CN1595530A - DRAM updated structure capable of changing frequency elastically - Google Patents
DRAM updated structure capable of changing frequency elastically Download PDFInfo
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- CN1595530A CN1595530A CN 03158924 CN03158924A CN1595530A CN 1595530 A CN1595530 A CN 1595530A CN 03158924 CN03158924 CN 03158924 CN 03158924 A CN03158924 A CN 03158924A CN 1595530 A CN1595530 A CN 1595530A
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Abstract
The invention relates to a method and a device, providing the dynamic random access memory to refresh the different frequencies when it is in the operating mode or in the armed mode. In addition, in the operating or armed mode, the invention makes use of different frequencies to reach the optimum electric power consumption and the data integrity of the dynamic random access memory. The refresh frequency in the operating mode is higher than that in the armed mode. The refresh frequency in the operating mode is higher than that in the operating mode of the previous technique. The refresh frequency in the armed mode is lower than that in the armed mode of the previous technique. The higher refresh frequency in the operating mode allows the decreased storage data, as a result of the condenser discharge generated from linking the chosen adjacent character set wire, to be recovered rapidly. The lower refresh frequency in the armed mode provides the lower electric power consumption in the armed mode, which is used to compensate the higher electric power consumption caused by the higher refresh frequency in the operating mode.
Description
Technical field
The invention relates to a kind of Dynamic Random Access Memory (dynamic random access memory, DRAM) method for updating and device.Especially finger is a kind of in work and standby, and the DRAM of utilization renewal different frequency is new construction more.
Background technology
See also Fig. 1, Fig. 1 is the memory body memory location (cell) for background technology, and the subsystem that reads and write (sub-system).As shown in the figure, bit line (bit line) 110 is connected to sensing amplifier (Sense Amplifier, SA) 120.Bit line 110 also is connected to the metal oxide semiconductor field effect electric crystal (NMOS FET) 130 of N channel.Bit line 110 is connected to the drain (drain) of NMOS FET 130.The casket utmost point (gate) of NMOS FET 130 is connected to word group line (word line, WL) 140.The source electrode of NMOS FET 130 (source) output one signal 150.The voltage of signal 150 is by a capacitor 160 or be referred to as the memory body memory location and kept.Memory body memory location logical zero is dynamically to be stored in capacitor 160 with the logical value of " 1 ".Capacitor 160 ground connection 170.
Fig. 2 represents in the prior art presentation graphs of two neighborhood word group line n and word group line n+1.The example of Fig. 2 represents that word group line n 115 is chosen to the execution access action, and word group line n+1 125 there is no the action of conversion or access.The electric charge that is stored in memory body memory location 155 can be subjected to influence, upset even the change in the conversion of word group line n 115 word group lines.
There is not chosen memory body memory location to be connected to the source electrode of NMOS FET 135.The casket utmost point of NMOS FET 135 is connected to word group line n+1 125.Word group line n+1 125 does not have the action of conversion or access at this example of Fig. 2.Idle memory body memory location voltage table is shown 145.The ground connection 165 of idle memory body memory location 155 capacitors.The bit line is expressed as 136.
As seen, memory body memory location 185 is by 115 accesses of word group line n in Fig. 2.Word group line n 115 is connected to the casket utmost point of NMOSFET 175.The character line is connected to the drain of NMOS FET 175.The source electrode of NMOS FET 175 is connected to the capacitor 185 of memory body memory location.The ground connection 195 of capacitor.The bit line is expressed as 176.
Word group line word group line n 115 in work is switched to high state and becomes logical one, has a positive coupling capacitance to be connected to 125 of two word group line word group line n 115 and word group line n+1.Be converted to high state if the result works as word group line n+1 125, the capacitor C gs between NMOS FET 135 casket sources has one just connecting.This will cause the voltage 145 at memory body memory location capacitor 155 to rise.If before had a logical one to be stored in memory body memory location capacitor 155, above being of coupled connections of word group line make logical one can't correctly change to logical zero at memory body memory location capacitor 155.
Word group line word group line n 115 in work is switched to low state and becomes logical zero.There is a negative coupling capacitance to be connected to 125 of two word group line word group line n 115 and word group line n+1.Be converted to low state if the result works as word group line n+1 125, the capacitor C gs between NMOS FET 135 casket sources has a negative connection.This will cause the voltage 145 at memory body memory location capacitor 155 to descend.If before had a logical zero to be stored in memory body memory location capacitor 155, above being of coupled connections of word group line can make logical zero can't correctly change to logical one at memory body memory location capacitor 155.
