CN1692636A - Solid-state image sensing device and camera using the solid-state image sensing device - Google Patents

Abstract

The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias. The solid-state image sensing device includes vertical transfer parts 3 in which signal charges read out from photoelectric conversion parts 2 arranged bidimensionally are transferred in the vertical direction stage by stage, a horizontal transfer part 4 in which signal charges received from the vertical transfer parts 3 are transferred in the horizontal direction, and a control unit that controls transfer operations of the vertical transfer parts 3 and horizontal transfer part 4, wherein vertical last stages of the vertical transfer parts 3 have transfer electrodes formed to have identical configurations repeated every 2n+1 (n denotes an integer of 1 or higher) columns, and vertical last stages of columns other than one column among the 2n+1 columns or all vertical stages are provided with transfer electrodes that are independent of those of the other vertical last stages.

Description

Solid-state image sensing device and camera using the solid-state image sensing device

technical field

The present invention relates to a solid-state image sensing device that converts received light into electrical signals and then outputs them as image signals.

Background technique

Conventionally, a solid-state image sensing device that converts received light into electrical signals and then outputs them as image signals, and a camera such as a still digital camera capable of displaying an image signal obtained from the solid-state image sensing device as still image. Recently, for cameras having such solid-state image sensing devices, image quality and functions are required to be improved, and the density of pixels is also increased more and more.

In order to increase the speed of image signal output in such solid-state image sensing devices, a driving method has been proposed in which the number of pixels from which signal charges are to be read out is reduced. The number of pixels included in the output image signal is thereby reduced. For example, JP11(1999)-234688A discloses a driving method in which, for example, three pixels arranged in the horizontal direction form one block, and in a solid-state image sensing device, two pixels other than a pixel located in the middle of each block Signal charges (two pixels arranged on the right and left sides) are mixed together, while signal charges of a pixel positioned in the middle of each block and signal charges of a pixel in the middle of a block adjacent thereto are mixed together. The number of pixels arranged in the horizontal direction included in an image signal to be output from the solid-state image sensing device is thereby reduced.

However, in the process of reducing the number of pixels arranged in the horizontal direction to 1/3, a component as an aliasing error is added to the DC component of the signal that is different from the sampling frequency used when all the pixels output signal charges. 1/3 corresponds. In the solid-state image sensing device employing the above conventional driving method, the component corresponding to 1/3 of the sampling frequency is not zero (see FIG. 27 ). This causes moire or aliasing, and thus deteriorates the quality of an image formed from an output image signal, which has been a problem.

Contents of the invention

In order to solve this problem, the present invention is to provide a solid-state image sensing device capable of reducing at least the number of pixels arranged in the horizontal direction and capable of outputting high-quality image signals at high speed without moire or aliasing.

In order to achieve the above objects, a solid-state image sensing device according to the present invention includes: a vertical transfer section provided corresponding to each column of two-dimensionally arranged pixels for vertically transferring signal charges read out from the pixels; and a horizontal transfer section, Used to horizontally transfer signal charges received from the vertical transfer section. The transfer stage closest to the horizontal transfer part in the vertical transfer part is the vertical final stage. The vertical final stage has transfer electrodes formed to repeat the same structure every m (m represents an integer of 2 or more) columns. The vertical final stages of columns other than one of the m columns or all vertical final stages of the m columns are each provided with a transmission electrode, which is independent of the transmission electrodes of the other vertical final stages in the m columns and thus independent of all vertical final stages. The other vertical stages described above control the operation of transferring signal charges from the associated vertical stage to the horizontal transfer section.

This enables at least a reduction in the number of pixels arranged in the horizontal direction, and thus a solid-state image sensing device capable of outputting high-quality image signals at high speed without moiré or aliasing can be provided.

Brief description of the drawings

1 is a plan view showing the structure of a solid-state image sensing device according to one embodiment of the present invention;

2 is an explanatory diagram showing a combination of pixels to be mixed in a solid-state image sensing device according to an embodiment of the present invention;

3 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

4 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

5 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

6 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

7 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

8 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

9 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

10 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

11 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

12 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

13 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

Each of FIGS. 14A to 14C is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

15 is an explanatory diagram showing an example of a combination (pixel mixing group) of pixels to be mixed together in a solid-state image sensing device according to an embodiment of the present invention;

16 is an explanatory diagram showing an example of a combination (pixel mixing group) of pixels to be mixed together in a solid-state image sensing device according to an embodiment of the present invention;

17 is an explanatory diagram showing an example of a combination (pixel mixing group) of pixels to be mixed together in a solid-state image sensing device according to an embodiment of the present invention;

18 is an explanatory diagram showing an example of an electrode structure in a solid-state image sensing device according to an embodiment of the present invention;

19 is an explanatory diagram showing an example of an electrode structure in a solid-state image sensing device according to an embodiment of the present invention;

20 is an explanatory diagram showing an example of an electrode structure in a solid-state image sensing device according to an embodiment of the present invention;

21 is an explanatory diagram showing an example of an electrode structure in a solid-state image sensing device according to an embodiment of the present invention;

22 is a plan view showing an example of a specific arrangement of gate electrodes in a solid-state image sensing device according to an embodiment of the present invention;

23 is an explanatory diagram showing a timing chart representing the timing of control signals in the solid-state image sensing device according to an embodiment of the present invention and the state of charges transferred according to the timing chart;

24 is an explanatory diagram showing a signal charge state in a solid-state image sensing device according to an embodiment of the present invention;

25 is an explanatory diagram showing an example of an electrode structure in a solid-state image sensing device according to an embodiment of the present invention;

26 is an explanatory diagram showing a timing chart representing the timing of control signals in the solid-state image sensing device according to an embodiment of the present invention and the state of charges transferred according to the timing chart;

27 is a graph showing the spatial frequency response of a solid-state image sensing device according to one embodiment of the present invention;

28 is a block diagram showing a schematic structure of a camera according to an embodiment of the present invention;

29 is a plan view showing another example of a specific arrangement of gate electrodes in a solid-state image sensing device according to an embodiment of the present invention;

30 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

31 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

32 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

33 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

34 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

35 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

36 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

37 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

38 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

39 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

40 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

41 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

42 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

43 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

44 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

45 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

46 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

47 is an explanatory diagram showing one step of the pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

48 is an explanatory diagram showing an example of a color filter used in a solid-state image sensing device according to an embodiment of the present invention;

49 is an explanatory diagram showing one step of a pixel mixing operation performed by a solid-state image sensing device according to an embodiment of the present invention;

50 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

51 is an explanatory diagram showing one step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

52 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

53 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

54 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

55 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

56 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

57 is an explanatory diagram showing a step of the pixel mixing operation performed by the solid-state image sensing device according to an embodiment of the present invention;

FIG. 58 is an explanatory diagram showing the center-of-gravity positions of pixels mixed by repeating the steps shown in FIGS. 49 to 57 .

BEST MODE FOR CARRYING OUT THE INVENTION

The structure of the solid-state image sensing device of the present invention includes: a vertical transfer section provided corresponding to each column of two-dimensionally arranged pixels for vertically transferring signal charges read out from the pixels, and a horizontal transfer section for horizontally transferring The signal charge received from the vertical transfer part, wherein the vertical transfer part includes a transfer stage, and the transfer stage positioned closest to the horizontal transfer part is a vertical final stage, the vertical final stage has a transfer electrode, and the transfer electrode is formed every m (m represents 2 or a larger integer) column is repeated once, and each of the vertical final stages of the columns other than one of the m columns or all the vertical final stages of the m columns is provided with a transmission electrode, the transmission electrode The operation of transferring signal charges from the relevant vertical final stage to the horizontal transfer section is controlled independently of the transfer electrodes of the other vertical final stages in the m columns (Structure 1).

The vertical transfer section provided in the solid-state image sensing device of the present invention may be formed by a vertical CCD including a photoelectric conversion section, for example, a photodiode provided corresponding to two-dimensionally arranged pixels, and a plurality of vertical transfer stages; Or formed by a vertical CCD having a light receiving function and including a plurality of vertical transfer stages.

According to the above structure 1, by repeating the transfer operation m times, all the signal charges of the vertical final stages are transferred to the horizontal transfer section. When the transfer from the vertical final stage to the horizontal transfer section is combined with the transfer in the horizontal direction performed by the horizontal transfer section, it is possible to arbitrarily reposition or mix pixel outputs. The transfer operations of the vertical transfer part and the horizontal transfer part are controlled by applying predetermined control signals to transfer electrodes respectively provided for the vertical transfer part and the horizontal transfer part. The means (control unit) for transmitting the control signal may be located outside the solid-state image sensing device, or integrated with the solid-state image sensing device.

In the solid-state image sensing device according to the present invention, the above integer m may be 2n+1 (n represents an integer of 1 or more) (Structure 2). Further, in the solid-state image sensing device, preferably, signal charges of pixels included in each of first and second pixel mixing groups each of which is composed of 2n+1 (n represents an integer of 1 or greater) pixels arranged every other pixel in the horizontal direction, and each second pixel mixed group is arranged every other pixel and is 2n except for the first pixel mixed group +1 pixel structure, and the center of gravity of each pixel of each second pixel mixing group is located at the same distance from the center of gravity of two adjacent pixels of the first pixel mixing group (structure 3).

This structure allows the number of pixels arranged in the horizontal direction to be reduced to 1/(2n+1) without wasting signal charges of the pixels. In addition, since the mixed pixels are spaced at the same interval after the number of pixels is reduced, an image signal with high sensitivity, high resolution and less moiré can be obtained.

In this solid-state image sensing device, it is further preferable that, for each of the first and second pixel mixing groups present in the vertical final stage, (a1) only The signal charge is transferred from the vertical final stage to the horizontal transfer part, said each pixel mixing group is composed of 2n+1 pixels, (a2) the signal charge present in the horizontal transfer part is transferred forward by a distance corresponding to two pixels, ( a3) Only the signal charges of the pixels having residual signal charge in the vertical final stage and the furthest from the output terminal of the horizontal transfer part of the pixel group are transferred from the vertical final stage to the horizontal transfer part, said each pixel group consisting of 2n+1 Pixel composition, and (a4) transfer operations (a2) and (a3) are repeated until signal charges of all pixel groups consisting of 2n+1 pixels are transferred from the vertical final stage to the horizontal transfer section (Structure 4).

Through the above operations, 2n+1 pixels arranged every other pixel can be mixed together, and further 2n+1 pixels arranged between them can also be mixed together.

In this solid-state image sensing device, it is further preferable that (b1) as the last operation of the transfer operations a1 to a4, after or simultaneously with the transfer of the signal charge of the last pixel included in each pixel group from the vertical final stage to the horizontal transfer section, all The signal charges present in the vertical transfer section of the column are transferred to the respective next stages, said each pixel group consisting of 2n+1 pixels, (b2) For the signal charges transferred to the vertical final stage by the above operation b1, performing Transfer operations a1 to a4, and (b3) transfer operations b1 and b2 are repeated until signal charges included in 2n+1 stages are transferred to the horizontal transfer section (structure 5).

Through the above operations, since there is no blank transfer area in the horizontal transfer section, the number of pixels arranged horizontally can be reduced to 1/(2n+1) without increasing the horizontal transfer speed.

In the above-mentioned solid-state image sensing device, preferably, the vertical final stage of the vertical transfer section positioned closest to the horizontal transfer section has a transfer electrode formed to have the same structure repeated every three columns, and, from the horizontal transfer section Counting from the output terminals of the three columns, each of the vertical final stages of at least the second and third columns of the three columns is provided with a transmission electrode that is independent of the transmission electrodes of other vertical final stages and thus independent of other vertical The final stage controls the operation of transferring signal charges from the associated respective vertical final stages to the horizontal transfer section (Structure 6). This enables three pixels arranged in the horizontal direction to be mixed together, whereby the number of pixels arranged horizontally can be reduced to 1/3.

In the solid-state image sensing device according to the above structure 6, it is preferable that the vertical final stages of the first column counted from the output end of the horizontal transfer section have the electrode structure of the stages other than the vertical final stages of the first column. Same electrode structure (Structure 7).

In the solid-state image sensing device according to Structure 6, preferably, each first pixel mixing group consists of three pixels arranged every other pixel in the horizontal direction, and each second pixel mixing group consists of pixels other than the first pixel mixing group The pixel center of gravity of each second pixel mixing group is located at the same distance from the center of gravity of the adjacent pixels of the two first pixel mixing groups (structure 8). This structure enables the number of pixels arranged in the horizontal direction to be reduced to 1/3 without wasting the signal charge of the pixels, and allows mixed pixels to be spaced at the same interval after the number of pixels is reduced.

In the solid-state image sensing device according to Structure 6, preferably, (c1) only the signal charge of the vertical final stage of the second column counted from the output end of the horizontal transfer section among the above-mentioned three columns is transferred to the horizontal transfer section, ( c2) The signal charges present in the horizontal transfer section are transferred forward by a distance corresponding to two pixels, (c3) only the signal charges of the vertical final stage of the third column counted from the output terminal of the horizontal transfer section among the above three columns is transferred to the horizontal transfer section, (c4) the signal charge present in the horizontal transfer section is transferred forward by a distance corresponding to two pixels, and (c5) the first of the above three columns counted from the output terminal of the horizontal transfer section The signal charge of the vertical final stage of the column is transferred to the horizontal transfer part (structure 9). Through the above operation, three pixels arranged every other pixel can be mixed together, and three pixels arranged between them can also be mixed together. Also, mixed pixels can be spaced at the same interval after the number of pixels is reduced.

In the solid-state image sensing device according to Structure 9, preferably, (d1) after or simultaneously with the signal charge of the vertical final stage of the first column being transferred to the horizontal transfer section by the transfer operation c5, the vertical transfer sections of all columns exist in The signal charge is transferred to the respective next stage, (d2) For the signal charge transferred to the vertical final stage at the end of the above operation d1, the transfer operations c1 to c5 are performed, and the signal of the vertical final stage of the first column is transferred by operation c5 After or simultaneously with the transfer of the charges to the horizontal transfer parts, the signal charges present in the vertical transfer parts of all columns are transferred to the respective next stages, and (d3) transfer is performed on the signal charges transferred to the vertical final stages at the end of the operation d2 Operate cl to c5 (structure 10). Since there is no blank transfer stage in the horizontal transfer section even when three pixels arranged in the horizontal direction are mixed together, the above operation enables the number of pixels arranged horizontally to be reduced to 1/3 without increasing the horizontal transfer speed.

In the solid-state image sensing device according to Structure 3, preferably, one pixel mixing group is composed of (2n+1)×(2n+1) pixels in the first or second pixel mixing group, and the first and second pixel mixing groups The groups each include 2n+1 pixels present in 2n+1 rows arranged every other row in the vertical direction, and signal charges of pixels arranged in 2n+1 rows of each column are superimposed together in the respective vertical transfer sections (Structure 11). According to this structure, the amount of data for one screen is 1/((2n+1)×(2n+1)), so the number of frames per unit time can be increased. Additionally, sensitivity is improved since no pixels are wasted.

In the solid-state image sensing device according to Structure 11, preferably, one pixel mixing group is composed of nine pixels in three rows arranged every other row in the vertical direction, and each of the three rows includes every other pixel in the horizontal direction. Pixel arrangement of three pixels (structure 12). Since the amount of data of one screen is reduced to 1/9, it is possible to increase the number of frames per unit time. Additionally, sensitivity is improved since no pixels are wasted.

In the solid-state image sensing device according to Structure 3, preferably, one pixel mixing group is composed of 6 pixels arranged in two rows, and there are three rows between the above two rows in the vertical direction, and each of the two rows is included in Three pixels arranged every other pixel in the horizontal direction (structure 13). This provides an advantage that the linear signal range is widened compared to the case where the mixed pixels are positioned in three rows arranged in the vertical direction.

In the solid-state image sensing device according to Structure 3, preferably, one pixel mixing group is composed of three pixels arranged every other pixel in the horizontal direction in every second row in the vertical direction (Structure 14 ). This provides an advantage that the linear signal range is further widened compared to the case where the mixed pixels are positioned in three rows arranged in the vertical direction.

In the solid-state image sensing device according to Structure 2, preferably, the pixels arranged two-dimensionally have color filters arranged such that 4 pixels of (2 pixels arranged in the horizontal direction)×(2 pixels arranged in the vertical direction) The pixels form a unit (structure 15). With such a structure, even after mixing pixels, an image can be obtained without changing the arrangement of the arranged color filters, so 4 pixels of (2 pixels arranged horizontally)×(2 pixels arranged vertically) pixels form a unit.

In the solid-state image sensing device according to Structure 15, preferably, the color filters are arranged such that the first color filter is provided to 2 pixels located on a diagonal line among the 4 pixels, and the second and third color filters The light sheets are provided to the other 2 pixels respectively (structure 16).

In the solid-state image sensing device according to Structure 3, preferably, the two-dimensionally arranged pixels have color filters arranged such that 8 pixels of (2 pixels arranged in the horizontal direction)×(4 pixels arranged in the vertical direction) The pixels form one unit, and 2 pixels adjacent to each other in the vertical direction are mixed together in the vertical transfer section (structure 17).

In the solid-state image sensing device according to the present invention, preferably, at least two independent electrodes are provided for each vertical final stage.

For example, when 6 transmission electrodes are formed in the vertical final stage of each column, preferably, any one of the following structures is adopted: (1) among all the vertical transmission parts of three columns adjacent to each other, the 6 transmission electrodes Among them, the second and fourth transfer electrodes counting from one end of the horizontal transfer part are independent electrodes, which are independent of the transfer electrodes of the vertical final stage of other columns, and are located at the first, third, fifth and sixth The transmission electrodes are electrodes shared with other stages of the respective vertical transmission parts (structure 18); (2) in the vertical transmission parts of two columns among the three columns adjacent to each other, among the six transmission electrodes, from the horizontal transmission The second and fourth transmission electrodes starting from the component end are independent electrodes, which are independent of the vertical end-level transmission electrodes of other columns, and the first, third, fifth and sixth transmission electrodes are connected to their respective The electrodes shared by other stages of the vertical transmission element, and among the vertical transmission elements of the remaining one column of the three columns adjacent to each other, all the six transmission electrodes located at the first to the sixth are connected to the relevant vertical transmission element (structure 19); (3) among all the vertical transmission elements in three columns adjacent to each other, among the 6 transmission electrodes, the ones counting from the end of the horizontal transmission elements are located at the second and fourth and the sixth transfer electrodes are independent electrodes, which are independent from the transfer electrodes of the vertical end stages of other columns, and the transfer electrodes located in the first, third and fifth are electrodes shared with other stages of the respective vertical transfer components (structure 20 ); (4) Among the vertical transmission elements in two columns of the three columns adjacent to each other, among the six transmission electrodes, the second, fourth and sixth transmission electrodes counted from the end of the horizontal transmission element They are independent electrodes, which are independent of the transmission electrodes of the vertical end stages of other columns. The transmission electrodes located in the first, third and fifth are electrodes shared with other levels of the respective vertical transmission components, and in the three columns adjacent to each other In the vertical transmission parts of the remaining column, all 6 transmission electrodes located in the first to sixth are electrodes shared with other levels of the relevant vertical transmission parts (structure 21); (5) in three adjacent columns at least Among the vertical transmission parts of the two columns, among the six transmission electrodes, the second and fourth transmission electrodes counted from the end of the horizontal transmission part are independent electrodes, which are independent of the vertical end-stage transmission electrodes of other columns, And among all three columns of vertical transfer elements adjacent to each other, the transfer electrodes positioned first and third from the end of the horizontal transfer elements are different from electrodes provided in other stages of the respective vertical transfer elements (structure 22 ); and (6) among the vertical transmission elements in at least two of the three columns adjacent to each other, among the six transmission electrodes, the second, fourth, and sixth transmission electrodes counted from the end of the horizontal transmission element The electrodes are independent electrodes, which are independent from the transfer electrodes of the vertical final stages of other columns, and are located in the first, third and third columns counted from the end of the horizontal transfer part among all the vertical transfer parts of the three columns adjacent to each other. The transmission electrodes of five are different from the electrodes provided in other stages of the respective vertical transmission elements (structure 23).

Furthermore, in the solid-state image sensing device according to Structure 1 of the present invention, it is also preferable that each stage of the vertical transfer section is formed with 6 transfer electrodes; Among them, the second, fourth, and sixth transfer electrodes counted from the end of the horizontal transfer member are each formed of an electrode film of the first layer as electrodes common to all columns, and are located at The first, third, and fifth transfer electrodes are each formed of an electrode film of a second layer, which is an upper layer formed on the first layer, as an electrode common to all the columns; and in the respective In the vertical final stage, as independent electrodes, the second and fourth electrodes counted from the end of the horizontal transmission part are each formed of the same electrode film as that of the second layer, and the film is divided into sections corresponding to the respective columns. Distributed independent components (structure 24). This structure provides the advantage that the electrode film of the upper layer is formed in an island form to facilitate wiring.

Alternatively, in the solid-state image sensing device according to the structure 1 of the present invention, it may also be preferable that the vertical transfer part has at least three layers of electrode films, and the transfer electrodes provided independently from the transfer electrodes of the vertical final stage in other columns are composed of at least one layer including the top layer. An electrode film is formed (structure 25). This provides the advantage that such use of the top layer to form the separate transfer electrode makes wiring unnecessary later.

It is also preferable that the solid-state image sensing device according to the structure 1 of the present invention has a structure in which (e1) signals of pixels whose number is between 1 and (m-1) selected from m pixels arranged in the horizontal direction The charge is transferred to the horizontal transfer section, (e2) the signal charge present in the horizontal transfer section is transferred forward or backward by at least a distance corresponding to one pixel, and (e3) the transfer operations e1 and e2 are repeated, thereby transferring the m pixels All signal charges are transferred to the horizontal transfer section (structure 26).

Furthermore, it is further preferable that the solid-state image sensing device according to the above-mentioned structure 26 has a structure in which (e4) after the operation e3, the signal charges of all the columns are transferred to the horizontal transfer section by one stage, and (e5) the transfer operation through the above-mentioned e4 The signal charges transferred to the vertical final stage are subjected to the above transfer operations e1 to e3, and then the transfer operations e4 and e5 are repeated, thereby transferring all the signal charges contained in the m stages to the horizontal transfer section (structure 27).

In the solid-state image sensing device according to Structure 1, preferably, the operation mode can be selectively switched between at least two modes, including, a mode in which m pixels arranged in the horizontal direction are mixed by driving the transfer electrodes to independently The transfer electrodes are provided in m columns or other columns in the vertical final stages of columns except one of all the columns, and a mode in which pixel mixing is not performed by driving the transfer electrodes in the same manner as the other columns (structure 28). This structure is preferable because it allows switching between a mode of outputting an image map with high resolution without mixing pixels and a mode of outputting an image map with high sensitivity and high frame rate by mixing pixels.

It may also be preferable that the solid-state image sensing device according to the present invention has a structure in which the integer m represents a common multiple of m1 (m1 represents an integer of 2 or greater) and m2 (m2 represents an integer of 2 or greater), and Its operation mode can be selectively switched between at least two modes including a mode of mixing m1 pixels arranged horizontally and a mode of mixing m2 pixels arranged horizontally (structure 29).

In addition, in the above structure 29, the solid-state image sensing device may further be provided with color filters of three colors arranged in a repeated pattern, wherein in the color filters, two colors of the three colors are colored The filters are arranged in a vertical direction and color filters of two of the three colors are arranged in a horizontal direction, wherein it is possible to selectively switch between at least two modes including a mixed horizontal arrangement of m1 A pattern of pixels and a pattern of mixing m2 pixels arranged horizontally, wherein the m1 pixel and the m2 pixel are each provided with a filter of one of three colors having a color filter (structure 30 ).

Alternatively, in the above structure 29, the solid-state image sensing device may further be provided with color filters of three colors arranged in a repeated pattern, wherein among the color filters, color filters of two colors out of the three colors The chips are arranged in a vertical direction, and the color filters of two colors out of three colors are arranged in a horizontal direction, wherein it is possible to selectively switch between at least two modes selected from the group consisting of 2 mixed horizontally arranged A mode of 3 pixels, a mode of mixing 3 pixels arranged horizontally, and a mode of mixing 4 pixels arranged horizontally, while the 2, 3, and 4 pixels are each provided with one of three colors with a color filter filter (structure 31).

Alternatively, in any of the above structures 29 to 31, a mode in which pixels are not mixed may also be included as an operation mode (structure 32). This structure allows switching between a mode of outputting an image map with high resolution without mixing pixels and a mode of outputting an image map with high sensitivity and a high frame rate by mixing pixels.

In the above-mentioned structure 26, m pixels can be continuously arranged in the horizontal direction (structure 33). Alternatively, the combination of the above m pixels arranged in the horizontal direction may be changed step by step (structure 34). When the combination of pixels is changed step by step, it is preferable that, in at least two stages adjacent to each other, the centers of gravity of the combination of the above-mentioned m pixels are equally spaced in the horizontal direction (structure 35 ).

In addition, the camera of the present invention includes any one of the above-mentioned solid-state image sensing devices, and preferably, is a three-plate type color camera, especially in a solid-state image using a mixture of pixels arranged consecutively in the horizontal direction. case of the sensing device. Furthermore, in the case of a three-plate type color camera, preferably, when m=2, it is possible to selectively switch between at least two modes including a first mode of not mixing pixels and mixing vertically adjacent to each other A second pattern of two pixels and two pixels adjacent to each other in the horizontal direction.

Hereinafter, specific embodiments of the present invention are described with reference to the accompanying drawings.

first embodiment

FIG. 1 shows a schematic structure of a solid-state image sensing device according to the present embodiment. The solid-state image sensing device 1 of the present embodiment employs a system capable of simultaneously and independently reading out all pixels. The solid-state image sensing device 1 includes photoelectric conversion sections 2 corresponding to pixels, vertical transfer sections 3 , and horizontal transfer sections 4 arranged two-dimensionally. Each of the vertical transfer section 3 and the horizontal transfer section 4 is formed of a CCD. A photodiode is used as the photoelectric conversion part 2 . Each photoelectric conversion element 2 is provided with color filters of three colors, namely red (R), green (G) and blue (B). In this embodiment, each of the R, G, and B filters is periodically arranged every other pixel in the vertical and horizontal directions. For example, as shown in FIG. 1, when 4 pixels of (2 pixels arranged vertically)×(2 pixels arranged horizontally) form one unit, color filters are arranged so that the lower left pixel is set to R, The lower right and upper left pixels are G, and the upper right pixel is B. Control signals are transmitted from a control unit not shown in the drawings to the transfer electrodes of the vertical transfer section 3 and the horizontal transfer section 4 , thereby controlling the operation of the solid-state image sensing device 1 . The above-mentioned control unit is arranged outside the solid-state image sensing device 1 and connected to the solid-state image sensing device 1 through a signal line. Alternatively, the control unit may be combined with the solid-state image sensing device 1 to form one unit therewith.

In this embodiment, one transfer stage of the vertical transfer section 3 includes three rows of photoelectric conversion sections 2 arranged in the vertical direction. With such a structure, pixels arranged every other pixel in three rows are superposed together in the respective vertical transfer parts 3 . Furthermore, the advantage of increased capacity of the transport stage is also provided.

The following description mainly describes the mixing operation of pixels arranged in the horizontal direction in the solid-state image sensing device 1 .

Through the transfer operation of the vertical transfer section 3 and the horizontal transfer section 4 controlled by a control unit (not shown in the figure), the solid-state image sensing device 1 mixes signal charges of each of three pixels arranged every other pixel in the horizontal direction , thereby reducing the number of pixels arranged in the horizontal direction to 1/3. FIG. 2 shows a combination of pixels whose signal charges are to be mixed together. Hereinafter, a combination of pixels to be blended together is referred to as a "pixel blending group". The symbols shown in Fig. 2, such as Rxy, R, G or B indicate the color of the filter provided for the relevant pixel, and x indicates the vertical position of the relevant pixel (called first level, second level, ..., sequentially Counting from one end of the horizontal transfer section 4), and y indicates the position of the relevant pixel in the pixel mixing group (referred to as first, second, . . . , sequentially counted from the output end of the horizontal transfer section 4).

As shown in FIG. 2 , in the solid-state image sensing device 1 , for example, three green pixels such as G11 , G12 and G13 arranged every other pixel form a first pixel mixing group. Furthermore, the pixel blending group consisting of blue pixels is determined such that their centers of gravity are equally spaced with respect to the center of gravity of each of the blending pixels generated by the first pixel blending group. That is to say, each of the second pixel mixing groups is composed of three pixels, which are B11 located between G12 and G13 of the first pixel mixing group, and the above-mentioned pixels of the second pixel mixing group adjacent to the first pixel mixing group. The pixel B12 between G13 and G11, and the pixel B13 between G11 and G12 of the pixel mixing group adjacent to the second pixel mixing group. As described above, among pixels of two different colors arranged alternately in the horizontal direction, each of three pixels arranged every other pixel is combined to be mixed together, so that the center of gravity of each color pixel thus mixed equally spaced. Therefore, there is no ripple or confusion.

