CN1694150A - Light emitting panel and light emitting display - Google Patents
Light emitting panel and light emitting display Download PDFInfo
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- CN1694150A CN1694150A CNA2005100741599A CN200510074159A CN1694150A CN 1694150 A CN1694150 A CN 1694150A CN A2005100741599 A CNA2005100741599 A CN A2005100741599A CN 200510074159 A CN200510074159 A CN 200510074159A CN 1694150 A CN1694150 A CN 1694150A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 239000003990 capacitor Substances 0.000 claims abstract description 49
- 230000005540 biological transmission Effects 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 79
- 229920005591 polysilicon Polymers 0.000 description 79
- 239000010408 film Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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Abstract
A display device having components that are efficiently arranged in a pixel. A pixel circuit includes a capacitor for charging a voltage which corresponds to a data signal transmitted from a data line. A first transistor of the pixel circuit outputs a current corresponding to the voltage charged in the capacitor. A plurality of emit elements emit a light corresponding to the current outputted from the driving transistor. A plurality of emit control transistors are coupled between the first transistor and the plurality of emit elements. The emit control transistors include a plurality of semiconductor layers having inner resistances that are substantially the same as each other.
Description
Technical field
The present invention relates to display device.More specifically, the present invention relates to use the display of organic electroluminescence of organic electroluminescent (electroluminescence) (after this being called " EL ") material.
Background technology
Usually, organic electroluminescent (EL) display electricity excites organic fluorescent compounds, thereby luminous.Organic radiated element (perhaps organic transmitter unit) is with the matrix form of the n * m formation OLED panel of arranging, and this EL display board is by voltage or current drives display image data.
Organic radiated element has the characteristic of diode, therefore also is called Organic Light Emitting Diode (OLED).Organic radiated element comprises anode (ITO), organic film and cathode layer (metal).Organic film has sandwich construction, and this sandwich construction comprises emission layer (EML), electron transfer layer (ETL) and is used to keep balance between electronics and the hole and improves the hole transmission layer (HTL) of emission efficiency.In addition, organic radiated element comprises electron injecting layer (EIL) and hole injection layer (HIL).Organic radiated element is with the form of the n * m matrix formation OLED panel of arranging.
The method that drives OLED panel comprises passive matrix method and active matrix method, and the active matrix method is used thin film transistor (TFT) (TFT).The passive matrix method comprises anode and negative electrode, the selection wire that forms (perhaps across) intersected with each other or perpendicular and drives OLED panel.The active matrix method comprises a plurality of TFT of conducting successively and drives OLED panel that these a plurality of TFT are according to being used to select the signal of sweep trace to be connected respectively to data line and sweep trace.
After this, the image element circuit of common active matrix OLED display is described.
Fig. 1 illustrates image element circuit, one of n * m pixel, and it is positioned at first row, first row.
As shown in Figure 1, a pixel 10 comprises three sub-pixel 10r, 10g and 10b, and these three sub-pixel 10r, 10g and 10b comprise organic EL OLEDr, OLEDg and the OLEDb that is respectively applied for red-emitting (R), green glow (G) and blue light (B) respectively.In addition, in this structure, sub-pixel is arranged into strip form, and sub-pixel 10r, 10g and 10b are connected to each data line D1r, D1g and D1b and common scanning line S1.
Driving transistors M11r is connected between the anode of supply voltage VDD and organic EL OLEDr, and is used for luminous electric current for organic EL OLEDr transmission.The negative electrode of organic EL OLEDr is connected to voltage VSS, and voltage VSS is lower than supply voltage VDD.Current amount flowing is controlled by the data voltage that applies by switching transistor M12r among the driving transistors M11r.Capacitor C1r is connected between the source electrode and grid of transistor M11r, and the voltage that inner control applies during being scheduled to.Be used to transmit conducting/cut-out and select the sweep trace S1 of signal to be connected to the grid of transistor M12r, be used to transmit the source electrode that is connected to transistor M12r with the data line D1r of the corresponding data voltage of red sub-pixel 10r.
Here, switching transistor M12r response imposes on the selection signal conduction of grid.Then, data voltage V
DATAImpose on the grid of transistor M11r from data line D1r by transistor M12r.Then, corresponding to the voltage V that between the grid of transistor M11r and source electrode, is filled by capacitor C1r
GS, electric current I
OLEDFlow to (and/or by) transistor M11r.Organic EL OLEDr emission is corresponding to electric current I
OLEDRuddiness.The electric current that flows to organic EL OLEDr calculates according to following equation 1.
[equation 1]
Here, V
THBe the threshold voltage of transistor M11r, β is a constant.
Shown in equation 1, offer organic EL OLEDr in the image element circuit shown in Figure 1 corresponding to the electric current of data voltage, and organic EL OLEDr emission is corresponding to the ruddiness of the brightness of the electric current that provides.Here, the data voltage that is provided has the multilevel voltage value in the preset range, thereby shows particular gray level.
