CN1691247A - Electronic source and its producing method and image forming device with the same electronic source - Google Patents
Electronic source and its producing method and image forming device with the same electronic source Download PDFInfo
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- CN1691247A CN1691247A CN 200410097866 CN200410097866A CN1691247A CN 1691247 A CN1691247 A CN 1691247A CN 200410097866 CN200410097866 CN 200410097866 CN 200410097866 A CN200410097866 A CN 200410097866A CN 1691247 A CN1691247 A CN 1691247A
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Abstract
The present invention relates to a method for making the electron source which is provided with a plurality of surface conduction electronic emitters that are connected with a plurality of connecting lines on one substrate, the method is characterized in that the method comprises the following procedures: providing electric power to a plurality of conductive films (64 and 271) which are connected to each connecting wire (352; 362 and 393) in a plurality of connecting wires (65, 66; 272 and 273) from the electrically connecting parts (354; 377, 378, 395 and 397) that contact each connecting wire (352; 362 and 393) at a plurality of positions of each connecting wire (352; 362 and 393).
Description
The application is that the name submitted on February 13rd, 1999 is called the dividing an application of No. the 99102209.2nd, patent application of " electron source and manufacture method thereof and the image processing system that uses described electron source ".
The present invention relates to the image processing system in a kind of electron source, applying electronic source and the method for making this electron source.
As everyone knows, the electron source that has two types is as electron emission device, that is: thermionic ion source and cold-cathode electron source.The example of cold-cathode electron source is field emission type (hereinafter to be referred as " FE ") electron emission device, metal/insulator/metal mold (to call " MIM " in the following text) electronic emitter and surface conductive emission type (hereinafter to be referred as " SCE ") electron emission device.W.P.Dyke and W.W.Dolan are at " progress of electronics physics " magazine (Advance in Electron Physics, 8,89 (1956)) in the article " field emission " (" Field emission ") and C.A.Spinot at " applicating physical magazine " (J.Appl.Phys., the example of FE type has been described article 47,5248 (1976)) " physical characteristic that has the thin film field-emission cathode of molybdenum cone " " Physical properties of thin-film fieldemission cathodes with molybdenum cones ").
The known example of mim type is described in the literary composition of " tunnel-emission amplifier " (" The tunnel-emission amplifier ", J.Appl.Phys., 32,616 (1961)) by C.A.Mead.
M.I.Elinson has described the example of known SCE type electronics emission in the book of " radio engineering electron physics " (Radio Eng.Electron Phys., 10 (1965)).
Such phenomenon is used in SCE type electronics emission: flow through the electric current that is parallel to the film surface on the on-chip small size film and cause the electronics emission being formed on.
Each example of this surface conductive electron emission device is reported to some extent.The SnO that is reported in according to above-mentioned Elinson
2Realize it being an example wherein on the film." thin solid film " (" Thin Solid Films ") 9,317 (1972)), In other examples are with Au film (G.Dittmer:
2O
3/ SnO
2Film (M.Hartwell and C.G.Fonstad " IEEE T rans.E.D.Conf. " 519 (1975)) and carbon film (HisashiAraki etc.″Vacuum″，Vol.26，No.1，P.22(1983))。
Fig. 1 is represented is structure according to the device of above-mentioned M.Hartwell.This device is typical surface conductive electron emission device, as shown in Figure 1, the 1st, insulating substrate.The 2nd, the film of formation electron emission part.Film 2 is that splatter forms " H " shape metal-oxide film.Electron emission part 3 is to form with the charging process of following being called " electrical reset ", the 4th, comprise the film of electron emission part 3.In addition, the interval L1 between the device electrode is set at 0.5～1mm, and W is set at 0.1mm.Should be noted that, because the position and the shape of electron emission part 3 all are unknown, so this only is signal.
In these common surface conductive electron emission devices, generally all be before carrying out the electronics emission, with charging process formation electron emission part 3 on the film 2 that forms electron emission part of so-called " electrical reset ".According to this " electrical reset " process; the voltage (as: magnitude that per minute is 1 volt) of direct voltage or very slowly rising laterally is added on the film 2 that forms electron emission part; thereby make film 2 destroy, be out of shape or change its performance partly, so just formed the high electron emission part 3 of resistance.Electron emission part 3 makes the film 2 that forms electron emission part partly rupture.Electronics just emits from the near zone of fracture.The film 2 that comprises the formation electron emission part of the electron emission part that produces with the electrical reset process should be called the film 4 that comprises electron emission part.In living through the surface conductive electron emission device of above-mentioned electrical reset process, voltage is added on the film 4 that comprises electron emission part, make electric current flow through device, electronics just emits from electron emission part 3 so.In actual applications, run into variety of issue in these common surface conductive electron emission devices.But by to following improved abundant research, the applicant has solved these practical problems.
Because the manufacturing simple in structure, easy of aforesaid surface conductive electron emission device is so its advantage is to want and can line up a large amount of devices on big surf zone.Therefore, the various application that demonstrate fully this characteristics have been worked out.For example: the electron beam source that can mention and display unit.An example as device, a large amount of surface conductive electron emission devices is formed the matrix that is called electron source, wherein the surface conductive electron emission device is arranged in parallel (being called " ladder shape " matrix) and all uses lead (also claiming common lead) to couple together and constitute row, a large amount of row formation matrixes (for example :) referring to the applicant's Japanese publication JP1031332 the two ends of individual devices.In addition, in the image processing system as the display unit, be used for substituting cathode ray tube (CRT) at present at large with the flat display of liquid crystal.Yet, because this display they oneself is not luminous, so the problem of existence is that they need background illumination.Therefore need a kind of self luminous such display unit of exploitation.By electron source and the compound image processing system that constitutes display unit of fluorophor, both made this device have very big screen, also make than being easier to, its electron source is the array that exhibiting high surface conduction electron ballistic device is formed, and the fluorophor response produces visible light by the electron source electrons emitted.This device be a kind of can self luminous display unit, and have fabulous display quality (as: referring to the U.S. Pat 5,066,883 that the applicant obtained).
Yet, having in the above-mentioned electron source of the exhibiting high surface conduction electron ballistic device of on substrate, arranging, use in the manufacture method of image processing system of this electron source, there are the following problems in the particularly aforesaid electrical reset process:
In this image processing system, for the quantity that obtains the needed electron emission device of high-quality picture just very big.When making electron emission device, in the used electrical reset process, a large amount of surface conductive electron emission devices is coupled together, and flow through that to be used for the electric current of the lead (aforesaid common lead) of powering for each device from additional power source very big.This can produce following shortcoming:
(1) voltage drop that produces owing to the resistance of common lead makes the voltage that is added on each device produce a gradient, thereby the voltage that is added in the electrical reset process on the device produces difference.Therefore, formed electron emission part also changes, and makes Devices Characteristics become inconsistent.
(2) because the electrical reset process is undertaken by charging, promptly use common lead to flow through electric current, the power consumption on lead-in wire dissipates with form of heat owing to charge so, and produces Temperature Distribution on substrate.This can influence the distribution of the device temperature of every part, and formed electron emission part is changed.Therefore cause each device property different mutually.
(3) because the method that passes to electric current with lead-in wire forms electron emission part, because charging makes power in the lead with the form dissipation of heat, substrate will stand fire damage and shock proof intensity has reduced.
Though under the situation of the ladder shape structure of a plurality of electron emission devices on the substrate, these problems all are described, yet as hereinafter described, these problems also can occur under the situation of simple matrix structure.
The problems referred to above (1) will be in conjunction with Fig. 3 A, B, and C and Fig. 4 A, B, C is described in further detail.In these figure, A is the equivalent circuit diagram that comprises electron emission device, lead resistance and power supply, B is the figure of the current potential of each device hot side of expression and low potential side, and C is height and the voltage difference between the low potential side, the i.e. figure of added device voltage of each device of expression.
Fig. 3 A represents N electron emission device D in parallel
1～D
NBy lead-in wire port T+, the circuit that T-is connected with power supply VE.Power supply and device D
1Connect, and the earth terminal of power supply is received device D
NAs shown in the figure, the be connected in parallel common lead of device comprises resistive element r between the device that adjoins mutually.(in image processing system, arrange as pitches such as the pixel of electron beam target all are usually.Correspondingly, electron emission device is also equally spaced arranged.As long as the width and the thickness of lead-in wire do not change during fabrication, the lead-in wire of interface unit just has the resistance value that approximately equates between device so.)
Further suppose electron emission device D
1～D
NHas resistance value Rd about equally.
Under the situation of the sort of circuit shown in Fig. 3 A, as from the appreciable device (D of Fig. 3 C the closer to two ends
1And D
N) added voltage is high more, near the added voltage of the device the center is minimum.
Fig. 4 A, B, the situation of C is that of being connected device array in parallel of the negative electrodes of power supply (is device D among Fig. 4 A
1A side).Shown in Fig. 4 C, the closer to device D
1, the voltage that is added on each device is big more.
As indicated in above-mentioned two examples, total N, the device resistance Rd that the alive difference degree of institute depends on device in parallel from a device to another device is to the ratio R d/r of lead resistance r or the position of power supply connection.But usually, the N value is big more and the Rd/r value is more little, and difference is just remarkable more.In addition, Fig. 4 A, B, the method for attachment among the C causes pressurizeing change in voltage on the device greater than Fig. 3 A, B, the change in voltage that method of attachment produced shown in the C.In addition, though simple matrix shown in Figure 5 lead-in wire mode is different from above-mentioned two examples, yet because at lead resistance R
xAnd R
yLast generation voltage drop also can make each device institute making alive difference to some extent.Under the situation that a plurality of devices connect with common lead, each device institute making alive all can have difference, unless lead resistance is done to such an extent that compare enough little with device resistance Rd.
The inventor discloses following abundant result of study, be exactly specifically: in the process of the electron emission part that forms electron emission device, carry out under the situation of electrical reset, if the shape of device is identical, if promptly form material and the thickness and the W of film 2 of the electron emission part of Fig. 1, L is identical, so, electrical reset is just carried out under identical voltage or power.Voltage or power that device is refered in particular to are called device electrical reset voltage or power V
FormOr P
FormWhen attempting handle than V
FormOr P
FormMuch higher voltage or power are added to when carrying out the electrical reset process on the device, and serious deformation will take place the electron emission part of device, and the also serious deterioration of electron emission characteristic.If institute's making alive or power are less than V
FormOr P
Form, just can not form electron emission part, this is self-evident.
On the other hand, provide voltage simultaneously a plurality of devices that connect with common lead to be carried out under the situation of electrical reset from additional power source through common lead, because it is alive unbalanced that institute takes place on each device the voltage drop meeting on the lead-in wire, and can surpass electrical reset voltage V at the voltage or the power that are added on the device
FormOr electrical reset power P
FormSituation under make device.Can know qualitatively that the electron emission part of these devices degenerates, the electron emission characteristic of a plurality of devices has very big difference simultaneously.To do quantitative discussion among the following embodiment.
Therefore, add the difference of device voltage in order in the electrical reset process, to avoid, just must be connecting a plurality of devices and making low-resistance lead-in wire to the common lead that their introduce electrical power.Along with the increase of the number that is connected to the device on the common lead, to the lead-in wire this require even more important.This has just greatly limited the degree of freedom made from design electron source and image processing system, has also limited the degree of freedom of manufacture process simultaneously.The cost higher position of device is a result.
One side will describe (2) and (3) above-mentioned individual problem in detail.
In the process of electrical reset, in device, form electron emission part with the method that flows through electric current.But,, follow and the problem of life is exactly the temperature rise of substrate because this electric process that adds wants consumed power in common lead He in the device, and will convert joule's heat energy to.Simultaneously, the distortion of the electron emission part of formation device is responsive to Temperature Influence.Therefore, the variation of substrate temperature and fluctuation are influential to the electron emission characteristic of device.Particularly in electron source that is provided with a plurality of devices and image processing system, follow the problem of carrying out the increase of electrical reset device count simultaneously and producing even compare the variation that takes place owing to the voltage drop in the common lead more serious.For example: centre and position, edge owing to heat up at the substrate that dispels the heat produce Temperature Distribution.The temperature in centre rises and is higher than the temperature at position, edge, and electron emission characteristic produces difference.Consequently when making image processing system, the difference of the electron emission characteristic of device can cause various troubles, as difference in brightness.This can cause image quality decrease.
Simultaneously, the heat that is produced can make substrate stand thermal shock and distortion.In constituting the image processing system of evacuator, must bear device utilization that this will cause relevant this full problem under the situation of glass bulb of atmospheric pressure, as: fracture.
Except that above-mentioned problem, also following difficulty can appear:
(1) quantity of the device that can connect with common lead is restricted basically.
(2) in order to reduce lead resistance, must adopt quite expensive material, as: golden or silver-colored.This has just improved raw-material expense.
(3), need to form thick lead-in wire electrode in order to reduce lead resistance.This has just prolonged manufacture process, needed time of the forming process of electrode and pattern just, and raised the cost of relevant devices and equipment.
Therefore, the purpose of this invention is to provide a kind of image processing system that has the electron source of uniform electronic emission characteristics and have high picture quality.
According to the present invention, realize above-mentioned purpose by the method that provides manufacturing to have the electron source that is arranged in on-chip a plurality of surface conductive electron emission devices, the step that wherein forms the electron emission part of surface conductive electron emission device has a plurality of surface conductive electron emission devices is divided into many groups, and makes them stand charging that electrical reset the handles step of energizing.
In addition, be arranged on the substrate and realize above-mentioned purpose with the method for the electron source of a plurality of surface conductive electron emission devices of lead-in wire connection by providing to make to have, the charging that provides electrical power to carry out from the arrangements of electric connection that the is used for contact lead-wire step of energizing is provided the step that wherein forms the electron emission part of surface conductive electron emission device.
Further, by providing the method for making electron source to realize above-mentioned purpose with a plurality of surface conductive electron emission devices that are arranged on the substrate and connect with lead, the step that wherein forms the electron emission part of surface conductive electron emission device comprises by lead-in wire electrical power is provided to charging that each device the carries out step of energizing, this charging step of energizing has a step of carrying out control, and making the power or the voltage that are added on each device all is constant concerning whole devices.
Further, have the electron source that is arranged in on-chip a plurality of surface conductive electron emission devices and realize above-mentioned purpose by providing, this electron source is that according to the method described above any manufacture method is made.
Further, by being provided, the image processing system with electron source and image formation component realizes above-mentioned purpose, this electron source has a plurality of on-chip surface conductive electron emission devices that are arranged in, this image formation component is used for electron beam with electron source and shines and form image, makes this electron source with any manufacture method according to the method described above.
Other characteristics of the present invention and advantage can be clearer from the description of carrying out below in conjunction with accompanying drawing, all in the accompanying drawings same or similarly part with the same label mark.
Fig. 1 is the schematic diagram of the surface conductive electron emission device of explanation prior art;
The basic block diagram of Fig. 2 vertical-type surface conductive of the present invention electron emission device;
Fig. 3 A～3C is the key diagram that is used for describing the problem that an example according to prior art occurs in the electrical reset process;
Fig. 4 A～4C is the key diagram that is used for describing the problem that another example according to prior art occurs in common electrical is energized process;
Fig. 5 is the figure of the example of explanation simple matrix lead-in wire;
Fig. 6 A, 6B are the principle schematic according to surface conductive electron emission device of the present invention;
Fig. 7 A～7C is the basic process of surface conductive electron emission device is made in expression according to the present invention figure;
Fig. 8 is the oscillogram of explanation according to an example of electrical reset voltage in the surface conductive electron emission device of the present invention;
Fig. 9 is the block diagram of the equipment of test surface conductive electron emission device of the present invention;
Figure 10 is the figure of an example of explanation surface conductive electron emission device characteristic of the present invention;
Figure 11 represents the figure with an example of the circuit of matrix shape arrangement electron source according to the present invention;
Figure 12 is an equivalent circuit diagram of arranging the circuit of electron source according to the present invention with matrix shape;
Figure 13 is the be expert at equivalent circuit diagram of the state that electrical reset occurs constantly of expression;
Figure 14 is expert at n device to be carried out electrical reset equivalent circuit diagram constantly in the electrical reset;
Figure 15 is the electrical reset alive distribution map of each device constantly of being expert at;
Figure 16 A～16C is electrical reset equivalent electric circuit and the alive distribution map of each device constantly of describing the device that connects by ladder shape;
Figure 17 A～17B is that explanation is by carrying out electricity with the state diagram of energizing from an effluent overcurrent;
Figure 18 describes the figure that carries out electrical reset according to the present invention along the direction of row and column;
Figure 19 A～19C is the figure that describes according to electrical reset process of the present invention;
Figure 20 A is the figure of an example of the separated ladder shape lead-in wire of expression;
Figure 20 B is the figure of the separated example of a part of expression simple matrix;
Figure 21 is the structure chart of expression according to image processing system of the present invention;
Figure 22 is the circuit block diagram of expression according to image processing system of the present invention;
Figure 23 is the figure of expression according to an example of electrical reset pulse of the present invention;
Figure 24 is the basic block diagram of expression according to image processing system of the present invention;
Figure 25 A, 25B are the figure of expression according to the pattern of the fluorophor of image processing system of the present invention;
Figure 26 is that expression is according to the plan view of the present invention with the part of the electron source of matrix shape arrangement;
Figure 27 is the sectional view of cutting open along A-A ' line of Figure 26;
Figure 28 A～28H is the process of surface conductive electron emission device is made in explanation according to the present invention figure;
Figure 29 is the partial plan layout of expression according to the mask of surface conductive electron emission device of the present invention;
Figure 30 is the figure of the electrical connection situation of expression when forming some surface conductive electron emission devices of arranging with matrix shape;
Figure 31 is the circuit diagram that expression is arranged according to the circuit of electrical reset equipment of the present invention;
Figure 32 is the curve of expression according to an example of surface conductive electron emission device of the present invention;
Figure 33 is used for illustrating the figure with the electrical reset of the surface conductive electron emission device of simple matrix wiring according to the present invention;
Figure 34 is that the circuit diagram that the circuit of the electrical reset of Figure 33 is arranged is carried out in expression;
Figure 35 is the perspective view that is used to illustrate in electrical reset moment current flowing;
Figure 36 is used to be described in the electrical reset perspective view of the current flowing of another example constantly;
Figure 37 A～37C is the key diagram that carries out the electrical reset process by present embodiment;
Figure 38 is the equivalent circuit diagram that carries out the electrical reset process by present embodiment;
Figure 39 carries out the perspective view that is electrically connected of electrical reset according to an alternative embodiment of the invention;
Figure 40 is the block diagram of the main feature of expression device shown in Figure 39;
Figure 41 is the connection layout that carries out electrical reset equipment according to another embodiment;
Figure 42 is according to the partial plan layout of another embodiment of the present invention with the electron source of arranged;
Figure 43 A～43D is the figure that is used for describing with the process of high-resistance leads joint gap;
Figure 44 is the electrical reset processing figure of narration simple matrix lead-in wire;
Figure 45 is according to the partial plan layout of another embodiment with the electron source of arranged;
Figure 46 is the figure of expression according to the electron source of simple matrix shape arrangement;
Figure 47 is the plane graph of expression according to the part of the multiple electron source of another embodiment;
Figure 48 A, 48B are respectively the sectional view in gap and the figure that represents its connection;
Figure 49 A, 49B are that explanation uses probe to carry out the figure of electrical reset;
Figure 50 A is the figure of expression according to the brightness scrambling of electrical reset method 1;
Figure 50 B is the figure of expression according to the brightness scrambling of electrical reset method 2;
Figure 51 A, 51B are used for illustrating that with the lead-in wire current potential be figure according to the method for the address in detected electrons source;
Figure 52 is the figure of explanation according to an example of the electrical reset waveform of this embodiment;
Figure 53 is the block diagram of expression according to image processing system of the present invention;
Figure 54 A, 54B are the figure of the example of explanation electrical reset waveform;
Figure 55 is the figure of narration according to electrical reset method of the present invention;
Figure 56 is the electrical reset process is carried out in narration with the surface conductive electron emission device of ladder shape arrangement according to the present invention figure;
The invention provides a kind of electron source, image processing system and manufacture method with a plurality of electron emission devices of on substrate, arranging.In the electrical reset process of the electron emission part that forms a plurality of electron emission devices, not to be formed simultaneously particularly at on-chip whole electron emission devices.But device is divided into a plurality of devices, and mode is carried out electrical reset in order again, perhaps make to be electrically connected device and need not to go between and carry out, therefore, with regard to the magnitude of current of the lead-in wire that reduced to flow through and solved above-mentioned problem.The means that realize are as follows:
A. outside feed mechanism provides like this, that is: only voltage is added on the set of devices that needs the position, and the device in other groups is making alive not.
B., a kind of mechanism is provided, makes it when formation needs the set of devices at position, each device all is to give electrical reset under substantially the same voltage or equal-wattage.
Consider above-mentioned A point, special apparatus and method are as follows:
A-1. do along row and column to carry out electrical reset like this and handle, that is: current potential V in the structure of level and electron emission device connected vertically equipment with the simple matrix lead-in wire
1Be added at least one line lead, with V
1Different current potential V
2Be added on the lead-in wire of other row, and current potential V
2Be added on the lead-in wire of whole row, this operation is repeatedly carried out.
In addition, make N
X, N
YExpression follows the number of the device of direction and column direction arrangement respectively, and makes r
x, r
yBe illustrated respectively in the lead resistance of each device in line direction and the column direction.The method of electrical reset is: if satisfy:
(N
X*N
X-a*N
Y)*r
x≤(N
Y*N
Y-a*N
Y)*r
y，
Then carrying out electrical reset along directions X handles; If satisfy:
(N
X*N
X-a*N
y)*r
x＞(N
Y*N
Y-a*N
Y)*r
y，
Then carry out electrical reset and handle along the Y direction, wherein the power supply setting at one end, i.e. a=8 under the situation of X end or Y end; Power supply all is set, but a=24 under the situation of X end or Y end at two ends.
A-2. in the structure of equipping along the electron emission device that connects horizontally and vertically in the row and column, carry out electrical reset like this and handle, that is: current potential V with the simple matrix lead-in wire
1Be added at least delegation but be less than on the lead-in wire of whole row, being different from V
1Current potential V
2Be added on the lead-in wire of other row, current potential V
1Be added at least one row but be less than on the lead-in wire of whole row and current potential V
2Be added on the lead-in wire of other row.This operation repeats.
Consider above-mentioned B, special apparatus and method are as follows:
B-1. when electrical reset,, but add electrical reset voltage by the arrangements of electric connection that provides separately not from the terminal supplying voltage of common lead.
This arrangements of electric connection interconnects a plurality of positions of the common lead of device and electrical reset power supply by Low ESR.The structure of arrangements of electric connection is such: connect after electrical reset is finished at an easy rate and discharge, in addition, arrangements of electric connection is to make with the fabulous material of thermal conductivity, and has and be used for controlling temperature rise and by controlling the mechanism that device cools off.
B-2. connecting lead-in wire at least one line direction of electron emission device and the lead-in wire at least one column direction jointly all has a high impedance part or is separated by predetermined interval.Electrical reset voltage adds in this section to be gone up, and carrying out the electrical reset process again after high resistant part or the divided portion dead short circuit.
B-3. the electron emission device of arranging by one dimension or two-dimensional space is being carried out electrical reset when handling, specifying by the position of electrical reset device or detect the position of having carried out the device that electrical reset handles the voltage that is added to power supply terminal to be added by control.
Should be noted that said method A1 of the present invention, A2, B1, B2, B3 is single, and to carry out or combine all be effective.(back is referred to as method A1 to these methods of the present invention, A2, B1, B2 and B3).
The preferred embodiments of the present invention are described now.
Solution to the problems described above is applicable to electron source and image processing system, mim type electron emission device or the surface conductive electron emission device with ordinary electronic ballistic device array.Yet as described below, it is effective especially that these methods are used for the surface conductive electron emission device of inventor design.
Basic structure according to surface conductive electron emission device of the present invention mainly contains two types, i.e. plane and stairstepping.Planar surface conduction electron ballistic device is at first described.
Fig. 6 A and 6B are respectively the plane graph and the sectional views of the basic structure of explanation surface conductive electron emission device of the present invention.Basic structure according to device of the present invention is described with reference to Fig. 6.
Shown in Fig. 6 A and the 6B is substrate 61, device electrode 65,66, and the film 64 that comprises electron emission part 63.
The example of substrate 61 is quartz glasss, has reduced glass, the soda-lime glass of the impurity content as Na, with sputtering technology deposit one deck SiO on soda-lime glass
2And glass substrate that obtains or pottery are as alumina.
Any material is as long as it is that electric conductor just can be used as relative device electrode 65,66.The example that can mention is: the alloy of metal Ni, Cr, Au, Mo, W, Pt, Ti, Al, Cu and Pd or these metals, usefulness metal Pd, Ag, Au, RuO
2, the EP system made of Pd-Ag or metal oxide and glass conductor, as In
2O
3-SnO
2Such transparent conductor and semi-conducting material as the polysilicon.
Interval L1 between the device electrode is at the order of magnitude of hundreds of dust to the hundreds of micron.This is that the basic photoetching technique by the electrode manufacture process is the ability of exposure sources and etching technics and is decided by the electric field strength that is added in the voltage on the device electrode and can produces the electronics emission.L1 is several microns to tens microns the order of magnitude preferably.
The resistance value of consideration electrode and the problem that runs in placing the electron source that much is arranged are carried out the thickness d and the length W1 of selector electrode 65,66.Usually, the length W1 of device electrode 65,66 is several microns and arrives hundreds of micron number magnitude, and its thickness d is that the hundreds of dust is to several micron dimensions.
Being placed between the relative device electrode 65,66 of providing on the substrate 61 and on film 64 comprise electron emission part 63.Yet, having to be same as the scheme shown in Fig. 6 B under the certain situation, its film 64 is not placed on device electrode 65 and 66.Promptly form the film 62 of electron emission part and relative device electricity 65,66th, be arranged on the substrate 61 with the above-mentioned order of magnitude.Also having some situations is that whole zone between device electrode 65 and the device electrode 66 all is used as electron emission part, and this depends on manufacturing process.The preferably several dusts of thickness that comprise the film 64 of this electron emission part arrive several thousand dusts, and 10A to 500A is good especially.Select that this scope depends primarily on that the ladder of device electrode 65,66 is topped, the resistance value between electron emission part 63 and the device electricity 65,66, constitute the particle diameter and the electrical reset process conditions of the conducting particles of electron emission part 63.The resistance value of film represents that the sheet resistor value is from 10
3Ω/to 10
7Ω/.
The example that constitutes the certain material of the film 64 that comprises electron emission part is a metal Pd, Pt, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W and Pb etc., oxide PdO, SnO
2, In
2O
3, PbO and Sb
2O
3Deng, boride HfB
2, ZrB
2, LaB
6, CeB
6, YB
4And GdB
4, carbide TiC, ZrC, HfC, TaC, SiC and WC etc., nitride TiN, the few HfN of ZrN etc., semiconductor Si, Ge etc., and carbon particulate.
Atomic film described herein is called film, and this is a large amount of atomic aggregates, and as for micro-structural, this particulate is not limited to the particle of dispersion separately; This film can be a film, and the particulate in the film adjoins mutually or be overlapping.The diameter of particle is that several are to several thousand orders of magnitude, preferably 10～200 .
Can imagine and the process that various manufacturings have the electron emission device of electron emission part 63.Fig. 7 has represented an example, and wherein 62 is the films that form electron emission part.An example of this film is the particulate film.
With reference to accompanying drawing 6 and 7 manufacture process is described.
1) thoroughly cleans substrate 61 with washing agent, pure water or organic solvent, use deposition techniques device electrode materials such as vacuum deposition, sputter then.On the surface of insulating substrate 61, form device electrode 65,66[Fig. 7 with photoetching technique].
2) with the substrate sections between the formed device electrode 65 of organic metallic solution coated and 66, allow this coating constant then.The result just forms an organic thin metal film, and this organic metal solution is solution of organic compound, and its primary clustering (principaldevice) is a metal, as the aforementioned Pd, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W or Pb.After this, organic thin metal film is heated and dry handle and with peel off or lithographic technique formation pattern and constitute film 62[Fig. 7 B of electron emission part].Though described and used organic metal film and carry out the shaping of film, the present invention is not limited to this technology.Shaping can be adopted vacuum deposition, sputter, chemical vapor deposition, diffusion coating process, acid cleaning process, spin coating proceeding etc.
3) next be exactly the charging process that is called " electrical reset ".Be exactly to utilize the power supply (not shown) voltage to be added on device electrode 65 and 66 specifically with impulse form.In addition, carry out charging process according to the voltage that improves.The result of charging has formed electron emission part 63[Fig. 7 C that its structure has changed on the position of the film 62 that forms electron emission part].Because charging process, the film 62 that is used for forming electron emission part destroyed partly, be out of shape or change characteristic, the last zone that changed structure is referred to as electron emission part 63.As begin described, the applicant has observed electron emission part 63 and has been made of the micro conductive particle.Fig. 8 represents is the voltage oscillogram that adopts during electrical reset is handled under the situation of pulse.
Among Fig. 8, T1 and T2 represent the pulse duration and the pulse spacing of voltage waveform respectively.Pulse width T 1 be 1 μ s to the 10ms order of magnitude, and pulse spacing T2 be 10 μ s to the 100ms order of magnitude, and suitably select the crest voltage (electrical reset constantly crest voltage) of triangular wave.It is 1.333 * 10 that electrical reset is handled
-3Carry out under the vacuum of handkerchief that tens seconds time durations to a few minutes carry out.
In the formation of above-mentioned electron emission part, triangular pulse voltage is added in electrode two brings in and carry out electrical reset and handle.But added waveform is not limited to triangular waveform on the electrode.Can be with the waveform of any needs, as can using square wave, and peak value, pulsewidth and pulse spacing also are not limited to above-mentioned value.Can wait the value of selecting needs according to the resistance value of electron emission device, so that form desirable electron emission part.
In measurement shown in Figure 9 with detailed estimate the electricity of following electrical reset in the device and handle.Now this device is illustrated.
Fig. 9 is the schematic block diagram of a measurement mechanism, and this device is used to measure the electron emission characteristics of the device with structure shown in Figure 6.Being shown among Fig. 9 is substrate 61, device electrode 65 and 66, and the film 64 that is used to form electron emission part 63.In addition, electric current of label 91 expressions is used for providing device voltage Vf to described device; Label 90 is ammeters, is used for measuring element electric current I f, the film 64 that this device current If flows through and contain electron emission part between device electrode 65 and 66; Label 94 is anodes, is used to capture the emission current Ie by the electron emission part emission of device; Label 93 is high voltage sourcies, is used for applying a voltage to anode 94; And label 92 is ammeters, is used to measure the emission current Ie by electron emission part 63 emissions of this device.
For device current And if the emission current Ie that measures electron emission device, power supply 91 and ammeter 90 are received on device electrode 65 and 66, and the anode 94 that power supply 93 and ammeter 92 are attached thereto is positioned at the top of electron emission device.Described electron emission device and anode 94 are placed at the inside of a straight empty device, and this vacuum plant is equipped with exhaust pump, vacuum gauge, and other the required device in straight do-nothing operation storehouse.Described device is measured and is assessed under desirable straight sky.
Measurement is carried out under following condition, and but anode voltage is 1～10KV, and the distance H of anode and electron emission device is 2～8mm.
Figure 10 shows the typical case that concerns between emission current Ie, device current If that the measurement mechanism that utilizes Fig. 9 records and the device voltage Vf.Because it is very little that emission current Ie compares with device current If, so what the explanation of Figure 10 was adopted is arbitrary unit.From Figure 10, should obviously find out and have three features about emission current Ie.
At first, when a device voltage greater than a certain voltage (being called threshold voltage, represented by the Vth among Fig. 7) was added on this device, emission current Ie suddenly increased; On the other hand, when the voltage that is applied during less than threshold voltage, emission current Ie is detected next to nothing.In other words, this device is a nonlinear device, for emission current Ie, the threshold voltage of determining is clearly arranged.
The second, because emission current Ie is relevant with device voltage Vf, so, can implement control to emission current by device voltage Vf.
The 3rd, relevant by the electric charge of being launched that anode 94 is captured with the time that voltage Vf is applied.That is to say, can be controlled according to the time that device voltage Vf applies by anode trapped charges amount.
Because the feature of foregoing surface conductive electron emission device is such, be that device current And if emission current Ie increase monotonously with respect to the device voltage that is applied, so, can use in various mode according to electron emission device of the present invention.
In Figure 10, show and give an example with respect to the characteristic of the dull device current If that increases of device voltage Vf (this is called the MI feature) with solid line If.Yet, also having under some situations, device current If shows the voltage-controlled negative resistance charactertistic (a voltage-controlled negative resistance characteristic) (being referred to as the VCNR feature) with respect to device voltage Vf.This characteristic that it is believed that device current is that measuring condition and the manufacture method when carrying out with measurement is relevant.In this case, according to aforesaid characteristic, electron emission device also has three features.
Furtherly, in a surface conductive electron emission device, the basic preparation process that is used for basic device architecture of the present invention can change.
Below, described staged (step-type) surface conductive electron emission device will be described, it is according to another kind of type list surface conduction electron ballistic device of the present invention, and Fig. 2 schematically illustrates according to a basic staged surface conductive electronics emission of the present invention.
As shown in Figure 2, a substrate 61 is arranged, device electrode 65 and 66, contain the film 64 of an electron emission part 63, and a ladder forms part 21.The material that constitutes substrate 61, device electrode 65 and 66, the film 64 that contains electron emission part and electron emission part 63 and the above-mentioned plane formula surface used material of sub-ballistic device that conducts electricity is identical.Now, will describe the film 64 that ladder forms part 21 and contains electron emission part in detail, they are feature places of staged surface conductive electron emission device.
Ladder forms part 21 by for example SiO
2Such insulating material constitutes, and can form by modes such as vacuum moulding machine, printing, sputters.It is corresponding with the electrode spacing L1 of aforesaid plane formula surface conductive electron emission device that ladder forms the thickness of part 21, at the hundreds of dust between the tens millimeter magnitudes.The electric field strength that ladder forms the preparation method of part, is applied to the voltage on the device electrode and can produces the electronics emission is depended in the setting of this thickness.Best, this thickness at several thousand dusts to several millimeters the order of magnitude.
Since the film 64 that contains electron emission part device electrode 65,66 and ladder form part 21 prepared after just formation, so, it can be formed on the device electrode 65,66.In some cases, described film 64 given reservation shapes, but lack the lap of the electrical connection of carrier band device electrode 65,66.And then the thickness that contains the film of electron emission part depends on its preparation process.In many cases, the thickness that is positioned at the thickness of step portion and is formed on the part on the device electrode 65,66 is different.In general, the thickness of step portion is less.Although should be noted that electron emission part 63 shows that this is not the restriction to its shape and position as being linear on ladder formation part 21 in Fig. 2.Shape is relevant with preparation condition, formation condition etc. with the position.
Although the basic structure and the preparation process of his-and-hers watches surface conduction electron ballistic device explain, but scope of the present invention is such, i.e. the present invention is not limited to preceding structure, as long as it has above-mentioned three features, and relevant with the feature of surface conductive electron emission device.Also applicable to an electron source and an image processing system, example is display unit as will be described for this surface conductive electron emission device.
Can constitute electron source or image processing system by on a substrate, arranging a plurality of electron emission devices of the present invention.
The example of arranging a kind of method of described electron emission device on substrate is that ladder shape is arranged (ladder array).Here, in prior art, a plurality of surface conductive electron emission devices are arranged in parallel, and the two ends of each device connect capable to form an electron emission device by wiring.A plurality of such row are arranged along the direction of row.Direction (the be referred to as column direction) arrangement perpendicular with the direction of the wiring of going pressed in the place of control electrode (being referred to as grid) above electron source.This arrangement is called ladder shape and settles, and in this arrangement, electronics is controlled by control electrode.Another example is to be referred to as simple matrix to arrange, wherein, the lead of n y direction is placed on the lead of m x direction through a middle part insulating barrier, and the lead of x direction and y direction is connected to the device electrode of each surface conductive electron emission device on the last electrode separately.
Surface conductive electron emission device of the present invention has three essential characteristics with regard to its characteristic.
At first, when the device voltage greater than a certain voltage (be referred to as threshold voltage, represented by the Vth among Figure 10) was applied on this device, emission current Ie suddenly changed.On the other hand, when the voltage that is applied during less than described threshold voltage vt h, emission current Ie is detected next to nothing.In other words, this device is a nonlinear device, considers emission current Ie, and clear definite threshold voltage vt h is arranged.
The second, because emission current Ie is relevant with device voltage Vf, so it can be controlled by device voltage.
The 3rd, the electric charge of being launched of being captured by anode 94 is relevant with the application time of device voltage Vf, that is to say the time Be Controlled that the quantity of 94 trapped charges of anode can be applied according to device voltage Vf.
Therefore, by surface conductive electron emission device electrons emitted,, also can be controlled by a peak value and a width that between relative device electrode, applies greater than the pulsed voltage of described threshold value even line up the simple matrix shape when these devices.When applying voltage less than threshold value, almost not having electronics is launched, according to this characteristic, the surface conductive electron emission device can be selected according to an input signal, if even a pulse voltage also is suitable for being applied on each device when these a plurality of devices are lined up.This makes control electronics emission quantity become possibility.
Now, the structure of the electron source substrate that Benq makes in this principle with reference to Figure 11 has illustrated an insulating substrate 111 among Figure 11, x direction wiring 112, y direction wiring 113, surface conductive electron emission device 114 and connecting line 115.It should be noted that this surface conductive electron emission device 114 can be plane formula or stepped.
In Figure 11, described insulating substrate 111 is the above-mentioned glass substrate or the substrate of similar substance formation, its size and thickness are suitable for setting like this, promptly according to the number of the surface conductive electron emission device of being placed in the substrate 111, according to the shape of each device of designing requirement, and, if the effect of a housing (vessel) is configured for this device is used as this purpose of electron source, the setting of so above-mentioned size and thickness will depend on that also the inside that keeps housing is in the condition of the state that constantly vacuumizes.X direction lead contains m lead D
X1, D
X2..., D
XmThey are to utilize vacuum moulding machine, printing or sputtering technology to be formed on conducting metal on the insulating substrate according to desirable mode.Described material, thickness and conductor width are set by this way, and promptly the voltage of a basically identical will be applied on a plurality of surface conductive electron emission devices.Y direction lead 113 contains n lead D
Y1, D
Y2..., D
YnAs the lead of x direction, the lead of y direction also is to utilize straight empty deposition, printing or sputtering technology to be formed on conducting metal on the insulating substrate according to the mode of hope.Material therefor, thickness and conductor width are set by this way, and promptly the voltage of a basically identical will be applied on a plurality of surface conductive electron emission devices.Intermediate insulating layer (not shown) is placed between m x direction lead 112 and n the y direction lead 113 so that it is electrically insulated, and constitutes square formation line (should note: m and n are positive integers).
The intermediate insulating layer (not shown) is a kind of such as SiO
2Such material utilizes vacuum moulding machine, printing or sputter or similar technology to form.This intermediate insulating layer has formed at x direction lead 112 on the whole surface of dielectric base 111 thereon or on the part surface and has formed by desirable shape.Its thickness, material and preparation method should suitably be selected, so that insulating barrier can bear the electrical potential difference at the merge point place between x direction lead 112 and the y direction lead 113.The line that constitutes x direction lead 112 and y direction lead 113 is all drawn a coupling.
In addition, as preamble is illustrated, the comparative electrode (not shown) of surface conductive electron emission device 114 utilizes m x direction lead 112 and n y direction lead 113 and utilizes lead 115 to be electrically connected, and lead 115 is conducting metal or the analogs that utilize vacuum moulding machine, printing or sputter etc. to form.
The conducting metal of m x direction lead 112, a n y direction lead 113, lead 115 and relative device electrode can be integrally or is partly constituted same device, perhaps can adopt different metal materials.Conducting metal can be from following metal Ni, Cr, and Au, Mo, W, Pt, Ti, Al suitably selects in Cu and Pd and the alloy thereof, and printed conductor is by metal Pd, Ag, Au, RuO
2, Pd-Ag or metal oxide and glass are such as In
2O
3-SnO
2The such semiconductor of such transparent conductor and organosilicon constitutes.In addition, described surface conductive electron emission device can be formed on the insulating substrate 111 or be formed on the intermediate insulating layer (not shown).
More particularly, sweep signal generating means (not shown) is electrically connected on the x direction lead 112, and the back will be illustrated this.This sweep signal generating means applies a sweep signal, is used for according to the surface conductive electron emission device capable implementation scanning of described input signal to arranging on the x direction.Other direction, modulation signal occurrence device (not shown) are electrically connected on the y direction lead 113, and the back will be illustrated this.This modulation signal occurrence device applies a modulation signal, is used for according to the signal of being imported, and each row that is arranged in the surface conductive electron emission device on the y direction are modulated.And, be applied to driving voltage on each device of surface conductive electron emission device and be provided as the sweep signal that is applied on the above-mentioned device and the differential voltage between the modulation signal.
In such scheme, each device only utilizes simple matrix lead just can be selected and drive.
When above-mentioned surface conductive electron emission device was energized by the electrical reset process, electric current was then delivered on the device through above-mentioned lead.Yet, because above-mentioned those problems, put on the distribution (distribution) that voltage during the electrical reset process can cause each device electron emission amount, this is because the thermal loss in lead and lead can cause due to the distribution of potential drop.When this surface conductive electron emission device was used as an electron source, it was difficult utilizing a kind of simple driving to obtain a uniform amount of electrons.Be used as at the surface conductive electron emission device under the situation of image processing system, defective is the distribution that exists in the brightness.
Can address the above problem by adopting according to the process of a plurality of electron emission device electrical resets of giving of the present invention.Below preferable methods in all methods will be described.
At first with method A-1.
In the electron source with simple matrix design of Figure 11, electric heating V2 is added in all the lead termination Dx on the x direction
1To D
Xm, the electromotive force V1 that is different from V2 is added at least one optional lead termination D on the y direction
YiOn, and electromotive force V2 is coupled with on all other lead terminations on the y direction.According to the present invention, electrical reset is implemented like this, promptly with surface conductive electron emission device that the y direction lead of selecting arbitrarily is connected on apply voltage V1-V2[V], on other not selecteed surface conductive electron emission device, apply voltage V1-V2=0[V].Electrical reset is by the result who successfully repeats this process (this process will be called as capable electrical reset).
More particularly, not selecteed surface conductive electron emission device does not reach quick condition (a kind of unstable potential energy attitude), and, revolve the voltage that is added on the device (energizing simultaneously) not by the matrix line transmission, its result, the surface conductive electron emission device of handling without undergoing energizing can be by electrostatic breakdown or damage, and, can prevent owing to be applied to the deterioration of the electron emission part that the fluctuation that stands the voltage on the electrical reset device causes.This will make the characteristic that each device is agreed become possibility.
It is a fixed potential (DC) (promptly not changing in time) that above-mentioned electromotive force V1 and V2 also needn't be limited as.These electromotive forces can be the pulsed waveforms, for example triangle or square-wave.And, electromotive force V1, V2 both all not DC waveform or pulsed waveforms, or only to have a kind of be the pulsed waveform.Here, the voltage difference V that are applied to those surface conductive electron emission devices of handling without undergoing electrical reset can not provide and be used as a kind of voltage waveform, and this voltage waveform is enough to make the electron emission part of handling through electrical reset to finish electrical reset.Under the situation of pulsed waveform, voltage difference V1-V2[V] be crest voltage.And, can be row or be multiple row simultaneously for implementing an electrical reset processing row of always selecting.In that multiple row is selected when going out, consider the Temperature Distribution in the substrate, this Temperature Distribution is because the heat that generates during electrical reset causes.Therefore, preferably select to fall out so that uniformity of temperature profile by the sawtooth mode.Stand simultaneously at a plurality of row under the situation of electrical reset, the required time of electrical reset shortens, but requires voltage source that the big magnitude of current is arranged.So, implement when of the present invention, consider the time that electrical reset is required and the magnitude of current of voltage source, select the number that can produce the row of best economic effect and carry out electrical reset.
In addition, which of the line of x direction and y direction is selected goes out should to decide by the mode of following explanation to carry out capable electrical reset.
Figure 12 is an equivalent electric circuit that adopts the simple matrix display unit of surface conductive electronic emission element.Wherein R represents component resistance, r
x, r
yExpression in the horizontal direction with vertical direction on the cloth line resistance of each pixel, in addition, represent in the horizontal direction component number with Nx, Ny is illustrated in the component number on the Y direction, when this display unit stands the electrical reset processing, usually, electrical reset concentrates on row at every turn or concentrates in the delegation at every turn and carries out.The electrical reset that provides electric energy to carry out to a plurality of elements from predetermined power unit (one or more position) is provided this so-called " row electrical reset "; It might not mean carries out electrical reset simultaneously to a plurality of elements.Figure 13 is the equivalent electric circuit of description line electrical reset schematically.Wherein, the impedance and the V of line outside the device etc.
x, r
y, to compare be negligible.Figure 13 illustrate son in the horizontal direction (start at k from ground capable) go up the example that electrical reset is carried out in concentrated area.If component resistance R and cloth line resistance r
x, r
yDo not show difference, so, it then is such that electromotive force on element distributes, and promptly from the nearest element of power unit maximum potential is always arranged, this from Figure 13 obviously as can be seen.In addition, handled resistance big 2 or 3 unitss before by the resistance ratio electrical reset of the element of electrical reset.Therefore, when row electrical reset when being performed, element begins in succession by electrical reset (=by) from power supply one side.Figure 14 is an equivalent electric circuit, be used for when element is arrived (n-1) individual element by electrical reset, and n element is when standing electrical reset, more particularly, in this state, by electrical reset, become the trapezium structure of the few element of circuit among this Figure 14 from nearest n the element of power unit at next equivalent electric circuit constantly.And if to (n-1) individual element by under the state of electrical reset, a constant voltage V
0Be provided on the power unit, so, be assigned to n the voltage on the element and provide by following formula:
V(k，n)＝[1-k*r
y/R-n*(N
x-n+1)*r
x/R]V
0 (1)
This equation can be pushed at an easy rate can be regarded as and be 4 common end moment battle arrays of a series of N-n levels (ordinary four-terminal matrix).Here, r
x, r
yIt is enough little comparing with R.If express, so, be added in n the power on the device and provide by following formula according to power:
P(k，n)＝[1-2*k*r
y/R-2*n*(N
x-n+1)*r
x/R]*V
0*V
0/R (2)
In other words, can understand like this, V and P are the functions of k and n, along with the quadratic function of element addresses n on the electrical reset direction of being expert at changes and along with the linear function of element addresses k on other direction changes.Figure 15 illustrates the dried rhizome of rehmannia that the distribution of voltage in this example or power has been described.
The following problem that above-mentioned capable electrical reset is drawn: from Figure 15, be appreciated that, even a constant voltage is added on the power supply, when element during by electrical reset, address according to element, on voltage that is applied and power, can create a difference, when component number when being big, and compare with component resistance when becoming greatly when connection resistances, this phenomenon has very big influence.Before first device was by electrical reset, the maximum of the power that applies immediately on the n direction and the difference of minimum value were provided by following formula (3).Specifically, maximum power is located to produce at power end (n=1), and minimum power is at (the n=N of place, centre
X/z) produce.If P0=V
0* V
0/ R keeps, then
P(k，1)-P(k，N
x/2)～N
x*N
x/2*(r
x/R)*P0 (3)
In addition, the difference of maximum and minimum value can be provided by following formula on the k direction, and this is because maximum produces at power supply place (k=1), and minimum value is being located in (k=K) generation.
P(1，n)-P(N
y，n)～2*N
y*(r
y/R) (4)
When the component number on the electrical reset direction of being expert at increases, can produce suddenly in the difference between the element under the electrical reset condition, as two equatioies that provide above are pointed.Therefore, when a panel (panel) is made into the large scale screen, can cause the adverse effect that to ignore.The example of Figure 15 is to be used for the situation that power supply is positioned at an end of row (or row).Be located at power supply under the situation at two ends, each element is become big by the power that is applied immediately before the electrical reset, because the symmetry of system, the two ends and the mid portion of row (or row) stand the row electrical reset, and, diminish in place from 1/4th length at two ends.Like this, the variation based on address of devices can exist.
As a result, stand at a simple matrix under the situation of row electrical reset, when a constant voltage was applied on the power unit, the power that is applied to n device was provided by following formula:
P(k，n)＝[1-2*k*r
y/R-2*n*(N
y-n+1)*r
x/R]P0
；P0＝V
0*V
0/R (5)
The difference of maximum and minimum value is on the n direction:
ΔP＝N′*N′/2*(r
x/R)*P0 (6)
The difference of maximum and minimum value is on the k direction:
ΔP＝2*K*(r
y/R)*P0 (7)
When at one end power supply being arranged, keep the relation of N '=N; The relation (n is considered to the symmetry relevant with N/2) that when there is power supply at two ends, keeps N '=N/2
Furtherly, when the surface conductive electronic emission element is arranged in one dimension ladder shape rather than a simple rectangle, also there is same problem to exist.Figure 16 A, B and C have illustrated the example of equivalent electric circuit, and are applied in constant voltage under the situation of power unit, and the power that applies immediately between each device electrical reset is because the example of the different caused difference of address of devices.
With N announcer number of packages, r represents the connection resistances of each device, and R is a device resistance.
Figure 16 A is such example, and wherein, power supply is positioned on the position of an end of ladder shape row, and grounded part is positioned on the position of the other end.As voltage V
0When being added on the power unit, until (n-1) individual no part, and the power that is applied when n element electrical reset is the function of n to element, and is as follows by electrical reset:
P(n)＝[1+(n*n+n-N*N-3*N-2)*(r/R)]*P0
；P0＝V
0*V
0/R (8)
The difference of maximum and minimum value becomes:
ΔP＝P(N)-P1(1)＝(N+2)*(N-1)*P0 (9)
Figure 16 B is such example, and wherein, power unit and grounded part all are positioned at an end of the same side of ladder shape row.
Figure 16 C is such example, and wherein, power unit and grounded part are positioned on the position separately of both sides of ladder shape row.As the situation of Figure 16 A, can draw P (n), Δ P is as follows:
P(n)＝[1-4*n*(N-n+1)*(r/R)]*P0；
P0＝V
0*V
0/R (10)
ΔP＝P(1)-P(n′/2)＝N′*N′*(x/R)*P0 (11)
Under the situation of Figure 16 B, keep this relation of N '=N.The relation (n is considered to the symmetry relevant with N/2) that under the situation of Figure 16 C, keeps N '=N/2.
Even be appreciated that from Figure 16 A-C a constant voltage is added in power unit, even under the situation that one dimension is arranged, because the difference of address of devices, the power that applied immediately before each device is by electrical reset can produce a variation.
Therefore, when a device that has with the surface conductive electron emission device of two-dimensional array concentrates on delegation at every turn and stands electrical reset, even reduce (direction of row or column) and carry out electrical reset if can select such direction to be applied to variable power on each device, can obtain a good result so.
More particularly, this is a kind of electrical reset method that is used for multiple electron source, it is characterized in that electrical reset is carried out in the x direction if following formula is set up:
(N
y*N
x-a*N
x)*r≤(N
y*N
y-a*N
y)*r
y (12)
And if following formula is set up, electrical reset is carried out in the Y direction:
(N
x*N
x-a*N
x)*r＞(N
y*N
y-a*N
y)*r
y (13)
Here, x and y are two-dimensional directions, N
x, N
yBe illustrated in the number of pixels on all directions; r
x, r
yBe illustrated in the connection resistances of each device on all directions.
Be positioned under the situation of an end of x or y a=8 at power unit; When the two ends of power unit at x or y, a=24.It should be noted that described direction is determined by power supply when each device during by electrical reset.
The condition that will in a simple manner above-mentioned equation be described below and be characterized.
Owing to be considered to a kind of thermal phenomenon by energizing of charging, so the power that is applied on each device is being represented a problem.So above-mentioned equation can be thought following form:
P(k，n)＝[1-2*k*r′/R-2*n*(N-n+1)*r/R]*P0
；P0＝V
0*V
0/R (14)
So, if power supply shown in Figure 17 A, utilizes top defined device count N in the x and y direction only at an end of x or y direction so
x, N
y, address of devices (x, y)=(n, k), device resistance R and connection resistances r
x, r
yCan draw:
(1) when x direction row electrical reset
P(k，n)＝[1-2*n*(N
x-n+1)*(r
x/R)-2*k*(r
y/R)]*P0 (15)
；P0＝V
0*V
0/R
When n=k=1 set up, P became maximum; Work as n=N
x/ 2, k=N
yDuring establishment, P becomes minimum value.
Maximum from the teeth outwards is
P(1，1)/P
0＝1-2*N
x*(r
x/R)-2*(r
y/R) (16)
Minimum value in the surface is
P(N
x/2，N
y)/P0～1-N
x*N
x/2*(r
x/R)-2*N
y(r
y/R)...
(17)
Difference in the surface is
P
x＝[P(1，1)-P(N
x/2，N
y)]P0～(N
x*N
x/2-2*N
x)*(r
x/R)+2*N
y(r
y/R)... (18)
(2) when y direction row electrical reset:
P(k，n)＝[1-2*n*(rR-2*k*(N
y-k+1)*(rR)]*P0
；P0＝V
0*V
0/R (19)
P becomes maximum when n=k=1, works as n=N
x, k=N
y/ 2 o'clock, P became minimum value.
Maximum in the surface is:
P(1，1)/P0＝1-2*(r
x/R)-2*N
y*(r
y/R) (20)
Minimum value in the surface is:
P(N
x，N
y/2)/P0～1-2*N
x*(r
x/R)-N
y*N
y/2*(r
y/R)
(21)
Difference in the surface is:
P
y＝[P(1，1)-P(N
x，N
y/2)]P0～2*N
x*(r
x/R)+N
y*N
y/2-2*N
y)*(r
y/R) (22)
So, if P
x≤ P
ySet up, if i.e. (N
x* N
x-8*N
x) * r≤(N
y* N
y-8*N
y) * r
ySet up, so, be preferably in x direction concentrated area and carry out electrical reset.If P
x＞P
y, set up, if i.e. (N
x* N
x-8*N
x) * r
x＞(N
y* N
y-8*N
y) * r
ySet up, be preferably in concentrative implementation electrical reset on the y direction.
Be positioned at power supply under the situation at two ends of x or y direction, shown in Figure 17 C and 17D,, so, can obtain following conditional expression if designed scheme is to be symmetrical with respect to the row of concentrating electrical reset:
(N
x*N
x-24*N
x)*r
x＞＝＜(N
Y*N
y-24*N
y)*r
y
Like this, as mentioned above, the direction that is suitable for the row electrical reset can be by determining in connection resistances on the both direction and the relation between the device count.
Electrical reset process and voltage waveform be to shown in Figure 8 similar, and set in the corresponding way.
Below with illustration method A-2.
Electrical reset is by electrical reset power supply (a kind of electromotive force of V1 or V2) is received capable line (D
X1～m) and row line (D
Y1～n) on, as shown in figure 18.At this moment, V1 is applied on the capable line of K of whole capable line, and V2 is applied on remaining (m-k) row line, and V2 is added on the row line in the whole row line, and V1 is added on remaining (n-1) individual row line.As a result, in all surface conduction electron ballistic device, there is the individual device of k*1+ (m-k) * (n-1) selected.In selected surface conductive electron emission device, voltage V2-V1 is added on the device electrode 65,66 among Fig. 6, and to the electron emission part electrical reset, this electron emission part is a variation to be arranged with to the electron emission device electrical reset on the structure of film portion.
Then, exchange mutually by making the electromotive force V1 and the V2 that are connected on the row line (or row line), originally non-selected surface conductive electron emission device can be selected, and carry out electrical reset in a similar manner.The waveform that is shown in Fig. 8 can be used for the voltage waveform of electrical reset process.
The difference of method A-2 and method A-1 is that in method A-1, electrical reset is carried out with behavior unit; In method A-2, electrical reset is that unit finishes with the group, and its effect is similar to A-1.Exactly, voltage is not divided on the surface conductive electron emission device that does not carry out electrical reset, and, the decreased number of the device that electrical reset voltage will apply half, the current value of the line of consequently flowing through has reduced.So, since the difference of the surface conductive electron emission device feature that causes of the caused potential drop of line can be suppressed.
The following describes method B-1.
The feature of preparation process is described referring now to the individual devices sectional view of the circuit diagram of the block diagram of Figure 19 A, Figure 19 B and Figure 19 C.
In Figure 19 A, a plurality of electron sources of label 191 expressions, 192 expression arrangements of electric connections, 193 are that a temperature controller, 194 is electrical reset power supplys, 195 is temperature sensors.Representing according to charging process device of the present invention with the part that solid circles is sealed.Described a plurality of electron source 191 is such devices, is wherein arranging a plurality of above-mentioned electron emission devices.These devices are connected by a common conductor.Described arrangements of electric connection has a kind of like this mechanism, and promptly it can carry out the electrical connection of a plurality of parts that are arranged in the electron emission device on a plurality of electron sources 191.This jockey is through resistance rf1, and rf2 receives each part of a plurality of electron sources, shown in Figure 19 B.Because arrangements of electric connection is at its vpg connection and unrestricted, the common conductor that for example can be used as electron emission device is (if this device is an image processing system, shape refers to the shape and the size of film so), so, resistance rf1, rf2 can make with device between the resistance r of public line to compare be enough little.When finishing in a plurality of parts of the electron emission device that is arranged in delegation when connecting, and voltage is when power supply VE provides, shown in Figure 19 B, so, because the number of parallel wire is very little, its resistance is trickle, so the potential drop between the resistance rf2 also is enough little.Being applied to the coupling part equates basically to the voltage on the public line.In addition, parallel resistance has all identical values as can be seen from the junction point, at this moment because on the left side and be connected with the device of equal number on the right.As a result, relatively use the public line this situation of charging, the difference that is applied directly to the voltage on each device can become very little.
Further, described design is such, promptly adopt the material with outstanding heat-conductive characteristic to be used as the FC of bindiny mechanism, the element with big thermal capacity is placed on the follow-up position, the controlling organization that also provides heating and cooling mechanism and they are controlled.So according to this design, the FC of bindiny mechanism not only is used for making electric current flow through device, but also as the conducting path of heat, and play the effect that the temperature that makes the electron emission part by device electrode changes.Figure 19 C is the sectional view of a coupling part.Wherein label 195 is substrates, the 65, the 66th, be used to the device electrode that obtains to be electrically connected, and 64 is films, contains electron emission part 63,197th on it, arrangements of electric connection is as heat conduction path.Although what illustrate is that arrangements of electric connection 197 is connected on the device electrode,, much less, it also can be connected on the line.
The examples of material that can be used for constituting jockey 197 is metals, for example aluminium, indium, silver, gold, tungsten, molybdenum and alloy, for example brass, stainless steel.In order to reduce the contact resistance of connection, and be suppressed at the distribution of the contact resistance of a plurality of coupling parts, preferably make jockey have the surface of oneself, it is a kind of metal of high degree of rigidity, this surface-coated has a kind of low resistive metal, and each jockey is added on the contact line by the load with tens grams and is equipped with charger (load applying means) (not shown).Load maintainer contains a bounce-back element, for example can use a coil spring or reed.
Above-mentioned arrangements of electric connection is connected on the row or multiple row of matrix form wiring, and electrical reset is handled and carried out simultaneously on delegation or multirow, after this, removes the row that is connected, and carries out on all row so that electrical reset is handled adjoining land.If the number of arrangements of electric connection is bigger, so also can carry out electrical reset to all row simultaneously.
In addition,, preferably window is set in contact portion if when arrangements of electric connection is located on the wiring layer under the insulating barrier of above-mentioned simple matrix in being provided with, and, on the position between low wiring layer and the electric apparatus connector, coat one and lead low resistive metal.In addition, this method and method A-1 are combined, by directions X line or Y direction line are provided, promptly electrical reset voltage only has delegation or one row are selected goes out in order to apply, utilize a plurality of arrangements of electric connections, and will only be applied to from the voltage of terminal on the non-selected line and the line on the other direction that goes out on the same direction, and can access the promising result of expection.
Although the electrical reset method in having the electron source that simple matrix arranges has been done many explanations,, also might be in having ladder shape electron source using method B-1.
In above-mentioned design,, when device electrode is cooled simultaneously, the temperature of film 64 is raise because electrical reset electric current I f draws the generation of the Joule heat of will when electrical reset voltage is applied in.At this moment temperature curve compared with prior art is very steep, (not carrying out cooling in the prior art).Its reason is that the heat that is produced by device makes metal electrode 65 and 66 coolings by metal electrode 65 and 66 amounts that spread greater than amount, process jockey 197 by quartz or glass substrate 67 diffusions, is much improved the efficient of thermal diffusion by conduction.
The inventor has confirmed that electron emission part is created on the peak by the temperature curve of the device that causes of heat of charging.The inventor believes that this temperature is the reason that crackle forms.
In general, when electrode spacing surpassed 10 μ m, temperature curve was wide.Can affirm that for this reason, electron emission part has produced big difference.So, very low if electrode temperature is controlled so as to so that temperature curve is steep, as the present invention did, so,, the difference of electron emission part is diminished even electrode spacing enlarges.
In fact, when electrical reset is performed, simultaneously, when charging process control temperature of the present invention, even electrode spacing greater than 10 μ m, it is steep that the temperature curve of film also can become, the wide meeting of peak region narrows down.As a result, the difference in the electron emission part remains very little.Furtherly, might carry out control in such a way, a plurality of electron emitting devices of promptly arranging in said apparatus are maintained at a steady temperature.The problem of prior art above-mentioned, promptly the problem of the temperature difference of core in the multiple electron source device and marginal portion has been overcome.The result is that the variation of the electron emission part when carrying out electrical reset diminishes.
Next describing method B-2.
The method that is used to realize a kind of layout is at first described.Jointly being connected one of at least of lead-in wire or file lead-in wire walked crosswise in the layout, a plurality of what separate with predetermined space was electron emission device, or provided a high resistant part with predetermined interval in a layout.
Shown in Figure 20 A is the wiring of ladder shape, and Figure 20 B illustrates the part of a simple matrix being cut apart form.Line is to constitute by photoetching or printing.In any situation, if being provided in advance, the overlay film figure divides the gap, then utilize the connection of this kind situation just can obtain predetermined space division gap.Certainly, the lead-in wire with division gap of predetermined space also can make it to melt the method that keeps this lead-in wire and obtains by forming continuous lead-in wire and adopting the YAG laser subsequently or depend on the mechanical device of cutting saw.
A kind of method of high resistant part that provides is as follows:
A kind of have a high resistive metal, and for example a film nichrome is as described above, is being divided on the gap by vacuum moulding machine, thereby is producing Thinfilm pattern.Constitute continuous lead-in wire, and done very narrowly in the wire widths of a part.In addition, on thickness, the even making of lead-in wire is partly reduced, so that utilize a grinding technique to form the film protection.Thereby obtained the high impedance part.
Subsequently, apply the electrical reset processing by electric current being input to this substrate and adding an electrical reset voltage to concrete device.The method of the input of mentioning here comprises from the end adding electric current of lead-in wire with from implementing electrical reset near the device in lead terminal zoning to be handled.Can utilize the device feed-in electric current of the particular electrical jockey that is similar to above-mentioned B-1 method use.
After electrical reset is added to predetermined portions, divide compartment or high impedance part by short circuit.The method is described now.
A kind ofly realize that the method for short circuit is to adopt the wire bonds or the tape welding that comprise Au or Al to connect simply.
Another kind method is, the part of the vicinity of one side of gap portion or high impedance part or this high impedance part is coated, and this coating is to utilize the metal film of gold-silver coating or the low-melting In of containing Bi by using little expander or relying on photoetching process to provide.This coating or low-melting-point metal be by laser or infrared radiation institute heat fused, with fill this molten metal to this division gap or high impedance partly and realize short circuit.In addition, make current concentration in the high resistant part, thus the temperature of this high resistant part that raises, to obtain to be similar to the above-mentioned effect that obtained to METAL HEATING PROCESS.
Present describing method B-3.
According to this method, walk crosswise or a file experience row electrical reset for one of device, and a voltage that is added to power pack is controlled by this way, promptly, added curtage, for being arranged in one dimension or for all devices of the electrical reset of each device in the simple matrix of scalariform form, will constantly providing.Consider the prior art problem, promptly add to the fluctuation of outside terminal with the voltage that carries out electrical reset, add to the voltage of power pack by control, detect simultaneously and walk crosswise in (or a file) which device electrical reset in one of experience row electrical reset and finish, realize the electrical reset of row.Make like this and might keep constant electrical reset condition for all devices.
In two-dimentional simple matrix was arranged, power pack was to walk crosswise or the end of a file one, and when walking crosswise the electrical reset device experience row electrical reset at (or file) two ends at this, the voltage that is added to power pack should be reduced.To close core electrical reset device, the voltage that is added to power pack should be transferred greatly.Further, at power pack is to walk crosswise one in the situation at two ends of (or file), when the electrical reset device be this walk crosswise the two ends of (or file) and be near the experience electrical reset walk crosswise the center of (or file) time, the voltage that is added to power pack should diminish.When the electrical reset device is that the voltage that is added to power pack should be increased near apart from the position of inward at both ends 1/4th time.Further, under situation about being grounded over against an end (or two ends) of walking crosswise (or file) of walking crosswise (or file) that will experience the row electrical reset, if the walking crosswise of electrical reset (or file) of will going is that the voltage that is added to this power pack should be diminished near this earth terminal.If above-mentioned walking crosswise (or file) is away from this earth terminal, institute's making alive should be strengthened.
Consider that device is arranged on the situation in the one dimension ladder shape structure, if power pack is placed in a position of an end of this ladder shape row, and earthing position is placed in the other end, and then when near the device of electrical reset feeder ear, the voltage that adds to power pack is reduced.When electrical reset during near the device of earth terminal, the voltage that adds to power pack increases.When if power pack and grounded part place an end of this ladder shape row homonymy, then adding to when carrying out the electrical reset of device near two ends borrows the voltage of electricity part to reduce, and when carrying out the electrical reset of device near this ladder shape row center, the voltage that adds to power pack increases.If power pack and grounded part are placed on each position at trapezoidal capable two ends, then when carrying out the device electrical reset near the two ends and when carrying out the electrical reset of device, being added to the voltage decreases of borrowing the electricity part near centre bit.When the electrical reset of device is carried out in 1/4th position apart from two ends, the voltage that is added to power pack increases.
More particularly, be that (k, when a device of n) locating carried out the electrical reset of device, (k, voltage n) was just enough to be added to V0 of this power pack according to following equation for example to address in the simple matrix.
V0(k，n)＝C′*〔1+K*r
y/R+n*(N-n+1)*r
x/R〕 (23)
(wherein C ' is a constant)
To do compensation and to reach a constant voltage for the voltage distribution of formula (1).Wherein C ' determines the experiment optimum value.Further, for detecting the address of carrying out the electrical reset device, the impedance of measuring between power pack and grounded part just has been enough to.Can utilize one or more pulses that have the group electrical reset pulse of fixed pulse height and its voltage is lower than the voltage of this electrical reset pulse method between several groups of being inserted into to carry out the measurement of impedance.An example of pulse application is seen Figure 23.Wherein T1 is 1 μ s～10ms grade, and T2 is 10 μ s～100ms grade, and N represents that 1～1000 pulse and V are the grades at 0.1V.
If the number (number of impedance measurement) of group is a very little value, the program of electrical reset control then is simple, and the time that is used for the whole row of electrical reset will be shortened.On the other hand, if the number of group is a bigger value, the variation aspect the electrical reset condition between device can be retained as in a small amount.
It should be noted that the method that adds electrical reset pulse and detection means address is not limited to said circumstances, as long as rigid condition is used, the detection of address of devices can be abandoned.
With reference to figure 2A and 25A, B, at first describe the image processing system that has adopted an above-mentioned electronic source construction and be used for showing or similar target with simple matrix design.Figure 24 is the basic block diagram of this image processing system of expression, and Figure 25 A and 25B represent fluorescent film.
Being shown among Figure 24 is an electron source substrate 111, thereon by above-mentioned method construct electron emitting device; The back plate 241 of fixed substrate 111; The header board 246 of the metallic support 243 that has fluorescent film 244 and on the inner surface of glass substrate 243, form; With a supporting construction 242.Back plate 241, bracing frame 242 and header board 246 be all at first by coated with glass and so on thing, is positioned in atmosphere or the nitrogen environment to be no less than 10 minutes with 400-500 ℃ of roasting the burning, to realize sealing and to constitute a tank 248 again.
In Figure 24, the electron emission part of digital 247 corresponding diagram 1.Numeral 112,113 expressions are connected to the right x direction lead-in wire and the y direction lead-in wire of device electrode of this surface conductive electricity ballistic device.If device electrode and lead-in wire are with duplicate material, the lead-in wire of receiving device electrode in this situation also is known as device electrode.
As mentioned above, glass bulb 248 is to be formed by panel 246, bracing frame 246 and back plate 241 structures.Yet because providing of plate of back mainly is the effect that is used to strengthen substrate 111, thereby if substrate 111 itself has enough intensity, it just can omit.Bracing frame 242 can directly be welded on the substrate 111, thereby glass bulb 248 can be made of header board 246, bracing frame 242 and substrate 111.
Figure 25 A and 25B show fluorescent film 244.If device just is used for monochrome, this fluorescent film 244 just only contains fluorescence.Yet in the situation that is used for colored fluorescent film, this fluorescent film comprises a black electric conducting material 251, is called black streaking or black matrix, and fluorescence 292.The purpose that this black streaking or black matrix are provided is by means of increasing the coating part of deceiving between fluorescence 252 so that metallic support and analog are so unshowy, it is for showing a colored fluorescence that shows necessary three primary colors, and has suppressed the decrease of contrast that caused by the reflected energy in the exterior light at these fluorescent film 244 places.As for the material that constitutes this black streaking, can utilize its main component is the material of graphite.Yet this is not construed as limiting the present invention, and any material only allows seldom to walk as long as possess conductivity or the material of light reflex all can adopt.
As for the method with fluorescence coating glass substrate 243, no matter be monochrome or colored the demonstration, precipitation and the method for printing are all feasible.
The inboard of fluorescent film 244 has metal backing 245 usually.The purpose of this metal backing 245 is to improve brightness by the part of fluorescent emission that the inner surface of panel one side is pointed in reflection, effect as an electrode, in order to applying an accelerating voltage to electron beam, and prevent the destruction that anion blast that fluorescence is subjected to producing causes in glass bulb.This metal backing is to implement smoothing processing (common name work " film forming ") again in the inner surface of fluorescent film after fluorescent film forms, and constitutes with aluminium (Al) thereupon vacuum deposition again.
For improving the conductibility of fluorescent film 244, in situation about having, its header board 246 has the transparency electrode (not shown), in these film 244 outer surface sides.
Color fluorescence thing of all kinds and electron emitting device when stating operation on the implementation, require to carry out good contraposition, because under the situation that colour shows, must be mutual correspondences.
By the pipeline (not shown) of finding time tank 248 is evacuated down to 1.333 * 10
-5The degree of handkerchief, sealing thereupon.Also have the situation that adopts absorbent to handle, with the vacuum state after the maintenance sealing.The processing of the absorbent of this just precalculated position (not shown) that absorbent is placed on this glass bulb 248, because it is subjected to such as resistive heating or the just heating of the addition method of the high-frequency heating before or after envelope is close, thereby makes this absorbent form the vacuum deposition film.The main component of this absorbent has Ba etc.For instance, because the absorption of this vacuum deposition film can maintain 1.333 * 10
-3～1.333 * 10
-5The vacuum magnitude that handkerchief is such.
With in the image display apparatus of the present invention as described above, by external connection end D
Ox1～D
Oxm, D
Oy1～D
Oyn, voltage is added to each electron emitting device.To be added to metal backing 245 or transparency electrode (not shown) greater than the high pressure of some Kv by high pressure connection terminal HV, with accelerated electron beam.The auxilliary fluorescent film 244 of penetrating of this electronics, thus activate the emission that fluorescence is light, with displayed image.Should be noted that the outer electrode D of this glass bulb
Ox1～D
OxmAnd D
Oy1～D
OynReceive D respectively
X1～D
XmAnd D
Y1～D
Yn
Above-mentioned parts are needed for constituting the best images formation device that uses in demonstration or similar device.Some specific features of this device for example constitutes the material of various assemblies, is not limited to top description.Can correctly select material and parts to use to make it a being suitable for image display apparatus.
Refer now to the image processing system that Figure 21 describes the electron source with above-mentioned ladder shape design.
Figure 21 is equipped with a plurality of planar structures of arranging an image processing system of electron source with ladder shape.The different of image processing system of arranging with the simple matrix of formerly describing are that gate electrode is provided between electron source (substrate S) and the panel.The others of two devices that are made of same components are identical, and are provided with in same mode.
Gate electrode GR (or being referred to as controlled electrode) is provided between substrate S and the panel FP.This grid can be modulated the electrons emitted bundle by surface conductive electricity ballistic device institute.For example, the grid of Figure 21 has circular hole Gh, and the corresponding device in every hole is so that be transmitted into the walking crosswise of device of arranging perpendicular to this ladder shape and the strip shaped electric poles of installing with electron beam.Gate shapes and the position of being placed thereof need not with shown in Figure 21 the same.In addition, several launch holes are arranged in some cases and form the perforate of sieving shape.And grid can be provided in the edge of surface conductive electron emission device or near the position at edge.
The electrode of electron source and grid be connected at this glass bulb external control circuit.
In image processing system of the present invention, the visual modulation signal of the delegation of one images, to be synchronized with the mode of the Continuous Drive (scanning) that device walks crosswise, side by side being added to one of grid walks crosswise, one of moment is walked crosswise, thereby utilize the radiation of each electron beam control fluorescence, and show the delegation of an image a moment.
Be used to carry out the circuit preferred example of display operation, wherein the display panel that is generated as stated above will be described as follows as a graphics device.
The block diagram of Figure 22 shows an image processing system, and it constitutes has a plurality of electron radiation devices to be positioned in the simple matrix form that method generated that adopts the present invention in the electron source that adopts.Image processing system is looked to show based on the TV of ntsc television signal is apparent as drive circuit.In Figure 22, display plane of numeral 221 expressions, the 222nd, scanning circuit, the 223rd, control circuit, the 224th, shift register, the 225th, line storage, the 226th, sync separator circuit, and 227 are modulation signal generators.In addition, Vx and Va represent the dc voltage source.
Each functions of components will be described in order.At first, display panel is through meeting end D
X1-D
Xm, connect the end D
Y1-D
YnAnd a high pressure connection terminal Hv receives external circuit.Be used for Continuous Drive sweep signal (be carved with for the moment and walk crosswise (N device)), be installed in a plurality of electron beam sources of display panel inside, walk crosswise to be received with m and hold D with the surface conductive electron emission device group that is referred to as to organize of the matrix line form of n file
X1-D
XmBeing used for controlling modulation signal by the output electron beam of each device of the selected surface conductive electron beam emitter spare of walking crosswise of sweep signal is added to and meets end D
Y1-D
YnA dc voltage, for example 10KV delivers to high pressure connection terminal Hv from dc voltage source Va.This dc voltage is an accelerating voltage, is used for the electron beam that is provided by surface conductive electricity ballistic device is provided enough energy, to activate fluorescence.
Scanning circuit 222 is now described.
There is M switching device (S1 to Sm among Figure 22 represents) scanning circuit 222 inside.Each switching device or select the output voltage V x of DC power supply or select Ov (ground level), and meet end D with what selected voltage was electrically connected to display panel 221
X1To D
XmCorresponding one.Though switching device S1 to Sm is that the control signal Tscan that exports with control circuit 223 is that operate on the basis, might realize this conversion equipment easily in practice, for example by making up conversion equipment such as FETS.
In the present embodiment, characteristic (electronics emission threshold voltage) according to the surface conductive electron emission device, this DC power supply Vx determines, so that export a such constant voltage, promptly this voltage adds to one currently not have the device of scanning will fall to pressing this electronics to launch below the threshold voltage.
Based on the picture intelligence from the outside input, control circuit plays 223 to coordinating each parts, to present a suitable demonstration.Based on from below with the synchronizing signal Tsync of the sync separator circuit 226 addressed, control circuit 223 produces control signal Tscan, Tsft and Tmry, delivers to each parts.
Sync separator circuit 226 is isolated a synchronizing signal composition and a luminance signal composition from the ntsc television signal of outer input.If adopt frequency separation circuit (filter), as known in the art, circuit 226 can easily be constituted.Although as known, the synchronizing signal of being separated by synchronizing separator circuit 226 comprises a vertical synchronizing signal and a horizontal-drive signal, and at this for simplicity, these signals are all represented by signal Tsync.For the sake of simplicity, from the isolated image brightness signal composition of aforesaid TV signal with the DATA signal indication.This signal is added to shift register 224.
The DATA conversion of signals that shift register 224 is used for importing with the order serial of time becomes parallel signal of each row of image.This shift register 224 is operated according to the control signal Tsft from control circuit 103.(promptly this control signal Tsft can be described as the shift clock of this shift register 224).The serial/parallel translation data of the delegation of image (corresponding to electron emitting device N number purpose driving data) is exported from this shift register 224, as N parallel signal ID
1-ID
n
Line storage 105 is storage devices, only pictorial data is stored a required time interval with delegation.According to the control signal Tmry from control circuit 223, line storage 105 is correspondingly stored ID
1-ID
nContent.The content of being stored is used as output I '
D1-I '
DnAnd deliver to modulation signal generator 227.
This modulation signal generator 227 is signal sources, is used for according to pictorial data I '
D1-I '
DNEach drive signal of independent content modulomenter surface conduction electron ballistic device.The output signal of modulation signal generator 227 is through meeting end D
Y1-D
YnBe added to surface conductive electron emission device in display panel 221 inside.
As described in once more, electron emission device of the present invention has the following essential characteristic that relates to emission current Ie, as mentioned above, specifically, this electronics emission has the threshold voltage Vth of a clear definition, and just just produces the electronics emission when the voltage greater than this threshold voltage Vth is added into.
Furtherly, so long as the threshold voltage that voltage is launched greater than electronics, also alive variation changes this emission current according to this device.Also have such situation, promptly the value of electronics emission threshold voltage Vth wherein and the intensity of variation that relates to the alive emission current of institute are reformed by the material of this electron emission device of change, structure and preparation method thereof.In any situation, all can be sure about obtains following conclusion:
Specifically, be added in the situation of a device, a voltage that is lower than electronics emission threshold value was added, also do not have the electronics emission and occur at the voltage of a chopping.Yet, in a situation about being added into, electron beam output is just arranged greater than the voltage of electronics emission threshold value.At first, might control the intensity of output electron beam by the peak value Vm that changes impulse waveform.Secondly, might be by changing the total amount of electric charge that pulse duration Pw controls the output electron beam.
Therefore, voltage modulated method and pulse-width modulation method can be referred to as with the method for the corresponding to modulation electron emitting device of input signal.Be to carry out voltage modulated, adopt the method for voltage modulated,, produce the potential pulse of fixed width according to this method as the circuit of modulation signal generator 227, but the peak value of pulse by with the consistently suitably modulation of input data.
In order to realize pulse-width modulation, adopted a kind of pulse duration modulation method as the circuit of modulation signal generator 227, according to this method, produce the pulse of constant peak, but the width of potential pulse by with the consistently suitably modulation of input data.
By the advantage of above-mentioned sequence of operations, utilize display panel 221 to show TV and show.Although be not particularly related to, shift register 224 and line storage 225 can be digital or analog.Importantly, the parallel/serial conversion of picture intelligence and to the storage of switching signal be to carry out with a predetermined speed.In the situation that adopts digital scheme, be necessary to convert the dateout DATA of sync separator circuit 226 to digital signal.If the output at sync separator circuit 226 provides an A/D converter, then be easy to realize this conversion beyond doubt.And, according to line storage 225 be numeral or simulation, as the circuit of modulation signal generator 227 undoubtedly can be slightly different.In other words, under the situation of digital signal, if modulation is to adopt the voltage modulated method, a kind of known D/A change-over circuit can be used in the modulation signal generator.If necessary, an amplifier or similar circuit may be utilized.In its modulation is the occasion that adopts pulse duration modulation method, modulation signal generator 227 if with high-speed oscillator, be used for counter oscillator output wave figurate number counter, to be used for comparator that counter output valve and above-mentioned memory output valve are compared combined and make, this is easy for those skilled in the art.If necessary, can come the signal of voltage amplification, become the driving voltage of surface conductive electron emission device with an amplifier from the pulse-width modulation of comparator.
Under the situation of analog signal, if modulation is the method that adopts voltage modulated, one is adopted known amplifier circuit such as operational amplifier to can be used in the modulation signal generator 227.If necessary, can also utilize the circuit of level shift and so on.In modulation is the occasion that realizes with pulse duration modulation method, can adopt known voltage controlled oscillator (VCO).If necessary, also can utilize an amplifier circuit to become the driving voltage of surface conductive electron emission device in order to the signal of this pulse-width modulation of voltage amplification.
Introduce example of the present invention now in detail.
(example 1)
This example is the example of an electron source, several is wherein arranged according to method A-1 surface conductive electricity that make, that be arranged in simple matrix form ballistic device.
Figure 26 is the plane graph of an expression electron source part.Figure 27 is a sectional drawing along the A-A ' line among Figure 26.In Figure 26 and 27, identical parts are represented with identical label.Wherein number 261 is represented a substrate, the wiring (being called " low " wiring) of the corresponding x direction of Dx among 262 expressions and Figure 24, the wiring (being called " height " wiring) of the corresponding y direction of Dy among 263 expressions and Figure 24.Digital 264 expressions include the film of an electron emission part.Numeral 272,273 expression device electrodes, the insulating barrier between 274 presentation layers, 275 are one is used for and device electrode 272 and the contact hole that contacts than low wiring 262.
The step that refers now to Figure 28 A-28H is introduced its manufacture method in detail.
(step a)
Have the Au that Cr that thickness is 50 and thickness is 6000 and sequentially be formed on the substrate 261, utilize to sputter at one and purify and form the silicon oxide film that reaches 0.5 μ m thickness on the soda-lime glass plate by vacuum-deposited method.Subsequently, photoresist (AZ1370 is made by Japanese Hoechst company) revolves machine by one and adds rotationally and dried immediately.The photomask image is exposed thereupon and is rasterized, to constitute low wiring 262 resistive patterns.The Au/Cr film of precipitation is carried out wet corrosion again, to form the low wiring 262 of desired shape.
(step b)
Subsequently, utilize the RF sputtering sedimentation to become to have 0.1 μ m thickness silica interlayer insulating film 274.
(step c)
Produce the photoresist pattern that is used to form contact hole 275 in the silicon oxide layer that in by step b, deposits, and utilize this photoresist pattern this interlayer insulating film to be etched away, to constitute contact hole 275 as mask.For example, the engraving method in past is to adopt CF
4And H
2The RIE of gas (reactive ion etching).
(steps d)
Subsequently, for obtaining 272,273 and gap L 1 between device electrode of device electrode, utilize photoresist (RD-2000N-41, by the Kasei K.K. of Hitachi make) to form a pattern, utilize vacuum moulding machine respectively Ti and Ni sequentially to be deposited the thickness of 50 and 1000 subsequently.Utilize organic solvent to remove the photoresist pattern and stay the deposited film of Ni/Ti, to form the device electrode 272 and 273 of gapped L1 therebetween.Gap herein is 2 μ m and the width W 1 of terminal electrode W1 is 220 μ m.
(step e)
On device electrode 272,273, form after the photoresist of upper electrode 263, Ti and Au respectively vacuum moulding machine to the thickness of 50 and 5000 .By carrying out left selection mode unnecessary portions is removed.To form the upper strata wiring shape of institute's phase.
(step f)
Figure 29 is a partial plan layout, represents a mask of film 271, is used for forming according to this method the electron emission part of each surface conductive electron emission device.This mask has gap L 1 and the contiguous opening between device electrode.By means of using this mask, the Cr film with thickness 1000 is formed by vacuum moulding machine and it is formed.Organic Pd (CCP4230 is made by Okuno Seiyaku K.K) revolves the machine turn by one and is added to this Cr film, implements 10 minutes heating and sintering processes subsequently under 300 ℃ of conditions.The film that is formed for this electron emission device of electrical reset thus comprises meticulous particulate, and its fundamental mechanism is to have the Pd that thickness is 100 .The epidermis electronic values is 5 * 10
4Ω.As previously mentioned, the film of this finely particulate being polymerized by numerous finely particulates.As for its fine structure, this finely particulate is not subject to the particulate of independent distribution; This film can be such film, and promptly finely particulate wherein is contiguous mutually or covers (promptly being aligned to little island).The diameter of finely particulate is meant those finely particulates that particulate form can be identified in above-mentioned state.
(step g)
Be used to form the Cr film 276 of electron emission part and the film 277 usefulness acid etching agent of sintering and carry out Wet-type etching, to form institute's phase pattern.
(step h)
Such pattern will apply photoresist to the part that forms outside the contact hole, and utilizing vacuum moulding machine afterwards is respectively that Ti and the Au of 50 and 5000 is deposited in proper order with thickness.By the method for removing, remove the photoresist that does not need part, and contact hole 275 is left and is full of attitude.
Therefore, by carrying out aforesaid processing, on same insulating substrate 261, form low line 262, interlayer insulating film 274, higher line 263, device electrode 272 and 273 and the film 277 that is used to form electron emission part.Substrate above-mentioned is called an electron source substrate, and it is not by electrical reset.
Subsequently, introduce detailed example, wherein adopted the electron source substrate that not handled by electrical reset, one by carrying out the electron source of structure according to electrical reset processing of the present invention.
Figure 30 is the figure that describes present embodiment, shows the situation of electrical connection, and electrical reset wherein is a part that is added to one group of surface conductive electron emission device, and these devices are the forms that connect into above-mentioned simple matrix.For simplicity, have only 6 * 6 surface conductive electron emission devices to be illustrated the form that is connected to simple matrix.Yet, be one 300 * 200 matrix according to present embodiment.
In order in description, to distinguish different surface conductive electron emission devices, in Figure 30, so that (form is D (1,1) for x, coordinate representation y), D (1,2) ... D (6,6).
And, in Figure 30 with D
X1, D
X2D
X6And D
Y1, D
Y2D
Y6Other lead-in wire of branch in the expression simple matrix line.Through terminals P, these wiring are connected matrix with external electric.
In addition, VE represents to have the voltage source that produces the ability that is used for these surface conductive electron emission device required voltages of electrical reset.
Figure 30 shows and is used for 300 devices of electrical reset side by side, i.e. D (1,3), D (2,3), D (3,3), D (4,3), D (5,3), D (6,3) ... the voltage application process of D (300,3).As shown in figure 30, ground level, promptly 0V receives lead-in wire D
X3From one of voltage source V form for example the voltage of 6V be added to except that D
X3Directions X lead-in wire outside the lead-in wire, i.e. D
X1, D
X2, D
X4, D
X5, D
X6D
X200Simultaneously, the voltage from voltage source V form is added to wiring D
Y1, D
Y2, D
Y4, D
Y5, D
Y6D
Y300
The result is that the output voltage of voltage source V form is added to device D (1,3), D (2,3), D (3,3), D (4,3), D (5,3), D (6,3) ..., on the D (300,3), these devices are to choose in the device that a plurality of matrixes connect.Therefore, these 300 devices are by with the parallel mode electrical reset.
As for the device except that above-mentioned 300 devices, an equal current potential (output potential of voltage source V E) of reality is added to the two ends of each device.So that the voltage on each device is approximately 0V.In fact, this means that these devices do not carry out electrical reset.The film that comprises electronic emission material is not subjected to loss and is not destroyed.
The electron emission part that contains finely particulate that constitutes like this, its basis are the Pd (palladium) that is in the diffusion attitude.The mean particle diameter of this particle is 30 .
The resistance of each device approximately is 1K Ω, and the resistance (at directions X) of each device of low lead-in wire approximately is 0.03 Ω, and the resistance (with the y direction) of each device of low lead-in wire approximately is 0.1 Ω.
As previously mentioned, be in the occasion of a side, the formula (12) of following form arranged at power pack:
(Nx*Nx-8N
x)*r
x＝2628，〔N
y*N
y-8N
y)*r
y＝3840，
Therefore, although device count is big, this device should be carried out electrical reset on the x direction.
In order to know the characteristic of several flat surface conduction electron ballistic devices that are made of preceding method, its electron emission characteristics is measured by the measurement mechanism of Fig. 9.
As for measuring condition, the distance between anode and surface conductive electron emission device is 4mm, and anode potential is changed to 1KV, and the vacuum degree in glass bulb is set to 1.333 * 10 when the measurement of electron emission characteristic
-4Handkerchief.
In the present embodiment, the emission current Ie of typical surface conductive electron emission device begins rapid rising from the device voltage of 8V.When the device voltage of 14V, device current If is 2.2mA, and then emission current Ie is 1.1 μ A.Electronic transmitting efficiency=Ie/If% is 0.05%.
According to present embodiment, if the variation in electronic transmitting efficiency is less than 7%, then show to have obtained to be actually uniform characteristic for whole devices.
(example 2)
Image processing system in this example of introducing is made of the electron source substrate of use according to the structure of example 1, and it will not be subjected to electrical reset and handle.This will introduce with reference to Figure 24, Figure 25 A and 25B.
Not handled by above-mentioned electrical reset by arranging the electron source substrate 111 that 300 * 200 devices obtain, these devices are fixed on the plate 241 of back, subsequently, this panel 246 (containing fluorescent film 244 image forming parts and the metal backing 245 on the inner surface of glass plate substrate 243) is placed on the position that exceeds electron source substrate 111 5mm through bracing frame, and, the binding site of panel 246, bracing frame 242 and back plate 241 is coated with earlier with fritting glass, and then in 400 ℃ atmosphere sintering 10 minutes to realize sealing.The fixing fritting glass that also utilizes of plate is realized behind 111 pairs of the electron source substrates.
If device is monochromatic the use, fluorescent film only contains fluorescence.Yet in the present embodiment, this fluorescent film 244 constitutes by prior formation black streaking (as Figure 25), and has applied the coating of various color fluorescence things between striped.As for the material that constitutes black streaking, used material major part is a graphite.The method of being coated with is used to fluorescence is coated on the glass substrate 244.
Metal applies the inboard that film 246 is provided at fluorescent film 245, and it is made a smoothing processing to its fluorescent film inner surface and again Al is deposited and forms with vacuum deposition method after fluorescent film constitutes.For improving the conductibility of fluorescent film 245, its header board has the transparency electrode in this film 245 outer surfaces one side in some cases.Yet in the present embodiment, because applying film 246 with this metal, list just obtained satisfied conductibility, so this electrode does not adopt.When carrying out above-mentioned seal operation, because must the color fluorescence thing is corresponding with the surface conductive electron emission device in the situation that colour shows, so will well locate.
Vacuumize through an evacuation tube (not shown) by a vacuum pump by environment in the glass bulb of above-mentioned formation.1.333 * 10
-3After the vacuum degree of the handkerchief order of magnitude reaches, voltage is passed through outside terminal D according to the mode of example 1
OX1-D
OXm, D
Oy1-D
OynBe added on the device electrode, thereby above-mentioned electrification is handled (electrical reset processing), to form electron emission part and to constitute the surface conductive electron emission device.
Subsequently, the evacuation tube (not shown) is 1.333 * 10
-4Heat by a gas burner during handkerchief vacuum degree, thereby by its fusing is sealed glass bulb.
At last, carrying out absorbent handles with the vacuum after the maintenance sealing.Specifically, the Ba getter, it is placed in the precalculated position (not shown) in the image processing system, is heated with the high-frequency heating method after encapsulation process, thereby forms a vacuum deposited film.
As the above-mentioned image processing system of finishing of the present invention in, sweep signal and modulation signal by the signal generation device (not shown) through external terminal D
Ox1-D
Oxm, D
Oy1-D
OynBe added to each of surface conductive ballistic device, thus emitting electrons.To be added on the metal backing 245 greater than several kilovolts high pressure through HV Terminal Hv, thus accelerated electron speed.Thereby electronics causes the bombardment to fluorescent film 244, becomes the emission attitude thereby activate fluorescence, with displayed image.
In the image processing system routine according to this, confirmed that its device property is uniform, and in uniformity aspect the brightness of displayed image big improvement has been arranged, can be formed uniformly because several surface conductive electron emission devices are wired as the form of simple matrix.
In practice, have two display unit that constitute as above-mentioned method.In a device, power pack only is provided at a side, and the row electrical reset is to carry out on directions X.In another device, power pack only is provided at a side, and the row electrical reset is to carry out on the Y direction.One constant voltage is added to each pixel, and 5Kv is added to HV Terminal Hv and carries out brightness measurement.Though the brightness scrambling that the electrical reset on directions X causes is less than 7%, the brightness scrambling that the electrical reset on the Y direction causes is 15%.In other words, should understand that the direction of the capable electrical reset that should carry out can be before electrical reset and determined.
(example 3)
What describe below is to use a kind of image processing system of constructing according to method A-1 of the present invention in example 2 identical modes.Yet, in this example, each the device quantity, wiring and thickness shape all with example 2 in different.Utilize formula construction electron source base board, wherein a N of having described
x=50, r
x=0.3 Ω, N
y=50, r
y=0.1 Ω, R=1K Ω.In addition, this image processing system has a kind of like this structure, and wherein electric current can the two ends feed-in from connecting up with X and Y direction.
Be provided at when power unit under the both sides situation of each lead, have following formula as described above:
(N
x*N
x-24N
x)*r
x＝39，(N
y*N
y-24N
y)*r
y＝18
That is, be appreciated that the surface conductor electron emitting device should stand electrical reset in the Y direction and handle.
As shown in example 2, two panels that stand the processing of two kinds of methods (being the capable electrical reset method of x direction and the capable electrical reset method of y direction) electrical reset are compared.Can find that the former is 12% for an irregularity in brightness, and the latter is less than 6%.Very clear, carry out the electrical reset processing in the y direction and have less irregularity in brightness.In other words, should be able to be determined before electrical reset be very clearly to the direction of carrying out the row electrical reset.
(example 4)
Now the processing unit of carrying out the processing of the method according to this invention A-1 electrical reset is described.
Figure 31 shows the example of the circuit design of a formation processing unit.Electron source base board of numeral 311 expressions among Figure 31, it is handled without undergoing electrical reset.Be to obtain by the form wiring of surface conductive electron emission device that m * n is constructed through the processing that is similar to example 1 by a simple matrix.Switching device matrix of numeral 312 expressions, electrical reset pulse generator of 313 expressions, and control circuit of 314 expressions.
Electron source base board 311 is through terminal D
X1-D
Xn, D
Y1-D
YmBe electrically connected to external circuit.Terminal D
X1-D
XnBe connected with switching device matrix 312, and terminal D
Y1-D
YmBe connected to the output of electrical reset pulse generator 313.
Switching device matrix 312 inside have n switching device S
1-S
nEach switching device is used for terminal D
X1-D
XnEach terminal be connected to the output of electrical reset pulse generator 313 or be connected to ground level.
Each switching device is according to the control signal SC1 operation that is produced by control circuit 314.
Timing pulse generator 313 is according to the control signal SC2 output voltage pulse that is produced by control circuit 314.As mentioned above, control circuit 314 is circuit that are used to control each switching device operation and 313 operations of control electrical reset pulse generator.
Various functions of components will be discussed to whole operation as mentioned above now.
At first, before electrical reset, the control of all switching device response control circuits 314 of switching device matrix 312 is connected to the ground level side.And the output voltage of electrical reset pulse generator 313 also is maintained at ground level 0V.
Subsequently, for selector in capable delegation and make them stand electrical reset to handle, as the description relevant with Figure 30, control circuit 314 produces control signal SC1 in such a way.Promptly except those with stand switching device that row that electrical reset handles is connected, all switching devices in the switching device matrix 312 all will be connected to a side of electrical reset pulse generator 313.(in example shown in Figure 31, all switching devices of removing S3 all are connected to a side of electrical reset pulse generator 313).
Then, control circuit 314 responds this signal to the electrical reset pulse generator 313 SC2 signal that transmits control signal, and generator 313 produces the potential pulse that is suitable for electrical reset.
If the electrical reset of the row of selected device is finished, control circuit 314 produces control signal SC2, and it makes electrical reset pulse generator 313 stop pulses take place and makes output voltage become 0V.In addition, control circuit 314 produces control signal SC1, all will be connected to ground level one side so that be included in all switching devices of switching device matrix 313.
Realized the electrical reset of the row of optional device by means of the advantage of above-mentioned operating process.By utilizing similar process to make other row electrical reset of device, might make equably with connect up thereon all device electrical resets on the substrate of m * n surface conductive electron emission device of simple matrix form.
In this example, electrical reset is handled and is to use the simple matrix substrate with 100 * 100 devices to carry out by the voltage waveform pulse of kind as shown in Figure 8 is provided to selected device.In addition, in this example, pulse duration I1 is that 1 millisecond of pulse spacing T2 is 10 milliseconds, and the peak value of square wave (at electrical reset peak pressure constantly) is 5V, and about 1.333 * 10
-4Electrical reset continues 60 milliseconds under the vacuum of handkerchief.
When the measurement mechanism that utilizes Fig. 9 was measured a typical device in the electron source of a structure, people can find that emission current Ie begins device voltage from 8V voltage and sharply increases.Further, under the device voltage of 14V, device current If is 2.4mA, and emission current Ie is 1.0 μ A.Electronic transmitting efficiency η=Ie/If (%) is 0.04%.
When the variation of fission form occurring, the consistency of electronic transmitting efficiency between above-mentioned each device will be can not get.Yet according to electrical reset device of the present invention, it is very little that the variation in the actual voltage that offers each device becomes row in the moment that electrical reset is performed, and as device property, the variation between each device in the electronic transmitting efficiency is held and is lower than 10%.
(example 5)
To describe a special example below, and wherein handle in plate execution electrical reset and produce an electron source based on above-mentioned device A-2, a utilization electron source the same with structure in the example 1, described electron source base board is handled without undergoing electrical reset.
Figure 18 is a figure who describes present embodiment, and it shows when electrical reset and is applied in to the electrical connection during with one group of surface conductive electron emission device of simple matrix form wiring a part of by top describing mode.
According to the design of Figure 18, electrical reset is by an electrical reset power supply (electromotive force of V1 or V2) is connected to row wiring (D
X1-m) and column wiring (D
Y1-n) carry out.At this moment, the K bar lead electromotive force V2 that is provided in the whole capable lead of electromotive force V1 is provided to the capable lead of m-K bar; Electromotive force V2 is provided for the L bar lead in the whole column wire, and electromotive force V1 is provided for n-L remaining column wire.As a result, the individual device of K * L+ (m-K) * (n-L) in all surfaces conduction electron ballistic device is selected.The voltage that reality is V2-V1 (being 6V in the present embodiment) is provided for selected surface conductive electron emission device, to carry out electrical reset.
With regard to the device except above-mentioned selected device, the electromotive force of a phase such as basic is applied on the electrode at two ends of these devices, is approximately 0V so that cross over the voltage of each device.Nature this means that these devices do not stand electrical reset.In addition, be used for can not wearing out and be damaged to the film of electron emission part electrical reset.
In addition by the electromotive force V1 and the V2 that are connected with column wiring (or row wiring) are exchanged, in a similar fashion to before not sent the remaining surface conductive electron emission device of getting to carry out electrical reset.
For the characteristic of the quantity of the surface conductive electron emission device of clearly pressing said process structure, m, n is set at 100, and K and L are set at 50, utilize the measurement mechanism of Fig. 9 that electron emission characteristic is measured.
With regard to measuring condition, making distance between anode and the surface conductive electron emission device is that the electromotive force of 4mm, anode is 1KV, and the vacuum degree in the moment vacuum-pumping container that electron emission characteristic is measured is set at 1.333 * 10
-4Handkerchief is as in the above-mentioned example.As a result, electronic transmitting efficiency η=Ie/If (%) is 0.04%.In addition, for all devices, obtained the characteristic of basically identical.For example, the variation among the electronic transmitting efficiency η is generally less than 8%.
(example 6)
Referring now to Figure 24 the image processing system of handling structure by the enforcement electrical reset the same with Fig. 5 is described.
Though the arrangement of structure and method and the previous example of describing 2 is similar, but here, do not stand image processing system that electrical reset handles and be to utilize with connect up a thereon electron source base board of 100 * 100 devices of a simple matrix form, promptly the same with the substrate of constructing among Fig. 5 base plate structure becomes.
More than the environment of describing in the glass shell of realizing is excluded through the blast pipe (not shown).Obtaining about 1.333 * 10
-3After the handkerchief vacuum degree, according to voltage of situation of example 5 through outside terminal D
Ox1-D
Oxm, D
Oy1-D
OynBe added in the two ends of device electrode, apply above-mentioned charging process (electrical reset processing) thus, so that electron emission device electrical reset and structured surface conduction electron ballistic device.
Subsequently, about 1.333 * 10
-4Under the handkerchief vacuum degree, utilize a coal gas pulverizing jet to the heating of blast pipe (not shown), thereby by making its fusing with housings close.
At last, carry out absorbent and handle, so that the vacuum degree after keeping sealing.
In the image processing system of the present invention of above-mentioned realization, by the signal generation device (not shown), sweep signal and modulation signal are through outside terminal D
Ox1-D
Oxm, D
Oy1-D
OynOffer each surface conductive electron emission device, thereby electronics can be launched away.Provide a high voltage by high voltage end Hv, with displayed image.
Show that at image processing system owing to can be formed by unified with a plurality of surface conductive electron emission devices of simple matrix form wiring, so device property is consistent, and the irregularity in brightness of shown image is less than 8% according to this instance constructs.
(example 7)
That will describe below is to use the electron source base board that electrical reset is handled that do not stand according to example 1 structure, by according to carrying out a kind of electron source that electrical reset is handled structure based on the another kind of method of device A-2 of the present invention.
The electrical connection of Figure 33 explanation when the time for half the execution electrical reset in one group of 640 * 400 the surface conductive electron emission device that does not stand the electrical reset processing that connect up with a simple matrix form.
In Figure 33, D
X1, D
X2..., D
X400And D
Y1, D
Y2..., D
Y640Represent the lead separately of simple rectangular wiring.In addition, V1, V2 represent to be used to produce the power supply of electrical reset pulse.
Figure 33 has illustrated at the device of representing with black and has stood the method that a kind of voltage applies under the situation of selectable electrical reset.Specifically, V1 is an earth potential, and V2 is electromotive force vform.A voltage (being vform) that is similar to V2-V1 is added in the two ends of black device, and approximately 0V is applied on the white device.As a result, the black device stands selectable electrical reset, and white device remains unchanged.
Figure 34 shows a kind of circuit design of utilizing said method execution electrical reset to handle, the electron source base board that numeral 341 expressions obtain by the surface conductive electron emission device that does not stand the electrical reset processing with 640 * 400 of simple matrix form wirings.Numeral 342 is represented a switching device, and 343 represent an electrical reset pulse generator, and 344 represent a control circuit.
Row lead (D
X1, D
X2..., D
X400) in the middle of, odd number group is connected to earth potential, and even number set is connected to the output of electrical reset pulse generator 343.Column wire (D
Y1, D
Y2..., D
Y640) in the middle of, odd number group is connected to the output of earth potential or electrical reset pulse generator, and even number set is connected to the output or the earth potential of electrical reset pulse generator.Yet not all column wire all is connected to the electrical reset pulse generator simultaneously.
At first, before electrical reset began, all leads all remained on earth potential.Subsequently, control circuit 344 sends a signal to switching device 342, so that the odd number group of column wire is connected to the output of electrical reset pulse generator 343, and the even number set of this column wire is connected to earth potential.Control circuit 344 sends a signal then to electrical reset pulse generator 343, so that carry out electrical reset.The electrical reset pulse is applied in to selected surface conductive electron emission device.At this moment, offer as an electrical reset electric current of 320 devices of half in 640 surface conductive electron emission devices of line direction and flow into each row lead, and the electric current that offers 200 devices flows into each column wire.
When the electrical reset of all selected devices is finished, switching device 342 is converted, the odd column lead is connected to earth potential, and the even column lead is connected to the output of electrical reset pulse generator 343, thereby remaining device is selected, so that can apply the electrical reset pulse and carry out electrical reset with a kind of similar approach.
In this enforcement, a kind of voltage waveform with kind shown in Figure 8 is provided for selected device, and carries out electrical reset according to above-mentioned process.In addition, in this example, pulse width T 1 is 1 millisecond, and pulse spacing T2 is 10 milliseconds, and the peak value of square wave (at electrical reset crest voltage constantly) is 5V, and about 1.333 * 10
-4Electrical reset is carried out 60 milliseconds under the handkerchief vacuum.
In this example, the temperature that causes owing to the electric current that flows into each lead in electrical reset constantly rises and can be eliminated, and in no case can produce infringement to wiring or substrate.In addition, as shown in figure 33 because the surface conductive electron emission device of a plurality of matrix wirings constitutes with interlace mode, shown in can not produce temperature non, and can carry out electrical reset in good mode.
As a result, as example 5, the measurement of electron emission characteristics shows that electronic transmitting efficiency η=Ie/If (%) is 0.05%.In addition, obtained the characteristic of basically identical for all devices.For example, the variation among the electronic transmitting efficiency η total less than 13%.
In addition, before electrical reset is handled, be similar to the image processing system that example 6 structures design for employing, also can implementing a plurality of surface conductive electron emission devices that electrical reset is handled a simple matrix form of formation wiring uniformly in the image processing system that constitutes by the method routine according to this.As a result, confirmed that device property is consistent, and the irregularity in brightness of displayed image is less than 13%.
(example 8)
Example 1 to example 7 related to a kind of by the wiring present electric current so that an electrical reset voltage is only offered the method for some device from outside terminal.Yet, in this example, use the arrangements of electric connection except that wiring to give each device with current feed by said method B-1.
The method of Shi Yonging can be implemented with above-mentioned ladder arrangement or simple matrix arrangements in this example, and irrelevant with the mode of wiring arrangement.
At first, the process of constructing an electron source will be described with reference to Figure 65, and wherein the surface conductive electron emission device is arranged with the ladder shape and connected.
Form the nickel film with 1000A thickness by vacuum moulding machine on a substrate 651, substrate 651 is to reach a thick silicon dioxide film acquisition of 0.5 μ m by forming by sputter on a pure blue tinted glass plate.Form element electrode 655,656 by photoetching then.
Utilize a mask (Figure 29) with near internal components electrode gap L1 and an opening gap L 1, deposit a chromium film, and make it stand wiring pattern by photoetching to be shaped and to handle with 1000 thickness by vacuum-deposited mode.By a spinner organic palladium (by the CCP4230 of Okuno Seiyaku K.K. production) is spun on the chromium thin film then, after this, 300 ℃ of heating and baking processing of implementing 10 minutes down.
Chromium film on it and film (Main Ingredients and Appearance of this film is a nickel) are etched with the required pattern of formation.So just formed a film 652, it includes a trickle palladium industry as the electrical reset radiating portion.Width W 2 is made into 300 μ m.
Figure 35 multiple electron source that to be a description arrange with multirow, and as the view that utilizes the charging of electrical reset arrangements of electric connection of feature of the present invention.Surface conductive electron emission device of numeral 351 expressions, 1000 such devices are with parallel arranged.Nickel electrode of numeral 352 expressions, it is as the shared wiring of electric current being led to each device.Needle-like copper tip 353 is as the terminal of realizing at a plurality of positions of shared wiring 252 being electrically connected.The block wiring 354 that copper becomes is electrically connected with a copper tip 353 and an electrical reset power supply.Thereby above-mentioned copper tip is arranged like this and is connected into one group totally 332 groups of per three surface conductive electron emission devices.Copper tip and shared wiring 352 bonding contacts, and one offer public wiring 352 to the required voltage of the electrical reset of device from the electrical reset power supply, so that form the slit that becomes each electron emission part.
The cross section of block copper wiring 354 is done greater than 1mm
2, so that the resistance of block copper wiring 354 is less than 1/1000 of the resistance of shared wiring 352 between each device.
If in the slit forms, produce a kind of variation (it be problems of the prior art) as previously mentioned, then can not obtain the consistency aspect electronic transmitting efficiency between the device.Yet, when utilizing electrical reset device of the present invention that electrical reset voltage is provided, be maintained at less than 0.001V in the change in voltage with copper tip (353 among Figure 35) contact portion, as the actual characteristic of each device, the variation of electronic transmitting efficiency is held less than 5% between each device.
(example 9)
Here will describe such example, wherein image processing system is to use and does not stand by the procedure construction identical with example 8 that electron source substrate that electrical reset handles constitutes.To be described with reference to Figure 21 and 60.
At first, under nitrogen environment, carry out the electrical reset of using arrangements of electric connection and handle, and substrate is fixed on the plate of back by mode identical in the example 8.
Figure 21 shows a slab construction of equipping the image processing system of a plurality of electron sources by trapezoidal arrangement.In Figure 21, VC represents the glass bulb that glass is made, and its a part of FP is a panel on the side in front.The transparency electrode (for example) that ITO makes forms at the inner surface of panel FP, and these transparency electrodes are coated with the red, green and blue fluorescent material by mosaic or candy strip.In order not cause accompanying drawing to become complicated, transparency electrode and fluorescent material are represented with PH jointly in Figure 21.
Between every kind of color fluorescence material, can be provided with known " deceiving " matrix or blackstreak in the CRT field, so that on fluorescent material, form a known metal back layer.Above-mentioned transparency electrode is connected with the outside of vaccum case through a terminal EV, so that can apply beam voltage.What apply in this example, is the high voltage of 4KV.
Rear board S is the substrate of multiple electron beam source, and is fixed on the bottom of vacuum casting VC.The surface conductive electron emission device forms and is arranged on this substrate in above-mentioned mode.In this example, it is capable to provide 200 devices.Wiring in parallel has 200 devices in each row.The electrode terminal D that provides in each side of panel alternately is provided two link electrodes that each device is capable
P1-D
P200And D
M1-D
M200Like this, can apply electric drive signal from the outside of glass bulb.
Further, be provided with the grid G R of shape of stripes in the back in the middle of plate S and the panel FP.Grid G R is and vertically disposed 200 electrodes independently of each device capable (promptly in the Y direction).Each grid has an opening Gh, is launched out by this opening Gh electron beam.Opening Gh is round, and each all with the surface conductive electron emission device in one corresponding.Yet in some cases, most openings are to provide with web form.Grid is electrically connected with the outside of housing by electrode terminal G1-G200.As long as these grids can be modulated by surface conductive electron emission device electrons emitted bundle, they needn't be as shown in figure 21 in its locational shape that is placed.For example, grid can be arranged in around the surface conductive electron emission device or the place around close.
In such display floater, become 200 * 200XY matrix with gate configuration by the device of surface conductive electron emission device is capable.Therefore by with device capable to drive (scanning) continuously line by line synchronous, it is capable simultaneously the modulation signal that is used for image delegation to be offered a grid, thereby fluorescent material luminous is controlled so that displayed image line by line with each electron beam.
Figure 53 is the block diagram of the circuit of the explanation display floater that is used to drive Figure 21.It shown in Figure 53 the display panel of Figure 21, with numeral 600 expressions, a decoding circuit 601 that is used for the composite picture signal decoding that enters from the outside, a serial/parallel change-over circuit 602, a row memory 603,604, one timing control circuits 605 of a modulation generating circuit and a sweep signal generation circuit 606.Each electrode terminal of display floater 600 is connected with each circuit.Terminal EV is connected to high voltage source HV, and it produces the accelerating voltage of 10KV, and terminal G1-G200 is connected to modulation generating circuit 604, terminal D
P1-D
P200Be connected to sweep signal generation circuit 606, and terminal D
M1-D
M200Be connected to ground.
Now these functions of components will be described.Decoding circuit 601 is used for composite picture signal is decoded such as the ntsc television signal that is entered by the outer end.This decoding circuit 601 is separated into luminance signal component and synchronization signal components to composite picture signal, exports the former and gives serial/parallel change-over circuit 602 as data-signal Data, and the output latter gives timing control circuit 605 as synchronizing signal Tsync.Especially, decoding circuit 601 is R, G, and the brightness of each color pixel that arrange and display floater 600 is arranged consistently in the B chrominance component, and exports this result continuously and gives serial/parallel change-over circuit 602.In addition, this decoding circuit 601 extracts a vertical synchronizing signal and horizontal-drive signals, and control circuit 605 when exporting these signal feedings.Owing to used synchronizing signal Tsync as a reference, timing control circuit 605 produces various control signals, to adjust the operating time of each component.In other words, timing control circuit 605 output timing controling signal Tsp, Tmry, Tmod and Tscan give serial/parallel change-over circuit 602, row memory 603, modulation generating circuit 604 and sweep signal generation circuit 606 respectively.
Serial/parallel change-over circuit 602 runs continuous samples to the luminance signal Data from decoding circuit 601 inputs according to the timing signal Tsp from timing control circuit 605 inputs, and exports this result and become 200 parallel signal I
1-I
200Give row memory 603.Timing control circuit 605 is given row memory 605 at the data line of image by the instantaneous output write timing control signal Tmry that serial becomes parallel data.In case receive this signal Tmry, row memory storage signal I
1-I
200Content, and it as I '
1-I '
200Export to modulation generating circuit 604.Yet, I '
1-I '
200Be held in the container 603 of being expert at till next write timing signal Tmry input.
According to the brightness data by the delegation of the image of row memory input, modulation generating circuit 604 produces a modulation signal, and it is provided for the grid of display floater 600.Especially, modulation generating circuit 604 as one man simultaneously is applied to terminal G1-G200 to modulation signal with the timing controling signal Tmod that is produced by timing control circuit 605.Modulation signal has adopted the voltage modulated method that changes voltage strength according to the brightness data of image.Yet it is possible adopting the pulse duration modulation method according to brightness data modulation voltage pulse duration.
Sweep signal generation circuit 606 produces the capable potential pulse of device that is fit to drive the surface conductive electron emission device of forming display floater 600.A switching circuit in this sweep signal generation circuit 606 is changed according to the timing controling signal that is produced by timing control circuit 605, thereby or select a suitable driving voltage VE (V), perhaps selectively current potential (that is, 0V), and offers terminal D to selected current potential
P1-D
P200Described VE (V) is by a constant pressure source DV threshold value that produce and that surpassed the surface conductive electron emission device.
According to above-mentioned circuit, drive signal imposes on display floater 600 with a specific timing.That is, amplitude is that the potential pulse of VE (V) is constantly offered terminal D by mentioned order continuously in demonstration of each row of image
P1, D
P2, D
P3On the other hand, constantly at all.The 0V earth potential is connected to terminal D
M1-D
M200Therefore, utilize potential pulse since first row, each device is driven continuously.Driven device divergent bundle.
In addition, with above-mentioned synchronously, modulation generating circuit 604 modulation signal that applies the delegation of image simultaneously gives terminal G
1-G
200The conversion synchronization of modulation signal and sweep signal is changed continuously, with an act of displayed image.By repeating the television image that this operation shows an activity continuously is possible.
In the image processing system according to this example structure, same proof is because a plurality of surface conductive electron emission devices that connect up with ladder-shaped in parallel can consistently form, so device property is consistent, and the irregularity in brightness of shown image is less than 5%.
(example 10)
According to this example, a plurality of needle-like copper tips of arrangements of electric connection described in the pie graph 8 laterally are connected to form an association.
Figure 36 is for describing the view of an electrical connections of this example explanation.Numeral 361 is represented a surface conductive electron emission device, and 362 are wiring, and 363 for realizing the contact jaw of electrical connection.As example 8, the latter is made of copper.As knowing, in example 8, laterally be connected to form a blade-like here for the contact jaw of needle-like from Figure 36.As a result, because they are connected by the reguline metal, so the resistance that appears between the electric connection terminal is zero substantially.In addition, the connection resistance between each terminal becomes and can ignore.Cross the variation that means in the electrical reset voltage that might further reduce when charging process is carried out, to impose on each device.With example 8 in employed the same electron source substrate adopt above-mentioned arrangements of electric connection to stand under the situation of electrical reset, the variation that imposes on when electrical reset in the voltage of each device is 0.001V in example 8.Yet in this example, this variation is less than 0.0001V.As a result, confirmed the characteristic as practical devices, the variation in the electronic transmitting efficiency between each device (0.05%) is maintained at less than 5%.In addition, when image processing system with example 9 in identical mode when forming, confirmed that because a plurality of surface conductive electron emission devices can as one man be formed so device property is consistent, and the irregularity in brightness that is shown image is less than 5%.
(example 11)
Example 8 and 10 relates to the electrical reset by the multiple electron source of forming with a surface conductive electron emission device of walking crosswise arrangement.Described such a case in this example, wherein foregoing method B-1 is used in the multiple electron source, in described multiple electron source, with the two-dimentional wiring of the form of a simple matrix 100 * 100 devices is arranged.
To be described a process with reference to figure 37A, 37B, 37C, wherein wires design and the surface conductive electron emission device that constitutes electron source with example 1 in the same way as mentioned form, and carry out electrical reset by Electical connector being connected to an electron source substrate that is arranged with a plurality of surface conductive electron emission devices on it.
Shown in Figure 37 C, arrangements of electric connection 377,378 (the needle-like coupling part that is called probe) is arranged by two row with interlace mode.Probe is connected with device with the ratio of one group of each device, and separately probe be connected to through low-resistance lead 3710,3711 the surface conductive electron emission device two ends near, they are connected in certain delegation so that electromotive force V1, V2 impose on each device with energy.Each probe all is the elasticity pin of being done by tungsten, is applied with for tens whens load gram when it is depressed, and its contact resistance is less than 0.1 Ω.In order further to reduce contact resistance, in this example, the position 373 in the needle point of each elasticity pin and the wiring that is contacted by this probe is covered with one deck low resistive metal, is aluminium in this example.As a result, contact resistance is done less than 0.01 Ω.
These probes are connected with a power supply that produces the electrical reset pulse.This electrical reset pulse has the waveform shown in Fig. 8, and wherein T1 is set at 1 millisecond, and T2 is 10 milliseconds, and crest voltage is 4V.In case the electrical reset of delegation is finished, the row that is connected with probe just is replaced.This process is repeated to carry out electrical reset continuously till all surface conductive electron emission devices are all by electrical reset.
In case utilize electrical reset device of the present invention to apply an electrical reset voltage, can find that then the variation in each contact site voltage of elasticity pin is held less than 0.01V.And the variation between each device in the electronic transmitting efficiency is held less than 5%, as same Devices Characteristics.
In this example, surface conductive electron emission device of one group of probe is connected.Yet, when considering cloth line resistance and device resistance, also can obtain same effect even one group of probe is connected with several devices simultaneously.
In addition, in this example, probe is to contact with the expose portion on wiring surface.Yet, under the situation about not exposing on wiring surface, for example when it is covered by an insulating barrier,, just can obtain same effect by constructing a substrate that has been removed at its insulating barrier of probe contact site and carrying out electrical reset in the identical mode of this example.
(example 12)
Describe an example that utilizes the image processing system of electron source substrate structure referring now to Figure 24, wherein this electron source substrate does not stand electrical reset and handles according to example 11 structures.
At first, carry out the electrical reset that is similar to example 11 and handle in air or nitrogen environment, substrate is fixed on the rear board 241.
Afterwards, by with example 2 in similar arrangements and image processing system of method construct.After these were done in image processing system, the sweep signal and the modulation signal that are provided by the signal generation apparatus (not shown) passed through outside terminal D
X1-D
Xm, D
Y1-D
YnOffer each surface conductive electron emission device, and provide the high voltage of a 5KV with displayed image through high voltage terminal HV.
In image processing system according to this example structure, the same confirmation because a plurality of surface conductive electron emission devices that connect up with the simple matrix shape can as one man form, so device property is consistent, and the irregularity in brightness of shown image is less than 5%.
(example 13)
This example relates to method B-1 wherein equally and is applied to situation in the electron source, and the surface conductive electron emission device is arranged with the form of a simple matrix in this electron source.This is a kind of wherein only for row or only for being listed as the method that is provided with arrangements of electric connection.To describe wherein connect up arrangement and electron source substrate with reference to Figure 38 is pressed and example 1 described identical mode electrical reset, with be connected to the process that electron source substrate is carried out electrical reset by electric current being injected terminal, described electron source substrate was equipped with a plurality of devices before also not standing electrical reset.
In example 8, make the surface conductive electron emission device charged by two groups of arrangements of electric connections at anode and cathode side.Yet, in this example, carry out electrical reset as the choice device that in the example 1, utilizes a horizontal line.More particularly, a selected line (the capable D among Figure 38
XL) common terminal be grounded, be similar on the position that arrangements of electric connection in the example 8 is connected to the wiring that each selected device connects, and this device also is grounded.In addition, each column wire (D among Figure 38
Y1-D
Yn) wiring and remove D
XLThe capable wiring of row is connected on the electrical reset power supply with an electromotive force Vf.Because voltage Vf is applied to the anode-side of each independent device with identical parallel resistance by parallel way, thus the variation in this electrical reset voltage can be eliminated fully, even arrangements of electric connection of the present invention is set at the ground connection side.By constantly changing selected row, all devices can both be by electrical reset.
In case according to the method described above electron source substrate being applied electrical reset handles, m wherein, each is decided to be 1000 n, can confirm that then the variation in the contact site of elasticity pin voltage is held less than 0.01V, and, as the characteristic of practical devices, the variation in the electronic transmitting efficiency between each device (0.05%) is held less than 5%.
In addition, for to use image processing system according to the electron source substrate structure of this example structure with same way as described in the example 12, a plurality of surface conductive electron emission devices that connect up with a simple matrix form can as one man be formed.As a result, confirmed device property be consistent and irregularity in brightness shown image less than 5%.
Though be provided with arrangements of electric connection by 1: 1 ratio for each selected device in this example, even be under the situation of a point at the tie point of arrangements of electric connection, it also is possible that the variation in the applying voltage is improved.For example, be configured that the variation in the electronic transmitting efficiency can remain on less than 10% between the device, even by making row lead D among Figure 38
XLTwo-terminal-grounding and Electical connector is connected under the situation of carrying out electrical reset with the central part of this lead.
(example 14)
This example relates to a kind of arrangement, and wherein the last position as the copper tip of arrangements of electric connection described in the example 8 is equipped with a position with high heat capacity, to comprise a heating/cooling device.
Figure 39 is used to describe this routine view, and Figure 40 is a block diagram describing this device total characteristic.Glass substrate of numeral 391 expressions, 392 expressions constitute the film by the fine particle of the surface conductive electron emission device that is similar to the procedure construction in the example 8.Electrode gap L1 is 20 μ m, is formed with 1000 devices in delegation.Nickel electrode pattern of numeral 393 expressions is used to make electric current common by a plurality of surface conductive electron emission devices, needle-like copper tip of numeral 394 expressions, and it is as the electric contact terminal that applies electrical reset voltage.Here be provided with 332 groups of copper tips for per three devices.
395 expressions are connected to a block conductor of copper tip 394 with electric and hot method.Used the copper bar of cross section here as 5mm * 20mm.396 expressions are as adding a Peltier (Peltier) device that hot/cold is an equipment, and 397 are copper bars, and its cross section is 20mm * 20mm, as the conductor of high heat capacity.Heat radiator of 401 expressions, 402 expression detectors (using a hot coupling here) are used to detect the temperature of block conductor 395, and temperature controller of 403 expressions is used for driving heating/cooling device, and 404 are the power supplys of energizing.
In said apparatus, copper tip 394 Contact welding are received this public wiring 393, and the required voltage of the device of energizing is added to this public wiring 393 becomes electron emission part with formation slit from this power supply 404 of energizing.
At this moment, the resistance of the copper bar 395 between the device becomes less than 1/1000 of the resistance of public wiring 393, and the variation that consequently is added to the voltage of energizing of equipment has disappeared with the same procedure of being narrated in example 8.
And, because the thermal capacity of the public wiring 393 of ratio of heat capacities of copper bar is very manyly big, so that the temperature of the coupling part between public wiring and copper tip remains is constant.The joule's heat energy that device was caused by energizing heats, and is monitored with Peltier device 396 by thermocouple 402 and by temperature controller 403 controls copper bar 395 is cooled off that it is possible therefore keeping a plurality of electron sources under the temperature of substantial constant.In addition, because electrode temperature remains very low and do not change,, and obtain a peak value between device so the temperature profile of atomic film 392 becomes precipitous.Therefore, the zone that thermal breakdown occurs narrows down and this regional relative position between the device becomes constant.Therefore, the variation of the position in slit and shape keeps very little.
Using this routine energized facility voltage of will energizing to be added under the situation of the electron source substrate similar, remain on less than 0.01V in the change in voltage of the contact portion of copper tip 394, and the variations in temperature of each device is also remaining on less than 1 ℃ to example 8.Although interelectrode gap L 1 is broadened to 20 μ m, the variation of the electrode emission effciency between the terminal remains on less than 5% of practical devices characteristic.
And when using the electron source substrate of making according to this example to make image processing system with the same procedure of narration in the example 12, many surface conductive electron emission devices can be formed uniformly.As a result, confirmed that Devices Characteristics is consistent, and the brightness of shown image is irregular less than 5%.
(example 15)
This example relates to and is used for the equipment of implementation method B-1 practically.
An electron source substrate has been equipped electrical connection arrangement, same procedure with example 1 on this electron source substrate forms termination and surface conductive electron emission device, this surface conductive electron emission device is not also applied electrical reset to be handled, wherein provide a plurality of electrical connection arrangements on a line, device is arranged as delegation on this line.Electrical reset is to use this device to carry out.For a horizontal line 300 devices are arranged, electrical reset can be undertaken by the said equipment.But, as in the present example, arrange this devices of 200 row in vertical direction, if when each delegation repeats this operation, the time that this process need is too many.This is inconvenient on producing in batches.Therefore, prepared a plurality of above-mentioned electrical reset mechanisms, these be arrange abreast and drive simultaneously to shorten the processing time.Figure 41 is the perspective view of this equipment of expression, and wherein 411 represent a multiple electron source, and its device is arranged with the form of simple matrix array, 412 is electrical reset mechanisms, wherein three above-mentioned electrical connection arrangements are arranged in parallel, and 413 is temperature controllers, and 414 is the power supplys of energizing.Though the device of Figure 41 has three electrical connection arrangements, quantity can suitably be selected according to the area of substrate and the current capacity of the power supply permission of energizing.The quantity of electrical connection arrangement is many more, and this process required time shortens manyly more.
When carrying out the electrical reset operation that example 12 narrated, the variation of the electronic transmitting efficiency of each surface conductive electron emission device remains on less than 5%, and compares with the situation that each delegation repeats electrical reset, carries out electrical reset in 1/3rd times.
Though Figure 41 has represented to have the arrangement of three electrical connection arrangements, and quantity can suitably be selected according to the current capacity of the area on a plurality of electron sources and the power supply permission of energizing, and the quantity of electrical connection arrangement is many more, and this time that crosses range request shortens many more.
Example 8 to 15 relates to a multiple electron source that is arranged as delegation or a multiple electron source of arranging two-dimensionally with simple matrix form.But the charging method of the present invention of using electrical connection arrangement is for the similarly method use of other common wiring pattern.
(example 16)
Narration is based on the example of method B-2 of the present invention now.
The process of the step (a)-(e) by being similar to the example of narrating above 1 is made a simple wiring matrix pattern.But, as shown in Figure 42, row connecting part gapped 423.
Utilizing the process of high impedance wiring 424 joint gaps 423 will contrast Figure 43 A-43D narrates.
