CN1661343A - Brightness sensor - Google Patents
Brightness sensor Download PDFInfo
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- CN1661343A CN1661343A CN2005100063340A CN200510006334A CN1661343A CN 1661343 A CN1661343 A CN 1661343A CN 2005100063340 A CN2005100063340 A CN 2005100063340A CN 200510006334 A CN200510006334 A CN 200510006334A CN 1661343 A CN1661343 A CN 1661343A
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Abstract
The invention provides a brightness sensor having the higher resolution in illuminance detection at the case of the lower illuminance even if using a photoelectric conversion element instead of CdS. The brightness sensor comprises a serial circuit in which a phototransistor PTr for varying passing-by current magnitude according to scale of illuminance and a diode Dl are connected in series. When a direct current voltage is applied to the two ends of the serial circuit, the two-end voltage of the diode Dl is outputted as a detected voltage V0. Because the diode Dl has the nonlinear characteristic of the smaller changing ratio of the two-end voltage to the passing-by current as the larger passing-by current in the low current regime before reaching the lowering voltage of the forward direction, in order to operate the diode Dl at the low current regime, the lower passing-by current with respect to illuminance is selected at the phototransistor PTr and the changing ratio of the detected voltage V0 with respect to illuminance is larger as the illuminance is lower.
Description
Technical field
The present invention has the photoelectromotive force mechanism that produces photoelectromotive force with illumination about use, the luminance sensor of the photo-electric conversion element that determines one to one with respect to photoelectromotive force by the size of passing through electric current between two ends.
Background technology
Known just like Figure 18, use the luminance sensor of the CdS3 that changes with the illumination resistance value.This kind luminance sensor has the structure that is connected in series with detection resistance R5 with CdS3, applies in the series circuit of CdS3 and detection resistance R5 that the both end voltage with detection resistance R5 detects illumination as detecting voltage V0 output under the state of DC voltage.
The general luminance sensor of for example detectable illumination range about 5-10000Lx (lux), as Figure 19, the bigger then rate of change with respect to the detection voltage V0 of illumination of illumination is littler, detects voltage V0 and plays nonlinearities change with respect to illumination.In other words, the heal resolution of little luminance detection of illumination is higher, so to the detection of the broad illumination range of 10000Lx, also can detect for example small illumination change of the illumination range below the 100Lx.Generally known, human visual system is that the illumination little resolution that heals is higher, is non-linear for illumination, uses the luminance sensor of CdS3 promptly to have characteristic near human visual system.
But, the CdS3 of above-mentioned luminance sensor contains cadmium, in when manufacturing, arranged, cause the significant problem of load for environment when discarding, replace the proposal (reference example such as patent documentation 1) that CdS3 uses arbitrary photo-electric conversion element of phototransistor, photodiode, photoelectricity IC instead so have.Replace these photo-electric conversion elements that CdS3 uses, have the photoelectromotive force mechanism that produces photoelectromotive force with illumination, determine one to one with respect to photoelectromotive force by the size of passing through electric current between two ends.For example use luminance sensor such as Figure 20 of phototransistor PTr, series circuit replacement CdS3 with detection resistance R5 in the luminance sensor of the use CdS3 of Figure 18 constitutes with phototransistor PTr, detects and detection illumination as detecting voltage V0 as the both end voltage of above-mentioned luminance sensor with detection resistance R5.
Above-mentioned various luminance sensor is provided with, and respectively detects the comparator C P1 of voltage V0 and the threshold value voltage V2 that sets according to variable resistor VR1, and illumination is changed with the illumination size that is equivalent to threshold value voltage V2 and then made the output Vout of comparator C P1 anti-phase.
And use the luminance sensor of photo-electric conversion element, and the general luminance sensor of for example detectable illumination range about 5-10000Lx, the size by electric current plays linear the variation with respect to illumination.Therefore, hinder R5, result from the detection voltage V0 at detection resistance R5 two ends, promptly play linear the variation with respect to illumination with the detection of passing through by electric current.Main points are, illumination range is consistent to be set the resolution of the luminance detection of luminance sensor in order can detect at all, be detectable luminance sensor for example with the illumination range about 0-100Lx, the Figure 21 that represents with logarithm as illumination (transverse axis), at whole illumination ranges of 0-100Lx, the resolution of luminance detection is higher.
See patent documentation 1 Jap.P. spy open the 2003-130729 communique (the 2nd page, Fig. 1).
But, use photo-electric conversion element to constitute luminance sensor, then because of the luminance detection resolution unanimity of detectable whole illumination ranges, can't be as using the luminance sensor of CdS3, the illumination little luminance detection resolution that heals is higher, have the characteristic near human visual system, generation can't realize conforming with the problem of the luminance detection of human visual system.
Summary of the invention
The present invention proposes in view of the above problems, and its purpose is providing a kind of replacement CdS to use photo-electric conversion element instead, simultaneously as the luminance sensor that uses CdS, and the illumination little then luminance detection resolution high luminance sensor of healing of healing.
According to a first aspect of the invention, the present invention is characterized by, by having the photoelectromotive force mechanism that produces photoelectromotive force with illumination, the photo-electric conversion element that determines one to one with respect to photoelectromotive force by the size of passing through electric current between two ends, and in the series circuit of photo-electric conversion element apply DC voltage diode itself so that the direction that the electric current forward passes through is connected with both end voltage as the nonlinear element formation that detects voltage output, make by electric current and more then circulate, detection voltage is changed with above-mentioned nonlinear characteristic with respect to the nonlinear characteristic scope that heals little by the detection voltage change ratio of electric current in the electric current that passes through with nonlinear element.
Generally, diode have forward pass through pass through the electric current low current and in the scope of both end voltage till reaching the forward drop-out voltage, both end voltage makes by electric current and heals big both end voltage with respect to the little characteristic that heals by the rate of change of electric current with respect to playing nonlinearities change by electric current.Structure according to a first aspect of the invention, be conceived to the characteristic of this diode and propose, when photo-electric conversion element makes with respect to the passing through electric current and pass through of the proportional size of illumination, both end voltage by the bigger then diode of electric current is littler with respect to the rate of change by electric current, so as the luminance sensor that uses CdS, detect voltage and play nonlinearities change with respect to illumination, illumination is bigger, and then the detection voltage change ratio with respect to illumination is littler.Therefore, use photo-electric conversion element,, can realize the illumination resolution of the little luminance detection high luminance sensor of healing of healing as the luminance sensor that uses CdS.
According to a second aspect of the invention, the present invention is characterized by, by having the photoelectromotive force mechanism that produces photoelectromotive force with illumination, the photo-electric conversion element that determines one to one with respect to photoelectromotive force by the size of passing through electric current between two ends, and in the series circuit of photo-electric conversion element apply DC voltage Zener diode itself so that the direction that current reversal passes through is connected with both end voltage as the nonlinear element formation that detects voltage output, make by electric current and more then circulate, detection voltage is changed with above-mentioned nonlinear characteristic with respect to the nonlinear characteristic scope that heals little by the detection voltage change ratio of electric current in the electric current that passes through with nonlinear element.
Generally, it is in the scope till low current and both end voltage reach Zener voltage that Zener diode has at the electric current that passes through that oppositely passes through, both end voltage makes by the bigger then both end voltage of electric current with respect to the little characteristic that heals by the rate of change of electric current with respect to playing nonlinearities change by electric current.Structure according to a second aspect of the invention, be conceived to the characteristic of this Zener diode and propose, when photo-electric conversion element makes with respect to the passing through electric current and pass through of the proportional size of illumination, both end voltage by the bigger then Zener diode of electric current is littler with respect to the rate of change by electric current, so as the luminance sensor that uses CdS, detect voltage and play nonlinearities change with respect to illumination, illumination is bigger, and then the detection voltage change ratio with respect to illumination is littler.Therefore, use photo-electric conversion element,, can realize the illumination resolution of the little luminance detection high luminance sensor of healing of healing as the luminance sensor that uses CdS.
According to a third aspect of the present invention, in according to the invention aspect first or two of the present invention, wherein also additionally use the amplifying circuit of operational amplifier to amplify above-mentioned detection voltage.
With this structure, detect the output voltage of amplifying circuit, then the luminance detection resolution height of detectable whole illumination ranges.
According to a fourth aspect of the present invention, in according to the invention aspect first or two of the present invention, wherein also additional above-mentioned photo-electric conversion element and the output resistance of connect with above-mentioned nonlinear element, the both end voltage of nonlinear element add export use resistance both end voltage as detection voltage.
With this structure, detect voltage with respect to the resistance value bed hedgehopping of just using resistance by the rate of change of electric current with output, thus detectable whole illumination range, luminance detection resolution height.
According to a fifth aspect of the present invention, in according to the invention aspect first or two of the present invention, wherein also insert the brownout resistance of the above-mentioned size by electric current of restriction at the tie point of above-mentioned photo-electric conversion element and above-mentioned nonlinear element.
With this structure, because of the brownout resistance size by electric current is limited, so can prevent damaging because of excess current of photo-electric conversion element and nonlinear element when illumination is big.
According to a sixth aspect of the invention, in according to the invention aspect first or two of the present invention, wherein above-mentioned photo-electric conversion element and an end above-mentioned nonlinear element opposition side, form series circuit jointly with photo-electric conversion element and nonlinear element, the connection that the restricted above-mentioned brownout of passing through the size of electric current hinders.
With this structure,, can prevent damaging because of excess current of photo-electric conversion element and nonlinear element when illumination is big because of the brownout resistance size by electric current is limited.But the effect phase of more restricted current sinking.
The present invention is conceived to, the characteristic that the electric current both end voltage plays nonlinearities change of passing through with respect to nonlinear element proposes, photo-electric conversion element is with respect to the passing through electric current and pass through of the proportional size of illumination the time, both end voltage by the bigger then nonlinear element of electric current is littler with respect to the rate of change by electric current, so as the luminance sensor that uses CdS, detect voltage and play nonlinearities change with respect to illumination and make bigger then the rate of change of illumination littler with respect to the detection voltage of illumination.Therefore, use photo-electric conversion element,, can realize the illumination resolution of the little luminance detection high luminance sensor of healing of healing as the luminance sensor that uses CdS.
Description of drawings
The circuit diagram of Fig. 1 embodiments of the present invention 1.
The nonlinear characteristic synoptic diagram of the diode that Fig. 2 is the same.
The work synoptic diagram of the detection voltage that Fig. 3 (a) expression is the same, the work synoptic diagram of the output voltage of the amplifying circuit that Fig. 3 (b) expression is the same.
The synoptic diagram of the threshold value voltage that Fig. 4 is the same.
Situation when Fig. 5 represents the same " output voltage＜threshold value voltage ", (a) the work synoptic diagram of the input of expression comparer, (b) the work synoptic diagram of the output of expression comparer.
Situation when Fig. 6 represents the same " output voltage＞threshold value voltage ", (a) the work synoptic diagram of the input of expression comparer, (b) the work synoptic diagram of the output of expression comparer.
The circuit diagram of Fig. 7 embodiments of the present invention 2.
Fig. 8 represents the synoptic diagram of the nonlinear characteristic of the same Zener diode.
Fig. 9 represents the work synoptic diagram of the same detection voltage.
Figure 10 represents the synoptic diagram of the temperature characterisitic of diode.
The circuit diagram of Figure 11 embodiments of the present invention 3.
Establish the circuit diagram of output in Figure 12 embodiments of the present invention 4 with 1 example of resistance.
Figure 13 represents the same another the routine circuit diagram that resistance is used in output of establishing.
Figure 14 represents the same circuit diagram that the another example of resistance is used in output of establishing.
Figure 15 represents the circuit diagram of the same system of limiting with 1 example of resistance.
Figure 16 represents the same system of limiting another routine circuit diagram with resistance.
Figure 17 represents the circuit diagram of the same system of limiting with the another example of resistance.
Figure 18 represents to use the circuit diagram of the known example of CdS.
Figure 19 represents the work synoptic diagram of the same detection voltage.
Figure 20 represents to use the known circuit diagram of phototransistor.
Figure 21 represents the work synoptic diagram of the same detection voltage.
The component symbol explanation:
1 amplifying circuit
2 photoelectricity IC (photo-electric conversion element)
D1 diode (nonlinear element)
PTr phototransistor (photo-electric conversion element)
The OP1 operational amplifier
R3 brownout resistance
R4 output resistance
V0 detects voltage
ZD1 Zener diode (nonlinear element)
Embodiment
(embodiment 1)
The luminance sensor of present embodiment such as Fig. 1 have photo-electric conversion element phototransistor PTr, and the structure of non-linear element diode D1 series connection.Present embodiment explains at the luminance sensor of 5-10000Lx can detect illumination range as the luminance sensor of the use CdS that illustrates with known configurations.
The series circuit of phototransistor PTr and diode D1 constitutes: the electric current that passes through by this series circuit is limited by phototransistor PTr, the emitter of diode D1 phototransistor PTr is connected with the anode of diode D1 simultaneously, make by the forward of electric current and pass through, because of the very positive DC voltage of current collection of DC current phototransistor PTr puts between two ends in diode D1.Under this state, promptly constitute with the both end voltage of diode D1 and export as detecting voltage V0.When this selects for use phototransistor PTr to make the maximal value that reaches the illumination range that can detect illumination, the electric current that passes through by diode D1 still is sufficient low current, illumination with respect to 10000Lx is less by electric current, and detects the forward drop-out voltage that voltage V0 does not reach diode D1.
And phototransistor PTr produces photoelectromotive force with illumination, when making current collection very just apply DC voltage simultaneously from the size of passing through electric current of collector by emitter with respect to the size of photoelectromotive force decision maker one to one.In the illumination range with the employed 5-10000Lx of luminance sensor of present embodiment, phototransistor PTr pass through electric current and illumination has proportionate relationship.On the other hand, diode D1 has, as the Fig. 2 that represents with logarithm by electric current (longitudinal axis), forward passes through, and to pass through electric current be low current and do not reach the scope of forward drop-out voltage in the electric current both end voltage, by electric current more then, with respect to the rate of change of the both end voltage by the electric current little characteristic that heals.That is have, when being low current by electric current, both end voltage is with respect to the characteristic that plays nonlinearities change by electric current.To call the nonlinear characteristic that this characteristic is diode D1 in the following text.
Present embodiment such as above-mentioned, make and play the linear electric current that passes through that changes with respect to illumination and pass through in the forward of diode D1, utilize the nonlinear characteristic of diode D1, realizing as the luminance sensor that uses CdS, the illumination resolution of the little luminance detection high luminance sensor of healing of healing.
The below work of this luminance sensor of explanation.Apply DC voltage between the series circuit two ends of phototransistor PTr and diode D1, then the electric current that passes through by this series circuit plays linear the variation because of phototransistor PTr with respect to illumination.Should pass through diode D1 in forward by electric current,, produce between diode D1 two ends bigger with respect to the detection voltage of healing little by the rate of change of electric current by electric current then because of the nonlinear characteristic of diode D1.Therefore, detect voltage V0 such as Fig. 3 (a), play nonlinearities change with respect to illumination and make illumination bigger littler with respect to the rate of change of illumination.
In other words, the illumination little luminance detection resolution that heals is higher, event is the illumination range below 100Lx for example, the subtle change of illumination can be exported as the variation that detects voltage V0, the result, the luminance sensor of the use photo-electric conversion element of present embodiment promptly has characteristic near human visual system as the luminance sensor that uses CdS.
The luminance sensor of present embodiment possesses and will detect the amplifying circuit 1 that voltage V0 amplifies the use operational amplifier OP1 of output.Amplifying circuit 1, between the inverting input of operational amplifier OP1 and output terminal, be connected to feedback resistance R1, simultaneously be connected to the noninverting amplifying circuit of input with resistance R2 formation between the negative pole of the inverting input of operational amplifier OP1 and direct supply, the non-inverting input of operational amplifier OP1 is connected to the tie point of phototransistor PTr and diode D1.Because of possessing amplifying circuit 1, the output voltage V 1 of luminance sensor as Fig. 3 (b), becomes the output voltage V 1 of constant times because of detecting voltage V0, and the luminance detection resolution of detectable whole illumination ranges improves, and can detect more small illumination change.
And the luminance sensor of present embodiment possesses as known configurations, and with the output voltage V 1 and the threshold value voltage V2 comparison of amplifying circuit 1, the output voltage V 1 of amplifying circuit 1 is changed with the size of threshold value voltage V2 and then exported the anti-phase comparator C P1 of Vout.This threshold value voltage V2, what apply the variable resistor VR1 of DC voltage between two ends certainly pulls out the line P person of pulling out, and utilizes the dividing potential drop of variable resistor VR1, as Fig. 4, proportional with respect to variable resistor VR1 one end and the resistance value of pulling out between the line P.Comparator C P1, because of the output terminal that is connected with amplifying circuit 1 in inverting input is simultaneously pulled out line P in what non-inverting input connected variable resistor VR1, its work such as Fig. 5 make output Vout during the output voltage V 1 of amplifying circuit 1 is less than threshold value voltage V2 be the H level, and making output Vout as Fig. 6 during the output voltage V 1 of amplifying circuit 1 is greater than threshold value voltage V2 is the L level.
(embodiment 2)
The luminance sensor of present embodiment, as Fig. 7, together with the nonlinear element of phototransistor PTr formation series circuit, replace diode and make by the reverse circulated connection of electric current in Zener diode ZD1 with Zener diode ZD1, this luminance sensor with embodiment 1 is different.The both end voltage of Zener diode ZD1 is as detecting voltage V0 output.Select for use with respect to the illumination of 10000Lx by the less phototransistor PTr of electric current at this, when making illumination reach the maximal value that can detect illumination range by Zener diode ZD1 pass through electric current still fully low current detect the Zener voltage that voltage V0 does not reach Zener diode ZD1.
And Zener diode ZD1 has, as the Fig. 8 that represents with logarithm by electric current (longitudinal axis), the electric current that passes through that oppositely passes through is a low current and both end voltage is not reaching the scope of Zener voltage, and is bigger then with respect to the rate of change of the both end voltage by the electric current little characteristic that heals by electric current.That is have, when being low current by electric current, both end voltage is with respect to the characteristic that plays nonlinearities change by electric current.This is called the nonlinear characteristic of Zener diode ZD1 below characteristic.
In the present embodiment, make with respect to illumination rise linear change pass through electric current oppositely passing through in Zener diode ZD1, utilize the nonlinear characteristic of Zener diode ZD1, to realize as the luminance sensor illumination of the using CdS resolution of the little then luminance detection high luminance sensor of healing of healing.
The below work of this luminance sensor of explanation.Apply DC voltage between the series circuit two ends of phototransistor PTr and Zener diode ZD1, then the electric current that passes through by this series circuit plays linear the variation because of phototransistor PTr with respect to illumination.Should then because of the nonlinear characteristic of Zener diode ZD1, produce by electric current bigger between Zener diode ZD1 two ends by electric current in oppositely passing through Zener diode ZD1 with respect to the detection voltage V0 of healing little by the rate of change of electric current.Therefore, detect voltage V0 such as Fig. 9, play nonlinearities change with respect to illumination and make illumination bigger littler with respect to the rate of change of illumination.
In other words, the illumination little luminance detection resolution that heals is higher, event is the illumination range below 100Lx for example, the subtle change of illumination can be exported as the variation that detects voltage V0, the result, the luminance sensor of the use photo-electric conversion element of present embodiment promptly has characteristic near human visual system as the luminance sensor that uses CdS.
And the size that results from the detection voltage V0 between Zener diode ZD1 two ends is also big with Zener diode ZD1 with the big or small identical Zener voltage of passing through electric current.Present embodiment is selected the big voltage person that has in the common Zener diode for use, can export bigger detection voltage V0 without the amplifying circuit 1 (with reference to Fig. 1) of amplification detection voltage V0.
Again, diode generally have with the size pass through electric current by the time, because of environment temperature rising both end voltage towards diminish the skew negative temperature coefficient.Figure 10 is for being the both end voltage of representing the diode that environment temperature is different by electric current with transverse axis, and environment temperature represents with solid line that for " 25 degree " person environment temperature represents with dotted line that for " 25 degree " person environment temperature is that " 100 degree " person is represented by dotted lines.Relatively, use Zener diode ZD1 as present embodiment, the negative temperature coefficient of diode can lower because of the avalanche effect positive temperature coefficient (PTC), can prevent the change of sensitivity that rises with environment temperature.
And the luminance sensor of Fig. 7, adopt the structure of the tie point that connects phototransistor PTr and Zener diode ZD1 with respect to the inverting input of comparator C P1, relatively detecting size that voltage V0 and threshold value voltage V2 detect voltage V0 and threshold value voltage V2, to change the output Vout of comparator C P1 then anti-phase.Other structure and function are identical with embodiment 1.
(embodiment 3)
The luminance sensor of present embodiment, as Figure 11, photo-electric conversion element replaces phototransistor PTr and uses photoelectricity IC2 instead, and inserts brownout resistance R3 between the positive pole of photoelectricity IC2 and direct supply, and these are different with embodiment 2.That is photoelectricity IC2 and Zener diode ZD1 constitute series circuit together with brownout resistance R3.
The structure of photoelectricity IC2 has the photoelectromotive force mechanism photodiode 20 that produces photoelectromotive force with illumination, and the output terminal that possesses the amplifier 21 that amplifies the photoelectromotive force that photodiode 20 produces and amplifier 21 is connected in the electric crystal 22 of its base stage.The collector of electric crystal 22 and emitter respectively replace collector and the emitter of the phototransistor PTr of embodiment 2, respectively are connected in the negative electrode of brownout resistance R3 and Zener diode ZD1.Power to amplifier 21 with direct supply.
With this structure, the border that photodiode 20 produces photoelectromotive force with illumination, 21 functions that base current circulated with respect to electric crystal 22 of amplifier, the result promptly has the electric current that passes through according to the size of spending to pass through between the collector of electric crystal 22 and the emitter.Brownout resistance R3, the size of passing through electric current of restricted passage photoelectricity IC2 and Zener diode ZD1 can prevent when illumination is excessive that excess current is passed through photoelectricity IC2 and Zener diode ZD1 destroys photoelectricity IC2 and Zener diode ZD1.Brownout resistance R3 again flows into the size of the electric current of photoelectricity IC2 for making photoelectricity IC2 work limit, so the also effect of restricted current sinking.Though and Figure 11 does not show,, also can establish the comparator C P1 that relatively detects voltage V0 and threshold value voltage V2 as the luminance sensor of embodiment 2.Other structure and function and embodiment 2 are together.
(embodiment 4)
Present embodiment is in the luminance sensor of the respective embodiments described above, for the series circuit of photo-electric conversion element and the nonlinear element example with the resistance series connection.Because of basic structure is identical with the luminance sensor of the respective embodiments described above, the explanation of relevant duplicate contents is omitted.
The luminance sensor of output with resistance R4 inserted at first explanation between the negative pole of nonlinear element and direct supply.In the luminance sensor of embodiment 1 establish output with resistance R4 person as Figure 12, in the luminance sensor of embodiment 2 establish output with resistance R4 person as Figure 13, replace brownout resistance R3 in the luminance sensor of the embodiment 3 of Figure 14 and change and establish output resistance R4.Possess output with the luminance sensor of resistance R4 with the both end voltage in nonlinear element add output with the voltage of the both end voltage of resistance R4 as detecting voltage V0, adding the resistance value person who exports with resistance R4 with respect to the both end voltage rate of change of the nonlinear element of illumination becomes rate of change with respect to the detection voltage V0 of illumination.That is, all raise with respect to the rate of change of the detection voltage V0 of illumination, the detectable whole illumination ranges of result, the resolution of luminance detection is improved.
Secondly illustrate, restriction is inserted the luminance sensor of the tie point of photo-electric conversion element and nonlinear element as the brownout resistance R3 of the size of passing through electric current of the series circuit that passes through photo-electric conversion element and nonlinear element of enforcement mode 3.Use resistance R3 person as Figure 15 in the luminance sensor of embodiment 1 system of limiting, with resistance R3 such as Figure 16, the luminance sensor that Figure 17 is shown in embodiment 3 hinders R3 with brownout and changes the tie point that is inserted in photoelectricity IC2 and Zener diode ZD1 but not the positive interpolar of photoelectricity IC2 and DC current in the luminance sensor of embodiment 2 system of limiting.The luminance sensor that possesses brownout resistance R3, because of the limited size of passing through electric current by photo-electric conversion element and nonlinear element, can prevent when illumination is excessive that excess current destroys photo-electric conversion element and nonlinear element by photo-electric conversion element and nonlinear element.
At the luminance sensor of the tie point of the photoelectricity IC2 of Figure 17 and the Zener diode ZD1 system of limiting, possesses comparator C P1 as embodiment 2 with resistance R3 again.Comparator C P1, the connection of pulling out line P of variable resistor VR1 is arranged in non-inverting input simultaneously because of the negative electrode that is connected with Zener diode ZD1 in inverting input, detecting voltage V0, to make output Vout during less than threshold value voltage V2 be the H level, and detecting voltage V0, to make output Vout during greater than threshold value voltage V2 be that the L level is worked.
And the luminance sensor of Figure 17, because of the size of passing through electric current in brownout resistance R3 is limited, the size that results from the detection voltage V0 between Zener diode ZD1 two ends is limited, surpass the big illumination that can detect illumination range even luminance sensor detects, detect the maximal value that voltage V0 also is no more than the threshold value voltage V2 that is set by variable resistor VR1.Therefore, when luminance sensor is stopped, only setting the maximal value of threshold value voltage V2 according to variable resistor VR1, can keep the output Vout of comparator C P1 to detect voltage V0 when the H level changes illumination still can be often less than threshold value voltage V2.This function exists, for example possesses human body sensor beyond the luminance sensor, constitute when the little and human body sensor of the illumination of outer light detects human body and make in the device of load operation, useful when only making load operation according to output with the irrelevant human body sensor of luminance sensor.
And in the most luminance sensors shown in the present embodiment, comparator C P1 only is shown in Figure 17, also can establish comparator C P1 in the luminance sensor shown in other figure.
Claims (6)
1. luminance sensor is made of following elements: photo-electric conversion element, have the photoelectromotive force mechanism that produces photoelectromotive force with illumination, and determine one to one with respect to photoelectromotive force by the size of passing through electric current between two ends; And nonlinear element, be a diode, apply DC voltage at the series circuit of this diode and this photo-electric conversion element, this diode connects towards the direction that the electric current forward is passed through, and exports as detection voltage with both end voltage;
Utilization makes to flow through by electric current to has in the nonlinear element by electric current greatlyyer, and the mode that heals the nonlinear characteristic scope little with respect to the rate of change of the detection voltage by electric current then detects voltage and changes with this nonlinear characteristic and make.
2. luminance sensor is made of following elements: photo-electric conversion element, have the photoelectromotive force mechanism that produces photoelectromotive force with illumination, and determine one to one with respect to photoelectromotive force by the size of passing through electric current between two ends; And nonlinear element, be a Zener diode, apply DC voltage at the series circuit of this Zener diode and this photo-electric conversion element, this diode connects towards the direction that current reversal is passed through, and exports as detection voltage with both end voltage;
Utilization makes to flow through by electric current to has in the nonlinear element by electric current greatlyyer, and the mode that heals the nonlinear characteristic scope little with respect to the rate of change of the detection voltage by electric current then detects voltage and changes with this nonlinear characteristic and make.
3. as the luminance sensor of claim 1 or 2, the amplifying circuit of wherein additional use operational amplifier is to amplify this detection voltage.
4. as the luminance sensor of claim 1 or 2, wherein additional output resistance of connect with this photo-electric conversion element and this nonlinear element adds that in the both end voltage of nonlinear element the both end voltage of exporting usefulness resistance is as detection voltage.
5. as the luminance sensor of claim 1 or 2, wherein the tie point in this photo-electric conversion element and this nonlinear element inserts brownout resistance that limits this size of passing through electric current.
6. as the luminance sensor of claim 1 or 2, wherein be connected brownout resistance with an end this nonlinear element opposition side, form series circuit jointly and limit this size by electric current with this brownout resistance and photo-electric conversion element and nonlinear element this photo-electric conversion element.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP048645/2004 | 2004-02-24 | ||
| JP2004048645A JP2005241306A (en) | 2004-02-24 | 2004-02-24 | Brightness sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1661343A true CN1661343A (en) | 2005-08-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100063340A Pending CN1661343A (en) | 2004-02-24 | 2005-01-26 | Brightness sensor |
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| Country | Link |
|---|---|
| JP (1) | JP2005241306A (en) |
| KR (1) | KR100702983B1 (en) |
| CN (1) | CN1661343A (en) |
| TW (1) | TWI243487B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10957129B2 (en) | 2015-12-31 | 2021-03-23 | Ebay Inc. | Action based on repetitions of audio signals |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5144168B2 (en) * | 2007-08-16 | 2013-02-13 | セイコーインスツル株式会社 | Sensor circuit |
| TWI408548B (en) * | 2007-09-12 | 2013-09-11 | Asustek Comp Inc | Quantification indicating circuit |
| US7893829B2 (en) * | 2008-06-12 | 2011-02-22 | S.C. Johnson & Son, Inc. | Device that includes a motion sensing circuit |
| JP5695338B2 (en) * | 2010-04-22 | 2015-04-01 | セイコーインスツル株式会社 | Illuminance sensor |
| JP2014132712A (en) * | 2013-01-07 | 2014-07-17 | Ricoh Co Ltd | Photoelectric conversion apparatus and image generation apparatus |
| JP2020071124A (en) * | 2018-10-31 | 2020-05-07 | オムロン株式会社 | Distance measuring sensor |
-
2004
- 2004-02-24 JP JP2004048645A patent/JP2005241306A/en active Pending
-
2005
- 2005-01-26 CN CN2005100063340A patent/CN1661343A/en active Pending
- 2005-01-27 TW TW094102480A patent/TWI243487B/en active
- 2005-01-31 KR KR1020050008431A patent/KR100702983B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10957129B2 (en) | 2015-12-31 | 2021-03-23 | Ebay Inc. | Action based on repetitions of audio signals |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100702983B1 (en) | 2007-04-05 |
| JP2005241306A (en) | 2005-09-08 |
| TWI243487B (en) | 2005-11-11 |
| KR20060042897A (en) | 2006-05-15 |
| TW200529460A (en) | 2005-09-01 |
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Open date: 20050831 |