CN1733861A - Polishing composition - Google Patents

Polishing composition Download PDF

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Publication number
CN1733861A
CN1733861A CN 200510085991 CN200510085991A CN1733861A CN 1733861 A CN1733861 A CN 1733861A CN 200510085991 CN200510085991 CN 200510085991 CN 200510085991 A CN200510085991 A CN 200510085991A CN 1733861 A CN1733861 A CN 1733861A
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liquid composition
grinding
polishing particles
grinding liquid
substrate
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CN 200510085991
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CN100529008C (en
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西本和彦
平幸治
末永宪一
本间祐一
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Kao Corp
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Kao Corp
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Abstract

A polishing composition contains an abrasive and water, wherein the polishing composition has a pH of from 0.1 to 7, and satisfies the following conditions: (1) that the number of polishing particles having sizes of 0.56 mum or more and less than 1 mum is 500,000 or less per 1 cm<3 >of the polishing composition; and (2) that the ratio of polishing particles having sizes of 1 mum or more is 0.001% by weight or less to the entire polishing particles in the polishing composition. The invention also relates to the polishing composition and the method of the polishing granule blending liquid, comprising the refined process as following: (I) a middle filtering product filered refined polishing liquid composition or polishing granule blending liquid by deep filter, (II) the polishing composition or the polishing granule blending liquid acquired by utilizing fold filter to filter middle filter product, wherein the fluctuation range of the entrance pressure of the filter in the process I is 50KPa or below; relates to the manufacturing method of the substrate, having a process to make the polishing composition pass the polisher substrate.

Description

Grinding Liquid composition
Technical field
The present invention relates to grinding Liquid composition and polishing particles mixed liquid that in this grinding Liquid composition of allotment, uses and their manufacture method, and the manufacture method that relates to the substrate that uses this grinding Liquid composition.
Technical background
In storage hard disk drive in recent years, require heavy body and miniaturization, for improving recording density, require to reduce the flying height of magnetic head, reduce the area of unit record.Therefore, with in the manufacturing process of substrate, the surface quality after grinding is required also strict year by year at disk.As the countermeasure that reduces the magnetic head floats height, must reduce surfaceness, microcosmic percent ripple, end face sagging (roll-off) and the projection of substrate; As the countermeasure that reduces the unit record area, the cut number of allowing of each real estate further reduces, and it is more and more littler that the size of cut and the degree of depth also become.
In addition, at semiconductor applications, also to Highgrade integration and the development of high speed aspect, particularly Highgrade integration requires distribution more and more thinner.Its result, in the manufacturing processed of semiconductor substrate, the depth of focus when requiring to reduce resist exposure further improves surface smoothness.
At such requirement, to improve surface smoothness is purpose, for seeking to reduce the damage (cut etc.) that the grinding charge surface produces, the Japanese Patent spy opens 2000-15560 communique, Japanese Patent spy and opens 2001-271058 communique, Japanese Patent spy and open 2003-188122 communique or Japanese Patent spy and open the 2003-155471 communique and disclose the lapping liquid slip that the oversize particle number is minimized, and the Japanese Patent spy opens the manufacture method that 2002-97387 communique or Japanese patent laid-open 11-57454 communique disclose the lapping liquid slip that the oversize particle number is minimized.Moreover, to improve surface smoothness is purpose, for the microcosmic percent ripple of seeking to reduce the grinding charge surface or reduce microcosmic indenture (micropit), the Japanese Patent spy opens 2004-204151 communique, Japanese Patent spy and opens 2004-259421 communique or Japanese Patent spy and open the 2004-204155 communique and disclose the grinding Liquid composition that the size-grade distribution to polishing particles limits.
Even so, the grinding Liquid composition that still requires exploitation to adapt with heavy body more, highly integrated such further densification.
Summary of the invention
Be that main points of the present invention relate to:
[1] a kind of grinding Liquid composition, it contains abrasive substance and water, pH value are 0.1~7, and meets the following conditions:
(1) at every 1cm 3Grinding Liquid composition in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(2) polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the grinding Liquid composition.
[2] contain abrasive substance and water, be used to allocate the polishing particles mixed liquid of above-mentioned [1] described grinding Liquid composition, it meets the following conditions:
(i) at every 1cm 3The polishing particles mixed liquid in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(ii) the polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the polishing particles mixed liquid.
[3] a kind of manufacture method with above-mentioned [1] described grinding Liquid composition of following refining step,
(I) filter the operation made from extra care preceding grinding Liquid composition and obtaining the intermediate filtered thing with deep layer type filter (depth-type filter), and
(II) filter the intermediate filtered thing with pleated filter (pleated type filter) and obtain the operation of grinding Liquid composition,
Wherein in operation I, the fluctuating range of filter inlet pressure is 50kPa or following.
[4] a kind of manufacture method with above-mentioned [2] described polishing particles mixed liquid of following refining step,
(I ') filter the operation made from extra care preceding polishing particles mixed liquid and obtaining the intermediate filtered thing with the deep layer type filter, and
(II ') filters the intermediate filtered thing with pleated filter and obtains the operation of polishing particles mixed liquid,
Wherein in operation I ', the fluctuating range of filter inlet pressure is 50kPa or following.
[5] a kind of manufacture method of substrate, it has the operation of using above-mentioned [1] described grinding Liquid composition and grinding substrate by shredder.
Embodiment
The surfaceness that the solution of the present invention 1 relates to the grinding charge after a kind of grind is little, can obviously reduce aspect densification as the nanometer cut of important factor in order and the grinding Liquid composition that can grind in the mode of economy; Relate to the polishing particles mixed liquid that in this grinding Liquid composition of allotment, uses; And relate to a kind of manufacture method with substrate of the operation of using this grinding Liquid composition.
The solution of the present invention 2 relates to a kind of manufacture method, the polishing particles mixed liquid that it can make this grinding Liquid composition and use in this grinding Liquid composition in allotment in the mode of economy.
The solution of the present invention 3 relates to a kind of manufacture method with substrate of following grinding step, promptly in the grinding step of precise part substrates such as storage hard disk and semiconductor element, can obviously reduce aspect densification nanometer cut, and can grind in the mode of economy as important factor in order.
For example, by in the grinding step of densification or Highgrade integration usefulness precise part substrate, using grinding Liquid composition of the present invention, thereby produced following effect: can realize economic grinding rate, the surface smoothness of grinding metacoxa is good, and can obviously reduce trickle nanometer cut, thereby the present invention can produce the good high-quality magnetic disc substrate of surface texture and semiconductor element with precise part substrates such as substrates.
In addition, the manufacture method of the application of the invention has produced following effect: can not damage production efficiency and the polishing particles mixed liquid that produces this grinding Liquid composition or use in this grinding Liquid composition in allotment.
Moreover, manufacture method according to substrate of the present invention has produced following effect: on the substrate after the grinding, can realize the obvious minimizing of nanometer cut, thus the present invention can produce in the mode of economy the good high-quality storage hard disk of surface texture with substrate and semiconductor element with precise part substrates such as substrates.
By following explanation, can be well understood to above-mentioned advantage of the present invention and other advantage.
[the solution of the present invention 1]
The feature of grinding Liquid composition of the present invention is: contain abrasive substance and water, the pH value is 0.1~7, and meets the following conditions: (1) is at every 1cm 3Grinding Liquid composition in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and (2) are 0.001 weight % or following more than or equal to the polishing particles of 1 μ m with respect to all polishing particles in the grinding Liquid composition, owing to have such feature, thereby can obviously reduce the nanometer cut that may cause defective to produce, thereby can provide a kind of substrate with the grinding rate of economy with good surface smoothness.Particularly use in the substrate at magnetic disc substrate or semiconductor element, this nanometer cut is a kind of important factor that influences densification or Highgrade integration.Therefore, the grinding Liquid composition of the application of the invention can be made good high-quality magnetic disc substrate of surface texture or semiconductor element substrate.
In this specification sheets so-called nanometer cut be meant the degree of depth be more than or equal to 10nm but not enough 100nm, width more than or equal to 5nm but not enough 500nm, length are the trickle damage of 100 μ m or above substrate surface.Can it be detected by atomic force microscope (AFM), and can be that " MicroMax " that VISION PSYTEC company makes measures the radical of nanometer cut to carry out quantitative evaluation with the range estimation proofing unit described in the aftermentioned embodiment.
Above-mentioned nanometer cut is not have detected surface imperfection in the past.Promptly before adopting under the situation of known method, the quality of substrate can not satisfy the requirement of heavy body more, higher integrated such densification fully.Trace it to its cause, the present inventor has carried out research with great concentration, the result find first its reason be so far can't detected " nanometer cut " minimizing abundant inadequately.
Though and do not know that the present invention reduces the mechanism of nanometer cut, but it is generally acknowledged: the condensation product of the grinding primary particle that contains in the grinding Liquid composition or thick grinding primary particle are under the effect of grinding pressure, local carry load and contacting with the grinding charge surface, thus dark nanometer cut produced.Be clear that: the particle of submicron order produces cut individually or by condensation product, so its population influences the quantity of cut, and for micron-sized particle, the then big more cut that is easy to generate more is so its weight influences the quantity of cut.In this manual, the polishing particles in the so-called grinding Liquid composition not only comprises primary particle, and comprises the aggregated particle that the primary particle cohesion forms.
In the present invention, consider that from the angle of making the high precision substrate preferable range of the nanometer cut number that is reduced that standard test records according to the nanometer cut is every 1cm 2By grinding substrate is 1.5 or following, more preferably 1.2 or following, is preferably 0.9 or following again, more preferably 0.6 or following.
In addition, the testing sequence of nanometer cut standard test is as follows.
[standard test of nanometer cut]
1. ground substrate: thickness be 1.27mm, external diameter be φ 95mm and internal diameter be the plating of φ 25mm aluminium alloy base plate that Ni-P coating is arranged (in advance with the lapping liquid that contains the alumina lap material carry out rough grinding, (AFM-Ra) becomes 10 to make surfaceness).
2. grinding condition
Rub tester: SPEED FAM company makes, 9B type twin grinder
Grinding pad: FUJIBO company makes, and urethane system smooth grinding is with filling up (thickness: 0.9mm, mean pore size: 30 μ m)
The speed of rotation of top lap: 32.5r/min
The feed rate of grinding Liquid composition (flow): 100ml/min
The concentration of abrasive substance in the grinding Liquid composition: 7 weight %
Milling time: 4min
Grind load: 7.8kPa
The piece number of the substrate that grinds: 10
3. the condition determination of nanometer cut
Testing tool: VISION PSYTEC company makes, " MicroMax VMX-2100CSP "
Light source: 2S λ (250W) and 3P λ (250W) are 100%
Inclination angle :-6 °
Multiplying power: maximum (angular field of view: the total area 1/120)
Range of observation: whole area (substrate of external diameter φ 95mm and internal diameter φ 25mm)
Aperture (iris): notch (notch)
Estimate: in the substrate that grinds through rub tester, 4 of picked at random are calculated the nanometer cut number of each real estate with existing nanometer cut sum (root) in two faces of each piece of these 4 substrates divided by 8.With the area (65.97cm of this value divided by the grinding charge of single face 2), obtain and estimate every 1cm 2The nanometer cut number of substrate.
In the grinding Liquid composition more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m at every 1cm 3In the grinding Liquid composition be 500000 or below, consider from the angle that reduces the nanometer cut, be preferably 400000 or below, more preferably 300000 or below, be preferably again 200000 or below, more preferably 100000 or below.At this, so-called " more than or equal to 0.56 μ m but less than 1 μ m " refers to the particle dia of polishing particles.
In addition, polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the grinding Liquid composition, consider from the angle that reduces the nanometer cut, be preferably 0.0008 weight % or following, 0.0007 weight % or following more preferably, be preferably 0.0006 weight % or following again, more preferably 0.0005 weight % or following.
In addition, more than or equal to the polishing particles of 3 μ m with respect to all polishing particles in the grinding Liquid composition, consider from the angle that reduces the nanometer cut, for example be 0.0008 weight % or following, be preferably 0.0007 weight % or following, more preferably 0.0006 weight % or following is preferably 0.0005 weight % or following again, more preferably 0.0004 weight % or following.
The mensuration of the polishing particles diameter in the grinding Liquid composition can adopt number counting mode (Sizing Particle Optical Sensing method) to carry out, for example can utilize that " Accusizer 780 " that U.S. ParticleSizing Systems company produces and Ku Leerte (Coulter) company produce " Coulter counter (Coulter Counter) etc. is measured.
More than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m and do not have what restriction more than or equal to 1 μ m and then more than or equal to the control method of the polishing particles content of 3 μ m, can when making grinding Liquid composition or after manufacturing, adopt general dispersion or particle to remove method.For example, can adopt the dispersion method of high pressure diverting devices such as using high speed dispersing device or high-pressure homogenizer, perhaps can adopt the settling process of using centrifugal separating device etc. and use the secondary filter of filtration medium and filtration method such as ultrafiltration.When adopting these methods to handle, can handle individually separately, also can make up two or more and handle, about the processing sequence of combination also without any restriction.In addition, about the treatment condition and the number of processes of these methods, also can carry out appropriate selection during use.
Among these methods, as efficient and cost-effective remove the method for the condensation product or the thick grinding primary particle of the grinding primary particle that contains in the grinding Liquid composition, can be suitable for the secondary filter of using strainer.
Filtration medium as secondary filter is used can use deep layer type filter and pleated filter.As the deep layer type filter, except that pocket type (Sumitomo 3M company product etc.), can also use cartridge type (Advantec Japan company, Japanese Pall company, CUNO company, Daiwabo company product etc.) strainer.
So-called deep layer type filter has following feature: the pore structure of filtration medium is that inlet is thick and outlet side is thin, and is to be tapered continuously or by stages from inlet side to outlet side.That is to say, even if in oversize particle, also be that big particle is hunted down near inlet side, and little particle is hunted down near outlet side.In addition, because divide multistage to catch, so thick particle, just easy being removed more at the thickness direction of strainer.The shape of deep layer type filter can be the pocket type of bag shape, also can be the cartridge type of hollow cylindrical.In addition, the filtration medium with above-mentioned feature only is shaped to accordion and the strainer that obtains, owing to have the function of deep layer type filter, thereby be classified as the deep layer type filter.
So-called pleated filter is meant the core strainer that filtration medium is shaped and is processed into accordion and makes it to become hollow cylindrical, it is characterized in that: different with the deep layer type filter of catching in the various piece of thickness direction, the pleated filter thinner thickness of filtration medium, be commonly considered as the master that is captured as with filter surfaces, in general, its filtering accuracy is higher.
Filter method can be repeatedly filtering Recycle design, also can be one way (one-pass) mode.In addition, also can adopt the intermittent mode that carries out the one way mode repeatedly.About leading to the liquid method, because need pressurization, preferably with the logical liquid of pump, the one way mode then except with the pump, can also adopt the pressure filtration method in the importing jars such as air pressure in a looping fashion in institute.
By suitably selecting the pore structure of strainer, can control the particle diameter of the oversize particle of removing.
Filter system can be one section filtration, also can be that the multistage that combines filters.Filter about multistage, the aperture by suitably selecting strainer and the structure of filtration medium, and then suitably select the processing sequence of this strainer, thus have the particle diameter control (filtering accuracy) that can improve the oversize particle of removing and the effect of economy.That is to say that the strainer that pore structure is big is used for leading portion, the strainer that pore structure is thin is used for back segment, then makes the as a whole effect that can prolong filter life that has.About the structure of filtration medium, when the deep layer type is used for leading portion, fold-type is used for back segment, then make the as a whole effect that can prolong filter life that has.
As employed abrasive substance among the present invention, can use the abrasive substance that in grinding, uses usually, can list metal, metal or metalloid carbide, nitride, oxide compound or boride, diamond etc.Metal or metalloid element belong to the element of 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or the 8th family of the periodic table of elements (long period type).Specific examples as abrasive substance, can list silicon oxide (the following silica that also is referred to as), aluminum oxide (the following alumina that also is referred to as), silicon carbide, diamond, manganese oxide, magnesium oxide, zinc oxide, titanium oxide (the following titanium dioxide that also is referred to as), cerium oxide (the following ceria that also is referred to as), zirconium white etc., consider from the angle that improves grinding rate, preferably use among them a kind or multiple.Wherein silica, alumina, titanium oxide, ceria, zirconium white etc. are applicable to the semiconductor element grinding of precise parts such as substrate and magnetic disc substrate with substrate.
The angle that becomes the nanometer cut of surface imperfection from minimizing is considered, polishing particles is preferably colloidal particle and pyrolysis particle, wherein preferred especially colloidal particle, for example can list colloidal silica particle, colloid cerium oxide particles, colloidal alumina particle, colloid Titanium particles, wherein the colloidal silica particle is more suitable.The colloidal silica particle for example can obtain by the manufacture method that is generated by silicate aqueous solution.In addition, also can use those to carry out the polishing particles of finishing or surface modification with functional group, perhaps those have carried out the polishing particles of composite particlesization etc. with tensio-active agent and other abrasive substance.
From the angle that reduces the nanometer cut with reduce surfaceness (roughness arithmetic average deviation value: Ra, peak-to-valley value: angle Rmax) considers that the median size of the primary particle of abrasive substance is preferably 1~50nm.Consider that from the angle that improves grinding rate more preferably 3~50nm is preferably 5~40nm, more preferably 5~30nm more simultaneously.
The median size of the primary particle of abrasive substance can adopt the method obtained by the observable image of transmission electron microscope (TEM) or volumetry, BET method, as utilizing separately method to survey periodic median size and obtain.
The content of abrasive substance in grinding Liquid composition during use is considered from the angle that improves grinding rate, be preferably 0.5 weight % or more than, more preferably 1 weight % or more than, be preferably again 3 weight % or more than, more preferably 5 weight % or more than.In addition, improve the angle of surface quality from mode and consider that be preferably 20 weight % or following, more preferably 15 weight % or following are preferably 13 weight % or following again, more preferably 10 weight % or following with economy.Therefore, from the angle consideration that improves grinding rate and improve surface quality in the mode of economy, this content is preferably 0.5~20 weight %, and more preferably 1~15 weight % is preferably 3~13 weight % again, more preferably 5~10 weight %.Among content when content when this content of abrasive substance can be the grinding Liquid composition manufacturing or use any.As a rule, grinding Liquid composition is made into concentrated solution usually, then in use with its dilution.
As water used in the present invention, can list ion exchanged water, distilled water, ultrapure water etc.The content of water is equivalent to deduct from 100 weight % the surplus of gained behind abrasive substance and other composition, is preferably 60~99 weight %, more preferably 80~97 weight %.
The pH value of grinding Liquid composition of the present invention is 0.1~7.Compare with acidity, in alkaline grinding Liquid composition, obviously produce the nanometer cut.Though and the mechanism of production of unclear described nanometer cut, but can know reason by inference is: under alkaline atmosphere, polishing particles produces the intensive repulsive interaction because of surface charge each other, cause the condensation product or the thick grinding primary particle of the grinding primary particle that contains in the grinding Liquid composition can not form tight filling at grinding part, thereby under the grinding pressure effect, make grinding charge bear local load easily.The pH value preferably decides according to the kind and the desired characteristic of grinding charge, when the material of grinding charge is metallic substance, consider from the angle that improves grinding rate, the pH value be preferably 6 or below, more preferably 5 or below, be preferably again 4 or below.In addition, to the influence of human body and prevent that the corrosive angle of milling apparatus from considering, the pH value be preferably 0.5 or more than, more preferably 1 or more than, be preferably again 1.4 or more than.Particularly the aluminium alloy base plate that nickel-phosphorus (Ni-P) coating is arranged as plating, the material of grinding charge be the precise part of metallic substance with in the substrate, consider that from above-mentioned angle the pH value is preferably 0.5~6, more preferably 1.0~5, be preferably 1.4~4 again.
The pH value can be regulated with following acid and salt.Specifically, can list mineral acid or their salt such as nitric acid, sulfuric acid, nitrous acid, persulfuric acid, hydrochloric acid, perchloric acid, phosphoric acid, phosphonic acids, phospho acid, tetra-sodium, tripolyphosphate, thionamic acid; 2-amino-ethyl phosphonic acids, 1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid, amino three (methylene phosphonic acids), ethylene diamine four (methylene phosphonic acid), diethylenetriamine five (methylene phosphonic acid), ethane-1,1-di 2 ethylhexyl phosphonic acid, ethane-1,1,2-tri methylene phosphonic acid, ethane-1-hydroxyl-1,1-di 2 ethylhexyl phosphonic acid, ethane-1-hydroxyl-1,1,2-tri methylene phosphonic acid, ethane-1,2-dicarboxyl-1,2-di 2 ethylhexyl phosphonic acid, methane hydroxyethylidene diphosphonic acid, 2-phosphinylidyne butane-1,2-dicarboxylic acid, 1-phosphinylidyne butane-2,3, organic phospho acid or their salt such as 4-tricarboxylic acid, Alpha-Methyl phosphono succsinic acid; Aminocarboxylic acid or their salt such as L-glutamic acid, pyridine carboxylic acid, aspartic acid; Carboxylic acids such as oxalic acid, nitroacetic acid, toxilic acid, oxaloacetic acid or their salt etc.Wherein, consider preferred mineral acid, organic phospho acid and their salt from the angle that reduces the nanometer cut.
In addition, in mineral acid or its salt, more preferably nitric acid, sulfuric acid, hydrochloric acid, perchloric acid or their salt; In organic phospho acid or its salt, more preferably 1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid, amino three (methylene phosphonic acids), ethylenediamine tetraacetic (methylene phosphonic acid), Diethylenetriaminee (DETA) five (methylene phosphonic acid) or their salt.These acid or its salt can use separately, also it two or more can be mixed use.
As the counter ion (positively charged ion) of these salt, not what special qualification specifically, can list metal ion, ammonium ion, alkyl phosphate ion etc.As the specific examples of metal, can list the metal that belongs to the periodic table of elements (long period type) 1A, 1B, 2A, 2B, 3A, 3B, 4A, 6A, 7A or the 8th family.Consider preferred ammonium ion or belong to the metal ion of 1A family from the angle that reduces the nanometer cut.
In addition, in grinding Liquid composition of the present invention, can mix other component as required.For example can list thickening material, dispersion agent, rust-preventive agent, alkaline matter, tensio-active agent etc.In addition, though according to the difference of the material of grinding charge and difference can not limit without exception, in general, consider, in metallic substance, can add oxygenant from the angle that improves grinding rate.As oxygenant, can list hydrogen peroxide, permanganic acid, chromic acid, nitric acid, peroxy acid, oxygen acid or their salt and oxidisability metal-salt etc.
Grinding Liquid composition of the present invention with above-mentioned formation can be allocated in the following manner, promptly adopts known method that above-mentioned each composition is mixed.
As the concocting method of grinding Liquid composition, for example can enumerate following two kinds:
(1) with after polishing particles mixed liquid and the water mixing, the method for adding other composition more therein, and
(2) with after other composition and the water mixing, the method for adding the polishing particles mixed liquid more therein.
Wherein, consider, preferably allocate grinding Liquid composition of the present invention by the following method from the angle of economy, at first, as concentrated solution, allotment contains the polishing particles mixed liquid (option A-1) of abrasive substance and water, and wherein said polishing particles mixed liquid meets the following conditions:
(i) at every 1cm 3The polishing particles mixed liquid in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(ii) the polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the polishing particles mixed liquid.Then, in this polishing particles mixed liquid, mix aforesaid other composition.
In addition, consider, preferably other composition and water mixed the back, add the method for polishing particles mixed liquid (option A-1) (2) therein again from the angle of the dispersion stabilization of abrasive substance.
In addition, in the method for (1), other composition can be as required, with being used after an amount of water dilution.
Therefore, the present invention also relates to the polishing particles mixed liquid.
As the polishing particles mixed liquid, can be those concocting method that is used for above-mentioned grinding Liquid composition (1) or (2), except that such scheme A-1, for example can also list following scheme:
The polishing particles mixed liquid of the option A-1 that (option A-2) further meets the following conditions:
(iii) the polishing particles more than or equal to 3 μ m is 0.0008 weight % or following with respect to all polishing particles in the polishing particles mixed liquid;
The median size of the primary particle of (option A-3) abrasive substance is the polishing particles mixed liquid of option A-1 or the option A-2 of 1~50nm;
The content of abrasive substance is the polishing particles mixed liquid of option A-1~A-3 of 1~60 weight % in (option A-4) polishing particles mixed liquid;
(option A-5) abrasive substance is the polishing particles mixed liquid of the option A-1~A-4 of colloidal silica;
(option A-6) can be used for allocating the polishing particles mixed liquid of the option A-1~A-5 of polishing composition for magnetic disk substrate;
(option A-7) can be used for allocating the polishing particles mixed liquid of the option A-1~A-6 of following grinding Liquid composition, and wherein said grinding Liquid composition is every 1cm by the nanometer cut number that is ground substrate that standard test records 2Substrate is 1.5 or following.
Content as abrasive substance in the polishing particles mixed liquid, consider from the angle that improves grinding rate, be preferably 1 weight % or more than, more preferably 5 weight % or more than, be preferably again 10 weight % or more than, in addition, improve the angle of surface quality from mode and consider with economy, be preferably 60 weight % or following, more preferably 50 weight % or following.Therefore, this content is preferably 1~60 weight %, and more preferably 5~50 weight % are preferably 10~50 weight % again.
In addition, content as water in the polishing particles mixed liquid, consider from the angle of the flowability of polishing particles mixed liquid, be preferably 40 weight % or more than, more preferably 50 weight % or more than, in addition, consider from the angle that improves grinding rate, be preferably 99 weight % or following, more preferably 95 weight % or following are preferably 90 weight % or following again.Therefore, this content is preferably 40~99 weight %, and more preferably 50~95 weight % are preferably 50~90 weight % again.
Described polishing particles mixed liquid for example is applicable to the grinding Liquid composition of the following scheme 1~7 of allotment.
(scheme 1) meets the following conditions, contains abrasive substance and water, pH value is 0.1~7 grinding Liquid composition:
(1) at every 1cm 3Grinding Liquid composition in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(2) polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the grinding Liquid composition.
The grinding Liquid composition of the scheme 1 that (scheme 2) further meets the following conditions:
(3) polishing particles more than or equal to 3 μ m is 0.0008 weight % or following with respect to all polishing particles in the grinding Liquid composition;
The median size of the primary particle of (scheme 3) abrasive substance is the grinding Liquid composition of scheme 1 or the scheme 2 of 1~50nm;
The content of abrasive substance is the grinding Liquid composition of the scheme 1~3 of 0.5~20 weight % in (scheme 4) grinding Liquid composition;
(scheme 5) abrasive substance is the grinding Liquid composition of the scheme 1~4 of colloidal silica;
(scheme 6) is used for the grinding Liquid composition of the scheme 1~5 of magnetic disc substrate;
(scheme 7) is every 1cm by the nanometer cut number that is ground substrate that standard test records 2Substrate is the grinding Liquid composition of 1.5 or following scheme 1~6.
Grinding Liquid composition of the present invention for example is fed into the organic polymer class abrasive cloth of non-woven fabrics form etc. (grinding pad) and is ground between the substrate, that is to say, supply with grinding Liquid composition to the substrate abrasive surface that the abrasive disk that is pasted with grinding pad is folded, under predetermined pressure, abrasive disk and/or substrate are moved, by this grinding Liquid composition on one side and substrate contacts, Yi Bian be applied to grinding step.Can obviously suppress the generation of nanometer cut by this grinding.
For effectively reducing the nanometer cut, can use grinding Liquid composition of the present invention to grind and be ground substrate; Perhaps mix each and become to assign to allocate grinding Liquid composition,, use this grinding Liquid composition to grind then and ground substrate so that make it to have the composition of grinding Liquid composition of the present invention.Thus, can produce the surface imperfection substrate that particularly the nanometer cut is able to obvious minimizing and then surfaceness is low, surface quality is good that is ground substrate.Therefore, the invention still further relates to the manufacture method of substrate, this manufacture method has the operation of using grinding Liquid composition of the present invention and grinding substrate by shredder.
Grinding Liquid composition of the present invention is specially adapted to the manufacturing of precise part with substrate.For example, be applicable to of the grinding of precise parts such as indicator substrate, photomask base plate, optical lens, optical mirror, optical prism, semiconductor substrate such as disk, photomagneto disk, CD with substrate.In the manufacturing of semiconductor substrate, can in the operations such as formation operation of the planarization operation of the grinding step of silicon wafer (naked wafer), the formation operation that embeds element isolation film, interlayer dielectric, the formation operation that embeds metallic circuit, embedding electric capacity, use grinding Liquid composition of the present invention.
Grinding Liquid composition of the present invention is effective especially in grinding step, and grinding step in addition equally also is applicable to and for example polishes (lapping) operation etc.
The material of the grinding charge that is suitable for using as grinding Liquid composition of the present invention, for example can list metal or metalloid or their alloys such as silicon, aluminium, nickel, tungsten, copper, tantalum, titanium, glassy mass such as glass, glassy carbon, decolorizing carbon, stupaliths such as aluminum oxide, silicon-dioxide, silicon nitride, tantalum nitride, titanium carbide, resins such as polyimide resin etc.Wherein, be applicable to that it is the quilt grinding substrate of the alloy of principal constituent that metals such as containing aluminium, nickel, tungsten, copper reaches with these metals.For example be applicable to more that plating has glass substrates such as the aluminium alloy base plate of Ni-P and crystallized glass, chilled glass, is applicable to that further plating has the aluminium alloy base plate of Ni-P.
Having the grinding charge that the shape of planar section and lens etc. have a shape of curvature portion for the shape of grinding charge and without particular limitation, for example discoid, tabular, thick plate-like, prism-shaped etc. can use grinding Liquid composition of the present invention to grind.Wherein, especially preferably discoid grinding charge is ground.
About surfaceness as the yardstick of surface smoothness, its evaluation method is also unrestricted, can be that 10 μ m or the following detectable roughness of shortwave are estimated at wavelength for example, and represent with roughness arithmetic average deviation value (AFM-Ra) with atomic force microscope (AFM).Grinding Liquid composition of the present invention is applicable to the grinding step of magnetic disc substrate, and then is applicable to that making the roughness arithmetic average deviation value (AFM-Ra) of grinding metacoxa is 2.0 or following grinding step.
In the manufacturing process of substrate, when having a plurality of grinding step, preferably use grinding Liquid composition of the present invention in second operation or follow-up operation, consider from the angle of obvious minimizing nanometer cut and surfaceness and acquisition good surface smooth finish, further preferably in the smooth grinding operation, use.Have under the situation of a plurality of grinding steps, so-called smooth grinding operation is meant the grinding step that at least one is last.
At this moment, sneak into, also can use other shredder respectively, and when using other shredder respectively for fear of the abrasive substance and the grinding Liquid composition of front operation, preferably in each operation with substrate cleaning.Wherein, there is no special qualification for shredder.The substrate of Zhi Zaoing like this, its nanometer cut is able to obvious minimizing, and has good surface smoothness.Roughness arithmetic average deviation value (AFM-Ra) after promptly grinding is 2.0 or following for example, is preferably 1.8 or following, more preferably 1.5 or following.
In addition, before entering the grinding step that uses grinding Liquid composition of the present invention, the surface texture of substrate is also without particular limitation, and the substrate that for example has AFM-Ra and be 10 or following surface texture is suitable.
As long as employed abrasive substance in the manufacture method as substrate of the present invention is identical with employed abrasive substance in the above-mentioned grinding Liquid composition.In a plurality of grinding steps, above-mentioned grinding step preferably carries out in second operation or follow-up operation, further preferably carries out in the smooth grinding operation.
The substrate that uses the manufacture method of grinding Liquid composition of the present invention or substrate of the present invention as described above and make; its surface smoothness height; roughness arithmetic average deviation value (AFM-Ra) is 2.0 or following for example, is preferably 1.8 or following, more preferably 1.5 or following.
In addition, the substrate of manufacturing is the few substrate of nanometer cut.Therefore, this substrate for example under the situation for the storage hard disk substrate, can reach such requirement, and promptly recording density reaches the 120G/ inch 2, and then reach the 160G/ inch 2, under the situation that is semiconductor substrate, this substrate can reach such requirement, and promptly live width (wire width) is 65nm, and then is 45nm.
Grinding Liquid composition of the present invention can be allocated as described above, but according to the manufacture method of the following stated, just can obtain in the mode of economy under the prerequisite of not damaging production efficiency.
Therefore, the invention still further relates to the manufacture method that to make the grinding Liquid composition of this grinding Liquid composition in the mode of economy.
[the solution of the present invention 2]
The manufacture method of grinding Liquid composition of the present invention, it is the manufacture method with above-mentioned grinding Liquid composition of following refining step, it is characterized in that: in operation I, the fluctuating range of filter inlet pressure is 50kPa or following, and this manufacture method can provide a kind of can obviously reduce nanometer cut that may cause the defective generation and the substrate with good surface smoothness.
(I) filter the operation made from extra care preceding grinding Liquid composition and obtaining the intermediate filtered thing with the deep layer type filter, and
(II) filter the intermediate filtered thing with pleated filter and obtain the operation of grinding Liquid composition.
As previously mentioned, use in the substrate at storage hard disk substrate or semiconductor element especially, this nanometer cut is a kind of important factor that influences densification or Highgrade integration.Therefore, the above-mentioned grinding Liquid composition that the application of the invention obtains can be made surface texture good high-quality storage hard disk substrate or semiconductor element substrate.
As previously mentioned, though clearly can reduce the nanometer cut by the thick polishing particles that reduces the specific size that exists in the grinding Liquid composition,, use known technology in the past fully reduce this thick polishing particles industrial be irrealizable.For example, though screen cloth type filters such as employing film filter carry out condensation product or the thick polishing particles that filtering operation can be removed polishing particles, industrial can not the use.In addition,, stop up, be difficult to obtain the purified grinding Liquid composition in the mode of economy because of oversize particle causes mesh though only can fully remove the condensation product or the thick polishing particles of polishing particles with the filtration operation of pleated filter.
The present invention uses the deep layer type filter earlier, then uses pleated filter to filter, and the fluctuating range with deep layer type filter inlet pressure when filtering is adjusted into specific scope, produced following effect thus, promptly can obtain the grinding Liquid composition that the nanometer cut is obviously reduced in the mode of economy.
Wherein, in the filtration of strainer, if cause effective mesh (sieve opening) of filtration medium enlarges because of pressurization, the oversize particle that maybe should catch of then having caught can pass through strainer, and on the other hand, cause the reduction of filtering accuracy because of coming off of filtering material (fiber etc.) sometimes.For preventing the generation of these phenomenons, each strainer manufacturer's recommended: usually the pressure reduction with filter inlet pressure and top hole pressure is controlled at below the prescribed value.But,, also usually cause the reduction of filtering accuracy even pressure reduction is controlled at the following situation of prescribed value.So the present patent application people has carried out research with great concentration, the result is surprised to find: if produce the pulsation of liquor charging during liquor charging, then the fluctuating range of filter inlet pressure increases, and causes the reduction of filtering accuracy.
So, the present patent application people has further carried out research with great concentration, the result finds first: use the deep layer type filter earlier, then use pleated filter to filter, and the fluctuating range of deep layer type filter inlet pressure is suppressed in the value of regulation, by this in the manufacturing process of grinding Liquid composition, can improve capture rate and the precision of strainer, thereby even the oversize particle amount grinding Liquid composition that is subjected to extremely stringent regulations can create also as in the present invention to oversize particle.
Be applied to the poor of the maximum value of the pressure on the strainer and minimum value when in the present invention, the fluctuating range of so-called deep layer type filter inlet pressure is meant liquor charging.When using a plurality of deep layer type filter, this fluctuating range is meant the value on the deep layer type filter that is positioned at upstream.
The fluctuating range of operation I mid-deep strata type filter inlet pressure is 50kPa or following, making the oversize particle of operation II remove the angle that load alleviated from the raising owing to the filtering accuracy of operation I considers, be preferably 40kPa or following, more preferably 30kPa or following.The fluctuating range of filter inlet pressure for example can be measured by the following method, promptly uses the tensimeter that is installed on the filter housing, the maximum value of pressure and minimum value when reading liquor charging.
As the method that reduces above-mentioned pressure surge amplitude, one has the method for the pulsation that minimizing produces by liquid-feeding pump, for example carries out the method for liquor charging, can use in the method that pump outlet portion is provided with snubber equipressure snubber assembly for the pulsation that prevents liquid-feeding pump with the little pulseless pump of pulsing.In addition, the pulsation that is filtered thing between also promising minimizing liquid-feeding pump and the filter inlet portion and increase the method for piping volume for example can be used in that the pipeline between method, lengthening pump and the strainer of reservoir etc. or the method for overstriking caliber are set between pump discharge part and the strainer.In addition, these methods are used separately separately or by appropriate combination filtration unit and filtration condition, can further be reduced the fluctuating range of pressure.
In the refining step of grinding Liquid composition, as the deep layer type filter among the operation I, as long as with control above-mentioned grinding Liquid composition in oversize particle content the time employed strainer identical.
Deep layer type filter among the operation I can use one section, also can be used in combination multistage (for example configured in series).In addition, also can make up pocket type and cartridge type uses.It is more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m that multistage filters according to particle diameter in the grinding Liquid composition before refining, suitably select the aperture of suitable strainer and the structure of filtration medium, and then suitably select the processing sequence of this strainer, can improve particle diameter control (filtering accuracy) and the economy of the oversize particle of removing by this.That is to say, compare, then to have the effect that can prolong filter life as whole manufacturing process if the strainer that pore structure is big is used for leading portion (upstream side) with the strainer that pore structure is thin.
As the pleated filter among the operation II, generally can use the filtration medium core strainer be processed into accordion and make it to become hollow cylindrical (Advantec Japan company, Japanese Pall company, CUNO company, Daiwabo company etc.) that is shaped.
The pleated filter of using among the operation II can be used one section, also can be used in combination multistage (for example configured in series).In addition, it is more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m that multistage filters according to the particle diameter in the intermediate filtered thing after the operation I, suitably select the aperture of suitable strainer and the structure of filtration medium, and then suitably select the processing sequence of this strainer, can improve the production efficiency of grinding Liquid composition of the present invention by this.That is to say, compare,, then do the as a whole life-span that can prolong strainer if the strainer that pore structure is big is used for leading portion (upstream side) with the strainer that pore structure is thin.Moreover the strainer of Shi Yonging is arranged to the strainer of multistage with the aperture subsequently, can make the quality of grinding Liquid composition more stable by this.
In whole filtration operation, if after using the deep layer type filter, re-use pleated filter, then do the as a whole life-span that can prolong strainer, can produce grinding Liquid composition of the present invention in the mode of economy.
The aperture of these deep layer type filters and pleated filter generally is expressed as can remove 99% filtering accuracy, for example, so-called 1.0 μ m apertures, it is the particle of 1.0 μ m that expression can be removed 99% diameter.
The aperture of the employed deep layer type filter of operation I of the present invention, the angle of removing load of the oversize particle from alleviate operation II considers that be preferably 5.0 μ m or following, more preferably 3.0 μ m or following are preferably 2.0 μ m or following again.
In addition, when the deep layer type filter that uses in making operation I becomes multistage (for example configured in series), if the aperture of the final strainer that uses is submicron or following, then can further alleviate the load of removing of oversize particle among the operation II, thereby production efficiency can access further and improves.
The aperture of the employed pleated filter of operation II of the present invention considers that from the angle that reduces oversize particle be preferably 1.0 μ m or following, more preferably 0.8 μ m or following is preferably 0.6 μ m or following again, more preferably 0.5 μ m or following.
Every 1cm behind the operation I 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be preferably 1000000 or below, the angle of removing load of number of particles is considered from alleviate operation II, more preferably 800000 or below, be preferably again 700000 or below, more preferably 600000 or below.
Particle diameter is more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m in the grinding Liquid composition behind the operation II, every 1cm 3Be 500000 or below, consider from the angle that reduces the nanometer cut, be preferably 400000 or below, more preferably 300000 or below, be preferably again 200000 or below, more preferably 100000 or below.
Filter method as operation I and operation II, can use with control above-mentioned grinding Liquid composition in oversize particle content the time the identical filter method of filter method that uses, the pressure filtration method in the importings such as air pressure jar can be reduced the fluctuating range of filter inlet pressure.
Be supplied to every 1cm of operation II 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be preferably 1000000 or below, for realizing this goal, except that by the operation I, before operation I and/or general dispersion or particle also can be set afterwards remove operation.For example also can adopt the dispersion method of high pressure diverting devices such as using high speed dispersing device or high-pressure homogenizer, perhaps can adopt the settling process of using centrifugal separating device etc.When adopting these methods to handle, can handle individually separately, also can make up two or more and handle, about the processing sequence of combination also without any restriction.In addition, about the treatment condition and the number of processes of these methods, also can carry out appropriate selection during use.
As the supply pressure among operation I and the operation II to strainer, consider from the angle of filtering accuracy, preferably under the pressure that the strainer that is not more than use is recommended, filter.In addition, about the pressure reduction of filter inlet pressure and top hole pressure, because by increasing pressure reduction, effective mesh of filtration medium enlarges and becomes the filtering accuracy main reasons for decrease, therefore, preferably is controlled at below the prescribed value.
As the pressure reduction of the deep layer type filter among the operation I, consider that from the angle of filtering accuracy be preferably 200kPa or following, more preferably 170kPa or following is preferably 150kPa or following again.As the pressure reduction of the pleated filter among the operation II, consider that from the angle of filtering accuracy be preferably 250kPa or following, more preferably 200kPa or following is preferably 170kPa or following again.In addition, the pressure reduction that is applied to during liquor charging on the strainer for example can use the tensimeter that is installed in the entrance and exit on the filter housing, by the difference of separately mean value and obtain.
In addition, as the filtration condition except that above-mentioned of operation I and operation II, not special the qualification.
Use among the present invention refining before grinding Liquid composition refer to the composition that enters before the above-mentioned operation I, contains the abrasive substance that comprises polishing particles, for example can list mixed grinding material and water, also mix the composition of other composition manufacturing as required.In addition, as the state of the grinding Liquid composition before refining, preferred polishing particles is in dispersion state.
In the present invention, be supplied to operation I and operation II, just can make grinding Liquid composition by the grinding Liquid composition before will making with extra care.Specifically, the composition of mixed grinding material, water and other composition manufacturing is supplied to operation I and operation II, the refining preceding grinding Liquid composition that perhaps will contain abrasive substance and water is supplied to operation I and operation II, in resulting filtrate, mix other composition afterwards, just can make grinding Liquid composition thus.
In addition, because the present invention is the manufacture method of above-mentioned grinding Liquid composition, so the abrasive substance that uses among the present invention, polishing particles and water and their content can be identical with abrasive substance, polishing particles and the water and their content that use in the above-mentioned grinding Liquid composition.
What can be used among the present invention that acid that the pH value of grinding Liquid composition regulates or salt or alkali also can be with the pH value adjusting that can be used for above-mentioned grinding Liquid composition is identical.In addition, also can cooperate other composition, wherein said other composition is identical with the composition that can be engaged in the above-mentioned grinding Liquid composition as required.
As the example of the grinding Liquid composition after the operation II of the present invention's manufacturing, for example can list the grinding Liquid composition of (scheme 1~7) in the above-mentioned grinding Liquid composition.
In the present invention, the grinding Liquid composition after the operation II meets the following conditions (2), but considers that from the angle that reduces the nanometer cut (3) preferably further satisfy condition:
(2) particle diameter is 0.001 weight % or following for the polishing particles more than or equal to 1 μ m with respect to all polishing particles in the grinding Liquid composition.
(3) particle diameter is 0.0008 weight % or following for the polishing particles more than or equal to 3 μ m with respect to all polishing particles in the grinding Liquid composition.
The above-mentioned grinding Liquid composition that adopts manufacture method of the present invention to obtain can be used as described above.
In addition, before the grinding step that enters the grinding Liquid composition after using operation II of the present invention, the surface texture of substrate is also without particular limitation, and the substrate that for example has AFM-Ra and be 10 or following surface texture is suitable.
The substrate of the grinding Liquid composition manufacturing that employing obtains by manufacture method of the present invention; it has good surface smoothness; roughness arithmetic average deviation value (AFM-Ra) is 2.0 or following for example, is preferably 1.8 or following, more preferably 1.5 or following.
Moreover, adopting the substrate of the grinding Liquid composition manufacturing that obtains by manufacture method of the present invention, its nanometer cut is few.Therefore, this substrate for example under the situation for the storage hard disk substrate, can reach such requirement, and promptly recording density reaches the 120G/ inch 2, and then reach the 160G/ inch 2, under the situation that is semiconductor substrate, this substrate can reach such requirement, and promptly live width is 65nm, and then is 45nm.
In addition, same with the manufacture method of grinding Liquid composition of the present invention, can not damage production efficiency and produce above-mentioned (the polishing particles mixed liquid of option A-1~A-7) in the mode of economy.
Therefore, the invention still further relates to the manufacture method that to make the polishing particles mixed liquid of above-mentioned polishing particles mixed liquid in the mode of economy.
The manufacture method of polishing particles mixed liquid of the present invention is a kind of manufacture method with above-mentioned polishing particles mixed liquid of following refining step,
(I ') filter the operation made from extra care preceding polishing particles mixed liquid and obtaining the intermediate filtered thing with the deep layer type filter, and
(II ') filters the intermediate filtered thing with pleated filter and obtains the operation of polishing particles mixed liquid, and it is characterized in that: in operation I ', the fluctuating range of filter inlet pressure is 50kPa or following.
The fluctuating range of operation I ' mid-deep strata type filter inlet pressure is 50kPa or following, making the oversize particle of operation II ' remove the angle that load alleviated from the raising owing to the filtering accuracy of operation I ' considers, be preferably 40kPa or following, more preferably 30kPa or following.As the measuring method of the fluctuating range of filter inlet pressure and the method that reduces this pressure surge amplitude, can be identical with the manufacture method of above-mentioned grinding Liquid composition.
In the refining step of polishing particles mixed liquid, the strainer of use and the use-pattern of this strainer also can be identical with the manufacture method of above-mentioned grinding Liquid composition.
Particle diameter is more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m in the intermediate filtered thing behind the operation I ', every 1cm 3Be preferably 1000000 or below, the angle of removing load of number of particles is considered from alleviate operation II ', more preferably 800000 or below, be preferably again 700000 or below, more preferably 600000 or below.
Particle diameter is more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m in the polishing particles mixed liquid behind the operation II ', every 1cm 3Be 500000 or below, consider from the angle that reduces the nanometer cut, be preferably 400000 or below, more preferably 300000 or below, be preferably again 200000 or below, more preferably 100000 or below.
Polishing particles more than or equal to 1 μ m in the polishing particles mixed liquid behind the operation II ' is 0.001 weight % or following with respect to all polishing particles, consider from the angle that reduces the nanometer cut, be preferably 0.0008 weight % or following, 0.0007 weight % or following more preferably, be preferably 0.0006 weight % or following again, more preferably 0.0005 weight % or following.
In addition, in the polishing particles mixed liquid behind the operation II ' more than or equal to the polishing particles of 3 μ m with respect to all polishing particles, consider from the angle that reduces the nanometer cut, for example be 0.0008 weight % or following, be preferably 0.0007 weight % or following, more preferably 0.0006 weight % or following is preferably 0.0005 weight % or following again, more preferably 0.0004 weight % or following.
Supply with particle diameter in the intermediate filtered thing of operation II ' more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m, every 1cm 3Be preferably 1000000 or below, for realizing this goal, except that by the operation I ', also the manufacture method with above-mentioned grinding Liquid composition is the same, before and/or afterwards general dispersion or particle can be set also at operation I ' and remove operation.
In addition, the filter method of operation I ' and II ' and filtration condition also can be the same with the manufacture method of above-mentioned grinding Liquid composition.
The refining preceding polishing particles mixed liquid that uses among the present invention refers to the aqueous dispersions that enters above-mentioned operation I ' abrasive substance before.Abrasive substance and water can with above-mentioned grinding Liquid composition in use identical.In addition, as the state of the polishing particles mixed liquid before refining, preferred polishing particles is in dispersion state.
In the present invention, be supplied to operation I ' and operation II ' by the polishing particles mixed liquid before will making with extra care, just can be with the mode Production Example such as above-mentioned (the polishing particles mixed liquid of option A-1~A-7) of economy.Such polishing particles mixed liquid can be used to allocate above-mentioned grinding Liquid composition.
The invention further relates to a kind of manufacture method of substrate, in its grinding step in precise part substrates such as storage hard disk substrate or semiconductor element, has the grinding step that can obviously reduce the above-mentioned nanometer cut that aspect densification, has material impact and can grind in the mode of economy.
[the solution of the present invention 3]
The manufacture method of substrate of the present invention is characterised in that: it has following operation, promptly with every 1cm of substrate 2By milling area is 0.06cm 3/ minute or above flow, supply with above-mentioned grinding Liquid composition to the shredder that is equipped with abrasive disk, thereby substrate ground.This manufacture method can provide a kind of can obviously reduce nanometer cut that may cause the defective generation and the substrate with good surface smooth finish.As previously mentioned, this nanometer cut is used in the substrate at storage hard disk substrate or semiconductor element especially, is a kind of important factor that influences densification or Highgrade integration.Therefore, the manufacture method of the substrate of the application of the invention can be made surface texture good high-quality storage hard disk substrate or semiconductor element substrate.
The present invention illustrated already: the grinding pressure when grinding by using above-mentioned grinding Liquid composition also to control, can reduce the nanometer cut.
The grinding Liquid composition that uses among the present invention can be above-mentioned grinding Liquid composition, wherein, and Yi Xia grinding Liquid composition preferably.
That is to say, consider from the angle that reduces the nanometer cut, in the grinding Liquid composition more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be preferably 300000 or below, more preferably 200000 or below, be preferably again 100000 or below, more preferably 10000 or below.
In addition, consider from the angle that reduces the nanometer cut, polishing particles more than or equal to 1 μ m is preferably 0.0008 weight % or following with respect to all polishing particles in the grinding Liquid composition, 0.0007 weight % or following more preferably, be preferably 0.0006 weight % or following again, more preferably 0.0005 weight % or following.
In addition, consider from the angle that reduces the nanometer cut, polishing particles more than or equal to 3 μ m is preferably 0.0008 weight % or following with respect to all polishing particles in the grinding Liquid composition, 0.0007 weight % or following more preferably, be preferably 0.0006 weight % or following again, more preferably 0.0005 weight % or following further is preferably 0.0004 weight % or following.
For reducing more than or equal to 0.5 μ m but the polishing particles of less than 1 μ m, filtering etc. by strainer is effective means.For example when using the aperture to be the pleated filter of high filtering precision of 0.45 μ m, can reduce the nanometer cut, and then become condensation product or the thick polishing particles that the nanometer cut produces the polishing particles of reason and can not invade between substrate and the grinding pad in order to make, abrasive disk pressure during with grinding is adjusted into 3~50kPa, and the advantage that is had is that the nanometer cut is reduced significantly thus.
As the secondary filter filtration medium, can use deep layer type filter and pleated filter.As the deep layer type filter, the strainer that uses in the time of for example can listing the oversize particle content in the above-mentioned grinding Liquid composition of control.
Filter method can be identical with the filter method of above-mentioned grinding Liquid composition, but consider from more economic angle, can use the deep layer type filter bigger than pleated filter aperture at the leading portion of pleated filter.The aperture of deep layer type filter is preferably 10 μ m or following, and more preferably 5 μ m or following are preferably 3 μ m or following again.The aperture of pleated filter is preferably 1 μ m or following, and more preferably 0.8 μ m or following is preferably 0.6 μ m or following again, more preferably 0.5 μ m or following.
The content of abrasive substance in the grinding Liquid composition, consider from grinding the angle that vibration causes that the nanometer cut produces, for example be 1 weight % or more than, be preferably 3 weight % or more than, more preferably 5 weight % or more than, be preferably again 7 weight % or more than, in addition, consider from the angle of economy, for example be 20 weight % or following, be preferably 15 weight % or following, more preferably 13 weight % or following are preferably 10 weight % or following again.That is to say that this content for example is 1~20 weight %, be preferably 3~15 weight %, more preferably 5~13 weight % are preferably 7~10 weight % again.Among content when content when this content of abrasive substance can be the grinding Liquid composition manufacturing or use any.As a rule, grinding Liquid composition is made into concentrated solution usually, then in use with its dilution.
As abrasive substance, it can be the abrasive substance that uses in the above-mentioned grinding Liquid composition, wherein, aluminum oxide, pyrolysis method silicon oxide, colloidal silica, cerium oxide, zirconium white and titanium oxide etc. are applicable to that semiconductor wafer, semiconductor element, magnetic recording media are with the grinding of precise parts such as substrate with substrate.
Aspect improving filling ratio and obtaining smooth-flat-surface, the preferred spherical colloidal particles of the shape of abrasive substance, and then from reducing the angle consideration of the nanometer cut that may cause the surface imperfection generation, preferably colloidal silica particle of colloid cerium oxide particles, colloidal silica particle and finishing etc. wherein particularly preferably is the colloidal silica particle.In addition, the colloidal silica particle for example can adopt the manufacture method that is generated by silicate aqueous solution to obtain.The high record density memory disk that colloidal silica is applicable to best bright finish more also is specially adapted to the grinding of final grinding and semiconductor device substrate with substrate, preferably store the smooth grinding of hard disk with substrate.
The surplus of this grinding Liquid composition is a water.As its content, not what special qualification.
In addition, this grinding Liquid composition is considered from the angle of giving desirable function as long as contain abrasive substance and water at least, also can be contained compositions such as acid, salt, oxygenant.
The pH value of the grinding Liquid composition that the present invention uses is 0.1~7.The pH value surpasses at 7 o'clock, and colloidal silica is being used as under the situation of abrasive substance, and the nanometer cut increases.In general, the grinding of substrate is the result of physical grinding power and the effect of chemical grinding force balance.Specifically, by the effect of chemical grinding power, substrate surface is corroded and is worn away easily, and by the effect of physical grinding power, the corrosion part is wiped off and grinding is carried out.For example have under the situation of substrate of Ni-P at plating, the pH value surpasses at 7 o'clock, chemical grinding power very a little less than, physical grinding power plays a leading role, so not only the nanometer cut increases, and grinding rate reduces significantly.
Consider from the angle that improves grinding rate, the pH value be preferably 5 or below, more preferably 4 or below.In addition, from considering to the influence of human body and to the corrosive angle of machinery, the pH value be 0.1 or more than, be preferably 0.5 or more than, more preferably 1 or more than, be preferably again 1.4 or more than.Particularly the metal at the aluminium alloy base plate that nickel-phosphorus (Ni-P) coating is arranged with plating is in the precise part substrate processing of object, be preferably 4.5 or below, more preferably 3.5 or below.Therefore, can adjust the pH value according to the target of being considered, particularly the metal at the aluminium alloy base plate that nickel-phosphorus (Ni-P) coating is arranged with plating is in the precise part substrate processing of object, consider from above-mentioned angle, the pH value is preferably 0.1~6, more preferably 1~4.5, more preferably 1.4~3.5.
Moreover, the difference of the pH value of the grinding waste liquid after the pH value of the grinding Liquid composition before grinding and the grinding be preferably 2 or below, more preferably 1 or below, more preferably 0.5 or below.At this, grinding Liquid composition before so-called the grinding is meant grinding Liquid composition is supplied to abrasive surface grinding Liquid composition before that the grinding waste liquid after so-called the grinding refers to grinding Liquid composition is supplied to the waste liquid that substrate grinds the lapping liquid of being discharged the back.When the variation of above-mentioned pH value was big, the abrasive material that contains in the grinding Liquid composition condensed when grinding easily, and this condensation product may cause the generation of nanometer cut.On the other hand, if with this pH value be adjusted into 2 or below, then the cohesion of abrasive material is suppressed easily, thereby is more suitable for making the substrate that the nanometer cut is reduced.
For the difference that makes above-mentioned pH value be 2 or below, for example can adjust the flow of grinding Liquid composition, when the big grinding Liquid composition of the difference of using the pH value, can suppress the poor of pH value by augmented flow.
Grinding Liquid composition is supplied to the flow of shredder, is every 1cm 2Substrate be 0.06cm by milling area 3/ minute or more than.As not enough 0.06cm 3/ timesharing produces vibration because of friction resistance makes shredder greatly, increases this space of insertion such as the condensation product of polishing particles and make the increase of nanometer cut because of vibration makes the space between substrate abrasive surface and the grinding pad.From grinding the angle consideration that vibration causes that the nanometer cut produces, this flow is preferably 0.09cm 3/ minute or more than, 0.12cm more preferably 3/ minute or more than, 0.15cm more preferably 3/ minute or more than, in addition, consider from the angle of economy, be preferably 0.46cm 3/ minute or below, 0.30cm more preferably 3/ minute or below, 0.23cm more preferably 3/ minute or below.In addition, this flow is preferably 0.09~0.46cm 3/ minute, 0.12~0.30cm more preferably 3/ minute, 0.15~0.23cm more preferably 3/ minute.
During grinding, to the organic polymer class abrasive cloth of non-woven fabrics form etc. (grinding pad) with ground and supply with grinding Liquid composition between the substrate, that is to say, to supplying with grinding Liquid composition by the substrate abrasive surface that is pressed on the abrasive disk that is pasted with grinding pad, under predetermined pressure, abrasive disk and/or substrate are moved, by this grinding Liquid composition on one side and substrate contacts, Yi Bian be applied to grinding step.
So-called abrasive disk pressure among the present invention is meant the abrasive disk pressure that is applied to when grinding on the abrasive surface that is ground substrate.If this abrasive disk pressure preferably is adjusted into the scope of 3~50kPa, then can infer because the space appropriateness between substrate abrasive surface and the grinding pad narrows down, thereby the condensation product etc. that may cause the polishing particles of nanometer cut is difficult to flow on the substrate, thereby the nanometer cut is reduced.For example abrasive disk pressure is 3kPa or when above because the condensation products of polishing particles etc. are difficult to enter in the space between substrate abrasive surface and the grinding pad, institute so that the nanometer cut reduced.In addition, making abrasive disk pressure is 50kPa or when following, because friction resistance is little, the vibration of shredder maintains on the level of appropriateness, dwindle by the substrate abrasive surface of vibration generation and the space between the grinding pad, so be difficult to produce the insertion of the condensation product etc. of polishing particles, thereby the nanometer cut reduced.Consider from the angle of production efficiency, be preferably 3kPa or more than, more preferably 5kPa or more than, more preferably 8kPa or more than.Therefore, reduce the angle of nanometer cut from mode and consider that abrasive disk pressure is preferably 5~40kPa, more preferably 10~30kPa with economy.
In addition, the adjustment of described abrasive disk pressure can be by to abrasive disk and/or substrate applies air pressure or load-carrying is carried out.
In above-mentioned grinding step, can grind as follows and be ground substrate, promptly substrate is clamped with the abrasive disk that is pasted with porous organic polymer class abrasive cloth etc., supply with grinding Liquid composition and exert pressure to abrasive surface, abrasive disk or substrate are moved.Other condition (kind of shredder, the kind of abrasive cloth etc.) when grinding, not special the qualification.In addition, method etc. from grinding Liquid composition to abrasive surface that supply with method, mobile abrasive disk or the substrate of also can be undertaken by known method.
As the grinding charge that is suitable for the present invention's use is the material of substrate, can be identical with the material of the grinding charge that is applicable to above-mentioned grinding Liquid composition.
On effect, in the manufacturing process of substrate, when having a plurality of grinding step that comprises the rough grinding operation, preferably use the present invention in second operation or follow-up operation, for example preferably use in the smooth grinding operation.The substrate of Zhi Zaoing has obviously reduced the nanometer cut like this, and has good surface smoothness.
As mentioned above, the manufacture method of the substrate of the application of the invention, the generation that can be suitable for making the nanometer cut is able to obvious minimizing and the good high-quality substrate of surface texture, for example stores precise part substrates such as hard disk and semiconductor element.
Embodiment
Example I
As being ground substrate, used thickness is that 1.27mm, external diameter are that φ 95mm and internal diameter are that the plating of φ 25mm has the aluminium alloy base plate of Ni-P coating to carry out grinding to estimate.This substrate carries out rough grinding with the lapping liquid that contains the alumina lap material in advance, is 10 thereby make AFM-Ra.
Example I-1
As abrasive substance, 25L colloidal silica slip (median size of E.I.Du Pont Company's manufacturing, primary particle is that 22nm, silicon oxide particle concentration are 40 weight %) is filtered with pocket type deep layer type filter (manufacturing of Sumitomo 3M company, Liquid Filter 522), use pleated filter (manufacturing of Advantec Japan company, TCS-E045-S1FE) to filter then, just obtain the polishing particles mixed liquid a (allotment example 1) of table 1.Then in ion exchanged water, add the aqueous hydrogen peroxide solution (Asahi Electro-Chemical Co. Ltd's manufacturing) of 35 weight % of predetermined amount, HEDP (the 1-hydroxy ethylene-1 of 60 weight %, the 1-di 2 ethylhexyl phosphonic acid) sulfuric acid of the aqueous solution (Japanese Solutia company make) and 95 weight % (company makes with the pure pharmaceutical worker's industry of light) and mixing, in the aqueous solution that makes like this, under stirring, add above-mentioned polishing particles mixed liquid a, make it to have the concentration of table 2, so just obtained grinding Liquid composition A.
Example I-2
Except HDCII (MCY1001J012H13) that Japanese Pall company is made as the pleated filter, all the other and example I-1 are similarly carried out, and have so just obtained the polishing particles mixed liquid b (allocating example 2) and the grinding Liquid composition B of table 1.
Example I-3
Except the Zetapor (70006-01N-120PG) that CUNO company is made is used as the pleated filter, all the other and example I-1 are similarly carried out, and have so just obtained the polishing particles mixed liquid c (allotment example 3) and the grinding Liquid composition C of table 1.
Example I-4
Except pleated filter was replaced with the strainer (TCPD-05A-S1FE) of Advantec Japan company manufacturing, all the other and example I-1 were similarly carried out, and had so just obtained the polishing particles mixed liquid d (allotment example 4) and the grinding Liquid composition D of table 1.
Example I-5
In ion exchanged water, the HEDP aqueous solution of 60 weight % of interpolation predetermined amount and the sulfuric acid of 95 weight % also mix, mixing the polishing particles mixed liquid a that under stirring, adds allotment example 1 in the aqueous solution that obtains like this, so just obtained grinding Liquid composition E.
Example I-6
The Ultipleat Profile (PUY1UY020H13) with intermediate structure that makes with Japanese Pall company except pleated filter replaces, all the other and example I-1 are similarly carried out, and have so just obtained the polishing particles mixed liquid g (allotment example 5) and the grinding Liquid composition G of table 1.
Example I-7
In ion exchanged water, the sulfuric acid of the aqueous hydrogen peroxide solution of 35 weight % of interpolation predetermined amount, the HEDP aqueous solution of 60 weight % and 95 weight % also mixes, mix like this the aqueous solution under stirring, add the polishing particles mixed liquid a of allotment example 1, so just obtained grinding Liquid composition I.
Example I-8
In the polishing particles mixed liquid a of allotment example 1, add 86% of the needed ion exchanged water of concentration reach table 2, to mix the dilution slip.In addition, in the residue 14% of above-mentioned ion exchanged water, the sulfuric acid of the HEDP aqueous solution of the aqueous hydrogen peroxide solution of 35 weight % of mix predetermined quantities (Asahi Electro-Chemical Co. Ltd's manufacturing), 60 weight % (Japanese Solutia company make) and 95 weight % (company makes with the pure pharmaceutical worker's industry of light), the allotment acidic aqueous solution.While stirring this acidic aqueous solution is added in the above-mentioned dilution slip then, so just obtained grinding Liquid composition K.
Comparative Example I-1
Except the WAVE STAR (W-004-S-DO-E) that Daiwabo company is made is used as the pleated filter, all the other and example I-1 are similarly carried out, and have so just obtained the polishing particles mixed liquid f (allotment example 6) and the grinding Liquid composition F of table 1.
Comparative Example I-2
In ion exchanged water, add the polishing particles mixed liquid a of allotment example 1 in stirring down, make it to have the concentration of table 2, so just obtained grinding Liquid composition H.
Comparative Example I-3
In ion exchanged water, in stirring the colloidal silica slip (manufacturing of daily output chemical industrial company, Snowtex ST-50, median size 30nm, silicon oxide particle concentration 48 weight %) that adds down as abrasive substance, make it to have the concentration of table 2, and then carry out suction filtration with the cellulose acetate system film filter (diameter 90mm) of 0.45 μ m, so just obtained grinding Liquid composition J.
Comparative Example I-4
Prepare 105L colloidal silica slip (E.I.Du Pont Company makes, the median size of primary particle be that 22nm, silicon oxide particle concentration are 40 weight %), make then wherein 100L by pocket type deep layer type filter (3M company in Sumitomo makes, Liquid Filter 522), follow by 2 sections deep layer type tube formula strainers (manufacturing of Japanese Pall company, RM1F010H21 and RM1F005H21 are in series).Be full of at the silicon oxide slip under the state of filter interior, place after 3 days, equally the remaining above-mentioned colloidal silica slip of 5L is filtered, so just obtain about 5L polishing particles mixed liquid m (allotment example 7).
Except replace polishing particles mixed liquid a with polishing particles mixed liquid m, obtain grinding Liquid composition M by polishing particles mixed liquid m equally with example I-1.
The polishing particles mixed liquid and the grinding Liquid composition that obtain for example I-1~I-8 and Comparative Example I-1~I-4, based on following condition, method, measure and estimate with regard to oversize particle, grinding rate and surfaceness, also, measure and estimate with regard to the nanometer cut based on this specification sheets described " standard test of nanometer cut ".Moreover, as evaluation, also carried out relative evaluation with respect to the nanometer cut number (root/face) of Comparative Example I-1 to the nanometer cut.In addition, grinding rate and surfaceness are the values under the grinding condition of nanometer cut standard test.The gained result is as shown in table 2.
[condition determination of polishing particles]
Determining instrument: PSS company makes, " Accusizer 780 APS "
Injection loop volume (injection loop volume): 1ml
Flow: 60ml/min
Data acquisition time: 60sec
Counting channel (number channels): 128
[condition determination of grinding rate]
Weight difference (g) by the grinding charge before and after will grinding is divided by the density (8.4g/cm of grinding charge 3), again divided by the surface-area (65.97cm of grinding charge 2) and milling time (min), calculate the amount of grinding in the time per unit, thereby obtained grinding rate (μ m/min).
[evaluation method of surfaceness (AFM-Ra)]
Testing tool: Veeco company makes, " TM-M5E "
Pattern: noncontact
Sweep velocity: 1.0Hz
Scanning area: 10 * 10 μ m
Estimate: distinguish 3 points of 120 ° at interval between the measurement inner periphery and the outer periphery in the heart,
This measurement is carried out on the two sides of substrate, obtains the mean value that amounts to 6 points.
Table 1
The kind of polishing particles mixed liquid Polishing particles in the polishing particles mixed liquid
Median size (nm) More than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m is (individual/cm 3) More than or equal to the polishing particles of 1 μ m concentration (weight %) with respect to all polishing particles More than or equal to the polishing particles of 3 μ m concentration (weight %) with respect to all polishing particles
Allotment example 1 a 22 23,500 0.000037 0.000035
Allotment example 2 b 22 154,000 0.000104 0.000098
Allotment example 3 c 22 281,000 0.000032 0.000029
Allotment example 4 d 22 403,000 0.000116 0.000108
Allotment example 5 g 22 341,000 0.000146 0.000145
Allotment example 6 f 22 934,000 0.000024 0.000010
Allotment example 7 m 22 340,000 0.001180 0.001160
Table 2
Grinding Liquid composition Rerum natura
Abrasive substance Hydrogen peroxide 1) HEDP 1) Sulfuric acid 1) pH Grinding rate 2) The nanometer cut number that records by standard test Surfaceness 3)
Kind More than or equal to 0.56 μ m but the polishing particles number of less than 1 μ m is (individual/cm3) More than or equal to the polishing particles of 1 μ m concentration with respect to all polishing particles 1) More than or equal to the polishing particles of 3 μ m concentration with respect to all polishing particles 1) The content of all polishing particles 1) Relative value (root/face) (root/cm 2)
The embodiment sequence number I-1 A 29,600 0.000248 0.000223 7.0 0.6 0.13 0.4 1.4 0.14 0.26 29 0.44 1.4
I-2 B 194,000 0.000525 0.000450 7.0 0.6 0.13 0.4 1.4 0.13 0.46 51 0.77 1.4
I-3 C 354,000 0.000162 0.000135 7.0 0.6 0.13 0.4 1.4 0.15 0.57 63 0.95 1.4
I-4 D 487,000 0.000585 0.000495 7.0 0.6 0.13 0.4 1.4 0.14 0.70 77 1.2 1.4
I-5 E 32500 0.000124 0.000098 7.0 - 0.13 0.4 1.4 0.06 0.40 44 0.67 1.4
I-6 G 430000 0.000981 0.000924 7.0 0.6 0.13 0.4 1.4 0.12 0.82 91 1.4 1.5
I-7 I 36400 0.000166 0.000148 7.0 0.6 0.03 0.1 5.0 0.04 0.81 89 1.3 1.5
I-8 K 38500 0.000322 0.000290 7.0 0.6 0.13 0.4 1.4 0.14 0.52 57 0.86 1.4
The comparative example sequence number I-1 F 1176000 0.000161 0.000064 7.0 0.6 0.13 0.4 1.4 0.14 1.00 110 1.7 1.5
I-2 H 90000 0.000086 0.000069 7.0 - - - 9.6 0.02 22.2 2440 37 1.6
I-3 J 47600 0.000651 0.000626 24.0 - - - 9.4 0.02 23.5 2590 39 1.4
I-4 M 418000 0.002370 0.002200 7.0 0.6 0.13 0.4 1.4 0.14 1.05 116 1.8 1.5
1) weight %
2)μm/min
3)AFM-Ra()
From the result shown in the table 2 as can be known: the substrate that the grinding Liquid composition of use example I-1~I-8 obtains is compared with Comparative Example I-1 or I-4, the generation of nanometer cut is suppressed, compare with Comparative Example I-2 or I-3, grinding rate is very fast, and the generation of nanometer cut is suppressed.
In addition, the substrate that example I-1~I-8 obtains, its surfaceness is all minimum.
Example II
Grinding Liquid composition a '~i ' that uses example II described later-1~II-5, Comparative Example I I-1~II-4 to obtain is same with example I, carries out the evaluation of oversize particle and nanometer cut, and the result is as shown in table 3.
In addition, as the evaluation index of filtering production efficiency, to not stop up and can filter at least the situation of 200kg grinding Liquid composition be set at production efficiency estimate qualified, for 200kg with interior generation obstruction the situation of filtration difficulty, the filtration yield when it stops up is as shown in table 3.
In addition, about the pressure reduction of the strainer of embodiment and comparative example, it is 150kPa or following that the logical liquid measure of control makes the deep layer type filter, and making pleated filter is 160kPa or following.
