CN1692636A

CN1692636A - Solid-state image pickup element and camera having the same

Info

Publication number: CN1692636A
Application number: CN200380100396.7A
Authority: CN
Inventors: 永吉良一; 藤井俊哉; 莲香刚; 河野明启; 田代信一; 板仓启二郎
Original assignee: Matsushita Electric Industrial Co Ltd
Current assignee: Panasonic Holdings Corp
Priority date: 2002-11-12
Filing date: 2003-11-11
Publication date: 2005-11-02
Anticipated expiration: 2023-11-11
Also published as: CN1330172C

Abstract

The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias. The solid-state image sensing device includes vertical transfer parts 3 in which signal charges read out from photoelectric conversion parts 2 arranged bidimensionally are transferred in the vertical direction stage by stage, a horizontal transfer part 4 in which signal charges received from the vertical transfer parts 3 are transferred in the horizontal direction, and a control unit that controls transfer operations of the vertical transfer parts 3 and horizontal transfer part 4, wherein vertical last stages of the vertical transfer parts 3 have transfer electrodes formed to have identical configurations repeated every 2n+1 (n denotes an integer of 1 or higher) columns, and vertical last stages of columns other than one column among the 2n+1 columns or all vertical stages are provided with transfer electrodes that are independent of those of the other vertical last stages.

Description

Solid-state image sensing device and use the camera of this solid-state image sensing device

Technical field

The present invention relates to the light that receives is converted to the signal of telecommunication and follow they solid-state image sensing devices as picture signal output.

Background technology

Routinely, known a kind of solid-state image sensing device that the light that receives is converted to the signal of telecommunication and then they is exported as picture signal, and the camera of static digital camera for example, can be shown as rest image from the picture signal that solid-state image sensing device obtains.Recently, for camera, need improve picture quality and function, and the density of pixel increases also increasingly with this solid-state image sensing device.

In this solid-state image sensing device,, proposed a kind of driving method, in the method, reduced the therefrom quantity of the pixel of read output signal electric charge in order to increase the speed of picture signal output.Reduced to be included in the pixel quantity in the output image signal thus.For example, JP11 (1999)-234688A discloses a kind of driving method, for example three pixels of wherein arranging in the horizontal direction form a piece, the signal charge of two pixels (being arranged in two pixels in right side and left side) the pixel in solid-state image sensing device in the middle of being positioned at each piece is admixed together, and the signal charge of pixel that is positioned at the signal charge of the pixel in the middle of each piece and adjacent thereto centre simultaneously is admixed together.Reduced thus at the pixel quantity of arranging in the horizontal direction that will from the picture signal of solid-state image sensing device output, comprise.

But, in the pixel quantity that horizontal direction is arranged reduces to 1/3 process, in the DC of signal component, added component, this component and the sample frequency of all using during the output signal electric charge when all pixels 1/3 corresponding as aliasing error.In the solid-state image sensing device that adopts above-mentioned conventional ADS driving method, corresponding to the component of 1/3 sample frequency non-vanishing (referring to Figure 27).This causes producing ripple (moire) or obscures (alias), and therefore makes the deterioration of image quality that is formed by output image signal, and this has become a difficult problem.

Summary of the invention

In order to solve this difficult problem, the present invention will provide a kind of solid-state image sensing device, and the pixel quantity that it can make horizontal direction arrange at least reduces, and can high speed outputting high quality picture signal and do not produce ripple or obscure.

To achieve these goals, solid-state image sensing device according to the present invention comprises: the vertical transfer parts corresponding to each row of the pixel of two-dimensional arrangements provide are used for the signal charge that vertical transfer is read from described pixel; With the horizontal transport parts, be used for the signal charge that horizontal transport is received from the vertical transfer parts.The dried up defeated nearest transmitting stage (transfer stage) of parts of flating pass is vertical final stage in the vertical transfer parts.Vertical final stage has transmission electrode, and this transmission electrode forms every m (m represent 2 or bigger integer) row and just repeats identical structure.All vertical final stages of the vertical final stage of the row in the m row the row or m row all respectively are provided with a transmission electrode, this transmission electrode be independent of with m row in the transmission electrode of other vertical final stage, control operation thereby be independent of described other vertical end from associated vertical final stage transmission signals electric charge to the horizontal transport parts.

This pixel quantity that horizontal direction is arranged reduces, and a kind of solid-state image sensing device of can high speed outputting high quality picture signal and not producing ripple or obscuring can be provided thus.

The accompanying drawing summary

Fig. 1 is the plane graph that solid-state image sensing device structure according to an embodiment of the invention is shown;

Fig. 2 is the key diagram that the combination of the pixel that is about to mixing in the solid-state image sensing device according to an embodiment of the invention is shown;

Fig. 3 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 4 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 5 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 6 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 7 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 8 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Fig. 9 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 10 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 11 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 12 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 13 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Among Figure 14 A to 14C each illustrates the key diagram of a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out;

Figure 15 is the key diagram of an example of the combination (pixel combined group) that is illustrated in the pixel that is about to mix in the solid-state image sensing device according to an embodiment of the invention;

Figure 16 is the key diagram of an example of the combination (pixel combined group) that is illustrated in the pixel that is about to mix in the solid-state image sensing device according to an embodiment of the invention;

Figure 17 is the key diagram of an example of the combination (pixel combined group) that is illustrated in the pixel that is about to mix in the solid-state image sensing device according to an embodiment of the invention;

Figure 18 is the key diagram that an example of electrode structure in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 19 is the key diagram that an example of electrode structure in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 20 is the key diagram that an example of electrode structure in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 21 is the key diagram that an example of electrode structure in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 22 is the plane graph that an example of gate electrode particular arrangement in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 23 is the key diagram that sequential chart is shown, and this sequential chart has been represented the sequential of control signal in the solid-state image sensing device according to an embodiment of the invention and according to the state of the electric charge of this sequential chart transmission;

Figure 24 is the key diagram that signal charge state in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 25 is the key diagram that an example of electrode structure in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 26 is the key diagram that sequential chart is shown, and this sequential chart has been represented the sequential of control signal in the solid-state image sensing device according to an embodiment of the invention and according to the state of the electric charge of this sequential chart transmission;

Figure 27 is the curve chart that the spatial frequency response of solid-state image sensing device according to an embodiment of the invention is shown;

Figure 28 is the block diagram that the schematic structure of camera according to an embodiment of the invention is shown;

Figure 29 is the plane graph that another example of gate electrode particular arrangement in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 30 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 31 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 32 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 33 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 34 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 35 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 36 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 37 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 38 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 39 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 40 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 41 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 42 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 43 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 44 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 45 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 46 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 47 is the key diagram that a step of the described pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 48 is the key diagram that an example of the colored filter that uses in the solid-state image sensing device according to an embodiment of the invention is shown;

Figure 49 is the key diagram that a step of the pixel married operation that solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 50 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 51 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 52 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 53 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 54 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 55 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 56 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 57 is the key diagram that a step of the described pixel married operation that described solid-state image sensing device according to an embodiment of the invention carries out is shown;

Figure 58 is the key diagram that illustrates by the position of centre of gravity that repeats the pixel that step is mixed shown in Figure 49 to 57.

Preferred forms of the present invention

The structure of solid-state image sensing device of the present invention comprises: the vertical transfer parts that provide corresponding to each row of the pixel of two-dimensional arrangements, be used for vertically transmitting the signal charge of reading from pixel, with the horizontal transport parts, be used for flatly transmitting the signal charge that is received from the vertical transfer parts, wherein the vertical transfer parts comprise transmitting stage, and the transmitting stage of the most close horizontal transport parts in position is vertical final stages, vertical final stage has transmission electrode, form this transmission electrode and be every m (m represent 2 or bigger integer) row and just repeat identical structure once, and each of all vertical final stages of the vertical final stage of the row except that row in the m row or m row all is provided with transmission electrode, the transmission electrode of other the vertical final stage in described transmission electrode and the m row is irrelevant, thereby irrespectively controls operation (structure 1) from associated vertical final stage transmission signals electric charge to the horizontal transport parts with described other vertical final stage.

The vertical transfer parts that provide in the solid-state image sensing device of the present invention can be formed by the vertical CCD that comprises photoelectric conversion part, and this photoelectric conversion part is, for example, and the photodiode and a plurality of vertical transfer level that provide corresponding to the pixel of two-dimensional arrangements; Or by having the light-receiving function and comprising that the vertical CCD of a plurality of vertical transfer levels forms.

According to said structure 1, by the inferior transmission operation of Repeated m, the signal charge of all vertical final stages is sent to the horizontal transport parts.When the transmission of the horizontal direction of carrying out when the transmission from vertical final stage to the horizontal transport parts and horizontal transport parts combines, can at random reorientate or mixed pixel output.By applying predetermined control signal, control the transmission operation of vertical transfer parts and horizontal transport parts to being respectively the transmission electrode that vertical transfer parts and horizontal transport parts provide.The device that is used to transmit control signal (control unit) can be positioned at outside the solid-state image sensing device, or forms one with solid-state image sensing device.

In solid-state image sensing device of the present invention, above-mentioned integer m can be 2n+1 (n represent 1 or bigger integer) (structure 2).In addition, in this solid-state image sensing device, preferably, the signal charge of pixel that is included in each groups of the first and second pixel combined group is superimposed in the horizontal transport parts, wherein the individual pixel of the 2n+1 that arranged every pixel by horizontal direction of each first pixel combined group (n represent 1 or bigger integer) constitutes, and each second pixel combined group is by arranging every pixel and being that 2n+1 pixel except that the first pixel combined group constitutes, and respectively the center of gravity of each of the pixel of second pixel combined group is positioned at from the equal position (structure 3) of two pixel centroidal distances that are adjacent of the first pixel combined group.

The pixel quantity that this structure allows horizontal direction to arrange reduces to 1/ (2n+1) and does not waste the signal charge of pixel.In addition, separate with same intervals, therefore can obtain to have high sensitivity, high-resolution and the picture signal of ripple still less owing to reduce the back mixed pixel at pixel quantity.

In this solid-state image sensing device, further preferred, for each of the first and second pixel combined group that exist in the vertical final stage, (a1) only be transferred to the horizontal transport parts from vertical final stage from the signal charge of the horizontal transport parts output pixel farthest of pixel combined group separately, described each pixel combined group is made up of 2n+1 pixel, (a2) signal charge that exists in the horizontal transport parts transmits the distance corresponding to two pixels forward, (a3) only in vertical final stage, has residual signal electric charge and be transferred to the horizontal transport parts from vertical final stage apart from the signal charge of the horizontal transport parts output pixel farthest of pixel groups, described each pixel groups is made up of 2n+1 pixel, (a4) repeat transmission operation (a2) and (a3), be transferred to horizontal transport parts (structure 4) from vertical final stage up to the signal charge of all pixel groups of forming by 2n+1 pixel.

By aforesaid operations, 2n+1 the pixel of arranging every a pixel can be mixed together, and the 2n+1 that further arranges between them pixel also can be mixed together.

In this solid-state image sensing device, further preferred, (b1) as the last operation that transmits operation a1 to a4, at the signal charge of the last pixel that each pixel groups comprises after vertical final stage is transferred to the horizontal transport parts or simultaneously, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately, described each pixel groups is made up of 2n+1 pixel, (b2) for the signal charge that is transferred to vertical final stage by aforesaid operations b1, carry out transmission operation a1 to a4, and (b3) repeat transmission and operate b1 and b2, the signal charge that comprises in 2n+1 level is transferred to horizontal transport parts (structure 5).

By aforesaid operations, owing to do not have blank transmission range in the horizontal transport parts, horizontal pixel quantity can reduce to 1/ (2n+1) and not increase horizontal transport speed.

In above-mentioned solid-state image sensing device, preferably, the position is dried up, and the flat pass vertical final stage of the nearest vertical transfer parts of defeated parts has transmission electrode, this transmission electrode forms has the identical structure that per three row just repeat, and, begin several from the output of horizontal transport parts, at least the second all is provided with transmission electrode with each of tertial vertical final stage in described three row, this transmission electrode is independent of the transmission electrode of other vertical final stage, thereby is independent of other operation (structure 6) of vertical final stage ground control from each relevant vertical final stage transmission signals electric charge to the horizontal transport parts.This makes three pixels of arranging in the horizontal direction to mix, and horizontal pixel quantity can be reduced to 1/3 thus.

In solid-state image sensing device according to said structure 6, preferred, begin the vertical final stage of the first several row from the output of horizontal transport parts, have with remove the first vertical final stage that is listed as grade the identical electrode structure (structure 7) of electrode structure.

In solid-state image sensing device according to structure 6, preferably, three pixels that each first pixel combined group is arranged every a pixel by horizontal direction are formed, and each second pixel combined group is made up of three pixels every a pixel arrangement except that the first pixel combined group, and the pixel center of gravity of each second pixel combined group is positioned at from the equal position (structure 8) of the pixel centroidal distance that is adjacent of two first pixel combined group.This structure makes the pixel quantity of arranging in the horizontal direction can reduce to 1/3 and do not waste the signal charge of pixel, and reduces the back at pixel quantity and allow mixed pixel to separate with same intervals.

In solid-state image sensing device according to structure 6, preferably, (c1) have only in above-mentioned three row signal charge that begins the vertical final stage of several secondary series from the output of horizontal transport parts to be transferred to the horizontal transport parts, (c2) signal charge that exists in the horizontal transport parts transmits the distance corresponding to two pixels forward, (c3) have only in above-mentioned three row signal charge that begins several tertial vertical final stages from the output of horizontal transport parts to be transferred to the horizontal transport parts, (c4) signal charge that exists in the horizontal transport parts transmits the distance corresponding to two pixels forward, is transferred to horizontal transport parts (structure 9) with the signal charge that begins the vertical final stage of the first several row from the output of horizontal transport parts in (c5) above-mentioned three row.By aforesaid operations, three pixels of arranging every a pixel can mix, and three pixels of arranging between them also can mix.In addition, reducing the back mixed pixel at pixel quantity can separate with same intervals.

In solid-state image sensing device according to structure 9, preferably, (d1) by transmission operation c5 the signal charge of the vertical final stage of first row is transferred to after the horizontal transport parts or with its simultaneously, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately, (d2) for the signal charge that when aforesaid operations d1 finishes, is transferred to vertical final stage, carry out transmission operation c1 to c5, and by operation c5 the signal charge of vertical final stage of first row is transferred to after the horizontal transport parts or with its simultaneously, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately, carries out transmission operation c1 to c5 (structure 10) with (d3) for the signal charge that is transferred to vertical final stage when operation d2 finishes.Because even there is not blank transmitting stage in three pixels of arranging in the horizontal direction in the horizontal transport parts when mixing yet, so aforesaid operations makes horizontal pixel quantity can reduce to 1/3 and do not increase horizontal transport speed.

In solid-state image sensing device according to structure 3, preferably, a pixel combined group is made up of (2n+1) * (2n+1) the individual pixel in the first or second pixel combined group, first, second pixel combined group is included in 2n+1 the pixel that 2n+1 that vertical direction arranges in every line exists in capable separately, and the signal charge that is arranged in the pixel of 2n+1 in capable of every row be superimposed in vertical transfer parts separately (structure 11).According to this structure, the data bulk of a width of cloth picture is 1/ ((2n+1) * (2n+1)), therefore can increase the frame number of time per unit.In addition, owing to there is not pixel to be wasted, therefore improved sensitivity.

In solid-state image sensing device according to structure 11, preferably, 9 pixels in the triplex row that pixel combined group is arranged in every line by vertical direction are formed, and each provisional capital in this triplex row is included in three pixels (structure 12) that horizontal direction is arranged every a pixel.Because the data bulk of a width of cloth picture reduces to 1/9, makes it possible to increase the frame number of time per unit.In addition, owing to there is not pixel to be wasted, therefore improved sensitivity.

In solid-state image sensing device according to structure 3, preferably, a pixel combined group is made up of 6 pixels that are arranged in two row, also has triplex row between above-mentioned in vertical direction two row, and described two row are included in three pixels (structure 13) that horizontal direction is arranged every a pixel separately.This just provides an advantage, that is, compare with the situation in the triplex row that mixed pixel is positioned at the vertical direction arrangement, and the linear signal scope has been widened.

In the solid-state image sensing device according to structure 3, preferred, a pixel combined group is formed (structure 14) by three pixels of arranging every a pixel on the horizontal direction in a row of two row on the vertical direction.This just provides an advantage, that is, compare with the situation in the triplex row that mixed pixel is positioned at the vertical direction arrangement, and the linear signal scope has further been widened.

In solid-state image sensing device according to structure 2, preferably, the pixel of two-dimensional arrangements has through the colored filter of arranging, and makes 4 pixels of (2 pixels of horizontal direction arrangement) * (2 pixels that vertical direction is arranged) form a unit (structure 15).By such structure,, can not change under the situation of arrangement and obtain image arranging good colored filter, so 4 pixels of (2 horizontal pixels) * (2 pixels of vertical arrangement) form a unit even after mixed pixel yet.

In solid-state image sensing device according to structure 15, preferably, arrange colored filter, make first colored filter offer 2 pixels that are positioned in 4 pixels on the diagonal, the second and the 3rd colored filter offers other 2 pixels (structure 16) respectively.

In solid-state image sensing device according to structure 3, preferably, the pixel of two-dimensional arrangements has the colored filter through arranging, make 8 pixels of (2 pixels of horizontal direction arrangement) * (4 pixels that vertical direction is arranged) form a unit, and in the vertical transfer parts, mix (structure 17) in vertical direction 2 pixels adjacent one another are.

In solid-state image sensing device according to the present invention, preferred, for each vertical final stage provides at least two independently electrodes.

For example, when the vertical final stage of each row is formed with 6 transmission electrodes, preferably, adopt following any structure: (1) is in all vertical transfer parts of three row adjacent one another are, in 6 transmission electrodes, beginning several transmission electrodes of the second and the 4th of being positioned at from an end of horizontal transport parts is absolute electrodes, they are independent of the transmission electrode of the vertical final stage of other row, are positioned at the first, the 3rd, the 5th and the 6th transmission electrode and are and the shared electrode (structure 18) of other grade of vertical transfer parts separately; (2) in the vertical transfer parts of two row in three row adjacent one another are, in 6 transmission electrodes, beginning several transmission electrodes of the second and the 4th of being positioned at from horizontal transport parts end is absolute electrodes, they are independent of the transmission electrode of the vertical final stage of other row, be positioned at first, the 3rd, the the 5th and the 6th transmission electrode is and the shared electrode of other grade of vertical transfer parts separately, and in the vertical transfer parts of residues one row of described three row adjacent one another are, being positioned at all 6 transmission electrodes of first to the 6th all is the electrode (structure 19) shared with other grade of described associated vertical transmission part; (3) in all vertical transfer parts of three row adjacent one another are, in 6 transmission electrodes, beginning several transmission electrodes of the second, the 4th and the 6th of being positioned at from horizontal transport parts end is absolute electrodes, they are independent of the transmission electrode of the vertical final stage of other row, are positioned at the first, the 3rd and the 5th transmission electrode and are and the shared electrode (structure 20) of other grade of vertical transfer parts separately; (4) in the vertical transfer parts of two row in three row adjacent one another are, in 6 transmission electrodes, begin several to be positioned at second from horizontal transport parts end, the the 4th and the 6th transmission electrode is an absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, be positioned at first, the the 3rd and the 5th transmission electrode is and the shared electrode of other grade of vertical transfer parts separately, and in the vertical transfer parts of residues one row of three row adjacent one another are, being positioned at all 6 transmission electrodes of first to the 6th all is the electrode (structure 21) shared with other grade of associated vertical transmission part; (5) in three adjacent column at least two row the vertical transfer parts in, in 6 transmission electrodes, beginning several transmission electrodes of the second and the 4th of being positioned at from horizontal transport parts end is absolute electrodes, they are independent of the transmission electrode of the vertical final stage of other row, and in vertical transfer parts of all three row adjacent one another are, begin several electrodes (structure 22) that the first and the 3rd transmission electrode is different to be provided at other grade of vertical transfer parts separately that are arranged in from horizontal transport parts end; (6) in three row adjacent one another are in the vertical transfer parts of at least two row, in 6 transmission electrodes, beginning several transmission electrodes of the second, the 4th and the 6th of being positioned at from horizontal transport parts end is absolute electrodes, they are independent of the transmission electrode of the vertical final stage of other row, and in vertical transfer parts of all three row adjacent one another are, begin several electrodes (structure 23) that the first, the 3rd and the 5th transmission electrode is different to be provided at other grade of vertical transfer parts separately that are arranged in from horizontal transport parts end.

