CN1671618A - Method for producing highly pure anhydrous solutions containing hydrogen fluoride - Google Patents
Method for producing highly pure anhydrous solutions containing hydrogen fluoride Download PDFInfo
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- CN1671618A CN1671618A CNA038184532A CN03818453A CN1671618A CN 1671618 A CN1671618 A CN 1671618A CN A038184532 A CNA038184532 A CN A038184532A CN 03818453 A CN03818453 A CN 03818453A CN 1671618 A CN1671618 A CN 1671618A
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- hydrogen fluoride
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B9/00—General methods of preparing halides
- C01B9/08—Fluorides
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Abstract
Methods for producing highly pure solutions containing hydrogen fluoride, one or more salts thereof or a mixture of two or more thereof, by adding hydrogen fluoride to at least one anhydrous solvent, wherein the hydrogen fluoride is added to the anhydrous solvent or solvents in the form of a gas or as a liquified gas or as a mixture of gas and liquefied gas.
Description
Background of invention
The present invention relates to prepare the method for the high purity solutions of fluorinated hydrogen (HF), its salt or its mixture, wherein hydrogen fluoride joins in the anhydrous solvent with gas and/or liquefied gas form.
Electronic industry and semi-conductor industry especially need the high purity process solutions.The solution that comprises fluorinated hydrogen and salt thereof or its mixture in these solution, this solution can contain or not contain other components.
The ammonium fluoride solution that meets the highest purity requirement adopts usually as United States Patent (USP) 5,320, and the method described in 709 prepares the Neutral ammonium fluoride dissolution of crystals in corresponding solvent.Usually a shortcoming of this method be metals content impurity in the ppm scope, therefore described solution is not suitable for the field that metal content is had strict purity requirement.But the required Neutral ammonium fluoride crystal of high purity solutions that additional purification is used to prepare utmost point low-metal content is difficult.
During being to produce, another shortcoming of this method reappears the very difficulty of hydrofluoric concentration of dissociating in every batch of ammonium fluoride solution.But for some industrial use, the constant free hydrogen fluoride content is vital.
Still need to obtain to have the free relative constant hydrofluoride of hydrogen fluoride concentration solution in the solution of highly purified hydrogen fluoride and salt thereof and the every batch of product.
Summary of the invention
The present invention has satisfied the demand.The invention provides the method for the solution of the hydrogen fluoride of the purity level that a kind of preparation do not reach so far and salt thereof.
Therefore, one aspect of the present invention provides a kind of preparation to comprise hydrogen fluoride or its one or more salt (independent hydrogen fluoride or its salt, the method of high purity solutions or the mixture of hydrogen fluoride and salt thereof), in described method hydrogen fluoride is fed at least a anhydrous solvent, wherein said hydrogen fluoride joins in one or more anhydrous solvents with the form of gas and/or liquefied gas.
Anyly can dissolve hydrofluoric anhydrous solvent and can be used as anhydrous solvent.Common described solvent is a polar anhydrous.Therefore, the present invention includes above-mentioned method, wherein at least a anhydrous solvent is a polar solvent.
The inventive method also comprises the embodiment for preparing high purity solutions, wherein except hydrogen fluoride and one or more anhydrous solvents, has also used at least a other components.
Therefore, the invention still further relates to above-mentioned method, wherein except in one or more anhydrous solvents, adding hydrogen fluoride, also add two or more mixture of at least a other gases, at least a other liquid, at least a other solids or its.
Aspect the embodiment of the inventive method preferred, except hydrogen fluoride, also used ammonia as component, prepared ammonium fluoride solution thus.
Therefore, the invention still further relates to a kind of aforesaid method that high purity is fluoridized ammonium solution for preparing, wherein said ammonia is as other components.Though can use liquid ammonia in principle, preferred gas ammonia.
Another of the embodiment of the inventive method preferred aspect, described other components are the another kind of gas that is used as reactant gases in etching.Example comprises hydrogenchloride and hydrogen bromide.
Therefore, the invention still further relates to a kind of aforesaid method, wherein gas chlorination hydrogen or gas hydrogen bromide or its mixture are as other components.In the methods of the invention, the stoichiometric ratio of hydrogen fluoride and hydrogenchloride and/or hydrogen bromide preferably is less than or equal to 1, is more preferably less than 1.
The present invention also comprises the high purity solutions according to the hydrogen fluoride of method for preparing or its one or more salt (as Neutral ammonium fluoride, independent hydrogen fluoride or its salt, or the mixture of hydrogen fluoride and salt thereof), optional other components that comprises of described solution.
Adopt conventional basically method that hydrogen fluoride is joined in one or more anhydrous solvents with anhydrous gas and/or liquefied gas form.In a preferred embodiment, described one or more anhydrous solvents are placed proper container.Described container material can be basically be fit to contact with hydrogen fluoride and material free from foreign meter is made by any, obtains highly purified solution with assurance.Preferably the container inner wall that contacts with high purity solutions is by metal-free polymkeric substance manufacturing, and described polymkeric substance is HDPE, PFA, polypropylene, PVDF and perfluorination ethylene-propylene copolymer (FEP) for example.(as specific density is 0.940-0.970g/cm to unsettled high density polyethylene(HDPE)
3, 0.942-0.961g/cm especially
3High density polyethylene(HDPE)) polymkeric substance for being fit to.This quasi-polyethylene comprises that trade mark is the polyethylene of Lupolen , as Lupolen 6021D, Lupolen 5021D, Lupolen 4261AQ149 and Lupolen 4261AQ135.The container that is used for the inventive method can be made up of one or more layers, and wherein the one or more skins that do not contact with solution can be basically by any material preparation.
The pipeline that the hydrogen fluoride of gas and/or liquefied gas form is delivered to the container that one or more anhydrous solvents are housed also can be composed of any suitable material basically.The preferred in the methods of the invention hose nipple of making by high purity PFA that uses.
According to the inventive method, before being joined one or more anhydrous solvents, gaseous hydrogen fluoride it should be liquefied, and described liquefaction process can adopt the method for any routine to carry out basically.
According to the inventive method, if hydrogen fluoride is joined in the anhydrous solution with gas form and liquefied gas form, can at first add gaseous hydrogen fluoride, add liquefaction hydrogen fluoride then.Also can at first add liquefaction hydrogen fluoride, add gaseous hydrogen fluoride then.Also can add gaseous hydrogen fluoride and liquefaction hydrogen fluoride simultaneously, wherein before adding, described gaseous hydrogen fluoride and liquefaction hydrogen fluoride can be mixed.
According to the inventive method, can before joining in one or more anhydrous solvents with gas and/or liquefied gas form hydrogen fluoride, make it reach predetermined temperature.Also can before adding hydrogen fluoride, make one or more anhydrous solvents reach predetermined temperature.Also hydrogen fluoride can joined in the process of one or more anhydrous solvents, make solution reach predetermined temperature and/or remain under the predetermined temperature.Adopt conventional basically method to carry out temperature regulation.
Join in the process of one or more anhydrous solvents at hydrogen fluoride, can be by the conventional basically described solution of technology homogenizing.In a preferred embodiment of the invention, behind the adding hydrogen fluoride, adopt one or more pump pressure pipelines with solution circulated.
In a preferred embodiment of the inventive method, described anhydrous solvent is selected from polyvalent alcohol, carboxylic acid, carboxylic acid derivative, sulfur-containing organic compound, aliphatic series or aromatics nitrogenous compound and two or more mixtures thereof.
In the above-mentioned solvent, examples of polyhydric alcohols comprises ethylene glycol, propylene glycol, polymethylene glycol, polyoxyethylene glycol and glycerol.Especially preferably more low viscous polyvalent alcohol.In addition, also preferred polyalkylene glycol, particularly molecular-weight average are 250-6,000 polyoxyethylene glycol, more preferably molecular-weight average be 250-less than 5,000,250-1 particularly, 000 polyoxyethylene glycol.
Described carboxylic acid is included in and is liquid under the envrionment conditions, and has lipid acid, alicyclic acid and the aromatic acid of one or more acid groups, for example formic acid, acetate and propionic acid.The acid derivative of carboxylic acid (as ester or acid amides) also is the solvent that is fit to.Also can use the acrylic acid derivative or the carboxylic acid derivative of carboxylic acid.Also can have hydroxyl and halogenic substituent.Aminocarboxylic acid also can be used as solvent.
