CN1741298A - Method for raising organic semiconductor carrier mobility - Google Patents
Method for raising organic semiconductor carrier mobility Download PDFInfo
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- CN1741298A CN1741298A CN 200410056826 CN200410056826A CN1741298A CN 1741298 A CN1741298 A CN 1741298A CN 200410056826 CN200410056826 CN 200410056826 CN 200410056826 A CN200410056826 A CN 200410056826A CN 1741298 A CN1741298 A CN 1741298A
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Abstract
A method for raising mobility of organic semiconductor carrier includes forming gate on substrate ; forming an insulator layer on substrate and gate; coating polyimide to form interlayer on insulator layer by utilizing process of spin coating , inject printing , contact printing or plasma etching ; forming active layer on interlayer ; forming source electrode and drain electrode .
Description
Technical field
The present invention provides a kind of method that improves the organic semiconductor carrier transport factor, refers to a kind ofly in the structure of OTFT especially, by the adding of intermediate layer (interlayer), reaches the method that improves carrier transport factor.
Background technology
OTFT is by organic conjugate polymer or the made transistor of oligothiophene molecule material, with traditional inorganic transistors by comparison, OTFT can be made at low temperatures, therefore can adopt light, thin and cheap plastics to replace glass in the selection of substrate.In addition, OTFT method comparatively speaking simply and more not needs accurate technology and equipment, so have development potentiality.Though OTFT has above-mentioned advantage, but it is to be overcome to still have some bottlenecks to have in the research at present,, driving voltage slow as carrier transport factor crossed problems such as height, wherein because carrier transport factor is slow excessively, and the scope that has limited the OTFT exploitation and used.In general, the active layers molecule of OTFT is that the crystalline form with polysilicon exists, because each molecules oriented is not quite similar, makes different intergranulars have many crystal boundaries (boundary).These crystal boundaries can hinder the transmission of carrier, and then reduce the characteristic of assembly.Therefore, the research direction of OTFT mainly all concentrates on the molecule organic semiconductor that how to make active layers and exists with monocrystalline or the bigger kenel of crystalline particle at present.Wherein more common method is the surfaction to the deposition molecule organic semiconductor, promptly covers the comparatively compatible intermediate layer of one deck and molecule organic semiconductor crystalline form on dielectric layer, to improve the molecule organic semiconductor crystalline form.
(Self-Assembled Monolayer, method SAM) is made the intermediate layer between organic semiconductor/dielectric layer to No. 6433359 propositions of U.S. Pat with self-assembled monolayer.Though this method can make the intermediate layer manifest image (pattern), but must under the condition that precursor (precursor) and dielectric layer can react, can carry out, so its material selectivity is less, and precursor (precursor) is wayward with the reaction condition of dielectric layer, and prior art is to finish above-mentioned purpose in the mode of evaporation, and self-assembled monolayer in manufacturing process (SAM) volatilization easily makes quality stability not good.
Take a broad view of the above, there is following shortcoming at least in the manufacture method of the OTFT of prior art:
One, the manufacture method of the OTFT of prior art, the production method in its intermediate layer are comparatively complicated and consuming time, increase manufacturing cost, influence the market competitiveness.
Two, the manufacture method of the OTFT of prior art, the making in its intermediate layer must can be carried out under the condition that precursor (precursor) and dielectric layer can react, so its material selectivity is less, and precursor (precursor) is wayward with the reaction condition of dielectric layer.
Three, the manufacture method of the OTFT of prior art, mode with evaporation is finished the intermediate layer, self-assembled monolayer in manufacturing process (SAM) volatilization easily makes quality stability not good, and then influences acceptance rate and stability that OTFT is made.
Summary of the invention
Because the shortcoming of existent technique, the object of the present invention is to provide a kind of method that improves the organic semiconductor carrier transport factor, it is characterized in that being coated with specific macromolecular material, to form an intermediate layer (interlayer), step is simple and with low cost, increases the market competitiveness.
Another object of the present invention is to provide a kind of method that improves the organic semiconductor carrier transport factor, its feature only need be coated with specific macromolecular material as the intermediate layer, so the condition of its coating is controlled easily, the selectivity of material is bigger.
A further object of the present invention is to provide a kind of method that improves the organic semiconductor carrier transport factor, does not have the volatilization problem at it in manufacturing process, thus its organic semi-conductor stay in grade, and then improve the acceptance rate and stability that OTFT is made.
For reaching above-mentioned purpose, in the preferred embodiment of the method for raising organic semiconductor carrier transport factor of the present invention, mainly include the following step: (a) form grid (Gate) on a substrate; (b) form an insulating barrier (Insulator layer) on this substrate and this grid; (c) coating polyimides (Polyimide) is to form an intermediate layer (interlayer) on this insulating barrier; (d) form an active layers on this intermediate layer; (e) form source electrode and drain electrode.
Wherein, the coating polyimides can be finished with the method for spin-coating method (Spin Coating), ink jet printing method (Inject Printing), contact printing method (ContactPrinting) or plasma etching or the like to form the method for an intermediate layer on this insulating barrier.
Wherein, this active layers of described formation just forms organic semiconductor material layer, and described organic semiconducting materials can be macromolecular material, organic molecule material, perhaps the mixture of macromolecular material, organic molecule material and inorganic material.Its formation method can use vapour deposition method, spin-coating method, ink jet printing method and contact printing method wherein a kind of.
Wherein, it is wherein a kind of that described substrate can be silicon wafer, glass, quartz, plastic base and bendable musical form substrate; Described grid, source electrode and drain electrode can be metal and conducting polymer composite is wherein a kind of, for example: chromium (Cr) or tin indium oxide (ITO) etc.; It is wherein a kind of that described insulating barrier can be inorganic material commonly used, macromolecular material and high dielectric constant material.
Description of drawings
Figure 1A to Fig. 1 E is method first preferable of raising organic semiconductor carrier transport factor of the present invention
The embodiment schematic diagram.
Fig. 2 A to Fig. 2 E is method second preferable of raising organic semiconductor carrier transport factor of the present invention
The embodiment schematic diagram.
Drawing reference numeral explanation: 100,200 substrates; 101,201 grids; 102,202 insulating barriers; 103,203 intermediate layers; 104,204 active layers; 105,205 source electrodes; 106,206 drain electrodes.
Embodiment
For can to feature of the present invention, purpose and function have further cognitive with understand, now conjunction with figs. describe in detail as after.
Please refer to Figure 1A to Fig. 1 E, it is the first preferred embodiment schematic diagram of the method for raising organic semiconductor carrier transport factor of the present invention.
Shown in Figure 1A, one substrate 100 is provided, substrate 100 is carried out leading portion to be handled, behind cleaning, removal organic substance and the fine particles, form a grid (Gate) 101 again, and grid 101 is to use metal or conducting polymer composite, for example: chromium (Cr) or tin indium oxide (ITO) etc., substrate 100 generally can use silicon wafer, glass, quartz, plastic base or bendable musical form substrate or the like, as the base material of OTFT.
Shown in Figure 1B, form an insulating barrier (Insulator layer) 102 on this substrate 100 and this grid 101, this insulating barrier 102 can be used the material of inorganic material, macromolecular material or high-k (High-K), as the usefulness that insulate in the organic semiconductor.
Shown in Fig. 1 C, use spin-coating method (Spin Coating), ink jet printing method (InjectPrinting), contact printing method (Contact Printing) or plasma etching patterning modes such as (patterned by plasma etching), with specific macromolecular material polyimides (Polyimide), for example: Nissan chemical industries, RN-1349 that LTD produced or RN-1338, coat on this insulating barrier 102, form an intermediate layer (interlayer) 103, this intermediate layer may command organic molecule in organic semiconductor makes it certain direction and arranges than orderliness, the grain size of follow-up coating process is increased, the also minimizing that the crystal boundary number is relative, so preferable carrier conduction efficiency is arranged during the organic semiconductor operation, and reduce issuable electric leakage or cross-talk (crosstalk) between pixel (pixel) and the pixel, to reach the purpose of improving component characteristic and circuit design requirement.
Shown in Fig. 1 D, with evaporation, spin-coating method (Spin Coating), ink jet printing method (InjectPrinting) or contact printing method modes such as (Contact Printing), organic semiconducting materials is plated on this intermediate layer 103, form an active layers 104, the relation that this active layers 104 adds because of intermediate layer 103, and the crystal grain of active layers 104 is strengthened, so can obtain the active layers 104 of better electrical performance, that is improve the organic semi-conductor electrical property simultaneously, show by electrical analysis, the adding in intermediate layer 103 make the crystal grain of active layers 104 strengthen (that is crystal boundary minimizing), and the organic semi-conductor carrier transport factor is also by 0.01～0.02cm
2/ V-s is increased to 0.5～1.0cm
2/ V-s.
Shown in Fig. 1 E, use metal or conducting polymer composite, for example: chromium (Cr) or tin indium oxide (ITO) etc., form source electrode (Source) 105 and drain electrode (Drain) 106, finish upward contact/following grid (the Top contact/Bottom gate) structure of this preferred embodiment.
Please refer to Fig. 2 A to Fig. 2 E again, it is the second preferred embodiment schematic diagram of the method for raising organic semiconductor carrier transport factor of the present invention, the wherein materials used of the substrate 200 in the method step of Fig. 2 A to Fig. 2 B, grid 201 and insulating barrier 202, generation type or the like, similar with the method step of Figure 1A to Fig. 1 C of first preferred embodiment of the present invention, and in first preferred embodiment, described in detail, and below just no longer added to give unnecessary details.
Shown in Fig. 2 C to Fig. 2 E, in spin-coating method (Spin Coating), ink jet printing method (InjectPrinting), contact printing method (Contact Printing) or plasma etching patterning modes such as (patterned by plasma etching), with specific macromolecular material polyimides (Polyimide), for example: Nissan chemical industries, RN-1349 that LTD produced or RN-1338, coat and form an intermediate layer 203 on this insulating barrier 202, in this preferred embodiment, intermediate layer 203 also need not be covered with whole insulating barrier 202.Form active layers 204, source electrode 205 afterwards again and drain 206, finish upward contact/following grid (the Top contact/Bottom gate) structure of this second preferred embodiment.
In sum, the method of raising organic semiconductor carrier transport factor of the present invention, it is characterized in that being coated with specific macromolecular material as the intermediate layer, so the condition of its coating is controlled easily, the selectivity of material is bigger, step is simple and with low cost, again because of it does not have the volatilization problem in manufacturing process, so this organic stay in grade of partly leading; The above person, it only is preferred embodiment of the present invention, it is the structure of last contact/following grid (Top contact/Bottom gate), when not limiting the scope of the invention with it, association obtains easily, such as: use last contact/on grid (Top contact/Top gate), following contact/upward grid (Bottom contact/Top gate) or the structure of contact/following grid (Bottom contact/Bottom gate) or the like down, be familiar with this art person after comprehension spirit of the present invention, all can expect changing enforcement, promptly the equalization of doing according to claim of the present invention generally changes and modifies, will not lose main idea of the present invention place, also do not break away from the spirit and scope of the present invention, the former capital should be considered as further enforcement situation of the present invention.
Claims (7)
1, a kind of method that improves the organic semiconductor carrier transport factor is characterized in that its step comprises:
(a) form grid on a substrate;
(b) form an insulating barrier on this substrate and this grid;
(c) the coating polyimides is to form an intermediate layer on this insulating barrier;
(d) form an active layers on this intermediate layer;
(e) form source electrode and drain electrode.
2, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, it is wherein a kind of that wherein this substrate can be silicon wafer, glass, quartz, plastic base and bendable musical form substrate.
3, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, wherein this grid, this source electrode and this drain electrode can be metal and conducting polymer composite is wherein a kind of.
4, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, wherein to can be inorganic material, macromolecular material and high dielectric constant material wherein a kind of for this insulating barrier.
5, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, wherein this active layers is an organic semiconducting materials.
6, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, wherein step (c) coating polyimides can use spin-coating method, ink jet printing method, contact printing method and plasma etching wherein a kind of to form the method for an intermediate layer on this insulating barrier.
7, the method for raising organic semiconductor carrier transport factor as claimed in claim 1, wherein step (d) method that forms this active layers can use evaporation, spin-coating method, ink jet printing method and contact printing method wherein a kind of.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410056826 CN1741298B (en) | 2004-08-23 | 2004-08-23 | Method for raising organic semiconductor carrier mobility |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410056826 CN1741298B (en) | 2004-08-23 | 2004-08-23 | Method for raising organic semiconductor carrier mobility |
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| CN1741298A true CN1741298A (en) | 2006-03-01 |
| CN1741298B CN1741298B (en) | 2010-07-14 |
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| CN 200410056826 Expired - Fee Related CN1741298B (en) | 2004-08-23 | 2004-08-23 | Method for raising organic semiconductor carrier mobility |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501821B (en) * | 2006-08-07 | 2011-02-09 | 住友电气工业株式会社 | Method for manufacturing electronic circuit component |
| CN110211925A (en) * | 2019-04-04 | 2019-09-06 | 深圳市华星光电技术有限公司 | Push up light emitting-type indium gallium zinc film transistor device manufacturing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| CN1186822C (en) * | 2002-09-23 | 2005-01-26 | 中国科学院长春应用化学研究所 | Organic film transistor and preparing method |
-
2004
- 2004-08-23 CN CN 200410056826 patent/CN1741298B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101501821B (en) * | 2006-08-07 | 2011-02-09 | 住友电气工业株式会社 | Method for manufacturing electronic circuit component |
| US8026185B2 (en) | 2006-08-07 | 2011-09-27 | Sumitomo Electric Industries, Ltd. | Method for manufacturing electronic circuit component |
| CN110211925A (en) * | 2019-04-04 | 2019-09-06 | 深圳市华星光电技术有限公司 | Push up light emitting-type indium gallium zinc film transistor device manufacturing method |
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| Publication number | Publication date |
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| CN1741298B (en) | 2010-07-14 |
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