Example II-1
As the grinding Liquid composition before refining, uses the colloidal silica slip (median size of E.I.Du Pont Company's manufacturing, primary particle as 20nm, silicon oxide particle concentration be 40 weight %, more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m is 6875000/cm 3).During conveying, as pump, the surge pump (model DP-10BT) that uses Yamada company to produce, and the pulsation damper (model AD-10ST) that uses Yamada company to produce in this pump outlet portion, as the pipeline that is connected to the deep layer type filter, use the tetorn flexible hose (tetoron braided hose: external diameter 18mm, internal diameter 12mm) of 10m.As strainer, be set directly at the pocket type deep layer type filter (manufacturing of Sumitomo 3M company, " Liquid Filter 522 ") of housing department at 1 pressure warning unit of leading portion configuration, in 2 length of back segment configured in series is 250mm and " TCP-JX " (aperture 1.0 μ m) pleated filter of being made by Advantec Japan company, under the condition that average logical liquid measure is 10.3kg/min, filter, just obtain grinding Liquid composition a.At this moment, the fluctuating range of deep layer type filter inlet pressure is 30kPa, does not stop up when filtration yield is 200kg.In ion exchanged water, add the sulfuric acid (with the manufacturing of the pure pharmaceutical worker's industry of light company) of the aqueous hydrogen peroxide solution (Asahi Electro-Chemical Co. Ltd's manufacturings) of 35 weight % of predetermined amount, the HEDP aqueous solution of 60 weight % (Japanese Solutia company make) and 95 weight % and mix, in the aqueous solution that makes like this, under stirring, add above-mentioned grinding Liquid composition a, make it to have the concentration of table 3, so just obtained grinding Liquid composition a '.
Example II-2
About grinding Liquid composition, surge pump, pulsation damper, tetorn flexible hose and pocket type deep layer type filter before refining, present embodiment is employed identical with example II-1.Hypomere at pocket type deep layer type filter, " TCPD-03A " (aperture 3.0 μ m) the cartridge type deep bed filter that disposes 1 length and be 250mm and make by Advantec Japan company, then 2 length of configured in series are 250mm and " TCP-JX " (aperture 1.0 μ m) pleated filter of being made by Advantec Japan company, under the condition that average logical liquid measure is 8.1kg/min, filter, just obtain grinding Liquid composition b.At this moment, the fluctuating range of deep layer type filter inlet pressure is 35kPa, does not stop up when filtration yield is 200kg.The grinding Liquid composition b that use obtains by the method same with example II-1, has just obtained grinding Liquid composition b '.
Example II-3
About grinding Liquid composition, surge pump, pulsation damper, tetorn flexible hose and pocket type deep layer type filter before refining, present embodiment is employed identical with example II-1.Hypomere at pocket type deep layer type filter, configured length is the cartridge type deep bed filter of 250mm in order, they are respectively " Profile II-010 " (aperture 1.0 μ m) that " TCPD-03A " (aperture 3.0 μ m) that Advantec Japan company makes and Japanese Pall company make, then 2 length of configured in series are 250mm and " TCYE-HS " (aperture 0.65 μ m) pleated filter of being made by Advantec Japan company, under the condition that average logical liquid measure is 5.2kg/min, filter, just obtain grinding Liquid composition c.At this moment, the fluctuating range of deep layer type filter inlet pressure is 32kPa, does not stop up when filtration yield is 200kg.The grinding Liquid composition c that use obtains by the method same with example II-1, has just obtained grinding Liquid composition c '.
Example II-4
About grinding Liquid composition, surge pump, pulsation damper, tetorn flexible hose and pocket type deep layer type filter before refining, present embodiment is employed identical with example II-1.Hypomere at pocket type deep layer type filter, configured length is the cartridge type deep bed filter of 250mm in order, they are respectively " Profile II-005 " (aperture 0.5 μ m) that " Profile II-020 " (aperture 2.0 μ m) that Japanese Pall company makes and Japanese Pall company make, then 2 length of configured in series are 250mm and " TCYE-HS " (aperture 0.65 μ m) pleated filter of being made by Advantec Japan company, under the condition that average logical liquid measure is 6.4kg/min, filter, just obtain grinding Liquid composition d.At this moment, the fluctuating range of deep layer type filter inlet pressure is 21kPa, does not stop up when filtration yield is 200kg.The grinding Liquid composition d that use obtains by the method same with example II-1, has just obtained grinding Liquid composition d '.
Example II-5
About grinding Liquid composition, surge pump, pulsation damper, tetorn flexible hose and pocket type deep layer type filter before refining, present embodiment is employed identical with example II-1.As the operation that obtains the intermediate filtered thing, at first at the average grinding Liquid composition that leads to before using the filtration of pocket type deep layer type filter refining under the condition that liquid measure is 15.3kg/min.At this moment, the fluctuating range of deep layer type filter inlet pressure is 39kPa, and filtration yield is 250kg.(Northwest separating centrifuge is made manufacturing, model: U1-160, drum sizes φ 105 * long 730mm, maximum solids component maintenance dose: about 6L) to adopt KS type ultra-high speed separating centrifuge then, at rotating speed is that 18500r/min, centrifugal acceleration are 20000G, on average logical liquid measure is under the condition of 12.5kg/min, and a filtrate that obtains is handled.This intermediate filtered thing is put into the 1M that can pressurize 3Stainless steel tank in, 2 length are set is 250mm and by " TCP-JX " (aperture 1.0 μ m) pleated filter that Advantec Japan company makes in series connection on the groove outlet line, is 1.7kg/cm at pressure 2Pressurized conditions under filter, just obtain grinding Liquid composition e.When being 200kg, do not stop up filtration yield.The grinding Liquid composition e that use obtains by the method same with example II-1, has just obtained grinding Liquid composition e '.
Comparative Example I I-1
About grinding Liquid composition and pocket type deep layer type filter before refining, this comparative example is employed identical with example II-1.During conveying, as pump, the surge pump (model DP-10BT) that uses Yamada company to produce as the pipeline that is connected to the deep layer type filter, uses the tetorn flexible hose (external diameter 18mm, internal diameter 12mm) of 2m.Hypomere at pocket type deep layer type filter, it is 250mm and " TCP-JX " (aperture 1.0 μ m) pleated filter of being made by Advantec Japan company that series connection is provided with 2 length, under the condition that average logical liquid measure is 12.6kg/min, filter, just obtain grinding Liquid composition f.At this moment, the fluctuating range of deep layer type filter inlet pressure is 75kPa, does not stop up when filtration yield is 200kg.The grinding Liquid composition f that use obtains by the method same with example II-1, has just obtained grinding Liquid composition f '.
Comparative Example I I-2
About grinding Liquid composition, surge pump, pulsation damper, tetorn flexible hose and pocket type deep layer type filter before refining, this comparative example is employed identical with example II-1.Use pocket type deep layer type filter separately, under the condition that average logical liquid measure is 13.5kg/min, filter, just obtain grinding Liquid composition g.At this moment, the fluctuating range of deep layer type filter inlet pressure is 50kPa, does not stop up when filtration yield is 200kg.The grinding Liquid composition g that use obtains by the method same with example II-1, has just obtained grinding Liquid composition g '.
Comparative Example I I-3
About grinding Liquid composition, surge pump, pulsation damper and tetorn flexible hose before refining, this comparative example is employed identical with example II-1.It is 250mm and " TCP-JX " (aperture 1.0 μ m) pleated filter of being made by Advantec Japan company that series connection is provided with 2 length, filters under the condition that average logical liquid measure is 8.9kg/min, just obtains grinding Liquid composition h.At this moment, the fluctuating range of pleated filter inlet pressure is 45kPa, stops up during for 43kg at filtration yield.The grinding Liquid composition h that use obtains by the method same with example II-1, has just obtained grinding Liquid composition h '.
Comparative Example I I-4
About grinding Liquid composition, surge pump, pulsation damper and tetorn flexible hose before refining, this comparative example is employed identical with example II-1.It is 250mm and " TCYE-HS " (aperture 0.65 μ m) pleated filter of being made by Advantec Japan company that series connection is provided with 2 length, filters under the condition that average logical liquid measure is 7.5kg/min, just obtains grinding Liquid composition i.At this moment, the fluctuating range of pleated filter inlet pressure is 61kPa, stops up during for 20kg at filtration yield.The grinding Liquid composition i that use obtains by the method same with example II-1, has just obtained grinding Liquid composition i '.
Table 3
Example II-1 Example II-2 Example II-3 Example II-4 Example II-5 Comparative Example I I-1 Comparative Example I I-2 Comparative Example I I-3 Comparative Example I I-4
The deep bed filter number A 1 1 1 1 1 1 1
B 1 1
C 1
E 1
F 1
Centrifugation 1
The pleated filter number G 2 2 2 2 2
H 2 2 2
The pressure surge amplitude KPa 30 35 32 21 39 75 50 45 61
Average logical liquid measure Kg/min 10.3 8.1 5.2 6.4 15.3 12.6 13.5 8.9 7.5
Before the operation II, particle diameter is more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m #/cm 3 985,000 685,000 498,000 395,000 754,000 1,426,000 1,196,000 6,875,000 6,875,000
After the operation II, particle diameter is more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m #/cm 3 436,000 241,000 95,600 67,300 386,000 724,000 - 1,325,000 127,000
After the operation II, more than or equal to the polishing particles of 1 μ m concentration with respect to all polishing particles Weight % 0.000598 0.000284 0.000301 0.000364 0.000352 0.000642 0.008515 0.002016 0.000351
After the operation II, more than or equal to the polishing particles of 3 μ m concentration with respect to all polishing particles Weight % 0.000412 0.000108 0.000214 0.000154 0.000239 0.000326 0.000925 0.000951 0.000218
Production efficiency (filtration yield/kg) >200 >200 >200 >200 >200 >200 200 43 20
Grinding Liquid composition a′ b′ c′ d′ e′ f′ g′ h′ i′
Abrasive substance Weight % 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0
Hydrogen peroxide Weight % 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6
HEDP Weight % 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
Sulfuric acid Weight % 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4
pH 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4
The nanometer cut number that adopts standard test to record Relative value 0.68 0.52 0.37 0.36 0.64 1.00 1.20 1.23 0.47
(root/face) 82 62 44 43 77 120 144 148 56
(root/cm 2) 1.2 0.94 0.67 0.65 1.2 1.8 2.2 2.2 0.85
As can be known from the results of Table 3: compare with grinding Liquid composition f '~i ' that Comparative Example I I-1~II-4 obtains, the production efficiency height of grinding Liquid composition a '~e ' that example II-1~II-5 obtains, and can obviously reduce the nanometer cut.
EXAMPLE III
As being ground substrate, used thickness is that the plating of 1.27mm, φ 95mm has the aluminium alloy base plate of Ni-P coating to carry out grinding evaluation, this substrate carries out rough grinding with the lapping liquid that contains the alumina lap material in advance, thereby makes surfaceness (Ra) be 4.8nm for 1nm, percent ripple (Wa).
The allotment of grinding Liquid composition 1
In ion exchanged water, interpolation is as hydrogen peroxide (Asahi Electro-Chemical Co. Ltd's manufacturing) the 0.6 weight % of colloidal silica (using the median size of E.I.Du Pont Company's manufacturing, primary particle is the slip of 40 weight % as 22nm, silicon oxide particle concentration) 7 weight %, the 35 weight % of abrasive substance, and then add the HEDP aqueous solution (Japanese Solutia company makes, 60 weight % products), thereby the pH value is adjusted into 1.5, so just obtains grinding Liquid composition.This grinding Liquid composition is filtered with pleated filter (manufacturing of Advantec Japan company, " MCS-045-C10S "), just obtain grinding Liquid composition 1.Measure the polishing particles in this grinding Liquid composition 1, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m (the thick abrasive grain subnumber in the table) is every 1cm 3Being 53000, is 0.000042 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
In addition, use this grinding Liquid composition 1 to carry out the standard test of nanometer cut, the result is that nanometer cut number is 0.08/cm 2
The allotment of grinding Liquid composition 2
In ion exchanged water, interpolation is as hydrogen peroxide (Asahi Electro-Chemical Co. Ltd's manufacturing) the 0.6 weight % of colloidal silica (using the median size of E.I.Du Pont Company's manufacturing, primary particle is the slip of 40 weight % as 10nm, silicon oxide particle concentration) 7 weight %, the 35 weight % of abrasive substance, and then add the HEDP aqueous solution (Japanese Solutia company makes, 60 weight % products), thereby the pH value is adjusted into 1.5, so just obtains grinding Liquid composition.
This grinding Liquid composition is filtered with pleated filter (manufacturing of Advantec Japan company, " MCP-JX-C10S "), just obtain grinding Liquid composition 2.Measure the polishing particles in this grinding Liquid composition 2, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m is every 1cm 3Being 137400, is 0.000086 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
In addition, use this grinding Liquid composition 2 to carry out the standard test of nanometer cut, the result is that nanometer cut number is 0.35/cm 2
The allotment of grinding Liquid composition 3
Except not using pleated filter, all the other and grinding Liquid composition 1 similarly obtain grinding Liquid composition 3.Measure the polishing particles in this grinding Liquid composition 3, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m is every 1cm 3Being 520500, is 0.000242 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
In addition, use this grinding Liquid composition 3 to carry out the standard test of nanometer cut, consequently nanometer cut number is 5.5/cm 2
The allotment of grinding Liquid composition 4
Except use pleated filter (manufacturing of Advantec Japan company, " MCP-FX-C10S ") was filtered, all the other and grinding Liquid composition 1 similarly obtained grinding Liquid composition 4.Measure the polishing particles in this grinding Liquid composition 4, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m with respect to every 1cm 3Being 181200, is 0.000166 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
In addition, use this grinding Liquid composition 4 to carry out the standard test of nanometer cut, consequently nanometer cut number is 1.3/cm 2
The allotment of grinding Liquid composition 5
Except the pH value being adjusted into 9.5, making the concentration of abrasive substance in the grinding Liquid composition is the 2 weight %, and all the other and grinding Liquid composition 1 similarly obtain grinding Liquid composition.Moreover, this grinding Liquid composition is filtered with pleated filter (manufacturing of Advantec Japan company, " MCP-JX-C10S "), just obtain grinding Liquid composition 5.Measure the polishing particles in this grinding Liquid composition 5, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m is every 1cm 3Being 101000, is 0.000042 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
The allotment of grinding Liquid composition 6
The concentration of abrasive substance is that all the other and grinding Liquid composition 1 similarly obtain grinding Liquid composition the 3.5 weight % in making grinding Liquid composition.Moreover, this grinding Liquid composition is filtered with pleated filter (manufacturing of Advantec Japan company, " MCS-045-C10S "), just obtain grinding Liquid composition 6.Measure the polishing particles in this grinding Liquid composition 6, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m is every 1cm 3Being 26000, is 0.000062 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
The allotment of grinding Liquid composition 7
The concentration of abrasive substance is that all the other and grinding Liquid composition 2 similarly obtain grinding Liquid composition the 2 weight % in making grinding Liquid composition.Moreover, this grinding Liquid composition is filtered with pleated filter (manufacturing of Advantec Japan company, " MCS-045-C10S "), just obtain grinding Liquid composition 7.Measure the polishing particles in this grinding Liquid composition 7, consequently, more than or equal to 0.56 μ m but the silicon oxide particle number of less than 1 μ m with respect to every 1cm 3Being 85000, is 0.000065 weight % more than or equal to the polishing particles of 1 μ m with respect to all polishing particles.
EXAMPLE III-1~III-11, Comparative Example I II-1~III-4
Use above-mentioned grinding Liquid composition 1~7, under the grinding condition shown in following and the table 4, grind substrate.
III-1. grinding condition
Rub tester: SPEED FAM company makes, 9B type twin grinder
Abrasive cloth: Fuji's weaving corporate system is made urethane system grinding pad (thickness: 0.9mm, mean pore size: 30 μ m)
The speed of rotation of abrasive disk: 32.5r/min
The feed rate of grinding Liquid composition (every 1cm 2Substrate by milling area): 0.03~0.15cm 3/ min
Milling time: 4min
Abrasive disk pressure (grinding loading): 2~20kPa
The piece number of the substrate that grinds: 10
About EXAMPLE III-1~III-11 and the resulting substrate of Comparative Example I II-1~III-4, except that the condition of feed rate (flow) that changes grinding Liquid composition and abrasive disk pressure, all the other and fact Example I similarly measure the nanometer cut, and resulting result is as shown in table 4.
Table 4
The kind of grinding Liquid composition Thick abrasive grain subnumber is (individual/cm 3*) Flow (cm 3/ minute) Abrasive disk pressure (kPa) The concentration of abrasive substance (weight %) Grind the pH value of waste liquid Nanometer cut (root/face)
EXAMPLE III-1 1 53000 0.15 3 7 1.6 26
EXAMPLE III-2 1 53000 0.15 8 7 1.7 5
EXAMPLE III-3 1 53000 0.15 15 7 1.8 18
EXAMPLE III-4 1 53000 0.06 8 7 1.9 25
EXAMPLE III-5 6 26000 0.15 8 3.5 1.6 25
EXAMPLE III-6 2 137400 0.15 8 7 1.7 23
EXAMPLE III-7 2 137400 0.09 8 7 1.7 25
EXAMPLE III-8 4 181200 0.15 8 7 1.6 89
EXAMPLE III-9 7 85000 0.15 8 2 1.6 65
EXAMPLE III-10 1 53000 0.15 2 7 1.6 78
EXAMPLE III-11 1 53000 0.15 20 7 1.9 65
Comparative Example I II-1 3 520500 0.15 8 7 1.7 361
Comparative Example I II-2 3 520500 0.15 2 7 1.6 226
Comparative Example I II-3 4 181200 0.03 8 7 1.7 266
Comparative Example I II-4 5 101000 0.15 8 2 10.2 3655
*)Every 1cm 3In the grinding Liquid composition more than or equal to 0.56 μ m but the abrasive grain subnumber of less than 1 μ m.
As can be known from the results of Table 4: the resulting substrate of EXAMPLE III-1~III-11 is compared with Comparative Example I II-1~III-4, and the nanometer cut is able to obvious minimizing.
Grinding Liquid composition of the present invention for example goes for the grinding of indicator substrates such as disk, CD, photomagneto disk, perhaps is applicable to the grinding of precise part substrates such as photomask base plate, optical lens, optical mirror, optical prism, semiconductor substrate etc.

Claims (21)

1. grinding Liquid composition, it contains abrasive substance and water, and the pH value is 0.1~7, and meets the following conditions:
(1) at every 1cm 3Grinding Liquid composition in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(2) polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the grinding Liquid composition.
2. according to the described grinding Liquid composition of claim 1, it further meets the following conditions:
(3) polishing particles more than or equal to 3 μ m is 0.0008 weight % or following with respect to all polishing particles in the grinding Liquid composition.
3. according to the described grinding Liquid composition of claim 1, wherein the median size of the primary particle of abrasive substance is 1~50nm.
4. according to the described grinding Liquid composition of claim 1, wherein the content of abrasive substance is 0.5~20 weight % in the grinding Liquid composition.
5. according to the described grinding Liquid composition of claim 1, wherein abrasive substance is a colloidal silica.
6. according to the described grinding Liquid composition of claim 1, wherein said grinding Liquid composition is used for magnetic disc substrate.
7. according to the described grinding Liquid composition of claim 1, wherein the nanometer cut number that is ground substrate that records by standard test is every 1cm 2Substrate is 1.5 or following.
8. polishing particles mixed liquid that is used to allocate the described grinding Liquid composition of claim 1, it contains abrasive substance and water, and meets the following conditions:
(i) at every 1cm 3The polishing particles mixed liquid in, more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 500000 or below, and
(ii) the polishing particles more than or equal to 1 μ m is 0.001 weight % or following with respect to all polishing particles in the polishing particles mixed liquid.
9. the manufacture method of the described grinding Liquid composition of claim 1, it has following refining step:
(I) filter the operation made from extra care preceding grinding Liquid composition and obtaining the intermediate filtered thing with the deep layer type filter, and
(II) filter the intermediate filtered thing with pleated filter and obtain the operation of grinding Liquid composition,
Wherein in operation I, the fluctuating range of filter inlet pressure is 50kPa or following.
10. the manufacture method of grinding Liquid composition according to claim 9, wherein, the every 1cm behind the operation I 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 1000000 or below.
11. the manufacture method of grinding Liquid composition according to claim 9 wherein, is supplied to every 1cm of operation II 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 1000000 or below.
12. the manufacture method of the described polishing particles mixed liquid of claim 8, it has following refining step:
(I ') filter the operation made from extra care preceding polishing particles mixed liquid and obtaining the intermediate filtered thing with the deep layer type filter, and
(II ') filters the intermediate filtered thing with pleated filter and obtains the operation of polishing particles mixed liquid,
Wherein in operation I ', the fluctuating range of filter inlet pressure is 50kPa or following.
13. the manufacture method of polishing particles mixed liquid according to claim 12, wherein, the every 1cm behind the operation I ' 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 1000000 or below.
14. the manufacture method of polishing particles mixed liquid according to claim 12 wherein, is supplied to every 1cm of operation II ' 3In the intermediate filtered thing, particle diameter more than or equal to 0.56 μ m but the polishing particles of less than 1 μ m be 1000000 or below.
15. the manufacture method of a substrate, it has the operation of using the described grinding Liquid composition of claim 1 and grinding substrate by shredder.
16. the manufacture method of substrate according to claim 15, wherein, substrate is a magnetic disc substrate.
17. the manufacture method of substrate according to claim 16, wherein, magnetic disc substrate is the aluminium alloy base plate that plating has Ni-P coating.
18. the manufacture method of substrate according to claim 15, it has following operation: with every 1cm of substrate 2By milling area is 0.06cm 3/ minute or above flow supply with grinding Liquid composition to the shredder that is equipped with abrasive disk, thereby substrate is ground.
19. the manufacture method of substrate according to claim 15, wherein, the abrasive disk pressure of shredder is 3~50kPa.
20. the manufacture method of substrate according to claim 15, it has a plurality of grinding steps, and wherein grinding Liquid composition is used for smooth grinding.
21. the manufacture method of substrate according to claim 15, wherein, the difference of the pH value of the grinding waste liquid after the pH value of the grinding Liquid composition before grinding and the grinding be 2 or below.
CNB2005100859919A 2004-08-09 2005-07-21 Polishing composition Expired - Fee Related CN100529008C (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103119122A (en) * 2010-09-24 2013-05-22 花王株式会社 Manufacturing method of polishing liquid composition
CN103270129A (en) * 2010-12-24 2013-08-28 花王株式会社 Method for producing polishing liquid composition
CN105980509A (en) * 2014-02-14 2016-09-28 凯斯科技股份有限公司 Method for preparing slurry composition and slurry composition prepared thereby
CN107353832A (en) * 2016-05-10 2017-11-17 Jsr株式会社 Semiconductor processes composition and processing method
CN108148507A (en) * 2017-12-18 2018-06-12 清华大学 A kind of polishing composition for fused quartz
CN110240866A (en) * 2018-03-07 2019-09-17 福吉米株式会社 Composition for polishing

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103119122A (en) * 2010-09-24 2013-05-22 花王株式会社 Manufacturing method of polishing liquid composition
CN103119122B (en) * 2010-09-24 2014-10-08 花王株式会社 Manufacturing method of polishing liquid composition
CN103270129A (en) * 2010-12-24 2013-08-28 花王株式会社 Method for producing polishing liquid composition
CN103270129B (en) * 2010-12-24 2015-05-27 花王株式会社 Method for producing polishing liquid composition
CN105980509A (en) * 2014-02-14 2016-09-28 凯斯科技股份有限公司 Method for preparing slurry composition and slurry composition prepared thereby
US10428240B2 (en) 2014-02-14 2019-10-01 Kctech Co., Ltd. Method for preparing slurry composition and slurry composition prepared thereby
CN107353832A (en) * 2016-05-10 2017-11-17 Jsr株式会社 Semiconductor processes composition and processing method
CN108148507A (en) * 2017-12-18 2018-06-12 清华大学 A kind of polishing composition for fused quartz
CN108148507B (en) * 2017-12-18 2020-12-04 清华大学 Polishing composition for fused quartz
CN110240866A (en) * 2018-03-07 2019-09-17 福吉米株式会社 Composition for polishing

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