Like this, in OLED display, a pixel 10 comprises three sub-pixel 10r, 10g and 10b, and each sub-pixel comprises driving transistors M11r, M11g or M11b, switching transistor M12r, M12g or M12b, and capacitor C1r, C1g or C1b, be used to drive organic EL OLEDr, OLEDg or OLEDb.And each sub-pixel is connected to the data line that is used for transmission of data signals and is used to transmit supply voltage V
DDPower lead.
Therefore, the line that much is used for to transistor and capacitor transmission voltage and signal need be set in each pixel, arrange that in a pixel all lines have difficulties.
Summary of the invention
In example embodiment of the present invention, provide a kind of its element to be arranged on active display in the pixel effectively.
In order to illustrate above-mentioned and other characteristics, according to an aspect of the present invention, a kind of display device is provided, and it comprises the many data lines that are used to transmit many sweep traces selecting signal, are used for transmission of data signals and a plurality of image element circuits that are connected with data line with this sweep trace.Here, at least one image element circuit comprises capacitor, driving transistors, a plurality of radiated element and a plurality of emission control transistor.Capacitor charging and the corresponding voltage of data-signal that comes from corresponding data lines transmission.Corresponding to the voltage drive transistor output current that is filled in the capacitor.The a plurality of radiated elements of electric current corresponding to driving transistors output are luminous.A plurality of emission control transistors are connected between driving transistors and a plurality of radiated element.Here, the emission control transistor comprises a plurality of semiconductor layers with substantially the same each other internal resistance.
In addition, the length breadth ratio of each semiconductor layer can be substantially the same with the length breadth ratio of another semiconductor layer, and two radiated elements in a plurality of radiated elements can be distinguished a kind of light in red-emitting, green glow and the blue light in response to the electric current of driving transistors output.
Each formation can comprise the corresponding transistorized source region of emission control length, channel region length and a drain region length with the length of a corresponding semiconductor layer of emission control transistor.Can with the vertical substantially direction of the direction of measuring semiconductor layer length on, measure the width that each forms a corresponding transistorized semiconductor layer of emission control.
In addition, at least two semiconductor layers in a plurality of semiconductor layers can be set to be substantially parallel to each other.
According to another aspect of the present invention, provide a kind of display device, it comprises the many data lines that are used to transmit many sweep traces selecting signal, are used for transmission of data signals and a plurality of image element circuits that are connected with data line with this sweep trace.Here, be arranged at least one image element circuit in the pixel region and comprise first, second and the 3rd radiated element, first, second and the 3rd semiconductor layer and first, second and the 3rd control electrode line.First, second and the 3rd radiated element comprise the pixel electrode that is applied in electric current, are used for corresponding to the galvanoluminescence that is applied.First, second and the 3rd semiconductor layer are connected to the pixel electrode of first, second and the 3rd radiated element respectively by first, second and the 3rd contact hole.First, second and the 3rd control electrode line insulate and intersect with first, second and the 3rd semiconductor layer, and substantially parallel each other.The length breadth ratio of first semiconductor layer, second semiconductor layer and the 3rd semiconductor layer is substantially the same each other.
First semiconductor layer can form the first emission control transistor with the insulated trenches district that intersects with the first control electrode line, second semiconductor layer can form the second emission control transistor with the insulated trenches district that intersects with the second control electrode line, and the 3rd semiconductor layer can form the 3rd emission control transistor with the insulated trenches district that intersects with the 3rd control electrode line.
In addition, each first, second and the length of the 3rd semiconductor layer can comprise source region length, channel region length and the drain region length of one of corresponding first, second and the 3rd emission control transistor.Can be on the direction vertical substantially with measuring corresponding first, second and the direction of one of the 3rd semiconductor layer length, measure each first, second and the width of the 3rd semiconductor layer.
According to a further aspect of the present invention, provide a kind of display device, comprise the many data lines that are used to transmit many sweep traces selecting signal, are used for transmission of data signals and a plurality of image element circuits that are connected with data line with this sweep trace.Here, at least one image element circuit comprises first capacitor, the first transistor, first, second and the 3rd radiated element and first, second and the 3rd emission control transistor.Charging of first capacitor and the voltage that data-signal is corresponding that comes from corresponding data lines transmission.The first transistor output is corresponding to the electric current of institute's charging voltage in first capacitor.Corresponding to luminous from the electric current of the first transistor output first, second and the 3rd radiated element, and first, second and the 3rd emission control transistor are connected between the first transistor and first, second and the 3rd radiated element.Here, forming transistorized first semiconductor layer of first emission control is provided with about forming transistorized the 3rd semiconductor layer of the 3rd emission control symmetrically with transistorized second semiconductor layer of formation second emission control usually.
Two-layer at least semiconductor layer in first, second and the 3rd semiconductor layer can be parallel to each other basically, and can the mix impurity of same type of first, second and the 3rd semiconductor layer that form first, second and the 3rd radiated element.
Here, at least one image element circuit may further include transistor seconds, the 3rd transistor and second capacitor.Transistor seconds can be connected between the node between the control electrode of the first transistor and the first transistor and first, second and the 3rd emission control transistor.The 3rd transistor can have first electrode of first electrode that is connected to first capacitor and be connected to second electrode of second electrode of first capacitor.Second capacitor can have first electrode that is connected to the 3rd transistorized second electrode and be connected to second electrode of the control electrode of the first transistor.
According to another aspect of the present invention, provide a kind of display device, comprise many data lines of being used to transmit many sweep traces selecting signal, being used for transmission of data signals and be connected and be arranged to a plurality of image element circuits of matrix form with data line with this sweep trace.Here, be arranged at least one image element circuit in the pixel region and comprise first, second and the 3rd radiated element, semiconductor layer and first, second and the 3rd control electrode line.First, second and the 3rd radiated element comprise the pixel electrode that is applied in electric current, are used for corresponding to the galvanoluminescence that is applied.Semiconductor layer comprises by first contact hole and is connected to first semiconductor layer regions of the pixel electrode of first emitting element, is connected to second semiconductor layer regions of pixel electrode of second radiated element and the 3rd semiconductor layer regions that is connected to the pixel electrode of the 3rd radiated element by the 3rd contact hole by second contact hole.The insulation of first, second and the 3rd control electrode line intersects with semiconductor layer and parallel to each other basically.Here, first semiconductor layer is provided with about second semiconductor layer symmetrically with the 3rd semiconductor layer usually.
Here, at least one semiconductor layer regions in first, second and the 3rd semiconductor layer regions can be arranged essentially parallel at least one data lines.
At least one semiconductor layer regions in first, second and the 3rd semiconductor layer regions can be arranged essentially parallel at least one sweep trace.
Description of drawings
Accompanying drawing and instructions illustrate example embodiment of the present invention, and are used from explanation principle of the present invention with this explanation one.
Fig. 1 illustrates the image element circuit of traditional luminescence display panel;
Fig. 2 is the synoptic diagram according to the OLED display of illustrated embodiments of the invention;
Fig. 3 illustrates the equivalent electrical circuit according to the image element circuit of illustrated embodiments of the invention;
Fig. 4 is the arrangenent diagram of the image element circuit of first example embodiment according to the present invention;
Fig. 5 is along the cross-sectional view of I-I ' in Fig. 4;
Fig. 6 is along the cross-sectional view of II-II ' in Fig. 4;
Fig. 7 is the arrangenent diagram of the image element circuit of second example embodiment according to the present invention.
Embodiment
In detailed description subsequently, simply illustrate and illustrated certain typical embodiment of the present invention by synoptic diagram.As what those skilled in the art will recognize that, described example embodiment can be adjusted with different forms, and does not break away from main idea of the present invention or scope.Therefore, accompanying drawing and explanation should see and lay down a definition itself, rather than restrictive.
In instructions, the part that does not illustrate in part shown in the accompanying drawing or the accompanying drawing may be discussed not, because they are dispensable for understanding the present invention fully.Identical Reference numeral is represented similar elements.Thickness is exaggerated to be clearly shown which floor and the several districts in the accompanying drawing more.When layer, film, plate etc. are said become be positioned at another part " on " time, can think that other part is arranged is therebetween.
In addition, several terms of definition sweep trace." current scan line " is meant the sweep trace of the current selection signal of transmission, and " sweep trace before " is meant the sweep trace of the selection signal before the current selection signal of transmission.
In addition, " current pixel " is meant the pixel luminous according to the selection signal of current scan line, " pixel before " is meant the basis luminous pixel of selection signal of sweep trace before, and " next pixel " is meant the pixel luminous according to the selection signal of next root sweep trace.
As shown in Figure 2, the OLED display according to illustrated embodiments of the invention comprises display board 100, scanner driver 200, mission controller 300 and data driver 400.Display board 100 is included in many sweep trace S0, S1...Sk...Sn and the Duo Gen launch-control line E1...Ek...En that is provided with on the line direction, many data lines D1...Dk...Dm that on column direction, is provided with and many power leads that are used to apply supply voltage VDD, and a plurality of pixel 110.Each pixel 110 is formed on the pixel region place that is limited or centered on by any two sweep trace Sk-1 and Sk and any two adjacent data line Dk-1 and Dk, and drives pixel 110 according to the signal that comes from current scan line Sk, sweep trace Sk-1, launch-control line Ek and data line Dk transmission before.And every transmit scan line E1 is made up of three launch-control lines to En that (for example E1 comprises E1r, E1g and E1b, and En comprises Enr, Eng and Enb, and Ek comprises Ekr, Ekg and Ekb, as shown in Figure 3).
Scanner driver 200 applies successively and is used to select the selection signal of corresponding line to give sweep trace S0 to Sn, thereby data-signal can impose on the pixel of corresponding line.Mission controller 300 applies the emissioning controling signal of the emission that is used to control organic EL OLEDr shown in Figure 3, OLEDg and OLEDb successively and gives launch-control line E1 to En.As long as apply the selection signal successively, data driver 400 applies the data-signal corresponding with the pixel that has applied the line of selecting signal and gives data line D1 to Dm.
Scanner driver 200, mission controller 300 and data driver 400 can be connected thereto the substrate that forms display board 100.Perhaps, scanner driver 200, mission controller 300 and/or data driver 400 can be formed directly on the glass substrate of display board 100.And the driving circuit of being made up of sweep trace, data line and transistor can be formed on the substrate of display board 100.And, scanner driver 200, mission controller 300 and/or data driver 400 can adhere to and be connected to the substrate of display board 100, as carrier band encapsulation (TCP), flexible print circuit (FPC) or be with automatic seam (tape automatic bonding, TAB) etc.
In exemplary embodiments of the present invention, a field can be divided into driven three son fields.Apply red, green and blue chromatic number certificate, and at three sons emission red, green and blue light.Here, scanner driver 200 applies successively and selects signal to give the sweep trace S0 that is in each sub-field to Sn.Mission controller 300 applies emissioning controling signal successively and gives launch-control line E1 to En, thereby each color organic EL element is in each height field emission.Data driver 400 applies corresponding to the data-signal of red, green and blue organic EL gives the data line D1 that is in three son fields to Dm.
After this, will be with reference to the concrete operation of figure 3 detailed descriptions according to the OLED display of illustrated embodiments of the invention.
Fig. 3 illustrates the equivalent electrical circuit of a pixel 110 in the OLED display of Fig. 2.In Fig. 3, for example, the k that is connected to any sweep trace Sk has been described
ThThe k of row and data line Dk
ThThe pixel Pk of row, all crystals pipe all is the p channel transistor.
As shown in Figure 3, comprise driving transistors M1, diode transistors M3, capacitor transistor M4, switching transistor M5, three organic EL OLEDr, OLEDg and OLEDb according to the image element circuit of illustrated embodiments of the invention and be used to control three emission control transistor M2r, the M2g of emission of three organic EL OLEDr, OLEDg and OLEDb and M2b and two capacitor Cst and Cvth.Launch-control line Ek is made up of three launch-control line Ekr, Ekg and Ekb.Emission control transistor M2r, M2g and M2b respond the emissioning controling signal by launch-control line Ekr, Ekg and Ekb transmission respectively, and optionally transmit the electric current that comes from driving transistors M1 transmission and give organic EL OLEDr, OLEDg and OLEDb.
Particularly, its grid is connected to current scan line Sk and source electrode is connected to the transistor M5 of data line Dk, the selection signal that response comes from sweep trace Sk transmission, and the data voltage that applies from data line Dk of transmission first electrode or the Node B of giving capacitor Cvth.Transistor M4 responds from the next selection signal of sweep trace Sk-1 transmission before, and the Node B of capacitor Cvth is connected to power vd D.Transistor M3 is connected between the drain electrode of second electrode of capacitor Cvth or node A and transistor M1.Conducting makes transistor M1 diode connect to transistor M3 in response to the selection signal of sweep trace Sk-1 transmission before.The grid that is used to drive the driving transistors M1 of organic EL OLED (for example OLEDr, OLEDg and/or OLEDb) is connected to the node A of capacitor Cvth, and its source electrode is connected to power vd D.Driving transistors M1 imposes on the electric current of the OLED of organic EL according to the Control of Voltage that imposes on grid.
And, first electrode of capacitor Cst is connected to power vd D, second electrode of capacitor Cst is connected to the drain electrode of transistor M4 near Node B or Node B, and first electrode of capacitor Cvth is connected to second electrode of capacitor Cst, make two capacitors in series, and second electrode of capacitor Cvth is connected to the grid of driving transistors M1 near node A or node A.
The drain electrode of driving transistors M1 is connected to the source electrode of emission control transistor M2r, M2g and M2b, and the grid of transistor M2r, M2g and M2b is connected respectively to launch-control line Ekr, Ekg and Ekb.The drain electrode of emission control transistor M2r, M2g and M2b is connected respectively to the anode of organic EL OLEDr, OLEDg and OLEDb.To have the power supply of being lower than V
DDThe power supply V of voltage level
SSImpose on the negative electrode of organic EL OLEDr, OLEDg and OLEDb.Negative voltage or ground voltage can be used for power supply V
SS
Before the low level scanning voltage imposes on during sweep trace Sk-1, transistor M3 and M4 conducting.When transistor M3 conducting, transistor M1 becomes the diode connection status.Therefore, the grid of transistor M1 and the voltage difference between the source electrode change, and become the threshold voltage vt h of transistor M1 up to this voltage difference.At this moment, because the source electrode of transistor M1 is connected to power supply V
DD, supply voltage V
DDImpose on the grid of transistor M1 with the summation of threshold voltage vt h, that is, and near the node A place of capacitor Cvth or its.And, when transistor M4 conducting and supply voltage VDD impose on Node B, the voltage V that capacitor Cvth is filled
CvthCan calculate according to following equation 2.
[equation 2]
V
Cvth＝V
CvthA-V
CvthB＝(VDD+Vth)-VDD＝Vth
Here, V
CvthBe meant the voltage that capacitor Cvth is filled, V
CvthABe meant the voltage of the node A that imposes on capacitor Cvth, V
CvthBBe meant the voltage of the Node B that imposes on capacitor Cvth.
When the low level scanning voltage imposes on current scan line Sk, transistor M5 conducting, data voltage Vdata imposes on Node B.And, because charging is given capacitor Cvth corresponding to the voltage of the threshold voltage vt h of transistor M1, so apply the corresponding voltage of summation with data voltage Vdata and threshold voltage vt h for the grid of transistor M1.That is to say that the grid of transistor M1 and the voltage Vgs between the source electrode can calculate according to following equation 3.Here, high level signal imposes on launch-control line Ek (for example Ekr, Ekg and/or Ekb), and transistor M2 (for example M2r, M2g and/or M2b) is cut off with the blocking-up electric current.
[equation 3]
Vgs＝(Vdata+Vth)-VDD
Then, response from the low level signal of launch-control line Ek with transistor M2 conducting.Therefore, corresponding to the electric current I of the gate-source voltage Vgs of transistor M1
OLEDM2 imposes on organic EL by transistor, and emission organic EL OLED (for example OLEDr, OLEDg and/or OLEDb).This electric current I
OLEDCan calculate according to following equation 4.
[equation 4]
Here, I
OLEDExpression flows to the electric current of organic EL OLED, V
GSThe source electrode of expression transistor M1 and the voltage between the grid, Vth represents the threshold voltage of transistor M1, and Vdata represents data voltage, and β represents constant.
When the data voltage Vdata low level emissioning controling signal that to be red data-signal and emission control transistor M2r response come from launch-control line Ekr transmission and during conducting, electric current I
OLEDBeing transferred to red organic EL OLEDr and red-emitting takes place.
Equally, when data voltage Vdata is green data-signal and emission control transistor M2g response from the low level emissioning controling signal of launch-control line Ekg transmission and during conducting, electric current I
OLEDBeing transferred to green organic EL OLEDg and transmitting green light takes place.In addition, when data voltage Vdata is blue data-signal and emission control transistor M2b response from the low level emissioning controling signal of launch-control line Ekb transmission and during conducting, electric current I
OLEDBe transferred to blue organic EL OLEDb and the generation of emission blue light.Three kinds of emissioning controling signals that impose on three kinds of launch-control lines respectively have the low-level period that do not overlap each other in a field, its, therefore a pixel can show the red, green and blue look.
Then, in the OLED display of first example embodiment, describe arrangement in being provided with the pixel region of image element circuit in detail with reference to figure 4, Fig. 5 and Fig. 6 according to the present invention.Here, distribute Reference numeral for the element of current pixel Pk, and the element of pixel Pk-1 distribute identical Reference numeral before giving, except on Reference numeral, adding apostrophe (" ' ").Apostrophe (" ' ") be used for the element of current pixel with it the element of preceding pixel distinguish.
Fig. 4 is first example embodiment according to the present invention, wherein is provided with the arrangenent diagram of the pixel region of image element circuit shown in Figure 3.Fig. 5 is along the cross-sectional view of I-I ' among Fig. 4.Fig. 6 is along the cross-sectional view of II-II ' among Fig. 4.
At first, as Fig. 4, Fig. 5 and shown in Figure 6, on insulated substrate 1, form and cut off (cut off) layer 3.Cutting off layer 3 is made up of for example monox or materials similar.Polysilicon layer 21,22,23,24,25,26,27,28 and 29 is the semiconductor layers that form on the layer 3 cutting off.
Polysilicon layer 21 forms the semiconductor layer of the source region, drain region and the channel region that are included in transistor M5 among the current pixel Pk, and the shape of this polysilicon layer 21 is similar to letter " U ".Polysilicon layer 22 forms the semiconductor layer of the source region, drain region and the channel region that are included in transistor M2r among the current pixel Pk, and the shape of this polysilicon layer 22 is similar to shape
Polysilicon layer 23 forms the semiconductor layer of the source region, drain region and the channel region that are included in transistor M2g among the current pixel Pk, and this polysilicon layer 23 is set on column direction.Polysilicon layer 24 forms the semiconductor layer of the source region, drain region and the channel region that are included in transistor M2b among the current pixel Pk, and the shape of this polysilicon layer 24 is similar to shape
Connect polysilicon layer 22,23 and 24 to form the shape of letter ' m '.Polysilicon layer 22 is positioned at the left side of polysilicon layer 23, and polysilicon layer 24 is positioned at the right side of polysilicon layer 23.Polysilicon layer 22 usually and polysilicon layer 24 about polysilicon layer 23 symmetries.
Polysilicon layer 25 is positioned near pixel region centre or the centre, and is provided with on the direction of row, and the bottom of polysilicon layer 25 is connected to polysilicon layer 22,23 and 24.Polysilicon layer 26 is positioned at the left side of polysilicon layer 25, and polysilicon layer 27 is positioned at the right side of polysilicon layer 25.Polysilicon layer 26 usually and polysilicon layer 27 about polysilicon layer 25 symmetries.Polysilicon layer 26 is generally square, and forms second electrode (node A) of capacitor Cvth, and the polysilicon layer 27 that is generally rectangle forms first electrode of capacitor Cst.Polysilicon layer 28 is letter ' n ' shape, and an end of polysilicon layer 28 is connected to polysilicon layer 26, and the other end of polysilicon layer 28 is connected to polysilicon layer 25, and forms source, leakage and the channel region of transistor M3.Polysilicon layer 29 is letter ' n ' shape, and an end of polysilicon layer 29 is connected to polysilicon layer 28, and forms the channel region of transistor M1 and source region, channel region and the drain region of drain region and transistor M4.
Gate line 41 ' be arranged on the line direction, before it is corresponding pixel Pk-1 before sweep trace Sk-1, and insulation and with polysilicon layer 21 ' intersects, to form the grid of the transistor M5 of pixel Pk-1 before.In addition, gate line 41 ' insulation also intersects with polysilicon layer 28 and 29, with the transistor M3 that forms current pixel Pk and the grid of M4.
Electrode 63 is near data lines 61, and is substantially parallel with data line 61, and with the drain region of polysilicon layer 21 by contact hole 51b that runs through layer dielectric film 50 and gate insulating film 30 and the contact hole 53 that passes layer dielectric film 50, be connected to grid 46.Electrode 63 becomes Node B.
The electrode 65 that is essentially rectangle near grids 41 ', and with contact hole 56a and the contact hole 56b that run through layer dielectric film 50 grid 47 that be connected in polysilicon layer 29 transistor M4 of drain region by running through layer dielectric film 50 and gate insulating film 30.Electrode 65 becomes Node B.
The drain electrode that electrode 66r, 66g and 66b are connected to transistor M2r, M2g and M2b with pixel electrode 81r, 81g and the 81b of each radiated element respectively.In electrode 66r, 66g and 66b, each all is essentially rectangle, and their line direction is longer than their column direction.Here, data line 62 is arranged on the column direction, and grid 42 is arranged on the line direction to 44.Electrode 66r, 66g and 66b are connected respectively to polysilicon layer 22,23 and 24 by contact hole 57r, 57g and the 57b that runs through gate insulating film 30 and layer dielectric film 50, and are connected to the drain electrode of transistor M2r, M2g and M2b.
Smooth (flatting) film 70 is formed on electrode 63,64,65,66r, 66g and the 66b.Pixel electrode 81r, 81g and 81b are connected to electrode 66r, 66g and 66b by contact hole 71r, 71g and 71b respectively.In Fig. 5 and Fig. 6, formation comprises red, green and blue organic membrane 85r, the 85g of emission layer (EML), electron transfer layer (ETL) and hole transmission layer (HTL) and the multilayer of 85b on pixel electrode 81r, 81g and 81b.
Like this, forming the transistorized polysilicon layer 22,23 and 24 of emission control is connected to each other.Polysilicon layer 23 forms the emission control transistor M2g that is positioned at the middle organic EL of three organic ELs.Polysilicon layer 22 forms the emission control transistor M2r of the organic EL that is positioned at three organic EL left sides.Polysilicon layer 24 forms the emission control transistor M2b of the organic EL that is positioned at three organic EL right sides.Polysilicon layer 22 be arranged to usually with polysilicon layer 24 about polysilicon layer 23 symmetries.Therefore, comprise that the element of driving transistors M1 and n raceway groove emission control transistor M2r, M2g and M2b can be arranged on pixel region efficiently, the internal resistance of polysilicon layer simultaneously remains unchanged basically.
Below, will describe the arrangement of the second example embodiment pixel region with reference to figure 7 in detail according to the present invention.
The difference of second example embodiment of the present invention and first example embodiment is to be respectively applied for the length breadth ratio that each polysilicon layer 122,123 and 124 that forms emission control transistor M2r, M2g and M2b has substantial constant, so emission control transistor M2r, M2g and M2b have similar or substantially the same internal resistance.After this, with the different element of respective element of second example embodiment with first example embodiment of Fig. 4 of key diagram 7.
As shown in Figure 7, the length of polysilicon layer 122 is Lr, and width is Wr, and the length of polysilicon layer 123 is Lg, and width is Wg, and the length of polysilicon layer 124 is Lb, and width is Wb.
Usually, can be according to the internal resistance of following equation 5 calculating polysilicon layers.
[equation 5]
Here, R is the internal resistance of polysilicon layer, and L is the length of polysilicon layer, that is to say the total length in source region, channel region and drain region, W be polysilicon with the direction of the direction perpendicular of measuring length on width.In addition, R
SBe planar resistor, it is the resistance with polysilicon layer of unit width W and unit length L.As an example, planar resistor can have the value on 5 Ω/plane.
In this case, each polysilicon layer 122,123 and each internal resistance of 124 are decided by each Lr/Wr, Lg/Wg and Lb/Wb.Therefore, polysilicon layer 122,123 and 124 has the relation that provides as following equation 6, so each polysilicon layer 122,123 has similar or substantially the same value with 124 internal resistance R.
[equation 6]
Like this, having the substantially the same polysilicon layer of length breadth ratio 122,123 and 124 by use makes the characteristic of emission control transistor M2r, M2g and M2b to keep constant basically.
Like this, having the substantially the same polysilicon layer of length breadth ratio 122,123 and 124 by use, to make the characteristic of emission control transistor M2r, M2g and M2b to be arranged to substantially the same, therefore by emission control transistor M2r, M2g and M2b electric current transmitted I
OLEDCan keep constant basically.
According to example embodiment of the present invention, when a pixel region comprises three organic ELs, and each emission control transistor is when being connected between the source electrode of driving transistors and the corresponding organic EL, and forming the transistorized polysilicon layer of emission control can connect as one.And, in the time of in the middle of the transistorized polysilicon layer of emission control of the organic EL in the middle of formation is positioned at three organic ELs is positioned at, the polysilicon layer that is positioned at three organic ELs left sides usually with the polysilicon layer that is positioned at three organic EL right sides about the polysilicon layer symmetry in the middle of being positioned at.In addition, having the substantially the same polysilicon layer of length breadth ratio by use makes the emission control transistor can have substantially the same characteristic.
Like this, each element is set in the small pixel district more effectively, and the internal resistance of the transistorized polysilicon layer of formation emission control remains unchanged basically.In addition, the emission control transistor has substantially the same current transmission characteristic, and therefore the electric current from driving transistors output can stably be transferred to corresponding radiated element basically.
Although the present invention has been described in conjunction with specific example embodiment, but those skilled in the art are to be understood that the present invention and are not limited to disclosed embodiment, on the contrary, the present invention is included in additional claim main idea and various modifications in the scope and equivalence setting with covering.
Claims (17)
1, a kind of display device comprises being used to transmit many sweep traces selecting signal, being used for many data lines of transmission of data signals and being connected to a plurality of image element circuits of this sweep trace and data line, wherein
At least one image element circuit comprises:
Capacitor is used to charge and the corresponding voltage of data-signal that comes from corresponding data lines transmission;
Driving transistors is used for exporting the electric current of the voltage that fills corresponding to capacitor;
A plurality of radiated elements are used for the galvanoluminescence corresponding to driving transistors output; With
Be connected a plurality of emission control transistors between this driving transistors and this a plurality of radiated elements,
Wherein the emission control transistor comprises a plurality of semiconductor layers with substantially the same each other internal resistance.
2, the display device of claim 1, wherein the length breadth ratio of the length breadth ratio of each semiconductor layer and another semiconductor layer is substantially the same.
3, the display device of claim 2, the electric current of two the radiated element response driving transistorss output in wherein a plurality of radiated elements, a kind of light in red-emitting, green glow and the blue light respectively.
4, the display device of claim 3, the length that wherein forms corresponding transistorized each semiconductor layer of emission control comprises the corresponding transistorized source region of emission control length, channel region length and a drain region length.
5, the display device of claim 4, wherein with the vertical substantially direction of the direction of measuring semiconductor layer length on measure the width that forms corresponding transistorized each semiconductor layer of emission control.
6, the display device of claim 2, at least two semiconductor layers in wherein a plurality of semiconductor layers are substantially parallel to each other.
7, a kind of display device comprises being used to transmit many sweep traces selecting signal, being used for many data lines of transmission of data signals and being connected to a plurality of image element circuits of this sweep trace and data line, wherein
At least one image element circuit that is arranged in the pixel region comprises:
First, second and the 3rd radiated element, they all comprise the pixel electrode that is applied in electric current, are used for corresponding to the galvanoluminescence that is applied; With
First, second and the 3rd semiconductor layer, they are connected to the pixel electrode of first, second and the 3rd radiated element respectively by first, second and the 3rd contact hole; With
First, second and the 3rd control electrode line, they are insulated and intersect with first, second and the 3rd semiconductor layer, and substantially parallel each other,
Wherein the length breadth ratio of first semiconductor layer, second semiconductor layer and the 3rd semiconductor layer is substantially the same each other.
8, the display device of claim 7, wherein this first semiconductor layer forms the first emission control transistor with the insulated trenches district that intersects with the first control electrode line;
This second semiconductor layer forms the second emission control transistor with the insulated trenches district that intersects with the second control electrode line; With
The 3rd semiconductor layer forms the 3rd emission control transistor with the insulated trenches district that intersects with the 3rd control electrode line.
9, the display device of claim 8, wherein each first, second and the length of the 3rd semiconductor layer comprise source region length, channel region length and the drain region length of one of corresponding first, second and the 3rd emission control transistor.
10, the display device of claim 9, the wherein width of measurement each first, second and the 3rd semiconductor layer on the direction vertical substantially with measuring corresponding first, second and the direction of one of the 3rd semiconductor layer length.
11, a kind of display device comprises being used to transmit many sweep traces selecting signal, being used for many data lines of transmission of data signals and being connected to a plurality of image element circuits of this sweep trace and data line, wherein
At least one image element circuit comprises:
First capacitor is used to charge and the corresponding voltage of data-signal that comes from corresponding data lines transmission;
The first transistor is used for exporting the corresponding electric current of voltage that is filled with first capacitor;
First, second and the 3rd radiated element are used for the galvanoluminescence corresponding to the first transistor output; And
First, second and the 3rd emission control transistor, they are connected between the first transistor and first, second and the 3rd radiated element,
Wherein forming transistorized first semiconductor layer of first emission control is provided with about forming transistorized the 3rd semiconductor layer of the 3rd emission control symmetrically with transistorized second semiconductor layer of formation second emission control usually.
12, the display device of claim 11, wherein first, second is substantially parallel each other with the two-layer at least semiconductor layer in the 3rd semiconductor layer.
13, the display device of claim 12 wherein forms the impurity of first, second and the 3rd semiconductor layer doped same type of first, second and the 3rd radiated element.
14, the display device of claim 11, wherein at least one image element circuit also comprises:
Transistor seconds, it is connected between the control electrode and the node between the first transistor and the first, second and third emission control transistor of the first transistor;
The 3rd transistor, it has first electrode that is connected to first capacitor, first electrode and second electrode that is connected to first capacitor, second electrode; With
Second capacitor, it has first electrode that is connected to the 3rd transistor second electrode and second electrode that is connected to the first transistor control electrode.
15, a kind of display device comprises being used to transmit many sweep traces selecting signal, being used for many data lines of transmission of data signals and being connected to this sweep trace and data line and be arranged to a plurality of image element circuits of matrix form, wherein
At least one image element circuit that is arranged in the pixel region comprises:
First, second and the 3rd radiated element, they comprise the pixel electrode that is applied in electric current, are used for corresponding to the galvanoluminescence that is applied;
Semiconductor layer, it comprises by first contact hole and is connected to first semiconductor layer regions of the pixel electrode of first emitting element, is connected to second semiconductor layer regions of pixel electrode of second radiated element and the 3rd semiconductor layer regions that is connected to the pixel electrode of the 3rd radiated element by the 3rd contact hole by second contact hole; And
First, second and the 3rd control electrode line, they are insulated, and intersect with semiconductor layer and substantially parallel each other,
Wherein this first semiconductor layer regions is provided with about second semiconductor layer regions symmetrically with the 3rd semiconductor layer regions usually.
16, the display device of claim 15, wherein at least one semiconductor layer regions in first, second and the 3rd semiconductor layer regions is arranged essentially parallel at least one data lines.
17, the display device of claim 16, wherein at least one semiconductor layer regions in first, second and the 3rd semiconductor layer regions is arranged essentially parallel at least one sweep trace.
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| KR1020040029944A KR100658615B1 (en) | 2004-04-29 | 2004-04-29 | Light emitting display panel and light emitting display |
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| CN104217671A (en) * | 2013-06-03 | 2014-12-17 | 三星显示有限公司 | Organic light emitting display panel |
| CN104932222A (en) * | 2014-03-20 | 2015-09-23 | 柯尼卡美能达株式会社 | Optical print head and image forming apparatus |
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| KR101970783B1 (en) | 2012-05-07 | 2019-04-23 | 삼성디스플레이 주식회사 | Semiconductor Device |
| KR102126535B1 (en) * | 2013-11-01 | 2020-06-24 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device |
| CN108288439B (en) * | 2017-01-10 | 2020-06-30 | 陈扬证 | Display device |
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| US5748160A (en) * | 1995-08-21 | 1998-05-05 | Mororola, Inc. | Active driven LED matrices |
| US6297070B1 (en) * | 1996-12-20 | 2001-10-02 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
| US6618031B1 (en) * | 1999-02-26 | 2003-09-09 | Three-Five Systems, Inc. | Method and apparatus for independent control of brightness and color balance in display and illumination systems |
| US6421033B1 (en) * | 1999-09-30 | 2002-07-16 | Innovative Technology Licensing, Llc | Current-driven emissive display addressing and fabrication scheme |
| US6950134B2 (en) * | 2000-02-22 | 2005-09-27 | Innotech Corporation | Method of preventing transfer and storage of non-optically generated charges in solid state imaging device |
| JP2001343936A (en) * | 2000-03-31 | 2001-12-14 | Ricoh Co Ltd | Display device, image forming device, recording medium, program and light emitting doide driving method |
| JP4822590B2 (en) | 2001-02-08 | 2011-11-24 | 三洋電機株式会社 | Organic EL circuit |
| JP2002318395A (en) | 2001-04-23 | 2002-10-31 | Canon Inc | Display device |
| JP2004109991A (en) | 2002-08-30 | 2004-04-08 | Sanyo Electric Co Ltd | Display driving circuit |
| JP3949040B2 (en) | 2002-09-25 | 2007-07-25 | 東北パイオニア株式会社 | Driving device for light emitting display panel |
| JP3832415B2 (en) * | 2002-10-11 | 2006-10-11 | ソニー株式会社 | Active matrix display device |
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2004
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| CN104217671A (en) * | 2013-06-03 | 2014-12-17 | 三星显示有限公司 | Organic light emitting display panel |
| CN104932222A (en) * | 2014-03-20 | 2015-09-23 | 柯尼卡美能达株式会社 | Optical print head and image forming apparatus |
| CN104932222B (en) * | 2014-03-20 | 2017-08-11 | 柯尼卡美能达株式会社 | Optical writing device and image processing system |
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| CN101221978A (en) | 2008-07-16 |
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| KR20050104603A (en) | 2005-11-03 |
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