CN1731230A - A method for improving coupling tolerance of photoelectric element - Google Patents
A method for improving coupling tolerance of photoelectric element Download PDFInfo
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- CN1731230A CN1731230A CN 200510091899 CN200510091899A CN1731230A CN 1731230 A CN1731230 A CN 1731230A CN 200510091899 CN200510091899 CN 200510091899 CN 200510091899 A CN200510091899 A CN 200510091899A CN 1731230 A CN1731230 A CN 1731230A
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Abstract
The invention relates to a method for elevating light-sensitive cell coupling tolerance degree, which uses semi-conductor making art to form a position and a micro ball-lens socket on the light-sensitive cell corn; the socket center is correspondent to the light couple or the output center of the light-sensitive cell corn; it embeds the micro ball-lens to the micro ball-lens socket so that the micro ball-lens can automatically aim to the light couple or the output center of the light-sensitive cell corn; the light-sensitive cell subsequent enclosing optical coupling tolerance degree can be amplified by adjusting the micro ball-lens.
Description
Technical field
The present invention relates to a kind of method that improves photoelectric element coupling tolerate degree, relate in particular to a kind of follow-up encapsulating optical coupling tolerate degree of photovalve that makes and to enlarge several times, even can monitor, not rely under the situation of optical alignment in no characteristic, finish optical coupled, reach the method for the passive encapsulation purpose of high precision.
Background technology
Along with increasing substantially of information flow-rate, therefore its demand frequency range of the optical-electric module that communication is used improves, and causes photovalve active region size to be reduced day by day, and it is strict that the accuracy requirement of optical coupled is tending towards thereupon.Especially under the single-mode fiber environment of applications, the difficulty that highlights optical coupled more and faced.The face coupled mode device for testing light of using with optical-fibre communications is an example, and under the bit rate of 2.5Gb/s, the optically-coupled bore dia of device for testing light can have 100 microns approximately, and corresponding single-mode fiber can have tens of microns coupling tolerate degree.Yet when Bit Transmission Rate was promoted to 10Gb/s, the optically-coupled bore dia to below 40 microns, had reduced coupling tolerate degree with little greatly.The necessary method that obtains good coupling that is encapsulated as is aimed in the conventional dynamic monitoring, yet utilize dynamic monitoring to aim at encapsulation, high coupling efficiency needs high precision equipment and long adjustment time, is reflected on the cost timeliness, has limited the production capacity and the price of high speed optoelectronic module.
U.S.Pat.No.5,963,694 and U.S.Pat.No.6,053, lead type (Pigtail type) encapsulation that discloses in 641, its program all is to finish metal pedestal of photovalve crystal grain (TO-header) and metal housing (Cap) encapsulation (having ball-type lens on this metal housing) earlier, the fiber-optic wire and the photovalve that will be inserted in stainless steel optical fiber sleeve more carry out optical axis alignment, are aided with coaxial laser welding collocation and aim at the trace program automatically and finish that dynamic optical axis alignment and welding are fixing to wait action.U.S.Pat.No.6,340,831 disclose a joint type (Receptacle-type) encapsulation in addition, and it is also for utilizing dynamic optical axis alignment and welding fixedly to finish encapsulation.Above-mentioned " initiatively " encapsulation technology is finished from photovalve crystal grain down to module package all need experience at least 2 to 3 times dynamic monitoring optical axis alignment, therefore inevitable limit production timeliness.And be encapsulated as one of ageing important means of raising production to quicken the dynamic monitoring aligning by improving coupling tolerate degree, above-mentioned patent is all introduced extra optical device (as: lens etc.) reaching this purpose in encapsulating structure, yet forms extra cost burden.Compared to above-mentioned " crystal grain " level encapsulation technology, U.S.Pat.No.5,500,540 propose " wafer " level encapsulation technology of a photovalve, required optical element (as: lenticule) when it will encapsulate by semiconductor fabrication process, directly be formed on by the gross on the wafer, except that quickening follow-up package speed, also reduce packaging cost; But the optical element (as: lenticule) by semiconductor fabrication process forms then is restricted on the size, and the lenticule of hundreds of micron-scales or focal length are test for manufacture craft, and also therefore effective optical aperture can not significantly promote.
With respect to active pattern encapsulation, the encapsulation of passive pattern in other words needn't the dynamic monitoring optical axis, can obtain suitable coupling efficiency by suitable guiding mechanism, so can quicken the carrying out that encapsulate.U.S.Pat.No.4,339, disclose light emitting diode (LED) crystalline granular texture that is fit to passive encapsulation in 689, this crystal grain has the semicircle lens that utilize photolithography in semiconductor, etching, form with manufacture craft such as deposition and in alignment with the fiber optic hub (Through hole) of these lens, this fiber optic hub is formed by the dark etching process that utilizes wafer rear, and is comparatively complicated on the manufacture craft.U.S.Pat.No.4,355,321 and U.S.Pat.No.4,727,649 mechanism of also utilizing fiber optic hub to aim at as guide optic fibre, its difference is that fiber optic hub is not to be formed directly on the photovalve, but is formed on earlier on another substrate, utilize aligning soldering bonding method to combine again, for the usefulness of follow-up packaged fiber guiding with photovalve.U.S.Pat.No.5 then utilizes moulded section that ball-type lens and photovalve pedestal are encapsulated in the lump in 175,783, and directly forms a fiber optic hub in order to optic fibre guide, promotes packaging efficiency.Case is when being applied in the passive encapsulation of high speed optoelectronic element before above-mentioned, and the technology that is adopted all will face the test on the precision.
This shows that above-mentioned prior art still has many disappearances and deficiency, remain to be improved.
Summary of the invention
The object of the present invention is to provide a kind of method that improves photoelectric element coupling tolerate degree, be by integrating suitable microsphere lens, the follow-up encapsulating optical coupling tolerate degree of photovalve can enlarge several times, even can be in no characteristic monitoring, do not rely under the situation of optical alignment, finish optical coupled, reach the purpose of the passive encapsulation of high precision, in brief, by the present invention, precision coupling required when tradition crystal grain level initiatively encapsulates can form the embedding seat that can embed microsphere lens by the gross by semiconductor fabrication process on wafer, the subsequent element encapsulation is simplified to low precision form or passive form, improves the production timeliness.
Another object of the present invention is to provide a kind of method that improves photoelectric element coupling tolerate degree, is by applying optical cement in the embedding seat, can reach the fixedly purpose of microsphere lens and refractive index match, improves structural stability and also improves coupling efficiency.
Another object of the present invention is to provide a kind of method that improves photoelectric element coupling tolerate degree, be the gap that keeps by at microsphere lens embedding seat sidewall, can avoid bubble to fall into existing in the embedding seat or allow optical cement to follow the coupling interface that this gap is inserted microsphere lens and photovalve.
Another purpose of the present invention is to provide a kind of method that improves photoelectric element coupling tolerate degree, for the benefit of guides microsphere lens to embed, and microsphere lens embedding seat upper limb also can form the lead angle structure.
A further object of the present invention is to provide a kind of method that improves photoelectric element coupling tolerate degree, because of the characteristic that semiconductor fabrication process is handled by the gross, the present invention also can be applicable on the array crystal grain, by microsphere lens embedding seat array, integrate the microsphere lens array, simplify the aligning and the encapsulation of array crystal grain.
The present invention reaches the foregoing invention purpose by the following technical programs:
A kind of method that improves photoelectric element coupling tolerate degree is provided, it passes through semiconductor fabrication process, as little shadow, deposition, plating, etching etc., on photovalve crystal grain, form a location and reach the fixedly microsphere lens embedding seat of usefulness (Micro Ball-lens Socket), embedding seat center is corresponding to the optically-coupled or the output center of photovalve crystal grain, and its precision can be controlled in below 1 micron because of adopting semiconductor fabrication process; After microsphere lens embedded microsphere lens embedding seat on the crystal grain, microsphere lens was promptly automatically in alignment with the optically-coupled or the output center of crystal grain.
A kind of method that improves photoelectric element coupling tolerate degree with reliability and integrality provided by the present invention when comparing mutually with other prior art and preceding case, has more and gets the row advantage ready:
1. the present invention is can be by integrating suitable microsphere lens, make the follow-up encapsulating optical coupling tolerate degree of photovalve can enlarge several times, even can monitor, not rely under the situation of optical alignment in no characteristic, finish optical coupled, reach the purpose of the passive encapsulation of high precision.
2. by the present invention, precision required in the time of traditional crystal grain level initiatively can being encapsulated is coupled, on wafer, form the embedding seat that can embed microsphere lens by the gross by semiconductor fabrication process, the subsequent element encapsulation is simplified to low precision form or passive form, improve the production timeliness.
3. the present invention can be by applying optical cement in the embedding seat, reaches the fixedly purpose of microsphere lens and refractive index match, improves structural stability and also improve coupling efficiency.
4. the present invention can be by the gap that keeps at microsphere lens embedding seat sidewall, can avoid bubble to fall into existing in the embedding seat or allows optical cement to follow the coupling interface that this gap is inserted microsphere lens and photovalve.
5. the present invention for the benefit of guides microsphere lens to embed, and can form a lead angle structure at microsphere lens embedding seat upper limb.
6. the characteristic that can handle by the gross because of semiconductor fabrication process of the present invention is applied on the array crystal grain, by microsphere lens embedding seat array, integrates the microsphere lens array, simplifies the aligning and the encapsulation of array crystal grain.
Description of drawings
Figure 1A and Figure 1B are the photovalve crystal grain synoptic diagram of tool microsphere lens embedding seat, and wherein microsphere lens does not embed as yet.
Fig. 2 A and Fig. 2 B are the synoptic diagram of the photovalve crystal grain of tool microsphere lens embedding seat, and wherein microsphere lens embeds;
Fig. 3 A to Fig. 3 F is the vertical view of microsphere lens embedding seat on the photovalve crystal grain.
Fig. 4 is the optoelectronic component array crystal grain synoptic diagram of tool microsphere lens embedding seat array, and wherein the microsphere lens array embeds.
Fig. 5 A and Fig. 5 B are the making step synoptic diagram of first embodiment of the invention.
Fig. 6 A to Fig. 6 C is the making step synoptic diagram of second embodiment of the invention.
Fig. 7 A to Fig. 7 C is the making step synoptic diagram of third embodiment of the invention.
Fig. 8 A to Fig. 8 B is the making step synoptic diagram of fourth embodiment of the invention.
Specific implementation method
The present invention discloses the method for a kind of raising photovalve (as: wall emission laser crystal grain or device for testing light crystal grain etc.) coupling tolerate degree.Shown in Figure 1A, after forming electrode 11,12 on the photovalve crystal grain 10, utilize again semiconductor fabrication process on crystal grain, to form to be centrally aligned to that element light is exported or the microsphere lens embedding seat 14 at coupling center 13.The function of this embedding seat is in follow-up single crystal grain or the array die package process; by microsphere lens 15 is embedded in the microsphere lens embedding seat 14; shown in Fig. 2 A; can finish the optical axis alignment of crystal grain and microsphere lens; improve the correcting deviation tolerance of follow-up encapsulating optical coupling; even dynamic monitoring aimed at be reduced to passive aligning, keep high coupling efficiency simultaneously.Figure 1B and 2B are the transverse cross-sectional view of corresponding Figure 1A of difference and 2A, and wherein D is the aperture of microsphere lens embedding seat, and T is an embedding seat wall thickness, and H then is a microsphere lens embedding seat height.It must be emphasized that, the microsphere lens embedding seat that technical scheme of the present invention answers broad sense to regard as to utilize described method for semiconductor manufacturing to form on element crystal grain, so its apparent change is also contained in the present invention.As Fig. 3 A-F the cited case, embedding seat inner edge is all circle or regular polygon, can be positioned in the embedding seat coupling aperture of optical axis alignment photovalve automatically for microsphere lens.And the incircle aperture D of embedding seat inner edge and microsphere lens radius R will determine microsphere lens to embed the degree of depth that is absorbed in behind the embedding seat.Fig. 1 and Fig. 2 are that " C " type microsphere lens embedding seat 333 with Fig. 3 C is an example.In addition, because of semiconductor fabrication process belongs to manufacture craft by the gross, enforcement of the present invention also is not limited on the single element crystal grain, and the array crystal grain with embedding seat array can be reached by same manufacture craft, therefore also is covered by among the present invention.Lift 1 * 4 array crystal grain 40 as Fig. 4 and be example, crystal grain 40 forms electrode 41, the optically-coupled or the output center 43 of the microsphere lens embedding seat 44 all corresponding individual die on each crystal grain, microsphere lens 45 is embedded in the corresponding embedding seat in regular turn or simultaneously, can reach the purpose that improves follow-up encapsulating optical coupling correcting deviation tolerance.
Below utilize four embodiment that the present invention is described respectively.In first embodiment, the microsphere lens embedding seat on the photovalve is for utilizing photosensitive macromolecular material, and as photoresistance, coating and exposure imaging method form, and the method can form extremely hundreds of microns microsphere lens embedding seat of tens of microns; In a second embodiment, utilize thick film photoresistance and exposure imaging technology on element, to form the photoresistance mould of a microsphere lens embedding seat, utilize evaporation or electroplate manufacture craft plated metal in mould, promptly get a metallic microspheres lens embedding seat after removing the photoresistance mould, height can be by tens of microns to hundreds of microns; Then utilize long-pending extremely hundreds of microns the thickness of tens of microns that forms of dielectric medium coating or Shen at the 3rd embodiment, be aided with dark etching process and on element, form microsphere lens embedding seat; Then utilize long-pending extremely hundreds of microns the thickness of tens of microns that forms of dielectric medium coating or Shen at the 4th embodiment, collocation pre-mould of resistance material lenticule and dry-etching manufacture craft form and include the lenticular microsphere lens embedding of dielectric material seat.It must be emphasized that following examples are example with face coupled mode device for testing light all, but the present invention may be implemented in other photovalve equally, as wall emission laser or face coupled mode modulator etc.
First embodiment:
Figure 5 shows that the method for making diagrammatic cross-section of first embodiment, it must be emphasized that this for getting single grained region mapping on the wafer, actual fabrication technology is all carried out on the full wafer wafer.Among Fig. 5 A, 51 is the top electrode of device for testing light, and 52 is the optically-coupled hole of device for testing light.Photosensitive macromolecular material 53 is coated on the wafer, after preposition baking, by light shield 54 definition microsphere lens embedding seat shaped regions, utilize ultraviolet ray 55 exposures and form microsphere lens embedding holder structure 53a (Fig. 5 B) through developing, its center is corresponding to the optically-coupled center of device for testing light.In the present embodiment suitably the inside diameter D of embedding seat be 100 to 150 microns, suitably embedding seat height H is 100 to 150 microns, for the microsphere lens at radius R designed according to following formula:
Pattern on the light shield 54 can be with reference to as Fig. 3 the cited case.After heat treatment, the microsphere lens embedding seat of this macromolecule material promptly possesses suitable structural strength and weather-proof ability.This photosensitive macromolecular material adopts the SU-8 series thick film photoresistance that MicroChem company produces in the present embodiment, exposure method is for adopting general ultraviolet contact exposure machine, and the adjustment by photoresistance stickiness and coating rotating speed can form tens of microns to the high microsphere lens embedding seats of hundreds of microns.With SU-8 2100 is example (2100 are its stickiness grade), the coating rotating speed of 2000rpm can be made the high microsphere lens embedding seat of 100-120 micron, carries out about 15～20 minutes hard baking and can get required structural strength of follow-up packaging manufacturing process and adhesion under 150～200 ℃.Except that adopting SU-8, the ORMOCER s that Cyclotene-4000 series that Dow Chemical company produces or Microresist Technology company produce also is suitable as the material of microsphere lens embedding seat.Except that ultraviolet contact exposure machine, also can adopt X-ray exposure machine, stepping exposure machine (Stepper) or direct electronic beam to retouch machine (E-beam Writer) and define microsphere lens embedding seat photoresistance pattern again.
Second embodiment:
Present embodiment utilizes thick film photoresistance collocation photolithography in semiconductor manufacture craft and metal deposition manufacture craft, forms the microsphere lens embedding seat of metal material.Figure 6 shows that the method for making diagrammatic cross-section of second embodiment, this is for getting single grained region mapping on the wafer, and actual fabrication technology is all carried out on the full wafer wafer.Among Fig. 6 A, 61 is the top electrode of device for testing light, and 62 is the optically-coupled hole of device for testing light.Thick film photoresistance 63 is coated on the wafer, after preposition baking,, utilizes ultraviolet ray 65 exposures and form the photoresistance mould 63a (Fig. 6 B) of microsphere lens embedding seat through developing by light shield 64 (pattern such as Fig. 3 the cited case) definition microsphere lens embedding seat shaped region.Handle through moderate-heat this light resistance structure is possessed enough adhere to, anti-corrosion, temperature resistant capability, promptly carry out metal (as gold, silver, copper, aluminium, nickel etc.) deposition manufacture craft, to deposit thickness reach the number little ten meters, even after hundred microns, utilize solvent such as acetone to remove photoresistance mould 63a, promptly stay a metallic microspheres lens embedding seat 66 (Fig. 6 C), embedding seat center is corresponding to the optically-coupled center of device for testing light.The inside diameter D of suitable embedding seat is 50 to 150 microns in the present embodiment, and suitably embedding seat height H is 50 to 150 microns.
Photoresistance can adopt the NR5-8000 thick film photoresistance that Futurrex company produces in the present embodiment, and it can form about 50 microns high photoresistance mould on wafer under the coating rotating speed of 500rpm.And except that NR5-8000, the BPR100 that ma-P100 that Microresist Technology produces or Shipley company produce also can be used for forming the photoresistance mould of this embodiment.And the photoresistance exposure method can be general ultraviolet contact exposure, or adopts X-ray exposure machine, stepping exposure machine (Stepper) or direct electronic beam to retouch machine (E-beam Writer) and wait and define photoresistance mould pattern.In addition, the metal of present embodiment deposition can be utilizes the evaporation coating method plated metal in the photoresistance mould, but must note the evaporate process temperature in case photoresistance moding shape and rotten.Or the photoresistance mould that forms by the above-listed photoresistance of addressing (be all and can bear the acid-base solution that plating/electroless process experiences), with plating/electroless plating manufacture craft plated metal in the photoresistance mould.
The 3rd embodiment:
Present embodiment utilizes thick dielectric substance layer collocation dry-etching manufacture craft, forms dielectric material microsphere lens embedding seat.Figure 7 shows that the method for making diagrammatic cross-section of the 3rd embodiment, this is for getting single grained region mapping on the wafer, and actual fabrication technology is all carried out on the full wafer wafer.Among Fig. 7 A, 71 is the top electrode of device for testing light, and 72 is the optically-coupled hole of device for testing light.Thick dielectric substance layer 73 is deposited or is coated on the wafer, on dielectric medium 73, define etch shield 74, this shielding pattern such as Fig. 3 the cited case again.Remove the dielectric mediums that shield outside 74 by dry-etching 75, can form the microsphere lens embedding seat 73a (Fig. 7 B) of a dielectric material, its center is corresponding to the optically-coupled center of device for testing light.The internal diameter of suitable embedding seat is 25 to 150 microns in the present embodiment, and suitable embedding seat height H is 25 to 150 microns.As Fig. 7 C, by parameter adjustments such as etch shield material and thickness, dielectric material and thickness and etching selectivities, etch shield 74 can begin approach exhaustion from the edge in etching process, therefore the dielectric medium of microsphere lens embedding seat 73b upper limb can form a lead angle because of the edge is subjected to etching, guiding microsphere lens embedding when helping follow-up encapsulation.
Silicon dioxide (the SiO that one of embodiment of the invention can utilize electricity slurry gain chemical vapor deposition (PECVD) to form
2) dielectric layer 73, its thickness is 30 microns, the etch shield 74 on it is the thick chromium of 2500～3000 dusts (Cr) film.The chromium metal is lifted off or chromium metal etch manufacture craft is formed in order to utilize general little shadow manufacture craft to arrange in pairs or groups in this chromium film shielding.Dielectric layer etch is for adopting inductive coupling type electricity slurry active-ion-etch equipment (ICP-RIE), under the gas composition of carbon tetrafluoride (CF4) and oxygen (O2) or under the gas composition of octafluorocyclobutane (C4F8) and oxygen, remove the outer silicon dioxide of chromium film shielding, etch-rate can reach about 0.3 micron of per minute, silicon dioxide to the etch-rate (selection) of chromium film than reaching more than 100.
This practical embodiments is subject to silicon dioxide film 73 and deposits the stress that is produced comprehensively, and the microsphere lens embedding seat of being reached highly is 30 microns, and blocked up silicon dioxide film deposition can cause wafer to break.Adopt low stress mode of deposition or thicker wafer can further thicken silicon dioxide film 73, improve microsphere lens embedding seat height, allow the microsphere lens of carrying larger diameter.In addition, selecting for use of dielectric layer 73, also can adopt ORMOCER s rotary coating that the Cyclotene-3000 series of producing as Dow Chemical company, SU-8 that MicroChem company produces or Microresist Technology company produce on wafer, equally again the definition and dry-etching formation microsphere lens embedding seat 73a by etch shield 74.
The 4th embodiment:
Present embodiment utilizes thick dielectric substance layer collocation pre-mould of resistance material lenticule and dry-etching manufacture craft, forms and includes the lenticular microsphere lens embedding of dielectric material seat, can embed the back at microsphere lens and form two-lens system, further promotes coupling tolerate degree.Figure 8 shows that the method for making diagrammatic cross-section of the 4th embodiment, this is for getting single grained region mapping on the wafer, and actual fabrication technology is all carried out on the full wafer wafer.Among Fig. 8 A, 81 is the top electrode of device for testing light, and 82 is the optically-coupled hole of device for testing light.Thick dielectric substance layer 83 is deposited or is coated on the wafer, on dielectric medium 83, define an etch shield 84 (this shielding pattern such as Fig. 3 the cited case) and a pre-mould 85 of resistance material lenticule by hot reflux (Thermal Reflow) formation more in regular turn.Remove the dielectric mediums that shield outside 84 by dry-etching 86, control by photoresistance and dielectric medium etching selectivity simultaneously, with the pre-mould 85 external form inscription rubbings of photoresistance lenticule on dielectric substance layer 83, can form the microsphere lens embedding seat 83a (Fig. 8 B) of a dielectric material, and in be contained in dielectric material lenticule 83b in the embedding seat, both centers are all corresponding to the optically-coupled center of device for testing light.The inside diameter D of suitable embedding seat is 100 to 150 microns in the present embodiment, and suitably embedding seat height H is 100 to 150 microns.
The SU-8 series thick film photoresistance that one of embodiment of the invention can utilize rotary coating MicroChem company to produce forms dielectric layer 83, and its thickness is 130 microns.After carrying out comprehensive ultraviolet exposure and locating the heat reason, chromium (Cr) metal is lifted off or chromium metal etch manufacture craft forms a chromium film etch shield 84 to utilize general little shadow manufacture craft to arrange in pairs or groups thereon earlier, and its thickness is about 3000 dusts.Then the ma-P series photoresistance of producing with Microresist Technology again carries out little shadow manufacture craft, under 100 ℃, carry out 10 minutes hot reflux manufacture craft through the pattern of gained after exposure, development, the photographic fixing, promptly form the pre-mould 85 of a resistance material lenticule, the optical axis alignment of the pre-mould 85 of this photoresistance lenticule is in the optically-coupled center of device for testing light.SU-8 dielectric layer 83 is etched to the active-ion-etch equipment (RIE) that adopts, under the gas composition of perfluoroethane (C2F6) and oxygen (O2), etch-rate can reach about 1～2 micron of per minute, and SU-8 is bordering on 1 to the etch-rate (selection) of the pre-mould 85 of ma-P photoresistance lenticule than may command.
Selecting for use of dielectric layer 83, also can adopt as the Cyclotene-3000 series of Dow Chemical company production or the ORMOCER s of Microresist Technology company production.
Above-mentioned explanation only is specifying of the specific embodiment of the invention, and right persons skilled in the art can be understood, and any unsubstantiality change or conversion all comprise within the scope of the present invention, and this embodiment is not in order to limit claim of the present invention.
Claims (9)
1. a method that improves photoelectric element coupling tolerate degree is characterized in that, it passes through to form microsphere lens embedding seat on photovalve, and the microsphere lens embedding is fixed in this embedding seat.
2. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, this photovalve is face coupled mode testing light element, surface emitting type light-emitting component or face coupled mode light varying element.
3. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, this photovalve is single element or array element.
4. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, the embedding seat of this microsphere lens embedding seat is centrally aligned to the photovalve coupling aperture.
5. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, the embedding seat inner edge of this microsphere lens embedding seat is that circle or regular polygon are so that microsphere lens is positioned in the embedding seat coupling aperture of optical axis alignment photovalve automatically.
6. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, this microsphere lens embedding seat can be by the photosensitive high molecular material in light shield down after the exposure, through the development etch and straight forming; Or by after earlier forming the photoresistance mould, metal is deposited in the mould, remove the photoresistance mould again and the metal displacer seat of microsphere lens; Also or see through the definition of etch shield, by the dry-etching of dielectric medium, form the microsphere lens embedding seat of dielectric material.
7. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, the upper limb of this microsphere lens embedding seat can form lead angle and embed with the guiding microsphere lens.
8. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, the embedding seat sidewall of this microsphere lens embedding seat leaves the usefulness that the gap supplied gas discharges or optical cement is inserted.
9. the method for raising photoelectric element coupling tolerate degree as claimed in claim 1 is characterized in that, the embedding seat inside of this microsphere lens embedding seat comprises the dielectric material lenticule that forms by semiconductor fabrication process.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112817099A (en) * | 2019-11-15 | 2021-05-18 | 财团法人工业技术研究院 | Silicon photon packaging structure |
| CN113728261A (en) * | 2019-04-26 | 2021-11-30 | 新加坡光科技私人有限公司 | Microsphere holder |
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2005
- 2005-08-15 CN CN 200510091899 patent/CN1731230A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113728261A (en) * | 2019-04-26 | 2021-11-30 | 新加坡光科技私人有限公司 | Microsphere holder |
| CN112817099A (en) * | 2019-11-15 | 2021-05-18 | 财团法人工业技术研究院 | Silicon photon packaging structure |
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