CN1590582A - Method of lowering residual fluorind in sedimentation reaction chamber cavity body - Google Patents
Method of lowering residual fluorind in sedimentation reaction chamber cavity body Download PDFInfo
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- CN1590582A CN1590582A CN 03155693 CN03155693A CN1590582A CN 1590582 A CN1590582 A CN 1590582A CN 03155693 CN03155693 CN 03155693 CN 03155693 A CN03155693 A CN 03155693A CN 1590582 A CN1590582 A CN 1590582A
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Abstract
A process for decreasing the residual fluorine in depositing reaction cavity includes such steps as providing a depositing reactor which is composed of depositing reaction cavity, far-end plasma generator and RF power generator, introducing F-contained gas to said plasma generator for generating F-contained plasma, guiding it into depositing reaction cavity, introducing H2-contained gas to said plasma generator for generating hydrogen-contained plasma guiding it into depositing reaction cavity, and turning on RF power generator.
Description
Technical field that the present invention belongs to
The present invention relates to a kind of method of clean deposition reaction chamber residue, be particularly related to a kind ofly after utilizing fluoro-gas electricity slurry to remove the dirt settling of cvd reactive chamber, utilize radio frequency power generator and far-end electricity slurry generator to produce hydrogen-containing gas electricity slurry simultaneously to remove the residual method of fluorion.
Background technology
In substrate, form in the step of structural sheet, chemical Vapor deposition process (chemical vapordeposition, CVD) be a kind of method that often is used, after substrate carried out deposition reaction, structural sheet promptly can be formed on the surface of substrate, and sedimentary speed can raise and accelerates along with the indoor temperature of deposition reaction, and thickness of structure can be carried out the time and thickens along with sedimentary.Yet because the cause that the temperature on the cavity of cvd reactive chamber (chamber) surface can raise along with the indoor temperature of deposition reaction, the housing surface of cvd reactive chamber also can be deposited a structural sheet.
Below, the step of especially utilizing plasma enhanced chemical vapor deposition method conformability in substrate to form silicon dioxide layer describes for example.
Please refer to Fig. 1, Fig. 1 shows known deposition reaction device.The deposition reaction device comprises cvd reactive chamber cavity 101, radio frequency (RF) power generator, far-end electricity slurry generator (remote plasma sourcecleaing), reaches off-gas pump (pump).Have top electrode 102, lower electrode 103 in the cvd reactive chamber cavity 101, reach bracing frame 104, lower electrode 103 places on the bracing frame 104.(radiation frequency, RF) the power generator is controlled, and the radio frequency power generator is connected with lead respectively with top electrode 102 and 103 of lower electrodes by radio frequency for top electrode 102 and lower electrode 103.Far-end electricity slurry generator is connected with cvd reactive chamber cavity 101 with hollow pipeline 105, and hollow pipeline 105 is in order in the electricity slurry input cvd reactive chamber cavity 101 that far-end electricity slurry generator is produced.Off-gas pump is connected with cvd reactive chamber cavity 101 with the hollow pipeline, in order to the gas in cvd reactive chamber cavity 101 chambeies is extracted out.Reactant gases is fed cvd reactive chamber cavity 101, open the radio frequency power generator again and make reactant gases form the electricity slurry by radio frequency.
At first, before putting into substrate, utilize film forming with siliceous process gas as precursor (precursor), earlier under the situation of no substrate, in cvd reactive chamber cavity 101, carry out plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition one time, PECVD) step, form settled layer with inner cavity surface at cvd reactive chamber cavity 101, the part pollutent that settled layer can completely cut off in the successive process and be produced pollutes to reduce, and this step promptly is called preceding deposition step (pre-deposition).
Then, substrate is placed on the lower electrode 103 in the cvd reactive chamber cavity 101, and with film forming with siliceous process gas as precursor, in cvd reactive chamber cavity 101, carry out the plasma enhanced chemical vapor deposition step, in substrate, to form the layer of silicon dioxide layer.In the process of deposition of silica, silicon-dioxide except meeting on the wafer deposition, also can on the inner cavity surface of cvd reactive chamber cavity 101 or the part in it, deposit.These unwanted deposition residues can become the source of particulate, and cause follow-up sedimentary wafer defectiveness.Therefore, after in substrate auto-deposition reactor chamber 101, removing, be necessary to do the work of routine cleaning for cvd reactive chamber.
The method of cleaning reaction chamber can be divided into the wet etching cleaning and (in situ cleaning is cleaned in the original place; Claim dry etching to clean again) two kinds.Carry out the wet etching cleaning and must make the reaction chamber vacuum breaker, dissolve deposition residues with solvent.Dry etching is cleaned and is the purging method that often is used at present, and reaction chamber does not need vacuum breaker, and the electricity slurry that typically uses purge gas comes and the residue reaction.
The method that dry etching is cleaned mainly is to utilize fluoro-gas as purge gas, is generally fluorine carbide gas (fluorocarbon gas) as tetrafluoromethane (CF
4) or hexafluoroethylene (C
2F
6), or the present general purge gas nitrogen trifluoride (NF of use of industry institute
3), be conveyed in the cvd reactive chamber cavity 101, and start the radio frequency power generator forming fluorion electricity slurry, to allow the inner cavity surface of fluorion and cvd reactive chamber cavity 101 and the dirt settling on the interior part thereof react, and with off-gas pump gas is extracted out, to improve the problem of deposition residues.In order to promote the efficient that dry etching is cleaned, extensively utilize far-end electricity slurry generator will form the electricity slurry at present, and import in the cvd reactive chamber cavity 101, to use high-level efficiency electricity slurry clean deposition reactor chamber 101 as the fluoro-gas of purge gas.
Though when utilizing nitrogen trifluoride to come cvd reactive chamber cavity 101 carried out dry etching and clean as purge gas, fluorion can effectively remove in the plasma enhanced chemical vapor deposition step residual deposition residues, but the fluorion that carries out the dry etching cleaning can residue in the cvd reactive chamber cavity 101 and form fluorine-containing residue 106 in the hollow pipeline 105 that links to each other, and can pollute successive process.
Therefore after the dry etching cleaning step, with hydrogen-containing gas such as hydrogen (H
2) be delivered in the cvd reactive chamber cavity 101 as reactant gases, and start the radio frequency power generator to form hydrogen ion electricity slurry, to allow residual effective combination of fluorion in hydrogen ion and cvd reactive chamber cavity 101 chambeies, and with off-gas pump gas is extracted out, to reduce the pollution of fluorion to successive process.
Utilize the radio frequency power generator to dissociate because be at present as the hydrogen of reactant gases, to form hydrogen ion electricity slurry, and riddle in the cvd reactive chamber cavity 101, hydrogen ion electricity slurry is fully combined with fluorion reduce fluorion and residue in the cavity, but, utilizing far-end electricity slurry generator will form the electricity slurry as the fluoro-gas of purge gas, and it is the electricity slurry is interior with in the steps of using high-level efficiency electricity slurry clean deposition reactor chamber 101 by hollow pipeline 105 importing cvd reactive chamber cavitys 101, pipeline surface in the hollow pipeline 105 also has fluorion and exists, but the hydrogen ion electricity slurry that but can't be formed by the radio frequency power generator is removed, cause having fluorion residual in the hollow pipeline 105, thus, will produce successive process and pollute, reduce except influencing process conditions the processing procedure stability, also drop in the possibility auto-deposition reaction chamber and in substrate, cause the defective that to save, for example gate line short circuit.The byproduct (by-product) that is produced when therefore, removing deposition step and cleaning seems quite important.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of by using radio frequency power generator and far-end electricity slurry generator to produce hydrogen-containing gas electricity slurry simultaneously to reduce the method for fluorine residue in the cvd reactive chamber cavity.
