CN1635425A - Method for restoring chromium pollution point on mask and used positioning board - Google Patents
Method for restoring chromium pollution point on mask and used positioning board Download PDFInfo
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- CN1635425A CN1635425A CN 200310122957 CN200310122957A CN1635425A CN 1635425 A CN1635425 A CN 1635425A CN 200310122957 CN200310122957 CN 200310122957 CN 200310122957 A CN200310122957 A CN 200310122957A CN 1635425 A CN1635425 A CN 1635425A
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Abstract
This invention provides a position plate and the mask defect repairing method by use of the plate. The method adopts general light source to selectively remove the stains without damage to the quartz layer.
Description
Technical field
Relate generally to field of manufacturing semiconductor devices of the present invention more particularly, the present invention relates to a kind of location version, and the method for using this location version to repair defective mask.
Background technology
In field of manufacturing semiconductor devices, particularly in pattern exposure process, be extensive use of various masks.For example, use more quartz mask in recent years, its photic zone is quartzy, and its light tight district is then formed by chromium.
The effect of mask is to block the light (for example ultraviolet ray, electron beam, X ray etc.) that shines on the substrate surface photoresist film selectively, so that form the photoresist pattern.The quality of mask will directly influence the quality of formed photoresist pattern, thereby influence the performance and the yield rate of device, therefore, for the quality of mask the higher requirement of ratio often be arranged.For example, for quartz mask,, will make those former zones that should be exposed to expose, thereby destroy pre-designed photoresist pattern if lighttight chromium is stayed photic zone.Therefore, the pollution of chromium point that remains in photic zone must be removed.
In recent years, employing laser or ion beam usually during the pollution of chromium point on repairing quartz mask.At first, high-energy light beam guiding is focused on the points of contamination, make local tiny area moment be heated, vaporize, thereby remove chromium pollutant by machine.But, when the chromium pollutant area is big, be difficult to control the intensity of repairing; And, when repairing, high-energy light beam guiding can influence points of contamination lower floor and quartz on every side thereof, and regional uneven after make repairing influences its smooth degree, after this, when exposure, when light saw through these zones, a part of light can be scattered, thereby cause the variation of transmitted light local strength, and further influence the quality of formed photoresist pattern.Therefore, these defective quartz areas also need further to detect and maintenance, thereby have increased manufacturing cost, have also influenced the output and the quality of mask.
Summary of the invention
The purpose of this invention is to provide a kind of method of locating version and using this location version to repair the defectiveness mask, adopt ordinary light source, for example ultraviolet, so that optionally clear the pollution off, chromium for example, and can not cause damage to mask.
One aspect of the present invention provides a kind of location version that is used to repair defective mask, is made of the upper and lower of tight contact, and wherein, lower floor is a photic zone, is made of light transmissive material, for example glass or quartz; The upper strata is light tight district, is made of light-proof material, for example chromium; The upper strata does not exceed the scope of lower floor, it is characterized in that: around the upper strata is the groove that is used to locate; The workspace that one or more hollows are arranged in the central area on upper strata; The position of described workspace can be determined by described groove.
In a preferred embodiment of the invention, the circumferential profile of location version is a rectangle, and size is about 150 μ m * 150 μ m; The workspace is a rectangle, and width is about 2 μ m, and length is that about 0.5 μ m is to about 10 μ m.
When repairing defective mask, if adopt location of the present invention version, the position of location points of contamination that can be more accurate is realized that fixed point is exposed, fixed point is repaired, and the size that can repair minimum points of contamination can be reduced to about 1 μ m to about 5 μ m.If do not adopt location of the present invention version, then be subject to the focusing power of light source, can only repair little points of contamination, and the location is also relatively more difficult to about 20 μ m.
The present invention provides a kind of method that is used to repair defective mask on the other hand, comprises the steps:
(1) on defective mask, applies one deck photoresist;
(2) location of the present invention version is placed described defective mask top, make defective on the described defectiveness mask, for example chromium can come out directly over the workspace;
(3) by described location version, described photoresist is exposed;
(4) photoresist after the described exposure is developed;
(5) the described defectiveness mask of etching;
(6) remove described photoresist.
In a preferred embodiment of the invention, method of the present invention is used to repair the pollution of chromium point on the quartz mask; Exposure described in the step (3) is proximity printing, and used light source is ultraviolet ray; Etching described in the step (5) is a dry etching.
Repair the method for defectiveness mask compares with traditional employing laser or ion beam, the method that utilization provided by the present invention location version is repaired the defectiveness mask by the ordinary light source exposure, can optionally remove pollutant, chromium for example, do not reach quartz on every side and can not damage lower floor, can not change the local light intensity in the zone of repairing, thereby make that the quality of repairing the back mask is higher; In addition, owing to adopted location version, the therefore position of accurate localization points of contamination comparatively, and can repair little points of contamination to about 1 μ m.
Description of drawings
Fig. 1 shows the location version of all size of the present invention.
Fig. 2 A-Fig. 2 C shows the state of location of the present invention version when work.
Fig. 3 shows when utilizing method of the present invention to repair defective mask, the position relation of location version and defectiveness mask.
Fig. 4 is the process flow diagram of the method for reparation defectiveness mask of the present invention.
Embodiment
The present invention provide specific embodiments of the invention in order to explain in further detail below in conjunction with accompanying drawing.When these embodiment are described, known method, technology, device and material etc. are not described in detail, a presumptuous guest usurps the role of the host to avoid, desalinated main contents of the present invention.
Embodiment one: the preparation of location version
Fig. 1 shows the location version of all size of the present invention.Version 10 the upper and lower by tight contact, location of the present invention constitute, and wherein, lower floor is a photic zone, is made of light transmissive material, as glass or quartz; The upper strata is light tight district, is made of light-proof material, for example chromium; The upper strata does not exceed the scope of lower floor, wherein, is the groove 14 that is used to locate around the upper strata; The workspace 12 that one or more hollows are arranged in the central area on upper strata allows light to see through, and the position of described workspace can be determined by described groove; Black region 16 is light tight district.
Location of the present invention version can be made by a parent mask.The parent mask is made of the upper and lower of tight contact, and the upper strata does not exceed the scope of lower floor; Lower floor is a photic zone, and its material can be the various materials that those of ordinary skills are familiar with, for example quartz or glass; The upper strata is uniform light tight district, does not wherein have the zone of printing opacity, and its material can be the various materials that those of ordinary skills are familiar with, for example chromium.
Can the upper strata be etched predetermined shape by the parent mask is carried out patterning, for example, form upper strata groove on every side, form one or more workspaces etc., thereby obtain location of the present invention version.The whole bag of tricks that can adopt those of ordinary skills to be familiar with, for example: on the parent mask, apply one deck photoresist, by a mask photoresist is exposed with predetermined characteristic, develop, carry out etching (for example, the wet etching that is undertaken by water-soluble etching liquid, perhaps dry etching) then, have the upper strata of reservation shape with formation, thereby obtain location of the present invention version.
The shape and size of parent mask can be decided as required, for example, decide according to the features such as shape and size of defectiveness mask to be repaired.The parent mask can be a different shape, is preferably rectangle, for example square.The parent mask can be various sizes, for example 150 μ m * 150 μ m.
The shape of workspace, size and quantity can be decided as required, for example, decide according to shape, size and the quantity of pollution of chromium point to be repaired.The workspace can be different shape and size, and for example, width is about 2 μ m, length is about the rectangle of 0.5 μ m to about 10 μ m.The workspace of difformity and size is suitable for repairing the points of contamination of difformity and size.If pollution of chromium point to be repaired is more, can on the version of location, prepare a plurality of workspaces, features such as the shape of workspace, size can be identical, also can be different.
Embodiment two: utilize the location version to repair defective mask
Fig. 2 A-Fig. 2 C shows a kind of duty of location version of the present invention when being used to repair defective mask.Defective mask 48 is divided into light tight district 40 and photic zone 42, and wherein, pollution of chromium point 44 is positioned on the photic zone 42, shown in Fig. 2 A.When repairing, by the groove 14 around the location version 10, with location version 10 be positioned over defective mask 48 above, make pollution of chromium point 44 from workspace 12, come out, shown in Fig. 2 B.Distance between location version 10 and the defective mask 48 is the desired distance of proximity printing.Fig. 2 C is a backplan, and wherein, pollution of chromium point 44 just is positioned at the scope of workspace 12.
Fig. 3 shows when utilizing method of the present invention to repair defective mask, the position relation of location version and defectiveness mask.Employed microscope is the optical microscope with manual focusing function, and preferably can regulate the wavelength of its light source.As shown in Figure 3, the light beam that light source 60 sends, for example ultraviolet ray through wave filter 62, enters camera lens 64, and wherein employed light is reflected light.The camera lens below is two article carrying platforms: upper mounting plate 66 and lower platform 68, the zone line of platform is a hollow, allows light to see through.Location of the present invention version 10 places on the upper mounting plate 66, makes that of place, light tight district faces down; Defective mask 48 places on the lower platform 68, makes upper surface (one side that pollution of chromium point is arranged) up, and wherein, upper mounting plate 66 is positioned at the top of lower platform 68, and its spacing is the desired distance of proximity printing.Upper mounting plate 66 is fixed, but can carry out small rotation; Lower platform 68 can carry out X-Y control.Obtain suitable spacing between two platforms by regulating upper mounting plate 66.
Fig. 4 is the process flow diagram of method provided by the present invention.Details are as follows for concrete steps:
At step S1, evenly apply one deck photoresist at the upper surface (one side that pollution of chromium point is arranged) of defective mask 48, and place on the microscopical lower platform 68, make its upper surface up.Photoresist herein can be various photoresists commonly used in the pattern exposure process.
At step S2, according to quantity, the shape and size of pollution of chromium point, select suitable location version 10, and will locate version and 10 place on the upper mounting plate 66.At microscopically,,, make pollution of chromium point 44 from workspace 12, come out, shown in Fig. 2 B with locating an edition correct position that is positioned defective mask 48 tops by the groove 14 around the version of location.Particularly the pollution of chromium on unit area is counted out more for a long time, can select pollution of chromium point to be exposed subtly by the groove 14 around the version of location.Adjust upper mounting plate 66, making the distance of itself and lower platform 68 is the desired distance of proximity printing.
At step S3, photoresist is exposed by microscope.The light source that exposure is adopted is decided according to employed photoresist, for example ultraviolet ray.Because the workspace is printing opacity, therefore, the photoresist on the relevant range, below, workspace is exposed, and the version that is positioned that light tight district hid was regional unexposed.
At step S4, photoresist is developed.The photoresist that is exposed will be removed, thereby chromium pollutant is come out.The method of Xian Yinging can be decided according to used photoresist herein.
At step S5, described defective mask is carried out etching, remove chromium pollutant.Etching can be a whole bag of tricks, for example the dry etching that preferably adopts of the present invention.
At step S6, remove the photoresist on the defectiveness mask.Can pass through the whole bag of tricks well known to those skilled in the art, under the situation of not damaging quartz layer, photoresist be removed.
Like this, repair process has just been finished.If the area of pollution of chromium point is bigger, can repeat above-mentioned correlation step, up to the points of contamination full scale clearance.
It should be noted that, the various operations that relate among the present invention, include but not limited to: apply photoresist, etching is developed in exposure, remove photoresist etc., be the routine techniques in this area, if without specified otherwise, then those skilled in the art can be with reference to various tool book or industry standard and is implemented.
Although the present invention describes with reference to its specific preferred embodiment, it should be appreciated by those skilled in the art, under the situation that does not break away from the spirit and scope of the present invention that are defined by the following claims, can carry out the various modifications of form and details to it.
Claims (9)
1. location version that is used to repair defective mask is made of the upper and lower of tight contact, and wherein, lower floor is a photic zone, is made of light transmissive material; The upper strata is light tight district, is made of light-proof material; The upper strata does not exceed the scope of lower floor, it is characterized in that: around the upper strata is the groove that is used to locate; The workspace that one or more hollows are arranged in the central area on upper strata; The position of described workspace can be determined by described groove.
2. location as claimed in claim 1 version, wherein, there is a workspace central area on described upper strata.
3. location as claimed in claim 1 version, wherein, described light transmissive material is quartz or glass, described light-proof material is a chromium.
4. location as claimed in claim 1 version, wherein, described workspace be shaped as rectangle.
5. location as claimed in claim 4 version, it is characterized in that: the width of described workspace is about 2 μ m, and length is that about 0.5 μ m is to about 10 μ m.
6. a method of using location as claimed in claim 1 version to repair defective mask comprises the steps:
(1) on defective mask, applies one deck photoresist;
(2) described location version is placed described defective mask top, make defective on the described defectiveness mask, for example chromium can come out directly over the workspace;
(3) by described location version, described photoresist is exposed;
(4) photoresist after the described exposure is developed;
(5) the described defectiveness mask of etching;
(6) remove described photoresist.
7. method as claimed in claim 6, wherein, described defective mask is the quartz mask with pollution of chromium point.
8. method as claimed in claim 6, wherein, the exposure described in the step (3) is proximity printing, used light source is ultraviolet ray.
9. method as claimed in claim 6, wherein, the etching described in the step (5) is a dry etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101229575A CN1320407C (en) | 2003-12-30 | 2003-12-30 | Method for restoring chromium pollution point on mask and used positioning board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101229575A CN1320407C (en) | 2003-12-30 | 2003-12-30 | Method for restoring chromium pollution point on mask and used positioning board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1635425A true CN1635425A (en) | 2005-07-06 |
| CN1320407C CN1320407C (en) | 2007-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101229575A Expired - Fee Related CN1320407C (en) | 2003-12-30 | 2003-12-30 | Method for restoring chromium pollution point on mask and used positioning board |
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| CN (1) | CN1320407C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101344717B (en) * | 2008-08-15 | 2011-05-18 | 深圳市路维电子有限公司 | Light shield repair glue |
| CN102566291A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Test system for projection mask |
| CN103941541A (en) * | 2014-04-11 | 2014-07-23 | 京东方科技集团股份有限公司 | Position identifying method and device of mask plate polluted area |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2877838B2 (en) * | 1989-06-06 | 1999-04-05 | 大日本印刷株式会社 | How to repair defects such as emulsion masks |
| GB2237580A (en) * | 1989-11-03 | 1991-05-08 | Marconi Gec Ltd | A method for plating a hole and adjacent surface portion of a printed circuit board |
| KR100434494B1 (en) * | 2001-10-23 | 2004-06-05 | 삼성전자주식회사 | Method for reparing the phase shift mask pattern and phase shift mask repaired by the same method |
-
2003
- 2003-12-30 CN CNB2003101229575A patent/CN1320407C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101344717B (en) * | 2008-08-15 | 2011-05-18 | 深圳市路维电子有限公司 | Light shield repair glue |
| CN102566291A (en) * | 2010-12-29 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Test system for projection mask |
| CN103941541A (en) * | 2014-04-11 | 2014-07-23 | 京东方科技集团股份有限公司 | Position identifying method and device of mask plate polluted area |
| CN103941541B (en) * | 2014-04-11 | 2017-05-24 | 京东方科技集团股份有限公司 | Position identifying method and device of mask plate polluted area |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1320407C (en) | 2007-06-06 |
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070606 Termination date: 20181230 |