CN1664978A - A multilayer structure field emission display - Google Patents
A multilayer structure field emission display Download PDFInfo
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- CN1664978A CN1664978A CN 200510033714 CN200510033714A CN1664978A CN 1664978 A CN1664978 A CN 1664978A CN 200510033714 CN200510033714 CN 200510033714 CN 200510033714 A CN200510033714 A CN 200510033714A CN 1664978 A CN1664978 A CN 1664978A
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- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000000843 powder Substances 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 239000007787 solid Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002127 nanobelt Substances 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 3
- 239000002070 nanowire Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- -1 and pottery Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 238000010276 construction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
The invention provides a field emission display with simple process, excellent property and multilayer structure, comprising cathode substrate, grid substrate and anode substrate, mutually insulated by solid insulating materials and provided with working voltages, respectively, and the three substrates are fixed at preset intervals and vacuum-packaged, where the said cathode substrate is provided with cathodes as electron emission sources, the said grid substrate is made with grid holes limiting electron channels and a grid electrode is arranged in the position corresponding to a grid hole, and the said anode substrate is coated with conductive layer and phosphor powder. The invention simplifies the process complexity and reduces the processing cost; besides, on the basis of multilayer structure, can conveniently make focusing pole, effectively focusing electron beams emitted by cathode electron emission sources and thus eliminating the interference between pixels.
Description
Technical field
The present invention relates to display, more particularly, relate to a kind of Field Emission Display of sandwich construction.
Background technology
Flat-panel monitor is widely used with its frivolous advantage.Common flat-panel monitor comprises LCD (LCD), plasma scope (PDP), electroluminescence (EL) display, two-way array (CRT) display and Field Emission Display (FED) etc.Therefore wherein, the liquid crystal display displays effect is clear and power consumption is very low, has occupied the market of notebook and part desktop computer displays, but higher and have response time problem because of its cost, is difficult to use in and realizes the high-speed demonstration of large-screen.And product power consumption height such as plasma scope commonly used and plane matrix display, thermal loss is bigger, still have its unvanquishable shortcoming Field Emission Display (FED) to adopt the cold cathode array, show by the luminous realization of cold-cathode electron source emitting electrons impact fluorescence powder as electron source.The displaying principle of FED device is identical with traditional C RT, therefore possess the CRT device active illuminating, picture quality is good, display speed is fast, brightness is high, the high plurality of advantages of resolution.Simultaneously, because adopted field emission cold cathode in the FED device, so power consumption is very low, and volume is also very little.
In the prior art, Field Emission Display is generally three-stage structure, as shown in Figure 1, promptly is made up of negative electrode 3, grid 4 and anode 6.Negative electrode generally adopts micro tips array cold cathode, film cold cathode or carbon nano-tube cold cathode, grid 4 general micro fabrication or screen printed film cold cathode or the carbon nano-tube cold cathodes of adopting, and grid 4 general micro fabrication or the silk-screen printing techniques of adopting prepare.At first on substrate 1, make negative electrode 3, then around negative electrode 3, make insulating barrier 2, and on insulating barrier 2, make grid 4.Final substrate 1 is assembled into display device with anode 6 by insulation stent 5.As can be seen, above-mentioned existing processing step is comparatively complicated, and the cost that causes processing display also compares expensive.
Summary of the invention
It is simple to the invention provides a kind of technology, and function admirable has the Field Emission Display of sandwich construction.
Multilayer structure field emission display of the present invention is made up of three laminar substrates, comprise cathode base, grid substrate and anode substrate use solid insulating material to keep mutually insulated also to be added with operating voltage respectively between each substrate, the fixing at certain intervals position toward each other of this three laminar substrate.Whole sandwich construction display can form an airtight space by encapsulant, and gas inside can be taken away by vacuum pump, and forms vacuum in the sandwich construction display.Described cathode base is provided with the negative electrode as electron emission source, has the grid hole that limits electron channel on the described grid substrate, and is installing gate electrode with the position of corresponding grid hole.Be covered with conductive layer and phosphor powder layer on the described anode substrate.
During work, entire device inside is in vacuum state.Apply voltage between a certain row of certain delegation of negative electrode and grid, electronics will come out from cathode emission in the effect of grid voltage, by grid hole, get on the anode luminous, thereby realize the demonstration of some pixels.
Multilayer structure field emission display of the present invention adopts on the multi layer substrate and makes the structure that negative electrode, grid and phosphor screen are assembled again respectively, has so just simplified the complexity of technology and has reduced the technology cost.Simultaneously, on the basis of sandwich construction of the present invention, can make focusing electrode easily, beam forming cathode electron source electrons emitted bundle is eliminated crosstalking between the pixel effectively.
Description of drawings
Fig. 1 is the Field Emission Display structure of existing technology;
Fig. 2 is each substrate three-dimensional structure diagram of multilayer structure field emission display of the present invention;
Fig. 3 is the sectional view of multilayer structure field emission display of the present invention under the situation of no focusing electrode, and wherein Fig. 3 (a) makes the schematic diagram of grid substrate for glass or ceramic material, the schematic diagram of the grid substrate that Fig. 3 (b) makes for metal material;
Fig. 4 is that multilayer structure field emission display of the present invention is at the sectional view that has under the situation of focusing electrode, wherein Fig. 4 (a) makes the schematic diagram of preparation focus electrode after the grid substrate for glass or ceramic material, and Fig. 4 (b) makes the schematic diagram of preparation focus electrode after the grid substrate for metal material;
Fig. 5 is the shape figure of the grid hole of multilayer structure field emission display of the present invention, wherein: (a) circle, (b) ellipse, (c) square, (d) rectangle, (e) strip;
Fig. 6 is for adopting the display image of certain picture point under different cathode currents of the multilayer structure field emission display that the present invention realized, wherein: the displayed image when Fig. 6 (a) is 1 microampere of cathode current, displayed image when Fig. 6 (b) is 3 microamperes of cathode currents, the displayed image when Fig. 6 (c) is 10 microamperes of cathode currents;
Fig. 7 is for adopting multilayer structure field emission display that the present invention realized with the addressing experimental result of grid to the single-point pixel.
Among the figure: substrate 1, insulating barrier 2,18,19, negative electrode 3,9, grid 4, insulation stent 5, anode 6, cathode base 7, cathode electrode bar 8, gate electrode 10, grid substrate 11, grid hole 12, anode substrate 13, transparency conducting layer 14, phosphor powder layer 15, insulator 16, focus electrode 17, insulating thin layer 18,19
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
As shown in Figure 2: the material of cathode base 7 can be glass, pottery, metal or silicon chip.At first, for glass or ceramic substrate, can on them, prepare the metal electrode of conduction or transparent conductive electrode (, being called for short ITO) as cathode electrode bar 8, preparation negative electrode 9 on cathode electrode bar 8 as indium tin oxide target.Negative electrode 9 can be micro tips array cold cathode, film cold cathode, carbon nano-tube cold cathode, metal or semiconductor nano material cold cathode such as nano wire, nano belt, nanometer rods etc.Secondly, for metal or silicon chip substrate,, can directly on them, make negative electrode 9 owing to itself conduct electricity.Negative electrode 9 can be micro tips array cold cathode, film cold cathode, carbon nano-tube cold cathode, metal or semiconductor nano material cold cathode such as nano wire, nano belt, nanometer rods etc.The lead-in wire of cathode electrode bar 8 can be drawn in the one or both sides of cathode base.
The material of grid substrate 11 can be a pottery, glass or metal.At first on them, adopt machine drilling, chemical corrosion, sandblast or laser processing technology to prepare grid hole 12.As shown in Figure 5, the shape of grid hole can be circular, oval, square, rectangle and strip etc.For the grid substrate of glass or ceramic material, shown in Fig. 3 (a), prepare strip gate electrode 10 in the position of the lower surface grid hole 12 of grid substrate 11.For the metal gates substrate, shown in Fig. 3 (b), can adopt at the grid substrate lower surface to prepare a layer insulating 18, then preparation strip gate electrode 10 on insulating barrier.The material of grid 10 is a metal, is shaped as strip.Can make methods such as deposited by electron beam evaporation, magnetron sputtering, make gate electrode, or directly adopt the way of silk screen printing to print strip gate electrode 10 in conjunction with photoetching method.Common strip gate electrode 10 and 8 one-tenth square crossings of cathode electrode bar.Like this, when when gate electrode and cathode electrode apply high potential and electronegative potential respectively, can emitting electrons at the negative electrode of the position that their intersect, thus realize addressing to a certain negative electrode.The lead-in wire of gate electrode bar can be drawn in the one or both sides of grid substrate 11.
When using glass or ceramic gates substrate, shown in Fig. 4 (a), can prepare focus electrode 17 in the position of the upper surface grid hole 12 of grid substrate 11.Focus electrode also can be the conductive layer of full wafer.For the metal gates substrate, shown in Fig. 4 (b), can adopt metal substrate is focusing electrode, or focusing electrode is done into strips.When on the metal gates substrate, making the bar shaped focusing electrode, at first prepare a layer insulating 19, then preparation focus electrode 17 on insulating barrier at the grid substrate upper surface.The material of focus electrode 17 is a metal, is shaped as strip.Can make methods such as deposited by electron beam evaporation, magnetron sputtering, make focus electrode, or directly adopt the way of silk screen printing to print strip focus electrode 17 in conjunction with photoetching method.8 one-tenth square crossings of strip focus electrode 17 and cathode electrode bar or parallel with cathode electrode bar 8,17 orientations of strip focus electrode are decided on the convenience of lead-in wire, do not have special requirement.The lead-in wire of strip focus electrode 17 can be drawn in the one or both sides of grid substrate 11.
The material of anode substrate 13 is a glass.At first, at making transparency conducting layer 14 on glass (, being called for short ITO), the phosphor powder layer 15 of preparation bar shaped or point-like on transparency conducting layer 14 as indium tin oxide target.For the display of monochrome, also can adopt the phosphor powder layer of preparation full wafer on transparency conducting layer.Another kind of scheme is, preparation phosphor powder layer earlier on anode substrate 13, evaporation of aluminum in the above then.
After above-mentioned three laminar substrates complete, with each substrate mutually insulated fit together.During assembling, the fluorescent material picture point of negative electrode, grid and anode is aimed at mutually.Use the solid insulating material insulation between each substrate.Can adopt bonding agent, for example glass powder with low melting point is fixed above-mentioned three laminar substrate mutual alignments and seal.Be the spacing between the control basal plate, can print the supporter that insulate by the method for silk screen printing in the relevant position on substrate.Or adopt insulator to make supporter, and by the pressure fixing between the substrate.
Below, we are the example of an enforcement of 3 explanations in conjunction with the accompanying drawings.At first, clean glass cathode base 7, adopt electron beam evaporation on glass substrate, to prepare the electroconductive ITO electrode, adopt the method for photoetching to make ITO cathode electrode bar 8, preparation negative electrode 9 on cathode electrode bar 8.Negative electrode 9 adopts carbon nano-tube, adopts the method preparation of silk screen printing.
The material of grid substrate 11 adopts potsherd.At first on it, adopt laser processing technology to prepare grid hole 12, grid hole be shaped as circle.Adopt the method for mask, on grid substrate 11, prepare the crome metal bar with magnetron sputtering.
On glass anode substrate 13, make ITO conductive layer 14, preparation bar shaped phosphor powder layer on ITO conductive layer 14.
After above-mentioned three laminar substrates complete, use the solid insulating material insulation between grid and negative electrode, grid and the anode.Each substrate adopts glass powder with low melting point that above-mentioned three laminar substrate mutual alignments are fixedly fitted together mutually insulated.During assembling, the fluorescent material picture point of negative electrode, grid and anode is aimed at mutually.
After the device assembling finished, entire device inside is under the vacuum state to be tested.Apply voltage between a certain row of certain delegation of negative electrode and grid, electronics comes out from cathode emission in the effect of grid voltage, by grid hole, gets on the anode luminously, realizes the demonstration of some pixels.Fig. 6 is for adopting the display image of certain picture point under different cathode currents of multilayer structure field emission display that the present invention realizes.The demonstration situation of display when Fig. 6 (a) and (b) and (c) be respectively that cathode current is 1 microampere, 3 microamperes and 10 microamperes.
Fig. 7 is for adopting multilayer structure field emission display that the present invention realizes with the addressing experimental result of grid to single pixel.Can see by Fig. 7, add voltage, can carry out effective addressing single picture element at different grids and cathode strip.
Use method of the present invention, promptly can realize making the display of different size by the substrate that adopts different size.Also can be assembled for large-area demonstration with the substrate of reduced size.Display of the present invention can be applicable to all kinds of display terminals, TV etc., is specially adapted to the digital high-definition television more than 40 inches.
Claims (8)
1. multilayer structure field emission display is characterized in that:
Comprise cathode base (7), grid substrate (11) and anode substrate (13) use solid insulating material to keep mutually insulated also to be added with operating voltage respectively between each substrate, and this three laminar substrate is with predetermined space fixing position and Vacuum Package toward each other;
Described cathode base (7) is provided with the negative electrode (9) as electron emission source;
Have the grid hole (12) that limits electron channel on the described grid substrate (11), and installing gate electrode (10) with the position of corresponding grid hole.
Be covered with conductive layer (14) and phosphor powder layer (15) on the described anode substrate (13).
2. multilayer structure field emission display according to claim 1 is characterized in that: the material of cathode base (7), grid substrate (11), anode substrate (13) is a glass, and pottery, metal or silicon chip also can be the combinations of above-mentioned four kinds of materials.
3. according to claim 1 or 2 described multilayer structure field emission displays, it is characterized in that: when the material of described cathode base (7) is metal or silicon chip, negative electrode (9) is set directly thereon; When the material of described cathode base (7) was glass, pottery, the metal electrode of preparation conduction in the above or transparency conductive electrode be as cathode electrode bar (8), and install negative electrode (9) on cathode electrode bar (8).
4. according to the described multilayer structure field emission display of claim 3, it is characterized in that: described negative electrode (9) is by micro tips array cold cathode, film cold cathode, carbon nano-tube cold cathode, metal or semiconductor nano material cold cathode are nano wire, nano belt, nanometer rods cold cathode a kind of formation wherein.
5. according to the described multilayer structure field emission display of claim 1, it is characterized in that: described grid hole (12) be shaped as circle, ellipse, rectangle, square or strip, described gate electrode (10) is the strip metal electrode, and described strip metal gate electrode becomes square crossing with cathode electrode bar (8).
6. according to claim 1 or 2 described multilayer structure field emission displays, it is characterized in that: described grid substrate (11) is insulated substrate.
7. according to the described multilayer structure field emission display of claim 5, it is characterized in that: when adopting glass or ceramic making grid substrate (11), directly install gate electrode (10) in grid substrate (11) lower surface grid hole (12) position, when adopting metal to make grid substrate, insulating barrier (18) is set on grid substrate (11) and on it, makes the conduction strip gate electrode (10) of mutually insulated.
8. according to the described multilayer structure field emission display of claim 5, it is characterized in that: when using glass or ceramic making grid substrate (11), install focus electrode (17) in the position of the upper surface grid hole (12) of grid substrate (11).When using the metal gates substrate, can adopt full wafer metal gates substrate is focusing electrode, or at grid substrate (11) upper surface making insulating barrier (19), and on insulating barrier (19), pacify focus electrode (17), described focus electrode (17) becomes square crossing or parallel with cathode electrode bar (8).
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100337143A CN100339932C (en) | 2005-03-24 | 2005-03-24 | A multilayer structure field emission display |
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| CNB2005100337143A CN100339932C (en) | 2005-03-24 | 2005-03-24 | A multilayer structure field emission display |
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| CN1664978A true CN1664978A (en) | 2005-09-07 |
| CN100339932C CN100339932C (en) | 2007-09-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428185A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十二研究所 | Fabrication method of quasi-integrated grid-controlled carbon nanotube/nanowire field emission cathode |
| CN105551911A (en) * | 2015-12-23 | 2016-05-04 | 中国电子科技集团公司第十二研究所 | Manufacturing method for auto-alignment grid electrode carbon nanotube/nanowire field emitting negative electrode |
| CN109256310A (en) * | 2018-10-10 | 2019-01-22 | 中山大学 | Addressable nanometer of cold cathode X-ray plane source of one kind and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100263310B1 (en) * | 1998-04-02 | 2000-08-01 | 김순택 | Flat panel display having field emission cathode and method of preparing the same |
| KR100863952B1 (en) * | 2002-08-21 | 2008-10-16 | 삼성에스디아이 주식회사 | Field emission display device having carbon-based emitter |
| JP3954002B2 (en) * | 2002-12-24 | 2007-08-08 | 韓國電子通信研究院 | Field emission display |
| CN100419943C (en) * | 2003-04-03 | 2008-09-17 | 清华大学 | Field emission display device |
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2005
- 2005-03-24 CN CNB2005100337143A patent/CN100339932C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428185A (en) * | 2015-12-23 | 2016-03-23 | 中国电子科技集团公司第十二研究所 | Fabrication method of quasi-integrated grid-controlled carbon nanotube/nanowire field emission cathode |
| CN105551911A (en) * | 2015-12-23 | 2016-05-04 | 中国电子科技集团公司第十二研究所 | Manufacturing method for auto-alignment grid electrode carbon nanotube/nanowire field emitting negative electrode |
| CN105428185B (en) * | 2015-12-23 | 2017-04-12 | 中国电子科技集团公司第十二研究所 | Fabrication method of quasi-integrated grid-controlled carbon nanotube/nanowire field emission cathode |
| CN109256310A (en) * | 2018-10-10 | 2019-01-22 | 中山大学 | Addressable nanometer of cold cathode X-ray plane source of one kind and preparation method thereof |
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| Publication number | Publication date |
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| CN100339932C (en) | 2007-09-26 |
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