According to above-mentioned purpose, the invention provides a kind of method that reduces fluorine residue in the cvd reactive chamber cavity, comprise the following steps: that (a) provides the deposition reaction device, the deposition reaction device comprises cvd reactive chamber cavity, far-end electricity slurry generator, and far-end electricity slurry generator couples with pipeline and cvd reactive chamber cavity; (b) feed fluoro-gas to far-end electricity slurry generator, and start far-end electricity slurry generator producing fluorine-containing electricity slurry, and import fluorine-containing electricity via pipeline from far-end electricity slurry generator and starch to the cvd reactive chamber cavity; And (c) feed hydrogen-containing gas to far-end electricity slurry generator, and start far-end electricity slurry generator producing hydrogeneous electricity slurry, and import hydrogeneous electricity via pipeline from far-end electricity slurry generator and starch to the cvd reactive chamber cavity.
According to above-mentioned purpose, the present invention provides a kind of method that reduces fluorine residue in the cvd reactive chamber cavity again, comprise the following steps: that (a) provides the deposition reaction device, the deposition reaction device comprises cvd reactive chamber cavity with bracing frame, far-end electricity slurry generator, radio frequency power generator, and off-gas pump, far-end electricity slurry generator couples with first pipeline and cvd reactive chamber cavity, radio frequency power generator and cvd reactive chamber cavity electric property coupling, and off-gas pump couples with second pipeline and cvd reactive chamber cavity; (b) in the cvd reactive chamber cavity, carry out first time deposition step so that intravital surface forms first settled layer in the cvd reactive chamber chamber; (c) provide substrate, substrate is positioned on the bracing frame, and the deposition step second time is carried out in substrate, to form second settled layer at substrate surface; (d) shift out substrate after, feed fluoro-gas to far-end electricity slurry generator, and start far-end electricity slurry generator producing fluorine-containing electricity slurry, and via first pipeline from far-end electricity slurry generator import fluorine-containing electricity starch to the cvd reactive chamber cavity to carry out cleaning first time; Reach and (e) feed hydrogen-containing gas to far-end electricity slurry generator, and start far-end electricity slurry generator to produce hydrogeneous electricity slurry, and import hydrogeneous electricity via first pipeline from far-end electricity slurry generator and starch to the cvd reactive chamber cavity, start the radio frequency power generator simultaneously, clean the cvd reactive chamber cavity is carried out the second time.
The diagram simple declaration
Fig. 1 shows known deposition reaction device.
Fig. 2 shows deposition reaction device of the present invention.
Fig. 3 is the schema that shows the method for fluorine residue in the reduction cvd reactive chamber cavity provided by the present invention.
Nomenclature
101,201～cvd reactive chamber cavity;
102,202～top electrode;
103,203～lower electrode;
104,204～bracing frame;
105,205～hollow pipeline;
106～fluorine-containing residue.
Embodiment
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended diagram, be described in detail below:
Please also refer to Fig. 2 and Fig. 3, Fig. 2 shows deposition reaction device of the present invention; Fig. 3 is the schema that shows the method for fluorine residue in the reduction cvd reactive chamber cavity provided by the present invention.
The deposition reaction device comprises cvd reactive chamber cavity 201, radio frequency (RF) power generator, far-end electricity slurry generator, reaches off-gas pump.Have top electrode 202, lower electrode 203 in the cvd reactive chamber cavity 201, reach bracing frame 204, lower electrode 203 places on the bracing frame 204.Top electrode 202 and lower electrode 203 are controlled by the radio frequency power generator, and the radio frequency power generator is connected with lead respectively with top electrode 202 and 203 of lower electrodes.Far-end electricity slurry generator is connected with cvd reactive chamber cavity 201 with hollow pipeline 205, and hollow pipeline 205 is in order in the electricity slurry input cvd reactive chamber cavity 201 that far-end electricity slurry generator is produced.Off-gas pump is connected with cvd reactive chamber cavity 201 with the hollow pipeline, in order to the gas in cvd reactive chamber cavity 201 chambeies is extracted out.Reactant gases is fed cvd reactive chamber cavity 201, open the radio frequency power generator again and make reactant gases form the electricity slurry by radio frequency.
Below, the step of especially utilizing plasma enhanced chemical vapor deposition method conformability in substrate to form silicon dioxide layer describes for example.
Step s301, at first, before putting into substrate, utilize the siliceous process gas of film forming, for example be positive tetraethyl orthosilicate (tetra ethyl ortho silicate, TEOS) as precursor, earlier in cvd reactive chamber cavity 201, carrying out one time the plasma enhanced chemical vapor deposition step under the situation of no substrate, form settled layer with inner cavity surface at cvd reactive chamber cavity 201, the part pollutent that settled layer can completely cut off in the successive process and be produced pollutes to reduce, and this step promptly is called preceding deposition step.
Step s302, then, substrate is placed on the lower electrode 203 in the cvd reactive chamber cavity 201, and with film forming with siliceous process gas as precursor, in cvd reactive chamber cavity 201, carry out the plasma enhanced chemical vapor deposition step, in substrate, to form the layer of silicon dioxide layer.In the process of deposition of silica, silicon-dioxide except meeting on the wafer deposition, also can on the inner cavity surface of cvd reactive chamber cavity 201 or the part in it, deposit.These unwanted deposition residues can become the source of particulate, and cause follow-up sedimentary wafer defectiveness.Therefore, after in substrate auto-deposition reactor chamber 201, removing, be necessary to do the work of routine cleaning for cvd reactive chamber.
Step s303 will shift out in the substrate auto-deposition reactor chamber 201.
Step s304 carries out the first time to cvd reactive chamber cavity 201 and cleans.
The method of clean deposition reaction chamber can be divided into the wet etching cleaning and the original place is cleaned two kinds.Carry out the wet etching cleaning and must make the reaction chamber vacuum breaker, dissolve deposition residues with solvent.Dry etching is cleaned and is the purging method that often is used at present, and reaction chamber does not need vacuum breaker, and the electricity slurry that typically uses purge gas comes and the residue reaction.
The method that dry etching is cleaned mainly is to utilize fluoro-gas as purge gas, is generally fluorine carbide gas such as tetrafluoromethane (CF
4) or hexafluoroethylene (C
2F
6), or the present general purge gas nitrogen trifluoride (NF of use of industry institute
3), be conveyed in the cvd reactive chamber cavity 201, and start the radio frequency power generator forming fluorion electricity slurry, to allow the inner cavity surface of fluorion and cvd reactive chamber cavity 201 and the dirt settling on the interior part thereof react, and with off-gas pump gas is extracted out, to improve the problem of deposition residues.
In order to promote the efficient that dry etching is cleaned, extensively utilize far-end electricity slurry generator will form the electricity slurry at present, and import in the cvd reactive chamber cavity 201, to use high-level efficiency electricity slurry clean deposition reactor chamber 201 as the fluoro-gas of purge gas.
Because when utilizing nitrogen trifluoride to come cvd reactive chamber cavity 201 carried out dry etching and clean as purge gas, fluorion can effectively remove in the plasma enhanced chemical vapor deposition step residual deposition residues, but the fluorion that carries out the dry etching cleaning can residue in the cvd reactive chamber cavity 201 and form residue 106 in the hollow pipeline 205 that links to each other, and can pollute successive process.
Next, carry out characterization step of the present invention.
Step s305 carries out the second time to cvd reactive chamber cavity 201 and cleans.
