CN1617257A - Magnetic random access storage - Google Patents
Magnetic random access storage Download PDFInfo
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- CN1617257A CN1617257A CN 200310113535 CN200310113535A CN1617257A CN 1617257 A CN1617257 A CN 1617257A CN 200310113535 CN200310113535 CN 200310113535 CN 200310113535 A CN200310113535 A CN 200310113535A CN 1617257 A CN1617257 A CN 1617257A
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Abstract
The present invention discloses a kind of magnetic RAM (MRAM). The MRAM unit has bit line BL and word write line WWL in the same side of magnetic film memory unit, and the magnetic film memory unit is connected to the drain of the transistor ART via the contact hole. MRAM unit has ground line GND and the word write line WWL configured in the identical metal wiring layer. This structure has the advantages of reduced metal wire layers and contact holes, simplified technological process, lowered manufacture cost and raised MRAM integration level.
Description
Technical field
The present invention relates to a kind of electrodes of magnetoresistive random access memory (Magnetoresistive Random AccessMemory), be called for short MRAM, also claim magnetic RAM (Magnetic Random AccessMemory), wherein the storage unit of MRAM is made of thin magnetic film, and semiconductor devices such as the driving logical unit of MRAM are integrated in the Semiconductor substrate.
Background technology
As the storage unit of MRAM, comprise a such membrane structure in the thin magnetic film at least: [F1/NF/F2].Wherein F1 and F2 represent two magnetic material layers, and NF represents layer of non-magnetic material, and the NF layer is between F1 layer and F2 layer.The direction of magnetization that has and only have one deck among F1 and the F2 is fixed (being called nailed layer) by the material of extraneous certain layer or several layers, thus can not be under little external magnetic field effect random variation; And one deck is a soft magnetosphere in addition, and its direction of magnetization can change (being called free layer) under little external magnetic field effect.The thickness of layer of non-magnetic material is very little, and typical thickness is between 0.5nm and 3.0nm.As storage unit, when the direction of magnetization of F1, F2 was identical, the thin magnetic film storage unit showed low resistance states with such thin magnetic film; And when the direction of magnetization of F1, F2 was opposite, the thin magnetic film storage unit then showed high resistance states.
Therefore, the thin magnetic film storage unit exists two stable resistance states, and free layer can make it recorded information with respect to the direction of magnetization of nailed layer in the thin magnetic film storage unit by changing; And, can obtain the information of its preservation by detecting the resistance states of thin magnetic film storage unit.
The structure of the thin magnetic film storage unit that adopts usually as shown in Figure 1 at present.
This MRAM structural arrangements needs three metal wiring layer M1, M2, M2 and a transition metal layer TM altogether on Semiconductor substrate.Except readout word line RWL, its ground wire GND, write word line WWL are in respectively in the different metal wiring layers with bit line BL.The thin magnetic film storage unit is connected with the drain region of transistor ATR by transition metal layer TM, metal wiring layer M2, M1 and relevant contact hole, and the source region of transistor ATR then is connected with ground wire GND, and the grid of transistor ATR is readout word line RWL.
Information writes to be worked in coordination with by bit line BL and write word line WWL and finishes in the thin magnetic film storage unit.When bit line BL and write word line WWL with the certain time sequence relation when writing working current, the resultant magnetic field in both magnetic field that electric current produced will make the direction of magnetization of free layer in the thin magnetic film storage unit be turned to specific direction, and this direction of magnetization can be stabilized in a state that is supposed in two steady state (SS) after the electric current of cancelling bit line BL, write word line WWL.Promptly realized writing and preserving of information in the thin magnetic film storage unit thus.
The information that reads in the thin magnetic film storage unit is then controlled by readout word line RWL.When allowing to read, readout word line RWL is on a suitable level in control, makes transistor ATR conducting.Exist this moment one by bit line BL (metal wiring layer M3) through thin magnetic film storage unit, transition metal layer TM, contact hole metal wiring layer M2, contact hole, metal wiring layer M1, contact hole, transistor ATR drain region, transistor ATR source region and the electric path of the ground wire GND that arrives.Therefore, give a suitable read current, can extract the current resistance states of thin magnetic film storage unit by bit line BL.Promptly realized reading of information in the thin magnetic film storage unit thus.
As mentioned above, the MRAM of this kind structure need reach three metal wiring layer and a transition metal layer and form it and be electrically connected, and makes manufacturing process complexity, the cost height of MRAM.In addition, before making the thin magnetic film storage unit, technological operations such as deposition for several times, wiring, punching, insulating medium landfill have been passed through on the substrate, make that the profile pattern of thin magnetic film storage unit manufacturing face is relatively poor, must carry out special surface and throw flat PROCESS FOR TREATMENT (such as chemically mechanical polishing CMP, Chemical-MechanicalPolishing) could satisfy the specific (special) requirements of thin magnetic film memory films to its substrate surface planarization, this also is a problem that increases technology difficulty and manufacturing cost.
Summary of the invention
Technical matters to be solved by this invention is in the MRAM with thin magnetic film storing storage units, to reduce the number of metal wiring layer, to reduce process complexity and manufacturing cost.
Another technical matters to be solved by this invention is before thin magnetic film is made, to realize need not the surface flat PROCESS FOR TREATMENT of throwing as much as possible and can satisfy the requirement of thin magnetic film manufacturing to its substrate surface planarization, to reduce process complexity and manufacturing cost.
Another technical matters to be solved by this invention is, a kind of new transistor ATR unit design scheme is proposed in the MRAM structure, every two adjacent transistor ATR unit have shared source region, can improve the thermal equilibrium in the source region in the preparation transistor ATR unit process thus, and make transistor ATR unit allow by bigger read current, improving the signal to noise ratio (S/N ratio) of thin magnetic film storage unit read output signal, and improve the integration density of mram memory cell to a certain extent.
For solving the problems of the technologies described above, the invention provides a kind of MAGNETIC RANDOM ACCESS MEMORY, comprising: by the memory read/write control module array that transistor ATR unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate; The memory cell array that constitutes by the thin magnetic film storage unit; Contact hole, described thin magnetic film storage unit is connected with described transistor ATR unit via this contact hole; And write word line WWL and bit line BL, described write word line WWL and described bit line BL are arranged in the homonymy of described thin magnetic film storage unit, and described write word line WWL directly links to each other with described thin magnetic film storage unit.
The present invention also provides a kind of MAGNETIC RANDOM ACCESS MEMORY, comprising: by the memory read/write control module array that transistor ATR unit constitutes, this read-write control unit array is integrated in the Semiconductor substrate; The memory cell array that constitutes by the thin magnetic film storage unit; Contact hole; Transition metal layer, described thin magnetic film storage unit is connected with described transistor ATR unit with described contact hole via this transition metal layer, makes the thin magnetic film storage unit be positioned at outside the machining area of described transistor ATR unit; And write word line WWL and bit line BL, described write word line WWL and described bit line BL are arranged in the homonymy of described thin magnetic film storage unit, and described write word line WWL directly links to each other with described thin magnetic film storage unit.
The present invention provides a kind of MAGNETIC RANDOM ACCESS MEMORY again, comprise: the memory read/write control module array that constitutes by transistor ATR unit, this read-write control unit array is integrated in the Semiconductor substrate, and every two adjacent transistor ATR unit have shared source region; The memory cell array that constitutes by the thin magnetic film storage unit; Contact hole; And write word line WWL and bit line BL, described write word line WWL and described bit line BL are arranged in the homonymy of described thin magnetic film storage unit, and described write word line WWL directly links to each other with described thin magnetic film storage unit; This scheme also can adopt transition metal layer, and described thin magnetic film storage unit is connected with described transistor ATR unit with described contact hole via this transition metal layer, makes the thin magnetic film storage unit be positioned at outside the machining area of described transistor ATR unit.
The invention provides a kind of MRAM structure, it has the memory cell array that comprises the thin magnetic film storage unit; Have multiple bit lines BL, many write word line WWL, many readout word line RWL and many ground wire GND of realizing the MRAM Card read/write; And having the transistor ATR unit that control is carried out read or write to mram cell, this transistor ATR unit is integrated in the Semiconductor substrate.
The basic structure of described thin magnetic film storage unit is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
Write word line WWL and bit line BL are disposed in the same side of thin magnetic film storage unit, and write word line WWL and ground wire GND are disposed in the same metal wiring layer.Bit line BL and write word line WWL are mutually orthogonal, and the direction of easy axis of at least one magnetic material layer of thin magnetic film storage unit is along the longitudinal direction of bit line BL or write word line WWL.Write word line WWL be arranged in the thin magnetic film storage unit directly over, and the thin magnetic film storage unit directly is connected with write word line WWL.Bit line BL is arranged in the top of write word line WWL, promptly the thin magnetic film storage unit directly over, and bit line BL and write word line WWL bury media isolated by insulation.
The below of thin magnetic film storage unit is by a transition metal layer and a contact hole or directly be connected via the drain region of a contact hole with transistor ATR.
The interior metal wiring layer is total up to two-layer, i.e. bit line BL place layer and write word line WWL and ground wire GND place layer.
The conducting of reading by readout word line RWL oxide-semiconductor control transistors ATR unit of canned data realizes that the readout word line RWL while is as the grid of transistor ATR unit.In the process of sense information, transistor ATR conducting, read current is introduced by write word line WWL and is obtained canned data in the thin magnetic film storage unit.The interior metal wiring layer is total up to two-layer, i.e. bit line BL place layer and write word line WWL and ground wire GND place layer.
The present invention has simplified the cellular construction of MRAM, has reduced metal line number of layers wherein to two-layer.On the other hand, the present invention allows the thin magnetic film storage unit is arranged in the side top (the thin magnetic film memory cell region is in outside the ATR machining area in the vertical projection) of transistor ATR, make the thin magnetic film depositional plane avoid the relatively poor zone of transistor profile pattern, get final product direct growth thin magnetic film memory films and make the thin magnetic film storage unit thereby might throw flat the processing, reduce the complicacy of MRAM manufacturing process without special surface.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is the schematic three dimensional views of the MAGNETIC RANDOM ACCESS MEMORY mram cell structure of prior art;
Fig. 2 is the schematic three dimensional views of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 1 of the present invention;
Fig. 3 is first cut-open view of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 1 of the present invention;
Fig. 4 is the schematic three dimensional views of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 2 of the present invention;
Fig. 5 is first cut-open view of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 2 of the present invention;
Fig. 6 is the schematic three dimensional views of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 3 of the present invention;
Fig. 7 is first cut-open view of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 3 of the present invention;
Fig. 8 is the schematic three dimensional views of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 4 of the present invention;
Fig. 9 is first cut-open view of the mram cell structure of MAGNETIC RANDOM ACCESS MEMORY embodiment 4 of the present invention.
Embodiment
Embodiment 1:
As shown in Figure 2, thin magnetic film memory cell array in the mram memory is combined by a large amount of mram cell 1, in a mram cell 1, comprise a thin magnetic film storage unit 2, transistor ATR 4 and one group of wiring, that is: bit line BL 3a, write word line WWL 3b, ground wire GND 3c, readout word line RWL 3d and be used for contact hole 3e, the 3f that interlayer connects.Wherein, on the layout bit line BL 3a and write word line WWL 3b be arranged in thin magnetic film storage unit 2 above, be in right-angle relationship at vertical projection neutrality line BL 3a and write word line WWL 3b.
As shown in Figure 3, whole M ram cell 1 is made of several layers 5a, 5b, 5c, 5d, 5e, 5f, and the non-functional area in these layers is buried the medium landfill by insulation.Metal wiring layer only has two-layer 5c, 5e in the mram cell 1, i.e. bit line BL 3a place layer 5e and ground wire GND 3c and write word line WWL 3b place layer 5c.Thin magnetic film storage unit 2 is arranged in the below of bit line BL 3a and write word line WWL 3b intersection region, and its underpart electrode is connected with the drain electrode 4c of transistor ATR 4 by contact hole 3f, and its upper electrode directly is connected with write word line WWL 3b.The easy magnetizing axis of the free layer in the thin magnetic film storage unit 2 overlaps with the long side direction of bit line BL 3a or write word line WWL 3b.The width of write word line WWL 3b is equivalent to the width of thin magnetic film storage unit 2.Thus, in the data read operation of MRAM (readout word line RWL 3d gives a suitable level so that transistor ATR 4 is in conducting state), its read current reaches ground wire GND 3c by write word line WWL3b through thin magnetic film storage unit 2, contact hole 3f, transistor ATR drain electrode 4c, transistor ATR source electrode 4a, contact hole 3e, thereby obtain the current resistance states of thin magnetic film storage unit 2, i.e. data of being stored in the mram cell 1.Write word line WWL 3b and bit line BL 3a are isolated by insulation buried dielectric layer 5d.Therefore, (readout word line RWL 3d gives a suitable level so that transistor ATR 4 is in cut-off state in the data write operation of MRAM, at this moment allow write operation), space magnetic field by the working current generation that exists with the certain time sequence relation among bit line BL 3a and the write word line WWL 3b, can make the variation of the direction of magnetization generation expection of the free layer in the thin magnetic film storage unit 2, and be stabilized on the direction that is hoped in two stabilising direction after writing working current removing, also promptly finished writing of data.
Embodiment 2:
As Fig. 4, shown in Figure 5, be the distortion of embodiment 1, increased a transition metal layer 3g, so that thin magnetic film storage unit 2 can be arranged in the vertical projection outside transistor ATR 4 zones.
Thin magnetic film memory cell array in the mram memory is combined by a large amount of mram cell 1, in a mram cell 1, comprise a thin magnetic film storage unit 2, transistor ATR 4 and one group of wiring, that is: bit line BL 3a, write word line WWL 3b, ground wire GND 3c, readout word line RWL 3d and be used for contact hole 3e, 3f and the transition metal layer 3g that interlayer connects.Wherein, on the layout bit line BL 3a and write word line WWL 3b be arranged in thin magnetic film storage unit 2 above, be in right-angle relationship at vertical projection neutrality line BL 3a and write word line WWL 3b.
Thin magnetic film storage unit 2 is arranged in the below of bit line BL 3a and write word line WWL 3b intersection region, its underpart electrode is connected with the drain electrode 4c of transistor ATR 4 with contact hole 3f by transition metal layer 3g, and its upper electrode directly is connected with write word line WWL 3b.The easy magnetizing axis of the free layer in the thin magnetic film storage unit 2 overlaps with the long side direction of bit line BL 3a or write word line WWL 3b.The width of write word line WWL 3b is equivalent to the width of thin magnetic film storage unit 2.Thus, in the data read operation of MRAM (readout word line RWL 3d gives a suitable level so that transistor ATR 4 is in conducting state), its read current reaches ground wire GND 3c by write word line WWL 3b through thin magnetic film storage unit 2, transition metal layer 3g, contact hole 3f, transistor ATR drain electrode 4c, transistor ATR source electrode 4a, contact hole 3e, thereby obtain the current resistance states of thin magnetic film storage unit 2, i.e. data of being stored in the mram cell 1.Write word line WWL 3b and bit line BL 3a are isolated by insulation buried dielectric layer 5d.Therefore, (readout word line RWL 3d gives a suitable level so that transistor ATR 4 is in cut-off state in the data write operation of MRAM, at this moment allow write operation), space magnetic field by the working current generation that exists with the certain time sequence relation among bit line BL 3a and the write word line WWL 3b, can make the variation of the direction of magnetization generation expection of the free layer in the thin magnetic film storage unit 2, and be stabilized on the direction that is hoped in two stabilising direction after writing working current removing, also promptly finished writing of data.
The purpose that has increased transition metal layer is, makes thin magnetic film storage unit 2 avoid the relatively poor surface of transistor ATR 4 regional planarizations by layout, and falls within on the surface of not containing etching or landfill edge.This surf zone still can keep a surface that planarization is intact after the technological operation through early stage.Therefore, present embodiment will allow before the growth of thin magnetic film memory films, throw flat process complexity and the manufacturing cost that further reduces the MRAM manufacturing of handling thereby need not special surface.
Embodiment 3:
As shown in Figure 6, thin magnetic film memory cell array in the mram memory is combined by a large amount of mram cell 1, in a mram cell 1, comprise two thin magnetic film storage unit 2a, 2b, transistor ATR 4 and one group of wiring, that is: bit line BL 3a, write word line WWL 3b, 3i, ground wire GND 3c, readout word line RWL 3d, 3j and be used for contact hole 3e, 3f, the 3h that interlayer connects.Wherein, on the layout bit line BL 3a and write word line WWL 3b, 3i be arranged in thin magnetic film storage unit 2a, 2b above, be in right-angle relationship at vertical projection neutrality line BL 3a and write word line WWL 3b, 3i.
The layout of present embodiment makes two shared ground wire GND 3c of thin magnetic film storage unit 2a, 2b, also is that transistor ATR Unit 4 of adjacent two thin magnetic film storage unit have shared source region 4a.Therefore per two mram cells 1 can be saved the area of at least one ground wire GND; The more important thing is that the layout of present embodiment can be improved the thermal equilibrium in the source region in preparation transistor ATR 4 unit processes, and makes transistor ATR Unit 4 allow by bigger read current, thereby can improve the signal to noise ratio (S/N ratio) of thin magnetic film storage unit read output signal.
Thin magnetic film storage unit 2a, 2b are arranged in the below of bit line BL 3a and write word line WWL 3b, 3i intersection region, its underpart electrode is connected with drain electrode 4c, the 4d of transistor ATR 4 by contact hole 3f, 3h, and its upper electrode directly is connected with write word line WWL 3b, 3i.The easy magnetizing axis of the free layer among thin magnetic film storage unit 2a, the 2b overlaps with the long side direction of bit line BL 3a or write word line WWL 3b, 3i.The width of write word line WWL 3b, 3i is equivalent to the width of thin magnetic film storage unit 2a, 2b.Thus, in the data read operation of MRAM (readout word line RWL 3j (is example with 3j) gives a suitable level so that transistor ATR 4 is in conducting state), its read current reaches ground wire GND 3c by write word line WWL 3i through thin magnetic film storage unit 2b, contact hole 3h, transistor ATR drain electrode 4d, transistor ATR source electrode 4a, contact hole 3e, thereby obtain the current resistance states of thin magnetic film storage unit 2b, i.e. the data that thin magnetic film storage unit 2b is stored in the mram cell 1.Write word line WWL 3b, 3i and bit line BL 3a are isolated by the insulation buried dielectric layer.Therefore, (readout word line RWL 3d, 3j give a suitable level so that transistor ATR 4 is in cut-off state in the data write operation of MRAM, at this moment allow write operation), space magnetic field by the working current generation that exists with the certain time sequence relation among bit line BL 3a and write word line WWL 3b or the 3i, can make the variation of the direction of magnetization generation expection of the free layer among thin magnetic film storage unit 2a or the 2b, and be stabilized on the direction that is hoped in two stabilising direction after writing working current removing, also promptly finished writing of data.
The longitudinal cross-section synoptic diagram of the perspective view of Fig. 7 presentation graphs 6.As seen the characteristics of this embodiment are, are center line with ground wire GND 3c, and other mram cell 1 assemblies are arranged in its symmetria bilateralis.Figure 7 shows that example, the drain region of left side transistor ATR is in the left side, and the drain region of right side transistor ATR is then on the right side.
Embodiment 4:
Fig. 6, embodiments of the invention shown in Figure 73 and Fig. 4, embodiment 2 shown in Figure 5 are combined, also can constitute embodiments of the invention 4, as Fig. 8, shown in Figure 9, make two shared ground wire GND 3c of thin magnetic film storage unit 2a, 2b, the transistor ATR Unit 4 that also are adjacent two thin magnetic film storage unit have shared source region 4a, and two transition metal layer 3g, 3k have been increased, so that thin magnetic film storage unit 2a, 2b can be arranged in the vertical projection outside transistor ATR 4 zones.Its purpose is, makes thin magnetic film storage unit 2 avoid the relatively poor surface of transistor ATR 4 regional planarizations by layout, and falls within on the surface of not containing etching or landfill edge.This surf zone still can keep a surface that planarization is intact after the technological operation through early stage.Therefore, present embodiment will allow before the growth of thin magnetic film memory films, need not special surface and will throw flat the processing, thereby further reduce process complexity and the manufacturing cost that MRAM makes.Its characteristics greatly reduce the complicacy of MRAM manufacturing process for both having reduced the number of intermetallic metal wiring layer, can save the flat technology of throwing in the whole process flow again, thereby reduce the manufacturing cost of MRAM.
Claims (27)
1. MAGNETIC RANDOM ACCESS MEMORY comprises:
A) the memory read/write control module array that constitutes by transistor ATR (4) unit, this read-write control unit array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2);
C) contact hole, described thin magnetic film storage unit (2) is connected with described transistor ATR (4) unit via contact hole;
D) write word line WWL (3b) and bit line BL (3a),
It is characterized in that: described write word line WWL (3b) and described bit line BL (3a) are arranged in the homonymy of described thin magnetic film storage unit (2), and described write word line WWL (3b) directly links to each other with described thin magnetic film storage unit (2).
2. according to the described MAGNETIC RANDOM ACCESS MEMORY of claim 1, the basic structure that it is characterized in that described thin magnetic film storage unit (2) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
3. according to claim 1 or 2 any one described MAGNETIC RANDOM ACCESS MEMORY, it is characterized in that described bit line BL (3a) and described write word line WWL (3b) are mutually orthogonal, the direction of easy axis of at least one magnetic material layer of described thin magnetic film storage unit (2) is along the longitudinal direction of described bit line BL (3a) or described write word line WWL (3b).
4. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 1～3, it is characterized in that described write word line WWL (3b) be arranged in described thin magnetic film storage unit (2) directly over.
5. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 1～4, it is characterized in that described bit line BL (3a) is arranged in the top of described write word line WWL (3b), be described thin magnetic film storage unit (2) directly over, and described bit line BL (3a) and described write word line WWL (3b) bury media isolated by insulation.
6. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 1～5, the conducting of reading by readout word line RWL (3d) control described transistor ATR (4) unit that it is characterized in that canned data realizes that described readout word line RWL (3d) while is as the grid of described transistor ATR (4) unit.
7. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 1～6, it is characterized in that in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described write word line WWL (3b) and are obtained canned data in the described thin magnetic film storage unit (2).
8. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 1～7, it is two-layer to it is characterized in that the interior metal wiring layer is total up to, promptly described bit line BL (3a) place layer (5e) and described write word line WWL (3b) and ground wire GND (3c) place layer (5c).
9. MAGNETIC RANDOM ACCESS MEMORY comprises:
A) the memory read/write control module array that constitutes by transistor ATR (4) unit, this read-write control unit array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2);
C) contact hole;
D) write word line WWL (3b) and bit line BL (3a),
It is characterized in that: also comprise transition metal layer (3g), described thin magnetic film storage unit (2) is connected with described transistor ATR (4) unit with described contact hole via this transition metal layer (3g); Described thin magnetic film storage unit (2) is positioned at outside the machining area of described transistor ATR (4) unit.
10. according to the described MAGNETIC RANDOM ACCESS MEMORY of claim 9, the basic structure that it is characterized in that described thin magnetic film storage unit (2) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
11. according to claim 9 or 10 any one described MAGNETIC RANDOM ACCESS MEMORY, it is characterized in that described bit line BL (3a) and described write word line WWL (3b) are mutually orthogonal, the direction of easy axis of at least one magnetic material layer of described thin magnetic film storage unit (2) is along the longitudinal direction of described bit line BL (3a) or described write word line WWL (3b).
12. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～11, it is characterized in that described write word line WWL (3b) be arranged in described thin magnetic film storage unit (2) directly over.
13. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～12, it is characterized in that described bit line BL (3a) is arranged in the top of described write word line WWL (3b), be described thin magnetic film storage unit (2) directly over, and described bit line BL (3a) and described write word line WWL (3b) bury media isolated by insulation.
14. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～13, the conducting of reading by readout word line RWL (3d) control described transistor ATR (4) unit that it is characterized in that canned data realizes that described readout word line RWL (3d) while is as the grid of described transistor ATR (4) unit.
15. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～14, it is characterized in that in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described write word line WWL (3b) and are obtained canned data in the described thin magnetic film storage unit (2).
16. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～15, it is characterized in that described write word line WWL (3b) and described bit line BL (3a) are arranged in the homonymy of described thin magnetic film storage unit (2), and described write word line WWL (3b) links to each other directly with described thin magnetic film storage unit (2)
17. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 9～16, it is two-layer to it is characterized in that the interior metal wiring layer is total up to, promptly described bit line BL (3a) place layer and described write word line WWL (3b) and ground wire GND (3c) place layer.
18. a MAGNETIC RANDOM ACCESS MEMORY comprises:
A) the memory read/write control module array that constitutes by transistor ATR (4) unit, this read-write control unit array is integrated in the Semiconductor substrate;
B) memory cell array that constitutes by thin magnetic film storage unit (2a, 2b);
C) contact hole;
D) write word line WWL (3i, 3b) and bit line BL (3a),
It is characterized in that: every adjacent two transistor ATR (4) unit has shared source region.
19. according to the described MAGNETIC RANDOM ACCESS MEMORY of claim 18, the basic structure that it is characterized in that described thin magnetic film storage unit (2a, 2b) is made of two-layer magnetic material layer and the layer of non-magnetic material between two magnetospheres, and canned data is represented by the magnetized state of one of them magnetic material layer and preserved.
20. according to claim 18 or 19 any one described MAGNETIC RANDOM ACCESS MEMORY, it is characterized in that described bit line BL (3a) and described write word line WWL (3i, 3b) are mutually orthogonal, the direction of easy axis of at least one magnetic material layer of described thin magnetic film storage unit (2b, 2a) is along the longitudinal direction of described bit line BL (3a) or described write word line WWL (3i, 3b).
21. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～20, it is characterized in that described write word line WWL (3i, 3b) be arranged in described thin magnetic film storage unit (2a, 2a) directly over.
22. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～21, it is characterized in that described bit line BL (3a) is arranged in the top of described write word line WWL (3i, 3b), be described thin magnetic film storage unit (2b, 2a) directly over, and described bit line BL (3a) and described write word line WWL (3i, 3b) bury media isolated by insulation.
23. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～22, the conducting of reading by readout word line RWL (3d, 3j) control described transistor ATR (4) unit that it is characterized in that canned data realizes that described readout word line RWL (3d, the 3j) while is as the grid of described transistor ATR (4) unit.
24. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～23, it is characterized in that in the process of sense information, described transistor ATR (4) conducting, read current are introduced by described write word line WWL (3i, 3b) and are obtained canned data in the described thin magnetic film storage unit (2b, 2a).
25. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～24, it is characterized in that described write word line WWL (3i, 3b) and described bit line BL (3a) are arranged in the homonymy of described thin magnetic film storage unit (2b, 2a), and described write word line WWL (3i, 3b) links to each other directly with described thin magnetic film storage unit (2b, 2a).
26. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～25, it is characterized in that also comprising transition metal layer (3k, 3g), described thin magnetic film storage unit (2b, 2a) is connected with described transistor ATR (4) unit with described contact hole via this transition metal layer (3k, 3g), is positioned at outside the machining area of described transistor ATR (4) unit.
27. according to any one described MAGNETIC RANDOM ACCESS MEMORY of claim 18～26, it is two-layer to it is characterized in that the interior metal wiring layer is total up to, promptly described bit line BL (3a) place layer and described write word line WWL (3i, 3b) and ground wire GND (3c) place layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101135351A CN100485805C (en) | 2003-11-14 | 2003-11-14 | Magnetic random access storage |
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| CNB2003101135351A CN100485805C (en) | 2003-11-14 | 2003-11-14 | Magnetic random access storage |
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| CN100485805C CN100485805C (en) | 2009-05-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007076718A1 (en) * | 2005-12-31 | 2007-07-12 | Institute Of Physics, Chinese Academy Of Sciences | A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| CN101221849B (en) * | 2007-01-09 | 2011-04-06 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100446616B1 (en) * | 2001-10-18 | 2004-09-04 | 삼성전자주식회사 | Single transistor type magnetic random access memory device and operating and manufacturing method thereof |
| CN2805022Y (en) * | 2003-11-14 | 2006-08-09 | 中国科学院物理研究所 | Magnetic random axxess storage device |
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2003
- 2003-11-14 CN CNB2003101135351A patent/CN100485805C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007076718A1 (en) * | 2005-12-31 | 2007-07-12 | Institute Of Physics, Chinese Academy Of Sciences | A close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| US7936595B2 (en) | 2005-12-31 | 2011-05-03 | Institute Of Physics, Chinese Academy Of Sciences | Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same |
| CN101221849B (en) * | 2007-01-09 | 2011-04-06 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
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| CN100485805C (en) | 2009-05-06 |
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