit that constitutes display unit 14703.In addition, display unit 14703 can suppress the current sinking of mobile phone by the literal in the background display white of black.In addition, utilize the present invention, finish the mobile phone shown in Figure 14 (H).
As mentioned above, the scope of application of the present invention is extremely wide, can be used in the electronic equipment of all spectra.In addition, the electronic equipment shown in here also can adopt the semiconductor device of any structure shown in of the present invention.
Claims (24)
1. the manufacture method of a semiconductor device is characterized in that, has
The 1st solution injection unit that use to spray conductive material form the operation of wiring,
Use the 2nd solution injection unit in described wiring, form the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
2. the manufacture method of a semiconductor device is characterized in that, has
The solution injection unit that use to spray conductive material form the operation of wiring,
At least in described wiring, form the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
3. the manufacture method of a semiconductor device is characterized in that, has
The operation of formation wiring,
Use the solution injection unit in described wiring, form at least the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
4. as the manufacture method of each described semiconductor device of claim 1 to 3, it is characterized in that,
The solution injection unit has one or more solution jets.
5. as the manufacture method of each described semiconductor device of claim 1 to 3, it is characterized in that,
When utilizing the solution injection unit to spray wiring material or resist etc., substrate is heated in advance.
6. as the manufacture method of each described semiconductor device of claim 1 to 3, it is characterized in that,
Under near the pressure atmospheric pressure or the atmospheric pressure, carry out the processing of etching or grinding or two aspects.
7. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The 1st solution injection unit that use to spray conductive material form the operation of wiring,
Use the 2nd solution injection unit in described wiring, form the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
8. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The solution injection unit that use to spray conductive material form the operation of wiring,
At least in described wiring, form the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
9. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The operation of formation wiring,
Use the solution injection unit in described wiring, form at least the resist mask operation and
As mask, use atmospheric pressure plasma device described wiring to be carried out the operation of etching with described resist mask with wire plasma generating unit.
10. as the manufacture method of the display unit of each described employing semiconductor device of claim 7 to 9, it is characterized in that,
The solution injection unit has one or more solution jets.
11. the manufacture method as the display unit of each described employing semiconductor device of claim 7 to 9 is characterized in that,
When utilizing solution injection unit sprayed solution, substrate is heated in advance.
12. the manufacture method as each described semiconductor device of claim 7 to 8 is characterized in that,
Under near the pressure atmospheric pressure or the atmospheric pressure, carry out the processing of etching or grinding or two aspects.
13. the manufacture method of a semiconductor device is characterized in that, has
The 1st solution injection unit that use to spray conductive material form the operation of wiring,
Use the 2nd solution injection unit in described wiring, form the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
14. the manufacture method of a semiconductor device is characterized in that, has
The solution injection unit that use to spray conductive material form the operation of wiring,
At least in described wiring, form the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
15. the manufacture method of a semiconductor device is characterized in that, has
The operation of formation wiring,
Use the solution injection unit in described wiring, form at least the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
16. the manufacture method as each described semiconductor device of claim 13 to 15 is characterized in that,
The solution injection unit has one or more solution jets.
17. the manufacture method as each described semiconductor device of claim 13 to 15 is characterized in that,
When utilizing the solution injection unit to spray wiring material or resist etc., substrate is heated in advance.
18. the manufacture method as each described semiconductor device of claim 13 to 15 is characterized in that,
Under near the pressure atmospheric pressure or the atmospheric pressure, carry out etching or milled processed.
19. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The 1st solution injection unit that use to spray conductive material form the operation of wiring,
Use the 2nd solution injection unit in described wiring, form the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
20. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The solution injection unit that use to spray conductive material form the operation of wiring,
At least in described wiring, form the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
21. a manufacture method that adopts the display unit of semiconductor device is characterized in that having
The operation of formation wiring,
Use the solution injection unit in described wiring, form at least the resist mask operation and
, use a plurality of plasma generating units are atmospheric pressure plasma device that wire arranges carries out etching to described wiring operation as mask with described resist mask.
22. the manufacture method as the display unit of each described employing semiconductor device of claim 19 to 21 is characterized in that,
The solution injection unit has one or more solution jets.
23. the manufacture method as each described semiconductor device of claim 19 to 21 is characterized in that,
When utilizing solution injection unit sprayed solution, substrate is heated in advance.
24. the manufacture method as each described semiconductor device of claim 19 to 21 is characterized in that,
Under near the pressure atmospheric pressure or the atmospheric pressure, carry out etching processing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP028952/2003 | 2003-02-06 | ||
| JP2003029012 | 2003-02-06 | ||
| JP029012/2003 | 2003-02-06 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101698366A Division CN101848594B (en) | 2003-02-06 | 2004-01-30 | Plasma apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1745466A true CN1745466A (en) | 2006-03-08 |
Family
ID=36140038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200480003254 Pending CN1745466A (en) | 2003-02-06 | 2004-01-30 | Method of manufacturing semiconductor device and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1745466A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101125324B (en) * | 2006-08-17 | 2012-08-29 | 株式会社半导体能源研究所 | Film forming method, discharging droplet method and droplet discharging device |
-
2004
- 2004-01-30 CN CN 200480003254 patent/CN1745466A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101125324B (en) * | 2006-08-17 | 2012-08-29 | 株式会社半导体能源研究所 | Film forming method, discharging droplet method and droplet discharging device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1577775A (en) | Method for manufacturing semiconductor device | |
| CN1293647C (en) | Semiconductor device and manufacturing method thereof | |
| CN1288710C (en) | Semiconductor device and its manufacture | |
| CN101848594B (en) | Plasma apparatus | |
| CN1309567C (en) | Base board ,device and manufacturing method ,active matrix base board manufacturing method and electro-optical device | |
| CN1832173A (en) | Pixel structure, active matrix substrate, method of manufacturing active matrix substrate, electro-optical device, and electronic apparatus | |
| CN1745467A (en) | Method for manufacturing display device | |
| CN1574207A (en) | Pattern forming method, device, method of manufacture thereof, electro-optical apparatus, and electronic apparatus | |
| CN1700417A (en) | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television | |
| CN1555082A (en) | Laser apparatus, laser irradiation method and semiconductor device and its producing method | |
| CN1575105A (en) | Thin film pattern forming method, device and method of manufacture, electrooptical device | |
| CN1713058A (en) | Active matrix substrate and manufacturing method thereof, and electronic device | |
| CN1781184A (en) | Droplet discharging device, method for forming pattern and method for manufacturing semiconductor device | |
| CN1708852A (en) | Semiconductor device and manufacturing method thereof | |
| CN1765009A (en) | Semiconductor device and method for manufacturing same | |
| CN1756456A (en) | Pattern formed structure, method of forming pattern, device, electrooptical device and electronic equipment | |
| CN1697196A (en) | Semiconductor device and manufacturing method thereof | |
| CN1906527A (en) | Display device and manufacturing method of the same | |
| CN1739969A (en) | Droplet discharge apparatus | |
| CN1574201A (en) | Pattern formation method and pattern formation apparatus, method for manufacturing device, electro-optical device, | |
| CN1870250A (en) | Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus | |
| CN1906528A (en) | Liquid crystal display device and method for manufacturing the same | |
| CN1681375A (en) | Method for forming film pattern, method for manufacturing device, electro-optical apparatus, and electronic apparatus | |
| CN1866519A (en) | Bank structure, wiring pattern forming method, device, electro-optical device, and electronic apparatus | |
| CN1551297A (en) | Thin membrane pattern forming method,device and its manufacturing method,electrooptical device and electronic instrument |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Open date: 20060308 |