Anhydrous sulfur-containing organic compound, for example sulfuric ester, sulphonate, sulfoxide, sulfone or sulfite all are suitable solvents, comprise dimethyl sulfoxide (DMSO), dimethyl sulfite, sulfurous acid diethyl ester, sulfurous acid glycol ester, dimethyl sulfone, ethyl sulfone, dipropyl sulfone, dibutyl sulfone, tetramethylene sulfone, methyl sulfolane, diethyl sulfoxide, dipropyl sulfoxide, dibutyl sulfoxide, ring fourth sulfoxide, ethyl methane sulfonate, 1,4-butyleneglycol two methanesulfonates, ethyl sulfate, propyl sulfate, dibutyl sulfate, sulfuric acid dihexyl, sulfuric acid dioctyl ester etc.
In addition, ethylene carbonate, Texacar PC, methylcarbonate, diethyl carbonate, dipropyl carbonate, carbonic acid diisopropyl ester, dibutyl carbonate also are suitable as the anhydrous solvent of the inventive method.
The aliphatic cpd of the hydrofluoric replacement of solubilized also can be used as solvent.Wherein the substituting group that can mention has halogen.
Another kind of useable solvents is aliphatic amide and aromatic amine, and described amine can be substituted, for example amino alcohol such as thanomin.
According to the inventive method, can at first hydrogen fluoride be joined in the part of one or more anhydrous solvents, add remaining solvent after adding again.
Used in the methods of the invention under the situation of two or more different anhydrous solvents, can at first hydrogen fluoride have been joined in one or more these solvents, then one or more other solvents have been joined in the mixture that obtains.Also available aforesaid method prepares two or more hydrofluoric solution respectively, more described two or more solution is mixed.
When other components during not with hydrogen fluoride reaction, the order of adding is unimportant.Other components can be joined hydrogen fluoride in the solution of one or more anhydrous solvents.Also can at first one or more anhydrous solvents and other components be mixed, add hydrogen fluoride then.In addition, other other components and hydrogen fluoride can be joined in one or more anhydrous solvents together.If necessary, can before joining one or more anhydrous solvents, hydrogen fluoride and at least a other components be mixed, again the mixture that obtains is joined in one or more anhydrous solvents subsequently.
When other components are ammonia, the gaseous hydrogen fluoride of one or more anhydrous solvents and aequum can be contacted, add the gaseous ammonia of respective amount then.Also can be at first the gaseous ammonia of solvent and aequum be contacted, add the gaseous hydrogen fluoride of respective amount then.Can with two kinds of gaseous fractions simultaneously and spatial isolation join in one or more solvents.Also can add a kind of in two kinds of gaseous fractions earlier, and behind certain hour, begin to add other gaseous fractions.
In a particularly preferred embodiment of the inventive method, at first handle one or more anhydrous solvents, then as mentioned above with solvent cycle with the gaseous hydrogen fluoride of aequum.Then gaseous ammonia is joined in this uniform solution, with pump successively with the solution circulated that obtains and make it even.
The temperature of control reaction vessel makes that temperature is the highest in the adition process of gaseous ammonia to be no more than 35%, preferably the highlyest is no more than 30 ℃, especially preferably is lower than 30 ℃.
The concentration of Neutral ammonium fluoride high purity solutions prepared according to the methods of the invention only depends on the solubleness of Neutral ammonium fluoride in solvent basically, and can be any level of this solubility range.Also can prepare the saturated solution of Neutral ammonium fluoride in solvent, ammonia and hydrofluoric add-on also can be the amount that makes that Neutral ammonium fluoride gets off with solid precipitation.
In a preferred embodiment of the invention, prepare the high purity solutions of Neutral ammonium fluoride according to the inventive method in one or more solvents, the concentration of described solution is generally 0.1-50% weight, is preferably 1-30% weight, is preferably 2.5-10% weight especially.
In order to prevent to produce volatile ammonia-air mixture, can in container or around the container, use rare gas element, wherein gaseous ammonia is joined and be dissolved with in the hydrofluoric anhydrous solution.Basically any rare gas element such as nitrogen or argon gas are all suitable.Preferably fill it up with solvent and hydrogen fluoride (if required) before, give inert environments at described container.
In principle, all above-mentioned solvents can be used as the solvent for preparing Neutral ammonium fluoride.In a preferred embodiment, use no water-polyol, make spent glycol in an especially preferred embodiment.
The present invention also provides a kind of method that high purity is fluoridized ammonium solution that is used for preparing, and wherein said solution has the free hydrogen fluoride of reproducible constant density.Fluoridize the free hydrofluoric content that comprises in the ammonium solution in high purity prepared in accordance with the present invention and can be simply add gaseous hydrogen fluoride in one or more solvents and gaseous ammonia fixes according to stoichiometry.Make accurate measurement become possibility by the using gas component, thereby make the high purity solutions of the free hydrogen fluoride content that preparation can accurately reappear become possibility with accurate regulation.More particularly, can prepare and contain the hydrofluoric highly purified ammonium fluoride solution of at least 0.01% weight percent free.
Hydrogen fluoride solution by the inventive method preparation can be used for etch process.Can use the inventive method preparation to satisfy the solution of etch process purity requirement.The inventive method also can be used for preparing the solution with the hydrogen fluoride concentration that does not reach so far.Preferred solution of the present invention comprises the hydrogen fluoride of about 35% weight of about 10%-.
In principle, as long as other gaseous fractions dissolve in the solvent, then all above-mentioned anhydrous solvents can be used for the embodiment of the inventive method.In preferred embodiments, the mixture of acetate or acetate and acetic ester, or the mixture of DMSO and DMA all can be used as anhydrous solvent.When using the mixture of DMSO and DMA, the stoichiometry mixture ratio of DMSO and DMA is about 30: 70 to about 70: 30.In a particularly preferred embodiment according to the invention, the hydrofluoric high purity solutions of preparation in the DMSO/DMA mixture, wherein the weight fraction of hydrogen fluoride, DMSO and DMA is identical.
When described other components were used for etched reactant gas (as hydrogenchloride or hydrogen bromide) for other, the order that then adds these gases in the anhydrous solvent was unimportant.Can successively or simultaneously these gases be joined in the anhydrous solvent, if desired, but spatial isolation ground or in a feeder, join together in one or more anhydrous solvents.The method that also can adopt routine techniques to add hydrogen fluoride and add liquefied gas in one or more anhydrous solvents as described above is before joining anhydrous solvent, with other gaseous fraction liquefaction.
According to the inventive method, except gaseous hydrogen fluoride and gaseous ammonia, also gas chlorination hydrogen and/or gas hydrogen bromide can be joined in one or more anhydrous solvents.The addition sequence of each component is unrestricted basically.
The use range of high purity solutions of the present invention is not limited to above-mentioned etching, except gaseous hydrogen fluoride, has also used at least a reactant gas as component in described solution.
Terminology used here " purity " relates to all possible impurity that is comprised in the solution prepared in accordance with the present invention.Metal ion, halide-ions (as chlorion or bromide anion), other negatively charged ion (as nitrate ion, phosphate anion or sulfate ion), organic compound, common particulate (particular) impurity, virus, bacterium and by product (intracellular toxin or mycotoxin) thereof all are possible impurity.
Terminology used here " high purity " is meant that certain foreign matter content is lower than the purity of 1ppb.
Can prepared according to the methods of the inventionly for all possible impurity, be highly purified solution.In an embodiment preferred of the inventive method, prepared high purity solutions with extremely low metal ion content.
According to the inventive method, use for institute and might be highly purified component for the impurity, so that need not to be further purified the high purity solutions that just can meet the purity of user's needs by these component preparations.
According to the needed purity of high purity solutions to be prepared, can use high purity to fluoridize hydrogen and/or one or more high-purity solvent according to the inventive method.When having used at least a above-mentioned other components, this component also can be high purity.
As mentioned above, in order to prepare the high purity solutions with utmost point low metal ion level, the inventive method has been used gaseous hydrogen fluoride, and wherein the content of metal ion is lower than 1ppb, preferably is lower than 100ppt.
With regard to the prepared high purity solutions of the present invention, the example of metal has: aluminium, antimony, arsenic, barium, beryllium, lead, cadmium, calcium, chromium, iron, sow, germanium, gold, indium, potassium, cobalt, copper, lithium, magnesium, manganese, molybdenum, sodium, nickel, platinum, silver, silicon, strontium, thallium, titanium, vanadium, bismuth, zinc, tin or zirconium.
The purity required according to solution to be prepared if desired, can adopt the foreign matter content in the conventional art methods reduction anhydrous solvent, makes it be lower than 1ppb, is more preferably less than 100ppt.Specifically, distillating method be can use, common distillating method or the described anhydrous solvent of microwave radiation distillating method purifying for example adopted.
Therefore, the present invention also provides every metal ion species content to be lower than the high purity solutions of 100ppt.High purity solutions prepared in accordance with the present invention can be used for wherein having used all possible purposes of the solution of hydrogen fluoride or its one or more salt (independent hydrogen fluoride or its salt, and the mixture of hydrogen fluoride and salt thereof).More particularly, be used for semiconductor applications, electronic industry, analytical chemistry and (biology) pharmaceutical field.
High purity solutions prepared according to the methods of the invention is especially suitable for use as etching reagent.Here, high purity of the present invention is fluoridized true particularly useful that the hydrogen fluoride content of ammonia solution can as one man reappear aborning.This feasible etch-rate for solution provides very narrow process window to become possibility.
More particularly, high purity solutions prepared according to the methods of the invention is used for optionally removing organo-metallic residue or organopolysiloxane residue in the plasma etching method of producing wafer.Based on this selectivity, by adding above-mentioned other reactant gases for example hydrogenchloride or hydrogen bromide, the inventive method is particularly conducive to the etching selectivity of control solution.
In another embodiment of the inventive method, water can be sneaked in the high purity solutions to improve etching selectivity.An important advantage of the inventive method is that described high purity solutions is an anhydrous solution, as can using gas hydrogen fluoride, gaseous ammonia and anhydrous solvent prepare high purity and fluoridize ammonium solution, so that in high purity solutions preparation back by adding entry, set unusual accurately and the water-content that can reappear.
Also can after preparation high purity anhydrous degree solution of the present invention, in solution, add the aqueous solution of other components.One of them advantage is that the water-content of the solution for preparing can accurately set, and can add one or more other components by one step in anhydrous solution.The aqueous solution of other components such as other aqueous acids be phosphoric acid, hydrochloric acid or acetic acid aqueous solution for example.
In a particularly preferred embodiment according to the invention, at least a material is joined in the anhydrous solvent as other components, with the surfactivity of influence as the high purity solutions of etching reagent.In this embodiment, can use suitable polarity and apolar substance.This class material is as being aliphatic amide or aromatic amine.The preferred aliphatic amide of chain length that use as 5-12 carbon atom.In order to reach certain solubility, described amine can be substituted, and wherein hydroxyl or halogen can be used as substituting group.
In order to obtain the high purity solutions of required purity, may needing before use, purifying influences surface-active material.Can use any basically suitable conventional art methods here.
The non-restrictive example that proposes below is used for illustrating some aspect of the present invention.Unless stated otherwise, otherwise all umbers and per-cent are by weight, and all temperature are degree centigrade.
Embodiment
Embodiment 1: prepare hydrofluoric ethylene glycol solution
800g ethylene glycol is placed the 1000ml batch container.By a syringe, will be about 80g anhydrous hydrogen fluoride compression and being dissolved in the described ethylene glycol.Analyze the increase that monitors hydrogen fluoride concentration simultaneously.When being 10% weight, concentration stops to add described liquid acid.
After adding, use the pump pressure pipeline with described solution circulated and homogenizing 1 hour.Every metal ion species content of described solution is lower than 100ppt.
Embodiment 2: the ethylene glycol solution of preparation Neutral ammonium fluoride
With nitrogen the 1000ml batch containers is protected 1 hour.Repeat the method for embodiment 1 then, obtain hydrofluoric ethylene glycol solution.
Gaseous ammonia is joined in the described hydrofluoric ethylene glycol solution, and wherein ammonia and hydrofluoric molar ratio are 1: 1.Adding speed by exterior cooling and control ammonia is come controlled temperature, so that temperature is no more than 30 ℃.
After adding all ammonia, solution was circulated 30 minutes under cooling.Every metal ion species content is lower than 100ppt in the solution that obtains.
Embodiment 3-6
In embodiment 3, replace ethylene glycol to repeat embodiment 1 with glacial acetic acid.In embodiment 4, also use glacial acetic acid as solvent, glacial acetic acid and hydrofluoric weight ratio are 90: 10 (720g glacial acetic acid, 80g hydrogen fluoride).Embodiment 5 and embodiment 6 repeats the method for embodiment 4, but the operating weight ratio is that the glacial acetic acid and the hydrogen fluoride of 80: 20 and 70: 30 (is respectively 640g glacial acetic acid and 160g hydrogen fluoride respectively; 560g glacial acetic acid and 240g hydrogen fluoride).
The embodiment of aforementioned each preferred embodiment and description should be understood to illustrate, rather than limit the present invention as claim.Be understood that easily, do not departing under the scope of setting forth as claim of the present invention, can adopt the many variations and the combination of above-mentioned feature.Do not think that these variations have departed from the spirit and scope of the present invention, but all these variations include in the scope of following claims.
Claims (14)
1. one kind prepares and comprises two or more the method for high purity solutions of mixture of hydrogen fluoride or its one or more salt or its, described method comprises hydrogen fluoride joined at least a anhydrous solvent, wherein the hydrogen fluoride of about 35% weight of the about 10%-form of mixtures with gas or liquefied gas form or gas and liquefied gas joined in one or more anhydrous solvents.
2. the process of claim 1 wherein that at least a anhydrous solvent is a polar solvent.
3. the process of claim 1 wherein that at least a anhydrous solvent is selected from polyvalent alcohol, carboxylic acid, carboxylic acid derivative, sulfur-containing organic compound, aliphatic series or aromatics nitrogenous compound and two or more mixture thereof.
4. the method for claim 3, wherein at least a anhydrous solvent is an acetate.
5. the process of claim 1 wherein except that hydrogen fluoride, also use two or more mixture of at least a other gases, at least a other liquid or at least a other solids or its as component.
6. the method for claim 5, wherein using gas ammonia is as other components.
7. the method for claim 6, wherein at least a anhydrous solvent is DMA, DMSO or its mixture.
8. the method for claim 5, wherein using gas hydrogenchloride, gas hydrogen bromide or its mixture are as one or more other components.
9. the process of claim 1 wherein and use every metal ion species content to be lower than the hydrogen fluoride of 1ppb.
10. the process of claim 1 wherein that every metal ion species content of described solution is lower than 100ppt.
11. a high purity solutions comprises the hydrogen fluoride of about 35% weight of about 10-at least a anhydrous solvent of described solution.
12. the solution of claim 11, wherein said solvent are acetate.
13. the solution of claim 11, the content of every metal ion species is lower than 100ppt in the wherein said solution.
14. the solution of claim 11, described solution also comprise one or more components that is selected from water, Neutral ammonium fluoride, hydrogenchloride and hydrogen bromide.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38637202P | 2002-06-05 | 2002-06-05 | |
| US60/386,372 | 2002-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1671618A true CN1671618A (en) | 2005-09-21 |
Family
ID=29736158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA038184532A Pending CN1671618A (en) | 2002-06-05 | 2003-06-05 | Method for producing highly pure anhydrous solutions containing hydrogen fluoride |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1509476A1 (en) |
| JP (1) | JP2005528316A (en) |
| KR (1) | KR20050005541A (en) |
| CN (1) | CN1671618A (en) |
| AU (1) | AU2003273958A1 (en) |
| WO (1) | WO2003104144A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8153095B2 (en) | 1999-03-29 | 2012-04-10 | Honeywell International Inc. | Method for producing highly pure solutions using gaseous hydrogen fluoride |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19914243A1 (en) * | 1999-03-29 | 2000-10-05 | Riedel De Haen Gmbh | Process for the preparation of high-purity solutions using gaseous hydrogen fluoride |
-
2003
- 2003-06-05 AU AU2003273958A patent/AU2003273958A1/en not_active Abandoned
- 2003-06-05 EP EP03741886A patent/EP1509476A1/en not_active Ceased
- 2003-06-05 KR KR10-2004-7019811A patent/KR20050005541A/en not_active Application Discontinuation
- 2003-06-05 JP JP2004511220A patent/JP2005528316A/en not_active Withdrawn
- 2003-06-05 CN CNA038184532A patent/CN1671618A/en active Pending
- 2003-06-05 WO PCT/US2003/017852 patent/WO2003104144A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005528316A (en) | 2005-09-22 |
| AU2003273958A1 (en) | 2003-12-22 |
| EP1509476A1 (en) | 2005-03-02 |
| KR20050005541A (en) | 2005-01-13 |
| WO2003104144A1 (en) | 2003-12-18 |
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