Figure 43 A is the cross sectional view along the line A-A ' of Figure 42.Then, use sputtering method that about 2000 dusts of thickness are arrived in the nichrome vacuum evaporating, pattern forms and is undertaken by imprint lithography, and high impedance part 426 (seeing Figure 43 B) is provided on gap 423.Then, use little configurator to be coated with deposit-silver coating 428 (Figure 43 C) in a side of gap portion 423.Figure 44 represents the circuit diagram of being correlated with in simplified form.For simplicity, this routine electron source comprises 6 * 6 devices.But, comprise 1000 * 1000 devices according to this routine actual electrical component.The capable D of directions X
X1-D
X1000Every line high impedance part (partitioned portion) is provided on 10 equal intervals positions (being per 100 devices).
Then, make electron source substrate by the process that is similar to the step (f)-(h) in the example 1, this electron source substrate does not also carry out electrical reset to be handled.
Then, be positioned at the device of relative high impedance part near power unit one side, promptly device D (1,1)-D (1,6) and D (2,1)-D (2,6) by a device of a device energize.At this moment, alive method as shown in figure 44.The figure shows voltage and be added to D
X1And D
Y1State so that carry out the electrical reset of device D (1,1).Added voltage has the impulse waveform that is similar to the example of narrating previously 8.Therefore, when electrical reset voltage was 5V, as an example, handling in electrical reset was row when energizing, electric current at this moment be circulation current value 1/4th.
Add that from the downside of substrate LASER Light Source improves in the temperature of the nickel-chromium thin film 424 of R (1,1)-R (1,6) and melts coating 428 after this.The coating part (seeing Figure 43 D) of 429 expression fusings., connect by low resistance conductor by repeating identical process for other gap portion at the partitioned portion of R (1,1) on the every row of the directions X-R (1,6) shown in Figure 44.After this, promptly at D (3,1)-D (3,6), the device of D (4,1)-D (4,6) carries out electrical reset with identical method to be handled for next zone.This be repetition make all devices stand electrical reset to handle.Therefore, obtained having the electron source of the surface conductive electron emission device of arranging with the form of that class simple matrix shown in Figure 46 482.
Therefore the electron source that produces has the electron source of its electron emission characteristic of being measured by the said equipment.Variation η=the Ie/If (%) of electronic transmitting efficiency is 0.05%.The variation of this efficient is less than 7% of whole base plate.
In this example, narrated a situation, electrical reset be in the zone of partly dividing by high impedance one by one device ground carry out.But selecting delegation to go forward side by side in this zone, every trade energizes is possible, as in the example 1.In this case, the variation of electronic transmitting efficiency remains on whole substrate less than 5%.
(example 17)
Contrast Figure 24 narrates the example of use according to an image processing system of the electron source substrate formation of example 16 making now, and this electron source substrate is handled through electrical reset.
At first, the electrical reset that is similar to example 16 in air or in nitrogen environment is handled, and this substrate is fixed near plate 241, to make image processing system.
In the image processing system of finishing like this, sweep signal and modulation signal are passed through outside terminal D by the signal generation device (not shown)
X1-D
Xm, D
Y1-D
YnBe added to each surface conductive electron emission device, and add that by HV Terminal Hv the high pressure of 5Kv is so that displayed image.
In the image processing system according to the making of this example, confirm that device property is consistent, and the brightness of the image that shows is irregular less than 3%, because can as one man form with a lot of surface conductive electron emission devices of simple matrix form wiring.
In Xu Shu the example, then substrate is fixed on back plate making image processing system in the above by carrying out the electrical reset processing.But, even as in precedent, using the electron source substrate of not handling, then by outside terminal D through electrical reset
X1-D
Xm, D
Y1-D
YnPresent electric current and carry out electrical reset and use the LASER Light Source heating to make that partly becoming low resistance from high impedance partly constitutes image processing system by this back plate, the variation of this device property remains to less than 5%.
(example 18)
Figure 47 is the plan view according to an electron source of another example of application process B-2.
In this example, as shown in Figure 47, the surface conductive electron emission device is with the wiring one-dimensionally of ladder shape, and the part of this wiring is gapped.Making has the process of the wiring in gap and will narrate according to example 16.
Therefore, electrical reset is handled and the process of the joint gap 491 after realizing the electrical reset processing will contrast Figure 47 and Figure 48,49A, and 49B narrates.
Figure 20 B is a ball bearing made using figure of the complete wiring in expression and gap.For simplicity, the quantity of pixel is 6 * 6 in display panel, and per two devices are separated.But used here electron source comprises 1000 row, and 1000 devices carry out wiring in every row, and this wiring is separated at 10 equal interval locations (per 100 devices).
Figure 49 A represents the cross section in this gap.The probe 512 identical with example 6 connects to survey the tie point among Figure 49 B, and the power supply 513 of energizing is connected and side by side the device in the delegation carried out electrical reset and handle.Alive method is shown in Figure 49.
Each forms voltage is 5V, at this moment the about 3.0A of power supply of each pad (100 device).This be equivalent to wiring be not separated situation electric current 1/10th.
Secondly, as shown in Figure 48 B, gap 491 is that each position uses three gold threads 492 by being welded to connect, and every gold thread diameter is 30 μ m, has therefore made a plurality of electron source substrates.
According to basic conception of the present invention, as mentioned above, the structure of device, material and manufacture method need not restriction.Therefore, the size of division can depend on each device and form the electric current decision.
During with the method actual measurement identical, prove electronic transmitting efficiency η=Ie/If (%) average out to 0.05% at the device property of each pixel with example 16.And its variation remains on less than 6% for whole plate.
In the image processing system that the electrical reset processing method of using this example forms with the method identical with example 9, confirmed that device property is consistent, and the brightness of the image that shows is irregular less than 6%, because many surface conductive electron emission devices with a simple matrix form wiring can be formed uniformly.
(example 19)
Narrate another example now, wherein method B-3 is applied to make the electron source that has with the surface conductive electron emission device of simple matrix form wiring.
Though process is similar to the process of example 1, an electron source substrate is made, and also passes through the form wiring of the surface conductive electron emission device of electrical reset processing with simple matrix on this electron source substrate.In this example, have with a simple matrix arrangement of the device of 100 * 100 array wiring and made.State before electrical reset, the about 1K Ω of the resistance of each device, and also the resistance of the last wiring of each device and following wiring is about 0.01 Ω.Therefore prepared two electron source substrates of such making, and carried out electrical reset by two kinds of diverse ways narrating below.
Electrical reset method 1:
At first, contrast Figure 55 narrates electrical reset method of the present invention.An external scan circuit 632 and a voltage source 633 join, and are used for such method control connection: more than the chat face to face link D of the last wiring 631 that is connected to electron source substrate that the method stated finishes
Oy1-D
OykBecome the power unit 635 (Doyk is a power unit in Figure 55) of conitnuous forms.Be connected to down the link D of wiring
Ox1-D
OxNGround connection.The electric current that flows through current segment can be monitored by current monitoring circuit 634.Its arrangement is such: the impedance that stands the delegation of electrical reset processing can detect.
Electrical reset waveform shown in Figure 54 is coupled with, to carry out electrical reset.T1 here, T2 and N are set at 1 millisecond, 10 milliseconds and 10 respectively.The piece number is 10.When capable to K of m piece carried out electrical reset, the voltage (peak value) that is added to current source part Doyk was:
V0(k，m)＝8.5×〔1+K/10000+0.05m-0.001m×m〕；m＝1～10。
After N that uses Figure 54 forms pulse, by adding that (k, voltage Vi m) measures impedance less than added voltage V0.Carry out impedance measurement and do not influence the device that does not pass through electrical reset.When the impedance of the frequent appearance of measured impedance when judging that at its capable and m piece of the k stand electrical reset has formed, judge that then the device that stands electrical reset also do not finish electrical reset, and produce additional formation pulse (Figure 54 B).
Electrical reset method 2:(example as a comparison)
A circuit is connected to another electron source substrate of preparing with said method by the arrangement that is similar to electrical reset method 1.But in this method, current monitoring circuit is not worked, and the row electrical reset is to use the waveform of energizing of Figure 18 to carry out, and T1 is set at 1 millisecond, and T2 is 10 milliseconds, and adds the voltage with crest voltage 9.3V consistently.
State in (according to the electrical reset method 1 and 2) finished a plurality of surface conductive electron emission device electron sources, as above chatting face to face by terminal D
X1-D
Xm, D
Y1-D
Yn, measure the device property of each surface conductive electron emission device with the method identical with example 16.For electrical reset method 1, electronic transmitting efficiency η=Ie/If (%) is 0.1%.It changes less than 5% for whole plate.On the other hand, for formation method 2, electronic transmitting efficiency η=Ie/If (%) is 0.05%.It changes greater than 10% for whole plate.
Carry out address detected by the measurement of impedance in this example.The method that detects the address according to the Potential distribution of wiring will contrast Figure 51 A and 51B narrates.
Because before electrical reset and the variation of the impedance of each device afterwards, near the current potential of the wiring when electrical reset finishes this device stands big variation (seeing Figure 51 B).Also can change and be about to the variation that probe pins 531 receives wiring and detect this wiring Potential distribution and detect through the address of the device of electrical reset by detecting this.
(example 20)
Contrast Figure 24 narrates the example of use according to the image processing system of the electron source substrate formation of example 5 making now, and this electron source substrate does not carry out electrical reset to be handled.
The electron source substrate 111 that does not carry out above-mentioned electrical reset processing is fixed to back plate 241, and header board 246 is placed on above the electron source substrate through bracing frames 242 after this.The contact coating sintered glass of header board 246, bracing frame 242 and back plate 241 is no less than 15 minutes to seal 400 ℃ of bakings then in atmosphere or in nitrogen environment.Electron source substrate 111 is fixed to back plate 241 and also is to use sintered glass to realize.
Be to use vacuum pump to extract out by the environment in the above-mentioned glass shell of finishing by blast pipe.Obtain vacuum degree greater than 1.333 * 10
-3Behind the handkerchief, pass through outside terminal D according to the scope of example 19
X1-D
Xm, D
Y1-D
YnA voltage is added on the electrode of device, thereby adds that according to two methods identical above-mentioned charging process (electrical reset processing) is to form electron emission part and to make the surface conductive electron emission device with example 19.
Secondly, 1.333 * 10
-4Use gas burner thermal exhaust pipe (not shown) in the vacuum of the handkerchief order of magnitude, thereby seal this glass shell by melting it.
At last, use air-breathing processing so that after sealing, keep vacuum.
In by the above-mentioned image processing system of finishing of the present invention, sweep signal and modulation signal pass through outside terminal D by the signal generation apparatus (not shown)
X1-D
Xm, D
Y1-D
YnBe added to each surface conductive electron emission device, add that by high voltage terminal Hv the high pressure of 6Kv just demonstrates image.
When measuring the brightness of all pixels, obtained the result shown in Figure 50.Particularly, the electrical reset method 1 of the present invention shown in example 19 has found that irregular brightness is very little on whole plate.On the contrary,, found that three edge brightness at screen are high for electrical reset method 2, and very low in the brightness of the middle part of screen.In other words, be added to magnitude of voltage based on the power unit of the address of each device by control, brightness irregular is reduced to less than 5% and can obtain high-quality image forming apparatus.
(example 21)
Secondly, contrast Figure 21 narrates and uses the image processing system of said method B-3 with an electron source formation of ladder shape spread pattern making.The surface conductive electron emission device that does not also stand electrical reset is produced on the substrate 21 of insulation.Manufacturing process is identical with example 8, and the size of surface conductive electron emission device (before the electrical reset) also with example 8 in identical.The device count of delegation is 200, and provides grounded part at the three unities at the two ends of this row.Its equivalent electric circuit is shown in Figure 16 E.
The electron source substrate of making like this uses and carries out electrical reset by the waveform of energizing shown in Figure 52.The peak value of this pulse group generally increases from 8V, reaches maximum 9V, reduces gradually then and gets back to 8V.This process repeats twice.T1 is set at 1 millisecond, and T2 is set at 10 milliseconds, and the whole process of twice repetition is about 5 seconds.Here employed magnitude of voltage is only selection from the condition of all considerations.Therefore, the variation of electronic transmitting efficiency is less than 7%, and obtained the height unanimity of the electron emission characteristic of each device.In this example, carry out good capable electrical reset and needn't detect the address of the device that has been subjected to electrical reset.
In above-mentioned example 1 to 21, above-mentioned several method A-1 has been described, A-2, B-1, B-2 and B-3 can combine.But, be not that said those combination also is possible.
In above-mentioned example, add that on device electrode triangular pulse carries out electrical reset and handles.But the waveform that is added on this device electrode is not limited to triangular wave; Can use the waveform such as the square wave of any hope, and its peak value, pulsewidth and pulse spacing are not limited to above-mentioned value.As long as electron emission part is to carry out electrical reset with suitable method, just can select the value of wishing.
As under the situation of surface conductive electron emission device, in above-mentioned example, obtain similar result at ladder shape surface conductive ballistic device.
In addition, application of the present invention is not limited to the surface conductive electron emission device.The present invention can be used in other device that requires electrical reset, in MIM.
Therefore, according to top the present invention who narrates, provide to have an electron source, an image processing system that is arranged in on-chip a plurality of electron emission devices and make their method.Carry out in the electrical reset process of electrical reset at electron emission part a plurality of electron emission devices, (A) provide a foreign current feeding mechanism with such method: voltage only is added on the set of devices of hope part and is not added to other set of devices, therefore not side by side to carrying out electrical reset at these on-chip all electron emission devices, but continuously device is divided into a plurality of groups, (B) provide a mechanism, so that when wishing that a set of devices is partly carried out electrical reset for one, each device carries out electrical reset at substantially the same voltage or substantially the same power, and electrical reset is carried out in a continuous manner.Therefore obtain following effect:
(1) do not occur during electrical reset owing to breaking that static causes, its result obtains higher output.
(2) transfer on the surface conductive electron emission device not occurring voltage and current during the electrical reset, and since the minimizing that electrical reset voltage that the potential drop in wiring causes or power disperse reduced.Therefore, it is possible making an electron source, and wherein the dispersion of electron emission characteristic has reduced.
(3) owing to the result of above-mentioned (2), it is possible obtaining to have the irregular image processing system of little brightness, therefore makes it can show high-quality image.
(4) alleviated for the device count quantitative limitation on the line that can be connected to wiring, made it can obtain to show the image processing system of high quality image like this in big zone.
(5) needn't use quite expensive material as gold or silver-colored so that reduce connection resistance.Selecting aspect the material the bigger degree of freedom is arranged, and can use more cheap material.
(6) needn't form thick wiring in order to reduce connection resistance.Therefore, manufacture process is that the pattern formation required time of electrical reset and electrode has shortened, and may reduce the cost of the equipment that requires.
Do not breaking away under the spirit and scope of the present invention situation, can make many big significantly different embodiment of the present invention, should understand, except in appending claims, stipulating, the invention is not restricted to its certain embodiments.
Claims (10)
1. method of making electron source, this electron source has a plurality of electron emission devices, and they are arranged on the substrate and by wiring and connect, and it is characterized in that may further comprise the steps:
Power pack to described many wiring provides electrical power, to form the electron emission part of a plurality of electron emission devices; And
Output power or supply power voltage to each power pack of supplying with described many wiring are controlled, so that be conducted to the electrical power of each device of a plurality of electron emission devices or voltage for a plurality of electron emission device substantial constant.
2. according to the method for claim 1, it is characterized in that described many wiring comprise many line direction wiring and column direction wiring, and a plurality of surface conductive electron emission devices are with cells arranged in matrix, so that wiring contacts with column direction with many line direction wiring.
3. according to the method for claim 2, it is characterized in that in described controlled step, before the electron emission part of each in forming described a plurality of electron emission devices confession power or institute's voltage supplied are controlled.
4. according to the method for claim 2, it is characterized in that in described controlled step, with a plurality of electron emission devices that described many wiring are connected in detect a position of a device that has been subjected to electrical reset, and according to the position of being detected, to form other devices the power that supplies or institute's voltage supplied control.
5. according to the method for claim 1, it is characterized in that described electron emission device is the surface conductive electron emission device.
6. according to the method for claim 1, it is characterized in that described output power or described supply power voltage are according to a Position Control of described electron emission device.
7. device of making electron source, this electron source has many wiring and a plurality of electron emission devices that are connected with described many wiring, and this device is characterised in that and comprises:
One is used to change the switch that will be applied to the voltage in many wiring, wherein first current potential that the electron emission device that is connected with some wiring in described many wiring is carried out electrical reset is added in these wiring in described many wiring, and second current potential that the electron emission device that is connected with other wiring in described many wiring is not carried out electrical reset is added in described other wiring in described many wiring.
8. according to the device of claim 7, it is characterized in that also comprising first power supply that described first current potential is provided.
9. according to the device of claim 7 or 8, it is characterized in that also comprising the second source that described second current potential is provided.
10. according to the device of claim 7, it is characterized in that described first current potential is provided by a pulse.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP077900/1993 | 1993-04-05 | ||
| JP100087/1993 | 1993-04-05 | ||
| JP100088/1993 | 1993-04-05 | ||
| JP078164/1993 | 1993-04-05 | ||
| JP7790093 | 1993-04-05 | ||
| JP270343/1993 | 1993-10-28 | ||
| JP055493/1994 | 1994-03-25 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN99102209.2A Division CN1201364C (en) | 1993-04-05 | 1999-02-13 | Electronic source and its producing method and image forming device with the same electronic source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1691247A true CN1691247A (en) | 2005-11-02 |
| CN100550253C CN100550253C (en) | 2009-10-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100978665A Expired - Lifetime CN100550253C (en) | 1993-04-05 | 1994-04-04 | Electron source and manufacture method thereof and the image processing system that uses described electron source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100550253C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198990A (en) * | 2012-01-09 | 2013-07-10 | Fei公司 | Determination of emission parameters from field emission sources |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3888735T2 (en) * | 1987-06-18 | 1994-10-27 | Philips Nv | Display device. |
| US5066883A (en) * | 1987-07-15 | 1991-11-19 | Canon Kabushiki Kaisha | Electron-emitting device with electron-emitting region insulated from electrodes |
| JP2981751B2 (en) * | 1989-03-23 | 1999-11-22 | キヤノン株式会社 | Electron beam generator, image forming apparatus using the same, and method of manufacturing electron beam generator |
-
1994
- 1994-04-04 CN CNB2004100978665A patent/CN100550253C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198990A (en) * | 2012-01-09 | 2013-07-10 | Fei公司 | Determination of emission parameters from field emission sources |
| CN103198990B (en) * | 2012-01-09 | 2017-03-01 | Fei 公司 | Determination from the emission parameter of field emission source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100550253C (en) | 2009-10-14 |
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