CN1648289A - Chromium-ytterbium-doped gadolinium-gallium garnet self-Q-switched laser crystal and growth method thereof - Google Patents
Chromium-ytterbium-doped gadolinium-gallium garnet self-Q-switched laser crystal and growth method thereof Download PDFInfo
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- CN1648289A CN1648289A CN 200410084641 CN200410084641A CN1648289A CN 1648289 A CN1648289 A CN 1648289A CN 200410084641 CN200410084641 CN 200410084641 CN 200410084641 A CN200410084641 A CN 200410084641A CN 1648289 A CN1648289 A CN 1648289A
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- chromium
- growth
- laser crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 20
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 title abstract description 4
- 239000011651 chromium Substances 0.000 claims abstract description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims description 10
- 239000002223 garnet Substances 0.000 claims description 7
- 238000012856 packing Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 abstract description 11
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract 1
- 229910000423 chromium oxide Inorganic materials 0.000 abstract 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 abstract 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 abstract 1
- 229940075613 gadolinium oxide Drugs 0.000 abstract 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 abstract 1
- 229910001195 gallium oxide Inorganic materials 0.000 abstract 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 abstract 1
- 238000010532 solid phase synthesis reaction Methods 0.000 abstract 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 abstract 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 abstract 1
- 229940075624 ytterbium oxide Drugs 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 5
- 238000009827 uniform distribution Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 206010019280 Heart failures Diseases 0.000 description 1
- 229910017625 MgSiO Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
A chromium-ytterbium-double-doped gadolinium gallium garnet self Q-switched laser crystal and a growth method thereof are disclosed, wherein the structural formula of the crystal is as follows: ca3z/2Yb3yGd3(1－yz/2) Ga5－x CrxO12The method mainly adopts gadolinium oxide, gallium oxide, ytterbium oxide and chromium oxide as raw materials to prepare the raw materials by a solid-phase synthesis method according to the proportion, and adopts a Czochralski method to grow the self-Q-switching laser crystal under the condition of 98 percent of nitrogen and 2 percent of oxygen. The chromium and ytterbium double-doped gadolinium-gallium garnet self-Q-switched laser crystal prepared by the method has the characteristics of large size and high quality, and the ion concentration difference is less than 1% in a plane vertical to the growth direction of the crystal.
Description
Technical field
The present invention relates to crystalline growth, particularly a kind ofly mix two chromium Yb-Gd-Ga garnet (Cr that mix
4+, Yb
3+: Gd
3Ga
5O
12, hereinafter to be referred as: Cr, Yb:GGG) laser crystals and growth method thereof.
Background technology
The passive Q-regulaitng laser of diode pumping is to produce the LASER Light Source that has high-peak power and high-repetition-rate pulse in nanosecond and the subnanosecond scope.It has compact construction, economy, full solidified characteristics, can be widely used in aspects such as radar, range finding, remote viewing, the processing of non-linear optical and materials processing.Passive Q-adjusted solid statelaser normally by organic dye and inorganic colour centre crystal as saturable absorber.But, the poor heat stability of dyestuff, damage threshold is low, aging easily, but also needs the complicated cooling system of a cover; Colour centre crystal has low colour center concentration and the Chang Youse heart failure moves back phenomenon.These have all limited their application.Recent findings mix Cr
4+YAG, GSGG, MgSiO
4Deng near the Nd of crystal emission wavelength is 1060nm
3+Have the saturated absorption characteristic in the laser apparatus, can make from Q-switch Cr
4+, Yb
3+: YAG has proved the good self-regulated Q of a kind of performance laserable material.But because the YAG crystal is protruding interface growth in process of growth, the dopant ion skewness relatively is difficult to grow high quality large size (diameter is greater than 5cm) crystal.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the defective of above-mentioned prior art, and a kind of two mix chromium Yb-Gd-Ga garnet self Q switching laser crystal and growth method thereof are provided, and dopant ion is even to obtain, the crystal of large-size high-quality.
Technical solution of the present invention:
Mix chromium Yb-Gd-Ga garnet self Q switching laser crystal, it is characterized in that this crystalline structural formula is: Ca for a kind of pair
3z/2Yb
3yGd
3 (1-y-z/2)Ga
5-xCr
xO
12
Described two growth method of mixing chromium Yb-Gd-Ga garnet self Q switching laser crystal comprises the following steps:
1, by mole proportioning weighing following raw materials according:
Gd
2O
3：3(1-y-z/2)
Ga
2O
3：5.1-x
Yb
2O
3：3y
Cr
2O
3：x
CaO： 3z/2
The variation range of x: 0.01%≤X≤0.5% wherein, the variation range of y: 1-18%, z/x=2.0-3.0.;
2, with above-mentioned raw materials behind thorough mixing, use the hydropress briquetting, burnt 6 hours down at 1000-1600 ℃;
3, the growing single-crystal stove of packing into vacuumizes, and charges into 98% nitrogen+2% oxygen, begins growth then:
Pull rate: 2-5mm/h
Speed of rotation: 10-20rpm;
4, crystal growth finishes, and adopts the method for in-situ annealing slowly to reduce to room temperature taking-up crystal.
Advantage of the present invention: two Yb that mix in the gadolinium gallium garnet crystal
3+Ion and Cr
4+Ion, their character well can be combined. because Cr, it in the Yb:GGG crystal growing process plane interface growth, in plane perpendicular to crystal growth direction, so the ionic concn difference is more even than other crystal (as YAG) less than 1% ion doping, and can grow the high-quality crystal of large size (diameter is greater than 10cm).
Embodiment
Embodiment 1:
With above-mentioned proportioning raw materials and technical process growth Cr, the Yb:GGG crystal is got x=0.05% in the proportioning raw materials, Y=10%, Z=2x.At first with Gd
2O
3, Ga
2O
3, Yb
2O
3And Cr
2O
3Weigh by said ratio, after mechanically mixing was even, with 1000 ℃ of sintering, the growing single-crystal stove of packing into vacuumized in retort furnace, charges into 98% nitrogen+2% oxygen. pull rate: 2mm/h speed of rotation: 15rpm.Behind the growing crystal, slowly reduce to room temperature, take out crystal, through check Yb ion, Cr ionic concn uniform distribution (in the plane perpendicular to crystal growth direction, the ionic concn difference is less than 1%), the crystalline optical property is fine.
Embodiment 2:
With above-mentioned proportioning raw materials and technical process growth Cr, the Yb:GGG crystal is got x=0.1% in the proportioning raw materials, Y=4%, z=3x.At first with Gd
2O
3, Ga
2O
3, Yb
2O
3And Cr
2O
3Weigh by said ratio, after mechanically mixing was even, with 1600 ℃ of sintering, the growing single-crystal stove of packing into vacuumized in retort furnace, charges into 98% nitrogen+2% oxygen. pull rate: 2.5mm/h speed of rotation: 14rpm.Behind the growing crystal, slowly reduce to room temperature, take out crystal, through check Yb ion and Cr ionic concn uniform distribution, the crystalline optical property is fine
Embodiment 3:
With above-mentioned proportioning raw materials and technical process growth Cr, the Yb:GGG crystal is got x=0.2% in the proportioning raw materials, Y=10%,=2.5x.At first with Gd
2O
3, Ga
2O
3, Yb
2O
3And Cr
2O
3Weigh by said ratio, after mechanically mixing was even, with 1200 ℃ of sintering, the growing single-crystal stove of packing into vacuumized in retort furnace, charges into 98% nitrogen+2% oxygen. pull rate: 3mm/h speed of rotation: 16rpm.Behind the growing crystal, slowly reduce to room temperature, take out crystal, through check Yb ion, Cr ionic concn uniform distribution, the crystalline optical property is fine.
Embodiment 4:
With above-mentioned proportioning raw materials and technical process growth Cr, the Yb:GGG crystal is got x=0.5% in the proportioning raw materials, Y=12%, z=2.1x.At first with Gd
2O
3, Ga
2O
3, Yb
2O
3And Cr
2O
3Weigh by said ratio, after mechanically mixing was even, with 1250 ℃ of sintering, the growing single-crystal stove of packing into vacuumized in retort furnace, charges into 98% nitrogen+2% oxygen. pull rate: 2.5mm/h speed of rotation: 10rpm.Behind the growing crystal, slowly reduce to room temperature, take out crystal, through check Yb ion, Cr ionic concn uniform distribution, the crystalline optical property is fine.
Embodiment 5:
With above-mentioned proportioning raw materials and technical process growth Cr, the Yb:GGG crystal is got x=0.4% in the proportioning raw materials, Y=5%, z=2.3x.At first with Gd
2O
3, Ga
2O
3, Yb
2O
3And Cr
2O
3Weigh by said ratio, after mechanically mixing was even, with 1300 ℃ of sintering, the growing single-crystal stove of packing into vacuumized in retort furnace, charges into 98% nitrogen+2% oxygen. pull rate: 2.5mm/h speed of rotation: 16rpm.Behind the growing crystal, slowly reduce to room temperature, take out crystal, through check Yb ion, Cr ionic concn uniform distribution, the crystalline optical property is fine.
Claims (2)
1, mixes chromium Yb-Gd-Ga garnet self Q switching laser crystal for a kind of pair, it is characterized in that this crystalline structural formula is: Ca
3z/2Yb
3yGd
3 (1-y-z/2)Ga
5-xCr
xO
12
2, two growth methods of mixing chromium Yb-Gd-Ga garnet self Q switching laser crystal of claim 1 is characterized in that comprising the following steps:
1) by mole proportioning weighing following raw materials according:
Gd
2O
3∶3(1-y-z/2)
Ga
2O
3∶5.1-x
Yb
2O
3∶3y
Cr
2O
3∶x
CaO∶3z/2
The variation range of x: 0.01%≤X≤0.5% wherein, the variation range of y: 1-18%, z/x=2.0-3.0.;
2) with above-mentioned raw materials behind thorough mixing, use the hydropress briquetting, burnt 6 hours down at 1000-1600 ℃;
3) the growing single-crystal stove of packing into vacuumizes, and charges into 98% nitrogen+2% oxygen, begins growth then:
Pull rate: 2-5mm/h
Speed of rotation: 10-20rpm
4) crystal growth finishes, and adopts the method for in-situ annealing slowly to reduce to room temperature taking-up crystal
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100846416A CN1322179C (en) | 2004-11-26 | 2004-11-26 | Chromium-ytterbium-doped gadolinium-gallium garnet self-Q-switched laser crystal and growth method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100846416A CN1322179C (en) | 2004-11-26 | 2004-11-26 | Chromium-ytterbium-doped gadolinium-gallium garnet self-Q-switched laser crystal and growth method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1648289A true CN1648289A (en) | 2005-08-03 |
| CN1322179C CN1322179C (en) | 2007-06-20 |
Family
ID=34869242
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100846416A Expired - Fee Related CN1322179C (en) | 2004-11-26 | 2004-11-26 | Chromium-ytterbium-doped gadolinium-gallium garnet self-Q-switched laser crystal and growth method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545027A (en) * | 2012-02-10 | 2012-07-04 | 厦门大学 | Yb: YAG (yttrium aluminum garnet) and Cr, Yb: YAG self-Q-switching laser |
| CN103872572A (en) * | 2014-03-13 | 2014-06-18 | 中国科学院福建物质结构研究所 | Self-Q-switched cross-polarized dual-wavelength pulse laser |
| CN104711677A (en) * | 2015-02-13 | 2015-06-17 | 山东大学 | Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483734A (en) * | 1981-02-09 | 1984-11-20 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of single crystals of gadolinium gallium garnet |
| JPH08283093A (en) * | 1995-04-10 | 1996-10-29 | Nippon Telegr & Teleph Corp <Ntt> | Production of laser material |
-
2004
- 2004-11-26 CN CNB2004100846416A patent/CN1322179C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545027A (en) * | 2012-02-10 | 2012-07-04 | 厦门大学 | Yb: YAG (yttrium aluminum garnet) and Cr, Yb: YAG self-Q-switching laser |
| CN102545027B (en) * | 2012-02-10 | 2013-08-21 | 厦门大学 | Yb: YAG (yttrium aluminum garnet) and Cr, Yb: YAG self-Q-switching laser |
| CN103872572A (en) * | 2014-03-13 | 2014-06-18 | 中国科学院福建物质结构研究所 | Self-Q-switched cross-polarized dual-wavelength pulse laser |
| CN103872572B (en) * | 2014-03-13 | 2019-03-08 | 中国科学院福建物质结构研究所 | A kind of self Q switch, cross-polarization double-wavelength pulse laser |
| CN104711677A (en) * | 2015-02-13 | 2015-06-17 | 山东大学 | Self Q-adjusting garnet crystal, self Q-adjusting device made of self Q-adjusting garnet crystal and self Q-adjusting pulsed laser made of self Q-adjusting garnet crystal |
| CN104711677B (en) * | 2015-02-13 | 2017-08-29 | 山东大学 | A kind of garnet crystal of self Q switch and its self Q switch device of making, self Q switch pulse laser |
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| Publication number | Publication date |
|---|---|
| CN1322179C (en) | 2007-06-20 |
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Granted publication date: 20070620 Termination date: 20101126 |