United States Patent (USP) case number 6,363,024 by Mr. Fibranz propose a kind of in order to realize upgrading automatically the method for sequence.Be the clock signal that utilizes at DRAM, DRAM be divided into many data bases (Memory Bank) synchronously, to reach the purpose that is automatically updated in sequence among the DRAM.
United States Patent (USP) case numbers 6,310,814 is proposed a kind of in order to carry out the RambusDRAM apparatus and method of upgrading operation by people such as Mr.s Hampel.This case proposes a kind of apparatus and method and is updated among the DRAM in advance memory body memory location with first and second row in the mass memory storehouse that behavior unit was organized into simultaneously.
United States Patent (USP) case numbers 6,212,599 is by a kind of method and apparatus that comprises the memory body control system that is used in one second controller that DRAM upgrades between rest period of propositions such as Mr. Baweja.The described memory body control system of this case includes and is designed to when first operator scheme, uses one first controller of a clock pulse with access and renewal DRAM.
United States Patent (USP) case numbers 6,094,705 is proposed a kind of selective d RAM by Sony and is upgraded to lower the method and system of power consumption, and this case discloses a kind of System and method for, in order to upgrade memory array.This method and system comprises provides a plurality of effective bits, and each effective bit is relevant with the row (row) in the memory device.
Summary of the invention
Fundamental purpose of the present invention provides a kind of method and apparatus, utilizes frequencies different in work and standby to upgrade DRAM.Further target is to utilize different frequencies to upgrade in work and standby, with the complete data of optimization power consumption and DRAM.
Secondary objective of the present invention provides a kind of method and apparatus at work and standby usefulness elasticity frequency renewal DRAM.This structure provides than the high renewal frequency of standby to mode of operation.The renewal frequency of mode of operation than prior art in the renewal frequency height of mode of operation.Renewal frequency at standby is lower than the standby renewal frequency in the prior art.In the renewal frequency of mode of operation than renewal frequency height at standby.Higher mode of operation renewal frequency permits reducing with fast speeds because of connecting the chosen memory location data that reduces in abutting connection with word group capacitor discharge that line produces.Since standby is low in abutting connection with word group inversion frequency, coupling causes the memory location loss of charge little, and the renewal frequency of standby just can be lower.Be that higher renewal frequency makes the power consumption of mode of operation than prior art height during mode of operation between the starting period on the word group line of awaiting orders.Low renewal frequency at standby makes the power consumption of standby lower than prior art.By in the mode of operation because of higher renewal frequency is caused high power consumption, can offset than low power consumption by the low renewal frequency cause of awaiting orders.The decision of word group line startup situation is because word group line starts the poorest situation that the capacitive couplings that causes causes the memory location mistake in the work of connection adjacency.The desired higher renewal frequency of the poorest situation numerical value decision mode of operation of word group line.Flexible being characterised in that of the present invention allows the renewal frequency of mode of operation to change according to word group line startup situation, and allows the renewal frequency of standby to do opposite change according to word group line startup situation, so that the high power consumption of compensation work pattern.The rising requirements that compensate because of the mode of operation renewal frequency that can descend of the renewal frequency of standby to guarantee that power consumption can be by adequate compensation to meet design specification more.When needs upgraded, sensing amplifier was used to upgrade the memory body memory location.The operation of upgrading makes word group line activate in a job that repeats.
About detailed construction of the present invention, utilization principle, effect and effect, then please refer to the explanation that next adjoint does can be understood fully:
Description of drawings
Fig. 1 represents prior art dynamic memory body memory location and circuit subsystem thereof;
Fig. 2 represents that prior art is stored in memory body memory location voltage and how the accurate position of logic makes the word group line conversion of adjacency produce misoperation;
Fig. 3 represents that the present invention changes renewal frequency one specific embodiment arrangement of time figure;
Embodiment
Fig. 3 represents time arrangement figure, is used for explaining main specific embodiment of the present invention.Visible two update cycles 230,240 in mode of operation 210 among the figure, and two update cycles 250,260 in standby 220.Since two mode of operation update cycles 230,240 than more approaching two of standby, that is to say that renewal frequency in mode of operation is than the renewal frequency height at standby.The renewal frequency of normal operation mode is than the renewal frequency height at standby.Fig. 1 represents to be used for upgrading the mechanism of memory body memory location.Fig. 2 represents in this mechanism, the conversion noise that causes because of conversion of signals when the data that is stored in the memory body memory location at word group line 115, and produce the synoptic diagram of misoperation.The assorted mechanism of turning round of conversion is narrated as shown in Figure 2 and in the prior art in detail.Sensing amplifier 120 is used to upgrade or reduces the memory body memory location and becomes value correct or expection: logical one or " 0 ".For all memory body memory locations, need carry out the renewal operation in each some cycle that repeats work.In mode of operation, the renewal of memory body memory location is essential.Wherein mode of operation refer to the memory body memory location just in access as reading data from the memory body memory location or data being written to memory location the memory body.In addition, in the standby, the renewal of memory body memory location also is essential.Wherein standby refers to that the memory body memory location does not carry out access as reading data from the memory body memory location or the data that writes action such as memory location to the memory body.In standby, word group line 140 is an inactive state often, as shown in Figure 1.Memory body memory location renewal frequency at mode of operation and standby is an elite of the present invention.
Make comparisons with prior art, can be drawn a conclusion: the renewal frequency under the mode of operation of the present invention can be higher than the renewal frequency of prior art mode of operation.The renewal frequency of the present invention under standby can be lower than the renewal frequency of prior art standby.Mode of operation of the present invention has higher renewal frequency, reduces with fast speeds to allow because of connecting the chosen memory location data that reduces in abutting connection with word group capacitor discharge that line is produced, as shown in Figure 2.Under standby, this word group line be often be in idle.Since standby is low in abutting connection with word group inversion frequency, coupling causes the memory location loss of charge little, and then the renewal frequency at standby can be lower.
Mode of operation uses higher renewal frequency will cause the power consumption of mode of operation to be greater than prior art.This must be compensated by other local electric power that lowers by increasing mode of operation renewal frequency bring to the negative effect of memory body memory location confidence level improvement with data-integrity.This answer just is in standby, uses lower renewal frequency, the power consumption that makes standby is lower than the power consumption of the standby of prior art.The high power consumption that is caused by higher mode of operation renewal frequency among the present invention will be offseted by the low power consumption that the lower renewal frequency of standby produces.
The decision of word group line startup situation is because word group line starts the poorest situation that the capacitive couplings that causes causes the memory location mistake in the work of connection adjacency.In cycle preset time, the poorest situation decision of word group line conversion is by changing the not misoperation of access/memory body memory location that causes by neighborhood word group line as shown in Figure 2.The poorest startup situation determines successively by the desired higher renewal frequency of mode of operation.The inventive method and device comprise the adjustable feature of an elasticity: the renewal frequency that allows mode of operation is along with changing according to the poorest situation scheme of above-mentioned word group line conversion.
Allow too in the method and apparatus of the present invention that the standby renewal frequency can do opposite change according to the neighborhood word group line conversion startup situation of the above-mentioned high power consumption that is produced because of the higher renewal frequency of mode of operation in order to compensation.The renewal frequency of standby can descend more with the rising requirement of compensation because of the mode of operation renewal frequency.Can guarantee that so just power consumption can be by adequate compensation to meet design specification.
The invention has the advantages that the mode of operation that the dynamic memory gymnastics is done can the elasticity selection with the frequency of standby.The upper frequency of selecting or selecting in mode of operation allows the memory body deviser to increase the renewal frequency of mode of operation, avoids the interference of neighborhood word group line word group line with protection memory body memory location data.In addition, flexible renewal operation allows the renewal frequency of standby to descend to a certain degree with the rising as above-mentioned cooperating schema update frequency.Also allow simultaneously the power consumption of standby to descend with compensation because of in the higher power consumption of mode of operation.
The above only is a preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention, and is all according to equalization variation and modification that the present invention did, is all the contained lid of claim of the present invention.
The figure number explanation:
110-bit line 120-sensing amplifier
130-semiconductcor field effect electric crystal 140-word group line
150-signal 160-capacitor
170-ground connection 115-word group line n
125-word group line n+1 135,175-semiconductcor field effect electric crystal
136,176 bit line 145-signals
155,185-memory body memory location 165,195-ground connection
210-mode of operation 230,240-mode of operation update cycle
220-standby 250,260-standby update cycle
The WL word group line RFSH update cycle
Claims (34)
1. method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency includes following steps:
Provide than the higher renewal frequency of standby renewal frequency to mode of operation.
2. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: wherein this mode of operation renewal frequency is than the mode of operation renewal frequency height of prior art.
3. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: wherein this standby renewal frequency is lower than the standby renewal frequency of prior art.
4. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: wherein this mode of operation renewal frequency is than standby renewal frequency height.
5. the method that provides Dynamic Random Access Memory operation mode and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: wherein higher mode of operation renewal frequency permits reducing with fast speeds because of connecting the chosen memory location data that reduces in abutting connection with word group capacitor discharge that line produces.
6. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein the memory location loss of charge that caused of neighborhood word group conversion is less, and the standby renewal frequency can be lower.
7. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: wherein in the standby, this word group line often is in and does not start.
8. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein come highly in the power consumption of mode of operation than prior art because of higher mode of operation renewal frequency cause.
9. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein come lowly in the power consumption of standby than prior art because of low standby renewal frequency cause.
10. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein the high power consumption that caused of this higher mode of operation renewal frequency can be by because of offseting than low power consumption than hanging down the generation of standby renewal frequency.
11. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein the decision of word group line startup situation is because word group line starts the poorest situation that the capacitive couplings that causes causes the memory location mistake in the work of connection adjacency.
12. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: the poorest situation value decision mode of operation of word group line requires this higher renewal frequency.
13. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: allow the mode of operation renewal frequency to change according to the startup situation of word group line.
14. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: allow the standby renewal frequency to do opposite change according to changing the startup situation because of the word group line of the high power consumption of higher mode of operation in order to compensation.
15. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1, it is characterized in that: the wherein renewal frequency of the standby rising requirements that compensate because of the mode of operation renewal frequency that can descend more, to guarantee that power consumption can be by adequate compensation to meet design specification.
16. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein when needs upgrade, upgrade this memory body memory location with a sensing amplifier.
17. the method that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 1 is characterized in that: wherein in the work of each repetition, upgrade this word group line of operation activation.
18. one kind provide Dynamic Random Access Memory (dynamic random access memory, DRAM) mode of operation and standby upgrade the device of elasticity frequency, include:
One upgrades clock pulse (clock), wherein upper frequency is arranged in mode of operation (active mode) in than standby (standby mode).
19. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein this mode of operation renewal frequency is than the mode of operation renewal frequency height of prior art.
20. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein this standby renewal frequency is lower than the standby renewal frequency of prior art.
21. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein this mode of operation renewal frequency is than standby renewal frequency height.
22. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein higher mode of operation renewal frequency permits reducing with fast speeds because of connecting the chosen memory location data that reduces in abutting connection with word group capacitor discharge that line produces.
23. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein the memory location loss of charge that caused of neighborhood word group conversion is less, and the standby renewal frequency can be lower.
24. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: wherein in the standby, this word group line often is in and does not start.
25. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein come highly in the power consumption of mode of operation than prior art because of higher mode of operation renewal frequency cause.
26. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein come lowly in the power consumption of standby than prior art because of low standby renewal frequency cause.
27. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein the high power consumption that caused of this higher mode of operation renewal frequency can be by because of offseting than low power consumption than hanging down the generation of standby renewal frequency.
28. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein the decision of word group line startup situation is because word group line starts the poorest situation that the capacitive couplings that causes causes the memory location mistake in the work of connection adjacency.
29. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: the poorest startup situation decision mode of operation of word group line requires this higher renewal frequency.
30. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: allow the mode of operation renewal frequency to change according to the startup situation of word group line.
31. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: allow the standby renewal frequency to do opposite change according to changing the startup situation because of the word group line of the high power consumption of higher mode of operation in order to compensation.
32. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18, it is characterized in that: the wherein renewal frequency of the standby rising requirements that compensate because of the mode of operation renewal frequency that can descend more, to guarantee that power consumption can be by adequate compensation to meet design specification.
33. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein when needs upgrade, upgrade this memory body memory location with a sensing amplifier.
34. the device that provides Dynamic Random Access Memory mode of operation and standby to upgrade the elasticity frequency as claimed in claim 18 is characterized in that: wherein in the work of each repetition, upgrade this word group line of operation activation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03158924 CN1595530A (en) | 2003-09-10 | 2003-09-10 | DRAM updated structure capable of changing frequency elastically |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03158924 CN1595530A (en) | 2003-09-10 | 2003-09-10 | DRAM updated structure capable of changing frequency elastically |
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| CN1595530A true CN1595530A (en) | 2005-03-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295622A (en) * | 2012-03-05 | 2013-09-11 | 安凯(广州)微电子技术有限公司 | Frequency conversion method of dynamic random access memory (DRAM) |
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2003
- 2003-09-10 CN CN 03158924 patent/CN1595530A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295622A (en) * | 2012-03-05 | 2013-09-11 | 安凯(广州)微电子技术有限公司 | Frequency conversion method of dynamic random access memory (DRAM) |
| CN103295622B (en) * | 2012-03-05 | 2016-08-03 | 安凯(广州)微电子技术有限公司 | A kind of conversion method of dynamic random access memory |
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