CN1589077A - Organic luminous device and its forming method - Google Patents
Organic luminous device and its forming method Download PDFInfo
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- CN1589077A CN1589077A CN 200410084918 CN200410084918A CN1589077A CN 1589077 A CN1589077 A CN 1589077A CN 200410084918 CN200410084918 CN 200410084918 CN 200410084918 A CN200410084918 A CN 200410084918A CN 1589077 A CN1589077 A CN 1589077A
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- transparent cathode
- element region
- light emitting
- organic light
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Abstract
This invention discloses an organic luminous device with an optical compensation film including: a base having boards of a first and a second element zones, a first diode and a second diode, in which, the first diode is set on the fist zone and the second diode is on the second zone, and each diode includes an anode, a transparent cathode set oppositely and an organic luminous layer between then. Thickness of the cathode above the first and second element zones is approximately the same, besides, an optical layer is set above the transparent cathode of the first element zone being the optical compensation film for changing the thickness of the two element zones.
Description
Technical field
The present invention relates to a kind of organic light emitting apparatus, particularly relate to a kind of Organic Light Emitting Diode with optical compensation (opticalcompensation) film (organic electro-luminescence diode, OLED), to form different cathode thickness.
Background technology
Organic Light Emitting Diode (OLED) is a kind of emissive type element that uses organic material.Need the strict brilliant requirement of length than traditional inorganic light-emitting diode (LED), Organic Light Emitting Diode can be produced on the large-area substrates easily, forms noncrystalline (amorphous) film.On the other hand, Organic Light Emitting Diode also differs from lcd technology, does not need backlight (backlight), therefore can simplify technology.Along with technology develops rapidly, following Organic Light Emitting Diode will be applied on the full-color display floaters of small size such as personal digital assistant, digital camera,, can extend on large-sized computer and the video screen, even be applied to flexible display during maturation in case this technology more becomes.
Typically, Organic Light Emitting Diode comprises: an anode, a negative electrode and be arranged at anode and negative electrode between organic luminous layer.Wherein organic luminous layer comprises: the hole transmission layer of a contiguous anode, the electron transfer layer of an adjacent cathodes and be arranged at hole transmission layer and electron transfer layer between luminescent layer.When applying a current potential and be worse than between negative electrode and the anode, electronics can inject electron transfer layer from negative electrode, and passes through electron transfer layer and luminescent layer.Simultaneously, the hole can be from anode injected hole transport layer, and passes through hole transmission layer.Afterwards, electronics and hole can combine (recombine) again with the interface of hole transmission layer and release energy with luminous form in contiguous luminescent layer.
Yet because the wavelength of blue light and ruddiness differs bigger, so the transparent cathode that must use different-thickness is with the ruddiness and the blue light that reach high color purity and promote current efficiency.Generally speaking, the material of transparent cathode be generally by the formed indium tin oxide of sputtering method (indium tin oxide, ITO) or indium-zinc oxide (indium zinc oxide, IZO).In order to make the transparent cathode of different-thickness, must use a metal mask to form redness, green, and the transparent cathode of blue Organic Light Emitting Diode respectively.Yet during the sputtering technology, metal mask rises because of ionic bombardment makes temperature, causes its generation distortion and can't successfully form each transparent cathode.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of organic light emitting apparatus, it adjusts the thickness of transparent cathode by an optical compensation films, to increase the current efficiency of organic light emitting apparatus.
Another object of the present invention is to provide a kind of formation method of organic light emitting apparatus, it prevents to deform in order to the mask that forms negative electrode by the lower optical compensation films of formation temperature.
According to above-mentioned purpose, the invention provides a kind of organic light emitting apparatus, it comprises: second transparent cathode that first transparent cathode that a substrate, a first anode and are oppositely arranged, one first organic luminous layer, one first optical layers, a second plate and are oppositely arranged, and one second organic luminous layer.This substrate has first element region and one second element region.First transparent cathode that the first anode and is oppositely arranged is arranged on first element region.First organic luminous layer is arranged between the first anode and first transparent cathode.First optical layers is arranged at first transparent cathode top.Second transparent cathode that second plate and is oppositely arranged is arranged on second element region.Second organic luminous layer is arranged between the second plate and second transparent cathode.Moreover the thickness of first transparent cathode is same as second transparent cathode substantially.
According to above-mentioned purpose, the invention provides a kind of formation method of organic light emitting apparatus again.At first, provide a substrate, it has one first element region and one second element region.On first and second element region, form an anode respectively.Then, above anode, form an organic luminous layer and a transparent cathode in regular turn.At last, on the transparent cathode of first element region, form one first optical layers.
According to another above-mentioned purpose, the invention provides a kind of organic light emitting apparatus, it comprises: second transparent cathode that first transparent cathode that a substrate, a first anode and are oppositely arranged, one first organic luminous layer, one first optical layers, a second plate and are oppositely arranged, and one second organic luminous layer.This substrate has first element region and one second element region.First transparent cathode that the first anode and is oppositely arranged is arranged on first element region.First organic luminous layer is arranged between the first anode and first transparent cathode.First optical layers is arranged between first transparent cathode and first organic luminous layer.Second transparent cathode that second plate and is oppositely arranged is arranged on second element region.Second organic luminous layer is arranged between the second plate and second transparent cathode.Moreover the thickness of first transparent cathode is same as second transparent cathode substantially.
According to another above-mentioned purpose, the invention provides a kind of formation method of organic light emitting apparatus again.At first, provide a substrate, it has one first element region and one second element region.On first and second element region, form an anode respectively.Then, above anode, form an organic luminous layer.Afterwards, above the organic luminous layer of first element region, form one first optical layers.At last, on first optical layers of first element region, form a transparent cathode, and above the organic luminous layer of second element region, form transparent cathode.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. elaborates.
Description of drawings
Fig. 1 shows the organic light emitting apparatus generalized section with optical compensation films according to first embodiment of the invention.
Fig. 2 shows the organic light emitting apparatus generalized section with optical compensation films according to second embodiment of the invention.
Fig. 3 shows the organic light emitting apparatus generalized section with optical compensation films according to third embodiment of the invention.
Fig. 4 shows the organic light emitting apparatus generalized section with optical compensation films according to fourth embodiment of the invention.
Fig. 5 shows the current density (mA/cm of ruddiness Organic Light Emitting Diode
2) with the graph of relation of driving voltage (volt).
Fig. 6 shows the brightness (cd/m of ruddiness Organic Light Emitting Diode
2) with the graph of relation of driving voltage (volt)
Fig. 7 shows the current efficiency (cd/A) of ruddiness Organic Light Emitting Diode and the graph of relation of driving voltage (volt)
The simple symbol explanation
10～the first element regions; 20～the second element regions; 100～substrate; 102a, 102b～anode; 104a, 104b～hole transmission layer; 106a, 106b～luminescent layer; 108a, 108b～electron transfer layer; 111a, 111b～organic luminous layer; 112a, 112b～transparent cathode; 114a, 114b～optical layers; 116a, 116b～Organic Light Emitting Diode.
Embodiment
Below cooperate Fig. 1 that the formation method of the machine light-emitting device of first embodiment of the invention is described, it can be applicable to flat-panel screens, for example top light emitting organic light emitting display (top-emitting organicelectro-luminescence display).At first, provide a substrate 100, for example glass, quartz, silicon or plastic base, it has a plurality of element regions, in order to be formed with OLED (OLED) thereon.For simplicity of illustration, only show one first element region 10 and one second element region 20 herein.First and second element region 10 and 20 is in order to form the Organic Light Emitting Diode that shows different colours thereon.For example, first element region 10 is in order to forming red Organic Light Emitting Diode, and second element region 20 is in order to form blue Organic Light Emitting Diode.
Next, can form an anode 102a on first element region 10 and on second element region 20, form an anode 102b by existing deposition technique.Anode 102a and 102b can be an individual layer conductive layer or lamination conductive structure.Typically, the material of anode can be the oxidation of indium tin (indium tin oxide, ITO) layer or aluminum metal layer.In the present embodiment, anode 102a and 102b can be the lamination of indium oxide layer of tin (hyaline layer) and aluminum metal layer (non transparent layer), and wherein non transparent layer is as a reflection layer.Then, form a hole injection layer (hole injection layer) (not illustrating) on anode 102a and 102b, its material can be CuPc (copper phthalocyanine).
Next, be formed with the anode 102a of hole injection layer and 102b top up and form organic luminous layer 111a and 111b respectively.Organic luminous layer 111a can be an organic electric-excitation luminescent (electro-luminescence) laminated construction, and it comprises a hole transmission layer (hole transportlayer) 104a, a luminescent layer (emitting layer) 106a at least, reaches an electron transfer layer, (electrontransport layer) 108a.Similarly, organic luminous layer 111b can be a laminated construction and its and comprises a hole transmission layer 104b, a luminescent layer 106b, an and electron transfer layer 108b at least.Organic luminous layer 111a and 111b can form it by chemical vapour deposition (CVD) or hot vapour deposition method.Moreover the material of hole transmission layer 104a and 104b can be NPB (naphtha-phenyl benzidene); The material of luminescent layer 106a and 106b can be the Alq of doping
3(tris aluminum 8-hydroxy quinoline); The material of electron transfer layer 108a and 108b can be Alq
3
Next, form electron injecting layer (electron injectionlayer) (not illustrating) on organic luminous layer 111a and 111b, its material can be lithium fluoride (LiF).Afterwards, be formed with the organic luminous layer 111a of electron injecting layer and 111b top up and form transparent cathode 112a and 112b respectively.The material of transparent cathode 112a and 112b can be indium tin oxide (ITO) or indium-zinc oxide, and (indium zinc oxide IZO) and by sputtering method forms it.Thus, just can above first and second element region 10 and 20, finish the making of red Organic Light Emitting Diode 116a and blue Organic Light Emitting Diode 116b respectively.
As described above, because the wavelength of blue light and ruddiness differs bigger, therefore must use the transparent cathode of different-thickness.Generally speaking, the transparent cathode thickness of blue Organic Light Emitting Diode is less than red Organic Light Emitting Diode.For example, the transparent cathode thickness of blue Organic Light Emitting Diode is in the scope of 300 to 450 dusts, and the transparent cathode thickness of red Organic Light Emitting Diode is in the scope of 700 to 800 dusts.In the present embodiment, for fear of by spatter the method for crossing when forming transparent cathode employed metal mask deform, form transparent cathode 112a and the 112b of a thickness in organic luminous layer 111a and 111b about the scope of 300 to 450 dusts.Then, carry out committed step of the present invention, on the transparent cathode 112a of first element region 10, form an optical layers 114a, with the thickness of the transparent cathode 112a that compensates red Organic Light Emitting Diode 116a.Herein, the thickness of optical layers 114a is in the scope of 150 to 250 dusts.Moreover, optical layers 114a can be by electron beam deposition (E-beam deposition), hot evaporation (thermalevaporating), molecular beam epitaxy (molecular beam epitaxy.MBE), vapour phase epitaxy (vaporphase epitaxy, and Metalorganic chemical vapor deposition (metal organic chemical vapordeposition, MOCVD) any and form it VPE).In the present embodiment, optical layers 114a for the light transmittance of visible light greater than 40%.For example, its material can be selected certainly in one of following group of families: AlF
3, AlO
xN
y, BaF
2, BeO, Bi
2O
3, BiF
3, CaF
2, CdSe, CdS, CdTe, CeF
3, CeF
3, CeO
2, CsI, Gd
2O
3, HfO
2, HoF
3, Ho
2O
3, In
2O
3, LaF
3, La
2O
3, LiF, MgF
2, MgO, NaF, Na
3AlF
6, Na
5Al
3F
14, Nb
2O
5, NdF
3, Nd
2O
3, PbCl
2, PbF
2, PbTe, Pr
6O
11, Sb
2O
3, Si
xN
y, SiO
x, SnO
2, Ta
2O
5, TeO
2, TiN, TiO
2, TiCl, ThF
4, V
2O
5, WO
3, YF
3, Y
2O
3, YbF
3, Yb
2O
3, ZnO, ZnS, ZnSe, ZrO
2And combination.Moreover the preferred refractive index of optical layers 114a is for being not less than 2.Because the required formation temperature of said method is lower than 70 ℃, therefore can effectively avoid metal mask to deform.
Similarly, please refer to Fig. 1, it shows the organic light emitting apparatus generalized section with optical compensation films according to first embodiment of the invention.This device comprises: a substrate 100 and diode 116a and 116b.Have first element region 10 and one second element region 20 on the substrate 100, wherein diode 116a is arranged on first element region 10 and another diode 116b is arranged on second element region 20.Diode 116a is in order to send ruddiness, it comprises: the transparent cathode 112a that an anode 102a and is oppositely arranged, an organic luminous layer 111a, be arranged between anode 102a and the transparent cathode 112a and an optical layers 114a, be arranged at transparent cathode 112a top.Diode 116b is in order to send blue light, and it comprises: the transparent cathode 112b that an anode 102b and is oppositely arranged, an organic luminous layer 111b are arranged between anode 102b and the transparent cathode 112b.The thickness of transparent cathode 112a is in the scope of 300 to 450 dusts and be same as transparent cathode 112b substantially.
Next, please refer to Fig. 5, it shows the current density (mA/cm of ruddiness Organic Light Emitting Diode
2) with the graph of relation of driving voltage (volt), wherein curve A represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 350 dusts; Curve B represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode that 350 dusts and optical compensation films are about 200 dusts; Curve C represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 750 dusts.By Fig. 5 institute as can be known, utilize optical layers to compensate the transparent cathode thickness (curve B) of Organic Light Emitting Diode, current density can be same as curve A and curve C substantially.
Next, please refer to Fig. 6, it shows the brightness (cd/m of ruddiness Organic Light Emitting Diode
2) with the graph of relation of driving voltage (volt), wherein curve A represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 350 dusts; Curve B represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode that 350 dusts and optical compensation films are about 200 dusts; Curve C represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 750 dusts.Similarly, by Fig. 6 institute as can be known, utilize optical layers to compensate the transparent cathode thickness (curve B) of Organic Light Emitting Diode, brightness can be same as curve A and curve C substantially.
Next, please refer to Fig. 7, it shows the current efficiency (cd/A) of ruddiness Organic Light Emitting Diode and the graph of relation of driving voltage (volt), and wherein curve A represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 350 dusts; Curve B represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode that 350 dusts and optical compensation films are about 200 dusts; Curve C represents that transparent cathode thickness is about the ruddiness Organic Light Emitting Diode of 750 dusts.By Fig. 7 institute as can be known, utilize optical layers to compensate the transparent cathode thickness (curve B) of Organic Light Emitting Diode, its current efficiency is higher than the ruddiness Organic Light Emitting Diode (curve C) of transparent cathode thickness deficiency and approaches curve A.That is, according to the organic light emitting apparatus of first embodiment of the invention, can prevent that metal mask from deforming and improve component reliability.Moreover, compared to curve C, can increase current efficiency.
Next, please refer to Fig. 2, the organic light emitting apparatus generalized section that it shows according to second embodiment of the invention with optical compensation films, the parts that wherein are same as Fig. 1 use identical label and omit its narration.In first embodiment, the thickness of transparent cathode 112a and 112b is same as the required transparent cathode thickness of blue light organic diode 116b substantially, for example in the scope of 300 to 450 dusts.And in a second embodiment, can reduce the thickness of transparent cathode 112a and 112b.Then, can on the transparent cathode 112b of second element region 20, additionally form an optical layers 114b and come compensated cathode thickness except forming the optical layers 114a on the transparent cathode 112a of first element region 10.Be noted that optical layers 114b thickness is different from optical layers 114a.As optical layers 114a, optical layers 114b thickness can adjust according to the required cathode thickness of blue light Organic Light Emitting Diode 116b.Moreover greater than 40%, its material can be identical or inequality in optical layers 114a for the light transmittance of visible light for optical layers 114b.Thus, can reach the advantage of first embodiment equally.
Next, please refer to Fig. 3, the organic light emitting apparatus generalized section that it shows according to third embodiment of the invention with optical compensation films, the parts that wherein are same as Fig. 1 use identical label and omit its narration.In first embodiment, optical layers 114a as optical compensation films is formed on the transparent cathode 112a, and in the 3rd embodiment, can form electron injecting layer (not illustrating) afterwards, above the organic luminous layer 111a of first element region 10, form optical layers 114a.Afterwards, forming transparent cathode 112a above the optical layers 114a of first element region 10 and forming transparent cathode 112b above the organic luminous layer 111b that is formed with electron injecting layer at second element region 20 simultaneously again.Thus, can reach the advantage of first embodiment equally.
At last, please refer to Fig. 4, the organic light emitting apparatus generalized section that it shows according to fourth embodiment of the invention with optical compensation films, the parts that wherein are same as Fig. 2 use identical label and omit its narration.In a second embodiment, on transparent cathode 112a on first and second element region 10 and 20 and 112b, form the optical layers 114a and the 114b of different-thickness respectively, and in the 4th embodiment, then before forming transparent cathode 112a and 112b, above organic luminous layer 111a that is formed with electron injecting layer (not illustrating) and 111b, form the optical layers 114a and the 114b of different-thickness respectively.Thus, can reach the advantage of second embodiment equally.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (10)
1, a kind of organic light emitting apparatus comprises:
One substrate, it has first element region and one second element region;
First transparent cathode that one first anode and is oppositely arranged is arranged on this first element region;
One first organic luminous layer is arranged between this first anode and this first transparent cathode;
One first optical layers is arranged at this first transparent cathode top;
Second transparent cathode that one second plate and is oppositely arranged is arranged on this second element region; And
One second organic luminous layer is arranged between this second plate and this second transparent cathode;
Wherein this first transparent cathode is identical substantially with the thickness of this second transparent cathode.
2, organic light emitting apparatus as claimed in claim 1 also comprises one second optical layers, is arranged on this second transparent cathode, and its thickness is different from this first optical layers.
3, organic light emitting apparatus as claimed in claim 2, wherein this first and this second optical layers for the light transmittance of visible light greater than 40% and refractive index be not less than 2.
4, a kind of formation method of organic light emitting apparatus comprises the following steps:
One substrate is provided, and it has one first element region and one second element region;
Respectively this first and this second element region on form an anode;
Above this anode, form an organic luminous layer;
Above this organic luminous layer, form a transparent cathode; And
On this transparent cathode of this first element region, form one first optical layers.
5, the formation method of organic light emitting apparatus as claimed in claim 4 also is included in and forms one second optical layers on this transparent cathode of this second element region, and its thickness is different from this first optical layers.
6, a kind of organic light emitting apparatus comprises:
One substrate, it has first element region and one second element region;
First transparent cathode that one first anode and is oppositely arranged is arranged on this first element region;
One first organic luminous layer is arranged between this first anode and this first transparent cathode;
One first optical layers is arranged between this first transparent cathode and this first organic luminous layer;
Second transparent cathode that one second plate and is oppositely arranged is arranged on this second element region; And
One second organic luminous layer is arranged between this second plate and this second transparent cathode;
Wherein this first transparent cathode is identical substantially with the thickness of this second transparent cathode.
7, organic light emitting apparatus as claimed in claim 6 also comprises one second optical layers, is arranged between this second transparent cathode and this second organic luminous layer, and its thickness is different from this first optical layers.
8, organic light emitting apparatus as claimed in claim 7, wherein this first and this second optical layers for the light transmittance of visible light greater than 40% and refractive index be not less than 2.
9, a kind of formation method of organic light emitting apparatus comprises the following steps:
One substrate is provided, and it has one first element region and one second element region;
Respectively this first and this second element region on form an anode;
Above this anode, form an organic luminous layer;
Above this organic luminous layer of this first element region, form one first optical layers; And
On this first optical layers of this first element region, form a transparent cathode, and above this organic luminous layer of second element region, form this transparent cathode.
10, the formation method of organic light emitting apparatus as claimed in claim 8 also is included in and forms one second optical layers between this organic luminous layer of this second element region and this transparent cathode, and its thickness is different from this first optical layers.
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| CN 200410084918 CN1589077B (en) | 2004-10-10 | 2004-10-10 | Organic luminous device and its forming method |
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|---|---|---|---|
| CN 200410084918 CN1589077B (en) | 2004-10-10 | 2004-10-10 | Organic luminous device and its forming method |
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| CN1589077B CN1589077B (en) | 2010-04-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461489C (en) * | 2005-03-03 | 2009-02-11 | 友达光电股份有限公司 | Organic light emitting diode |
| CN105977397A (en) * | 2016-05-26 | 2016-09-28 | 京东方科技集团股份有限公司 | Organic light-emitting diode device and preparation method thereof, array substrate, and display device |
| CN109585662A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of dot structure and preparation method thereof, display panel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP3983037B2 (en) * | 2001-11-22 | 2007-09-26 | 株式会社半導体エネルギー研究所 | Light emitting device and manufacturing method thereof |
-
2004
- 2004-10-10 CN CN 200410084918 patent/CN1589077B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461489C (en) * | 2005-03-03 | 2009-02-11 | 友达光电股份有限公司 | Organic light emitting diode |
| CN105977397A (en) * | 2016-05-26 | 2016-09-28 | 京东方科技集团股份有限公司 | Organic light-emitting diode device and preparation method thereof, array substrate, and display device |
| CN105977397B (en) * | 2016-05-26 | 2018-09-18 | 京东方科技集团股份有限公司 | Organic light emitting diode device and preparation method thereof, array substrate, display device |
| US10381591B2 (en) | 2016-05-26 | 2019-08-13 | Boe Technology Group Co., Ltd. | Organic light emitting diode device with a photoinduced electron film layer and method for manufacturing the same |
| CN109585662A (en) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | A kind of dot structure and preparation method thereof, display panel |
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| Publication number | Publication date |
|---|---|
| CN1589077B (en) | 2010-04-28 |
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