CN1590599A - Silicon nono-wire and its preparation method - Google Patents
Silicon nono-wire and its preparation method Download PDFInfo
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- CN1590599A CN1590599A CN 03155931 CN03155931A CN1590599A CN 1590599 A CN1590599 A CN 1590599A CN 03155931 CN03155931 CN 03155931 CN 03155931 A CN03155931 A CN 03155931A CN 1590599 A CN1590599 A CN 1590599A
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Abstract
A silicon nano-wire composed of monocrystal silicon core and non-crystal oxide shell is perpared through proportionally mixing high-purity Si powder and SiO2 powder, stirring, pressing to become sheet, putting it in vacuum crucible of ultrahigh-vacuum electronic beam system, ultrasonic washing of SiO2/Si as substrate by acetone or methanol solution, drying by blwing N2, putting it in prevacuumizing chamber, vacuumizing, transferring the substrate in main vacuum chamber, heating to 650-750 deg.C, evaporating Si+SiO2 source in crucible by electronic beam to deposite it on the substrate, and cooling.
Description
Technical field
The present invention relates to a kind of nano material and preparation method thereof, particularly a kind of silicon nanowires and preparation method thereof.
Background technology
Monodimension nanometer material is the significant components of following nanometer electronic device and opto-electronic device, in academic research and application and development field good prospect is arranged all.Silicon nanowires is the important monodimension nanometer material of a class.At present, the method for preparing silicon nanowires mainly contains: thermal evaporation (thermal evaporation), chemical Vapor deposition process (CVD) and laser ablation method (laser ablation) etc.In these methods, the preparation of silicon nanowires generally is in normal atmosphere or rough vacuum (background pressure 〉=10
-2Mbar), carry out under 850 ℃～1200 ℃ the growth temperature condition, the growing environment under this condition has limited the further improvement of silicon nanowires product quality and performances, and brings many uncertain factors for the microscopic growth Study on Mechanism.
Summary of the invention
The purpose of this invention is to provide a kind of silicon nanowires and preparation method thereof.
Silicon nanowires of the present invention is that the single crystal silicon core of 9～13nm and the thickness that is wrapped in the outside are that the amorphous oxides shell of 5～9nm is formed by diameter.
Described single crystal silicon core is made up of (110) and (111) crystal face that interplanar distance is respectively 0.19nm and 0.31nm.
The growth orientation of described silicon single crystal nuclear is mainly [22 1].
Described amorphous oxides shell is silicon oxide and silica shell.
A kind of preparation method of silicon nanowires comprises:
(1) evaporation is with the preparation in silicon source: with purity is that 99.99% silicon (Si) powder and purity are 99.99% silicon-dioxide (SiO
2) powder, be to be configured at 1: 1 to stir evenly by weight proportion, use tabletting machine Si+SiO then
2The powder tablet forming is placed in the source crucible of ultrahigh vacuum(HHV) electron beam system and vacuumizes, and is standby;
(2) preparation of silicon nanowires growth substrates: select 100～600nm SiO for use
2/ Si (111) or SiO
2As the growth substrates of silicon nanowires, successively use analytical pure acetone and methanol solution to growth substrates difference ultrasonic cleaning 5 minutes, after drying up with nitrogen again, put into the prechamber of ultrahigh vacuum(HHV) electron beam system, vacuumize;
(3) growth of silicon nanowires: when the pressure of prechamber reaches 1 * 10
-7Behind the mbar, SiO
2/ Si (111) or SiO
2Substrate passes in the main vacuum chamber of ultrahigh vacuum(HHV) electron beam system, is heated to 650～750 ℃, behind the temperature-stable, and the Si+SiO in the crucible of deposited by electron beam evaporation source again
2The source is evaporated silicon, and at SiO
2/ Si (111) or SiO
2Deposition growing on the substrate;
(4) after main vacuum chamber is cooled to room temperature, substrate is taken out from main vacuum chamber,, be the one dimension silicon nanowires at uniform pewter of substrate surface or yellow film.
Under above-mentioned UHV condition in the preparation silicon nanowires method, when the pressure of prechamber reaches 1 * 10
-7Behind the mbar, SiO
2/ Si (111) or SiO
2When substrate passed in the main vacuum chamber of ultrahigh vacuum(HHV) electron beam system, the background pressure of main vacuum chamber was 2 * 10
-10Mbar.The electron beam evaporation condition is: the acceleration voltage of electron beam is 7kV; Transmitter current is 220mA; Vaporator rate is 0.02nm/s; Evaporation time is 7～10 minutes.Silicon nanowires is preferably 700 ℃ in the growth temperature of electron beam main vacuum chamber.
The inventive method adopts the electron beam evaporation system in order to produce the required silicon source of silicon nanowires growth, utilizes 7kV beam bombardment evaporation Si+SiO
2Large-area silicon nanowires can be prepared in the source under 700 ℃ temperature.The preparation of monodimension nanometer material keeps suitably and the isostatic temperature also is the key point that can monodimension nanometer material grow except needing suitable source material.Because if the envrionment temperature of growth is inhomogeneous, higher thermograde will stop the growth of monodimension nanometer material.The present invention combines thermostatic control with the electron beam evaporation system, successfully prepare the silicon nanowires of large-area high quality and performance under the condition of ultrahigh vacuum(HHV).The present invention has developed the new purposes of electron beam evaporation technique, the novel method of mass preparation silicon nanowires under a kind of UHV condition is provided, utilize similar approach to obtain monodimension nanometer material more, unique properties probably, for new thinking has been opened up in the research of monodimension nanometer material, help obtaining the higher monodimension nanometer material product of purity, and significant to the growth mechanism of further investigation monodimension nanometer material.
Description of drawings
Fig. 1 is an equipment configuration synoptic diagram of implementing the inventive method
Fig. 2 is the Photomicrograph that adopts the scanning electronic microscope check silicon nanowires of the present invention of different multiples
Fig. 3 is the Photomicrograph that adopts the single silicon nanowires of transmission electron microscope check the present invention
Fig. 4 is the Photomicrograph that adopts the middle nucleus of the single silicon nanowires of high resolution transmission electron microscopy check the present invention
Fig. 5 is the Photomicrograph that adopts the single silicon nanowires result of high resolution transmission electron microscopy check the present invention
Fig. 6 is the X-ray diffractogram of silicon nanowires of the present invention
Fig. 7 is the x-ray photoelectron spectroscopy figure (XPS Si 2p spectrogram) of silicon nanowires of the present invention
Embodiment
The required equipment of specific implementation process of the present invention comprises that (Switzerland BALZERS ULS 400 systems, the background pressure of main vacuum chamber is 2 * 10 in full-automatic ultra vacuum electron beam evaporation system
-10Mbar) and the resistance-type thermostatic control system.Equipment configuration comprises the prechamber 1 of ultrahigh vacuum(HHV) electron beam system (ULS 400) as shown in Figure 1; The main vacuum chamber 2 of ULS400 system; Sample 3; The heating unit 4 of ULS 400 system configuration; The controlled heat shielding cover (thermostatic control system) 5 that adds of resistance-type; Evaporation source crucible (Si+SiO
2The source) 6; Electron beam gun 7; Thickness and vaporator rate controller 8; Quadrupole mass spectrometer 9; ULS 400 systems temperature control and sample swivel arrangement 10.
The concrete grammar of preparation silicon nanowires is:
(1) evaporation is with the preparation in silicon source: with purity is that 99.99% silicon (Si) powder and purity are 99.99% silicon-dioxide (SiO
2) powder, be to be configured and to stir evenly at 1: 1 by weight proportion, use common tabletting machine Si+SiO then
2The powder tablet forming is placed in the source crucible 6 of ultrahigh vacuum(HHV) electron beam system and vacuumizes, and is standby.
(2) preparation of silicon line growth substrates: select 100nm SiO for use
2/ Si (111) uses analytical pure acetone and methanol solution to growth substrates ultrasonic cleaning 5 minutes respectively as the growth substrates of silicon nanowires, after drying up with high pure nitrogen, puts into the prechamber 1 of ultrahigh vacuum(HHV) electron beam system immediately again, vacuumizes.
(3) growth of silicon line: when the pressure of prechamber 1 reaches 1 * 10
-7Behind the mbar, SiO
2/ Si (111) substrate passes to main vacuum chamber 2, and (background pressure is 2 * 10
-10Mbar) in, elder generation heats jointly with the heating unit 4 that the resistance-type program controlled adds heat shielding cover 5 (thermostatic control systems) and ULS 400 system configuration, makes the temperature of growth district reach 700 ℃, behind the temperature-stable, and the Si+SiO in the deposited by electron beam evaporation source crucible 6
2The source is evaporated silicon, and the acceleration voltage of electron beam is 7kV; Transmitter current is 220mA; Vaporator rate is 0.02nm/s, at SiO
2Deposition growing is 8 minutes on/Si (111) substrate.
(4) main vacuum chamber 2 is cooled to room temperature, then, substrate is taken out from main vacuum chamber 2, and finding has large-area uniform pewter film to generate on the surface of substrate, is the one dimension silicon nanowires.
Through following methods analyst, provable employing preparation method of the present invention can prepare the one dimension silicon nanowires in a large number.
Adopt preparation method of the present invention, the one dimension silicon nanowires of preparing is through the scanning electronic microscope check of different multiples, as shown in Figure 2, the result shows has a large amount of one-dimensional nano lines to generate, and its length is 1～4 μ m, analyzes in different zones and all obtains similar image; Single silicon nanowires is checked through transmission electron microscope, and as shown in Figure 3, the result shows its one dimension silicon nanowires by intermediary monocrystalline attitude nuclear core (the about 10nm of diameter), and (thickness about 5～9nm) is formed to reach the amorphous oxides shell that coated outside; The nuclear core of single silicon nanowires is checked through high resolution transmission electron microscopy, and as shown in Figure 4, the result shows that intermediary monocrystalline attitude nuclear core is made up of (110) and (111) lattice plane that interplanar distance is respectively 0.19nm and 0.31nm; Single silicon nanowires is checked through high resolution transmission electron microscopy, as shown in Figure 5, the result shows that the direction of growth of this silicon nanowires and the angle in [110] and [111] crystal orientation are respectively 19 degree and 54 degree, this illustrates that the direction of growth of this silicon nanowires is [22 1], the illustration in the upper right corner is the electron-diffraction diagram of prepared silicon nanowires among Fig. 5, has shown the main family of crystal planes of silicon nanowires; As shown in Figure 6, the X-ray diffractogram of prepared silicon nanowires further proves the family of crystal planes of silicon nanowires; As shown in Figure 7, the x-ray photoelectron spectroscopy figure of prepared silicon nanowires (XPS Si 2p spectrogram) proves that prepared silicon nanowires includes pure Si nuclear, and SiO and SiO
2The oxide compound shell.
Claims (8)
1, a kind of silicon nanowires is that the single crystal silicon core of 9～13nm and the thickness that is wrapped in the outside are that the amorphous oxides shell of 5～9nm is formed by diameter.
2, silicon nanowires according to claim 1 is characterized in that: described single crystal silicon core is made up of (110) and (111) crystal face that interplanar distance is respectively 0.19nm and 0.31nm.
3, silicon nanowires according to claim 1 is characterized in that: the growth orientation of described silicon single crystal nuclear is mainly [221].
4, silicon nanowires according to claim 1 is characterized in that: described amorphous oxides shell is silicon oxide and silica shell.
5, a kind of preparation method of silicon nanowires comprises:
(1) evaporation is with the preparation in silicon source: with purity is that 99.99% silicon (Si) powder and purity are 99.99% silicon-dioxide (SiO
2) powder, be to be configured at 1: 1 to stir evenly by weight proportion, use tabletting machine Si+SiO then
2The powder tablet forming is placed in the source crucible of ultrahigh vacuum(HHV) electron beam system and vacuumizes, and is standby;
(2) preparation of silicon nanowires growth substrates: select 100～600nm SiO for use
2/ Si (111) or SiO
2As the growth substrates of silicon nanowires, successively use analytical pure acetone and methanol solution to growth substrates difference ultrasonic cleaning 5 minutes, after drying up with nitrogen again, put into the prechamber of ultrahigh vacuum(HHV) electron beam system, vacuumize;
(3) growth of silicon nanowires: when the pressure of prechamber reaches 1 * 10
-7Behind the mbar, SiO
2/ Si (111) or SiO
2Substrate passes in the main vacuum chamber of ultrahigh vacuum(HHV) electron beam system, is heated to 650～750 ℃, behind the temperature-stable, and the Si+SiO in the crucible of deposited by electron beam evaporation source again
2The source is evaporated silicon, and at SiO
2/ Si (111) or SiO
2Deposition growing on the substrate;
(4) after main vacuum chamber is cooled to room temperature, substrate is taken out from main vacuum chamber,, be the one dimension silicon nanowires at uniform pewter of substrate surface or yellow film.
6, the preparation method of silicon nanowires according to claim 5 is characterized in that: described pressure when prechamber reaches 1 * 10
-7Behind the mbar, SiO
2/ Si (111) or SiO
2When substrate passed in the main vacuum chamber of ultrahigh vacuum(HHV) electron beam system, the background pressure of main vacuum chamber was 2 * 10
-10Mbar.
7, the preparation method of silicon nanowires according to claim 5 is characterized in that: the acceleration voltage of electron beam is 7kV; Transmitter current is 220mA; Vaporator rate is 0.02nm/s; Evaporation time is 7～10 minutes.
8, the preparation method of silicon nanowires according to claim 5 is characterized in that: described silicon nanowires is 700 ℃ in the growth temperature of electron beam main vacuum chamber.
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| CN 03155931 CN1262692C (en) | 2003-08-27 | 2003-08-27 | Silicon nono-wire and its preparation method |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1312034C (en) * | 2005-05-20 | 2007-04-25 | 清华大学 | Process for preparing monocrystalline silicon nano line array with single axial arranging |
| CN100564257C (en) * | 2008-02-03 | 2009-12-02 | 山东大学 | The preparation technology of a kind of nano-tube and nano wire |
| CN101399167B (en) * | 2008-07-15 | 2010-04-14 | 北方工业大学 | Method for assembling silicon nano-wire |
| CN101509123B (en) * | 2009-02-24 | 2010-09-08 | 南京大学 | Method for producing small-sized tin indium oxide nano-wire material in low-temperature |
| CN102071397A (en) * | 2011-01-18 | 2011-05-25 | 浙江理工大学 | Method for preparing cadmium sulfide nanometer wire |
| CN101563801B (en) * | 2005-11-21 | 2013-03-27 | 纳米系统公司 | Nanowire structures comprising carbon |
| CN103950932A (en) * | 2014-04-16 | 2014-07-30 | 奇瑞汽车股份有限公司 | Preparation method of high-purity orderly semiconductor silicon nanowire |
| CN105798447A (en) * | 2016-04-12 | 2016-07-27 | 苏州大学 | Method for preparing metal nanowires through nanometer interconnection and application thereof |
| CN106587068A (en) * | 2016-12-12 | 2017-04-26 | 陕西科技大学 | Method for preparing single Si nanowire by virtue of tin dioxide |
| CN115036496A (en) * | 2021-03-05 | 2022-09-09 | 中国科学院过程工程研究所 | Silicon nanowire-based flexible self-supporting electrode material and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1312034C (en) * | 2005-05-20 | 2007-04-25 | 清华大学 | Process for preparing monocrystalline silicon nano line array with single axial arranging |
| CN101563801B (en) * | 2005-11-21 | 2013-03-27 | 纳米系统公司 | Nanowire structures comprising carbon |
| CN100564257C (en) * | 2008-02-03 | 2009-12-02 | 山东大学 | The preparation technology of a kind of nano-tube and nano wire |
| CN101399167B (en) * | 2008-07-15 | 2010-04-14 | 北方工业大学 | Method for assembling silicon nano-wire |
| CN101509123B (en) * | 2009-02-24 | 2010-09-08 | 南京大学 | Method for producing small-sized tin indium oxide nano-wire material in low-temperature |
| CN102071397B (en) * | 2011-01-18 | 2012-07-04 | 浙江理工大学 | Method for preparing cadmium sulfide nanometer wire |
| CN102071397A (en) * | 2011-01-18 | 2011-05-25 | 浙江理工大学 | Method for preparing cadmium sulfide nanometer wire |
| CN103950932A (en) * | 2014-04-16 | 2014-07-30 | 奇瑞汽车股份有限公司 | Preparation method of high-purity orderly semiconductor silicon nanowire |
| CN105798447A (en) * | 2016-04-12 | 2016-07-27 | 苏州大学 | Method for preparing metal nanowires through nanometer interconnection and application thereof |
| CN105798447B (en) * | 2016-04-12 | 2018-06-29 | 苏州大学 | A kind of method and its application that metal nanometer line is prepared using nanometer interconnection |
| CN106587068A (en) * | 2016-12-12 | 2017-04-26 | 陕西科技大学 | Method for preparing single Si nanowire by virtue of tin dioxide |
| CN115036496A (en) * | 2021-03-05 | 2022-09-09 | 中国科学院过程工程研究所 | Silicon nanowire-based flexible self-supporting electrode material and preparation method thereof |
| CN115036496B (en) * | 2021-03-05 | 2024-02-13 | 中国科学院过程工程研究所 | Silicon nanowire-based flexible self-supporting electrode material and preparation method thereof |
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