CN1619841A - Luminous dipolar body manufacturing process - Google Patents
Luminous dipolar body manufacturing process Download PDFInfo
- Publication number
- CN1619841A CN1619841A CNA2003101134005A CN200310113400A CN1619841A CN 1619841 A CN1619841 A CN 1619841A CN A2003101134005 A CNA2003101134005 A CN A2003101134005A CN 200310113400 A CN200310113400 A CN 200310113400A CN 1619841 A CN1619841 A CN 1619841A
- Authority
- CN
- China
- Prior art keywords
- light
- emittingdiode
- type resin
- processing procedure
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
A process for making LED contains chip fixing, lead welding, glue packaging, hardening and cutting, testing and package. The glue packaging uses the fluid state high molecule photo sensitive resin glue which contains at least low polymer, one of reactivity monomer and photo initiation agent. In hardening, the photo sensitive resin being glue packaged is exposed in light with wave-length of 200-800nm to lead free radical polymerization reaction of liquid state photo sensitive resin and quick hardened at normal temperature.
Description
Technical field
The invention belongs to semiconductor making method, particularly a kind of light-emittingdiode processing procedure.
Background technology
As shown in Figure 1, the processing procedure of traditional light-emittingdiode (LED) may further comprise the steps:
Step 1
Gu brilliant:
Light-emittingdiode crystal grain is placed on first lead frame that punching press in advance makes, make first lead frame carrying crystal grain.
Step 2
Bonding wire:
See through plain conductor with the conducting that links to each other with second lead frame of light-emittingdiode crystal grain, make the formation of first and second lead frame and light-emittingdiode crystal grain be electrically connected state.
Step 3
Sealing:
After in mould, injecting mobile sticky flow-like epoxy resin, again light-emittingdiode crystal grain and first and second lead frame are placed in the mould.
Step 4
Baking:
Material after the sealing is placed in the heating furnace with the heat baking, and after 3 to 8 hours, the mobile sticky flow-like macromolecule resin sclerosis of waiting is to finish encapsulation.
Step 5
Cutting, test and packing.
In the above-mentioned processing procedure, step 3 and step 4 are general alleged encapsulation step, and the Main Ingredients and Appearance of its encapsulating material ' macromolecule resin ' is epoxy resin (Epoxy).With the encapsulating material of epoxy resin as light-emittingdiode, mainly be because epoxy resin has characteristics such as high-transmittance, high-fire resistance, high thermal conductivity, moisture-proof and corrosion resistance, meet the demand of light-emittingdiode on environment for use and function.
So as to the epoxy resin of packaging LED thermosetting epoxy resin the most generally, be colloid before its sclerosis with mobile sticky fluid or half gel, adding curing agent and after 3 to 8 hours, making its sclerosis, then form cross-linked network purpose solid with high-temperature baking.
In addition, because the thermal coefficient of expansion of epoxy resin and crystal grain has great difference, and at epoxy cure and cooling contraction process, difference because of thermal expansion, may produce internal stress between the two at epoxy resin and crystal grain, cause epoxy resin be full of cracks, crystal grain to break, stick together separating or element is followed pin skew or fracture etc.
By the whole manufacturing process of above-mentioned light-emittingdiode as can be known, wherein quite long for the time of epoxy resin sealing and heated baking, and the composition prescription is complicated, and this also causes light-emittingdiode speed during fabrication to improve, make production efficiency not good, necessity of improvement is arranged in fact.
Summary of the invention
The purpose of this invention is to provide a kind of light-emittingdiode processing procedure that encapsulates quality better, fills a prescription simply, enhances productivity, improves end properties.
The present invention includes solid brilliant step, bonding wire step, sealing step, cure step and cutting, test and packaging step; The sealing step is the photosensitive type resin sealing with the flow-like macromolecule resin; The photosensitive type resin comprise at least by one of in oligopolymer and the reactive monomer and the light initiator form; For the photosensitive type resin after the sealing is exposed under the light of wavelength 200nm～800nm, cause the Raolical polymerizable of liquid photosensitive resin in the cure step, and quick-hardening under room temperature.
Wherein:
The light of cure step medium wavelength 200nm～800nm comprises at least and does not contain ultrared visible light and ultraviolet ray.
Comprise 0.1%～20% silicon alkane coupling agent in the sealing step in the flow-like photosensitive type resin.
Comprise 0.01%～15% ultra-violet absorber in the flow-like photosensitive type resin in the sealing step.
Comprise 0.01%～20% obstruction amine in the sealing step in the flow-like photosensitive type resin.
Owing to the present invention includes solid brilliant step, bonding wire step, sealing step, cure step and cutting, test and packaging step; The sealing step is the photosensitive type resin sealing with the flow-like macromolecule resin; The photosensitive type resin comprise at least by one of in oligopolymer and the reactive monomer and the light initiator form; For the photosensitive type resin after the sealing is exposed under the light of wavelength 200nm～800nm, cause the Raolical polymerizable of liquid photosensitive resin in the cure step, and quick-hardening under room temperature.No matter all be much better than the light-emittingdiode of conventional process manufacturing at hardness, setting rate, ultraviolet resistance color shifting properties etc. with light-emittingdiode finished product that the present invention was finished; Flow-like photosensitive type resin (Photo-sensitivepolymer) only need be exposed under the light of wavelength 200nm～800nm quick-hardening at room temperature after the particularly important is sealing of the present invention; And conventional process need place heating furnace can harden in 3 to 8 hours with high-temperature baking after sealing.Obviously, the present invention can effectively save man-hour, enhance productivity.Not only prescription simple, enhance productivity, and encapsulate quality better, improve end properties, thereby reach purpose of the present invention.
Description of drawings
Fig. 1, be known light-emittingdiode manufacturing flow chart.
Fig. 2, for flow chart of the present invention.
Embodiment
As shown in Figure 2, the present invention includes following steps:
Step 1
Gu brilliant:
Light-emittingdiode crystal grain is placed on first lead frame that punching press in advance makes, make first lead frame carrying crystal grain.
Step 2
Bonding wire:
See through plain conductor with the conducting that links to each other with second lead frame of light-emittingdiode crystal grain, make the formation of first and second lead frame and light-emittingdiode crystal grain be electrically connected state.
Step 3
Sealing:
After in mould, injecting flow-like photosensitive type resin, again light-emittingdiode crystal grain and first and second lead frame are placed in the mould.The photosensitive type resin is the flow-like macromolecule resin, and it comprises at least by one of in oligopolymer (Oligomer) and the reactive monomer (Monomer) and the photosensitive type resin (Photo-sensitive polymer) formed of light initiator (Photointiator).
Step 4
Sclerosis:
Photosensitive type resin after the sealing is exposed under the light of wavelength 200nm～800nm about 5 to 15 seconds, can causes the Raolical polymerizable of liquid photosensitive resin, and in the room temperature photosensitive type resin quick-hardening of ordering.Can save traditional light-emittingdiode reaches 3 to 8 hours in encapsulation procedure the heated baking time whereby, to reach the effect of enhancing productivity.The light of wavelength 200nm～800nm comprises at least and does not contain ultrared visible light and ultraviolet ray.
Step 5
Cutting, test and packing.
With light-emittingdiode finished product that the present invention was finished with the light-emittingdiode of the processing procedure manufacturing of traditional light-emittingdiode (LED) relatively shown in subordinate list:
| Traditional hot constrictive type LED | The LED that the present invention makes | Advantage of the present invention | |
| Hardness Hardness | High High | Very high Very High | The protection Better Protection to Components preferable to the composition tool |
| Moulding firm time Curing time | 3 to 8hrs (hour) | 5～15seconds (second) | The setting rate Very high curing speed that is exceedingly fast |
| The light transmittance Visible light trans-parency (%) of wavelength 400nm～800nm | 90～92 | 90～93 | Identical or higher Same or Higher |
| Shaping sclerosis mode | Need to add curing agent and mixed | Do not need mixed hardening agent and | Reduce flow process, improvement system |
| Curing method | Close back heat hardening Mixed with hard-ener and cured by heat | But encapsulating back light sclerosis No hardener needed and cured by light | Journey can significantly improve production capacity Reducd production processes and in-crease productivity |
| Viscosity viscosity | Very high and longer Very High of the encapsulating time and More Difficult to Process (3000-7000cps) of viscosity | Viscosity is low and be easy to moulding Low viscosity Very Easy to Process (200-800 cps) | The encapsulating time is short and be easy to handle Fast Filling Time and Easy Handling |
| Ultraviolet resistance variable color Resistance to UV degradation | In wait until good Medimu-Good | Good Good | Has preferable ultraviolet light variable color Better UV resistance |
| Electrical insulative property Dielectric properties | Medium Medium | Outstanding Excellent | Insulating properties characteristic Excellent di-electric properties |
As mentioned above, no matter all be much better than the light-emittingdiode of conventional process manufacturing at hardness, setting rate, ultraviolet resistance color shifting properties etc. with light-emittingdiode finished product that the present invention was finished.Wherein the particularly important is flow-like photosensitive type resin (Photo-sensitive polymer) after the sealing of the present invention and only need be exposed under the light of wavelength 200nm～800nm about 5 to 15 seconds, quick-hardening at room temperature; And conventional process need place heating furnace can harden in 3 to 8 hours with high-temperature baking after sealing.Obviously, the present invention can effectively save man-hour, enhance productivity.
In addition, the present invention can add 0.1%～20% silicon alkane coupling agent (Silane) in encapsulating material when implementing, to increase the conjugation grade between the material; Add 0.01%～15% ultra-violet absorber (UV Absorber), increase the ultraviolet light characteristic to absorb ultraviolet light; Add 0.01%～20% obstruction amine (Hindered Amine Light Stabilizer), destroy chemical constitution to avoid free radical.
Claims (9)
1, a kind of light-emittingdiode processing procedure, it comprises solid brilliant step, bonding wire step, sealing step, cure step and cutting, test and packaging step; It is characterized in that described sealing step is the photosensitive type resin sealing with the flow-like macromolecule resin; The photosensitive type resin comprise at least by one of in oligopolymer and the reactive monomer and the light initiator form; For the photosensitive type resin after the sealing is exposed under the light of wavelength 200nm～800nm, cause the Raolical polymerizable of liquid photosensitive resin in the cure step, and quick-hardening under room temperature.
2, light-emittingdiode processing procedure according to claim 1, the light that it is characterized in that described cure step medium wavelength 200nm～800nm comprise at least and do not contain ultrared visible light and ultraviolet ray.
3, light-emittingdiode processing procedure according to claim 1 is characterized in that comprising in the flow-like photosensitive type resin in the described sealing step 0.1%～20% silicon alkane coupling agent.
4, light-emittingdiode processing procedure according to claim 1 is characterized in that comprising 0.01%～15% ultra-violet absorber in the flow-like photosensitive type resin in the described sealing step.
5, light-emittingdiode processing procedure according to claim 3 is characterized in that comprising 0.01%～15% ultra-violet absorber in the flow-like photosensitive type resin in the described sealing step.
6, light-emittingdiode processing procedure according to claim 1 is characterized in that comprising in the flow-like photosensitive type resin in the described sealing step 0.01%～20% obstruction amine.
7, light-emittingdiode processing procedure according to claim 3 is characterized in that comprising in the flow-like photosensitive type resin in the described sealing step 0.01%～20% obstruction amine.
8, light-emittingdiode processing procedure according to claim 4 is characterized in that comprising in the flow-like photosensitive type resin in the described sealing step 0.01%～20% obstruction amine.
9, light-emittingdiode processing procedure according to claim 5 is characterized in that comprising in the flow-like photosensitive type resin in the described sealing step 0.01%～20% obstruction amine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101134005A CN1619841A (en) | 2003-11-18 | 2003-11-18 | Luminous dipolar body manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101134005A CN1619841A (en) | 2003-11-18 | 2003-11-18 | Luminous dipolar body manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1619841A true CN1619841A (en) | 2005-05-25 |
Family
ID=34759928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2003101134005A Pending CN1619841A (en) | 2003-11-18 | 2003-11-18 | Luminous dipolar body manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1619841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628971A (en) * | 2011-05-03 | 2012-08-08 | 京东方科技集团股份有限公司 | Color filter and method and apparatus for manufacturing the same |
| CN103199179A (en) * | 2013-04-18 | 2013-07-10 | 苏州东山精密制造股份有限公司 | Light emitting diode (LED) light source and sealing method thereof |
-
2003
- 2003-11-18 CN CNA2003101134005A patent/CN1619841A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628971A (en) * | 2011-05-03 | 2012-08-08 | 京东方科技集团股份有限公司 | Color filter and method and apparatus for manufacturing the same |
| CN103199179A (en) * | 2013-04-18 | 2013-07-10 | 苏州东山精密制造股份有限公司 | Light emitting diode (LED) light source and sealing method thereof |
| CN103199179B (en) * | 2013-04-18 | 2015-11-25 | 苏州东山精密制造股份有限公司 | A kind of LED light source and glue sealing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6958250B2 (en) | Light-emitting diode encapsulation material and manufacturing process | |
| JP4922189B2 (en) | Optical element, method for manufacturing element that emits radiation, optical element, and element that emits radiation | |
| CN104968724A (en) | Electron beam curable resin composition, reflector resin frame, reflector, semiconductor light-emitting device, and molded article production method | |
| CN1230896C (en) | Method for producing portable electronic device with integrated circuit protected by photosensitive resin | |
| KR20140043878A (en) | Method for producing semiconductor device and semiconductor device | |
| KR102125023B1 (en) | Epoxy resin composition for photosemiconductor element molding and method for preparation of the same | |
| CN115093674A (en) | Modified epoxy resin for LED packaging and preparation method thereof | |
| CN1619841A (en) | Luminous dipolar body manufacturing process | |
| JPH08157561A (en) | Semiconductor-sealing epoxy resin composition and semiconductor device | |
| CN1321179A (en) | Epoxy resin composition and semiconductor device | |
| JP2511282B2 (en) | Epoxy resin composition | |
| JP3338473B2 (en) | Optical device manufacturing method | |
| CN111410932B (en) | Methyl organosilicon adhesive with excellent flexibility and strong adhesion for LED | |
| JP2827115B2 (en) | Resin-sealed semiconductor device | |
| KR102146995B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated by using the same | |
| CN112852371A (en) | Small-spacing epoxy plastic packaging material applied to outdoor display screen and preparation method thereof | |
| CN1449031A (en) | Semiconductor devices | |
| KR101266542B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device package using the same | |
| JP7434025B2 (en) | Resin molded product for optical semiconductor encapsulation and its manufacturing method | |
| JPS63347A (en) | Epoxy resin composition for use in sealing semiconductor | |
| JP2593503B2 (en) | Epoxy resin composition and resin-sealed semiconductor device using the same | |
| JP7465703B2 (en) | Resin molding for sealing optical semiconductors and method for producing same | |
| JPH08162486A (en) | Resin-sealing of semiconductor element | |
| KR101732774B1 (en) | Curable composition | |
| US20220127463A1 (en) | Mold compounds and packages for encapsulating electronic components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |