CN1689684A - High-concentration particle concentrate, powder, preparing method of high-concentration particle concentrate, and preparing method of powder - Google Patents
High-concentration particle concentrate, powder, preparing method of high-concentration particle concentrate, and preparing method of powder Download PDFInfo
- Publication number
- CN1689684A CN1689684A CN 200510059546 CN200510059546A CN1689684A CN 1689684 A CN1689684 A CN 1689684A CN 200510059546 CN200510059546 CN 200510059546 CN 200510059546 A CN200510059546 A CN 200510059546A CN 1689684 A CN1689684 A CN 1689684A
- Authority
- CN
- China
- Prior art keywords
- powder
- preparation
- obtains
- concentration
- particulate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
A powder preparing device has a filtering device which processes CMP waste water and a vacuum dry-freezing device which dries a slurry which is concentrated to a high concentration by the filtering device. A membrane module in which at least one gel filtering film in which a gel layer is formed on a surface of a filtering membrane having a pore size of 0.25 mum is provided is placed within the filtering device. A pump sucks waste water from within the gel filtering membrane of the membrane module. The high-concentration slurry obtained by the filtering device may be supplied for various uses without further processing, or a powder may be obtained by transporting the high-concentration slurry to the vacuum dry-freezing device using a transporting pump.
Description
The disclosed specification of Japanese patent application No.2004-97061,2004-97064 and 2005-80614, claims, accompanying drawing and summary at this all as the application's reference.
Technical field
The present invention relates to high-concentration particle concentrate, preparation method of high-concentration particle concentrate, powder and preparation method of powder.
Background technology
Thin substrates such as silicon substrate that uses during semiconductor is made and wafer adopt CMP (cmp) system to grind and make planarization.General CMP system, owing in semiconductor device manufacturing process, implement the layer planarization fully of exposure, alleviated the burden of exposure technique, make product percent of pass stable, so, be technology necessary when carrying out interlayer dielectric, bpsg film planarization, the separation of soft blow trench isolations etc.
In semiconductor device manufacturing process, CMP grinding agent when the inorganic insulation retes such as silica insulation film that form as methods such as plasma CVD (Chemical VaporDeposition, chemical vapor deposition method), low pressure-CVD carry out planarization preferably can adopt for example cerium oxide (CeO
2), silicon dioxide granule, aluminium oxide particles, titanium dioxide (TiO
2) particle etc.In addition, above-mentioned grinding agent is dispersed in the water equal solvent usually, further, chemical reaction catalyst such as suitable potassium hydroxide or dispersants such as organic polymer or surfactant is added in this dispersion liquid, forms milled slurry.
Adopt this CMP system, by control, between the grinding head that grinding table that employing is rotated with carrier-pellet or pressure plare or pressing plate are supported, configuration substrate (for example, semiconductor wafer) grinds.Concerning grinding head, though substrate on the grinding head surface when bonding, above-mentioned milled slurry still can be supplied with the middle body that reaches substrate, therefore, its surface forms tiny ditch, during grinding, concerning grinding head, above-mentioned milled slurry available pump etc. are supplied with continuously.
Adopt this CMP system, can eliminate SiO
2Dielectric film surface concavo-convex all forming level and smooth face on the Semiconductor substrate.
Also have, below to the SiO on the Semiconductor substrate
2The CMP of insulating film layer is illustrated, but is not limited thereto, and has the inorganic insulating membrane such as distributing board, glass, silicon nitride of regulation distribution; Optical glass such as optical mask prism lens, ITO inorganic conductive films such as (tin indium oxides); Optics monocrystalline such as the optical integrated circuit optical conversion component light-guide wave path that constitutes with glass and crystalline material, optical fiber end face, scintillator; Semiconductor monocrystals such as Solid State Laser monocrystalline, blue laser LED sapphire substrate, SiC, GaP, GaAs; Glass substrate for disc, magnetic head etc. all can adopt CMP to grind.
The CMP waste water of discharging in the above-mentioned CMP system for example contains cerium oxide particles, silicon dioxide granule, aluminium oxide particles, TiO 2 particles that uses in the grinding agent and the useful fine particle compositions such as fine particle composition that grind.
Therefore, wishing to reclaim these useful fine particle compositions utilizes again.
In recent years, for example adopted filter membrane own through developing the device that fine particle composition contained in the CMP waste water is concentrated.Adopt the device of this past the particulate in the CMP draining can be concentrated into 1000～5000mg/L.
Yet the particulate that reaches this enrichment is difficult to utilize again.
The filter of particularly developing recently " ス ラ リ one Network ロ one ザ " (trade name) (for example, the spy opens the 2003-135914 communique), 0.25 μ m filter membrane surface forms the gel filtration film in the aperture, again in the filter membrane with the form of pump suction waste water, only produce slight air bubble for the film surface washing.Adopt this filter, for example particulate can be concentrated into 10,000～300,000 mg/L, thickening efficiency significantly improves.
Wish to improve the added value of this highly enriched particulate slurry.
Summary of the invention
The objective of the invention is to seek to make the particulate added value that reclaims in the waste water to increase, further improve the cycle that recycles.
The present invention has following feature.
(1) a kind of high-concentration particle concentrate, it is to obtain by pH being transferred to 3～8 the solution concentration that contains the low concentration particulate to the slurry of the high-concentration particle that contains 1 weight %～50 weight %.
Above-mentioned high-concentration particle concentrate can directly use in each field, in addition, since highly enriched, also can obtain desirable powder even carry out drying (moisture adjusting) with the short time.
(2) a kind of preparation method of high-concentration particle concentrate transfers to pH 3～8 the solution concentration that contains the low concentration particulate to the high-concentration particle slurry that contains 1 weight %～50 weight %.
With above-mentioned same high-concentration particle concentrate, can directly in each field, use, in addition, since highly enriched, also can obtain desirable powder even carry out drying (moisture adjusting) with the short time.
(3) a kind of method that makes powder, wherein, the high-concentration particle concentrate described in above-mentioned (1), the slurry that promptly contains above-mentioned high-concentration particle, according to resulting powder diameter after the drying, regulate the slurry concentration that contains particulate when disperseing again again, carry out drying (moisture adjusting) then.
The slurry that contains high-concentration particle, again according to resulting powder diameter after the drying, regulate the slurry concentration that contains particulate when disperseing again, carry out drying (moisture adjusting) then, can obtain desirable association state, i.e. the powder of required particle diameter.
(4) a kind of method that makes powder wherein, the slurry that contains high-concentration particle described in above-mentioned (2), again according to resulting powder diameter after the drying, is regulated the slurry concentration that contains particulate when disperseing, carry out drying then again.
With the above-mentioned same slurry that contains high-concentration particle, again according to resulting powder diameter after the drying, regulate the slurry concentration of particulate when disperseing again, carry out drying (moisture adjusting) then, can obtain desirable association state, i.e. the powder of desired particle diameter.
(5) a kind of preparation method of powder transfers to pH the slurry of the particulate of 3～8 the concentration that contains 20 weight %～50 weight %, carries out vacuum freeze drying, generates powder.
Owing to adopt the slurry of high concentration powder, carry out vacuum freeze drying, so can significantly shorten the time of powder for drying, simultaneously, adopt slurry can obtain the powder of high added value.
(6) a kind of high-concentration particle concentrate, the average grain diameter of this particulate described in wherein above-mentioned (1) is 50nm～500nm.
(7) a kind of manufacture method of high-concentration particle concentrate, the average grain diameter of this particulate described in wherein above-mentioned (2) is 50nm～500nm.
(8) a kind of preparation method of powder, wherein, the average grain diameter of any one described this particulate is 50nm～500nm in above-mentioned (3), (4), (5).
(9) in the high-concentration particle concentrate described in above-mentioned (1), the solution that contains above-mentioned low concentration particulate is CMP waste water.
(10) in the preparation method of high-concentration particle concentrate described in above-mentioned (2), the solution that contains above-mentioned low concentration particulate is CMP waste water.
(11) in the high-concentration particle concentrate described in above-mentioned (1) or (6), this particulate contains SiO at least
2
(12) in the preparation method of high-concentration particle concentrate described in above-mentioned (2) or (7), this particulate contains SiO at least
2
(13) in above-mentioned (3), (4), (5) any one described preparation method of powder, this particulate contains SiO at least
2
Because above-mentioned SiO
2Be the material that in extensive fields, uses as reagent, pretend to powder and obtain to increase added value.
(14) in the high-concentration particle concentrate described in above-mentioned (1), the solution that contains above-mentioned low concentration particulate is mixed acid CMP waste water and alkaline CMP waste water, transfers to pH3～8.
(15) in the preparation method of high-concentration particle concentrate described in above-mentioned (2), the solution that contains above-mentioned low concentration particulate is that acid CMP waste water and alkaline CMP waste water are mixed, and pH is transferred to 3～8.
(16) in the high-concentration particle concentrate described in above-mentioned (1) or (6), described particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
(17) in the preparation method of high-concentration particle concentrate described in above-mentioned (2) or (7), above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
(18) in above-mentioned (3), (4), (5) any one described preparation method of powder, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
Above-mentioned particulate is useful metallic compound, wishes recycling.
(19) in above-mentioned (5) described preparation method of powder, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide.
For example, contained above-mentioned SiO at least in the following CMP waste water
2, cerium oxide, aluminium oxide, titanium dioxide, can be used as powder of many uses, that added value is high and obtain.
(20) in above-mentioned (3), (4), (5), (8), (13), (18), (19) any one described preparation method of powder, resulting specific surface area is long-pending to be 10m
2/ g～400m
2/ g.
By drying, can make the long-pending increase of gained specific surface area.And then, by the change drying condition, can amass the suitable degree that is controlled to the gained specific surface area.
(21) a kind of powder is characterized in that, in above-mentioned (5), (8), (13), (19), (20) any one described preparation method of powder, the average grain diameter of resulting powder is 5 μ m～100 μ m.
(22) a kind of powder, it can adopt above-mentioned (3), (4), (8), (13), (18), (19), (20) any one described preparation method of powder to obtain.
According to the present invention, can obtain the high concentration slurry of energy cycling and reutilization and the powder higher than this slurry added value.
Description of drawings
Fig. 1 is the powder manufacturing installation structural map of explanation embodiment of the present invention.
Fig. 2 contains low concentration SiO
2The pH value of solution of particulate and resulting SiO
2Specific surface area amasss graph of a relation.
Fig. 3 contains acid low concentration SiO
2SiO in the solution of particulate
2The surface state ideograph of particle.
Fig. 4 contains alkaline low concentration SiO
2SiO in the solution of particulate
2The surface state ideograph of particle.
Fig. 5 is SiO
2Contain low concentration SiO near the isoelectric point
2SiO in the solution of particle
2The surface state ideograph of particulate.
Specific embodiments
The following describes the preferred embodiments of the invention.
Fig. 1 represents the powder manufacturing installation structure used in the preparation method of powder of the present invention.As shown in Figure 1, the powder manufacturing installation of the present embodiment roughly constitutes: the filter 10 that above-mentioned CMP (cmp) waste water is handled; With, being concentrated into high concentration by this filter 10,1 weight %～50 weight % for example, the slurry of preferred 20 weight %～50 weight % carries out the vacuum freeze dryer 20 of vacuum freeze drying.And in filter 10, as mentioned above, the filter membrane surface of 0.25 μ m is provided with membrane module 12 in the aperture, and the gel filtration film of the formation gel layer more than at least 1 or 1 has been installed in this assembly.In addition, pump 14 aspirates waste water in the gel filtration film of membrane module 12.Also have, as above-mentioned filter 10, for example further preferably can be in " ス ラ リ one Network ロ one ザ " (trade name) (ア of Sanyo Network ア テ Network ノ Co., Ltd. system) of the slight gassing in film surface.
As the particulate in the above-mentioned CMP waste water, for example, can enumerate the grinding agent that uses in the CMP system, for example cerium oxide (CeO
2), silicon dioxide granule, aluminium oxide particles, titanium dioxide (TiO
2) particle etc., these abrasive particles are the main components in the CMP waste water, in addition, also contain the SiO as Semiconductor substrate
2The SiO of insulating film layer lapping rejects
2Particle or metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride etc.
Particularly, the SiO of Semiconductor substrate
2Insulating film layer, the CMP waste water that produces when adopting the grinding agent that constitutes by silicon dioxide granule to grind, because its pH is near 10, so be known as alkaline CMP waste water, this alkalescence CMP waste water, the inorganic particles in its CMP waste water 100% are SiO almost
2And as CMP waste water, the shared ratio of above-mentioned alkaline CMP waste water is big.On the other hand, produce when in semiconductor applications or other field, grinding, and contain a lot of SiO of removing
2The CMP waste water of metal in addition is because its pH is near 2, so be known as acid CMP waste water.
The average grain diameter of particulate is 50nm～500nm in this CMP waste water, is in the particle size range that is called colloid, and preferred 50nm～200nm is most usually near 100nm.For example, when particulate be SiO
2The time, be the cataloid state.
Supply with the solution that contains the low concentration particulate of above-mentioned filter 10, particularly the pH of CMP waste water is adjusted to 3～8th, and is preferred.As shown in Figure 2, be 100%SiO containing inorganic particles
2Low concentration solution in, near the specific area pH4 is the highest, this pH is an isoelectric point.In addition, adopt SiO after above-mentioned powder manufacturing installation concentrates vacuum freeze drying
2Specific surface area long-pending, for being 130m as the spendable specific area of high-effect particle
2/ g or 130m
2More than/the g, wish that pH is below 8 or 8.On the other hand, when the pH value of solution that contains the low concentration particulate less than 3 the time, specific area not only reduces, and, corrode sometimes when in filter 10, carrying out concentration, be unfavorable.
In addition, for the long-pending relation of the specific surface area after pH value of solution that contains the low concentration particulate and the concentrated vacuum freeze drying, only to contain SiO
2The low concentration solution of particulate is an example, is described in detail with Fig. 3～Fig. 5.
As shown in Figure 3, contain SiO
2The pH value of solution of particulate is lower than isoelectric pH 4, promptly is lower than at 4 o'clock (being called " acid solution " here), and by the effect of repulsive force between the charged particle of microparticle surfaces, interparticle distance is from drawing back, and the result is difficult to cohesion, and specific area has the tendency that diminishes.In addition, as shown in Figure 4, when containing SiO
2The pH value of solution of particulate is bigger than isoelectric pH 4, and promptly greater than 4 o'clock (being called " alkaline solution " here), by the effect of repulsive force between the charged particle of microparticle surfaces, interparticle distance is from drawing back, and the result is difficult to cohesion, and specific area has the tendency that diminishes.In addition, as shown in Figure 5, when containing SiO
2(be called " neutral solution " here) when the pH value of solution of particulate is isoelectric pH 4, because microparticle surfaces is not charged, repulsive interaction do not take place between particle, interparticle distance is from approaching, and particle is easy to cohesion, and the result is that specific area strengthens.
As the above-mentioned pH value of solution method of adjustment that contains the low concentration particulate, can enumerate: (a) above-mentioned acid CMP waste water and alkaline CMP waste water are suitably mixed, can be adjusted to pH3～8.(b) add the pH conditioning agent in oxytropism and/or the alkaline CMP waste water, can prepare through the solution that contains the low concentration particulate after the pH adjusting.As the pH conditioning agent, for example can adopt potassium hydroxide, ammonium hydroxide etc. here.As other schemes, (c) in above-mentioned filter 10, supply with do not regulate the solution that contains the low concentration particulate of pH after, can be with the suitable pH in the above-mentioned filter 10 of adjusting of above-mentioned pH conditioning agent.In addition, as another embodiment, (d) supply with above-mentioned filter 10 containing the low concentration particulate solution of not adjusting pH, this concentration is stopped, can be used as the slurry that contains high-concentration particle on this filter 10 inner edges monitoring pH limit.
In the present embodiment, as CMP waste water, especially preferably with SiO
2Particulate is adjusted as the pH of the alkaline CMP waste water of main body, concentrates vacuum freeze drying.In this case, owing to can obtain the high pure SiO of purity
2Powder is so can be used as the high added value powder again.
In addition, the above-mentioned solution that contains the low concentration particulate is concentrated into high concentration by above-mentioned filter 10, preferred 1 weight %～50 weight % more preferably is concentrated into the slurry of 20 weight %～50 weight %.Particularly the slurry of the high concentration that is concentrated into 20 weight %～50 weight % is carried out vacuum freeze drying, can significantly shorten drying time, in addition, can evenly keep the particle diameter of gained powder.
In the present embodiment,, preferably adopt vacuum freeze dryer 20 as being used for the drier that drying contains the slurry of high-concentration particle.As the condition of vacuum freeze drying, can suitably select according to the slurry concentration that contains high-concentration particle, for example-70 ℃～0 ℃, preferred-60 ℃～-5 ℃, more preferably-10 ℃～-5 ℃ (ice temperature), preferred vacuum is 2～5mmHg (2.7～6.7hPa (N/m
2)).As vacuum freeze dryer, for example, can adopt " TFD-550-8SP " (Takara KK (JP) Katsushika, Tokyoto, Japan makes made).
Here, according to the inventor's experiment, when adopting above-mentioned filter 10 to be concentrated into particulate average grain diameter in the slurry of 30 weight % to be 18.5 μ m, when carrying out freeze drying, do not pulverize, the average grain diameter of its powder is 59.0 μ m.On the other hand, when this slurry is carried out heat drying, because particulate becomes sintered body so pulverize with mortar.The powder average grain diameter of this pulverizing is 120.8 μ m.Therefore, when wanting to obtain the little powder of particle diameter, preferably implement freeze drying.
The high concentration slurry of the high-concentration particle concentrate that obtains by above-mentioned filter 10 both can directly use, also can be as enamel, cosmetic, the grinding agent of pottery.In addition, also can in the concentrate of above-mentioned high-concentration particle, add other suitable additives according to purposes.
Adopting above-mentioned powder manufacturing installation, is 5 μ m～100 μ m by carrying out the powder average grain diameter that vacuum freeze drying obtains under these conditions, for example, and when powder is SiO
2The time, the powder that can obtain the about 30 μ m of average grain diameter is a pyrolysis silica.
In addition, contain the high-concentration particle slurry to what obtain, again according to resulting powder diameter, adjust when disperseing again that to carry out drying after the particulate slurry concentration be preferred after the drying according to above-mentioned filter 10.
In above-mentioned drying process, for example in the vacuum freeze-drying preface,, can control the particle diameter of dried powder by suitable adjustment vacuum state and baking temperature.Therefore, according to resulting powder purposes, the powder of desired particle diameter is made with extra care.
The specific surface area that obtains in above-mentioned drying is long-pending to be 10m
2/ g～400m
2/ g.
By carrying out above-mentioned drying, can make the long-pending increasing of resulting specific surface area.Further, by changing drying condition, can amass the suitable degree that is controlled to resulting specific surface area.
The powder that adopts above-mentioned powder manufacturing installation and preparation method of powder to obtain, for example, can be at porous material, cosmetic, adsorbent, pottery, filtration adjuvant, hydrophilic finishing agent, analytical instrument with filler fillers such as (for example) gas chromatographies, printing with the additive of toner etc.
The high concentration slurry can suitably be selected its purposes according to powder contained in this slurry, for example, can be used as enamel, cosmetic, the grinding agent of ware.
Carry out any one field that powder that drying obtains can utilize again at CMP waste water, for example porous material, cosmetic, adsorbent, pottery, filtration adjuvant, hydrophilic finishing agent, analytical instrument all are suitable for the additive of toner etc. with filler fillers such as (for example) gas chromatographies, printing.
Claims (57)
1. what high-concentration particle concentrate, its pH were adjusted to solution concentration to the 1 weight % that contains the low concentration particulate～50 weight % of 3～8 contains the high-concentration particle slurry.
2. the manufacture method of a high-concentration particle concentrate, what its pH was adjusted to solution concentration to the 1 weight % that contains the low concentration particulate～50 weight % of 3～8 contains the high-concentration particle slurry.
3. preparation method of powder, the high-concentration particle concentrate described in its claim 1, the promptly above-mentioned slurry that contains high-concentration particle further according to gained powder diameter after the drying, is adjusted the slurry concentration that contains particulate when disperseing once more, carry out drying then.
4. preparation method of powder, the slurry that contains high-concentration particle described in its claim 2 further according to gained powder diameter after the drying, is adjusted the slurry concentration that contains particulate when disperseing once more, carry out drying then.
5. preparation method of powder, its pH are adjusted to 3～8 the slurry that contains 20 weight %～50 weight % particle concentrations and carry out vacuum freeze drying, make powder.
6. high-concentration particle concentrate, wherein, the average grain diameter of the above-mentioned particulate described in the claim 1 is 50nm～500nm.