After the dry etching cleaning step, far-end electricity slurry generator will be as 100 to 10000SCCM hydrogen-containing gas such as hydrogen (H of purge gas
2) form hydrogeneous electricity slurry and be delivered in the cvd reactive chamber cavity 201, allowing in hydrogen ion and cvd reactive chamber cavity 201 chambeies and residual effective combinations of fluorion in the hollow pipeline 205, and gas is extracted out, with of the pollution of reduction fluorion successive process with off-gas pump.Because 201 of far-end electricity slurry generator and cvd reactive chamber cavitys couple with hollow pipeline 205, in this section course of conveying, hydrogeneous electricity slurry forms hydrogen carrying out keying action easily again, cause the concentration of hydrogeneous electricity slurry to reduce, therefore after hydrogeneous electricity slurry is imported cvd reactive chamber cavity 201, and start the radio frequency power generator so that hydrogen fully forms hydrogeneous electricity slurry, to allow residual effective combination of fluorion in hydrogen ion and cvd reactive chamber cavity 201 chambeies.
According to method provided by the present invention, can effectively remove reaching hollow pipeline 205 interior residual fluorions in the cvd reactive chamber cavity 201, can avoid that the residual situation of fluorion is arranged in the hollow pipeline 205, can prevent to produce situation about polluting in successive process, therefore the cause that can not be affected because of process conditions and reduce processing procedure stability, also can avoid the indoor generation residue of deposition reaction to drop and in substrate, cause the problems such as defective that to save, can effectively guarantee the quality that produces.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; to those skilled in the art; in not breaking away from design of the present invention and scope; when can doing to change and retouching, so protection scope of the present invention should be looked appended the claim person of defining and is as the criterion.
Claims (10)
1. a method that reduces fluorine residue in the cvd reactive chamber cavity comprises the following steps:
(a) provide the deposition reaction device, this deposition reaction device comprises cvd reactive chamber cavity, far-end electricity slurry generator, and this far-end electricity slurry generator couples with pipeline and this cvd reactive chamber cavity;
(b) feed fluoro-gas to this far-end electricity slurry generator, and start this far-end electricity slurry generator producing fluorine-containing electricity slurry, and import and to starch to this cvd reactive chamber cavity by fluorine-containing electricity from this far-end electricity slurry generator via this pipeline; And
(c) feed hydrogen-containing gas to this far-end electricity slurry generator, and start this far-end electricity slurry generator producing hydrogeneous electricity slurry, and import and to starch to this cvd reactive chamber cavity by hydrogeneous electricity from this far-end electricity slurry generator via this pipeline.
2. the method for fluorine residue wherein further comprises the radio frequency power generator in this cvd reactive chamber cavity in the reduction cvd reactive chamber cavity as claimed in claim 1.
3. the method for fluorine residue wherein further comprises top electrode and lower electrode in this cvd reactive chamber cavity in the reduction cvd reactive chamber cavity as claimed in claim 2, and this top electrode and this lower electrode couple with this radio frequency power generator respectively.
4. the method for fluorine residue wherein further comprises in (c) step starting this radio frequency power generator simultaneously in the reduction cvd reactive chamber cavity as claimed in claim 2.
5. the method for fluorine residue in the reduction cvd reactive chamber cavity as claimed in claim 1, wherein this deposition reaction device further comprises off-gas pump, this off-gas pump is extracted the intravital gas in this cvd reactive chamber chamber out.
6. the method for fluorine residue in the reduction cvd reactive chamber cavity as claimed in claim 1, wherein this fluoro-gas is the mixed gas of tetrafluoromethane, hexafluoroethylene, nitrogen trifluoride or above-mentioned gas.
7. the method for fluorine residue in the reduction cvd reactive chamber cavity as claimed in claim 1, wherein this hydrogen-containing gas is a hydrogen.
8. a method that reduces fluorine residue in the cvd reactive chamber cavity comprises the following steps:
(a) provide the deposition reaction device, this deposition reaction device comprises cvd reactive chamber cavity with bracing frame, far-end electricity slurry generator, radio frequency power generator, and off-gas pump, this far-end electricity slurry generator couples with first pipeline and this cvd reactive chamber cavity, this radio frequency power generator and this cvd reactive chamber cavity electric property coupling, and this off-gas pump couples with second pipeline and this cvd reactive chamber cavity;
(b) in this cvd reactive chamber cavity, carry out first time deposition step so that intravital surface forms first settled layer in this cvd reactive chamber chamber;
(c) provide substrate, this substrate is positioned on this bracing frame, and the deposition step second time is carried out in this substrate, to form second settled layer at this substrate surface;
(d) shift out this substrate after, feed fluoro-gas to this far-end electricity slurry generator, and start this far-end electricity slurry generator producing fluorine-containing electricity slurry, and via this first pipeline from this far-end electricity slurry generator import should fluorine-containing electricity slurry to this cvd reactive chamber cavity to carry out the cleaning first time; And
(e) feed hydrogen-containing gas to this far-end electricity slurry generator, and start this far-end electricity slurry generator to produce hydrogeneous electricity slurry, and starch this hydrogeneous electricity of generator importing via this first pipeline from this far-end electricity and starch to this cvd reactive chamber cavity, start this radio frequency power generator simultaneously, clean this cvd reactive chamber cavity is carried out the second time.
9. the method for fluorine residue in the reduction cvd reactive chamber cavity as claimed in claim 8, wherein this fluoro-gas is the mixed gas of tetrafluoromethane, hexafluoroethylene, nitrogen trifluoride or above-mentioned gas.
10. the method for fluorine residue in the reduction cvd reactive chamber cavity as claimed in claim 8, wherein this hydrogen-containing gas is a hydrogen.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031556930A CN1332064C (en) | 2003-09-03 | 2003-09-03 | Method of lowering residual fluorind in sedimentation reaction chamber cavity body |
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|---|---|---|---|
| CNB031556930A CN1332064C (en) | 2003-09-03 | 2003-09-03 | Method of lowering residual fluorind in sedimentation reaction chamber cavity body |
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| CN1590582A true CN1590582A (en) | 2005-03-09 |
| CN1332064C CN1332064C (en) | 2007-08-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7651960B2 (en) | 2005-04-18 | 2010-01-26 | United Microelectronics Corp. | Chemical vapor deposition method preventing particles forming in chamber |
| CN102098863B (en) * | 2009-12-14 | 2013-09-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrode board for plasma processing equipment and method for removing process sediments |
| CN110747450A (en) * | 2019-09-12 | 2020-02-04 | 常州比太科技有限公司 | Method for quickly recovering service life of cavity after on-line cleaning of HIT (heterojunction with intrinsic thin layer) coating equipment |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910043A (en) * | 1987-07-16 | 1990-03-20 | Texas Instruments Incorporated | Processing apparatus and method |
| US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
| US6350697B1 (en) * | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
| CN1184353C (en) * | 2001-04-09 | 2005-01-12 | 华邦电子股份有限公司 | Method for cleaning gas distributor of chemical gas-phase depositing reaction chamber |
| US7028696B2 (en) * | 2001-05-04 | 2006-04-18 | Lam Research Corporation | Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method |
| US6626188B2 (en) * | 2001-06-28 | 2003-09-30 | International Business Machines Corporation | Method for cleaning and preconditioning a chemical vapor deposition chamber dome |
-
2003
- 2003-09-03 CN CNB031556930A patent/CN1332064C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7651960B2 (en) | 2005-04-18 | 2010-01-26 | United Microelectronics Corp. | Chemical vapor deposition method preventing particles forming in chamber |
| CN102098863B (en) * | 2009-12-14 | 2013-09-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrode board for plasma processing equipment and method for removing process sediments |
| CN110747450A (en) * | 2019-09-12 | 2020-02-04 | 常州比太科技有限公司 | Method for quickly recovering service life of cavity after on-line cleaning of HIT (heterojunction with intrinsic thin layer) coating equipment |
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| CN1332064C (en) | 2007-08-15 |
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