CN1659721A - Electrodes for optoelectronic components and the use thereof - Google Patents
Electrodes for optoelectronic components and the use thereof Download PDFInfo
- Publication number
- CN1659721A CN1659721A CN038137879A CN03813787A CN1659721A CN 1659721 A CN1659721 A CN 1659721A CN 038137879 A CN038137879 A CN 038137879A CN 03813787 A CN03813787 A CN 03813787A CN 1659721 A CN1659721 A CN 1659721A
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- CN
- China
- Prior art keywords
- electrode
- nanotube
- isomer
- organic
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
Abstract
The invention relates to electrodes, which comprise spherical allotropes, particularly silicon and/or carbon nanotubes, and to the use thereof in organic semiconductor technology. The electrodes can either exclusively contain allotropes and/or contain allotropes that are embedded in an organic functional polymer.
Description
The present invention relates to comprise spherical allotropism (shape) body, particularly silicon-and/or carbon-nanotube electrode and application in the organic semiconductor technology thereof.
Known PANI, PEDOT:PSS (polystyrolsulfon acid) etc. can be used as the electrode of optoelectronic component for the organic conductor on basis from DE10126859.9.
It is known from DE1015316.0 that nanotube through deriving and spherical allotropism (shape) body and function are made (light) electronic component.
The work functions of the conductivity of this class electrode, light transmission, electronics and/or surface characteristic can also be optimized.
So on the organic substance basis, exist initiative novel and better the demand of electrode be used for so-called " polymer-electronics ", promptly by a branch of the electronics of traditional semiconductor technology as the realization of materials such as silicon, germanium.
Thereby task of the present invention is to provide a kind of electrode novel and that make moderate progress for organic semiconductor device and optoelectronic component on its (light) Electronic Performance.
Object of the present invention comprises and is used for photoelectronic-and/or the electrode of organic-semiconductor element, comprises isomer.
The present invention also for example is combined into a translucent or opaque electrode with organic conductor or semiconductor (being typically conjugated polymer) with isomer.
Electrode can comprise or as the metallic conduction form or as the isomer of semiconductive form.The example of the isomer of metallic conduction is from document (Z.F.Ren, Z.P.Huang, J.W.Xu, D.Z.Wang, J.H.Wang, L.Calvet, J.Chen, J.F.Klemic and M.A.Reed, " Large Arrays of Well-Aligned CarbonNanotubes Proceedings of 13
ThInternational Winter School on ElectronicProperties of Nove Materials, P.263-267 (1999)) in known.
Nanotube has electronics, optics and performance mechanics of a lot of uniquenesses.The hot strength height of single-walled nanotube, become metallic, semiconductive or insulating properties according to its diameter and chirality.In order to utilize these characteristics that nanotube is imposed chemically derived modification in nanometer technology is used is significant.Because it can influence its dissolubility and processability, particularly, can be used as the part phase mixture in the organic functions polymer of microelectric technique through nanotube that derive and/or dissolving.
Spherical isomer such as nanotube have been described silicon and carbon-nanotube for example at Nature1991.vol.354 among the P56-58.
Isomer can or join in the conductive organic material and/or on matrix and draws.Electrode can be realized with the isomer of simple metal or by composite material metallic isomer and/or that contain the semiconductive isomer.
By in advance on the matrix as glass, metal (molybdenum), semiconductor (silicon) or on film (PET), adhere to a kind of suitable catalyst, the isomer that is generated just is being suitable for/negative electrode, selects the composition of two kinds of compositions of following classification just also being suitable for/negative electrode at least:
-conductive matrix (conductive oxide (ITO)),
-semiconductor (silicon, germanium through mixing ...),
-metal species such as aluminium, silver ... or
-at non-conductive matrix (glass, film ...) go up the coating isomer, it or with pure state or to contain conduction or non-conductive jointing material (high polymer ...) form of mixture exists.
The notion of " organic material " or " functional polymer " comprises organically herein, metal is organic and/or all kinds of (mixed complex) plastics of organic and inorganic, especially uses those expressed materials of " plastic " in English.Here relate to except that semiconductor (silicon, germanium) that forms conventional diode and all substances classification the typical metal conductor.Therefore not predetermined those organic materials that are confined on the doctrine meaning as carbonaceous material.And more to consider widely used for example polysiloxanes.This technology does not limit the consideration bulk of molecule in addition, particularly is subjected to high polymer and/or oligomer material institute subordinate, can use " micromolecule " fully yet.The meaning of word composition of " high polymer " has its historical limitation in functional polymer.Thereby just in this point, there is not the implication of actual polymeric compounds.Can think as functional polymer semiconductive, material conduction and/or insulating properties.
The conductive electrode that (generation) metal isomer of growing up on matrix or nanotube provide distinctive three-dimensional structure, the for example upright thereon two-dimensional array that big nano surface pipe is arranged, the surface increases, promptly be covered with the stromal surface and the ratio that can utilize the surface (active surface) of electrode of isomer, can be by the density of plantation, i.e. the density of the isomer of Cheng Changing and/or further improve by its length.
The composite material that is used for electrode can be for example by embedding the preparation of metal isomer at the matrix of being made of the functional polymer of conduction.In the mixture of this isomer and organic functions high polymer, can be optimized the quantity of isomer, its concentration in matrix, the conductivity and/or the transparency of electrode.For example can be used as solution with this composite material and be printed to an electrode.
As the positive electrode (electronics is led) that heterojunction is used, also can particularly adopt the isomer of semiconduction.Showed not long ago that the compound of being made up of nanotube that contains conjugated polymer demonstrated high light electrical effect (S.B.Lee, T.Karayama, H.Aralo AndK.Yoshino, Synth.Met.121 (2001) 1591-1592)
Be used for photoelectronic element, Organic Light Emitting Diode (OLEDS) for example also comprises the optical property of the electrode of organic solar batteries and photodetector making it to adapt by the length that changes isomer.The isomer of suitable length or nanotube, just as the effect of λ/4 antennas, it can absorb electromagnetic radiation.In order to realize absorbing wavelength of visible light scope (400-800nm) with isomer, then adopt isomer with 100-200nm length.
The present invention is further elaborated by example below:
First example is on a metal nano pipe electrode basis, as the Implementation Modes of the present invention of organic solar batteries or organic photoelectric detector.At first with nanotube or be deposited on the matrix of a conduction, perhaps also can select another program, nanotube is grown on a non-conductive matrix, be i.e. " make its growth and form ".For the contact is joined nanotube electrode and a conducting objects (often or select for use translucent high polymer) are carried out laminated (for example passing through the printing operation of solution).The level that comprises of this electrode has like this
-matrix
-selectable conductive layer, for example Au, ITO, Al
-nanotube (on purpose regulating its length, arrangement)
-selectable conducting polymer
Then, on this electrode, deposit organic semiconductor (or the mixture that constitutes by organic p-type and n-N-type semiconductor N), for example by printing operation with solution.Through adding that one is made parts to electrode (typical method is the heat vaporization by a thin metal layer).Can improve the absorptivity of light by the suitable selection of nanotube length and arrangement.
Second case description an a kind of organic solar batteries or the organic photoelectric detector on the basis of the nanotube of a semiconductive.For make the contact join this nanotube or be deposited on one the conduction matrix on; The perhaps scheme that also can select nanotube on a non-conductive matrix, to grow up.For making contacting that a nanotube electrode and a conducting objects (optional translucent high polymer) are carried out laminated (for example using the printing operation of solution).On this electrode (by matrix/(optionally conductive layer, for example Au, ITO, Al ... )/nanotube/(optional conducting polymer) constitutes) deposition organic semiconductor (typical mode is the printing operation of solution).The semiconducting nanotubes of this electrode has the function of n-N-type semiconductor N, produces a photoelectric effect like this between polymer semiconductor and nanotube, by adding one electrode (typical mode is the heat vaporization by thin metal layer) is made parts.Can improve the absorptivity of light by the arrangement of suitable selection nanotube length and nanotube.
The 3rd case description can be at a kind of Organic Light Emitting Diode (or an organic display) on a nanotube electrode (nanotube electrode array) basis, for making join this nanotube or be deposited on the matrix of a conduction of contact; The perhaps scheme that also can select nanotube on a non-conductive matrix, to grow up.For making contacting that a nanotube electrode and a conducting objects (optional translucent high polymer) are carried out laminated (for example through the printing operation with solution).On this electrode (by matrix/(optionally conductive layer, for example Au, ITO, Al ... )/nanotube/(optional conducting polymer) constitutes) deposition organic semiconductor, preferably p-N-type semiconductor N (typical mode is the printing operation of solution).By adding that one is made parts to electrode (typical mode is the heat vaporization by thin metal layer).
At last also will be with organic solar batteries, Organic Light Emitting Diode or organic detector and carbon nanotube electrode compress, and make its contacting.The semiconductor element of this moment is composed as follows:
The first step: the preparation of bottom surface: matrix/electrode 1 (metal)/organic semiconductor
Second step: the nanotube electrode that will grow up to is pressed in the organic semiconductor, carbon nano-tube is penetrated in the organic semiconductor can finish contacting by compressing.This technology is wanted the petty electrode 1 that is used for, and the petty design that is used for translucent nanotube electrode.
The present invention relates to comprise spherical isomer, particularly silicon-and/or carbon-nanotube electrode and application in the organic semiconductor technology thereof.This electrode can include only isomer, also can and/or isomer be embedded in the organic functions high polymer.
Claims (7)
1. be used for the electrode of photoelectronic and/or organic-semiconductor element, comprise isomer.
2. exist with metallic forms or for semi-conductive at electrode isomer by claim 1.
3. in the electrode by one of claim 1 or 2, isomer exists as composite material.
4. the electrode by one of aforesaid right requirement is translucent or transparent.
5. in the electrode by one of aforesaid right requirement, isomer is a nanotube, particularly carbon-nanotube.
6. in electrode,, can on purpose regulate and control the optical property of electrode by adjusting to used allotropism body length by one of aforesaid right requirement.
7. by the electrode of one of claim 1 to 6, the photoelectron that comprises a kind of organic functions high polymer at least-and/or electronics-element in obtain to use.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10226366.3 | 2002-06-13 | ||
DE10226366A DE10226366A1 (en) | 2002-06-13 | 2002-06-13 | Electrodes for optoelectronic components and their use |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1659721A true CN1659721A (en) | 2005-08-24 |
Family
ID=29719034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN038137879A Pending CN1659721A (en) | 2002-06-13 | 2003-06-10 | Electrodes for optoelectronic components and the use thereof |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1512184A2 (en) |
JP (1) | JP2005530350A (en) |
CN (1) | CN1659721A (en) |
DE (1) | DE10226366A1 (en) |
WO (1) | WO2003107451A2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8168965B2 (en) * | 2004-02-20 | 2012-05-01 | University Of Florida Research Foundation, Inc. | Semiconductor device and method using nanotube contacts |
US7943847B2 (en) * | 2005-08-24 | 2011-05-17 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanoscale cometal structures |
JP4720426B2 (en) * | 2005-10-19 | 2011-07-13 | 住友金属鉱山株式会社 | Solar cell using carbon nanotubes |
US20100068461A1 (en) * | 2006-06-30 | 2010-03-18 | University Of Wollongong | Nanostructured composites |
WO2008122027A2 (en) * | 2007-04-02 | 2008-10-09 | Konarka Technologies, Inc. | Novel electrode |
WO2009023778A1 (en) * | 2007-08-14 | 2009-02-19 | William Marsh Rice University | Optical rectification device and method of making same |
US10115972B2 (en) | 2009-04-30 | 2018-10-30 | University Of Florida Research Foundation, Incorporated | Single wall carbon nanotube based air cathodes |
KR101744931B1 (en) | 2010-09-24 | 2017-06-09 | 서울바이오시스 주식회사 | Semiconductor Light Emitting Device and Manufacturing Method Thereof |
JP6138694B2 (en) | 2010-12-17 | 2017-05-31 | ユニバーシティ オブ フロリダ リサーチ ファウンデーション,インク.University Of Florida Reseatch Foundation,Inc. | Method for forming an electrode for an electrochemical cell |
RU2013148843A (en) | 2011-04-04 | 2015-05-10 | Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. | DISPERSING SUBSTANCES FOR NANOTUBES AND FILMS FROM NANOTUBES NOT CONTAINING DISPERSING SUBSTANCES ON THEIR BASIS |
KR20160088346A (en) | 2013-11-20 | 2016-07-25 | 유니버시티 오브 플로리다 리서치 파운데이션, 아이엔씨. | Carbon dioxide reduction over carbon-containing materials |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10240488A1 (en) * | 2001-09-26 | 2003-04-17 | Rennebeck Klaus | Hollow fibers, especially nanotubes or microtubes, used e.g. as a solar cell element have specified outer diameter which varies in the longitudinal direction |
WO2003037791A1 (en) * | 2001-10-29 | 2003-05-08 | Siemens Aktiengesellschaft | Derivatized nanotubes or nano-onions, composites with said compounds, method for production and uses |
WO2003099709A2 (en) * | 2002-05-21 | 2003-12-04 | Eikos, Inc. | Method for patterning carbon nanotube coating and carbon nanotube wiring |
-
2002
- 2002-06-13 DE DE10226366A patent/DE10226366A1/en not_active Ceased
-
2003
- 2003-06-10 CN CN038137879A patent/CN1659721A/en active Pending
- 2003-06-10 EP EP03740075A patent/EP1512184A2/en not_active Withdrawn
- 2003-06-10 WO PCT/DE2003/001914 patent/WO2003107451A2/en active Search and Examination
- 2003-06-10 JP JP2004514157A patent/JP2005530350A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1512184A2 (en) | 2005-03-09 |
JP2005530350A (en) | 2005-10-06 |
WO2003107451A2 (en) | 2003-12-24 |
WO2003107451A3 (en) | 2004-08-05 |
DE10226366A1 (en) | 2004-01-08 |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |