CN1632871A - Scan-probe phase-change storing method and device - Google Patents
Scan-probe phase-change storing method and device Download PDFInfo
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- CN1632871A CN1632871A CN 200410066138 CN200410066138A CN1632871A CN 1632871 A CN1632871 A CN 1632871A CN 200410066138 CN200410066138 CN 200410066138 CN 200410066138 A CN200410066138 A CN 200410066138A CN 1632871 A CN1632871 A CN 1632871A
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Abstract
It is an information memory method and its device by scanning probe guiding phase change. It is based on scanning probe microscope and the conductive probe contacts the upper electrode in the memory structure to guide the medium to generate phase change and at the same time to connect the down electrode with current voltage conversion module to change the current signals in loop into voltage signals to be readable. Then it goes back to the microscope to achieve the real-time monitoring of the memory process.
Description
Technical field
The present invention relates to a kind of scan-probe phase-change storing method and device thereof
Background technology
In order to satisfy the internet, the requirement of ever-increasing information processing in fields such as multimedia and three-dimensional animation and storage, people wish to obtain the record carrier of vast capacity.Simultaneously, be accompanied by developing rapidly of computing machine communication science and technology, the progress of information storage medium is also at a tremendous pace.It is predicted that the magnetic storage of institute's widespread use and optical storage media were near its physics limit at present 2005, scientists is beginning to try to explore new theory of storage, technology and material, in the hope of breaking through the limit of data storage.The invention of scanning probe microscopy (SPM) for the mankind realize monoatomic manipulation and nanoprocessing provide may, this ability makes it become strong instrument in the Ultrahigh-Density Data Storage research.The function of utilizing the highstrung surface state of SPM to check realizes data read; Realize writing of data by the function that applies nanometer level ultra micro processing such as electricity, power, light to probe.Some inorganic material can realize the marked change of conductivity owing to have the phase transformation performance, therefore be subjected to attention in the scan-probe field of storage.But owing to utilize this type of material to store, pattern does not change when conductivity changes, yet the multi-functional scanning probe microscopy of the Nanoscope III of present widely used U.S. DI company is utilizing under atomic force microscope (AFM) pattern, can not realize the imaging simultaneously of electric current and its pattern, this type of microscopical signal access module can only be accepted external voltage signal in addition, can not the received current signal, these are all given and utilize probe to carry out phase change memory to have brought great inconvenience.
In order to overcome the above problems, part Study person utilizes the high-accuracy and constant pot to solve the electric current imaging problem in recent years, but cost is relatively more expensive, is unfavorable for the industrialization of this type of memory technology.
Summary of the invention
The objective of the invention is to provide a kind of low cost, can realize the scan-probe phase-change storing method and the device thereof of the imaging simultaneously of electric current picture and pattern picture.
A kind of scan-probe phase-change storing method, it is characterized in that: the voltage pulse signal that sends by scanning probe microscopy inside, induce the storage phase change medium in the storage medium layer to undergo phase transition through conducting probe, utilize the inner DC voltage that produces of microscope again, top electrode through same conducting probe contact storage medium layer, and the bottom electrode in the storage medium layer linked to each other with extraneous current/voltage modular converter make voltage transitions become readable current signal, the echo of transferring again micro mirror forms the loop, reaches the purpose of the information of reading.
A kind of scan-probe phase-change memory storage, it is by scanning probe microscopy, virtual signal source and constitute by the storage medium structural sheet that three-layer thin-film is formed, the storage medium structural sheet is mainly at substrate (6) and stacks the bottom electrode (5) that conductive layer forms successively, storage medium layer (4), the top electrode (3) that thin conductive layer forms, wherein top electrode (3) contacts with conducting probe (2), and the outer guide line of bottom electrode (5), form the loop by external circuitry and conducting probe (2), it is characterized in that: be provided with the current/voltage-converted module that links to each other with bottom electrode through lead, it comprises the highly sensitive operational amplifier of a slice, 2 ' pin is a negative input end, 3 ' pin is a positive input terminal, with its by high value resistor R1 and the circuit in parallel with capacitor C 1 after ground connection, 7 ' pin and 4 ' pin are respectively the positive-negative power input end, regulation amount of imports definite value be+15V and-15V, 6 ' pin is an output terminal, between the negative input end of operational amplifier and output terminal a feedback resistance Rf is arranged.
There are two kinds of selection modes in the virtual signal source, and a kind of is variable direct supply, and another kind is the controllable pulse source, and its two reality is realized by software by the control module of scanning probe microscopy.
The invention has the advantages that and adopt highly sensitive operational amplifier to realize the current/voltage conversion, thereby can make microscopical signal access module can receive the voltage signal of reflection loop current characteristic, saved cost simultaneously; Directly adopt microscope internal electric source signal, thereby can directly control by software program easily; To the introducing of upper electrode layer, avoided probe to contact and be scratched damage in the storage medium structure, prolonged its storage life with storage medium.
Description of drawings
Fig. 1 is a structural representation of the present invention,
1 virtual signal source, 2 conducting probes, 3 top electrodes, 4 storage mediums, 5 bottom electrodes, 6 substrates, 7 high precision operating amplifiers, 8 current/voltage modular converters, 9 signal access modules, 10 control display modules 2 ', 3 ', 6 ', 7 ' are the pin of operational amplifier
Embodiment
Describe the concrete structure and the course of work in detail in conjunction with Fig. 1 according to embodiments of the invention.
Whole device branch: produce that storage is write, the virtual signal source 1 of wiping and read signal; Realize the scanning probe microscopy of storage; Storage medium structure as record carrier; Realize that loop current signals converts the current/voltage-converted module 8 of voltage signal to.There are two kinds of selection modes in virtual signal source 1, and a kind of is variable direct supply, and another kind is the controllable pulse source, according to the needs of reading and writing and wiping, selects by the software module of scanning probe microscopy.Utilize controllable pulse to realize writing and wiping of data; And being continued to add DC voltage by a small margin, conducting probe 2 reaches the purpose that reads to data.The virtual signal source 1 actual Ana2 port that derives from the signal access module 9 of scanning probe microscopy, its voltage range is at 0-12V.Storage medium structure on the substrate 6 is made of top electrode 3, storage phase change medium 4, bottom electrode 5, conducting probe is in top electrode contact scanning back and forth, as required, the pulse in acknowledge(ment) signal source comes induced transformation medium 4 to undergo phase transition writing and wiping of realization information by top electrode 3, it is this owing to undergoing phase transition the marked change that causes conductivity to utilize by a small margin constant voltage to detect again, reaches the purpose that information reads like this.Bottom electrode 5 outer guide lines are realized the conversion of the current signal in loop to voltage signal to current/voltage conversion module 8.Current/voltage conversion module 8 mainly is made up of a highly sensitive operational amplifier 7 and feedback resistance Rf and stake resistance R1 and direct earth capacitance C1, wherein selected operational amplifier model is OPA111BM, 2 ' pin is a negative input end, 3 ' pin is a positive input terminal, this programme is with its ground connection, stake resistance R1 choosing value is 1M Ω, direct earth capacitance is 200pF, 7 ' pin and 4 ' pin are respectively the positive-negative power input end, regulation amount of imports definite value be+15V and-15V, 6 ' end pin is an output terminal, the optional ground connection of other pins.According to the needs of enlargement factor, select feedback resistance Rf, it is 1000 times that the present invention needs enlargement factor, is 1k Ω so select Rf.Voltage signal U after the conversion
0Insert the Aux B end of microscopical signal access module 9, just can observe the electric current picture at microscopical control display module 10 like this, reach the purpose that storing process is monitored in real time.
Claims (2)
1. scan-probe phase-change storing method, it is characterized in that: the voltage pulse signal that scanning probe microscopy inside is sent, induce the storage phase change medium in the storage medium layer to undergo phase transition through conducting probe (2), utilize the inner DC voltage that produces of microscope again, top electrode (3) through same conducting probe (2) contact storage medium layer, and the bottom electrode in the storage medium layer (5) linked to each other with extraneous current/voltage modular converter (8) make voltage transitions become readable current signal, the echo of transferring again micro mirror forms the loop, to read information.
2. scan-probe phase-change memory storage, it is by scanning probe microscopy, virtual signal source (1) and constitute by the storage medium structural sheet that three-layer thin-film and substrate are formed, the storage medium structural sheet is mainly at substrate (6) and stacks the bottom electrode (5) that conductive layer forms successively, storage medium layer (4), the top electrode (3) that thin conductive layer forms, wherein top electrode (3) contacts with conducting probe (2), and the outer guide line of bottom electrode (5), form the loop by external circuitry and conducting probe (2), it is characterized in that: be provided with current/voltage-converted module (8), comprise the highly sensitive operational amplifier of a slice (7), 2 ' pin is a negative input end, 3 ' pin is a positive input terminal, with its by high value resistor R1 and the circuit in parallel with capacitor C 1 after ground connection, 7 ' pin and 4 ' pin are respectively the positive-negative power input end, regulation amount of imports definite value be+15V and-15V, 6 ' pin is an output terminal, between the negative input end of operational amplifier and output terminal a feedback resistance Rf is arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410066138 CN1632871B (en) | 2004-12-09 | 2004-12-09 | Scan-probe phase-change storing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410066138 CN1632871B (en) | 2004-12-09 | 2004-12-09 | Scan-probe phase-change storing method and device |
Publications (2)
| Publication Number | Publication Date |
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| CN1632871A true CN1632871A (en) | 2005-06-29 |
| CN1632871B CN1632871B (en) | 2011-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200410066138 Expired - Fee Related CN1632871B (en) | 2004-12-09 | 2004-12-09 | Scan-probe phase-change storing method and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832050B (en) * | 2006-02-10 | 2011-09-21 | 中国科学院上海微系统与信息技术研究所 | Method for reliable contact of probe and nano-electrode of phase transformation memory device unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100411038C (en) * | 2002-09-11 | 2008-08-13 | 国际商业机器公司 | Probe memory device and method for detecting data in probe memory device |
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- 2004-12-09 CN CN 200410066138 patent/CN1632871B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832050B (en) * | 2006-02-10 | 2011-09-21 | 中国科学院上海微系统与信息技术研究所 | Method for reliable contact of probe and nano-electrode of phase transformation memory device unit |
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| CN1632871B (en) | 2011-08-10 |
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