CN1702907A - Bandpass filter - Google Patents
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- CN1702907A CN1702907A CN 200410028603 CN200410028603A CN1702907A CN 1702907 A CN1702907 A CN 1702907A CN 200410028603 CN200410028603 CN 200410028603 CN 200410028603 A CN200410028603 A CN 200410028603A CN 1702907 A CN1702907 A CN 1702907A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
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- 229920002313 fluoropolymer Polymers 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
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Abstract
A bandpass filter includes a dielectric substrate, a resonator electrode that is provided on a portion of a plane at an intermediate height in the thickness direction of the dielectric substrate so as to oppose the top face of the dielectric substrate and includes an aperture, first and second ground electrodes provided over and under the resonator electrode, respectively, so as to oppose the resonator electrode with dielectric layers disposed therebetween and so as to sandwich the resonator electrode, input-output coupling electrodes coupled to the resonator electrode, input-output terminal electrodes that are provided on the outside surface of the dielectric substrate and are electrically connected to the input-output coupling electrodes, and a via-hole electrode that penetrates through the aperture in the thickness direction of the dielectric substrate so as not to be electrically connected to the resonator electrode and is electrically connected to the first and second ground electrodes.
Description
Background of invention
Invention field
The present invention relates to for example be used for the band pass filter of the wave band of communication equipment from the microwave to the millimeter wave, relate in particular to the band pass filter that is used for suppressing the false signal of generation according to the relation of the position between the grounding electrode resonator electrode.
Description of Related Art
The band pass filter of various bimodulus has been used as the band pass filter that uses in the high frequency band.
For example, the bimodule band-pass filter that comprises resonator electrode that discloses among the open No.2001-237610 of the special permission application of Japanese unexamined with aperture.Figure 17 A is a cross sectional front elevation and Figure 17 B is a plane graph, and the band pass filter of the bimodulus that discloses in this application schematically is shown.The band pass filter 101 of bimodulus comprises dielectric substrate 102.Resonator electrode 103 is arranged on the intermediate altitude place in the dielectric substrate 102.Resonator electrode 103 comprises aperture 103a (not forming the zone of electrode in resonator electrode 103).Resonator electrode 103 comprises the resonant mode of a plurality of nondegenerates (non-degenerate).Aperture 103a is aligned to resonant mode coupled to each other to form the band pass filter of bimodulus.Grounding electrode 104 and 105 is separately positioned under the upper surface of dielectric substrate 102 and on lower surface, thereby with respect to resonator electrode 103.With reference to figure 17B, input- output coupling electrode 106 and 107 is connected to resonator electrode 103.Though shown in Figure 17 A, input- output coupling electrode 106 and 107 does not extend to outside the resonator electrode 103, and be electrically connected to corresponding input-output termination electrode (not shown).
Usually, in band pass filter such as bimodule band-pass filter 101, wherein said band pass filter 101 comprise be arranged on the resonator electrode and under and have the dielectric layer of dielectric substrate to place therebetween grounding electrode, grounding electrode also is arranged on the side surface of dielectric substrate 102.Therefore, grounding electrode forms waveguide, and promptly resonator electrode 103 is arranged in the waveguide.Adopt this structure, only the shape according to waveguide produces resonance.As a result, this structure that comprises grounding electrode and be similar to waveguide is greater than resonator electrode 103.
The fundamental resonance that is caused by grounding electrode produces with the frequency less than the resonance frequency of resonator electrode 103, and higher mode resonance produces in the resonant mode crossover position that causes with resonator electrode 103 sequentially.This resonance that is caused by grounding electrode produces unwanted false signal in the bimodule band-pass filter 101, thereby can not realize good transmission characteristic.
Summary of the invention
In order to overcome the problems referred to above, preferred embodiment of the present invention provides a kind of band pass filter, and its stops unwanted false signal that the resonance by grounding electrode causes to reach good transmission characteristic.
According to preferred embodiment of the present invention, band pass filter comprises dielectric substrate, resonator electrode, first and second grounding electrodes, input-output coupling electrode, input-output termination electrode and through hole electrode.Resonator electrode is arranged on the part plane place at intermediate altitude place on the dielectric substrate thickness direction, thereby with respect to the upper surface of dielectric substrate, also comprises aperture.First and second grounding electrodes respectively be arranged on the thickness direction of dielectric substrate on the resonator electrode and under, thereby with respect to resonator electrode and there is dielectric layer to place therebetween, so that clamp resonator electrode.The input-output coupling electrode is coupled to resonator electrode.The input-output termination electrode is arranged on the outer surface of dielectric substrate and is electrically connected to the input-output coupling electrode.Through hole electrode passes aperture on the thickness direction of dielectric substrate, thereby is not electrically connected to resonator electrode but is electrically connected to first and second grounding electrodes.
Band pass filter preferably comprises second through hole electrode, and they are arranged in the zone outside the resonator electrode and are electrically connected to first and second grounding electrodes in the plane graph of resonator electrode.
Preferably, the configuration resonator electrode is to have a plurality of non-degenerate resonant modes, and is coupled to each other to form bimodule band-pass filter thereby these a plurality of resonant modes pass through aperture.
Preferably, resonator electrode is the toroidal cavity resonator electrode.In this case, the control Coupling point provides bimodule band-pass filter to the input-output coupling electrode.
The band pass filter of configuration preferred embodiment according to the present invention, thus at least the first and second grounding electrodes are arranged on the resonator electrode and under to clamp resonator electrode.Band pass filter comprises the through hole electrode that passes the aperture in the resonator electrode and is electrically connected to first and second grounding electrodes.Thereby the frequency of the unwanted false signal that the resonance by grounding electrode causes that moves through hole electrode realizes the good transmission characteristic that not influenced by false signal.
Second through hole electrode in the outer zone of resonator electrode make unwanted false signal that the resonance by grounding electrode produces away from the passband of band pass filter to realize transmission characteristic preferably.Even when the manufacturing mistake by band pass filter causes that chip size changes, the formation of second through hole electrode stops the variation of false signal frequency.Therefore, band pass filter has by making the less characteristic variations that mistake causes.
Thereby at the configuration resonator electrode when forming bimodule band-pass filter by aperture is coupled to each other to have a plurality of nondegenerate resonant mode resonant modes, band pass filter to the Coupling point of resonator electrode without any limiting and shape by selective resonance device electrode and aperture provides various frequency bandwidth characteristicses.
By the detailed description of following preferred embodiment and in conjunction with the accompanying drawings, other characteristics of the present invention, element, characteristic, step and advantage will become more obvious.
Summary of drawings
Figure 1A is the perspective view of the bimodule band-pass filter of first preferred embodiment according to the present invention;
Figure 1B is the bottom view of the bimodule band-pass filter of the present invention's first preferred embodiment;
Fig. 1 C is the cross-sectional side view of the bimodule band-pass filter of first preferred embodiment that X1-X1 along the line obtains among Figure 1B;
Fig. 2 is a plane graph, the resonator electrode of the bimodule band-pass filter of schematically illustrated the present invention's first preferred embodiment and input-output coupling electrode;
Fig. 3 illustrates the S parameter frequency characteristic in the structure, removes the first through hole electrode resonator electrode in this structure from the bimodule band-pass filter of the present invention's first preferred embodiment;
Fig. 4 illustrates the S parameter frequency characteristic in the structure, removes resonator electrode in this structure from the bimodule band-pass filter of the present invention's first preferred embodiment;
Fig. 5 illustrates the S parameter frequency characteristic of the bimodule band-pass filter of the present invention's first preferred embodiment;
Fig. 6 is a plane graph, and schematically illustrated known bimodule band-pass filter is used for comparison;
Fig. 7 illustrates the S parameter frequency characteristic of known bimodule band-pass filter among Fig. 6;
Fig. 8 A is a plane graph and Fig. 8 B is a cross sectional front elevation, the schematically illustrated Electric Field Distribution that does not have the known bimodule band-pass filter of through hole electrode;
Fig. 9 A is a plane graph and Fig. 9 B is a cross sectional front elevation; The Electric Field Distribution of the bimodule band-pass filter of schematically illustrated the present invention's first preferred embodiment;
Figure 10 A is the bottom view of the bimodule band-pass filter of second preferred embodiment according to the present invention;
Figure 10 B is the cross-sectional side view of the bimodule band-pass filter of second preferred embodiment that X2-X2 along the line obtains among Figure 10 A;
Figure 11 illustrates the S parameter frequency characteristic of the bimodule band-pass filter of the present invention's second preferred embodiment;
Figure 12 comprises schematic plan view, and the situation that the width of bimodule band-pass filter reduces is shown;
Figure 13 illustrates when removing resonator electrode and the S parameter frequency characteristic of the bimodule band-pass filter of first preferred embodiment when reducing width;
Figure 14 illustrates when removing resonator electrode and the S parameter frequency characteristic of the bimodule band-pass filter of second preferred embodiment when reducing width;
Figure 15 is the cross sectional front elevation that the modification of bimodule band-pass filter of the present invention is shown;
Figure 16 is the plane graph of another modification of schematically illustrated bimodule band-pass filter of the present invention; And
Figure 17 A is a cross sectional front elevation and Figure 17 B is a plane graph, schematically illustrated known bimodule band-pass filter.
Embodiment
Referring now to accompanying drawing preferred embodiment of the present invention is described.
Figure 1A is the perspective view of the bimodule band-pass filter 1 of first preferred embodiment according to the present invention.Figure 1B is the bottom view of bimodule band-pass filter.Fig. 1 C is the cross-sectional side view of the bimodule band-pass filter that X1-X1 along the line obtains among Figure 1B.
Bimodule band-pass filter 1 preferably comprises the dielectric substrate 2 of basic rectangle.Dielectric substrate 2 preferably is made of suitable dielectric material.This dielectric material comprises synthetic resin, such as fluoroplastics and media ceramic.
The resonator electrode 3 of this metallic film is provided with on the part plane at intermediate altitude place in the dielectric substrate 2.
Input- output coupling electrode 4 and 5 can be arranged in any suitable position, as long as they can be coupled to resonator electrode 3.That is, input- output coupling electrode 4 and 5 can place and the different height place of resonator electrode 3 height of living in.
In bimodule band-pass filter 1, first grounding electrode 6 is arranged on the upper level of dielectric substrate 2, thereby therebetween with respect to resonator electrode and dielectric layer.Though first grounding electrode 6 is placed in the dielectric substrate 2, this first grounding electrode can place on the upper surface of dielectric substrate 2.
Second grounding electrode 7 places under the lower surface of dielectric substrate 2, thereby with respect to resonator electrode 3 and there is dielectric layer therebetween.Will not place dielectric substrate 2 times by second grounding electrode 7.Second grounding electrode 7 can be embedded in highly place of one on the lower surface of media electrode 2.
Shown in Figure 1A, the 3rd grounding electrode 8 is arranged on the opposite side of dielectric substrate 2.The 3rd grounding electrode 8 is electrically connected to first grounding electrode 6 and second grounding electrode 7.
Shown in Fig. 1 C, first through hole electrode 9 is arranged to pass aperture 3a in the resonator electrode 3.First through hole electrode 9 is electrically connected to first grounding electrode 6 and second grounding electrode 7.Input-output coupling electrode 4 is electrically connected to input-output termination electrode 10 by third through-hole electrode 12, and input-output coupling electrode 5 is electrically connected to input-output termination electrode 11 by third through-hole electrode 13.Input- output termination electrode 10 and 11 is arranged under the bottom surface of dielectric substrate 2.
Operation and effect according to the bimodule band-pass filter 1 of first preferred embodiment will be described now.
According to first preferred embodiment with input signal when one of input- output termination electrode 10 and 11 are provided to bimodule band-pass filter 1, produce a plurality of nondegenerate resonant modes in resonator electrode 3, wherein said bimodule band-pass filter 1 comprises resonator electrode 3 and the aperture 3a that is provided with as mentioned above.Resonant mode is coupled to each other by aperture 3a, thereby another electrode of input- output termination electrode 10 and 11 produces pass band filter characteristic.
As mentioned above, resonator electrode 3 is centered on by first grounding electrode 6, second grounding electrode 7 and the 3rd grounding electrode 8 in such known bimodule band-pass filter.More particularly, first grounding electrode 6, second grounding electrode 7 and the 3rd grounding electrode 8 form waveguide, and thus, it is pseudo-(spurious) that the resonance in the waveguide tends to.
On the contrary, adopt formation according to bimodule band-pass filter 1, the first through hole electrode 9 of first preferred embodiment to suppress the unwanted false signal that the resonance by first grounding electrode 6, second grounding electrode 7 and the 3rd grounding electrode 8 causes.This will be described referring to figs. 3 to 7 according to particular experiment.
In following experiment, the size of used dielectric substrate is that the long 1.0mm of the wide 3.2mm of 2.5mm is thick approximately, and wherein said dielectric substrate 2 is by comprising that magnesium and silicon are that the pottery of main component is made.Resonator electrode 3 has the long size of the wide 1.5mm of about 1.4mm, and aperture 3a has the area of about 0.54mm2.
Fig. 3 is illustrated in the S parameter frequency characteristic in the structure, has removed the resonator electrode 3 and first through hole electrode 9 in this structure from the bimodule band-pass filter 1 according to first preferred embodiment.Fig. 3 illustrates the frequency place that is resulted from about 26.46GHz of characteristic S11 by the resonance of arrow A indication.This resonance is corresponding to the resonance that structure produced with first grounding electrode 6, second grounding electrode 7 and the 3rd grounding electrode 8.More particularly, the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8 results from about 26.46GHz place.
Fig. 4 is illustrated in the S parameter frequency characteristic when only removing resonator electrode 3 from the bimodule band-pass filter 1 according to first preferred embodiment.That is, the structure of Fig. 4 is equal to the structure with transmission characteristic shown in Figure 3, except being provided with first through hole electrode 9.
Shown in the arrow A a among Fig. 4, first through hole electrode 9 fundamental resonance that generation causes by first to the 3rd grounding electrode 6 to 8 is set so that produce at the frequency place of about 31.32GHz.
Relatively illustrating between Fig. 3 and Fig. 4, the setting of first through hole electrode 9 make the frequency of the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8 increase about 5GHz.
Therefore, first through hole electrode 9 moves the frequency of the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8 and the frequency of higher mode resonance to upper frequency.
Fig. 5 illustrates the S parameter frequency characteristic of Figure 1A to the structure shown in the 1C.With reference to figure 5, the resonant mode about about 25.5GHz frequency is represented the resonant mode by resonator electrode 3 generations.Resonant mode is coupled to each other by the formation of aperture 3a, thereby realizes pass band filter characteristic.On the contrary, the resonance that first to the 3rd grounding electrode 6 to 8 causes results from the frequency place of about 30.73GHz, shown in arrow A b.Therefore, as shown in Figure 5, be used to provide the resonance frequency of the resonator electrode 3 of pass band filter characteristic to be different from the resonance frequency of first to the 3rd grounding electrode 6 to 8.
For relatively, measured the transmission characteristic of known bimodule band-pass filter 121 shown in Figure 6.Bimodule band-pass filter 121 have with Figure 1A to the identical structure of the bimodule band-pass filter 1 of 1C, except having removed first through hole electrode 9.
Fig. 7 illustrates the S parameter frequency characteristic of bimodule band-pass filter 121.With reference to figure 7, in known bimodule band-pass filter 121, the resonance that is caused by resonator electrode 3 results from about the frequency of about 27.7GHz.The resonance that grounding electrode causes results from about 25.58GHz place and about 32.49GHz place, shown in arrow A c and Ad.That is, the resonance of fundamental resonance that is caused by grounding electrode and higher mode results from the both sides of passband of bimodule band-pass filter 121.
Relatively illustrating between Fig. 5 and Fig. 7, in bimodule band-pass filter 1 according to first preferred embodiment, the effect that first through hole electrode 9 has been eliminated the unwanted false signal that the resonance by first to the 3rd grounding electrode 6 to 8 causes realizes good transmission characteristic thus.
Configuration through hole electrode 9 so that the resonance that causes by first to the 3rd grounding electrode 6 to 8 that is arranged to around resonator electrode result from outside the passband of bimodule band-pass filter, as mentioned above.The effect as the unwanted false signal that is caused by the resonance of first to the 3rd grounding electrode 6 to 8 in first preferred embodiment has been eliminated in this formation, has realized good transmission characteristic thus.
Owing to first to the 3rd grounding electrode 6 to 8 is set with around resonator electrode 3 in the bimodule band-pass filter 1 according to first preferred embodiment, thereby suppressed from the radiation of resonator electrode 3 and the insertion loss of the filter that suppressed to be caused by radiation loss increases and stops bimodule band-pass filter to become noise source.Also suppressed when other electronic section, shell or other parts be provided with the moving of the filter characteristic that produces when the bimodule band-pass filter 1.
Below will describe by the reason that first through hole electrode 9 moves the false signal that the resonance by first to the 3rd grounding electrode 6 to 8 causes is set.
Fig. 8 A is a plane graph and Fig. 8 B is a cross sectional front elevation, the Electric Field Distribution at the fundamental resonance frequency place of first to the 3rd grounding electrode 6 to 8 in the schematically illustrated known bimodule band-pass filter, the Electric Field Distribution at promptly about 26.46GHz place.In this Electric Field Distribution, electric field is strengthened with the density of black-tape.Shown in Fig. 8 A and 8B, highfield results from the mid portion on the first type surface of dielectric substrate.
On the contrary, Fig. 9 A plane graph and Fig. 9 B is a cross sectional front elevation, schematically illustrated Electric Field Distribution according to the fundamental resonance frequency place of first to the 3rd grounding electrode 6 to 8 in the bimodule band-pass filter 1 of first preferred embodiment with first through hole electrode 9, the Electric Field Distribution at promptly about 31.32GHz place.Shown in Fig. 9 A and 9B, first through hole electrode 9 of the pars intermedia office of the first type surface of dielectric substrate 2 has been eliminated the highfield among Fig. 8.
In other words, because first through hole electrode 9 is shorted to first grounding electrode 6 and second grounding electrode 7, therefore do not produce electric field on every side and wherein in the zone that first through hole electrode 9 is set.Therefore, according to first preferred embodiment, first through hole electrode 9 stops the strong resonance of the pars intermedia office of dielectric substrates 2 to produce, or stops the periphery of first through hole electrode 9 to help the resonance that is caused by first to the 3rd grounding electrode 6 to 8.As a result, thus the structure that forms waveguide has reduced the frequency that size increases the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8.
Figure 10 A is the bottom view of the bimodule band-pass filter 21 of second preferred embodiment according to the present invention.Figure 10 B is the cross-sectional side view of the bimodule band-pass filter 21 that X2-X2 along the line obtains among Figure 10 A.
To dispose the bimodule band-pass filter 21 of second preferred embodiment, except second through hole electrode 22 to 25 is set with the same mode of the bimodule band-pass filter 1 of first preferred embodiment.In the plane graph of bimodule band-pass filter 21, a plurality of second through hole electrodes 22 to 25 are arranged on outside the zone that resonator electrode 3 is set.Second through hole electrode 22 to 25 is electrically connected to first grounding electrode 6 and second grounding electrode 7, and is the same with first through hole electrode 9.
In bimodule band-pass filter 21, the unwanted false signal that second through hole electrode 22 to 25 will be caused by the resonance of first to the 3rd grounding electrode 6 to 8 moves to reduce the effect of false signal to upper frequency.This will described below with reference to Figure 11 to 13.
Figure 11 illustrates the S parameter frequency characteristic of bimodule band-pass filter 21.Among Fig. 5, the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8 results from about 30.73GHz place, transmission characteristic according to the bimodule band-pass filter 1 of first preferred embodiment is shown, simultaneously in Figure 11, the fundamental resonance that is caused by first to the 3rd grounding electrode 6 to 8 results from the upper frequency place of about 33.56GHz.With reference to Figure 11, the resonance that is caused by resonator electrode 3 results from around the 25.5GHz.
In the bimodule band-pass filter 21 according to second preferred embodiment, the unwanted false signal that the interpolation of second through hole electrode 22 to 25 will be caused by the resonance of first to the 3rd grounding electrode 6 to 8 is to the effect of higher frequency shifts with further reduction false signal.This is because second through hole electrode 22 to 25 produces the zone that does not help second through hole electrode 22 to 25 resonance on every side, thereby compare the size that reduces the structure that forms waveguide with the bimodule band-pass filter 1 of first preferred embodiment, and increased the resonance frequency of first to the 3rd grounding electrode 6 to 8.
Adopt bimodule band-pass filter 21, can reduce by making the frequency change that mistake causes.Suppose owing to make the width W of mistake bimodule band-pass filter to be reduced to W1, shown in the figure on Figure 12 right side.
Figure 13 illustrates when removing resonator electrode 3 and the S parameter frequency characteristic of bimodule band-pass filter 1 when reducing width as mentioned above.Figure 14 illustrates when removing resonator electrode 3 and the S parameter frequency characteristic of bimodule band-pass filter 21 when reducing width as mentioned above.
Relatively illustrating between Figure 13 and Figure 14, when because the manufacturing mistake of bimodule band-pass filter 1 when causing that width reduces, the fundamental resonance frequency of the false signal that is caused by the resonance of first to the 3rd grounding electrode 6 to 8 moves to about 32.87GHz from about 31.32GHz.
Relatively illustrating between Figure 11 and Figure 14, when the width of the bimodule band-pass filter 21 of second preferred embodiment reduced, the fundamental resonance frequency of the false signal that is caused by the resonance of first to the 3rd grounding electrode 6 to 8 moved to about 33.98GHz from about 33.56GHz.
In bimodule band-pass filter 21, with the mobile phase ratio of bimodule band-pass filter 1, the resonance frequency of false signal moves when having reduced the chip size variation.In other words, in bimodule band-pass filter 21, reduced and made the chip size that mistake causes and change the frequency change of the false signal that causes, thereby reduced the variation in the transmission characteristic.
As mentioned above, below will be described in the reason of the frequency change that has reduced the false signal that causes by the chip size variation in the bimodule band-pass filter 21.
In bimodule band-pass filter 1, the gap size in the middle of change width changes between two vertical sides of first through hole electrode 9 and bimodule band-pass filter 1.Because the resonance in transverse electric (TE) pattern depends on gap size, so frequency changes with the variation of the size of space.
On the contrary, in bimodule band-pass filter 21, because by second through hole electrode, 22 to 25 fixed intervals around resonator electrode and middle first through hole electrode 9, so any variation of circuit wafer width can not cause the variation of gap size.Therefore, in bimodule band-pass filter 21, suppressed by making the false signal variation that mistake causes.
Figure 15 illustrates the bimodule band-pass filter 26 of modification.As shown in figure 15, first grounding electrode 6 and second grounding electrode 7 are arranged in the dielectric substrate 2.
Though as the above-mentioned aperture that is disclosed in open is coupled with the pass band filter characteristic of the bimodule band-pass filter 21 of the bimodule band-pass filter 1 that first preferred embodiment is provided and second preferred embodiment a plurality of nondegenerate resonant modes, the present invention does not need this band pass filter.For example, the present invention can also be applied to the known bimodule band-pass filter among Figure 16, has toroidal cavity resonator electrode 31.Adopt known bimodule band-pass filter, control Coupling point 32 and 33 provides pass band filter characteristic to toroidal cavity resonator electrode 31.Feedback circuit 34 is set controls the degree that is coupled in the known bimodule band-pass filter of Figure 16.
As mentioned above, the present invention can be used for various band pass filters, uses the resonator electrode with different shape, as long as this resonator electrode has corresponding aperture.
The invention is not restricted to above-mentioned preferred embodiment, but can make amendment within the scope of the appended claims.In addition, the technology that is disclosed in the above-mentioned preferred embodiment can be used in combination on demand.
Claims (11)
1. a band pass filter is characterized in that, comprising:
Dielectric substrate;
Resonator electrode, thus it is relative and comprise aperture to be arranged on the part plane at intermediate altitude place on the described dielectric substrate thickness direction upper surface with dielectric substrate;
First and second grounding electrodes, be arranged in respectively on the thickness direction of dielectric substrate on the resonator electrode and under, thereby relative with resonator electrode and have dielectric layer to place therebetween, thereby resonator electrode is sandwiched the centre;
The input-output coupling electrode is coupled to resonator electrode;
The input-output termination electrode is arranged on the outer surface of dielectric substrate and is electrically connected to the input-output coupling electrode; And
Through hole electrode, it passes described aperture so that be not electrically connected with resonator electrode on the thickness direction of dielectric substrate, and it is electrically connected to described first and second grounding electrodes.
2. band pass filter as claimed in claim 1 is characterized in that, also comprises second through hole electrode, and it is arranged in the zone outside the resonator electrode in the plane graph of resonator electrode, and it is electrically connected to first and second grounding electrodes.
3. band pass filter as claimed in claim 1 is characterized in that, described resonator electrode is aligned to has a plurality of nondegenerate resonant modes, thereby described a plurality of resonant mode is coupled to form bimodule band-pass filter by aperture.
4. band pass filter as claimed in claim 1 is characterized in that, described resonator electrode is the toroidal cavity resonator electrode.
5. band pass filter as claimed in claim 1 is characterized in that, first and second grounding electrodes place respectively on the upper surface and lower surface of dielectric substrate.
6. band pass filter as claimed in claim 1 is characterized in that first and second grounding electrodes place in the dielectric substrate respectively.
7. band pass filter as claimed in claim 1 is characterized in that, described resonator electrode has the on the whole shape of rectangle.
8. band pass filter as claimed in claim 1 is characterized in that, described input-output coupling electrode places on the part plane at intermediate altitude place on the thickness direction of dielectric substrate.
9. band pass filter as claimed in claim 1 is characterized in that, aperture places the pars intermedia office of resonator electrode.
10. band pass filter as claimed in claim 1 is characterized in that first and second grounding electrodes are greater than resonator electrode.
11. band pass filter as claimed in claim 1 is characterized in that, also comprises the through hole electrode that at least one is additional, it is connected at least one input-output electrode.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003061937 | 2003-03-07 | ||
| JP2003061937 | 2003-03-07 | ||
| JP2003398895 | 2003-11-28 |
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| Publication Number | Publication Date |
|---|---|
| CN1702907A true CN1702907A (en) | 2005-11-30 |
| CN100334776C CN100334776C (en) | 2007-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100286039A Expired - Lifetime CN100334776C (en) | 2003-03-07 | 2004-03-05 | Bandpass filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101606277B (en) * | 2007-07-24 | 2013-01-16 | 株式会社村田制作所 | Dielectric filter |
| CN103236572A (en) * | 2013-02-05 | 2013-08-07 | 南通大学 | Compact microwave distributed double-mold band-pass filter |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4686496A (en) * | 1985-04-08 | 1987-08-11 | Northern Telecom Limited | Microwave bandpass filters including dielectric resonators mounted on a suspended substrate board |
| JP3395754B2 (en) * | 2000-02-24 | 2003-04-14 | 株式会社村田製作所 | Dual-mode bandpass filter |
-
2004
- 2004-03-05 CN CNB2004100286039A patent/CN100334776C/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101606277B (en) * | 2007-07-24 | 2013-01-16 | 株式会社村田制作所 | Dielectric filter |
| CN103236572A (en) * | 2013-02-05 | 2013-08-07 | 南通大学 | Compact microwave distributed double-mold band-pass filter |
| CN103236572B (en) * | 2013-02-05 | 2015-10-21 | 南通大学 | The distributed bimodule band-pass filter of a kind of Compact microwave |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100334776C (en) | 2007-08-29 |
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