CN1645142A - 高灵敏度巨磁电阻和隧穿磁电阻生物传感器 - Google Patents
高灵敏度巨磁电阻和隧穿磁电阻生物传感器 Download PDFInfo
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- CN1645142A CN1645142A CN 200510005035 CN200510005035A CN1645142A CN 1645142 A CN1645142 A CN 1645142A CN 200510005035 CN200510005035 CN 200510005035 CN 200510005035 A CN200510005035 A CN 200510005035A CN 1645142 A CN1645142 A CN 1645142A
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CN 200510005035 CN1645142A (zh) | 2005-01-31 | 2005-01-31 | 高灵敏度巨磁电阻和隧穿磁电阻生物传感器 |
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CN 200510005035 CN1645142A (zh) | 2005-01-31 | 2005-01-31 | 高灵敏度巨磁电阻和隧穿磁电阻生物传感器 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101042360B (zh) * | 2007-04-20 | 2010-12-01 | 中国科学院电工研究所 | 一种基于巨磁电阻的传感器 |
US8384374B2 (en) | 2007-11-14 | 2013-02-26 | Dongguan Bosh Biotechnologies, Ltd. | Apparatus for automatically testing integrated CMOS magnetoresistive biochips |
CN104919612A (zh) * | 2013-03-15 | 2015-09-16 | 马格雷股份有限公司 | 磁隧道结传感器及使用方法 |
-
2005
- 2005-01-31 CN CN 200510005035 patent/CN1645142A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101042360B (zh) * | 2007-04-20 | 2010-12-01 | 中国科学院电工研究所 | 一种基于巨磁电阻的传感器 |
US8384374B2 (en) | 2007-11-14 | 2013-02-26 | Dongguan Bosh Biotechnologies, Ltd. | Apparatus for automatically testing integrated CMOS magnetoresistive biochips |
CN104919612A (zh) * | 2013-03-15 | 2015-09-16 | 马格雷股份有限公司 | 磁隧道结传感器及使用方法 |
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Owner name: INST. OF PHYSICS, CAS; APPLICANT Free format text: FORMER OWNER: INST. OF PHYSICS, CAS Effective date: 20060811 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060811 Address after: 100080 No. 8, South Third Street, Haidian District, Beijing, Zhongguancun Applicant after: Research Institute of Physics, Chinese Academy of Sciences Co-applicant after: Institute of Electrical Engineering of the Chinese Academy of Sciences Address before: 100080 No. 8, South Third Street, Haidian District, Beijing, Zhongguancun Applicant before: Research Institute of Physics, Chinese Academy of Sciences |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |