CN1645229A - Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof - Google Patents
Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof Download PDFInfo
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Abstract
A preparing method includes disposing scan and data wiring on base plate for defining out a picture element region, disposing film transistor (FT) in the picture element region (PER) and connecting it to scan and data wiring, disposing picture element electrode (PEE) in PER corresponding to FT as PEE connected with FT and PEE having a reflection region and penetrating region, covering organic material (OM) on FT and PEE as multiple refractive patterns set on OM layer above penetrating region of PEE.
Description
Technical field
The present invention relates to a kind of display panels and dot structure thereof and manufacture method, particularly, relate to a kind of semi-penetrating and semi-reflective liquid crystal display panel and dot structure thereof and manufacture method.
Background technology
Along with the development rapidly of information industry in recent years, the application of display technique is especially aspect portable information product, towards miniaturization, lightening, high brightness, low-energy-consumption and have high-quality directions such as full-color image output and stride forward.
For satisfying the demand of above-mentioned portable information product, prior art has proposed a kind of reflection type liquid crystal technique for displaying, this technology will have the pixel electrode of the conductive material of reflection ray characteristic as reflecting type liquid crystal display panel, to be incident to the light reflection of pixel from the external world, to show required light source as picture.This reflection type liquid crystal display technique not only is regarded as one of technology that has in recent years development potentiality, and has been applied in the product of part industrialization.Yet adopt the display device of this reflection type liquid crystal display technique, when under well-lighted environment, using, though can demonstrate distinct image, but when extraneous light is inadequate, because external light source is incident to the light quantity not sufficient of the display panels of display device, so the image output quality just can't be kept the level when bright and clear.In other words, present existing reflection type liquid crystal display technique still can't solve the problem that the field of employment is subject to the bright degree of external environment effectively.
In view of this, prior art more proposes a kind of lcd technology.This technology is integrated reflection type liquid crystal display technique and penetration lcd technology, wherein the penetration lcd technology is with the pixel electrode of a transparent conductive material as pixel, indium tin oxide (indium tin oxide for example, and utilize a backlight that light penetration is crossed this transparent pixels electrode to show required light source ITO), so that picture to be provided.Each pixel electrode of display panels all is made of jointly a reflective conductive film and a transparent conductive film in this lcd technology.Utilize the display device of this lcd technology made, can be under the well-lighted situation in the external world, the pattern of utilizing reflection type liquid crystal to show reaches the preferable image output effect.In addition, this display device can also be under the insufficient situation of extraneous light, by means of assisting of the backlight module that is disposed at the transparent conducting thin film rear, utilize reflection type liquid crystal to show the effect that reaches good image output with the pattern of penetration liquid crystal display simultaneously.Yet for this kind lcd technology, the light reflectivity of pixel is directly proportional with the area of reflective conductive film.If desire increases the light reflectivity of pixel reflects part, then the area of reflective conductive film just must relatively increase, and thus, will threaten the aperture opening ratio of pixel penetrating component again.In case when the aperture opening ratio of pixel penetrating component is not enough,, just must increase the brightness of backlight, thereby cause the consume of the energy in order to keep the quality of image output.
Summary of the invention
One of purpose of the present invention is providing a kind of semi-penetration, semi-reflective (transflective) dot structure and manufacture method thereof with high light reflectivity rate and high brightness exactly.
Another object of the present invention is exactly that a kind of semi-penetrating and semi-reflective liquid crystal display panel with high brightness and low power consumption is being provided.
The present invention proposes a kind of transflective pixel structure, and it comprises one scan distribution, a data wiring, a thin film transistor (TFT), a pixel electrode and an organic material layer.Scan wiring and data wiring are disposed on the substrate, in order to define a pixel region.Thin film transistor (TFT) is configured in this pixel region inside and electrically connects with scan wiring and data wiring.Pixel electrode is disposed in the pixel region and the configuration of corresponding thin film transistor (TFT), and wherein pixel electrode and thin film transistor (TFT) electrically connect, and pixel electrode has an echo area and a penetrating region.Organic material layer is covered on thin film transistor (TFT) and the pixel electrode, and the upper surface of the organic material layer of the wherein corresponding penetrating region top that is configured in pixel electrode has a plurality of refractive pattern.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein the thickness of organic material layer is for example between 500 dust to 30000 dusts.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein this refractive pattern is selected from recess patterns, outstanding pattern or it makes up one of them.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein recess patterns for example comprises a plurality of round holes, and the diameter in circle hole is for example between 2～10 microns.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein for example also comprise a refraction material layers, the upper surface of the conformal organic material layer that covers this penetrating region top, this moment organic material layer thickness for example between 20000 dust to 25000 dusts, and the material of refraction material layers for example comprises silicon metal.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein for example also comprise a plurality of raised designs (bump), be configured in accordingly under the echo area of pixel electrode, and the echo area of pixel electrode for example is a metal material.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein the penetrating region of pixel electrode for example is the transparent metal oxide material.
The present invention proposes a kind of semi-penetrating and semi-reflective liquid crystal display panel, and it comprises one first substrate, one second substrate and a liquid crystal layer.At least comprise on second substrate and dispose an electrode film, and liquid crystal layer is configured between first substrate and second substrate.First substrate includes plurality of scanning wirings, many data wirings, a plurality of thin film transistor (TFT), a plurality of pixel electrode and organic material layers.These scan wirings and data wiring are in order to define a plurality of pixel regions.These thin film transistor (TFT)s are configured in respectively in each pixel region, and corresponding scan wiring and data wiring electrically connects in each thin film transistor (TFT) and these scan wirings and the data wiring.Pixel electrode is disposed at respectively in each pixel region and corresponding to each thin film transistor (TFT) and disposes, wherein corresponding film transistor electrically connects in each pixel electrode and these thin film transistor (TFT)s, and each pixel electrode all has an echo area and a penetrating region.
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein the thickness of organic material layer is for example between 500 dust to 30000 dusts, and the refractive pattern that is formed at organic material layer upper surface to be selected from recess patterns, projection pattern and combination thereof wherein a kind of.。
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein a plurality of recess patterns for example comprise a plurality of round holes, and the diameter in circle hole is for example between 2～10 microns
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein for example more comprise a refraction material layers, the upper surface of the conformal organic material layer that covers this penetrating region top, this moment organic material layer thickness for example between 20000 dust to 25000 dusts, and the material of refraction material layers for example comprises silicon metal.
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein for example also comprise a plurality of raised designs (bump), be configured in accordingly under the echo area of pixel electrode, and the echo area of pixel electrode for example is a metal material.
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein the penetrating region of pixel electrode for example is the transparent metal oxide material.
According to the described semi-penetrating and semi-reflective liquid crystal display panel of preferred embodiment of the present invention, wherein for example comprise at least on second substrate and dispose a chromatic filter layer.
The present invention proposes a kind of one pixel structure process method, and the method forms earlier an one scan distribution and a grid on a substrate, forms a gate insulation layer afterwards on this substrate, with cover scan wiring with grid.Then, on the gate insulation layer above the grid, form a channel layer, follow and on channel layer, form an one source pole and a drain electrode, and form simultaneously and one of source electrode electric connection data wiring.Continue it, form a pixel electrode above substrate, this pixel electrode electrically connects with drain electrode, and pixel electrode has an echo area and a penetrating region.Subsequently, above substrate, form an organic material layer, in order to cover pixel electrode and thin film transistor (TFT).At last, the upper surface at the organic material layer at corresponding this penetrating region place forms a plurality of refractive pattern.
According to the described transflective pixel structure of preferred embodiment of the present invention, wherein this refractive pattern is selected from recess patterns, outstanding pattern or it makes up one of them.
According to the described one pixel structure process method of preferred embodiment of the present invention, wherein after the upper surface of organic material layer forms a plurality of refractive pattern, the upper surface that for example also is included in corresponding to the organic material layer at penetrating region place forms a conformal refraction material layers.
According to the described one pixel structure process method of preferred embodiment of the present invention, wherein the method that forms a plurality of refractive pattern at the upper surface of organic material layer comprises the little shadow process of carrying out.
The present invention is because form the organic material layer that is covered with pixel electrode and thin film transistor (TFT) above substrate, and the upper surface at the organic material layer at corresponding penetrating region place forms a plurality of refractive pattern, therefore the present invention can allow script be radiated at penetrating region and can't be the extraneous light that the echo area utilizes, by means of these refractive pattern with light refraction and enter into the echo area, in order to improve the light reflectivity of echo area.In addition, the present invention can also be conformally formed a refraction material layers on organic material layer, in order to strengthen the ray refraction effect.And, therefore can promote the brightness that picture shows because display panels of the present invention adopts above-mentioned refractive pattern to design thereby can promote the effect of the light reflectivity of echo area.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperation institute accompanying drawing are described in detail below.
Description of drawings
Figure 1A ~ 1F has shown the diagrammatic cross-section according to the manufacturing process of the transflective pixel structure of first embodiment of the invention;
Fig. 2 has shown the schematic top plan view according to the transflective pixel structure of first embodiment of the invention;
Fig. 3 A ~ Fig. 3 D has shown the diagrammatic cross-section according to the manufacturing process of the dot structure of second embodiment of the invention;
Fig. 4 has shown the semi-penetrating and semi-reflective liquid crystal display panel synoptic diagram according to third embodiment of the invention; And
Fig. 5 has shown the first substrate schematic top plan view according to Fig. 4.
The primary clustering symbol description
10: light 12: light
100: transflective pixel structure
100 ': transflective pixel structure
110: substrate
120: grid
130: gate insulation layer
140: channel layer
142: ohmic contact layer
150: data wiring
160: protective seam
162: opening
170: pixel electrode
170a: echo area
170b: penetrating region
172: pixel region
180: organic material layer
182: refractive pattern
184: the refraction material layers
190: scan wiring
200: thin film transistor (TFT)
300: the first substrates
400: the second substrates
410: electrode film
420: chromatic filter layer
450: the glue frame
500: liquid crystal layer
S: source electrode
D: drain electrode
Embodiment
First embodiment
1A ~ 1F has shown the manufacturing process section according to the transflective pixel structure of first embodiment of the invention.Fig. 2 has shown the schematic top plan view according to the transflective pixel structure of first embodiment of the invention.Please jointly with reference to Figure 1A and Fig. 2, at first on a substrate 110, form an one scan distribution 190 and a grid 120, wherein the material of substrate 110 for example is glass substrate, plastic base or other material, and scan wiring for example is chromium (Cr), tantalum (Ta) or other metal material with the material with grid 120.Form afterwards a gate insulation layer 130 be covered in scan wiring 190 with gate pole 120 on.Wherein, the material of gate insulation layer 130 for example is monox, silicon nitride or other dielectric material.Then form a channel layer 140 and be covered on the gate insulation layer 130, wherein the material of channel layer 140 for example is amorphous silicon (amorphoussilicon).In addition, present embodiment for example more can form an ohmic contact layer 142 and be covered on the channel layer 140, and wherein the material of ohmic contact layer 142 for example is the amorphous silicon (n-type doped amorphous silicon) of n type doping.
Please refer to Figure 1B, above channel layer 140, form source S, drain D and a data wiring 150 respectively, and data wiring 150 electrically connects with source S.Wherein, source S, drain D and a data wiring 150 employed materials for example are chromium (Cr), tantalum (Ta) or other metal material.Wherein after defining source S and drain D, also comprise and utilize source S and drain D for making etch mask, remove (being commonly called as the channel back etched, backchannel etching) with the ohmic contact layer 142 that will be not be covered, promptly finish the making of a thin film transistor (TFT) 200 by source S and drain D cover.
Please refer to Fig. 1 C, after forming thin film transistor (TFT) 200, on substrate 110, form a protective seam 160.Afterwards, for example also be included in and form an opening 162 in the protective seam 160, to expose drain D.
Please refer to Fig. 1 D, on protective seam 160, form a pixel electrode 170, and pixel electrode 170 electrically connects with drain D.In the present embodiment, pixel electrode 170 for example electrically connects with drain D by means of opening 162.In addition, pixel electrode 170 can be divided into echo area 170a and two parts of penetrating region 170b, the material of echo area 170a for example can have the metal material of reflectivity properties for aluminium (Al) or other, and the material of penetrating region 170b for example can for indium tin oxide or indium-zinc oxide (indium zincoxide, IZO).In the embodiment of Fig. 2, be with penetrating region 170b be design in the centre of pixel region 172 and echo area 170a be design be that example illustrates around penetrating region 170b, but be not in order to qualification the present invention.In the present invention, can arrange in pairs or groups each other with any arrangement mode between the echo area 170a of pixel electrode 170 and the penetrating region 170b.
Please refer to Fig. 1 E, be covered on pixel electrode 170 and the thin film transistor (TFT) 200 in forming an organic material layer 180 on the substrate 110, wherein the material of organic material layer 180 for example can be a photoresist, and its thickness is for example approximately between 500 dusts ~ 30000 dusts.The mode that organic material layer 180 forms for example earlier reconciles into a solution with photoresist with solvent, for example utilize solution coat that the mode of rotary coating (spin coating) will be mixed with photoresist afterwards on pixel electrode 170 and thin film transistor (TFT) 200, then utilize the program of baking solvent removal.Organic material layer 180 is covered on pixel electrode 170 and the thin film transistor (TFT) 200.Afterwards, for example utilize little shadow process and,,, finish a transflective pixel structure 100 at last with respect to a plurality of refractive pattern 182 of penetrating region 170b top place's formation in the upper surface of organic material layer 180 by means of adjusting exposure intensity.The geometric configuration of refractive pattern 182 is selected from recess patterns, outstanding pattern and makes up one of them, and in a preferred embodiment, refractive pattern 182 for example is circle hole or similar pattern, and the diameter in circle hole for example is between 2～10 microns.In another preferred embodiment, please refer to Fig. 1 F, after refractive pattern 182 forms, can also on the organic material layer 180 of corresponding penetrating region 170b, be conformally formed a refraction material layers 184, its material for example is silicon metal (crystallized silicon).If also be formed with refraction material layers 184 on organic material layer 180, then the thickness of organic material layer 180 is preferably between 20000 dusts ~ 25000 dusts.
Please jointly with reference to Fig. 1 E and Fig. 2, comprise one scan distribution 190, a data wiring 150, a thin film transistor (TFT) 200, a pixel electrode 170 and an organic material layer 180 according to the transflective pixel structure 100 of above-mentioned processing procedure manufacturing.Scan wiring 190 is disposed on the substrate 110 with data wiring 150, to define pixel region 172.Thin film transistor (TFT) 200 is disposed in the pixel region 172 and with scan wiring 190 and data wiring 150 and electrically connects.Pixel electrode 170 is disposed in the pixel region 172 corresponding to thin film transistor (TFT) 200, and itself and thin film transistor (TFT) 200 electrically connects.This pixel electrode 170 also has an echo area 170a and a penetrating region 170b.Organic material layer 180 is covered on thin film transistor (TFT) 200 and the pixel electrode 170, and it has a plurality of refractive pattern 182 corresponding to the zone above the penetrating region 170b.
Please continue with reference to Fig. 1 E figure and Fig. 2, when extraneous light 10 is incident to the echo area 170a of pixel electrode 170 through organic material layers 180, required light source when light 10 becomes picture and shows via the reflection of echo area 170a.One of when extraneous light 12 was incident to refractive pattern 182 on the organic material layer 180, light 12 will be refracted to echo area 170a, and the light source source when becoming picture via reflection and showing.In addition, in another preferred embodiment, can also be shown in Fig. 1 F, a refractive material layer 184 conformally is covered in the surface of the organic material layer 180 of penetrating region 170b top, in order to increase the effect of light refraction to echo area 170a.
Based on above-mentioned, the transflective pixel structure of present embodiment can be merely by means of the refractive pattern on the organic material layer or add the design that the refractive material layer is covered in the organic material laminar surface of penetrating region top, the penetrating region top will be originally exposed to and light can't be utilized as light source, such as light 12, refract on the echo area and become the light source that picture shows, therefore can increase the light reflectivity of pixel electrode, and then increase the brightness of semi-penetration, semi-reflective pixel.
Second embodiment
Fig. 3 A ~ Fig. 3 D has shown the manufacturing process diagrammatic cross-section according to the dot structure of second embodiment of the invention.Because the processing procedure of present embodiment is similar to first embodiment, so the label of present embodiment is continued to use the label of first embodiment.Please refer to Fig. 3 A; at first carry out among first embodiment Figure 1A to the described processing procedure of Figure 1B; and after forming protective seam 160 on the substrate 110; preboarding becomes the place, echo area of pixel electrode to form a plurality of raised designs 164 (bump) on protective seam 160, and its material for example is organic resin (organicresin) or other organic material (organic material).Wherein, the method that forms raised design 164 for example is earlier organic material to be formed at above-mentioned formed structure, utilizes little shadow process patterning again and forms.
Please refer to Fig. 3 B, on protective seam 160, form a pixel electrode 170 and cover raised design 164, and pixel electrode 170 electrically connects with drain D.Wherein, pixel electrode 170 can be divided into echo area 170a and two parts of penetrating region 170b, and the echo area 170a of pixel electrode 170 is formed in the zone that correspondence is formed with raised design 164.
Please refer to Fig. 3 C, be covered on pixel electrode 170 and the thin film transistor (TFT) 200 in forming an organic material layer 180 on the substrate 110, wherein the material of organic material layer 180 and generation type and first embodiment are same or similar.After being covered in organic material layer 180 on pixel electrode 170 and the thin film transistor (TFT) 200, upper surface in organic material layer 180 forms a plurality of refractive pattern 182 corresponding to place, penetrating region 170b top again, and forms a transflective pixel structure 100 '.In another preferred embodiment, please refer to Fig. 3 D, after refractive pattern 182 forms, more can on organic material layer 180, be conformally formed a refraction material layers 184 corresponding to penetrating region 170b top, its material for example is a silicon metal.
Based on above-mentioned, because the design of the raised design 164 of present embodiment, so 170a surface in echo area is one to have the surface of height fluctuating.Thus, just can increase the light reflecting effect of echo area 170a, and then promote the light reflectivity of echo area 170a.
Fig. 4 has shown the synoptic diagram according to the display panels with above-mentioned transflective pixel structure of a preferred embodiment of the present invention.Please refer to Fig. 4, semi-penetrating and semi-reflective liquid crystal display panel 600 comprises one first substrate 300, one second substrate 400 and a liquid crystal layer 500.Second substrate 400 includes an electrode film 410 at least, and liquid crystal layer 500 then is sealed between first substrate 300 and second substrate 400 by means of a glue frame 450.
Fig. 5 has shown the schematic top plan view of first substrate 300 of Fig. 4.Owing to the manufacture process of first substrate 300 forms with the processing procedure that first embodiment or second embodiment are narrated, therefore continue to use first embodiment or the employed label of second embodiment at this employed label.Please refer to Fig. 5, have a plurality of dot structures on first substrate 300, and each dot structure is shown in Fig. 1 E or Fig. 1 F (first embodiment), or shown in Fig. 3 C or 3D (second embodiment).In addition, except disposing electrode film 410, for example can also comprise a chromatic filter layer 420 on second substrate 400.
Based on above-mentioned, each dot structure of the semi-penetrating and semi-reflective liquid crystal display panel that the present invention manufactures all has the characteristic of first embodiment or the described transflective pixel structure of second embodiment, promptly utilize the refractive pattern on the organic material layer or add the light reflectivity of refraction material layers, so the semi-penetrating and semi-reflective liquid crystal display panel of present embodiment has the advantage of high brightness and low power consumption with the increase reflector space.
In sum, at penetration, semi-reflective pixel structure of the present invention owing on its processing procedure, increased the organic material layer that one deck has refractive pattern, therefore can be by means of the refractive pattern on the organic material layer or the design of refractive pattern and refractive material layer, script is exposed to penetrating region and can't be utilized light, refract on the echo area.Therefore can increase the light reflectivity of catoptrical intensity and increase pixel electrode.In addition, more can dispose a plurality of projection pattern in the below of the reflector space of pixel electrode to increase the light reflectivity of transflective pixel structure.If be applied in the semi-penetrating and semi-reflective liquid crystal display panel with this technology, then this display panel also can have the characteristic of high brightness and low power consumption.
Though the present invention with preferred embodiment openly as above; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the invention; when can doing many changes and modification, so protection scope of the present invention defines and is as the criterion when looking appended claim.
Claims (24)
1, a kind of transflective pixel structure comprises:
An one scan distribution and a data wiring are disposed on the substrate, to define a pixel region;
One thin film transistor (TFT) is configured in this pixel region, and this thin film transistor (TFT) and this scan wiring and the electric connection of this data wiring;
One pixel electrode is disposed in this pixel region and to disposing by thin film transistor (TFT), wherein this pixel electrode and this thin film transistor (TFT) electrically connect, and this pixel electrode has an echo area and a penetrating region; And
One organic material layer covers this thin film transistor (TFT) and this pixel electrode, and the upper surface of this organic material layer of wherein corresponding this penetrating region top that is configured in this pixel electrode is formed with a plurality of refractive pattern.
2, transflective pixel structure as claimed in claim, wherein, the thickness of this organic material layer is between 500 dust to 30000 dusts.
3, transflective pixel structure as claimed in claim 1, wherein, this refractive pattern is selected from recess patterns, outstanding pattern and makes up one of them.
4, transflective pixel structure as claimed in claim 3, wherein, the described a plurality of recess patterns that are formed on the upper surface of this organic material layer comprise a plurality of round holes.
5, transflective pixel structure as claimed in claim 4, wherein, the diameter in described a plurality of round holes is between 2～10 microns.
6, transflective pixel structure as claimed in claim 1 also comprises a refraction material layers, conformally covers the upper surface of this organic material layer of this penetrating region top.
7, transflective pixel structure as claimed in claim 6, wherein, the thickness of this organic material layer is between 20000 dust to 25000 dusts.
8, transflective pixel structure as claimed in claim 6, wherein, the material of this refraction material layers comprises silicon metal.
9, transflective pixel structure as claimed in claim 1 also comprises a plurality of raised designs, is configured under this echo area of this pixel electrode.
10, transflective pixel structure as claimed in claim 1, wherein, this echo area of this pixel electrode is a metal material.
11, transflective pixel structure as claimed in claim 1, wherein, this penetrating region of this pixel electrode is the transparent metal oxide material.
12, a kind of semi-penetrating and semi-reflective liquid crystal display panel comprises:
One first substrate comprises at least on this first substrate and disposing:
Plurality of scanning wirings and most bar data wiring are to define a plurality of pixel regions;
A plurality of thin film transistor (TFT)s are configured in respectively in each described a plurality of pixel region, and each described a plurality of thin film transistor (TFT) and corresponding wherein described a plurality of scan a distribution and wherein described a plurality of data wirings electric connections;
A plurality of pixel electrodes, be disposed in each described a plurality of pixel region respectively and corresponding described a plurality of thin film transistor (TFT) configurations, wherein each described a plurality of pixel electrode and corresponding wherein described a plurality of thin film transistor (TFT)s electrically connect, and each described a plurality of pixel electrode has an echo area and a penetrating region;
One organic material layer covers described a plurality of thin film transistor (TFT) and described a plurality of pixel electrode, and the upper surface of this organic material layer of wherein corresponding this penetrating region top that is configured in described a plurality of pixel electrodes is formed with a plurality of refractive pattern;
One second substrate comprises at least on this second substrate and disposes an electrode film; And
One liquid crystal layer is configured between this first substrate and this second substrate.
13, transflective pixel structure as claimed in claim 12, wherein, this refractive pattern is selected from recess patterns, outstanding pattern and makes up one of them.
14, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 12, wherein, the thickness of this organic material layer is between 500 dust to 30000 dusts.
15, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 13, wherein, the described a plurality of recess patterns that are formed on this organic material layer upper surface comprise a plurality of round holes.
16, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 15, wherein, the diameter in described a plurality of round holes is between 2～10 microns.
17, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 12 also comprises a refraction material layers, conformally covers this organic material laminar surface of this penetrating region top.
18, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 17, wherein, the thickness of this organic material layer is between 20000 dust to 25000 dusts.
19, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 17, wherein, the material of this refraction material layers comprises silicon metal.
20, semi-penetrating and semi-reflective liquid crystal display panel as claimed in claim 17 wherein, also comprises on this second substrate and disposes a chromatic filter layer.
21, a kind of manufacture method of transflective pixel structure comprises:
On a substrate, form an one scan distribution and a grid;
On this substrate, form a gate insulation layer, cover this scan wiring and this grid;
On this gate insulation layer above this grid, form a channel layer;
On this channel layer, form source, and one of formation and the electric connection of this source electrode data wiring;
Form a pixel electrode above this substrate, this pixel electrode and this drain electrode electrically connect, and this pixel electrode has an echo area and a penetrating region;
Above this substrate, form an organic material layer, cover this pixel electrode and this thin film transistor (TFT); And
Form a plurality of refractive pattern at upper surface to this organic material layer that should the penetrating region place.
22, transflective pixel structure as claimed in claim 21, wherein, this refractive pattern is selected from recess patterns, outstanding pattern and makes up one of them.
23, the manufacture method of transflective pixel structure as claimed in claim 21, wherein, after the upper surface of this organic material layer formed described a plurality of refractive pattern, the upper surface that also is included in this organic material layer that should the penetrating region place formed a conformal refraction material layers.
24, the manufacture method of transflective pixel structure as claimed in claim 21, wherein, the method that forms described a plurality of refractive pattern at the upper surface of this organic material layer comprises the little shadow process of carrying out.
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| CNB200510007040XA CN1332253C (en) | 2005-01-27 | 2005-01-27 | Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof |
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| CNB200510007040XA CN1332253C (en) | 2005-01-27 | 2005-01-27 | Semi-penetrating and semi-reflecting liquid-crystal displaying panel, pixel structure and manufacture thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629054A (en) * | 2011-10-20 | 2012-08-08 | 京东方科技集团股份有限公司 | TFT (Thin Film Transistor) array substrate, manufacturing method of TFT array substrate and display device |
| WO2021109339A1 (en) * | 2019-12-04 | 2021-06-10 | 武汉华星光电半导体显示技术有限公司 | Display panel and method for preparing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3714244B2 (en) * | 2001-12-14 | 2005-11-09 | セイコーエプソン株式会社 | Transflective / reflective electro-optical device manufacturing method, transflective / reflective electro-optical device, and electronic apparatus |
| KR100491258B1 (en) * | 2002-12-31 | 2005-05-24 | 엘지.필립스 엘시디 주식회사 | method for fabricating a Transflective liquid crystal display device and the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629054A (en) * | 2011-10-20 | 2012-08-08 | 京东方科技集团股份有限公司 | TFT (Thin Film Transistor) array substrate, manufacturing method of TFT array substrate and display device |
| WO2021109339A1 (en) * | 2019-12-04 | 2021-06-10 | 武汉华星光电半导体显示技术有限公司 | Display panel and method for preparing same |
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