CN1581480A - Static discharge protective circuit structure - Google Patents
Static discharge protective circuit structure Download PDFInfo
- Publication number
- CN1581480A CN1581480A CN 03153252 CN03153252A CN1581480A CN 1581480 A CN1581480 A CN 1581480A CN 03153252 CN03153252 CN 03153252 CN 03153252 A CN03153252 A CN 03153252A CN 1581480 A CN1581480 A CN 1581480A
- Authority
- CN
- China
- Prior art keywords
- distribution
- protection circuit
- esd protection
- those
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
The protection circuit is composed of several thin film transistor (TFT) and at least one tip structure. Each TFT possesses a source pole/drain pole, and at least one of the said tip structures is configured at tail ends of gate pole and edge, which keeps away from source pole or drain pole. Thus, static discharging at tip end will not burn components to cause malfunction of the protection circuit.
Description
Technical field
The present invention relates to the structure of the ESD protection circuit in a kind of electricity field protective circuit device; particularly relate to a kind of LCD (Liquid Crystal Display that is applied to; LCD); electrostatic energy is discharged in certain location; and ESD protection circuit (Electrostatic Discharge, structure ESD) that can avoid element to be burnt.
Background technology
Static discharge is the phenomenon from the electrostatic displacement on non-conductive surface, the infringement that it can cause element in the integrated circuit and other circuit to form.The human body of for example walking on carpet just can detect under the relative humidity condition with higher and has hundreds of approximately to several kilovolts quiescent voltage, and can detect the quiescent voltage that has approximately more than 10,000 volts under the lower situation of relative humidity.
General in the manufacture process of LCD, can pass through many boards and personnel's operation, and board and personnel can have static.Therefore when above-mentioned electrified body (human body, machine or instrument) when touching display panels, may discharge to display panels, the instantaneous power of this static discharge might cause the element in the display panels and circuit damages or inefficacy.
Element and circuit in the electrostatic discharge damage display panels generally all can design ESD protection circuit in the non-display area of display panels.And ESD protection circuit is in the manufacture process of thin-film transistor usually, is formed on edge's (in non-display area) of substrate in the lump.More detailed explanation is, when forming in the viewing area at substrate at definition the first metal layer (M1) when scanning the gate of distribution and active member, can define the gate of ESD protection circuit simultaneously in the non-display area of substrate.Follow-up, when when definition second metal level (M2) forms the source/drain of data wiring and active member in the viewing area at substrate, also can in the non-display area of substrate, define the source/drain of ESD protection circuit simultaneously.Thus, when panel is subjected to the impact of static discharge, will trigger the protection mechanism of ESD protection circuit, and static discharge is derived, avoid static discharge directly to import inner element and circuit, and cause damage.
But but there are some problems in the design that has traditional ESD protection circuit now, and promptly static discharge is protected the road circuit easily in sharp corner or the discharge of current density higher position, and causes contiguous element to be damaged.This is because have the design that the layout of traditional ESD protection circuit has many bendings now, and can be higher in the current density in these knees, so static concentrates on discharge herein easily.In addition, the layout of general ESD protection circuit is in the angular structure of some zone meeting, and is same, and static also concentrates on this place's discharge easily.If the position of above-mentioned static discharge by chance is the element whereabouts, then a large amount of current concentrations may cause element to be burnt in this place's discharge, make ESD protection circuit lose efficacy.
This shows that the structure of above-mentioned existing ESD protection circuit still has defective, and demands urgently further being improved.The problem that exists for the structure that solves ESD protection circuit; relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; but do not see always that for a long time suitable design finished by development; and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that the structure of above-mentioned existing ESD protection circuit exists; the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge; actively studied innovation; in the hope of founding a kind of structure of novel ESD protection circuit; can improve the structure of general existing ESD protection circuit, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is; overcome the defective of the structure existence of existing ESD protection circuit; and provide a kind of structure of novel ESD protection circuit; technical problem underlying to be solved is to make it that electrostatic energy is discharged in certain location, and can avoid element to be burnt.
Purpose of the present invention and to solve its technical problem underlying be to adopt following technical scheme to realize.The structure of a kind of ESD protection circuit that proposes according to the present invention, it comprises: the plurality of films transistor, each those thin-film transistor has a gate and one source pole/drain respectively; And at least one cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The structure of aforesaid ESD protection circuit, wherein said those source/drain are the layouts for linearity.
The structure of aforesaid ESD protection circuit, wherein said those cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those cutting-edge structures are the structures that attenuate for acuter angles or gate tail end.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.The structure of a kind of ESD protection circuit that proposes according to the present invention, be suitable for improving the static discharge phenomenon that when the layout of this ESD protection circuit strides across one first distribution, is produced, the structure of this ESD protection circuit comprises: the plurality of films transistor, and each those thin-film transistor has a gate and one source pole/drain respectively; One second distribution, it is that this source/drain with those thin-film transistors electrically connects, and this second distribution is to stride across this first distribution; And at least one cutting-edge structure, be configured in this first distribution and this second distribution intersection near, and this cutting-edge structure be connected with this first distribution and this second distribution one of them links together at least.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The structure of aforesaid ESD protection circuit, it more comprises at least one first cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those first cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those source/drain are the layouts for linearity.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.The structure of a kind of ESD protection circuit that proposes according to the present invention, this ESD protection circuit is and one first distribution electrically connects, the structure of this ESD protection circuit comprises: a plurality of electric static discharge protectors; At least one plan electric static discharge protector, this plan electric static discharge protector is to be arranged in by those electric static discharge protectors, and be positioned at outermost, this plan electric static discharge protector comprises: a plurality of plan thin-film transistors, each those plan thin-film transistor have one respectively and intend a gate and a plan source/drain; One intends second distribution, and it is that those these plan source/drain of intending thin-film transistor electrically connect, and this plan second distribution only extends near this first distribution part; And at least one cutting-edge structure, it is to be configured in contiguous those to intend this first distribution edge of the second distribution tail end.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The structure of aforesaid ESD protection circuit, it more comprises at least one first cutting-edge structure, is configured in the tail end place that this intends second distribution.
The structure of aforesaid ESD protection circuit, it more comprises at least one second cutting-edge structure, be configured in part those intend the tail end place of gates and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those plan source/drain are the layouts for linearity.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.The structure of a kind of ESD protection circuit that proposes according to the present invention, this ESD protection circuit is and one first distribution electrically connects, the structure of this ESD protection circuit comprises: a plurality of electric static discharge protectors; At least one plan electric static discharge protector, this plan electric static discharge protector is to be arranged in by those electric static discharge protectors, and be positioned at outermost, this plan electric static discharge protector comprises: a plurality of plan thin-film transistors, each those plan thin-film transistor have one respectively and intend a gate and a plan source/drain; One intends second distribution, and it is that those these plan source/drain of intending thin-film transistor electrically connect, and this plan second distribution is to stride across this first distribution; And at least one cutting-edge structure, be configured in this first distribution and this plan second distribution intersection near, and this cutting-edge structure is that one of them links together at least with this first distribution and this plan second distribution.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
The structure of aforesaid ESD protection circuit, wherein those cutting-edge structures of part are to link together with this first distribution, another those cutting-edge structures partly are to intend second distribution with this to link together.
The structure of aforesaid ESD protection circuit, it more comprises at least one first cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those first cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
The structure of aforesaid ESD protection circuit, wherein said those plan source/drain are the layouts for linearity.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of structure of ESD protection circuit, and it is made of several thin-film transistors and at least one cutting-edge structure, and wherein each thin-film transistor is to comprise a gate and one source pole/drain.And cutting-edge structure be configured in the tail end place of part gate and edge at least one of them.Particularly, source/drain can be the layout of linearity, and cutting-edge structure be positioned at the gate tail end place that avoids source/drain and edge at least one of them, and above-mentioned cutting-edge structure can be acuter angles or the structure that the gate tail end is attenuated.
The present invention proposes a kind of structure of ESD protection circuit again; it is to be suitable for improving the static discharge phenomenon that is produced when the layout of ESD protection circuit strides across one first distribution, and the structure of this ESD protection circuit comprises several thin-film transistors, one second distribution and at least one cutting-edge structure.Wherein, each thin-film transistor has a gate and one source pole/drain.And second distribution is to electrically connect with the source/drain of thin-film transistor, and second distribution is to stride across first distribution.In addition, cutting-edge structure is configured near first distribution and the second distribution intersection, and cutting-edge structure is to link together with first distribution, or link together with second distribution, or the cutting-edge structure of a part is to link together with first distribution, and another cutting-edge structure partly is to link together with second distribution.
The present invention proposes a kind of structure of ESD protection circuit again; it is to electrically connect with one first distribution; and ESD protection circuit is made of several electric static discharge protectors and at least one plan electric static discharge protector; wherein; this plan electric static discharge protector is to be arranged in by the electric static discharge protector; and be positioned at outermost, and plan electric static discharge protector of the present invention comprises several plan thin-film transistors, plan second distribution and an at least one cutting-edge structure.Wherein, each plan thin-film transistor has a plan gate and a plan source/drain.And intend second distribution is and the plan source/drain of intending thin-film transistor electrically connects, and intends second distribution and only extend near the first distribution part.In addition, cutting-edge structure is to be positioned at the contiguous first distribution edge that intends the tail end place of second distribution.The present invention also can dispose another cutting-edge structure at the tail end place that intends second distribution.
The present invention proposes a kind of structure of ESD protection circuit again; it is to electrically connect with one first distribution; and ESD protection circuit is made of several electric static discharge protectors and at least one plan electric static discharge protector; wherein; this plan electric static discharge protector is to be arranged in by the electric static discharge protector; and be positioned at outermost, and plan electric static discharge protector of the present invention comprises several plan thin-film transistors, plan second distribution and an at least one cutting-edge structure.Wherein each plan thin-film transistor has a plan gate and a plan source/drain.And intend second distribution is and the plan source/drain of intending thin-film transistor electrically connects, and to intend second distribution be to stride across first distribution.In addition, cutting-edge structure is configured in first distribution and intends near the second distribution intersection, and cutting-edge structure is with first distribution and intends second distribution one of them links together at least.
The present invention to force static in designed cutting-edge structure place discharge, can effectively prevent therefore that static from burning element in the discharge of element whereabouts owing in the specific location design of ESD protection circuit cutting-edge structure is arranged.
The present invention is owing to utilize to intend the design of electric static discharge protector, and at certain location design cutting-edge structure, so that static discharges in certain location, so the present invention can effectively avoid static in the discharge of element whereabouts and burn element.
In sum, the structure of the ESD protection circuit of special construction of the present invention is made of several thin-film transistors and at least one cutting-edge structure; Wherein, each thin-film transistor has a gate and one source pole/drain respectively; And cutting-edge structure be configured in the tail end place of part gate and edge at least one of them; Particularly cutting-edge structure is to be positioned at gate tail end place or the edge that avoids source/drain; Because cutting-edge structure is to design in the position of avoiding element, therefore when static discharges at the place, tip, causes ESD protection circuit to lose efficacy, and electrostatic energy is discharged in certain location, and then can avoid element to be burnt with regard to not burning element.It has above-mentioned many advantages and practical value, and having there is no similar structural design in like product publishes or uses, no matter structurally or bigger improvement all arranged on the function, have technically than much progress, and produced handy and practical effect, and have the effect of enhancement really, thus be suitable for practicality more, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is according to looking schematic diagram on the ESD protection circuit of first embodiment of the invention.
Fig. 2 is by the generalized section of I-I ' section among Fig. 1.
Fig. 3 is the pattern form schematic diagram of various cutting-edge structures.
Fig. 4 is according to looking schematic diagram on the ESD protection circuit of second embodiment of the invention.
Fig. 5 is according to looking schematic diagram on the ESD protection circuit of third embodiment of the invention.
Fig. 6 be Fig. 5 the plan electric static discharge protector on look schematic diagram.
Fig. 7 is by the generalized section of III-III ' section among Fig. 6.
Fig. 8 is according to looking schematic diagram on the plan electric static discharge protector of fourth embodiment of the invention.
101: thin-film transistor (electric crystal) 102: gate
108: source/drain 110,404a, 404b: cutting-edge structure
610,604a, 604b: cutting-edge structure 804a, 804b: cutting-edge structure
104: dielectric layer 106: semiconductor layer
300a, 300b: pattern 302a, the 302b of cutting-edge structure: the pattern of cutting-edge structure
304a, 304b: pattern 306a, the 306b of cutting-edge structure: the pattern of cutting-edge structure
308a, 308b: the pattern 402 of cutting-edge structure: common lines (bridging line)
406: data distribution 500: electric static discharge protector
502: intend electric static discharge protector 504: component structure
506: intend component structure 508,510: lead
601: intend thin-film transistor (electric crystal) 602: intend gate
608: intend source/drain 606,806: intend the data distribution
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, its embodiment of structure, structure, feature and the effect thereof of the ESD protection circuit that foundation the present invention is proposed, describe in detail as after.
The structure of ESD protection circuit provided by the present invention; be that design has cutting-edge structure at the certain location place; with with electrostatic guide to certain location; and these certain location are for avoiding element or circuit whereabouts, so the present invention can make element or circuit can not suffer the infringement of static discharge.Below enumerate several preferred embodiments and cooperate appended diagram that the structure of ESD protection circuit of the present invention is described; but and the layout of the non-limiting ESD protection circuit of the present invention pattern that must be among the figure to be illustrated; so long as design has cutting-edge structure in ESD protection circuit; with guiding static other layout, also all comprise within the scope of the invention to ad-hoc location.
First embodiment
Please consult Figure 1 and Figure 2 simultaneously, Fig. 1 is according to looking schematic diagram on the ESD protection circuit of first embodiment of the invention, and Fig. 2 is by the generalized section of I-I ' section among Fig. 1.The ESD protection circuit of present embodiment is made of several thin-film transistors 101 and at least one cutting-edge structure 110, wherein:
Each above-mentioned thin-film transistor 101, have a gate 102 and one source pole/drain 108, and between gate 102 and source/drain 108, also comprise forming and be provided with a dielectric layer 104 and semi-conductor layer 106, wherein, this gate 102, be to be configured on the substrate 100, and belong to the some of the first metal layer (M1).And dielectric layer 104 is to cover on the gate 102.This semiconductor layer 106 is to cover on the dielectric layer 104, and wherein semiconductor layer 106 for example is to comprise a undoped amorphous silicon layer (channel layer) and once doped amorphous silicon layer (ohmic contact layer).
In addition, this source/drain 108 is to belong to second metal level (M2), and it is formed on the semiconductor layer 106, and 102 configurations of corresponding gate.In a preferred embodiment, source/drain 108 can be the layout of symmetry and linearity.Because source/drain 108 is the layouts for linearity, and the gate 102 of corresponding source/drain 108 also is designed to linearity, so each element all presents the layout structure of symmetry and straight line.The layout structure mode of such symmetry and straight line can effectively solve the forniciform layout type that has traditional ESD protection circuit now, can produce because of the higher situation that makes this place be easy to generate discharge of the current density in knee.
In addition, above-mentioned cutting-edge structure 110 is tail end place or edge or tail end place or edge two places that are configured in part gate 102.And cutting-edge structure 110 whereabouts are in order to avoid element or circuit whereabouts, for example are to avoid source/drain 108 parts.And cutting-edge structure 110 can be an acuter angles, or the structure (as shown in Figure 3) that the gate tail end is attenuated.In Fig. 3, this cutting-edge structure 110 can be the structure 300a that attenuates of gate tail end or acuter angles 302a, 304a, 306a, even can keep the structure 308a of former gate tail end, and has just designed cutting-edge structure at another gate place of correspondence.And be configured in the cutting-edge structure of another gate edge, can be projective structure 300b, 308b or acuter angles 302b, 304b, 306b.The cutting-edge structure of above-mentioned various versions can also be made permutation and combination arbitrarily.
Because present embodiment is at the tail end place of part gate 102 or edge's design cutting-edge structure, to other unessential position (promptly avoiding the element whereabouts), so the present invention can avoid element to suffer the infringement of static discharge with guiding static.
Second embodiment
Seeing also shown in Figure 4ly, is according to looking schematic diagram on the ESD protection circuit of second embodiment of the invention, and among Fig. 4 by the profile of II-II ' also as shown in Figure 2.The ESD protection circuit of present embodiment is to be suitable for improving the static discharge phenomenon that is produced when the layout of ESD protection circuit strides across a distribution.In Fig. 4, with Fig. 1 components identical be to be labeled the same reference numeral.
Please consult Fig. 4, shown in Figure 2 simultaneously; the ESD protection circuit of present embodiment; be to electrically connect, and this ESD protection circuit is made of several thin-film transistors 101, one second distribution 406 (for example being data wiring) and at least one cutting- edge structure 404a or 404b with one first distribution 402 (for example being common lines).
Wherein, gate 102 and common lines 402 all are to belong to the first metal layer (M1), and common lines 402 can electrically connect with the gate 102 of thin-film transistor 101.And dielectric layer 104 is to cover on gate 102 and the common lines 402, and 106 of semiconductor layers are to cover on the dielectric layer 104.In addition, source/drain 108 is formed on the semiconductor layer 106, and 102 configurations of corresponding gate, and in a preferred embodiment, this source/drain 108 can be the layout of linearity.
In addition, data distribution 406 is to belong to second metal level with source/drain 108 equally, and it is that source/drain 108 with thin-film transistor 101 electrically connects, and data wiring 406 is to stride across common lines 402.Static discharged in the intersection of data wiring 406 and common lines 402 through regular meeting in the past; and cause data wiring 406 and common lines 402 short circuits; therefore near present embodiment design cutting- edge structure 404a, 404b data wiring 406 and common lines 402 intersections especially; with with electrostatic guide to cutting- edge structure 404a, 404a place, avoid static discharge to cause short circuit between data wiring 406 and the common lines 402.
And cutting- edge structure 404a, 404b, be configured in common lines 402 and data wiring 406 the intersection near, wherein cutting-edge structure 404a links together with data wiring 406, it is to utilize the cutting-edge structure that data wiring 406 is attenuated and form.In addition, cutting-edge structure 404b is the edge that is configured in common lines 402, and avoids data wiring 406 as much as possible.In the present embodiment, can also be only at the configuration cutting-edge structure 404b of edge of common lines 402, or only at data wiring 406 places design cutting-edge structure 404a.The shape same, that the shape of cutting- edge structure 404a, 404b does not limit in the drawings to be illustrated, the pattern form of the cutting-edge structure that similar Fig. 3 illustrated can be with herein.
Second embodiment of the invention is except design cutting- edge structure 404a, 404b near data wiring 406 and common lines 402 intersections, to avoid static to cause outside data wiring 406 and common lines 402 short circuits, present embodiment can also be in conjunction with the technology of first embodiment, promptly also at the tail end of part gate 102 structures or edge's design cutting-edge structure 110, with guiding static to avoiding element or circuit whereabouts.
The 3rd embodiment
Seeing also shown in Figure 5ly, is according to looking schematic diagram on the ESD protection circuit of third embodiment of the invention.The structure of the ESD protection circuit of present embodiment is to comprise several electric static discharge protectors 500 and at least one plan electric static discharge protector 502; Wherein, this plan electric static discharge protector 502 is to be arranged in electric static discharge protector 500 sides, and is positioned at outermost, in other words, intends wherein a side or both sides that electric static discharge protector 502 can be arranged in electric static discharge protector 500 regions.And these electric static discharge protectors 500 are to electrically connect with other component structure 504 (for example being driving element) by lead 508; same, intending electric static discharge protector 502 can also electrically connect through lead 508 and with plan component structure 506 (for example being to intend driving element).
Above-mentioned electric static discharge protector 500; it can be the design of traditional ESD protection circuit; or as the design of the described ESD protection circuit of first embodiment, or as the design of the described ESD protection circuit of second embodiment, or its combination.And the structure of intending electric static discharge protector 502 will be in following detailed description.
See also Fig. 6 and shown in Figure 7, Fig. 6 be Fig. 5 plan electric static discharge protector 502 on look schematic diagram, Fig. 7 is by the generalized section of III-III ' section among Fig. 6.Above-mentioned plan electric static discharge protector 502, it comprises several plan thin-film transistors 601, intends data wiring 606 and at least one cutting-edge structure 604a or 604b.Wherein, this each intend thin-film transistor 601, have one and intend gate 602 and and intend source/drain 608, and intending gate 602 and intending more comprising between the source/drain 608 and be formed with dielectric layer 104 and semiconductor layer 106.Particularly; the ESD protection circuit of present embodiment can electrically connect with common lines 402; therefore this common lines 402 can electrically connect with the plan gate 602 of intending thin-film transistor 601, also can electrically connect (not shown) with the gate of previous described ESD protection circuit 500.And in a preferred embodiment, source/drain 608 can be the layout of linearity.
In addition, intending data wiring 606 is to electrically connect with part source/drain 608, and plan data wiring 606 only extends near common lines 402 parts.In other words, intending data distribution 606 no longer continues to extend promptly interrupting near common lines 402 parts.Because static discharged in the intersection of two leads (for example being the intersection of data wiring and common lines) through regular meeting in the past; therefore present embodiment designs the plan data wiring 606 of intending electric static discharge protector especially and is promptly interrupting near common lines 402 parts; and,, static discharges so that being directed to this place at the contiguous design cutting-edge structure 604b of common lines 402 edges that intends data wiring 606.Certainly, can also optionally design another cutting-edge structure 604a, so that static produces discharge at two cutting-edge structure 604a, 604b whereabouts at the tail end place that intends data wiring 606.The shape same, that the shape of cutting-edge structure 604a, 604b does not limit in the drawings to be illustrated, the pattern form of the cutting-edge structure that similar Fig. 3 illustrated can be with herein.What is particularly worth mentioning is that, be not the element that truly is used for electrostatic discharge (ESD) protection owing to intend electric static discharge protector, therefore will intend data wiring and be designed to broken string, can't influence the electrostatic protective function of electric static discharge protector for element.
Third embodiment of the invention is designed to the kenel that breaks except the plan data wiring 606 that will intend electric static discharge protector; so that outside electrostatic energy discharges at this place; present embodiment can also be in conjunction with the technology of first embodiment; and at the tail end of partly intending gate 602 structures or edge's design cutting-edge structure 610, discharge at cutting-edge structure 610 whereabouts with the guiding electrostatic energy.
The 4th embodiment
The structure of the ESD protection circuit of fourth embodiment of the invention is similar to previous described the 3rd embodiment.Two embodiment are in a side of electric static discharge protector region or the both sides design has the plan electric static discharge protector.The 4th embodiment and the 3rd embodiment difference are slightly variant on the layout of intending electric static discharge protector, and the part of electric static discharge protector is then identical with the 3rd embodiment, therefore do not repeat them here.
See also Fig. 8 and shown in Figure 7, Fig. 8 is according to looking schematic diagram on the plan electric static discharge protector of fourth embodiment of the invention, and Fig. 7 is by the profile of III-III ' section among Fig. 8.The plan electric static discharge protector of present embodiment is made of several plan thin-film transistors 601, plan data wiring 806 and at least one cutting-edge structure 804a or 804b; Wherein:
Above-mentioned each is intended thin-film transistor 601, has one and intends a gate 602 and a plan source/drain 608, and intend also being formed with dielectric layer 104, semiconductor layer 106 between gate 602 and the plan source/drain 608.Same, common lines 402 can electrically connect with the plan gate of intending thin-film transistor 601.And in a preferred embodiment, source/drain 608 can be the layout of linearity.
In addition, above-mentioned plan data wiring 806 be to electrically connect with intending source/drain 608, and plan data wiring 806 is to stride across common lines 402.In addition, present embodiment especially intend data wiring 806 and common lines 402 intersections near design cutting-edge structure 804a, 804b, so that electrostatic guide is discharged to cutting-edge structure 804a, 804b.
Wherein, above-mentioned cutting-edge structure 804a be to link together with intending data wiring 806, and cutting-edge structure 804b links together with common lines 402, and avoids common lines 402 as much as possible.Same, present embodiment can also only dispose cutting-edge structure 804b in common lines 402 edges, or only at the edge designs cutting-edge structure 804a that intends data wiring 806.And the shape that the shape of cutting-edge structure 804a, 804b does not limit in the drawings to be illustrated, the pattern form of the cutting-edge structure that similar Fig. 3 illustrated can be with herein.
Same, present embodiment can also promptly also be intended tail end or edge's design cutting-edge structure 610 of gate 602 structures in conjunction with the technology of first embodiment in part, discharge with guiding static to cutting-edge structure 610 whereabouts.
What is particularly worth mentioning is that; the designed plan electric static discharge protector of present embodiment is almost the same with electric static discharge protector, therefore, damages or can't normal operation the time when electric static discharge protector has; will be possible to use and intend the discharge of electricity protection component and replace, and can improve the productivity ratio of product.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (17)
1, a kind of structure of ESD protection circuit is characterized in that it comprises:
The plurality of films transistor, each those thin-film transistor has a gate and one source pole/drain respectively; And
At least one cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
2, the structure of ESD protection circuit according to claim 1 is characterized in that wherein said those source/drain are the layouts for linearity.
3, the structure of ESD protection circuit according to claim 1, it is characterized in that wherein said those cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
4, the structure of ESD protection circuit according to claim 1 is characterized in that wherein said those cutting-edge structures are the structures that attenuate for acuter angles or gate tail end.
5, a kind of structure of ESD protection circuit is suitable for improving the static discharge phenomenon that is produced when the layout of this ESD protection circuit strides across one first distribution, it is characterized in that the structure of this ESD protection circuit comprises:
The plurality of films transistor, each those thin-film transistor has a gate and one source pole/drain respectively;
One second distribution, it is that this source/drain with those thin-film transistors electrically connects, and this second distribution is to stride across this first distribution; And
At least one cutting-edge structure, be configured in this first distribution and the second distribution intersection near, and this cutting-edge structure be connected with this first distribution and this second distribution one of them links together at least.
6, the structure of ESD protection circuit according to claim 5 is characterized in that it more comprises at least one first cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
7, the structure of ESD protection circuit according to claim 6, it is characterized in that wherein said those first cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
8, the structure of ESD protection circuit according to claim 5 is characterized in that wherein said those source/drain are the layouts for linearity.
9, a kind of structure of ESD protection circuit, this ESD protection circuit are to electrically connect with one first distribution, it is characterized in that the structure of this ESD protection circuit comprises:
A plurality of electric static discharge protectors;
At least one plan electric static discharge protector, this plan electric static discharge protector is to be arranged in by those electric static discharge protectors, and is positioned at outermost, this plan electric static discharge protector comprises:
A plurality of plan thin-film transistors, each those plan thin-film transistor have one respectively and intend a gate and a plan source/drain;
One intends second distribution, and it is that those these plan source/drain of intending thin-film transistor electrically connect, and this plan second distribution only extends near this first distribution part; And
At least one cutting-edge structure, it is to be configured in contiguous those to intend this first distribution edge of the second distribution tail end.
10, the structure of ESD protection circuit according to claim 9 is characterized in that it more comprises at least one first cutting-edge structure, is configured in the tail end place that this intends second distribution.
11, the structure of ESD protection circuit according to claim 9 is characterized in that it more comprises at least one second cutting-edge structure, be configured in part those intend the tail end place of gates and edge at least one of them.
12, the structure of ESD protection circuit according to claim 9 is characterized in that wherein said those plan source/drain are the layouts for linearity.
13, a kind of structure of ESD protection circuit, this ESD protection circuit are to electrically connect with one first distribution, it is characterized in that the structure of this ESD protection circuit comprises:
A plurality of electric static discharge protectors;
At least one plan electric static discharge protector, this plan electric static discharge protector is to be arranged in by those electric static discharge protectors, and is positioned at outermost, this plan electric static discharge protector comprises:
A plurality of plan thin-film transistors, each those plan thin-film transistor have one respectively and intend a gate and a plan source/drain;
One intends second distribution, and it is that those these plan source/drain of intending thin-film transistor electrically connect, and this plan second distribution is to stride across this first distribution; And
At least one cutting-edge structure, be configured in this first distribution and this plan second distribution intersection near, and this cutting-edge structure is that one of them links together at least with this first distribution and this plan second distribution.
14, the structure of ESD protection circuit according to claim 13 is characterized in that wherein those cutting-edge structures of part are to link together with this first distribution, and another those cutting-edge structures partly are to intend second distribution with this to link together.
15, the structure of ESD protection circuit according to claim 13 is characterized in that it more comprises at least one first cutting-edge structure, be configured in part tail end place of those gates and edge at least one of them.
16, the structure of ESD protection circuit according to claim 15, it is characterized in that wherein said those first cutting-edge structures be positioned at the tail end place of those gates of avoiding those source/drain and edge at least one of them.
17, the structure of ESD protection circuit according to claim 13 is characterized in that wherein said those plan source/drain are the layouts for linearity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031532527A CN1324703C (en) | 2003-08-11 | 2003-08-11 | Static discharge protective circuit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031532527A CN1324703C (en) | 2003-08-11 | 2003-08-11 | Static discharge protective circuit structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1581480A true CN1581480A (en) | 2005-02-16 |
| CN1324703C CN1324703C (en) | 2007-07-04 |
Family
ID=34579984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031532527A Expired - Fee Related CN1324703C (en) | 2003-08-11 | 2003-08-11 | Static discharge protective circuit structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1324703C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101762781B (en) * | 2010-01-08 | 2012-05-09 | 西安西电科大射频集成电路有限责任公司 | Test circuit for predicting static discharge failure of integrated circuit and prediction method thereof |
| US8184105B2 (en) | 2009-09-07 | 2012-05-22 | Au Optronics Corporation | Touch panel |
| CN103441130A (en) * | 2013-08-29 | 2013-12-11 | 京东方科技集团股份有限公司 | Substrate with static electricity self-protection capability and manufacturing method thereof |
| CN104300009A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method of thin film transistor, circuit structure and electronic equipment |
| CN105487317A (en) * | 2016-01-25 | 2016-04-13 | 京东方科技集团股份有限公司 | Substrate and display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9416899D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin-film circuitry |
| TW371371B (en) * | 1998-04-10 | 1999-10-01 | United Microelectronics Corp | Electrostatic discharge protection circuit with tip discharge |
-
2003
- 2003-08-11 CN CNB031532527A patent/CN1324703C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8184105B2 (en) | 2009-09-07 | 2012-05-22 | Au Optronics Corporation | Touch panel |
| CN101762781B (en) * | 2010-01-08 | 2012-05-09 | 西安西电科大射频集成电路有限责任公司 | Test circuit for predicting static discharge failure of integrated circuit and prediction method thereof |
| CN103441130A (en) * | 2013-08-29 | 2013-12-11 | 京东方科技集团股份有限公司 | Substrate with static electricity self-protection capability and manufacturing method thereof |
| WO2015027578A1 (en) * | 2013-08-29 | 2015-03-05 | 京东方科技集团股份有限公司 | Substrate having electrostatic self-protection capability and manufacturing method therefor |
| CN103441130B (en) * | 2013-08-29 | 2015-08-12 | 京东方科技集团股份有限公司 | There is substrate and the manufacture method thereof of static electricity self-protection capability |
| CN104300009A (en) * | 2014-10-31 | 2015-01-21 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method of thin film transistor, circuit structure and electronic equipment |
| CN104300009B (en) * | 2014-10-31 | 2017-02-15 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method of thin film transistor, circuit structure and electronic equipment |
| CN105487317A (en) * | 2016-01-25 | 2016-04-13 | 京东方科技集团股份有限公司 | Substrate and display device |
| WO2017128738A1 (en) * | 2016-01-25 | 2017-08-03 | Boe Technology Group Co., Ltd. | Substrate and display device containing the same |
| CN105487317B (en) * | 2016-01-25 | 2019-04-02 | 京东方科技集团股份有限公司 | A kind of substrate and display device |
| US10546851B2 (en) | 2016-01-25 | 2020-01-28 | Boe Technology Group Co., Ltd | Substrate and display device containing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1324703C (en) | 2007-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1087103C (en) | Semiconductor device | |
| CN1184607C (en) | Liquid crystal display and method for mfg. same | |
| US7763941B2 (en) | Integrated circuit device having input/output electrostatic discharge protection cell equipped with electrostatic discharge protection element and power clamp | |
| CN105093751B (en) | Prevent the GOA layout designs of ESD | |
| CN1162818C (en) | Indicator | |
| US10320186B2 (en) | Display drive chip | |
| US7808046B2 (en) | Electrostatic protection device for semiconductor circuit | |
| CN1743926A (en) | Electro-optical device and electronic apparatus | |
| CN1847940A (en) | Method for forming pad electrode, method for manufacturing liquid crystal display device | |
| CN1527268A (en) | Planar display with data line capable of being repaired and its repair method | |
| CN1928681A (en) | Thin-film transistor array substrate, its electric static discharge protector and method for making same | |
| CN1967824A (en) | Drive element mount display | |
| CN106783845A (en) | Array base palte and the liquid crystal panel with the array base palte | |
| KR20160143967A (en) | Display device and fabrication method thereof | |
| CN1311543C (en) | Semiconductor device | |
| CN102640203A (en) | Active matrix substrate and display device | |
| CN108665850A (en) | Drive substrate and display panel | |
| CN1324703C (en) | Static discharge protective circuit structure | |
| CN1862324A (en) | Thin film transistor, fabrication method thereof, liquid crystal display panel device having the same, and fabrication method thereof | |
| CN103376607B (en) | Liquid crystal display and manufacture method thereof | |
| CN1645615A (en) | Semiconductor device | |
| US20050023614A1 (en) | Electrostatic discharge protection circuit | |
| CN1691321A (en) | Semiconductor integrated circuit, method of forming the same, and method of adjusting circuit parameter thereof | |
| CN1473362A (en) | Semiconductor apparatus with improved esd withstanding voltage | |
| CN1176490A (en) | Semiconductor integrated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070704 Termination date: 20210811 |