CN1741875A - Apparatus and method for polishing semiconductor wafers - Google Patents

Apparatus and method for polishing semiconductor wafers Download PDF

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Publication number
CN1741875A
CN1741875A CN 200480002944 CN200480002944A CN1741875A CN 1741875 A CN1741875 A CN 1741875A CN 200480002944 CN200480002944 CN 200480002944 CN 200480002944 A CN200480002944 A CN 200480002944A CN 1741875 A CN1741875 A CN 1741875A
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wafer
carrier
load
grinding
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CN100537134C (en
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丁寅权
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Conmy technology Limited by Share Ltd
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丁寅权
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Abstract

An apparatus and method for polishing objects, such as semiconductor wafers, utilizes one or more pivotable load-and-unload cups (182) to transfer the objects to and/or from one or more object carriers (160) to polish the objects. Each pivotable load-and-unload cup may be configured to transfer the objects to and/or from a single object carrier. Alternatively, each pivotable load-and-unload cup may be configured to transfer the objects to and/or from two object carriers. The pivotable load-and-unload cups may be configured to be pivoted about one or more pivoting points over at least one polishing surface, such as a polishing pad surface.

Description

The Apparatus and method for of polishing semiconductor wafers
Technical field
The present invention relates to a kind of semi-conductor processing equipment, particularly relate to a kind of Apparatus and method in order to polishing semiconductor wafers.
Present application for patent has the right to advocate the U.S. Provisional Patent Application sequence number the 60/442nd that on January 27th, 2003 was proposed, No. 952, the U.S. Provisional Patent Application sequence number the 60/461st that on April 8th, 2003 was proposed, 147, the U.S. Provisional Patent Application sequence number the 60/462nd that on April 11st, 2003 was proposed, No. 015, the U.S. Provisional Patent Application sequence number the 60/464th that on April 21st, 2003 was proposed, No. 280, the U.S. Provisional Patent Application sequence number 60/466 that on April 30th, 2003 was proposed, 587, the U.S. Provisional Patent Application sequence number 60/468 that on May 5th, 2003 was proposed, 239, the U.S. Provisional Patent Application sequence number 60/468 that on May 6th, 2003 was proposed, the U.S. Provisional Patent Application sequence number the 60/477th that was proposed in 10th in 6 years in 561 and 2003 years, No. 489 interests are incorporated above-mentioned all patent application cases at this into to mention mode.
Background technology
When more metal levels and inner layer dielectric layer are stacked in when partly leading on the wafer, it is important that the zone of semiconductor crystal wafer and general planarization become gradually.The method of one preferable smooth semiconductor crystal wafer is chemical-mechanical polishing (chemical mechanical polishing, CMP) method, wherein the surface of semiconductor wafer is by using the slurry solution (slurry solution) that grinds that is supplied between an above-mentioned wafer and a grinding pad (polishing pad) to grind.Above-mentioned CMP method is used in damascene process processing procedure (damascene process) widely, to form steel structure on above-mentioned semiconductor crystal wafer.
Usually, one CMP equipment comprises a grinding table (polishing table) and a wafer carrier (wafer carrier), and wherein above-mentioned grinding table is that to be equipped with a grinding pad and above-mentioned wafer carrier be in order to support the semiconductor wafer and above-mentioned wafer is depressed into above-mentioned grinding pad.One of most important usefulness of one CMP equipment is productivity ratio.For high productivity ratio, CMP equipment needs more grinding table and more crystal carrier usually.When the grinding table in being included in a CMP equipment and the number of wafer carrier increased, it is important that the configuration of above-mentioned grinding table and wafer carrier just becomes, so that can grind a plurality of semiconductor crystal wafers effectively.Moreover, transport above-mentioned semiconductor crystal wafer and also become important to above-mentioned wafer carrier and from the mode that above-mentioned wafer carrier is transported above-mentioned semiconductor crystal wafer.Yet because the CMP equipment with big space surface needs big toilet (clean room) to hold the said equipment, so also must consider the space surface of above-mentioned CMP equipment, this can cause bigger running cost.
Because these problems, neededly a kind ofly come the Apparatus and method for of polishing semiconductor wafers with high production rate, wherein the said equipment and method only need little space surface.
Summary of the invention
One in order to grind a plurality of objects (for example: semiconductor crystal wafer) Apparatus and method for uses one or more the pivot to load and unload load plate (pivotable load-and-unload cup), above-mentioned a plurality of objects be transported to one or more object carriers and/or transport above-mentioned a plurality of object, so that grind above-mentioned a plurality of object from above-mentioned one or more object carriers.Each can load and unload load plate and can be configured in order to transport the single object carrier of above-mentioned a plurality of object to and/or to transport above-mentioned a plurality of object from above-mentioned single object carrier.In another situation, each can pivot load and unload load plate can be configured in order to above-mentioned a plurality of objects are transported to two object carriers and/or certainly these two object carriers transport above-mentioned a plurality of object.Above-mentioned pivot to load and unload load plate can be configured to so that (for example: a grinding pad surface) Shang Fang one or more pivotal points are that the center rotates at least one lapped face.
One equipment according to one embodiment of the invention comprises that a lapped face, is positioned at the object carrier and a loading of above-mentioned lapped face top and unloads load plate, wherein above-mentioned loading and to unload load plate be that a pivotal point that is configured to the object carrier that is positioned at above-mentioned lapped face top is that the center rotates is so that can make above-mentioned object from above-mentioned loading and unload load plate and be transported to above-mentioned object carrier.
One equipment in order to grind a plurality of objects according to another embodiment of the present invention comprises at least one lapped face, one is positioned at the first object carrier of above-mentioned at least one lapped face top, one is positioned at the second object carrier of above-mentioned at least one lapped face top, one is configured in order to be displaced into above-mentioned first and second object carrier with the loading that one of the object to be ground in first and second object is transported in above-mentioned first and second object carrier and unload load plate and one be configured in order to above-mentioned first and second object is transported to above-mentioned loading and unloads load plate and from above-mentioned loading and unload the object conveyer of above-mentioned first and second object of load plate transhipment.The above-mentioned first object carrier is to be configured in order to grip above-mentioned first object.The above-mentioned second object carrier is to be configured in order to grip above-mentioned second object.
One equipment according to another embodiment of the present invention comprises an object conveyer and first and second grinding unit.Each grinding unit of above-mentioned first and second grinding unit comprises first and second lapped face, one is positioned at the first object carrier of above-mentioned first lapped face top, one is positioned at the second object carrier of above-mentioned second lapped face top, one to be configured to the above-mentioned first object carrier be that the center rotates to transport one first object to the above-mentioned first object carrier and transport first of above-mentioned first object from the above-mentioned first object carrier and load and unload that load plate and is configured to the above-mentioned second object carrier is that the center rotates to transport one second object to the above-mentioned second object carrier and transport second of above-mentioned second object from the above-mentioned second object carrier and load and unload load plate.The above-mentioned first object carrier is to be configured in order to grip above-mentioned first object.The above-mentioned second object carrier is to be configured in order to grip above-mentioned second object.Above-mentioned wafer conveyer is to be configured in order to first and second loading of transporting at least one grinding unit of above-mentioned first and second object to above-mentioned first and second grinding unit and to unload load plate and first and second loading of at least one grinding unit from above-mentioned first and second grinding unit and unload above-mentioned first and second object of load plate transhipment.
One equipment according to another embodiment comprises a lapped face, be positioned at first and second object carrier of above-mentioned lapped face, one to be configured to the above-mentioned first object carrier be center rotation to transport one first object to the above-mentioned first object carrier and transport first of above-mentioned first object from the above-mentioned first object carrier and load and unload load plate and to be configured to the above-mentioned second object carrier be the center rotation to transport one second object to the above-mentioned second object carrier and transport second of above-mentioned second object from the above-mentioned second object carrier and load and unload load plate.The above-mentioned first object carrier is to be configured in order to grip above-mentioned first object.The above-mentioned second object carrier is to be configured in order to grip above-mentioned second object.
At least one object carrier, one that one equipment according to another embodiment comprises at least one lapped face, be arranged in above-mentioned at least one lapped face top is configured to a pivotal point with above-mentioned at least one object carrier to be rotation to load and unload the pivotal point that load plate and is configured to above-mentioned at least one object carrier be that load plate is loaded and unloaded to rotation to transport one second object to second of above-mentioned at least one object carrier to transport one first object to first of above-mentioned at least one object carrier.
One method in order to grind a plurality of objects according to one embodiment of the invention comprises: making an object to be ground is the center rotation with a pivotal point of an object carrier of lapped face top; Above-mentioned object is loaded into above-mentioned object carrier; Move above-mentioned object carrier, so that the object on the above-mentioned object carrier is positioned on the above-mentioned lapped face; And grind object on the above-mentioned lapped face.
One method in order to grind a plurality of objects according to another embodiment comprises that an object to be ground is transported to one loads and unload load plate; Move above-mentioned loading and unload load plate to the one first object carrier; Above-mentioned object is loaded into the above-mentioned first object carrier; Move the above-mentioned first object carrier, so that will be placed at least one lapped face at the object on the above-mentioned first object carrier; And the object of grinding on above-mentioned at least one lapped face.
One method in order to grind a plurality of objects according to another embodiment comprises that making first object to be ground is center rotation and to make second object to be ground be the center rotation with the one second object carrier that is positioned at above-mentioned lapped face top with the one first object carrier that is positioned at lapped face top; Above-mentioned first object is loaded on the above-mentioned first object carrier and above-mentioned second object is loaded on the above-mentioned second object carrier; The individual above-mentioned first and two object carriers that move certainly are so that be positioned over second object on first object on the above-mentioned first object carrier and the above-mentioned second object carrier on the above-mentioned lapped face; And the individual object that grinds certainly on the above-mentioned lapped face.
The present invention compared with prior art has tangible advantage and beneficial effect.Via as can be known above-mentioned, the invention relates to a kind of Apparatus and method for of polishing semiconductor wafers, should be in order to (for example: the one or more load/unload dishes that pivot of Apparatus and method for use semiconductor crystal wafer) to grind object, above-mentioned object be transported to one or more object carriers and/or transport above-mentioned object, to grind above-mentioned object from above-mentioned one or more object carriers.Each load/unload dish that can pivot can be configured in order to above-mentioned object be transported to a single object carrier and/or transport above-mentioned object from above-mentioned single object carrier.In another situation, each load/unload dish that can pivot can be configured in order to above-mentioned object be transported to two object carriers and/or transport above-mentioned object from above-mentioned two object carriers.The above-mentioned load/unload dish that pivots can be configured to that (for example: a grinding pad surface) Shang Fang one or more pivotal points are that the center pivots with at least one lapped face.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the vertical view that comprises the milling apparatus of a grinding unit according to one of one embodiment of the invention.
Fig. 2 is the side view of the grinding unit of Fig. 1.
Fig. 3 is the stereogram of the grinding unit of Fig. 1.
Fig. 4 (a) and Fig. 4 (b) are respectively the vertical view and the stereogram of the grinding unit of Fig. 1, and it shows by the wafer transport process of being implemented in the wafer relay of above-mentioned grinding unit.
Fig. 5 is according to the loading of the above-mentioned wafer relay of one embodiment of the invention and unloads the vertical view of load plate.
Fig. 6 is the loading of Fig. 5 and the profile that unloads load plate.
Fig. 7 (a) and Fig. 7 (b) are above-mentioned loading and the ribbon diagram that unloads load plate, in order to show the order of wafer load to a wafer carrier.
Fig. 8 (a)～Fig. 8 (p) is the continuous stereo figure of the grinding unit of Fig. 2, in order to be presented at the process sequence in the above-mentioned grinding unit.
Fig. 9 is the vertical view according to a grinding unit of the present invention's one alternate embodiment.
Figure 10 is a process chart of handling wafer in the grinding unit of Fig. 9.
Figure 11 is the vertical view according to a grinding unit of the present invention's second alternate embodiment.
Figure 12 is a process chart of handling wafer in the grinding unit of Figure 11.
Figure 13 (a) is the vertical view according to a grinding unit of the present invention's the 3rd alternate embodiment.
Figure 13 (b) is the vertical view of grinding unit under another configuring condition of Figure 13 (a).
Figure 14 (a) is a process chart of handling wafer in the grinding unit of Figure 13 (a) and Figure 13 (b).
Figure 14 (b) is a process chart of handling wafer in the grinding unit of Figure 13 (a) and Figure 13 (b) with an alternative.
Figure 15 (a) is the vertical view according to a grinding unit of the present invention 1 the 4th alternate embodiment.
Figure 15 (b) is the vertical view of grinding unit under another configuring condition of Figure 15 (a).
Figure 16 (a) is a process chart of handling wafer in the grinding unit of Figure 15.
Figure 16 (b) is a process chart of handling wafer in the grinding unit of Figure 15 (a) and Figure 15 (b) with an alternative.
Figure 17 is the vertical view according to a grinding unit of the present invention 1 the 5th alternate embodiment.
Figure 18 (a) is a process chart of handling wafer in the grinding unit of Figure 17.
Figure 18 (b) is a process chart of handling wafer in the grinding unit of Figure 17 with an alternative.
Figure 19 (a) is the vertical view according to a grinding unit of the present invention 1 the 6th alternate embodiment.
Figure 19 (b) is the vertical view of the grinding unit of Figure 19 (a), and the pivotal point that wherein loads and unload load plate is not to be positioned at above-mentioned grinding pad surface.
Figure 20 is a process chart of handling wafer in the grinding unit of Figure 19 (a) and Figure 19 (b).
Figure 21 is the vertical view according to a grinding unit of the present invention 1 the 7th alternate embodiment.
Figure 22 is a process chart of handling wafer in the grinding unit of Figure 21.
Figure 23 is the vertical view according to a grinding unit of the present invention 1 the 8th alternate embodiment.
Figure 24 is a process chart of handling wafer in the grinding unit of Figure 23.
Figure 25 (a) is the vertical view according to a grinding unit of the present invention 1 the 9th alternate embodiment.
Figure 25 (b) is the stereogram of the grinding unit of Figure 25 (a).
Figure 26 is a process chart of handling wafer in the grinding unit of Figure 25 (a) and Figure 25 (b).
Figure 27 (a) is the vertical view according to a grinding unit of the present invention 1 the tenth alternate embodiment.
Figure 27 (b) is the stereogram of double plate wafer relay of the grinding unit of Figure 27 (a).
Figure 28 (a) is a process chart of handling wafer in the grinding unit of Figure 27 (a) with an alternative.
Figure 28 (b) is a process chart of handling wafer in the grinding unit of Figure 27 (a) with a while existing way.
Figure 29 is the vertical view according to a grinding unit of the present invention 1 the 11 alternate embodiment.
Figure 30 is a process chart of handling wafer in the grinding unit of Figure 29.
Figure 31 is the vertical view according to a grinding unit of the present invention 1 the 12 alternate embodiment.
Figure 32 is a process chart of handling wafer in the grinding unit of Figure 31.
Figure 33, Figure 34 (a), Figure 34 (b) and Figure 34 (c) are the vertical views according to the milling apparatus of the present invention one second embodiment.
Figure 35 and Figure 36 are the vertical views according to the milling apparatus of the present invention 1 the 3rd embodiment.
Figure 37 and Figure 38 are the vertical views according to the milling apparatus of the present invention 1 the 4th embodiment.
Figure 39 and Figure 40 are the vertical views according to the milling apparatus of the present invention 1 the 5th embodiment.
Figure 41 and Figure 42 are the vertical views according to the milling apparatus of the present invention 1 the 6th embodiment.
Figure 43 and Figure 44 are the vertical views according to the milling apparatus of the present invention 1 the 7th embodiment.
Figure 45～Figure 47 is the vertical view according to the milling apparatus of the present invention 1 the 8th embodiment.
Figure 48 is the side view of the grinding unit of Fig. 2, and it comprises a plurality of modified wafer relay according to one embodiment of the invention.
Figure 49 is the vertical view of the modified wafer relay of Figure 48.
Figure 50 is the vertical view once modification double plate wafer relay according to one embodiment of the invention.
100: milling apparatus 130: the wafer input station
135: cleaning machine buffered station 136: the grinder buffered station
136 ': the second grinder buffered station 136 ": the 3rd grinder buffered station
140: wafer conveyer 140 ': the second wafer conveyer
140 ": the 3rd wafer conveyer 140 : the 4th wafer conveyer
145,145 ': linear track 145 ", 145 : linear track
150: grinding unit 152: the top casing structure
155,155a, 155b, 155c, 155d: grinding pad
156,156a, 156b, 156c, 156d: grinding table
160a: the first wafer carrier assembly 160b: the second wafer carrier assembly
160c: the 3rd wafer carrier assembly 160d: the 4th wafer carrier assembly
162,162a, 162b, 162c, 162d: wafer carrier
164: carrier axle 166: rotation and vertical drive mechanism
180,181,181x, 181y: wafer relay
180x: the first wafer relay 180y: the second wafer relay
182,182x, 182y: load/unload dish 183,183x, 183y: pivotal arm
184,184x, 184y: pivotal axis 185,185x, 185y: pivotal point
186: pivot and vertical drive mechanism 187: pivot
188: pivot supporter 189: vertical drive mechanism
190: dish pedestal 195: disk ring
200: lifter 202: lifting piston
204: lifter inflator pump 210: wafer disks
More than 250: the second nozzle of more than 240: the first nozzle
260: discharge-channel 270: the first fluid passage
The fluid passage 280 in 272: the second: guard ring
285: vacuum passage 350: cleaning machine wafer conveyer
355: linear track 410: the pad processor
420: 422: the first cleaning stations of wafer cleaning machine
426: the three cleaning stations of 424: the second cleaning stations
428: 432: the first wafer conveyers of drying station
436: the three wafer conveyers of 434: the second wafer conveyers
450: output wafer conveyer 455: linear track
460: the wafer output station
500,520,520a, 520b, 520c, 520d, 540,560,580,580a, 580b, 600,620,640,660,680,700,720: grinding unit
600a: the first grinding unit 600b: second grinding unit
600c: the 3rd grinding unit 600d: the 4th grinding unit
685,586: double plate wafer relay
5000,6000,7000,8000,9000,10000,11000: milling apparatus
A, B, C, D, E: pivoting action K1: primary importance
K2: second place X, Y: stop position
W: wafer W1: first wafer
W2: the second wafer W3: the 3rd wafer
W4: the 4th wafer
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, its specific embodiment of Apparatus and method for, structure, method, step, feature and the effect thereof of the polishing semiconductor wafers that foundation the present invention is proposed, describe in detail as after.
Please refer to shown in Figure 1ly, it describes a milling apparatus 100 according to one embodiment of the invention, and wherein above-mentioned milling apparatus 100 comprises a grinding unit 150.Fig. 1 is the vertical view of above-mentioned milling apparatus 100.Above-mentioned milling apparatus 100 comprises a wafer input station 130, a wafer conveyer 140 and above-mentioned grinding unit 150.
Above-mentioned wafer input station 130 holds semiconductor crystal wafer or other impartial object that will be ground by above-mentioned milling apparatus 100.Above-mentioned wafer input station 130 also can hold the semiconductor crystal wafer that has been ground by above-mentioned milling apparatus 100.Above-mentioned wafer input station 130 also can be configured to comprise a plurality of slits, to hold a plurality of wafers.Above-mentioned wafer conveyer 140 is to be configured to and can to transport wafer at above-mentioned wafer input station 130 and 150 of above-mentioned grinding units.Especially, as following more detailed description, above-mentioned wafer conveyer 140 is to be configured to and can to transport wafer between the load/unload dish 182x of above-mentioned wafer input station 130 and above-mentioned grinding unit 150 and 182y.Above-mentioned wafer conveyer 140 can be arranged on the linear track 145, so that above-mentioned wafer conveyer 140 can be displaced on the above-mentioned linear track 145 with linear mode by a linear driving mechanism (not shown).As an example, above-mentioned wafer conveyer 140 can comprise a mechanical arm, in order to handle the wafer that will transport.Above-mentioned wafer conveyer 140 can further be configured to comprise the double-manipulator arm, so that above-mentioned wafer conveyer can be handled two wafers simultaneously.Above-mentioned wafer conveyer 140 also can be configured to make above-mentioned wafer upset at the transhipment wafer to above-mentioned grinding unit 150 and to above-mentioned wafer input station 130.
Please refer to Fig. 1, Fig. 2 and shown in Figure 3, is to describe above-mentioned grinding unit 150.Fig. 2 is the side view of above-mentioned grinding unit 150, yet Fig. 3 is the stereogram of above-mentioned grinding unit 150.Above-mentioned grinding unit 150 comprises a grinding table 156, one first wafer carrier assembly 160a, one second wafer carrier assembly 160b, one the 3rd wafer carrier assembly 160c, one the 4th wafer carrier assembly 160d, one first wafer relay (first wafer relay device) 180x and one second wafer relay (second wafer relay device) 180y.
Above-mentioned grinding table 156 can one rotates for the center or around (as United States Patent (USP) 5,554,064 is described, and wherein to mention that mode incorporates United States Patent (USP) 5,554 into, 064 in present patent application).At the chemistry and the mechanical lapping processing procedure of semiconductor crystal wafer, a grinding pad 155 can be installed on above-mentioned grinding table 156.Comprise that with one or more (for example: the slurry that grinds KOH) uses with above-mentioned grinding pad 155, with polishing semiconductor wafers for abrasive grains and/or chemicals.For suitable grinding can be arranged, a pad processor (padconditioner) 410 can be in order to improve the surface of above-mentioned grinding pad 155, to upgrade the surface of above-mentioned grinding pad 155 during above-mentioned grinding processing procedure.Though the grinding of wafer described herein is to grind on one or more grinding pads surface, above-mentioned wafer can be at any lapped face (for example: the lapped face of a grinding table) go up grinding.
Each wafer carrier assembly 160 comprises a wafer carrier 162, a carrier axle 164 and a rotation and a vertical drive mechanism 166.Above-mentioned wafer carrier 162 is to be designed in order to gripping the semiconductor wafer, so that the surface of above-mentioned wafer to be ground is in the face of above-mentioned grinding pad 155.Above-mentioned wafer carrier 162 is to be connected to above-mentioned rotation and vertical drive mechanism 166 via above-mentioned carrier axle 164.Above-mentioned rotation and vertical drive mechanism 166 are mounted on a top casing structure (the top housingstructure) 152 of above-mentioned grinding unit 150 (as shown in Figure 2), and wherein above-mentioned top casing structure 152 is to be positioned at above-mentioned grinding table 156 tops.Each rotation and vertical drive mechanism 166 control the rotation of above-mentioned individual wafer carrier 162 via the above-mentioned carrier axle 164 that connects and move both vertically.Therefore, each rotation and vertical drive mechanism 166 are configured to rotate above-mentioned individual wafer carrier and vertically move above-mentioned individual wafer carrier by the vertical mobile above-mentioned carrier axle that connects by the above-mentioned carrier axle 164 that connects of rotation.Can between indivedual abrasion sites on the above-mentioned grinding table 156 and the individual wafer load/unload position above the above-mentioned grinding table 156, move above-mentioned wafer carrier 162 respectively.The position of wafer carrier 161 shown in Figure 2 is the wafer load/unloading positions above above-mentioned grinding table 156.For polishing semiconductor wafers, make above-mentioned wafer carrier 162 to being displaced downwardly to the abrasion site that is positioned on the above-mentioned grinding pad 155, so that the wafer that above-mentioned wafer carrier gripped is depressed on the above-mentioned grinding pad by above-mentioned rotation and vertical drive mechanism 166.
Each wafer relay 180 comprises that a load/unload dish 182, a pivotal arm 183, a pivotal axis 184 and pivot and vertical drive mechanism 186.Above-mentioned load/unload dish 182 is to be connected to above-mentioned pivotal axis 184 via above-mentioned pivotal arm 183.Above-mentioned pivotal axis 184 is to be connected to above-mentioned pivot and vertical drive mechanism 186.Above-mentioned pivot and vertical drive mechanism 186 preferably are mounted to the shell mechanism 152 (as shown in Figure 2) of above-mentioned grinding unit 150.Above-mentioned pivot and vertical drive mechanism 186 control the pivot of above-mentioned load/unload dish 182 via above-mentioned pivotal axis 184 and pivotal arm 183 and move both vertically.Therefore, each pivot and vertical drive mechanism 186 are configured in order to vertically to move above-mentioned indivedual load/unload dishes 182 via the above-mentioned pivotal axis 184 above-mentioned indivedual load/unload dishes 182 of pivot and via the above-mentioned pivotal axis that connects.
In Fig. 1, Fig. 2 and Fig. 3, above-mentioned first and second load/unload dish 182x and 182y position XAnd YBe its indivedual stop positions (parking positions).Above-mentioned load/unload dish 182x and 182y are designed in order to respectively at above-mentioned stop position XAnd YThe last wafer that receives from above-mentioned wafer conveyer 140.The above-mentioned first load/unload dish 182x can be respectively by the pivot motor AAnd BFrom above-mentioned stop position XOne of be switched in wafer load/unloading position of above-mentioned first and second wafer carrier 162a and 162b (as shown in Figures 1 and 2).Similarly, the above-mentioned first load/unload dish 182y can be respectively by the pivot motor CAnd DFrom above-mentioned stop position YOne of be switched in wafer load/unloading position of the above-mentioned the 3rd and the 4th wafer carrier 162c and 162d.
For make when the wafer load/unloading the above-mentioned first load/unload Pan182xShui capablely with above-mentioned first and two wafer carrier 162a and 162b in one of align, the above-mentioned first wafer relay 180x designs in the following manner and places: the distance at the center from the above-mentioned first pivotal axis 184x to the above-mentioned first load/unload dish 182x is to equal the distance at the center from above-mentioned pivotal axis 184x to the above-mentioned first wafer carrier 162a haply and equal the distance at the center of the above-mentioned second wafer carrier 162b extremely from above-mentioned pivotal axis 184x haply.In a similar manner, the above-mentioned second wafer relay 180y designs in the following manner and places: the distance at the center from the above-mentioned second pivotal axis 184y to the above-mentioned second load/unload dish 182y is to equal from the above-mentioned second pivotal axis 184y to the above-mentioned the 3rd and the 4th wafer carrier 162c haply and the distance at the center of 162d.Moreover, in order to load and unload semiconductor crystal wafer, above-mentioned load/unload dish 182x and 182y are vertically alignd on above-mentioned wafer load/unloading position with above-mentioned wafer carrier 162 by moving both vertically of above-mentioned load/unload dish 182.Also can above-mentioned wafer carrier 162 vertically be alignd with above-mentioned load/unload dish 182 by moving both vertically of above-mentioned wafer carrier 162.
Preferably pivotal axis 184x and the 184y with above-mentioned wafer relay 180x and 180y is positioned over above-mentioned grinding pad 155 tops (as shown in Figure 1), and therefore pivotal point 185x and the 185y of above-mentioned load/unload dish 182x and 182y are the surfaces that is positioned at above-mentioned grinding pad 155.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis on the surface that can vertically run through above-mentioned grinding pad 155.In order to make above-mentioned pivotal axis 184x and 184y be arranged at above-mentioned grinding pad 155 tops, above-mentioned pivot and vertical drive mechanism 186 are installed on the top casing structure 152 of above-mentioned grinding unit 150 (as shown in Figure 2).Making the pivotal point 185x of above-mentioned load/unload dish 182x and 182y and 185y be arranged at the significant advantage that above-mentioned grinding pad 155 tops are obtained is: the space surface (footprint) that can reduce above-mentioned grinding unit 150 effectively.Another advantage is: can be by making above-mentioned pivotal axis 184x and 184y be arranged at above-mentioned grinding pad 155 tops to reduce the length of above-mentioned pivotal arm 183x and 183y.In one embodiment, above-mentioned load/unload dish 182x and 182y can directly be connected to above-mentioned pivotal axis 184x and 184y respectively, and do not need above-mentioned pivotal arm 183 and 183y.Have than lacking or not having pivotal arm 183x and 183y, can more stably reach the pivoting action of accurately controlling above-mentioned load/unload dish 182x and 182y.
Please refer to shown in Fig. 4 (a) and Fig. 4 (b), use above-mentioned wafer carrier 162a and above-mentioned wafer relay 180x to describe the operation of above-mentioned wafer relay 180 as example.Fig. 4 (a) is the vertical view of above-mentioned grinding unit 150 when above-mentioned load/unload dish 182x is positioned in above-mentioned wafer load/unloading position, and wherein above-mentioned load/unload dish 182x is positioned over above-mentioned wafer carrier 162a below.Fig. 4 (b) is the stereogram of the grinding unit 150 of Fig. 4 (a).Above-mentioned load/unload dish 182x is at above-mentioned stop position XGo up from above-mentioned wafer conveyer 140 and receive semiconductor wafer (as shown in Figure 3) afterwards, make above-mentioned load/unload dish 182x be switched to wafer load/unloading position of the wafer carrier 162a of above-mentioned grinding table 156 tops.After pivoting, above-mentioned load/unload dish 182x is moved towards above-mentioned wafer carrier 162a with vertical mode, then with above-mentioned wafer load to above-mentioned wafer carrier 162a.After above-mentioned wafer is transported to above-mentioned wafer carrier 162a, above-mentioned load/unload dish 182x is moved down, be pivoted back to above-mentioned stop position then XIn order to unload above-mentioned wafer, above-mentioned load/unload dish 182x is switched on wafer load/unloading position of above-mentioned wafer carrier 162a from above-mentioned wafer carrier 162a.After above-mentioned wafer carrier 162a receives above-mentioned wafer, above-mentioned load/unload dish 182x gets back to above-mentioned stop position X
Please refer to Fig. 5 and shown in Figure 6, is the load/unload dish 182 of describing above-mentioned wafer relay 180, and wherein above-mentioned wafer relay 180 can be above-mentioned wafer relay 180x or above-mentioned wafer relay 180y.Fig. 5 is the vertical view according to the load/unload dish 182 of one embodiment of the invention.Fig. 6 is along Fig. 5 center line OOThe profile of load/unload dish 182.
As shown in Figure 5, above-mentioned load/unload dish 182 can comprise a dish pedestal 190, a disk ring 195, a lifter (lifter) 200, a wafer disks 210, one first many nozzles (nozzles) 240, one second many nozzles 250, a discharge-channel (drain channel) 260, one first fluid passage 270 and one second fluid passages 272.Above-mentioned fluid admittance 270 and 272 can be via above-mentioned pivotal arm 183 and pivotal axis 184 and is connected to the fluid source (not shown).As above-mentioned fluid admittance 270 and 272, above-mentioned discharge-channel 260 can be connected to a discharging pumping (not shown) via above-mentioned pivotal arm 183 and pivotal axis 184.
Above-mentioned disk ring 195 and above-mentioned wafer disks 210 are mounted on the above-mentioned dish pedestal 190.Above-mentioned wafer disks 210 comprises that one is positioned at the hole at its center, so that can make above-mentioned lifter 200 be arranged at the center of above-mentioned dish pedestal 190.Above-mentioned lifter 200 is to be connected to 204 (as shown in Figure 6) of a lifter inflator pump (lifter pneumatic cylinder) via a lifting piston 202.Above-mentioned lifter 200 is wafer operation devices, in order to a wafer risen to a wafer carrier and to fall above-mentioned wafer from above-mentioned wafer carrier.Above-mentioned lifter 200 preferably by soft material (for example: rubber) made, to avoid damaging crystal column surface.Above-mentioned lifter 200 has a surface area less than above-mentioned wafer, and wherein above-mentioned wafer is handled by above-mentioned lifter 200.Above-mentioned lifter inflator pump 204 is to be connected to above-mentioned first fluid passage 270 and is to operate by the fluid of being supplied with through above-mentioned first fluid passage 270.Nitrogen can be in order to the example as above-mentioned fluid.Above-mentioned lifter 200 can be by above-mentioned lifter inflator pump 204 upwards and move down.Above-mentioned lifter 200 is lifted to the top of the upper surface of above-mentioned disk ring 195, to receive a wafer W (as shown in Figure 6) from above-mentioned wafer conveyer 140.After above-mentioned lifter 200 receives above-mentioned wafer W, make above-mentioned lifter 200 to being displaced downwardly to above-mentioned wafer disks 210 belows, so that above-mentioned wafer W is placed on the above-mentioned wafer disks 210.
Above-mentioned more than first nozzle 240 is the tops that are installed on above-mentioned dish pedestal 190, and above-mentioned more than second nozzle 250 is to be mounted to above-mentioned disk ring 195 (as shown in Figure 6).Above-mentioned first and second a plurality of nozzles 240 and 250 are to be connected to above-mentioned second fluid passage 272 and in order to (for example: deionized water) to spray the fluid supplied with via above-mentioned second fluid passage 272.Employed fluid (for example: deionized water) discharge via above-mentioned discharge-channel 260 with above-mentioned emptying pump Pu (not shown).
Please refer to shown in Fig. 7 (a) and Fig. 7 (b), is to describe one in order to a wafer W is loaded into the process sequence on the above-mentioned wafer carrier 162.Fig. 7 (a) and Fig. 7 (b) are the ribbon diagrams of above-mentioned load/unload dish 182.After above-mentioned wafer W is arranged at above-mentioned wafer disks 210 (as before shown in Figure 6), above-mentioned load/unload dish 182 is transported to above-mentioned wafer carrier 162 positions (shown in Fig. 7 (a)).Above-mentioned wafer carrier 162 comprises a guard ring (retaine rring) 280, in order to the above-mentioned wafer of restriction during grinding processing procedure.Next, above-mentioned lifter 200 is moved up, and above-mentioned wafer carrier 162 is received in the wafer on the above-mentioned lifter 200, the vacuum (shown in Fig. 7 (b)) that wherein above-mentioned wafer carrier 162 uses are supplied with via vacuum passage 285.After above-mentioned wafer carrier 162 received above-mentioned wafer, above-mentioned lifter 200 moved down.In order to unload above-mentioned wafer, remove the vacuum that is provided via above-mentioned vacuum passage 285, so that above-mentioned wafer W is released on the lifter 200 of above-mentioned load/unload dish 182 from above-mentioned wafer carrier 162.Above-mentioned load/unload dish 182 can be by spraying deionized water towards above-mentioned wafer carrier 162, to clean above-mentioned wafer carrier 162.
Even if described the ad hoc structure and the wafer load/unloading processing procedure thereof of above-mentioned load/unload dish 182, but can in above-mentioned wafer relay 180, use the device that wafer load to above-mentioned wafer carrier 162 can be reached from any kenel of the above-mentioned wafer of above-mentioned wafer carrier 162 unloadings.
Please refer to shown in Fig. 8 (a)～Fig. 8 (p), is to be described in wafer transhipment on the above-mentioned grinding unit 150 and an example process sequence of grinding.Fig. 8 (a)～Fig. 8 (p) is the continuous stereo figure of above-mentioned grinding unit 150, in order to be presented at above-mentioned process sequence.
In Fig. 8 (a), above-mentioned four wafer carrier 162a, 162b, 162c and 162d are the indivedual load/unload position that are arranged at above-mentioned grinding table 156 tops.Above-mentioned two load/unload dish 182x and 182y are arranged at indivedual stop positions XAnd YMake one first wafer W1 be supplied to the above-mentioned first load/unload dish 182x (as shown by arrows) by above-mentioned wafer conveyer 140 (not being shown in Fig. 8 (a)～Fig. 8 (p)).
In Fig. 8 (b), the wafer load/unloading position with the above-mentioned first load/unload dish 182x is transported to the above-mentioned first wafer carrier 162a is loaded into the above-mentioned first wafer carrier 162a with the above-mentioned first wafer W1 then.
In Fig. 8 (c), above-mentioned stop position is got back in above-mentioned first load/unload dish 182x transhipment X, the above-mentioned then first wafer carrier 162x grinds an above-mentioned wafer W1 on a grinding pad 155, and wherein above-mentioned grinding pad 155 is to be installed on the above-mentioned grinding table 156.When grinding the above-mentioned first wafer W1, one second wafer W2 is supplied to the above-mentioned first load/unload dish 182x (as shown by arrows) by above-mentioned wafer conveyer 140.
Shown in Fig. 8 (d), the wafer load/unloading position with the above-mentioned first load/unload dish 182x is transported to the above-mentioned second wafer carrier 162b is loaded into the above-mentioned second wafer W2 on the above-mentioned second wafer carrier 162b then.Simultaneously, by above-mentioned wafer conveyer 140 one the 3rd wafer W3 is supplied to and is positioned at above-mentioned stop position YOn the second load/unload dish 182y (as shown by arrows).
In Fig. 8 (e), above-mentioned stop position is got back in above-mentioned first load/unload dish 182x transhipment X, the above-mentioned then second wafer carrier 162b grinds the above-mentioned second wafer W2 on above-mentioned grinding pad 155.When grinding above-mentioned one and second wafer, the wafer load/unloading position with the above-mentioned second load/unload dish 182y is transported to above-mentioned the 3rd wafer carrier 162c is loaded into above-mentioned the 3rd wafer carrier 162c with above-mentioned the 3rd wafer W3 then.
In Fig. 8 (f), above-mentioned stop position is got back in above-mentioned second load/unload dish 182y transhipment Y, above-mentioned then the 3rd wafer carrier 162c grinds above-mentioned the 3rd wafer W3 on above-mentioned grinding pad 155.When grinding above-mentioned first, second, third wafer, one the 4th wafer W4 is supplied to above-mentioned load/unload dish 182y (as shown by arrows) by above-mentioned wafer conveyer 140.
At Fig. 8 (g), the wafer load/unloading position with the above-mentioned second load/unload dish 182y is transported to above-mentioned the 4th wafer carrier 162d is loaded into above-mentioned the 4th wafer carrier 162d with above-mentioned the 4th wafer W4 then.
At Fig. 8 (h), the above-mentioned second load/unload dish 182y is transported to above-mentioned stop position Y, above-mentioned then the 4th wafer carrier 162d grinds above-mentioned the 4th wafer W4 on above-mentioned grinding pad 155.
In Fig. 8 (i), after the grinding processing procedure of finishing the above-mentioned first wafer W1, the above-mentioned first wafer carrier 162a is risen from above-mentioned grinding pad 155, above-mentioned wafer load/unloading position is got back in transhipment then.Then, wafer load/unloading position and the above-mentioned first load/unload dish 182x that the above-mentioned first load/unload dish 182x is transported to the above-mentioned first wafer carrier 162a receives the above-mentioned first wafer W1 from the above-mentioned first wafer carrier 162a.
In Fig. 8 (j), above-mentioned stop position is got back in above-mentioned first load/unload dish 182x running X, by above-mentioned wafer conveyer 140 the above-mentioned first wafer W1 is removed (as shown by arrows) from the above-mentioned first load/unload dish 182x then.
In Fig. 8 (k), after the grinding processing procedure of finishing the above-mentioned second wafer W2, the above-mentioned second wafer carrier 162b is risen from above-mentioned grinding pad 155, above-mentioned wafer load/unloading position is got back in transhipment then.The above-mentioned first load/unload dish 182x is transported to wafer load/unloading position of the above-mentioned second wafer carrier 162b, and the above-mentioned then first load/unload dish 182x receives the above-mentioned second wafer W2 from the above-mentioned second wafer carrier 162b.
In Fig. 8 (1), above-mentioned stop position is got back in above-mentioned first load/unload dish 182x running X, by above-mentioned wafer conveyer 140 the above-mentioned second wafer W2 is removed (as shown by arrows) from the above-mentioned first load/unload dish 182x then.
In Fig. 8 (m), after the grinding processing procedure of finishing above-mentioned the 3rd wafer W3, above-mentioned the 3rd wafer carrier 162c is risen from above-mentioned grinding pad 155, above-mentioned wafer load/unloading position is got back in transhipment then.The above-mentioned second load/unload dish 182y is transported to wafer load/unloading position of above-mentioned the 3rd wafer carrier 162c, and the above-mentioned then second load/unload dish 182y receives above-mentioned the 3rd wafer W3 from above-mentioned the 3rd wafer carrier 162c.
In Fig. 8 (n), above-mentioned stop position is got back in above-mentioned second load/unload dish 182y running Y, by above-mentioned wafer conveyer 140 above-mentioned the 3rd wafer W3 is removed (as shown by arrows) from the above-mentioned second load/unload dish 182y then.
In Fig. 8 (o), after the grinding processing procedure of finishing above-mentioned the 4th wafer W4, above-mentioned the 4th wafer carrier 162d is risen from above-mentioned grinding pad 155, above-mentioned wafer load/unloading position is got back in transhipment then.The above-mentioned second load/unload dish 182y is transported to wafer load/unloading position of above-mentioned the 4th wafer carrier 162d, and the above-mentioned then second load/unload dish 182y receives above-mentioned the 4th wafer W4 from above-mentioned the 4th wafer carrier 162d.
In Fig. 8 (p), above-mentioned stop position is got back in above-mentioned second load/unload dish 182y running Y, by above-mentioned wafer conveyer 140 above-mentioned the 4th wafer W4 is removed (as shown by arrows) from the above-mentioned second load/unload dish 182y then.
Even if described, yet also can use other order in above-mentioned grinding unit 150 relevant for the transhipment of above-mentioned grinding unit 150 and an exemplary sequence of polishing semiconductor wafers among Fig. 8 (a)～Fig. 8 (p).For example: the above-mentioned first wafer W1 is being transported to the above-mentioned first wafer carrier 162a (shown in Fig. 8 (b)) afterwards, can the above-mentioned second wafer W2 be transported to the above-mentioned second load/unload dish 182y by above-mentioned wafer conveyer 140, to replace to the above-mentioned first load/unload dish 182x.Then, the above-mentioned second wafer W2 is turned round to above-mentioned the 3rd wafer carrier 162c, on above-mentioned grinding pad 155, grind the above-mentioned second wafer W2 afterwards by the above-mentioned second load/unload dish 182y.Also can the above-mentioned second wafer W2 be transported to above-mentioned four wafer carrier 162d,, on above-mentioned grinding pad 155, grind the above-mentioned second wafer W2 then to replace to above-mentioned the 3rd wafer carrier 162c by the above-mentioned second load/unload dish 182y.Also can be after above-mentioned all wafer carriers 162 load above-mentioned four wafers in regular turn by above-mentioned load/unload dish 182x and 182y, grind above-mentioned four wafers simultaneously by the grinding processing procedure of above-mentioned four wafers of beginning.
Please refer to Fig. 9～shown in Figure 32, is the grinding unit of describing according to a plurality of alternate embodiments of the present invention 500,520,540,560,580,600,620,640,660,680,700 and 720.Fig. 9, Figure 11, Figure 13 (a), Figure 13 (b), Figure 15 (a), Figure 15 (b), Figure 17, Figure 19, Figure 21, Figure 23, Figure 25 (a), Figure 27 (a), Figure 29 and Figure 31 are the vertical views of these grinding units 500,520,540,560,580,600,620,640,660,680,700 and 720.Figure 25 (b) and Figure 27 (b) are respectively the stereograms of the double plate wafer relay of above-mentioned grinding unit 660 and above-mentioned grinding unit 680.Figure 10, Figure 12, Figure 14, Figure 16, Figure 18, Figure 20, Figure 22, Figure 24, Figure 26, Figure 28 (a), Figure 28 (b), Figure 30 (a), Figure 30 (b) and Figure 32 are the flow charts of handling the method for wafer in these grinding units.Any of these grinding unit 500,520,540,560,580,600,620,640,660,680,700 and 720 can be used in the milling apparatus 100 of Fig. 1, to replace above-mentioned grinding unit 150.
In Fig. 9, Figure 11, Figure 13, Figure 15, Figure 17, Figure 19, Figure 21, Figure 23, Figure 25 (a), Figure 27 (a), Figure 29 and Figure 31, describe wafer carrier 162, and do not describe carrier axle 164 and indivedual rotation and vertical drive mechanism 166.Yet above-mentioned grinding unit 500,520,540,560,580,600,620,640,660,680,700 and each wafer carrier 162 of 720 are parts (as described in above-mentioned relevant Fig. 1 and Fig. 2) of a wafer carrier assembly 160.Wafer carrier among these figure 162 is arranged on the individual wafer load/unload position of a single or multiple grinding table 156 tops.In these graphic some are graphic, show wafer relay 180, and show and pivot and vertical drive mechanism 186.Yet the load/unload dish 182 of above-mentioned wafer relay 180 is controlled (as relevant for Figure 1 and Figure 2) by indivedual pivots and vertical drive mechanism 186.Load/unload dish 182 with these in graphic is placed on its indivedual stop positions XAnd YOne wafer conveyer 140 (be not shown in these graphic in) is transported to wafer and is positioned at these stop positions XAnd YOn load/unload dish 182 and from the above-mentioned wafer of above-mentioned load/unload dish 182 transhipments.Above-mentioned load/unload dish 182 is by its indivedual pivoting actions A, B, CAnd DWafer is transported to above-mentioned wafer carrier 162 and transports above-mentioned wafer from above-mentioned wafer carrier 162.Above-mentioned grinding table 156 can its indivedual pivotal points rotates or moves.Also can use one or more pad processors 410 in these grinding units, so that improve the grinding pad that is installed on the above-mentioned grinding table 156.
Please refer to shown in Figure 9ly, it is a grinding unit 500 of describing according to the present invention's one first alternate embodiment.Above-mentioned grinding unit 500 comprises a grinding table 156 with a grinding pad 155, three wafer carrier 162a, 162b and 162c and two wafer relay 180x and 180y.Above-mentioned wafer carrier 162a, 162b and 162c are positioned over above-mentioned grinding table 156 tops with triangular arrangement.That is, place above-mentioned wafer carrier 162a, 162b and 162c, so that these wafer carriers define a triangle haply.The above-mentioned first wafer relay 180x is positioned between above-mentioned first and second wafer carrier 162a and the 162b in following mode: the load/unload dish 182x of the above-mentioned first wafer relay 180x can be respectively by above-mentioned pivoting action AAnd BPivotal point 185x with the surface of above-mentioned grinding pad 155 is wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.The above-mentioned second wafer relay 180y is positioned between above-mentioned second and third wafer carrier 162b and the 162c in following mode: the load/unload dish 182y of the above-mentioned second wafer relay 180y can be respectively by above-mentioned pivoting action CAnd DPivotal point 185y with the surface of above-mentioned grinding pad 155 is wafer load/unloading position that the center is switched to above-mentioned second and third wafer carrier 162b and 162c.Therefore, can be by any load/unload dish among above-mentioned two load/unload dish 182x and the 182y with above-mentioned indivedual pivoting actions BAnd CWafer is transported to the above-mentioned second wafer carrier 162b and transports above-mentioned wafer from the above-mentioned second wafer carrier 162b.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis can vertically run through the surface of above-mentioned grinding pad 155.
Please refer to shown in Figure 10ly, is to describe one in order to handle the method for wafer in above-mentioned grinding unit 500.The method comprises the step described in Figure 10.In step 2000, one first wafer is transported to the above-mentioned first wafer carrier 162a by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned grinding table 156 tops; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2010, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
Next, in step 2020, one second wafer is transported to above-mentioned the 3rd wafer carrier 162c by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) by pivoting action DAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the 3rd wafer carrier 162c of above-mentioned grinding table 156 tops; (3) with above-mentioned second wafer load to above-mentioned the 3rd wafer carrier 162c; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2030, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
Next, in step 2040, one the 3rd wafer is transported to the above-mentioned second wafer carrier 162b by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned the 3rd wafer XOn load/unload dish 182x; (2) above-mentioned load/unload dish 182x is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned grinding table 156 tops by pivoting action B; (3) with above-mentioned the 3rd wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2050, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned the 3rd wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer from above-mentioned grinding table 156 in order, transport above-mentioned wafer by above-mentioned wafer relay 180x and 180y from above-mentioned wafer carrier 162a, 162c and 162b in order then through grinding through grinding.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned three wafer carriers 162, but also can after loading above-mentioned wafer in regular turn by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carriers begin to grind simultaneously above-mentioned wafer.
Please refer to Figure 11, is a grinding unit 520 of describing according to the present invention's one second alternate embodiment.Above-mentioned grinding unit 520 comprises that one has the grinding table 156 of a grinding pad 155, two wafer carrier 162a and 162b and wafer relays 180.Above-mentioned wafer carrier 162a and 162b are positioned over above-mentioned grinding table 156 tops.Above-mentioned wafer relay 180 is to be positioned between above-mentioned wafer carrier 162a and the 162b in following mode: the load/unload dish 182 of above-mentioned wafer relay 180 can be respectively by above-mentioned pivoting action A And BPivotal point 185 with the surface of above-mentioned grinding pad 155 is wafer load/unloading position that the center is switched to above-mentioned wafer carrier 162a and 162b.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis can vertically run through the surface of above-mentioned grinding pad 155.
Please refer to Figure 12, is wafer is handled in description one in above-mentioned grinding unit 520 method.Said method comprises the step that is described among Figure 12.In step 2100, one first wafer is transported to the above-mentioned first wafer carrier 162a by above-mentioned wafer relay 180.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182; (2) above-mentioned load/unload dish 182 is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned grinding table 156 tops by pivoting action A; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182 transhipments XNext, in step 2110, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
Next, in step 2120, one second wafer is transported to the above-mentioned second wafer carrier 162b by above-mentioned wafer relay 180.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer XOn load/unload dish 182; (2) by pivoting action BAbove-mentioned load/unload dish 182 is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned grinding table 156 tops; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182 transhipments XNext, in step 2130, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in order from above-mentioned grinding table 156, transport above-mentioned wafer from above-mentioned wafer carrier 162a and 162b in order by above-mentioned wafer relay 180 then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned two wafer carriers 162, but also can after above-mentioned all wafer carriers load above-mentioned wafer in regular turn by above-mentioned load/unload dish 182, begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 13 (a), is a grinding unit 540 of describing according to one the 3rd alternate embodiment.Above-mentioned grinding unit 540 comprises four grinding table 156a-156d with indivedual grinding pad 155a-155d, four wafer carrier 162a-162d and two wafer relay 180x and 180y.Above-mentioned wafer carrier 162a, 162b, 162c and 162d are arranged at above-mentioned grinding table 156a, 156b, 156c and 156d top respectively and use above-mentioned grinding pad 155a, 155b, 155c and 155d to grind wafer on above-mentioned grinding table 156a, 156b, 156c and 156d.
The above-mentioned first wafer relay 180x is positioned between above-mentioned first and second wafer carrier 162a and the 162b in following mode: the load/unload dish 182x of the above-mentioned first wafer relay 180x can be respectively by above-mentioned pivoting action AAnd BWith above-mentioned pivotal point 185x is wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.The above-mentioned second wafer relay 180y is positioned between the above-mentioned the 3rd and the 4th wafer carrier 162c and the 162d in following mode: the load/unload dish 182y of the above-mentioned second wafer relay 180y can be respectively by above-mentioned pivoting action CAnd DWith above-mentioned pivotal point 185y is wafer load/unloading position that the center is switched to the above-mentioned the 3rd and the 4th wafer carrier 162c and 162d.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis is perpendicular to the surface of above-mentioned grinding pad 155.
In Figure 13 (a), above-mentioned grinding pad 155a-155d furnishes with linear structure.That is, above-mentioned grinding pad 155a-155d is set, so that three grinding pads define a straight line haply.Yet above-mentioned grinding pad 155a-155d can also L shaped structure be provided with (shown in Figure 13 (b)).
Please refer to shown in Figure 14 (a), the method for wafer is handled in description one in above-mentioned grinding unit 540.The method comprises the step that is described among Figure 14 (a).In step 2200, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned first grinding table 156a top; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2210, use above-mentioned grinding pad 155a on above-mentioned grinding table 156a, to grind above-mentioned first wafer.
Next, in step 2220, one second wafer is transported to the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) by pivoting action CAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top; (3) with above-mentioned second wafer load to above-mentioned the 3rd wafer carrier 162c; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2230, use above-mentioned grinding pad 155c on above-mentioned the 3rd grinding table 156c, to grind above-mentioned second wafer.
Next, in step 2240, one the 3rd wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned the 3rd wafer XOn load/unload dish 182x; (2) above-mentioned load/unload dish 182x is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top by pivoting action B; (3) with above-mentioned the 3rd wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2250, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned the 3rd wafer.
Next, in step 2260, one the 4th wafer is transported to the 4th wafer carrier 162d of above-mentioned the 4th grinding table 156d top by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned the 4th wafer YOn load/unload dish 182y; (2) by pivoting action DAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the 4th wafer carrier 162d of above-mentioned the 4th grinding table 156d top; (3) with above-mentioned the 4th wafer load to above-mentioned the 4th wafer carrier 162d; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2270, use above-mentioned grinding pad 155d on above-mentioned the 4th grinding table 156d, to grind above-mentioned the 4th wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in regular turn from above-mentioned indivedual grinding table 156a, 156b, 156c and 156d, transport above-mentioned wafer from above-mentioned wafer carrier 162a, 162b, 162c and 162d in regular turn by above-mentioned wafer relay 180x and 180y then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned four wafer carriers 162, but also can after loading above-mentioned wafer in regular turn by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carriers begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 14 (b), be described in an alternative method of handling wafer in the above-mentioned grinding unit 540.The method comprises the described step of Figure 14 (b).In step 2205, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the above-mentioned first wafer relay 180x.Next, in step 2215, use above-mentioned grinding pad 155a on the above-mentioned first grinding table 156a, to grind above-mentioned first wafer.Can use one first kind to grind slurry and on the above-mentioned first grinding table 156a, grind above-mentioned first wafer.
Next, in step 2225, one second wafer is transported to the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top by the above-mentioned second wafer relay 180y.Next, in step 2235, use above-mentioned grinding pad 155c on above-mentioned the 3rd grinding table 156c, to grind above-mentioned second wafer.Can use above-mentioned first kind to grind slurry and on above-mentioned the 3rd grinding table 156c, grind above-mentioned second wafer.
Next, in step 2245, above-mentioned first wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the above-mentioned first wafer relay 180x from the above-mentioned first wafer carrier 162a.This step comprises step following time: (1) by the pivoting action A with above-mentioned load/unload dish 182x from its stop position XBe transported to wafer load/unloading position of the above-mentioned first wafer carrier 162a; (2) from the above-mentioned first wafer carrier 162a with above-mentioned first wafer unload to above-mentioned load/unload dish 182x; (3) by pivoting action AAnd BAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (4) with above-mentioned first wafer load to the above-mentioned second wafer carrier 162b; And (5) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2255, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned first wafer.Can use one second kind to grind slurry and on the above-mentioned second grinding table 156b, grind above-mentioned first wafer.
Next, in step 2265, above-mentioned second wafer is transported to the 4th wafer carrier 162d of above-mentioned the 4th grinding table 156d top by the above-mentioned second wafer relay 180y from above-mentioned the 3rd wafer carrier 162c.This step comprises step following time: (1) is by pivoting action CWith above-mentioned load/unload dish 182y from its stop position YBe transported to wafer load/unloading position of above-mentioned the 3rd wafer carrier 162c; (2) from above-mentioned the 3rd wafer carrier 162c with above-mentioned second wafer unload to above-mentioned load/unload dish 182y; (3) by pivoting action CAnd DAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the 4th wafer carrier 162d of above-mentioned the 4th grinding table 156d top; (4) with above-mentioned second wafer load to above-mentioned the 4th wafer carrier 162d; And (5) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2275, use above-mentioned grinding pad 155d on above-mentioned the 4th grinding table 156d, to grind above-mentioned second wafer.Can use above-mentioned second kind to grind slurry and on above-mentioned the 4th grinding table 156d, grind above-mentioned second wafer.
On the above-mentioned second and the 4th grinding table 156b and 156d, grind after above-mentioned first and second wafer respectively, rise above-mentioned wafer from above-mentioned indivedual grinding table 156b and 156d in order, transport above-mentioned wafer from above-mentioned wafer carrier 162b and 162d in regular turn by above-mentioned wafer relay 180x and 180y respectively then.
Even if described the continuously grinding processing procedure of above-mentioned first and second wafer that uses above-mentioned four wafer carrier 162a, 162b, 162c and 162d, but also can after loading above-mentioned wafer in regular turn by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carrier 162a and 162c or 162b and 162d begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 15 (a), describe a grinding unit 560 according to one the 4th alternate embodiment.Above-mentioned grinding unit 560 comprises three grinding table 156a-156c with indivedual grinding pad 155a-155c, three wafer carrier 162a-162c and two wafer relay 180x and 180y.Above-mentioned wafer carrier 162a, 162b and 162c are positioned over above-mentioned grinding table 156a, 156b and 156c respectively, and use above-mentioned grinding pad 155a, 155b and 155c to grind above-mentioned wafer respectively on above-mentioned grinding table 156a, 156b and 156c.
The above-mentioned first wafer relay 180x is positioned between above-mentioned first and second wafer carrier 162a and the 162b in following mode: the load/unload dish 182x of the above-mentioned first wafer relay 180x can be respectively by above-mentioned pivoting action AAnd BWith above-mentioned pivotal point 185x is wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.The above-mentioned second wafer relay 180y is positioned between above-mentioned second and third wafer carrier 162b and the 162c in following mode: the load/unload dish 182y of the above-mentioned second wafer relay 180y can be respectively by above-mentioned pivoting action CAnd DWith above-mentioned pivotal point 185y is wafer load/unloading position that the center is switched to above-mentioned second and third wafer carrier 162b and 162c.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis is perpendicular to the surface of above-mentioned grinding pad 155.
In Figure 15 (a), above-mentioned grinding pad 155a-155c furnishes with a linear structure.That is, place above-mentioned grinding pad 155a-155c, so that these grinding pads define a straight line haply.Yet above-mentioned grinding pad 155a-155c can a triangular structure be provided with (as described in Figure 15 (b)).
Please refer to shown in Figure 16 (a), the method for semiconductor crystal wafer is handled in description one in above-mentioned grinding unit 560.The method comprises the described step of Figure 16 (a).In step 2300, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned first grinding table 156a top; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2310, use above-mentioned grinding pad 155a on above-mentioned grinding table 156a, to grind above-mentioned first wafer.
Next, in step 2320, one second wafer is transported to the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) by pivoting action DAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top; (3) with above-mentioned second wafer load to above-mentioned the 3rd wafer carrier 162c; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2330, use above-mentioned grinding pad 155c on above-mentioned the 3rd grinding table 156c, to grind above-mentioned second wafer.
Next, in step 2340, one the 3rd wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned the 3rd wafer XOn load/unload dish 182x; (2) by pivoting action BAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (3) with above-mentioned the 3rd wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2350, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned the 3rd wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in regular turn from above-mentioned grinding table 156, transport above-mentioned wafer from above-mentioned wafer carrier 162a, 162b and 162c in regular turn by above-mentioned wafer relay 180x and 180y then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned three wafer carriers 162, but also can after loading above-mentioned wafer in regular turn by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carriers begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 16 (b), be described in an alternative method of handling wafer in the above-mentioned grinding unit 560.The method comprises the described step of Figure 16 (b).In step 2305, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the above-mentioned first wafer relay 180x.Next, in step 2315, use above-mentioned grinding pad 155a on the above-mentioned first grinding table 156a, to grind above-mentioned first wafer.Can use one first kind to grind slurry and on the above-mentioned first grinding table 156a, grind above-mentioned first wafer.
Next, in step 2325, one second wafer is transported to the 3rd wafer carrier 162c of above-mentioned the 3rd grinding table 156c top by the above-mentioned second wafer relay 180y.Next, in step 2335, use above-mentioned grinding pad 155c on above-mentioned the 3rd grinding table 156c, to grind above-mentioned second wafer.Can use above-mentioned first kind to grind slurry and on above-mentioned the 3rd grinding table 156c, grind above-mentioned second wafer.
Next, in step 2345, above-mentioned first wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the above-mentioned first wafer relay 180x from the above-mentioned first wafer carrier 162a.This step comprises step following time: (1) is by pivoting action AWith above-mentioned load/unload dish 182x from its stop position XBe transported to wafer load/unloading position of the above-mentioned first wafer carrier 162a; (2) from the above-mentioned first wafer carrier 162a with above-mentioned first wafer unload to above-mentioned load/unload dish 182x; (3) by pivoting action AAnd BAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (4) with above-mentioned first wafer load to the above-mentioned second wafer carrier 162b; And (5) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2355, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned first wafer.Can use one second kind to grind slurry and on the above-mentioned second grinding table 156b, grind above-mentioned first wafer.On the above-mentioned second grinding table 156b, grind after above-mentioned first wafer, in step 2365, transport above-mentioned first wafer from the above-mentioned second wafer carrier 162b by the above-mentioned first wafer relay 180x.
Next, in step 2375, above-mentioned second wafer is transported to the second wafer carrier 162b of above-mentioned the 4th grinding table 156d top by the above-mentioned second wafer relay 180y from above-mentioned the 3rd wafer carrier 162c.This step comprises step following time: (1) by the pivoting action C with above-mentioned load/unload dish 182y from its stop position YBe transported to wafer load/unloading position of above-mentioned the 3rd wafer carrier 162c; (2) from above-mentioned the 3rd wafer carrier 162c with above-mentioned second wafer unload to above-mentioned load/unload dish 182y; (3) by pivoting action CAnd DAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (4) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (5) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2385, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned second wafer.Can use above-mentioned second kind to grind slurry and on the above-mentioned second grinding table 156b, grind above-mentioned second wafer.
On the above-mentioned second grinding table 156b, grind after above-mentioned second wafer, rise above-mentioned wafer, transport above-mentioned second wafer by the above-mentioned second wafer relay 180y from above-mentioned wafer carrier 162b then from above-mentioned grinding table 156b.
Even if described the continuously grinding processing procedure of above-mentioned first and second wafer that uses above-mentioned four wafer carrier 162a, 162b, 162c and 162d, but also can after loading above-mentioned wafer in regular turn by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carrier 162a and 162c or 162b and 162d begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 17ly, is a grinding unit 580 of describing according to one the 5th alternate embodiment.Above-mentioned grinding unit 580 comprises two grinding table 156a with indivedual grinding pad 155a and 155b and 156b, two wafer carrier 162a and a 162b and a wafer relay 180.Above-mentioned wafer carrier 162a and 162 is the tops that are positioned over above-mentioned grinding table 156a and 156 respectively, and uses above-mentioned grinding pad 155a and 155b to grind wafer respectively on above-mentioned grinding table 156a and 156b.
Above-mentioned wafer relay 180 is to be positioned in the following manner between above-mentioned first and second wafer carrier 162a and the 162b: the load/unload dish 182 of above-mentioned wafer relay 180 can be respectively by above-mentioned pivoting action AAnd BWith above-mentioned pivotal point 185 is wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis is perpendicular to the surface of above-mentioned grinding pad 155.
Please refer to shown in Figure 18 (a), the method for semiconductor crystal wafer is handled in description one in above-mentioned grinding unit 580.The method comprises the described step of Figure 18 (a).In step 2400, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by above-mentioned wafer relay 180.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182; (2) by pivoting action AAbove-mentioned load/unload dish 182 is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned first grinding table 156a top; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182 transhipments XNext, in step 2410, use above-mentioned grinding pad 155a on above-mentioned grinding table 156a, to grind above-mentioned first wafer.
Next, in step 2420, one second wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by above-mentioned wafer relay 180.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer XOn load/unload dish 182; (2) by pivoting action BAbove-mentioned load/unload dish 182 is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position X with above-mentioned load/unload dish 182 transhipments.Next, in step 2430, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in regular turn from above-mentioned grinding table 156a and 156b, transport above-mentioned wafer from above-mentioned wafer carrier 162a and 162b in regular turn by above-mentioned wafer relay 180 then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned two wafer carriers 162, but also can after above-mentioned all wafer carriers load above-mentioned wafer in regular turn by above-mentioned load/unload dish 182, begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 18 (b), be described in an alternative method of handling wafer in the above-mentioned grinding unit 580.The method comprises the described step of Figure 18 (b).In step 2405, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by above-mentioned wafer relay 180.Next, in step 2415, use above-mentioned grinding pad 155a on the above-mentioned first grinding table 156a, to grind above-mentioned first wafer.Can use one first kind to grind slurry and on the above-mentioned first grinding table 156a, grind above-mentioned first wafer.
Next, in step 2425, above-mentioned first wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by above-mentioned wafer relay 180 from the above-mentioned first wafer carrier 162a.This step comprises step following time: (1) is by pivoting action AWith above-mentioned load/unload dish 182 from its stop position XBe transported to wafer load/unloading position of the above-mentioned first wafer carrier 162a; (2) from the above-mentioned first wafer carrier 162a with above-mentioned first wafer unload to above-mentioned load/unload dish 182; (3) by pivoting action AAnd BAbove-mentioned load/unload dish 182 is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (4) with above-mentioned first wafer load to the above-mentioned second wafer carrier 162b; And (5) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2435, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned first wafer.Can use one second kind to grind slurry and on the above-mentioned second grinding table 156b, grind above-mentioned first wafer.
On the above-mentioned second grinding table 156b, grind after above-mentioned first wafer, rise above-mentioned wafer, transport above-mentioned second wafer by above-mentioned wafer relay 180 from above-mentioned wafer carrier 162b then from above-mentioned grinding table 156b.
Please refer to shown in Figure 19 (a), is a grinding unit 600 of describing according to one the 6th alternate embodiment.Above-mentioned grinding unit 600 comprises a grinding table 156 with a grinding pad 155, two wafer carrier 162a and 162b and two wafer relay 180x and 180y.Above-mentioned wafer carrier 162a and 162b are positioned over above-mentioned grinding table 156 tops, and use above-mentioned grinding pad 155 to grind wafer on above-mentioned grinding table 156.Above-mentioned first and second load/unload dish 182x and 182y are arranged in order to respectively wafer be transported to above-mentioned first and second wafer carrier 162a and 162b and transport above-mentioned wafer from above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned first and second wafer relay 180x and 180y can be respectively by above-mentioned pivoting actions A And BPivotal point 185x and 185y with the surface that is positioned at above-mentioned grinding pad 155 are wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis is the surface of vertically running through above-mentioned grinding pad 155.
In Figure 19 (b), be an alternate embodiment that shows the grinding unit 600 of Figure 19 (a).Because pivotal point 185x and the 185y of above-mentioned first and second load/unload dish 182x and 182y are not the surface that is positioned at above-mentioned grinding pad 155, so the grinding unit 600 of Figure 19 (b) is the grinding units that are different from Figure 19 (a).Yet the grinding unit 600 of Figure 19 (b) is to operate in the mode of the grinding unit 600 that is same as Figure 19 (a).
Please refer to shown in Figure 20ly, is to describe a method of handling semiconductor crystal wafer in above-mentioned grinding unit 600.The method comprises the step described in Figure 20.In step 2500, one first wafer is transported to the first wafer carrier 162a of above-mentioned grinding table 156 tops by above-mentioned wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned grinding table 156 tops; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2510, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
Next, in step 2520, one second wafer is transported to the second wafer carrier 162b of above-mentioned grinding table 156 tops by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) above-mentioned load/unload dish 182y is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned grinding table 156 tops by pivoting action B; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2530, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer from above-mentioned grinding table 156 in order, transport above-mentioned wafer by above-mentioned wafer relay 180x and 180y from above-mentioned wafer carrier 162a and 162b in regular turn respectively then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned two wafer carrier 162a and 162b, but also can after loading above-mentioned wafer in regular turn or simultaneously by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carriers begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 21ly, is a grinding unit 620 of describing according to one the 7th alternate embodiment.Above-mentioned grinding unit 620 comprises two grinding table 156a with indivedual grinding pad 155a and 155b and 156b, two wafer carrier 162a and 162b and two wafer relay 180x and 180y.Above-mentioned wafer carrier 162a and 162b are positioned over above-mentioned grinding table 156a and 156b top respectively, and use above-mentioned grinding pad 155a and 155b to grind wafer on above-mentioned grinding table 156a and 156b respectively.Above-mentioned first and second load/unload dish 182x and 182y are transported to wafer above-mentioned first and second wafer carrier 162a and 162b respectively and transport above-mentioned wafer from above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned first and second load/unload dish 182x and 182y can be respectively by above-mentioned pivoting actions AAnd BWith above-mentioned pivotal point 185x and 185y is wafer load/unloading position that the center is switched to above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis is perpendicular to the surface of above-mentioned grinding pad 155.
Please refer to shown in Figure 22ly, is to describe a method of handling semiconductor crystal wafer in above-mentioned grinding unit 620.The method comprises the step described in Figure 22.In step 2600, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned first grinding table 156a top; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2610, use above-mentioned grinding pad 155a on the above-mentioned first grinding table 156a, to grind above-mentioned first wafer.
Next, in step 2620, one second wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the above-mentioned second wafer relay 180y.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) by pivoting action BAbove-mentioned load/unload dish 182y is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2630, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer from above-mentioned grinding table 156a and 156b in order, transport above-mentioned wafer by above-mentioned wafer relay 180x and 180y from above-mentioned wafer carrier 162a and 162b in regular turn respectively then.
Even if described the continuously grinding processing procedure of the above-mentioned wafer that uses above-mentioned two wafer carriers 162, but also can after loading above-mentioned wafer in regular turn or simultaneously by above-mentioned load/unload dish 182x and 182y, above-mentioned all wafer carriers begin to grind simultaneously above-mentioned wafer.
Please refer to shown in Figure 23ly, is a grinding unit 640 of describing according to one the 8th alternate embodiment.Above-mentioned grinding unit 640 comprises a grinding table 156 with a grinding pad 155, a wafer carrier 162 and two wafer relay 180x and 180y.Above-mentioned first and second wafer relay 180x and 180y are transported to wafer above-mentioned wafer carrier 162 and transport above-mentioned wafer from above-mentioned wafer carrier 162 with an alternative.Above-mentioned first and second load/unload dish 182x and 182y can be respectively by above-mentioned pivoting actions AAnd BWith above-mentioned pivotal point 185x and 185y is wafer load/unloading position that the center is switched to above-mentioned wafer carrier 162.Above-mentioned pivotal point 185x and 185y are positioned on the pivotal axis, and wherein above-mentioned pivotal axis is the surface of vertically running through above-mentioned grinding pad 155.
Please refer to shown in Figure 24ly, is to describe a method of handling semiconductor crystal wafer in above-mentioned grinding unit 640.The method comprises the step described in Figure 24.In step 2700, one first wafer is transported to the wafer carrier 162 of above-mentioned grinding table 156 tops by above-mentioned wafer relay 180x.This step comprises step following time: (1) is positioned over load/unload dish 182x on the stop position X with above-mentioned first wafer; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops; (3) with above-mentioned first wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2710, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
Next, in step 2720, after finishing the grinding processing procedure of above-mentioned first wafer, rise above-mentioned wafer carrier 162 from above-mentioned grinding table 156, the load/unload dish 182x by the above-mentioned first wafer relay 180x removes above-mentioned first wafer from above-mentioned wafer carrier 162 then.Next, in step 2730, by the load/unload dish 182y of the above-mentioned second wafer relay 180y with pivoting action BOne second wafer is transported to above-mentioned wafer carrier 162.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) above-mentioned load/unload dish 182y is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops by pivoting action B; (3) with above-mentioned second wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 2740, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
In a modified embodiment, step 2720 and 2730 is to replace with step 2725 and 2735.In this embodiment, in step 2725, after finishing the grinding processing procedure of above-mentioned first wafer, rise above-mentioned wafer carrier 162 from above-mentioned grinding table 156, the load/unload dish 182y by the above-mentioned second wafer relay 180y removes above-mentioned first wafer from above-mentioned wafer carrier 162 then.
Next, in step 2735, one second wafer is transported to above-mentioned wafer carrier 162 by the load/unload dish 182x of the above-mentioned first wafer relay 180x.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops; (3) with above-mentioned second wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XThen, in step 2740, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
Please refer to shown in Figure 25 (a) and Figure 25 (b), is a grinding unit 660 of describing according to one the 9th alternate embodiment.Figure 25 (a) and Figure 25 (b) are respectively the vertical view and the stereogram of above-mentioned grinding unit 660.Above-mentioned grinding unit 660 comprises a grinding table 156, a wafer carrier 162 and the wafer relay 180 with a grinding pad 155.Above-mentioned wafer relay 180 is transported to wafer above-mentioned wafer carrier 162 and transports above-mentioned wafer from above-mentioned wafer carrier 162.Above-mentioned load/unload dish 182 is by above-mentioned pivoting action AWith above-mentioned pivotal point 185 is wafer load/unloading position that the center is switched to above-mentioned wafer carrier 162.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis is the surface of vertically running through above-mentioned grinding pad 155.Above-mentioned pivoting action ABe further to describe with the dotted line among Figure 25 (b).Above-mentioned wafer relay 180 is to be designed to be installed in the above-mentioned grinding unit 660, so as the pivotal axis of above-mentioned wafer relay 180 184 preferably with the stop position of above-mentioned load/unload dish 182 XBe arranged on above-mentioned grinding table 156 tops.By this structure, can reduce the stop position of above-mentioned wafer carrier 162 XAnd the pivoting action of the above-mentioned load/unload dish 182 between above-mentioned wafer load/unloading position AScope, therefore can minimize the plane space of above-mentioned grinding unit 660.In order further to reduce above-mentioned pivoting action AScope, can make above-mentioned load/unload dish 182 be connected directly to above-mentioned pivotal axis 184, and not need above-mentioned pivotal arm 183.
Please refer to shown in Figure 26ly, is the method that is described in the processing semiconductor crystal wafer in the above-mentioned grinding unit 660.Said method comprises the described step of Figure 26.In step 2800, one first wafer is placed on stop position XOn the load/unload dish 182 of wafer relay 180, above-mentioned stop position XPreferably be positioned at above-mentioned grinding table 156 tops.
Next, in step 2810, by the pivoting action of above-mentioned load/unload dish 182 AAbove-mentioned first wafer is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops.Next, in step 2820, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
After finishing the grinding processing procedure of an above-mentioned wafer, above-mentioned wafer is risen from above-mentioned grinding table 156, transport above-mentioned wafer by above-mentioned wafer relay 180 from above-mentioned wafer carrier 162 then.
Please refer to shown in Figure 27 (a) and Figure 27 (b), is a grinding unit 680 of describing according to 1 the tenth alternate embodiment.Figure 27 (a) is the vertical view of above-mentioned grinding unit 680.Figure 27 (b) is the stereogram of a double plate wafer relay 685 of above-mentioned units polish 680.Above-mentioned grinding unit 680 comprises that one has the grinding table 156 of a grinding pad, two wafer carrier 162a and 162b and above-mentioned double plate wafer relays 685.
Above-mentioned double plate wafer relay 685 comprises two load/unload dish 182x and 182y, and wherein above-mentioned load/unload dish 182x and 182y are via indivedual pivotal arm 183x and 183y and be connected to a pivotal axis 184.Above-mentioned pivotal axis 184 is to be controlled by a pivot and vertical drive mechanism 186.Above-mentioned first and second load/unload dish 182x and 182y can be by above-mentioned pivoting actions EWith a pivotal point 185 is wafer load/unloading position that the center is switched to above-mentioned wafer carrier 162a and 162b respectively, and wherein above-mentioned pivotal point 185 is the surfaces that are positioned at above-mentioned grinding pad 155.Therefore, above-mentioned double plate wafer relay 685 can be transported to two wafers above-mentioned first and second wafer carrier 162a and 162b simultaneously or transport above-mentioned two wafers from above-mentioned first and second wafer carrier 162a and 162b.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis is the surface of vertically running through above-mentioned grinding pad 155.In a modified embodiment, the above-mentioned first load/unload dish 182x can be by above-mentioned pivoting action AWafer is transported to the above-mentioned first wafer carrier 162a and transports above-mentioned wafer from the above-mentioned first wafer carrier 162a, and the above-mentioned second load/unload dish 182y can be by above-mentioned pivoting action BWafer is transported to the above-mentioned second wafer carrier 162b and transports above-mentioned wafer from the above-mentioned first wafer carrier 162b.
Please refer to shown in Figure 28 (a) and Figure 28 (b), is to be described in the above-mentioned grinding unit 680 method of handling semiconductor crystal wafer with mode simultaneous system in turn respectively.
Above-mentioned mode in turn comprises the described step of Figure 28 (a).In step 2900, one first wafer is transported to the first wafer carrier 162a of above-mentioned grinding table 156 tops by the first load/unload dish 182x of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn the first load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned grinding table 156 tops; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 2910, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
In step 2920, one second wafer is transported to the second wafer carrier 162b of above-mentioned grinding table 156 tops by the second load/unload dish 182y of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn the second load/unload dish 182y; (2) above-mentioned load/unload dish 182y is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned grinding table 156 tops by pivoting action B; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned second load/unload dish 182y transhipment YNext, in step 2930, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in regular turn from above-mentioned grinding table 156, load/unload dish 182x and the 182y by above-mentioned double plate wafer relay 685 transports above-mentioned wafer from above-mentioned wafer carrier 162a and 162b respectively in regular turn then.
Above-mentioned simultaneous system comprises the described step of Figure 28 (b).In step 3000, simultaneously two wafers are transported to above-mentioned two wafer carrier 162a and 162y by first and second load/unload dish 182x and the 182y of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned two wafers XAnd YOn first and second load/unload dish 182x and 182y; (2) by pivoting action E above-mentioned first and second load/unload dish 182x and 182y are transported to first and second wafer carrier 162a of above-mentioned grinding table 156 tops and wafer load/unloading position of 162b; (3) with above-mentioned two wafer load to above-mentioned first and second wafer carrier 162a and 162b; And (4) get back to its stop position with above-mentioned first and second load/unload dish 182x and 182y transhipment XAnd YNext, in step 3010, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned two wafers.
Next, in step 3020, after finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer from above-mentioned grinding table 156, then by the load/unload dish 182x of above-mentioned double plate wafer relay 685 and 182y with above-mentioned pivoting action ETransport above-mentioned wafer from above-mentioned wafer carrier 162a and 162b simultaneously.
Please refer to shown in Figure 29ly, is a grinding unit 700 of describing according to 1 the 11 alternate embodiment.Above-mentioned grinding unit 700 comprises that two grinding table 156a with indivedual grinding pad 155a and 155b and 156b, two wafers carry 162a and 162b and double plate wafer relays 685.Above-mentioned wafer carrier 162a and 162b are positioned over above-mentioned grinding table 156a and 156b top respectively.
Above-mentioned first and second load/unload dish 182x and 182y can be wafer load/unloading position that the center is switched to above-mentioned wafer carrier 162a and 162b respectively with above-mentioned pivotal point 185 by above-mentioned pivoting action E.Therefore, above-mentioned double plate wafer relay 685 can be transported to above-mentioned first and second wafer carrier 162a and 162b with two wafers simultaneously.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis is perpendicular to the surface of above-mentioned grinding pad 155.In a modified embodiment, the above-mentioned first load/unload dish 182x can be by above-mentioned pivoting action AWafer is transported to the above-mentioned first wafer carrier 162a and transports above-mentioned wafer from the above-mentioned first wafer carrier 162a, and the above-mentioned second load/unload dish 182y can be by above-mentioned pivoting action BWafer is transported to the above-mentioned second wafer carrier 162b and transports above-mentioned wafer from the above-mentioned second wafer carrier 162b.
Please refer to shown in Figure 30 (a) and Figure 30 (b), is to be described in the above-mentioned grinding unit 700 methods of handling semiconductor crystal wafer respectively with above-mentioned mode in turn and simultaneous system.
Above-mentioned mode in turn comprises the described step of Figure 30 (a).In step 3100, one first wafer is transported to the first wafer carrier 162a of above-mentioned first grinding table 156a top by the first load/unload dish 182x of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn the first load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to wafer load/unloading position of the first wafer carrier 162a of above-mentioned first grinding table 156a top; (3) with above-mentioned first wafer load to the above-mentioned first wafer carrier 162a; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 3110, use above-mentioned grinding pad 155a on the above-mentioned first grinding table 156a, to grind above-mentioned first wafer.
In step 3120, one second wafer is transported to the second wafer carrier 162b of above-mentioned second grinding table 156b top by the second load/unload dish 182y of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn the second load/unload dish 182y; (2) by pivoting action BThe above-mentioned second load/unload dish 182y is transported to wafer load/unloading position of the second wafer carrier 162b of above-mentioned second grinding table 156b top; (3) with above-mentioned second wafer load to the above-mentioned second wafer carrier 162b; And (4) get back to its stop position with above-mentioned second load/unload dish 182y transhipment YNext, in step 3130, use above-mentioned grinding pad 155b on the above-mentioned second grinding table 156b, to grind above-mentioned second wafer.
After finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer in regular turn from above-mentioned grinding table 156a and 156b, load/unload dish 182x and the 182y by above-mentioned double plate wafer relay 685 transports above-mentioned wafer from above-mentioned wafer carrier 162a and 162b respectively in regular turn then.
Above-mentioned simultaneous system comprises the described step of Figure 30 (b).In step 3200, simultaneously two wafers are transported to above-mentioned two wafer carrier 162a and 162y by first and second load/unload dish 182x and the 182y of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned two wafers XAnd YOn first and second load/unload dish 182x and 182y; (2) by pivoting action EAbove-mentioned first and second load/unload dish 182x and 182y are transported to above-mentioned first and second grinding table 156a and first and second wafer carrier 162a of 156b top and wafer load/unloading position of 162b; (3) with above-mentioned two wafer load to above-mentioned first and second wafer carrier 162a and 162b; And (4) get back to its indivedual stop positions with above-mentioned first and second load/unload dish 182x and 182y transhipment XAnd YNext, in step 3210, use above-mentioned grinding pad 155a and 155b on above-mentioned indivedual grinding table 156a and 156b, to grind above-mentioned two wafers.
Next, in step 3220, after finishing the grinding processing procedure of above-mentioned wafer, rise above-mentioned wafer from above-mentioned grinding table 156a and 156b, load/unload dish 182x and the 182y by above-mentioned double plate wafer relay 685 transports above-mentioned wafer from above-mentioned wafer carrier 162a and 162b simultaneously then.
Please refer to shown in Figure 31ly, is a grinding unit 720 of describing according to 1 the 12 alternate embodiment.Above-mentioned grinding unit 720 comprises that one has grinding table 156, a wafer carrier 162 and a double plate wafer relay 685 of a grinding pad 155.Each load/unload dish of the load/unload dish 182x of above-mentioned double plate wafer relay 685 and 182y can one in turn mode by above-mentioned pivoting action A And BPivotal point 185 with the surface of above-mentioned grinding pad 155 is that the center pivots, wafer is transported to above-mentioned wafer carrier 162.Above-mentioned pivotal point 185 is to be positioned on the pivotal axis, and wherein above-mentioned pivotal axis is the surface of vertically running through above-mentioned grinding pad 155.In a modified embodiment, can use the above-mentioned first load/unload dish 182x, with above-mentioned pivoting action AWafer is transported to above-mentioned wafer carrier 162, and can uses the above-mentioned second load/unload dish 182y, with above-mentioned pivoting action BFrom above-mentioned wafer carrier 162 transhipment wafers.
Please refer to shown in Figure 32ly, is to describe a method of handling semiconductor crystal wafer in above-mentioned grinding unit 720.The method comprises the step described in Figure 32.In step 3300, one first wafer is transported to the wafer carrier 162 of above-mentioned grinding table 156 tops by the first load/unload dish 182x of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned first wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops; (3) with above-mentioned first wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XNext, in step 3310, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned first wafer.
Next, in step 3320, after finishing the grinding processing procedure of above-mentioned first wafer, rise above-mentioned wafer carrier 162 from above-mentioned grinding table 156, the first load/unload dish 182x by above-mentioned double plate wafer relay 685 removes above-mentioned first wafer from above-mentioned wafer carrier 162 then.
In step 3330, by the pivoting action of the second load/unload dish 182y of above-mentioned double plate wafer relay 685 BOne second wafer is transported to above-mentioned wafer carrier 162.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer YOn load/unload dish 182y; (2) by pivoting action BAbove-mentioned load/unload dish 182y is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops; (3) with above-mentioned second wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182y transhipment YNext, in step 3340, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
In a modified embodiment, step 3320 and 3330 replaces with step 3325 and 3335, in the step 3325 of this embodiment, after finishing the grinding processing procedure of above-mentioned first wafer, rise above-mentioned wafer carrier 162 from above-mentioned grinding table 156, the second load/unload dish 182y by above-mentioned double plate wafer relay 685 removes above-mentioned first wafer from above-mentioned wafer carrier 162 then.
Next, in step 3335, one second wafer is transported to above-mentioned wafer carrier 162 by the first load/unload dish 182x of above-mentioned double plate wafer relay 685.This step comprises step following time: (1) is positioned over stop position with above-mentioned second wafer XOn load/unload dish 182x; (2) by pivoting action AAbove-mentioned load/unload dish 182x is transported to the wafer load/unloading position of the wafer carrier 162 of above-mentioned grinding table 156 tops; (3) with above-mentioned second wafer load to above-mentioned wafer carrier 162; And (4) get back to its stop position with above-mentioned load/unload dish 182x transhipment XThen, in step 3340, use above-mentioned grinding pad 155 on above-mentioned grinding table 156, to grind above-mentioned second wafer.
Please refer to shown in Figure 33ly, is a milling apparatus 5000 of describing according to the present invention one second embodiment.In Figure 33, use the component symbol be same as Fig. 1, with identification common ground and assembly similar in appearance to the milling apparatus 1000 of Fig. 1 in above-mentioned milling apparatus 5000.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 5000 comprises a wafer input station 130, a wafer conveyer 140, one first grinding unit 600a, one second grinding unit 600b, a cleaning machine buffered station 135, a cleaning machine wafer conveyer 350, a wafer cleaning machine 420, an output wafer conveyer 450 and a wafer output station 460.
Above-mentioned wafer input station 130 holds wafer to be ground.Above-mentioned cleaning machine buffered station 135 holds the wafer of grinding to be cleaned.Above-mentioned wafer output station 460 holds the wafer of grinding that above-mentioned wafer cleaning machine 420 cleans.Above-mentioned cleaning machine buffered station 135 can comprise a plurality of in order to hold the slit of a plurality of wafers.Above-mentioned cleaning machine buffered station 135 can be connected to an aerosol generator (fog generator) (not shown).The aerosol that above-mentioned aerosol generator is supplied is in order to prevent that above-mentioned wafer from becoming dry when wafer is stored in above-mentioned cleaning machine buffered station 135.In another way, can in above-mentioned cleaning machine buffered station 135, use the deionized water spraying, to replace aerosol from above-mentioned aerosol generator.
Above-mentioned grinding unit 600a and 600b are positioned in the above-mentioned milling apparatus 5000, so that above-mentioned wafer conveyer 140 can be transported to wafer above-mentioned grinding unit 600a and 600b and transport above-mentioned wafer from above-mentioned grinding unit 600a and 600b.Above-mentioned wafer conveyer 140 is at 180 transhipments of wafer relay wafer of above-mentioned wafer input station 130, above-mentioned cleaning machine buffered station 135 and above-mentioned grinding unit 600a and 600b.Above-mentioned wafer conveyer 140 can be installed on the linear track 145, so that above-mentioned wafer conveyer 140 can be displaced on the above-mentioned linear track 145 by linear mode.Above-mentioned wafer conveyer 140 also can be configured at above-mentioned wafer conveyer 140 wafer is transported to the wafer relay 180 of above-mentioned grinding unit 600a and 600b and the above-mentioned wafer of preceding upset of above-mentioned cleaning machine buffered station 135.
Above-mentioned cleaning machine wafer conveyer 350 is transported to above-mentioned cleaning machine 420 with wafer from above-mentioned cleaning machine buffered station 135.Above-mentioned cleaning machine wafer conveyer 350 can be installed on a linear track 355, so that above-mentioned cleaning machine wafer conveyer 350 can be displaced on the above-mentioned linear track 355 by linear mode.Above-mentioned cleaning machine wafer conveyer 350 can be configured at above-mentioned cleaning machine wafer conveyer 350 wafer is transported to the above-mentioned wafer of preceding upset of above-mentioned wafer cleaning machine 420.
Above-mentioned output wafer conveyer 450 is transported to above-mentioned wafer output station 460 with wafer from above-mentioned wafer cleaning machine 420.Above-mentioned output wafer conveyer 450 can be installed on the linear track 455, so that above-mentioned output wafer conveyer 450 can be displaced on the above-mentioned linear track 455 by linear mode.
Above-mentioned wafer cleaning machine 420 comprises one first cleaning station 422, one second cleaning station 424, one the 3rd cleaning station 426, a drying station 428, one first wafer conveyer 432, one second wafer conveyer 434 and one the 3rd wafer conveyer 436.The above-mentioned first wafer conveyer 432 is transported to above-mentioned second cleaning station 424 with wafer from above-mentioned first cleaning station 422.The above-mentioned second wafer conveyer 434 is transported to above-mentioned the 3rd cleaning station 426 with wafer from above-mentioned second cleaning station 424.Above-mentioned the 3rd wafer conveyer 436 is transported to above-mentioned drying station 428 with wafer from above-mentioned the 3rd cleaning station 426.By above-mentioned output wafer conveyer 450 dry wafer is removed from above-mentioned drying station 428, be transported to above-mentioned wafer output station 460 then.Above-mentioned first, second and third cleaning station 422,424 and 426 (for example: ammonium hydroxide (NH uses deionized water and/or chemicals 4What OH), dilution hydrogen fluoride (diluteHF) and organic chemistry material) remove crystal column surface grinds the slurry particle.Above-mentioned first, second and third cleaning station 422,424 and 426 can comprise the brush that grinds the slurry particle in order to removal.After finishing above-mentioned manufacturing process for cleaning, come cleaning wafer with deionized water, then the above-mentioned wafer of oven dry in above-mentioned drying station 428.Above-mentioned wafer cleaning machine 420 can comprise more than three or following cleaning station.
In the tandem pattern operation of above-mentioned milling apparatus 5000, by above-mentioned wafer conveyer 140 wafer is transported to the above-mentioned first grinding unit 600a from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, grind above-mentioned wafer then.After in the above-mentioned first grinding unit 600a, finishing above-mentioned grinding processing procedure, wafer is transported to the above-mentioned second grinding unit 600b, in the above-mentioned second grinding unit 600b, further grinds above-mentioned wafer then by above-mentioned wafer conveyer 140.In above-mentioned grinding unit 600a and 600b, can use difference to grind slurry, different grinding pad and/or different abrasive parameters.After in the above-mentioned second grinding unit 600b, finishing above-mentioned grinding processing procedure, by above-mentioned wafer conveyer 140 above-mentioned wafer is transported to above-mentioned cleaning machine buffered station 135 from the above-mentioned second grinding unit 600b, is sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, by above-mentioned output wafer conveyer 450 above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460.
In a pattern operation arranged side by side of above-mentioned milling apparatus 5000, by above-mentioned wafer conveyer 140 one first group of wafer is transported to the above-mentioned first grinding unit 600a from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, grind then.By above-mentioned wafer conveyer 140 one second group of wafer is transported to the above-mentioned second grinding unit 600b from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600b, grinds then.After finishing above-mentioned grinding processing procedure, by above-mentioned wafer conveyer 140 above-mentioned first group and second group of wafer are transported to above-mentioned cleaning machine buffered station 135, be sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, by above-mentioned output wafer conveyer 450 above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460.Above-mentioned wafer conveyer 140 can be transported to above-mentioned first group and second group of wafer above-mentioned grinding unit 600a and 600b and transport above-mentioned first group and second group of wafer from above-mentioned grinding unit 600a and 600b, so that can transport wherein one group of wafer earlier, and then transport another group wafer.In another situation, above-mentioned wafer conveyer 140 mode of can taking turns is transported to wafer above-mentioned first and second grinding unit 600a and 600b and transports above-mentioned wafer from above-mentioned first and second grinding unit 600a and 600b.
Even if the milling apparatus 5000 (comprising above-mentioned grinding unit 600a and 600b) relevant for Figure 33 has been described, but above-mentioned milling apparatus 5000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 34 (a) shows above-mentioned milling apparatus 5000, and it comprises above-mentioned grinding unit 520a and 520b.As another example, Figure 34 (b) shows above-mentioned milling apparatus 5000, and it comprises above-mentioned grinding unit 620a and 620b.As another example, Figure 34 (c) shows above-mentioned milling apparatus 5000, and it comprises above-mentioned grinding unit 580a and 580b.Moreover, be included in two grinding units that grinding unit can be different kenels in the above-mentioned milling apparatus 5000.
Please refer to shown in Figure 35ly, is the milling apparatus of describing according to the present invention 1 the 3rd embodiment 6000.In Figure 35, use the component symbol be same as Figure 33, with identification common ground and assembly similar in appearance to the milling apparatus 5000 of Figure 33 in above-mentioned milling apparatus 6000.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 6000 is similar in appearance to milling apparatus shown in Figure 33 5000.Above-mentioned two milling apparatus 5000 and 6000 s' difference is: above-mentioned milling apparatus 600 further comprises one the 3rd grinding unit 600c.Above-mentioned three grinding unit 600a, 600b and 600c are disposed in the above-mentioned milling apparatus 6000, so that above-mentioned wafer conveyer 140 can be transported to wafer above-mentioned three grinding unit 600a, 600b and 600c and transport above-mentioned wafer from above-mentioned three grinding unit 600a, 600b and 600c.Therefore, in above-mentioned milling apparatus 6000, above-mentioned wafer conveyer 140 can be at 180 transhipments of wafer relay wafer of above-mentioned wafer input station 130, above-mentioned cleaning machine buffered station 135 and above-mentioned grinding unit 600a, 600b and 600c.
In the tandem pattern operation of above-mentioned milling apparatus 6000, grind wafer in a sequential manner at above-mentioned first, second and third grinding unit 600a, 600b and 600c.In above-mentioned grinding unit 600a, 600b and 600c, can use difference to grind slurry, different grinding pad and/or different abrasive parameters.After finishing above-mentioned grinding processing procedure, by above-mentioned wafer conveyer 140 above-mentioned wafer is transported to above-mentioned cleaning machine buffered station 135, be sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, by above-mentioned output wafer conveyer 450 above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460.
In a pattern operation arranged side by side of above-mentioned milling apparatus 6000, by above-mentioned wafer conveyer 140 one first group of wafer is transported to the above-mentioned first grinding unit 600a from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, grind then.By above-mentioned wafer conveyer 140 one second group of wafer is transported to the above-mentioned second grinding unit 600b from above-mentioned wafer input station 130, in the above-mentioned second mill unit 600b, grinds then.By above-mentioned wafer conveyer 140 one the 3rd group of wafer is transported to above-mentioned the 3rd grinding unit 600c from above-mentioned wafer input station 130, in above-mentioned the 3rd grinding unit 600c, grinds then.After finishing above-mentioned grinding processing procedure, by above-mentioned wafer conveyer 140 above-mentioned first group, second group and the 3rd group of wafer are transported to above-mentioned cleaning machine buffered station 135, are sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, by above-mentioned output wafer conveyer 450 above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460.
In a mixed mode operations of above-mentioned milling apparatus 6000, by above-mentioned wafer conveyer 140 wafer is transported to the above-mentioned first grinding unit 600a from above-mentioned wafer input station 130, use then one first kind grind the slurry and one first kind of grinding pad in the above-mentioned first grinding unit 600a, grind above-mentioned wafer.Next, the one first group of wafer that is ground among the above-mentioned first grinding unit 600a is transported to the above-mentioned second grinding unit 600b by above-mentioned wafer conveyer 140 from the above-mentioned first grinding unit 600a, uses one second kind to grind slurry and one second kind of grinding pad further grinds above-mentioned first group of wafer in the above-mentioned second grinding unit 600b then.The one second group of wafer that is ground among the above-mentioned first grinding unit 600a is transported to above-mentioned the 3rd grinding unit 600c by above-mentioned wafer conveyer 140 from the above-mentioned first grinding unit 600a, uses above-mentioned second kind to grind slurry and above-mentioned second kind of grinding pad further grinds above-mentioned second group of wafer in above-mentioned the 3rd grinding unit 600c then.After finishing above-mentioned grinding processing procedure, above-mentioned first and second group wafer is transported to above-mentioned cleaning machine buffered station 135 by above-mentioned wafer conveyer 140 from the above-mentioned second and the 3rd grinding unit 600b and 600c, is sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Above-mentioned first kind is ground slurry and/or above-mentioned first kind and grinds grinding pad and also can be used among above-mentioned second and third grinding unit 600b and the 600c, grind slurry and above-mentioned second kind of grinding pad to replace above-mentioned second kind.
In another mixed mode operations of above-mentioned milling apparatus 6000, one first group of wafer is transported to the above-mentioned first grinding unit 600a by above-mentioned wafer conveyer 140 from above-mentioned wafer input station 130, use then one first kind grind the slurry and one first kind of grinding pad in the above-mentioned first grinding unit 600a, grind above-mentioned first group of wafer.One second group of wafer is transported to the above-mentioned second grinding unit 600b by above-mentioned wafer conveyer 140 from above-mentioned wafer input station 130, use then above-mentioned first kind grind the slurry and above-mentioned first kind of grinding pad in the above-mentioned second grinding unit 600b, grind above-mentioned second group of wafer.Afterwards, above-mentioned first group and second group of wafer are transported to above-mentioned the 3rd grinding unit 600c by above-mentioned wafer conveyer 140, use one second kind to grind slurry and one second kind of grinding pad further grinds above-mentioned first group and second group of wafer in above-mentioned the 3rd grinding unit 600c then.Above-mentioned first kind is ground slurry and/or above-mentioned first kind and grinds grinding pad and also can be used among above-mentioned the 3rd grinding unit 600c, grind slurry and above-mentioned second kind of grinding pad to replace above-mentioned second kind.After finishing above-mentioned grinding processing procedure, above-mentioned first and second group wafer is transported to above-mentioned cleaning machine buffered station 135 by above-mentioned wafer conveyer 140, be sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.
Above-mentioned wafer conveyer 140 also can be transported to above-mentioned first group, second group and the 3rd group of wafer above-mentioned grinding unit 600a, 600b and 600c and transport above-mentioned first group, second group and the 3rd wafer from above-mentioned grinding unit 600a, 600b and 600c, so that can transport one group of wafer earlier, transport another group wafer again, transport last group wafer then.In another situation, above-mentioned wafer conveyer 140 mode of can taking turns is transported to wafer above-mentioned first, second and third grinding unit 600a, 600b and 600c continuously and transports above-mentioned wafer from above-mentioned first, second and third grinding unit 600a, 600b and 600c, so that once a wafer can only be transported to each grinding unit and only transport a wafer from each grinding unit.
Even if described the milling apparatus 6000 (comprising above-mentioned three grinding unit 600a, 600b and 600c) relevant for Figure 35, but above-mentioned milling apparatus 6000 can comprise the grinding unit 600 more than three.In addition, above-mentioned milling apparatus 6000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 36 shows above-mentioned milling apparatus 6000, and it comprises above-mentioned three grinding unit 520a, 520b and 520c.
Please refer to shown in Figure 37ly, is a milling apparatus 7000 of describing according to the present invention 1 the 4th embodiment.In Figure 37, use the component symbol be same as Figure 33, with identification common ground and assembly similar in appearance to the milling apparatus 5000 of Figure 33 in above-mentioned milling apparatus 7000.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 7000 is similar in appearance to milling apparatus shown in Figure 33 5000.Above-mentioned two milling apparatus 5000 and 7000 s' difference is: above-mentioned milling apparatus 7000 more comprise above-mentioned milling apparatus 5000 unexistent grinder buffered stations 136 and be positioned at the second wafer conveyer 140 on the milling apparatus 5000 '.The above-mentioned first wafer conveyer 140 is between above-mentioned wafer input station 130 and above-mentioned grinder buffered station 136.Above-mentioned grinder buffered station 136 be above-mentioned first and second wafer conveyer 140 and 140 ' between.The above-mentioned second wafer conveyer 140 ' be between above-mentioned grinder buffered station 136 and above-mentioned cleaning machine buffered station 135.The above-mentioned second wafer conveyer 140 ' also can a be installed on linear track 145 ' on so that the above-mentioned second wafer conveyer 140 ' can linear mode above-mentioned linear track 145 ' on move.
Above-mentioned grinder buffered station 136 can hold a plurality of wafers, and wherein above-mentioned wafer is by the above-mentioned grinder buffered station 136 of above-mentioned first and second wafer conveyer 140 and 140 ' be transported to and from above-mentioned grinder buffered station 136 transhipments.Above-mentioned grinder buffered station 136 can comprise a plurality of in order to hold the slit of a plurality of wafers.Above-mentioned grinder buffered station 136 can be connected to an aerosol generator (not shown).The aerosol that above-mentioned aerosol generator is supplied is in order to prevent that above-mentioned wafer from becoming dry when wafer is stored in above-mentioned grinder buffered station 136.In another way, can in above-mentioned grinder buffered station 136, use the deionized water spraying, to replace aerosol from above-mentioned aerosol generator.
The above-mentioned first grinding unit 600a is near the above-mentioned first wafer conveyer 140, and the above-mentioned second grinding unit 600b be near the above-mentioned second wafer conveyer 140 '.The above-mentioned first wafer conveyer 140 is transported wafer between above-mentioned wafer input station 130, above-mentioned grinder buffered station 136 and the above-mentioned first grinding unit 600a.The above-mentioned second wafer conveyer 140 ' at above-mentioned grinder buffered station 136, the above-mentioned second grinding unit 600b and 135 transhipments of above-mentioned cleaning machine buffered station wafer.
In an example operations of above-mentioned milling apparatus 7000, wafer is transported to the above-mentioned first grinding unit 600a by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, grind then.After in the above-mentioned first grinding unit 600a, finishing above-mentioned grinding processing procedure, above-mentioned wafer is transported to above-mentioned grinder buffered station 136 by the above-mentioned first wafer conveyer 140 from the above-mentioned first grinding unit 600a.Next, above-mentioned wafer by the above-mentioned second wafer conveyer 140 ' be transported to the above-mentioned second grinding unit 600b from above-mentioned grinder buffered station 136, is done further grinding then in the above-mentioned second grinding unit 600b.In above-mentioned grinding unit 600a and 600b, can use difference to grind slurry, different grinding pad and/or different abrasive parameters.After in the above-mentioned second grinding unit 600b, finishing above-mentioned grinding processing procedure, above-mentioned wafer by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned cleaning machine buffered station 135 from the above-mentioned second grinding unit 600b, is sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.
Even if described milling apparatus 7000 (comprising above-mentioned grinding unit 600a and 600b) relevant for Figure 37, but above-mentioned milling apparatus 7000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 38 shows above-mentioned milling apparatus 7000, and it comprises above-mentioned grinding unit 520a and 520b.
Please refer to shown in Figure 39ly, is a milling apparatus 8000 of describing according to the present invention 1 the 5th embodiment.In Figure 39, use the component symbol be same as Figure 33 and Figure 37, with identification in above-mentioned milling apparatus 8000 similar in appearance to the milling apparatus 5000 of Figure 33 and Figure 37 and 7000 common ground and assembly.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 8000 is similar in appearance to milling apparatus shown in Figure 37 7000.Above-mentioned two milling apparatus 7000 and 8000 s' difference is: above-mentioned milling apparatus 8000 more comprises one the 3rd grinding unit 600c.Above-mentioned the 3rd grinding unit 600c be near the above-mentioned second wafer conveyer 140 ', so that the above-mentioned second wafer conveyer 140 ' wafer can be transported to above-mentioned the 3rd grinding unit 600c and transport above-mentioned wafer from above-mentioned the 3rd grinding unit 600c.The above-mentioned second wafer conveyer 140 ' at above-mentioned grinder buffered station 136, the above-mentioned second grinding unit 600b, above-mentioned the 3rd grinding unit 620c and 135 transhipments of above-mentioned cleaning machine buffered station wafer.
In an example operations of above-mentioned milling apparatus 8000, wafer is transported to the above-mentioned first grinding unit 600a by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, uses one first kind to grind slurry and one first kind of grinding pad grinds then.After in the above-mentioned first grinding unit 600a, finishing above-mentioned grinding processing procedure, above-mentioned wafer is transported to above-mentioned grinder buffered station 136 by the above-mentioned first wafer conveyer 140.Next, one first group of wafer that will be ground in the above-mentioned first grinding unit 600a is by the above-mentioned second wafer conveyer 140 ' be transported to the above-mentioned second grinding unit 600b from above-mentioned grinder buffered station 136, uses one second kind to grind slurry and one second kind of grinding pad is done further grinding at the above-mentioned second grinding unit 600b then.One second group of wafer that will be ground in the above-mentioned first grinding unit 600a is by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned the 3rd grinding unit 600c from above-mentioned grinder buffered station 136, uses above-mentioned second kind to grind slurry and above-mentioned second kind of grinding pad done further grinding at above-mentioned the 3rd grinding unit 600c then.Above-mentioned wafer conveyer 140 ' also can be transported to above-mentioned first group, second group and the 3rd group of wafer above-mentioned grinding unit 600a, 600b and 600c and transport above-mentioned first group, second group and the 3rd wafer from above-mentioned grinding unit 600a, 600b and 600c, so that transport one group of wafer earlier, transport another group wafer again, transport last group wafer then.In another situation, the above-mentioned wafer conveyer 140 ' mode of can taking turns is transported to wafer above-mentioned first, second and third grinding unit 600a, 600b and 600c continuously and transports above-mentioned wafer from above-mentioned first, second and third grinding unit 600a, 600b and 600c, so that once a wafer can only be transported to each grinding unit and only transport a wafer from each grinding unit.
After in the above-mentioned second and second grinding unit 600b and 600c, finishing above-mentioned grinding processing procedure, above-mentioned first group and second group of wafer by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned cleaning machine buffered station 135 from above-mentioned second and third grinding unit 600b and 600c, are sent to above-mentioned wafer cleaning machine 420 by a cleaning machine wafer conveyer 350 then.Afterwards, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.Above-mentioned first kind grind the slurry and/or above-mentioned first kind of grinding pad also can be used among above-mentioned second and third grinding unit 600b and the 600c, with replace above-mentioned second kind grind the slurry and above-mentioned the third grinding pad.
Even if described milling apparatus 8000 (comprising above-mentioned grinding unit 600a, 600b and 600c) relevant for Figure 39, but above-mentioned milling apparatus 8000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 40 shows above-mentioned milling apparatus 8000, and it comprises above-mentioned grinding unit 520a, 520b and 520c.
Please refer to shown in Figure 41ly, is a milling apparatus 9000 of describing according to the present invention 1 the 6th embodiment.In Figure 41, use the component symbol be same as Figure 33 and Figure 39, with identification in above-mentioned milling apparatus 9000 similar in appearance to the milling apparatus 5000 of Figure 33 and Figure 39 and 8000 common ground and assembly.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 9000 is similar in appearance to milling apparatus shown in Figure 39 8000.Above-mentioned two milling apparatus 8000 and 9000 s' difference is: above-mentioned grinder buffered station 136 is between above-mentioned second and third grinding unit 600b and 600c in above-mentioned milling apparatus 9000, yet above-mentioned grinder buffered station 136 is between above-mentioned first and second grinding unit 600a and 600b in above-mentioned milling apparatus 8000.Therefore, in above-mentioned milling apparatus 9000, the above-mentioned first wafer conveyer 140 is transported wafer between above-mentioned wafer input station 140, above-mentioned grinder buffered station 136, the above-mentioned first grinding unit 600a and the above-mentioned second grinding unit 600b.Moreover, the above-mentioned second wafer conveyer 140 ' at above-mentioned grinder buffered station 136, above-mentioned the 3rd grinding unit 620c and 135 transhipments of above-mentioned cleaning machine buffered station wafer.
In an example operations of above-mentioned milling apparatus 9000, one first group of wafer is transported to the above-mentioned first grinding unit 600a by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, uses one first kind to grind slurry and one first kind of grinding pad grinds then.One second group of wafer is transported to the above-mentioned second grinding unit 600b by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned second grinding unit 600b, uses above-mentioned first kind to grind slurry and above-mentioned first kind of grinding pad grinds then.In above-mentioned first and second grinding unit 600a and 600b, finish after the above-mentioned grinding processing procedure, above-mentioned first group and second group of wafer are transported to above-mentioned grinder buffered station 136 by the above-mentioned first wafer conveyer 140.Above-mentioned wafer conveyer 140 can be transported to above-mentioned first group and second group of wafer above-mentioned grinding unit 600a and 600b and transport above-mentioned wafer from above-mentioned grinding unit 600a and 600b, so that can transport one group of wafer earlier, transports another group wafer afterwards again.In another situation, above-mentioned wafer conveyer 140 mode of can taking turns is transported to wafer above-mentioned first and second grinding unit 600a and 600b and transports above-mentioned wafer from above-mentioned first and second grinding unit 600a and 600b.
Next, by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned the 3rd grinding unit 600c, in above-mentioned the 3rd grinding unit 600c, use one second kind to grind slurry and one second kind of grinding pad grinds then above-mentioned first group and second group of wafer from above-mentioned grinder buffered station 136.After in above-mentioned the 3rd grinding unit 600c, finishing above-mentioned grinding processing procedure, above-mentioned first group and second group of wafer by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned cleaning machine buffered station 135 from above-mentioned the 3rd grinding unit 600c, are sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Afterwards, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.Above-mentioned first kind grind the slurry and/or above-mentioned first kind of grinding pad can be used among above-mentioned the 3rd grinding unit 600c, with replace above-mentioned second kind grind the slurry and above-mentioned second kind of grinding pad.
Even if described milling apparatus 9000 (comprising above-mentioned grinding unit 600a, 600b and 600c) relevant for Figure 41, but above-mentioned milling apparatus 9000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 42 shows above-mentioned milling apparatus 9000, and it comprises above-mentioned grinding unit 520a, 520b and 520c.
Please refer to shown in Figure 43ly, is a milling apparatus 10000 of describing according to the present invention 1 the 7th embodiment.In Figure 43, use the component symbol be same as Figure 33 and Figure 39, with identification in above-mentioned milling apparatus 10000 similar in appearance to the milling apparatus 5000 of Figure 33 and Figure 39 and 8000 common ground and assembly.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 10000 is similar in appearance to milling apparatus shown in Figure 41 9000.Above-mentioned two milling apparatus 9000 and 10000 s' difference is: above-mentioned milling apparatus 10000 more comprises one the 4th grinding unit 600d.Above-mentioned the 4th grinding unit 600d be near the above-mentioned second wafer conveyer 140 ', so that the above-mentioned second wafer conveyer 140 ' wafer can be transported to above-mentioned the 4th grinding unit 600d and transport above-mentioned wafer from above-mentioned the 4th grinding unit 600d.Therefore, in above-mentioned milling apparatus 10000, the above-mentioned first wafer conveyer 140 is transported wafer between above-mentioned wafer input station 130, above-mentioned grinder buffered station 136, the above-mentioned first grinding unit 600a and the above-mentioned second grinding unit 600b.Moreover, the above-mentioned second wafer conveyer 140 ' at above-mentioned grinder buffered station 136, above-mentioned the 3rd grinding unit 600c, above-mentioned the 4th grinding unit 600d and 135 transhipments of above-mentioned cleaning machine buffered station wafer.
In an example operations of above-mentioned milling apparatus 10000, one first group of wafer is transported to the above-mentioned first grinding unit 600a by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, uses one first kind to grind slurry and one first kind of grinding pad grinds then.One second group of wafer is transported to the above-mentioned second grinding unit 600b by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned second grinding unit 600b, uses above-mentioned first kind to grind slurry and above-mentioned first kind of grinding pad grinds then.In above-mentioned first and second grinding unit 600a and 600b, finish after the above-mentioned grinding processing procedure, above-mentioned first group and second group of wafer are transported to above-mentioned grinder buffered station 136 by the above-mentioned first wafer conveyer 140.Above-mentioned wafer conveyer 140 can be transported to above-mentioned first group and second group of wafer above-mentioned grinding unit 600a and 600b and transport above-mentioned wafer from above-mentioned grinding unit 600a and 600b, so that can transport one group of wafer earlier, transports another group wafer afterwards again.In another situation, above-mentioned wafer conveyer 140 mode of can taking turns is transported to wafer above-mentioned first and second grinding unit 600a and 600b and transports above-mentioned wafer from above-mentioned first and second grinding unit 600a and 600b.
Next, by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned the 3rd grinding unit 600c, in above-mentioned the 3rd grinding unit 600c, use one second kind to grind slurry and one second kind of grinding pad grinds then above-mentioned first group of wafer from above-mentioned grinder buffered station 136.By the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned the 4th grinding unit 600d, in above-mentioned the 4th grinding unit 600d, use above-mentioned second kind to grind slurry and above-mentioned second kind of grinding pad grinds then above-mentioned second group of wafer from above-mentioned grinder buffered station 136.After in the above-mentioned the 3rd and the 4th grinding unit 600c and 600d, finishing above-mentioned grinding processing procedure, above-mentioned first group and second group of wafer by the above-mentioned second wafer conveyer 140 ' be transported to above-mentioned cleaning machine buffered station 135 from above-mentioned the three or four grinding unit 600c and 600d respectively, are sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then.Above-mentioned wafer conveyer 140 ' above-mentioned first group and second group of wafer can be transported to above-mentioned grinding unit 600c and 600d and transport above-mentioned wafer from above-mentioned grinding unit 600c and 600d so that can transport one group of wafer earlier, is transported another group wafer afterwards again.In another situation, above-mentioned wafer conveyer 140 ' can take turns mode is transported to wafer the above-mentioned the 3rd and the 4th grinding unit 600c and 600d and transports above-mentioned wafer from the above-mentioned the 3rd and the 4th grinding unit 600ca and 600d.
Then, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.Above-mentioned first kind grind the slurry and/or above-mentioned first kind of grinding pad also can be used among the above-mentioned the 3rd and the 4th grinding unit 600c and the 600d, with replace above-mentioned second kind grind the slurry and above-mentioned second kind of grinding pad.
Even if described milling apparatus 10000 (comprising above-mentioned grinding unit 600a, 600b, 600c and 600d) relevant for Figure 43, but above-mentioned milling apparatus 10000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 44 shows above-mentioned milling apparatus 10000, and it comprises above-mentioned grinding unit 520a, 520b, 520c and 520d.
Please refer to shown in Figure 45ly, is a milling apparatus 11000 of describing according to the present invention 1 the 8th embodiment.In Figure 45, use the component symbol be same as Figure 33 and Figure 39, with identification in above-mentioned milling apparatus 11000 similar in appearance to the milling apparatus 5000 of Figure 33 and Figure 39 and 8000 common ground and assembly.Moreover, will can not describe these common grounds and assembly in detail below.
Above-mentioned milling apparatus 11000 is similar in appearance to milling apparatus shown in Figure 39 8000.Above-mentioned milling apparatus 8000 and 11000 s' difference is: above-mentioned milling apparatus 11000 more comprise one second grinder buffered station 136 ' and one the 3rd wafer conveyer 140 ".The above-mentioned second grinder buffered station 136 ' be positioned at the above-mentioned second wafer conveyer 140 ' and above-mentioned the 3rd wafer conveyer 140 " between.Above-mentioned the 3rd wafer conveyer 140 " be the above-mentioned second grinder buffered station 136 ' and above-mentioned cleaning machine buffered station 135 between.Above-mentioned the 3rd wafer conveyer 140 " the above-mentioned second grinder buffered station 136 ', 135 transhipments of above-mentioned the 3rd grinding unit 600c and above-mentioned cleaning machine buffered station wafer.On above-mentioned the 3rd wafer conveyer 140 " also can be installed on a linear track 145 ", " can linear mode at above-mentioned linear track 145 " goes up and moves so that above-mentioned the 3rd wafer conveyer 140.Therefore, in above-mentioned milling apparatus 11000, the above-mentioned second wafer conveyer 140 ' at above-mentioned grinder buffered station 136, the above-mentioned second grinding unit 600b and above-mentioned two grinder buffered stations a 136 ' transhipment wafer.
In an example operations of above-mentioned milling apparatus 11000, wafer is transported to the above-mentioned first grinding unit 600a by the above-mentioned first wafer conveyer 140 from above-mentioned wafer input station 130, in the above-mentioned first grinding unit 600a, uses one first kind to grind slurry and one first kind of grinding pad grinds then.After in the above-mentioned first grinding unit 600a, finishing above-mentioned grinding processing procedure, above-mentioned wafer is transported to the above-mentioned first grinder buffered station 136 by the above-mentioned first wafer conveyer 140 from the above-mentioned first grinding unit 600a.Next, by the above-mentioned second wafer conveyer 140 ' be transported to the above-mentioned second grinding unit 600b, in the above-mentioned second grinding unit 600b, use one second kind to grind slurry and one second kind of grinding pad is done further grinding then above-mentioned wafer from the above-mentioned first grinder buffered station 136.Also can in the above-mentioned second grinding unit 600b, use above-mentioned first kind grind the slurry and above-mentioned first kind of grinding pad grind above-mentioned wafer.Next, with above-mentioned wafer by above-mentioned the 3rd wafer conveyer 140 " from above-mentioned the 3rd grinding unit 600c of the above-mentioned second grinder buffered station 136 ' be transported to, in above-mentioned the 3rd grinding unit 600c, use then one the third grind slurry and the third grinding pad is done further grinding.Also can in above-mentioned the 3rd grinding unit 600c, use above-mentioned first kind or second kind to grind slurry and above-mentioned first kind or second kind of grinding pad and do and grind above-mentioned wafer.After in above-mentioned the 3rd grinding unit 600c, finishing above-mentioned grinding processing procedure, above-mentioned wafer " is transported to above-mentioned cleaning machine buffered station 135 from above-mentioned the 3rd grinding unit 600c, is sent to above-mentioned wafer cleaning machine 420 by above-mentioned cleaning machine wafer conveyer 350 then by the 3rd wafer conveyer 140.Afterwards, above-mentioned cleaning wafer is transported to above-mentioned wafer output station 460 by above-mentioned output wafer conveyer 450.
(comprise above-mentioned grinding unit 600a, 600b and 600c, above-mentioned two grinder buffered stations 136 and 136 ' and above-mentioned three wafer conveyers 140,140 ' and 140 "), but above-mentioned milling apparatus 11000 can comprise the above-mentioned grinding unit 600 of other number, above-mentioned grinder buffered station 136 and above-mentioned wafer conveyer 140 even if described milling apparatus 11000 relevant for Figure 45.Usually, above-mentioned milling apparatus 11000 comprises N grinding unit, a N-1 grinder buffered station 136 and N wafer conveyer 140, and wherein N is one more than or equal to 3 integer.As an example, Figure 46 shows above-mentioned milling apparatus 11000, and it comprises four grinding unit 600a, 600b, 600c and 600d, three grinder buffered stations 136,136 ' and 136 " and four wafer conveyers 140,140 ', 140 " and 140 .
Moreover above-mentioned milling apparatus 11000 can comprise any grinding unit, and it can be selected from Fig. 1～grinding unit 150,500,520,540,560,580,600,620,640,660,680,700 and 720 shown in Figure 32.As an example, Figure 47 shows above-mentioned milling apparatus 11000, and it comprises above-mentioned grinding unit 520a, 520b and 520c.
Refer now to Figure 48 and shown in Figure 49, description is according to a modified wafer relay 181 of one embodiment of the invention, and it is in order to be substituted in the wafer relay 180 in grinding unit 150,500,520,540,560,580,600,620,640 of the present invention and 660.Figure 48 and Figure 49 are respectively side view and the vertical views of modified wafer relay 181x and 181y.In Figure 48 and Figure 49, show that above-mentioned modified wafer relay 181x and 181y are installed in the above-mentioned grinding unit 150.Yet these modified wafer relay 181x and 181y can be used in any grinding unit 500,520,540,560,580,600,620,640 and 660.
Each modified wafer relay 181 comprises a load/unload dish 182, a pivotal arm 183, a pivotal axis 184, a pivot 187, a pivot supporter 188 and a vertical drive mechanism 189.Above-mentioned load/unload dish 182 is connected to above-mentioned pivotal axis 184 via above-mentioned pivotal arm 183.Also can make above-mentioned load/unload dish 182 be connected directly to above-mentioned pivotal axis 184, and not need via above-mentioned pivotal arm 183.Above-mentioned pivotal axis 184 be installed on above-mentioned pivot 187 upper surface a primary importance K1On.Above-mentioned primary importance K1Be the end near above-mentioned pivot 187, wherein above-mentioned end is to be positioned at above-mentioned grinding table 156 tops.One second place of the lower surface of above-mentioned pivot 187 K2Be to be installed on the above-mentioned pivot supporter 188.Said second position K2Be the other end near above-mentioned pivot 187, the wherein above-mentioned other end is the outside at above-mentioned grinding table 156.Above-mentioned pivot supporter 188 is to be connected to above-mentioned vertical drive mechanism 189, and wherein above-mentioned vertical drive mechanism 189 is installed on the bottom enclosure structure 153 of close above-mentioned grinding table 156 of above-mentioned grinding unit 150.
Above-mentioned pivot 187 is controlled the motion of above-mentioned load/unload dish 182 by the above-mentioned pivotal axis 184 that pivots.As looking from side, can (more particularly, can be by adjusting above-mentioned first and second position by the length of adjusting above-mentioned pivot 187 K1And K2Between distance) adjust the position of the pivotal axis 184 of above-mentioned grinding table 156 tops.Above-mentioned vertical drive mechanism 189 controls moving both vertically of above-mentioned load/unload dish 182 by vertically moving above-mentioned pivot supporter 188.
The use of above-mentioned modified wafer relay 181 can be by making above-mentioned pivotal axis 184 be positioned over above-mentioned grinding table 156 tops near above-mentioned individual wafer carrier 162 places, reduce the plane space of above-mentioned grinding unit 150, therefore the pivotal point of above-mentioned load/unload dish 182 also can be near above-mentioned individual wafer carrier 162.When needs are changed above-mentioned grinding pad 155 and maybe needed to be installed on a new grinding pad on the above-mentioned grinding table 156, can temporarily above-mentioned modified wafer relay 181 be moved apart above-mentioned grinding table 156.
The operation of above-mentioned modified wafer relay 181x and 181y is now described.The load/unload dish 182x of above-mentioned modified wafer relay 181x is at its stop position XLast one first wafer (as shown in figure 49) that receives from above-mentioned wafer conveyer 140.Next, above-mentioned load/unload dish 182x moves pivotally by it ABe switched to wafer load/unloading position of the above-mentioned first wafer carrier 162a.Then, above-mentioned load/unload dish 182x vertically moves towards above-mentioned wafer carrier 162a by above-mentioned vertical drive mechanism 189.With above-mentioned first wafer load to the above-mentioned wafer carrier 162a, make above-mentioned load/unload dish 182x be pivoted back to above-mentioned stop position X, to receive one second wafer.After above-mentioned wafer conveyer 140 received above-mentioned second wafer, above-mentioned load/unload dish 182x moved pivotally by it at above-mentioned load/unload dish 182x BBe switched to wafer load/unloading position of the above-mentioned second wafer carrier 162b.Then, above-mentioned load/unload dish 182x vertically moves towards above-mentioned wafer carrier 162b by above-mentioned vertical drive mechanism 189.With above-mentioned second wafer load to the above-mentioned wafer carrier 162b, make above-mentioned load/unload dish 182x be pivoted back to above-mentioned stop position XAfter grinding above-mentioned first and second wafer, above-mentioned first and second wafer is unloaded from above-mentioned first and second wafer carrier 162a and 162b in regular turn, and be transported to above-mentioned wafer conveyer 140 by above-mentioned load/unload dish 182.To be same as the mode of the above-mentioned first modified wafer relay 181x, the load/unload dish 182y of the above-mentioned second modified wafer relay 181y is respectively by its pivoting action CAnd DThe the 3rd and the 4th wafer is transported to the above-mentioned the 3rd and the 4th wafer carrier 162c and 162d and transports above-mentioned wafer from the above-mentioned the 3rd and the 4th wafer carrier 162c and 162d.
Please refer to shown in Figure 50ly, describe the modified double plate wafer relay 686 according to one embodiment of the invention, it can be used in grinding unit 680,700 and 720 of the present invention.Figure 50 shows the vertical view of above-mentioned modified double plate wafer relay 686.In above-mentioned modified double plate wafer relay 686, two load/unload dish 182x and 182y are connected to a single pivotal axis 184 via indivedual pivotal arm 183x and 183y.Above-mentioned pivotal axis 184 is to be installed on the above-mentioned pivot 187.Above-mentioned pivot 187 is to be installed on the above-mentioned pivot supporter 188.Above-mentioned pivot supporter 188 is to be connected to above-mentioned vertical drive mechanism 189.Above-mentioned pivot 187 by the above-mentioned pivotal axis 184 that pivots to control the pivoting action of above-mentioned two load/unload dish 182x and 182y AAnd BAbove-mentioned vertical drive mechanism 189 moves above-mentioned pivot supporter 188 and controls moving both vertically of above-mentioned two load/unload dish 182x and 182y by vertical.
Above-mentioned modified double plate wafer relay 686 can be installed in above-mentioned grinding unit 680,700 and 720, so that make above-mentioned pivotal axis 184 be positioned over above-mentioned grinding table 156 tops near above-mentioned wafer carrier 162 parts, therefore the pivotal point of above-mentioned load/unload dish 182x and 182y also can be near above-mentioned wafer carrier.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.

Claims (38)

1, a kind of in order to grind the equipment of object, it is characterized in that it comprises:
One lapped face;
One object carrier is positioned over this lapped face top; And
One load/unload dish, a pivotal point that is configured to this lapped face top is that the center is switched to this object carrier, so that this object can be transported to this object carrier from this load/unload dish.
2, equipment according to claim 1, it is characterized in that more comprising one second object carrier, be positioned over this lapped face top, wherein this load/unload dish further is configured in order to be switched to this second object carrier, so that one second object can be transported to this second object carrier from this load/unload dish.
3, equipment according to claim 1, it is characterized in that more comprising one second load/unload dish, one second pivotal point that is configured to this lapped face top is that the center is switched to this object carrier, so that one second object can be transported to this object carrier from this second load/unload dish.
4, equipment according to claim 1 is characterized in that more comprising:
One second object carrier is positioned over this lapped face top; And
One second load/unload dish, one second pivotal point that is configured to this lapped face top is that the center is switched to this second object carrier, so that one second object can be transported to this second object carrier from this second load/unload dish.
5, equipment according to claim 4, it is characterized in that more comprising: one the 3rd object carrier, be positioned over this lapped face top, wherein this load/unload dish and this second load/unload dish further are configured in order to being switched to the 3rd object carrier, so that one the 3rd object one can be transported to the 3rd object carrier from this load/unload dish and this second load/unload dish.
6, equipment according to claim 4, it is characterized in that more comprising: the 3rd and the 4th object carrier, be positioned over this lapped face top, wherein this load/unload dish further is configured in order to be switched to the 3rd object carrier, so that one the 3rd object can be transported to the 3rd object carrier from this load/unload dish, and wherein this second load/unload dish further is configured in order to be switched to the 4th object carrier, so that one the 4th object can be transported to the 4th object carrier from this second load/unload dish.
7, equipment according to claim 1 is characterized in that more comprising one second loading and unloads load plate that being configured to this pivotal point is that the center is switched to this object carrier, so that one second object can be transported to this object carrier from this second load/unload dish.
8, equipment according to claim 1 is characterized in that more comprising:
One second object carrier is positioned over this lapped face top; And
One second load/unload dish, being configured to this pivotal point is that the center is switched to this second object carrier, so that one second object can be transported to this second object carrier from this second load/unload dish.
9, equipment according to claim 1, it is characterized in that wherein said load/unload dish comprises a wafer-process lifter, this wafer-process lifter is vertically extended, this object is loaded into this object carrier and this object is unloaded from this object carrier.
10, a kind of in order to grind the method for object, it is characterized in that it may further comprise the steps:
Making an object to be ground is that the center is switched to an object carrier with a pivotal point of lapped face top;
This object is loaded into this object carrier;
Move this object carrier, so that the object on this object carrier is placed on this lapped face; And
The object of grinding on this lapped face.
11, method according to claim 10 is characterized in that more may further comprise the steps:
Making second object to be ground is that the center is switched to one second object carrier with this pivotal point;
This second object is loaded into this second object carrier;
Move this second object carrier, so that second object on this second object carrier is placed on this lapped face; And
Second object of grinding on this lapped face.
12, method according to claim 11, the pivot that it is characterized in that the pivot of wherein said first object and this second object comprise that with this pivotal point be center this first and second load/unload dish that pivots.
13, method according to claim 10 is characterized in that more may further comprise the steps:
Making second object to be ground is that the center is switched to this object carrier with one second pivotal point;
This second object is loaded into this object carrier;
Move this object carrier, so that second object on this object carrier is placed on this lapped face; And
Second object of grinding on this lapped face.
14, method according to claim 10 is characterized in that more may further comprise the steps:
Making second object to be ground is that the center is switched to one second object carrier with one second pivotal point;
This second object is loaded into this second object carrier;
Move this second object carrier, so that second object on this second object carrier is placed on this lapped face; And
Second object of grinding on this lapped face.
15, method according to claim 14 is characterized in that more may further comprise the steps:
Make the 3rd object to be ground being that the center is switched to one the 3rd object carrier one of in this pivotal point and second pivotal point;
The 3rd object is loaded into the 3rd object carrier;
Move the 3rd object carrier, so that the 3rd object on the 3rd object carrier is placed on this lapped face; And
Three object of grinding on this lapped face.
16, method according to claim 15 is characterized in that more may further comprise the steps:
Making the 4th object to be ground is that the center is switched to one the 4th object carrier with (but being different from the employed pivotal point of the 3rd object) one of in this pivotal point and second pivotal point;
The 4th object is loaded into the 4th object carrier;
Move the 4th object carrier, so that the 4th object on the 4th object carrier is placed on this lapped face; And
Four object of grinding on this lapped face.
17, a kind of in order to grind the equipment of object, it is characterized in that it comprises:
At least one lapped face;
One first object carrier is positioned over this at least one lapped face top, and this first object carrier is configured in order to grip first object to be ground;
One second object carrier is positioned over this at least one lapped face top, and this second object carrier is configured in order to one of to grip in this first object and second object to be ground;
One load/unload dish is configured between this first and second object carrier to move, will one of being transported to one of in this first and second object in this first and second object carrier; And
One object conveyer is configured in order to this first and second object be transported to this load/unload dish and transport this first and second object from this load/unload dish.
18, equipment according to claim 17, it is characterized in that wherein said at least one lapped face comprises first and second lapped face, wherein this first object carrier is to be placed on this first lapped face top, and this second object carrier is to be placed on this second lapped face top.
19, equipment according to claim 18 is characterized in that more comprising:
One the 3rd lapped face;
One the 3rd object carrier is placed on the 3rd lapped face top; And
One second load/unload dish is configured between this second and third object carrier to move, will one of being transported to one of in this second object and one the 3rd object in this second and third object carrier.
20, equipment according to claim 19 is characterized in that wherein said first, second and third lapped face is to place with a linear structure.
21, equipment according to claim 18 is characterized in that comprising:
The the 3rd and the 4th lapped face;
The the 3rd and the 4th object carrier, the 3rd object carrier are to be positioned over the 3rd lapped face top, and the 4th object carrier is to be positioned over the 4th lapped face top; And
One second load/unload dish is configured between the 3rd and the 4th object carrier to move, will one of being transported to one of in this second object, one the 3rd object and one the 4th object in the 3rd and the 4th object carrier.
22, equipment according to claim 21 is characterized in that the wherein said first, second, third and the 4th lapped face is to place with a L shaped structure.
23, equipment according to claim 17, it is characterized in that wherein said load/unload dish comprises a wafer-process lifter, this wafer-process lifter is vertically extended, this object is loaded into this object carrier and this object is unloaded from this object carrier.
24, a kind of in order to grind the method for object, it is characterized in that it may further comprise the steps:
One object to be ground is transported to a load/unload dish;
Make this load/unload dish move to an object carrier, this object carrier is one of in two object carriers, and wherein this load/unload dish is movable to this two object carriers;
This object is loaded into this first object carrier;
Move this first object carrier, so that the object on this first object carrier is placed at least one lapped face; And
The object of grinding on this at least one lapped face.
25, method according to claim 24 is characterized in that more may further comprise the steps:
Move this load/unload dish to one second object carrier, one of transporting in this object and one second object, this second object carrier is one of in these two object carriers;
This two objects carrier will be loaded into one of in this object and this second object;
This at least one lapped face moves this second object carrier, so that will be placed on one of in this object on this two objects carrier and this second object; And
Grinding on this at least one lapped face this object and this second object in one of.
26, method according to claim 25, move this first and second object carrier mobile the comprising that it is characterized in that mobile and this second object carrier of the wherein said first object carrier, so that the object on this first object carrier is placed on one first lapped face, and will be placed on one second lapped face one of in the object on this second object carrier and second object.
27, method according to claim 25 is characterized in that more may further comprise the steps:
Move a specific load/unload dish, will be transported to one the 3rd object carrier one of in this second object and one the 3rd object with transhipment, this specific load/unload dish is one of in this load/unload dish and the one second load/unload dish;
The 3rd object carrier will be loaded into one of in this second object and the 3rd object;
One the 3rd lapped face moves the 3rd object carrier, so that will be placed on one of in second object on the 3rd object carrier and the 3rd object; And
Grinding on the 3rd lapped face second object and the 3rd object in one of.
28, method according to claim 25 is characterized in that more may further comprise the steps:
Move one second load/unload dish to the 3rd object carrier,, comprise and move this second load/unload dish to the 4th object carrier, one of to transport in this second object and one the 4th object one of to transport in this second object and one the 3rd object;
To be loaded into the 3rd object carrier one of in this second object and the 3rd object, and will be loaded into the 4th object carrier one of in this second object and the 4th object;
Move the 3rd and the 4th object carrier, so that will be placed on one the 3rd lapped face one of in second object on the 3rd object carrier and the 3rd object, and one the 4th lapped face will be placed on one of in second object on the 4th object carrier and four objects; And
Grinding on this three lapped face second object and the 3rd object in one of, and one of grind in second object on this four lapped face and the 4th object.
29, a kind of in order to grind the equipment of object, it is characterized in that it comprises:
First and second grinding unit, each first and second grinding unit comprises:
First and second lapped face;
One first object carrier is placed on this first lapped face top, and this first object carrier is to be configured in order to grip first object to be ground;
One second object carrier is placed on this second lapped face top, and this second object carrier is to be configured in order to grip second object to be ground;
One first load/unload dish is configured in order to be switched to this first object carrier, this first object be transported to this first object carrier and transport this first object from this first object carrier;
One second load/unload dish is configured in order to be switched to this second object carrier, this second object be transported to this second object carrier and transport this second object from this second object carrier; And
One wafer conveyer is configured in order to first and second load/unload dish of this first and second object being transported at least one grinding unit in this first and second grinding unit and transports this first and second object from this first and second load/unload dish.
30, a kind of in order to grind the equipment of object, it is characterized in that it comprises:
One lapped face;
First and second object carrier, be positioned over this lapped face top, this first object carrier is to be configured in order to grip first object to be ground, this second object carrier is to be configured in order to grip second object to be ground, and this first and second object carrier further is configured to grind independently first and second object on this lapped face;
One first load/unload dish is configured in order to be switched to this first object carrier, this first object be transported to this first object carrier and transport this first object from this first object carrier; And
One second load/unload dish is configured in order to be switched to this second object carrier, this second object be transported to this second object carrier and transport this second object from this second object carrier.
31, equipment according to claim 30 is characterized in that wherein said first and second load/unload dish is that the pivotal point that is configured to this lapped face top is that the center pivots.
32, equipment according to claim 30, it is characterized in that wherein said load/unload dish comprises a wafer-process lifter, this wafer-process lifter is vertically extended, this object is loaded into this object carrier and this object is unloaded from this object carrier.
33, a kind of in order to grind the method for object, it is characterized in that it may further comprise the steps:
One first object to be ground is switched to one first object carrier of lapped face top and the one second object carrier that second object to be ground is switched to this lapped face top;
This first object is loaded into this first object carrier and this second object is loaded into this second object carrier;
Move this first and second object carrier independently, so that second object on first object on this object carrier and this two objects carrier is placed on this lapped face independently; And
Grind first and second object on this lapped face independently.
34, method according to claim 33, it is characterized in that wherein said pivot step side draws together: is that the center is switched to this first object carrier and is that the center is switched to this second object carrier with this second object with one second pivotal axis with this first object with one first pivotal axis, and this first and second pivotal axis is to be positioned at this lapped face top.
35, a kind of in order to grind the equipment of object, it is characterized in that it comprises:
At least one lapped face;
At least one object carrier is positioned over this at least one lapped face top;
One first load/unload dish, being configured to a pivotal axis is that the center is switched to this at least one object carrier, one first object is transported to this at least one object carrier; And
One second load/unload dish, being configured to this pivotal axis is that the center is switched to this at least one object carrier, one second object is transported to this at least one object carrier.
36, equipment according to claim 35, the pivotal axis that it is characterized in that wherein said first and second load/unload dish are to be positioned at this at least one lapped face top.
37, equipment according to claim 36, it is characterized in that wherein said at least one lapped face comprises first and second lapped face, and this at least one object carrier comprises first and second object carrier, wherein this first object carrier is to be placed on this first lapped face top, and this second object carrier is to be placed on this second lapped face top.
38, equipment according to claim 36, it is characterized in that wherein said at least one lapped face comprises first and second lapped face, and this at least one object carrier comprises first and second object carrier, wherein this first object carrier is to be placed on this first lapped face top, and this second object carrier is to be placed on this second lapped face top.
CNB2004800029447A 2003-01-27 2004-01-27 Apparatus and method for polishing semiconductor wafers Expired - Fee Related CN100537134C (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US44295203P 2003-01-27 2003-01-27
US60/442,952 2003-01-27
US60/461,147 2003-04-08
US60/462,015 2003-04-11
US60/464,280 2003-04-21
US60/466,587 2003-04-30
US60/468,239 2003-05-05
US60/468,561 2003-05-06
US60/477,489 2003-06-10

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CN1741875A true CN1741875A (en) 2006-03-01
CN100537134C CN100537134C (en) 2009-09-09

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103298586B (en) * 2007-06-25 2015-07-15 大昌精机株式会社 Duplex head surface grinder
CN105598827A (en) * 2016-01-05 2016-05-25 天津华海清科机电科技有限公司 Chemical-mechanical polishing machine
CN106514438A (en) * 2016-11-11 2017-03-22 武汉新芯集成电路制造有限公司 Chemical and mechanical grinding device and grinding method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103298586B (en) * 2007-06-25 2015-07-15 大昌精机株式会社 Duplex head surface grinder
CN105598827A (en) * 2016-01-05 2016-05-25 天津华海清科机电科技有限公司 Chemical-mechanical polishing machine
CN105598827B (en) * 2016-01-05 2018-05-22 天津华海清科机电科技有限公司 Chemical-mechanical polishing mathing
US10857646B2 (en) 2016-01-05 2020-12-08 Tsinghua University Apparatus for chemical-mechanical polishing
CN106514438A (en) * 2016-11-11 2017-03-22 武汉新芯集成电路制造有限公司 Chemical and mechanical grinding device and grinding method thereof

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