Next, referring to the state transition diagrams shown in FIGS. 3 to 13, a procedure for driving the solid-state image sensing device 1 for mixing the combined pixels shown in FIG. 2 will be described.

The vertical transfer section 3 of the solid-state image sensing device 1 is configured with three columns forming one unit. In FIGS. 3 to 13 , the signal charges of the horizontal transfer section 4 are output to one end corresponding to our left side, and each of the three columns forming a unit of the vertical transfer section 3 is called from the horizontal transfer section 4 in order. The first, second, and third columns counting from the output of the output terminal (in the figure, denoted as column 1, column 2, and column 3). Furthermore, the transfer stage of each vertical transfer section 3 closest to the horizontal transfer section 4 is referred to as "vertical final stage" hereinafter.

Among the vertical final stages configured with three columns of vertical transfer sections 3 forming one unit, the vertical final stages of the second and third columns are each configured such that they individually perform a transfer operation, and communicate with other transfer stages of the relevant column and other The vertical last level of the column is irrelevant. In other words, when signal charges are held in the vertical final stages of the first and third columns, only the signal charges of the vertical final stage of the second column can be transferred to the horizontal transfer section 4 . Furthermore, only the signal charge of the vertical final stage of the third column can be transferred to the horizontal transfer section 4 when signal charges are held in the vertical final stages of the first and second columns. A specific example of the electrode structure of the vertical transfer section 3 employed to realize such a transfer operation will be described below.

First, as shown in FIG. 3, in the vertical final stage configured with three columns forming one unit, only the vertical final stage of the second column is driven, thus as shown by the arrow in FIG. 3, only the vertical final stage of the second column is driven. The signal charges of the final stage are transferred to the horizontal transfer section 4′.

Next, as shown in FIG. 4, the signal charges present in the horizontal transfer section 4 are transferred forward by a distance corresponding to two pixels.

Next, as shown in FIG. 5, among the vertical final stages configured with three columns forming one cell, only the vertical final stage of the third column is driven, thereby transferring only the signal charge of the vertical final stage of the third column to the horizontal The transmission part 4 is shown by the arrow in FIG. 5 .

Through such a transfer operation, as shown in FIG. 6 , the signal charges of the two pixels G12 and G13 and B12 and B13 are mixed together in the horizontal transfer section 4 . Thereafter, as shown in FIG. 6, the signal charges present in the horizontal transfer section 4 are transferred forward by a distance corresponding to two pixels.

As shown in FIG. 7, all the vertical transfer parts are made to vertically transfer one-stage signal charges, and therefore, as shown in FIG. The horizontal transport part 4 is mixed together separately. In this way, three pixels arranged every other pixel contained in each of two different colors in the same level are combined to be mixed together. Therefore, the number of pixels arranged in the horizontal direction is reduced to 1/3. Furthermore, as can be understood from FIG. 8 , since the green mixed pixels and the blue mixed pixels are equally spaced, no moiré or aliasing occurs.

Starting from the state shown in FIG. 8, the same transfer operation shown in FIGS. 3 to 7 is repeated, and therefore, as shown in FIG. The signal charges of each of the three pixels are combined so as to be mixed together in the horizontal transfer section 4 .

In addition, starting from the state shown in FIG. 9, the same transfer operation shown in FIGS. 3 to 7 is repeated, and therefore, as shown in FIG. The signal charges of each of the three pixels are combined so as to be mixed together in the horizontal transfer section 4 . This completes the transfer of the signal charges of all the pixels included in the three stages indicated by the character "a" in FIG. 2 to the horizontal transfer section 4 .

Next, as shown in FIG. 11 , the signal charges present in the horizontal transfer section 4 are sequentially output. Accordingly, signal charges of three lines are output from the solid-state image sensing device 1 while the number of pixels arranged in the horizontal direction is reduced to 1/3.

Thereafter, by repeating the same transfer operation as described above, the signal charges of all the pixels arranged in the three stages indicated by the character "b" in FIG. 2 are transferred to the horizontal transfer section 4 in the state shown in FIG. 12, Then output sequentially from the horizontal transfer section 4 as shown in FIG. 13 .

As described above, the image signal output from the horizontal transfer section 4 of the solid-state image sensing device 1 is generated using pixels arranged one-dimensionally. Therefore, to restore the signals to their original two-dimensional arrangement, an image processor located outside the solid-state image sensing device 1 performs two-dimensionally repositioning processing on the signals output from the horizontal transfer section 4 .

For example, pixels included in each of three stages indicated by characters "a" and "b" in FIG. 2 are output from the horizontal transfer section 4 in the order shown in FIG. 14A. In FIG. 14A, sections marked with "Dummy" indicate pixels located in the peripheral section of the vertical CCD section 3, and indicate those sections in which signal charges of three pixels are not mixed together. In addition, a7 to a12, a13 to a18, b7 to b12, and b13 to b18 shown in FIGS. 14A and 14B are repetitions of a1 to a6 and b1 to b6 shown in FIGS. 11 and 13, respectively. However, their subscripts are changed to clearly show the positions they occupy after their two-dimensional arrangement. In addition, the colors of the mixed pixels arranged as shown in FIG. 14B are indicated by characters "R", "G" and "B" in FIG. 14C.

As can be understood from FIG. 14C , even if the number of pixels arranged in the horizontal direction is reduced to 1/3, the solid-state image sensing device 1 enables the arrangement of pixels to be maintained in the original state. Therefore, the speed at which image signals are output from the solid-state image sensing device 1 can be increased without deteriorating image quality.

Preferably, as shown in FIG. 15, one pixel mixing group is composed of 9 pixels, including each of three pixels arranged every other pixel in the horizontal direction in three rows arranged every other row in the vertical direction, because in this In this case, the signal pixels of all photodiodes can be mixed without waste, thus improving the sensitivity. In this case, as shown in FIG. 15 , the centers of gravity of the mixed groups of pixels of the respective colors R, G, and B are equally spaced. Therefore, an image with high resolution and less moiré can be obtained.

In this case, for example, the following method is employed as a method of mixing signal charges of three rows arranged every other row in the vertical direction.

(1) First, signal charges of pixels arranged every second row and corresponding to 1/3 of all pixels are read out to the vertical transfer section 3, and then transferred vertically by a distance corresponding to two pixels.

(2) Next, the signal charge of the pixel positioned second in the forward direction from the pixel from which the signal charge was read last time is read out to the vertical transfer section 3 . They are mixed with the signal charge that was read out last time, and then vertically transported by a distance corresponding to two pixels.

(3) Furthermore, the signal charges of the remaining pixels are read out to the vertical transfer section 3 , whereby the signal charges of three pixels arranged every other pixel are mixed together.

In the case of an electrode structure (six phases) corresponding to one vertical transfer level of three pixels, the above operation can be performed. On the other hand, in the case of an electrode structure (four phases) in which one vertical transfer level corresponds to two pixels, since all readout electrodes corresponding to six pixels included in three levels forming one cell are required to be independent, So a total of eight phase electrodes are required.

For example, as shown in FIG. 16 , a pixel mixing group may be composed of six pixels, wherein the pixels located in the middle row in the vertical direction among the nine pixels shown in FIG. 15 are removed. Also in this case, for each of the colors R, G, and B, the centers of gravity of the pixel mixing groups are equally spaced. Therefore, images with high resolution and less moiré can be obtained.

In addition, as shown in FIG. 17 , one pixel mixing group may be composed of only three pixels arranged in the horizontal direction, and two rows out of the three rows arranged in the horizontal direction may be excluded.

As described above, it is also possible to further increase the signal output speed by excluding some rows to reduce the number of pixels arranged in the vertical direction. Examples of methods of reducing the number of pixels arranged in the vertical direction include a method in which, when signal charges are read out from photodiodes forming the pixels to the vertical transfer section 3, signal charges existing in unnecessary rows are continuously stored in the photodiodes. The diodes are not read out, thereby excluding pixels located in rows that are not read out. In this case, signal charges not to be read out can be released from the photodiode to the substrate or the like.

Fig. 18 shows an example of an electrode structure employed for realizing the above driving. In the electrode structure shown in FIG. 18, the vertical transfer stages of the vertical transfer section 3 are each formed of six transfer electrodes (common electrodes) of phases V1 to V6. However, the vertical final stage is different from other vertical transfer stages in electrode structure. That is, in order to enable the vertical final stage of the second column to perform a transfer operation independently of other vertical transfer stages and vertical final stages of other columns (i.e., the first and third columns), the third phase and the fifth phase are determined by different The separate electrodes (VC1 and VC2) above the common electrode are formed. In addition, in order to enable the vertical final stage of the third column to perform a transfer operation independently of other vertical transfer stages and vertical final stages of other columns (ie, the first column and the second column), the third phase and the fifth phase are made different from The above-mentioned common electrode and the independent electrodes (VC3 and VC4) of the second column of independent electrodes are formed. The vertical final stage of the first column is formed by the common electrodes V1 to V6 like the other vertical transfer stages.

Adoption of this electrode structure enables each of the vertical final stages located in the second and third columns of every three columns to independently perform a transfer operation. Therefore, the transfer operations shown in FIGS. 3 to 13 can be performed.

Alternatively, as shown in Fig. 19, the vertical final stages of the first column may also be formed by separate electrodes (VC5 and VC6) for the third and fifth phases. When this structure is adopted, firstly only the first column is made to perform the transfer operation, and then all the vertical transfer stages can be made to perform one-stage transfer, instead of performing the transfer operation simultaneously by all the vertical transfer units 3 in the state shown in FIG. 7 .

In the case of using six-phase driving for the vertical transfer section 3, preferably, among the six electrodes provided in each vertical final stage of the second and third columns (or all of the first to third columns), two of them Or three are independent electrodes. 20 and 21 show examples of structures employed when the three transfer electrodes provided in the vertical final stage are independent electrodes. It does not matter whether these two or three separate electrodes adjoin each other. However, when considering the production process, preferably, there is at least one common electrode between two individual electrodes.

Therefore, in the case of six-phase driving, for example, it is preferable that, as shown in each of FIGS. Or as shown in each of Figs. 20 and 21, the electrodes arranged second, fourth and sixth from one side of the horizontal transfer member 4 are independent electrodes. However, the electrode structure of the vertical final stage is not limited to these specific examples.

In this embodiment, an electrode structure for six-phase driving is described as an example, but three-phase or four-phase driving may also be employed. In the case of three-phase or four-phase drives, however, two separate poles are used.

FIG. 22 shows a specific example of the arrangement of gate electrodes employed in the electrode structures shown in FIGS. 18 and 19. Referring to FIG. In FIG. 22 , each of the transfer channels 52 is formed between two channel stoppers 51 as the vertical transfer member 3 . In the example shown in FIG. 22, in the transfer stages other than the vertical final stage of the vertical transfer section 3, three transfer electrodes V2, V4, and V6 are formed of electrode films arranged in one layer (first-layer electrodes). , as the common electrode for all columns. In the same manner, the three transfer electrodes V1, V3, and V5 are also formed of an electrode film arranged in one layer (second-layer electrode) positioned on the first-layer electrode as a common electrode for all columns. On the other hand, in the vertical final stage, the same electrode film as that used for the electrodes of the second layer is formed in a pattern in which isolated parts are separated from each other and arranged corresponding to respective columns, whereby the third and The transfer electrodes of the fifth phase (second and fourth electrodes when counted from the horizontal transfer member 4 side) form individual electrodes φV3A to φV3C and φV5A to φV5C, respectively. As shown in FIG. 18, when the vertical final stages of the first column are not independently driven, the electrodes φV3A and φV5A shown in FIG. 22 may be connected to terminals connected to the electrodes φV3 and φV5, respectively.

The gate electrode structure shown in FIG. 22 is described as an example, wherein the gate electrode is formed of a first-layer or second-layer transfer electrode. However, as shown in FIG. 29, the transfer electrode may be formed of any one of the first to third electrode films. In the example shown in FIG. 29, in the transfer stages other than the vertical final stage of the vertical transfer section 3, the three transfer electrodes V2, V4, and V6 are composed of electrode films arranged in one layer (first-layer electrodes). Formed, respectively, as a common electrode for all columns. Similarly, the three transfer electrodes V1, V3, and V5 are also formed of electrode films arranged in one layer (second-layer electrode) located on the first-layer electrode, respectively serving as common electrodes for all columns. On the other hand, in the vertical final stage, the transfer electrodes V1, V3C, V5A, and V5B are formed by the transfer electrodes of the third layer, the transfer electrodes V3A, V3B, and V5C are formed of the transfer electrodes arranged in the second layer, and the transfer electrodes V2 , V4 and V6 are formed by transfer electrodes arranged in the first layer.

With such a structure, the transfer electrodes forming the third and fifth phases (ie, the second and fourth electrodes counted from the horizontal transfer member 4 side) are formed as individual electrodes φV3A to φV3C and φV5A to φV5C. As shown in FIG. 18, when the vertical final stages of the first column are not independently driven, the electrodes φV3A and φV5A shown in FIG. 29 may be connected to terminals connected to the electrodes φV3 and φV5, respectively.

In the example shown in FIG. 29, the electrodes V1, V3C, V5A, and V5B are formed of electrode films arranged in the third layer, but the electrode films of the respective transfer electrodes are not limited thereto. In the gate electrode structure shown in FIG. 29, the gate electrode may be formed of any one of the electrode films arranged in the first to third layers, but cannot be formed of an electrode film arranged in the fourth layer or any layer thereon. to form. In the gate electrode structure shown in FIG. 22, since the transfer electrode can be formed in two layers, the formation of the electrode film is relatively simple, but since the individual electrodes are separated from each other in the form of isolated parts, a separate wiring is required to connect one gate The individual electrodes are connected to each other. In contrast, when the transfer electrode is formed of an electrode film arranged in the third layer or any layer thereon, since independent electrodes of one gate are connected to each other through one electrode film, there is no need for a separate wiring, which is an advantage.

Using the electrode structure shown in FIG. 18 as an example, the timing chart shown in FIG. 23 represents the timing of control signals to be applied to the respective transfer electrodes of the vertical transfer section 3 and the horizontal transfer section 4 from a control unit (not shown). , and the state of the transferred charge corresponding to this timing diagram. In the case of this electrode structure, as shown in FIG. 24 , signal charges read out from the photoelectric conversion element 2 are stored in the transfer electrodes V3 and V4.

In FIG. 23, when the high level of the driving pulse is applied to the respective electrodes V1 to V6 and VC1 to VC4, these electrodes function as memory elements, while when the low level of the driving pulse is applied thereto, they function as blocking parts.

The pixel mixing described in this embodiment can be realized by driving the vertical transfer section 3 and the horizontal transfer section 4 according to the timing chart shown in FIG. 23 . As shown in FIG. 23 , it is preferable to set the electrode φV2 to the high level (at time t1 ) before the time point ( t2 ) at which the electrode φV4 is set to the low level.

When the electrode φV2 is set to high level at the time t1, the electrodes storing the signal charge before the time t1 are φV3 and φV4, between the time t1 and t2 are φV2, φV3 (φVC3) and φV4, between the time t2 and t3 are φV2 and φV3 (φVC3). This provides an advantage that during the transfer of the signal charges to the horizontal transfer section 4, loss of the vertical transfer stage signal charge which is not transferred is avoided.

Fig. 25 shows an example in which, in the vertical end stages of two of the three columns adjacent to each other, the second and fourth transfer electrodes located from the end of the horizontal transfer part are independent electrodes, which are independent of the other columns , and in all the vertical final stages of the three columns adjacent to each other, the first, third and fifth transfer electrodes from the end of the horizontal transfer part are different from those in other stages of the respective vertical transfer parts The transmission electrode in . The timing chart shown in FIG. 26 represents the timing of control signals to be applied to the respective transfer electrodes, and the state of the transferred charges corresponding to the timing chart. The operation shown in FIG. 26 differs from the operation shown in FIG. 23 in that when the charges of the vertical final stages of the first and second columns are selectively transferred to the horizontal CCD, only the drive provided to the vertical final stages The electrodes VC1 to VC4, V2', V4', and V6' among the electrodes of the array, and only when the charge of the third column is selectively transferred to the horizontal CCD, a pulse is applied to the electrodes including V1 to V6 common to the entire screen, and thereby transport charge. Therefore, power consumption can be reduced compared to the example of the structure shown in FIG. 23 . In this connection, the electrode V2' provided in the vertical final stage shown in Fig. 25 may be the same as the electrode V2 of the other stages of the vertical transfer section.

Fig. 27 is a graph showing the horizontal spatial frequency response. In FIG. 27, g1 represents the frequency response in the case of using all pixels without mixing pixels. The Nyquist frequency F of the full pixel is related to the sampling frequency f of the full pixel, and the relationship is expressed by the formula F=1/2×f. When sampling at 1/3 of the common frequency by excluding pixels, etc., the component at 2/3F is superimposed on the DC component due to the aliasing error caused by the component with a frequency higher than 1/3F of the Nyquist frequency. In FIG. 27 , g2 represents a frequency response obtained when two pixels positioned on the right and left among three pixels arranged horizontally are mixed together as in Patent Document 1 described above. In this case, since the Nyquist frequency is 1/3F, the component at 2/3F is about 0.25, and the aliasing error is added to DC to generate aliasing. In FIG. 27, g3 represents a frequency response obtained when three pixels arranged every other pixel are mixed together according to the present invention. The Nyquist frequency is 1/3F and the component at 2/3F is 0. Therefore, almost no aliasing errors are added to DC. As shown in FIG. 27, the solid-state image sensing device 1 can obtain high-quality image signals with less moiré and aliasing.

In the above-described embodiments, the structure and driving method of mixing together three pixels arranged in the horizontal direction have been described. However, the present invention can be used for blending three pixels or pixels whose number is odd and greater than three. From the description of this embodiment, those skilled in the art will understand the structure and driving method for mixing five or more pixels.

Furthermore, the present invention is not limited to a solid-state image sensing device having filters arranged as shown in FIG. 1, and it can also be applied to a solid-state image sensing device having filters formed in a different form. In addition, the present invention can also be used in a solid-state image sensing device for a monochrome image that does not use a color filter.

When the solid-state image sensing device described in this embodiment is used for a digital camera, since data is output at high speed from the solid-state image sensing device, a digital camera that can operate at high speed and is excellent in image quality can be obtained. Since it is possible to switch between the high-speed operation of the present invention and the normal operation of reading out all pixels, a digital camera having a moving image (high-speed operation) mode and a still image (operation of reading out all pixels) mode can be obtained. Fig. 28 shows an example of the structure of a digital camera according to the present invention. The digital camera has: an optical system 31 including a lens for focusing incident light from an object on the imaging plane of the solid-state image sensing device 1; a control unit 32 that controls the driving of the solid-state image sensing device 1; and an image processor 33. Perform various signal processing on the signal output by the solid-state image sensing device 1 .

In the digital camera according to the present invention, when the solid-state image sensing device is not provided with a color filter and pixels arranged continuously in the horizontal direction are mixed, by using a dichroic mirror or the like (so-called three-plate type Color camera) can add color to the image to be acquired. Furthermore, in the case of a three-plate type color camera, preferably, m is set to 2 (m=2), and its operation mode is selectively switchable between at least two modes including one in which pixel mixing is not performed. The first pattern and the second pattern of mixing two pixels adjacent to each other in the vertical direction and two pixels adjacent to each other in the horizontal direction.

second embodiment

The following description is for a solid-state image sensing device according to a second embodiment of the present invention.

The basic structure of the solid-state image sensing device according to the present embodiment is basically the same as that of the solid-state image sensing device (see FIG. 22 ) according to the first embodiment. However, the solid-state image sensing device of the present embodiment differs from that of the first embodiment in the method of driving the vertical transfer section 3 and the horizontal transfer section 4 .

The solid-state image sensing device of the present embodiment has a structure in which the vertical final stage has transfer electrodes formed to repeat the same structure every m (m represents an integer of 2 or more) columns, in order to control the The operation of signal charge transfer to said horizontal transfer section 4 provides transfer electrodes in all vertical final stages of m columns that are independent from transfer electrodes of other column vertical final stages. The structure and operation of the solid-state image sensing device according to this embodiment will be described below using a specific example where m=3. When m=3, the structure of the solid-state image sensing device is the same as that of the solid-state image sensing device shown in FIG. 22 of the first embodiment.

The operation of the solid-state image sensing device according to the present embodiment will be described below with reference to FIGS. 30 to 47 . In FIGS. 30 to 47, the respective signal charges read out to the vertical transfer section 3 are numbered, and the movement of the signal charges is indicated by the numbers. In FIG. 30 and the like, only 8×8 pixels are shown. However, it should be understood that the column containing the numbers 19, 29, ... and 89 is provided to the right of the column containing the numbers 18, 28, ... and 88, and further provided on the right side thereof , which is then followed further to the right by a column containing the numbers 111, 211, ... and 811.

FIG. 30 shows a state where signal charges read out from the respective pixels of the photoelectric conversion section 2 are transferred to the vertical transfer section 3 . From this state, first, only the transfer electrodes provided in the vertical final stages of the vertical transfer sections 3 located in every other column are allowed to perform a transfer operation. Therefore, as shown in FIG. 31 , among the signal charges of the vertical final stage of the vertical transfer section 3 , the signal charges in the above-mentioned columns arranged every two columns are transferred to the horizontal transfer section 4 . Next, as shown in FIG. 32, the signal charges existing in the horizontal transfer section 4 are horizontally transferred forward by a distance corresponding to one pixel.

Further, as shown in FIG. 33 , only the transfer electrodes provided in the vertical final stages of the vertical transfer section 3 located at every other column (other than the column performing transfer shown in FIG. 31 ) are allowed to perform a transfer operation. Therefore, of the signal charges at the vertical final stage of the vertical transfer section 3 , the signal charges in the above-mentioned columns arranged every other column are transferred to the horizontal transfer section 4 . Through such transfer, the signal charges of two columns out of every three columns are mixed together in the horizontal transfer section 4 . Next, as shown in FIG. 34, the signal charge existing in the horizontal transfer section 4 is horizontally transferred forward by a distance corresponding to one pixel.

Next, as shown in FIG. 35 , only the transfer electrodes provided in the vertical final stages of the vertical transfer section 3 located at every second column (other than the columns performing the transfer shown in FIGS. 31 , 33 ) are allowed to perform a transfer operation . Therefore, of the signal charges at the vertical final stage of the vertical transfer section 3 , the signal charges in the above-mentioned columns arranged every other column are transferred to the horizontal transfer section 4 . Through the above transfer operation, as shown in FIG. 35 , the signal charges of the vertical final stages of the vertical transfer sections 3 of each of the three columns are mixed together in the horizontal transfer section 4 .

Then, as shown in FIG. 36 , an operation of vertically transferring the signal charge by one stage to the vertical final stage is performed for all the transfer stages of the vertical transfer section 3 .

Thereafter, vertical transfer and horizontal transfer ( FIGS. 37 to 41 ) are repeated in the same steps as described above for signal charges ( 21 to 28 ) located in the vertical final stages shown in FIG. 36 . Therefore, in the horizontal transfer section 4, the signal charges of each of the three columns are mixed together.

In addition, as shown in FIG. 42 , the operation of vertically transferring signal charges to the vertical final stage by one stage is performed for all transfer stages of the vertical transfer section 3 . For signal charges (31 to 38) located at the vertical final stage, vertical transfer and horizontal transfer are repeated in the same steps as described above (FIGS. 42 to 47). Therefore, in the horizontal transfer section 4, the signal charges of each of the three columns are mixed together.

Thereafter, signal charges of three stages that have been mixed in the horizontal transfer section 4 as shown in FIG. 47 are sequentially output from the horizontal transfer section 4 .

As described above, the solid-state image sensing device of this embodiment can realize three-pixel mixing.

In the present embodiment, an example in which each of three pixels adjacent to each other in the horizontal direction are mixed together in the horizontal transfer section 4 is described. However, the pixels to be blended together do not have to be adjacent to each other. For example, when color filters are provided, preferably, pixels provided with filters of the same color are mixed together. On the other hand, in the case where the solid-state image sensing device does not have a color filter, it is preferable that pixels adjacent to each other are mixed together because deterioration of the spatial frequency characteristic is not caused in this case.

An example where m=3 is described in this embodiment. However, those skilled in the art can easily understand that even in the case of m=2 or m=4 or more, by repeating the vertical transfer and horizontal transfer of the signal charge of the column arranged in every m columns, it is possible to realize A blend of m pixels.

In addition, for example, in the case of m=6, that is, the vertical final stage has transfer electrodes formed to repeat the same structure every 6 columns, and 5 or all of the 6 electrodes are formed independently of other columns, thereby being independent of other columns to perform the operation of transferring the signal charge to the horizontal transfer section. By changing the pattern of control signals sent to the vertical transfer section 3 and the horizontal transfer section 4, this operation can be performed in four types of modes, namely, six-pixel mixing mode, three-pixel mixing mode, two-pixel mixing mode, and zero-pixel mixing mode. That is, theoretically, a pattern in which the number of pixels corresponds to an arbitrary number of mixed pixels that can divisibly divide a unit (number) of a transfer electrode having a repeating pattern of transfer electrodes arranged at a vertical final stage can be realized at will. structure.

For example, the above-mentioned mode of mixing a plurality of pixels is described with an example in which color filters are arranged in the form of a so-called Bayer array as shown in FIG. 48 . In FIG. 48, characters R, G, and B indicate colors of filters provided corresponding to respective pixels. In this case, the nine-pixel mixed mode and the four-pixel mixed mode can be realized using the solid-state image sensing device where m=12, that is, the vertical final stage has transfer electrodes formed to repeat the same structure every 12 columns, and the The transfer electrodes of eleven or all of the columns may be configured independently of the other columns, so that the operation of transferring signal charges to the horizontal transfer section can be performed independently of the other columns. In the nine-pixel blending mode, nine pixels of each of the colors R, G, and B are blended together by blending nine pixels of three levels arranged every other level in the vertical direction, of which three levels Each level has three pixels arranged every other pixel in the horizontal direction. On the other hand, in the four-pixel blending mode, four pixels of each of the colors R, G, and B are blended together by blending four pixels in two stages arranged every other stage in the vertical direction. , where there are two pixels every other pixel in the horizontal direction in each of the two levels.

In the case described above, pixel mixing in the vertical direction can be performed at the vertical transfer stage or in the horizontal transfer section.

third embodiment

The following description is mainly about a solid-state image sensing device according to still another embodiment of the present invention.

The solid-state image sensing device of this embodiment has the same structure as that of the second embodiment, but differs therefrom in that the combination of pixels to be mixed together changes step by step.

For the case of m=2, its specific operation will be described with reference to FIGS. 49 to 57 . In FIGS. 49 to 57, the respective signal charges read out to the vertical transfer section 3 are numbered, and movement of the signal charges is indicated by the number. In FIG. 49 and other figures, only 8x8 pixels are shown. However, it should be understood that a column containing numbers 19, 29, ... and 89 is provided to the right of a column containing numbers 18, 28, ..., and 88, and a column containing numbers 110, 210, ..., 810 is further provided to the right thereof column.

FIG. 49 shows a state where signal charges read out from the respective pixels of the photoelectric conversion section 2 are transferred to the vertical transfer section 3 . From this state, first, among the transfer electrodes in the vertical final stage of the vertical transfer section 3, only the transfer electrodes provided in the even-numbered columns are allowed to perform a transfer operation, as shown in FIG. 50 . Therefore, among the signal charges of the vertical final stage of the vertical transfer section 3 , those in the columns arranged every other column are transferred to the horizontal transfer section 4 . Next, as shown in FIG. 51, the signal charges present in the horizontal transfer section 4 are horizontally transferred forward by a distance corresponding to one pixel.

As shown in FIG. 52, among the transfer electrodes in the vertical final stage of the vertical transfer section 3, only the transfer electrodes arranged in odd-numbered columns are allowed to perform a transfer operation. Therefore, of the signal charges of the vertical final stage of the vertical transfer section 3 , those in the columns arranged every other column are transferred to the horizontal transfer section 4 . By this transfer operation, in the horizontal transfer section 4, the signal charges in the vertical final stages of every two columns are mixed together.

Next, as shown in FIG. 53 , the operation of vertically transferring the signal charge by one stage to the vertical final stage is performed on all the transfer stages of the vertical transfer section 3 . Subsequently, as shown in FIG. 54, the signal charges present in the horizontal transfer section 4 are horizontally transferred forward by a distance corresponding to one pixel. Thereafter, as shown in FIG. 55, among the transfer electrodes of the vertical final stage of the vertical transfer section 3, only the transfer electrodes provided in the odd-numbered columns are allowed to perform a transfer operation. Therefore, among the signal charges of the vertical final stage of the vertical transfer section 3 , the signal charges of columns arranged every other column are transferred to the horizontal transfer section 4 . Next, as shown in FIG. 56, the signal charge present in the horizontal transfer section 4 is horizontally transferred forward by a distance corresponding to one pixel. Subsequently, as shown in FIG. 57, among the transfer electrodes of the vertical final stage of the vertical transfer section 3, only the transfer electrodes provided in the even-numbered columns are allowed to perform a transfer operation. Therefore, among the signal charges of the vertical final stage of the vertical transfer section 3 , the signal charges of columns arranged every other column are transferred to the horizontal transfer section 4 . Through this transfer operation, the signal charges in the vertical final stages of every two columns are mixed together in the horizontal transfer section 4 .

Thereafter, the same operations as those shown in FIGS. 49 to 57 are repeated.

In this embodiment, with this process, the signal charges of every two pixels arranged in odd stages (in FIG. 49 The signal charges are numbered x1 to x8, where x is an odd number) mixed together. On the other hand, the signal charges of every two pixels (numbered x1 to x8 in FIG. Signal charges, where x is an even number) are mixed together.

Therefore, as shown by the circles in FIG. 58 , the centers of gravity of every two pixels to be blended together in odd stages and the centers of gravity of every two pixels to be blended together in even stages are arranged alternately in proportion. In this way, the centers of gravity of pixel groups to be blended together are equally spaced in the horizontal direction. This offers the advantage that the visible resolution is increased and thus a sharper image can be obtained.

As in the solid-state image sensing device according to the first embodiment, when the solid-state image sensing devices according to the second and third embodiments (see FIG. High-speed data output in sensor devices. Therefore, a digital camera capable of high-speed operation and excellent image quality can be obtained. Furthermore, when the solid-state image sensing device is employed, it is possible to switch between high-speed operation according to the present invention and normal operation in which all pixels are read out. Therefore, a digital camera having both a moving image (high-speed operation) mode and a still image (operation to read out all pixels) mode can be obtained.

It is also preferable to manufacture a digital camera using any one of the solid-state image sensing devices according to the first to third embodiments, which allows it to output all pixel signal charges without performing pixel mixing and perform four Switch between pixel blending modes. For example, such a digital camera can output images in HDTV moving image mode (1000 pixels arranged vertically × 2000 pixels arranged horizontally) and in SDTV moving image mode (500 pixels arranged vertically × 1000 pixels arranged horizontally), HDTV moving image mode is as a mode that does not involve pixel blending, and the SDTV moving picture mode is a mode that performs four-pixel blending. It can output high-resolution images in HDTV moving image mode, and can output high-sensitivity and high-frame-rate images in SDTV moving image mode.

In addition, solid-state image sensing devices having at least about 8 million pixels, and more specifically, solid-state image sensing devices having at least 2160 pixels arranged vertically and at least 3840 pixels arranged horizontally, are fabricated such that their modes can be selectively Switch between at least two modes including: Imaging for TV format with 720 scan lines provided by mixing (three pixels arranged vertically) x (three pixels arranged horizontally) by 9 pixels mode, and an imaging mode for a TV format with 1080 scanning lines provided by mixing (2 pixels arranged vertically)×(2 pixels arranged horizontally) 4 pixels. This makes it possible to switch between a mode that outputs images with high resolution and a mode that outputs images with high sensitivity and a high frame rate.

In addition, when using an imaging mode in which 16 pixels (4 pixels arranged vertically) × (4 pixels arranged horizontally) are mixed together, NTSC system with 480 scanning lines or 575 scanning lines can be realized Imaging mode of the PAL system.

Such a digital camera may have a structure including a solid-state image sensing device provided with color filters, or may be a so-called three-plate type camera in which no color filter is included in the solid-state image sensing device included in the three-plate type camera, and the color The image is obtained by using a dichroic mirror to split the light into beams of different colors. As described above, when the solid-state image sensing device is provided with color filters, preferably, pixels provided with filters of the same color are mixed together. On the other hand, in the case of a three-plate type camera, it is preferable that a plurality of pixels adjacent to each other are mixed together.

Industrial Applicability

The present invention is applicable to a solid-state image sensing device capable of outputting high-quality image signals at high speed without moire or aliasing by at least reducing the number of pixels arranged in the horizontal direction.

Claims (38)

1. Solid-state image sensor devices, including: a vertical transfer section provided corresponding to each column of two-dimensionally arranged pixels to vertically transfer signal charges read out from the pixels; and a horizontal transfer section for horizontally transferring signal charges received from said vertical transfer section, Wherein the vertical transfer section includes a plurality of transfer stages, the transfer stage positioned closest to the horizontal transfer section is a vertical final stage, and the vertical final stage has a feature that repeats every m (m represents an integer of 2 or more) columns transmission electrodes of the same structure, and The vertical end stages of columns other than one of the m columns or all vertical end stages of the m columns are each provided with a transfer electrode which is independent of the transfer electrodes of the other vertical end stages in the m columns and thus independent of all The other vertical final stages are described above to control the operation of transferring signal charges from the associated vertical final stages to the horizontal transfer section. 2. The solid-state image sensing device according to claim 1, wherein the integer m is 2n+1 (n represents an integer of 1 or more). 3. The solid-state image sensing device according to claim 2, wherein signal charges of pixels included in each of the first and second pixel mixing groups are superimposed together in said horizontal transfer section, Wherein each first pixel mixing group is composed of 2n+1 (n represents an integer of 1 or greater) pixels arranged every other pixel in the horizontal direction, and Each second pixel mixing group is arranged every other pixel and is composed of pixels other than the first pixel mixing group, and the pixel center of gravity of each second pixel mixing group is located away from the pixel center of gravity of two adjacent first pixel mixing groups equal distance. 4. The solid-state image sensing device according to claim 3, wherein for each of the first and second pixel mixing groups present in the vertical final stage, (a1) only the signal charge of the pixel farthest from the output terminal of the horizontal transfer part is transferred from the vertical final stage to the horizontal transfer part in each pixel mixing group, each pixel mixing group is composed of 2n+1 pixels, (a2) signal charges present in said horizontal transfer section are transferred forward by a distance corresponding to two pixels, (a3) Only the signal charge of the pixel having the remaining signal charge in the vertical final stage and positioned farthest from the output terminal of the horizontal transfer section is transferred from the vertical final stage to the horizontal transfer section in each pixel mixing group, each pixel mixing group is composed of 2n+1 pixels, and (a4) The transfer operations a2 and a3 are repeated until the signal charges of all pixel mixing groups each consisting of 2n+1 pixels are transferred from the vertical final stage to the horizontal transfer section. 5. The solid-state image sensing device according to claim 4, wherein further (b1) As the last operation of the transfer operations a1 to a4, after or simultaneously with the transfer of the signal charge of the last pixel contained in each pixel mixing group from the vertical final stage to the horizontal transfer section, the vertical transfer sections of all columns The signal charges present in are transferred to the respective next stages, said each pixel mixing group consisting of 2n+1 pixels, (b2) For the signal charge transferred to the vertical final stage by the transfer operation b1, performing the transfer operations a1 to a4, and (b3) The transfer operations b1 and b2 are repeated until the signal charges included in the 2n+1 stages are transferred to the horizontal transfer section. 6. The solid-state image sensing device according to claim 2, wherein the vertical final stage of the vertical transfer section positioned closest to said horizontal transfer section has transfer electrodes repeating the same structure every three columns, and Each of the vertical final stages of at least the second and third columns of the three columns, counting from the output of the horizontal transmission part, is provided with a transmission electrode independent of the transmission electrodes of the other vertical final stages , thereby controlling the operation of transferring signal charges from the respective relevant vertical final stages to the horizontal transfer section independently of the other vertical final stages. 7. The solid-state image sensing device according to claim 6, wherein the vertical final stage of the first column counted from the output end of the horizontal transfer part has a vertical final stage other than the vertical final stage of the first column. same electrode structure. 8. The solid-state image sensing device according to claim 6, wherein each first pixel mixing group is composed of three pixels arranged every other pixel in the horizontal direction, and Each second pixel mixing group is composed of three pixels arranged every other pixel except for the first pixel mixing group, and the pixel center of gravity of each second pixel mixing group is respectively located away from two adjacent first pixel mixing groups. The pixels of the group are at equal distances from the center of gravity. 9. The solid-state image sensing device according to claim 6, wherein (c1) only the signal charge of the vertical final stage of the second column among the three columns is transferred to the horizontal transfer section, counting from the output terminal of the horizontal transfer section, (c2) signal charges present in said horizontal transfer section are transferred forward by a distance corresponding to two pixels, (c3) only the signal charge of the vertical final stage of the third column among the three columns is transferred to the horizontal transfer section, counting from the output terminal of the horizontal transfer section, (c4) the signal charges present in the horizontal transfer section are transferred forward by a distance corresponding to two pixels, and (c5) The signal charge of the vertical final stage of the first column among the three columns is transferred to the horizontal transfer section counting from the output terminal of the horizontal transfer section. 10. The solid-state image sensing device according to claim 9, wherein (d1) after or simultaneously with the transfer of signal charges of the vertical final stage of the first column to said horizontal transfer section by transfer operation c5, the signal charges present in the vertical transfer sections of all columns are transferred to the respective next stages, (d2) For the signal charge transferred to the vertical final stage at the end of the transfer operation d1, transfer operations c1 to c5 are performed, and the signal charge of the vertical final stage of the first column is transferred to the horizontal transfer section by the transfer operation c5 Thereafter or simultaneously therewith, the signal charges present in the vertical transfer elements of all columns are transferred to the respective next stages, and (d3) The transfer operations c1 to c5 are performed on the signal charge transferred to the vertical final stage at the end of the transfer operation d2. 11. The solid-state image sensing device according to claim 3, wherein A pixel mixing group is composed of (2n+1)×(2n+1) pixels in the first or second pixel mixing group, and each of the first and second pixel mixing groups includes 2n pixels arranged every other row in the vertical direction 2n+1 pixels exist in the +1 row, and the signal charges of the pixels arranged in the 2n+1 row of each column are superimposed together in the respective vertical transfer sections. 12. The solid-state image sensing device according to claim 11, wherein said one pixel mixing group is composed of nine pixels in three rows arranged every other row in the vertical direction, and each row of said three rows includes every pixel in the horizontal direction. Three pixels arranged every other pixel. 13. The solid-state image sensing device according to claim 3, wherein one pixel mixing group is composed of 6 pixels arranged in two rows, there are three rows between the two rows in the vertical direction, and the pixels in the two rows are Each row includes three pixels arranged every other pixel in the horizontal direction. 14. The solid-state image sensing device according to claim 3, wherein a pixel mixing group is composed of three pixels arranged every three rows in the vertical direction and every other pixel in the horizontal direction. 15. The solid-state image sensing device according to claim 2, wherein the pixels arranged two-dimensionally are provided with color filters arranged so that 4 pixels of (2 pixels arranged horizontally)×(2 pixels arranged vertically) pixels form a unit. 16. The solid-state image sensing device according to claim 15, wherein the color filters are arranged such that the first color filter is provided to two pixels located on a diagonal line among the four pixels, and the second Second and third color filters are provided for the other 2 pixels respectively. 17. The solid-state image sensing device according to claim 3, wherein the pixels arranged two-dimensionally are provided with color filters arranged so that 8 pixels of (2 pixels arranged horizontally)×(4 pixels arranged vertically) pixels form one unit, and 2 pixels adjacent to each other in the vertical direction are mixed together in the vertical transfer section. 18. The solid-state image sensing device according to claim 6, wherein one vertical final stage of each column is formed by 6 transfer electrodes, and Among all the vertical transfer elements in the three columns adjacent to each other, among the six transfer electrodes, the second and fourth transfer electrodes located from one end of the horizontal transfer element are independent electrodes, and they are independent from the The transfer electrodes of the vertical final stages of the other columns, and the transfer electrodes located at the first, third, fifth and sixth are electrodes common to other stages of the respective vertical transfer elements. 19. The solid-state image sensing device according to claim 6, wherein one vertical final stage of each column is formed by 6 transfer electrodes, and In the vertical transmission parts of two columns among the three columns adjacent to each other, among the six transmission electrodes, the second and fourth transmission electrodes are independent electrodes counted from one end of the horizontal transmission part , which are independent of the transfer electrodes of the vertical final stages of the other columns, and the transfer electrodes located at the first, third, fifth and sixth are electrodes shared with other stages of the respective vertical transfer elements, and In the vertical transfer elements of the remaining one column of the three columns adjacent to each other, all 6 transfer electrodes located first to sixth are electrodes shared with other stages of the relevant vertical transfer elements. 20. The solid-state image sensing device according to claim 6, wherein one vertical final stage of each column is formed by 6 transfer electrodes, and Among all the vertical transfer parts in three columns adjacent to each other, among the six transfer electrodes, the second, fourth and sixth transfer electrodes are independent electrodes counted from one end of the horizontal transfer part , which are independent from the transfer electrodes of the vertical final stages of the other columns, and the transfer electrodes located at the first, third and fifth are electrodes shared with other stages of the respective vertical transfer elements. 21. The solid-state image sensing device according to claim 6, wherein a vertical final stage of each column is formed by 6 transfer electrodes, Among the vertical transfer elements in two of the three columns adjacent to each other, among the six transfer electrodes, counting from one end of the horizontal transfer element, the second, fourth, and sixth transfer electrodes are are independent electrodes which are independent from the transfer electrodes of the vertical final stages of the other columns, and the transfer electrodes located in the first, third and fifth are electrodes shared with other stages of the respective vertical transfer elements, and In the vertical transfer elements of the remaining one column of the three columns adjacent to each other, all 6 transfer electrodes located first to sixth are electrodes shared with other stages of the relevant vertical transfer elements. 22. The solid-state image sensing device according to claim 6, wherein the vertical final stage of each column is formed by 6 transfer electrodes, and Among the vertical transmission elements in at least two of the three adjacent columns, among the six transmission electrodes, counting from one end of the horizontal transmission element, the second and fourth transmission electrodes are independent electrodes, They are independent of the transfer electrodes of the vertical final stages of the other columns, and among all the vertical transfer elements of three columns adjacent to each other, the first and third transfer electrodes are located counting from the ends of the horizontal transfer elements. The electrodes are different from the electrodes provided in other stages of the respective vertical transport elements. 23. The solid-state image sensing device according to claim 6, wherein one vertical final stage of each column is formed by 6 transfer electrodes, and Among the vertical transmission elements in at least two of the three columns adjacent to each other, among the six transmission electrodes, counting from one end of the horizontal transmission element, the second, fourth and sixth transmission electrodes are are independent electrodes, which are independent from the transfer electrodes of the vertical end stages of other columns, and are located at the first position counted from the end of the horizontal transfer part in all the vertical transfer parts of all three columns adjacent to each other. The third and fifth transfer electrodes are different from the electrodes provided in other stages of the respective vertical transfer elements. 24. The solid-state image sensing device according to claim 1, wherein each stage of said vertical transfer section is formed of 6 transfer electrodes, and in transfer stages other than a vertical final stage of each vertical transfer section, Counting from one end of the horizontal transfer part, the second, fourth and sixth transfer electrodes are each formed of an electrode film of the first layer as an electrode common to all the columns, and from all the horizontal transfer parts Counting from the end, the transfer electrodes located at the first, third, and fifth are each formed of an electrode film of the second layer, which is an upper layer formed above the first layer, as an electrode common to all the columns. ,as well as In the respective vertical final stages, electrodes located second and fourth from the end of the horizontal transfer member as independent electrodes are each formed of the same electrode film as that of the second layer, and into isolated parts corresponding to the respective column distributions. 25. The solid-state image sensing device according to claim 1, wherein the vertical transport member has at least three layers of electrode films, and The transfer electrodes provided independently of the transfer electrodes of the vertical final stages of the other columns are formed of at least one of a plurality of electrode film layers including the top layer. 26. The solid-state image sensing device according to claim 1, wherein (e1) signal charges of pixels whose number is between 1 and (m-1) selected from m pixels arranged horizontally are transferred to said horizontal transfer section, (e2) signal charges present in said horizontal transfer section are transferred forward or backward by at least a distance corresponding to one pixel, and (e3) The transfer operations e1 and e2 are repeated, thereby transferring all the signal charges of m pixels to the horizontal transfer section. 27. The solid-state image sensing device according to claim 26, wherein (e4) After the transfer operation e3, the signal charges of all the columns are transferred to the horizontal transfer section by one stage, (e5) performing transfer operations e1 to e3 on the signal charge transferred to the vertical final stage by transfer operation e4, and The transfer operations e4 and e5 are repeated, thereby transferring all the signal charges contained in the m stages to the horizontal transfer section. 28. The solid-state image sensing device according to claim 1, wherein its mode of operation is selectively switchable between at least two modes, the two modes comprising, a horizontal array by driving the transfer electrodes independently of other columns A mode in which m pixels of m are mixed, in the vertical final stages of columns other than one of the m columns or in all columns, the transfer electrode is provided independently of the transfer electrodes of other columns, and a pass is the same as that of other columns A mode that drives the transfer electrodes in a manner that does not perform pixel mixing. 29. The solid-state image sensing device according to claim 1, wherein the integer m represents a common multiple of m1 (m1 represents an integer of 2 or greater) and m2 (m2 represents an integer of 2 or greater), and its operation mode can Selectively switch between at least two modes including a mode of mixing m1 pixels arranged horizontally and a mode of mixing m2 pixels arranged horizontally. 30. The solid-state image sensing device according to claim 29, further comprising color filters of three colors arranged in a repeated pattern, wherein in the color filters, two colors of the three colors are colored The filters are arranged vertically, and the color filters of two of the three colors are arranged horizontally, Wherein the operation mode can be selectively switched between at least two modes, these two modes include a mode of mixing m1 pixels arranged horizontally and a mode of mixing m2 pixels arranged horizontally, and meanwhile m1 pixels and m2 pixels are respectively provided with Color filter A filter of one of three colors. 31. The solid-state image sensing device according to claim 29, further comprising color filters of three colors arranged in a repeated pattern, wherein among the color filters, color filters of two colors among the three colors The light sheets are arranged vertically, and the color filters of two of the three colors are arranged horizontally, wherein the mode of operation can be selectively switched between at least two modes selected from the group consisting of a mixed horizontal arrangement of 2 pixels, a mixed horizontal arrangement of 3 pixels, and a mixed horizontal arrangement of 4 pixels A mode in which the 2, 3 and 4 pixels are each provided with a filter of one of three colors having a color filter. 32. The solid-state image sensing device according to claim 29, further comprising a mode of not mixing pixels as an operation mode. 33. The solid-state image sensing device according to claim 26, wherein m pixels are continuously arranged in a horizontal direction. 34. The solid-state image sensing device according to claim 26, wherein a combination of m pixels arranged in the horizontal direction changes step by step. 35. The solid-state image sensing device according to claim 34, wherein in at least two stages adjacent to each other, centers of gravity of combined m pixels are equally spaced in a horizontal direction. 36. A camera comprising the solid-state image sensing device according to claim 1. 37. A three-plate type camera comprising the solid-state image sensing device according to claim 33. 38. The three-plate type camera according to claim 37, wherein setting m to 2 enables selective switching of the operation mode between at least two modes including a first mode in which pixels are not mixed and a vertical direction mixed A second pattern of two pixels adjacent to each other and two pixels adjacent to each other in the horizontal direction.

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