In addition, in the solid-state image sensing device of the structure 1 according to the present invention, also can be preferably, each level of vertical transfer parts is formed with 6 transmission electrodes; In the transmitting stage except the vertical final stage of each vertical transfer parts, beginning several each electrode film by ground floor of transmission electrode of the second, the 4th and the 6th of being positioned at from horizontal transport parts end forms, as the shared electrode of all row, and beginning several each electrode film by the second layer of the first, the 3rd and the 5th transmission electrode that are positioned at from horizontal transport parts end forms, as the shared electrode of all row, the described second layer is formed in the more last layer above the ground floor; And in vertical final stage separately, as absolute electrode, from horizontal transport parts end begin several be positioned at second with the 4th electrode each is formed by the electrode film identical with the electrode film of the second layer, this film is divided into corresponding to the individual components of column distribution (structure 24) separately.The advantage that this structure provides is that the electrode film on upper strata forms the island form and helps wiring.

Perhaps, in the solid-state image sensing device of structure 1 according to the present invention, also can be preferably, the vertical transfer parts have triple electrode film at least, and the transmission electrode that being independent of the transmission electrode of the vertical final stage of other row provides forms (structure 25) by at least one layer electrode membrane that comprises top layer.This advantage that provides is that this use top layer forms and needn't connect up after this independent transmission electrode makes again.

Also can be preferably, the solid-state image sensing device of structure 1 has such structure according to the present invention, wherein (e1) quantity of choosing from m the pixel that horizontal direction is arranged is transferred to the horizontal transport parts at 1 signal charge to the pixel (m-1), (e2) signal charge that exists in the horizontal transport parts transfers to few distance corresponding to a pixel forward or backward, (e3) repeat transmission operation e1 and e2, thereby all signal charges of m pixel are transferred to horizontal transport parts (structure 26).

In addition, further preferred, solid-state image sensing device according to said structure 26 has such structure, wherein (e4) is after operation e3, the signal charge of all row is to horizontal transport parts transmission one-level, (e5) signal charge that is transferred to vertical final stage by above-mentioned transmission operation e4 is carried out above-mentioned transmission operation e1 to e3, repeat transmission operation e4 and e5 then, thus all signal charges that comprise in the m level are transferred to horizontal transport parts (structure 27).

In solid-state image sensing device according to structure 1, preferably, can be between at least two kinds of patterns switching operation modes optionally, comprise, a kind of by driving m the pattern that pixel is mixed that transmission electrode is arranged horizontal direction, mode with other row in the vertical final stage that is independent of the row except that row in m row or all row provides this transmission electrode, and a kind of by being listed as the pattern (structure 28) that identical mode drives transmission electrode and do not carry out the pixel mixing with other.Preferred this structure be because, its allow output have high-resolution picture image and not the pattern of mixed pixel and having by mixed pixel output between the pattern of picture image of high sensitivity and high frame per second switch.

Also can be preferably, solid-state image sensing device according to the present invention has such structure, wherein, integer m represents the common multiple of m1 (m1 represent 2 or bigger integer) and m2 (m2 represent 2 or bigger integer), and its operator scheme can optionally be switched between two kinds of patterns at least, and these two kinds of patterns comprise the pattern of m1 the pixel that mixed-level is arranged and the pattern (structure 29) of m2 the pixel that mixed-level is arranged.

In addition, in said structure 29, described solid-state image sensing device further can be provided with the colored filter of three kinds of colors of arranging with repeat pattern, wherein in colored filter, the colored filter that the colored filter of two kinds of colors in three kinds of colors is arranged in two kinds of colors in vertical direction and the three kinds of colors is arranged in horizontal direction, wherein can between at least two kinds of patterns, optionally switch, these two kinds of patterns comprise the pattern of m1 the pixel that mixed-level is arranged and the pattern of m2 the pixel that mixed-level is arranged, and wherein m1 pixel and m2 pixel are respectively arranged with a kind of filter (structure 30) in three kinds of colors with colored filter.

Perhaps, in said structure 29, solid-state image sensing device further can be provided with the colored filter of three kinds of colors of arranging with repeat pattern, wherein in colored filter, the colored filter of two kinds of colors in three kinds of colors is arranged in vertical direction, and the colored filter of two kinds of colors in three kinds of colors is arranged in horizontal direction, wherein can between at least two kinds of patterns, optionally switch, these two kinds of patterns are selected from: the pattern of 2 pixels that mixed-level is arranged, the pattern of 4 pixels that the pattern of 3 pixels that mixed-level is arranged and mixed-level are arranged, simultaneously this 2,3 and 4 pixels are respectively arranged with a kind of filter (structure 31) in three kinds of colors with colored filter.

Perhaps, in any said structure 29 to 31, the pattern that also can comprise mixed pixel not is as operator scheme (structure 32).This structure allow output have high-resolution picture image and not the pattern of mixed pixel and exporting by mixed pixel between the pattern of picture image with high sensitivity and high frame per second switch.

In said structure 26, m pixel can be arranged in horizontal direction (structure 33) continuously.Perhaps, the combination that is arranged in above-mentioned m pixel of horizontal direction can change (structure 34) step by step.When changing the combination of pixel step by step, preferred, in two-stage at least adjacent one another are, the center of gravity of the combination of an above-mentioned m pixel equally spaced separates (structure 35) in the horizontal direction.

In addition, camera of the present invention comprises any in the above-mentioned solid-state image sensing device, preferably, be a kind of three templates (three-plate type) color cameras, especially under the situation of the solid-state image sensing device that the continuously arranged pixel of usage level direction mixes.In addition, in the situation of three template color cameras, preferably, when m=2, can be between at least two kinds of patterns optionally switch, these two kinds of patterns comprise first pattern of mixed pixel not and mix vertical direction two pixels adjacent one another are and second pattern of two pixels that horizontal direction is adjacent one another are.

Hereinafter, describe specific embodiments of the invention with reference to the accompanying drawings.

First embodiment

Fig. 1 illustrates the schematic structure according to the solid-state image sensing device of present embodiment.The solid-state image sensing device 1 of present embodiment adopted one can be simultaneously and read the system of all pixels independently.Solid-state image sensing device 1 comprises the photoelectric conversion part 2 corresponding to pixel of two-dimensional arrangement, vertical transfer parts 3 and horizontal transport parts 4.These vertical transfer parts 3 and horizontal transport parts 4 are respectively formed by CCD.Use photodiode to be used as photoelectric conversion part 2.Each photoelectric conversion part 2 is provided with the colored filter of three kinds of colors, promptly red (R), green (G) and blue (B).In the present embodiment, each comfortable vertical and horizontal direction of R, G and B filter is periodically arranged every a pixel.For example, as shown in Figure 1, when 4 pixels of (2 pixels of vertical arrangement) * (2 horizontal pixels) form a unit, arrange that colored filter makes the pixel of lower left be set as R, lower right and upper left pixel are G, and the upper right side pixel is B.Control signal unshowned control unit from accompanying drawing is transferred to the transmission electrode of vertical transfer parts 3 and horizontal transport parts 4, thus the operation of control solid-state image sensing device 1.Above-mentioned control unit is arranged on the outside of solid-state image sensing device 1, and is connected to this solid-state image sensing device 1 by holding wire.Perhaps, control unit can combine with solid-state image sensing device 1 and form a unit with it.

In the present embodiment, vertical transfer parts 3 transmitting stage is included in the triplex row photoelectric conversion part 2 that vertical direction is arranged.By such structure, the pixel of arranging every a pixel in triplex row is superimposed in vertical transfer parts 3 separately.In addition, also provide transmitting stage to have the advantage of the capacity of increase.

Below explanation mainly is presented in the married operation of the pixel that horizontal direction is arranged in the solid-state image sensing device 1.

By operating by the vertical transfer parts 3 of control unit (not shown) control and the transmission of horizontal transport parts 4, solid-state image sensing device 1 is blended in horizontal direction each signal charge in three pixels that pixel is arranged, thereby the pixel quantity that horizontal direction is arranged reduces to 1/3.Fig. 2 shows the combination of the pixel that its signal charge will mix.Hereinafter, the combination that is about to the pixel that mixes is called as " pixel combined group ".Symbol shown in figure 2, Rxy for example, R, G or B are expressed as the filter color that related pixel provides, and x represents that the upright position of related pixel (is called the first order, the second level, sequentially the end from horizontal transport parts 4 begins several), and the position that y is illustrated in related pixel in the pixel combined group (is called the first, the second,, sequentially the output from horizontal transport parts 4 begins several).

As shown in Figure 2, in solid-state image sensing device 1, for example, three green pixels arranging every pixel are G11 for example, and G12 and G13 form the first pixel combined group.In addition, definite pixel combined group of being made up of blue pixel makes their center of gravity equally spaced separate with respect to each center of gravity by the mixed pixel of first pixel combined group generation.In other words, each is made of the second pixel combined group three pixels, they are at the G12 of the first pixel combined group and the B11 between the G13, in the above-mentioned G13 of the second pixel combined group adjacent and the pixel B 12 between the G11 with the above-mentioned first pixel combined group, and in the G11 and the pixel B between the G12 13 of the pixel combined group of the contiguous second pixel combined group.As mentioned above, in the pixel of two kinds of different colours alternately arranging, each in three pixels that a pixel is arranged is combined and mixes in the horizontal direction, thereby the center of gravity of every kind of colored pixels of Hun Heing uniformly-spaced separates thus.Therefore, can not produce ripple or obscure.

Next, with reference to the state transition diagram shown in Fig. 3 to 13, describe a kind of step that drives solid-state image sensing device 1, this step is used to mix packed-pixel as shown in Figure 2.

The vertical transfer parts 3 of solid-state image sensing device 1 dispose three row that form a unit.In Fig. 3 to 13, the signal charge of horizontal transport parts 4 outputs to an end in corresponding our left side, each row in three row of a unit of formation of vertical transfer parts 3, from being called as first row, secondary series and the 3rd row (in the drawings, being expressed as row 1, row 2 and row 3) in turn from the fan-out of horizontal transport parts 4.In addition, the transmitting stage of nearest each the vertical transfer parts 3 of the dried up hereinafter defeated parts 4 of flating pass is called as " vertical final stage ".

In the vertical final stage of the vertical transfer parts 3 that dispose three row that form a unit, second is configured so that separately that with tertial vertical final stage it carries out the transmission operation separately, and has nothing to do with other transmitting stage of related column and the vertical final stage of other row.In other words, when first with tertial vertical final stage in when maintaining signal charge, have only the signal charge of the vertical final stage of secondary series can be transferred to horizontal transport parts 4.In addition, when maintaining signal charge in the vertical final stage of first and second row, have only the signal charge of tertial vertical final stage can be transferred to horizontal transport parts 4.To be described as realizing the object lesson of the electrode structure of the vertical transfer parts 3 that this transmission operation is adopted below.

At first, as shown in Figure 3, in the vertical final stage that disposes three row that form a unit, only drive the vertical final stage of secondary series, shown in arrow among Fig. 3, only the signal charge of the vertical final stage of secondary series be transferred to horizontal transport parts 4 thus.

Next, as shown in Figure 4, the signal charge that exists in the horizontal transport parts 4 transmits the distance corresponding to two pixels forward.

Then, as shown in Figure 5, in the vertical final stage that disposes three row that form a unit, only drive tertial vertical final stage, only the signal charge of tertial vertical final stage is transferred to horizontal transport parts 4 thus, shown in arrow among Fig. 5.

By such transmission operation, as shown in Figure 6, the signal charge of two pixel G12 and G13 and B12 and B13 mixes in horizontal transport parts 4.After this, as shown in Figure 6, the signal charge that exists in the horizontal transport parts 4 transmits the distance corresponding to two pixels forward.

As shown in Figure 7, make all vertical transfer parts vertical transfer one stage signal electric charges, and therefore as shown in Figure 8, the signal charge of three pixel G11, G12 and G13, and the signal charge of B11, B12 and B13, in horizontal transport parts 4, mix respectively.In this way, be included in the same stages in two kinds of different colours each, in three pixels that a pixel is arranged, be combined, thereby mix.Therefore, the pixel quantity of horizontal direction arrangement reduces to 1/3.In addition, as what can understand,, therefore can not produce ripple or obscure because green mixed pixel and blue mixed pixel uniformly-spaced separate from Fig. 8.

From state shown in Figure 8, repeat the identical transmission operation shown in Fig. 3 to 7, and therefore, as shown in Figure 9, exist in the vertical final stage shown in Fig. 8 state, the signal charge of each in three pixels that a pixel is arranged is combined, thereby mixes in horizontal transport parts 4.

In addition, from state shown in Figure 9, repeat the identical transmission operation shown in Fig. 3 to 7, and therefore, as shown in figure 10, the signal charge of each in three pixels that a pixel is arranged that exists in the vertical final stage shown in Fig. 9 state is combined, thereby mixes in horizontal transport parts 4.This has just finished the transmission of the signal charge of all pixels that comprise in three levels of character " a " expression among Fig. 2 to horizontal transport parts 4.

Next, as shown in figure 11, export the signal charge that exists in the horizontal transport parts 4 in turn.Therefore, the signal charge of triplex row is from solid-state image sensing device 1 output, and the pixel quantity of horizontal direction arrangement simultaneously reduces to 1/3.

Thereafter, by repeating and above-described identical transmission operation, the signal charge of all pixels of arranging in three levels of character among Fig. 2 " b " expression is transferred to the horizontal transport parts 4 in the state shown in Figure 12, exports in turn from horizontal transport parts 4 then, as shown in figure 13.

As mentioned above, the pixel that adopts one dimension to arrange generates from the picture signal of horizontal transport parts 4 outputs of solid-state image sensing device 1.Therefore, for signal being returned to their original two-dimensional arrangements, the image processor that is positioned at solid-state image sensing device 1 outside is to carrying out the processing of reorientating two-dimensionally from the signal of horizontal transport parts 4 outputs.

For example, the pixel that comprises in each three grades of character " a " and " b " expression among Fig. 2 is exported from horizontal transport parts 4 with the order shown in Figure 14 A.In Figure 14 A, represent to be arranged in the pixel of the peripheral components of vertical CCD parts 3 with the interval of " empty (Dummy) " mark, and represent those wherein unmixed intervals together of signal charge of three pixels.In addition, the a7 to a12 shown in Figure 14 A and the 14B, a13 to a18, b7 to b12 and b13 to b18 are respectively the repetitions of a1 to a6 shown in Figure 11 and Figure 13 and b1 to b6.Yet following being marked with that changes them is shown clearly in their two-dimensional arrangements its position that occupies afterwards.In addition, the color of the mixed pixel of arranging is as shown in Figure 14B represented with character " R ", " G " and " B " in Figure 14 C.

As what can understand from Figure 14 C, even the pixel quantity that horizontal direction is arranged reduces to 1/3, solid-state image sensing device 1 also makes the arrangement of pixel can remain on initial condition.Therefore, can increase the speed of picture signal, and picture quality is degenerated from solid-state image sensing device 1 output.

Preferably, as shown in figure 15, a pixel combined group is made up of 9 pixels, be included in the triplex row that vertical direction arranges in every line each in three pixels that a pixel is arranged in the horizontal direction, because in this case, the signal pixels of all photodiodes can not have mixing lavishly, therefore can improve sensitivity.In this case, as shown in figure 15, the center of gravity of the pixel combined group of each color R, G and B uniformly-spaced separates.Therefore, can obtain to have the image of high-resolution and less ripple.

In this case, for example, adopt in the following method method as the signal charge that mixes the triplex row that vertical direction arranges in every line.

(1) at first, will arrange and read into vertical transfer parts 3, vertically transmit distance then corresponding to two pixels every two row corresponding to the signal charge of 1/3 pixel of all pixels.

(2) then, since the pixel number of read output signal electric charge last time,, be read out vertical transfer parts 3 forwards upwards being positioned at the signal charge of second pixel.They mix with the signal charge that read last time, vertically transmit the distance corresponding to two pixels then.

(3) in addition, the signal charge of rest of pixels is read into vertical transfer parts 3, the signal charge of three pixels will arranging every a pixel mixes thus.

In the situation of the electrode structure (six phase places) of corresponding three pixels of vertical transfer level, can carry out aforesaid operations.On the other hand, in the situation of the electrode structure (four phase places) of corresponding two pixels of vertical transfer level, because all the corresponding read-out electrodes of six pixels that comprise in three grades of a unit of requirement and formation are independently, so need the electrode of eight phase places altogether.

For example, as shown in figure 16, a pixel combined group can be made up of six pixels, and the pixel that is positioned at middle row on the vertical direction in nine pixels wherein shown in Figure 15 is removed.Equally, in this case, among color R, G and the B each, the center of gravity of pixel combined group uniformly-spaced separates.Therefore, can obtain to have the high-resolution and the image of ripple still less.

In addition, as shown in figure 17, a pixel combined group can only be made up of three pixels of horizontal direction arrangement, and two row in the triplex row of horizontal direction arrangement are got rid of.

As mentioned above, thus also can reduce pixel quantities that vertical direction arranges and further increase the signal output speed by getting rid of some row.The example of the method for the pixel quantity that the minimizing vertical direction is arranged comprises a kind of method, wherein, when from the photodiode read output signal electric charge that forms pixel during to vertical transfer parts 3, the signal charge that exists in the inessential row is continued to be stored in this photodiode and is not read out, and gets rid of the pixel that is arranged in the row that is not read out thus.In the case, the signal charge that is not read out can be discharged into substrate or analog from photodiode.

Figure 18 illustrates a kind of for realizing the example of the electrode structure that above-mentioned driving is adopted.In the electrode structure shown in Figure 18, each transmission electrode (common electrode) by six phase place V1 to V6 of the vertical transfer level of vertical transfer parts 3 forms.Yet described vertical final stage is different from other vertical transfer level on electrode structure.In other words, carry out the transmission operation for the vertical final stage that makes secondary series can be independent of the vertical final stage of other vertical transfer level and other row (i.e. first row and the 3rd row), third phase position and the 5th phase place are formed by the absolute electrode that is different from above-mentioned common electrode (VC1 and VC2).In addition, carry out the transmission operation in order to make tertial vertical final stage can be independent of other vertical transfer level with the vertical final stage of other row (i.e. first row and secondary series), third phase position and the 5th phase place are formed by the absolute electrode that is different from above-mentioned common electrode and secondary series absolute electrode (VC3 and VC4).The vertical final stage of first row is the same with other vertical transfer level, is formed by the common electrode of V1 to V6.

Adopt the kind electrode structure to make to be arranged in second of per three row can carry out the transmission operation separately independently with tertial vertical final stage.Therefore, the transmission operation shown in can execution graph 3 to 13.

Perhaps, as shown in figure 19, the vertical final stage of first row also can be made of the absolute electrode that is used for the 3rd and the 5th phase place (VC5 and VC6).When adopting this structure, at first only make first row transmit operation, can make all vertical transfer levels carry out the transmission of one-level then, rather than carry out the transmission operation simultaneously by all vertical transfer parts 3 in the state shown in Figure 7.

Being that vertical transfer parts 3 adopt in six situations about driving mutually, preferred, second with six electrodes that each vertical final stage of the 3rd row (or first to the 3rd row all) provides in, wherein two or three are absolute electrodes.The example of structure that adopts when three transmission electrodes that provide in the vertical final stage are absolute electrode is provided Figure 20 and 21.Whether these two or three absolute electrodes are adjacent to each other is inessential.Yet when considering production process, preferred, between two absolute electrodes, there is a common electrode at least.

Therefore, in six situations about driving mutually, for example, preferably, shown in each width of cloth of Figure 18 and 19, begin several from horizontal transport parts 4 one sides, being arranged in the second and the 4th electrode is absolute electrode, or shown in each width of cloth of Figure 20 and 21, begin severally from horizontal transport parts 4 one sides, being arranged in the second, the 4th and the 6th electrode is absolute electrode.Yet the electrode structure of vertical final stage is not limited to these concrete examples.

In the present embodiment, described as an example and be used for six electrode structures that drive mutually, but also can adopt three-phase or four to drive mutually.Yet under the situation that three-phase or four drives mutually, use two absolute electrodes.

Figure 22 illustrates the concrete example arrangement of the gate electrode that adopts in the electrode structure shown in Figure 18 and 19.Among Figure 22, each of transmission raceway groove 52 is formed on two raceway grooves and blocks between 51, as vertical transfer parts 3.In example shown in Figure 22, in the transmitting stage except that the vertical final stage of vertical transfer parts 3, three transmission electrode V2, V4 and V6 are formed by the electrode film that is arranged in one deck (ground floor electrode), as the common electrode of all row.In an identical manner, three transmission electrode V1, V3 and V5 are also formed by the electrode film that is arranged in the one deck (second layer electrode) that is arranged on the ground floor electrode, as the common electrode of all row.On the other hand, in described vertical final stage, the electrode film identical with the electrode film that is used for second layer electrode forms such pattern, wherein Gu Li part is separated from one another, and correspondence row are separately arranged, the transmission electrode of the 3rd and the 5th phase place (several when beginning from horizontal transport parts 4 one sides, as to come the second and the 4th electrode) forms absolute electrode φ V3A to φ V3C and φ V5A to φ V5C respectively thus.As shown in figure 18, when the vertical final stage of first row was not driven independently, the electrode φ V3A shown in Figure 22 can be connected respectively to the terminal that is connected with φ V5 with electrode φ V3 with φ V5A.

Gate electrode structure shown in Figure 22 describes as an example, and wherein said gate electrode is formed by ground floor or second layer transmission electrode.Yet as shown in figure 29, transmission electrode can be formed by first to the triple electrode film any one.In example shown in Figure 29, in the transmitting stage except that the vertical final stage of vertical transfer parts 3, three transmission electrode V2, V4 and V6 are formed by the electrode film that is arranged in one deck (ground floor electrode), respectively as the common electrode of all row.Similarly, three transmission electrode V1, V3 and V5 are also formed by the electrode film that is arranged in the one deck (second layer electrode) that is arranged on the described ground floor electrode, respectively as the common electrode of all row.On the other hand, in vertical final stage, transmission electrode V1, V3C, V5A and V5B are formed by the 3rd layer of transmission electrode, and transmission electrode V3A, V3B and V5C are formed by the transmission electrode that is arranged in the second layer, and transmission electrode V2, V4 and V6 are formed by the transmission electrode that is arranged in the ground floor.

By such structure, the transmission electrode (that is, beginning several electrodes of the second and the 4th of coming from horizontal transport means 4 one sides) that forms the 3rd and the 5th phase place forms absolute electrode φ V3A to φ V3C and φ V5A to φ V5C.As shown in figure 18, when the vertical final stage of first row was not driven independently, the electrode φ V3A shown in Figure 29 can be connected respectively to the terminal that is connected with φ V5 with electrode φ V3 with φ V5A.

In example shown in Figure 29, electrode V1, V3C, V5A and V5B are formed by the electrode film that is arranged in the 3rd layer, but the electrode film of each transmission electrode is not limited in this.In gate electrode structure shown in Figure 29, gate electrode can be formed by any one that is arranged in electrode film in first to the 3rd layer, but can not form with the electrode film of arranging in the 4th layer or any position layer thereon.In gate electrode structure shown in Figure 22, because transmission electrode can form in two-layer, the formation of this electrode film is simple relatively, but because the absolute electrode pattern for isolated part separated from one another, so need independent wiring that the absolute electrode of grid is connected to each other.On the contrary, when transmission electrode by being arranged in electrode film in the 3rd layer or thereon any layer when forming, owing to the absolute electrode of grid is connected to each other by an electrode film, so do not need independent wiring, this is an advantage.

With electrode structure shown in Figure 180 as an example, sequential chart shown in Figure 23 is represented the sequential from the control signal of each transmission electrode that will be applied to vertical transfer parts 3 and horizontal transport parts 4 of control unit (not shown), and corresponding to the state of the transmission charge of this sequential chart.Under the situation of kind electrode structure, as shown in figure 24, the signal charge of reading from photoelectric conversion part 2 is stored in transmission electrode V3 and the V4.

In Figure 23, when the high level of driving pulse be applied to separately electrode V1 to V6 and during VC1 to VC4, these electrodes are as memory unit, when the low level of driving pulse is applied on it, they are used as stop member simultaneously.

According to sequential chart shown in Figure 23,, can realize the pixel mixing that present embodiment is described by driving vertical transfer parts 3 and horizontal transport parts 4.As shown in figure 23, preferred, be made as the low level moment (t2) before at electrode φ V4, electrode φ V2 is made as high level (when the t1).

When electrode φ V2 when t1 is made as high level constantly, t1 constantly before the electrode of storage signal electric charge be φ V3 and φ V4, be φ V2, φ V3 (φ VC3) and φ V4 at t1 and t2 constantly, be φ V2 and φ V3 (φ VC3) at t2 and t3 between the moment.This provides an advantage, promptly signal charge be transferred to horizontal transport parts 4 during, avoided losing of the vertical transfer level signal charge that is not transmitted.

Figure 25 illustrates an example, in the vertical final stage of two row in three row that wherein are adjacent to each other, begin several from horizontal transport parts end, being positioned at the second and the 4th transmission electrode is absolute electrode, they are independent of the vertical final stage of other row, and in all vertical final stages of three row that are adjacent to each other, begin several transmission electrodes of the first, the 3rd and the 5th of being arranged in from horizontal transport parts end and be different from the transmission electrode of other grade of vertical transfer parts separately.Sequential chart shown in Figure 26 represents to be applied to the sequential of the control signal of each transmission electrode, and corresponding to the state of the transmission charge of this sequential chart.The difference of operation shown in Figure 26 and operation shown in Figure 23 is, when the electric charge of the first and second vertical final stages that are listed as optionally is transferred to horizontal CCD, only drive electrode VC1 to VC4, V2 ', V4 ' and V6 ' in the electrode that is provided in described vertical final stage, and and if only if tertial electric charge when optionally being transferred to horizontal CCD, pulse is applied to the electrode of the V1 to V6 that comprises that whole screen is shared, and transmission charge thus.Therefore, compare, can reduce power consumption with example of structure shown in Figure 23.In this connected, the electrode V2 ' that provides in the vertical final stage shown in Figure 25 can be identical with the electrode V2 of other grade of described vertical transfer parts.

Figure 27 is the curve chart that the horizontal space frequency response is shown.Among Figure 27, g1 is illustrated in and uses all pixels and the not frequency response under the situation of mixed pixel.The nyquist frequency F of both full-pixel is relevant with the sample frequency f of both full-pixel, and its relation is expressed by formula F=1/2 * f.When getting rid of methods such as pixel and sample, because being higher than the component of nyquist frequency 1/3F, frequency produces aliasing error, the DC component that is added to of the component at the 2/3F place with 1/3 of conventional frequency.In Figure 27, g2 represents the frequency response of acquisition when two pixels that are positioned at the right side and a left side in three horizontal pixels mix as above-mentioned patent document 1.In the case, because nyquist frequency is 1/3F, the component at the 2/3F place approximately is 0.25, and aliasing error is added to DC and produces and obscure.In Figure 27, g3 represents according to the present invention the frequency response of acquisition when three pixels of arranging every a pixel mix.Nyquist frequency is 1/3F, and the component at the 2/3F place is 0.Therefore, almost there is not the aliasing error DC that is added to.As shown in figure 27, described solid-state image sensing device 1 can obtain to have less ripple and the high-quality image signal of obscuring.

In the above-described embodiments, structure and the driving method that three pixels that horizontal direction is arranged mix described.It is odd number and greater than 3 pixel that yet the present invention can be used to mix three pixels or its quantity.According to the description of present embodiment, those skilled in the art will appreciate that the structure and the driving method that are used to mix five or more pixels.

In addition, the invention is not restricted to have the solid-state image sensing device of arranging filter as shown in Figure 1, it can also be used to have the solid-state image sensing device of the filter of multi-form formation.In addition, the present invention can also be used for not using the solid-state image sensing device of the monochrome image of colored filter.

When the solid-state image sensing device of describing in the present embodiment was used for digital camera, because data are exported at a high speed from solid-state image sensing device, therefore can obtain can high speed operation and the good digital camera of picture quality.Switch owing to can and read between the routine operation of all pixels, can obtain to have the digital camera of moving image (high speed operation) pattern and still image (reading the operation of all pixels) pattern at high speed operation of the present invention.Figure 28 illustrates according to digital camera example of structure of the present invention.This digital camera has: optical system 31 comprises being used for the incident ray from an object is focused on lens on the imaging plane of solid-state image sensing device 1; Control unit 32, the driving of control solid-state image sensing device 1; With image processor 33, carry out various signal processing for the signal of solid-state image sensing device 1 output.

In digital camera according to the present invention, when described solid-state image sensing device colored filter is not set and to horizontal direction on continuously arranged pixel when mixing, increase color can for the image that will obtain by using a dichronic mirror or other analog (so-called three template color cameras).And then, under the situation of three template color cameras, preferably, m is set to 2 (m=2), its operator scheme can be between at least two kinds of patterns be optionally switched, and these two kinds of patterns comprise first pattern of not carrying out mixed pixel and mix vertical direction two pixels adjacent one another are and second pattern of two pixels that horizontal direction is adjacent one another are.

Second embodiment

Following description is at the solid-state image sensing device according to second embodiment of the invention.

Basic identical according to the basic structure of the solid-state image sensing device of present embodiment with structure according to the solid-state image sensing device (seeing Figure 22) of first embodiment.Yet the difference of the solid image sensing device of the solid-state image sensing device of present embodiment and first embodiment is to drive the method for vertical transfer parts 3 and horizontal transport parts 4.

The solid-state image sensing device of present embodiment has such structure: wherein vertical final stage has and forms the transmission electrode that every m (m represents integer 2 or bigger integer) row just repeat same structure, be listed as and control the operation that signal charge is transferred to described horizontal transport parts 4 in order to be independent of other, in all vertical final stages of m row, provide to be independent of the transmission electrode that other is listed as the transmission electrode of vertical final stage.Adopt structure and the operation of the object lesson description of a m=3 below according to the solid-state image sensing device of present embodiment.When m=3, the structure of the solid-state image sensing device shown in Figure 22 of the structure of this solid-state image sensing device and first embodiment is identical.

Below with reference to the operation of Figure 30 to 47 description according to the solid-state image sensing device of present embodiment.In Figure 30 to 47,, and represent moving of described signal charge with this numbering for each signal charge that reads out to vertical transfer parts 3 is numbered.In figure such as Figure 30, only show 8 * 8 pixels.Yet, be interpreted as, contain the

numbering

18,28 ... with the right side of 88 row provide contain numbering 19,29 ... with 89 row, and further provide on its right side contain the numbering 110,210 ... with 810 row, follow then these row further provide on its right side contain numbering 111,211 ... with 811 row.

Figure 30 shows the state that the signal charge of reading from each pixel of photoelectric conversion part 2 transfers to vertical transfer parts 3.From this state, at first, the transmission electrode that only allowing to be arranged in the vertical final stage every the vertical transfer parts 3 of the row of two column distributions provides is carried out the transmission operation.Therefore, as shown in figure 31, in the signal charge of the vertical final stage of vertical transfer parts 3, the signal charges in the above-mentioned row that two row are arranged are transferred to horizontal transport parts 4.Next, shown in figure 32, the signal charge that in horizontal transport parts 4, exists forwards horizontal transport corresponding to the distance of a pixel.

And then as shown in figure 33, the transmission electrode that only allowing to be arranged in the vertical final stage of the vertical transfer parts 3 of the row (being different from the row of carrying out transmission shown in Figure 31) every two row places provides is carried out the transmission operation.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, above-mentioned signal charges in the row that two row are arranged are transferred to horizontal transport parts 4.By such transmission, the signal charge of two row in per three row mixes in horizontal transport parts 4.Next, as shown in figure 34, the signal charge that in horizontal transport parts 4, exists forwards horizontal transport corresponding to the distance of a pixel.

Next, as shown in figure 35, the transmission electrode that only allowing to be arranged in the vertical final stage of the vertical transfer parts 3 of row every two row places (being different from the row of carrying out transmission shown in Figure 31,33) provides is carried out the transmission operation.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, above-mentioned signal charges in the row that two row are arranged are transferred to horizontal transport parts 4.By above-mentioned transmission operation, as shown in figure 35, the signal charge of the vertical final stage of the vertical transfer parts 3 of each row mixes in horizontal transport parts 4 in three row.

Then, as shown in figure 36, all transmitting stages of vertical transfer parts 3 are carried out the operation of signal charge to vertical final stage vertical transfer one-level (one stage).

After this, to the signal charge (21 to 28) that is arranged in vertical final stage shown in Figure 36, to transmit and horizontal transport (Figure 37 to 41) with above-described identical step repeated vertical.Therefore, in horizontal transport parts 4, the signal charge of each row in three row is mixed together.

In addition, as shown in figure 42, all transmitting stages of vertical transfer parts 3 are carried out the operation of signal charge to vertical final stage vertical transfer one-level.To the signal charge (31 to 38) that is positioned at vertical final stage, to transmit and horizontal transport (Figure 42 to 47) with above-described identical step repeated vertical.Therefore, in horizontal transport parts 4, the signal charge of each row in three row is mixed together.

After this, three grades the signal charge that has mixed in horizontal transport parts 4 is as shown in figure 47 sequentially exported from horizontal transport parts 4.

As mentioned above, the solid-state image sensing device of present embodiment can be realized the mixing of three pixels.

In the present embodiment, described a such example, wherein each in three pixels adjacent one another are is mixed together in horizontal transport parts 4 on the horizontal direction.Yet, be not must be adjacent one another are with the pixel that is mixed together.For example, preferred when colored filter is provided, provide pixel to be mixed together with same color filter.On the other hand, do not have at solid-state image sensing device under the situation of colored filter, preferred, pixel adjacent one another are mixes, because can not cause the deterioration of spatial frequency characteristic in this case.

The example of m=3 is described in the present embodiment.Yet, those skilled in the art will readily understand that even under the situation of m=2 or m=4 or bigger number, vertical transfer and horizontal transport by repeating to arrange the signal charge of these row that are listed as in every m row can realize the mixing of m pixel.

In addition, for example, under the situation of m=6, promptly vertical final stage has and forms the isostructural transmission electrode of per 6 column weight complex phases, and 5 of 6 electrodes or all form and be independent of other row, be listed as and carry out the operation that signal charge is transferred to the horizontal transport parts thereby be independent of other.Deliver to the pattern of the control signal of vertical transfer parts 3 and horizontal transport parts 4 by change, available four quasi-modes are carried out this operation, that is, and and six pixel mixed modes, three pixel mixed modes, two pixel mixed modes and zero pixel mixed mode.Just, in theory, can arbitrarily realize the pattern of the quantity of pixel corresponding to the mixed pixel of any number of the unit (quantity) of a transmission electrode of aliquot, this transmission electrode has a kind of repetition same structure of the transmission electrode that is arranged in vertical final stage.

For example, described the pattern of a plurality of pixels of above-mentioned mixing, in this embodiment, colored filter has been set in the form with so-called Bayer array as shown in figure 48 with an example.In Figure 48, character R, G and B represent the color corresponding to the filter of each pixel setting.In the case, use wherein the m=12 solid-state image sensing device can realize nine pixel mixed modes and four pixel mixed modes, be that vertical final stage has and forms every the isostructural transmission electrode of 12 column weight complex phases, and 11 row or the transmission electrode of its all row in 12 row can be constructed to be independent of other row, are listed as and carry out the operation that signal charge is transferred to the horizontal transport parts thereby can be independent of other.Under nine pixel mixed modes, by mixing nine pixels of vertical direction in three levels that one-level is arranged, each nine pixels among color R, G and the B are mixed, and wherein each level of three levels has in the horizontal direction every a pixel and arranges three pixels.On the other hand, under four pixel mixed modes, by mixing four pixels of vertical direction in two levels that one-level is arranged, four pixels of each color among color R, G and the B are mixed, wherein in each level of two levels, have in the horizontal direction and arrange two pixels every a pixel.

Under the situation of Miao Shuing, the pixel that can carry out on the vertical direction in the vertical transfer level or in the horizontal transport parts is mixed in the above.

The 3rd execution mode

Following description relates generally to solid-state image sensing device according to still another embodiment of the invention.

The solid-state image sensing device of present embodiment has the structure identical with the solid-state image sensing device of second embodiment, still, is that with its difference the combination of the pixel that will mix changes step by step.

For the situation of m=2, its concrete operations are described with reference to Figure 49 to 57.In Figure 49 to 57, each signal charge that reads out to vertical transfer parts 3 is numbered, and mobile the numbering with this of signal charge represented.In Figure 49 and other figure, only show 8 * 8 pixels.Yet, be interpreted as, contain the

numbering

18,28 ... with the right side of 88 row provide contain numbering 19,29 ... with 89 row, and further provide on its right side contain numbering 110,210 ..., 810 row.

Figure 49 shows the state that the signal charge of reading from each pixel of photoelectric conversion part 2 transfers to vertical transfer sections 3.From this state, at first, in the transmission electrode in the vertical final stage of vertical transfer parts 3, the transmission electrode that only allows to provide in the even column is carried out the transmission operation, as shown in figure 50.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, those signal charges in the row that row are arranged are transferred to horizontal transport parts 4.Next, shown in Figure 51, the signal charge that in horizontal transport parts 4, exists forwards horizontal transport corresponding to the distance of a pixel.

Shown in Figure 52, in the transmission electrode in the vertical final stage of vertical transfer parts 3, the transmission electrode that only allows to be arranged at odd column is carried out the transmission operation.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, those signal charges in the row that row are arranged are transferred to horizontal transport parts 4.By this transmission operation, in horizontal transport parts 4, the signal charge in the vertical final stage of per two row is mixed together.

Below, shown in Figure 53, all transmitting stages of vertical transfer parts 3 are carried out the operation of signal charge to vertical final stage vertical transfer one-level.Subsequently, shown in Figure 54, the signal charge that in horizontal transport parts 4, exists forwards horizontal transport corresponding to the distance of a pixel.After this, shown in Figure 55, in the transmission electrode of the vertical final stage of vertical transfer parts 3, the transmission electrode that only allows to provide in the odd column is carried out the transmission operation.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, the signal charge of the row of arranging every row is transferred to horizontal transport parts 4.Next, shown in Figure 56, the signal charge that in horizontal transport parts 4, exists forwards horizontal transport corresponding to the distance of a pixel.Subsequently, shown in Figure 57, in the transmission electrode of the vertical final stage of vertical transfer parts 3, the transmission electrode that only allows to provide in the even column is carried out the transmission operation.Therefore, in the signal charge of the vertical final stage of vertical transfer parts 3, the signal charge of the row of arranging every row is transferred to horizontal transport parts 4.By this transmission operation,, the signal charge in the vertical final stage of per two row is mixed together in horizontal transport parts 4.

After this, repeat and those operation identical operations shown in Figure 49 to 57.

In the present embodiment, use this process, by combination number x1 and x2, numbering x3 and x4, numbering x5 and x6 and number x7 and x8 will be arranged in per two pixels in the odd level signal charge (in Figure 49 signal charge be numbered x1 to x8, wherein x is an odd number) mix.On the other hand, by combination number x2 and x3, numbering x4 and x5, numbering x6 and x7 with number x8 and signal charge (be numbered the signal charge of x1 to x8 in Figure 49, wherein x is an even number) that x9 will be arranged in per two pixels in the even level mixes.

Therefore, shown in the circle among Figure 58, the center of gravity of per two pixels that will be mixed together in the center of gravity of per two pixels that will be mixed together in the odd level and the even level is alternately arranged in proportion.In this way, the center of gravity of the pixel groups that will mix uniformly-spaced separates in the horizontal direction.This just provides such advantage: improved visible resolution and therefore can obtain more distinct image.

As in according to the solid-state image sensing device of first embodiment, when the solid-state image sensing device (seeing Figure 28) that in digital camera, adopts respectively according to the second and the 3rd embodiment, can be from the solid-state image sensing device high speed dateout that adopts therein.Therefore, can obtain can high speed operation and the good digital camera of picture quality.In addition, when adopting described solid-state image sensing device, can and read between the normal running of all pixels at high speed operation according to the present invention and switch.Therefore, can obtain the digital camera that not only has mobile image (high speed operation) pattern but also have rest image (reading the operation of all pixels) pattern.

Also can be preferably, employing is made digital camera according to any one of the solid-state image sensing device of first to the 3rd embodiment, and this solid-state image sensing device allows it not carry out the pattern that pixel mixes in all pixel signal charge of output and carry out between the pattern that four pixels mix and switch.For example, such digital camera can be with HDTV moving image mode (1000 pixels of vertical arrangement * 2000 horizontal pixels) with SDTV moving image mode (500 pixels of vertical arrangement * 1000 horizontal pixels) output image, the HDTV moving image mode is as the pattern that does not relate to the pixel mixing, and the SDTV moving image mode is to carry out the pattern that four pixels are mixed.Under the HDTV moving image mode, can export high-resolution image, and under the SDTV moving image mode, can export the image of high sensitivity and high frame per second.

In addition, manufacturing has the solid-state image sensing device of about at least 8,000,000 pixels, more specifically, solid image sensing device with at least 2160 pixels and horizontal at least 3840 pixels of vertical arrangement, so that their pattern can selectively be switched between at least two kinds of patterns, these two kinds of patterns comprise: the imaging pattern that is used for the TV form of 720 scan lines that provide by 9 pixels of mixing (three pixels of vertical arrangement) * (three horizontal pixels) is provided and the imaging pattern that is used for the TV form of 1080 scan lines that provide by 4 pixels of mixing (2 pixels of vertical arrangement) * (2 horizontal pixels) is provided.Making it to have between the pattern of high-definition picture and the pattern that output has high sensitivity and high frame rate image an output like this switches.

In addition, when imaging pattern that 16 pixels that adopt (4 pixels of vertical arrangement) * (4 horizontal pixels) mix, can realize that number of scanning lines is that 480 NTSC system or number of scanning lines are the imaging pattern of 575 PAL system.

Such digital camera can have the structure that comprises the solid-state image sensing device that is provided with colored filter, or but so-called three template cameras, do not have colored filter in the solid image sensing device that three template cameras comprise, coloured image is by using a dichronic mirror that the light beam that light is separated into different colours is obtained.As previously mentioned, preferred when solid-state image sensing device is provided with colored filter, provide the pixel of the identical filter of color to mix.On the other hand, under the situation of three template cameras, preferred, a plurality of pixels adjacent one another are mix.

Industrial applicability

The present invention can be used for solid-state image sensing device, by reducing the quantity of the pixel of arranging in the horizontal direction at least, and the picture signal that this solid-state image sensing device can the high speed outputting high quality and can not produce ripple or obscure.

Claims

1, solid-state image sensing device comprises:

The vertical transfer parts that provide corresponding to each row of the pixel of two-dimensional arrangements, the signal charge of reading from described pixel with vertical transfer; And

The horizontal transport parts are used for the signal charge that horizontal transport is received from described vertical transfer parts,

Wherein said vertical transfer parts comprise a plurality of transmitting stages, and the position is vertical final stage from the nearest transmitting stage of described horizontal transport parts, and described vertical final stage has the transmission electrode that every m (m represent 2 or bigger integer) row just repeat same structure, and

All vertical final stages of the vertical final stage of the row in the m row the row or m row respectively are provided with a transmission electrode, this transmission electrode is independent of the transmission electrode of other the vertical final stage in this m row, controls operation from associated vertical final stage transmission signals electric charge to the horizontal transport parts thereby be independent of described other vertical final stage.

2, solid-state image sensing device according to claim 1, wherein said integer m are 2n+1 (n represent 1 or bigger integer).

3, solid-state image sensing device according to claim 2 is superimposed in described horizontal transport parts comprising the signal charge of pixel in each group of the first and second pixel combined group,

Wherein the individual pixel of the 2n+1 that arranged every pixel by horizontal direction of each first pixel combined group (n represent 1 or bigger integer) is formed, and

Each second pixel combined group is by arranging every pixel and being that pixel except that the first pixel combined group is formed, and the pixel center of gravity of each second pixel combined group is positioned at equal the locating of pixel centroidal distance from two first adjacent pixel combined group.

4, solid-state image sensing device according to claim 3, wherein for each of the first and second pixel combined group that exist in the described vertical final stage,

(a1) in each pixel combined group only the signal charge from described horizontal transport parts output pixel farthest be transferred to the horizontal transport parts from vertical final stage, each pixel combined group is made up of 2n+1 pixel,

(a2) signal charge that exists in the described horizontal transport parts transmits the distance corresponding to two pixels forward,

(a3) in each pixel combined group, only in vertical final stage, have the dried up signal charge of flating pass defeated parts output pixel farthest of residual signal electric charge and position and be transferred to the horizontal transport parts from vertical final stage, each pixel combined group is made up of 2n+1 pixel, and

(a4) repeat transmission operation a2 and a3, the signal charge of the pixel combined group of being made up of 2n+1 pixel up to all each is transferred to the horizontal transport parts from vertical final stage.

5, solid-state image sensing device according to claim 4, wherein further

(b1) as the last operation that transmits operation a1 to a4, the signal charge of the last pixel that each pixel combined group comprises after described vertical final stage is transferred to described horizontal transport parts or with its simultaneously, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately, described each pixel combined group is made up of 2n+1 pixel

(b2) for the signal charge that is transferred to vertical final stage by transmission operation b1, carry out described transmission operation a1 to a4, and

(b3) repeat transmission operation b1 and b2, the signal charge that comprises in the 2n+1 level is transferred to described horizontal transport parts.

6, solid-state image sensing device according to claim 2, wherein the position has the transmission electrode that per three row just repeat identical structure from the vertical final stage of the nearest vertical transfer parts of described horizontal transport parts, and

Begin several from the output of described horizontal transport parts, at least the second is provided with a transmission electrode with each of tertial vertical final stage in described three row, this transmission electrode is independent of the transmission electrode of other vertical final stage, thereby irrespectively controls operation from separately associated vertical final stage transmission signals electric charge to described horizontal transport parts with described other vertical final stage.

7, solid-state image sensing device according to claim 6, wherein the vertical final stage that begins the first several row from the output of described horizontal transport parts have with remove the described first vertical final stage that is listed as grade identical electrode structure.

8, solid-state image sensing device according to claim 6, wherein each first pixel combined group is made up of every three pixels of a pixel arrangement horizontal direction, and

Each second pixel combined group by arrange every pixel and be that three pixels except that the first pixel combined group are formed, the pixel center of gravity of each second pixel combined group lays respectively at equal the locating of pixel centroidal distance from two first adjacent pixel combined group.

9, solid-state image sensing device according to claim 6, wherein

(c1) begin severally from the output of described horizontal transport parts, have only the signal charge of the vertical final stage of secondary series to be transferred to described horizontal transport parts in described three row,

(c2) signal charge that exists in the described horizontal transport parts transmits the distance corresponding to two pixels forward,

(c3) begin severally from the output of described horizontal transport parts, have only the signal charge of tertial vertical final stage to be transferred to described horizontal transport parts in described three row,

(c4) signal charge that exists in the described horizontal transport parts transmits the distance corresponding to two pixels forward, and

(c5) begin severally from the output of described horizontal transport parts, the signal charge of the vertical final stage of first row is transferred to described horizontal transport parts in described three row.

10, solid-state image sensing device according to claim 9, wherein

(d1) after the signal charge of the vertical final stage of first row being transferred to described horizontal transport parts by transmission operation c5 or with its while, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately,

(d2) for the signal charge that when transmission operation d1 finishes, is transferred to vertical final stage, carry out transmission operation c1 to c5, and after the signal charge of the vertical final stage of first row being transferred to described horizontal transport parts by transmission operation c5 or with its while, the signal charge that exists in the vertical transfer parts of all row is transferred to next stage separately, and

(d3) signal charge that is transferred to vertical final stage when transmission operation d2 finishes is carried out transmission operation c1 to c5.

11, solid-state image sensing device according to claim 3, wherein

A pixel combined group is made up of (2n+1) * (2n+1) the individual pixel in the first or second pixel combined group, each of first, second pixel combined group comprises 2n+1 the pixel that 2n+1 that vertical direction arranges in every line exists in capable, and the signal charge of the described 2n+1 of the every row pixel of arranging in capable is superimposed in vertical transfer parts separately.

12, solid-state image sensing device according to claim 11,9 pixels in the triplex row that a wherein said pixel combined group is arranged in every line by vertical direction are formed, and each row in the described triplex row comprises three pixels that horizontal direction is arranged every a pixel.

13, solid-state image sensing device according to claim 3, one of them pixel combined group is made up of 6 pixels that are arranged in two row, described in vertical direction two exist triplex row in the ranks, and each row in described two row comprises three pixels of arranging every a pixel on the horizontal direction.

14, solid-state image sensing device according to claim 3, one of them pixel combined group is made up of three pixels of arranging every a pixel on the horizontal direction of the delegation of every triplex row distribution on the vertical direction.

15, solid-state image sensing device according to claim 2, wherein the pixel of two-dimensional arrangements is provided with the colored filter through arranging, and makes 4 pixels of (2 horizontal pixels) * (2 pixels of vertical arrangement) form a unit.

16, solid-state image sensing device according to claim 15, wherein arrange colored filter, so that first colored filter offers 2 pixels that are positioned in described 4 pixels on the diagonal, and the second and the 3rd colored filter offers other 2 pixels respectively.

17, solid-state image sensing device according to claim 3, wherein the pixel of two-dimensional arrangements is provided with the colored filter through arranging, make 8 pixels of (2 horizontal pixels) * (4 pixels of vertical arrangement) form a unit, and in described vertical transfer parts, mix in 2 pixels that vertical direction is adjacent to each other.

18, solid-state image sensing device according to claim 6, wherein every row vertical final stage is formed by 6 transmission electrodes, and

In all vertical transfer parts of three row that are adjacent to each other, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second and the 4th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and to be positioned at the first, the 3rd, the 5th and the 6th transmission electrode be the shared electrode of other grade of vertical transfer parts separately.

19, solid-state image sensing device according to claim 6, wherein every row vertical final stage is formed by 6 transmission electrodes, and

In the vertical transfer parts of two row in three row adjacent one another are, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second and the 4th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and be positioned at the first, the 3rd, the 5th and the 6th transmission electrode and be and the shared electrode of other grade of vertical transfer parts separately, and

In the vertical transfer parts of residues one row of three row adjacent one another are, being positioned at all 6 transmission electrodes of first to the 6th all is the electrode shared with other grade of associated vertical transmission part.

20, solid-state image sensing device according to claim 6, wherein every row vertical final stage is formed by 6 transmission electrodes, and

In all vertical transfer parts of three row adjacent one another are, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second, the 4th and the 6th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and are positioned at the first, the 3rd and the 5th transmission electrode and are and the shared electrode of other grade of vertical transfer parts separately.

21, solid-state image sensing device according to claim 6, wherein every row vertical final stage is formed by 6 transmission electrodes,

In the vertical transfer parts of two row in three row adjacent one another are, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second, the 4th and the 6th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and be positioned at the first, the 3rd and the 5th transmission electrode and be and the shared electrode of other grade of vertical transfer parts separately, and

22, solid-state image sensing device according to claim 6, wherein the vertical final stage of every row is formed by 6 transmission electrodes, and

In three adjacent column at least two row the vertical transfer parts in, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second and the 4th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and in the vertical transfer parts of all three row adjacent one another are, begin severally from the described end of described horizontal transport parts, be arranged in the electrode that the first and the 3rd transmission electrode is different to be provided at other grade of vertical transfer parts separately.

23, solid-state image sensing device according to claim 6, wherein every row vertical final stage is formed by 6 transmission electrodes, and

In three row adjacent one another are in the vertical transfer parts of at least two row, in described 6 transmission electrodes, begin several from an end of described horizontal transport parts, being positioned at the second, the 4th and the 6th transmission electrode is absolute electrode, they are independent of the transmission electrode of the vertical final stage of other row, and in the vertical transfer parts of all whole three row adjacent one another are, begin severally from the described end of described horizontal transport parts, be arranged in the electrode that the first, the 3rd and the 5th transmission electrode is different to be provided at other grade of vertical transfer parts separately.

24, solid-state image sensing device according to claim 1, each level of wherein said vertical transfer parts is formed by 6 transmission electrodes, and in the transmitting stage except that the vertical final stage of each vertical transfer parts, begin several from an end of described horizontal transport parts, be positioned at second, each electrode film by ground floor of the 4th and the 6th transmission electrode forms and is used as the shared electrode of all row, and begin several from the described end of described horizontal transport parts, be positioned at first, each electrode film by the second layer of the 3rd and the 5th transmission electrode forms and is used as the shared electrode of all row, the described second layer is formed in the upper layer of ground floor top, and

In vertical final stage separately, as absolute electrode, from the described end of described horizontal transport parts begin several be positioned at second with the 4th electrode each is formed by the electrode film identical with the electrode film of the second layer, and be divided into the correspondence isolated part of column distribution separately.

25, solid-state image sensing device according to claim 1, wherein

Described vertical transfer parts have triple electrode film at least, and

The transmission electrode that being independent of the transmission electrode of the vertical final stage of other row provides is formed by the one deck at least in a plurality of electrode retes that comprise top layer.

26, solid-state image sensing device according to claim 1, wherein

(e1) quantity of choosing from a horizontal m pixel is transferred to described horizontal transport parts at 1 signal charge to the pixel (m-1),

(e2) signal charge that exists in the described horizontal transport parts transfers to few distance corresponding to a pixel forward or backward, and

(e3) repeat transmission operation e1 and e2, thereby all signal charges of m pixel are transferred to described horizontal transport parts.

27, solid-state image sensing device according to claim 26, wherein

(e4) after transmission operation e3, the signal charge of all row transmits one-level to described horizontal transport parts,

(e5) signal charge that is transferred to described vertical final stage by transmission operation e4 is transmitted operation e1 to e3, and

Repeat transmission operation e4 and e5, thus all signal charges that comprise in the m level are transferred to described horizontal transport parts.

28, solid-state image sensing device according to claim 1, wherein can between two kinds of patterns, optionally switch its operator scheme at least, these two kinds of patterns comprise, a kind ofly drive the pattern that transmission electrode mixes a horizontal m pixel by being independent of other row, in the row row in the m row or the vertical final stage of all row, the described transmission electrode of the transmission electrode that is independent of other row is provided, and a kind of by being listed as the pattern that identical mode drives transmission electrode and do not carry out the pixel mixing with other.

29, solid-state image sensing device according to claim 1, wherein integer m represents the common multiple of m1 (m1 represent 2 or bigger integer) and m2 (m2 represent 2 or bigger integer), and its operator scheme can optionally be switched between two kinds of patterns at least, and these two kinds of patterns comprise the pattern of m1 the pixel that mixed-level is arranged and the pattern of m2 the pixel that mixed-level is arranged.

30, solid-state image sensing device according to claim 29, the colored filter that further comprises three kinds of colors of arranging with repeat pattern, wherein in described colored filter, the colored filter vertical arrangement of two kinds of colors in three kinds of colors, and the colored filter of two kinds of colors in three kinds of colors is horizontal

Wherein can be between at least two kinds of patterns switching operation modes optionally, these two kinds of patterns comprise the pattern of m1 the pixel that mixed-level is arranged and the pattern of m2 the pixel that mixed-level is arranged, and m1 pixel and m2 pixel are respectively arranged with a kind of filter in three kinds of colors with colored filter simultaneously.

31, solid-state image sensing device according to claim 29, the colored filter that further comprises three kinds of colors of arranging with repeat pattern, wherein in described colored filter, the colored filter vertical arrangement of two kinds of colors in three kinds of colors, and the colored filter of two kinds of colors is horizontal in three kinds of colors

Wherein can be between at least two kinds of patterns switching operation modes optionally, these two kinds of patterns are selected from: the pattern of 3 pixels that the pattern of 2 pixels that mixed-level is arranged, mixed-level are arranged, the pattern of 4 pixels of arranging with mixed-level, wherein said 2,3 and 4 pixels are respectively arranged with a kind of filter in three kinds of colors with colored filter.

32, solid-state image sensing device according to claim 29 comprises further that wherein the pattern of mixed pixel is not used as operator scheme.

33, solid-state image sensing device according to claim 26, wherein m pixel arranged in the horizontal direction continuously.

34, solid-state image sensing device according to claim 26, the combination that wherein is arranged in m pixel of horizontal direction changes step by step.

35, solid-state image sensing device according to claim 34, wherein in two-stage at least adjacent one another are, the center of gravity of the m of a combination pixel equally spaced separates in the horizontal direction.

36, a kind of camera comprises solid-state image sensing device according to claim 1.

37, a kind of three template cameras comprise solid-state image sensing device according to claim 33.

38, according to the described three template cameras of claim 37, wherein m is made as 2, at least can be between two kinds of patterns switching operation modes optionally, these two kinds of patterns comprise first pattern of mixed pixel not and mix vertical direction two pixels adjacent one another are and second pattern of two pixels that horizontal direction is adjacent one another are.