7. the manufacture method of a high-concentration particle concentrate, wherein, the average grain diameter of the above-mentioned particulate described in the claim 2 is 50nm～500nm.
8. manufacturing method of power, wherein, the average grain diameter of the above-mentioned particulate described in the claim 3 is 50nm～500nm.
9. manufacturing method of power, wherein, the average grain diameter of the above-mentioned particulate described in the claim 4 is 50nm～500nm.
10. manufacturing method of power, wherein, the average grain diameter of the above-mentioned particulate described in the claim 5 is 50nm～500nm.
11. the high-concentration particle concentrate described in claim 1, wherein, the above-mentioned solution that contains the low concentration particulate is CMP waste water.
12. the preparation method of high-concentration particle concentrate described in claim 2, wherein, the above-mentioned solution that contains the low concentration particulate is CMP waste water.
13. the high-concentration particle concentrate described in claim 1, wherein, above-mentioned particulate contains SiO at least
2
14. the preparation method of high-concentration particle concentrate described in claim 2, wherein, above-mentioned particulate contains SiO at least
2
15. the preparation method of powder described in claim 3, wherein, above-mentioned particulate contains SiO at least
2
16. the preparation method of powder described in claim 4, wherein, above-mentioned particulate contains SiO at least
2
17. the preparation method of powder described in claim 5, wherein, above-mentioned particulate contains SiO at least
2
18. the high-concentration particle concentrate described in claim 1, wherein, the above-mentioned solution that contains the low concentration particulate makes pH be adjusted into 3～8 by acid CMP waste water and alkaline CMP waste water are mixed.
19. the preparation method of high-concentration particle concentrate described in claim 2, wherein, the above-mentioned solution that contains the low concentration particulate makes pH be adjusted into 3～8 by acid CMP waste water and alkaline CMP waste water are mixed.
20. the high-concentration particle concentrate described in claim 1, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
21. the preparation method of high-concentration particle concentrate described in claim 2, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
22. the preparation method of powder described in claim 3, wherein, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
23. the preparation method of powder described in claim 4, wherein, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide, metal hydroxides, oxide, pottery, indium, iron hydroxide, calcirm-fluoride.
24. the preparation method of powder described in claim 5, wherein, above-mentioned particulate contains SiO at least
2, cerium oxide, aluminium oxide, titanium dioxide.
25. the preparation method of powder described in claim 3, wherein, resulting specific surface area is long-pending to be 10m
2/ g～400m
2/ g.
26. the preparation method of powder described in claim 4, wherein, resulting specific surface area is long-pending to be 10m
2/ g～400m
2/ g.
27. the preparation method of powder described in claim 5, wherein, resulting specific surface area is long-pending to be 10m
2/ g～400m
2/ g.
28. a powder is characterized in that, in the preparation method of powder described in the claim 5, resulting powder average grain diameter is 5 μ m～100 μ m.
29. an enamel wherein contains the high-concentration particle concentrate described in the claim 1.
30. a grinding agent wherein contains the high-concentration particle concentrate described in the claim 1.
31. a cosmetic wherein contains the high-concentration particle concentrate described in the claim 1.
32. a powder, it obtains in the described preparation method of powder of claim 3.
33. a powder, it obtains in the described preparation method of powder of claim 4.
34. a porous material comprises the powder that obtains in the described preparation method of powder of claim 5.
35. a cosmetic wherein contains the powder that obtains in the described preparation method of powder of claim 5.
36. an adsorbent wherein contains the powder that obtains in the described preparation method of powder of claim 5.
37. a pottery wherein contains the powder that obtains in the described preparation method of powder of claim 5.
38. a filtration adjuvant wherein contains the powder that obtains in the described preparation method of powder of claim 5.
39. a hydrophilic finishing agent wherein contains the powder that obtains in the described preparation method of powder of claim 5.
40. an analytical instrument filler wherein contains the powder that obtains in the described preparation method of powder of claim 5.
41. an additive that prints with toner wherein contains the powder that obtains in the described preparation method of powder of claim 5.
42. a porous material comprises the powder that obtains in the described preparation method of powder of claim 3.
43. a cosmetic wherein contains the powder that obtains in the described preparation method of powder of claim 3.
44. an adsorbent wherein contains the powder that obtains in the described preparation method of powder of claim 3.
45. a pottery wherein contains the powder that obtains in the described preparation method of powder of claim 3.
46. a filtration adjuvant wherein contains the powder that obtains in the described preparation method of powder of claim 3.
47. a hydrophilic finishing agent wherein contains the powder that obtains in the described preparation method of powder of claim 3.
48. an analytical instrument filler wherein contains the powder that obtains in the described preparation method of powder of claim 3.
49. an additive that prints with toner wherein contains the powder that obtains in the described preparation method of powder of claim 3.
50. a porous material comprises the powder that obtains in the described preparation method of powder of claim 4.
51. a cosmetic wherein contains the powder that obtains in the described preparation method of powder of claim 4.
52. an adsorbent wherein contains the powder that obtains in the described preparation method of powder of claim 4.
53. a pottery wherein contains the powder that obtains in the described preparation method of powder of claim 4.
54. a filtration adjuvant wherein contains the powder that obtains in the described preparation method of powder of claim 4.
55. a hydrophilic finishing agent wherein contains the powder that obtains in the described preparation method of powder of claim 4.
56. an analytical instrument filler wherein contains the powder that obtains in the described preparation method of powder of claim 4.
57. an additive that prints with toner wherein contains the powder that obtains in the described preparation method of powder of claim 4.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP097064/04 | 2004-03-29 | ||
| JP2004097061 | 2004-03-29 | ||
| JP097061/04 | 2004-03-29 | ||
| JP80614/05 | 2005-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1689684A true CN1689684A (en) | 2005-11-02 |
Family
ID=35345627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510059546 Pending CN1689684A (en) | 2004-03-29 | 2005-03-29 | High-concentration particle concentrate, powder, preparing method of high-concentration particle concentrate, and preparing method of powder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1689684A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108358607A (en) * | 2017-01-26 | 2018-08-03 | 润泰精密材料股份有限公司 | Method for preparing porous material |
-
2005
- 2005-03-29 CN CN 200510059546 patent/CN1689684A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108358607A (en) * | 2017-01-26 | 2018-08-03 | 润泰精密材料股份有限公司 | Method for preparing porous material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1245471C (en) | Cerium oxide abrasive and method of polishing substrates | |
| CN1128195C (en) | Abrasive, method of polishing wafer, and method of producing semiconductor device | |
| CN1240797C (en) | Polishing agent and method for producing planar layers | |
| CN1667026A (en) | Polishing slurry, method of producing same, and method of polishing substrate | |
| US7252782B2 (en) | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method | |
| CN1248967C (en) | Cerium oxide sol and abrasive | |
| CN1550537A (en) | Abrasive slurry having high dispersion stability and manufacturing method for a substrate | |
| US20080176982A1 (en) | Polishing slurry for chemical mechanical polishing and method for polishing substrate | |
| CN101039876A (en) | Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same | |
| CN1745460A (en) | CMP polishing compound and polishing method | |
| CN1572424A (en) | Chemical mechanical polishing method for sti | |
| CN1161998A (en) | Polishing agent | |
| CN1475540A (en) | Chemical/mechanical polishing paste and chemical mechanical polishing method using said paste | |
| EP1756244A4 (en) | Cerium oxide abrasive and slurry containing the same | |
| EP1412443A1 (en) | Cerium oxide slurry and method of manufacturing a substrate | |
| JP2005236275A (en) | Water disperse form for chemical mechanical polishing and chemical mechanical polishing method | |
| JP4972829B2 (en) | CMP polishing agent and substrate polishing method | |
| US20050215412A1 (en) | High-concentration particle concentrate, powder, preparing method of high-concentration particle concentrate, and preparing method of powder | |
| CN1944496A (en) | Polishing slurry, method of producing same, and method of polishing substrate | |
| CN1818002A (en) | Abrasive particles, polishing slurry, and producing method thereof | |
| CN1153823C (en) | Composite for mechanochemical polishing polymer insulating material layer with low dielectric constant | |
| CN1689684A (en) | High-concentration particle concentrate, powder, preparing method of high-concentration particle concentrate, and preparing method of powder | |
| JP5375025B2 (en) | Polishing liquid | |
| CN1791705A (en) | Silicon epitaxial wafer, and silicon epitaxial wafer producing method | |
| KR101874996B1 (en) | A chemical-mechanical polishing slurry with excellent polishing efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20051102 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |